Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions|Kun Zhang,Huan-huan Li,Peter Grünberg,Qiang Li,Sheng-tao Ye,Yu-feng Tian,Shi-shen Yan,Zhao-jun Lin,Shi-shou Kang,Yan-xue Chen,Guo-lei Liu,Liang-mo Mei|Al/Ge|250|%|1.0|We find that therectification magnetoresistance in Al/Ge Schottky heterojunctions is as largeas 250% at room temperature, which is greatly enhanced as compared with theconventional magnetoresistance of 70%.|We find that therectification magnetoresistance in Al/Ge Schottky heterojunctions is as largeas 250% at room temperature, which is greatly enhanced as compared with theconventional magnetoresistance of 70%.
Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions|Kun Zhang,Huan-huan Li,Peter Grünberg,Qiang Li,Sheng-tao Ye,Yu-feng Tian,Shi-shen Yan,Zhao-jun Lin,Shi-shou Kang,Yan-xue Chen,Guo-lei Liu,Liang-mo Mei|Al/Ge|70|%|0.6041666666666666|We find that therectification magnetoresistance in Al/Ge Schottky heterojunctions is as largeas 250% at room temperature, which is greatly enhanced as compared with theconventional magnetoresistance of 70%.|We find that therectification magnetoresistance in Al/Ge Schottky heterojunctions is as largeas 250% at room temperature, which is greatly enhanced as compared with theconventional magnetoresistance of 70%.
Magnetoresistance in a High Mobility Two-Dimensional Electron Gas|L. Bockhorn,P. Barthold,D. Schuh,W. Wegscheider,R. J. Haug|GaAs/AlGaAs|300|%|0.3269230769230769|In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAsquantum well we observe a strong magnetoresistance.|In lowering the electrondensity the magnetoresistance gets more pronounced and reaches values of morethan 300%.
The Effect of Dopants on the Magnetoresistance of WTe2|Steven Flynn,Mazhar Ali,R. J. Cava|WTe2|1|%|0.5|Here, Mo, Re, and Ta doped WTe2 are compared to determine whether isovalent andaliovalent substitutions have different effects on the large magnetoresistance.|By 1% substitution, isoelectronic doping reduces the magnetoresistance by afactor of 1.2 with an apparent linear trend, whereas aliovalent doping reducesthe effect by over an order of magnitude while following a higher-order decay.
Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$|Kefeng Wang,C. Petrovic|SrZnSb2|300|%|0.5416666666666666|We report the large linear magnetoresistance (sim 300% in 9 T field at 2K) and magnetothermopower in layered SrZnSb2 crystal withquasi-two-dimensional Sb layers.|We report the large linear magnetoresistance (sim 300% in 9 T field at 2K) and magnetothermopower in layered SrZnSb2 crystal withquasi-two-dimensional Sb layers.
Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan|FeRh|20|%|1.0|The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.|The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.
Negative Magnetoresistance in Dirac Semimetal Cd3As2|Hui Li,Hongtao He,Hai-Zhou Lu,Huachen Zhang,Hongchao Liu,Rong Ma,Zhiyong Fan,Shun-Qing Shen,Jiannong Wang|Cd3As2|66|%|1.0|Here, we report theobservation of the negative magnetoresistance in Cd3As2 microribbons in theparallel magnetic and electric field configuration as large as 66% at 50 K andeven visible at room temperatures.|Here, we report theobservation of the negative magnetoresistance in Cd3As2 microribbons in theparallel magnetic and electric field configuration as large as 66% at 50 K andeven visible at room temperatures.
Negative Magnetoresistance in Dirac Semimetal Cd3As2|Hui Li,Hongtao He,Hai-Zhou Lu,Huachen Zhang,Hongchao Liu,Rong Ma,Zhiyong Fan,Shun-Qing Shen,Jiannong Wang|Cd3As2|1670|%|0.16666666666666666|We have found that carrierdensities of our Cd3As2 samples obey an Arrheniuss<missing VAR> law, decreasing from3.0x<missing VAR>1017 cm-3 at 300 K to 2.2x1016 cm-3 below 50 K.|Furthermore, in the perpendicular magnetic and electric fieldconfiguration a positive non-saturating linear magnetoresistance up to 1670% at14 T<missing VAR> and 2 K is also observed.
Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals|Yanfei Zhao,Haiwen Liu,Jiaqiang Yan,Wei An,Jun Liu,Xi Zhang,Hua Jiang,Qing Li,Yong Wang,Xin-Zheng Li,David Mandrus,X. C. Xie,Minghu Pan,Jian Wang|WTe2|1200|%|1.0|Surprisingly, when the applied field is parallel to the tungsten chains ofWTe2, an exotic large longitudinal linear magnetoresistance as high as 1200% at15 T<missing VAR> and 2 K is identified.|Surprisingly, when the applied field is parallel to the tungsten chains ofWTe2, an exotic large longitudinal linear magnetoresistance as high as 1200% at15 T<missing VAR> and 2 K is identified.
Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device|Martin Oltscher,Franz Eberle,Thomas Kuczmik,Andreas Bayer,Dieter Schuh,Dominique Bougeard,Mariusz Ciorga,Dieter Weiss|SC|80|%|0.47368421052631576|The large magnetoresistance is due to finite electric field effects at theFM<missing VAR>/SC interface, which boost spin-to-charge conversion.|Here, we show both, a large two terminalmagnetoresistance in lateral 2DES-based spin valve geometry, with up to 80%resistance change, and tunability of the magnetoresistance by an electric gate.
Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires|Biplab Bhattacharyya,Bahadur Singh,R. P. Aloysius,Reena Yadav,Chenliang Su,Hsin Lin,S. Auluck,Anurag Gupta,T. D. Senguttuvan,Sudhir Husale|Bi2Te3|-22|%|0.175|Here, we report an experimentalobservation of the temperature dependent negative magnetoresistance in Bi2Te3topological insulator (T<missing VAR>I) nanowires at ultralow temperatures (20 m<missing VAR>K).|We observe a large negativemagnetoresistance which reaches -22% at 8T.
The magnetoresistance in GdNi: Magnetic-polaronic-like effect near Curie temperature and low temperature sign reversal|R. Mallik,E. V. Sampathkumaran,P. L. Paulose,V. Nagarajan|GdNi|-20|%|0.03225806451612903|The results of magnetoresistance (Delta rho /rho)measurements in GdNi,in the temperature range 4.2 to 300 K are reported.|The sign of Delta rho/rho  above the Curie temperature (Tc 70 K) is negative and its magnitude ina magnetic field of 80kOe grows with decreasing temperature below 150 K with apeak value of about -20% at Tc.
Unconventional magnetoresistance in long InSb nanowires|S. V. Zaitsev-Zotov,Yu. A. Kumzerov,Yu. A. Firsov,P. Monceau|InSb|20|%|0.03435114503816794|Magnetoresistance in long correlated nanowires of degenerate semiconductorInSb in asbestos matrix (wire diameter of around 5 nm, length 0.1 - 1 mm) isstudied over temperature range 2.3 - 300 K.|The effect of magnetic field corresponds to a20% growth of the exponents alpha, beta at H10 T<missing VAR>.
Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das|O/NS|150|%|1.0|The LSMO/NSM<missing VAR>Omultilayers with ultra thin individual layers of thickness of about 10AAexhibits 150% magnetoresistance at 270 K whereas LSMO/NSM<missing VAR>O multilayers withmoderate individual layer thickness of about 40AA each exhibits a mere 15%magnetoresistance at the same temperature.|The LSMO/NSM<missing VAR>Omultilayers with ultra thin individual layers of thickness of about 10AAexhibits 150% magnetoresistance at 270 K whereas LSMO/NSM<missing VAR>O multilayers withmoderate individual layer thickness of about 40AA each exhibits a mere 15%magnetoresistance at the same temperature.
Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das|O/NS|15|%|0.9393939393939394|The LSMO/NSM<missing VAR>Omultilayers with ultra thin individual layers of thickness of about 10AAexhibits 150% magnetoresistance at 270 K whereas LSMO/NSM<missing VAR>O multilayers withmoderate individual layer thickness of about 40AA each exhibits a mere 15%magnetoresistance at the same temperature.|The LSMO/NSM<missing VAR>Omultilayers with ultra thin individual layers of thickness of about 10AAexhibits 150% magnetoresistance at 270 K whereas LSMO/NSM<missing VAR>O multilayers withmoderate individual layer thickness of about 40AA each exhibits a mere 15%magnetoresistance at the same temperature.
Influence of length and measurement geometry on magnetoimpedance in La0.7Sr0.3MnO3|A. Rebello,R. Mahendiran|La0.7Sr0.3MnO3|47|%|0.45454545454545453|We show that ac magnetoresistance at room temperature in La0.7Sr0.3MnO3 isextremely high ( 47% in H  100 mT, f<missing VAR>  3-5 M<missing VAR>Hz), and magnetic fielddependence of reactance exhibits a double peak behavior.|We show that ac magnetoresistance at room temperature in La0.7Sr0.3MnO3 isextremely high ( 47% in H  100 mT, f<missing VAR>  3-5 M<missing VAR>Hz), and magnetic fielddependence of reactance exhibits a double peak behavior.
Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As|R. R. Gareev,A. Petukhov,M. Schlapps,M. Doeppe,J. Sadowski,M. Sperl,W. Wegscheider|Tc90K|50|%|0.04583333333333333|MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc90K demonstratetransition from metallic to insulating state below To10K, where sheetresistances Rshh/e2 and both longitudinal Rxx and transverse Rxy componentsbecome comparable.|Below metal-insulator transition we found giant anisotropicmagnetoresistance (GAMR), which depends on orientation of magnetization tocrystallographic axes and manifests itself in positive magnetoresistance near50% for Rxx at T<missing VAR>1.7K, H//[110] crystallographic direction and parallel tocurrent in contrast to smaller and negative magnetoresistance for H//direction.
Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang|MgO|60|%|0.35333333333333333|The Vhalf, biasvoltage at which tunneling magnetoresistance drops to half of the zero-biasvalue, is found to be about 1V, which is substantially higher than that ofMgO-based junctions.|Anenhanced magnetoresistance of 60% has also been achieved.
Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami|(H)|1200|%|1.0|Such DeltarhoT<missing VAR>(H)/rhoT<missing VAR>(0),reaching 1200% in favorable cases, was found to be much stronger for the AM<missing VAR>2B2compounds and to decrease with temperature as well as when Ca is replaced bySr, or Rh is replaced by Ir.|Such DeltarhoT<missing VAR>(H)/rhoT<missing VAR>(0),reaching 1200% in favorable cases, was found to be much stronger for the AM<missing VAR>2B2compounds and to decrease with temperature as well as when Ca is replaced bySr, or Rh is replaced by Ir.
Giant negative magnetoresistance driven by spin-orbit coupling at the LAO/STO interface|M. Diez,A. M. R. V. L. Monteiro,G. Mattoni,E. Cobanera,T. Hyart,E. Mulazimoglu,N. Bovenzi,C. W. J. Beenakker,A. D. Caviglia|O/S|70|%|0.4859154929577465|The L<missing VAR>AO/ST<missing VAR>O interface hosts a two-dimensional electron system that isunusually sensitive to the application of an in-plane magnetic field.|Low-temperature experiments have revealed a giant negative magnetoresistance(dropping by 70%), attributed to a magnetic-field induced transition betweeninteracting phases of conduction electrons with Kondo-screened magneticimpurities.
Drastic pressure effect on the extremely large magnetoresistance in WTe2: quantum oscillation study|P. L. Cai,J. Hu,L. P. He,J. Pan,X. C. Hong,Z. Zhang,J. Zhang,J. Wei,Z. Q. Mao,S. Y. Li|WTe2|5|%|0.14285714285714285|These results supportthe scenario that the perfect balance between the electron and hole populationsis the origin of the extremely large magnetoresistance in WTe2.|At 0.3 K and in 14.5T<missing VAR>, the magnetoresistance decreases drastically from 1.25 times 105%under ambient pressure to 7.47 times 103% under 23.6 kbar, which islikely caused by the relative change of Fermi surfaces.
Drastic pressure effect on the extremely large magnetoresistance in WTe2: quantum oscillation study|P. L. Cai,J. Hu,L. P. He,J. Pan,X. C. Hong,Z. Zhang,J. Zhang,J. Wei,Z. Q. Mao,S. Y. Li|WTe2|3|%|0.2777777777777778|These results supportthe scenario that the perfect balance between the electron and hole populationsis the origin of the extremely large magnetoresistance in WTe2.|At 0.3 K and in 14.5T<missing VAR>, the magnetoresistance decreases drastically from 1.25 times 105%under ambient pressure to 7.47 times 103% under 23.6 kbar, which islikely caused by the relative change of Fermi surfaces.
Change in the order of magnetic transition in HoRhGe as probed by magnetoresistance and magnetocaloric studies|Sachin B. Gupta,K. G. Suresh,A. K. Nigam|HoRhGe|25|%|0.022058823529411766|Magnetoresistance and magnetocaloric properties of polycrystalline HoRhGehave been studied.|It shows a large negative magnetoresistance of 25% at T<missing VAR>N, for a fieldof 50 kOe.
Change in the order of magnetic transition in HoRhGe as probed by magnetoresistance and magnetocaloric studies|Sachin B. Gupta,K. G. Suresh,A. K. Nigam|HoRhGe|12|%|0.0703125|Magnetoresistance and magnetocaloric properties of polycrystalline HoRhGehave been studied.|However, at 2 K and in lower fields, the magnetoresistance is foundto be positive with a magnitude of about 12%, which is attributed to the firstorder metamagnetic transition.
Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2|Hui Li,Huanwen Wang,Hongtao He,Jiannong Wang,Shun-Qing Shen|Cd3As2|-68|%|0.5|Here, we report experimental observations in the Diracsemimetal Cd3As2 of giant anisotropic magnetoresistance and its transverseversion, called the planar Hall effect.|The relative anisotropicmagnetoresistance is negative and up to -68% at 2 K and 10 T.
Large positive magnetoresistance in photocarrier doping potassium tantalites in the extreme quantum limit|Ruishu Yang,Dingbang Wang,Yang Zhao,Shuanhu Wang,Kexin Jin|KTaO3|433|%|1.0|When cooled down to 10 K andsubjected to a magnetic field of 12 T, the value of magnetoresistance of KTaO3(100) is increased by as much as 433%.|When cooled down to 10 K andsubjected to a magnetic field of 12 T, the value of magnetoresistance of KTaO3(100) is increased by as much as 433%.
Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao|MgO|64|%|0.38636363636363635|We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgObuffered Si (100).|Tunnel magnetoresistance reached up to 64% at 4.2 K.
Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii|SiO2(Co)|4|%|1.0|On the contrary, for SiO2(Co)/Si heterostructuresmagnetoresistance values are very small (4%) and for SiO2(Co) films themagnetoresistance has an opposite value.|On the contrary, for SiO2(Co)/Si heterostructuresmagnetoresistance values are very small (4%) and for SiO2(Co) films themagnetoresistance has an opposite value.
Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran|EuTiO3|1|%|0.23076923076923078|EuTiO3 is an insulator at 2.5 K and 1% La3substitution for Eu2 lowers the resistivity over five orders of magnitude at2.5 K.|EuTiO3 is an insulator at 2.5 K and 1% La3substitution for Eu2 lowers the resistivity over five orders of magnitude at2.5 K.
Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar|Ni80Fe20|2.5|%|1.0|Theresistance measurement shows a reduction of 2.5% for the bilayer specimen ascompared to 1.3% for Ni80Fe20 (50 nm) on oxide specimen for an out-of-planeapplied magnetic field of 3T.|Theresistance measurement shows a reduction of 2.5% for the bilayer specimen ascompared to 1.3% for Ni80Fe20 (50 nm) on oxide specimen for an out-of-planeapplied magnetic field of 3T.
Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar|Ni80Fe20|1.3|%|1.0|Theresistance measurement shows a reduction of 2.5% for the bilayer specimen ascompared to 1.3% for Ni80Fe20 (50 nm) on oxide specimen for an out-of-planeapplied magnetic field of 3T.|Theresistance measurement shows a reduction of 2.5% for the bilayer specimen ascompared to 1.3% for Ni80Fe20 (50 nm) on oxide specimen for an out-of-planeapplied magnetic field of 3T.
Negative longitudinal magnetoresistance as a sign of a possible chiral magnetic anomaly in the half-Heusler antiferromagnet DyPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Piotr Wiśniewski|DyPdBi|-80|%|0.35|Magnetoresistance (MR) of single crystals of DyPdBi is very pronounced.|Inmagnetic field longitudinal to electrical current direction it reaches -80% andits relative difference with respect to that measured in transverse field(expressed as anisotropic magnetoresistance) is extremely strong -60% at 10Kand 14 T.
Negative longitudinal magnetoresistance as a sign of a possible chiral magnetic anomaly in the half-Heusler antiferromagnet DyPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Piotr Wiśniewski|DyPdBi|-60|%|0.5|The planar Hall effect in DyPdBi depends on temperature and magneticfield in non-monotonous way, which has not been previously reported.|Inmagnetic field longitudinal to electrical current direction it reaches -80% andits relative difference with respect to that measured in transverse field(expressed as anisotropic magnetoresistance) is extremely strong -60% at 10Kand 14 T.
Huge magnetoresistance and ultra-sharp metamagnetic transition in polycrystalline ${Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3}$|Sanjib Banik,Kalipada Das,Tapas Paramanik,N. P. Lalla,Biswarup Satpati,Kalpataru Pradhan,I. Das|Sm0.5Ca0.25Sr0.25MnO3|13|%|0.5|In thiswork, we report a huge colossal magnetoresistance along with the ultra-sharpmetamagnetic transition in half doped Sm0.5Ca0.25Sr0.25MnO3manganite compound by suitably tuning the volume fraction of the competingphases.|The obtained magnetoresistance value at 10 K is as large assim1013% in a 30 kOe external magnetic field and sim1015% in 90k<missing VAR>Oe external magnetic field and is several orders of magnitude higher than anyother observed magnetoresistance value reported so far.
Huge magnetoresistance and ultra-sharp metamagnetic transition in polycrystalline ${Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3}$|Sanjib Banik,Kalipada Das,Tapas Paramanik,N. P. Lalla,Biswarup Satpati,Kalpataru Pradhan,I. Das|Sm0.5Ca0.25Sr0.25MnO3|15|%|0.5|In thiswork, we report a huge colossal magnetoresistance along with the ultra-sharpmetamagnetic transition in half doped Sm0.5Ca0.25Sr0.25MnO3manganite compound by suitably tuning the volume fraction of the competingphases.|The obtained magnetoresistance value at 10 K is as large assim1013% in a 30 kOe external magnetic field and sim1015% in 90k<missing VAR>Oe external magnetic field and is several orders of magnitude higher than anyother observed magnetoresistance value reported so far.
Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin|MnAs|-32|%|0.006944444444444444|The presence of MnAs clusters induces inthe studied alloy room temperature ferromagnetism with the Curie temperature,T<missing VAR>C, around 305 K.|The negativemagnetoresistance present in the samples with x<missing VAR>  0.85 is observed attemperatures T<missing VAR> < 25 K with maximum values of about -32% at T<missing VAR>  1.4 K and B  13T<missing VAR>, strongly depending on the Mn content, y<missing VAR>.
Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin|MnAs|50|%|0.0017421602787456446|The presence of MnAs clusters induces inthe studied alloy room temperature ferromagnetism with the Curie temperature,T<missing VAR>C, around 305 K.|The positive magnetoresistancepresent in the samples with x<missing VAR>  0.12 is observed with maximum values notexceeding 50% at B 13 T<missing VAR> and T<missing VAR>  4.3 K, changing with the Mn content, y<missing VAR>.
Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki|GdPt|15|%|0.2|Rutherford backscattering spectrometry (R<missing VAR>BS) and x<missing VAR>-raydiffraction measurements suggest that phase pure GdPtx<missing VAR>Sb films canaccommodate up to 15% Pt vacancies (x<missing VAR>0.85), which act as acceptors asmeasured by Hall effect.|Rutherford backscattering spectrometry (R<missing VAR>BS) and x<missing VAR>-raydiffraction measurements suggest that phase pure GdPtx<missing VAR>Sb films canaccommodate up to 15% Pt vacancies (x<missing VAR>0.85), which act as acceptors asmeasured by Hall effect.
Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,P. L. Paulose|(Tc)|30|%|0.03900709219858156|The results establish thatthese compounds undergo long-range magnetic ordering (presumably with a complexmagnetic structure) below (Tc) 23 and 8 K respectively.|The magnitude of magnetoresistance at lowtemperatures is quite large, for instance, about 30% in the presence of 60 kOefield at 5 K in the Dy sample.
Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,V. N. Neverov,O. A. Kuznetsov|Ge1-xSi|-40|%|0.868421052631579|A negative magnetoresistance under the in-plane magnetic field, reachingmaximum 30-40% of its zero-field value in fields higher than 12 T<missing VAR>, has beenfound in wide Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum wells (Q<missing VAR>W) containing thequasi-two-dimensional hole gas.|A negative magnetoresistance under the in-plane magnetic field, reachingmaximum 30-40% of its zero-field value in fields higher than 12 T<missing VAR>, has beenfound in wide Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum wells (Q<missing VAR>W) containing thequasi-two-dimensional hole gas.
Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki|Zn1-xMn|7|%|0.8|Effects of spin-orbit coupling and s-d exchange interaction are probed bymagnetoresistance measurements carried out down to 50 mK on ZnO andZn1-xMnx<missing VAR>O with x<missing VAR>  3 and 7%.|Effects of spin-orbit coupling and s-d exchange interaction are probed bymagnetoresistance measurements carried out down to 50 mK on ZnO andZn1-xMnx<missing VAR>O with x<missing VAR>  3 and 7%.
Spin injection into a short DNA chain|X. F. Wang,Tapash Chakraborty|(C)|10|%|0.8421052631578947|For ferromagnetic ironelectrodes, the magnetoresistance of a 30-basepair Poly(G)-Poly(C) D<missing VAR>NA is foundto be lower than 10% at a bias of < 4 V, but can rach up to 20% at a bias of 5V.|For ferromagnetic ironelectrodes, the magnetoresistance of a 30-basepair Poly(G)-Poly(C) D<missing VAR>NA is foundto be lower than 10% at a bias of < 4 V, but can rach up to 20% at a bias of 5V.
Spin injection into a short DNA chain|X. F. Wang,Tapash Chakraborty|(C)|20|%|0.3181818181818182|For ferromagnetic ironelectrodes, the magnetoresistance of a 30-basepair Poly(G)-Poly(C) D<missing VAR>NA is foundto be lower than 10% at a bias of < 4 V, but can rach up to 20% at a bias of 5V.|For ferromagnetic ironelectrodes, the magnetoresistance of a 30-basepair Poly(G)-Poly(C) D<missing VAR>NA is foundto be lower than 10% at a bias of < 4 V, but can rach up to 20% at a bias of 5V.
Strong spin-orbit interactions and weak antilocalization in carbon doped p-type GaAs heterostructures|Boris Grbic,Renaud Leturcq,Thomas Ihn,Klaus Ensslin,Dirk Reuter,Andreas D. Wieck|GaAs/AlGaAs|30|%|0.25|We present a comprehensive study of the low-field magnetoresistance in carbondoped p<missing VAR>-type GaAs/AlGaAs heterostructures aiming at the investigation ofspin-orbit interaction effects.|The spin-orbit induced splitting of the heavy holesubband at the Fermi level is determined to be around 30% of the total Fermienergy.
Magnetodielectric behavior in La2CoMnO6 nanoparticles|J. Krishna Murthy,A. Venimadhav|La2CoMnO6|10|%|0.5|Magnetization measurementsrevealed two distinct ferromagnetic transitions at 218 K and 135 K that can beassigned to ordered and disordered magnetic phases of the La2CoMnO6nanoparticles.|Two dielectric relaxations culminating around the magnetictransitions were observed with a maximum magnetodielectric response reaching10% and 8% at the respective relaxation peaks measured at 100 kHz under 5Tmagnetic field.
Magnetodielectric behavior in La2CoMnO6 nanoparticles|J. Krishna Murthy,A. Venimadhav|La2CoMnO6|8|%|0.5|Magnetization measurementsrevealed two distinct ferromagnetic transitions at 218 K and 135 K that can beassigned to ordered and disordered magnetic phases of the La2CoMnO6nanoparticles.|Two dielectric relaxations culminating around the magnetictransitions were observed with a maximum magnetodielectric response reaching10% and 8% at the respective relaxation peaks measured at 100 kHz under 5Tmagnetic field.
Two dimensional Dirac fermions and quantum magnetoresistance in CaMnBi$_2$|Kefeng Wang D. Graf,Limin Wang,Hechang Lei,S. W. Tozer,C. Petrovic|CaMnBi2|120|%|0.05555555555555555|Ourresults demonstrate the existence of two dimensional Dirac fermions inCaMnBi2 with Bi square nets.|The in-plane transverse magnetoresistanceexhibits a crossover at a critical field B from semiclassical weak-fieldB2 dependence to the high-field unsaturated linear magnetoresistance (sim120% in 9 T at 2 K) due to the quantum limit of the Dirac fermions.
Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$|A. T. Wong,C. Beekman,H. Guo,W. Siemons,Z. Gai,E. Arenholz,Y. Takamura,T. Z. Ward|MnO3|8|%|0.5|We investigate the effects of strain on antiferromagntic (AFM) single crystalthin films of La1-xSrx<missing VAR>MnO3 (x<missing VAR>  0.6).|Nominally unstrainedsamples have strong magnetoresistance with anisotropic magnetoresistances (AMR)of up to 8%.
Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$|A. T. Wong,C. Beekman,H. Guo,W. Siemons,Z. Gai,E. Arenholz,Y. Takamura,T. Z. Ward|MnO3|63|%|0.15492957746478872|We investigate the effects of strain on antiferromagntic (AFM) single crystalthin films of La1-xSrx<missing VAR>MnO3 (x<missing VAR>  0.6).|Compressive strain suppresses magnetoresistance but generates AMRvalues of up to 63%.
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao|MgO/CoFeB|249|%|0.4148936170212766|mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.|Here, we report spin transfer torque switching in nano-scaleperpendicular magnetic tunnel junctions with a magnetoresistance ratio up to249% and a resistance area product as low as 7.0 Omega.
Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito|MoS2|45|%|1.0|We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.|We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.
Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito|MoS2|300|%|0.1076388888888889|We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.|For junctions of greater thickness a maximum magnetoresistance of sim300%is obtained, which remains robust with the applied bias as long as transport isin the tunneling limit.
Large linear magnetoresistance in a transition-metal stannide $β$-RhSn$_4$|X. Z. Xing,C. Q. Xu,N. Zhou,B. Li,Jinglei Zhang,Z. X. Shi,Xiaofeng Xu|RhSn4|600|%|1.0|Here we demonstrate a large linear-in-fieldmagnetoresistance, Delta rho/rho reaching as high as sim600% at 2 Kunder a 9 Tesla field, in the tetragonal phase of a transiton-metal stannidebeta-RhSn4.|Here we demonstrate a large linear-in-fieldmagnetoresistance, Delta rho/rho reaching as high as sim600% at 2 Kunder a 9 Tesla field, in the tetragonal phase of a transiton-metal stannidebeta-RhSn4.
Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss|MgO|135|%|0.00851063829787234|Theantiferromagnet Ru2MnGe is used to pin the magnetization direction of aferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistancestacks.|We find a sizeable maximummagnetoresistance value of 135%, which is comparable to other common Fe basedMTJ systems.
Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang|EuAg4As2|202|%|1.0|Forboth textitH parallel textitab and textitH paralleltextitc<missing VAR>, EuAg4As2 shows a positive, unexpected largemagnetoresistance (up to 202%) at low fields below 10 K, and a large negativemagnetoresistance (up to -78%) at high fields/intermediate temperatures.|Forboth textitH parallel textitab and textitH paralleltextitc<missing VAR>, EuAg4As2 shows a positive, unexpected largemagnetoresistance (up to 202%) at low fields below 10 K, and a large negativemagnetoresistance (up to -78%) at high fields/intermediate temperatures.
Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang|EuAg4As2|-78|%|1.0|Forboth textitH parallel textitab and textitH paralleltextitc<missing VAR>, EuAg4As2 shows a positive, unexpected largemagnetoresistance (up to 202%) at low fields below 10 K, and a large negativemagnetoresistance (up to -78%) at high fields/intermediate temperatures.|Forboth textitH parallel textitab and textitH paralleltextitc<missing VAR>, EuAg4As2 shows a positive, unexpected largemagnetoresistance (up to 202%) at low fields below 10 K, and a large negativemagnetoresistance (up to -78%) at high fields/intermediate temperatures.
A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella|TbCo|0.02|%|0.75|We further show that the giant magnetoresistance ofdevices including a single TbCo/spacer/Co trilayer can be improved from 0.02%to 6% by using a Cu spacer instead of Pt.|We further show that the giant magnetoresistance ofdevices including a single TbCo/spacer/Co trilayer can be improved from 0.02%to 6% by using a Cu spacer instead of Pt.
A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella|TbCo|6|%|0.4090909090909091|We further show that the giant magnetoresistance ofdevices including a single TbCo/spacer/Co trilayer can be improved from 0.02%to 6% by using a Cu spacer instead of Pt.|We further show that the giant magnetoresistance ofdevices including a single TbCo/spacer/Co trilayer can be improved from 0.02%to 6% by using a Cu spacer instead of Pt.
Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang|MgO|200|%|0.6363636363636364|In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.|In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.
Giant Magnetoresistance by Exchange Springs in DyFe$_2$/YFe$_2$ Superlattices|S. N. Gordeev,J-M. L. Beaujour,G. J. Bowden,P. A. J. de Groot,B. D. Rainford,R. C. C. Ward,M. R . Wells,A. G. M. Jansen|YFe2|32|%|1.0|We demonstrate that the formation of short exchange springs ( 2 nm) in themagnetically soft YFe2 layers results in a giant magneto-resistance as highas 32% in the spring region.|We demonstrate that the formation of short exchange springs ( 2 nm) in themagnetically soft YFe2 layers results in a giant magneto-resistance as highas 32% in the spring region.
High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda|(H)|16.5|%|0.09375|The magnetic properties of perovskite CaVO3 single crystals have been studiedby means of magnetoresistance r(T, H) and magnetization M<missing VAR>(H) measurements infields to 18T.|At 2 K, the magnetoresistance is positive and a maximum value ofDr(18T)/r<missing VAR>(0)  16.5% is found for H//a.
Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen|PS|51|%|0.5|The X<missing VAR>PSmeasurement suggests that Te ions are in the Teup4 state, while Mn ionsmay be in the 2 and 3 valence state.|Themagnetoresistance ratio is about 51% at 200 K in a field of 4 T.
Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2xEux)(Ca0.3Srx)MnO3 (0.05<x<0.15)|D. S. Rana,C. M. Thaker,K. R. Mavani,D. G. Kuberkar,S. K. Malik|MnO3|98|%|0.19318181818181818|c) measurements have beencarried out on the manganites, (La0.7-2x<missing VAR>Eux)(Ca0.3Srx)MnO3 (0.05<x<missing VAR><0.15), inthe temperature range of 5K-320K.|At 5K, an unusually large MR of almost 98% isobserved in the x<missing VAR>0.15 sample, nearly up to fields of 4-5 Tesla.
Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp|CoFe|8.7|%|0.5|We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layersystem consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer.|The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at roomtemperature which increases to 14.7% at 4.2K.
Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp|CoFe|14.7|%|0.5|We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layersystem consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer.|The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at roomtemperature which increases to 14.7% at 4.2K.
Giant Magnetoresistance in an all-oxide spacerless junction|Mangala Prasad Singh,Baptiste Carvello,Laurent Ranno|Fe3O4|-5|%|0.5|the Fe3O4 layer has a negative spinpolarization at low temperature.|Maximum GMR (-5%) is obtained at 55K.
High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne|MgO|185|%|0.07282913165266106|This demonstrates a pure spindependent direct tunneling mechanism and validates the high structural qualityof the MgO barrier.|The junctionsshow large tunnel magnetoresistance (185% at 300K and 330% at 4K).
High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne|MgO|330|%|0.07807807807807807|This demonstrates a pure spindependent direct tunneling mechanism and validates the high structural qualityof the MgO barrier.|The junctionsshow large tunnel magnetoresistance (185% at 300K and 330% at 4K).
Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal|YBCO|72000|%|0.0019409937888198758|I have successfully prepared (110) trilayers of LSMO-YBCO-LSMO.|I have also measured theanisotropic magnetoresistance (AMR) of these samples revealing an unusuallyhigh AMR (sim 72000%).
Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts|Arndt von Bieren,Ajit K. Patra,Stephen Krzyk,Jan Rhensius,Robert M. Reeve,Laura J. Heyderman,Regina Hoffmann-Vogel,Mathias Kläui|UHV|50|%|0.0625|We determine magnetoresistance effects in stable and clean permalloynanocontacts of variable cross-section, fabricated by UHV deposition andin-situ electromigration.|In the ballistic transportregime, the MR ratio reaches up to 50% and exhibits a previously unobservedsign change.
Giant magnetothermopower in charge ordered Nd0.75Na0.25MnO3|D. V. Maheswar Repaka,R. Mahendiran|Nd0.75Na0.25MnO3|-100|%|0.4|We report magnetization, resistivity and thermopower in the charge-orbitalordered antiferromagnet Nd0.75Na0.25MnO3.|Magnetic-field induced collapse ofantiferromagnetism is found to be accompanied by a giant negativemagnetothermopower ( 80-100% for a field change of 5T) over a wide temperature(T<missing VAR>  60-225K) and giant magnetoresistance.
Six-fold crystalline anisotropic magnetoresistance in the (111) LaAlO$_3$/SrTiO$_3$ oxide interface|P. K. Rout,I. Agireen,E. Maniv,M. Goldstein,Y. Dagan|LaAlO3/SrTiO3|15|%|0.25|We measured the magnetoresistance of the 2D electron liquid formed at the(111) LaAlO3/SrTiO3 interface.|The six-fold component increases with carrierconcentration, reaching 15% of the total AMR signal.
Quantum linear magnetoresistance in NbTe2|Hongxiang Chen,Zhilin Li,Xiao Fan,Liwei Guo,Xiaolong Chen|NbTe2|30|%|0.5|Here we report theanisotropic magneto-transport properties of NbTe2.|An anomalous linearmagnetoresistance up to 30% at 3 K in 9 T was observed, which can be wellexplained by quantum linear magnetoresistance model.
Coexistence of surface and bulk state and negative magnetoresistance in Sulfur doped Bi2Se3|Rahul Singh,Vinod K. Gangwar,D. D. Daga,Mahima Singh,A. K. Ghosh,Manoranjan Kumar,A. Lakhani,Rajeev Singh,Sandip Chatterjee|Bi2Se3|7|%|0.14285714285714285|The magneto-transport properties in Sulfur doped Bi2Se3 are investigated.|Themagnetoresistance (MR) decreases with increase of S content and finally for 7%(i.e.
Enhanced spin-orbit coupling in a heavy metal via molecular coupling|Satam Alotibi,B. J. Hickey,Gilberto Teobaldi,Mannan Ali,Joseph Barker,Quentin Ramasse,Gavin Burnell,Mohammed Alyami,Timothy Moorsom,Oscar Cespedes|YI|600|%|0.8636363636363636|When C60 is deposited on Pt, the molecular interface is metallised and the spinHall angle in YIG<missing VAR>/Pt increased, leading to an enhancement of up to 600% in thespin Hall magnetoresistance and 700% for the anisotropic magnetoresistance.|When C60 is deposited on Pt, the molecular interface is metallised and the spinHall angle in YIG<missing VAR>/Pt increased, leading to an enhancement of up to 600% in thespin Hall magnetoresistance and 700% for the anisotropic magnetoresistance.
Enhanced spin-orbit coupling in a heavy metal via molecular coupling|Satam Alotibi,B. J. Hickey,Gilberto Teobaldi,Mannan Ali,Joseph Barker,Quentin Ramasse,Gavin Burnell,Mohammed Alyami,Timothy Moorsom,Oscar Cespedes|YI|700|%|0.9210526315789473|When C60 is deposited on Pt, the molecular interface is metallised and the spinHall angle in YIG<missing VAR>/Pt increased, leading to an enhancement of up to 600% in thespin Hall magnetoresistance and 700% for the anisotropic magnetoresistance.|When C60 is deposited on Pt, the molecular interface is metallised and the spinHall angle in YIG<missing VAR>/Pt increased, leading to an enhancement of up to 600% in thespin Hall magnetoresistance and 700% for the anisotropic magnetoresistance.
Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik|GdMn2Ge2|22|%|1.0|The magnetoresistance is found to be very largeand positive with a maximum value of about 22% in the case of GdMn2Ge2.|The magnetoresistance is found to be very largeand positive with a maximum value of about 22% in the case of GdMn2Ge2.
Magnetoresistance in multilayer fullerene spin valves: a first-principles study|Deniz Çakır,Diana M. Otálvaro,Geert Brocks|CP|90|%|1.0|A high current polarization (CP > 90%)and magnetoresistance (MR > 100%) at small bias can be attained using C70layers.|A high current polarization (CP > 90%)and magnetoresistance (MR > 100%) at small bias can be attained using C70layers.
Magnetoresistance in multilayer fullerene spin valves: a first-principles study|Deniz Çakır,Diana M. Otálvaro,Geert Brocks|CP|100|%|0.9473684210526315|A high current polarization (CP > 90%)and magnetoresistance (MR > 100%) at small bias can be attained using C70layers.|A high current polarization (CP > 90%)and magnetoresistance (MR > 100%) at small bias can be attained using C70layers.
Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella|YI|0.5|%|0.7142857142857143|Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.|Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.
Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella|YI|0.005|%|0.08196721311475409|The unidirectional SMR isbelow the accuracy of our measurements in YIG<missing VAR>/Pt.|This so-calledunidirectional SMR, of the order of 0.005%, is largest in W and correlates withthe amplitude of the antidamping spin-orbit torque.
Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka|InAs|1|%|0.21875|Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).|Recently,new types of MR have been observed in much simpler bilayers consisting offerromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR inthese materials is very small (0.01  1%).
Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka|InAs|80|%|0.15555555555555556|Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).|Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).
Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide|L. - Y. Fan,F. Tang,W. Z. Meng,W. Zhao,L. Zhang,Z. D. Han,B. Qian,X. -F. Jiang,X. M. Zhang,Y. Fang|ErBi|104|%|0.11486486486486487|Ananalysis of the magnetic entropy and magnetization indicates that the weakmagnetic anisotropy in ErBi possibly derives from the mixing effect, namely theanisotropic ground state of Er3 (4f<missing VAR>11) mingles with the isotropic excitedstate through exchange interaction.|At low temperature, an extremely largemagnetoresistance (104%) with a parabolic magnetic-field dependence isobserved, which can be ascribed to the nearly perfect electron-holecompensation and ultrahigh carrier mobility.
Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü|Te2/Fe3GeTe2|2000|%|0.041237113402061855|Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.|Agiant magnetoresistance of around 2000% and R<missing VAR>A less than 0.3 Omega mum<missing VAR>2have been found in the proposed vdW CPP GMR.
Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü|Fe3GeTe2|20|%|1.0|The calculated AMR is found to be around 20% inFe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR.|The calculated AMR is found to be around 20% inFe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR.
Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$|Peng Cheng,Huan Yang,Ying Jia,Lei Fang,Xiyu Zhu,Gang Mu,Hai-Hu Wen|NdFeAsO1-xF|30|%|0.1556122448979592|Hall effect and magnetoresistance have been measured on single crystals ofNdFeAsO1-xFx<missing VAR> with x<missing VAR>  0 (Tc  0  K) and x<missing VAR>  0.18 (Tc  50 K).|Themagnetoresistance was found to be as large as 30% at 15 K at a magnetic fieldof 9 T.
Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross|SrTiO3|300|%|1.0|The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.|The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.
Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen|(H)|51|%|1.0|The maximummagnetoresistance ratio MR[r<missing VAR>(0)-r<missing VAR>(H)]/r<missing VAR>(0) was about 51% at 200 K and in theapplied magnetic field of 40 kOe.|The maximummagnetoresistance ratio MR[r<missing VAR>(0)-r<missing VAR>(H)]/r<missing VAR>(0) was about 51% at 200 K and in theapplied magnetic field of 40 kOe.
Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik|DyCo2|32|%|1.0|The maximummagnetoresistance is found to about 32% in DyCo2, which decreases with increasein Si.|The maximummagnetoresistance is found to about 32% in DyCo2, which decreases with increasein Si.
Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava|LaAlO3|5|%|0.00835253456221198|Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.|The DLCM<missing VAR>O films exhibit resonable low fieldmagnetoresistance and at 77K the magnetoresistance ratio is  5% at 0.6 kOe and 13% at 3 kOe.
Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava|LaAlO3|13|%|0.01079734219269103|Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.|The DLCM<missing VAR>O films exhibit resonable low fieldmagnetoresistance and at 77K the magnetoresistance ratio is  5% at 0.6 kOe and 13% at 3 kOe.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|355|%|1.0|Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.|Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|578|%|1.0|Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.|Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|27|%|1.0|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|77|%|1.0|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|130|%|1.0|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|165|%|1.0|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Anomalous properties in the low-carrier ordered phase of PrRu4P12: Consequence of hybridization between conduction and Pr 4f electrons|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato|PrRu4P12|93|%|0.030434782608695653|The low-carrier ordered phase below the metal-non-metal transitiontemperature TMI  63 K of PrRu4P12 is explored by probing magnetoresistance,magnetic susceptibility, thermoelectric power, and Hall effect on high qualitysingle crystals.|All the measured properties exhibit the signature ofdecimation of the Fermi surface below TMI and anomalous behaviors below 30 Kincluding a large thermoelectric power -200 u<missing VAR>V/K and a giant negativemagnetoresistance (93% at 0.4 K).
Unravelling the role of the interface for spin injection into organic semiconductors|Clément Barraud,Pierre Seneor,Richard Mattana,Stéphane Fusil,Karim Bouzehouane,Cyrile Deranlot,Patrizio Graziosi,Luis Hueso,Ilaria Bergenti,Valentin Dediu,Frédéric Petroff,Albert Fert|MnO3|300|%|0.6666666666666666|We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.|We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.
Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet|Zn1-x|20|%|0.4444444444444444|The positive magnetoresistance of the Zn1-xCoxO single crystalsincreases with increased Co concentration and reaches up to 20% at lowtemperatures (2.5 K) and high fields (>1 T).|The positive magnetoresistance of the Zn1-xCoxO single crystalsincreases with increased Co concentration and reaches up to 20% at lowtemperatures (2.5 K) and high fields (>1 T).
Multi-band effect in the noncentrosymmetric superconductors Mg_{12-δ}Ir_{19}B_{16} revealed by Hall effect and magnetoresistance measurements|Gang Mu,Huan Yang,Hai-Hu Wen|Ir19B16|20|%|0.16904761904761906|We report the longitudinal resistivity and Hall effect measurements on thenoncentrosymmetric superconducting Mg12-deltaIr19B16 sampleswith different critical transition temperatures.|Moreover, alarge magnetoresistance up to 20% is found at the field of 9 T.
Anomalous scattering in superconducting indium-doped tin telluride|A. S. Erickson,T. H. Geballe,I. R. Fisher,Y. Q. Wu,M. J. Kramer|SnTe|2.7|%|0.5|Susceptibility data indicate the absence of magnetic impurities,while magnetoresistance data are inconsistent with localization effects,leading to the conclusion that indium-doped SnTe is a candidate charge Kondosystem, similar to thallium-doped PbTe.|Intermediate indiumconcentrations 2.7% leq x<missing VAR> leq 3.8% do not exhibit bulk superconductivityabove 0.7 K.
Anomalous scattering in superconducting indium-doped tin telluride|A. S. Erickson,T. H. Geballe,I. R. Fisher,Y. Q. Wu,M. J. Kramer|SnTe|3.8|%|0.5|Susceptibility data indicate the absence of magnetic impurities,while magnetoresistance data are inconsistent with localization effects,leading to the conclusion that indium-doped SnTe is a candidate charge Kondosystem, similar to thallium-doped PbTe.|Intermediate indiumconcentrations 2.7% leq x<missing VAR> leq 3.8% do not exhibit bulk superconductivityabove 0.7 K.
Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin|NiO|-16|%|0.5|We attributethis to the formation of non-collinear spin structures in the NiO layer asobserved by XMCD<missing VAR>.|The magnetoresistance shows a high asymmetry with respect tobias voltage, giving rise to a negative value of -16% at 2.8 K.
Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface|M. A. Aamir,Srijit Goswami,Matthias Baenninger,Vikram Tripathi,Michael Pepper,Ian Farrer,David A. Ritchie,Arindam Ghosh|GaAs/AlGaAs|0|%|0.23333333333333334|We show that a colossal non-saturating linearmagnetoresistance (NLMR) arises in two-dimensional electron systems hosted in aGaAs/AlGaAs heterostructure in the strongly insulating regime.|When operated athigh source-drain bias, the magnetoresistance of our devices increases almostlinearly with magnetic field reaching nearly 10,000% at 8 Tesla, thussurpassing many known non-magnetic materials that exhibit giant NLMR.
From spin-polarized interfaces to giant magnetoresistance in organic spin valves|Deniz Çakır,Diana M. Otálvaro,Geert Brocks|C70Fe|70|%|1.0|The magnetoresistance of a Febilayer-C70Fe spin valve attains ahigh value of 70% in the linear response regime, but it drops sharply as afunction of the applied bias.|The magnetoresistance of a Febilayer-C70Fe spin valve attains ahigh value of 70% in the linear response regime, but it drops sharply as afunction of the applied bias.
From spin-polarized interfaces to giant magnetoresistance in organic spin valves|Deniz Çakır,Diana M. Otálvaro,Geert Brocks|FeC70|80|%|0.5|Both these trendscan be modelled in terms of prominent spin-dependent FeC70 interface statesclose to the Fermi level, unfolding the potential of spinterface science tocontrol and optimize spin currents.|The current polarization has a value of 80% inlinear response, and also decreases as a function of bias.
Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh|Pallavi Kushwaha,Pallab Bag,R. Rawat|Fe49(Rh0.93Pd0.07)51|128|%|1.0|We report room temperature giant baro-resistance (approx128%) inFe49(Rh0.93Pd0.07)51.|We report room temperature giant baro-resistance (approx128%) inFe49(Rh0.93Pd0.07)51.
Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh|Pallavi Kushwaha,Pallab Bag,R. Rawat|Fe49(Rh0.93Pd0.07)51|600|%|0.5|We report room temperature giant baro-resistance (approx128%) inFe49(Rh0.93Pd0.07)51.|With the application of external pressureand magnetic field the temperature range of giant baro-resistance(approx600% at 5K and 19.9 kbar and 8 Tesla) and magnetoresistance(approx-85% at 5K and 8 tesla) can be tuned from 5 K to well above roomtemperature.
Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh|Pallavi Kushwaha,Pallab Bag,R. Rawat|Fe49(Rh0.93Pd0.07)51|-85|%|0.2711864406779661|We report room temperature giant baro-resistance (approx128%) inFe49(Rh0.93Pd0.07)51.|With the application of external pressureand magnetic field the temperature range of giant baro-resistance(approx600% at 5K and 19.9 kbar and 8 Tesla) and magnetoresistance(approx-85% at 5K and 8 tesla) can be tuned from 5 K to well above roomtemperature.
Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh|Pallavi Kushwaha,Pallab Bag,R. Rawat|Fe49(Rh0.93Pd0.07)51|-55|%|0.06954887218045112|We report room temperature giant baro-resistance (approx128%) inFe49(Rh0.93Pd0.07)51.|As the AFM<missing VAR> state is stabilized at room temperature under externalpressure, it shows giant room temperature magnetoresistance (approx-55%)with magnetic field.
Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu|(H)|-38|%|0.8888888888888888|Surprisingly, a colossal negative magnetoresistance, defined as[rho(H)-rho(0)]/rho(0), up to -38% under a low field of mu0H  0.1T<missing VAR> and to -99.8% under mu0H  5 T, was observed at T<missing VAR>  2 K.|Surprisingly, a colossal negative magnetoresistance, defined as[rho(H)-rho(0)]/rho(0), up to -38% under a low field of mu0H  0.1T<missing VAR> and to -99.8% under mu0H  5 T, was observed at T<missing VAR>  2 K.
Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu|(H)|-99.8|%|0.17391304347826086|Surprisingly, a colossal negative magnetoresistance, defined as[rho(H)-rho(0)]/rho(0), up to -38% under a low field of mu0H  0.1T<missing VAR> and to -99.8% under mu0H  5 T, was observed at T<missing VAR>  2 K.|Surprisingly, a colossal negative magnetoresistance, defined as[rho(H)-rho(0)]/rho(0), up to -38% under a low field of mu0H  0.1T<missing VAR> and to -99.8% under mu0H  5 T, was observed at T<missing VAR>  2 K.
Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces|Md. I. Hossain,M. Maksud,N. K. R. Palapati,A. Subramanian,J. Atulasimha,S. Bandyopadhyay|Cu/Au|0|%|0.18181818181818182|In these nanowires,potential barriers form at the two Cu/Au interfaces because of Cu oxidationthat results in an ultrathin copper oxide layer forming between Cu and Au.|We have observed a super-giant (10,000,000%) negative magnetoresistance at39 mT field in Cu nanowires contacted with Au contact pads.
Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta|STiO3|350|%|0.5|Our results show that despite the largenumber of defects in the strontium stannate barrier, due to the large latticemismatch, the observed tunnel magnetoresistance is comparable to tunneljunctions with a better lattice matched STiO3 barrier, reaching values of upto 350% at T<missing VAR>5 K.|Our results show that despite the largenumber of defects in the strontium stannate barrier, due to the large latticemismatch, the observed tunnel magnetoresistance is comparable to tunneljunctions with a better lattice matched STiO3 barrier, reaching values of upto 350% at T<missing VAR>5 K.
Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2|Hongxiang Chen,Zhilin Li,Liwei Guo,Xiaolong Chen|TaTe2|140|%|0.4230769230769231|Here we report the Fermi surfacetopology of low temperature phase of TaTe2 (LT-TaTe2) by anisotropicmagneto-transport and magnetic measurements on high-quality single crystals.|Ananomalous large linear magnetoresistance up to 140% at 3 K in 9 T was observed,suggesting the existence of a small Fermi pocket in Dirac cone state in quantumtransport models.
Magnon Planar Hall Effect and Anisotropic Magnetoresistance in a Magnetic Insulator|J. Liu,L. J. Cornelissen,J. Shan,T. Kuschel,B. J. van Wees|Y3Fe5O12|5|%|0.16666666666666666|Here, we study the analogous anisotropicmagnetotransport behavior for magnons in a magnetic insulatorY3Fe5O12.|(sigmaparalleltextrmm<missing VAR>-sigmaperptextrmm)/sigma0textrmm<missing VAR>, is approximately 5% with the majority of the measured devices showingsigmaperptextrmm<missing VAR>>sigmaparalleltextrmm<missing VAR>.
Large magnetoresistance in type-II Weyl semimetal WP$_2$|Aifeng Wang,D. Graf,Yu Liu,Qianheng Du,Jiabao Zheng,Hechang Lei,C. Petrovic|WP2|300|%|0.171875|We report magnetotransport study on type-II Weyl semimetal WP2 singlecrystals.|Magnetoresistance (MR) exhibits a nonsaturating Hn<missing VAR> fielddependence (14,300% at 2 K and 9 T) whereas systematic violation of Kohlers<missing VAR>rule was observed.
Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu|CrI3|0|%|1.0|Wedemonstrate tunneling magnetoresistance which is drastically enhanced withincreasing CrI3 layer thickness, reaching a record 19,000% for magneticmultilayer structures using four-layer sf-MTJs at low temperatures.|Wedemonstrate tunneling magnetoresistance which is drastically enhanced withincreasing CrI3 layer thickness, reaching a record 19,000% for magneticmultilayer structures using four-layer sf-MTJs at low temperatures.
Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova|CoPtMgOCoPt|175|%|1.0|We find that the magneto-Seebeck ratio of CoPtMgOPtexceeds that of CoPtMgOCoPt for small barrier thicknesses, reaching 175% atroom temperature.|We find that the magneto-Seebeck ratio of CoPtMgOPtexceeds that of CoPtMgOCoPt for small barrier thicknesses, reaching 175% atroom temperature.
Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal|Desheng Wu,Jian Liao,Wei Yi,Xia Wang,Peigang Li,Hongming Weng,Youguo Shi,Yongqing Li,Jianlin Luo,Xi Dai,Zhong Fang|TaAs2|0|%|0.11904761904761904|The measurements ofHall effect and Shubnikov-de Haas oscillations, as well as band structurecalculations suggest that the giant MR originates from the nearly perfectlycompensated electrons and holes in TaAs2.|The quadratic MR can even exceed1,200,000% at B  9 T and T<missing VAR>  2 K, which is one of the largest values amongthose of all known semi-metallic compounds including the very recentlydiscovered WTe2 and NbSb2.
High-field magnetization and magnetoresistance of the $A$-site ordered perovskite oxide CaCu$_{3}$Ti$_{4-x}$Ru$_{x}$O$_{12}$~($0 \le x \le 4$)|T. Kida,R. Kammuri,M. Hagiwara,S. Yoshii,W. Kobayashi,M. Iwakawa,I. Terasaki|CaCu3Ti4-x|-70|%|0.024497487437185928|We have measured high-field magnetization and magnetoresistance ofpolycrystalline samples of the A-site ordered perovskite CaCu3Ti4-xRuxO12 (x<missing VAR>0- 4) utilizing a non-destructive pulsed magnet.|This scenario is qualitatively consistent with a largemagnetoresistance of -70% observed at 4.2 K at 52 T for x<missing VAR>1.5.
Anisotropic giant magnetoresistance in NbSb2|Kefeng Wang,D. Graf,Lijun Li,C. Petrovic|NbSb2|5|%|0.5|Anisotropic giant magnetoresistance in NbSb2.|The extremely large transverse magnetoreistance (the magnetoresistant ratiosim 1.3times105% in 2 K and 9 T field, and 4.3times 106% in 0.4 Kand 32 T field, without saturation), and the metal-semiconductor crossoverinduced by magnetic field, are reported in NbSb2 single crystal withelectric current parallel to the b<missing VAR>-axis.
Anisotropic giant magnetoresistance in NbSb2|Kefeng Wang,D. Graf,Lijun Li,C. Petrovic|NbSb2|6|%|0.9777777777777777|The extremely large transverse magnetoreistance (the magnetoresistant ratiosim 1.3times105% in 2 K and 9 T field, and 4.3times 106% in 0.4 Kand 32 T field, without saturation), and the metal-semiconductor crossoverinduced by magnetic field, are reported in NbSb2 single crystal withelectric current parallel to the b<missing VAR>-axis.|The extremely large transverse magnetoreistance (the magnetoresistant ratiosim 1.3times105% in 2 K and 9 T field, and 4.3times 106% in 0.4 Kand 32 T field, without saturation), and the metal-semiconductor crossoverinduced by magnetic field, are reported in NbSb2 single crystal withelectric current parallel to the b<missing VAR>-axis.
Large linear magnetoresistance in Dirac semi-metal Cd3As2 with Fermi surfaces close to the Dirac points|Junya Feng,Yuan Pang,Desheng Wu,Zhijun Wang,Hongming Weng,Jianqi Li,Xi Dai,Zhong Fang,Youguo Shi,Li Lu|Cd3As2|3100|%|1.0|A positive and linearmagnetoresistance (LMR) as large as 3100% is observed in a magnetic field of 14T<missing VAR>, on high-quality single crystals of Cd3As2 with ultra-low electron densityand large Lande g<missing VAR> factor.|A positive and linearmagnetoresistance (LMR) as large as 3100% is observed in a magnetic field of 14T<missing VAR>, on high-quality single crystals of Cd3As2 with ultra-low electron densityand large Lande g<missing VAR> factor.
Transverse Magnetoresistance of Zn$_{0.9}$Co$_{0.1}$O:Al Thin Films|R. Martínez-Valdez,H. J. Jiménez-González,L. Angelats-Silva,M. Tomar|ZnO|5.5|%|0.3333333333333333|ZnO was alloyedwith Co to a concentration x<missing VAR> of 0.1 and co-doped with a 5.5% wt concentrationof Al.|ZnO was alloyedwith Co to a concentration x<missing VAR> of 0.1 and co-doped with a 5.5% wt concentrationof Al.
Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy|BO|98|%|0.26|Also, about 98% magnetoresistance (MR) andunusually large ( 42%) anisotropic magnetoresistance (AMR) is observed at 50 Kin the same LCMBO (for x<missing VAR>  0.02) thin film.|Also, about 98% magnetoresistance (MR) andunusually large ( 42%) anisotropic magnetoresistance (AMR) is observed at 50 Kin the same LCMBO (for x<missing VAR>  0.02) thin film.
Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy|BO|42|%|1.0|Also, about 98% magnetoresistance (MR) andunusually large ( 42%) anisotropic magnetoresistance (AMR) is observed at 50 Kin the same LCMBO (for x<missing VAR>  0.02) thin film.|Also, about 98% magnetoresistance (MR) andunusually large ( 42%) anisotropic magnetoresistance (AMR) is observed at 50 Kin the same LCMBO (for x<missing VAR>  0.02) thin film.
Large negative magnetoresistance in the new antiferromagnetic rare-earth dichalcogenide EuTe$_2$|Junjie Yin,Changwei Wu,Lisi Li,Jia Yu,Hualei Sun,Bing Shen,Benjamin A. Frandsen,Dao-Xin Yao,Meng Wang|EuTe2|100|%|0.10947712418300654|We report the synthesis and characterization of a rare-earth dichalcogenideEuTe2.|These transitionsare associated with a giant negative magnetoresistance with a value of nearly100%.
Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses|Zdeněk Kašpar,Miloslav Surýnek,Jan Zubáč,Filip Krizek,Vít Novák,Richard P. Campion,Martin S. Wörnle,Pietro Gambardella,Xavier Marti,Petr Němec,K. W. Edmonds,S. Reimers,O. J. Amin,F. Maccherozzi,S. S. Dhesi,Peter Wadley,Jörg Wunderlich,Kamil Olejník,Tomáš Jungwirth|CuMnAs|20|%|0.5|Here we reportreversible and reproducible quenching of an antiferromagnetic CuMnAs film byeither electrical or ultrashort optical pulses into nano-fragmented domainstates.|The resulting resistivity changes approach 20% at room temperature,which is comparable to the giant magnetoresistance ratios in ferromagneticmultilayers.
Giant Positive Magnetoresistance and field-induced metal insulator transition in Cr2NiGa|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar|Cr2NiGa|112|%|0.12149532710280374|We report here the magneto-transport properties of the newly synthesizedHeusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structurebelonging to Pm-3m<missing VAR> space group.|On application of magnetic field, a significantlylarge increase in resistivity is observed which corresponds tomagnetoresistance as high as 112% at 150 kOe of field at the lowesttemperature.
Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves|Robert Göckeritz,Nico Homonnay,Alexander Müller,Bodo Fuhrmann,Georg Schmidt|La0.7Sr0.3MnO3|-70|%|0.8837209302325582|The devices based on an La0.7Sr0.3MnO3/Alq3/Cotrilayer show resistive switching of up to 4-5 orders of magnitude andmagnetoresistance as high as -70% the latter even changing sign when voltagepulses are applied.|The devices based on an La0.7Sr0.3MnO3/Alq3/Cotrilayer show resistive switching of up to 4-5 orders of magnitude andmagnetoresistance as high as -70% the latter even changing sign when voltagepulses are applied.
Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation|Orest Pavlosiuk,Przemysław Swatek,Dariusz Kaczorowski,Piotr Wiśniewski|YBi|0|%|1.0|At low temperatures and in magnetic field of 9T themagnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBiand LuBi, respectively.|At low temperatures and in magnetic field of 9T themagnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBiand LuBi, respectively.
Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation|Orest Pavlosiuk,Przemysław Swatek,Dariusz Kaczorowski,Piotr Wiśniewski|YBi|0|%|1.0|At low temperatures and in magnetic field of 9T themagnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBiand LuBi, respectively.|At low temperatures and in magnetic field of 9T themagnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBiand LuBi, respectively.
Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier|C. I. L. de Araujo,M. A. Tumelero,A. D. C. Viegas,N. Garcia,A. A. Pasa|Si/Al2O3/Ni|75|%|0.5|We present results on the magnetoresistance of the system Ni/Al203/n<missing VAR>-dopedSi/Al2O3/Ni in fabricated nanostructures.|The results at temperature of 14Kreveal a 75% magnetoresistance that decreases in value up to approximately 30Kwhere the effect disappears.
Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal|Zhipeng Hou,Yue Wang,Enke Liu,Hongwei Zhang,Wenhong Wang,Guangheng Wu|ScPtBi|240|%|0.3770491803278688|High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesizedby a Bi self-flux method.|This compound was revealed to be a hole-dominatedsemimetal with a large low-field magnetoresistance up to 240% at 2K in amagnetic field of 1T.
Multi-band superconductivity and large anisotropy in FeS crystals|Hai Lin,Yufeng Li,Qiang Deng,Jie Xing,Jianzhong Liu,Xiyu Zhu,Huan Yang,Hai-Hu Wen|FeSe|290|%|0.015432098765432098|By using a hydrothermal method, we have successfully grown crystals of thenewly discovered superconductor FeS, which has an isostructure of the ironbased superconductor FeSe.|A hugemagnetoresistivity (290% at 9T and 10K, H parallel c<missing VAR>-axis) togetherwith a non-linear behavior of Hall resistivity vs.
Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures|Nguyen Huynh Duy Khang,Pham Nam Hai|GaMnAs|1.1|%|0.1875|Here, wedemonstrate a giant UMR effect in a heterostructure of BiSb topologicalinsulator -- GaMnAs ferromagnetic semiconductor.|We obtained a large UMR ratioof 1.1%, and found that this giant UMR is governed not by the giantmagnetoresistance (GMR)-like spin-dependent scattering, but by magnonemission/absorption and strong spin-disorder scattering in the GaMnAs layer.
Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture|Xueying Zhang,Wenlong Cai,Mengxing Wang,Kaihua Cao,Tianrui Zhang,Houyi Cheng,Shaoxin Li,Daoqian Zhu,Weisheng Zhao|CoFeB/W/CoFeB|200|%|0.5|Here, we experimentally demonstrate a nanoscale spin-torquememristor based on a perpendicular-anisotropy magnetic tunnel junction with aCoFeB/W/CoFeB composite free layer structure.|Its tunneling magnetoresistanceis higher than 200%, and memristive behavior can be realized by spin-transfertorque switching.
Extremely large linear magnetoresistance in Antimony crystal|Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani|(Sb)|43000|%|0.25|In this letter we report the observation of extremely large non-saturatinglinear magnetoresistance (MR) in Antimony(Sb) crystal.|An extremely largemagnetoresistance (XMR) of 43000% at 2K and large unsaturating MRsim 70% atroom temperature is observed at the magnetic field of 9T.
Extremely large linear magnetoresistance in Antimony crystal|Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani|(Sb)|70|%|0.5|In this letter we report the observation of extremely large non-saturatinglinear magnetoresistance (MR) in Antimony(Sb) crystal.|An extremely largemagnetoresistance (XMR) of 43000% at 2K and large unsaturating MRsim 70% atroom temperature is observed at the magnetic field of 9T.
Electrical transport properties of bulk tetragonal CuMnAs|J Volny,D. Wagenknecht,J Zelezny,P Harcuba,E Duverger-Nedellec,R H Colman,J Kudrnovsky,I Turek,K Uhlirova,K Vyborny|CuMnAs|0.12|%|0.1086021505376344|Temperature-dependent resistivity and magnetoresistance are measured in bulktetragonal phase of antiferromagnetic CuMnAs and the latter is found to beanisotropic both due to structure and magnetic order.|Regarding the anisotropicmagnetoresistance (AMR) which reaches a modest magnitude of 0.12%, wephenomenologically employ the Stoner-Wohlfarth model to identifytemperature-dependent magnetic anisotropy of our samples and conclude that thefield-dependence of AMR is more similar to that of antiferromagnets thanferromagnets, suggesting that the origin of AMR is not related to isolated Mnmagnetic moments.
Emergence of Intergranular Tunneling Dominated Negative Magnetoresistance in Helimagnetic Manganese Phosphide Nanorod Thin Films|B. Muchharla,R. P. Madhogaria,D. DeTellem,C. M. Hung,A. Chanda,A. T. Duong,P. T. Huy,M. T. Trinh,S. Cho,S. Witanachchi,M. H. Phan|MnP|12|%|0.10465116279069768|The MnP nanorod films of 100 nm thickness were grown on Si substrates at500 o<missing VAR>C using molecular beam epitaxy.|However, large negative magnetoresistance of up to 12% is observed below 50 Kat which the system enters a stable helical (screw) magnetic state.
Berry-curvature-induced linear magnetotransport in magnetic Weyl semimetals|Zetao Zhang,Yizhou Liu,Wenhui Duan|MnBi2Te4|100|%|0.5|For typical magnetic Weyl semimetals Co3Sn2S2 andferromagnetic MnBi2Te4, Berry curvature induces LMT conductivitiesreaching orders of 104 and 102 rm Omega-1m<missing VAR>-1 per tesla,respectively, which are tunable through magnetization canting induced bymoderate magnetic fields.|We further reveal that Berry-curvature-induced LMTcan be detected by Hall effect and especially intrinsic magnetoresistanceexceeding 100% per tesla insensitive to the sample quality.
Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl$_2$Si$_2$|Sudip Malick,A. B. Sarkar,Antu Laha,M. Anas,V. K. Malik,Amit Agarwal,Z. Hossain,J. Nayak|SrAl2Si2|459|%|0.25|Our Hall resistivity measurements confirm the presenceof two types of charge carriers in SrAl2Si2, with low carrier density.|The maximumvalue of magnetoresistance turns out to be 459% at 2 K and 12 T.
Possible origin of extremely large magnetoresistance in the topological insulator CaBi2 single crystal|Yuzhe Ma,Yulong Wang,Gang Wang|CaBi2|15000|%|0.25|CaBi2 shows a magnetic-field-inducedupturn behavior with a plateau in resistivity at low temperature.|An extremelylarge and non-saturating magnetoresistance up to 15000% at 3 K and 12 T wasachieved.
Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang|Nb/CoFeB/MgO|120|%|0.17553191489361702|An interfacial perpendicular magneticanisotropy energy density of 1.85 mJ/m<missing VAR>2 was obtained in Nb/CoFeB/MgOheterostructures.|Anoptimized magnetoresistance of 120% was obtained at room temperature, with adamping parameter of 0.011 determined by ferromagnetic resonance.
Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus|CoPS3|2.9|%|0.5625|CoPS3 exhibits aC2/m<missing VAR> rightarrow Poverline3 structural transformation at 7 GPaaccompanied by a 2.9% reduction in the volume per formula unit.|CoPS3 exhibits aC2/m<missing VAR> rightarrow Poverline3 structural transformation at 7 GPaaccompanied by a 2.9% reduction in the volume per formula unit.
Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier|La2NiMnO6|24|%|0.044444444444444446|The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.|The ratio oftunnel magnetoresistance reaches a maximum value of 24% at 10 K, and itdecreases with temperature until it completely disappears above the criticaltemperature of LNMO at 280 K.
Giant positive magnetoresistance in metallic VOx thin films|A. D. Rata,V. Kataev,D. Khomskii,T. Hibma|SrTiO3|70|%|0.06914893617021277|We report on giant positive magnetoresistance effect observed in VOx thinfilms, epitaxially grown on SrTiO3 substrate.|At low temperatures itsmagnitude reaches 70% in a magnetic field of 5 T.
Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices|R. G. Mani,J. H. Smet,K. von Klitzing,V. Narayanamurti,W. B. Johnson,V. Umansky|GaAs/AlGaAs|2|%|1.0|Theresults confirm a f<missing VAR>-independent 1/4 cycle phase shift with respect to the hf j<missing VAR>hbaromegac<missing VAR> condition for j<missing VAR> geq 1, and they also suggest a small(approx 2%) reduction in the effective mass ratio, m/m, with respectto the standard value for GaAs/AlGaAs devices.|Theresults confirm a f<missing VAR>-independent 1/4 cycle phase shift with respect to the hf j<missing VAR>hbaromegac<missing VAR> condition for j<missing VAR> geq 1, and they also suggest a small(approx 2%) reduction in the effective mass ratio, m/m, with respectto the standard value for GaAs/AlGaAs devices.
Sodium Doped LaMnO3 Thin Films: Influence of Substrate and Thickness on Physical Properties|Lorenzo Malavasi,Maria Cristina Mozzati,Ivano Alessandri,Laura Depero,Carlo B. Azzoni,Giorgio Flor|NdGaO3|70|%|0.25|In this paper we report the results about the synthesis and characterizationof optimally doped La1-xNaxMnO3 thin films grown onto SrTiO3 (100), NdGaO3(100) and NdGaO3 (110) for thickness ranging from 11 to 82 nm.|We obtainedvery smooth films displaying MR values greater than 70%, near to roomtemperature.
Atomically Resolved Spin-Dependent Tunnelling on the Oxygen-Terminated Fe3O4 (111)|N. Berdunov,S. Murphy,G. Mariotto,I. V. Shvets|Fe3O4|250|%|0.07434052757793765|Atomically Resolved Spin-Dependent Tunnelling on the Oxygen-Terminated Fe3O4 (111).|The estimated variations in tunneling magnetoresistance (TMR)of 250% suggest that the spin-transport properties are significantly alteredlocally by the presence of surface defects.
Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas|SC|3|%|0.035612535612535606|Strikingly, these data show thatbelow its Tc SC the Nb interlayer under the influence of the outer Ni80Fe20layers attains a magnetization component transverse to the external field.|In contrast, in the bilayers the effect is only minor since from 3%in the normal state increases only to 70 % for temperatures below Tc.
Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono|CoFeB/MgO/CoFeB|200|%|1.0|We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).|We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).
Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier|Muftah Al-Mahdawi,Masashi Sahashi|NCs|29|%|0.7647058823529411|Depending on the purity of NCs from Al contamination, we observed up to 29% AMRratio at room temperature.|Depending on the purity of NCs from Al contamination, we observed up to 29% AMRratio at room temperature.
Large magnetoresistance observed in α-Sn/InSb heterostructures|Yuanfeng Ding,Huanhuan Song,Junwei Huang,Jinshan Yao,Yu Gu,Lian Wei,Yu Deng,Hongtao Yuan,Hong Lu,Yan-Feng Chen|InSb|0|%|1.0|Anenhanced large magnetoresistance (MR) over 450,000% has been observed comparedto that of the bare InSb substrate.|Anenhanced large magnetoresistance (MR) over 450,000% has been observed comparedto that of the bare InSb substrate.
Large Magnetoresistance and Jahn Teller effect in Sr$_2$FeCoO$_6$|R. Pradheesh,Harikrishnan S. Nair,V. Sankaranarayanan,K. Sethupat|Sr2FeCoO6|63|%|1.0|A large, negative and anomalousmagnetoresistance of approx 63% at 14K in 12T applied field is observed forSr2FeCoO6.|A large, negative and anomalousmagnetoresistance of approx 63% at 14K in 12T applied field is observed forSr2FeCoO6.
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|65.5|%|0.011194029850746268|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|10|%|0.009978991596638655|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|14|%|0.004213483146067416|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer|SWCN|300|%|0.5517241379310345|Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.|Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.
Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning|TaAs2|-98|%|1.0|Here we show that semimetallic TaAs2possesses a gigantic negative magnetoresistance (-98% in a field of 3 T atlow temperatures), with an unknown mechanism.|Here we show that semimetallic TaAs2possesses a gigantic negative magnetoresistance (-98% in a field of 3 T atlow temperatures), with an unknown mechanism.
Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$|K. Shrestha,D. Graf,V. Marinova,B. Lorenz,C. W. Chu|Bi2Se2.1Te0.9|1900|%|0.024193548387096774|The WAL<missing VAR> curves measured at different tilt angles merge together whenthey are plotted as a function of the normal field components, showing thatsurface states dominate the magnetoconductance in theBi2Se2.1Te0.9 crystal.|In addition, the sample shows a large positivemagnetoresistance that reaches 1900% under a magnetic field of 35 T at T<missing VAR>0.33Kwith no sign of saturation.
Topological phase transition induced extreme magnetoresistance in TaSb$_{2}$|Zheng Wang,Yupeng Li,Yunhao Lu,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhuan Xu|B1.96|0.1|%|1.0|Thequadratic growth of magnetoresistance (MR propto,B1.96) is notsaturating up to 15 T, a manifestation of nearly perfect compensation with<0.1% mismatch between electron and hole pockets in this semimetal.|Thequadratic growth of magnetoresistance (MR propto,B1.96) is notsaturating up to 15 T, a manifestation of nearly perfect compensation with<0.1% mismatch between electron and hole pockets in this semimetal.
Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park|Fe3GeTe2/Fe3GeTe2|0.05|%|0.016666666666666666|Here, we achieved a twisted magnetic vdW Fe3GeTe2/Fe3GeTe2 junctionwith broken crystalline symmetry.|The PMR ratio is found to be 0.05% andgets monotonically enhanced as temperature decreases like a metallic giantmagnetoresistance (GMR).
Strong magnetoresistance in a graphene Corbino disk at low magnetic fields|Masahiro Kamada,Vanessa Gall,Jayanta Sarkar,Manohar Kumar,Antti Laitinen,Igor Gornyi,Pertti Hakonen|(B)|2|%|0.05|The low-temperature relativemagnetotoresistance [R<missing VAR>(B)-R<missing VAR>(0)]/R<missing VAR>(0) amounts to 4000 B2%  at the Diracpoint (B in Tesla), with a quite weak temperature dependence below 30,K.|The low-temperature relativemagnetotoresistance [R<missing VAR>(B)-R<missing VAR>(0)]/R<missing VAR>(0) amounts to 4000 B2%  at the Diracpoint (B in Tesla), with a quite weak temperature dependence below 30,K.
Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee|Fe/AlN/Fe|0|%|1.0|The only exception is for the Fe/AlN/Fe junction,where we predict a magnetoresitance of around 1,000% at low bias.|The only exception is for the Fe/AlN/Fe junction,where we predict a magnetoresitance of around 1,000% at low bias.
Direct link between disorder, mobility and magnetoresistance in topological semimetals|Jocienne N. Nelson,Anthony D. Rice,Chase Brooks,Ian A. Leahy,Glenn Teeter,Mark Van Schilfgaarde,Stephan Lany,Brian Fluegel,Minhyea Lee,Kirstin Alberi|As/Cd|200|%|1.0|Reducing arsenic vacancies bychanging the As/Cd flux ratio used during deposition results in an increase inthe magnetoresistance from 200%-1000% and an increase in mobility from5000-18,000 cm2/Vs.|Reducing arsenic vacancies bychanging the As/Cd flux ratio used during deposition results in an increase inthe magnetoresistance from 200%-1000% and an increase in mobility from5000-18,000 cm2/Vs.
Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan|EuGa4|0|%|1.0|At 2 K in a field of 14 T,the transverse magnetoresistance of EuGa4 exceeds 200,000%, which is more thantwo orders of magnitude larger than that of other known magnetic T<missing VAR>SMs.|At 2 K in a field of 14 T,the transverse magnetoresistance of EuGa4 exceeds 200,000%, which is more thantwo orders of magnitude larger than that of other known magnetic T<missing VAR>SMs.
Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou|FB|12.5|%|1.0|Contrary to the predicted single, star-shaped,closed orbit Fermi surface from band structure calculations (with an expectedapproximate area of 12.5% of AFBZ), two fundamental frequencies Fl<missing VAR> and Fh<missing VAR>are detected in the SdH signal.|Contrary to the predicted single, star-shaped,closed orbit Fermi surface from band structure calculations (with an expectedapproximate area of 12.5% of AFBZ), two fundamental frequencies Fl<missing VAR> and Fh<missing VAR>are detected in the SdH signal.
Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou|FB|2.4|%|0.5|These orbits correspond to 2.4% and 6.8% of thearea of the first Brillouin zone(AFBZ), with effective masses Fl<missing VAR>  4.0 /-0.5 and Fh<missing VAR>  7.3 /- 0.1.|These orbits correspond to 2.4% and 6.8% of thearea of the first Brillouin zone(AFBZ), with effective masses Fl<missing VAR>  4.0 /-0.5 and Fh<missing VAR>  7.3 /- 0.1.
Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou|FB|6.8|%|0.8571428571428571|These orbits correspond to 2.4% and 6.8% of thearea of the first Brillouin zone(AFBZ), with effective masses Fl<missing VAR>  4.0 /-0.5 and Fh<missing VAR>  7.3 /- 0.1.|These orbits correspond to 2.4% and 6.8% of thearea of the first Brillouin zone(AFBZ), with effective masses Fl<missing VAR>  4.0 /-0.5 and Fh<missing VAR>  7.3 /- 0.1.
Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus|Na0.75CoO2|50|%|0.0037393162393162395|The magnetic, thermal and transport properties of Na0.75CoO2 single crystalsgrown by the floating zone (FZ) method are reported.|The jump in the heat capacity at the SD<missing VAR>W transition is 0.45 J/K-mole-Co orabout 50% of the value expected from mean-field weak-coupling theory.
Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus|(Na0.75CoO2)|100|%|0.02528735632183908|No SD<missing VAR>Wtransition is observed in our polycrystalline powder with the same nominalcomposition (Na0.75CoO2) and lattice constants.|The magnetoresistance is small at theSD<missing VAR>W transition but increases in both directions reaching a value of 100% at 2 Kfor applied fields of 8 Tesla.
Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud|I(V)|1|%|0.08695652173913043|At this low temperature, some samples display in their I(V)characteristics abrupt and hysteretic transitions between the Coulomb blockaderegime and the conductive regime.|Below1.8 K, this high-field magnetoresistance abruptly disappears and inversetunnelling magnetoresistance is observed, the amplitude of which does notexceed 1%.
Thin-Film Trilayer Manganate Junctions|Jonathan Z. Sun|La0.67Sr0.33MnO|3|%|1.0|The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.|The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.
Hall-effect in LuNi_2B_2C in normal and superconducting mixed states|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,K. -H. Müller|LuNi2B2C|90|%|0.03333333333333333|The Hall resistivity rhoxy of LuNi2B2C is negative in the normal as wellas in the mixed state and has no sign reversal typical for high-Tcsuperconductors.|A distinct nonlinearity in the rhoxy dependence on field Hwas found in the normal state for T<missing VAR> < 40K, accompanied by a largemagnetoresistance reaching 90% for mu0H16T<missing VAR> at T<missing VAR>20K.
Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7|H. Fujioka,M. Kubota,K. Hirota,H. Yoshizawa,Y. Moritomo,Y. Endoh|MnO3|30|%|0.05625|Thevalue is similar to that of similarly doped La1-xSrxMnO3 though its Tc is threetimes higher, indicating a large renormalization due to low dimensionality.|The out-of-plane coupling is about 30% of the in-plane couplingthough the Mn-O bond lengths are similar.
Magnetization Distribution in the layered CMR Manganite La1.2Sr1.8Mn2O7 from Polarized Neutron Diffraction|D. N. Argyriou,P. J. Brown,J. S. Gardner,R. H. Heffner|La1.2Sr1.8Mn2O7|4|%|0.06493506493506493|In the ferromagnetic metallic state of the colossal magnetoresistive (CMR)manganite La1.2Sr1.8Mn2O7, the spin density distribution is essentially inagreement with the standard picture in which the unpaired electrons occupy thethree t2g orbitals, dxy, dyz, and dxz.|However we find a small spin density 4%of the total Mn spin) on the apical O(2) oxygen atom at both 100 K and 220 Kand we suggest that this is due to covalency effects.
Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya|BS|2.2|%|0.47619047619047616|We report the magnetotransport properties ofBi2Sr2-xLax<missing VAR>Cu1-zZnz<missing VAR>O6delta (Zn-doped BSL<missing VAR>CO) single crystalswith z<missing VAR> of up to 2.2%.|We report the magnetotransport properties ofBi2Sr2-xLax<missing VAR>Cu1-zZnz<missing VAR>O6delta (Zn-doped BSL<missing VAR>CO) single crystalswith z<missing VAR> of up to 2.2%.
Magnetoresistance of Untwinned YBa_{2}Cu_{3}O_{y} Single Crystals in a Wide Range of Doping: Anomalous Hole-Doping Dependence of the Coherence Length|Yoichi Ando,Kouji Segawa|YBa2Cu3O|12|%|0.08633093525179857|Magnetoresistance (MR) in the a-axis resistivity of untwinnedYBa2Cu3Oy<missing VAR> single crystals is measured for a wide range of doping (y<missing VAR> 6.45 - 7.0).|The y<missing VAR>-dependence of the in-plane coherence length xiabestimated from the fluctuation magnetoconductance indicates that thesuperconductivity is anomalously weakened in the 60-K phase; this givesevidence, together with the Hall coefficient and the a-axis thermopower datathat suggest the hole doping to be 12% for y<missing VAR>  6.65, that the origin of the60-K plateau is the 1/8 anomaly.
A Theoretical Search for the Optimum Giant Magnetoresistance|Tat-Sang Choy,Jian Chen,Selman Hershfield|Ni/Cu|450|%|1.0|Using simulated annealing, hundreds of different configurationsof the atomic layers are examined to find a maximum GMR of 450% in ultrathinNi/Cu superlattices.|Using simulated annealing, hundreds of different configurationsof the atomic layers are examined to find a maximum GMR of 450% in ultrathinNi/Cu superlattices.
Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2|C. Petrovic,J. W. Kim,S. L. Bud'ko,A. I. Goldman,P. C. Canfield,W. Choe,G. J. Miller|FeSb2|2200|%|0.05725190839694656|Magnetic susceptibility of FeSb2 shows diamagnetic to paramagnetic crossoveraround 100K.|In H70k<missing VAR>Oesemiconducting transport is restored for T<missing VAR><300K, resulting in largemagnetoresistance [rho(70k<missing VAR>Oe)-rho(0)]/rho(0)2200% in the crossover temperaturerange<missing PERIOD>
"Spin-Flop" Transition and Anisotropic Magnetoresistance in Pr_{1.3-x}La_{0.7}Ce_{x}CuO_{4}: Unexpectedly Strong Spin-Charge Coupling in Electron-Doped Cuprates|A. N. Lavrov,H. J. Kang,Y. Kurita,T. Suzuki,Seiki Komiya,J. W. Lynn,S. -H. Lee,Pengcheng Dai,Yoichi Ando|CuO4|30|%|0.04038461538461539|We use transport and neutron-scattering measurements to show that amagnetic-field-induced transition from noncollinear to collinear spinarrangement in adjacent CuO2 planes of lightly electron-dopedPr1.3-xLa0.7Cex<missing VAR>CuO4 (x<missing VAR>0.01) crystals affects significantly boththe in-plane and out-of-plane resistivity.|The observed MR of more than 30% at lowtemperatures induced by a modest modification of the spin structure indicatesan unexpectedly strong spin-charge coupling in electron-doped cuprates.
Large negative magnetoresistance in a ferromagnetic shape memory alloy : Ni_{2+x}Mn_{1-x}Ga|C. Biswas,R. Rawat,S. R. Barman|Mn1-xGa|5|%|0.5|Large negative magnetoresistance in a ferromagnetic shape memory alloy  Ni2x<missing VAR>Mn1-xGa.|5% negative magnetoresistance (MR) at room temperature has been observed inbulk Ni2x<missing VAR>Mn1-xGa.
Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno|CoFeB|260|%|0.5|High-resolution transmission electron microscope images show thatannealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeBstructures, even though CoFeB electrodes are amorphous in the as-sputteredstate.|The TMR ratio increases with annealing temperature and is as high as260% at room temperature and 403% at 5 K.
Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno|CoFeB|403|%|0.5|High-resolution transmission electron microscope images show thatannealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeBstructures, even though CoFeB electrodes are amorphous in the as-sputteredstate.|The TMR ratio increases with annealing temperature and is as high as260% at room temperature and 403% at 5 K.
The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau|O3-d|30|%|0.02976190476190476|The oxygen-deficient perovskite cobaltite SrCo1-xNbxO3-d was synthesized bydirect solid-state reaction and its magnetotransport properties wereinvestigated.|Importantly, this phase reaches a large magnetoresistance (MR) value, MR  -(r<missing VAR>H- r<missing VAR>0) / r<missing VAR>0  30% at 5 K in 7 T.
Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions|G. D. Fuchs,J. A. Katine,S. I. Kiselev,D. Mauri,K. S. Wooley,D. C. Ralph,R. A. Buhrman|MgO|10|%|0.5|We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs)with ultra-thin MgO tunnel barrier layers to investigate the relationshipbetween the spin-transfer torque and the tunnel magnetoresistance (TMR) underfinite bias.|We find that the spin torque per unit current exerted on the freelayer decreases by less than 10% over a bias range where the TMR decreases byover 40%.
Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions|G. D. Fuchs,J. A. Katine,S. I. Kiselev,D. Mauri,K. S. Wooley,D. C. Ralph,R. A. Buhrman|MgO|40|%|0.5|We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs)with ultra-thin MgO tunnel barrier layers to investigate the relationshipbetween the spin-transfer torque and the tunnel magnetoresistance (TMR) underfinite bias.|We find that the spin torque per unit current exerted on the freelayer decreases by less than 10% over a bias range where the TMR decreases byover 40%.
Current-induced switching in single ferromagnetic layer nanopillar junctions|Barbaros Oezyilmaz,Andrew D. Kent|Cu/Co/Cu|0.5|%|0.10638297872340426|Current induced magnetization dynamics in asymmetric Cu/Co/Cu single magneticlayer nanopillars has been studied experimentally at room temperature and inlow magnetic fields applied perpendicular to the thin film plane.|The current induced resistance change is 0.5%, a factor of 5 greater than theanisotropic magnetoresistance (AMR) effect.
Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno|CoFe/Ru/CoFeB|361|%|0.04310344827586207|We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).|The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy|MnO3|30|%|0.3333333333333333|A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.|In such structures, a positive tunnel magnetoresistance up to30% is obtained at low temperature.
Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures|Alireza Saffarzadeh,Ali A. Shokri|GaAs|65|%|0.8421052631578947|TMR ratios more than 65% are obtained at zero temperature,when one GaAs monolayer (approx 0.565 nm) is used as a tunnel barrier.|TMR ratios more than 65% are obtained at zero temperature,when one GaAs monolayer (approx 0.565 nm) is used as a tunnel barrier.
Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno|Co40Fe40B20|355|%|1.0|The TMR ratio in a MTJ with Co40Fe40B20 reference and free layersreached 355% at the post-deposition annealing temperature of Ta400 degree C.|The TMR ratio in a MTJ with Co40Fe40B20 reference and free layersreached 355% at the post-deposition annealing temperature of Ta400 degree C.
Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno|CoFeB|450|%|0.09615384615384616|The key to have high TMR ratio is to have highly oriented(001) MgO barrier/CoFeB crystalline electrodes.|The highest TMR ratio obtainedso far is 450% at Ta  450 degree C in a pseudo spin-valve MTJ.
Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno|CoFeB/MgO/CoFeB|472|%|0.8387096774193549|We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.|We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.
Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno|CoFeB/MgO/CoFeB|804|%|0.7368421052631579|We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.|We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.
Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions|A. D. Rata,H. Braak,D. E. Buergler,C. M. Schneider|Co2Cr0.6Fe0.4Al/MgO/CoFe|-66|%|0.5|Magnetic tunnel junctions with the layer sequenceCo2Cr0.6Fe0.4Al/MgO/CoFe were fabricated by magnetron sputteringat room temperature (RT).|The samples exhibit a large inverse tunnelingmagnetoresistance (TMR) effect of up to -66% at RT.
Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions|A. D. Rata,H. Braak,D. E. Buergler,C. M. Schneider|Co2Cr0.6Fe0.4Al/MgO/CoFe|-84|%|0.20608108108108109|Magnetic tunnel junctions with the layer sequenceCo2Cr0.6Fe0.4Al/MgO/CoFe were fabricated by magnetron sputteringat room temperature (RT).|The largest value of -84%at 20 K reflects a rather weak influence of temperature.
Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,D. Suyatin,L. Samuelson|Co/Ni/Co|18|%|0.022388059701492536|We report on magnetotransport investigations of nano-scaled ferromagneticCo/Ni/Co single electron transistors.|A large TMR of about 18% is observed within a finite source-drain biasregime.
A Nuclear Magnetic Resonance Study on Rubrene-cobalt Nano-composites|Masashi Shiraishi,Haruka Kusai,Ryo Nouchi,Takayuki Nozaki,Teruya Shinjo,Yoshishige Suzuki,Makoto Yoshida,Masashi Takigawa|(C42H28)|80|%|0.2857142857142857|We implemented a nuclear magnetic resonance (NMR) study on rubrene(C42H28)-Conano-composites that exhibit an enhanced magnetoresistance (MR) ratio of 80%.|We implemented a nuclear magnetic resonance (NMR) study on rubrene(C42H28)-Conano-composites that exhibit an enhanced magnetoresistance (MR) ratio of 80%.
Colossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$|Y. Yamato,M. Matsukawa,R. Suryanarayanan,S. Nimori,M. Apostu,A. Revcolevschi,K. Koyama,N. Kobayashi|(La0.4Pr0.6)1.2Sr1.8Mn2O7|-95|%|0.5|We report a significant decrease in the low-temperature resistance induced bythe application of an electric current on the ab-plane in the paramagneticinsulating (PM<missing VAR>I) state of(La0.4Pr0.6)1.2Sr1.8Mn2O7.|A colossalelectroresistance effect attaining -95% is observed at lower temperatures.
A large magnetoinductance effect in La0.67Ba0.33MnO3|V. B. Naik,A. Rebello,R. Mahendiran|La0.67Ba0.33MnO3|60|%|0.011160714285714286|We report four probe impedance of La0.67Ba0.33MnO3 at f<missing VAR>  100 kHz underdifferent dc bias magnetic fields.|The magnetoreactance exhibits a sharp peak close to Tp andits magnitude ( 60% in H  1 kG) exceeds that of the ac magnetoresistance ( 5% inH  1 kG).
Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman|CoFe|-0.08|%|1.0|In MnGa/Cu/ CoFe spin valves a transition from a negative (-0.08%) to positive(3.88%) MR is realized by introducing a thin spin polarizing CoFe insertionlayer at the MnGa/Cu interface and tailoring the MnGa thickness.|In MnGa/Cu/ CoFe spin valves a transition from a negative (-0.08%) to positive(3.88%) MR is realized by introducing a thin spin polarizing CoFe insertionlayer at the MnGa/Cu interface and tailoring the MnGa thickness.
Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman|CoFe|3.88|%|1.0|In MnGa/Cu/ CoFe spin valves a transition from a negative (-0.08%) to positive(3.88%) MR is realized by introducing a thin spin polarizing CoFe insertionlayer at the MnGa/Cu interface and tailoring the MnGa thickness.|In MnGa/Cu/ CoFe spin valves a transition from a negative (-0.08%) to positive(3.88%) MR is realized by introducing a thin spin polarizing CoFe insertionlayer at the MnGa/Cu interface and tailoring the MnGa thickness.
Current driven discontinuous insulator-metal transition and colossal low-field magnetoresistance in Sm0.6Sr0.4MnO3|A. Rebello,R. Mahendiran|Sm0.6Sr0.4MnO3|-99|%|0.04|It is shown that with increasing magnitude of current (I), resistivity ofSm0.6Sr0.4MnO3 transforms from a smooth to a discontinuous insulator-metaltransition which is also accompanied by an abrupt decrease in temperature ofthe sample.|We report colossal low-field magnetoresistance under a high currentbias (-99% at H  0.5 T and 70 K) and electroresistance (-8000 % at H  0 T and60 K) for I  11 mA.
Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe$_2$As$_2$|M. Kimata,T. Terashima,N. Kurita,H. Satsukawa,A. Harada,K. Kodama,A. Sato,M. Imai,K. Kihou,C. H. Lee,H. Kito,H. Eisaki,A. Iyo,T. Saito,H. Fukazawa,Y. Kohori,H. Harima,S. Uji|KFe2As2|12|%|0.1792452830188679|We report the results of the angular-dependent magnetoresistance oscillations(AMROs), which can determine the shape of bulk Fermi surfaces inquasi-two-dimensional (Q2D) systems, in a highly hole-doped Fe-basedsuperconductor KFe2As2 with Tc approx 3.7 K.|From the AMROs, wedetermined the two Q2D FSs with rounded-square cross sections, corresponding to12% and 17% of the first Brillouin zone.
Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe$_2$As$_2$|M. Kimata,T. Terashima,N. Kurita,H. Satsukawa,A. Harada,K. Kodama,A. Sato,M. Imai,K. Kihou,C. H. Lee,H. Kito,H. Eisaki,A. Iyo,T. Saito,H. Fukazawa,Y. Kohori,H. Harima,S. Uji|KFe2As2|17|%|0.20689655172413793|We report the results of the angular-dependent magnetoresistance oscillations(AMROs), which can determine the shape of bulk Fermi surfaces inquasi-two-dimensional (Q2D) systems, in a highly hole-doped Fe-basedsuperconductor KFe2As2 with Tc approx 3.7 K.|From the AMROs, wedetermined the two Q2D FSs with rounded-square cross sections, corresponding to12% and 17% of the first Brillouin zone.
K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu|Ba1-y|-70|%|1.0|With low coercive field lessthan 10 Oe and large magnetoresistence of about -70%, the hexagonal structuredBa1-yKyCd2-xMnxAs2 can be served as a promising candidate for spinmanipulations.|With low coercive field lessthan 10 Oe and large magnetoresistence of about -70%, the hexagonal structuredBa1-yKyCd2-xMnxAs2 can be served as a promising candidate for spinmanipulations.
Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy|Z. Q. Liu,L. Li,Z. Gai,J. D. Clarkson,S. L. Hsu,A. T. Wong,L. S. Fan,M. -W. Lin,C. M. Rouleau,T. Z. Ward,H. N. Lee,A. S. Sefat,H. M. Christen,R. Ramesh|FeRh/BaTiO3|22|%|0.5|It is achieved by a small electric field of 2 kV/cm viapiezoelectric strain-mediated magnetoelectric coupling and the resultingmagnetic phase transition in epitaxial FeRh/BaTiO3 heterostructures.|We report a giant, 22%, electroresistance modulation for a metallic alloyabove room temperature.
Anisotropic thermal magnetoresistance for an active control of radiative heat transfer|R. M. Abraham Ekeroth,Philippe Ben-Abdallah,Juan Carlos Cuevas,Antonio García-Martín|InSb|800|%|1.0|We illustrate this effect with the case of two InSbspherical particles where we find that the ATMR amplitude can reach values ofup to 800% for a magnetic field of 5 T, which is many orders of magnitudelarger than its spintronic analogue in electronic devices.|We illustrate this effect with the case of two InSbspherical particles where we find that the ATMR amplitude can reach values ofup to 800% for a magnetic field of 5 T, which is many orders of magnitudelarger than its spintronic analogue in electronic devices.
Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices|Minhao Zhang,Huaiqiang Wang,Kejun Mu,Pengdong Wang,Wei Niu,Shuai Zhang,Guiling Xiao,Yequan Chen,Tong Tong,Dongzhi Fu,Xuefeng Wang,Haijun Zhang,Fengqi Song,Feng Miao,Zhe Sun,Zhengcai Xia,Xinran Wang,Yongbing Xu,Baigeng Wang,Dingyu Xing,Rong Zhang|Bi1-x|-3|%|0.23626373626373626|We report the study of a tri-axial vector magnetoresistance (MR) innonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x<missing VAR>  0.08.|MR at three directions is about in a -3% -1%225% ratio at 2 K.
Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices|Minhao Zhang,Huaiqiang Wang,Kejun Mu,Pengdong Wang,Wei Niu,Shuai Zhang,Guiling Xiao,Yequan Chen,Tong Tong,Dongzhi Fu,Xuefeng Wang,Haijun Zhang,Fengqi Song,Feng Miao,Zhe Sun,Zhengcai Xia,Xinran Wang,Yongbing Xu,Baigeng Wang,Dingyu Xing,Rong Zhang|Bi1-x|-1|%|0.23684210526315788|We report the study of a tri-axial vector magnetoresistance (MR) innonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x<missing VAR>  0.08.|MR at three directions is about in a -3% -1%225% ratio at 2 K.
Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices|Minhao Zhang,Huaiqiang Wang,Kejun Mu,Pengdong Wang,Wei Niu,Shuai Zhang,Guiling Xiao,Yequan Chen,Tong Tong,Dongzhi Fu,Xuefeng Wang,Haijun Zhang,Fengqi Song,Feng Miao,Zhe Sun,Zhengcai Xia,Xinran Wang,Yongbing Xu,Baigeng Wang,Dingyu Xing,Rong Zhang|Bi1-x|225|%|0.2375|We report the study of a tri-axial vector magnetoresistance (MR) innonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x<missing VAR>  0.08.|MR at three directions is about in a -3% -1%225% ratio at 2 K.
Magnetic Tunnel Junction Performance Under Mechanical Strain|Niklas Roschewsky,Sebastian Schafer,Frances Hellman,Vladimir Nikitin|SI2|50|%|0.019230769230769232|We find that variations in these parameters arenegligible less than SI2percent over the entire measured range betweenthe zero stress condition and the maximum stress at the point of waferbreakage.|This setup enables us to measure keydevice performance parameters, such as tunnel magnetoresistance (TMR),switching current (Ic<missing VAR>50%) and thermal stability (Delta), as afunction of applied stress.
Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao|LiF|16|%|0.5|Due to the water solubility of LiF, the devices were fully packagedin situ.|The devices showed sizeable positive TMR up to 16% at low biasvoltages but clearly inverted TMR at higher bias voltages.
Large Magnetoresistance in Topological Insulator Candidate TaSe3|Yong Zhang,Tongshuai Zhu,Haijun Bu,Zixiu Cai,Chuanying Xi,Bo Chen,Boyuan Wei,Dongjing Lin,Hangkai Xie,Muhammad Naveed,Xiaoxiang Xi,Fucong Fei,Haijun Zhang,Fengqi Song|TaSe3|1000|%|1.0|Large unsaturated magnetoresistance (XMR) with magnitude about 1000% isobserved in topological insulator candidate TaSe3 from our high field (up to 38T) measurements.|Large unsaturated magnetoresistance (XMR) with magnitude about 1000% isobserved in topological insulator candidate TaSe3 from our high field (up to 38T) measurements.
GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka|GaMnAs|175|%|1.0|We observe tunneling magnetoresistance (TMR)ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-basedMTJs with other barrier materials in the same temperature region.|We observe tunneling magnetoresistance (TMR)ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-basedMTJs with other barrier materials in the same temperature region.
Extremely Large Magnetoresistance in the Nonmagnetic Metal PdCoO2|Hiroshi Takatsu,Jun J. Ishikawa,Shingo Yonezawa,Harukazu Yoshino,Tatsuya Shishidou,Tamio Oguchi,Keizo Murata,Yoshiteru Maeno|PdCoO2|35000|%|0.23557692307692307|Extremely large magnetoresistance is realized in the nonmagnetic layeredmetal PdCoO2.|In spite of a highly conducting metallic behavior with a simplequasi-two-dimensional hexagonal Fermi surface, the interlayer resistancereaches up to 35000% for the field along the [1-10] direction.
Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device|Koki Chonan,Nguyen Huynh Duy Khang,Masaaki Tanaka,Pham Nam Hai|MnGa/GaAs|12|%|0.5|Its current-voltagecharacteristics show nonlinear behavior below 50 K, indicating that tunneltransport through the MnGa/GaAs Schottky barrier is dominant at lowtemperatures.|We observed clear magnetoresistance (MR) ratio up to 12% at 4 Kwhen applying a magnetic field perpendicular to the film plane.
Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura|Ni/MgO|2000|%|0.32857142857142857|We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111).|The Co-basedjunction is shown to have a TMR ratio over 2000%, which is one order higherthan that of the Ni-based one.
Pseudo spin-valve switch based on ferromagnet/superconductor/ferromagnet trilayer microbridge|L. N. Karelina,V. V. Bol'ginov,Sh. A. Erkenov,S. V. Egorov,I. A. Golovchanskiy,V. I. Chichkov,A. ben Hamida,V. V. Ryazanov|PdFe|1|%|1.0|A noticeable magnetoresistive effect has been observed onferromagnet/superconductor/ferromagnet (FSF) microbridges based on dilutedferromagnetic PdFe alloy containing as small as 1% magnetic atoms.|A noticeable magnetoresistive effect has been observed onferromagnet/superconductor/ferromagnet (FSF) microbridges based on dilutedferromagnetic PdFe alloy containing as small as 1% magnetic atoms.
Synchronous Unsupervised STDP Learning with Stochastic STT-MRAM Switching|Peng Zhou,Julie A. Smith,Laura Deremo,Stephen K. Heinrich-Barna,Joseph S. Friedman|NIS|90|%|1.0|The proposed systemenables a single-layer network to achieve 90% inference accuracy on the M<missing VAR>NIST<missing VAR>dataset.|The proposed systemenables a single-layer network to achieve 90% inference accuracy on the M<missing VAR>NIST<missing VAR>dataset.
Modulation of Spin Seebeck Effect by Hydrogenation|K. Ogata,T. Kikkawa,E. Saitoh,Y. Shiomi|SS|3|%|1.0|In the presence of 3% hydrogen gas, SSE<missing VAR> voltage decreasesby more than 50% from the magnitude observed in pure Ar gas.|In the presence of 3% hydrogen gas, SSE<missing VAR> voltage decreasesby more than 50% from the magnitude observed in pure Ar gas.
Modulation of Spin Seebeck Effect by Hydrogenation|K. Ogata,T. Kikkawa,E. Saitoh,Y. Shiomi|SS|50|%|1.0|In the presence of 3% hydrogen gas, SSE<missing VAR> voltage decreasesby more than 50% from the magnitude observed in pure Ar gas.|In the presence of 3% hydrogen gas, SSE<missing VAR> voltage decreasesby more than 50% from the magnitude observed in pure Ar gas.
Assisted Tunneling in Ferromagnetic Junctions and Half-Metallic Oxides|A. M. Bratkovsky|CrO2/TiO2|30|%|0.07142857142857142|Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2.|Microscopic calculation within arealistic model shows that direct tunneling in iron group systems leads toabout a 30% change in resistance, which is close but lower than experimentallyobserved values.
Assisted Tunneling in Ferromagnetic Junctions and Half-Metallic Oxides|A. M. Bratkovsky|CrO2/TiO2|100|%|0.25|Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2.|The modelpresented here is applied qualitatively to half-metallics with 100% spinpolarization, where one-magnon processes are suppressed and the change inresistance in the absence of spin-mixing on impurities may be arbitrarilylarge.
Transformation of spin information into large electrical signals via carbon nanotubes|Luis E. Hueso,Jose M. Pruneda,Valeria Ferrari,Gavin Burnell,Jose P. Valdes-Herrera,Benjamin D. Simons,Peter B. Littlewood,Emilio Artacho,Albert Fert,Neil D. Mathur|La0.7Sr0.3MnO3|1|%|0.5|We overcome this long standing problem in spintronics bydemonstrating large magnetoresistance effects of 61% at 5 K in devices wherethe non-magnetic channel is a multiwall carbon nanotube that spans a 1.5 microngap between epitaxial electrodes of the highly spin polarized manganiteLa0.7Sr0.3MnO3.|However, the transformation of spin information into largeelectrical signals is limited by spin relaxation such that the magnetoresistivesignals are below 1%.
Transformation of spin information into large electrical signals via carbon nanotubes|Luis E. Hueso,Jose M. Pruneda,Valeria Ferrari,Gavin Burnell,Jose P. Valdes-Herrera,Benjamin D. Simons,Peter B. Littlewood,Emilio Artacho,Albert Fert,Neil D. Mathur|La0.7Sr0.3MnO3|61|%|1.0|We overcome this long standing problem in spintronics bydemonstrating large magnetoresistance effects of 61% at 5 K in devices wherethe non-magnetic channel is a multiwall carbon nanotube that spans a 1.5 microngap between epitaxial electrodes of the highly spin polarized manganiteLa0.7Sr0.3MnO3.|We overcome this long standing problem in spintronics bydemonstrating large magnetoresistance effects of 61% at 5 K in devices wherethe non-magnetic channel is a multiwall carbon nanotube that spans a 1.5 microngap between epitaxial electrodes of the highly spin polarized manganiteLa0.7Sr0.3MnO3.
Theoretical studies of spin-dependent electrical transport through carbon nanotbes|S. Krompiewski|CN|20|%|1.0|The former case shows that quite asubstantial giant magnetoresistance (GMR) effect occurs (pm 20%) fordisorder-free CNTs.|The former case shows that quite asubstantial giant magnetoresistance (GMR) effect occurs (pm 20%) fordisorder-free CNTs.
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz|MgO|20|%|0.7333333333333333|The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.|The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz|MgO|112|%|0.6415094339622641|The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.|The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Diffusive and ballistic current spin-polarization in magnetron-sputtered L1o-ordered epitaxial FePt|K. M. Seemann,V. Baltz,M. MacKenzie,J. N. Chapman,B. J. Hickey,C. H. Marrows|S0.90|80|%|0.022786458333333332|The film studied displayed a longrange chemical order parameter of S0.90, and hence has a very strongperpendicular magnetic anisotropy.|At all temperaturesranging from 2 K to 258 K, we found a diffusive spin current polarization of >80%.
Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani|YS|20|%|0.014238410596026492|Polycrystalline La2/3Sr1/3MnO3 (LSMO) thin films weresynthesized by pulsed laser ablation on single crystal (100) yttria-stabilizedzirconia (YSZ) substrates to investigate the mechanism of magneto-transport ina granular manganite.|Thehigh negative magnetoresistance (approx 20%) and ln emphT<missing VAR> dependencebelow the minimum are explained on the basis of Kondo-type scattering fromblocked Mn-spins in the intergranular material.
Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff|Co2TiSn|55|%|1.0|A large negativemagnetoresistance of 55% is observed for Co2TiSn at room temperature in anapplied magnetic field of 4T which is comparable to the large negativemagnetoresistances of the manganites.|A large negativemagnetoresistance of 55% is observed for Co2TiSn at room temperature in anapplied magnetic field of 4T which is comparable to the large negativemagnetoresistances of the manganites.
Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth|NiFe/IrMn/MgO/Pt|100|%|0.6875|In this paper we demonstrate >100% spin-valve-like signal in aNiFe/IrMn/MgO/Pt stack with an antiferromagnet (AFM) on one side and anon-magnetic metal on the other side of the tunnel barrier.|In this paper we demonstrate >100% spin-valve-like signal in aNiFe/IrMn/MgO/Pt stack with an antiferromagnet (AFM) on one side and anon-magnetic metal on the other side of the tunnel barrier.
Magnetic Field Effects on Transport Properties of PtSn4|Eundeok Mun,Hyunjin Ko,Gordon J. Miller,German D. Samolyuk,Sergey L. Bud'ko,Paul. C. Canfield|PtSn4|5|%|1.0|Single crystals ofPtSn4 exhibit very large transverse magnetoresistance of  5x105% for theac-plane and of  1.4x105% for the b<missing VAR>-axis resistivity at 1.8 K and 140 kOe, aswell as pronounced Shubnikov-de Haas oscillations.|Single crystals ofPtSn4 exhibit very large transverse magnetoresistance of  5x105% for theac-plane and of  1.4x105% for the b<missing VAR>-axis resistivity at 1.8 K and 140 kOe, aswell as pronounced Shubnikov-de Haas oscillations.
Magnetic Field Effects on Transport Properties of PtSn4|Eundeok Mun,Hyunjin Ko,Gordon J. Miller,German D. Samolyuk,Sergey L. Bud'ko,Paul. C. Canfield|PtSn4|5|%|1.0|Single crystals ofPtSn4 exhibit very large transverse magnetoresistance of  5x105% for theac-plane and of  1.4x105% for the b<missing VAR>-axis resistivity at 1.8 K and 140 kOe, aswell as pronounced Shubnikov-de Haas oscillations.|Single crystals ofPtSn4 exhibit very large transverse magnetoresistance of  5x105% for theac-plane and of  1.4x105% for the b<missing VAR>-axis resistivity at 1.8 K and 140 kOe, aswell as pronounced Shubnikov-de Haas oscillations.
Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto|Co/Ge|1995|%|0.5238095238095238|Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometricCo2-based Heusler alloy shows a intense dependency of the tunnelmagnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratiosof up to 1995% at 4.2 K for 1. This work reports on the electronic structure ofnon-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x<missing VAR>  z<missing VAR>  2 0.38.|Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometricCo2-based Heusler alloy shows a intense dependency of the tunnelmagnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratiosof up to 1995% at 4.2 K for 1. This work reports on the electronic structure ofnon-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x<missing VAR>  z<missing VAR>  2 0.38.
Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran|Pr0.6Sr0.4MnO3|25|%|0.00176056338028169|We have investigated magnetization(M), magnetocaloric effect(MCE) andmagnetothermopower(MTEP) in polycrystalline Pr0.6Sr0.4MnO3, which shows asecond-order paramagnetic to ferromagnetic transition near room temperature (T<missing VAR>C 305 K).|The MTEPreaches a maximum value of 25% for deltaH  3 T around T<missing VAR>C which is much higherthan 15% dc magnetoresistance for the same field change.
Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran|Pr0.6Sr0.4MnO3|15|%|0.0034946236559139786|We have investigated magnetization(M), magnetocaloric effect(MCE) andmagnetothermopower(MTEP) in polycrystalline Pr0.6Sr0.4MnO3, which shows asecond-order paramagnetic to ferromagnetic transition near room temperature (T<missing VAR>C 305 K).|The MTEPreaches a maximum value of 25% for deltaH  3 T around T<missing VAR>C which is much higherthan 15% dc magnetoresistance for the same field change.
Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties|Fabrizio Nichele,Yashar Komijani,Szymon Hennel,Thomas Ihn,Klaus Ensslin,Christian Gerl,Werner Wegscheider,Dirk Reuter,Andreas D. Wieck|GaAs/AlGaAs|15|%|0.5|We present low-temperature transport experiments on Aharonov-Bohm (AB) ringsfabricated from two-dimensional hole gases in p<missing VAR>-type GaAs/AlGaAsheterostructures.|Highly visible h/e (up to 15%) and h<missing VAR>/2e<missing VAR> oscillations, presentfor different gate voltages, prove the high quality of the fabricated devices.
Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales|N22K|650|%|0.023480662983425413|Magneticsusceptibility measurements suggest antiferromagnetic (AFM) ordering of momentson divalent Eu ions near T<missing VAR>N22K.|A large increase in themagnetoresistance is observed across the spin-flop, with absolutemagnetoresistance reaching approximately 650% at 5K and 12T.
Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi|IrO2|28|%|1.0|The measurements at liquid nitrogen temperaturerevealed negative magnetoresistances (M<missing VAR>Rs) (up to 28%) for modest magneticfields (250 mT) applied within the IrO2 a-b<missing VAR> plane and electric currents flowingperpendicular to the plane.|The measurements at liquid nitrogen temperaturerevealed negative magnetoresistances (M<missing VAR>Rs) (up to 28%) for modest magneticfields (250 mT) applied within the IrO2 a-b<missing VAR> plane and electric currents flowingperpendicular to the plane.
Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi|Sr2IrO4|-14|%|0.4342105263157895|We tentatively attribute thefour-fold symmetry to the crystalline component of AMR and the field-inducedtransition to the effects of applied field on the canting of AFM<missing VAR>-coupledmoments in Sr2IrO4.|The angular dependence of MR shows a crossover fromfour-fold to two-fold symmetry in response to an increasing magnetic field withangular variations in resistance from 1-14%.
Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi|Sr2IrO4|-0.5|%|0.5|We tentatively attribute thefour-fold symmetry to the crystalline component of AMR and the field-inducedtransition to the effects of applied field on the canting of AFM<missing VAR>-coupledmoments in Sr2IrO4.|The observed AMR is very large compared to the crystallineAM<missing VAR>Rs in 3d transition metal alloys/oxides (0.1-0.5%) and can be associated withthe large spin-orbit interactions in this 5d oxide while the transitionprovides evidence of correlations between electronic transport, magnetic orderand orbital states.
Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures|Soonha Cho,Seung-heon Chris Baek,Younghun Jo,Byong-Guk Park|W/CoFeB/MgO|1|%|1.0|The MR of 1% in W/CoFeB/MgO samples isconsiderably larger than those in other structures of Ta/CoFeB/MgO orPt/Co/AlOx, which indicates a larger spin Hall angle of W.|The MR of 1% in W/CoFeB/MgO samples isconsiderably larger than those in other structures of Ta/CoFeB/MgO orPt/Co/AlOx, which indicates a larger spin Hall angle of W.
Semimetal-semiconductor transition and giant linear magnetoresistances in three-dimensional Dirac semimetal Bi0.96Sb0.04 single crystals|Z. J. Yue,X. L. Wang,S. S. Yan|Bi1-x|4|%|0.7804878048780488|Bismuth-antimonyBi1-xSbx can be tuned from a topological insulator to a band insulator througha quantum critical point at x<missing VAR>  4%, where 3D Dirac fermions appear.|Bismuth-antimonyBi1-xSbx can be tuned from a topological insulator to a band insulator througha quantum critical point at x<missing VAR>  4%, where 3D Dirac fermions appear.
Semimetal-semiconductor transition and giant linear magnetoresistances in three-dimensional Dirac semimetal Bi0.96Sb0.04 single crystals|Z. J. Yue,X. L. Wang,S. S. Yan|Bi0.96Sb0.04|6000|%|0.5|In a magneticfield of 8 T, Bi0.96Sb0.04 single crystals show giant magnetoresistances of upto 6000% at low-temperature, 5 K, and 300% at room-temperature, 300 K.|In a magneticfield of 8 T, Bi0.96Sb0.04 single crystals show giant magnetoresistances of upto 6000% at low-temperature, 5 K, and 300% at room-temperature, 300 K.
Semimetal-semiconductor transition and giant linear magnetoresistances in three-dimensional Dirac semimetal Bi0.96Sb0.04 single crystals|Z. J. Yue,X. L. Wang,S. S. Yan|Bi0.96Sb0.04|300|%|1.0|In a magneticfield of 8 T, Bi0.96Sb0.04 single crystals show giant magnetoresistances of upto 6000% at low-temperature, 5 K, and 300% at room-temperature, 300 K.|In a magneticfield of 8 T, Bi0.96Sb0.04 single crystals show giant magnetoresistances of upto 6000% at low-temperature, 5 K, and 300% at room-temperature, 300 K.
Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2|D. Chen,L. X. Zhao,J. B. He,H. Liang,S. Zhang,C. H. Li,L. Shan,C. Ren,S. C. Wang,Z. A. Ren,G. F. Chen|Ta3S2|8000|%|0.10625|We have investigated the magnetoresistance (MR) and Hall resistivityproperties of the single crystals of tantalum sulfide, Ta3S2, which wasrecently predicted to be a new type II Weyl semimetal.|Large MR (up to 8000%at 2 K and 16 T), field-induced metal-insulator-like transition and nonlinearHall resistivity are observed at low temperatures.
Gate Tunable Magneto-resistance of Ultra-Thin WTe2 Devices|Xin Liu,Zhiran Zhang,Chaoyi Cai,Shibing Tian,Satya Kushwaha,Hong Lu,Takashi Taniguchi,Kenji Watanabe,Robert J. Cava,Shuang Jia,Jian-Hao Chen|WTe2|0|%|0.5|Wealso found that the magnetoresistive behavior of ultra-thin WTe2 devices iswell-captured by a two-fluid model.|According to the model, the change of MRcould be as large as 400,000%, the largest potential change of MR among allmaterials known, if the ultra-thin samples are tuned to neutrality whenpreserving the mobility of 167,000 cm2V-1s<missing VAR>-1 observed in bulk samples.
Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song|YI|3|%|0.08974358974358973|The device is composed of agraphene under two strips of yttrium iron garnet (YIG), where two gate voltagesare applied to cancel the heavy charge doping in the YIG<missing VAR>-induced half-metallicferromagnets.|A colossal magnetoresistance (sim 100times103%) and an extremely largemagnetoresistance (sim 1times106%) have been previously explored inmanganite perovskites and Dirac materials, respectively.
Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song|YI|6|%|0.07971014492753623|The device is composed of agraphene under two strips of yttrium iron garnet (YIG), where two gate voltagesare applied to cancel the heavy charge doping in the YIG<missing VAR>-induced half-metallicferromagnets.|A colossal magnetoresistance (sim 100times103%) and an extremely largemagnetoresistance (sim 1times106%) have been previously explored inmanganite perovskites and Dirac materials, respectively.
Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song|YI|6|%|0.3466666666666667|The device is composed of agraphene under two strips of yttrium iron garnet (YIG), where two gate voltagesare applied to cancel the heavy charge doping in the YIG<missing VAR>-induced half-metallicferromagnets.|By calculations using the Landauer-Bu<missing VAR>ttiker formalism, wedemonstrate that, when a proper gate voltage is applied on the freeferromagnet, changes in resistance up to 305times106% (16times103%)can be achieved at the liquid helium (nitrogen) temperature and in a zeromagnetic field.
Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song|YI|3|%|0.3597560975609756|The device is composed of agraphene under two strips of yttrium iron garnet (YIG), where two gate voltagesare applied to cancel the heavy charge doping in the YIG<missing VAR>-induced half-metallicferromagnets.|By calculations using the Landauer-Bu<missing VAR>ttiker formalism, wedemonstrate that, when a proper gate voltage is applied on the freeferromagnet, changes in resistance up to 305times106% (16times103%)can be achieved at the liquid helium (nitrogen) temperature and in a zeromagnetic field.
Disruption of the accidental Dirac semimetal state in ZrTe$_{5}$ under hydrostatic pressure|J. L. Zhang,C. Y. Guo,X. D. Zhu,L. Ma,G. L. Zheng,Y. Q. Wang,L. Pi,Y. Chen,H. Q. Yuan,M. L. Tian|ZrTe5|3300|%|0.06043956043956044|Both demonstrate that the pressure breaks the accidental Diracnode in ZrTe5.|In the case of H parallel b<missing VAR>, thequasi-linear magnetoresistance decreases drastically from 3300% (9 T) atambient pressure to 400% (14 T) at 2.5 GPa.
Disruption of the accidental Dirac semimetal state in ZrTe$_{5}$ under hydrostatic pressure|J. L. Zhang,C. Y. Guo,X. D. Zhu,L. Ma,G. L. Zheng,Y. Q. Wang,L. Pi,Y. Chen,H. Q. Yuan,M. L. Tian|ZrTe5|400|%|0.136986301369863|Both demonstrate that the pressure breaks the accidental Diracnode in ZrTe5.|In the case of H parallel b<missing VAR>, thequasi-linear magnetoresistance decreases drastically from 3300% (9 T) atambient pressure to 400% (14 T) at 2.5 GPa.
Writing and Reading antiferromagnetic Mn$_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance|S. Yu. Bodnar,L. Šmejkal,I. Turek,T. Jungwirth,O. Gomonay,J. Sinova,A. A. Sapozhnik,H. -J. Elmers,M. Kläui,M. Jourdan|Mn2Au|6|%|0.5|Here we demonstrate for Mn2Au, a good conductor with ahigh ordering temperature suitable for applications, reliable and reproducibleswitching using current pulses and readout by magnetoresistance measurements.|The symmetry of the torques agrees with theoretical predictions and a largeread-out magnetoresistance effect of more than simeq 6% is reproduced byab initio transport calculations.
Shubnikov-de Haas and de Haas-van Alphen oscillations in topological semimetal CaAl4|Sheng Xu,Jian-Feng Zhang,Yi-Yan Wang,Lin-Lin Sun,Huan Wang,Yuan Su,Xiao-Yan Wang,Kai Liu,Tian-Long Xia|CaAl4|3000|%|1.0|CaAl4 exhibits large unsaturatedmagnetoresistance sim3000% at 2.5 K and 14 T.|CaAl4 exhibits large unsaturatedmagnetoresistance sim3000% at 2.5 K and 14 T.
Direct evidence for charge compensation induced large magnetoresistance in thin WTe2|Yaojia Wang,Lizheng Wang,Xiaowei Liu,Heng Wu,Pengfei Wang,Dayu Yan,Bin Cheng,Youguo Shi,Kenji Watanabe,Takashi Taniguchi,Shi-Jun Liang,Feng Miao|WTe2|10600|%|0.5|The MRreaches a maximum (10600%) in thin WTe2 film at certain gate voltage whereelectron and hole concentrations are balanced, indicating that the chargecompensation is the dominant mechanism of the observed large MR.|The MRreaches a maximum (10600%) in thin WTe2 film at certain gate voltage whereelectron and hole concentrations are balanced, indicating that the chargecompensation is the dominant mechanism of the observed large MR.
Linear and quadratic magnetoresistance in the semimetal SiP2|Yuxing Zhou,Zhefeng Lou,ShengNan Zhang,Huancheng Chen,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Hangdong Wang,QuanSheng Wu,Oleg V Yazyev,Minghu Fang|(FS)|4|%|0.09595959595959595|Good agreement of the experimental results with the simulationsbased on the calculated Fermi surface (FS) indicates that the topology of FSplays an important role in its MR.|For the H parallel [101] orientation, an unsaturated nearly quadratic Hdependence of MR up to 5.88 times 104% (at 1.8 K, 31.2 T) andfield-induced up-turn behavior in resistivity were observed, which wassuggested due to the existence of hole open orbits extending along the kxdirection.
Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2|Qin Chen,Zhefeng Lou,ShengNan Zhang,Binjie Xu,Yuxing Zhou,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang|MoO2|4|%|0.5641025641025641|It was found that alarge magnetoresistance reaching 5.03x104% at 2 K and 9 T, its nearlyquadratic field dependence and a field-induced up-turn behavior of rhoxx(T),the characteristics common for many topologically non-trivial as well astrivial semimetals, emerge also in MoO2.|It was found that alarge magnetoresistance reaching 5.03x104% at 2 K and 9 T, its nearlyquadratic field dependence and a field-induced up-turn behavior of rhoxx(T),the characteristics common for many topologically non-trivial as well astrivial semimetals, emerge also in MoO2.
Magnetotransport properties of the topological nodal-line semimetal CaCdSn|Antu Laha,Sougata Mardanya,Bahadur Singh,Hsin Lin,Arun Bansil,Amit Agarwal,Z. Hossain|CaCdSn|3|%|0.09322033898305085|We also briefly discuss possible reasons behind such a large quasilinearmagnetoresistance and its connection with the nontrivial band structure ofCaCdSn.|We observe an extremely large and quasilinear non-saturatingtransverse as well as longitudinal magnetoresistance (MR) at low temperatures(approx 7.44times 103 % and approx 1.71times 103%, respectively, at4K).
Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia|SO|164|%|1.0|Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.|Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.
Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia|SO|7|%|0.017006802721088437|Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.|Device initialization variation inswitching voltage is shown to be curtailed to 7% by controlling the D<missing VAR>W initialposition, which we show corresponds to 96% accuracy in a D<missing VAR>W-MTJ full addersimulation.
Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia|SO|96|%|0.014285714285714285|Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.|Device initialization variation inswitching voltage is shown to be curtailed to 7% by controlling the D<missing VAR>W initialposition, which we show corresponds to 96% accuracy in a D<missing VAR>W-MTJ full addersimulation.
Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang|H1.90|3|%|0.35294117647058826|For emphH applied along the direction of 15circ relative to the emphc<missing VAR>axis, an unsaturated emphH1.90 dependence of MR up to9.43times103% at 10K and 9T<missing VAR> was observed, which was explained bythe existence of electron open orbits extending along the kx direction.|For emphH applied along the direction of 15circ relative to the emphc<missing VAR>axis, an unsaturated emphH1.90 dependence of MR up to9.43times103% at 10K and 9T<missing VAR> was observed, which was explained bythe existence of electron open orbits extending along the kx direction.
Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar|Mn2Au|0.6|%|0.1836734693877551|Here, we report on thein-plane reflectivity anisotropy of Mn2Au (001) films, which were Ne<missing VAR>elvector aligned in pulsed magnetic fields.|In the near-infrared, the anisotropyis approx 0.6%, with higher reflectivity for the light polarized along theNe<missing VAR>el vector.
Ultimate In-plane Magnetoresistance Ratio of Graphene by Controlling the Gapped Dirac Cone through Pseudospin|Yusuf Wicaksono,Halimah Harfah,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabe|F0.2|1450|%|0.23369565217391305|Thetransmission probability calculation for the in-plane conductance of the systemindicated that the antiparallel configuration would result in nearly zeroconductance of E-EF0.2 e<missing VAR>V.|A comparison of the transmission probabilities ofthe antiparallel and parallel configurations indicated that a highmagnetoresistance of 1450% could be achieved.
Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel|GdBi|4|%|0.00985663082437276|Single crystal of the binary equi-atomic compound GdBi crystallizing in therock salt type cubic crystal structure with the space group Fmbar3m<missing VAR> hasbeen grown by flux method.|Themagneto resistance attains a value of 1.0times104% with no sign ofsaturation, in a field of 14T<missing VAR>, at T<missing VAR>  2K.
Consecutive topological phase transitions and colossal magnetoresistance in a magnetic topological semimetal|Feng Du,Lin Yang,Zhiyong Nie,Ninghua Wu,Yong Li,Shuaishuai Luo,Ye Chen,Dajun Su,Michael Smidman,Youguo Shi,Chao Cao,Frank Steglich,Yu Song,Huiqiu Yuan|EuCd2As2|5|%|0.5|First-principles calculations reveal that the dramatic evolutionof the resistivity under pressure is due to consecutive transitions ofEuCd2As2 from a magnetic topological insulator to a trivial insulator,and then to a Weyl semimetal, with the latter resulting from a pressure-inducedchange in the magnetic ground state.|The insulating state can be fullysuppressed by a small magnetic field, leading to a colossal negativemagnetoresistance on the order of 105%, accessible via a modest field ofsim0.2T<missing VAR>.
Magnetoresistive behaviour of ternary Cu-based materials processed by high-pressure torsion|M. Kasalo,S. Wurster,M. Stückler,M. Zawodzki,L. Weissitsch,R. Pippan,A. Bachmaier|Cu62Fe19Ni19|2.45|%|1.0|The highest drop in room temperature resistivity (2.45% at 1790k<missing VAR>A/m) was found in Cu62Fe19Ni19 after annealing for 1 h at 400 degC.|The highest drop in room temperature resistivity (2.45% at 1790k<missing VAR>A/m) was found in Cu62Fe19Ni19 after annealing for 1 h at 400 degC.
Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3|Teresa Tschirner,Berengar Leikert,Felix Kern,Daniel Wolf,Axel Lubk,Martin Kamp,Kirill Miller,Fabian Hartmann,Sven Höfling,Bernd Büchner,Joseph Dufouleur,Marc Gabay,Michael Sing,Ralph Claessen,Louis Veyrat|SrTiO3|6500|%|0.25|Here, linear positive magnetoresistance caused bymagnetic texture is reported in chLaTiO3/chSrTiO3 heterostructures.|TheLMR amplitude reaches up to 6500% at 9T.
Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji|PrTi2Al20|3|%|0.6818181818181818|In the FQ<missing VAR>ordered phase, PrTi2Al20 displays extremely large magnetoresistance(XMR) of sim 103%.|In the FQ<missing VAR>ordered phase, PrTi2Al20 displays extremely large magnetoresistance(XMR) of sim 103%.
Metal-Insulator Transition and Ferromagnetism in the Electron Doped Layered Manganites La2.3-xYxCa0.7Mn2O7 (x=0,0.3,0.5)|P. Raychaudhuri,C. Mitra,A. Paramekanti,R. Pinto,A. K. Nigam,S. K. Dhar|La1.8Y0.5Ca0.7Mn2O7|94|%|0.5|It is found thatLa1.8Y0.5Ca0.7Mn2O7 has tetragonal structure and is a metallic ferromagnet witha magnetic transition temperature of 170 K.|The compound shows metallicbehavior below 140 K and has a large magnetoresistance (MR)Delta-rho/rho(0)94% at 100 K at 34 kOe.
Dependence of Magnetic Anisotropy and Magnetoresistance of Ni81Fe19-Films on Annealing|T. Lorenz,A. Kaeufler,Y. Luo,M. Moske,K. Samwer|Ni81Fe19|8|%|0.0640495867768595|Dependence of Magnetic Anisotropy and Magnetoresistance of Ni81Fe19-Films on Annealing.|The AMR along the formermagnetically easy axis as well as the corresponding field sensitivity areincreased by a heat treatment around 700K reaching maxima of about 8% and amaximum sensitivity of 1.5%/Oe, respectively.
Dependence of Magnetic Anisotropy and Magnetoresistance of Ni81Fe19-Films on Annealing|T. Lorenz,A. Kaeufler,Y. Luo,M. Moske,K. Samwer|Ni81Fe19|1.5|%|0.0673828125|Dependence of Magnetic Anisotropy and Magnetoresistance of Ni81Fe19-Films on Annealing.|The AMR along the formermagnetically easy axis as well as the corresponding field sensitivity areincreased by a heat treatment around 700K reaching maxima of about 8% and amaximum sensitivity of 1.5%/Oe, respectively.
Current dependence of grain boundary magnetoresistance in La_0.67Ca_0.33MnO_3 films|W. Westerburg,F. Martin,S. Friedrich,M. Maier,G. Jakob|La0.67Ca0.33MnO3|70|%|0.03333333333333333|Current dependence of grain boundary magnetoresistance in La0.67Ca0.33MnO3 films.|At lowtemperatures hysteretic changes in resistivity up to 70% due to switching ofmagnetic domains at the coercitive field are observed.
Negative Magnetoresistance of Bi_2Sr_2CuO_x Single Crystals in a Strong Magnetic Fields|S. I. Vedeneev,A. G. M. Jansen,B. A. Volkov,P. Wyder|Bi2Sr2CuO|60|%|0.029850746268656716|Magnetoresistance (MR) in the out-of-plane resistivity rhoc<missing VAR> for thenormal state of the one-layer high-quality Bi2Sr2CuOx<missing VAR> single crystals undervarious dc magnetic fields up to 28 T over the temperature region 6-100 K hasbeen measured.|We observed the anomalously large negative longitudinal MR up to60%.
Direct measurement of polaron binding energy in AMnO$_{3}$ as a function of the A site ionic size by photoinduced IR absorption|T. Mertelj,M. Hrovat,D. Kuščer,D. Mihailovic|(NdMn)1|44|%|0.38235294117647056|Photoinduced IR<missing VAR> absorption was measured in undoped (LaMn)1-deltaO3 and(NdMn)1-deltaO3.|We observe broadening and a 44% increase of themidinfrared anti-Jahn-Teller polaron peak energy when La3 is replaced withsmaller Nd3.
Enhancement of magnetoresistance in manganite multilayers|A. Venimadhav,M. S. Hegde,V. Prasad,S. V. Subramanyam|LaAlO3|98|%|0.19318181818181818|All the multilayers were grown on LaAlO3 (100) by pulse laser deposition.|Anenhanced magnetoresistnace (defined (R<missing VAR>H- R<missing VAR>0)/R<missing VAR>0) of more than 98% is observedin these multilayers.
Enhancement of magnetoresistance in manganite multilayers|A. Venimadhav,M. S. Hegde,V. Prasad,S. V. Subramanyam|LaAlO3|41|%|0.15492957746478872|All the multilayers were grown on LaAlO3 (100) by pulse laser deposition.|Also a low field magnetoresistance of 41% at 5000 Oe isobserved in these multilayer films.
Fermi Surface Nesting and Nanoscale Fluctuating Charge/Orbital Ordering in Colossal Magnetoresistive Oxides|Y. -D. Chuang,A. D. Gromko,D. S. Dessau,T. Kimura,Y. Tokura|La1.2Sr1.8Mn2O7|90|%|0.1118421052631579|We used high resolution angle-resolved photoemission spectroscopy to revealthe Fermi surface and key transport parameters of the metallic state of thelayered Colossal Magnetoresistive (CMR) oxide La1.2Sr1.8Mn2O7.|This discrepancy can beaccounted for by including the pseudogap which removes at least 90% of thespectral weight at the Fermi energy.
Non-volatile magnetoresistive memory in phase separated La$_{0.325}$Pr$_{0.300}$Ca$_{0.375}$MnO$_3$|P. Levy,F. Parisi,M. Quintero,L. Granja,J. Curiale,J. Sacanell,G. Leyva,G. Polla,R. S. Freitas,L. Ghivelder|MnO3|80|%|0.1464968152866242|We have measured magnetic and transport response on the polycrystallineLa5/8-yPryCa3/8MnO3 (y<missing VAR>0.30, average grain size 2 microns)compound.|The colossal magnetoresistance figures obtained (about 80%)are determined by the fraction enlargement mechanism.
Anisotropic Magnetoresistance in Ga$_{1-x}$Mn$_x$As|David V. Baxter,Dmitry Ruzmetov,Julia Scherschligt,Y. Sasaki,X. Liu,J. K. Furdyna,C. H. Mielke|Ga1-xMn|5|%|0.08858267716535433|We have measured the magnetoresistance in a series of Ga1-xMnx<missing VAR>Assamples with 0.033le x<missing VAR> le 0.053 for three mutually orthogonal orientationsof the applied magnetic field.|the sample resistance is higher when itsmagnetization is perpendicular to the measuring current than when the two areparallel) and has a magnitude on the order of 5% at temperatures near 10K andbelow.
Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs|Fe/ZnSe/Fe|100|%|0.023529411764705882|We present it ab initio calculations of the spin-dependent electronictransport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situationof a spin-injection experiment.|We show that the bulkband structure of the leads and of the semiconductor, and even more theelectronic structure of a clean and abrupt interface, are responsible for acurrent polarisation and a magnetoresistance ratio of almost the ideal 100%, ifthe transport is ballistic.
Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger|MgB2|12|%|0.05269607843137254|We synthesized polycrystalline MgB2 from a stoichiometric mixture of Mg andthe 11 B isotope under different conditions.|A residual resistivity ratio (RRR) of  5.8, and amagnetoresistance (MR), at 40 K, of 12% were obtained for these samples.
Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth|(MnAs)|30|%|1.0|This is indicated by a large tunneling magnetoresistance (up to 30%) at lowtemperatures in epitaxial magnetic tunnel junctions composed of a ferromagneticmetal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by anonmagnetic semiconductor (AlAs).|This is indicated by a large tunneling magnetoresistance (up to 30%) at lowtemperatures in epitaxial magnetic tunnel junctions composed of a ferromagneticmetal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by anonmagnetic semiconductor (AlAs).
Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong|Nd0.67|33|%|1.0|A magnetoresistance (MR) ashigh as  33% is observed for Nd0.67 Sr0.33 MnO3 bulk at themetal-insulator transition (MIT) temperature (Tp) of 273 K in a magnetic field(H) of 10 kOe.|A magnetoresistance (MR) ashigh as  33% is observed for Nd0.67 Sr0.33 MnO3 bulk at themetal-insulator transition (MIT) temperature (Tp) of 273 K in a magnetic field(H) of 10 kOe.
Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong|(H)|90|%|0.08333333333333333|A magnetoresistance (MR) ashigh as  33% is observed for Nd0.67 Sr0.33 MnO3 bulk at themetal-insulator transition (MIT) temperature (Tp) of 273 K in a magnetic field(H) of 10 kOe.|MR as highas  90% is observed for thin film (x<missing VAR>  0.05) at H  10 kOe with Tp  100 Kwhile the corresponding bulk has a MR of only  43%.
Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong|(H)|43|%|0.06666666666666667|A magnetoresistance (MR) ashigh as  33% is observed for Nd0.67 Sr0.33 MnO3 bulk at themetal-insulator transition (MIT) temperature (Tp) of 273 K in a magnetic field(H) of 10 kOe.|MR as highas  90% is observed for thin film (x<missing VAR>  0.05) at H  10 kOe with Tp  100 Kwhile the corresponding bulk has a MR of only  43%.
Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski|Co/AlO|100|%|1.0|Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.|Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.
Giant magnetic-field changes in radio-frequency absorption in La$_{0.67}$Sr$_{0.33}$MnO$_3$ near the Curie temperature|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,E. Yu. Beliayev,A. S. Panfilov,J. Fink-Finowicki|La0.67Sr0.33MnO3|67|%|0.029874213836477984|The D<missing VAR>C transport properties of and the radio-frequency (R<missing VAR>F) wave absorption(at 2.525 MHz) in a sample of La0.67Sr0.33MnO3 prepared byfloating-zone method are measured.|Relative change of the R<missing VAR>Fabsorption in magnetic field (magnetoabsorption) is about 67% in field 2.1 kOeand about 55% in field 1 kOe.
Giant magnetic-field changes in radio-frequency absorption in La$_{0.67}$Sr$_{0.33}$MnO$_3$ near the Curie temperature|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,E. Yu. Beliayev,A. S. Panfilov,J. Fink-Finowicki|La0.67Sr0.33MnO3|55|%|0.040616246498599434|The D<missing VAR>C transport properties of and the radio-frequency (R<missing VAR>F) wave absorption(at 2.525 MHz) in a sample of La0.67Sr0.33MnO3 prepared byfloating-zone method are measured.|Relative change of the R<missing VAR>Fabsorption in magnetic field (magnetoabsorption) is about 67% in field 2.1 kOeand about 55% in field 1 kOe.
Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu|O/YS|0.75|%|1.0|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu|O/YS|1.25|%|1.0|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu|O/YS|4.5|%|1.0|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu|YS|13|%|1.0|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu|YS|15|%|1.0|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu|YS|80|%|1.0|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.|The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li|YS|20|%|0.059006211180124224|While full cube-on-cube epitaxy was achieved for the YSZ<missing VAR> layer, thetop manganite layer was multi-domain-oriented, with a coexistence ofcube-on-cube and cube-on-diagonal epitaxy.|The film shows a resistance change of 20% in amagnetic field <1000 Oe at 50 K, which is promising for real applications.
Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross|O(3-x)|5|%|0.31896551724137934|Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).|Junctions with a Ni counter electrode and an aluminium oxidebarrier showed reproducibly a tunneling magnetoresistance (TMR) effect at roomtemperature of up to 5% with almost ideal switching behavior.
Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper|EuO|0.6|%|0.42857142857142855|Theresults suggest that the inhomogeneity in 0.6% Gd doped EuO is linked tocolossal magnetoresistance.|Theresults suggest that the inhomogeneity in 0.6% Gd doped EuO is linked tocolossal magnetoresistance.
Magnetic-field-induced Fermi surface reconstruction in Na$_{0.5}$CoO$_2$|L. Balicas,M. Abdel-Jawad,N. E. Hussey,F. C. Chou,P. A. Lee|(FS)|25|%|0.20689655172413793|These small Fermi surface (FS) pockets indicate that most ofthe original FS vanishes at the charge ordering (CO) transition.|25% of the area of the orthorhombicBrillouin zone.
The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik|Cu3/Cu2|80|%|1.0|The x<missing VAR> 0.15 sample shows the highest MR(80%), which might result from theco-existence of Cu3/Cu2 and the dilution effect of Cu-doping on the doubleexchange interaction.|The x<missing VAR> 0.15 sample shows the highest MR(80%), which might result from theco-existence of Cu3/Cu2 and the dilution effect of Cu-doping on the doubleexchange interaction.
Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau|O3-d|30|%|0.020531400966183576|The magnetic and magnetotransport properties of the oxygen deficientperovskites, SrCo1-xMxO3-d with M<missing VAR>  Nb and Ru, were investigated.|It is demonstrated that thereexists a strong competition between ferromagnetism and spin glass state, whereCo4 induces ferromagnetism, whereas Nb or Ru substitution at the cobalt sitesinduces magnetic disorder, and this particular magnetic behavior is the originof large negative magnetoresistance of these oxides, reaching up to 30% at 5 Kin 7 T.
Magnetocapacitance effect in perovskite-superlattice based multiferroics|M. P. Singh,W. Prellier,Ch. Simon,B. Raveau|BaTiO3|30|%|0.7777777777777778|D<missing VAR>C electrical studies of films show that themagnetoresistance (MR) is dependent on the BaTiO3 thickness and negativeMR as high as 30% at 100K are observed.|D<missing VAR>C electrical studies of films show that themagnetoresistance (MR) is dependent on the BaTiO3 thickness and negativeMR as high as 30% at 100K are observed.
Magnetocapacitance effect in perovskite-superlattice based multiferroics|M. P. Singh,W. Prellier,Ch. Simon,B. Raveau|BaTiO3|3|%|0.18388429752066116|D<missing VAR>C electrical studies of films show that themagnetoresistance (MR) is dependent on the BaTiO3 thickness and negativeMR as high as 30% at 100K are observed.|A negative magnetocapacitance value in the filmas high as 3% per tesla at 1kHz and 100K is demonstrated, opening the route fordesigning novel functional materials.
Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss|CoFeB|50|%|0.14858490566037735|the thicknessdifference of the two CoFeB layers.|Used as a soft electrode in a magnetic tunneljunction, a high tunneling magnetoresistance of about 50%, a well definedplateau and a rectangular switching behavior is achieved.
Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai|MgO|150|%|1.0|We present spin transfer switching results for MgO based magnetic tunnelingjunctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to150% and low intrinsic switching current density of 2-3 x<missing VAR> 10 MA/cm2.|We present spin transfer switching results for MgO based magnetic tunnelingjunctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to150% and low intrinsic switching current density of 2-3 x<missing VAR> 10 MA/cm2.
Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno|Co40Fe40B20/MgO/Co40Fe40B20|49|%|0.4528301886792453|Current-driven magnetization switching in low-resistanceCo40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported.|Thecritical-current densities Jc required for current-driven switching in samplesannealed at 270C and 300C are found to be as low as 7.8 x 105 A/cm2 and 8.8 x105 A/cm2 with accompanying tunnel magnetoresistance (TMR) ratios of 49% and73 %, respectively.
Effect of ferroelectric layers on the magnetocapacitance properties of superlattices-based oxide multiferroics|M. P. Singh,W. Prellier,L. Mechin,W. Prellier|SrTiO3|30|%|0.04032258064516129|A series of superlattices composed of ferromagneticLa0.7Ca0.3MnO3 (LCMO) and ferroelectric/paraelectricBa1-xSrx<missing VAR>TiO3 (0leq x<missing VAR>leq 1) were deposited on SrTiO3substrates using the pulsed laser deposition.|Magnetotransport properties of the films reveal a ferromagnetic Curietemperature in the range of 145-158 K and negative magnetoresistance as high as30%, depending on the type of ferroelectric layers employed for their growth(QTRiti.e.
Effect of ferroelectric layers on the magnetocapacitance properties of superlattices-based oxide multiferroics|M. P. Singh,W. Prellier,L. Mechin,W. Prellier|SrTiO3|3|%|0.06652360515021459|A series of superlattices composed of ferromagneticLa0.7Ca0.3MnO3 (LCMO) and ferroelectric/paraelectricBa1-xSrx<missing VAR>TiO3 (0leq x<missing VAR>leq 1) were deposited on SrTiO3substrates using the pulsed laser deposition.|Moreimportantly, the multiferroic nature of the film is determined by theappearance of negative magnetocapacitance, which was found to be maximum aroundthe ferroelectric transition temperature (3% per QTRittesla).
Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d: Predominant role of oxygen nonstoichiometry and magnetic phase separation|T. Motohashi,B. Raveau,M. Hervieu,A. Maignan,V. Pralong,N. Nguyen,V. Caignaert|(F)|80|%|0.1527777777777778|Ac-susceptibility measurements show that there exists a strongcompetition between ferromagnetic (F) and spin glass states, and the balancebetween these two magnetic states can be controlled by varying cobalt (x)and/or oxygen contents (d).|This oxide system exhibitsa giant magnetoresistance (GMR) effect at low temperatures, reaching up to 80%in 7 T at 5 K.
Positive and negative magnetocapacitance in magnetic nanoparticle systems|G. Lawes,R. Tackett,O. Masala,B. Adhikary,R. Naik,R. Seshadri|Fe2O3|0.4|%|0.03571428571428571|The dielectric properties of MnFe2O4 and gamma-Fe2O3 magneticnanoparticles embedded in insulating matrices were investigated.|The samplesshowed frequency dependent dielectric anomalies coincident with the magneticblocking temperature and significant magnetocapacitance above this blockingtemperature, as large as 0.4% at H  10kOe.
Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique|M. J. Zhang,J. Li,Z. H. Peng,D. N. Zheng,A. Z. Jin,C. Z. Gu|(FIB)|60|%|0.07608695652173914|e<missing VAR> have developed a simple process to obtain large magnetoresistance (MR) inperovskite manganite thin films by a combination of focused ion beam (FIB)milling and 120 keV H2 ion implantation.|Using this method, in a magnetic field of 5 T we can get aMR>60% over a 230 K temperature scope, with a maximum value of 95% ataround 70 K.
Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique|M. J. Zhang,J. Li,Z. H. Peng,D. N. Zheng,A. Z. Jin,C. Z. Gu|(FIB)|95|%|0.10507246376811594|e<missing VAR> have developed a simple process to obtain large magnetoresistance (MR) inperovskite manganite thin films by a combination of focused ion beam (FIB)milling and 120 keV H2 ion implantation.|Using this method, in a magnetic field of 5 T we can get aMR>60% over a 230 K temperature scope, with a maximum value of 95% ataround 70 K.
Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider|MgO|37|%|1.0|Polycrystalline Heusler films combinedwith MgO barriers are incorporated into magnetic tunnel junctions and yield 37%magnetoresistance at room temperature.|Polycrystalline Heusler films combinedwith MgO barriers are incorporated into magnetic tunnel junctions and yield 37%magnetoresistance at room temperature.
Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian|Co2Cr0.6Fe0.4Al|54|%|1.0|From the Julliere model a spin polarisation ofCo2Cr0.6Fe0.4Al of 54% at T<missing VAR>4K is deduced.|From the Julliere model a spin polarisation ofCo2Cr0.6Fe0.4Al of 54% at T<missing VAR>4K is deduced.
Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski|Co60Fe20B20/MgO/Co60Fe20B20|30|%|0.010673234811165846|Here we present direct measurements of boththe magnitude and direction of the spin torque in Co60Fe20B20/MgO/Co60Fe20B20MTJs.|The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel|CoFe2O4|-18|%|0.05246913580246913|CoFe2O4tunnel barriers therefore provide a model system to investigate spin filteringin a wide range of temperatures.|Spin polarized transport measurements reveal significant TMRvalues of -18% at 2 K and -3% at 290 K.
Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel|CoFe2O4|-3|%|0.027777777777777776|CoFe2O4tunnel barriers therefore provide a model system to investigate spin filteringin a wide range of temperatures.|Spin polarized transport measurements reveal significant TMRvalues of -18% at 2 K and -3% at 290 K.
Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts|S. Krompiewski|CN|50|%|0.06458333333333334|The calculations show that, atroom temperature, the shot noise of the CNT<missing VAR> FET is Poissonian in thesub-threshold region, whereas in elevated gate and drain/source voltage regionsthe Fano factor gets strongly reduced.|In particular, one observes quite a large tunnel magnetoresistance, whoseabsolute value may exceed 50%.
Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites|Asish K. Kundu,R. Ranjith,V. Pralong,V. Caignaert,B. Raveau|Mn3/Mn4|0.25|%|0.5|These phenomena are interpreted by means of electronic phaseseparation, where the ferromagnetic Mn4/Ni2 and Mn4/Co2 interactionsreinforce the Mn3/Mn4 interactions by super-exchange interaction.|Thedielectric measurements below the magnetic transition temperatures exhibit weakmagneto-dielectric effect of around 0.25% at 80K, which may be due tospin-lattice interaction.
Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono|Cr/Ag/Cr|8.6|%|0.026595744680851064|The bottom CM<missing VAR>S layer was epitaxially grownon the Cr/Ag/Cr buffer layers and was ordered to the L<missing VAR>21 structure afterannealing at 673 K.|The highestMR ratios of 8.6% and 30.7% for CPP-GMR were recorded at room temperature and 6K, respectively.
Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono|Cr/Ag/Cr|30.7|%|0.012626262626262626|The bottom CM<missing VAR>S layer was epitaxially grownon the Cr/Ag/Cr buffer layers and was ordered to the L<missing VAR>21 structure afterannealing at 673 K.|The highestMR ratios of 8.6% and 30.7% for CPP-GMR were recorded at room temperature and 6K, respectively.
Unusual Magnetic, Thermal, and Transport Behaviors of Single Crystal EuRh2As2|Yogesh Singh,Y. Lee,B. N. Harmon,D. C. Johnston|EuRh2As2|38|%|0.004662004662004662|An antiferromagnetic transition is observed in single crystal EuRh2As2 at ahigh temperature T<missing VAR>N  47 K compared to the ferromagnetic Weiss temperaturetheta  12 K.|A dramaticmagnetic field-induced reduction of the electronic specific heat coefficient at1.8-5.0 K by 38% at 9 T is observed.
The observation of a positive magnetoresistance and close correlation among lattice, spin and charge around TC in antipervoskite SnCMn3|B. S. Wang,P. Tong,Y. P. Sun,X. B. Zhu,W. H. Song,Z. R. Yang,J. M. Dai|SnCMn3|11|%|0.5|The temperature dependences of magnetization, electrical transport, andthermal transport properties of antiperovskite compound SnCMn3 have beeninvestigated systematically.|A positive magnetoresistance (11%) is observedaround the ferrimagnetic-paramagnetic transition (T<missing VAR>C  280 K) in the field of50 k<missing VAR>Oe, which can be attributed to the field-induced magnetic phase transition.
Multiple Localized States and Magnetic Orderings in Partially Open Zigzag Carbon Nanotube Superlattices: An Ab Initio Study|Bing Huang,Zuanyi Li,Young-Woo Son,Gunn Kim,Wenhui Duan,Jisoon Ihm|CN|100|%|1.0|We demonstrate that, as a proof of principle, somepartially open zigzag CNT<missing VAR> superlattices are by themselves giant (100%)magnetoresistive devices.|We demonstrate that, as a proof of principle, somepartially open zigzag CNT<missing VAR> superlattices are by themselves giant (100%)magnetoresistive devices.
Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells|Yanhua Dai,R. R. Du,L. N. Pfeiffer,K. W. West|FWH|300|%|0.5263157894736842|Such a spike issuperposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO)but having an amplitude > 300% of the MIRO, and a typical FWHM<missing VAR> 50 m<missing VAR>K,comparable with the Landau level width.|Such a spike issuperposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO)but having an amplitude > 300% of the MIRO, and a typical FWHM<missing VAR> 50 m<missing VAR>K,comparable with the Landau level width.
Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda|As1-xP|9|%|0.16129032258064516|In sharp contrast to the superconducting T<missing VAR> phase ofAFe2(As1-xPx)2 (A Ba, Sr), where the anomalous non-Fermiliquid transport properties are observed, the resistivity, Hall coefficient,and magnetoresistance data in the Ca-based system all indicate that thestandard Fermi liquid behaviors are recovered abruptly below T<missing VAR>rm cT, andthe superconductivity disappears completely.|The c<missing VAR>-axis shrinks by sim9% below T<missing VAR>rmcT, which substantially diminishes the interband nesting between the hole andelectron bands.
Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen|K0.86Fe2Se1.82|100|%|0.10714285714285714|Thecrystals show quite high resistivity in the normal state of more than 160m<missing VAR>Omega cm and 1300 mOmega cm maximum resistivity forK0.86Fe2Se1.82 and Cs0.86Fe1.66Se2 single crystals,respectively.|The crystals show the onsetsuperconducting transition temperatures (T<missing VAR>rm c) of 31 K and 30 K for K-and Cs-compounds, respectively, with nearly 100% shielding fraction.
Giant Positive Magnetoresistance in Co@CoO Nanoparticle Arrays|Hui Xing,Wenjie Kong,Chaehyun Kim,Sheng Peng,Shouheng Sun,Zhu-An Xu,Hao Zeng|CoCoO|400|%|0.16666666666666666|We report the magnetotransport properties of self-assembled CoCoOnanoparticle arrays at temperatures below 100 K.|A giant positive magnetoresistance of >1,400% is observed at 10K,which decreases with increasing temperature.
Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam|(H)|21|%|0.1590909090909091|The metamagnetic transition in M<missing VAR>(H) isothermsbecomes very prominent in x<missing VAR>2 and vanishes for x<missing VAR>3 and 4. A maximum positivemagnetic entropy change of 14.2 J/kg K is observed for x<missing VAR>2 at 288 K for 50 kOe.|Maximumnegative magnetoresistance of 21% has been obtained for x<missing VAR>2 at 50 kOe.
High magnetoresistance in graphene nanoribbon heterojunction|S. Bala Kumar,M. B. A. Jalil,S. G. Tan|SC|100|%|0.125|In the heterostructure, the transmissionacross the first subband of the SC-aGNR and M<missing VAR>-aGNR is forbidden under zeromagnetic-field, due to the orthogonality of the wavefunctions.|Finally, we design amagnetic-field-effect-transistor which yields a MR of close to 100%(85%) atlow(room) temperature.
High magnetoresistance in graphene nanoribbon heterojunction|S. Bala Kumar,M. B. A. Jalil,S. G. Tan|SC|85|%|0.125|In the heterostructure, the transmissionacross the first subband of the SC-aGNR and M<missing VAR>-aGNR is forbidden under zeromagnetic-field, due to the orthogonality of the wavefunctions.|Finally, we design amagnetic-field-effect-transistor which yields a MR of close to 100%(85%) atlow(room) temperature.
Observation of large positive magnetoresistance and its sign reversal in GdRhGe|Sachin Gupta,K. G. Suresh,A. K. Nigam|GdRhGe|48|%|0.09276729559748427|Magnetic properties, heat capacity and magnetoresistance (MR) ofpolycrystalline GdRhGe are investigated.|MR is found to show sign reversal just below T<missing VAR>1 and attains a largepositive value of 48% at 2 K for 50 kOe.
Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li|(Co)|28.5|%|0.1292134831460674|We report the effect of the substrate temperature on the magnetoresistance(MR) of the C60-based spin valve (SV) devices with the sandwich configurationof La0.67Sr0.33MnO3 (LSMO)/C60/cobalt (Co).|And more interesting, an especially large MR (28.5%) were obtainedin the device fabricated at higher substrate temperature, while for the othertypes of devices, the MR magnitudes were just about a few percent.
Large low-temperature magnetoresistance in SrFe2As2 single crystals|S. V. Chong,G. V. M. Williams,J. Kennedy,F. Fang,J. L. Tallon,K. Kadowaki|SrFe2As2|1600|%|1.0|We present the first report on a large low-temperature magnetoresistance (MR)of more than 1600% in a SrFe2As2 single crystal and 1300% in a low-energy Caion-implanted SrFe2As2 single crystal that occurs before the emergence ofcrystallographic strain-induced bulk superconductivity arising from a sampleaging effect.|We present the first report on a large low-temperature magnetoresistance (MR)of more than 1600% in a SrFe2As2 single crystal and 1300% in a low-energy Caion-implanted SrFe2As2 single crystal that occurs before the emergence ofcrystallographic strain-induced bulk superconductivity arising from a sampleaging effect.
Large low-temperature magnetoresistance in SrFe2As2 single crystals|S. V. Chong,G. V. M. Williams,J. Kennedy,F. Fang,J. L. Tallon,K. Kadowaki|SrFe2As2|1300|%|1.0|We present the first report on a large low-temperature magnetoresistance (MR)of more than 1600% in a SrFe2As2 single crystal and 1300% in a low-energy Caion-implanted SrFe2As2 single crystal that occurs before the emergence ofcrystallographic strain-induced bulk superconductivity arising from a sampleaging effect.|We present the first report on a large low-temperature magnetoresistance (MR)of more than 1600% in a SrFe2As2 single crystal and 1300% in a low-energy Caion-implanted SrFe2As2 single crystal that occurs before the emergence ofcrystallographic strain-induced bulk superconductivity arising from a sampleaging effect.
Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao|ZnO|4.86|%|0.76|The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.|The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.
Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao|ZnO|6.05|%|0.8421052631578947|The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.|The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.
Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$|J. Ravichandran,C. R. Serrao,D. K. Efetov,D. Yi,Y. S. Oh,S. -W. Cheong,R. Ramesh,P. Kim|(SIO)|10|%|0.5|Electric field effect (EFE) controlled magnetoelectric transport in thinfilms of undoped and La-doped Sr2IrO4 (SIO) were investigated underthe action of ionic liquid gating.|Despite large carrier density modulation,the temperature dependent resistance measurements exhibit insulating behaviorin chemically and EFE doped samples with the band filling up to 10%.
Large linear magnetoresistance in the Dirac semimetal TlBiSSe|Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando|TlBiSSe|0|%|0.32882882882882886|Ouranalysis of the magnetotransport data points to the possibility that the linearMR is fundamentally governed by the Hall field; although such a situation hasbeen predicted for highly-inhomogeneous systems, inhomogeneity does not seem toplay an important role in TlBiSSe.|Moreover, we observed very large linear magnetoresistance (MR)approaching 10,000% in 14 T at 1.8 K, which diminishes rapidly above 30 K.
Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators|Chandra Shekhar,Erik Kampert,Tobias Foerster,Binghai Yan,Ajaya K. Nayak,Michael Nicklas,Claudia Felser|LuPtBi|2000|%|0.16666666666666666|Both the compounds show semi-metallic behaviorwith low charge carrier of 6 x1018 cm-3 for YPtBi and 8 x1019 cm-3 for LuPtBiat 2 K.|Most importantly, these compounds show very high unsaturatedlinear magnetoresistance of approximately 2000% at 10 K in a magnetic field of60 T<missing VAR>.
Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel|GdSi|415|%|0.3125|Here weshow that antiferromagnetic (AFM) GdSi metal displays an anisotropic positiveMR value (PMRV), up to sim 415%, accompanied by a large negative thermalvolume expansion (NTVE).|Here weshow that antiferromagnetic (AFM) GdSi metal displays an anisotropic positiveMR value (PMRV), up to sim 415%, accompanied by a large negative thermalvolume expansion (NTVE).
Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel|GdSi|-10.5|%|0.09090909090909091|Here weshow that antiferromagnetic (AFM) GdSi metal displays an anisotropic positiveMR value (PMRV), up to sim 415%, accompanied by a large negative thermalvolume expansion (NTVE).|Around T<missing VAR>textN the PMRV translates to negative,down to sim -10.5%.
Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$|A. Pariari,N. Khan,R. Singha,B. Satpati,P. Mandal|(S)|2|%|0.001963350785340314|To probe the charge scattering mechanism in Cd3As2 single crystal,we have analyzed the temperature and magnetic field dependence of the Seebeckcoefficient (S).|On the other hand, thescattering time enters into the inverse energy-dependent regime and the Fermisurface strongly modifies with 2% In doping at Cd site.
Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$|A. Pariari,N. Khan,R. Singha,B. Satpati,P. Mandal|(S)|4|%|0.003167420814479638|To probe the charge scattering mechanism in Cd3As2 single crystal,we have analyzed the temperature and magnetic field dependence of the Seebeckcoefficient (S).|With further increasein In content from 2 to 4%, we did not observe any Shubnikov-de Haasoscillation up to 9 T field, but the magnetoresistance is found to be quitelarge as in the case of undoped sample.
High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi|Zhipeng Hou,Wenhong Wang,Guizhou Xu,Xiaoming Zhang,Zhiyang Wei,Shipeng Shen,Enke Liu,Yuan Yao,Yisheng Chai,Young Sun,Xuekui Xi,Wenquan Wang,Zhongyuan Liu,Guangheng Wu,Xi-xiang Zhang|LuPtBi|3200|%|1.0|Here, we report on thediscovery of an electron-hole-compensated half-Heusler semimetal LuPtBi thatexhibits an extremely high electron mobility of up to 79000 cm2/Vs with anon-saturating positive MR as large as 3200% at 2 K.|Here, we report on thediscovery of an electron-hole-compensated half-Heusler semimetal LuPtBi thatexhibits an extremely high electron mobility of up to 79000 cm2/Vs with anon-saturating positive MR as large as 3200% at 2 K.
Spin-valve Effect in NiFe/MoS2/NiFe Junctions|Weiyi Wang,Awadhesh Narayan,Lei Tang,Kapildeb Dolui,Yanwen Liu,Xiang Yuan,Yibo Jin,Yizheng Wu,Ivan Rungger,Stefano Sanvito,Faxian Xiu|NiFe/MoS2/NiFe|0.73|%|0.09015748031496063|Spin-valve Effect in NiFe/MoS2/NiFe Junctions.|The spin-valve effect is observed up to240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures.
Spin-valve Effect in NiFe/MoS2/NiFe Junctions|Weiyi Wang,Awadhesh Narayan,Lei Tang,Kapildeb Dolui,Yanwen Liu,Xiang Yuan,Yibo Jin,Yizheng Wu,Ivan Rungger,Stefano Sanvito,Faxian Xiu|NiFe/MoS2/NiFe|9|%|0.07645764576457645|Spin-valve Effect in NiFe/MoS2/NiFe Junctions.|The experimental work is accompanied by the first principle electron transportcalculations, which reveal an MR of  9% for an ideal Py/MoS2/Py junction.
Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu|Cd3As2|-63|%|0.5|Here we report the magneto-transport properties ofindividual Cd3As2 nanowires.|Large negative magnetoresistance (MR) withmagnitude of -63% at 60 K and -11% at 300 K are observed when the magneticfield is parallel with the electric field direction, giving the evidence of thechiral magnetic effect in Cd3As2 nanowires.
Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu|Cd3As2|-11|%|0.5925925925925926|Large negative magnetoresistance (MR) withmagnitude of -63% at 60 K and -11% at 300 K are observed when the magneticfield is parallel with the electric field direction, giving the evidence of thechiral magnetic effect in Cd3As2 nanowires.|Large negative magnetoresistance (MR) withmagnitude of -63% at 60 K and -11% at 300 K are observed when the magneticfield is parallel with the electric field direction, giving the evidence of thechiral magnetic effect in Cd3As2 nanowires.
Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han|NiFe/Cu/Co|-9|%|0.046875|Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Cospin valves.|Their Seebeck coefficients in parallel state was larger than thatin antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% inour case.
Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han|Co/Cu/Co|-11|%|0.5|Simple Mott two-channel modelreproduced a -11% GMS for the Co/Cu/Co spin valves, qualitatively consistentwith our observations.|Simple Mott two-channel modelreproduced a -11% GMS for the Co/Cu/Co spin valves, qualitatively consistentwith our observations.
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya|MgO|0.3|%|0.782608695652174|Although the obtained TMRratio is small (0.3%), the TMR ratio is expected to be enhanced by suppressingleak current through amorphous-like crystal domains observed in MgO.|Although the obtained TMRratio is small (0.3%), the TMR ratio is expected to be enhanced by suppressingleak current through amorphous-like crystal domains observed in MgO.
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono|Fe/MgAl2O4|200|%|0.18452380952380953|In contrast, thicker Mg-Al (> 0.2 nm) induceda reduction of TMR ratios and featureless conductance spectra, indicating adegradation of the bottom-Fe/MgAl2O4 interface.|Aslight Mg-Al insertion (thickness < 0.1 nm) was effective for obtaining a largeTMR ratio above 200% at room temperature and observing a distinct local minimumstructure in conductance spectra.
MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono|MgGa2O4|121|%|1.0|Tunnelmagnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) wasobserved, suggesting a TMR enhancement by the coherent tunneling effect in theMgGa2O4 barrier.|Tunnelmagnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) wasobserved, suggesting a TMR enhancement by the coherent tunneling effect in theMgGa2O4 barrier.
MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono|MgGa2O4|196|%|1.0|Tunnelmagnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) wasobserved, suggesting a TMR enhancement by the coherent tunneling effect in theMgGa2O4 barrier.|Tunnelmagnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) wasobserved, suggesting a TMR enhancement by the coherent tunneling effect in theMgGa2O4 barrier.
Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang|AlO|14|%|1.0|The barrier is shown to be of good quality with the spin independentconductance only contributing a small portion, 14%, to the total roomtemperature conductance, similar to AlOX<missing VAR> and MgO barriers.|The barrier is shown to be of good quality with the spin independentconductance only contributing a small portion, 14%, to the total roomtemperature conductance, similar to AlOX<missing VAR> and MgO barriers.
Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero|CrI3|95|%|1.0|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.
Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero|CrI3|300|%|1.0|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.
Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero|CrI3|550|%|1.0|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.
Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu|NbTe4|102|%|1.0|We also find large magnetoresistance (MR) up to 102% atlow temperatures, which is a distinct feature differentiating NbTe4 fromother conventional CD<missing VAR>W materials.|We also find large magnetoresistance (MR) up to 102% atlow temperatures, which is a distinct feature differentiating NbTe4 fromother conventional CD<missing VAR>W materials.
Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi|Eu2Ir2O7|3000|%|0.03296703296703297|Furthermore, from the MR effect in Eu2Ir2O7 (TMI 120 K) and Gd2Ir2O7 (TMI  127 K), we revealed that the largenegative MR effect of the pyrochlore iridate Ln2Ir2O7 depends on the magnetismof the lanthanide Ln3 ion.|MR effectsexceeding 3000% were found at 1 K at a field of 9 T.
Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada|Fe3O4|-12|%|0.2|With respect to the squareness of hysteresis, Fe3O4 (111)demonstrated the largest squareness.|Furthermore, we fabricated MTJs withFe3O4(110) electrodes, and obtained an TMR effect of -12% at RT.
Spin transport in molybdenum disulfide multilayer channel|S. H. Liang,Y. Lu,B. S. Tao,S. Mc-Murtry,G. Wang,X. Marie,P. Renucci,H. Jaffrès,F. Montaigne,D. Lacour,J. -M. George,S. Petit-Watelot,M. Hehn,A. Djeffal,S. Mangin|Co/MgO|1|%|0.5277777777777778|A magnetoresistance(MR) around 1% has been observed at low temperature through a 450nm long, 6monolayer thick channel with a Co/MgO spin injector and detector.|A magnetoresistance(MR) around 1% has been observed at low temperature through a 450nm long, 6monolayer thick channel with a Co/MgO spin injector and detector.
Multiple first order transitions and associated room temperature magneto-functionality in Ni2.048Mn1.312In0.64|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar|Ni2.048Mn1.312In0.64|-45|%|0.017772511848341232|Present work reports on the observation of multiple magnetic transitions in aNi-excess ferromagnetic shape memory alloy with nominal compositionNi2.048Mn1.312In0.64.|In addition, the studiedalloy is found to be functionally rich with the observation of largemagnetoresistance (-45% and -4% at 80 kOe) and magnetocaloric effect (16.7J<missing VAR>.
Multiple first order transitions and associated room temperature magneto-functionality in Ni2.048Mn1.312In0.64|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar|Ni2.048Mn1.312In0.64|-4|%|0.013824884792626729|Present work reports on the observation of multiple magnetic transitions in aNi-excess ferromagnetic shape memory alloy with nominal compositionNi2.048Mn1.312In0.64.|In addition, the studiedalloy is found to be functionally rich with the observation of largemagnetoresistance (-45% and -4% at 80 kOe) and magnetocaloric effect (16.7J<missing VAR>.
Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$|Saroj Kumar Mishra,R Rawat|CHUF|160|%|0.5|Measurements under CHUF (cooling and heating in unequal magnetic field)protocol show reentrant transition on warming under higher magnetic field (thanthat applied during cooling).|The field induced PM<missing VAR> to FM<missing VAR> transitionresults in giant positive magnetoresistance (MR) of about 160% at 5 K.
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno|CoFeB/MgO/Fe|67|%|1.0|TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.|TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno|CoFe/Pd|78|%|0.7333333333333333|MTJs which werein-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayershowed TMR ratio of 78% by post annealing at Ta 200 degree C.|MTJs which werein-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayershowed TMR ratio of 78% by post annealing at Ta 200 degree C.
Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen|Ba0.5K0.5Fe2As2|-1|%|0.01020408163265306|Resistivity, Hall effect, magnetoresistance and D<missing VAR>C magnetization weremeasured in Mn and Zn doped Ba0.5K0.5Fe2As2 samples.|It isfound that the Mn-doping can depress the superconducting transition temperaturedrastically with a rate of Delta Tc/Mn-1%  -4.2 K, while that by Zn-dopingis negligible.
Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg|B/MgO|64|%|0.16666666666666666|We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).|The junctions yield tunnelmagnetoresistance (TMR) ratios of up to 64% at 4 monolayer (ML) tunnel barrierthickness.
Large Magnetoresistance over an Extended Temperature Regime in Monophosphides of Tantalum and Niobium|Chenglong Zhang,Cheng Guo,Hong Lu,Xiao Zhang,Zhujun Yuan,Ziquan Lin,Junfeng Wang,Shuang Jia|NbP|300|%|1.0|At room temperature the MR for TaP and NbP followsa power law of the exponent about 1.5 with the values larger than 300% ina magnetic field of 9 Tesla.|At room temperature the MR for TaP and NbP followsa power law of the exponent about 1.5 with the values larger than 300% ina magnetic field of 9 Tesla.
Perpendicular Reading of Single Confined Magnetic Skyrmions|Dax M. Crum,Mohammed Bouhassoune,Juba Bouaziz,Benedikt Schweflinghaus,Stefan Blügel,Samir Lounis|Pd/Fe|20|%|1.0|Local transport properties are sensitive to this effect, as we reportan atomistic conductance anisotropy of over 20% for magnetic skyrmions inPd/Fe/Ir(111) thin-films.|Local transport properties are sensitive to this effect, as we reportan atomistic conductance anisotropy of over 20% for magnetic skyrmions inPd/Fe/Ir(111) thin-films.
Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs|Ag2Se|1|%|1.0|Reacted Ag forms a small amount (1%) of Ag2Se impurityphase, which may increase the pinning energy in comparison with that of theundoped sample.|Reacted Ag forms a small amount (1%) of Ag2Se impurityphase, which may increase the pinning energy in comparison with that of theundoped sample.
Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia|YSb|4|%|0.08571428571428572|Inaddition, Shubnikov-de Haas (SdH) oscillation has also been observed in YSb.|At low temperature (2.5 K) and high field (14 T), thetransverse magnetoresistance (MR) is quite large (3.47 times 104% ).
Mobility induced unsaturated high linear magnetoresistance in transition-metal monopnictides Weyl semimetals|Chandra Shekhar,Vicky Süss,Marcus Schmidt|NbP|5|%|1.0|Forexample, MR values are 8.5x105% at 1.85 K for NbP and 1.5x105% at 3 K in 9 Tfor TaAs.|Forexample, MR values are 8.5x105% at 1.85 K for NbP and 1.5x105% at 3 K in 9 Tfor TaAs.
Mobility induced unsaturated high linear magnetoresistance in transition-metal monopnictides Weyl semimetals|Chandra Shekhar,Vicky Süss,Marcus Schmidt|NbP|5|%|1.0|Forexample, MR values are 8.5x105% at 1.85 K for NbP and 1.5x105% at 3 K in 9 Tfor TaAs.|Forexample, MR values are 8.5x105% at 1.85 K for NbP and 1.5x105% at 3 K in 9 Tfor TaAs.
Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu|BN|36|%|0.5|Moreover, thenegative differential resistance (NDR) can be observed within certain biasrange in 5-Z<missing VAR>BNR<missing VAR>, while 6-Z<missing VAR>BNR<missing VAR> behaves as metal whose current rises with theincrease of the voltage.|The spin filter effect of 36% can be revealed when thetwo electrodes have opposite magnetization direction.
Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu|BN|70|%|1.0|Furthermore, themagnetoresistance effect appears to be in even-N Z<missing VAR>BNRs, and the maximum valuecan reach 70%.|Furthermore, themagnetoresistance effect appears to be in even-N Z<missing VAR>BNRs, and the maximum valuecan reach 70%.
Magnetic Field-Free Giant Magnetoresistance in a Proximity- and Gate-Induced Graphene Spin Valve|Yu Song|EuO|5|%|1.0|We demonstrate that, when the second top gate is tuned toutilize the insulating or spin insulating states, huge giant magnetoresistance(GMR) at high temperature (several times of 105% at 68K and 100K) can beachieved for EuO and YIG<missing VAR>.|We demonstrate that, when the second top gate is tuned toutilize the insulating or spin insulating states, huge giant magnetoresistance(GMR) at high temperature (several times of 105% at 68K and 100K) can beachieved for EuO and YIG<missing VAR>.
Semitransparent anisotropic and spin Hall magnetoresistance sensor enabled by spin-orbit toque biasing|Yumeng Yang,Yanjun Xu,Hang Xie,Baoxi Xu,Yihong Wu|NiFe/Pt|5|%|0.29896907216494845|Despite the extremely simple design, the spin-orbit torqueeffective field biased NiFe/Pt sensor exhibits level of linearity andsensitivity comparable to those of sensors using more complex linearizationschemes.|In a proof-of-concept design using a full Wheatstone bridge comprisingof four sensing elements, we obtained a sensitivity up to 202.9 mOmega/Oe,linearity error below 5%, and a detection limit down to 20 nT.
Semitransparent anisotropic and spin Hall magnetoresistance sensor enabled by spin-orbit toque biasing|Yumeng Yang,Yanjun Xu,Hang Xie,Baoxi Xu,Yihong Wu|NiFe/Pt|50|%|0.175|Despite the extremely simple design, the spin-orbit torqueeffective field biased NiFe/Pt sensor exhibits level of linearity andsensitivity comparable to those of sensors using more complex linearizationschemes.|Thetransmittance of the sensor is over 50% in the visible range.
Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures|Feng Wei,Chieh-Wen Liu,Da Li,Chun-Yang Wang,Hong-Rui Zhang,Ji-rong Sun,Xuan P. A. Gao,Song Ma,Zhidong Zhang|PbTe|2150|%|1.0|By transport measurement on heterostructures composed of p<missing VAR>-type topologicalcrystalline insulator SnTe and n<missing VAR>-type conventional semiconductor PbTe, here weshow a giant linear magnetoresistance (up to 2150% under 14 T at 2 K) inducedby the Dirac Fermions at the PbTe/SnTe interface.|By transport measurement on heterostructures composed of p<missing VAR>-type topologicalcrystalline insulator SnTe and n<missing VAR>-type conventional semiconductor PbTe, here weshow a giant linear magnetoresistance (up to 2150% under 14 T at 2 K) inducedby the Dirac Fermions at the PbTe/SnTe interface.
L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang|FePd|25|%|0.3387096774193548|Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.|Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang|FePd|60|%|0.24285714285714285|Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.|Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
Extreme magnetoresistance and Shubnikov-de Haas oscillations in ferromagnetic DySb|D. D. Liang,Y. J. Wang,C. Y. Xi,W. L. Zhen,J. Yang,L. Pi,W. K. Zhu,C. J. Zhang|DySb|4|%|0.23511904761904762|Although a band inversion is found theoretically, suggesting thatDySb might be topologically nontrivial, it is deeply underneath the Fermilevel, which rules out a topological nature of the XMR.|A non-saturated extremely largepositive magnetoresistance (XMR) is observed (as large as 3.7104% at 1.8 Kand 38.7 T), along with the Shubnikov-de Haas oscillations that are wellreproduced by our first principles calculations.
Magneto-ionic control of spin polarization in magnetic tunnel junctions|Yingfen Wei,Sylvia Matzen,Cynthia P. Quinteros,Thomas Maroutian,Guillaume Agnus,Philippe Lecoeur,Beatriz Noheda|Hf0.5Zr0.5O2|6|%|0.5|Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported toshow both tunneling magnetoresistance effect (TMR) and tunnelingelectroresistance effect (TER), displaying four resistance states by magneticand electric field switching.|Here we show that, under electric field cyclingof large enough magnitude, the TER can reach values as large as 106%.
Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures|Johanna Fischer,Matthias Althammer,Nynke Vlietstra,Hans Huebl,Sebastian T. B. Goennenwein,Rudolf Gross,Stephan Geprägs,Matthias Opel|Y3Fe5O12/Pt|0.25|%|0.375|The maximum SMR amplitude of0.25% is, surprisingly, twice as high as for prototypical ferrimagneticY3Fe5O12/Pt heterostructures.|The maximum SMR amplitude of0.25% is, surprisingly, twice as high as for prototypical ferrimagneticY3Fe5O12/Pt heterostructures.
Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind|NaMnBi|0|%|1.0|The I-Mn-V antiferromagnet, NaMnBi, develops a very large positivemagnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing asemiconductor-to-metal transition (SMT).|The I-Mn-V antiferromagnet, NaMnBi, develops a very large positivemagnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing asemiconductor-to-metal transition (SMT).
Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind|NaMnBi|20|%|0.06790123456790123|The I-Mn-V antiferromagnet, NaMnBi, develops a very large positivemagnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing asemiconductor-to-metal transition (SMT).|In the absence of an SMT, a modest(20%) MR is achieved.
Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars|N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Langer,B. Ocker,H. W. Schumacher|MgO|90|%|1.0|From additional measurements on MTJs after dielectric breakdown, atunneling magneto thermopower up to 90% can be derived for 1.5 nm MgO based MTJnanopillars.|From additional measurements on MTJs after dielectric breakdown, atunneling magneto thermopower up to 90% can be derived for 1.5 nm MgO based MTJnanopillars.
Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators|Wenhong Wang,Yin Du,Guizhou Xu,Xiaoming Zhang,Enke Liu,Zhongyuan Liu,Youguo Shi,Jinglan Chen,Guangheng Wu,Xixiang Zhang|YPdBi|350|%|1.0|Owning to the successfully obtained thehigh-quality YPdBi single crystals, large non-saturating linear MR of as highas 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T isobserved.|Owning to the successfully obtained thehigh-quality YPdBi single crystals, large non-saturating linear MR of as highas 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T isobserved.
Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators|Wenhong Wang,Yin Du,Guizhou Xu,Xiaoming Zhang,Enke Liu,Zhongyuan Liu,Youguo Shi,Jinglan Chen,Guangheng Wu,Xixiang Zhang|YPdBi|120|%|0.6756756756756757|Owning to the successfully obtained thehigh-quality YPdBi single crystals, large non-saturating linear MR of as highas 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T isobserved.|Owning to the successfully obtained thehigh-quality YPdBi single crystals, large non-saturating linear MR of as highas 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T isobserved.
Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics|Taishi Chen,Qian Chen,Koen Schouteden,Wenkai Huang,Xuefeng Wang,Zhe Li,Feng Miao,Xinran Wang,Zhaoguo Li,Bo Zhao,Shaochun Li,Fengqi Song,Jinlan Wang,Chris van Haesendonck,Baigeng Wang,Guanghou Wang|(SS)|3.3|%|0.2727272727272727|The dephasing analysis and scanning tunneling spectroscopycorroborate the transport of the topological surface states (SS).|The SSscontribute 3.3% conductance in 30mum<missing VAR>-thick material and become dominant inthe 100nm-thick flakes.
Evidence for topological proximity effect in graphene coupled to topological insulator|Liang Zhang,Ben-Chuan Lin,Yan-Fei Wu,Jun Xu,Dapeng Yu,Zhi-Min Liao|Bi2Se3|-91|%|1.0|The coupling between the pz orbitals of graphene and the p<missing VAR>orbitals of surface states on the Bi2Se3 bottom surface can be enhanced byapplying perpendicular negative magnetic field, resulting in a giant negativemagnetoresistance at the Dirac point up to about -91%.|The coupling between the pz orbitals of graphene and the p<missing VAR>orbitals of surface states on the Bi2Se3 bottom surface can be enhanced byapplying perpendicular negative magnetic field, resulting in a giant negativemagnetoresistance at the Dirac point up to about -91%.
Reduction of the low-temperature bulk gap in samarium hexaboride under high magnetic fields|S. Wolgast,Y. S. Eo,K. Sun,Ç. Kurdak,F. F. Balakirev,M. Jaime,D. -J. Kim,Z. Fisk|SmB6|50|%|0.1189083820662768|SmB6 exhibits a small (15-20 meV) bandgap at low temperatures due tohybridized d<missing VAR> and f<missing VAR> electrons, a tiny (3 meV) transport activation energy(E<missing VAR>A) above 4 K, and surface states accessible to transport below 2 K.|E<missing VAR>A shrinks by 50% under fields up to 60 T.
Magnetic field induced strong valley polarization in the three dimensional topological semimetal LaBi|Nitesh Kumar,Chandra Shekhar,J. Klotz,J. Wosnitza,Claudia Felser|LaBi|60|%|0.5|The valley polarization in LaBiis compared to the sister compound LaSb where it is found to be smaller.|We achieved a polarization of 60% at 2 K despite thecoexistence of three-dimensional hole pockets.
Dynamical amplification of magnetoresistances and Hall currents up to the THz regime|Filipe S. M. Guimarães,Manuel dos Santos Dias,Juba Bouaziz,Antonio T. Costa,Roberto B. Muniz,Samir Lounis|Fe/W|500|%|0.5|In this work, we considerCo/Pt and Fe/W bilayers to show that accounting for the phase differencebetween different processes is crucial to the correct description of thedynamical currents.|By tuning each system towards its ferromagnetic resonance,we reveal that dynamical spin Hall angles can non-trivially change sign and beboosted by over 500%, reaching giant values.
Magnetic and structural properties of Co$_2$MnSi based Heusler compound|S. J. Ahmed,C. Boyer,M. Niewczas|Co2MnSi|6.5|%|0.12244897959183673|The neutron diffraction studies show almostidentical amount of Mn and Co disorders of 6.5% and 7.6%, which was found tobe in good agreement with density functional theory (DFT) calculations of thestable Co2MnSi system with the corresponding disorders.|The neutron diffraction studies show almostidentical amount of Mn and Co disorders of 6.5% and 7.6%, which was found tobe in good agreement with density functional theory (DFT) calculations of thestable Co2MnSi system with the corresponding disorders.
Magnetic and structural properties of Co$_2$MnSi based Heusler compound|S. J. Ahmed,C. Boyer,M. Niewczas|Co2MnSi|7.6|%|0.25|The neutron diffraction studies show almostidentical amount of Mn and Co disorders of 6.5% and 7.6%, which was found tobe in good agreement with density functional theory (DFT) calculations of thestable Co2MnSi system with the corresponding disorders.|The neutron diffraction studies show almostidentical amount of Mn and Co disorders of 6.5% and 7.6%, which was found tobe in good agreement with density functional theory (DFT) calculations of thestable Co2MnSi system with the corresponding disorders.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|100|%|1.0|Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-h<missing VAR>BN/graphene/h<missing VAR>BN heterostructures.|Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-h<missing VAR>BN/graphene/h<missing VAR>BN heterostructures.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|50|%|0.1619718309859155|A top-layer ofbilayer-h<missing VAR>BN is used as a tunnel barrier for spin-injection and detection ingraphene with ferromagnetic cobalt electrodes.|We report surprisingly large andbias induced (differential) spin-injection (detection) polarizations up to 50%(135%) at a positive voltage bias of 0.6 V, as well as sign invertedpolarizations up to -70% (-60%) at a reverse bias of -0.4 V.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|135|%|0.12162162162162163|This demonstratesthe potential of bilayer-h<missing VAR>BN tunnel barriers for practical graphene spintronicsapplications.|We report surprisingly large andbias induced (differential) spin-injection (detection) polarizations up to 50%(135%) at a positive voltage bias of 0.6 V, as well as sign invertedpolarizations up to -70% (-60%) at a reverse bias of -0.4 V.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|-70|%|0.2777777777777778|This demonstratesthe potential of bilayer-h<missing VAR>BN tunnel barriers for practical graphene spintronicsapplications.|We report surprisingly large andbias induced (differential) spin-injection (detection) polarizations up to 50%(135%) at a positive voltage bias of 0.6 V, as well as sign invertedpolarizations up to -70% (-60%) at a reverse bias of -0.4 V.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|-60|%|0.4032258064516129|This demonstratesthe potential of bilayer-h<missing VAR>BN tunnel barriers for practical graphene spintronicsapplications.|We report surprisingly large andbias induced (differential) spin-injection (detection) polarizations up to 50%(135%) at a positive voltage bias of 0.6 V, as well as sign invertedpolarizations up to -70% (-60%) at a reverse bias of -0.4 V.
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees|BN|2.7|%|0.14285714285714285|This demonstratesthe potential of bilayer-h<missing VAR>BN tunnel barriers for practical graphene spintronicsapplications.|With such enhanced spin-injection and detection polarizations, wereport a record two-terminal (inverted) spin-valve signals up to 800 Omegawith a magnetoresistance ratio of 2.7%, and we achieve spin accumulations up to4.1 meV.
Anisotropic electronic transport and Rashba effect of the two-dimensional electron system in (110) SrTiO$_3$-based heterostructures|K. Wolff,R. Eder,R. Schäfer,R. Schneider,D. Fuchs|SrTiO3|60|%|0.0068376068376068385|The two-dimensional electron system in (110)Al2O3-delta/SrTiO3heterostructures displays anisotropic electronic transport.|However, the AMR-amplitude is found to beanisotropic with respect to the current direction, leading to a 60% larger AMRamplitude for current I along the [001] direction compared to I parallel to[1bar10].
Magnetoresistance in Metallic Ferroelectrics|Jiesu Wang,Hongbao Yao,Kuijuan Jin,Er-Jia Guo,Qinghua Zhang,Chao Ma,Lin Gu,Pazhanivelu Venkatachalam,Jiali Zhao,Jiaou Wang,Hassen Riahi,Haizhong Guo,Chen Ge,Can Wang,Guozhen Yang|PN|50|%|0.45652173913043476|We found that the conducting and magnetic responses of PNT<missing VAR>Ofilms are highly asymmetric.|Negative MR up to 50% is observed under anin-plane magnetic field; the MR switches to positive with the magnetic fieldapplied parallel to the surface normal.
Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4|Haowen Wang,Chengliang Lu,Jun Chen,Yong Liu,S. L. Yuan,Sang-Wook Cheong,Shuai Dong,Jun-Ming Liu|Sr2IrO4|160|%|0.8571428571428571|Here, we report the remarkably enhanced anisotropic magnetoresistance (AMR) asgiant as  160% in a simple resistor structure made of AFM<missing VAR> Sr2IrO4 withoutauxiliary reference layer.|Here, we report the remarkably enhanced anisotropic magnetoresistance (AMR) asgiant as  160% in a simple resistor structure made of AFM<missing VAR> Sr2IrO4 withoutauxiliary reference layer.
Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4|Haowen Wang,Chengliang Lu,Jun Chen,Yong Liu,S. L. Yuan,Sang-Wook Cheong,Shuai Dong,Jun-Ming Liu|Sr2IrO4|1|%|0.3333333333333333|Furthermore, we demonstrate the bistable nonvolatile memory states that can beswitched in-situ without the inconvenient heat-assisted procedure, and robustlypreserved even at zero magnetic field, due to the modified interlayer couplingby 1% Ga-doping in Sr2IrO4.|Furthermore, we demonstrate the bistable nonvolatile memory states that can beswitched in-situ without the inconvenient heat-assisted procedure, and robustlypreserved even at zero magnetic field, due to the modified interlayer couplingby 1% Ga-doping in Sr2IrO4.
Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev|EuS|100|%|0.21428571428571427|PMR calculations were performed for yttrium iron garnet(YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS.|Wefind a significant PMR (up to 100%) values defined as a relative change ofgraphene conductance with respect to parallel and antiparallel alignment of twoproximity induced magnetic regions within graphene.
Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev|YI|22|%|1.0|Namely, for high Curietemperature (Tc) CFO and YIG<missing VAR> insulators which are particularly important forapplications, we obtain 22% and 77% at room temperature, respectively.|Namely, for high Curietemperature (Tc) CFO and YIG<missing VAR> insulators which are particularly important forapplications, we obtain 22% and 77% at room temperature, respectively.
Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev|YI|77|%|0.6428571428571429|Namely, for high Curietemperature (Tc) CFO and YIG<missing VAR> insulators which are particularly important forapplications, we obtain 22% and 77% at room temperature, respectively.|Namely, for high Curietemperature (Tc) CFO and YIG<missing VAR> insulators which are particularly important forapplications, we obtain 22% and 77% at room temperature, respectively.
Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev|EuS|100|%|0.5454545454545454|For lowTc chalcogenides, EuO and EuS, the PMR is 100% in both cases.|For lowTc chalcogenides, EuO and EuS, the PMR is 100% in both cases.
Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa|Hongyuan Wang,Cuiying Pei,Hao Su,Zhenhai Yu,Mingtao Li,Wei Xia,Xiaolei Liu,Qifeng Liang,Jinggeng Zhao,Chunyin Zhou,Na Yu,Xia Wang,Zhiqiang Zou,Lin Wang,Yanpeng Qi,Yanfeng Guo|TaAs2|96.6|%|0.6111111111111112|Interestingly, theMR of TaAs2 under pressure changed gently, which at 1.7 GPa is 96.6% and at36.6 G<missing VAR>Pa is still 36.7%.|Interestingly, theMR of TaAs2 under pressure changed gently, which at 1.7 GPa is 96.6% and at36.6 G<missing VAR>Pa is still 36.7%.
Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa|Hongyuan Wang,Cuiying Pei,Hao Su,Zhenhai Yu,Mingtao Li,Wei Xia,Xiaolei Liu,Qifeng Liang,Jinggeng Zhao,Chunyin Zhou,Na Yu,Xia Wang,Zhiqiang Zou,Lin Wang,Yanpeng Qi,Yanfeng Guo|TaAs2|36.7|%|0.17142857142857143|Interestingly, theMR of TaAs2 under pressure changed gently, which at 1.7 GPa is 96.6% and at36.6 G<missing VAR>Pa is still 36.7%.|Interestingly, theMR of TaAs2 under pressure changed gently, which at 1.7 GPa is 96.6% and at36.6 G<missing VAR>Pa is still 36.7%.
Longitudinal and transverse magnetoresistance of SrTiO$_3$ with a single closed Fermi surface|Yudai Awashima,Yuki Fuseya|SrTiO3|300|%|1.0|The calculated MR (300% at 10 T) quantitatively agrees with the experimentalresults for SrTiO3 including the behavior of the linear MR.|The calculated MR (300% at 10 T) quantitatively agrees with the experimentalresults for SrTiO3 including the behavior of the linear MR.
Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu|Pt1-x|57|%|1.0|Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibitsa much lower power consumption (reduced by about 57%), due to 80% enhancementof spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x<missing VAR> 0.19 as compared to pure Pt.|Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibitsa much lower power consumption (reduced by about 57%), due to 80% enhancementof spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x<missing VAR> 0.19 as compared to pure Pt.
Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu|Pt1-x|80|%|1.0|Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibitsa much lower power consumption (reduced by about 57%), due to 80% enhancementof spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x<missing VAR> 0.19 as compared to pure Pt.|Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibitsa much lower power consumption (reduced by about 57%), due to 80% enhancementof spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x<missing VAR> 0.19 as compared to pure Pt.
Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia|Fe/MgO/Ag/Mn2Au/Ta|1000|%|1.0|Giant M<missing VAR>Rs more than 1000% are predicted in someFe/MgO/Ag/Mn2Au/Ta junctions that are about the same order as that in anMgO-based ferromagnetic tunnel junction with same barrier thickness.|Giant M<missing VAR>Rs more than 1000% are predicted in someFe/MgO/Ag/Mn2Au/Ta junctions that are about the same order as that in anMgO-based ferromagnetic tunnel junction with same barrier thickness.
Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield|SrAgSb|17|%|1.0|Although the residual resistivity ratio (RRR) for all samples studied wasrelatively low, ranging between 2.4 and 3.4, the compounds had non-saturatingmagnetoresistance (MR), reaching values of sim 17% and sim 70% at 4 K and9 T<missing VAR> for SrAgSb and SrAuSb respectively.|Although the residual resistivity ratio (RRR) for all samples studied wasrelatively low, ranging between 2.4 and 3.4, the compounds had non-saturatingmagnetoresistance (MR), reaching values of sim 17% and sim 70% at 4 K and9 T<missing VAR> for SrAgSb and SrAuSb respectively.
Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield|SrAgSb|70|%|1.0|Although the residual resistivity ratio (RRR) for all samples studied wasrelatively low, ranging between 2.4 and 3.4, the compounds had non-saturatingmagnetoresistance (MR), reaching values of sim 17% and sim 70% at 4 K and9 T<missing VAR> for SrAgSb and SrAuSb respectively.|Although the residual resistivity ratio (RRR) for all samples studied wasrelatively low, ranging between 2.4 and 3.4, the compounds had non-saturatingmagnetoresistance (MR), reaching values of sim 17% and sim 70% at 4 K and9 T<missing VAR> for SrAgSb and SrAuSb respectively.
Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka|InAs|500|%|1.0|Contrary to thecase of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibitferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasingthe InAs interval thickness t<missing VAR>InAs (Tc  t<missing VAR>InAs-3), and an extremely largemagnetoresistance up to 500% that is tunable by a gate voltage.|Contrary to thecase of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibitferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasingthe InAs interval thickness t<missing VAR>InAs (Tc  t<missing VAR>InAs-3), and an extremely largemagnetoresistance up to 500% that is tunable by a gate voltage.
Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka|InAs|1.6|%|1.0|The MR ratio increases (from 0.03 to 1.6%) with decreasingt<missing VAR>mathrmInAs (from 9 to 3 nm) due to the enhancement of the interfacescattering.|The MR ratio increases (from 0.03 to 1.6%) with decreasingt<missing VAR>mathrmInAs (from 9 to 3 nm) due to the enhancement of the interfacescattering.
Fe3Se4: A Possible Ferrimagnetic Half-Metal?|Girish C. Tewari,Divya Srivastava,Reijo Pohjonen,Otto Mustonen,Antti J. Karttunen,Johan Lindén,Maarit Karppinen|Fe3Se4|100|%|0.5|Fe3Se4 A Possible Ferrimagnetic Half-Metal?|Half-metallic ferromagnets show 100% spin-polarization at the Fermi level andare ideal candidates for spintronic applications.
Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag$_2$CrO$_2$|Hiroki Taniguchi,Mori Watanabe,Masashi Tokuda,Shota Suzuki,Eria Imada,Takashi Ibe,Tomonori Arakawa,Hiroyuki Yoshida,Hiroaki Ishizuka,Kensuke Kobayashi,Yasuhiro Niimi|CrO2|15|%|1.0|The butterfly-shaped MR appears onlywhen the magnetic field is applied perpendicularly to the CrO2 plane withthe maximum MR ratio (approx 15%) at the magnetic ordering temperature.|The butterfly-shaped MR appears onlywhen the magnetic field is applied perpendicularly to the CrO2 plane withthe maximum MR ratio (approx 15%) at the magnetic ordering temperature.
Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor|Huali Yang,Qing Liu,Zhaoliang Liao,Liang Si,Peiheng Jiang,Xiaolei Liu,Yanfeng Guo,Junjie Yin,Meng Wang,Zhigao Sheng,Yuxin Zhao,Zhiming Wang,Zhicheng Zhong,Run-Wei Li|EuTe2|40000|%|0.25|Here we report acolossal anisotropic magnetoresistance effect in an antiferromagnetic binarycompound with layered structure rare-earth dichalcogenide EuTe2.|The AMRreaches 40000%, which is 4 orders of magnitude larger than that in conventionalantiferromagnetic alloys.
Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian|SmAlSi|5200|%|0.5|At low temperatures, SmAlSi exhibits large non-saturatedmagnetoresistance (MR)5200% (at 2 K, 48 T) and prominent Shubnikov-de Haas(SdH) oscillations, where M<missing VAR>Rs follow the power-law field dependence withexponent 1.52 at low fields (mu0H < 15 T) and linear behavior 1 under highfields (mu0H > 18 T).|At low temperatures, SmAlSi exhibits large non-saturatedmagnetoresistance (MR)5200% (at 2 K, 48 T) and prominent Shubnikov-de Haas(SdH) oscillations, where M<missing VAR>Rs follow the power-law field dependence withexponent 1.52 at low fields (mu0H < 15 T) and linear behavior 1 under highfields (mu0H > 18 T).
Large Magnetoresistance and Nontrivial Berry Phase in Nb3Sb Crystals with A15 Structure|Qin Chen,Yuxing Zhou,Binjie Xu,Zhefeng Lou,Huancheng Chen,Shuijin Chen,Chunxiang Wu,Jianhua Du,Hangdong Wang,Jinhu Yang,Minghu Fang|Nb3Sb|717|%|1.0|Similar to other topologicaltrivial/nontrivial semimetals, Nb3Sb, exhibits large magnetoresistance (MR)at low temperatures (717%, 2 K and 9 T), unsaturating quadratic fielddependence of MR and up-turn behavior in rhoxx(emphT) curves undermagnetic field, which is considered to result from a perfect hole-electroncompensation, as evidenced by the Hall resistivity measurements.|Similar to other topologicaltrivial/nontrivial semimetals, Nb3Sb, exhibits large magnetoresistance (MR)at low temperatures (717%, 2 K and 9 T), unsaturating quadratic fielddependence of MR and up-turn behavior in rhoxx(emphT) curves undermagnetic field, which is considered to result from a perfect hole-electroncompensation, as evidenced by the Hall resistivity measurements.
Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal|Huixin Guo,Zexin Feng,Han Yan,Jiuzhao Liu,Jia Zhang,Xiaorong Zhou,Peixin Qin,Jialin Cai,Zhongming Zeng,Xin Zhang,Xiaoning Wang,Hongyu Chen,Haojiang Wu,Chengbao Jiang,Zhiqi Liu|Mn3Ga|10|%|0.5|In thiswork, we demonstrate the giant piezoelectric strain control of the spinstructure and the anomalous Hall resistance in a noncollinear antiferromagneticmetal - D<missing VAR>019 hexagonal Mn3Ga.|Furthermore, we built tunnel junction deviceswith a diameter of 200 nm to amplify the maximum tunneling resistance ratio tomore than 10% at room-temperature, which thus implies significant potential ofnoncollinear antiferromagnets for large signal-output and high-densityantiferromagnetic spintronic device applications.
Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi|SmAlSi|900|%|1.0|Both samples exhibit non-saturatedmagnetoresistance (MR), with  900% for SmAlSi and 80% for CeAlSi at 1.8 K, 9T<missing VAR>.|Both samples exhibit non-saturatedmagnetoresistance (MR), with  900% for SmAlSi and 80% for CeAlSi at 1.8 K, 9T<missing VAR>.
Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi|SmAlSi|80|%|1.0|Both samples exhibit non-saturatedmagnetoresistance (MR), with  900% for SmAlSi and 80% for CeAlSi at 1.8 K, 9T<missing VAR>.|Both samples exhibit non-saturatedmagnetoresistance (MR), with  900% for SmAlSi and 80% for CeAlSi at 1.8 K, 9T<missing VAR>.
Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim|NbSe2/CrPS4|16|%|1.0|ThemathrmNbSe2/CrPS4 bilayer device exhibits bias-dependent superconductingcritical-current variations of up to 16%, with the magnetochiral anisotropyreaching sim 105mathrm T<missing VAR>-1A-1.|ThemathrmNbSe2/CrPS4 bilayer device exhibits bias-dependent superconductingcritical-current variations of up to 16%, with the magnetochiral anisotropyreaching sim 105mathrm T<missing VAR>-1A-1.
Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim|CrPS4/NbSe2/CrPS4|40|%|1.0|Furthermore, themathrmCrPS4/NbSe2/CrPS4 spin-valve structure exhibits thesuperconducting diode effect with critical-current variations of up to 40%.|Furthermore, themathrmCrPS4/NbSe2/CrPS4 spin-valve structure exhibits thesuperconducting diode effect with critical-current variations of up to 40%.
Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel|SH|20|%|1.0|The maximum effective spin Hall angle found forthe Pt/Co/Ta trilayer reaches thetaSH  20%.|The maximum effective spin Hall angle found forthe Pt/Co/Ta trilayer reaches thetaSH  20%.
Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel|US|27|%|1.0|The USMR of the trilayeryields up to 27% higher effect as for the respective bilayers with the largesteffective USMR amplitude of -0.32 times 10-5 for the Pt/Co/Ta trilayerat a charge current density of 107 A/cm2.|The USMR of the trilayeryields up to 27% higher effect as for the respective bilayers with the largesteffective USMR amplitude of -0.32 times 10-5 for the Pt/Co/Ta trilayerat a charge current density of 107 A/cm2.
Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani|Fe/MgAl2O4|429|%|1.0|We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.|We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.
Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani|Fe/MgAl2O4|34|%|1.0|We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.|We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.
Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani|Fe/MgO|125|%|1.0|Resistance oscillations with a MTJ barrier thickness of 0.3-nm weresignificantly enhanced compared to those of a Fe/MgO/Fe(001) MTJ, resulting ina large TMR oscillation peak-to-valley difference of 125% at RT.|Resistance oscillations with a MTJ barrier thickness of 0.3-nm weresignificantly enhanced compared to those of a Fe/MgO/Fe(001) MTJ, resulting ina large TMR oscillation peak-to-valley difference of 125% at RT.
Endless Dirac nodal lines in kagome-metal Ni3In2S2|Tiantian Zhang,T. Yilmaz,E. Vescovo,H. X. Li,R. G. Moore,H. N. Lee,H. Miao,S. Murakami,M. A. McGuire|Co3Sn2S2|2000|%|0.06993006993006994|Recently the time-reversal symmetry-breaking inducedWeyl fermions are observed in a kagome-metal Co3Sn2S2, triggering interests innodal-line excitations in multiband kagome systems.|The lineardipsersive electronic structure, confirmed by angle-resolved photoemissionspectroscopy, induces large magnetoresistance up to 2000% at 9 T.
Anomalous Nernst effect in La0.5Ca0.5Coo3|A. Ghosh,M. Manikandan,R. Mahendiran|La0.5Ca0.5CoO3|2|%|0.0625|We report the occurrence of the anomalous Nernst effect (ANE) inpolycrystalline perovskite La0.5Ca0.5CoO3.|The sample is ferromagnetic below T<missing VAR>C 147 K and resistivity shows non-metallic behavior above and below the T<missing VAR>C withonly a small negative magnetoresistance (2%) around T<missing VAR>C.
Weak antilocalization and ferromagnetism in magnetic Weyl semimetal Co3Sn2S2|Kapil Kuma,M. M. Sharma,V. P. S. Awana|Co3Sn2S2|230|%|1.0|The synthesizedCo3Sn2S2 exhibits high magnetoresistance of around 230% at 2K.|The synthesizedCo3Sn2S2 exhibits high magnetoresistance of around 230% at 2K.
Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene|Ayan Ghosh,Souvik Chakraborty,Unmesh Ghorai,Arup Kumar Paul,K. Watanabe,T. Taniguchi,Rajdeep Sensarma,Anindya Das|CNP|2500|%|1.0|Using electrical and thermal transport, we find almost two ordersof magnitude enhancement of the thermopower in magnetic fields much smallerthan the extreme quantum limit, accompanied by a large magnetoresistance(sim2500%) at CNP.|Using electrical and thermal transport, we find almost two ordersof magnitude enhancement of the thermopower in magnetic fields much smallerthan the extreme quantum limit, accompanied by a large magnetoresistance(sim2500%) at CNP.
A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu|Mg3Bi2|16600|%|0.004734848484848484|A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2.|Herein, we demonstrate a topologicaltransition-induced giant transverse thermoelectric effect in polycrystallineMn-doped Mg3deltaBi2 material, which has a competitively large transversethermopower (617 u<missing VAR>V/K), power factor (20393 u<missing VAR>Wm-1K-2), magnetoresistance(16600%), and electronic mobility (35280cm2V-1S-1).
Electrical characterization of the azimuthal anisotropy of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$-based ferromagnetic nanotubes|Dhananjay Tiwari,Martin Christoph Scheuerlein,Mahdi Jaber,Eric Gautier,Laurent Vila,Jean-Philippe Attané,Michael Schöbitz,Aurélien Masseboeuf,Tim Hellmann,Jan P. Hofmann,Wolfgang Ensinger,Olivier Fruchart|(H)|-0.3|%|0.25|We determined the azimuthal anisotropy fieldfrom M<missing VAR>(H) AMR loops of single tubes contacted electrically.|The resistivity is sim 1.5times10-6mathrmOmega/m<missing VAR>, and theanisotropic magnetoresistance(AMR) of 0.2-0.3%, one order of magnitudelarger(resp.
Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang|Fe3GeTe2/GaSe/Fe3GeTe2|192|%|0.7857142857142857|We report TMR up to 192% at 10 K in all-vdWFe3GeTe2/GaSe/Fe3GeTe2 MTJs.|We report TMR up to 192% at 10 K in all-vdWFe3GeTe2/GaSe/Fe3GeTe2 MTJs.
Observation of Colossal Terahertz Magnetoresistance and Magnetocapacitance in a Perovskite Manganite|Fuyang Tay,Swati Chaudhary,Jiaming He,Nicolas Marquez Peraca,Andrey Baydin,Gregory A. Fiete,Jianshi Zhou,Junichiro Kono|La0.875Sr0.125MnO3|60|%|0.5|We have studied the terahertz response of a bulk single crystal ofLa0.875Sr0.125MnO3 at around its Curie temperature, observinglarge changes in the real and imaginary parts of the optical conductivity as afunction of magnetic field.|The terahertz resistance and capacitance extractedfrom the optical conductivity rapidly increased with increasing magnetic fieldand did not show any sign of saturation up to 6 T, reaching 60% and 15%,respectively, at 180 K.
Observation of Colossal Terahertz Magnetoresistance and Magnetocapacitance in a Perovskite Manganite|Fuyang Tay,Swati Chaudhary,Jiaming He,Nicolas Marquez Peraca,Andrey Baydin,Gregory A. Fiete,Jianshi Zhou,Junichiro Kono|La0.875Sr0.125MnO3|15|%|0.5|We have studied the terahertz response of a bulk single crystal ofLa0.875Sr0.125MnO3 at around its Curie temperature, observinglarge changes in the real and imaginary parts of the optical conductivity as afunction of magnetic field.|The terahertz resistance and capacitance extractedfrom the optical conductivity rapidly increased with increasing magnetic fieldand did not show any sign of saturation up to 6 T, reaching 60% and 15%,respectively, at 180 K.
A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$|Vikas Saini,Souvik Sasmal,Vikash Sharma,Suman Nandi,Gourav Dwari,Bishal Maity,Ruta Kulkarni,Arumugam Thamizhavel|B2.18|136|%|0.7105263157894737|The observed transverse magnetoresistance (MR) is found to bearound 136% at a temperature of 1.8 K and a magnetic field of 14 T, followingthe semiclassical exponent MR sim B2.18.|The observed transverse magnetoresistance (MR) is found to bearound 136% at a temperature of 1.8 K and a magnetic field of 14 T, followingthe semiclassical exponent MR sim B2.18.
Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal|GaNMn3/SrTiO3/GaNMn3|4|%|0.8205128205128205|Using an GaNMn3/SrTiO3/GaNMn3 (001) AFMTJ as arepresentative example, we demonstrate a giant TMR ratio exceeding 104%and originating from the ETMR effect.|Using an GaNMn3/SrTiO3/GaNMn3 (001) AFMTJ as arepresentative example, we demonstrate a giant TMR ratio exceeding 104%and originating from the ETMR effect.
Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando|CoO2|50|%|1.0|An attractive feature of G<missing VAR>BCO is that it allows a precise andcontinuous doping of CoO2 planes with either electrons or holes, spanning awide range from the charge-ordered insulator at 50% electron doping (x<missing VAR>0) tothe undoped band insulator (x<missing VAR>0.5), and further towards the heavily hole-dopedmetallic state.|An attractive feature of G<missing VAR>BCO is that it allows a precise andcontinuous doping of CoO2 planes with either electrons or holes, spanning awide range from the charge-ordered insulator at 50% electron doping (x<missing VAR>0) tothe undoped band insulator (x<missing VAR>0.5), and further towards the heavily hole-dopedmetallic state.
One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze|PW|7|%|0.005477308294209703|Our approach benefits from the high accuracy of the underlying FL<missing VAR>APWcalculations allowing us to address the complex interplay of structure,magnetism, and spin-orbit coupling and is ideally suited to studyspin-dependent electronic transport in one-dimensional magnetic nanostructures.|We quantify this effect by calculating theballistic anisotropic magnetoresistance which displays values up to as much as7% for ballistic spin-scattering and gigantic values of around 100% for the Ptimpurity in the Co wire.
One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze|PW|100|%|0.0013049962714392245|Our approach benefits from the high accuracy of the underlying FL<missing VAR>APWcalculations allowing us to address the complex interplay of structure,magnetism, and spin-orbit coupling and is ideally suited to studyspin-dependent electronic transport in one-dimensional magnetic nanostructures.|We quantify this effect by calculating theballistic anisotropic magnetoresistance which displays values up to as much as7% for ballistic spin-scattering and gigantic values of around 100% for the Ptimpurity in the Co wire.
Resistive and magnetoresistive properties of CrO2 pressed powders with different types of inter-granular dielectric layers|N. V. Dalakova,B. I. Belevtsev,E. Yu. Beliayev,O. M. Bludov,V. A. Pashchenko,M. G. Osmolovsky,O. M. Osmolovskaya|CrOOH|37|%|0.018617021276595744|All of the particles had a surface dielectricshell of varying thickness and different types (such as oxyhydroxide -CrOOH orchromium oxide Cr2O3).|The maximum value of MR at low temperatures (T<missing VAR> approx5 K) is approx 37% in relatively small fields (0.5 T).
Resistive and magnetoresistive properties of CrO2 pressed powders with different types of inter-granular dielectric layers|N. V. Dalakova,B. I. Belevtsev,E. Yu. Beliayev,O. M. Bludov,V. A. Pashchenko,M. G. Osmolovsky,O. M. Osmolovskaya|CrO2|1|%|0.23015873015873015|Themain objective of this work was studying the influence of properties andthickness of the intergranular dielectric layers, as well as CrO2 particleshape, on the magnitude of the tunneling resistance and MR of the pressedpowder.|At higher temperaturesthere was a rapid decrease of MR (up to approx 1% / T<missing VAR> at T<missing VAR> approx 200 K).
Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb|PrGe|43|%|0.25|Analysis of the energy dispersion curves at differentmagnetic phases showed that there is a competition between theDzyaloshinsky-Moriya interaction and the exchange interaction which gives riseto the magnetic ordering in PrGe.|A giant negative magnetoresistance of 43% in theantiferromagnetic phase and tunable Rashba parameter with temperature acrossthe magnetic transitions makes this material a suitable candidate fortechnological application in the antiferromagnetic spintronic devices.
Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani|CoFe/MgO|631|%|0.39344262295081966|In this study, we demonstrated TMR ratios ofup to 631% at room temperature (RT), which is two or more times larger thanthose used currently for magnetoresistive random access memory (MRAM) devices,using CoFe/MgO/CoFe(001) epitaxial MTJs.|In this study, we demonstrated TMR ratios ofup to 631% at room temperature (RT), which is two or more times larger thanthose used currently for magnetoresistive random access memory (MRAM) devices,using CoFe/MgO/CoFe(001) epitaxial MTJs.
Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani|MgO|140|%|1.0|Particularly, the TMRoscillatory behavior dominates the transport in a wide range of MgOthicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140%at RT, attributable to the appearance of large oscillatory components inresistance area product (R<missing VAR>A).|Particularly, the TMRoscillatory behavior dominates the transport in a wide range of MgOthicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140%at RT, attributable to the appearance of large oscillatory components inresistance area product (R<missing VAR>A).
Colossal transverse magnetoresistance due to nematic superconducting phase fluctuations in a copper oxide|Jonatan Wårdh,Mats Granath,Jie Wu,A. T. Bollinger,Xi He,Ivan Božović|La2-xSr|0.5|%|1.0|Using angle-resolvedtransverse resistance (ARTR) measurements, a very sensitive and background-freetechnique that can detect 0.5% anisotropy in transport, we have observed italso in La2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) for 0.02 leq x<missing VAR> leq 0.25.|Using angle-resolvedtransverse resistance (ARTR) measurements, a very sensitive and background-freetechnique that can detect 0.5% anisotropy in transport, we have observed italso in La2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) for 0.02 leq x<missing VAR> leq 0.25.
Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao|TbPdBi|98|%|0.04796511627906977|We reveal this through a systematic experimental andtheoretical study of the antiferromagnetic (AFM) half-Heusler compound TbPdBi.|Moreover,we observed a nearly isotropic, giant negative magnetoresistance with amagnitude of 98%.
Spin Tunneling in Conducting Oxides|Alexander Bratkovsky|CrO2/TiO2|30|%|0.02087081684059014|Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2, and an account of their peculiar bandstructures is presented.|Theoretically calculated direct tunneling iniron group systems leads to about a 30% change in resistance, which is close toexperimentally observed values.
Spin Tunneling in Conducting Oxides|Alexander Bratkovsky|CrO2/TiO2|4|%|0.0017482517482517485|Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2, and an account of their peculiar bandstructures is presented.|Wefind that tunneling via resonant defect states in the barrier radicallydecreases the TMR (down to 4% with Fe-based electrodes), and a resonant tunneldiode structure would give a TMR of about 8%.
Spin Tunneling in Conducting Oxides|Alexander Bratkovsky|CrO2/TiO2|8|%|0.014227642276422765|Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2, and an account of their peculiar bandstructures is presented.|Wefind that tunneling via resonant defect states in the barrier radicallydecreases the TMR (down to 4% with Fe-based electrodes), and a resonant tunneldiode structure would give a TMR of about 8%.
Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller|LuNi2B2C|90|%|0.15625|Adistinct nonlinearity in the rhoxy dependence on field H was found forLuNi2B2C in the normal state below 40K, accompanied by a largemagnetoresistance (MR) reaching 90% for H160k<missing VAR>Oe at T<missing VAR>20K.|Adistinct nonlinearity in the rhoxy dependence on field H was found forLuNi2B2C in the normal state below 40K, accompanied by a largemagnetoresistance (MR) reaching 90% for H160k<missing VAR>Oe at T<missing VAR>20K.
Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto|(La0.7Ca0.15Ce0.15MnO3)|50|%|0.16666666666666666|Whenthe system is co-doped with 50% Ca at the Ce site the system(La0.7Ca0.15Ce0.15MnO3) is driven into a insulating state suggesting that theelectrons generated by Ce4 is compensated by the holes generated by Ca2valence thus making the average valence at the rare-earth site 3 as in theparent material LaMnO3.|Whenthe system is co-doped with 50% Ca at the Ce site the system(La0.7Ca0.15Ce0.15MnO3) is driven into a insulating state suggesting that theelectrons generated by Ce4 is compensated by the holes generated by Ca2valence thus making the average valence at the rare-earth site 3 as in theparent material LaMnO3.
Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov|CO|15.5|%|0.010273972602739725|In addition, for n<missing VAR>leq 0.50 weobserve a percolative metal-insulator transition at TMI, and forTMI<T<TCO the insulating-like behavior generated by the enlargement ofX<missing VAR> with increasing T<missing VAR> is well described by the percolation law rho-1sigma sim (X-XC)t<missing VAR>, where t<missing VAR> is a critical exponent.|Furthermore, we show that onlyfor n<missing VAR>leq 0.50 the metallic fraction is above the critical percolationthreshold X<missing VAR>Csimeq 15.5%.
Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik|FC|16|%|0.3333333333333333|at a temperature close to Z<missing VAR>FC-FC branching temperature.|At 20 K, negativeMR of above 16% is observed without any hysteresis effect.
Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman|B/Cr|14|%|1.0|The saturation magnetization moments in our best films of Cr-GaNand Cr-AlN at low temperatures are 0.42 and 0.6 uB/Cr atom, respectively,indicating that 14% and 20%, of the Cr atoms, respectively, are magneticallyactive.|The saturation magnetization moments in our best films of Cr-GaNand Cr-AlN at low temperatures are 0.42 and 0.6 uB/Cr atom, respectively,indicating that 14% and 20%, of the Cr atoms, respectively, are magneticallyactive.
Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman|B/Cr|20|%|0.4444444444444444|The saturation magnetization moments in our best films of Cr-GaNand Cr-AlN at low temperatures are 0.42 and 0.6 uB/Cr atom, respectively,indicating that 14% and 20%, of the Cr atoms, respectively, are magneticallyactive.|The saturation magnetization moments in our best films of Cr-GaNand Cr-AlN at low temperatures are 0.42 and 0.6 uB/Cr atom, respectively,indicating that 14% and 20%, of the Cr atoms, respectively, are magneticallyactive.
Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik|(Tc)|20|%|0.016025641025641024|Resistance (R) versus temperature (T) measurements show that the air-annealedsamples exhibit superconductivity with superconducting transition temperature(Tc) onset at around 32 K and R<missing VAR>0 at 3.5 K.|Magnetoresistance of up to 20% is observed inN2-annealed sample at 2 K and 3 T applied field.
Investigation of the Spin Density Wave in NaxCoO2|J. Wooldridge,D. McK Paul,G. Balakrishnan,M. R. Lees|(H)|40|%|0.175|M<missing VAR>(H) loops are hysteretic below 15 K.|The system alsoexhibits a substantial (40%) positive magnetoresistance below thistemperature.
Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller|La0.67Ca0.33MnO3|10|%|0.04838709677419355|The effect of disorder on the critical properties of the ferromagnetic phasetransition in colossal magnetoresistive manganite La0.67Ca0.33MnO3 has beenstudied by substituting Ga for Mn.|It is found that, upon 10% Ga substitution,the peak in the specific heat at the Curie point T<missing VAR>C changes drastically andappears as a small anomaly.
Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik|Ca0.33MnO3|30|%|0.015755627009646302|Magnetic and electricaltransport properties of the Lu substituted LCMO [(La1-xLux)0.67Ca0.33MnO3 (0 <x<missing VAR> < 0.12)] system have been investigated and compared with those of the Y3,Pr3, Dy3 and Tb3 substituted LCMO systems.|A fairly high value of low fieldmagnetoresistance (LFMR) of about 30% is obtained in all the samples at a fieldless than 5 kOe.
Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger|(WF)|20|%|0.12844036697247707|Our data show that the large negative MR is inherent toL<missing VAR>SCO in a magnetically ordered state, in which the weak-ferromagnetic (WF)moment becomes well-defined; we discuss that the observed MR is essentially dueto the reorientation of the WF moments towards the magnetic field directionboth in the Neel state and in the spin-glass state.|In the spin-glass state, we observethat the large (up to sim20%) negative MR saturates at around 40 T, and thisMR is found to be essentially isotropic when the magnetic field is rotatedwithin the ab plane.
Magnetoresistance Effects in SrFeO(3-x): Dependence on Phase Composition and Relation to Magnetic and Charge Order|P. Adler,A. Lebon,V. Damljanovic,C. Ulrich,C. Bernhard,A. V. Boris,A. Maljuk,C. T. Lin,B. Keimer|SrFeO3|25|%|1.0|In cubic SrFeO3 (x<missing VAR>  0) a large negative MR of 25%at 9 T is associated with a hitherto unknown 60 K magnetic transition and asubsequent drop in resistivity.|In cubic SrFeO3 (x<missing VAR>  0) a large negative MR of 25%at 9 T is associated with a hitherto unknown 60 K magnetic transition and asubsequent drop in resistivity.
Magnetoresistance Effects in SrFeO(3-x): Dependence on Phase Composition and Relation to Magnetic and Charge Order|P. Adler,A. Lebon,V. Damljanovic,C. Ulrich,C. Bernhard,A. V. Boris,A. Maljuk,C. T. Lin,B. Keimer|SrFeO(3-x)|90|%|1.0|In crystals with vacancy-orderedtetragonal SrFeO(3-x) as majority phase (x<missing VAR> 0.15) a coincidentcharge/antiferromagnetic ordering transition near 70 K gives rise to a negativegiant MR effect of 90% at 9 T.|In crystals with vacancy-orderedtetragonal SrFeO(3-x) as majority phase (x<missing VAR> 0.15) a coincidentcharge/antiferromagnetic ordering transition near 70 K gives rise to a negativegiant MR effect of 90% at 9 T.
Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas|CIS|6.9|%|1.0|The CIS effect at room temperatureamounts to 6.9% R<missing VAR>-change between the high and low states and is attributed tonanostructural rearrangements of metallic ions in the electrode/barrierinterfaces.|The CIS effect at room temperatureamounts to 6.9% R<missing VAR>-change between the high and low states and is attributed tonanostructural rearrangements of metallic ions in the electrode/barrierinterfaces.
Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat|NP|100|%|0.16964285714285715|Measurements of electroresistance(ER) and current induced resistivity switching have been performed in theferromagnetic insulating state of a single crystal manganite of compositionNd0.7Pb0.3MnO3 (NPM<missing VAR>O30).|The colossalelectroresistance, arising from a strongly nonlinear dependence of resistivity(rho) on current density (j), attains a large value (approx 100%) in theferromagnetic insulating state.
Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat|(COI)|20|%|0.02663934426229508|We establish that, the behavior offerromagnetic insulating phase is distinct from the ferromagnetic metallic(FMM) phase as well as the charge ordered insulating (COI) phase, which are thetwo commonly realized ground state phases of manganites.|Concomitant withthe build-up of the ER however, is a collapse of the MR to a small value (<20%) even in magnetic field, H  7 T.
Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier|MnO3|16|%|0.008620689655172414|A temperature-dependent EXAFS investigation of La1-xCax<missing VAR>MnO3 is presentedfor the concentration range that spans the ferromagnetic-insulator (FM<missing VAR>I) toferromagnetic-metal (FMM) transition region, x<missing VAR>  0.16-0.22.|All samples are ferromagnetic although the saturation magnetization for the 16%Ca sample is only  70% of the expected value at 0.4T.
Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier|MnO3|70|%|0.01744186046511628|A temperature-dependent EXAFS investigation of La1-xCax<missing VAR>MnO3 is presentedfor the concentration range that spans the ferromagnetic-insulator (FM<missing VAR>I) toferromagnetic-metal (FMM) transition region, x<missing VAR>  0.16-0.22.|All samples are ferromagnetic although the saturation magnetization for the 16%Ca sample is only  70% of the expected value at 0.4T.
Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier|MnO3|50|%|0.002243589743589744|A temperature-dependent EXAFS investigation of La1-xCax<missing VAR>MnO3 is presentedfor the concentration range that spans the ferromagnetic-insulator (FM<missing VAR>I) toferromagnetic-metal (FMM) transition region, x<missing VAR>  0.16-0.22.|The initial distortions removed as the insulating sample becomesmagnetized are small and provides direct evidence that roughly 50% of the Mnsites have a small distortion/site and are magnetized first.
Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier|MnO3|50|%|0.0037065439672801636|A temperature-dependent EXAFS investigation of La1-xCax<missing VAR>MnO3 is presentedfor the concentration range that spans the ferromagnetic-insulator (FM<missing VAR>I) toferromagnetic-metal (FMM) transition region, x<missing VAR>  0.16-0.22.|The lack of metallic conductivity for x<missing VAR> < 0.2, when 50% or more ofthe sample is magnetic, implies that there must be preferred magnetized Mnsites and that such sites do not percolate at these concentrations.
Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth|MnGa|-10|%|1.0|Ferromagnetism requires1-10% of substitutional MnGa.|Ferromagnetism requires1-10% of substitutional MnGa.
Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth|MnGa|8|%|1.0|We presentexperiments in which by etching the (Ga,Mn)As surface oxide we achieve adramatic reduction of annealing times necessary to optimize the ferromagneticfilm after growth, and report Curie temperature of 180 K at approximately 8% ofMnGa.|We presentexperiments in which by etching the (Ga,Mn)As surface oxide we achieve adramatic reduction of annealing times necessary to optimize the ferromagneticfilm after growth, and report Curie temperature of 180 K at approximately 8% ofMnGa.
Synthesis, structural and transport properties of the hole-doped Superconductor Pr_{1-x}Sr_xFeAsO|Gang Mu,Bin Zeng,Xiyu Zhu,Fei Han,Peng Cheng,Bing Shen,Hai-Hu Wen|FeAsO|95|%|0.07058823529411765|The electrical transport properties and structure of this newsuperconductor Pr1-xSrx<missing VAR>FeAsO at different doping levels (x<missing VAR>  0.05sim0.25) were investigated systematically.|Thesuperconducting transition temperature at about 16.3 K (95% rhon) wasobserved around the doping level of 0.20sim 0.25.
Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin|H0.3|-17|%|1.0|At T<missing VAR>5 K the MRmagnitude has been -17% at H0.3 T<missing VAR> and -20% at H1.4 T<missing VAR>.|At T<missing VAR>5 K the MRmagnitude has been -17% at H0.3 T<missing VAR> and -20% at H1.4 T<missing VAR>.
Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin|H1.4|-20|%|1.0|At T<missing VAR>5 K the MRmagnitude has been -17% at H0.3 T<missing VAR> and -20% at H1.4 T<missing VAR>.|At T<missing VAR>5 K the MRmagnitude has been -17% at H0.3 T<missing VAR> and -20% at H1.4 T<missing VAR>.
Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin|H1.4|0.3|%|0.25|At T<missing VAR>5 K the MRmagnitude has been -17% at H0.3 T<missing VAR> and -20% at H1.4 T<missing VAR>.|Its magnitude decreasedfast with increase in temperature reducing to 0.3% and less for T<missing VAR>>200 K.
Molecular Magnetocapacitance|Yu-Ning Wu,Xiao-Guang Zhang,Hai-Ping Cheng|(H2O)|6|%|1.0|As a proof of principle, first-principles calculation of thenano-magnet [Mn3O(sao)3(O2CMe)(H2O)(py)3] shows that the charging energy of thehigh-spin state is 260 meV lower than that of the low-spin state, yielding a 6%difference in capacitance.|As a proof of principle, first-principles calculation of thenano-magnet [Mn3O(sao)3(O2CMe)(H2O)(py)3] shows that the charging energy of thehigh-spin state is 260 meV lower than that of the low-spin state, yielding a 6%difference in capacitance.
Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat|TaAs|25|%|1.0|Atroom temperature with application of 8 Tesla magnetic field, large positivemagnetoresistance is found for TaAs (25%), MnAs (90%) and for NbAs (75%).|Atroom temperature with application of 8 Tesla magnetic field, large positivemagnetoresistance is found for TaAs (25%), MnAs (90%) and for NbAs (75%).
Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat|MnAs|90|%|1.0|Atroom temperature with application of 8 Tesla magnetic field, large positivemagnetoresistance is found for TaAs (25%), MnAs (90%) and for NbAs (75%).|Atroom temperature with application of 8 Tesla magnetic field, large positivemagnetoresistance is found for TaAs (25%), MnAs (90%) and for NbAs (75%).
Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat|NbAs|75|%|1.0|Atroom temperature with application of 8 Tesla magnetic field, large positivemagnetoresistance is found for TaAs (25%), MnAs (90%) and for NbAs (75%).|Atroom temperature with application of 8 Tesla magnetic field, large positivemagnetoresistance is found for TaAs (25%), MnAs (90%) and for NbAs (75%).
Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts|CrO2|0.2|%|0.06382978723404255|We compare the behavior of the magnetothermoelectric power (MTEP)in metallicferromagnetic thin films of Ni80Fe20 (Permalloy; Py), Co and CrO2 attemperatures in the range of 100 K to 400 K.|In 25 nm thick Py films and 50 nmthick Co films both the anisotropic magnetoresistance (AMR) and MTEP show arelative change in resistance and thermoelectric power (TEP) of the order of0.2% when the magnetic field is reversed, and in both cases there is nosignificant change in AMR or MTEP any more after the saturation field has beenreached.
Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts|CrO2|1|%|0.03698224852071006|Itappears that the low-field effects are due to magnetic domain switching, whilethe high-field effects are intrinsic to the electronic structure of CrO2.|The MTEP behavior at low fields shows peaks similar to the AMR inthese films, with variations up to 1%.
Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts|CrO2|1.5|%|0.041666666666666664|Itappears that the low-field effects are due to magnetic domain switching, whilethe high-field effects are intrinsic to the electronic structure of CrO2.|With increasing field both the MR andthe MTEP variations keeps growing, with MTEP showing relative changes of 1.5%with the thermal gradient along the b<missing VAR>-axis and even 20% with the gradient alongthe c<missing VAR>-axis, with an intermediate value of 3% for the film on sapphire.
Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts|CrO2|20|%|0.17708333333333334|Itappears that the low-field effects are due to magnetic domain switching, whilethe high-field effects are intrinsic to the electronic structure of CrO2.|With increasing field both the MR andthe MTEP variations keeps growing, with MTEP showing relative changes of 1.5%with the thermal gradient along the b<missing VAR>-axis and even 20% with the gradient alongthe c<missing VAR>-axis, with an intermediate value of 3% for the film on sapphire.
Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts|CrO2|3|%|0.4701492537313433|Itappears that the low-field effects are due to magnetic domain switching, whilethe high-field effects are intrinsic to the electronic structure of CrO2.|With increasing field both the MR andthe MTEP variations keeps growing, with MTEP showing relative changes of 1.5%with the thermal gradient along the b<missing VAR>-axis and even 20% with the gradient alongthe c<missing VAR>-axis, with an intermediate value of 3% for the film on sapphire.
Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya|(H)|-3|%|0.10526315789473684|The Magnetoresistance (MR(H))displayed an approximate linear behavior in the high field regime (H > 796k<missing VAR>A/m), with a maximum value at room-temperature of sim2-3% for H  1592 kA/m<missing VAR>,irrespective from the transport mechanism.|The Magnetoresistance (MR(H))displayed an approximate linear behavior in the high field regime (H > 796k<missing VAR>A/m), with a maximum value at room-temperature of sim2-3% for H  1592 kA/m<missing VAR>,irrespective from the transport mechanism.
Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston|ThCr2Si2|15|%|0.8181818181818182|X<missing VAR>-ray diffraction analysis of crushed crystals at roomtemperature confirm the collapsed tetragonal ThCr2Si2-type structure with sim15% vacancies on the Cu sites as previously reported, corresponding to thecomposition CaCu1.7As2.|X<missing VAR>-ray diffraction analysis of crushed crystals at roomtemperature confirm the collapsed tetragonal ThCr2Si2-type structure with sim15% vacancies on the Cu sites as previously reported, corresponding to thecomposition CaCu1.7As2.
Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston|BaFe2As2|8.7|%|0.0018050541516245486|The chi is larger in the ab-plane than along the c<missing VAR>-axis, asalso observed previously for SrCu2As2 and for pure and doped BaFe2As2.|A positive magnetoresistance is observed below Tt that increases withdecreasing T<missing VAR> and attains a value in H  8.0 T of 8.7% at T<missing VAR>  1.8 K.
Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2|Bibekananda Maji,K. G. Suresh,A. K. Nigam|NdRu2Ge2|42|%|0.003968253968253968|It is found that the polycrystalline NdRu2Ge2 undergoes two successivemagnetic transitions at Tt10 K and T<missing VAR>N19 K.|The highest value of negative MR near T<missing VAR>N is about 42% in afield of 30 kOe, while the positive MR is about 35 % at 3 K in a field of 50k<missing VAR>Oe.
Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin|Zn1-x|-50|%|0.5|The magnetic properties of Zn1-xMnxGeAs2 samples showthat the random Mn-distribution in the cation sites of the host lattice occursonly for the sample with the lowest Mn-content, x<missing VAR>0.003.|We found that the negativemagnetoresistance (MR) with maximum values of about -50% is related to the weaklocalization phenomena.
Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm|Bi2Se3|1000|%|1.0|We demonstrate thatthe material properties of Bi2Se3 allow a TMR ratio at roomtemperature of the order of 1000%.|We demonstrate thatthe material properties of Bi2Se3 allow a TMR ratio at roomtemperature of the order of 1000%.
High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely|YB6|-0.59|%|0.01968503937007874|Pressure effect on superconducting properties of two YB6 samples (Tc  5.9and 7.5 K) were investigated by measurements of electrical resistivity,magnetic susceptibility, and X<missing VAR>-ray diffraction in the pressure range up to 320kbar.|Magnetoresistivity measurements down to 60 mK and up to 47 kbar haveshown a negative pressure effect on Tc as well as on the third critical fieldHc3 with the slopes dlnTc/dp  -0.59%/kbar and dlnHc3/dp  -1.1%/kbar,respectively.
High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely|YB6|-1.1|%|0.07042253521126761|Pressure effect on superconducting properties of two YB6 samples (Tc  5.9and 7.5 K) were investigated by measurements of electrical resistivity,magnetic susceptibility, and X<missing VAR>-ray diffraction in the pressure range up to 320kbar.|Magnetoresistivity measurements down to 60 mK and up to 47 kbar haveshown a negative pressure effect on Tc as well as on the third critical fieldHc3 with the slopes dlnTc/dp  -0.59%/kbar and dlnHc3/dp  -1.1%/kbar,respectively.
High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely|YB6|14|%|0.0350076103500761|Pressure effect on superconducting properties of two YB6 samples (Tc  5.9and 7.5 K) were investigated by measurements of electrical resistivity,magnetic susceptibility, and X<missing VAR>-ray diffraction in the pressure range up to 320kbar.|The lattice parameter measurements revealed the volume reduction of14% at 320 kbar.
Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani|MgO/CoFe|175|%|0.8260869565217391|A tunnel magnetoresistance(TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure ona 7.5-nm-thick MgO buffer.|A tunnel magnetoresistance(TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure ona 7.5-nm-thick MgO buffer.
Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström|SrTiO3|-1.5|%|0.45555555555555555|STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.|Themeasurements reveal two types of low field magnetoresistance (LFMR) with amagnitude of sim 0.1-1.5%.
Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi|Sr2IrO4|16|%|1.0|Using nano-scale contacts between a sharpened Cu tip and a single crystal ofSr2IrO4, we apply a variable external electric field up to a few M<missing VAR>V/m<missing VAR> anddemonstrate a continuous reduction in the band gap of Sr2IrO4 by as much as16%.|Using nano-scale contacts between a sharpened Cu tip and a single crystal ofSr2IrO4, we apply a variable external electric field up to a few M<missing VAR>V/m<missing VAR> anddemonstrate a continuous reduction in the band gap of Sr2IrO4 by as much as16%.
Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu|NbP|1|%|0.25|However, with a minimal doping ofsim1% Cr, the mobility of NbP is degraded by more than two order ofmagnitude, due to the invalid of helicity protection to magnetic impurities.|However, with a minimal doping ofsim1% Cr, the mobility of NbP is degraded by more than two order ofmagnitude, due to the invalid of helicity protection to magnetic impurities.
Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates|Cai-Zhen Li,Jin-Guang Li,Li-Xian Wang,Liang Zhang,Jing-Min Zhang,Dapeng Yu,Zhi-Min Liao|Na3Bi|2000|%|0.5|Our results are valuable for understanding the experimentalobservations related to the two-carrier transport in Dirac/Weyl semimetals,such as Na3Bi, ZrTe5, TaAs, NbAs, and HfTe5.|Themagnetoresistance exhibits a large non-saturating value up to 2000% at hightemperatures, which is ascribed to the electron-hole compensation in thesystem.
Picosecond all-optical switching of magnetic tunnel junctions|Jun-Yang Chen,Li He,Jian-Ping Wang,Mo Li|GdFeCo|0.6|%|1.0|This first optically switchable MTJ uses ferrimagneticGdFeCo as the free layer, and its switching is directly readout by measuringits tunneling magnetoresistance with a DR/R<missing VAR> ratio of 0.6%.|This first optically switchable MTJ uses ferrimagneticGdFeCo as the free layer, and its switching is directly readout by measuringits tunneling magnetoresistance with a DR/R<missing VAR> ratio of 0.6%.
Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka|GaAs|130|%|0.2545454545454545|Here, using aferromagnetic-semiconductor GaMnAs-based vertical spin M<missing VAR>OSFET with a GaAschannel layer, we demonstrate a large drain-source current ID<missing VAR>S modulation by agate-source voltage VG<missing VAR>S with a modulation ratio up to 130%, which is thelargest value that has ever been reported for vertical spin field-effecttransistors thus far.|Here, using aferromagnetic-semiconductor GaMnAs-based vertical spin M<missing VAR>OSFET with a GaAschannel layer, we demonstrate a large drain-source current ID<missing VAR>S modulation by agate-source voltage VG<missing VAR>S with a modulation ratio up to 130%, which is thelargest value that has ever been reported for vertical spin field-effecttransistors thus far.
Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka|OSF|7|%|1.0|This device shows a tunneling magnetoresistance (TMR)ratio up to 7%, which is larger than that of the planar-type spin M<missing VAR>OSFE<missing VAR>Ts,indicating that ID<missing VAR>S can be controlled by the magnetization configuration.|This device shows a tunneling magnetoresistance (TMR)ratio up to 7%, which is larger than that of the planar-type spin M<missing VAR>OSFE<missing VAR>Ts,indicating that ID<missing VAR>S can be controlled by the magnetization configuration.
Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. A. Prudkoglyad,V. P. Martovitskii,Yu. G. Selivanov,E. G. Chizhevskii|Bi2Se3|0.02|%|1.0|To address this question we growhigh quality single crystals of Srx<missing VAR>Bi2Se3, perform detailed X<missing VAR>-raydiffraction and magnetotransport studies and reveal that the observedsuperconducting nematicity direction correlates with the direction of smallstructural distortions in these samples( sim 0.02% elongation in onecrystallographic direction).|To address this question we growhigh quality single crystals of Srx<missing VAR>Bi2Se3, perform detailed X<missing VAR>-raydiffraction and magnetotransport studies and reveal that the observedsuperconducting nematicity direction correlates with the direction of smallstructural distortions in these samples( sim 0.02% elongation in onecrystallographic direction).
Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad|CFO|15|%|1.0|On theother hand, when the CFO content is increased (15%), the upturn shows strongrobustness against high magnetic field (14 T) and a crossover in temperaturevariation from lnT<missing VAR> to T<missing VAR>1/2 at the Kondo temperature, indicating the appearanceof orbital 2CK effect.|On theother hand, when the CFO content is increased (15%), the upturn shows strongrobustness against high magnetic field (14 T) and a crossover in temperaturevariation from lnT<missing VAR> to T<missing VAR>1/2 at the Kondo temperature, indicating the appearanceof orbital 2CK effect.
Spin heat accumulation and spin-dependent temperatures in nanopillar spin valves|F. K. Dejene,J. Flipse,G. E. W. Bauer,B. J. van Wees|SH|10|%|0.6808510638297872|Using3D<missing VAR> finite element modeling spin heat accumulation (SHA) values of 120 mK and350 m<missing VAR>K are extracted at room temperature and 77 K, respectively, which is ofthe order of 10% of the total temperature bias over the pillar.|Using3D<missing VAR> finite element modeling spin heat accumulation (SHA) values of 120 mK and350 m<missing VAR>K are extracted at room temperature and 77 K, respectively, which is ofthe order of 10% of the total temperature bias over the pillar.
Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha|ZnO|2|%|0.06382978723404255|Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % havebeen grown by sequential pulsed laser deposition on sapphire substrates.|Theresistivity of the films first decreased from  6.6x10-3 to 4.7x10-4 ohm-cm asthe Si concentration was increased from  0.4 to 2% and then it increased withfurther increase in Si concentration.
Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha|ZnO|10|%|0.42857142857142855|However, temperature dependent resistivity measurements in the range from 300to 4.2 K revealed negative temperature coefficient of resistivity (TCR) for the0.4, 6 and 10% Si doped ZnO films in the entire measurement temperature range.|However, temperature dependent resistivity measurements in the range from 300to 4.2 K revealed negative temperature coefficient of resistivity (TCR) for the0.4, 6 and 10% Si doped ZnO films in the entire measurement temperature range.
Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha|ZnO|2|%|0.0625|However, temperature dependent resistivity measurements in the range from 300to 4.2 K revealed negative temperature coefficient of resistivity (TCR) for the0.4, 6 and 10% Si doped ZnO films in the entire measurement temperature range.|The 0.6, 0.9 and 2% Si doped films showed a transition from negative topositive TCR with increasing temperature.
Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi|Te0.6Se0.4|17|%|0.4666666666666667|The obviouschange of transport properties after the annealing indicates that the bandstructure of Fe1y<missing VAR>Te0.6Se0.4 is affected by the excess Fe.|Inparticular, a strongly nonlinear Hall resistivity was observed only in thefully-annealed crystal, and the magnetoresistance (MR) is drastically enhancedafter annealing, reaching a value larger than 17% at 16 K and 14 T.
Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia|NbAs2|105|%|1.0|Both of them exhibit metallic behavior under zeromagnetic field, and a metal-to-insulator transition occurs when a nonzeromagnetic field is applied, resulting in XMR (1.0105% for NbAs2 and 7.3105%for TaAs2 at 2.5 K  14 T).|Both of them exhibit metallic behavior under zeromagnetic field, and a metal-to-insulator transition occurs when a nonzeromagnetic field is applied, resulting in XMR (1.0105% for NbAs2 and 7.3105%for TaAs2 at 2.5 K  14 T).
Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia|NbAs2|105|%|1.0|Both of them exhibit metallic behavior under zeromagnetic field, and a metal-to-insulator transition occurs when a nonzeromagnetic field is applied, resulting in XMR (1.0105% for NbAs2 and 7.3105%for TaAs2 at 2.5 K  14 T).|Both of them exhibit metallic behavior under zeromagnetic field, and a metal-to-insulator transition occurs when a nonzeromagnetic field is applied, resulting in XMR (1.0105% for NbAs2 and 7.3105%for TaAs2 at 2.5 K  14 T).
Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu|PN|68|%|0.3392857142857143|Using depth sensitive X<missing VAR>-ray reflectivity and polarized neutron reflectivity(PNR) we observed two layer structures for the Co film grown by ED with asurface layer (thickness  100 AA) of reduced density ( 68% of bulk)compared to rest of the Co film (thickness  250 AA).|Using depth sensitive X<missing VAR>-ray reflectivity and polarized neutron reflectivity(PNR) we observed two layer structures for the Co film grown by ED with asurface layer (thickness  100 AA) of reduced density ( 68% of bulk)compared to rest of the Co film (thickness  250 AA).
Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck|MgO|3.8|%|1.0|A large density of misfit dislocations in the Heuslerbased MTJs has been insured by a thick MgO barrier and its 3.8% latticemismatch with the Co2FeAl electrode.|A large density of misfit dislocations in the Heuslerbased MTJs has been insured by a thick MgO barrier and its 3.8% latticemismatch with the Co2FeAl electrode.
A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai|Fe/MgAl2O4|160|%|1.0|Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.|Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.
A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai|Fe/MgO|1600|%|1.0|Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.|Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.
Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir|CeRuSn|25|%|0.421875|Magnetization shows that below T<missing VAR>rm N CeRuSn undergoes a metamagnetictransition when applying a magnetic field of 1.5 and 0.8 T along the a andc<missing VAR>--axis, respectively.|This transition manifests in a tremendous negativejump of sim 25% in the magnetoresistance.
Spin Filtering through Single-Wall Carbon Nanotubes Functionalized with Single-Stranded DNA|Kazi M. Alam,Sandipan Pramanik|SWCN|50|%|0.5|Here we consider carrier transport in an archetypical one-dimensional molecularhybrid in which a single wall carbon nanotube (SWCNT) is wrapped around bysingle stranded deoxyribonucleic acid (ssD<missing VAR>NA).|Common spin filters include transition metal ferromagnets andtheir alloys, with typical spin selectivity (or, polarization) 50% or less.
Ferroic collinear multilayer magnon spin valve|Joel Cramer,Felix Fuhrmann,Ulrike Ritzmann,Vanessa Gall,Tomohiko Niizeki,Rafael Ramos,Zhiyong Qiu,Dazhi Hou,Takashi Kikkawa,Jairo Sinova,Ulrich Nowak,Eiji Saitoh,Mathias Kläui|Y3Fe5O12|120|%|0.43333333333333335|We find in Y3Fe5O12CoOCotri-layers that the detected spin signal depends on the relative alignment ofY3Fe5O12 and Co.|This demonstrates a spin valve behavior with an effectamplitude of 120% in our systems.
Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun|Cr0.68Se|83.7|%|0.0625|There are some interesting phenomena (i) Cr0.68Se presents anon-collinear antiferromagnetic (AFM) semiconducting behavior with the Neeltemperature T<missing VAR>N  42 K and the activated energy Eg3.9 meV; (ii) It exhibits theanomalous Hall effect (AHE) below T<missing VAR>N and large negative magnetoresistance (MR)about 83.7% (2 K, 8.5 T).|There are some interesting phenomena (i) Cr0.68Se presents anon-collinear antiferromagnetic (AFM) semiconducting behavior with the Neeltemperature T<missing VAR>N  42 K and the activated energy Eg3.9 meV; (ii) It exhibits theanomalous Hall effect (AHE) below T<missing VAR>N and large negative magnetoresistance (MR)about 83.7% (2 K, 8.5 T).
Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6|Zhisheng Lin,Mark Lohmann,Zulfikhar A. Ali,Chi Tang,Junxue Li,Wenyu Xing,Jiangnan Zhong,Shuang Jia,Wei Han,Sinisa Coh,Ward Beyermann,Jing Shi|Cr2Ge2Te6|100|%|0.003787878787878788|Anisotropic magnetoresistance (AMR) of Cr2Ge2Te6 (CGT), a layeredferromagnetic insulator, is investigated under an applied hydrostatic pressureup to 2 GPa.|Upon application of a hydrostatic pressure>1 G<missing VAR>Pa, the uniaxialanisotropy switches to easy-plane anisotropy which drives the equilibriummagnetization from the c<missing VAR>-axis to the ab-plane at zero magnetic field, whichamounts to a giant magnetic anisotropy energy change (>100%).
Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction|Tiancheng Song,Matisse Wei-Yuan Tu,Caitlin Carnahan,Xinghan Cai,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu|CrI3|0|%|0.061567164179104475|Here we report voltage control of TMR formed byfour-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gatedstructure.|In addition, without switching the state, the TMR can be continuouslymodulated between 17,000% and 57,000%, due to the combination of spin-dependenttunnel barrier with changing carrier distributions in the graphene contacts.
Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction|Tiancheng Song,Matisse Wei-Yuan Tu,Caitlin Carnahan,Xinghan Cai,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu|CrI3|0|%|0.07092198581560284|Here we report voltage control of TMR formed byfour-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gatedstructure.|In addition, without switching the state, the TMR can be continuouslymodulated between 17,000% and 57,000%, due to the combination of spin-dependenttunnel barrier with changing carrier distributions in the graphene contacts.
Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski|PtTe2|3000|%|0.8888888888888888|Themagnetoresistance (MR) of PtTe2 is large (over 3000% at T<missing VAR>1.8 K inB9 T) and unsaturated in strong fields in the entire temperature rangestudied.|Themagnetoresistance (MR) of PtTe2 is large (over 3000% at T<missing VAR>1.8 K inB9 T) and unsaturated in strong fields in the entire temperature rangestudied.
Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha|Mn2Sb|-10|%|0.2857142857142857|It shows thattransition temperature (Tt) can be tuned between 119K - 271K bysubstituting 2.5-10% Ge at Sb site in Mn2Sb.|It shows thattransition temperature (Tt) can be tuned between 119K - 271K bysubstituting 2.5-10% Ge at Sb site in Mn2Sb.
Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha|(FCW)|70|%|0.04201680672268908|It along with non-monotonic variation oflower critical field, open loop in isothermal MR and increasing difference inzero field cooled warming (Z<missing VAR>FCW) and field cooled warming (FCW) resistivitywith increasing magnetic field shows that FR<missing VAR>I to AFM<missing VAR> transition is kineticallyarrested in the case of 2.5% Ge substitution.|With the application of magnetic fieldTt shifts to low temperature, which results in a giant negativemagnetoresistance (MR) reaching a value of 70% for 2.5% substitution.
Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha|(FCW)|2.5|%|0.03289473684210526|It along with non-monotonic variation oflower critical field, open loop in isothermal MR and increasing difference inzero field cooled warming (Z<missing VAR>FCW) and field cooled warming (FCW) resistivitywith increasing magnetic field shows that FR<missing VAR>I to AFM<missing VAR> transition is kineticallyarrested in the case of 2.5% Ge substitution.|With the application of magnetic fieldTt shifts to low temperature, which results in a giant negativemagnetoresistance (MR) reaching a value of 70% for 2.5% substitution.
Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha|(FCW)|2.5|%|0.06818181818181818|It along with non-monotonic variation oflower critical field, open loop in isothermal MR and increasing difference inzero field cooled warming (Z<missing VAR>FCW) and field cooled warming (FCW) resistivitywith increasing magnetic field shows that FR<missing VAR>I to AFM<missing VAR> transition is kineticallyarrested in the case of 2.5% Ge substitution.|It along with non-monotonic variation oflower critical field, open loop in isothermal MR and increasing difference inzero field cooled warming (Z<missing VAR>FCW) and field cooled warming (FCW) resistivitywith increasing magnetic field shows that FR<missing VAR>I to AFM<missing VAR> transition is kineticallyarrested in the case of 2.5% Ge substitution.
A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu|MnPt|11.2|%|0.029166666666666667|Here, we combine the two material classesto explore changes of the resistance of the high-Neel-temperatureantiferromagnet MnPt induced by piezoelectric strain.|The tunneling anisotropicmagnetoresistance reaches 11.2% at room temperature.
Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$|Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang|CrTe2|-0.6|%|0.5862068965517241|Spintransport measurements indicate an in-plane room temperature negativeanisotropic magnetoresistance (AMR) in few-layered CrTe2, but a signchange in the AMR at lower temperature, with -0.6% at 300 K and 5% at 10K, respectively.|Spintransport measurements indicate an in-plane room temperature negativeanisotropic magnetoresistance (AMR) in few-layered CrTe2, but a signchange in the AMR at lower temperature, with -0.6% at 300 K and 5% at 10K, respectively.
Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$|Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang|CrTe2|5|%|0.21052631578947367|Spintransport measurements indicate an in-plane room temperature negativeanisotropic magnetoresistance (AMR) in few-layered CrTe2, but a signchange in the AMR at lower temperature, with -0.6% at 300 K and 5% at 10K, respectively.|Spintransport measurements indicate an in-plane room temperature negativeanisotropic magnetoresistance (AMR) in few-layered CrTe2, but a signchange in the AMR at lower temperature, with -0.6% at 300 K and 5% at 10K, respectively.
First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic|CrI3|240|%|0.2911392405063291|We explain the mechanism of this reversiblecurrent-driven nonequilibrium phase transition by showing that first monolayerof CrI3 carries current due to evanescent wavefunctions injected by metallictransition metal dichalcogenide TaSe2, while concurrently acquiring strongspin-orbit coupling (SOC) via such proximity effect, whereas the secondmonolayer of CrI3 remains insulating.|The transition can be detected bypassing vertical read current through the vdW heterostructure, encapsulated bybilayer of hexagonal boron nitride and sandwiched between graphite electrodes,where we find tunneling magnetoresistance of simeq 240%.
Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka|InAs|2|%|0.14285714285714285|Here, we report a giant OMR as largeas 27% in edge transport channels of an InAs quantum well, which is magnetizedby a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sblayer.|This unusualphenomenon, called odd-parity magnetoresistance (OMR), was hitherto subtle (<2%) and hard to control by external means.
Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka|InAs|27|%|0.7333333333333333|Here, we report a giant OMR as largeas 27% in edge transport channels of an InAs quantum well, which is magnetizedby a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sblayer.|Here, we report a giant OMR as largeas 27% in edge transport channels of an InAs quantum well, which is magnetizedby a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sblayer.
First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng|MgO|-20|%|0.13333333333333333|We perform a first-principles transport study on MTJsusing disordered electrodes modeled using the virtual crystal approximation(VCA) and ordered alloys with various MgO barrier thicknesses.|We find that10-20% Co concentration maximizes TMR using VCA to represent disorder in theelectrodes.
Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai|FeSe|14|%|0.09090909090909091|14% Sdoping is found significantly suppress the structural transition from Tssim 86 K in FeSe to sim 49 K, although the superconducting transitiontemperature, Tc, is only slightly affected.|14% Sdoping is found significantly suppress the structural transition from Tssim 86 K in FeSe to sim 49 K, although the superconducting transitiontemperature, Tc, is only slightly affected.
Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom|Gd3Ir4Sn13|80|%|1.0|Giant, positivemagnetoresistance (MR) approx 80% is observed in Gd3Ir4Sn13 at2K with the application of 9T<missing VAR>.|Giant, positivemagnetoresistance (MR) approx 80% is observed in Gd3Ir4Sn13 at2K with the application of 9T<missing VAR>.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|15|%|0.5522388059701493|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|107|%|1.0|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|10|%|1.0|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|8|%|1.0|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|43|%|1.0|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|7|%|1.0|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|50|%|1.0|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|-3.9|%|1.0|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|70|%|1.0|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|30|%|1.0|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Magnetoresistance and robust resistivity plateau in MoAs2|Jialu Wang,Lin Li,Wei You,Tingting Wang,Chao Cao,Jianhui Dai,Yuke Li|MoAs2|2600|%|0.25|Transport measurements show that MoAs2displays a metallic behavior at zero field and undergoes ametal-to-semiconductor crossover at low temperatures when the applied magneticfield is over 5 T.|A large positive magnetoresistance (MR), reachingabout 2600% at 2 K and 9 T, is observed when the field is perpendicular to thecurrent.
Unconventional Large Linear Magnetoresistance in Cu$_{2-x}$Te|Ali A. Sirusi,Alexander Page,Lucia Steinke,Meigan C. Aronson,Ctirad Uher,Joseph H. Ross Jr|Cu2-xTe|250|%|1.0|We report a large linear magnetoresistance in Cu2-xTe, reachingDeltarho/rho(0)  250% at 2 K in a 9 T field.|We report a large linear magnetoresistance in Cu2-xTe, reachingDeltarho/rho(0)  250% at 2 K in a 9 T field.
Gigantic negative magnetoresistance in a disordered topological insulator|Oliver Breunig,Zhiwei Wang,A. A. Taskin,Jonathan Lux,Achim Rosch,Yoichi Ando|TlBi0.15Sb0.85Te2|98|%|1.0|In the newly-synthesized bulk-insulating topologicalinsulator TlBi0.15Sb0.85Te2, we observed gigantic negative MRreaching 98% in 14 T at 10 K, which is unprecedented in a nonmagnetic system.|In the newly-synthesized bulk-insulating topologicalinsulator TlBi0.15Sb0.85Te2, we observed gigantic negative MRreaching 98% in 14 T at 10 K, which is unprecedented in a nonmagnetic system.
Giant anomalous Hall effect in a ferromagnetic Kagome-lattice semimetal|Enke Liu,Yan Sun,Nitesh Kumar,Lukas Meuchler,Aili Sun,Lin Jiao,Shuo-Ying Yang,Defa Liu,Aiji Liang,Qiunan Xu,Johannes Kroder,Vicky Seuss,Horst Borrmann,Chandra Shekhar,Zhaosheng Wang,Chuanying Xi,Wenhong Wang,Walter Schnelle,Steffen Wirth,Yulin Chen,Sebastian T. B. Goennenwein,Claudia Felser|Co3Sn2S2|20|%|0.5|Combining the Kagome-lattice structureand the long-range out-of-plane ferromagnetic order of Co3Sn2S2, we expect thatthis material is an excellent candidate for observation of the quantumanomalous Hall state in the two-dimensional limit.|Owing to the low carrier densityin this material and the significantly enhanced Berry curvature from its bandstructure, the anomalous Hall conductivity and the anomalous Hall anglesimultaneously reach 1130 S cm-1 and 20%, respectively, an order of magnitudelarger than typical magnetic systems.
Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny|CrO2/MgB2|45|%|1.0|We also measure the magnetoresistance for the entire series ofCrO2/MgB2 samples, with a maximum of approximately 45% observed near thepercolation threshold at liquid He temperatures.|We also measure the magnetoresistance for the entire series ofCrO2/MgB2 samples, with a maximum of approximately 45% observed near thepercolation threshold at liquid He temperatures.
Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov|Fe/MgO/Fe|0|%|1.0|Our calculations also show that theemphcombination of the symmetry spin filtering effect and small surfacetransmission function in minority spin channel at the Fe/MgO interface isresponsible for large TMR>10,000% predicted for Fe/MgO/Fe MTJ for Ngeqslant 8.|Our calculations also show that theemphcombination of the symmetry spin filtering effect and small surfacetransmission function in minority spin channel at the Fe/MgO interface isresponsible for large TMR>10,000% predicted for Fe/MgO/Fe MTJ for Ngeqslant 8.
Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates|G. Fábián,P. Makk,M. H. Madsen,J. Nygård,C. Schönenberger,A. Baumgartner|InAs|25|%|0.045081967213114756|We present magnetoresistance (MR) experiments on an InAs nanowire quantum dotdevice with two ferromagnetic sidegates (FSGs) in a split-gate geometry.|In both regimes we find a strong MR and asharp MR switching of up to 25% at the field at which the magnetizations ofthe FSGs are inverted by the external field.
Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu|Sb2Se2Te|1100|%|0.04807692307692308|We have studied the magnetotransport properties of a Sb2Se2Te singlecrystal.|Magnetoresistance (MR) is maximum when the magnetic field isperpendicular to the sample surface and reaches to a value of 1100% at B31T<missing VAR> with no sign of saturation.
Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers|Giordano Mattoni,David J. Baek,Nicola Manca,Nils Verhagen,Lena F. Kourkoutis,Alessio Filippetti,Andrea D. Caviglia|WO3|900|%|0.5|The studied system shows a sharp insulator-to-metaltransition as a function of both LaAlO3 and WO3 layer thickness.|Low-temperature magnetotransport reveals a strong magnetoresistance reaching900% at 10 T and 1.5 K, the presence of multiple conduction channels withcarrier mobility up to 80 000 cm2/Vs and an unusually high effective mass of5.6 me.
Anomalous magnetotransport properties of high-quality single crystals of Weyl semimetal WTe2: Sign change of Hall resistivity|Rajveer Jha,Ryuji Higashinaka,Tatsuma D. Matsuda,Raquel A. Ribeiro,Yuji Aoki|WTe2|1|%|0.04356060606060606|We report on a systematic study of Hall effect using high quality singlecrystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c<missing VAR>.|The difference between ne and nh is 1% at 2 K, indicating that thesystem is in an almost compensated condition.
Spin Filtering with Poly-T Wrapped Single Wall Carbon Nanotubes|K. M. Alam,Sandipan Pramanik|(CISS)|50|%|0.2222222222222222|Recently, chiral systems such as D<missing VAR>NA have been shown to exhibit efficient spinfiltering, a phenomenon often dubbed as chirality induced spin selectivity(CISS).|Transition metal ferromagnets areused as spin filters in most cases, though their spin filtering efficiency isonly around 50%, thereby limiting the efficiency of spintronic devices.
Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair|(HC)|-30|%|0.16666666666666666|The magnetic entropy change across MTfor a selected sample (Mn49FeNi40Sn9In) has been estimated from three differentmeasurement methods (isofield magnetization (M) vs temperature (T), isothermalM<missing VAR> vs field (H) and heat capacity (HC) vs T).|Moreover, an exchange bias field  783 Oeat 5 K and a magnetoresistance of -30% are also obtained in one of thesematerials.
Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang|SO|70|%|1.0|We also compare our device to aSTT-MRAM<missing VAR> cell built with the same architecture and show that critical writecurrent in the SOT-MRAM<missing VAR> cell is reduced by more than 70%.|We also compare our device to aSTT-MRAM<missing VAR> cell built with the same architecture and show that critical writecurrent in the SOT-MRAM<missing VAR> cell is reduced by more than 70%.
Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun|TaIrTe4|19.2|%|1.0|Our high pressureX<missing VAR>-ray diffraction measurements reveal that, at around the critical pressure thelattice of the TaIrTe4 sample is distorted by the application of pressure andits volume is reduced by 19.2%, the value of which is predicted to result inthe change of the electronic structure significantly.|Our high pressureX<missing VAR>-ray diffraction measurements reveal that, at around the critical pressure thelattice of the TaIrTe4 sample is distorted by the application of pressure andits volume is reduced by 19.2%, the value of which is predicted to result inthe change of the electronic structure significantly.
Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta|NFO|50|%|0.45454545454545453|A comparison of the obtained SMR magnitudefor charge currents applied in the [100]- and [110]-direction of NFO yields achange of 50% for Pt at room temperature.|A comparison of the obtained SMR magnitudefor charge currents applied in the [100]- and [110]-direction of NFO yields achange of 50% for Pt at room temperature.
Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki|BaMn2|-98|%|0.11363636363636363|We report the discovery of a novel giant magnetoresistance (GMR) phenomenonin a family of BaMn2Pn2 antiferromagnets (Pn stands for P, As, Sb,and Bi) with a parity-time symmetry.|The resistivities of these materials arereduced by 60 times in magnetic fields (vecHs), thus yielding the GMRof about -98%.
Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara|BN|5|%|0.5|The error rates can be reduced to 2.5% byusing a 784times500times500times500times10 D<missing VAR>BN at the cost ofsim10times higher energy consumption and significant area overhead.|The software and hardware level simulations indicate thata 784times200times10 topology can achieve less than 5% error rates withsim400 pJ energy consumption.
Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara|BN|2.5|%|1.0|The error rates can be reduced to 2.5% byusing a 784times500times500times500times10 D<missing VAR>BN at the cost ofsim10times higher energy consumption and significant area overhead.|The error rates can be reduced to 2.5% byusing a 784times500times500times500times10 D<missing VAR>BN at the cost ofsim10times higher energy consumption and significant area overhead.
Tuning insulator-semimetal transitions in 3D topological insulator thin films by inter-surface hybridization and in-plane magnetic fields|Yang Xu,Guodong Jiang,Ireneusz Miotkowski,Rudro R. Biswas,Yong P. Chen|(SS)|-95|%|0.25|Here, we reporttransport studies on thin films of BiSbTeSe2 (BST<missing VAR>S), which is a 3D T<missing VAR>I thathosts spin-helical gapless (semi-metallic) Dirac fermion surface states (SS)for sufficiently thick samples, with an observed resistivity close to h<missing VAR>/4e<missing VAR>2at the charge neutral point.|Furthermore, we observe that an in-plane magnetic field candrive the system again towards a metallic behavior, with a prominent negativemagnetoresistance (MR, up to sim-95%) and a temperature-insensitiveresistivity close to h<missing VAR>/2e<missing VAR>2 at the charge neutral point.
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami|MgO|87|%|0.5|Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.|The saturation magnetization is 380emu/cm3, almost the same as the value given by the Slater--Pauling--likerule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87%and 165%, respectively.
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami|MgO|165|%|0.5|Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.|The saturation magnetization is 380emu/cm3, almost the same as the value given by the Slater--Pauling--likerule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87%and 165%, respectively.
Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2|Hongyuan Wang,Hao Su,Jiuyang Zhang,Wei Xia,Yishi Lin,Xiaolei Liu,Xiaofei Hou,Zhenhai Yu,Na Yu,Xia Wang,Zhiqiang Zou,Yihua Wang,Qifeng Liang,Yuhua Zhen,Yanfeng Guo|(B)|700|%|1.0|We observed unsaturated magnetoresistance (MR) reaching  700% ata magnetic field (B) of 9 T at 2 K along with striking Shubnikov-de Hass (SdH)oscillations.|We observed unsaturated magnetoresistance (MR) reaching  700% ata magnetic field (B) of 9 T at 2 K along with striking Shubnikov-de Hass (SdH)oscillations.
Stochastic Computing for Hardware Implementation of Binarized Neural Networks|Tifenn Hirtzlin,Bogdan Penkovsky,Marc Bocquet,Jacques-Olivier Klein,Jean-Michel Portal,Damien Querlioz|NIS|62|%|1.0|This analysis shows that the stochastic computing approach canallow considerable savings with regards to conventional Binarized Neuralnetworks in terms of area (62% area reduction on the Fashion-M<missing VAR>NIST<missing VAR> task).|This analysis shows that the stochastic computing approach canallow considerable savings with regards to conventional Binarized Neuralnetworks in terms of area (62% area reduction on the Fashion-M<missing VAR>NIST<missing VAR> task).
Stochastic Computing for Hardware Implementation of Binarized Neural Networks|Tifenn Hirtzlin,Bogdan Penkovsky,Marc Bocquet,Jacques-Olivier Klein,Jean-Michel Portal,Damien Querlioz|NIS|1.4|%|1.0|Itcan also allow important savings in terms of energy consumption, if we acceptreasonable reduction of accuracy for example a factor 2.1 can be saved, withthe cost of 1.4% in Fashion-M<missing VAR>NIST<missing VAR> test accuracy.|Itcan also allow important savings in terms of energy consumption, if we acceptreasonable reduction of accuracy for example a factor 2.1 can be saved, withthe cost of 1.4% in Fashion-M<missing VAR>NIST<missing VAR> test accuracy.
Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi|Chang Liu,Dimitrie Culcer,Mark T. Edmonds,Michael S. Fuhrer|Al2O3|80|%|0.25|Here, we study 2DTI few-layer Na3Bi oninsulating Al2O3.|Magnetic field suppresses spin-flip scattering inthe helical edges, resulting in a giant negative magnetoresistance (GNMR), upto 80% at 0.9 T.
Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi|Chang Liu,Dimitrie Culcer,Mark T. Edmonds,Michael S. Fuhrer|Al2O3|98|%|0.16666666666666666|Here, we study 2DTI few-layer Na3Bi oninsulating Al2O3.|Comparison to theory indicates >98% of scattering is helicalspin scattering significantly exceeding the maximum (67%) expected for anon-helical metal.
Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi|Chang Liu,Dimitrie Culcer,Mark T. Edmonds,Michael S. Fuhrer|Al2O3|67|%|0.16666666666666666|Here, we study 2DTI few-layer Na3Bi oninsulating Al2O3.|Comparison to theory indicates >98% of scattering is helicalspin scattering significantly exceeding the maximum (67%) expected for anon-helical metal.
Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa|ZnO|96|%|0.5|We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.|We observe a high magnetoresistance ratio up to 96% at roomtemperature (RT) and find that these MTJs have asymmetric current-voltagecharacteristics, and their rectifying performances are largely dependent on themagnetization alignments of the Fe electrodes.
Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz|NIS|0.1|%|0.3076923076923077|In this work,we show that these bit errors can be tolerated by BNNs to an outstanding level,based on examples of image recognition tasks (M<missing VAR>NIST<missing VAR>, CIFAR<missing VAR>-10 and ImageNet)bit error rates of ST-MRAM<missing VAR> up to 0.1% have little impact on recognitionaccuracy.|In this work,we show that these bit errors can be tolerated by BNNs to an outstanding level,based on examples of image recognition tasks (M<missing VAR>NIST<missing VAR>, CIFAR<missing VAR>-10 and ImageNet)bit error rates of ST-MRAM<missing VAR> up to 0.1% have little impact on recognitionaccuracy.
Large surface conductance and two-dimensional superconductivity in microstructured crystalline topological insulators|Yangmu Li,Jie Wu,Fernando Camino,G. D. Gu,Ivan Božović,John M. Tranquada|Pb1-x|30|%|0.48360655737704916|Here we presentmicrodevices fabricated with focused ion beam from indium-doped topologicalinsulator Pb1-xSnxTe.|With device thickness on the order of 1 mum<missing VAR> and anextremely large bulk resistivity, we achieve an unprecedented enhancement ofthe surface contribution to about 30% of the total conductance near roomtemperature.
Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik|Tl2NiMnO6|70|%|1.0|Hence the ordered Tl2NiMnO6 (70%of Ni2/Mn4 cation ordering) represents the first realization of aferromagnetic insulating double perovskite, showing CMR.|Hence the ordered Tl2NiMnO6 (70%of Ni2/Mn4 cation ordering) represents the first realization of aferromagnetic insulating double perovskite, showing CMR.
Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik|Tl2NiMnO6|31|%|1.0|The study of therelationship between structure and magnetic properties allows us to clarify thenature of spin glass behaviour in the disordered Tl2NiMnO6 (31% ofcation ordering), which is related to the clustering of antisite defects andassociated with the short-range spin correlations.|The study of therelationship between structure and magnetic properties allows us to clarify thenature of spin glass behaviour in the disordered Tl2NiMnO6 (31% ofcation ordering), which is related to the clustering of antisite defects andassociated with the short-range spin correlations.
A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye|CoFeB/MgO|120|%|0.5|We investigated the low temperature performance of CoFeB/MgO basedperpendicular magnetic tunnel junctions (pMTJs) by characterizing theirquasi-static switching voltage, high speed pulse write error rate and endurancedown to 9 K.|pMTJ devices exhibited high magnetoresistance (>120%) and reliable(error rate<10-4) bi-directional switching with 2 to 200 ns voltage pulses.
A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye|CoFeB/MgO|33|%|0.25|Our work demonstrates that CoFeB/MgObased pMTJs have great potential to enable cryogenic MRAM<missing VAR> and that their lowtemperature magnetization and effective magnetic anisotropy can be furtheroptimized to lower operating power and improve endurance.|The critical switching voltage at 9 K wasobserved to increase by 33% to 93%, depending on pulse duration, compared tothat at 350 K.
A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye|CoFeB/MgO|93|%|0.25|Our work demonstrates that CoFeB/MgObased pMTJs have great potential to enable cryogenic MRAM<missing VAR> and that their lowtemperature magnetization and effective magnetic anisotropy can be furtheroptimized to lower operating power and improve endurance.|The critical switching voltage at 9 K wasobserved to increase by 33% to 93%, depending on pulse duration, compared tothat at 350 K.
Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75|Lijun Zhu,Lujun Zhu,Shengjie Shi,D. C. Ralph,R. A. Buhrman|Au0.25Pt0.75|50|%|0.5|The antidamping torque switching of the Au0.25Pt0.75 devices is 10times faster than expected from a rigid macrospin model, most likely because ofthe fast micromagnetics due to the enhanced non-uniformity within the freelayer.|a write energy of < 1 fJ (< 50 fJ) for write error rate of 50% (<1e<missing VAR>-5) for 1 nspulses.
Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs|SO|0.38|%|1.0|, the c<missing VAR>-axis ofD<missing VAR>SO and SIO are parallel to each other with only slightly enlarged d<missing VAR>110out-of-plane lattice spacing (0.38%) due to the small in-plane compressivestrain caused by the D<missing VAR>SO substrate.|, the c<missing VAR>-axis ofD<missing VAR>SO and SIO are parallel to each other with only slightly enlarged d<missing VAR>110out-of-plane lattice spacing (0.38%) due to the small in-plane compressivestrain caused by the D<missing VAR>SO substrate.
Angle-dependent magnetoresistance and its implications for Lifshitz transition in W2As3|Jialu Wang,Haiyang Yang,Linchao Ding,Wei You,Chuanying Xi,Jie Cheng,Zhixiang Shi,Chao Cao,Yongkang Luo,Zengwei Zhu,Jianhui Dai,Mingliang Tian,Yuke Li|W2As3|70000|%|0.25|Here, we report studies of theangle-dependent MR (ADMR) and the thermoelectric effect in W2As3 singlecrystal.|The compound shows a large unsaturated MR (of about 70000% at 4.2 Kand 53 T).
Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans|(F0)|28|%|0.07446808510638298|The results show that the threshold fluence (F0) for AOSis reduced significantly as a function of annealing temperature (T<missing VAR>a) rangingfrom 100C to 300C.|Specifically, a 28% reduction of F0 can be observed uponannealing at 300C, which is a critical T<missing VAR>a for MTJ fabrication.
Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura|CoPt|2000|%|0.7142857142857143|The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.|The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.
Colossal Negative Magnetoresistance Effect in A La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique|Si Wu,Yinghao Zhu,Junchao Xia,Pengfei Zhou,Haiyong Ni,Hai-Feng Li|La1.37Sr1.63Mn2O7|-91.23|%|0.032570422535211266|TheLa1.37Sr1.63Mn2O7 single crystal crystallizes into a tetragonalstructure with space group emphI4/emphmmm at room temperature.|The minimum MR value equals -91.23% at 7T<missing VAR> and 128.7 K.
Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv|CaBe2Ge2|22|%|0.2641509433962264|Furthermore, we compare this new polymorphicintergrowth structure with the alpha-phase BaCu2As2 (ThCr2Si2 type with Z<missing VAR>2)and the b<missing VAR>eta-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types withZ<missing VAR>6), both with the same space group I4/mmm.|Electrical transport studiesreveal p<missing VAR>-type carriers and magnetoresistivity up to 22% at 5 K and under amagnetic field of 7 T.
Physical properties and electronic structure of single-crystal KCo$_2$As$_2$|D. J. Campbell,B. Wilfong,M. P. Zic,G. Levy,M. X. Na,T. M. Pedersen,S. Gorovikov,P. Y. Zavalij,S. Zhdanovich,A. Damascelli,E. E. Rodriguez,J. Paglione|ThCr2Si2|200|%|0.5|Together with Hall effect measurements, angle-resolvedphotoemission experiments reveal a Fermi surface consisting of electron pocketsat the center and corner of the Brillouin zone, in line with theoreticalpredictions and in contrast to the mixed carrier types of other pnictides withthe ThCr2Si2 structure.|A large, linear magnetoresistance of 200% at 14T<missing VAR>,together with an observed linear and hyperbolic, rather than parabolic, banddispersions are unusual characteristics of this metallic compound and mayindicate more complex underlying behavior.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|200|%|0.03365384615384615|Co-rich Co1-xMnx<missing VAR> alloys have hcp or fcc disordered phases and thoseferromagnetic orderings are significantly deteriorated with increasing Mnconcentration x<missing VAR> in bulk.|, high tunnel magnetoresistance (TMR)ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions(MTJs) with the x<missing VAR>  0.25 bcc alloy electrodes [Kunimatsu et al.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|600|%|0.023148148148148147|Co-rich Co1-xMnx<missing VAR> alloys have hcp or fcc disordered phases and thoseferromagnetic orderings are significantly deteriorated with increasing Mnconcentration x<missing VAR> in bulk.|, high tunnel magnetoresistance (TMR)ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions(MTJs) with the x<missing VAR>  0.25 bcc alloy electrodes [Kunimatsu et al.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|620|%|0.022598870056497175|The singlephase bcc Co1-xMnx<missing VAR>(001) films were pseudomorphically grown on Cr(001)for 0.14 < x<missing VAR> < 0.50 with a sputtering technique.|Correspondingly, within the range of 0.25 < x<missing VAR> <0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K)as x<missing VAR> increased.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|229|%|0.018416206261510127|The singlephase bcc Co1-xMnx<missing VAR>(001) films were pseudomorphically grown on Cr(001)for 0.14 < x<missing VAR> < 0.50 with a sputtering technique.|Correspondingly, within the range of 0.25 < x<missing VAR> <0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K)as x<missing VAR> increased.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|450|%|0.0124777183600713|The singlephase bcc Co1-xMnx<missing VAR>(001) films were pseudomorphically grown on Cr(001)for 0.14 < x<missing VAR> < 0.50 with a sputtering technique.|Correspondingly, within the range of 0.25 < x<missing VAR> <0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K)as x<missing VAR> increased.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|194|%|0.008726003490401396|The singlephase bcc Co1-xMnx<missing VAR>(001) films were pseudomorphically grown on Cr(001)for 0.14 < x<missing VAR> < 0.50 with a sputtering technique.|Correspondingly, within the range of 0.25 < x<missing VAR> <0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K)as x<missing VAR> increased.
Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata|Mn100-x/MgO|229|%|0.5|We have investigated the degree of crystallisation in MTJ consisting ofCoxMn100-x/MgO/CoxMn100-x (x<missing VAR>  66, 75, 83 and 86) in relation to their TMRratios.|Cross-sectional high resolution transmission electron microscopy(HRTEM) reveals that almost consistent lattice constants of these layers for 66< x<missing VAR> < 83 with maintaining large TMR ratios of 229% at RT, confirming the softnature of the CoxMn100-x layer with some dislocations at the MgO/Co75Mn25interfaces.
Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata|Mn100-x/MgO|142|%|0.25|We have investigated the degree of crystallisation in MTJ consisting ofCoxMn100-x/MgO/CoxMn100-x (x<missing VAR>  66, 75, 83 and 86) in relation to their TMRratios.|For x<missing VAR>  86, on the other hand, the TMR ratio is found to be reducedto 142% at RT, which is partially attributed to the increased number of thedislocations at the MgO/Co86Mn14 interfaces and amorphous grains identified inthe MgO barrier.
Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath|Ni50Fe50|1|%|0.05952380952380952|Analysis of the T<missing VAR>Hz response based on Boltzmann transport theoryreveals that the AMR of the Ni, Ni81Fe19 and Ni50Fe50 samples is ofpredominantly extrinsic nature.|However, the Co thin film exhibits a sizeableintrinsic AMR contribution, which is constant up to 28 THz and amounts to morethan 2/3 of the D<missing VAR>C AMR contrast of 1%.
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani|Fe/MgO|400|%|1.0|Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions.|Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions.
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani|Fe/MgO|417|%|1.0|Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.|Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani|Fe/MgO|914|%|1.0|Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.|Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani|MgO|80|%|1.0|Clear TMRoscillation as a function of the MgO thickness with a large peak-to-valleydifference of 80% was observed when the layers were grown on a highly(001)-oriented Cr buffer layer.|Clear TMRoscillation as a function of the MgO thickness with a large peak-to-valleydifference of 80% was observed when the layers were grown on a highly(001)-oriented Cr buffer layer.
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani|Fe/MgO/Fe|496|%|0.5|At 3K, fine structures with two dips emerge in the plateau-liked<missing VAR>I/d<missing VAR>V, reflecting highly coherent tunneling through the Fe/MgO/Fe.|We alsoobserved a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at thebottom-Fe/MgO interface.
Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang|VAs2|649|%|1.0|It was found that a large positivemagnetoresistance (MR) reaching 649% at 10 K and 9 T, its nearly quadraticfield dependence, and a field-induced up-turn behavior of rhoxx(T) emergealso in VAs2, although MR is not so large due to the existence of additionalscattering compared with other topological nontrival/trival semimetals.|It was found that a large positivemagnetoresistance (MR) reaching 649% at 10 K and 9 T, its nearly quadraticfield dependence, and a field-induced up-turn behavior of rhoxx(T) emergealso in VAs2, although MR is not so large due to the existence of additionalscattering compared with other topological nontrival/trival semimetals.
Giant anisotropic magnetoresistance with dual-four-fold symmetry in CaMnO3/CaIrO3 heterostructures|Suman Sardar,Megha Vagadia,Tejas Tank Sarmistha Das,Brandon Gunn,Parul Pandey,R. Hübner,Fanny Rodolakis,Gilberto Fabbris,Yongseong Choi,Daniel Haskel,Alex Frano,D. S. Rana|CaMnO3/CaIrO3|70|%|1.0|In this study on CaMnO3/CaIrO3heterostructures, we report a unique dual-four-fold symmetric 70% AMR; a signaltwo orders of magnitude larger than previously observed in similar systems.|In this study on CaMnO3/CaIrO3heterostructures, we report a unique dual-four-fold symmetric 70% AMR; a signaltwo orders of magnitude larger than previously observed in similar systems.
Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions|Kaifei Kang,Shengwei Jiang,Helmuth Berger,Kenji Watanabe,Takashi Taniguchi,László Forró,Jie Shan,Kin Fai Mak|CrBr3|100|%|0.5|Here wereport tunneling spectroscopy under an in-plane magnetic field ofsuperconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that aremade of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3.|Weobserve nearly 100% tunneling anisotropic magnetoresistance (AMR), that is,difference in tunnel resistance upon changing magnetization direction fromout-of-plane to inplane.
Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto|SrRu0.7O3|30|%|0.7142857142857143|Despite the large Ru deficiency (30%), the SrRu0.7O3 films showed metallicconduction when t<missing VAR> > 5 nm.|Despite the large Ru deficiency (30%), the SrRu0.7O3 films showed metallicconduction when t<missing VAR> > 5 nm.
Room-temperature colossal magnetoresistance in terraced single-layer graphene|J. X. Hu,J. Gou,M. Yang,G. J. Omar,J. Y. Tan,S. W. Zeng,Y. P. Liu,K. Han,Z. S. Lim,Z. Huang,A. T. S. Wee,A. Ariando|TiO2|0|%|0.5|Bylaminating single-layer graphene on a terraced substrate, such as TiO2terminated SrTiO3, we demonstrate a universal one order of magnitudeenhancement in the MR compared to conventional single-layer graphene devices.|Here, we report a room-temperaturecolossal MR of up to 5,000% at 9 T in terraced single-layer graphene.
Room-temperature colossal magnetoresistance in terraced single-layer graphene|J. X. Hu,J. Gou,M. Yang,G. J. Omar,J. Y. Tan,S. W. Zeng,Y. P. Liu,K. Han,Z. S. Lim,Z. Huang,A. T. S. Wee,A. Ariando|SrTiO3|0|%|0.5|Bylaminating single-layer graphene on a terraced substrate, such as TiO2terminated SrTiO3, we demonstrate a universal one order of magnitudeenhancement in the MR compared to conventional single-layer graphene devices.|Strikingly, a colossal MR of >1,000% was also achieved in the terraced grapheneeven at a high carrier density of 1012 cm-2.
Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal|RuO2|500|%|1.0|Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.|Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$|Z. L. Sun,A. F. Wang,H. M. Mu,H. H. Wang,Z. F. Wang,T. Wu,Z. Y. Wang,X. Y. Zhou,X. H. Chen|EuMnSb2|6|%|0.34523809523809523|Here, we discover a colossal AMR effect during thefield-induced metal-to-insulator transition (MIT) in a nearly Dirac materialEuMnSb2 with an antiferromagnetic order of Eu2 moments.|The colossalAMR reaches to an unprecedented value of 1.84times106% at 2 K, which isfour orders of magnitude larger than previously reported values inantiferromagnets.
An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand|CPU|6.5|%|0.8571428571428571|Simulationresults exhibit 6.5% and 10% energy savings for CPU-IM<missing VAR>AC based realizations ofLeNet and VGG CNN models, for M<missing VAR>NIST<missing VAR> and CIFAR<missing VAR>-10 pattern recognition tasks,respectively.|Simulationresults exhibit 6.5% and 10% energy savings for CPU-IM<missing VAR>AC based realizations ofLeNet and VGG CNN models, for M<missing VAR>NIST<missing VAR> and CIFAR<missing VAR>-10 pattern recognition tasks,respectively.
An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand|CPU|10|%|1.0|Simulationresults exhibit 6.5% and 10% energy savings for CPU-IM<missing VAR>AC based realizations ofLeNet and VGG CNN models, for M<missing VAR>NIST<missing VAR> and CIFAR<missing VAR>-10 pattern recognition tasks,respectively.|Simulationresults exhibit 6.5% and 10% energy savings for CPU-IM<missing VAR>AC based realizations ofLeNet and VGG CNN models, for M<missing VAR>NIST<missing VAR> and CIFAR<missing VAR>-10 pattern recognition tasks,respectively.
Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava|Cr4PtGa17|140|%|0.5|Ferromagnetic ordering is found below T<missing VAR>C 61 K,by both neutron diffraction and magnetometer studies, with a small, saturatedmoment of 0.25 muB/Cr observed at 2 K, making Cr4PtGa17 the firstferromagnetically ordered material with a breathing pyrochlore lattice.|Amagnetoresistance of 140% was observed at 2 K.
Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani|SHC|1|%|0.9|Hybridization between Co d<missing VAR>-Si p<missing VAR> orbitals andspin-orbit coupling are essential for the SHC, despite the small (1%) weightof Si p<missing VAR>-orbital near the Fermi level.|Hybridization between Co d<missing VAR>-Si p<missing VAR> orbitals andspin-orbit coupling are essential for the SHC, despite the small (1%) weightof Si p<missing VAR>-orbital near the Fermi level.
Negative thermal expansion and itinerant ferromagnetism in Mn$_{1.4}$Fe$_{3.6}$Si$_{3}$|Vikram Singh,R. Nath|Mn1.4Fe3.6Si3|-3|%|0.030054644808743168|We report the thermal expansion, critical behavior, magnetocaloric effect(MCE), and magnetoresistance (MR) on the polycrystallineMn1.4Fe3.6Si3 compound around the ferromagnetic transition.|The large and negative MR (sim -3% in 80 kOe) is also observed at thetransition temperature which can be attributed to the suppression of spindisorder.
Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior|Laxman Raju Thoutam,Tristan K. Truttmann,Anil Kumar Rajapitamahuni,Bharat Jalan|GdScO3|100|%|0.5|Using detailed temperature-, angle- and magnetic field-dependent resistancemeasurements, we illustrate the origin of hysteresis is not due to magnetism inthe film but rather is associated with the magnetocaloric effect of the GdScO3substrate.|Furthermore, MR with the field in-plane yielded a value exceeded 100% at 1.8 K.
Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai|W/CoFeB|0.36|%|1.0|A large unidirectional magnetoresistance (UMR) ratio of UMR/R<missing VAR>xxsim0.36% is found in W/CoFeB metallic bilayer heterostructures at roomtemperature.|A large unidirectional magnetoresistance (UMR) ratio of UMR/R<missing VAR>xxsim0.36% is found in W/CoFeB metallic bilayer heterostructures at roomtemperature.
Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe|Sonali Baral,Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani|SnTe|42|%|1.0|As afunction of applied magnetic field perpendicular to the (100) plane, SnTeexhibits a large unsaturated linear magnetoresistance (LMR) reaching a value of42% at 5K and 8T.|As afunction of applied magnetic field perpendicular to the (100) plane, SnTeexhibits a large unsaturated linear magnetoresistance (LMR) reaching a value of42% at 5K and 8T.
Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang|OPS/W|57.6|%|0.5|9.47-25.4 T<missing VAR>OPS/W is realized with 2-bit input, 1-bitweight and 4-bit output convolution neural network (CNN).|The integral nonlinearity is reduced by 57.6% compared with theconventional structure.
Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic|Mn3Si2Te6|-87|%|1.0|Mn3Si2Te6 exhibits semiconductingbehavior along with a large negative magnetoresistance of -87% at Tc andrelatively high value of thermopower up to sim 10 mV/K at 5 K.|Mn3Si2Te6 exhibits semiconductingbehavior along with a large negative magnetoresistance of -87% at Tc andrelatively high value of thermopower up to sim 10 mV/K at 5 K.
Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu|Sr2IrO4|16.8|%|0.36|The non-doped Sr2IrO4 shows the insulatingtransport with the AMR as big as 16.8% at 50 K.|The non-doped Sr2IrO4 shows the insulatingtransport with the AMR as big as 16.8% at 50 K.
Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu|Sr2IrO4|1|%|0.0794392523364486|The non-doped Sr2IrO4 shows the insulatingtransport with the AMR as big as 16.8% at 50 K.|The Ga substitution of Irallows a gradual reduction of electrical resistivity, and a clearinsulator-to-metal transition is identified in doped samples with x<missing VAR> above 0.05,while the AMR can still have 1%, sizable in comparison with those in AFM<missing VAR>metals reported so far.
Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire|Fe5-xGeTe2|5|%|0.5|In order to tune the magnetic properties of the cleavable high-Curietemperature ferromagnet Fe5-xGeTe2, the effect of increasing theelectron count through arsenic substitution has been investigated.|Smalladditions of arsenic (2.5 and 5%) seemingly enhance ferromagnetic order inpolycrystalline samples by quenching fluctuations on one of the three magneticsublattices, whereas larger As concentrations decrease the ferromagnetic Curietemperature (T<missing VAR>rm C) and saturation magnetization.
Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang|Mn3Sn|300|%|0.375|Usingfirst-principles calculations based on density functional theory, we predict atunneling magnetoresistance (TMR) effect as high as 300% in AFM<missing VAR> tunneljunctions with Mn3Sn electrodes, where the junction resistance depends on therelative orientation of their Neel vectors and exhibits four non-volatileresistance states.|Usingfirst-principles calculations based on density functional theory, we predict atunneling magnetoresistance (TMR) effect as high as 300% in AFM<missing VAR> tunneljunctions with Mn3Sn electrodes, where the junction resistance depends on therelative orientation of their Neel vectors and exhibits four non-volatileresistance states.
Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka|In1-x|0|%|0.75|In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.|In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.
Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka|In1-x|5|%|0.8333333333333334|In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.|In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.
Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka|In1-x|7.5|%|0.875|In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.|In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.
Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka|In1-x|10|%|0.30434782608695654|In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.|In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.
Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan|La0.5Sr0.5Fe12O19|117|%|0.25|Therecoverable energy density of the antiferroelectric La0.5Sr0.5Fe12O19 phasereaches 14.3 J/cm3.|A 1.1T magnetic field generateselectronic polarization up to 0.95uC/cm2, reduce the resistance by 117%,enhances dielectric constants by 540% and right shifts the maximum dielectricloss peak by 208 kHz.
Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan|La0.5Sr0.5Fe12O19|540|%|0.25|Therecoverable energy density of the antiferroelectric La0.5Sr0.5Fe12O19 phasereaches 14.3 J/cm3.|A 1.1T magnetic field generateselectronic polarization up to 0.95uC/cm2, reduce the resistance by 117%,enhances dielectric constants by 540% and right shifts the maximum dielectricloss peak by 208 kHz.
Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav|Bi2Te3|1500|%|0.3870967741935484|We have observed unusually high values of magnetoresistance (sim1500%) and mobility (sim 93000 cm2V-1s<missing VAR>-1) at low temperaturesfor pristine Bi2Te3 that decrease on Pd doping.|We have observed unusually high values of magnetoresistance (sim1500%) and mobility (sim 93000 cm2V-1s<missing VAR>-1) at low temperaturesfor pristine Bi2Te3 that decrease on Pd doping.
Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang|HfGe0.92Te|8|%|0.13043478260869565|HfGe0.92Te crystalizes in a nonsymmorphic tetragonal space group P4/nmm (No.|129), having square Ge-atom plane with vacancies about 8%.
Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran|B/Co|2|%|0.044642857142857144|M<missing VAR>(H) at 10 K does not saturate at the maximum availablefield and has a much smaller value (0.87 muB/Co in a field of 50 kOe) than1.9 muB/Co expected for spin-only contribution from intermediate Co3 andCo4 spins.|The resistivity shows insulating behavior down to 10 K and only asmall magnetoresistance ( 2% for H  70 kOe) occurs around T<missing VAR>C.
Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu|Mg3Bi2|940|%|0.4583333333333333|This is a two-orders-of-magnitude increase with respect to the normalMg-deficiency Mg3Bi2 sample.|By compensating Mg loss in the Mg-richconditions for turning carrier concentration, the sample obtained in this workshows a large linear non-saturating magnetoresistance of 940% under a field of14 Tesla.
Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance|Shen Zhang,Yibo Wang,Qingqi Zeng,Jianlei Shen,Xinqi Zheng,Jinying Yang,Zhaosheng Wang,Chuanying Xi,Binbin Wang,Min Zhou,Rongjin Huang,Hongxiang Wei,Yuan Yao,Shouguo Wang,Stuart S. P. Parkin,Claudia Felser,Enke Liu,Baogen Shen|CoS2|500|%|1.0|Here, we report a quantitative scaling modelthat correlates the LPMR with the Berry curvature, based on a ferromagneticWeyl semimetal CoS2 that bears the largest LPMR of over 500% at 2 Kelvin and 9Tesla, among known magnetic topological semimetals.|Here, we report a quantitative scaling modelthat correlates the LPMR with the Berry curvature, based on a ferromagneticWeyl semimetal CoS2 that bears the largest LPMR of over 500% at 2 Kelvin and 9Tesla, among known magnetic topological semimetals.
Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana|Bi0.85Sb0.15|4250|%|0.054104477611940295|Detailed high field (up to12T) and low temperature (down to 2K) magneto-transport measurements are beencarried out on the studied Bi0.85Sb0.15 single crystal.|The obtained crystal shows non-saturatingmagnetoresistance (4250%) at 2K and 12T, along with the existence of weak-antilocalization (WAL) effect at around zero magnetic field.
Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel|CoSi|610|%|0.024509803921568627|Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (d<missing VAR>HvA)quantum oscillations studies are reported on a high-quality CoSi single crystalgrown by the Czochralski method.|Magnetoresistance (MR) at 2 Kreaches 610% for I[111] and B[01-1], whereas it is 500% for I[01-1] andB[111].
Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel|CoSi|500|%|0.016233766233766232|Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (d<missing VAR>HvA)quantum oscillations studies are reported on a high-quality CoSi single crystalgrown by the Czochralski method.|Magnetoresistance (MR) at 2 Kreaches 610% for I[111] and B[01-1], whereas it is 500% for I[01-1] andB[111].
Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak|CaAuAs|50|%|0.16666666666666666|Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs.|The effect of 50% Cu doping at the Au site in the topological Diracsemimetal CaAuAs is investigated through electronic band structurecalculations, electrical resistivity, and magnetotransport measurements.
Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure|W. Xie,F. Du,X. Y. Zheng,H. Su,Z. Y. Nie,B. Q. Liu,Y. H. Xia,T. Shang,C. Cao,M. Smidman,T. Takabatake,H. Q. Yuan|YbPdAs|33|%|0.04054054054054054|Magnetic, transport, and thermodynamic measurements indicate that YbPdAs is alow-carrier Kondo lattice compound with an antiferromagnetic transition atT<missing VAR>mathrmN  6.6 K, which is slightly suppressed in applied magnetic fieldsup to 9 T.|The magnetic entropy at T<missing VAR>mathrmN recovers only 33% ofR<missing VAR>ln2, the full entropy of the ground state doublet of the Yb-ions.
Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura|SrTiO3|500|%|0.08888888888888889|Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.|Our analysis combining thefirst-principles calculation and the Landauer formula shows that the Co-basedMTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value(290%).
Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura|SrTiO3|290|%|0.47368421052631576|Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.|Our analysis combining thefirst-principles calculation and the Landauer formula shows that the Co-basedMTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value(290%).
Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh|RbV3Sb5|56|%|0.18354430379746836|For the quantumoscillation frequencies with sufficient signal-to-noise ratio, we furtherperform field-angle dependent measurements and our data indicatetwo-dimensional Fermi surfaces in RbV3Sb5.|Inparticular, a large quantum oscillation frequency (2235 T), which occupiessim56% of the Brillouin zone area, has been recorded.
Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo|Cr2Ge2Te6|300|%|0.16964285714285715|In theMTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find thereare eight stable magnetic states, leading to six distinguishable electronicresistances.|As a result, five sizable TMRs larger than 300% can be obtained(the maximum TMR is up to 620,000%).
Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo|Cr2Ge2Te6|0|%|0.27710843373493976|In theMTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find thereare eight stable magnetic states, leading to six distinguishable electronicresistances.|As a result, five sizable TMRs larger than 300% can be obtained(the maximum TMR is up to 620,000%).
Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang|Fe3GaTe2/MoS2/Fe3GaTe2|15.89|%|0.8947368421052632|TheMagnetoresistance (MR) of the all- devices is up to 15.89% at 2.3 K and 11.97%at 10 K, 4-30 times of MR from the spin valves ofFe3GaTe2/MoS2/Fe3GaTe2 and conventional NiFe/MoS2/NiFe.|TheMagnetoresistance (MR) of the all- devices is up to 15.89% at 2.3 K and 11.97%at 10 K, 4-30 times of MR from the spin valves ofFe3GaTe2/MoS2/Fe3GaTe2 and conventional NiFe/MoS2/NiFe.
Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang|Fe3GaTe2/MoS2/Fe3GaTe2|11.97|%|1.0|TheMagnetoresistance (MR) of the all- devices is up to 15.89% at 2.3 K and 11.97%at 10 K, 4-30 times of MR from the spin valves ofFe3GaTe2/MoS2/Fe3GaTe2 and conventional NiFe/MoS2/NiFe.|TheMagnetoresistance (MR) of the all- devices is up to 15.89% at 2.3 K and 11.97%at 10 K, 4-30 times of MR from the spin valves ofFe3GaTe2/MoS2/Fe3GaTe2 and conventional NiFe/MoS2/NiFe.
Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang|MoS2|0.31|%|0.29310344827586204|Typical spin valve effect shows strong dependence on MoS2 spacer thickness inthe vdW heterojunction.|Importantly, the spin valve effect (0.31%) stillrobustly exists at 300 K with low working currents down to 10 nA (0.13A/cm2).
FeRhCrSi: A new spin semimetal with room temperature spin-valve behavior|Y. Venkateswara,Jadupati Nag,S. Shanmukharao Samatham,Akhilesh Kumar Patel,P. D. Babu,Manoj Raama Varma,Jayita Nayak,K. G. Suresh,Aftab Alam|FeRhCrSi|50|%|0.1|Here, we presentexperimental verification of spin semimetallic behavior in FeRhCrSi, aquaternary Heusler alloy with saturation moment 2 muB and Curie temperature> 400 K.|It crystallises in the L<missing VAR>21 structure with 50% antisitedisorder between Fe and Rh.
Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2|Hongwei Fang,Meng Lyu,Hao Su,Jian Yuan,Yiwei Li,Lixuan Xu,Shuai Liu,Liyang Wei,Xinqi Liu,Haifeng Yang,Qi Yao,Meixiao Wang,Yanfeng Guo,Wujun Shi,Yulin Chen,Enke Liu,Zhongkai Liu|Ni3In2S2|15518|%|0.1640625|The transportmeasurements reveal Ni3In2S2 as a compensated semimetal with record-highcarrier mobility (8683 cm2 V-1 S-1 and 7356 cm2 V-1 S-1 for holes andelectrons) and extreme magnetoresistance (15518% at 2 K and 13 T) amongkagome-lattice materials.|The transportmeasurements reveal Ni3In2S2 as a compensated semimetal with record-highcarrier mobility (8683 cm2 V-1 S-1 and 7356 cm2 V-1 S-1 for holes andelectrons) and extreme magnetoresistance (15518% at 2 K and 13 T) amongkagome-lattice materials.
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti|Fe2CrTe/MgO/Fe2CrTe|1000|%|0.5|Transmission profile ofthe Fe2CrTe/MgO/Fe2CrTe heterojunction has been calculated to probe it asa magnetic tunneling junction (MTJ) material in both the cubic and tetragonalphases.|Considerably large tunneling magnetoresistance ratio (TMR) of 1000% isobserved for the tetragonal phase, which is found to be one order of magnitudelarger than that of the cubic phase.
Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski|CeRhSb|-10|%|0.30303030303030304|It follows from our analysis of CeRhSb that the formation of Kondo insulatorstate due to the presence of the collective spin singlet state is stronglyreduced by its doping with various dopants when their amount exceeds 8--10%,regardless of whether they are substituted for Ce, Rh or Sb.|It follows from our analysis of CeRhSb that the formation of Kondo insulatorstate due to the presence of the collective spin singlet state is stronglyreduced by its doping with various dopants when their amount exceeds 8--10%,regardless of whether they are substituted for Ce, Rh or Sb.
Spin-valve nature and giant coercivity of a ferrimagnetic spin semimetal Mn$_2$IrGa|Akhilesh Kumar Patel,Y. Venkateswara,S. Shanmukharao Samatham,Archana Lakhani,Jayita Nayak,K. G. Suresh,Aftab Alam|Mn2IrGa|1|%|1.0|Magnetoresistance (MR) confirms anirreversible nature (with its magnitude sim1%) along with a change of signacross the magnetic transition indicating the potentiality of Mn2IrGa inmagnetic switching applications.|Magnetoresistance (MR) confirms anirreversible nature (with its magnitude sim1%) along with a change of signacross the magnetic transition indicating the potentiality of Mn2IrGa inmagnetic switching applications.
Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film|Wan-Shun Du,Weipeng Chen,Yangbo Zhou,Tengfei Zhou,Guangjian Liu,Zongteng Zhang,Zichuan Miao,Hao Jia,Song Liu,Yue Zhao,Zhensheng Zhang,Tingyong Chen,Ning Wang,Wen Huang,Zhen-Bing Tan,Jing-Jing Chen,Da-Peng Yu|SI1|20|%|1.0|We report nonreciprocal superconducting critical currents witha diode efficiency close to 20%, and an extreme magnetochiral anisotropycoefficient up to SI1e<missing VAR>9perteslaperampere, under weak out-of-planemagnetic field in the millitesla range.|We report nonreciprocal superconducting critical currents witha diode efficiency close to 20%, and an extreme magnetochiral anisotropycoefficient up to SI1e<missing VAR>9perteslaperampere, under weak out-of-planemagnetic field in the millitesla range.
Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu|CrI3|4|%|0.5|We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.|, TMR (TER) up to sim3.36times104%(sim6.68times103%) at a specific bias voltage.
Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu|CrI3|3|%|0.5|We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.|, TMR (TER) up to sim3.36times104%(sim6.68times103%) at a specific bias voltage.
Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu|Tb/Co|74|%|0.0594059405940594|Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions.|Thenanofabricated magnetic tunnel junction devices have an optimized bottomreference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to74% after patterning down to sub-100nm lateral dimensions.
Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik|La0.7Sr0.3Mn0.8Ti0.2O3|70|%|1.0|The maximum MR effect is about 70% for La0.7Sr0.3Mn0.8Ti0.2O3.|The maximum MR effect is about 70% for La0.7Sr0.3Mn0.8Ti0.2O3.
Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson|Ni/NiO/Ni|10|%|0.20270270270270271|Toconfirm the magnetic switching characteristics and spin injection efficiency ofthe Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Nimagnetic tunnel junction with asymmetric dimensions of the electrodes similarto those of the SE<missing VAR>Ts.|Magnetoresistance measurements on the test deviceexhibited clear signs of magnetic reversal and a maximum TMR of 10%, from whichwe deduced a spin-polarization of about 22% in the Ni electrodes.
Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson|Ni/NiO/Ni|22|%|0.03608247422680412|Toconfirm the magnetic switching characteristics and spin injection efficiency ofthe Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Nimagnetic tunnel junction with asymmetric dimensions of the electrodes similarto those of the SE<missing VAR>Ts.|Magnetoresistance measurements on the test deviceexhibited clear signs of magnetic reversal and a maximum TMR of 10%, from whichwe deduced a spin-polarization of about 22% in the Ni electrodes.
Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal|YBCO|72000|%|0.38636363636363635|Galvanomagneticstudies on the LSMO-YBCO-LSMO trilayers reveal unusually high AMR(sim72000%) on rotating the field in the plane of the heterostructure whosemagnetic ground state is antiferromagnetic (AF).|Galvanomagneticstudies on the LSMO-YBCO-LSMO trilayers reveal unusually high AMR(sim72000%) on rotating the field in the plane of the heterostructure whosemagnetic ground state is antiferromagnetic (AF).
AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain|La0.65Ca0.35Mn1-x|-5|%|0.0019230769230769232|The effect of Fe substitution on Mn sites in the colossal magnetoresistivecompounds La0.65Ca0.35Mn1-xFexO3 with 0.01<x<missing VAR><0.1 have been studied.|The variations in the critical temperatureTc and magnetic moment show a rapid change at about 4-5% Fe.
AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain|La0.65Ca0.35Mn1-x|4|%|0.0031034482758620693|The effect of Fe substitution on Mn sites in the colossal magnetoresistivecompounds La0.65Ca0.35Mn1-xFexO3 with 0.01<x<missing VAR><0.1 have been studied.|The x<missing VAR> peakmoves to 8 or 10 K higher temperature on the application of a dc field, for 3 4% samples.
Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami|Co/MgO/S|1|%|0.5|Spin injectionwas performed using either transparent contacts (Co/SLG) or tunneling contacts(Co/MgO/SLG).|With tunneling contacts, the nonlocal MR was increased by afactor of 1000 and the spin injection/detection efficiency was greatlyenhanced from 1% (transparent contacts) to 30%.
Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami|Co/MgO/S|30|%|0.5|Spin injectionwas performed using either transparent contacts (Co/SLG) or tunneling contacts(Co/MgO/SLG).|With tunneling contacts, the nonlocal MR was increased by afactor of 1000 and the spin injection/detection efficiency was greatlyenhanced from 1% (transparent contacts) to 30%.
Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi|Co/Cu|-20|%|0.07758620689655173|The giant magnetoresistance (GMR) and structure was investigated forelectrodeposited Co/Cu multilayers prepared by a conventionalgalvanostatic/potentiostatic pulse combination from a pure sulfate electrolytewith various layer thicknesses, total multilayer thickness and Cu depositionpotential.|The bilayer repeats derived from thepositions of the visible superlattice reflections were typically 10-20% higherthan the nominal values.
Kondo effect and absence of quantum interference effects in the charge transport of cobalt doped iron pyrite|S. Guo,D. P. Young,R. T. Macaluso,D. A. Browne,N. L. Henderson,J. Y. Chan,L. L. Henry,J. F. DiTusa|Fe1-xCo|30|%|0.05|The Hall effect and resistivity of the carrier doped magnetic semiconductorFe1-xCox<missing VAR>S2 were measured for 0le x<missing VAR> le 0.16, temperatures between0.05 and 300 K, and fields of up to 9 T.|Our Hall data indicate electron chargecarriers with a density of only 10 to 30% of the Co density of our crystals.
Kondo effect and absence of quantum interference effects in the charge transport of cobalt doped iron pyrite|S. Guo,D. P. Young,R. T. Macaluso,D. A. Browne,N. L. Henderson,J. Y. Chan,L. L. Henry,J. F. DiTusa|Fe1-xCo|35|%|0.04083885209713024|The Hall effect and resistivity of the carrier doped magnetic semiconductorFe1-xCox<missing VAR>S2 were measured for 0le x<missing VAR> le 0.16, temperatures between0.05 and 300 K, and fields of up to 9 T.|For x>xc, the resistivity and magnetoresistance resemble thatof a spin glass with a reduction of the resistivity by as much as 35% in 5 Tfields.
Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm|CoTi1-xFe|-18.5|%|0.16666666666666666|Evidence of superparamagnetism for x<missing VAR>0.3and x<missing VAR>0.2 suggests for moderate levels of Fe, demixing of theCoTi1-xFex<missing VAR>Sb films into Fe rich and Fe deficient regions may bepresent.|Anomalous Hall effect andlarge negative magnetoresistance (up to -18.5% at 100 kOe for x<missing VAR>0.3) areobserved for higher Fe content films.
Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat|Cd2As2|-10|%|0.04918032786885246|In this work wetest this prediction by synthesizing a series of Eu1-xBax<missing VAR>Cd2As2single crystals and studying their structural, magnetic and transportproperties via both experimental techniques and first-principles calculations.|We find that small concentrations of Ba (sim 3-10% ) lead to a smallout-of-plane canting of the Eu moment.
Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi|PC|0.22|%|0.953125|In thenormal metallic phase above P>PCD<missing VAR>W1, we observed a single frequency ofsim 48 T<missing VAR> with a cyclotron effective mass of 0.066 m<missing VAR>0, whose cross sectionin the reciprocal space corresponded to only 0.22% of the first Brillouinzone.|In thenormal metallic phase above P>PCD<missing VAR>W1, we observed a single frequency ofsim 48 T<missing VAR> with a cyclotron effective mass of 0.066 m<missing VAR>0, whose cross sectionin the reciprocal space corresponded to only 0.22% of the first Brillouinzone.
High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea|BN/Ni|1200|%|0.5|However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.|A TMR ratio as high as 1200% was observed at an energy of0.34 e<missing VAR>V, which is higher than the Fermi energy.
Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani|ISH|90|%|0.2714285714285714|Our estimation of theself-induced ISHE<missing VAR> for the sample with 54 nOmega.|m<missing VAR> AHR<missing VAR> shows that it maycontribute significantly (approx 90%) to the measured symmetric voltage.
KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston|KCo2As2|40|%|0.10294117647058823|The magnetic susceptibility chi of KCo2As2is isotropic and about an order of magnitude smaller than the values for therelated compounds SrCo2As2 and BaCo2As2.|The material also exhibits a nearly linearmagnetoresistance at low T<missing VAR> which attains a value of about 40% at T<missing VAR>2K andmagnetic field H 80 k<missing VAR>Oe.
KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston|KCo2As2|36|%|0.024193548387096774|Our results show that KCo2As2provides a new avenue for investigating the physics of high-purity metals.|Heat capacity Crm p(T) data at low T<missing VAR> yield an electronicdensity of states N(E<missing VAR>rm F) that is about 36% larger than predicted by thefirst-principles theory.
Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev|LaWN3|28|%|0.5652173913043478|Wedemonstrate a photoresponse in LaWN3 the resistivity of a La-rich sample isenhanced by 28% at low temperature, likely due to a defect trapping mechanism.|Wedemonstrate a photoresponse in LaWN3 the resistivity of a La-rich sample isenhanced by 28% at low temperature, likely due to a defect trapping mechanism.
