Si/Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405748, 405750)
Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience.
EXCEPTION 4: Layered material, no automatic featurization possible!
-

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405759, 405759)
Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405815, 405815)
 Multijunction solar cells in a tandem configuration could further lower thecosts of electricity if crystalline Si (c<missing VAR>-Si) is used as bottom cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405820, 405820)
 Multijunction solar cells in a tandem configuration could further lower thecosts of electricity if crystalline Si (c<missing VAR>-Si) is used as bottom cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405850, 405850)
 However,for direct monolithic integration on c<missing VAR>-Si, only a restricted number of top andbottom cell architectures are compatible, due to either epitaxy or hightemperature constraints, where the interface between subcells is subject to atrade-off between transmittance, electrical interconnection, and bottom celldegradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Si/Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405943, 405945)
 Using polySi/SiOx passivating contacts for Si, this degradationcan be largely circumvented by tuning the polySi/SiOx stacks to promotegettering of contaminants admitted into the Si bottom cell during the top cellsynthesis.
EXCEPTION 4: Layered material, no automatic featurization possible!
-

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405954, 405954)
 Using polySi/SiOx passivating contacts for Si, this degradationcan be largely circumvented by tuning the polySi/SiOx stacks to promotegettering of contaminants admitted into the Si bottom cell during the top cellsynthesis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Si/Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405977, 405979)
 Using polySi/SiOx passivating contacts for Si, this degradationcan be largely circumvented by tuning the polySi/SiOx stacks to promotegettering of contaminants admitted into the Si bottom cell during the top cellsynthesis.
EXCEPTION 4: Layered material, no automatic featurization possible!
-

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406001, 406001)
 Using polySi/SiOx passivating contacts for Si, this degradationcan be largely circumvented by tuning the polySi/SiOx stacks to promotegettering of contaminants admitted into the Si bottom cell during the top cellsynthesis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Cu2ZnSnS4
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406040, 406045)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406048, 406048)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

S
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406051, 406051)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

CuGaSe2
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406055, 406058)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406061, 406061)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Se
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406063, 406063)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

AgInGaSe2
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406068, 406072)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

I
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406076, 406076)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Se
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406078, 406078)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

S
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406089, 406089)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Se
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406093, 406093)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406102, 406102)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406121, 406121)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406144, 406144)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

In
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406184, 406184)
 In all cases, theincreased resilience was correlated with a 99.9% reduction in contaminantconcentration in the c<missing VAR>-Si bulk, provided by the thick polySi layer, which actsas a buried gettering layer in the tandem structure without compromising the Sipassivation quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406224, 406224)
 In all cases, theincreased resilience was correlated with a 99.9% reduction in contaminantconcentration in the c<missing VAR>-Si bulk, provided by the thick polySi layer, which actsas a buried gettering layer in the tandem structure without compromising the Sipassivation quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406238, 406238)
 In all cases, theincreased resilience was correlated with a 99.9% reduction in contaminantconcentration in the c<missing VAR>-Si bulk, provided by the thick polySi layer, which actsas a buried gettering layer in the tandem structure without compromising the Sipassivation quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406272, 406272)
 In all cases, theincreased resilience was correlated with a 99.9% reduction in contaminantconcentration in the c<missing VAR>-Si bulk, provided by the thick polySi layer, which actsas a buried gettering layer in the tandem structure without compromising the Sipassivation quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406282, 406282)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

I
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406291, 406291)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Se
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406293, 406293)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406297, 406297)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Se
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406299, 406299)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406303, 406303)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

S
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406306, 406306)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

Cu
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406320, 406320)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406357, 406357)
 An efficiency of up to 7% was achieved for a CZTS/Si tandem,where the Si bottom cell is no longer the limiting factor.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

S/Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406360, 406362)
 An efficiency of up to 7% was achieved for a CZTS/Si tandem,where the Si bottom cell is no longer the limiting factor.
EXCEPTION 4: Layered material, no automatic featurization possible!
-

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406372, 406372)
 An efficiency of up to 7% was achieved for a CZTS/Si tandem,where the Si bottom cell is no longer the limiting factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

