Double-absorber thin-film solar cell with 34% efficiency|Faiz Ahamd,Akhlesh Lakhtakia,Peter B. Monk|SSe|34|%|0.11044973544973545|With a 300-nm-thick CIG<missing VAR>Sabsorber layer and an870-nm-thick CZTSSeabsorber layer, an efficiency of 34.45% is predicted bya detailed optoelectronic model, provided that the grading of bandgap energy isoptimal in both absorber layers.|Double-absorber thin-film solar cell with 34% efficiency.|0
Double-absorber thin-film solar cell with 34% efficiency|Faiz Ahamd,Akhlesh Lakhtakia,Peter B. Monk|SSe|34.45|%|1.0|With a 300-nm-thick CIG<missing VAR>Sabsorber layer and an870-nm-thick CZTSSeabsorber layer, an efficiency of 34.45% is predicted bya detailed optoelectronic model, provided that the grading of bandgap energy isoptimal in both absorber layers.|With a 300-nm-thick CIG<missing VAR>Sabsorber layer and an870-nm-thick CZTSSeabsorber layer, an efficiency of 34.45% is predicted bya detailed optoelectronic model, provided that the grading of bandgap energy isoptimal in both absorber layers.|0
High performance solar cells based on graphene-GaAs heterostructures|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Huikai Zhong,Zhiqian Wu,Hongshen Chen,Cheng Liu,Shisheng Lin|GaAs|10.4|%|0.5|Herein, we reportgraphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5%without and with anti-reflection layer on graphene, respectively.|Herein, we reportgraphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5%without and with anti-reflection layer on graphene, respectively.|1
High performance solar cells based on graphene-GaAs heterostructures|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Huikai Zhong,Zhiqian Wu,Hongshen Chen,Cheng Liu,Shisheng Lin|GaAs|15.5|%|0.5|Herein, we reportgraphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5%without and with anti-reflection layer on graphene, respectively.|Herein, we reportgraphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5%without and with anti-reflection layer on graphene, respectively.|1
High performance solar cells based on graphene-GaAs heterostructures|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Huikai Zhong,Zhiqian Wu,Hongshen Chen,Cheng Liu,Shisheng Lin|GaAs|15.5|%|0.10648148148148148|Herein, we reportgraphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5%without and with anti-reflection layer on graphene, respectively.|The Eta of15.5% is higher than the state of art efficiency for graphene/Si system(14.5%).|0
High performance solar cells based on graphene-GaAs heterostructures|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Huikai Zhong,Zhiqian Wu,Hongshen Chen,Cheng Liu,Shisheng Lin|GaAs|14.5|%|0.018072289156626505|Herein, we reportgraphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5%without and with anti-reflection layer on graphene, respectively.|The Eta of15.5% is higher than the state of art efficiency for graphene/Si system(14.5%).|0
Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov|CdS/CI|17.3|%|0.375|Westart with the numerical simulation of single-junction CdS/CIG<missing VAR>S solar cells,which shows that its highest efficiency of 17.3% could be achieved by thethickness of CIG<missing VAR>S p<missing VAR>-layer of 200 nm.|Westart with the numerical simulation of single-junction CdS/CIG<missing VAR>S solar cells,which shows that its highest efficiency of 17.3% could be achieved by thethickness of CIG<missing VAR>S p<missing VAR>-layer of 200 nm.|0
Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov|CdS/CI|17.1|%|0.11918604651162791|Westart with the numerical simulation of single-junction CdS/CIG<missing VAR>S solar cells,which shows that its highest efficiency of 17.3% could be achieved by thethickness of CIG<missing VAR>S p<missing VAR>-layer of 200 nm.|This result is in a good agreement withexperimental data where the highest efficiency was 17.1% with the solar cellthickness of 1 micron.|0
Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov|CdS/CI|48.3|%|0.017713365539452495|Westart with the numerical simulation of single-junction CdS/CIG<missing VAR>S solar cells,which shows that its highest efficiency of 17.3% could be achieved by thethickness of CIG<missing VAR>S p<missing VAR>-layer of 200 nm.|Numericalsimulation shows that the maximum efficiency of this solar cell is equal to48.3%, which could be obtained with the thickness of the CIG<missing VAR>S p<missing VAR>-layer of 600 nmat a standard illumination of AM<missing VAR> 1.5.|0
Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim|CdS|45.65|%|0.14285714285714285|This article renders the optimized PVparameters to improve the device performance with the highest power conversionefficiency (PCE) of 45.65% with a high open-circuit voltage of 1.16 V owing tothe high built-in voltage of 1.7 V for the n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 solar cells.|This article renders the optimized PVparameters to improve the device performance with the highest power conversionefficiency (PCE) of 45.65% with a high open-circuit voltage of 1.16 V owing tothe high built-in voltage of 1.7 V for the n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 solar cells.|0
Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells|Andrea Cordaro,Ralph Müller,Stefan Tabernig,Nico Tucher,Patrick Schygulla,Oliver Höhn,Benedikt Bläsi,Albert Polman|GaInP/GaInAsP|0.9|%|0.25396825396825395|Nanopatternedmetagrating back-reflectors are fabricated on GaInP/GaInAsP//Si two-terminaltriple-junction solar cells via Substrate Conformal Imprint Lithography (SCIL)and characterized optically and electronically, demonstrating a powerconversion efficiency improvement of +0.9%abs over the planar reference.|Nanopatternedmetagrating back-reflectors are fabricated on GaInP/GaInAsP//Si two-terminaltriple-junction solar cells via Substrate Conformal Imprint Lithography (SCIL)and characterized optically and electronically, demonstrating a powerconversion efficiency improvement of +0.9%abs over the planar reference.|0
Optimizations of GaAs Nanowire Solar Cells|Anna H. Trojnar,Christopher E. Valdivia,Ray R. LaPierre,Karin Hinzer,Jacob J. Krich|GaAs|19|%|0.0025167785234899327|The efficiency of GaAs nanowire solar cells can be significantly improvedwithout any new processing steps or material requirements.|These twoeasily implemented changes, coupled with the increase of NW height to 3.5 umwith realistic surface recombination in the presence of a passivation shell,result in a NW solar cell with greater than 19% efficiency.|0
Numerical simulation of InGaN Schottky solar cell|Sidi Ould Saad Hamady,Adaine Abdoulwahab,Nicolas Fressengeas|InGaN|18.2|%|0.5|A 18.2% efficiency is predicted for this new InGaN solarcell design.|A 18.2% efficiency is predicted for this new InGaN solarcell design.|0
Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng|SSe|12.2|%|0.5|These factors have contributed to achievingCZTSSe solar cells with efficiency of as high as 12.2% (a certified efficiencyof 12.0%) and providing an extremely wide time window for precursor storage andusage.|These factors have contributed to achievingCZTSSe solar cells with efficiency of as high as 12.2% (a certified efficiencyof 12.0%) and providing an extremely wide time window for precursor storage andusage.|0
Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng|SSe|12.0|%|0.5|These factors have contributed to achievingCZTSSe solar cells with efficiency of as high as 12.2% (a certified efficiencyof 12.0%) and providing an extremely wide time window for precursor storage andusage.|These factors have contributed to achievingCZTSSe solar cells with efficiency of as high as 12.2% (a certified efficiencyof 12.0%) and providing an extremely wide time window for precursor storage andusage.|0
Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali|SiH|19.62|%|0.013294422827496755|In this paper we carried out theoretical study of the general issues relatedto the efficiency of SiCH/a-SiH single- and multi-junction tandem solarcells.|It has been established that afteroptimizing the solar cell parameters its highest efficiency of 19.62% isachieved at 500 nm thickness of i<missing VAR>-layer.|0
Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali|SiH|22.6|%|0.010495626822157435|In this paper we carried out theoretical study of the general issues relatedto the efficiency of SiCH/a-SiH single- and multi-junction tandem solarcells.|It has been shown numerically that its highest efficiency of 22.6%is achieved at the thickness of 270 nm of intermediate i<missing VAR>-layer.|0
CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su|GeSe|100|%|0.5|We studied the semiconducting layerssuch as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is thebest, where the optical absorption efficiency in the perovskite/GeSe solar cellis dramatically increased.|It turns out that the short circuit current densityis enhanced 100% and the power conversion efficiency is promoted 42.7% (to ahigh value of 23.77%) larger than that in a solar cell with only singleperovskite layer.|1
CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su|GeSe|42.7|%|0.5|We studied the semiconducting layerssuch as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is thebest, where the optical absorption efficiency in the perovskite/GeSe solar cellis dramatically increased.|It turns out that the short circuit current densityis enhanced 100% and the power conversion efficiency is promoted 42.7% (to ahigh value of 23.77%) larger than that in a solar cell with only singleperovskite layer.|1
CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su|GeSe|23.77|%|0.5|We studied the semiconducting layerssuch as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is thebest, where the optical absorption efficiency in the perovskite/GeSe solar cellis dramatically increased.|It turns out that the short circuit current densityis enhanced 100% and the power conversion efficiency is promoted 42.7% (to ahigh value of 23.77%) larger than that in a solar cell with only singleperovskite layer.|0
Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu|SiH/ZnOAl|18.46|%|0.23076923076923078|An efficiency up to 18.46% was achievedon a SHJ<missing VAR> solar cell with an a-SiH/ZnOAl double layer back structure.|An efficiency up to 18.46% was achievedon a SHJ<missing VAR> solar cell with an a-SiH/ZnOAl double layer back structure.|0
Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu|ZnO/ZnOAl|17.13|%|0.22093023255813954|And, theall solution-processed non-doped ZnO/ZnOAl combination layer presents fairlygood electron selective transportation property for SHJ<missing VAR> solar cell, resultingin an efficiency of 17.13%.|And, theall solution-processed non-doped ZnO/ZnOAl combination layer presents fairlygood electron selective transportation property for SHJ<missing VAR> solar cell, resultingin an efficiency of 17.13%.|0
III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti|GaInP/GaAs|47|%|0.015909090909090907|From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.|Here, we perform detailedbalance efficiency limit calculations under one-sun illumination that show thatthe absolute efficiency limit of a III-V-HBT<missing VAR>SC-on-Si device is the same as forthe conventional current-matched III-V-on-Si triple-junction (47% assumingblack-body spectrum, 49% with AM1.5G).|1
III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti|GaInP/GaAs|49|%|0.05154639175257732|From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.|Here, we perform detailedbalance efficiency limit calculations under one-sun illumination that show thatthe absolute efficiency limit of a III-V-HBT<missing VAR>SC-on-Si device is the same as forthe conventional current-matched III-V-on-Si triple-junction (47% assumingblack-body spectrum, 49% with AM1.5G).|1
III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti|GaInP/GaAs|40|%|0.12727272727272726|From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.|However, the range of band-gap energiesfor which the efficiency limit is above 40% is much wider in theIII-V-HBT<missing VAR>SC-on-Si stack case.|0
III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti|GaInP/GaAs|47|%|0.2413793103448276|From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.|From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.|1
III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti|GaInP/GaAs|39|%|0.12|From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.|From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.|1
III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti|GaInP/GaAs|43|%|0.15384615384615385|As a result, the GaInP/GaAs-HBT<missing VAR>SC-on-Si solar cell becomes apromising device for two-terminal, high-efficiency one-sun operation.|Moreover, we showthat interconnecting the terminals of the HBT<missing VAR>SC to achieve a two-terminalGaInP/GaAs-HBT<missing VAR>SC-on-Si device only reduces the efficiency limit by threepoints, to 43%.|0
Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov|CdTe|18.3|%|0.5|Numerical simulationshows that the highest efficiency of single-junction CdS/CdTe solar cell equalto 18.3% is achieved when the CdTe layer thickness is 1000 nm and a CdS layeris 60 nm.|Numerical simulationshows that the highest efficiency of single-junction CdS/CdTe solar cell equalto 18.3% is achieved when the CdTe layer thickness is 1000 nm and a CdS layeris 60 nm.|0
Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov|CdS|31.8|%|1.0|Numericalsimulations show that its highest efficiency in 31.8% can be obtained when thethickness of CdS p<missing VAR>-layer is equal to 50 nm, and the thickness of the CdSn<missing VAR>-layer is equal to 200 nm, while thicknesses of the CdTe n<missing VAR>-layer and CdTep<missing VAR>-layer are kept fixed and equal to 3000 nm and 1000 nm, respectively.|Numericalsimulations show that its highest efficiency in 31.8% can be obtained when thethickness of CdS p<missing VAR>-layer is equal to 50 nm, and the thickness of the CdSn<missing VAR>-layer is equal to 200 nm, while thicknesses of the CdTe n<missing VAR>-layer and CdTep<missing VAR>-layer are kept fixed and equal to 3000 nm and 1000 nm, respectively.|0
Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey|TiO2|19.99|%|0.08974358974358974|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|1
Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey|TiO2|21.55|%|0.3142857142857143|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|1
Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey|TiO2|21.59|%|0.4838709677419355|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|1
Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey|TiO2|17.47|%|0.35185185185185186|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|1
Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey|TiO2|20.42|%|0.7391304347826086|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|1
Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey|TiO2|21.52|%|0.6842105263157895|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|1
Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey|TiO2|14.44|%|0.3|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|1
Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey|TiO2|21.43|%|0.45454545454545453|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.|1
The Efficiency Limit of CH3NH3PbI3 Perovskite Solar Cells|Wei E. I. Sha,Xingang Ren,Luzhou Chen,Wallace C. H. Choy|(GaAs)|31|%|1.0|The efficiency limit ofperovskite cells (without the angular restriction) is about 31%, whichapproaches to Shockley-Queisser limit (33%) achievable by gallium arsenide(GaAs) cells.|The efficiency limit ofperovskite cells (without the angular restriction) is about 31%, whichapproaches to Shockley-Queisser limit (33%) achievable by gallium arsenide(GaAs) cells.|1
The Efficiency Limit of CH3NH3PbI3 Perovskite Solar Cells|Wei E. I. Sha,Xingang Ren,Luzhou Chen,Wallace C. H. Choy|(GaAs)|33|%|1.0|The efficiency limit ofperovskite cells (without the angular restriction) is about 31%, whichapproaches to Shockley-Queisser limit (33%) achievable by gallium arsenide(GaAs) cells.|The efficiency limit ofperovskite cells (without the angular restriction) is about 31%, whichapproaches to Shockley-Queisser limit (33%) achievable by gallium arsenide(GaAs) cells.|1
A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng|SSe|14.1|%|0.5|This strategy enables the phase evolution to start at relatively highertemperature and thereby leading to high crystalline quality CZTSSe absorberwith fewer defects, and corresponding CZTSSe solar cell can present 14.1%efficiency (total area), which is the highest result so far.|This strategy enables the phase evolution to start at relatively highertemperature and thereby leading to high crystalline quality CZTSSe absorberwith fewer defects, and corresponding CZTSSe solar cell can present 14.1%efficiency (total area), which is the highest result so far.|0
Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di|GaAs|49|%|0.7777777777777778|Here, we propose that the fundamental efficiencylimits for single-junction solar cells may be surpassed via photon confinement,substantially raising the theoretical limits to 49%, 45.2% and 42.1% for Si,GaAs and methylammonium lead iodide (M<missing VAR>APbI3) perovskite cells under 1-sun.|Here, we propose that the fundamental efficiencylimits for single-junction solar cells may be surpassed via photon confinement,substantially raising the theoretical limits to 49%, 45.2% and 42.1% for Si,GaAs and methylammonium lead iodide (M<missing VAR>APbI3) perovskite cells under 1-sun.|1
Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di|GaAs|45.2|%|0.7142857142857143|Here, we propose that the fundamental efficiencylimits for single-junction solar cells may be surpassed via photon confinement,substantially raising the theoretical limits to 49%, 45.2% and 42.1% for Si,GaAs and methylammonium lead iodide (M<missing VAR>APbI3) perovskite cells under 1-sun.|Here, we propose that the fundamental efficiencylimits for single-junction solar cells may be surpassed via photon confinement,substantially raising the theoretical limits to 49%, 45.2% and 42.1% for Si,GaAs and methylammonium lead iodide (M<missing VAR>APbI3) perovskite cells under 1-sun.|1
Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di|GaAs|42.1|%|0.5555555555555556|Here, we propose that the fundamental efficiencylimits for single-junction solar cells may be surpassed via photon confinement,substantially raising the theoretical limits to 49%, 45.2% and 42.1% for Si,GaAs and methylammonium lead iodide (M<missing VAR>APbI3) perovskite cells under 1-sun.|Here, we propose that the fundamental efficiencylimits for single-junction solar cells may be surpassed via photon confinement,substantially raising the theoretical limits to 49%, 45.2% and 42.1% for Si,GaAs and methylammonium lead iodide (M<missing VAR>APbI3) perovskite cells under 1-sun.|1
IBIC analysis of CdTe/CdS solar cells|E. Colombo,A. Bosio,S. Calusi,L. Giuntini,A. Lo Giudice,C. Manfredotti,M. Massi,P. Olivero,A. Romeo,N. Romeo,E. Vittone|CdTe|14|%|0.01985981308411215|The charge collection efficiency (CCE) maps show inhomogeneousresponse of the cell to be attributed to the polycrystalline nature of the CdTebulk material.|The device under test is a thin film (total thickness around 10 um)multilayer heterojunction solar cell, displaying an efficiency of 14% underAM<missing VAR>1.5 illumination conditions.|0
Large diameter TiO$_2$ nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency|Abdelhamid Elzarka,Ning Liu,Imgon Hwang,Mustafa Kamal,Patrik Schmuki|TiO2|5|%|0.0061666666666666675|Large diameter TiO2 nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency.|In such a D<missing VAR>SSC structure,the solar cell efficiency under back side illumination with AM<missing VAR>1.5 illuminationis enhanced from 5% neat tube to 7 %.|0
Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer|Ga1-xSe2|19.9|%|0.4189189189189189|Thin-film solar cells with CuInx<missing VAR>Ga1-xSe2 (CIG<missing VAR>S) absorber are stillfar below their efficiency limit, although lab cells reach already 19.9%.|Thin-film solar cells with CuInx<missing VAR>Ga1-xSe2 (CIG<missing VAR>S) absorber are stillfar below their efficiency limit, although lab cells reach already 19.9%.|0
Semiconductor quantum dots enhanced graphene/CdTe heterostructure solar cells by photo-induced doping|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Zhijuan Xu,Huikai Zhong,Zhiqian Wu,Shisheng Lin|CdTe|2.08|%|0.5|By coating a layer of ultrathin CdSe quantum dots ontographene/CdTe heterostructure, the power conversion efficiency is increasedfrom 2.08% to 3.1%.|By coating a layer of ultrathin CdSe quantum dots ontographene/CdTe heterostructure, the power conversion efficiency is increasedfrom 2.08% to 3.1%.|0
Semiconductor quantum dots enhanced graphene/CdTe heterostructure solar cells by photo-induced doping|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Zhijuan Xu,Huikai Zhong,Zhiqian Wu,Shisheng Lin|CdTe|3.1|%|0.5|By coating a layer of ultrathin CdSe quantum dots ontographene/CdTe heterostructure, the power conversion efficiency is increasedfrom 2.08% to 3.1%.|By coating a layer of ultrathin CdSe quantum dots ontographene/CdTe heterostructure, the power conversion efficiency is increasedfrom 2.08% to 3.1%.|0
Resonant Silicon Nanoparticles for Enhanced Light Harvesting in Halide Perovskite Solar Cells|A. D. Furasova,E. Calabró,E. Lamanna,E. Y. Tiguntseva,E. Ushakova,E. V. Ubyivovk,V. Y. Mikhailovskii,A. A. Zakhidov,S. V. Makarov,A. Di Carlo|CH3NH3PbI3|18.8|%|0.47619047619047616|This results in a boost of the device efficiency upto 18.8% and fill factor up to 79%, being a record among the previouslyreported values on nanoparticles incorporation into CH3NH3PbI3 (M<missing VAR>APbI3)perovskites based solar cells.|This results in a boost of the device efficiency upto 18.8% and fill factor up to 79%, being a record among the previouslyreported values on nanoparticles incorporation into CH3NH3PbI3 (M<missing VAR>APbI3)perovskites based solar cells.|1
Resonant Silicon Nanoparticles for Enhanced Light Harvesting in Halide Perovskite Solar Cells|A. D. Furasova,E. Calabró,E. Lamanna,E. Y. Tiguntseva,E. Ushakova,E. V. Ubyivovk,V. Y. Mikhailovskii,A. A. Zakhidov,S. V. Makarov,A. Di Carlo|CH3NH3PbI3|79|%|1.0|This results in a boost of the device efficiency upto 18.8% and fill factor up to 79%, being a record among the previouslyreported values on nanoparticles incorporation into CH3NH3PbI3 (M<missing VAR>APbI3)perovskites based solar cells.|This results in a boost of the device efficiency upto 18.8% and fill factor up to 79%, being a record among the previouslyreported values on nanoparticles incorporation into CH3NH3PbI3 (M<missing VAR>APbI3)perovskites based solar cells.|1
InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas|(InGaN)|19.8|%|0.015086206896551725|Owing to its goodtolerance to radiations [1], its high light absorption [2, 3] and itsIndium-composition-tuned bandgap [4, 5], the Indium Gallium Nitride (InGaN)ternary alloy is a good candidate for high-efficiency-high-reliability solarcells able to operate in harsh environments.|With a simulated efficiency of 19.8%, the M<missing VAR>IN structure performsbetter than the previously studied Schottky structure, while increasing itsfabrication tolerance and thus functional reliability a.|0
Very high efficiency of low cost graphite-based solar cell by improving the fill factor using optimal ion concentration in polymer electrolyte|Dui Yanto Rahman,Fisca Dian Utami,Asep Ridwan Setiawan,Euis Sustini,Mikrajuddin Abdullah|LiOH|6.97|%|0.00951867816091954|We also propose an equation to describe the effect of LiOHconcentration and efficiency and we also provide strong correlation between thecell efficiency and the polymer conductivity<missing PERIOD>|Surprisingly, using mineral waters greatly improved theefficiency of the solar cell to reach the highest efficiency of 6.97%.|0
Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle|GaInAs|8|%|0.1|Thetheoretical analysis performed using realistic device parameters indicates thatthe GaInAs middle cell can be drastically thinned to 1000 nm while increasingits In content to 8% with an efficiency loss in the 3-junction cell below 3%.|Thetheoretical analysis performed using realistic device parameters indicates thatthe GaInAs middle cell can be drastically thinned to 1000 nm while increasingits In content to 8% with an efficiency loss in the 3-junction cell below 3%.Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle|GaInAs|3|%|0.27358490566037735|Thetheoretical analysis performed using realistic device parameters indicates thatthe GaInAs middle cell can be drastically thinned to 1000 nm while increasingits In content to 8% with an efficiency loss in the 3-junction cell below 3%.|Thetheoretical analysis performed using realistic device parameters indicates thatthe GaInAs middle cell can be drastically thinned to 1000 nm while increasingits In content to 8% with an efficiency loss in the 3-junction cell below 3%.Fabrication of single-walled carbon nanotube/Si heterojunction solar cell with high photovoltaic conversion efficiency and stability|Feijiu Wang,Daichi Kozawa,Yuhei Miyauchi,Kazushi Hiraoka,Shinichiro Mouri,Yutaka Ohno,Kazunari Matsuda|SWN|12|%|0.5|Because of the optimization of the device window size and theutilization of SWNT<missing VAR> thin films with both low resistivity and high transparency,a high photovoltaic conversion efficiency of greater than 12% was achieved forSWNTs/Si heterojunction solar cells without any post processing, such ascarrier doping treatment.|Because of the optimization of the device window size and theutilization of SWNT<missing VAR> thin films with both low resistivity and high transparency,a high photovoltaic conversion efficiency of greater than 12% was achieved forSWNTs/Si heterojunction solar cells without any post processing, such ascarrier doping treatment.|0
Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film|Yuka Tsuboi,Feijiu Wang,Daichi Kozawa,Kazuma Funahashi,Shinichiro Mouri,Yuhei Miyauchi,Taishi Takenobu,Kazunari Matsuda|MoS2|11.1|%|0.5|A high photovoltaic conversionefficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n<missing VAR>-Sisolar cell.|A high photovoltaic conversionefficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n<missing VAR>-Sisolar cell.|0
New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii|GaAs|27|%|1.0|We found that themaximum photoconversion efficiency (about 27% for AM<missing VAR>1.5 conditions) in GaAswith typical parameters of recombination centers can be reached for p<missing VAR>-type basedoped at 2 cdot 1017 cm-3.|We found that themaximum photoconversion efficiency (about 27% for AM<missing VAR>1.5 conditions) in GaAswith typical parameters of recombination centers can be reached for p<missing VAR>-type basedoped at 2 cdot 1017 cm-3.|0
New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii|GaAs|30|%|0.039603960396039604|We found that themaximum photoconversion efficiency (about 27% for AM<missing VAR>1.5 conditions) in GaAswith typical parameters of recombination centers can be reached for p<missing VAR>-type basedoped at 2 cdot 1017 cm-3.|The optimization provides a significantincrease in VOC and the limiting photoconversion efficiency close to 30%.|0
Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi|TiO2|52.4|%|0.015410958904109588|Results from the Atomic Force Microscope (AFM) alsoconfirms the minimized surface roughness of 16.36 nm for the optimally exposedTiO2 film, and increase in hydrophilicity leading to improved efficiency of thesolar cells which were optimally exposed to UV-O3.|This increase in efficiency is attributed to theenhanced crystallization and reduction in the organic contaminants C-C/C-H from57.90 to 52.40% as shown by the X<missing VAR>-ray diffraction (XRD) and X<missing VAR>-ray photoelectronspectroscopy (X<missing VAR>PS), respectively.|0
All-Inorganic Spin-Cast Nanoparticle Solar Cells with Non-Selective Electrodes|I. E. Anderson,J. D. Olson,L. Yang,S. A. Carter|CdTe/CdSe|2.8|%|0.5|Spin-cast all-inorganic nanoparticle solutions have been used to make aCdTe/CdSe solar cell with an efficiency of up to 2.8% without alumina orcalcium buffer layers.|Spin-cast all-inorganic nanoparticle solutions have been used to make aCdTe/CdSe solar cell with an efficiency of up to 2.8% without alumina orcalcium buffer layers.|0
Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite|Yu-Hsien Chiang,Kyle Frohna,Hayden Salway,Anna Abfalterer,Bart Roose,Miguel Anaya,Samuel D. Stranks|Cs0.3Pb(I0.64Br0.36)3|24.1|%|1.0|By similarlypassivating a narrow bandgap FA0.75Cs0.25Pb0.5Sn0.5I3perovskite and combining it with sub-cells of evaporatedFA0.7Cs0.3Pb(I0.64Br0.36)3, we report a 2-terminalall-perovskite tandem solar cell with champion open circuit voltage and powerconversion efficiency of 2.06 V and 24.1%, respectively.|By similarlypassivating a narrow bandgap FA0.75Cs0.25Pb0.5Sn0.5I3perovskite and combining it with sub-cells of evaporatedFA0.7Cs0.3Pb(I0.64Br0.36)3, we report a 2-terminalall-perovskite tandem solar cell with champion open circuit voltage and powerconversion efficiency of 2.06 V and 24.1%, respectively.|0
Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia|GaInP|93|%|1.0|This last approach enables ahigh-conductivity multijunction solar cell device without redesigning thetunnel junction as well as a high electronic quality in the GaInP subcell,which shows a collection efficiency higher than 93% and an open-circuit-voltageoffset of 410 mV at 1 sun irradiance.|This last approach enables ahigh-conductivity multijunction solar cell device without redesigning thetunnel junction as well as a high electronic quality in the GaInP subcell,which shows a collection efficiency higher than 93% and an open-circuit-voltageoffset of 410 mV at 1 sun irradiance.|0
Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen|Cu2Zn|2.66|%|0.0007575757575757576|Opto-electronic properties and solar cell efficiency modelling of Cu2ZnX<missing VAR>S4 (X<missing VAR>Sn,Ge,Si) kesterites.|Usingan internal quantum efficiency providing VOC values comparable toexperimental measurements, solar cell efficiencies of 15.88, 14.98 and 2.66%are reported respectively for CZTS, CZGS and CZ<missing VAR>SS (for an optimal thickness of1.15 mum).|0
Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen|Cu2Zn|10|%|0.0011770244821092278|Opto-electronic properties and solar cell efficiency modelling of Cu2ZnX<missing VAR>S4 (X<missing VAR>Sn,Ge,Si) kesterites.|With this methodology, we confirm the suitability of CZTS insingle junction solar cells, with a possible efficiency improvement of 10%enabled through the reduction of the non-radiative recombination rate.|0
Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li|AlSbTe|10.6|%|0.5|Theconversion efficiency can be improved from 10.6% to15.3% for introducingAlSbTe, AlSbCu and ZnTeCu thin films to CdS/ AlSb structure.|Theconversion efficiency can be improved from 10.6% to15.3% for introducingAlSbTe, AlSbCu and ZnTeCu thin films to CdS/ AlSb structure.|0
Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li|AlSbTe|15.3|%|0.5|Theconversion efficiency can be improved from 10.6% to15.3% for introducingAlSbTe, AlSbCu and ZnTeCu thin films to CdS/ AlSb structure.|Theconversion efficiency can be improved from 10.6% to15.3% for introducingAlSbTe, AlSbCu and ZnTeCu thin films to CdS/ AlSb structure.|0
Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk|SSe|21.74|%|0.8888888888888888|An efficiency of 21.74% is predicted with sinusoidal grading of a870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achievedexperimentally with a 2200-nm-thick homogeneous CZTSSe layer.|An efficiency of 21.74% is predicted with sinusoidal grading of a870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achievedexperimentally with a 2200-nm-thick homogeneous CZTSSe layer.|1
Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk|SSe|12.6|%|0.5|An efficiency of 21.74% is predicted with sinusoidal grading of a870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achievedexperimentally with a 2200-nm-thick homogeneous CZTSSe layer.|An efficiency of 21.74% is predicted with sinusoidal grading of a870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achievedexperimentally with a 2200-nm-thick homogeneous CZTSSe layer.|1
Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk|AlGaAs|33.1|%|1.0|An efficiency of 33.1% with the 2000-nm-thick n<missing VAR>-AlGaAs absorberlayer is predicted with linearly graded bandgap along with silver backreflectorand localized ohmic backcontacts, in comparison to 27.4% efficiency obtainedwith homogeneous bandgap and a continuous ohmic backcontact.|An efficiency of 33.1% with the 2000-nm-thick n<missing VAR>-AlGaAs absorberlayer is predicted with linearly graded bandgap along with silver backreflectorand localized ohmic backcontacts, in comparison to 27.4% efficiency obtainedwith homogeneous bandgap and a continuous ohmic backcontact.|1
Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk|AlGaAs|27.4|%|1.0|An efficiency of 33.1% with the 2000-nm-thick n<missing VAR>-AlGaAs absorberlayer is predicted with linearly graded bandgap along with silver backreflectorand localized ohmic backcontacts, in comparison to 27.4% efficiency obtainedwith homogeneous bandgap and a continuous ohmic backcontact.|An efficiency of 33.1% with the 2000-nm-thick n<missing VAR>-AlGaAs absorberlayer is predicted with linearly graded bandgap along with silver backreflectorand localized ohmic backcontacts, in comparison to 27.4% efficiency obtainedwith homogeneous bandgap and a continuous ohmic backcontact.|1
Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk|AlGaAs|34.5|%|0.17894736842105263|An efficiency of 33.1% with the 2000-nm-thick n<missing VAR>-AlGaAs absorberlayer is predicted with linearly graded bandgap along with silver backreflectorand localized ohmic backcontacts, in comparison to 27.4% efficiency obtainedwith homogeneous bandgap and a continuous ohmic backcontact.|Sinusoidal gradingof the bandgap is predicted to enhance the maximum efficiency to 34.5%.|0
Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin|SSe|12.6|%|0.00027533039647577095|A champion CZTSSesolar cell with a total area efficiency of 12.4% (active are efficiency 13.6%)and low Voc,def of 0.297 V was achieved from Sn4+ solution.|The limiting factor preventing kesterite (CZTSSe) thin film solar cellperformance further improvement is the large open-circuit voltage deficit(Voc,def) issue, which is 0.345V for the current world record device with anefficiency of 12.6%.|0
Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin|SSe|8.84|%|0.009014423076923076|A champion CZTSSesolar cell with a total area efficiency of 12.4% (active are efficiency 13.6%)and low Voc,def of 0.297 V was achieved from Sn4+ solution.|The highestefficiency obtained from this film is 8.84% with a Voc,def of 0.391V.|0
Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin|SSe|12.2|%|0.020202020202020204|A champion CZTSSesolar cell with a total area efficiency of 12.4% (active are efficiency 13.6%)and low Voc,def of 0.297 V was achieved from Sn4+ solution.|A device with active area efficiency 12.2% and a Voc,def of 0.344V was achieved from Sn4+ solution processed absorber.|1
Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin|SSe|12.4|%|0.5|A champion CZTSSesolar cell with a total area efficiency of 12.4% (active are efficiency 13.6%)and low Voc,def of 0.297 V was achieved from Sn4+ solution.|A champion CZTSSesolar cell with a total area efficiency of 12.4% (active are efficiency 13.6%)and low Voc,def of 0.297 V was achieved from Sn4+ solution.|1
Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin|SSe|13.6|%|0.5|A champion CZTSSesolar cell with a total area efficiency of 12.4% (active are efficiency 13.6%)and low Voc,def of 0.297 V was achieved from Sn4+ solution.|A champion CZTSSesolar cell with a total area efficiency of 12.4% (active are efficiency 13.6%)and low Voc,def of 0.297 V was achieved from Sn4+ solution.|0
Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware|InGaN|60|%|0.5|The maximum efficiencyis obtained for the InGaN well with 60% In.|The maximum efficiencyis obtained for the InGaN well with 60% In.|0
Solar water splitting: efficiency discussion|Jurga Juodkazyte,Gediminas Seniutinas,Benjaminas Sebeka,Irena Savickaja,Tadas Malinauskas,Kazimieras Badokas,Kestutis Juodkazis,Saulius Juodkazis|Si/Ni|52|%|1.0|Solar hydrogen production with electrical-to-hydrogen conversion efficiencyof 52% is demonstrated using a simple 0.7%-efficient n<missing VAR>-Si/Ni Schottky solarcell connected to a water electrolysis cell.|Solar hydrogen production with electrical-to-hydrogen conversion efficiencyof 52% is demonstrated using a simple 0.7%-efficient n<missing VAR>-Si/Ni Schottky solarcell connected to a water electrolysis cell.|0
Solar water splitting: efficiency discussion|Jurga Juodkazyte,Gediminas Seniutinas,Benjaminas Sebeka,Irena Savickaja,Tadas Malinauskas,Kazimieras Badokas,Kestutis Juodkazis,Saulius Juodkazis|Si/Ni|0.7|%|0.5|Solar hydrogen production with electrical-to-hydrogen conversion efficiencyof 52% is demonstrated using a simple 0.7%-efficient n<missing VAR>-Si/Ni Schottky solarcell connected to a water electrolysis cell.|Solar hydrogen production with electrical-to-hydrogen conversion efficiencyof 52% is demonstrated using a simple 0.7%-efficient n<missing VAR>-Si/Ni Schottky solarcell connected to a water electrolysis cell.|0
Solar water splitting: efficiency discussion|Jurga Juodkazyte,Gediminas Seniutinas,Benjaminas Sebeka,Irena Savickaja,Tadas Malinauskas,Kazimieras Badokas,Kestutis Juodkazis,Saulius Juodkazis|Si/Ni|10|%|0.09117647058823529|Solar hydrogen production with electrical-to-hydrogen conversion efficiencyof 52% is demonstrated using a simple 0.7%-efficient n<missing VAR>-Si/Ni Schottky solarcell connected to a water electrolysis cell.|This case study shows thatseparation of the processes of solar harvesting and electrolysis avoidsphoto-electrode corrosion and utilizes optimal electrodes for hydrogen andoxygen evolution reactions and achieves 10% efficiency in light-to-hydrogenconversion with a standard 18% efficient household roof Si-solar cells.|1
Solar water splitting: efficiency discussion|Jurga Juodkazyte,Gediminas Seniutinas,Benjaminas Sebeka,Irena Savickaja,Tadas Malinauskas,Kazimieras Badokas,Kestutis Juodkazis,Saulius Juodkazis|Si/Ni|18|%|0.02102803738317757|Solar hydrogen production with electrical-to-hydrogen conversion efficiencyof 52% is demonstrated using a simple 0.7%-efficient n<missing VAR>-Si/Ni Schottky solarcell connected to a water electrolysis cell.|This case study shows thatseparation of the processes of solar harvesting and electrolysis avoidsphoto-electrode corrosion and utilizes optimal electrodes for hydrogen andoxygen evolution reactions and achieves 10% efficiency in light-to-hydrogenconversion with a standard 18% efficient household roof Si-solar cells.|1
Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations|Mohammad Jobayer Hossain,Bibek Tiwari,Indranil Bhattacharya|In0.51Ga0.49P|47.2|%|1.0|A high theoretical efficiency of 47.2% was achieved by a novel combination ofIn0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in asimulated quadruple junction solar cell under 1 sun concentration.|A high theoretical efficiency of 47.2% was achieved by a novel combination ofIn0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in asimulated quadruple junction solar cell under 1 sun concentration.|0
Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu|(SnF2)|18.5|%|0.0018712574850299401|Tin fluoride (SnF2) is an indispensable additive for high-efficiency Pb-Snperovskite solar cells (PSCs).|When integratingthe optimized absorber in flexible devices, we obtained the flexible Pb-Snperovskite narrow bandgap (1.24 e<missing VAR>V) solar cells with an efficiency of 18.5% anddemonstrated 23.1%-efficient flexible 4-terminal all-perovskite tandem cells.|1
Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu|(SnF2)|23.1|%|0.005604288499025341|Tin fluoride (SnF2) is an indispensable additive for high-efficiency Pb-Snperovskite solar cells (PSCs).|When integratingthe optimized absorber in flexible devices, we obtained the flexible Pb-Snperovskite narrow bandgap (1.24 e<missing VAR>V) solar cells with an efficiency of 18.5% anddemonstrated 23.1%-efficient flexible 4-terminal all-perovskite tandem cells.|1
Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip|AlInN|18|%|0.39473684210526316|Optimized AlInN on Siheterostructure shows a conversion efficiency of 18% under 1-sun AM1.5Gillumination for low-quality Si wafers, which increases to 23.6% forhigh-quality Si wafers and incorporating a properly designed anti-reflectivelayer.|Optimized AlInN on Siheterostructure shows a conversion efficiency of 18% under 1-sun AM1.5Gillumination for low-quality Si wafers, which increases to 23.6% forhigh-quality Si wafers and incorporating a properly designed anti-reflectivelayer.|1
Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip|AlInN|23.6|%|0.18867924528301888|Optimized AlInN on Siheterostructure shows a conversion efficiency of 18% under 1-sun AM1.5Gillumination for low-quality Si wafers, which increases to 23.6% forhigh-quality Si wafers and incorporating a properly designed anti-reflectivelayer.|Optimized AlInN on Siheterostructure shows a conversion efficiency of 18% under 1-sun AM1.5Gillumination for low-quality Si wafers, which increases to 23.6% forhigh-quality Si wafers and incorporating a properly designed anti-reflectivelayer.|1
Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu|CH3NH3PbI3|14.4|%|0.5|By optimizing the dryingtemperature to 60 oC, the highest efficiency of 14.4% was achieved for theCH3NH3PbI3-based solar cell devices.|By optimizing the dryingtemperature to 60 oC, the highest efficiency of 14.4% was achieved for theCH3NH3PbI3-based solar cell devices.|0
Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni|CdS|47|%|0.08041958041958042|In order to study the effect of theAR<missing VAR> layer on the efficiency of solar cells, this substrate was utilized in CdSQDSCs.|This efficiency was increasedby about 47% compared to the reference cell without the AR<missing VAR> layer.|0
Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen|S/Si|1.1|%|0.5|Based on these results, we demonstrate a firstproof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1%and a Voc of 900 mV.|Based on these results, we demonstrate a firstproof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1%and a Voc of 900 mV.|0
Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo|AlInN|1.5|%|0.5|Adding a 4-nm-thick AlN buffer layer improves the AlInN crystalline quality andthe interface alignment leading to devices with a conversion efficiency of 1.5%under 1-sun AM1.5G illumination.|Adding a 4-nm-thick AlN buffer layer improves the AlInN crystalline quality andthe interface alignment leading to devices with a conversion efficiency of 1.5%under 1-sun AM1.5G illumination.|0
Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics|Xiucheng Wei,Haolei Hui,Samanthe Perera,Aaron Sheng,David F. Watson,Yi-Yang Sun,Quanxi Jia,Shengbai Zhang,Hao Zeng|BaZrS3|32|%|0.13953488372093023|It is found that Ti alloying is extremelyeffective in band gap reduction of BaZrS3 a mere 4 at% alloying decreases theband gap from 1.78 to 1.51 eV, resulting in a theoretical maximum powerconversion efficiency of 32%.|It is found that Ti alloying is extremelyeffective in band gap reduction of BaZrS3 a mere 4 at% alloying decreases theband gap from 1.78 to 1.51 eV, resulting in a theoretical maximum powerconversion efficiency of 32%.|0
Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng|SSe|12.63|%|0.3620689655172414|Finally,the flexible CZTSSe cell fabricated by this strategy has reached a hightotal-area efficiency of 12.63% (active-area efficiency of 13.2%), with its VOCand FF reaching 538 mV and 0.70, respectively.|Finally,the flexible CZTSSe cell fabricated by this strategy has reached a hightotal-area efficiency of 12.63% (active-area efficiency of 13.2%), with its VOCand FF reaching 538 mV and 0.70, respectively.|0
Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng|SSe|13.2|%|0.10975609756097561|Finally,the flexible CZTSSe cell fabricated by this strategy has reached a hightotal-area efficiency of 12.63% (active-area efficiency of 13.2%), with its VOCand FF reaching 538 mV and 0.70, respectively.|Finally,the flexible CZTSSe cell fabricated by this strategy has reached a hightotal-area efficiency of 12.63% (active-area efficiency of 13.2%), with its VOCand FF reaching 538 mV and 0.70, respectively.|0
Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain|CdTe|13.26|%|0.2619047619047619|Forusing CdTe as a single absorber, the efficiency is achieved by 13.26%.|Forusing CdTe as a single absorber, the efficiency is achieved by 13.26%.|0
Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain|FeSi2|27.35|%|1.0|But forusing CdTe and FeSi2 as a dual absorber, the efficiency is enhanced and theobtaining value is 27.35%.|But forusing CdTe and FeSi2 as a dual absorber, the efficiency is enhanced and theobtaining value is 27.35%.|0
Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui|TiO2|52.7|%|0.5714285714285714|Thecorresponding maximum quantum efficiency for the codoped TiO2 can reach52.7%.|Thecorresponding maximum quantum efficiency for the codoped TiO2 can reach52.7%.|0
Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui|TiO2|56.7|%|0.20175438596491227|Thecorresponding maximum quantum efficiency for the codoped TiO2 can reach52.7%.|In the second scheme, current is also extracted from the IB, resultingin a further enhancement in the maximum efficiency to 56.7%.|0
Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang|Au/I|20.1|%|0.25|When the device was illuminated simultaneously fromboth the FT<missing VAR>O and Au/IT<missing VAR>O sides, the PSC has achieved an overall power conversionefficiency (PCE) as high as 20.1% under high light intensity (1.4 sun), whichis much higher than that of the single-irradiation system.|When the device was illuminated simultaneously fromboth the FT<missing VAR>O and Au/IT<missing VAR>O sides, the PSC has achieved an overall power conversionefficiency (PCE) as high as 20.1% under high light intensity (1.4 sun), whichis much higher than that of the single-irradiation system.|0
Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency|Mohammad Jobayer Hossain|In0.51Ga0.49P|47.2082|%|1.0|A high photon to electricity conversion efficiency of 47.2082% was achievedby a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As andIn0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design.|A high photon to electricity conversion efficiency of 47.2082% was achievedby a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As andIn0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design.|1
Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency|Mohammad Jobayer Hossain|In0.19Ga0.81Sb|44.5473|%|0.019336219336219335|A high photon to electricity conversion efficiency of 47.2082% was achievedby a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As andIn0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design.|With a short circuit current densityof 18.5 mA/cm2, open circuit voltage of 3.4104 and the fill factor of 0.9557,the power conversion efficiency of the modified quadruple junction design is44.5473% in space.|1
Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier|GaAs/Si|29.6|%|1.0|This work aimsat developping building blocks to further develop a GaAs/Si tandem demonstratorwith a potential conversion efficiency of 29.6% under AM1.5G spectrum withoutconcentration, as inferred from our realistic modeling.|This work aimsat developping building blocks to further develop a GaAs/Si tandem demonstratorwith a potential conversion efficiency of 29.6% under AM1.5G spectrum withoutconcentration, as inferred from our realistic modeling.|0
Accelerated development of CuSbS2 thin film photovoltaic device prototypes|Adam W. Welch,Lauryn L. Baranowski,Pawel Zawadzki,Clay DeHart,Steve Johnston,Stephan Lany,Colin A. Wolden,Andriy Zakutayev|CuSbS2|1|%|0.5|This exploration results in initial CuSbS2 deviceprototypes with 1% conversion efficiency; currently limited by lowshort-circuit current due to poor collection of photoexcited electrons, and asmall open-circuit voltage due to a cliff-type conduction band offset at theCuSbS2/CdS interface (suggested by first-principles calculations).|This exploration results in initial CuSbS2 deviceprototypes with 1% conversion efficiency; currently limited by lowshort-circuit current due to poor collection of photoexcited electrons, and asmall open-circuit voltage due to a cliff-type conduction band offset at theCuSbS2/CdS interface (suggested by first-principles calculations).|0
Embedding Physics Domain Knowledge into a Bayesian Network Enables Layer-by-Layer Process Innovation for Photovoltaics|Zekun Ren,Felipe Oviedo,Muang Thway,Siyu I. P. Tian,Yue Wang,Hansong Xue,Jose Dario Perea,Mariya Layurova,Thomas Heumueller,Erik Birgersson,Armin Aberle,Christoph J. Brabec,Rolf Stangl,Shijing Sun,Qianxiao Li,Fen Lin,Ian Marius Peters,Tonio Buonassisi|GaAs|6.5|%|0.5|In a singlecycle of learning, we find an improved growth temperature for the GaAs solarcells without any secondary measurements, and demonstrate a 6.5% relativeAM1.5G efficiency improvement above baseline and traditional black-boxoptimization methods.|In a singlecycle of learning, we find an improved growth temperature for the GaAs solarcells without any secondary measurements, and demonstrate a 6.5% relativeAM1.5G efficiency improvement above baseline and traditional black-boxoptimization methods.|0
Hexagonal Rare-Earth Manganites as Promising Photovoltaics and Light Polarizers|Xin Huang,Tula R. Paudel,Shuai Dong,Evgeny Y. Tsymbal|TbMnO3|33|%|0.4925373134328358|Using first-principles methods based ondensity-functional theory and considering h<missing VAR>-TbMnO3 as a representativemanganite, we predict a strong light absorption of this material in the solarspectrum range, resulting in the maximum light-to-electricity energy conversionefficiency up to 33%.|Using first-principles methods based ondensity-functional theory and considering h<missing VAR>-TbMnO3 as a representativemanganite, we predict a strong light absorption of this material in the solarspectrum range, resulting in the maximum light-to-electricity energy conversionefficiency up to 33%.|0
High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya|Sn(II)|32.08|%|0.3333333333333333|The most suitable configurations with Ge(II) and Sn(II) substitutions havespectroscopic limited maximum efficiency (SLME) of 32.08% and 30.91%,respectively, which are apt for solar cell absorber.|The most suitable configurations with Ge(II) and Sn(II) substitutions havespectroscopic limited maximum efficiency (SLME) of 32.08% and 30.91%,respectively, which are apt for solar cell absorber.|1
High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya|Sn(II)|30.91|%|0.4482758620689655|The most suitable configurations with Ge(II) and Sn(II) substitutions havespectroscopic limited maximum efficiency (SLME) of 32.08% and 30.91%,respectively, which are apt for solar cell absorber.|The most suitable configurations with Ge(II) and Sn(II) substitutions havespectroscopic limited maximum efficiency (SLME) of 32.08% and 30.91%,respectively, which are apt for solar cell absorber.|1
Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf|CuSCN|18.45|%|0.5|Atoptimum condition, the device revealed the highest efficiency of 18.45% forCuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration.|Atoptimum condition, the device revealed the highest efficiency of 18.45% forCuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration.|1
Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf|CuSCN|19.32|%|0.35|Atoptimum condition, the device revealed the highest efficiency of 18.45% forCuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration.|Atoptimum condition, the device revealed the highest efficiency of 18.45% forCuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration.|1
Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt|ZnO|14|%|0.0006958942240779402|A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al(Zn,Mg)O showsthe necessity to replace the ZnO i<missing VAR>-layer with Al(Zn,Mg)O i<missing VAR>-layer for ahigh-efficiency device.|Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2 Systematic approach to achieve over 14% power conversion efficiency.|0
Efficient light-trapping in ultrathin GaAs solar cells using quasi-random photonic crystals|Jeronimo Buencuerpo,Theresa E. Saenz,Mark Steger,Michelle Young,Emily L. Warren,John F. Geisz,Myles A. Steiner,Adele C. Tamboli|GaAs|22.35|%|1.0|We demonstratean ultrathin GaAs cell of 260 nm with a rear quasi-random pattern withsubmicron features, and a Jsc 26.4 m<missing VAR>A/cm2 and an efficiency of 22.35% underthe global solar spectrum.|We demonstratean ultrathin GaAs cell of 260 nm with a rear quasi-random pattern withsubmicron features, and a Jsc 26.4 m<missing VAR>A/cm2 and an efficiency of 22.35% underthe global solar spectrum.|0
Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei|CH3NH3PbI3|20|%|0.7142857142857143|The organic-inorganic hybrid perovskite CH3NH3PbI3 has attracted significantinterest for its high performance in converting solar light into electricalpower with an efficiency exceeding 20%.|The organic-inorganic hybrid perovskite CH3NH3PbI3 has attracted significantinterest for its high performance in converting solar light into electricalpower with an efficiency exceeding 20%.|0
Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells|Shengjiao Zhang,Shisheng Lin,Xiaoqiang Li,Xiaoyi Liu,Hengan Wu,Peng Wang,Zhiqian Wu,Huikai Zhong,Wenli Xu,Zhijuan Xu|GaAs|33.7|%|1.0|Moreover, theSiG<missing VAR>/GaAs heterostructure solar cells show an improved power conversionefficiency of 33.7% in average than that of graphene/GaAs solar cells, whichare attributed to the increased barrier height and improved interface quality.|Moreover, theSiG<missing VAR>/GaAs heterostructure solar cells show an improved power conversionefficiency of 33.7% in average than that of graphene/GaAs solar cells, whichare attributed to the increased barrier height and improved interface quality.|0
Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler|PbI|15|%|0.13333333333333333|Integrating these printed transport layers in planar inverted PSCsallows rapid fabrication of high efficiency (PCE<missing VAR> > 15%) Cs(x)FA(1-x)PbI solarcells with improved short circuit currents (Jsc) of 22.4 mA/cm2.|Integrating these printed transport layers in planar inverted PSCsallows rapid fabrication of high efficiency (PCE<missing VAR> > 15%) Cs(x)FA(1-x)PbI solarcells with improved short circuit currents (Jsc) of 22.4 mA/cm2.|0
Efficient Extraction of Hot Carriers in Perovskite Quantum Dot through Building State Coupled Complex|Yusheng Li,Junke Jiang,Dandan Wang,Dong Liu,Shota Yajima,Hua Li,Akihito Fuchimoto,Hongshi Li,Guozheng Shi,Shuzi Hayase,Shuxia Tao,Jiangjian Shi,Qingbo Meng,Chao Ding,Qing Shen|CsPbI3|84|%|0.5942028985507246|Herein,we build series of CsPbI3 quantum dot and fullerene derivative systems toexplore the decisive factors of this process and have for the first timerealized efficient hot carrier extraction in these systems (maximum extractionefficiency  84%).|Herein,we build series of CsPbI3 quantum dot and fullerene derivative systems toexplore the decisive factors of this process and have for the first timerealized efficient hot carrier extraction in these systems (maximum extractionefficiency  84%).|0
Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad|TiO2|40|%|1.0|carbon nanospheres in the TiO2 pastes, we were ableto increase the short circuit current density and efficiency by 40% (from 12.59to 17.73 mA/cm2) and 33% (from 5.72% to 7.59%), respectively.|carbon nanospheres in the TiO2 pastes, we were ableto increase the short circuit current density and efficiency by 40% (from 12.59to 17.73 mA/cm2) and 33% (from 5.72% to 7.59%), respectively.|1
Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad|TiO2|33|%|1.0|carbon nanospheres in the TiO2 pastes, we were ableto increase the short circuit current density and efficiency by 40% (from 12.59to 17.73 mA/cm2) and 33% (from 5.72% to 7.59%), respectively.|carbon nanospheres in the TiO2 pastes, we were ableto increase the short circuit current density and efficiency by 40% (from 12.59to 17.73 mA/cm2) and 33% (from 5.72% to 7.59%), respectively.|1
Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad|TiO2|5.72|%|0.5|carbon nanospheres in the TiO2 pastes, we were ableto increase the short circuit current density and efficiency by 40% (from 12.59to 17.73 mA/cm2) and 33% (from 5.72% to 7.59%), respectively.|carbon nanospheres in the TiO2 pastes, we were ableto increase the short circuit current density and efficiency by 40% (from 12.59to 17.73 mA/cm2) and 33% (from 5.72% to 7.59%), respectively.|0
Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad|TiO2|7.59|%|0.5|carbon nanospheres in the TiO2 pastes, we were ableto increase the short circuit current density and efficiency by 40% (from 12.59to 17.73 mA/cm2) and 33% (from 5.72% to 7.59%), respectively.|carbon nanospheres in the TiO2 pastes, we were ableto increase the short circuit current density and efficiency by 40% (from 12.59to 17.73 mA/cm2) and 33% (from 5.72% to 7.59%), respectively.|0
Revealing the role of organic cations in hybrid halide perovskites CH3NH3PbI3|Carlo Motta,Fedwa El Mellouhi,Sabre Kais,Nouar Tabet,Fahhad Alharbi,Stefano Sanvito|CH3NH3PbI3|18|%|0.5|The hybrid halide perovskite CH3NH3PbI3 has enabled solarcells to reach an efficiency of about 18%, demonstrating a pace forimprovements with no precedents in the solar energy arena.|The hybrid halide perovskite CH3NH3PbI3 has enabled solarcells to reach an efficiency of about 18%, demonstrating a pace forimprovements with no precedents in the solar energy arena.|0
Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang|PCSN|23|%|1.0|PCSNPs with 5-nm shell give highest efficiency enhancement of23%.|PCSNPs with 5-nm shell give highest efficiency enhancement of23%.|0
Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina|GaAs|28|%|0.06156994047619047|In the GaAs wavelength range, the ELO QDcell perfectly preserves the current collection efficiency of the baselinesingle-junction ELO cell.|Provided thatmaterial quality issues are solved, we demonstrate - by transport and rigorouselectromagnetic simulations - that light-trapping enhanced thin-film cells withtwenty InAs/GaAs QD layers reach efficiency higher than 28% underunconcentrated light, ambient temperature.|0
Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina|GaAs|30|%|0.05401785714285714|In the GaAs wavelength range, the ELO QDcell perfectly preserves the current collection efficiency of the baselinesingle-junction ELO cell.|If photon recycling can be fullyexploited, 30% efficiency is deemed to be feasible.|0
Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson|CuInSe2|15.0|%|0.5|Efficiency, open-circuit voltage (VOC), and fill factor (FF) were greatlyenhanced for x<missing VAR>  0.07, resulting in an officially-measured 15.0%-efficientsolar cell, matching to the world record CuInSe2 efficiency.|Efficiency, open-circuit voltage (VOC), and fill factor (FF) were greatlyenhanced for x<missing VAR>  0.07, resulting in an officially-measured 15.0%-efficientsolar cell, matching to the world record CuInSe2 efficiency.|0
Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson|KInSe2|14.9|%|0.15625|After optimization (75nm surface layer with x<missing VAR>  0.41), these KInSe2 surface samples exhibitedincreased efficiency (officially 14.9%), VOC, and FF as a result of decreasedinterface recombination.|After optimization (75nm surface layer with x<missing VAR>  0.41), these KInSe2 surface samples exhibitedincreased efficiency (officially 14.9%), VOC, and FF as a result of decreasedinterface recombination.|0
CuSbSe2 photovoltaic devices with 3% efficiency|Adam Welch,Lauryn Baranowski,Pawel Zawadzki,Stephan Lany,Colin Wolden,Andriy Zakutayev|CuSbSe2|3|%|0.5|CuSbSe2 photovoltaic devices with 3% efficiency.|CuSbSe2 photovoltaic devices with 3% efficiency.|0
CuSbSe2 photovoltaic devices with 3% efficiency|Adam Welch,Lauryn Baranowski,Pawel Zawadzki,Stephan Lany,Colin Wolden,Andriy Zakutayev|CuSbSe2/CdS|3|%|0.09473684210526316|The promising >3% energy conversion efficiency (Jsc  20 mA/cm2, FF  0.44,Voc  0.35 V) in these initial devices is limited by bulk recombination thatlimits photocurrent, device engineering issues that affect fill factor, and aphotovoltage deficit that likely results from the non-ideal CuSbSe2/CdS bandoffset.|The promising >3% energy conversion efficiency (Jsc  20 mA/cm2, FF  0.44,Voc  0.35 V) in these initial devices is limited by bulk recombination thatlimits photocurrent, device engineering issues that affect fill factor, and aphotovoltage deficit that likely results from the non-ideal CuSbSe2/CdS bandoffset.|0
Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki|TiO2|8|%|0.08333333333333333|Hierarchical D<missing VAR>SSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%.|Hierarchical D<missing VAR>SSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%.|0
Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early-stage photovoltaic material|R. Jaramillo,Meng-Ju Sher,Benjamin K. Ofori-Okai,V. Steinmann,Chuanxi Yang,Katy Hartman,Keith A. Nelson,Aaron M. Lindenberg,Roy G. Gordon,T. Buonassisi|(SnS)|5|%|0.3333333333333333|Tin sulfide (SnS) isan absorber material with several clear advantages for manufacturing anddeployment, but the record power conversion efficiency remains below 5%.|Tin sulfide (SnS) isan absorber material with several clear advantages for manufacturing anddeployment, but the record power conversion efficiency remains below 5%.|0
Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir|CdTe|57.4|%|0.0016666666666666668|Thismeans that IT<missing VAR>O films with lower electrical properties will be more suitable forhigh-efficiency CdTe solar cells.|When the thickness of theIT<missing VAR>O window layer is 325 nm, Voc  0.82 V, Jsc  17 mA/cm2, and FF  57.4%, thehighest power conversion efficiency (PCE) is 8.6%.|1
Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir|CdTe|8.6|%|0.0015120967741935483|Thismeans that IT<missing VAR>O films with lower electrical properties will be more suitable forhigh-efficiency CdTe solar cells.|When the thickness of theIT<missing VAR>O window layer is 325 nm, Voc  0.82 V, Jsc  17 mA/cm2, and FF  57.4%, thehighest power conversion efficiency (PCE) is 8.6%.|1
Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif|S/Au|17.9|%|0.5|Among 96 device structures, the best-optimized device structure,IT<missing VAR>O/TiO2/CsPbI3/CBT<missing VAR>S/Au was identified, which exhibited an efficiency of 17.9%.|Among 96 device structures, the best-optimized device structure,IT<missing VAR>O/TiO2/CsPbI3/CBT<missing VAR>S/Au was identified, which exhibited an efficiency of 17.9%.|0
Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf|GaAs|13.75|%|0.001097366320830008|Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell.|The effect of surface recombinationvelocity (SR<missing VAR>V) has also been brought under observation and the maximumefficiency is found to be 13.75% at electron and hole SR<missing VAR>V equal to be 103ms-1.|0
First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen|GeSe4|20|%|0.008917589175891758|Our results show that Cu2-II-GeSe4 with IICd and Hg, andCu2-II-SnS4 with IICd and Zn have a higher theoretical efficiencycompared to the materials currently used as absorber layer.|Cu-based chalcogenides are promising materials for thin-film solar cells withmore than 20% measured cell efficiency.|0
High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis|P3H|3.5|%|0.21428571428571427|Inverted OPVs comprised ofIT<missing VAR>O/ZnO/poly(3-hexylthiophene-2,5-diyl)phenyl-C61-butyric acid methyl ester(P3HT<missing VAR>PCBM)/Ag demonstrate over 3.5% power conversion efficiency only if thedevices are exposed in air for over 4 days.|Inverted OPVs comprised ofIT<missing VAR>O/ZnO/poly(3-hexylthiophene-2,5-diyl)phenyl-C61-butyric acid methyl ester(P3HT<missing VAR>PCBM)/Ag demonstrate over 3.5% power conversion efficiency only if thedevices are exposed in air for over 4 days.|0
Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev|SiH|20.5|%|0.01919191919191919|In this work, electroluminescence (EL) intensity and photoconversionefficiency of a set of 93 large-area (239,cm2) a-SiH/c<missing VAR>-Si heterojunctionSCs (HJ<missing VAR>SCs) are measured under AM<missing VAR>1.5 conditions at 298 K.|It is established that EL quantumefficiency, is affected by S much more strongly than photoconversionefficiency, eta namely, the reduction of the latter from 20.5% to 18% dueto an increase of S is accompanied by a decrease of the former by more thanan order of magnitude.|0
Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev|SiH|18|%|0.006862745098039216|In this work, electroluminescence (EL) intensity and photoconversionefficiency of a set of 93 large-area (239,cm2) a-SiH/c<missing VAR>-Si heterojunctionSCs (HJ<missing VAR>SCs) are measured under AM<missing VAR>1.5 conditions at 298 K.|It is established that EL quantumefficiency, is affected by S much more strongly than photoconversionefficiency, eta namely, the reduction of the latter from 20.5% to 18% dueto an increase of S is accompanied by a decrease of the former by more thanan order of magnitude.|0
Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev|SiH|2.1|%|0.0021825396825396826|In this work, electroluminescence (EL) intensity and photoconversionefficiency of a set of 93 large-area (239,cm2) a-SiH/c<missing VAR>-Si heterojunctionSCs (HJ<missing VAR>SCs) are measured under AM<missing VAR>1.5 conditions at 298 K.|low S, ELefficiency reached 2.1%, which is notably higher than the known values insilicon homojunction diodes.|0
Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila|InP|83.7|%|0.07075471698113207|The maximum solar and blackbodyefficiency factors of layers containing InP particles was slightly less (80.2%and 60.7% for bare particles with a radius of 0.25 mum<missing VAR> and 0.60 mum<missing VAR>,respectively).|Reflectance efficiency factors of up to 83.7% and 63.9% are achievedfor near-infrared solar and blackbody radiation in 200 mum<missing VAR> thick compactlayers with only 1% volume fraction of bare Si particles with a radius of 0.23mum<missing VAR> and 0.50 mum<missing VAR>, respectively.|1
Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila|InP|63.9|%|0.09900990099009901|The maximum solar and blackbodyefficiency factors of layers containing InP particles was slightly less (80.2%and 60.7% for bare particles with a radius of 0.25 mum<missing VAR> and 0.60 mum<missing VAR>,respectively).|Reflectance efficiency factors of up to 83.7% and 63.9% are achievedfor near-infrared solar and blackbody radiation in 200 mum<missing VAR> thick compactlayers with only 1% volume fraction of bare Si particles with a radius of 0.23mum<missing VAR> and 0.50 mum<missing VAR>, respectively.|1
Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila|InP|1|%|0.045081967213114756|The maximum solar and blackbodyefficiency factors of layers containing InP particles was slightly less (80.2%and 60.7% for bare particles with a radius of 0.25 mum<missing VAR> and 0.60 mum<missing VAR>,respectively).|Reflectance efficiency factors of up to 83.7% and 63.9% are achievedfor near-infrared solar and blackbody radiation in 200 mum<missing VAR> thick compactlayers with only 1% volume fraction of bare Si particles with a radius of 0.23mum<missing VAR> and 0.50 mum<missing VAR>, respectively.|1
Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila|InP|80.2|%|1.0|The maximum solar and blackbodyefficiency factors of layers containing InP particles was slightly less (80.2%and 60.7% for bare particles with a radius of 0.25 mum<missing VAR> and 0.60 mum<missing VAR>,respectively).|The maximum solar and blackbodyefficiency factors of layers containing InP particles was slightly less (80.2%and 60.7% for bare particles with a radius of 0.25 mum<missing VAR> and 0.60 mum<missing VAR>,respectively).|1
Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila|InP|60.7|%|1.0|The maximum solar and blackbodyefficiency factors of layers containing InP particles was slightly less (80.2%and 60.7% for bare particles with a radius of 0.25 mum<missing VAR> and 0.60 mum<missing VAR>,respectively).|The maximum solar and blackbodyefficiency factors of layers containing InP particles was slightly less (80.2%and 60.7% for bare particles with a radius of 0.25 mum<missing VAR> and 0.60 mum<missing VAR>,respectively).|1
Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila|InP|90|%|0.5|The maximum solar and blackbodyefficiency factors of layers containing InP particles was slightly less (80.2%and 60.7% for bare particles with a radius of 0.25 mum<missing VAR> and 0.60 mum<missing VAR>,respectively).|The addition of an oxide coating modifies the surroundingdielectric environment, which improves the solar reflectance efficiency factorto over 90% provided it matches the scattering mode energies with the incidentspectral density.|0
Relativistic quasiparticle self-consistent electronic structure of hybrid halide perovskite photovoltaic absorbers|Federico Brivio,Keith T. Butler,Aron Walsh,Mark van Schilfgaarde|CH3NH3PbI3|15|%|0.5|Solar cells based on a light absorbing layer of the organometal halideperovskite CH3NH3PbI3 have recently reached 15% conversion efficiency,though how these materials work remains largely unknown.|Solar cells based on a light absorbing layer of the organometal halideperovskite CH3NH3PbI3 have recently reached 15% conversion efficiency,though how these materials work remains largely unknown.|0
The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury|Sn/Ge|23|%|0.5|The maximum efficiency of 23% is achieved using an active layercontaining an equal admixture of Sn/Ge and Pb.|The maximum efficiency of 23% is achieved using an active layercontaining an equal admixture of Sn/Ge and Pb.|0
The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis|CuNi|8.44|%|0.3|These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.|These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.|1
The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis|CuNi|11.45|%|0.5|These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.|These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.|1
The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis|CuO|15.3|%|0.5|These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.|These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.|1
Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad|CuIn1-xGa|10|%|0.07317073170731707|For various scenarios of bulk and interface recombinations,shunt and series resistances, AVT<missing VAR> and composition of CuIn1-xGax<missing VAR>Se2,we project the efficiency limit which - for most practical cases - is found tobe leq10% for AVT<missing VAR> geq25%.|For various scenarios of bulk and interface recombinations,shunt and series resistances, AVT<missing VAR> and composition of CuIn1-xGax<missing VAR>Se2,we project the efficiency limit which - for most practical cases - is found tobe leq10% for AVT<missing VAR> geq25%.|0
Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad|CuIn1-xGa|25|%|0.0784313725490196|For various scenarios of bulk and interface recombinations,shunt and series resistances, AVT<missing VAR> and composition of CuIn1-xGax<missing VAR>Se2,we project the efficiency limit which - for most practical cases - is found tobe leq10% for AVT<missing VAR> geq25%.|For various scenarios of bulk and interface recombinations,shunt and series resistances, AVT<missing VAR> and composition of CuIn1-xGax<missing VAR>Se2,we project the efficiency limit which - for most practical cases - is found tobe leq10% for AVT<missing VAR> geq25%.|0
Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo|CsF|20|%|0.2222222222222222|The T<missing VAR>80(time required to reduce initial efficiency by 20%) for Cl-doped PSCs was1280h<missing VAR>, while for pure CsFAPbI3 based devices only 650h.|The T<missing VAR>80(time required to reduce initial efficiency by 20%) for Cl-doped PSCs was1280h<missing VAR>, while for pure CsFAPbI3 based devices only 650h.|0
Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen|S/Si|7|%|0.39285714285714285|An efficiency of up to 7% was achieved for a CZTS/Si tandem,where the Si bottom cell is no longer the limiting factor.|An efficiency of up to 7% was achieved for a CZTS/Si tandem,where the Si bottom cell is no longer the limiting factor.|0
