Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao|MgO/CoFeB|249|%|0.4148936170212766|mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.|Here, we report spin transfer torque switching in nano-scaleperpendicular magnetic tunnel junctions with a magnetoresistance ratio up to249% and a resistance area product as low as 7.0 Omega.
Anisotropic giant magnetoresistance in NbSb2|Kefeng Wang,D. Graf,Lijun Li,C. Petrovic|NbSb2|5|%|0.5|Anisotropic giant magnetoresistance in NbSb2.|The extremely large transverse magnetoreistance (the magnetoresistant ratiosim 1.3times105% in 2 K and 9 T field, and 4.3times 106% in 0.4 Kand 32 T field, without saturation), and the metal-semiconductor crossoverinduced by magnetic field, are reported in NbSb2 single crystal withelectric current parallel to the b<missing VAR>-axis.
Anisotropic giant magnetoresistance in NbSb2|Kefeng Wang,D. Graf,Lijun Li,C. Petrovic|NbSb2|6|%|0.9777777777777777|The extremely large transverse magnetoreistance (the magnetoresistant ratiosim 1.3times105% in 2 K and 9 T field, and 4.3times 106% in 0.4 Kand 32 T field, without saturation), and the metal-semiconductor crossoverinduced by magnetic field, are reported in NbSb2 single crystal withelectric current parallel to the b<missing VAR>-axis.|The extremely large transverse magnetoreistance (the magnetoresistant ratiosim 1.3times105% in 2 K and 9 T field, and 4.3times 106% in 0.4 Kand 32 T field, without saturation), and the metal-semiconductor crossoverinduced by magnetic field, are reported in NbSb2 single crystal withelectric current parallel to the b<missing VAR>-axis.
Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono|CoFeB/MgO/CoFeB|200|%|1.0|We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).|We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|65.5|%|0.011194029850746268|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|10|%|0.009978991596638655|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|14|%|0.004213483146067416|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen|PS|51|%|0.5|The X<missing VAR>PSmeasurement suggests that Te ions are in the Teup4 state, while Mn ionsmay be in the 2 and 3 valence state.|Themagnetoresistance ratio is about 51% at 200 K in a field of 4 T.
Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs|Fe/ZnSe/Fe|100|%|0.023529411764705882|We present it ab initio calculations of the spin-dependent electronictransport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situationof a spin-injection experiment.|We show that the bulkband structure of the leads and of the semiconductor, and even more theelectronic structure of a clean and abrupt interface, are responsible for acurrent polarisation and a magnetoresistance ratio of almost the ideal 100%, ifthe transport is ballistic.
Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen|(H)|51|%|1.0|The maximummagnetoresistance ratio MR[r<missing VAR>(0)-r<missing VAR>(H)]/r<missing VAR>(0) was about 51% at 200 K and in theapplied magnetic field of 40 kOe.|The maximummagnetoresistance ratio MR[r<missing VAR>(0)-r<missing VAR>(H)]/r<missing VAR>(0) was about 51% at 200 K and in theapplied magnetic field of 40 kOe.
Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava|LaAlO3|5|%|0.00835253456221198|Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.|The DLCM<missing VAR>O films exhibit resonable low fieldmagnetoresistance and at 77K the magnetoresistance ratio is  5% at 0.6 kOe and 13% at 3 kOe.
Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava|LaAlO3|13|%|0.01079734219269103|Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.|The DLCM<missing VAR>O films exhibit resonable low fieldmagnetoresistance and at 77K the magnetoresistance ratio is  5% at 0.6 kOe and 13% at 3 kOe.
Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski|Co60Fe20B20/MgO/Co60Fe20B20|30|%|0.010673234811165846|Here we present direct measurements of boththe magnitude and direction of the spin torque in Co60Fe20B20/MgO/Co60Fe20B20MTJs.|The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan|FeRh|20|%|1.0|The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.|The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.
L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang|FePd|25|%|0.3387096774193548|Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.|Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang|FePd|60|%|0.24285714285714285|Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.|Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses|Zdeněk Kašpar,Miloslav Surýnek,Jan Zubáč,Filip Krizek,Vít Novák,Richard P. Campion,Martin S. Wörnle,Pietro Gambardella,Xavier Marti,Petr Němec,K. W. Edmonds,S. Reimers,O. J. Amin,F. Maccherozzi,S. S. Dhesi,Peter Wadley,Jörg Wunderlich,Kamil Olejník,Tomáš Jungwirth|CuMnAs|20|%|0.5|Here we reportreversible and reproducible quenching of an antiferromagnetic CuMnAs film byeither electrical or ultrashort optical pulses into nano-fragmented domainstates.|The resulting resistivity changes approach 20% at room temperature,which is comparable to the giant magnetoresistance ratios in ferromagneticmultilayers.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|100|%|1.0|Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-h<missing VAR>BN/graphene/h<missing VAR>BN heterostructures.|Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-h<missing VAR>BN/graphene/h<missing VAR>BN heterostructures.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|50|%|0.1619718309859155|A top-layer ofbilayer-h<missing VAR>BN is used as a tunnel barrier for spin-injection and detection ingraphene with ferromagnetic cobalt electrodes.|We report surprisingly large andbias induced (differential) spin-injection (detection) polarizations up to 50%(135%) at a positive voltage bias of 0.6 V, as well as sign invertedpolarizations up to -70% (-60%) at a reverse bias of -0.4 V.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|135|%|0.12162162162162163|This demonstratesthe potential of bilayer-h<missing VAR>BN tunnel barriers for practical graphene spintronicsapplications.|We report surprisingly large andbias induced (differential) spin-injection (detection) polarizations up to 50%(135%) at a positive voltage bias of 0.6 V, as well as sign invertedpolarizations up to -70% (-60%) at a reverse bias of -0.4 V.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|-70|%|0.2777777777777778|This demonstratesthe potential of bilayer-h<missing VAR>BN tunnel barriers for practical graphene spintronicsapplications.|We report surprisingly large andbias induced (differential) spin-injection (detection) polarizations up to 50%(135%) at a positive voltage bias of 0.6 V, as well as sign invertedpolarizations up to -70% (-60%) at a reverse bias of -0.4 V.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|-60|%|0.4032258064516129|This demonstratesthe potential of bilayer-h<missing VAR>BN tunnel barriers for practical graphene spintronicsapplications.|We report surprisingly large andbias induced (differential) spin-injection (detection) polarizations up to 50%(135%) at a positive voltage bias of 0.6 V, as well as sign invertedpolarizations up to -70% (-60%) at a reverse bias of -0.4 V.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|2.7|%|0.14285714285714285|This demonstratesthe potential of bilayer-h<missing VAR>BN tunnel barriers for practical graphene spintronicsapplications.|With such enhanced spin-injection and detection polarizations, wereport a record two-terminal (inverted) spin-valve signals up to 800 Omegawith a magnetoresistance ratio of 2.7%, and we achieve spin accumulations up to4.1 meV.
Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim|NbSe2/CrPS4|16|%|1.0|ThemathrmNbSe2/CrPS4 bilayer device exhibits bias-dependent superconductingcritical-current variations of up to 16%, with the magnetochiral anisotropyreaching sim 105mathrm T<missing VAR>-1A-1.|ThemathrmNbSe2/CrPS4 bilayer device exhibits bias-dependent superconductingcritical-current variations of up to 16%, with the magnetochiral anisotropyreaching sim 105mathrm T<missing VAR>-1A-1.
Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim|CrPS4/NbSe2/CrPS4|40|%|1.0|Furthermore, themathrmCrPS4/NbSe2/CrPS4 spin-valve structure exhibits thesuperconducting diode effect with critical-current variations of up to 40%.|Furthermore, themathrmCrPS4/NbSe2/CrPS4 spin-valve structure exhibits thesuperconducting diode effect with critical-current variations of up to 40%.
Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer|SWCN|300|%|0.5517241379310345|Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.|Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami|MgO|87|%|0.5|Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.|The saturation magnetization is 380emu/cm3, almost the same as the value given by the Slater--Pauling--likerule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87%and 165%, respectively.
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami|MgO|165|%|0.5|Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.|The saturation magnetization is 380emu/cm3, almost the same as the value given by the Slater--Pauling--likerule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87%and 165%, respectively.
Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa|ZnO|96|%|0.5|We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.|We observe a high magnetoresistance ratio up to 96% at roomtemperature (RT) and find that these MTJs have asymmetric current-voltagecharacteristics, and their rectifying performances are largely dependent on themagnetization alignments of the Fe electrodes.
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti|Fe2CrTe/MgO/Fe2CrTe|1000|%|0.5|Transmission profile ofthe Fe2CrTe/MgO/Fe2CrTe heterojunction has been calculated to probe it asa magnetic tunneling junction (MTJ) material in both the cubic and tetragonalphases.|Considerably large tunneling magnetoresistance ratio (TMR) of 1000% isobserved for the tetragonal phase, which is found to be one order of magnitudelarger than that of the cubic phase.
Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu|Tb/Co|74|%|0.0594059405940594|Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions.|Thenanofabricated magnetic tunnel junction devices have an optimized bottomreference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to74% after patterning down to sub-100nm lateral dimensions.
