 40 to
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406128, 406128)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.

 400 nm
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406133, 406133)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.

 500 us
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406169, 406169)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.

 20 cm
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406180, 406180)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.

99.9 %
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406206, 406207)
 In all cases, theincreased resilience was correlated with a 99.9% reduction in contaminantconcentration in the c<missing VAR>-Si bulk, provided by the thick polySi layer, which actsas a buried gettering layer in the tandem structure without compromising the Sipassivation quality.

7 %
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406346, 406347)
 An efficiency of up to 7% was achieved for a CZTS/Si tandem,where the Si bottom cell is no longer the limiting factor.

