W
###Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX2N4(X = Si, Ge)|Chayan Das,Dibyajyoti Saikia,Atanu Betal,Satyajit Sahu###
(570, 570)
Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX<missing VAR>2N4(X<missing VAR>  Si, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, 'D', 1],[79.0, 0.91, 'at', 2],[80.0, 400, 'K', 2],[110.0, 0.56, 'for', 2]

N4
###Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX2N4(X = Si, Ge)|Chayan Das,Dibyajyoti Saikia,Atanu Betal,Satyajit Sahu###
(573, 574)
Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX<missing VAR>2N4(X<missing VAR>  Si, Ge).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2, 'D', 1],[75.0, 0.91, 'at', 2],[76.0, 400, 'K', 2],[106.0, 0.56, 'for', 2]

Si
###Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX2N4(X = Si, Ge)|Chayan Das,Dibyajyoti Saikia,Atanu Betal,Satyajit Sahu###
(579, 579)
Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX<missing VAR>2N4(X<missing VAR>  Si, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2, 'D', 1],[70.0, 0.91, 'at', 2],[71.0, 400, 'K', 2],[101.0, 0.56, 'for', 2]

Ge
###Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX2N4(X = Si, Ge)|Chayan Das,Dibyajyoti Saikia,Atanu Betal,Satyajit Sahu###
(582, 582)
Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX<missing VAR>2N4(X<missing VAR>  Si, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'D', 1],[67.0, 0.91, 'at', 2],[68.0, 400, 'K', 2],[98.0, 0.56, 'for', 2]

W
###Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX2N4(X = Si, Ge)|Chayan Das,Dibyajyoti Saikia,Atanu Betal,Satyajit Sahu###
(605, 605)
 We investigated the thermoelectric properties of the 2D monolayer of WX<missing VAR>2N4using Density Functional Theory combined with Boltzmann Transport Equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'D', 0],[44.0, 0.91, 'at', 1],[45.0, 400, 'K', 1],[75.0, 0.56, 'for', 1]

N4
###Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX2N4(X = Si, Ge)|Chayan Das,Dibyajyoti Saikia,Atanu Betal,Satyajit Sahu###
(608, 609)
 We investigated the thermoelectric properties of the 2D monolayer of WX<missing VAR>2N4using Density Functional Theory combined with Boltzmann Transport Equation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'D', 0],[40.0, 0.91, 'at', 1],[41.0, 400, 'K', 1],[71.0, 0.56, 'for', 1]

WGe2N4
###Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX2N4(X = Si, Ge)|Chayan Das,Dibyajyoti Saikia,Atanu Betal,Satyajit Sahu###
(659, 663)
 Weobtained an outstanding thermoelectric figure of merit of 0.91 at 400K forp<missing VAR>-type WGe2N4, whether it showed a ZT value of 0.56 for n<missing VAR>-type at the sametemperature.
Featurization terminated normally.
0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 2, 'D', 1],[10.0, 0.91, 'at', 0],[9.0, 400, 'K', 0],[17.0, 0.56, 'for', 0]

WSi2N4
###Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX2N4(X = Si, Ge)|Chayan Das,Dibyajyoti Saikia,Atanu Betal,Satyajit Sahu###
(707, 711)
 On the other hand, the WSi2N4 showed significantly low ZT at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2, 'D', 2],[58.0, 0.91, 'at', 1],[57.0, 400, 'K', 1],[27.0, 0.56, 'for', 1]

InAs/GaSb
###Driving Perpendicular Heat Flow: Ambipolar Transverse Thermoelectrics for Microscale and Cryogenic Peltier Cooling|Chuanle Zhou,S. Birner,Yang Tang,K. Heinselman,M. Grayson###
(1198, 1202)
 InAs/GaSb type IIsuperlattices are shown to have the appropriate band structure for use as atransverse thermoelectric.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

II
###Driving Perpendicular Heat Flow: Ambipolar Transverse Thermoelectrics for Microscale and Cryogenic Peltier Cooling|Chuanle Zhou,S. Birner,Yang Tang,K. Heinselman,M. Grayson###
(1206, 1207)
 InAs/GaSb type IIsuperlattices are shown to have the appropriate band structure for use as atransverse thermoelectric.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Effect of Sb deficiency on the thermoelectric properties of Zn4Sb3|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(1254, 1254)
Effect of Sb deficiency on the thermoelectric properties of Zn4Sb3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn4Sb3
###Effect of Sb deficiency on the thermoelectric properties of Zn4Sb3|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(1268, 1271)
Effect of Sb deficiency on the thermoelectric properties of Zn4Sb3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Effect of Sb deficiency on the thermoelectric properties of Zn4Sb3|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(1286, 1286)
 We have investigated the effect of Sb-deficiency on the thermoelectric figureof merit (zT) of Zn4Sb3 prepared by solid state reaction route.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn4Sb3
###Effect of Sb deficiency on the thermoelectric properties of Zn4Sb3|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(1310, 1313)
 We have investigated the effect of Sb-deficiency on the thermoelectric figureof merit (zT) of Zn4Sb3 prepared by solid state reaction route.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Effect of Sb deficiency on the thermoelectric properties of Zn4Sb3|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(1328, 1328)
 At hightemperatures, the Seebeck coefficient (S) and electrical conductivity(sigma) increase with increase in Sb deficiency whereas the thermalconductivity (k<missing VAR>appa) decreases giving rise to an increase in the overall zTvalue.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(S)
###Effect of Sb deficiency on the thermoelectric properties of Zn4Sb3|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(1342, 1344)
 At hightemperatures, the Seebeck coefficient (S) and electrical conductivity(sigma) increase with increase in Sb deficiency whereas the thermalconductivity (k<missing VAR>appa) decreases giving rise to an increase in the overall zTvalue.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Effect of Sb deficiency on the thermoelectric properties of Zn4Sb3|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(1365, 1365)
 At hightemperatures, the Seebeck coefficient (S) and electrical conductivity(sigma) increase with increase in Sb deficiency whereas the thermalconductivity (k<missing VAR>appa) decreases giving rise to an increase in the overall zTvalue.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn4Sb3
###Effect of Sb deficiency on the thermoelectric properties of Zn4Sb3|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(1445, 1448)
 The observations suggest that creation of vacancies could be aneffective route in improving the thermoelectric properties of Zn4Sb3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsCu2I3
###Metal halide thermoelectrics: prediction of high-performance CsCu2I3|Jong Woong Park,Young-Kwang Jung,Aron Walsh###
(1523, 1527)
Metal halide thermoelectrics prediction of high-performance CsCu2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 2.2, 'at', 5],[224.0, 600, 'K', 5]

CsCu2I3
###Metal halide thermoelectrics: prediction of high-performance CsCu2I3|Jong Woong Park,Young-Kwang Jung,Aron Walsh###
(1703, 1707)
 Using a first-principles procedurewe assess the thermoelectric potential of copper halide CsCu2I3, which features1D<missing VAR> Cu-I connectivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2.2, 'at', 1],[44.0, 600, 'K', 1]

Cu
###Metal halide thermoelectrics: prediction of high-performance CsCu2I3|Jong Woong Park,Young-Kwang Jung,Aron Walsh###
(1718, 1718)
 Using a first-principles procedurewe assess the thermoelectric potential of copper halide CsCu2I3, which features1D<missing VAR> Cu-I connectivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2.2, 'at', 1],[33.0, 600, 'K', 1]

I
###Metal halide thermoelectrics: prediction of high-performance CsCu2I3|Jong Woong Park,Young-Kwang Jung,Aron Walsh###
(1720, 1720)
 Using a first-principles procedurewe assess the thermoelectric potential of copper halide CsCu2I3, which features1D<missing VAR> Cu-I connectivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 2.2, 'at', 1],[31.0, 600, 'K', 1]

B
###Fluctuation-Dissipation in Thermoelectrics|Ngoc Anh Minh Tran,Aditya Savitha Dutt,Nithin Bharadwaj Pulumati,Heiko Reith,Anjun Hu,Alexandre Dumont,Kornelius Nielsch,André-Marie Tremblay,Gabi Schierning,Bertrand Reulet,Thomas Szkopek###
(1924, 1924)
 TheJohnson-Nyquist noise formula  4 kB T R  for spectral density of voltagefluctuations accounts for fluctuations associated solely with Ohmicdissipation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 4, 'k', 0],[270.0, 295, 'K', 4]

B
###Fluctuation-Dissipation in Thermoelectrics|Ngoc Anh Minh Tran,Aditya Savitha Dutt,Nithin Bharadwaj Pulumati,Heiko Reith,Anjun Hu,Alexandre Dumont,Kornelius Nielsch,André-Marie Tremblay,Gabi Schierning,Bertrand Reulet,Thomas Szkopek###
(2009, 2009)
 Applying the fluctuation-dissipation theorem, we generalize theJohnson-Nyquist formula for thermoelectrics, finding an enhanced voltagefluctuation spectral density 4 k<missing VAR>B T R (1 + ZT) at frequencies below athermal cut-off frequency fT, where ZT is the dimensionless thermoelectricmaterial figure of merit.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 4, 'k', 1],[185.0, 295, 'K', 3]

K
###Fluctuation-Dissipation in Thermoelectrics|Ngoc Anh Minh Tran,Aditya Savitha Dutt,Nithin Bharadwaj Pulumati,Heiko Reith,Anjun Hu,Alexandre Dumont,Kornelius Nielsch,André-Marie Tremblay,Gabi Schierning,Bertrand Reulet,Thomas Szkopek###
(2176, 2176)
 Measuring the ZT enhanced voltage noise, weexperimentally resolve temperature fluctuations with an amplitude of 0.8mumathrmK mathrmHz-1/2 at a mean temperature of 295 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 4, 'k', 4],[18.0, 295, 'K', 0]

BCNN
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2298, 2301)
 The thermoelectric properties of hybrid graphene-boron nitride nanoribbons(BCNNRs) are investigated using the non-equilibrium Greens<missing VAR> function (NEGF)approach.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 3, 'p', 2]

N
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2323, 2323)
 The thermoelectric properties of hybrid graphene-boron nitride nanoribbons(BCNNRs) are investigated using the non-equilibrium Greens<missing VAR> function (NEGF)approach.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 3, 'p', 2]

F
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2326, 2326)
 The thermoelectric properties of hybrid graphene-boron nitride nanoribbons(BCNNRs) are investigated using the non-equilibrium Greens<missing VAR> function (NEGF)approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3, 'p', 2]

BN
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2371, 2372)
 We find that the thermoelectric figure of merit (ZT) can beremarkably enhanced by periodically embedding hexagonal BN (h<missing VAR>-BN) into graphenenanoribbons (G<missing VAR>NRs).
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 3, 'p', 1]

N
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2378, 2378)
 We find that the thermoelectric figure of merit (ZT) can beremarkably enhanced by periodically embedding hexagonal BN (h<missing VAR>-BN) into graphenenanoribbons (G<missing VAR>NRs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 3, 'p', 1]

N
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2390, 2390)
 We find that the thermoelectric figure of merit (ZT) can beremarkably enhanced by periodically embedding hexagonal BN (h<missing VAR>-BN) into graphenenanoribbons (G<missing VAR>NRs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 3, 'p', 1]

N
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2402, 2402)
 Compared to pristine G<missing VAR>NRs, the ZT for armchair-edged BCNNRswith width index 3p+2 is enhanced up to 1020 times while the ZT of nanoribbonswith other widths is enhanced just by 1.53 times.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 3, 'p', 0]

BCNN
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2417, 2420)
 Compared to pristine G<missing VAR>NRs, the ZT for armchair-edged BCNNRswith width index 3p+2 is enhanced up to 1020 times while the ZT of nanoribbonswith other widths is enhanced just by 1.53 times.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 3, 'p', 0]

As
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2478, 2478)
 As for zigzag-edgenanoribbons, the ZT is enhanced up to 23 times.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 3, 'p', 1]

In
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2562, 2562)
 Inaddition, the effect of component ratio of h<missing VAR>-BN on the thermoelectric transportproperties is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 3, 'p', 3]

BN
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2582, 2583)
 Inaddition, the effect of component ratio of h<missing VAR>-BN on the thermoelectric transportproperties is discussed.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 3, 'p', 3]

BCNN
###Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons|Kaike Yang,Yuanping Chen,Roberto D'Agosta,Yuee Xie,Jianxin Zhong,Angel Rubio###
(2607, 2610)
 These results qualify BCNNRs as a promising candidatefor building outstanding thermoelectric devices.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 3, 'p', 4]

TiNiSn
###Enhanced thermoelectric performance in TiNiSn-based half-Heuslers|R. A. Downie,D. A. MacLaren,R. I. Smith,J. W. G. Bos###
(2649, 2651)
Enhanced thermoelectric performance in TiNiSn-based half-Heuslers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.5, ',', 1]

TiNiSn
###Enhanced thermoelectric performance in TiNiSn-based half-Heuslers|R. A. Downie,D. A. MacLaren,R. I. Smith,J. W. G. Bos###
(2690, 2692)
 Thermoelectric figures of merit, ZT > 0.5, have been obtained in arc-meltedTiNiSn-based ingots.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.5, ',', 0]

B
###Optimal band gap for improved thermoelectric performance of two-dimensional Dirac materials|Eddwi H. Hasdeo,Lukas P. A. Krisna,Muhammad Y. Hanna,Bobby E. Gunara,Nguyen T. Hung,Ahmad. R. T. Nugraha###
(2925, 2925)
 The optimal band gap ranges from 6kBT to 18kBT, where k<missing VAR>B is theBoltzmann constant and T<missing VAR> is the operating temperature in kelvin.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, 'D', 2],[28.0, 2, 'D', 1],[9.0, 6, 'kBT', 0],[6.0, 18, 'kBT', 0],[77.0, 2, 'D', 1],[165.0, 2, 'D', 3]

In
###Optimal band gap for improved thermoelectric performance of two-dimensional Dirac materials|Eddwi H. Hasdeo,Lukas P. A. Krisna,Muhammad Y. Hanna,Bobby E. Gunara,Nguyen T. Hung,Ahmad. R. T. Nugraha###
(3037, 3037)
 In the most ideal case where the lattice thermal conductivity iszero (leaving the electron thermal conductivity alone), the maximum ZT in thegapped 2D Dirac material is many times ZT of commercial thermoelectricmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 2, 'D', 5],[140.0, 2, 'D', 4],[121.0, 6, 'kBT', 3],[118.0, 18, 'kBT', 3],[35.0, 2, 'D', 2],[53.0, 2, 'D', 0]

Mg3.225Mn0.025Sb1.5Bi0.49Te0.01
###Porosity-mediated High-performance Thermoelectric Materials|Xiaoxi Chen,Siyi Chang,Jin Chen,Pengfei Nan,Hao Wang,Shan Li,Xiyang Li,Xu Chen,Qiulin Liu,Xiaoshan Zhu,Binghui Ge,Wei Cai,Jiehe Sui,Shuqi Zheng,Fangwei Wang,Xiaolong Chen,Huaizhou Zhao###
(3196, 3205)
 Herein we report that thermoelectric performance can besignificantly enhanced by creating porosity in n<missing VAR>-typeMg3.225Mn0.025Sb1.5Bi0.49Te0.01, with a ZT of 0.9 at 323 K and 1.6 at 723 K,making the average ZT much higher for better performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0.004761904761904762,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.0019047619047619048,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 323, 'K', 0],[22.0, 723, 'K', 0]

Bi2Te3
###Porosity-mediated High-performance Thermoelectric Materials|Xiaoxi Chen,Siyi Chang,Jin Chen,Pengfei Nan,Hao Wang,Shan Li,Xiyang Li,Xu Chen,Qiulin Liu,Xiaoshan Zhu,Binghui Ge,Wei Cai,Jiehe Sui,Shuqi Zheng,Fangwei Wang,Xiaolong Chen,Huaizhou Zhao###
(3307, 3310)
 The large improvementat room temperature is significant considering that such a ZT value iscomparable to the best ZT at this temperature in n<missing VAR>-type Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 323, 'K', 1],[80.0, 723, 'K', 1]

Nb0.56V0.24Ti0.2FeSb
###Porosity-mediated High-performance Thermoelectric Materials|Xiaoxi Chen,Siyi Chang,Jin Chen,Pengfei Nan,Hao Wang,Shan Li,Xiyang Li,Xu Chen,Qiulin Liu,Xiaoshan Zhu,Binghui Ge,Wei Cai,Jiehe Sui,Shuqi Zheng,Fangwei Wang,Xiaolong Chen,Huaizhou Zhao###
(3397, 3404)
 We further extend this approach to other thermoelectricmaterials such as half-Heuslers Nb0.56V0.24Ti0.2FeSb andHf0.25Zr0.75NiSn0.99Sb0.01 and Bi0.5Sb1.5Te3 showing similar improvements,further advancing thermoelectric materials for applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0.08,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18666666666666668,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 323, 'K', 3],[170.0, 723, 'K', 3]

Hf0.25Zr0.75NiSn0.99Sb0.01
###Porosity-mediated High-performance Thermoelectric Materials|Xiaoxi Chen,Siyi Chang,Jin Chen,Pengfei Nan,Hao Wang,Shan Li,Xiyang Li,Xu Chen,Qiulin Liu,Xiaoshan Zhu,Binghui Ge,Wei Cai,Jiehe Sui,Shuqi Zheng,Fangwei Wang,Xiaolong Chen,Huaizhou Zhao###
(3409, 3417)
 We further extend this approach to other thermoelectricmaterials such as half-Heuslers Nb0.56V0.24Ti0.2FeSb andHf0.25Zr0.75NiSn0.99Sb0.01 and Bi0.5Sb1.5Te3 showing similar improvements,further advancing thermoelectric materials for applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.33,0.0033333333333333335,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 323, 'K', 3],[182.0, 723, 'K', 3]

Bi0.5Sb1.5Te3
###Porosity-mediated High-performance Thermoelectric Materials|Xiaoxi Chen,Siyi Chang,Jin Chen,Pengfei Nan,Hao Wang,Shan Li,Xiyang Li,Xu Chen,Qiulin Liu,Xiaoshan Zhu,Binghui Ge,Wei Cai,Jiehe Sui,Shuqi Zheng,Fangwei Wang,Xiaolong Chen,Huaizhou Zhao###
(3421, 3426)
 We further extend this approach to other thermoelectricmaterials such as half-Heuslers Nb0.56V0.24Ti0.2FeSb andHf0.25Zr0.75NiSn0.99Sb0.01 and Bi0.5Sb1.5Te3 showing similar improvements,further advancing thermoelectric materials for applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 323, 'K', 3],[194.0, 723, 'K', 3]

In
###Limitations of zT as a Figure of Merit for Nanostructured Thermoelectric Materials|Xufeng Wang,Mark Lundstrom###
(3552, 3552)
 In accordance with previous theory and experimental results, wefind that the Seebeck coefficient, power factor and figure of merit, zT, can beincreased by nanostructuring when energy barriers exist around the grainboundaries or embedded nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(3918, 3918)
Bismuth-antimony (Bi-Sb) alloy is a promising material for thermoelectriccooling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.6, 'at', 1],[103.0, 50, 'percents', 2],[123.0, 0.4, ',', 2],[155.0, 150, 'K', 2],[270.0, 100, 'K', 4]

Sb
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(3920, 3920)
Bismuth-antimony (Bi-Sb) alloy is a promising material for thermoelectriccooling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.6, 'at', 1],[101.0, 50, 'percents', 2],[121.0, 0.4, ',', 2],[153.0, 150, 'K', 2],[268.0, 100, 'K', 4]

K
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(3971, 3971)
 Herein, a high figure of merit, ZT, near 0.6 at cryogenic temperatures(100-150K) has been achieved in melt-spun n<missing VAR>-type Bi85Sb15 bulk samplesconsisting of micron-size grains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.6, 'at', 0],[50.0, 50, 'percents', 1],[70.0, 0.4, ',', 1],[102.0, 150, 'K', 1],[217.0, 100, 'K', 3]

Bi85Sb15
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(3990, 3993)
 Herein, a high figure of merit, ZT, near 0.6 at cryogenic temperatures(100-150K) has been achieved in melt-spun n<missing VAR>-type Bi85Sb15 bulk samplesconsisting of micron-size grains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.85,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0.6, 'at', 0],[28.0, 50, 'percents', 1],[48.0, 0.4, ',', 1],[80.0, 150, 'K', 1],[195.0, 100, 'K', 3]

Bi
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(4077, 4077)
 The achieved ZT is nearly 50 percents higherthan polycrystalline averaged single crystal ZT of 0.4, and it is alsosignificantly higher than ZT of less than 0.3 measured below 150K in Bi-Tealloys commonly used for cryogenic cooling applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.6, 'at', 1],[56.0, 50, 'percents', 0],[36.0, 0.4, ',', 0],[4.0, 150, 'K', 0],[111.0, 100, 'K', 2]

Te
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(4079, 4079)
 The achieved ZT is nearly 50 percents higherthan polycrystalline averaged single crystal ZT of 0.4, and it is alsosignificantly higher than ZT of less than 0.3 measured below 150K in Bi-Tealloys commonly used for cryogenic cooling applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 0.6, 'at', 1],[58.0, 50, 'percents', 0],[38.0, 0.4, ',', 0],[6.0, 150, 'K', 0],[109.0, 100, 'K', 2]

W
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(4177, 4177)
 A record lowthermal conductivity of 1.5 W m<missing VAR>-1 K-1 near 100 K was measured using the hotdisk method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 0.6, 'at', 3],[156.0, 50, 'percents', 2],[136.0, 0.4, ',', 2],[104.0, 150, 'K', 2],[11.0, 100, 'K', 0]

K
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(4183, 4183)
 A record lowthermal conductivity of 1.5 W m<missing VAR>-1 K-1 near 100 K was measured using the hotdisk method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 0.6, 'at', 3],[162.0, 50, 'percents', 2],[142.0, 0.4, ',', 2],[110.0, 150, 'K', 2],[5.0, 100, 'K', 0]

Bi
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(4276, 4276)
 The study revealed a gradual narrowing of the band gap atincreasing temperature in Bi-Sb alloy for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 0.6, 'at', 5],[255.0, 50, 'percents', 4],[235.0, 0.4, ',', 4],[203.0, 150, 'K', 4],[88.0, 100, 'K', 2]

Sb
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(4278, 4278)
 The study revealed a gradual narrowing of the band gap atincreasing temperature in Bi-Sb alloy for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 0.6, 'at', 5],[257.0, 50, 'percents', 4],[237.0, 0.4, ',', 4],[205.0, 150, 'K', 4],[90.0, 100, 'K', 2]

Bi
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(4302, 4302)
Magneto-thermoelectric effects of this Bi-Sb alloy further improved the TEproperties, leading to ZT of about 0.7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 0.6, 'at', 6],[281.0, 50, 'percents', 5],[261.0, 0.4, ',', 5],[229.0, 150, 'K', 5],[114.0, 100, 'K', 3]

Sb
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(4304, 4304)
Magneto-thermoelectric effects of this Bi-Sb alloy further improved the TEproperties, leading to ZT of about 0.7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 0.6, 'at', 6],[283.0, 50, 'percents', 5],[263.0, 0.4, ',', 5],[231.0, 150, 'K', 5],[116.0, 100, 'K', 3]

NdFeB/BiSb/NdFeB
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(4357, 4366)
 The magneto-TE effect was furtherdemonstrated in a combined NdFeB/BiSb/NdFeB system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[397.0, 0.6, 'at', 7],[336.0, 50, 'percents', 6],[316.0, 0.4, ',', 6],[284.0, 150, 'K', 6],[169.0, 100, 'K', 4]

BiSb
###Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures|Sheng Gao,John Gaskins,Xixiao Hu,Kathleen Tomko,Patrick Hopkins,S. Joseph Poon###
(4380, 4381)
 The compactness of theBiSb-magnet system with high ZT enables the utilization of magneto-TE effect inthermoelectric cooling applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[420.0, 0.6, 'at', 8],[359.0, 50, 'percents', 7],[339.0, 0.4, ',', 7],[307.0, 150, 'K', 7],[192.0, 100, 'K', 5]

In
###Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators|Yong Xu,Zhongxue Gan,Shou-Cheng Zhang###
(4512, 4512)
 In this work, we demonstratetheoretically that zT is strongly size dependent in T<missing VAR>I, and the size parametercan be tuned to enhance zT to be significantly greater than 1. Furthermore, weshow that the life time of the edge states in T<missing VAR>I is strongly energy dependent,leading to large and anomalous Seebeck effects with an opposite sign to theHall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1.0, 'Furthermore', 0]

I
###Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators|Yong Xu,Zhongxue Gan,Shou-Cheng Zhang###
(4542, 4542)
 In this work, we demonstratetheoretically that zT is strongly size dependent in T<missing VAR>I, and the size parametercan be tuned to enhance zT to be significantly greater than 1. Furthermore, weshow that the life time of the edge states in T<missing VAR>I is strongly energy dependent,leading to large and anomalous Seebeck effects with an opposite sign to theHall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1.0, 'Furthermore', 0]

I
###Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators|Yong Xu,Zhongxue Gan,Shou-Cheng Zhang###
(4603, 4603)
 In this work, we demonstratetheoretically that zT is strongly size dependent in T<missing VAR>I, and the size parametercan be tuned to enhance zT to be significantly greater than 1. Furthermore, weshow that the life time of the edge states in T<missing VAR>I is strongly energy dependent,leading to large and anomalous Seebeck effects with an opposite sign to theHall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 1.0, 'Furthermore', 0]

SrTiO3
###Thermoelectric properties of $n$-type SrTiO3|Jifeng Sun,David J. Singh###
(4694, 4697)
Thermoelectric properties of n<missing VAR>-type SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.7, 'at', 4],[184.0, 1400, 'K', 4]

SrTiO3
###Thermoelectric properties of $n$-type SrTiO3|Jifeng Sun,David J. Singh###
(4723, 4726)
 We present an investigation of the thermoelectric properties of cubicperovskite SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.7, 'at', 3],[155.0, 1400, 'K', 3]

La
###Thermoelectric properties of $n$-type SrTiO3|Jifeng Sun,David J. Singh###
(4796, 4796)
 The results are derived from a combination of calculatedtransport functions obtained from Boltzmann transport theory in the constantscattering time approximation based on the electronic structure and existingexperimental data for La-doped SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.7, 'at', 2],[85.0, 1400, 'K', 2]

SrTiO3
###Thermoelectric properties of $n$-type SrTiO3|Jifeng Sun,David J. Singh###
(4800, 4803)
 The results are derived from a combination of calculatedtransport functions obtained from Boltzmann transport theory in the constantscattering time approximation based on the electronic structure and existingexperimental data for La-doped SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.7, 'at', 2],[78.0, 1400, 'K', 2]

BiSb
###Enhancement in the Figure of Merit of p-type BiSb alloys through multiple valence-band doping|Hyungyu Jin,Christopher M. Jaworski,Joseph P. Heremans###
(4941, 4942)
Enhancement in the Figure of Merit of p<missing VAR>-type BiSb alloys through multiple valence-band doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 200, 'K', 1],[173.0, 400, 'K', 3],[184.0, 12, '<', 3],[223.0, 60, '%', 4]

N
###Enhancement in the Figure of Merit of p-type BiSb alloys through multiple valence-band doping|Hyungyu Jin,Christopher M. Jaworski,Joseph P. Heremans###
(4957, 4957)
 N-type Bi100-xSbx alloys have the highest thermoelectric figure of merit (zT)of all materials below 200K; here we investigate how filling multiple valenceband pockets at T<missing VAR> and H-points of the Brillouin zone produces high zT in p<missing VAR>-typeSn-doped material.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 200, 'K', 0],[158.0, 400, 'K', 2],[169.0, 12, '<', 2],[208.0, 60, '%', 3]

Bi100-x
###Enhancement in the Figure of Merit of p-type BiSb alloys through multiple valence-band doping|Hyungyu Jin,Christopher M. Jaworski,Joseph P. Heremans###
(4961, 4964)
 N-type Bi100-xSbx alloys have the highest thermoelectric figure of merit (zT)of all materials below 200K; here we investigate how filling multiple valenceband pockets at T<missing VAR> and H-points of the Brillouin zone produces high zT in p<missing VAR>-typeSn-doped material.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[32.0, 200, 'K', 0],[151.0, 400, 'K', 2],[162.0, 12, '<', 2],[201.0, 60, '%', 3]

H
###Enhancement in the Figure of Merit of p-type BiSb alloys through multiple valence-band doping|Hyungyu Jin,Christopher M. Jaworski,Joseph P. Heremans###
(5024, 5024)
 N-type Bi100-xSbx alloys have the highest thermoelectric figure of merit (zT)of all materials below 200K; here we investigate how filling multiple valenceband pockets at T<missing VAR> and H-points of the Brillouin zone produces high zT in p<missing VAR>-typeSn-doped material.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 200, 'K', 0],[91.0, 400, 'K', 2],[102.0, 12, '<', 2],[141.0, 60, '%', 3]

Sn
###Enhancement in the Figure of Merit of p-type BiSb alloys through multiple valence-band doping|Hyungyu Jin,Christopher M. Jaworski,Joseph P. Heremans###
(5050, 5050)
 N-type Bi100-xSbx alloys have the highest thermoelectric figure of merit (zT)of all materials below 200K; here we investigate how filling multiple valenceband pockets at T<missing VAR> and H-points of the Brillouin zone produces high zT in p<missing VAR>-typeSn-doped material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 200, 'K', 0],[65.0, 400, 'K', 2],[76.0, 12, '<', 2],[115.0, 60, '%', 3]

Bi
###Enhancement in the Figure of Merit of p-type BiSb alloys through multiple valence-band doping|Hyungyu Jin,Christopher M. Jaworski,Joseph P. Heremans###
(5080, 5080)
 This approach, theoretically predicted to potentially givezT>1 in Bi, was used successfully in PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 200, 'K', 1],[35.0, 400, 'K', 1],[46.0, 12, '<', 1],[85.0, 60, '%', 2]

PbTe
###Enhancement in the Figure of Merit of p-type BiSb alloys through multiple valence-band doping|Hyungyu Jin,Christopher M. Jaworski,Joseph P. Heremans###
(5091, 5092)
 This approach, theoretically predicted to potentially givezT>1 in Bi, was used successfully in PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 200, 'K', 1],[23.0, 400, 'K', 1],[34.0, 12, '<', 1],[73.0, 60, '%', 2]

Sb
###Enhancement in the Figure of Merit of p-type BiSb alloys through multiple valence-band doping|Hyungyu Jin,Christopher M. Jaworski,Joseph P. Heremans###
(5147, 5147)
 We report thermopower, electricaland thermal conductivity (2 to 400K) of single crystals with 12<x<missing VAR><37 andpolycrystals (x<missing VAR>50-90), higher Sb concentrations than previous studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 200, 'K', 2],[32.0, 400, 'K', 0],[21.0, 12, '<', 0],[18.0, 60, '%', 1]

S
###Gate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires|Ning-Xuan Yang,Yan-Feng Zhou,Peng Lv,Qing-Feng Sun###
(5253, 5253)
 The Seebeck coefficients Sc<missing VAR> andthe dimensionless thermoelectrical figure of merit ZT are obtained by usingthe tight-binding Hamiltonian combining with the nonequilibrium Greens<missing VAR>function method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Gate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires|Ning-Xuan Yang,Yan-Feng Zhou,Peng Lv,Qing-Feng Sun###
(5364, 5364)
 By changing the gate voltage ormagnetic fields, the values of Sc<missing VAR> and ZT can be easily controlled.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Gate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires|Ning-Xuan Yang,Yan-Feng Zhou,Peng Lv,Qing-Feng Sun###
(5381, 5381)
 At thezero magnetic fields and zero gate voltage, or at the large perpendicularmagnetic field and nonzero gate voltage, ZT has the large value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Gate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires|Ning-Xuan Yang,Yan-Feng Zhou,Peng Lv,Qing-Feng Sun###
(5451, 5451)
 Owing to theelectron-hole symmetry, Sc<missing VAR> is an odd function of the Fermi energy while ZTis an even function regardless of the magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Gate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires|Ning-Xuan Yang,Yan-Feng Zhou,Peng Lv,Qing-Feng Sun###
(5495, 5495)
 Sc<missing VAR> and ZT showpeaks when the quantized transmission coefficient jumps from one plateau toanother.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Gate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires|Ning-Xuan Yang,Yan-Feng Zhou,Peng Lv,Qing-Feng Sun###
(5560, 5560)
 At the zero perpendicular magnetic field and zero gate voltage, theheight of n<missing VAR>th peak of SC is frackBetextttln2/(n+1/2) andfrackBetextttln2/n<missing VAR> for the longitudinal magnetic fluxphiparallel  0  and pi, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Gate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires|Ning-Xuan Yang,Yan-Feng Zhou,Peng Lv,Qing-Feng Sun###
(5595, 5596)
 At the zero perpendicular magnetic field and zero gate voltage, theheight of n<missing VAR>th peak of SC is frackBetextttln2/(n+1/2) andfrackBetextttln2/n<missing VAR> for the longitudinal magnetic fluxphiparallel  0  and pi, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Gate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires|Ning-Xuan Yang,Yan-Feng Zhou,Peng Lv,Qing-Feng Sun###
(5679, 5679)
 Finally, we also study theeffect of disorder and find that Sc<missing VAR> and ZT are robust against disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Gate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires|Ning-Xuan Yang,Yan-Feng Zhou,Peng Lv,Qing-Feng Sun###
(5696, 5696)
 Inparticular, the large value of ZT can survive even if at the strong disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Counterintuitive example on relation between ZT and thermoelectric efficiency|Byungki Ryu,Jaywan Chung,Eun-Ae Choi,Pawel Ziolkowski,Eckhard Müller,SuDong Park###
(6061, 6061)
 In thispaper, we report a counterintuitive situation by comparing two materialsalthough one material has a higher ZT value over the whole operationaltemperature range, its maximum conversion efficiency is smaller than that ofthe other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Thermoelectricity in Nanowires: A Generic Model|Shadyar Farhangfar###
(6352, 6355)
 Still, the estimated ZT forthe representative Bi2Te3 nanowires and its dependence on wire parametersdeviate considerably from those predicted by the existing RTA models with aconstant tau.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermoelectricity in Nanowires: A Generic Model|Shadyar Farhangfar###
(6404, 6404)
 In addition, we address contribution of the higher energysubbands to the transport phenomena, the effect of chemical potential tuning onZT, and correlation of ZT with quantum size effects (Q<missing VAR>SEs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Es
###Thermoelectricity in Nanowires: A Generic Model|Shadyar Farhangfar###
(6474, 6474)
 In addition, we address contribution of the higher energysubbands to the transport phenomena, the effect of chemical potential tuning onZT, and correlation of ZT with quantum size effects (Q<missing VAR>SEs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0
Abstract does not contain any numbers.

S2
###Prediction of high zT in thermoelectric silicon nanowires with axial germanium heterostructures|Matthew Shelley,Arash A. Mostofi###
(6585, 6586)
 We calculate the thermoelectric figure of merit,zTS2GT/(kappal+kappae), for p<missing VAR>-type Si nanowires with axial Geheterostructures using a combination of first-principles density-functionaltheory, interatomic potentials, and Landauer-Buttiker transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 8400, 'atoms', 1],[164.0, 111, '>', 3],[199.0, 3, ',', 3]

Si
###Prediction of high zT in thermoelectric silicon nanowires with axial germanium heterostructures|Matthew Shelley,Arash A. Mostofi###
(6605, 6605)
 We calculate the thermoelectric figure of merit,zTS2GT/(kappal+kappae), for p<missing VAR>-type Si nanowires with axial Geheterostructures using a combination of first-principles density-functionaltheory, interatomic potentials, and Landauer-Buttiker transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 8400, 'atoms', 1],[145.0, 111, '>', 3],[180.0, 3, ',', 3]

Ge
###Prediction of high zT in thermoelectric silicon nanowires with axial germanium heterostructures|Matthew Shelley,Arash A. Mostofi###
(6613, 6613)
 We calculate the thermoelectric figure of merit,zTS2GT/(kappal+kappae), for p<missing VAR>-type Si nanowires with axial Geheterostructures using a combination of first-principles density-functionaltheory, interatomic potentials, and Landauer-Buttiker transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 8400, 'atoms', 1],[137.0, 111, '>', 3],[172.0, 3, ',', 3]

Ge
###Prediction of high zT in thermoelectric silicon nanowires with axial germanium heterostructures|Matthew Shelley,Arash A. Mostofi###
(6672, 6672)
 Weconsider nanowires with up to 8400 atoms and twelve Ge axial heterostructuresalong their length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 8400, 'atoms', 0],[78.0, 111, '>', 2],[113.0, 3, ',', 2]

S2
###Prediction of high zT in thermoelectric silicon nanowires with axial germanium heterostructures|Matthew Shelley,Arash A. Mostofi###
(6701, 6702)
 We find that introducing heterostructures always reducesS2G<missing VAR>, and that our calculated increases in zT are predominantly driven byassociated decreases in kappal<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 8400, 'atoms', 1],[48.0, 111, '>', 1],[83.0, 3, ',', 1]

Ge
###Prediction of high zT in thermoelectric silicon nanowires with axial germanium heterostructures|Matthew Shelley,Arash A. Mostofi###
(6766, 6766)
 Of the systems considered, <111> nanowireswith a regular distribution of Ge heterostructures have the highestfigure-of-merit zT3, an order of magnitude larger than the equivalentpristine nanowire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 8400, 'atoms', 2],[16.0, 111, '>', 0],[19.0, 3, ',', 0]

Ds
###New record of high ZT found in hybrid transition-metal-dichalcogenides|Yulou Ouyang,Yuee Xie,Zhongwei Zhang,Qing Peng,Yuanping Chen###
(7095, 7095)
 Here, we investigate the thermoelectrictransport properties of hybrid armchair-edged TMDs nanoribbons, by using thenonequilibrium Greens<missing VAR> function technique combined with the first principlesand molecular dynamics methods.
EXCEPTION 3: IndexError for Ds
MoS2/MoSe2
[55.0, 7.4, 'in', 1],[71.0, 800, 'K', 1]

HO
###Thermoelectric efficiency of single-molecule junctions with long molecular linkers|Natalya A. Zimbovskaya###
(7465, 7466)
 It isshown that thermoelectric figure of merit ZT strongly depends on the bridgelength, being controlled by the lineshape of electron transmission functionwithin the tunnel energy range corresponding to HOM<missing VAR>O/LUMO transport channel.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Thermoelectric efficiency of single-molecule junctions with long molecular linkers|Natalya A. Zimbovskaya###
(7468, 7468)
 It isshown that thermoelectric figure of merit ZT strongly depends on the bridgelength, being controlled by the lineshape of electron transmission functionwithin the tunnel energy range corresponding to HOM<missing VAR>O/LUMO transport channel.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Thermoelectric efficiency of single-molecule junctions with long molecular linkers|Natalya A. Zimbovskaya###
(7473, 7473)
 It isshown that thermoelectric figure of merit ZT strongly depends on the bridgelength, being controlled by the lineshape of electron transmission functionwithin the tunnel energy range corresponding to HOM<missing VAR>O/LUMO transport channel.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Nanograined half-Heusler semiconductors as advanced thermoelectrics: an ab-initio high-throughput statistical study|Jesús Carrete,Natalio Mingo,Shidong Wang,Stefano Curtarolo###
(7826, 7826)
 Here we perform ab-initio modeling of ZT for 75 nanograinedcompounds obtained by filtering down the 79,057 half-Heusler entries availablein the AFL<missing VAR>OWL<missing VAR>IB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 75, 'nanograined', 0],[18.0, 79, ',', 0],[73.0, 15, '%', 3]

OW
###Nanograined half-Heusler semiconductors as advanced thermoelectrics: an ab-initio high-throughput statistical study|Jesús Carrete,Natalio Mingo,Shidong Wang,Stefano Curtarolo###
(7828, 7829)
 Here we perform ab-initio modeling of ZT for 75 nanograinedcompounds obtained by filtering down the 79,057 half-Heusler entries availablein the AFL<missing VAR>OWL<missing VAR>IB.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 75, 'nanograined', 0],[20.0, 79, ',', 0],[70.0, 15, '%', 3]

IB
###Nanograined half-Heusler semiconductors as advanced thermoelectrics: an ab-initio high-throughput statistical study|Jesús Carrete,Natalio Mingo,Shidong Wang,Stefano Curtarolo###
(7831, 7832)
 Here we perform ab-initio modeling of ZT for 75 nanograinedcompounds obtained by filtering down the 79,057 half-Heusler entries availablein the AFL<missing VAR>OWL<missing VAR>IB.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 75, 'nanograined', 0],[23.0, 79, ',', 0],[67.0, 15, '%', 3]

IV
###Nanograined half-Heusler semiconductors as advanced thermoelectrics: an ab-initio high-throughput statistical study|Jesús Carrete,Natalio Mingo,Shidong Wang,Stefano Curtarolo###
(7883, 7884)
 For many of the compounds the ZTs are markedly above thoseattainable with nanograined IV and III-V semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 75, 'nanograined', 2],[75.0, 79, ',', 2],[15.0, 15, '%', 1]

III
###Nanograined half-Heusler semiconductors as advanced thermoelectrics: an ab-initio high-throughput statistical study|Jesús Carrete,Natalio Mingo,Shidong Wang,Stefano Curtarolo###
(7888, 7890)
 For many of the compounds the ZTs are markedly above thoseattainable with nanograined IV and III-V semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 75, 'nanograined', 2],[80.0, 79, ',', 2],[9.0, 15, '%', 1]

V
###Nanograined half-Heusler semiconductors as advanced thermoelectrics: an ab-initio high-throughput statistical study|Jesús Carrete,Natalio Mingo,Shidong Wang,Stefano Curtarolo###
(7892, 7892)
 For many of the compounds the ZTs are markedly above thoseattainable with nanograined IV and III-V semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 75, 'nanograined', 2],[84.0, 79, ',', 2],[7.0, 15, '%', 1]

Bi2Te3/Sb2Te3
###Enhanced thermoelectric properties of coaxial Bi2Te3/Sb2Te3 nanostructures studied by theoretical modeling|Qilin Gu###
(8283, 8291)
Enhanced thermoelectric properties of coaxial Bi2Te3/Sb2Te3 nanostructures studied by theoretical modeling.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Bi2Te3/Sb2Te3
###Enhanced thermoelectric properties of coaxial Bi2Te3/Sb2Te3 nanostructures studied by theoretical modeling|Qilin Gu###
(8347, 8355)
 Critical thermoelectric parameters including Seebeck coefficient, electricalconductivity, thermal conductivity and figure of merit ZT of one-dimensionalcoaxial Bi2Te3/Sb2Te3 nanocomposite were modeled by following the singlecarrier pocket and sharp interface assumptions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Enhanced thermoelectric properties of coaxial Bi2Te3/Sb2Te3 nanostructures studied by theoretical modeling|Qilin Gu###
(8416, 8416)
 A calculation scheme based onLandauer approach, instead of commonly used Boltzmann transport equation (BTE)with relaxation time approximation, was adopted to numerically obtain thetransmission functions which can be used to evaluate thermoelectric properties.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8564, 8564)
Homogenous Inx<missing VAR>Ga1-xN alloys on ZnO substrates A new approach for high performance thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.86, ',', 3],[333.0, 300, 'K', 6]

Ga1-xN
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8566, 8570)
Homogenous Inx<missing VAR>Ga1-xN alloys on ZnO substrates A new approach for high performance thermoelectric materials.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[154.0, 0.86, ',', 3],[327.0, 300, 'K', 6]

ZnO
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8576, 8577)
Homogenous Inx<missing VAR>Ga1-xN alloys on ZnO substrates A new approach for high performance thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.86, ',', 3],[320.0, 300, 'K', 6]

In
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8626, 8626)
 In this study, we have producedhigh-quality homogeneous In0.32Ga0.68N on ZnO substrates, with no phaseseparation at high Indium content, using metal organic chemical vapordeposition for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 0.86, ',', 1],[271.0, 300, 'K', 4]

In0.32Ga0.68N
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8646, 8650)
 In this study, we have producedhigh-quality homogeneous In0.32Ga0.68N on ZnO substrates, with no phaseseparation at high Indium content, using metal organic chemical vapordeposition for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.34,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.86, ',', 1],[247.0, 300, 'K', 4]

ZnO
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8654, 8655)
 In this study, we have producedhigh-quality homogeneous In0.32Ga0.68N on ZnO substrates, with no phaseseparation at high Indium content, using metal organic chemical vapordeposition for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 0.86, ',', 1],[242.0, 300, 'K', 4]

SiGe
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8744, 8745)
 A record high room temperaturefigure of merit zT is obtained of 0.86, which is five times larger than that ofSiGe, the current state of the art high temperature thermoelectric material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.86, ',', 0],[152.0, 300, 'K', 3]

W
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8890, 8890)
 Themaximum power factor reached was 77.98x<missing VAR>10-4 W/m<missing VAR>K2 at 300K forIn0.32Ga0.68N alloys at a carrier concentration 6.25x<missing VAR>1020cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 0.86, ',', 3],[7.0, 300, 'K', 0]

K2
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8893, 8894)
 Themaximum power factor reached was 77.98x<missing VAR>10-4 W/m<missing VAR>K2 at 300K forIn0.32Ga0.68N alloys at a carrier concentration 6.25x<missing VAR>1020cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 0.86, ',', 3],[3.0, 300, 'K', 0]

In0.32Ga0.68N
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8902, 8906)
 Themaximum power factor reached was 77.98x<missing VAR>10-4 W/m<missing VAR>K2 at 300K forIn0.32Ga0.68N alloys at a carrier concentration 6.25x<missing VAR>1020cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.34,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 0.86, ',', 3],[5.0, 300, 'K', 0]

In
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8937, 8937)
 This work indicates that Inx<missing VAR>Ga1-xN alloys have greatpotential for thermoelectric applications especially at a high temperaturerange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0.86, ',', 4],[40.0, 300, 'K', 1]

Ga1-xN
###Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials|Yining Feng,Evan Witkoske,Bahadir Kucukgok,Yee Rui Koh,Ali Shakouri,Ian T. Ferguson,Na Lu###
(8939, 8943)
 This work indicates that Inx<missing VAR>Ga1-xN alloys have greatpotential for thermoelectric applications especially at a high temperaturerange.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[215.0, 0.86, ',', 4],[42.0, 300, 'K', 1]

Ag2Te
###Synergistic approach towards reproducible high zT in superionic thermoelectric Ag2Te|Navita Jakhar,Nita Bisht,Ankita Katre,Surjeet Singh###
(9001, 9003)
Synergistic approach towards reproducible high zT in superionic thermoelectric Ag2Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 100, '%', 6],[348.0, 1.2, 'at', 6],[474.0, 87, '%', 9]

K
###Synergistic approach towards reproducible high zT in superionic thermoelectric Ag2Te|Navita Jakhar,Nita Bisht,Ankita Katre,Surjeet Singh###
(9111, 9111)
,near 1000K in the Cu2X<missing VAR> (X<missing VAR> chalcogen atom) family where the superionictransition is close to 400K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 100, '%', 3],[240.0, 1.2, 'at', 3],[366.0, 87, '%', 6]

Cu2
###Synergistic approach towards reproducible high zT in superionic thermoelectric Ag2Te|Navita Jakhar,Nita Bisht,Ankita Katre,Surjeet Singh###
(9117, 9118)
,near 1000K in the Cu2X<missing VAR> (X<missing VAR> chalcogen atom) family where the superionictransition is close to 400K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 100, '%', 3],[233.0, 1.2, 'at', 3],[359.0, 87, '%', 6]

K
###Synergistic approach towards reproducible high zT in superionic thermoelectric Ag2Te|Navita Jakhar,Nita Bisht,Ankita Katre,Surjeet Singh###
(9147, 9147)
,near 1000K in the Cu2X<missing VAR> (X<missing VAR> chalcogen atom) family where the superionictransition is close to 400K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 100, '%', 3],[204.0, 1.2, 'at', 3],[330.0, 87, '%', 6]

At
###Synergistic approach towards reproducible high zT in superionic thermoelectric Ag2Te|Navita Jakhar,Nita Bisht,Ankita Katre,Surjeet Singh###
(9150, 9150)
 At such high temperatures, the liquid-like flowof the metal ions under an electric field or a temperature gradient, both ofwhich are integral to the working of a thermoelectric device, results in devicedegradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 100, '%', 2],[201.0, 1.2, 'at', 2],[327.0, 87, '%', 5]

Ag2Te
###Synergistic approach towards reproducible high zT in superionic thermoelectric Ag2Te|Navita Jakhar,Nita Bisht,Ankita Katre,Surjeet Singh###
(9326, 9328)
 Here, we present a novelall-room-temperature route to fabricate 100% dense, nanostructured Ag2Tewith highly reproducible thermoelectric properties and a high zT of 1.2 at570K, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 100, '%', 0],[23.0, 1.2, 'at', 0],[149.0, 87, '%', 3]

K
###Synergistic approach towards reproducible high zT in superionic thermoelectric Ag2Te|Navita Jakhar,Nita Bisht,Ankita Katre,Surjeet Singh###
(9355, 9355)
 Here, we present a novelall-room-temperature route to fabricate 100% dense, nanostructured Ag2Tewith highly reproducible thermoelectric properties and a high zT of 1.2 at570K, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 100, '%', 0],[4.0, 1.2, 'at', 0],[122.0, 87, '%', 3]

K
###Synergistic approach towards reproducible high zT in superionic thermoelectric Ag2Te|Navita Jakhar,Nita Bisht,Ankita Katre,Surjeet Singh###
(9367, 9367)
, merely 150K above its superionic transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 100, '%', 1],[16.0, 1.2, 'at', 1],[110.0, 87, '%', 2]

Ag2Te
###Synergistic approach towards reproducible high zT in superionic thermoelectric Ag2Te|Navita Jakhar,Nita Bisht,Ankita Katre,Surjeet Singh###
(9439, 9441)
 Thishierarchical nanostructuring is shown to suppress the thermal conductivity ofAg2Te beyond the phonon-liquid electron-crystal limit to ultralow values,leading to a remarkable enhancement of 87% in the zT over that of the ingotsample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 100, '%', 3],[88.0, 1.2, 'at', 3],[36.0, 87, '%', 0]

Ag2Te
###Synergistic approach towards reproducible high zT in superionic thermoelectric Ag2Te|Navita Jakhar,Nita Bisht,Ankita Katre,Surjeet Singh###
(9516, 9518)
 These values supersede the zT of any Ag2Te previously reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 100, '%', 4],[165.0, 1.2, 'at', 4],[39.0, 87, '%', 1]

Ce
###Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni$_{1-x}$Cu$_x$)$_2$Al$_3$|Peijie Sun,Tusyoshi Ikeno,Toshio Mizushima,Yosikazu Isikawa###
(10085, 10085)
Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni1-xCux)2Al3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 0.125, 'at', 2],[141.0, 100, 'K', 2]

Ni1-xCu
###Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni$_{1-x}$Cu$_x$)$_2$Al$_3$|Peijie Sun,Tusyoshi Ikeno,Toshio Mizushima,Yosikazu Isikawa###
(10087, 10091)
Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni1-xCux)2Al3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[132.0, 0.125, 'at', 2],[135.0, 100, 'K', 2]

Al3
###Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni$_{1-x}$Cu$_x$)$_2$Al$_3$|Peijie Sun,Tusyoshi Ikeno,Toshio Mizushima,Yosikazu Isikawa###
(10095, 10096)
Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni1-xCux)2Al3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.125, 'at', 2],[130.0, 100, 'K', 2]

Cu
###Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni$_{1-x}$Cu$_x$)$_2$Al$_3$|Peijie Sun,Tusyoshi Ikeno,Toshio Mizushima,Yosikazu Isikawa###
(10103, 10103)
 Substitution of Cu for Ni in the Kondo lattice system CeNi2Al3 resultsin a simultaneous optimization of the three interdependent thermoelectricparameters thermoelectric power, electrical and thermal conductivities, wherethe electronic change in conduction band induced by the extra electron of Cu isshown to be crucial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.125, 'at', 1],[123.0, 100, 'K', 1]

Ni
###Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni$_{1-x}$Cu$_x$)$_2$Al$_3$|Peijie Sun,Tusyoshi Ikeno,Toshio Mizushima,Yosikazu Isikawa###
(10107, 10107)
 Substitution of Cu for Ni in the Kondo lattice system CeNi2Al3 resultsin a simultaneous optimization of the three interdependent thermoelectricparameters thermoelectric power, electrical and thermal conductivities, wherethe electronic change in conduction band induced by the extra electron of Cu isshown to be crucial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.125, 'at', 1],[119.0, 100, 'K', 1]

CeNi2Al3
###Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni$_{1-x}$Cu$_x$)$_2$Al$_3$|Peijie Sun,Tusyoshi Ikeno,Toshio Mizushima,Yosikazu Isikawa###
(10119, 10123)
 Substitution of Cu for Ni in the Kondo lattice system CeNi2Al3 resultsin a simultaneous optimization of the three interdependent thermoelectricparameters thermoelectric power, electrical and thermal conductivities, wherethe electronic change in conduction band induced by the extra electron of Cu isshown to be crucial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.125, 'at', 1],[103.0, 100, 'K', 1]

Cu
###Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni$_{1-x}$Cu$_x$)$_2$Al$_3$|Peijie Sun,Tusyoshi Ikeno,Toshio Mizushima,Yosikazu Isikawa###
(10190, 10190)
 Substitution of Cu for Ni in the Kondo lattice system CeNi2Al3 resultsin a simultaneous optimization of the three interdependent thermoelectricparameters thermoelectric power, electrical and thermal conductivities, wherethe electronic change in conduction band induced by the extra electron of Cu isshown to be crucial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0.125, 'at', 1],[36.0, 100, 'K', 1]

Ce
###Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni$_{1-x}$Cu$_x$)$_2$Al$_3$|Peijie Sun,Tusyoshi Ikeno,Toshio Mizushima,Yosikazu Isikawa###
(10264, 10264)
 The realization of ideal thermoelectric optimization inCe(Ni1-xCux)2Al3 indicates that proper electronic tuning of Kondocompounds is a promising approach to efficient thermoelectric materials forcryogenic application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0.125, 'at', 1],[38.0, 100, 'K', 1]

Ni1-xCu
###Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni$_{1-x}$Cu$_x$)$_2$Al$_3$|Peijie Sun,Tusyoshi Ikeno,Toshio Mizushima,Yosikazu Isikawa###
(10266, 10270)
 The realization of ideal thermoelectric optimization inCe(Ni1-xCux)2Al3 indicates that proper electronic tuning of Kondocompounds is a promising approach to efficient thermoelectric materials forcryogenic application.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[43.0, 0.125, 'at', 1],[40.0, 100, 'K', 1]

Al3
###Simultaneously optimizing the interdependent thermoelectric parameters in Ce(Ni$_{1-x}$Cu$_x$)$_2$Al$_3$|Peijie Sun,Tusyoshi Ikeno,Toshio Mizushima,Yosikazu Isikawa###
(10274, 10275)
 The realization of ideal thermoelectric optimization inCe(Ni1-xCux)2Al3 indicates that proper electronic tuning of Kondocompounds is a promising approach to efficient thermoelectric materials forcryogenic application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.125, 'at', 1],[48.0, 100, 'K', 1]

SiCN
###Thermoelectric Properties of Silicon Carbide Nanowires with Nitrogen Dopants and Vacancies|Zhuo Xu,Qing-Rong Zheng,Gang Su###
(10369, 10371)
 The thermoelectric properties of cubic zincblend silicon carbide nanowires(SiCNWs) with nitrogen impurities and vacancies along [111] direction aretheoretically studied by means of atomistic simulations.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 1.1, 'nm', 3],[248.0, 4.6, 'nm', 3],[276.0, 1.78, 'at', 3],[277.0, 900, 'K', 3]

SiCN
###Thermoelectric Properties of Silicon Carbide Nanowires with Nitrogen Dopants and Vacancies|Zhuo Xu,Qing-Rong Zheng,Gang Su###
(10435, 10437)
 It is found that thethermoelectric figure of merit ZT of SiCNWs can be significantly enhanced bydoping N impurities together with making Si vacancies.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1.1, 'nm', 2],[182.0, 4.6, 'nm', 2],[210.0, 1.78, 'at', 2],[211.0, 900, 'K', 2]

N
###Thermoelectric Properties of Silicon Carbide Nanowires with Nitrogen Dopants and Vacancies|Zhuo Xu,Qing-Rong Zheng,Gang Su###
(10453, 10453)
 It is found that thethermoelectric figure of merit ZT of SiCNWs can be significantly enhanced bydoping N impurities together with making Si vacancies.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 1.1, 'nm', 2],[166.0, 4.6, 'nm', 2],[194.0, 1.78, 'at', 2],[195.0, 900, 'K', 2]

Si
###Thermoelectric Properties of Silicon Carbide Nanowires with Nitrogen Dopants and Vacancies|Zhuo Xu,Qing-Rong Zheng,Gang Su###
(10463, 10463)
 It is found that thethermoelectric figure of merit ZT of SiCNWs can be significantly enhanced bydoping N impurities together with making Si vacancies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 1.1, 'nm', 2],[156.0, 4.6, 'nm', 2],[184.0, 1.78, 'at', 2],[185.0, 900, 'K', 2]

N
###Thermoelectric Properties of Silicon Carbide Nanowires with Nitrogen Dopants and Vacancies|Zhuo Xu,Qing-Rong Zheng,Gang Su###
(10506, 10506)
 Aiming at obtaining alarge ZT, we study possible energetically stable configurations, and disclosethat, when N dopants locate at the center, a small number of Si vacancies atcorners are most favored for n<missing VAR>-type nanowires, while a large number of Sivacancies spreading into the flat edge sites are most favored for p<missing VAR>-typenanowires.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1.1, 'nm', 1],[113.0, 4.6, 'nm', 1],[141.0, 1.78, 'at', 1],[142.0, 900, 'K', 1]

Si
###Thermoelectric Properties of Silicon Carbide Nanowires with Nitrogen Dopants and Vacancies|Zhuo Xu,Qing-Rong Zheng,Gang Su###
(10527, 10527)
 Aiming at obtaining alarge ZT, we study possible energetically stable configurations, and disclosethat, when N dopants locate at the center, a small number of Si vacancies atcorners are most favored for n<missing VAR>-type nanowires, while a large number of Sivacancies spreading into the flat edge sites are most favored for p<missing VAR>-typenanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1.1, 'nm', 1],[92.0, 4.6, 'nm', 1],[120.0, 1.78, 'at', 1],[121.0, 900, 'K', 1]

Si
###Thermoelectric Properties of Silicon Carbide Nanowires with Nitrogen Dopants and Vacancies|Zhuo Xu,Qing-Rong Zheng,Gang Su###
(10561, 10561)
 Aiming at obtaining alarge ZT, we study possible energetically stable configurations, and disclosethat, when N dopants locate at the center, a small number of Si vacancies atcorners are most favored for n<missing VAR>-type nanowires, while a large number of Sivacancies spreading into the flat edge sites are most favored for p<missing VAR>-typenanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1.1, 'nm', 1],[58.0, 4.6, 'nm', 1],[86.0, 1.78, 'at', 1],[87.0, 900, 'K', 1]

SiCNW
###Thermoelectric Properties of Silicon Carbide Nanowires with Nitrogen Dopants and Vacancies|Zhuo Xu,Qing-Rong Zheng,Gang Su###
(10598, 10601)
 For the SiCNW with a diameter of 1.1 nm and a length of 4.6 nm, theZT value for the n<missing VAR>-type is shown capable of reaching 1.78 at 900K.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 1.1, 'nm', 0],[18.0, 4.6, 'nm', 0],[46.0, 1.78, 'at', 0],[47.0, 900, 'K', 0]

SiCN
###Thermoelectric Properties of Silicon Carbide Nanowires with Nitrogen Dopants and Vacancies|Zhuo Xu,Qing-Rong Zheng,Gang Su###
(10671, 10673)
 Theconditions to get higher ZT values for longer SiCNWs are also addressed.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1.1, 'nm', 1],[52.0, 4.6, 'nm', 1],[24.0, 1.78, 'at', 1],[23.0, 900, 'K', 1]

InP3
###High intrinsic $ZT$ in InP$_3$ monolayer at room temperature|Shenghui Zhang,Xiaobin Niu,Yiqun Xie,Kui Gong,Hezhu Shao,Yibin Hu,Yin Wang###
(10700, 10702)
High intrinsic ZT in InP3 monolayer at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2.0, 'at', 1],[119.0, 2.2, 'at', 2],[120.0, 300, 'K', 2],[231.0, 1.5, 'can', 5],[244.0, 1, '%', 5]

(InP3)
###High intrinsic $ZT$ in InP$_3$ monolayer at room temperature|Shenghui Zhang,Xiaobin Niu,Yiqun Xie,Kui Gong,Hezhu Shao,Yibin Hu,Yin Wang###
(10802, 10806)
 Here, we propose that the indium triphosphide (InP3)monolayer offers an extraordinary ZT of 2.2 at 300 K by using quantumcalculations within the ballistic thermal transport region.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2.0, 'at', 1],[15.0, 2.2, 'at', 0],[16.0, 300, 'K', 0],[127.0, 1.5, 'can', 3],[140.0, 1, '%', 3]

InP3
###High intrinsic $ZT$ in InP$_3$ monolayer at room temperature|Shenghui Zhang,Xiaobin Niu,Yiqun Xie,Kui Gong,Hezhu Shao,Yibin Hu,Yin Wang###
(10975, 10977)
 These results suggest that the InP3 monolayer is a promisingcandidate for low dimensional thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 2.0, 'at', 5],[154.0, 2.2, 'at', 4],[153.0, 300, 'K', 4],[42.0, 1.5, 'can', 1],[29.0, 1, '%', 1]

In
###Large thermoelectric figure of merit in graphene layered devices at low temperature|Daniel Olaya,Mikel Hurtado-Morales,Daniel Gomez,Octavio Alejandro Castaneda-Uribe,Zhen-Yu. Juang,Yenny Hernandez###
(11136, 11136)
 In this workTE layered devices composed of electrochemically exfoliated graphene (EEG) anda phonon blocking material such as poly (3,4-ethylenedioxythiophene)polystyrenesulfonate (PEDOT<missing VAR>PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at theinterface were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3, ',', 0]

P
###Large thermoelectric figure of merit in graphene layered devices at low temperature|Daniel Olaya,Mikel Hurtado-Morales,Daniel Gomez,Octavio Alejandro Castaneda-Uribe,Zhen-Yu. Juang,Yenny Hernandez###
(11196, 11196)
 In this workTE layered devices composed of electrochemically exfoliated graphene (EEG) anda phonon blocking material such as poly (3,4-ethylenedioxythiophene)polystyrenesulfonate (PEDOT<missing VAR>PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at theinterface were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, ',', 0]

O
###Large thermoelectric figure of merit in graphene layered devices at low temperature|Daniel Olaya,Mikel Hurtado-Morales,Daniel Gomez,Octavio Alejandro Castaneda-Uribe,Zhen-Yu. Juang,Yenny Hernandez###
(11199, 11199)
 In this workTE layered devices composed of electrochemically exfoliated graphene (EEG) anda phonon blocking material such as poly (3,4-ethylenedioxythiophene)polystyrenesulfonate (PEDOT<missing VAR>PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at theinterface were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, ',', 0]

S
###Large thermoelectric figure of merit in graphene layered devices at low temperature|Daniel Olaya,Mikel Hurtado-Morales,Daniel Gomez,Octavio Alejandro Castaneda-Uribe,Zhen-Yu. Juang,Yenny Hernandez###
(11203, 11203)
 In this workTE layered devices composed of electrochemically exfoliated graphene (EEG) anda phonon blocking material such as poly (3,4-ethylenedioxythiophene)polystyrenesulfonate (PEDOT<missing VAR>PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at theinterface were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 3, ',', 0]

P
###Large thermoelectric figure of merit in graphene layered devices at low temperature|Daniel Olaya,Mikel Hurtado-Morales,Daniel Gomez,Octavio Alejandro Castaneda-Uribe,Zhen-Yu. Juang,Yenny Hernandez###
(11210, 11210)
 In this workTE layered devices composed of electrochemically exfoliated graphene (EEG) anda phonon blocking material such as poly (3,4-ethylenedioxythiophene)polystyrenesulfonate (PEDOT<missing VAR>PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at theinterface were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 3, ',', 0]

I
###Large thermoelectric figure of merit in graphene layered devices at low temperature|Daniel Olaya,Mikel Hurtado-Morales,Daniel Gomez,Octavio Alejandro Castaneda-Uribe,Zhen-Yu. Juang,Yenny Hernandez###
(11213, 11213)
 In this workTE layered devices composed of electrochemically exfoliated graphene (EEG) anda phonon blocking material such as poly (3,4-ethylenedioxythiophene)polystyrenesulfonate (PEDOT<missing VAR>PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at theinterface were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 3, ',', 0]

AuN
###Large thermoelectric figure of merit in graphene layered devices at low temperature|Daniel Olaya,Mikel Hurtado-Morales,Daniel Gomez,Octavio Alejandro Castaneda-Uribe,Zhen-Yu. Juang,Yenny Hernandez###
(11223, 11224)
 In this workTE layered devices composed of electrochemically exfoliated graphene (EEG) anda phonon blocking material such as poly (3,4-ethylenedioxythiophene)polystyrenesulfonate (PEDOT<missing VAR>PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at theinterface were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 3, ',', 0]

F
###Large thermoelectric figure of merit in graphene layered devices at low temperature|Daniel Olaya,Mikel Hurtado-Morales,Daniel Gomez,Octavio Alejandro Castaneda-Uribe,Zhen-Yu. Juang,Yenny Hernandez###
(11298, 11298)
 The figure of merit, ZT, of each device was measuredin the cross-plane direction using the Transient Harman Method (THM) andcomplemented with AFM<missing VAR>-based measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 3, ',', 1]

FeSb2
###Tuning thermoelectric power factor by crystal-field and spin-orbit couplings in Kondo lattice materials|Seungmin Hong,Pouyan Ghaemi,Joel E. Moore,Philip W. Phillips###
(11958, 11960)
 We study thermoelectric transport at low temperatures in correlated Kondoinsulators, motivated by the recent observation of a high thermoelectric figureof merit(ZT) in FeSb2 at T<missing VAR> sim 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 10, 'K', 0],[123.0, 5, 'kT', 2]

YbAl3
###Tuning thermoelectric power factor by crystal-field and spin-orbit couplings in Kondo lattice materials|Seungmin Hong,Pouyan Ghaemi,Joel E. Moore,Philip W. Phillips###
(12004, 12006)
 Even at room temperature,correlations have the potential to lead to high ZT, as in YbAl3, one of themost widely used thermoelectric metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 10, 'K', 1],[77.0, 5, 'kT', 1]

At
###Tuning thermoelectric power factor by crystal-field and spin-orbit couplings in Kondo lattice materials|Seungmin Hong,Pouyan Ghaemi,Joel E. Moore,Philip W. Phillips###
(12027, 12027)
 At low temperature correlation effectsare especially worthy of study because fixed band structures are unlikely togive rise to the very small energy gaps Eg sim 5 kT necessary for a weaklycorrelated material to function efficiently at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 10, 'K', 2],[56.0, 5, 'kT', 0]

MoS2
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12198, 12200)
MoS2 Nanoribbons Thermoelectric Generators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12209, 12209)
 In this work, we have designed and simulated new thermoelectric generatorbased on monolayer and few-layer MoS2 nanoribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12245, 12247)
 In this work, we have designed and simulated new thermoelectric generatorbased on monolayer and few-layer MoS2 nanoribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12285, 12287)
 The proposed thermoelectricgenerator is composed of thermocouples made of both n<missing VAR>-type and p<missing VAR>-type MoS2nanoribbon legs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12317, 12317)
 Density Functional Tight-Binding Non-Equilibrium Greens<missing VAR>Function (DFTB-NEGF) method has been used to calculate the transmissionspectrum of MoS2 armchair and zigzag nanoribbons.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12319, 12319)
 Density Functional Tight-Binding Non-Equilibrium Greens<missing VAR>Function (DFTB-NEGF) method has been used to calculate the transmissionspectrum of MoS2 armchair and zigzag nanoribbons.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12322, 12322)
 Density Functional Tight-Binding Non-Equilibrium Greens<missing VAR>Function (DFTB-NEGF) method has been used to calculate the transmissionspectrum of MoS2 armchair and zigzag nanoribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12346, 12348)
 Density Functional Tight-Binding Non-Equilibrium Greens<missing VAR>Function (DFTB-NEGF) method has been used to calculate the transmissionspectrum of MoS2 armchair and zigzag nanoribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12425, 12427)
 Monolayer and bilayer MoS2 armchair nanoribbonsare found to have the highest ZT value for p<missing VAR>-type and n<missing VAR>-type legs, repectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12491, 12493)
Moreover, we have compared the thermoelectric current of doped monolayer MoS2armchair nanoribbons and SZi thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12502, 12502)
Moreover, we have compared the thermoelectric current of doped monolayer MoS2armchair nanoribbons and SZi thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12523, 12525)
 Results indicate that thermoelectriccurrent of MoS2 monolayer nanoribbons is several orders of magnitude higherthan that of Si thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###MoS2 Nanoribbons Thermoelectric Generators|Abbas Arab,Qiliang Li###
(12550, 12550)
 Results indicate that thermoelectriccurrent of MoS2 monolayer nanoribbons is several orders of magnitude higherthan that of Si thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd$_3$As$_2$ crystal|H. H. Wang,X. G. Luo,W. W. Chen,N. Z. Wang,B. Lei,F. B. Meng,C. Shang,L. K. Ma,T. Wu,X. Dai,Z. F. Wang,X. H. Chen###
(12585, 12588)
Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd3As2 crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.17, 'to', 4],[148.0, 1.1, 'by', 4],[160.0, 350, 'K', 4],[173.0, 7, 'Tesla', 4]

Cd3As2
###Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd$_3$As$_2$ crystal|H. H. Wang,X. G. Luo,W. W. Chen,N. Z. Wang,B. Lei,F. B. Meng,C. Shang,L. K. Ma,T. Wu,X. Dai,Z. F. Wang,X. H. Chen###
(12655, 12658)
 We study magneto-thermoelectric figure of merit(ZT) in three-dimensional Dirac semimetal Cd3As2 crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.17, 'to', 2],[78.0, 1.1, 'by', 2],[90.0, 350, 'K', 2],[103.0, 7, 'Tesla', 2]

Cd3As2
###Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd$_3$As$_2$ crystal|H. H. Wang,X. G. Luo,W. W. Chen,N. Z. Wang,B. Lei,F. B. Meng,C. Shang,L. K. Ma,T. Wu,X. Dai,Z. F. Wang,X. H. Chen###
(12818, 12821)
 The hugeenhancement of ZT by magnetic field arises from the linear Dirac band withlarge Fermi velocity and the large electric thermal conductivity inCd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.17, 'to', 1],[82.0, 1.1, 'by', 1],[70.0, 350, 'K', 1],[57.0, 7, 'Tesla', 1]

Bi2Te3
###Thermoelectric properties of Bi2Te3 atomic quintuple thin films|Ferdows Zahid,Roger Lake###
(13184, 13187)
Thermoelectric properties of Bi2Te3 atomic quintuple thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Thermoelectric properties of Bi2Te3 atomic quintuple thin films|Ferdows Zahid,Roger Lake###
(13221, 13224)
 Motivated by recent experimental realizations of quintuple atomic layer filmsof Bi2Te3,the thermoelectric figure of merit, ZT, of the quintuple layer iscalculated and found to increase by a factor of 10 (ZT  7.2) compared to thatof the bulk at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Thermoelectric properties of Bi2Te3 atomic quintuple thin films|Ferdows Zahid,Roger Lake###
(13382, 13382)
 The theoretical model uses abinitio electronic structure calculations (VASP) with full quantum-mechanicalstructure relaxation combined with a Landauer formalism for the linear-responsetransport coefficients.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Thermoelectric properties of Bi2Te3 atomic quintuple thin films|Ferdows Zahid,Roger Lake###
(13385, 13385)
 The theoretical model uses abinitio electronic structure calculations (VASP) with full quantum-mechanicalstructure relaxation combined with a Landauer formalism for the linear-responsetransport coefficients.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3
###Tuning of the Thermoelectric Figure of Merit of CH$_3$NH$_3$MI$_3$ (M=Pb,Sn) Photovoltaic Perovskites|Xavier Mettan,Riccardo Pisoni,Péter Matus,Andrea Pisoni,Jaćim Jaćimović,Bálint Náfrádi,Massimo Spina,Davor Pavuna,László Forró,Endre Horváth###
(13449, 13454)
Tuning of the Thermoelectric Figure of Merit of CH3NH3M<missing VAR>I3 (M<missing VAR>Pb,Sn) Photovoltaic Perovskites.
Featurization terminated normally.
0.75,0,0,0,0,0.125,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Tuning of the Thermoelectric Figure of Merit of CH$_3$NH$_3$MI$_3$ (M=Pb,Sn) Photovoltaic Perovskites|Xavier Mettan,Riccardo Pisoni,Péter Matus,Andrea Pisoni,Jaćim Jaćimović,Bálint Náfrádi,Massimo Spina,Davor Pavuna,László Forró,Endre Horváth###
(13456, 13457)
Tuning of the Thermoelectric Figure of Merit of CH3NH3M<missing VAR>I3 (M<missing VAR>Pb,Sn) Photovoltaic Perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Tuning of the Thermoelectric Figure of Merit of CH$_3$NH$_3$MI$_3$ (M=Pb,Sn) Photovoltaic Perovskites|Xavier Mettan,Riccardo Pisoni,Péter Matus,Andrea Pisoni,Jaćim Jaćimović,Bálint Náfrádi,Massimo Spina,Davor Pavuna,László Forró,Endre Horváth###
(13461, 13461)
Tuning of the Thermoelectric Figure of Merit of CH3NH3M<missing VAR>I3 (M<missing VAR>Pb,Sn) Photovoltaic Perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Tuning of the Thermoelectric Figure of Merit of CH$_3$NH$_3$MI$_3$ (M=Pb,Sn) Photovoltaic Perovskites|Xavier Mettan,Riccardo Pisoni,Péter Matus,Andrea Pisoni,Jaćim Jaćimović,Bálint Náfrádi,Massimo Spina,Davor Pavuna,László Forró,Endre Horváth###
(13463, 13463)
Tuning of the Thermoelectric Figure of Merit of CH3NH3M<missing VAR>I3 (M<missing VAR>Pb,Sn) Photovoltaic Perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3
###Tuning of the Thermoelectric Figure of Merit of CH$_3$NH$_3$MI$_3$ (M=Pb,Sn) Photovoltaic Perovskites|Xavier Mettan,Riccardo Pisoni,Péter Matus,Andrea Pisoni,Jaćim Jaćimović,Bálint Náfrádi,Massimo Spina,Davor Pavuna,László Forró,Endre Horváth###
(13580, 13585)
 We have studied the CH3NH3M<missing VAR>I3(M<missing VAR>Pb,Sn) samples in pristine form showing very low ZT values for bothmaterials; however, photoinduced doping (in M<missing VAR>Pb) and chemical doping (in M<missing VAR>Sn)indicate that, by further doping optimization, ZT can be enhanced towardunity and reach the performance level of the presently most efficientthermoelectric materials.
Featurization terminated normally.
0.75,0,0,0,0,0.125,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Tuning of the Thermoelectric Figure of Merit of CH$_3$NH$_3$MI$_3$ (M=Pb,Sn) Photovoltaic Perovskites|Xavier Mettan,Riccardo Pisoni,Péter Matus,Andrea Pisoni,Jaćim Jaćimović,Bálint Náfrádi,Massimo Spina,Davor Pavuna,László Forró,Endre Horváth###
(13587, 13588)
 We have studied the CH3NH3M<missing VAR>I3(M<missing VAR>Pb,Sn) samples in pristine form showing very low ZT values for bothmaterials; however, photoinduced doping (in M<missing VAR>Pb) and chemical doping (in M<missing VAR>Sn)indicate that, by further doping optimization, ZT can be enhanced towardunity and reach the performance level of the presently most efficientthermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Tuning of the Thermoelectric Figure of Merit of CH$_3$NH$_3$MI$_3$ (M=Pb,Sn) Photovoltaic Perovskites|Xavier Mettan,Riccardo Pisoni,Péter Matus,Andrea Pisoni,Jaćim Jaćimović,Bálint Náfrádi,Massimo Spina,Davor Pavuna,László Forró,Endre Horváth###
(13593, 13593)
 We have studied the CH3NH3M<missing VAR>I3(M<missing VAR>Pb,Sn) samples in pristine form showing very low ZT values for bothmaterials; however, photoinduced doping (in M<missing VAR>Pb) and chemical doping (in M<missing VAR>Sn)indicate that, by further doping optimization, ZT can be enhanced towardunity and reach the performance level of the presently most efficientthermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Tuning of the Thermoelectric Figure of Merit of CH$_3$NH$_3$MI$_3$ (M=Pb,Sn) Photovoltaic Perovskites|Xavier Mettan,Riccardo Pisoni,Péter Matus,Andrea Pisoni,Jaćim Jaćimović,Bálint Náfrádi,Massimo Spina,Davor Pavuna,László Forró,Endre Horváth###
(13595, 13595)
 We have studied the CH3NH3M<missing VAR>I3(M<missing VAR>Pb,Sn) samples in pristine form showing very low ZT values for bothmaterials; however, photoinduced doping (in M<missing VAR>Pb) and chemical doping (in M<missing VAR>Sn)indicate that, by further doping optimization, ZT can be enhanced towardunity and reach the performance level of the presently most efficientthermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Tuning of the Thermoelectric Figure of Merit of CH$_3$NH$_3$MI$_3$ (M=Pb,Sn) Photovoltaic Perovskites|Xavier Mettan,Riccardo Pisoni,Péter Matus,Andrea Pisoni,Jaćim Jaćimović,Bálint Náfrádi,Massimo Spina,Davor Pavuna,László Forró,Endre Horváth###
(13636, 13636)
 We have studied the CH3NH3M<missing VAR>I3(M<missing VAR>Pb,Sn) samples in pristine form showing very low ZT values for bothmaterials; however, photoinduced doping (in M<missing VAR>Pb) and chemical doping (in M<missing VAR>Sn)indicate that, by further doping optimization, ZT can be enhanced towardunity and reach the performance level of the presently most efficientthermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Tuning of the Thermoelectric Figure of Merit of CH$_3$NH$_3$MI$_3$ (M=Pb,Sn) Photovoltaic Perovskites|Xavier Mettan,Riccardo Pisoni,Péter Matus,Andrea Pisoni,Jaćim Jaćimović,Bálint Náfrádi,Massimo Spina,Davor Pavuna,László Forró,Endre Horváth###
(13649, 13649)
 We have studied the CH3NH3M<missing VAR>I3(M<missing VAR>Pb,Sn) samples in pristine form showing very low ZT values for bothmaterials; however, photoinduced doping (in M<missing VAR>Pb) and chemical doping (in M<missing VAR>Sn)indicate that, by further doping optimization, ZT can be enhanced towardunity and reach the performance level of the presently most efficientthermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hf
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13730, 13730)
Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zr
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13732, 13732)
Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiSn
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13734, 13735)
Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgAgSb
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13751, 13753)
 Half-Heusler alloys (MgAgSb structure) are promising thermoelectricmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiSn
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13769, 13770)
 R<missing VAR>NiSn half-Heusler phases (R<missing VAR>Hf, Zr, Ti) are the most studied inview of their thermal stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hf
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13780, 13780)
 R<missing VAR>NiSn half-Heusler phases (R<missing VAR>Hf, Zr, Ti) are the most studied inview of their thermal stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zr
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13783, 13783)
 R<missing VAR>NiSn half-Heusler phases (R<missing VAR>Hf, Zr, Ti) are the most studied inview of their thermal stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13786, 13786)
 R<missing VAR>NiSn half-Heusler phases (R<missing VAR>Hf, Zr, Ti) are the most studied inview of their thermal stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13847, 13847)
 The highest dimensionless figure of merit (ZT)obtained is 1 in the temperature range 450-900o<missing VAR>C, primarily achieved innanostructured alloys.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hf
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13895, 13895)
 Through proper annealing, ZT1.2 has been obtained in aprevious ZT1 n<missing VAR>-type (Hf,Zr)NiSn phase without the nanostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zr
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13897, 13897)
 Through proper annealing, ZT1.2 has been obtained in aprevious ZT1 n<missing VAR>-type (Hf,Zr)NiSn phase without the nanostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiSn
###Uncovering High Thermoelectric Figure of Merit in (Hf,Zr)NiSn Half-Heusler Alloys|L. Chen,S. Gao,X. Zeng,A. M. Dehkordi,T. M Tritt,S. J. Poon###
(13899, 13900)
 Through proper annealing, ZT1.2 has been obtained in aprevious ZT1 n<missing VAR>-type (Hf,Zr)NiSn phase without the nanostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Thermoelectric enhanced ZT regime calculated by Fermi integral method|Hirofumi Kakemoto###
(14073, 14076)
 We report about detailed dimensionless figure of merit (ZT) calculated byusing Fermi integral method (compared with Bi2Te3, CoSb3, andSrTiO3) for thermoelectric (TE) materials design and its moduleapplication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoSb3
###Thermoelectric enhanced ZT regime calculated by Fermi integral method|Hirofumi Kakemoto###
(14079, 14081)
 We report about detailed dimensionless figure of merit (ZT) calculated byusing Fermi integral method (compared with Bi2Te3, CoSb3, andSrTiO3) for thermoelectric (TE) materials design and its moduleapplication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Thermoelectric enhanced ZT regime calculated by Fermi integral method|Hirofumi Kakemoto###
(14089, 14090)
 We report about detailed dimensionless figure of merit (ZT) calculated byusing Fermi integral method (compared with Bi2Te3, CoSb3, andSrTiO3) for thermoelectric (TE) materials design and its moduleapplication.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(S)
###Thermoelectric enhanced ZT regime calculated by Fermi integral method|Hirofumi Kakemoto###
(14145, 14147)
 Particularly, TE properties electrical conductivity (smallpolaron sigma(m)), Seebeck coefficient (S), thermal conductivity(kappae), and ZT were calculated by using reduced energy(zetaE/kB T), as the functions of T<missing VAR>, and effective mass (m/m).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Thermoelectric enhanced ZT regime calculated by Fermi integral method|Hirofumi Kakemoto###
(14184, 14184)
 Particularly, TE properties electrical conductivity (smallpolaron sigma(m)), Seebeck coefficient (S), thermal conductivity(kappae), and ZT were calculated by using reduced energy(zetaE/kB T), as the functions of T<missing VAR>, and effective mass (m/m).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures|Hatef Sadeghi,Sara Sangtarash,Colin J. Lambert###
(14656, 14658)
Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 0.3, ',', 4]

(MoS2)
###Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures|Hatef Sadeghi,Sara Sangtarash,Colin J. Lambert###
(14824, 14828)
To demonstrate this enhancement of thermoelectric efficiency ZT, we analyse thethermoelectric performance of monolayer molybdenum disulphide (MoS2) sandwichedbetween two graphene monolayers and demonstrate that the cross-plane (CP) ZT issignificantly enhanced compared with the pristine parent materials.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.3, ',', 1]

(CP)
###Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures|Hatef Sadeghi,Sara Sangtarash,Colin J. Lambert###
(14853, 14856)
To demonstrate this enhancement of thermoelectric efficiency ZT, we analyse thethermoelectric performance of monolayer molybdenum disulphide (MoS2) sandwichedbetween two graphene monolayers and demonstrate that the cross-plane (CP) ZT issignificantly enhanced compared with the pristine parent materials.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.3, ',', 1]

MoS2
###Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures|Hatef Sadeghi,Sara Sangtarash,Colin J. Lambert###
(14892, 14894)
 For theparent monolayer of MoS2, we find that ZT can be as high as approximately 0.3,whereas monolayer graphene has a negligibly small ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.3, ',', 0]

In
###Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures|Hatef Sadeghi,Sara Sangtarash,Colin J. Lambert###
(14940, 14940)
 In contrast for thegraphene/MoS2/graphene heterostructure, we find that the CP ZT can be as largeas 2.8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.3, ',', 1]

MoS2
###Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures|Hatef Sadeghi,Sara Sangtarash,Colin J. Lambert###
(14951, 14953)
 In contrast for thegraphene/MoS2/graphene heterostructure, we find that the CP ZT can be as largeas 2.8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0.3, ',', 1]

CP
###Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures|Hatef Sadeghi,Sara Sangtarash,Colin J. Lambert###
(14968, 14969)
 In contrast for thegraphene/MoS2/graphene heterostructure, we find that the CP ZT can be as largeas 2.8.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0.3, ',', 1]

MoS2
###Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures|Hatef Sadeghi,Sara Sangtarash,Colin J. Lambert###
(15055, 15057)
 One contribution to this enhancement is a reduction of the thermalconductance of the van der Waals heterostructure compared with the parentmaterials, caused by a combination of boundary scattering at the MoS2/grapheneinterface which suppresses the phonons transmission and the lower Debyefrequency of monolayer MoS2, which filters phonons from the monolayer graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.3, ',', 2]

MoS2
###Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures|Hatef Sadeghi,Sara Sangtarash,Colin J. Lambert###
(15089, 15091)
 One contribution to this enhancement is a reduction of the thermalconductance of the van der Waals heterostructure compared with the parentmaterials, caused by a combination of boundary scattering at the MoS2/grapheneinterface which suppresses the phonons transmission and the lower Debyefrequency of monolayer MoS2, which filters phonons from the monolayer graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0.3, ',', 2]

ZrNiPb
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15186, 15188)
Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0.7, 'at', 2],[137.0, 1.3, 'in', 3],[154.0, 0.03, ',', 3],[158.0, 773, 'K', 3],[374.0, 25, '%', 7],[454.0, 13.6, '%', 9]

ZrNiPb
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15243, 15245)
 Of particular interest isthe ZrNiPb based half Heusler (HH) alloy where an optimal value of ZT  0.7 at773 K has been achieved by co-doping Sn and Bi at Pb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0.7, 'at', 0],[80.0, 1.3, 'in', 1],[97.0, 0.03, ',', 1],[101.0, 773, 'K', 1],[317.0, 25, '%', 5],[397.0, 13.6, '%', 7]

(HH)
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15253, 15256)
 Of particular interest isthe ZrNiPb based half Heusler (HH) alloy where an optimal value of ZT  0.7 at773 K has been achieved by co-doping Sn and Bi at Pb site.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.7, 'at', 0],[69.0, 1.3, 'in', 1],[86.0, 0.03, ',', 1],[90.0, 773, 'K', 1],[306.0, 25, '%', 5],[386.0, 13.6, '%', 7]

K
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15278, 15278)
 Of particular interest isthe ZrNiPb based half Heusler (HH) alloy where an optimal value of ZT  0.7 at773 K has been achieved by co-doping Sn and Bi at Pb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.7, 'at', 0],[47.0, 1.3, 'in', 1],[64.0, 0.03, ',', 1],[68.0, 773, 'K', 1],[284.0, 25, '%', 5],[364.0, 13.6, '%', 7]

Sn
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15292, 15292)
 Of particular interest isthe ZrNiPb based half Heusler (HH) alloy where an optimal value of ZT  0.7 at773 K has been achieved by co-doping Sn and Bi at Pb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.7, 'at', 0],[33.0, 1.3, 'in', 1],[50.0, 0.03, ',', 1],[54.0, 773, 'K', 1],[270.0, 25, '%', 5],[350.0, 13.6, '%', 7]

Bi
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15296, 15296)
 Of particular interest isthe ZrNiPb based half Heusler (HH) alloy where an optimal value of ZT  0.7 at773 K has been achieved by co-doping Sn and Bi at Pb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.7, 'at', 0],[29.0, 1.3, 'in', 1],[46.0, 0.03, ',', 1],[50.0, 773, 'K', 1],[266.0, 25, '%', 5],[346.0, 13.6, '%', 7]

Pb
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15300, 15300)
 Of particular interest isthe ZrNiPb based half Heusler (HH) alloy where an optimal value of ZT  0.7 at773 K has been achieved by co-doping Sn and Bi at Pb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.7, 'at', 0],[25.0, 1.3, 'in', 1],[42.0, 0.03, ',', 1],[46.0, 773, 'K', 1],[262.0, 25, '%', 5],[342.0, 13.6, '%', 7]

In
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15305, 15305)
 In this work, weidentify an excellent ZT of 1.3 in ZrNi1+xPb0.38Sn0.6Bi0.02 (x<missing VAR> 0.03, at 773 K)composite alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0.7, 'at', 1],[20.0, 1.3, 'in', 0],[37.0, 0.03, ',', 0],[41.0, 773, 'K', 0],[257.0, 25, '%', 4],[337.0, 13.6, '%', 6]

ZrNi1+xPb0.38Sn0.6Bi0.02
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15327, 15337)
 In this work, weidentify an excellent ZT of 1.3 in ZrNi1+xPb0.38Sn0.6Bi0.02 (x<missing VAR> 0.03, at 773 K)composite alloy.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[54.0, 0.7, 'at', 1],[2.0, 1.3, 'in', 0],[5.0, 0.03, ',', 0],[9.0, 773, 'K', 0],[225.0, 25, '%', 4],[305.0, 13.6, '%', 6]

(FH)
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15398, 15401)
 This is achieved by synergistic modulation of electronic aswell as thermal properties via introduction of minor phase of full Heusler (FH)in the HH matrix through compositional tuning approach.
Featurization successful!
0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0.7, 'at', 2],[73.0, 1.3, 'in', 1],[56.0, 0.03, ',', 1],[52.0, 773, 'K', 1],[161.0, 25, '%', 3],[241.0, 13.6, '%', 5]

HH
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15408, 15409)
 This is achieved by synergistic modulation of electronic aswell as thermal properties via introduction of minor phase of full Heusler (FH)in the HH matrix through compositional tuning approach.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 0.7, 'at', 2],[83.0, 1.3, 'in', 1],[66.0, 0.03, ',', 1],[62.0, 773, 'K', 1],[153.0, 25, '%', 3],[233.0, 13.6, '%', 5]

Ni
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15424, 15424)
 These Ni-richZrNi1+xPb0.38Sn0.6Bi0.02 alloys were synthesized via Arc melting followed byconsolidation via Spark Plasma Sintering (SPS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.7, 'at', 3],[99.0, 1.3, 'in', 2],[82.0, 0.03, ',', 2],[78.0, 773, 'K', 2],[138.0, 25, '%', 2],[218.0, 13.6, '%', 4]

ZrNi1+xPb0.38Sn0.6Bi0.02
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15429, 15439)
 These Ni-richZrNi1+xPb0.38Sn0.6Bi0.02 alloys were synthesized via Arc melting followed byconsolidation via Spark Plasma Sintering (SPS).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[156.0, 0.7, 'at', 3],[104.0, 1.3, 'in', 2],[87.0, 0.03, ',', 2],[83.0, 773, 'K', 2],[123.0, 25, '%', 2],[203.0, 13.6, '%', 4]

(SPS)
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15468, 15472)
 These Ni-richZrNi1+xPb0.38Sn0.6Bi0.02 alloys were synthesized via Arc melting followed byconsolidation via Spark Plasma Sintering (SPS).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 0.7, 'at', 3],[143.0, 1.3, 'in', 2],[126.0, 0.03, ',', 2],[122.0, 773, 'K', 2],[90.0, 25, '%', 2],[170.0, 13.6, '%', 4]

S
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15492, 15492)
 These alloys were characterizedby XRD and SEM that shows formation of nanocomposites comprising of HH matrixphase and FH secondary minor phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 0.7, 'at', 4],[167.0, 1.3, 'in', 3],[150.0, 0.03, ',', 3],[146.0, 773, 'K', 3],[70.0, 25, '%', 1],[150.0, 13.6, '%', 3]

HH
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15510, 15511)
 These alloys were characterizedby XRD and SEM that shows formation of nanocomposites comprising of HH matrixphase and FH secondary minor phases.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 0.7, 'at', 4],[185.0, 1.3, 'in', 3],[168.0, 0.03, ',', 3],[164.0, 773, 'K', 3],[51.0, 25, '%', 1],[131.0, 13.6, '%', 3]

FH
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15520, 15521)
 These alloys were characterizedby XRD and SEM that shows formation of nanocomposites comprising of HH matrixphase and FH secondary minor phases.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 0.7, 'at', 4],[195.0, 1.3, 'in', 3],[178.0, 0.03, ',', 3],[174.0, 773, 'K', 3],[41.0, 25, '%', 1],[121.0, 13.6, '%', 3]

(S)
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15585, 15587)
 The thermoelectric compatibility factor (S) is also calculatedfor all samples.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 0.7, 'at', 6],[260.0, 1.3, 'in', 5],[243.0, 0.03, ',', 5],[239.0, 773, 'K', 5],[23.0, 25, '%', 1],[55.0, 13.6, '%', 1]

ZrNi1.03Pb0.38Sn0.6Bi0.02
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15624, 15632)
 The theoretically calculated thermoelectric device efficiencyof best performing sample ZrNi1.03Pb0.38Sn0.6Bi0.02 is estimated to be 13.6%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.33993399339933994,0,0,0,0,0,0,0,0,0,0,0,0.33003300330033003,0,0,0,0,0,0,0,0,0,0.198019801980198,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1254125412541254,0.0066006600660066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 0.7, 'at', 7],[299.0, 1.3, 'in', 6],[282.0, 0.03, ',', 6],[278.0, 773, 'K', 6],[62.0, 25, '%', 2],[10.0, 13.6, '%', 0]

HH
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15663, 15664)
Our results imply that controlled fine tuning in HH compounds throughcompositional tuning approach would lead to novel off-stoichiometric HH phaseswith enhanced ZT value for efficient thermoelectric device fabrication.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 0.7, 'at', 8],[338.0, 1.3, 'in', 7],[321.0, 0.03, ',', 7],[317.0, 773, 'K', 7],[101.0, 25, '%', 3],[21.0, 13.6, '%', 1]

HH
###Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys|Amardeep Sagar,Aman Bhardwaj,Andrei Novitskii,Vladimir Khovaylo,Satyabrata Patnaik###
(15689, 15690)
Our results imply that controlled fine tuning in HH compounds throughcompositional tuning approach would lead to novel off-stoichiometric HH phaseswith enhanced ZT value for efficient thermoelectric device fabrication.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 0.7, 'at', 8],[364.0, 1.3, 'in', 7],[347.0, 0.03, ',', 7],[343.0, 773, 'K', 7],[127.0, 25, '%', 3],[47.0, 13.6, '%', 1]

SiN
###Size dependent thermoelectric properties of silicon nanowires|Lihong Shi,Donglai Yao,Gang Zhang,Baowen Li###
(16017, 16018)
 By using first-principles tight-binding electronic structure calculation andBoltzmann transport equation, we investigate the size dependence ofthermoelectric properties of silicon nanowires (SiNWs).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 50, '%', 6],[154.0, 29, 'Si', 6],[184.0, 31, '%', 6]

NW
###Size dependent thermoelectric properties of silicon nanowires|Lihong Shi,Donglai Yao,Gang Zhang,Baowen Li###
(16124, 16125)
 Our results demonstrate that in thermoelectric application, NWwith small diameter is preferred.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 50, '%', 2],[47.0, 29, 'Si', 2],[77.0, 31, '%', 2]

Si0.529Si0.5
###Size dependent thermoelectric properties of silicon nanowires|Lihong Shi,Donglai Yao,Gang Zhang,Baowen Li###
(16178, 16181)
 With 50% 29Si doping (28Si0.529Si0.5NW), the ZT can be increased by 31%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 50, '%', 0],[6.0, 29, 'Si', 0],[21.0, 31, '%', 0]

W
###Size dependent thermoelectric properties of silicon nanowires|Lihong Shi,Donglai Yao,Gang Zhang,Baowen Li###
(16185, 16185)
 With 50% 29Si doping (28Si0.529Si0.5NW), the ZT can be increased by 31%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 50, '%', 0],[13.0, 29, 'Si', 0],[17.0, 31, '%', 0]

Bi1-xSb
###Large thermoelectric figure of merit for 3D topological Anderson insulators via line dislocation engineering|Oleg A. Tretiakov,Ar. Abanov,Shuichi Murakami,Jairo Sinova###
(16367, 16371)
 We show that at high densities ofdislocations the thermoelectric figure of merit ZT can be dominated byone-dimensional topologically-protected conducting states channeled through thelattice screw dislocations in the topological insulator materials with anon-zero time-reversal-invariant momentum such as Bi1-xSbx<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[142.0, 3, 'D', 2]

LaSO
###Giant thermoelectric figure of merit in multivalley high-complexity-factor LaSO|Roberta Farris,Francesco Ricci,Giulio Casu,Diana Dahliah,Geoffroy Hautier,Gian-Marco Rignanese,Vincenzo Fiorentini###
(16729, 16731)
Giant thermoelectric figure of merit in multivalley high-complexity-factor LaSO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 6, 'at', 1],[27.0, 1100, 'K', 1]

LaSO
###Giant thermoelectric figure of merit in multivalley high-complexity-factor LaSO|Roberta Farris,Francesco Ricci,Giulio Casu,Diana Dahliah,Geoffroy Hautier,Gian-Marco Rignanese,Vincenzo Fiorentini###
(16772, 16774)
 We report a giant thermoelectric figure of merit ZT (up to 6 at 1100 K) inn<missing VAR>-doped lanthanum oxysulphate LaSO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 6, 'at', 0],[14.0, 1100, 'K', 0]

In
###Improved Thermoelectric Cooling Based on the Thomson Effect|G. Jeffrey Snyder,Raghav Khanna,Eric S. Toberer,Nicholas A. Heinz,Wolfgang Seifert###
(17120, 17120)
 Inthis study, we investigate the theoretical performance of thermoelectriccoolers that maintain self-compatibility across the device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KMgSb
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17455, 17457)
Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb An textitab-initio study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, -3, ',', 3],[336.0, 49, '%', 6]

KMgSb
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17522, 17524)
 Through a combined first-principles and Boltzmann transport theory, wesystematically investigate the thermal and electrical transport properties ofthe unexplored ternary quasi two-dimensional KMgSb system of KMgX<missing VAR> (X<missing VAR>  P, As,Sb, and Bi) family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, -3, ',', 2],[269.0, 49, '%', 5]

KMg
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17530, 17531)
 Through a combined first-principles and Boltzmann transport theory, wesystematically investigate the thermal and electrical transport properties ofthe unexplored ternary quasi two-dimensional KMgSb system of KMgX<missing VAR> (X<missing VAR>  P, As,Sb, and Bi) family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, -3, ',', 2],[262.0, 49, '%', 5]

P
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17538, 17538)
 Through a combined first-principles and Boltzmann transport theory, wesystematically investigate the thermal and electrical transport properties ofthe unexplored ternary quasi two-dimensional KMgSb system of KMgX<missing VAR> (X<missing VAR>  P, As,Sb, and Bi) family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, -3, ',', 2],[255.0, 49, '%', 5]

As
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17541, 17541)
 Through a combined first-principles and Boltzmann transport theory, wesystematically investigate the thermal and electrical transport properties ofthe unexplored ternary quasi two-dimensional KMgSb system of KMgX<missing VAR> (X<missing VAR>  P, As,Sb, and Bi) family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, -3, ',', 2],[252.0, 49, '%', 5]

Sb
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17545, 17545)
 Through a combined first-principles and Boltzmann transport theory, wesystematically investigate the thermal and electrical transport properties ofthe unexplored ternary quasi two-dimensional KMgSb system of KMgX<missing VAR> (X<missing VAR>  P, As,Sb, and Bi) family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, -3, ',', 2],[248.0, 49, '%', 5]

Bi
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17550, 17550)
 Through a combined first-principles and Boltzmann transport theory, wesystematically investigate the thermal and electrical transport properties ofthe unexplored ternary quasi two-dimensional KMgSb system of KMgX<missing VAR> (X<missing VAR>  P, As,Sb, and Bi) family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, -3, ',', 2],[243.0, 49, '%', 5]

KMgSb
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17567, 17569)
 Herein, the transport properties of KMgSb under theapplication of hydrostatic pressure and alloy engineering are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, -3, ',', 1],[224.0, 49, '%', 4]

At
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17595, 17595)
 At acarrier concentration of sim8times1019mathrmcm-3, the figure ofmerit zT (sim0.75) for both the n<missing VAR>-type and p<missing VAR>-type of KMgSb closelymatched, making it an attractive option for engineering both legs of athermoelectric device using the same material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, -3, ',', 0],[198.0, 49, '%', 3]

KMgSb
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17652, 17654)
 At acarrier concentration of sim8times1019mathrmcm-3, the figure ofmerit zT (sim0.75) for both the n<missing VAR>-type and p<missing VAR>-type of KMgSb closelymatched, making it an attractive option for engineering both legs of athermoelectric device using the same material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, -3, ',', 0],[139.0, 49, '%', 3]

In
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17758, 17758)
 In the case of substitutional doping (replacing 50 %Sb by Bi atom), we observed sim49% (in-plane) increase in the peakthermoelectric figure of merit (zT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, -3, ',', 3],[35.0, 49, '%', 0]

Sb
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17778, 17778)
 In the case of substitutional doping (replacing 50 %Sb by Bi atom), we observed sim49% (in-plane) increase in the peakthermoelectric figure of merit (zT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, -3, ',', 3],[15.0, 49, '%', 0]

Bi
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17782, 17782)
 In the case of substitutional doping (replacing 50 %Sb by Bi atom), we observed sim49% (in-plane) increase in the peakthermoelectric figure of merit (zT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, -3, ',', 3],[11.0, 49, '%', 0]

K
###Effect of hydrostatic pressure and alloying on thermoelectric properties of van der Waals solid KMgSb: An \textit{ab-initio} study|Vikrant Chaudhary,Tulika Maitra,Tashi Nautiyal,Jeroen van den Brink,Hem C. Kandpal###
(17851, 17851)
 The maximum zT value obtained after alloyengineering is sim1.45 at 900K temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, -3, ',', 4],[58.0, 49, '%', 1]

Ge
###Thermoelectric propertie of Ge based electron crystal phonon glass materials|Dimitri Tainoff,André Barski,Eric Prestat,Daniel Bourgault,Emmanuell Hadji,Yanqing Liu,Pascale Bayle-Guillemaud,Olivier Bourgeois###
(18001, 18001)
Thermoelectric propertie of Ge based electron crystal phonon glass materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 30, ',', 4],[227.0, 0.15, 'making', 5]

GeMn
###Thermoelectric propertie of Ge based electron crystal phonon glass materials|Dimitri Tainoff,André Barski,Eric Prestat,Daniel Bourgault,Emmanuell Hadji,Yanqing Liu,Pascale Bayle-Guillemaud,Olivier Bourgeois###
(18065, 18066)
 We investigate thegrowth of GeMn layers along with a thorough structural characterization ofthis materials at the nanoscale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 30, ',', 2],[162.0, 0.15, 'making', 3]

Ge
###Thermoelectric propertie of Ge based electron crystal phonon glass materials|Dimitri Tainoff,André Barski,Eric Prestat,Daniel Bourgault,Emmanuell Hadji,Yanqing Liu,Pascale Bayle-Guillemaud,Olivier Bourgeois###
(18247, 18247)
 The thermoelectricperformance ZT of such material is as high as 0.15 making them a promisingthermoelectric p<missing VAR>-type material for Ge related application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 30, ',', 1],[19.0, 0.15, 'making', 0]

At
###Thermal transport in the Falicov-Kimball model on a Bethe lattice|A. V. Joura,D. O. Demchenko,J. K. Freericks###
(18425, 18425)
 At low temperature it is unlikelythat these systems can be employed in thermoelectric devices due to the lowconductivities and due to a larger lattice contribution to the thermalconductivity kappaL<missing VAR>, but at high temperature, the thermoelectric parametersappear more promising for devices due to a significant enhancement of ZT and asmaller relative contribution by the lattice thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(S)
###Thermoelectric transport properties of a T-shaped double quantum dot system in the Coulomb blockade regime|A. L. Monteros,G. S. Uppal,S. R. McMillan,M. Crisan,I. Tifrea###
(18673, 18675)
 The systems<missing VAR> electricalconduction (G) and the fundamental thermoelectric parameters such as theSeebeck coefficient (S) and the thermal conductivity (kappa), along withthe systems<missing VAR> thermoelectric figure of merit (ZT) are numerically estimatedbased on a Greens<missing VAR> function formalism that includes contributions up to theHartree-Fock level.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###High thermoelectric performance of graphite nanofibers|Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz###
(18919, 18919)
 Graphite nanofibers (G<missing VAR>NFs) have been demonstrated to be a promising materialfor hydrogen storage and heat management in electronic devices.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 3.55, 'in', 2],[235.0, 0.5, 'nm', 2],[243.0, 1.1, 'for', 2],[246.0, 1.1, 'nm', 2],[259.0, 14, 'C', 3],[286.0, 5, ',', 3],[294.0, 8, 'if', 3]

N
###High thermoelectric performance of graphite nanofibers|Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz###
(18987, 18987)
 Here, by meansof first-principles and transport simulations, we show that G<missing VAR>NFs can also be anexcellent material for thermoelectric applications thanks to the interlayerweak van der Waals interaction that induces low thermal conductance and astep-like shape in the electronic transmission with mini-gaps, which arenecessary ingredients to achieve high thermoelectric performance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 3.55, 'in', 1],[167.0, 0.5, 'nm', 1],[175.0, 1.1, 'for', 1],[178.0, 1.1, 'nm', 1],[191.0, 14, 'C', 2],[218.0, 5, ',', 2],[226.0, 8, 'if', 2]

N
###High thermoelectric performance of graphite nanofibers|Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz###
(19102, 19102)
 This studyunveils that the platelet form of G<missing VAR>NFs in which graphite layers areperpendicular to the fiber axis can exhibit outstanding thermoelectricproperties with a figure of merit ZT reaching 3.55 in a 0.5 nm diameter fiberand 1.1 for a 1.1 nm diameter one.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 3.55, 'in', 0],[52.0, 0.5, 'nm', 0],[60.0, 1.1, 'for', 0],[63.0, 1.1, 'nm', 0],[76.0, 14, 'C', 1],[103.0, 5, ',', 1],[111.0, 8, 'if', 1]

N
###High thermoelectric performance of graphite nanofibers|Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz###
(19253, 19253)
 Interestingly, by introducing 14C isotopedoping, ZT can even be enhanced up to more than 5, and more than 8 if weinclude the effect of finite phonon mean-free path, which demonstrates theamazing thermoelectric potential of G<missing VAR>NFs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 3.55, 'in', 1],[99.0, 0.5, 'nm', 1],[91.0, 1.1, 'for', 1],[88.0, 1.1, 'nm', 1],[75.0, 14, 'C', 0],[48.0, 5, ',', 0],[40.0, 8, 'if', 0]

In
###Enhanced thermoelectric performance of phosphorene by strain-induced band convergence|H. Y. Lv,W. J. Lu,D. F. Shao,Y. P. Sun###
(19316, 19316)
 In this work, we propose to further enhancethe thermoelectric performance of phosphorene by the strain-induced bandconvergence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 5, '%', 2],[181.0, 1.65, 'at', 3],[226.0, 8, '%', 4],[249.0, 2.12, 'in', 4]

K
###Enhanced thermoelectric performance of phosphorene by strain-induced band convergence|H. Y. Lv,W. J. Lu,D. F. Shao,Y. P. Sun###
(19502, 19502)
 The largest ZT value of 1.65 at300 K is then achieved conservatively estimated by using the bulk latticethermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 5, '%', 1],[5.0, 1.65, 'at', 0],[40.0, 8, '%', 1],[63.0, 2.12, 'in', 1]

S
###Thermoelectric coefficients and the figure of merit for large open quantum dots|Robert S. Whitney,Keiji Saito###
(19728, 19728)
 We calculate the full distribution of the thermoelectriccoefficients (Seebeck S and Peltier Pi), and the thermoelectric figure ofmerit ZT, for large open dots at arbitrary temperature and external magneticfield, when the number of modes in the left and right leads (Nrm L<missing VAR> andNrm R) are large.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric coefficients and the figure of merit for large open quantum dots|Robert S. Whitney,Keiji Saito###
(19802, 19802)
 We calculate the full distribution of the thermoelectriccoefficients (Seebeck S and Peltier Pi), and the thermoelectric figure ofmerit ZT, for large open dots at arbitrary temperature and external magneticfield, when the number of modes in the left and right leads (Nrm L<missing VAR> andNrm R) are large.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric coefficients and the figure of merit for large open quantum dots|Robert S. Whitney,Keiji Saito###
(19810, 19810)
 We calculate the full distribution of the thermoelectriccoefficients (Seebeck S and Peltier Pi), and the thermoelectric figure ofmerit ZT, for large open dots at arbitrary temperature and external magneticfield, when the number of modes in the left and right leads (Nrm L<missing VAR> andNrm R) are large.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric coefficients and the figure of merit for large open quantum dots|Robert S. Whitney,Keiji Saito###
(19946, 19946)
 They remain small, even at their maximum, butthey exhibit a type of universality at all temperatures, in which they do notdepend on the asymmetry between the left and right leads (Nrm L<missing VAR>-NrmR), even though they depend on (Nrm L+Nrm R).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric coefficients and the figure of merit for large open quantum dots|Robert S. Whitney,Keiji Saito###
(19951, 19951)
 They remain small, even at their maximum, butthey exhibit a type of universality at all temperatures, in which they do notdepend on the asymmetry between the left and right leads (Nrm L<missing VAR>-NrmR), even though they depend on (Nrm L+Nrm R).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric coefficients and the figure of merit for large open quantum dots|Robert S. Whitney,Keiji Saito###
(19970, 19970)
 They remain small, even at their maximum, butthey exhibit a type of universality at all temperatures, in which they do notdepend on the asymmetry between the left and right leads (Nrm L<missing VAR>-NrmR), even though they depend on (Nrm L+Nrm R).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric coefficients and the figure of merit for large open quantum dots|Robert S. Whitney,Keiji Saito###
(19975, 19975)
 They remain small, even at their maximum, butthey exhibit a type of universality at all temperatures, in which they do notdepend on the asymmetry between the left and right leads (Nrm L<missing VAR>-NrmR), even though they depend on (Nrm L+Nrm R).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrRuTe
###Intrinsically high thermoelectric figure of merit of half-Heusler ZrRuTe|Sonu Prasad Keshri,Amal Medhi###
(20008, 20010)
Intrinsically high thermoelectric figure of merit of half-Heusler ZrRuTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 800, 'K', 4]

ZrRuTe
###Intrinsically high thermoelectric figure of merit of half-Heusler ZrRuTe|Sonu Prasad Keshri,Amal Medhi###
(20027, 20029)
 The electronic structure and thermoelectric properties of ZrRuTe-basedHalf-Heusler compounds are studied using density functional theory (DFT) andBoltzmann transport formalism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 800, 'K', 3]

ZrRuTe
###Intrinsically high thermoelectric figure of merit of half-Heusler ZrRuTe|Sonu Prasad Keshri,Amal Medhi###
(20121, 20123)
 Based on rigorous computations of electronrelaxation time tau considering electron-phonon interactions and latticethermal conductivity kappal<missing VAR> considering phonon-phonon interactions, we findZrRuTe to be an intrinsically good thermoelectric material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 800, 'K', 2]

W
###Intrinsically high thermoelectric figure of merit of half-Heusler ZrRuTe|Sonu Prasad Keshri,Amal Medhi###
(20164, 20164)
 It has a high powerfactor of sim 2times 10-3 W/m<missing VAR>-K2 and low kappal<missing VAR>sim 10 W/m<missing VAR>-K at800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 800, 'K', 1]

K2
###Intrinsically high thermoelectric figure of merit of half-Heusler ZrRuTe|Sonu Prasad Keshri,Amal Medhi###
(20168, 20169)
 It has a high powerfactor of sim 2times 10-3 W/m<missing VAR>-K2 and low kappal<missing VAR>sim 10 W/m<missing VAR>-K at800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 800, 'K', 1]

W
###Intrinsically high thermoelectric figure of merit of half-Heusler ZrRuTe|Sonu Prasad Keshri,Amal Medhi###
(20181, 20181)
 It has a high powerfactor of sim 2times 10-3 W/m<missing VAR>-K2 and low kappal<missing VAR>sim 10 W/m<missing VAR>-K at800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 800, 'K', 1]

K
###Intrinsically high thermoelectric figure of merit of half-Heusler ZrRuTe|Sonu Prasad Keshri,Amal Medhi###
(20185, 20185)
 It has a high powerfactor of sim 2times 10-3 W/m<missing VAR>-K2 and low kappal<missing VAR>sim 10 W/m<missing VAR>-K at800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 800, 'K', 1]

K
###Intrinsically high thermoelectric figure of merit of half-Heusler ZrRuTe|Sonu Prasad Keshri,Amal Medhi###
(20192, 20192)
 It has a high powerfactor of sim 2times 10-3 W/m<missing VAR>-K2 and low kappal<missing VAR>sim 10 W/m<missing VAR>-K at800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 800, 'K', 1]

ZrRuTe
###Intrinsically high thermoelectric figure of merit of half-Heusler ZrRuTe|Sonu Prasad Keshri,Amal Medhi###
(20283, 20285)
 We have also studied the properties of thematerial as a function of doping and find the thermoelectric properties to besubstantially enhanced for p<missing VAR>-doped ZrRuTe with the ZT value raised to sim0.2 at this temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 800, 'K', 1]

Y
###A one dimensional hard-point gas as a thermoelectric engine|Jiao Wang,Giulio Casati,Tomaz Prosen,C. -H. Lai###
(20785, 20785)
Most importantly, we show that the efficiency of this engine is determined by anew parameter YT<missing VAR> which is different from the well known figure of merit ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiN
###Surface decorated silicon nanowires: a route to high-ZT thermoelectrics|Troels Markussen,Antti-Pekka Jauho,Mads Brandbyge###
(20938, 20939)
 Based on atomistic calculations of electron and phonon transport, we proposeto use surface decorated Silicon nanowires (SiNWs) for thermoelectricapplications.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiN
###Surface decorated silicon nanowires: a route to high-ZT thermoelectrics|Troels Markussen,Antti-Pekka Jauho,Mads Brandbyge###
(20984, 20985)
 Two examples of surface decorations are studied to illustrate theunderlying deas Nanotrees and alkyl functionalized SiNWs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PP
###Giant Thermoelectric Effect from Transmission Supernodes|J. P. Bergfield,M. Solis,C. A. Stafford###
(21188, 21189)
 Single-molecule junctions based on3,3-biphenyl and polyphenyl ether (PPE) are investigated in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, ',', 0],[45.0, 1, ',', 1]

B
###Huge thermoelectric effects in ferromagnet-superconductor junctions in the presence of a spin-splitting field|A. Ozaeta,P. Virtanen,F. S. Bergeret,T. T. Heikkilä###
(21398, 21398)
 The resulting thermopower exceedsk<missing VAR>B/e<missing VAR> by a large factor, and the thermoelectric figure of merit ZT can farexceed unity, leading to heat engine efficiencies close to the Carnot limit.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgAgSb
###Predicting the optimized thermoelectric performance of MgAgSb|C. Y. Sheng,H. J. Liu,D. D. Fan,L. Cheng,J. Zhang J. Wei,J. H. Liang,P. H. Jiang,J. Shi###
(21516, 21518)
Predicting the optimized thermoelectric performance of MgAgSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 1.7, 'at', 3],[172.0, 550, 'K', 3]

MgAgSb
###Predicting the optimized thermoelectric performance of MgAgSb|C. Y. Sheng,H. J. Liu,D. D. Fan,L. Cheng,J. Zhang J. Wei,J. H. Liang,P. H. Jiang,J. Shi###
(21570, 21572)
 Using first-principles method and Boltzmann theory, we provide an accurateprediction of the electronic band structure and thermoelectric transportproperties of alpha-MgAgSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 1.7, 'at', 2],[118.0, 550, 'K', 2]

MgAgSb
###Predicting the optimized thermoelectric performance of MgAgSb|C. Y. Sheng,H. J. Liu,D. D. Fan,L. Cheng,J. Zhang J. Wei,J. H. Liang,P. H. Jiang,J. Shi###
(21648, 21650)
 By fine tuning thecarrier concentration, the thermoelectric performance of alpha-MgAgSb can besignificantly optimized, which exhibits a strong temperature dependence andgives a maximum ZT value of 1.7 at 550 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1.7, 'at', 0],[40.0, 550, 'K', 0]

EuCd2As2
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(21709, 21713)
Anisotropic thermoelectric properties of EuCd2As2  An Ab-initio study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 122, 'Zintl', 1],[340.0, 1.79, 'at', 6],[341.0, 500, 'K', 6]

In
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(21725, 21725)
 In search of better thermoelectric materials, we have systematicallyinvestigated the thermoelectric properties of a 122 Zintl phase compoundEuCd2As2 using textitab-initio density functional theory andsemi-classical Boltzmann transport theory within constant relaxation timeapproximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 122, 'Zintl', 0],[328.0, 1.79, 'at', 5],[329.0, 500, 'K', 5]

EuCd2As2
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(21763, 21767)
 In search of better thermoelectric materials, we have systematicallyinvestigated the thermoelectric properties of a 122 Zintl phase compoundEuCd2As2 using textitab-initio density functional theory andsemi-classical Boltzmann transport theory within constant relaxation timeapproximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 122, 'Zintl', 0],[286.0, 1.79, 'at', 5],[287.0, 500, 'K', 5]

F
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(21834, 21834)
 Considering the ground state magnetic structure which is A-typeantiferromagnetic (A-AFM) and non-magnetic (NM) structure, we evaluated variousthermoelectric parameters such as Seebeck coefficient, electrical and thermalconductivity, power factor and figure of merit (ZT) as function temperature aswell as chemical potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 122, 'Zintl', 1],[219.0, 1.79, 'at', 4],[220.0, 500, 'K', 4]

N
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(21845, 21845)
 Considering the ground state magnetic structure which is A-typeantiferromagnetic (A-AFM) and non-magnetic (NM) structure, we evaluated variousthermoelectric parameters such as Seebeck coefficient, electrical and thermalconductivity, power factor and figure of merit (ZT) as function temperature aswell as chemical potential.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 122, 'Zintl', 1],[208.0, 1.79, 'at', 4],[209.0, 500, 'K', 4]

F
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(21955, 21955)
 Almost all thermoelectric parameters showanisotropy between xx and zz directions which is stronger in case of A-AFM<missing VAR>than in NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 122, 'Zintl', 2],[98.0, 1.79, 'at', 3],[99.0, 500, 'K', 3]

N
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(21963, 21963)
 Almost all thermoelectric parameters showanisotropy between xx and zz directions which is stronger in case of A-AFM<missing VAR>than in NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 122, 'Zintl', 2],[90.0, 1.79, 'at', 3],[91.0, 500, 'K', 3]

F
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(21972, 21972)
 Both A-AFM<missing VAR> and NM<missing VAR> phase of the compound display betterthermoelectric performance when hole doped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 122, 'Zintl', 3],[81.0, 1.79, 'at', 2],[82.0, 500, 'K', 2]

N
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(21977, 21977)
 Both A-AFM<missing VAR> and NM<missing VAR> phase of the compound display betterthermoelectric performance when hole doped.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 122, 'Zintl', 3],[76.0, 1.79, 'at', 2],[77.0, 500, 'K', 2]

F
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(22030, 22030)
 We observed high Seebeckcoefficient and low electronic thermal conductivity in A-AFM<missing VAR> phase along zzdirection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 122, 'Zintl', 4],[23.0, 1.79, 'at', 1],[24.0, 500, 'K', 1]

F
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(22061, 22061)
 The remarkably high ZT of 1.79 at 500 K in A-AFM<missing VAR> phase and ZTsim1in NM<missing VAR> phase suggest that EuCd2As2 is a viable thermoelectric materialwhen p<missing VAR>-doped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 122, 'Zintl', 5],[8.0, 1.79, 'at', 0],[7.0, 500, 'K', 0]

N
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(22076, 22076)
 The remarkably high ZT of 1.79 at 500 K in A-AFM<missing VAR> phase and ZTsim1in NM<missing VAR> phase suggest that EuCd2As2 is a viable thermoelectric materialwhen p<missing VAR>-doped.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 122, 'Zintl', 5],[23.0, 1.79, 'at', 0],[22.0, 500, 'K', 0]

EuCd2As2
###Anisotropic thermoelectric properties of EuCd$_{2}$As$_{2}$ : An Ab-initio study|Jyoti Krishna,Mukesh Sharma,T. Maitra###
(22085, 22089)
 The remarkably high ZT of 1.79 at 500 K in A-AFM<missing VAR> phase and ZTsim1in NM<missing VAR> phase suggest that EuCd2As2 is a viable thermoelectric materialwhen p<missing VAR>-doped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 122, 'Zintl', 5],[32.0, 1.79, 'at', 0],[31.0, 500, 'K', 0]

N
###Multiterminal single-molecule--graphene-nanoribbon thermoelectric devices with gate-voltage tunable figure of merit ZT|Kamal K. Saha,Troels Markussen,Kristian S. Thygesen,Branislav K. Nikolic###
(22188, 22188)
 We study thermoelectric devices where a single 18-annulene molecule isconnected to metallic zigzag graphene nanoribbons (ZGNR) via highly transparentcontacts that allow for injection of evanescent wave functions from ZGNRs intothe molecular ring.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0.5, 'at', 2],[160.0, 2.5, 'below', 2]

N
###Multiterminal single-molecule--graphene-nanoribbon thermoelectric devices with gate-voltage tunable figure of merit ZT|Kamal K. Saha,Troels Markussen,Kristian S. Thygesen,Branislav K. Nikolic###
(22221, 22221)
 We study thermoelectric devices where a single 18-annulene molecule isconnected to metallic zigzag graphene nanoribbons (ZGNR) via highly transparentcontacts that allow for injection of evanescent wave functions from ZGNRs intothe molecular ring.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 0.5, 'at', 2],[127.0, 2.5, 'below', 2]

N
###Multiterminal single-molecule--graphene-nanoribbon thermoelectric devices with gate-voltage tunable figure of merit ZT|Kamal K. Saha,Troels Markussen,Kristian S. Thygesen,Branislav K. Nikolic###
(22258, 22258)
 Their overlap generates a peak in the electronictransmission, while ZGNRs additionally suppress hole-like contributions to thethermopower.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.5, 'at', 1],[90.0, 2.5, 'below', 1]

N
###Multiterminal single-molecule--graphene-nanoribbon thermoelectric devices with gate-voltage tunable figure of merit ZT|Kamal K. Saha,Troels Markussen,Kristian S. Thygesen,Branislav K. Nikolic###
(22303, 22303)
 Thus optimized thermopower, together with suppression of phonontransport through ZGNR<missing VAR>-molecule-ZGNR<missing VAR> structure, yield the thermoelectric figureof merit ZT  0.5 at room temperature and 0.5 < ZT < 2.5 below liquid nitrogentemperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.5, 'at', 0],[45.0, 2.5, 'below', 0]

N
###Multiterminal single-molecule--graphene-nanoribbon thermoelectric devices with gate-voltage tunable figure of merit ZT|Kamal K. Saha,Troels Markussen,Kristian S. Thygesen,Branislav K. Nikolic###
(22310, 22310)
 Thus optimized thermopower, together with suppression of phonontransport through ZGNR<missing VAR>-molecule-ZGNR<missing VAR> structure, yield the thermoelectric figureof merit ZT  0.5 at room temperature and 0.5 < ZT < 2.5 below liquid nitrogentemperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.5, 'at', 0],[38.0, 2.5, 'below', 0]

N
###Multiterminal single-molecule--graphene-nanoribbon thermoelectric devices with gate-voltage tunable figure of merit ZT|Kamal K. Saha,Troels Markussen,Kristian S. Thygesen,Branislav K. Nikolic###
(22431, 22431)
 Using the nonequilibrium Green function formalism combined withdensity functional theory, recently extended to multiterminal devices, we showhow the transmission resonance can also be manipulated by the voltage appliedto a third ZGNR<missing VAR> electrode, acting as the top gate covering molecular ring, totune the value of ZT.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0.5, 'at', 1],[83.0, 2.5, 'below', 1]

B
###On the Best Bandstructure for Thermoelectric Performance|Changwook Jeong,Raseong Kim,Mark Lundstrom###
(22584, 22584)
Thermoelectric (TE) performance is evaluated using a simple tight binding (T<missing VAR>B)model for electron dispersion and three different scattering models 1) aconstant scattering time, 2) a constant mean-free-path, and 3) a scatteringrate proportional to the density-of-states.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###First-principles study of the thermoelectric properties of strained graphene nanoribbons|Pei Shan Emmeline Yeo,Michael B. Sullivan,Kian Ping Loh,Chee Kwan Gan###
(22864, 22864)
 We study the transport properties, in particular, the thermoelectric figureof merit ZT of armchair graphene nanoribbons, AGNR-N (for N4-12, with widthsranging from 3.7 to 13.6AA) through strain engineering, where N is the numberof carbon dimer lines across the AGNR width.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, -12, ',', 0],[19.0, 3.7, 'to', 0],[157.0, 2, ',', 2]

N4
###First-principles study of the thermoelectric properties of strained graphene nanoribbons|Pei Shan Emmeline Yeo,Michael B. Sullivan,Kian Ping Loh,Chee Kwan Gan###
(22869, 22870)
 We study the transport properties, in particular, the thermoelectric figureof merit ZT of armchair graphene nanoribbons, AGNR-N (for N4-12, with widthsranging from 3.7 to 13.6AA) through strain engineering, where N is the numberof carbon dimer lines across the AGNR width.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, -12, ',', 0],[13.0, 3.7, 'to', 0],[151.0, 2, ',', 2]

N
###First-principles study of the thermoelectric properties of strained graphene nanoribbons|Pei Shan Emmeline Yeo,Michael B. Sullivan,Kian Ping Loh,Chee Kwan Gan###
(22899, 22899)
 We study the transport properties, in particular, the thermoelectric figureof merit ZT of armchair graphene nanoribbons, AGNR-N (for N4-12, with widthsranging from 3.7 to 13.6AA) through strain engineering, where N is the numberof carbon dimer lines across the AGNR width.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, -12, ',', 0],[16.0, 3.7, 'to', 0],[122.0, 2, ',', 2]

N
###First-principles study of the thermoelectric properties of strained graphene nanoribbons|Pei Shan Emmeline Yeo,Michael B. Sullivan,Kian Ping Loh,Chee Kwan Gan###
(22950, 22950)
 We find that the tensile strainapplied to AGNR-N changes the transport properties by modifying theelectronic structures and phonon dispersion relations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, -12, ',', 1],[67.0, 3.7, 'to', 1],[71.0, 2, ',', 1]

N
###First-principles study of the thermoelectric properties of strained graphene nanoribbons|Pei Shan Emmeline Yeo,Michael B. Sullivan,Kian Ping Loh,Chee Kwan Gan###
(23005, 23005)
 The tensile strainincreases the ZT value of the AGNR-N families with N3p<missing VAR> and N3p+2, where p<missing VAR>is an integer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, -12, ',', 2],[122.0, 3.7, 'to', 2],[16.0, 2, ',', 0]

N3
###First-principles study of the thermoelectric properties of strained graphene nanoribbons|Pei Shan Emmeline Yeo,Michael B. Sullivan,Kian Ping Loh,Chee Kwan Gan###
(23011, 23012)
 The tensile strainincreases the ZT value of the AGNR-N families with N3p<missing VAR> and N3p+2, where p<missing VAR>is an integer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, -12, ',', 2],[128.0, 3.7, 'to', 2],[9.0, 2, ',', 0]

N3
###First-principles study of the thermoelectric properties of strained graphene nanoribbons|Pei Shan Emmeline Yeo,Michael B. Sullivan,Kian Ping Loh,Chee Kwan Gan###
(23017, 23018)
 The tensile strainincreases the ZT value of the AGNR-N families with N3p<missing VAR> and N3p+2, where p<missing VAR>is an integer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, -12, ',', 2],[134.0, 3.7, 'to', 2],[3.0, 2, ',', 0]

N
###First-principles study of the thermoelectric properties of strained graphene nanoribbons|Pei Shan Emmeline Yeo,Michael B. Sullivan,Kian Ping Loh,Chee Kwan Gan###
(23081, 23081)
 Our analysis based on accurate density-functional theorycalculations suggests a possible route to increase the ZT values of AGNR-Nfor potential thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, -12, ',', 3],[198.0, 3.7, 'to', 3],[60.0, 2, ',', 1]

SnSe
###Optimizing thermoelectric performances of low-temperature SnSe compounds by electronic structure design|Aijun Hong,Lin Li,Haixia Zhu,Zhibo Yan,Junming Liu,Zhifeng Ren###
(23113, 23114)
Optimizing thermoelectric performances of low-temperature SnSe compounds by electronic structure design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2.62, 'at', 1],[50.0, 923, 'K', 1],[67.0, 750, 'K', 1],[191.0, 675, 'K', 2]

SnSe
###Optimizing thermoelectric performances of low-temperature SnSe compounds by electronic structure design|Aijun Hong,Lin Li,Haixia Zhu,Zhibo Yan,Junming Liu,Zhifeng Ren###
(23129, 23130)
 Recently SnSe compound was reported to have a peak thermoelectric figure-5of-merit (ZT) of 2.62 at 923 K, but the ZT values at temperatures below 750 Kare relatively low.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2.62, 'at', 0],[34.0, 923, 'K', 0],[51.0, 750, 'K', 0],[175.0, 675, 'K', 1]

In
###Optimizing thermoelectric performances of low-temperature SnSe compounds by electronic structure design|Aijun Hong,Lin Li,Haixia Zhu,Zhibo Yan,Junming Liu,Zhifeng Ren###
(23191, 23191)
 In this work, the electronic structures of SnSe arecalculated using the density functional theory, and the electro- andthermo-transport properties upon varying chemical potential (or carrierdensity) are evaluated by the semi-classic Boltzmann transport theory, showingthat the calculated ZT values along the a10 and c<missing VAR>-axes below 675 K are inagreement with reported values, but that along the b<missing VAR>-axis can be as high as2.57 by optimizing the carrier concentration to 3.61019 cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2.62, 'at', 1],[27.0, 923, 'K', 1],[10.0, 750, 'K', 1],[114.0, 675, 'K', 0]

SnSe
###Optimizing thermoelectric performances of low-temperature SnSe compounds by electronic structure design|Aijun Hong,Lin Li,Haixia Zhu,Zhibo Yan,Junming Liu,Zhifeng Ren###
(23206, 23207)
 In this work, the electronic structures of SnSe arecalculated using the density functional theory, and the electro- andthermo-transport properties upon varying chemical potential (or carrierdensity) are evaluated by the semi-classic Boltzmann transport theory, showingthat the calculated ZT values along the a10 and c<missing VAR>-axes below 675 K are inagreement with reported values, but that along the b<missing VAR>-axis can be as high as2.57 by optimizing the carrier concentration to 3.61019 cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2.62, 'at', 1],[42.0, 923, 'K', 1],[25.0, 750, 'K', 1],[98.0, 675, 'K', 0]

H
###A spincaloritronic battery|Xiao-Qin Yu,Zhen-Gang Zhu,Gang Su,A. -P. Jauho###
(23459, 23459)
The H-shaped device is based on a combination of transverse topological effectsinvolving the spin the inverse spin Hall effect and the spin Nernst effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24102, 24102)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 155, 'K', 2],[201.0, 180, 'K', 2],[248.0, 78, 'K', 2]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24104, 24104)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 155, 'K', 2],[199.0, 180, 'K', 2],[246.0, 78, 'K', 2]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24106, 24106)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 155, 'K', 2],[197.0, 180, 'K', 2],[244.0, 78, 'K', 2]

F
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24116, 24116)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 155, 'K', 2],[187.0, 180, 'K', 2],[234.0, 78, 'K', 2]

(AuI2)1
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24119, 24124)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 155, 'K', 2],[179.0, 180, 'K', 2],[226.0, 78, 'K', 2]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24137, 24137)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 155, 'K', 2],[166.0, 180, 'K', 2],[213.0, 78, 'K', 2]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24139, 24139)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 155, 'K', 2],[164.0, 180, 'K', 2],[211.0, 78, 'K', 2]

F
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24149, 24149)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 155, 'K', 2],[154.0, 180, 'K', 2],[201.0, 78, 'K', 2]

(AuI2)1
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24152, 24157)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 155, 'K', 2],[146.0, 180, 'K', 2],[193.0, 78, 'K', 2]

P
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24167, 24167)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 155, 'K', 2],[136.0, 180, 'K', 2],[183.0, 78, 'K', 2]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24169, 24169)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 155, 'K', 2],[134.0, 180, 'K', 2],[181.0, 78, 'K', 2]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24171, 24171)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 155, 'K', 2],[132.0, 180, 'K', 2],[179.0, 78, 'K', 2]

F
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24181, 24181)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 155, 'K', 2],[122.0, 180, 'K', 2],[169.0, 78, 'K', 2]

(AuI2)1
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24184, 24189)
 Dimensionless thermoelectric figure of merit ZT is investigated fortwo-dimensional organic conductors tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>,tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> andtau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> (y<missing VAR> le 0.875), respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 155, 'K', 2],[114.0, 180, 'K', 2],[161.0, 78, 'K', 2]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24268, 24268)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 155, 'K', 0],[35.0, 180, 'K', 0],[82.0, 78, 'K', 0]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24270, 24270)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 155, 'K', 0],[33.0, 180, 'K', 0],[80.0, 78, 'K', 0]

F
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24280, 24280)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 155, 'K', 0],[23.0, 180, 'K', 0],[70.0, 78, 'K', 0]

(AuI2)1
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24283, 24288)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 155, 'K', 0],[15.0, 180, 'K', 0],[62.0, 78, 'K', 0]

O
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24312, 24312)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 155, 'K', 0],[9.0, 180, 'K', 0],[38.0, 78, 'K', 0]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24314, 24314)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 155, 'K', 0],[11.0, 180, 'K', 0],[36.0, 78, 'K', 0]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24316, 24316)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 155, 'K', 0],[13.0, 180, 'K', 0],[34.0, 78, 'K', 0]

F
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24326, 24326)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 155, 'K', 0],[23.0, 180, 'K', 0],[24.0, 78, 'K', 0]

(AuI2)1
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24329, 24334)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 155, 'K', 0],[26.0, 180, 'K', 0],[16.0, 78, 'K', 0]

P
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24357, 24357)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 155, 'K', 0],[54.0, 180, 'K', 0],[7.0, 78, 'K', 0]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24359, 24359)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 155, 'K', 0],[56.0, 180, 'K', 0],[9.0, 78, 'K', 0]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24361, 24361)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 155, 'K', 0],[58.0, 180, 'K', 0],[11.0, 78, 'K', 0]

F
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24371, 24371)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 155, 'K', 0],[68.0, 180, 'K', 0],[21.0, 78, 'K', 0]

(AuI2)1
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24374, 24379)
 The largest ZT is 2.7 times 10-2at 155 K for tau-(EDT-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, 1.5 times 10-2at 180 K for tau-(EDO-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR> and 5.4 times10-3 at 78 K for tau-(P-S,S-DMEDT-TTF)2(AuI2)1+y<missing VAR>, respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 155, 'K', 0],[71.0, 180, 'K', 0],[24.0, 78, 'K', 0]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24413, 24413)
Substitution of the donor molecules fixing the counter anion revealedEDT-S,S-DMEDT-TTF is the best of the three donors to obtain larger ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 155, 'K', 1],[110.0, 180, 'K', 1],[63.0, 78, 'K', 1]

S
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24415, 24415)
Substitution of the donor molecules fixing the counter anion revealedEDT-S,S-DMEDT-TTF is the best of the three donors to obtain larger ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 155, 'K', 1],[112.0, 180, 'K', 1],[65.0, 78, 'K', 1]

F
###Thermoelectric figure of merit of tau-type conductors of several donors|H. Yoshino,H. Aizawa,K. Kuroki,G. C. Anyfantis,G. C. Papavassiliou,K. Murata###
(24425, 24425)
Substitution of the donor molecules fixing the counter anion revealedEDT-S,S-DMEDT-TTF is the best of the three donors to obtain larger ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 155, 'K', 1],[122.0, 180, 'K', 1],[75.0, 78, 'K', 1]

Ds
###Enhancement of the thermoelectric figure of merit in a quantum dot due to the Coulomb blockade effect|Jie Liu,Qing-feng Sun,X. C. Xie###
(24739, 24739)
 Thus, it is more likely to find a high efficientthermoelectric Q<missing VAR>Ds with large Coulomb interaction.
EXCEPTION 3: IndexError for Ds
Abstract does not contain any numbers.

Bi2Te3
###Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime|Jinghua Liang,Long Cheng,Jie Zhang,Huijun Liu,Zhenyu Zhang###
(24805, 24808)
Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime|Jinghua Liang,Long Cheng,Jie Zhang,Huijun Liu,Zhenyu Zhang###
(24875, 24878)
 Using first-principles calculations and Boltzmann theory, we explore thefeasibility to maximize the thermoelectric figure of merit (ZT) of topologicalinsulator Bi2Te3 films in the few-quintuple layer regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime|Jinghua Liang,Long Cheng,Jie Zhang,Huijun Liu,Zhenyu Zhang###
(24970, 24970)
 In particular, when the system crossesinto the topologically non-trivial regime upon increasing the film thickness,the much longer surface relaxation time associated with the robust nature ofthe topological surface states results in a maximal ZT value, which can befurther optimized to 2.0 under physically realistic conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime|Jinghua Liang,Long Cheng,Jie Zhang,Huijun Liu,Zhenyu Zhang###
(25119, 25122)
 We also revealthe appealing potential of bridging the long-standing ZT asymmetry of p<missing VAR>- andn<missing VAR>-type Bi2Te3 systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###Theory of thermoelectricity in Mg$_3$Sb$_2$ with an energy- and temperature-dependent relaxation time|Roberta Farris,Maria Barbara Maccioni,Alessio Filippetti,Vincenzo Fiorentini###
(25143, 25146)
Theory of thermoelectricity in Mg3Sb2 with an energy- and temperature-dependent relaxation time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 700, 'K', 4],[243.0, 700, 'K', 4]

Mg3Sb2
###Theory of thermoelectricity in Mg$_3$Sb$_2$ with an energy- and temperature-dependent relaxation time|Roberta Farris,Maria Barbara Maccioni,Alessio Filippetti,Vincenzo Fiorentini###
(25200, 25203)
 We study the electronic transport coefficients and the thermoelectric figureof merit ZT in n<missing VAR>-doped Mg3Sb2 based on density-functional electronicstructure and Bloch-Boltzmann transport theory with an energy- andtemperature-dependent relaxation time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 700, 'K', 3],[186.0, 700, 'K', 3]

At
###Theory of thermoelectricity in Mg$_3$Sb$_2$ with an energy- and temperature-dependent relaxation time|Roberta Farris,Maria Barbara Maccioni,Alessio Filippetti,Vincenzo Fiorentini###
(25421, 25421)
 At this doping, ZT>1 for T<missing VAR>>500 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 700, 'K', 1],[32.0, 700, 'K', 1]

K
###Theory of thermoelectricity in Mg$_3$Sb$_2$ with an energy- and temperature-dependent relaxation time|Roberta Farris,Maria Barbara Maccioni,Alessio Filippetti,Vincenzo Fiorentini###
(25439, 25439)
 At this doping, ZT>1 for T<missing VAR>>500 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 700, 'K', 1],[50.0, 700, 'K', 1]

U
###The Limits of Thermoelectric Performance with a Bounded Transport Distribution|Jesse Maassen###
(25520, 25520)
 U.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 93, ',', 3]

S
###The Limits of Thermoelectric Performance with a Bounded Transport Distribution|Jesse Maassen###
(25522, 25522)
S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 93, ',', 2]

Ds
###The Limits of Thermoelectric Performance with a Bounded Transport Distribution|Jesse Maassen###
(25574, 25574)
 Materials, however,have T<missing VAR>Ds that appear to always be finite and non-diverging.
EXCEPTION 3: IndexError for Ds
Ds
[47.0, 93, ',', 1]

(HH)
###Conventional Half-Heusler Alloys Advance State-of-the-Art Thermoelectric Properties|Mousumi Mitra,Allen Benton,Md Sabbir Akhanda,Jie Qi,Mona Zebarjadi,David J. Singh,S. Joseph Poon###
(25840, 25843)
 Half-Heusler (HH) phases have garnered much attention as thermally stable andnon-toxic thermoelectric materials for power conversion.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1.0, 'Recent', 2],[245.0, 0.8, ',', 4],[257.0, 1, 'at', 4],[288.0, 1.5, 'at', 5],[289.0, 980, 'K', 5],[316.0, 65, '%', 6],[342.0, 13, '%', 6],[495.0, 7, 'to', 8],[496.0, 10, 'me', 8]

Hf
###Conventional Half-Heusler Alloys Advance State-of-the-Art Thermoelectric Properties|Mousumi Mitra,Allen Benton,Md Sabbir Akhanda,Jie Qi,Mona Zebarjadi,David J. Singh,S. Joseph Poon###
(25894, 25894)
 The most studiedalloys to date utilize Hf, Zr, and Ti as the base components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 1.0, 'Recent', 1],[194.0, 0.8, ',', 3],[206.0, 1, 'at', 3],[237.0, 1.5, 'at', 4],[238.0, 980, 'K', 4],[265.0, 65, '%', 5],[291.0, 13, '%', 5],[444.0, 7, 'to', 7],[445.0, 10, 'me', 7]

Zr
###Conventional Half-Heusler Alloys Advance State-of-the-Art Thermoelectric Properties|Mousumi Mitra,Allen Benton,Md Sabbir Akhanda,Jie Qi,Mona Zebarjadi,David J. Singh,S. Joseph Poon###
(25897, 25897)
 The most studiedalloys to date utilize Hf, Zr, and Ti as the base components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1.0, 'Recent', 1],[191.0, 0.8, ',', 3],[203.0, 1, 'at', 3],[234.0, 1.5, 'at', 4],[235.0, 980, 'K', 4],[262.0, 65, '%', 5],[288.0, 13, '%', 5],[441.0, 7, 'to', 7],[442.0, 10, 'me', 7]

Ti
###Conventional Half-Heusler Alloys Advance State-of-the-Art Thermoelectric Properties|Mousumi Mitra,Allen Benton,Md Sabbir Akhanda,Jie Qi,Mona Zebarjadi,David J. Singh,S. Joseph Poon###
(25902, 25902)
 The most studiedalloys to date utilize Hf, Zr, and Ti as the base components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 1.0, 'Recent', 1],[186.0, 0.8, ',', 3],[198.0, 1, 'at', 3],[229.0, 1.5, 'at', 4],[230.0, 980, 'K', 4],[257.0, 65, '%', 5],[283.0, 13, '%', 5],[436.0, 7, 'to', 7],[437.0, 10, 'me', 7]

HH
###Conventional Half-Heusler Alloys Advance State-of-the-Art Thermoelectric Properties|Mousumi Mitra,Allen Benton,Md Sabbir Akhanda,Jie Qi,Mona Zebarjadi,David J. Singh,S. Joseph Poon###
(25957, 25958)
 These alloys canachieve a moderate dimensionless figure of merit, ZT, near 1. Recent studieshave advanced the thermoelectric performance of HH alloys by employingnanostructures and novel compositions to achieve larger ZT, reaching as high as1.5.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1.0, 'Recent', 0],[130.0, 0.8, ',', 2],[142.0, 1, 'at', 2],[173.0, 1.5, 'at', 3],[174.0, 980, 'K', 3],[201.0, 65, '%', 4],[227.0, 13, '%', 4],[380.0, 7, 'to', 6],[381.0, 10, 'me', 6]

HfZr
###Conventional Half-Heusler Alloys Advance State-of-the-Art Thermoelectric Properties|Mousumi Mitra,Allen Benton,Md Sabbir Akhanda,Jie Qi,Mona Zebarjadi,David J. Singh,S. Joseph Poon###
(26021, 26022)
 Herein, we report that traditional alloying techniques applied to theconventional HfZr-based half-Heusler alloys can also lead to exceptional ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.0, 'Recent', 1],[66.0, 0.8, ',', 1],[78.0, 1, 'at', 1],[109.0, 1.5, 'at', 2],[110.0, 980, 'K', 2],[137.0, 65, '%', 3],[163.0, 13, '%', 3],[316.0, 7, 'to', 5],[317.0, 10, 'me', 5]

Hf0.3Zr0.7CoSn0.3Sb0.7
###Conventional Half-Heusler Alloys Advance State-of-the-Art Thermoelectric Properties|Mousumi Mitra,Allen Benton,Md Sabbir Akhanda,Jie Qi,Mona Zebarjadi,David J. Singh,S. Joseph Poon###
(26064, 26072)
Specifically, we present the well-studied p<missing VAR>-type Hf0.3Zr0.7CoSn0.3Sb0.7,previously reported to have a ZT0.8, resonantly doped with less than 1 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.2333333333333333,0,0,0,0,0,0,0,0,0,0.09999999999999999,0.2333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 1.0, 'Recent', 2],[16.0, 0.8, ',', 0],[28.0, 1, 'at', 0],[59.0, 1.5, 'at', 1],[60.0, 980, 'K', 1],[87.0, 65, '%', 2],[113.0, 13, '%', 2],[266.0, 7, 'to', 4],[267.0, 10, 'me', 4]

Al
###Conventional Half-Heusler Alloys Advance State-of-the-Art Thermoelectric Properties|Mousumi Mitra,Allen Benton,Md Sabbir Akhanda,Jie Qi,Mona Zebarjadi,David J. Singh,S. Joseph Poon###
(26108, 26108)
 %metallic Al on the Sn/Sb site, touting a remarkable ZT near 1.5 at 980 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1.0, 'Recent', 3],[20.0, 0.8, ',', 1],[8.0, 1, 'at', 1],[23.0, 1.5, 'at', 0],[24.0, 980, 'K', 0],[51.0, 65, '%', 1],[77.0, 13, '%', 1],[230.0, 7, 'to', 3],[231.0, 10, 'me', 3]

Sn/Sb
###Conventional Half-Heusler Alloys Advance State-of-the-Art Thermoelectric Properties|Mousumi Mitra,Allen Benton,Md Sabbir Akhanda,Jie Qi,Mona Zebarjadi,David J. Singh,S. Joseph Poon###
(26114, 26116)
 %metallic Al on the Sn/Sb site, touting a remarkable ZT near 1.5 at 980 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[174.0, 1.0, 'Recent', 3],[26.0, 0.8, ',', 1],[14.0, 1, 'at', 1],[15.0, 1.5, 'at', 0],[16.0, 980, 'K', 0],[43.0, 65, '%', 1],[69.0, 13, '%', 1],[222.0, 7, 'to', 3],[223.0, 10, 'me', 3]

(Te)
###Thermoelectric Performance of 2D Tellurium with Accumulation Contacts|Gang Qiu,Shouyuan Huang,Mauricio Segovia,Prabhu K. Venuthurumilli,Yixiu Wang,Wenzhuo Wu,Xianfan Xu,Peide D. Ye###
(26511, 26513)
 Tellurium (Te) is an intrinsically p<missing VAR>-type doped narrow bandgap semiconductorwith excellent electrical conductivity and low thermal conductivity.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'D', 1],[313.0, 2, 'D', 3],[346.0, 2, 'D', 4]

Te
###Thermoelectric Performance of 2D Tellurium with Accumulation Contacts|Gang Qiu,Shouyuan Huang,Mauricio Segovia,Prabhu K. Venuthurumilli,Yixiu Wang,Wenzhuo Wu,Xianfan Xu,Peide D. Ye###
(26556, 26556)
 Bulktrigonal Te has been theoretically predicted and experimentally demonstrated tobe an outstanding thermoelectric material with high value of thermoelectricfigure-of-merit ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2, 'D', 2],[270.0, 2, 'D', 2],[303.0, 2, 'D', 3]

In
###Thermoelectric Performance of 2D Tellurium with Accumulation Contacts|Gang Qiu,Shouyuan Huang,Mauricio Segovia,Prabhu K. Venuthurumilli,Yixiu Wang,Wenzhuo Wu,Xianfan Xu,Peide D. Ye###
(26606, 26606)
 In view of the recent progress in developing synthesisroute of two-dimensional (2D) tellurium thin films as well as the growing trendof exploiting nanostructures as thermoelectric devices, here for the first timewe report excellent thermoelectric performance of tellurium nanofilms, withroom temperature power factor of 31.7 muWcm-1K-2 and ZT value of 0.63.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2, 'D', 3],[220.0, 2, 'D', 1],[253.0, 2, 'D', 2]

K
###Thermoelectric Performance of 2D Tellurium with Accumulation Contacts|Gang Qiu,Shouyuan Huang,Mauricio Segovia,Prabhu K. Venuthurumilli,Yixiu Wang,Wenzhuo Wu,Xianfan Xu,Peide D. Ye###
(26717, 26717)
 In view of the recent progress in developing synthesisroute of two-dimensional (2D) tellurium thin films as well as the growing trendof exploiting nanostructures as thermoelectric devices, here for the first timewe report excellent thermoelectric performance of tellurium nanofilms, withroom temperature power factor of 31.7 muWcm-1K-2 and ZT value of 0.63.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 2, 'D', 3],[109.0, 2, 'D', 1],[142.0, 2, 'D', 2]

Te
###Thermoelectric Performance of 2D Tellurium with Accumulation Contacts|Gang Qiu,Shouyuan Huang,Mauricio Segovia,Prabhu K. Venuthurumilli,Yixiu Wang,Wenzhuo Wu,Xianfan Xu,Peide D. Ye###
(26828, 26828)
 Tofurther enhance the efficiency of harvesting thermoelectric power in nanofilmdevices, thermoelectrical current mapping was performed with a laser as aheating source, and we found high work function metals such as palladium canform rare accumulation-type metal-to-semiconductor contacts to 2D Te, whichallows thermoelectrically generated carriers to be collected more efficiently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 2, 'D', 4],[2.0, 2, 'D', 0],[31.0, 2, 'D', 1]

Te
###Thermoelectric Performance of 2D Tellurium with Accumulation Contacts|Gang Qiu,Shouyuan Huang,Mauricio Segovia,Prabhu K. Venuthurumilli,Yixiu Wang,Wenzhuo Wu,Xianfan Xu,Peide D. Ye###
(26861, 26861)
High-performance thermoelectric 2D Te devices have broad applications as energyharvesting devices or nanoscale Peltier coolers in microsystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 2, 'D', 5],[35.0, 2, 'D', 1],[2.0, 2, 'D', 0]

Mg3Sb2
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(26923, 26926)
Rapid one-step synthesis and compaction of high-performance n<missing VAR>-type Mg3Sb2 thermoelectrics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(26935, 26938)
 n<missing VAR>-type Mg3Sb2-based compounds are emerging as a promising class of low-costthermoelectric materials due to their extraordinary performance at low andintermediate temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27017, 27020)
 However, so far high thermoelectric performance hasmerely been reported in n<missing VAR>-type Mg3Sb2-Mg3Bi2 alloys with a large amount of Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Bi2
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27022, 27025)
 However, so far high thermoelectric performance hasmerely been reported in n<missing VAR>-type Mg3Sb2-Mg3Bi2 alloys with a large amount of Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27039, 27039)
 However, so far high thermoelectric performance hasmerely been reported in n<missing VAR>-type Mg3Sb2-Mg3Bi2 alloys with a large amount of Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27058, 27061)
Moreover, current synthesis methods of n<missing VAR>-type Mg3Sb2 bulk thermoelectricsinvolve multi-step processes that are time- and energy-consuming.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27115, 27118)
 Here wereport a fast and straightforward approach to fabricate n<missing VAR>-type Mg3Sb2thermoelectrics using spark plasma sintering, which combines the synthesis andcompaction in one step.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27191, 27191)
 Using this method, we achieve a high thermoelectricfigure of merit zT of 0.4-1.5 at 300-725 K in n<missing VAR>-type (Sc, Te)-doped Mg3Sb2without alloying with Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sc
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27200, 27200)
 Using this method, we achieve a high thermoelectricfigure of merit zT of 0.4-1.5 at 300-725 K in n<missing VAR>-type (Sc, Te)-doped Mg3Sb2without alloying with Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27203, 27203)
 Using this method, we achieve a high thermoelectricfigure of merit zT of 0.4-1.5 at 300-725 K in n<missing VAR>-type (Sc, Te)-doped Mg3Sb2without alloying with Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27208, 27211)
 Using this method, we achieve a high thermoelectricfigure of merit zT of 0.4-1.5 at 300-725 K in n<missing VAR>-type (Sc, Te)-doped Mg3Sb2without alloying with Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Bi2
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27220, 27223)
 Using this method, we achieve a high thermoelectricfigure of merit zT of 0.4-1.5 at 300-725 K in n<missing VAR>-type (Sc, Te)-doped Mg3Sb2without alloying with Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27226, 27226)
 In comparison with the currently reportedsynthesis methods, the complexity, process time, and cost of the new method aresignificantly reduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###Rapid one-step synthesis and compaction of high-performance n-type Mg3Sb2 thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(27310, 27313)
 This work demonstrates a simple, low-cost route for thepotential large-scale production of n<missing VAR>-type Mg3Sb2 thermoelectrics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(MnTe)
###Understanding and Designing the Spin-Driven Thermoelectrics|Md Mobarak Hossain Polash,Duncan Moseley,Junjie Zhang,Raphael P. Hermann,Daryoosh Vashaee###
(27520, 27523)
 Theclassical antiferromagnetic semiconductor manganese telluride (MnTe) is chosenas the case study due to its significant spin-mediated thermoelectricproperties.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films|Jayakanth Ravichandran,Wolter Siemons,Dong-wook Oh,Justin T. Kardel,Arvind Chari,Herman Heijmerikx,Matthew L. Scullin,Arun Majumdar,Ramamoorthy Ramesh,David G. Cahill###
(27696, 27699)
High temperature thermoelectric response of double-doped SrTiO3 epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 300, 'K', 3],[119.0, 900, 'K', 3],[204.0, 0.28, 'at', 5]

SrTiO3
###High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films|Jayakanth Ravichandran,Wolter Siemons,Dong-wook Oh,Justin T. Kardel,Arvind Chari,Herman Heijmerikx,Matthew L. Scullin,Arun Majumdar,Ramamoorthy Ramesh,David G. Cahill###
(27706, 27709)
 SrTiO3 is a promising n<missing VAR>-type oxide semiconductor for thermoelectricenergy conversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 300, 'K', 2],[109.0, 900, 'K', 2],[194.0, 0.28, 'at', 4]

SrTiO3
###High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films|Jayakanth Ravichandran,Wolter Siemons,Dong-wook Oh,Justin T. Kardel,Arvind Chari,Herman Heijmerikx,Matthew L. Scullin,Arun Majumdar,Ramamoorthy Ramesh,David G. Cahill###
(27743, 27746)
 Epitaxial thin films of SrTiO3 doped with both La andoxygen vacancies have been synthesized by pulsed laser deposition (PLD).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 300, 'K', 1],[72.0, 900, 'K', 1],[157.0, 0.28, 'at', 3]

La
###High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films|Jayakanth Ravichandran,Wolter Siemons,Dong-wook Oh,Justin T. Kardel,Arvind Chari,Herman Heijmerikx,Matthew L. Scullin,Arun Majumdar,Ramamoorthy Ramesh,David G. Cahill###
(27754, 27754)
 Epitaxial thin films of SrTiO3 doped with both La andoxygen vacancies have been synthesized by pulsed laser deposition (PLD).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 300, 'K', 1],[64.0, 900, 'K', 1],[149.0, 0.28, 'at', 3]

P
###High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films|Jayakanth Ravichandran,Wolter Siemons,Dong-wook Oh,Justin T. Kardel,Arvind Chari,Herman Heijmerikx,Matthew L. Scullin,Arun Majumdar,Ramamoorthy Ramesh,David G. Cahill###
(27778, 27778)
 Epitaxial thin films of SrTiO3 doped with both La andoxygen vacancies have been synthesized by pulsed laser deposition (PLD).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 300, 'K', 1],[40.0, 900, 'K', 1],[125.0, 0.28, 'at', 3]

La
###High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films|Jayakanth Ravichandran,Wolter Siemons,Dong-wook Oh,Justin T. Kardel,Arvind Chari,Herman Heijmerikx,Matthew L. Scullin,Arun Majumdar,Ramamoorthy Ramesh,David G. Cahill###
(27861, 27861)
 Thermopower values of double-doped films are comparable toprevious studies of La doped single crystals at similar carrier concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 300, 'K', 1],[43.0, 900, 'K', 1],[42.0, 0.28, 'at', 1]

K
###High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films|Jayakanth Ravichandran,Wolter Siemons,Dong-wook Oh,Justin T. Kardel,Arvind Chari,Herman Heijmerikx,Matthew L. Scullin,Arun Majumdar,Ramamoorthy Ramesh,David G. Cahill###
(27908, 27908)
The highest thermoelectric figure of merit (ZT) was measured to be 0.28 at873 K at a carrier concentration of 2.5times1021 cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 300, 'K', 2],[90.0, 900, 'K', 2],[5.0, 0.28, 'at', 0]

Bi4O4S3
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(27954, 27959)
Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 0.03, 'at', 4],[212.0, 300, 'K', 4]

Bi4O4S3
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(27976, 27981)
 Polycrystalline sample of the new layered superconductor Bi4O4S3 issuccessfully synthesized by solid-state reaction method by using Bi, S andBi2O3 powders with one step reaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 0.03, 'at', 3],[190.0, 300, 'K', 3]

Bi
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(28004, 28004)
 Polycrystalline sample of the new layered superconductor Bi4O4S3 issuccessfully synthesized by solid-state reaction method by using Bi, S andBi2O3 powders with one step reaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 0.03, 'at', 3],[167.0, 300, 'K', 3]

S
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(28007, 28007)
 Polycrystalline sample of the new layered superconductor Bi4O4S3 issuccessfully synthesized by solid-state reaction method by using Bi, S andBi2O3 powders with one step reaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0.03, 'at', 3],[164.0, 300, 'K', 3]

Bi2O3
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(28012, 28015)
 Polycrystalline sample of the new layered superconductor Bi4O4S3 issuccessfully synthesized by solid-state reaction method by using Bi, S andBi2O3 powders with one step reaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 0.03, 'at', 3],[156.0, 300, 'K', 3]

K
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(28041, 28041)
 The superconducting transitiontemperature (Tconset4.5 K), the zero resistance transition temperature(Tc04.07 K) and the diamagnetic transition temperature (4.02 K at H10 Oe)were confirmed by electrical transport and magnetic measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0.03, 'at', 2],[130.0, 300, 'K', 2]

Tc04.07
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(28057, 28059)
 The superconducting transitiontemperature (Tconset4.5 K), the zero resistance transition temperature(Tc04.07 K) and the diamagnetic transition temperature (4.02 K at H10 Oe)were confirmed by electrical transport and magnetic measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 0.03, 'at', 2],[112.0, 300, 'K', 2]

K
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(28061, 28061)
 The superconducting transitiontemperature (Tconset4.5 K), the zero resistance transition temperature(Tc04.07 K) and the diamagnetic transition temperature (4.02 K at H10 Oe)were confirmed by electrical transport and magnetic measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.03, 'at', 2],[110.0, 300, 'K', 2]

K
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(28077, 28077)
 The superconducting transitiontemperature (Tconset4.5 K), the zero resistance transition temperature(Tc04.07 K) and the diamagnetic transition temperature (4.02 K at H10 Oe)were confirmed by electrical transport and magnetic measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.03, 'at', 2],[94.0, 300, 'K', 2]

H10
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(28081, 28082)
 The superconducting transitiontemperature (Tconset4.5 K), the zero resistance transition temperature(Tc04.07 K) and the diamagnetic transition temperature (4.02 K at H10 Oe)were confirmed by electrical transport and magnetic measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0.03, 'at', 2],[89.0, 300, 'K', 2]

II
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(28121, 28122)
 Also, ourresults indicate a typical type II-superconductor behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 0.03, 'at', 1],[49.0, 300, 'K', 1]

In
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(28129, 28129)
 In addition, alarge thermoelectric effect was observed with a dimensionless thermoelectricfigure of merit (ZT) of about 0.03 at 300K, indicating Bi4O4S3 can be apotential thermoelectric material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0.03, 'at', 0],[42.0, 300, 'K', 0]

Bi4O4S3
###Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3|S. G. Tan,L. J. Li,Y. Liu,P. Tong,B. C. Zhao,W. J. Lu,Y. P. Sun###
(28176, 28181)
 In addition, alarge thermoelectric effect was observed with a dimensionless thermoelectricfigure of merit (ZT) of about 0.03 at 300K, indicating Bi4O4S3 can be apotential thermoelectric material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.03, 'at', 0],[5.0, 300, 'K', 0]

PbTiO3
###Estimates of the thermal conductivity and the thermoelectric properties of PbTiO$_3$ from first principles|Anindya Roy###
(28225, 28228)
Estimates of the thermal conductivity and the thermoelectric properties of PbTiO3 from first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 1, 'for', 3]

PbTiO3
###Estimates of the thermal conductivity and the thermoelectric properties of PbTiO$_3$ from first principles|Anindya Roy###
(28254, 28257)
 The lattice thermal conductivity (kapparm L) of PbTiO3 (PT<missing VAR>O) isestimated using a combination of em ab initio calculations and semiclassicalBoltzmann transport equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 1, 'for', 2]

P
###Estimates of the thermal conductivity and the thermoelectric properties of PbTiO$_3$ from first principles|Anindya Roy###
(28260, 28260)
 The lattice thermal conductivity (kapparm L) of PbTiO3 (PT<missing VAR>O) isestimated using a combination of em ab initio calculations and semiclassicalBoltzmann transport equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 1, 'for', 2]

O
###Estimates of the thermal conductivity and the thermoelectric properties of PbTiO$_3$ from first principles|Anindya Roy###
(28262, 28262)
 The lattice thermal conductivity (kapparm L) of PbTiO3 (PT<missing VAR>O) isestimated using a combination of em ab initio calculations and semiclassicalBoltzmann transport equation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1, 'for', 2]

PbTe
###Estimates of the thermal conductivity and the thermoelectric properties of PbTiO$_3$ from first principles|Anindya Roy###
(28341, 28342)
 The computed kapparm L<missing VAR> is remarkably low,nearly comparable with the kapparm L<missing VAR> of good thermoelectric materialssuch as PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1, 'for', 1]

In
###Estimates of the thermal conductivity and the thermoelectric properties of PbTiO$_3$ from first principles|Anindya Roy###
(28345, 28345)
 In addition, a semiclassical analysis of the electronic transportquantities is presented, which suggests excellent thermoelectric properties,with a figure of merit zT well over 1 for a wide range of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1, 'for', 0]

Bi
###Thermoelectric properties of new Bi-chalcogenide layered compounds|Yoshikazu Mizuguchi,Atsuhiro Nishida,Atsushi Omachi,Osuke Miura###
(28466, 28466)
Thermoelectric properties of new Bi-chalcogenide layered compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2012.0, 'Due', 1],[153.0, 0.36, 'in', 2]

Bi
###Thermoelectric properties of new Bi-chalcogenide layered compounds|Yoshikazu Mizuguchi,Atsuhiro Nishida,Atsushi Omachi,Osuke Miura###
(28479, 28479)
 The layered Bi-chalcogenide compounds have been drawing much attention as anew layered superconductor family since 2012. Due to the rich variation ofcrystal structure and constituent elements, the development of new physics andchemistry of the layered Bi-chalcogenide family and its applications asfunctional materials have been expected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 2012.0, 'Due', 0],[140.0, 0.36, 'in', 1]

Bi
###Thermoelectric properties of new Bi-chalcogenide layered compounds|Yoshikazu Mizuguchi,Atsuhiro Nishida,Atsushi Omachi,Osuke Miura###
(28554, 28554)
 The layered Bi-chalcogenide compounds have been drawing much attention as anew layered superconductor family since 2012. Due to the rich variation ofcrystal structure and constituent elements, the development of new physics andchemistry of the layered Bi-chalcogenide family and its applications asfunctional materials have been expected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2012.0, 'Due', 0],[65.0, 0.36, 'in', 1]

Bi
###Thermoelectric properties of new Bi-chalcogenide layered compounds|Yoshikazu Mizuguchi,Atsuhiro Nishida,Atsushi Omachi,Osuke Miura###
(28596, 28596)
 Recently, it was revealed that thelayered Bi chalcogenides can show a relatively high thermoelectric performance(ZT  0.36 in LaOBiSSe at 650 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2012.0, 'Due', 1],[23.0, 0.36, 'in', 0]

LaOBiSSe
###Thermoelectric properties of new Bi-chalcogenide layered compounds|Yoshikazu Mizuguchi,Atsuhiro Nishida,Atsushi Omachi,Osuke Miura###
(28621, 28625)
 Recently, it was revealed that thelayered Bi chalcogenides can show a relatively high thermoelectric performance(ZT  0.36 in LaOBiSSe at 650 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 2012.0, 'Due', 1],[2.0, 0.36, 'in', 0]

K
###Thermoelectric properties of new Bi-chalcogenide layered compounds|Yoshikazu Mizuguchi,Atsuhiro Nishida,Atsushi Omachi,Osuke Miura###
(28631, 28631)
 Recently, it was revealed that thelayered Bi chalcogenides can show a relatively high thermoelectric performance(ZT  0.36 in LaOBiSSe at 650 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2012.0, 'Due', 1],[12.0, 0.36, 'in', 0]

Bi
###Thermoelectric properties of new Bi-chalcogenide layered compounds|Yoshikazu Mizuguchi,Atsuhiro Nishida,Atsushi Omachi,Osuke Miura###
(28655, 28655)
 Here, we show the crystal structurevariation of the Bi-chalcogenide family and their thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 2012.0, 'Due', 2],[36.0, 0.36, 'in', 1]

CuAgSe
###Anomalous transport and thermoelectric performances of CuAgSe compounds|A. J. Hong,L. Li,H. X. Zhu,X. H. Zhou,Q. Y. He,W. S. Liu,Z. B. Yan,J. M. Liu,Z. F. Ren###
(28741, 28743)
Anomalous transport and thermoelectric performances of CuAgSe compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 623, 'K', 4],[203.0, 0.95, ',', 4]

Se
###Anomalous transport and thermoelectric performances of CuAgSe compounds|A. J. Hong,L. Li,H. X. Zhu,X. H. Zhou,Q. Y. He,W. S. Liu,Z. B. Yan,J. M. Liu,Z. F. Ren###
(28778, 28778)
 The copper silver selenide has two phases the low-temperature semimetalphase (alpha-CuAgSe) and high-temperature phonon-glass superionic phase(b<missing VAR>eta-CuAgSe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 623, 'K', 3],[168.0, 0.95, ',', 3]

Se
###Anomalous transport and thermoelectric performances of CuAgSe compounds|A. J. Hong,L. Li,H. X. Zhu,X. H. Zhou,Q. Y. He,W. S. Liu,Z. B. Yan,J. M. Liu,Z. F. Ren###
(28802, 28802)
 The copper silver selenide has two phases the low-temperature semimetalphase (alpha-CuAgSe) and high-temperature phonon-glass superionic phase(b<missing VAR>eta-CuAgSe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 623, 'K', 3],[144.0, 0.95, ',', 3]

In
###Anomalous transport and thermoelectric performances of CuAgSe compounds|A. J. Hong,L. Li,H. X. Zhu,X. H. Zhou,Q. Y. He,W. S. Liu,Z. B. Yan,J. M. Liu,Z. F. Ren###
(28806, 28806)
 In this work, the electric transport and thermoelectricproperties of the two phases are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 623, 'K', 2],[140.0, 0.95, ',', 2]

CuAgSe
###Anomalous transport and thermoelectric performances of CuAgSe compounds|A. J. Hong,L. Li,H. X. Zhu,X. H. Zhou,Q. Y. He,W. S. Liu,Z. B. Yan,J. M. Liu,Z. F. Ren###
(28853, 28855)
 It is revealed that theb<missing VAR>eta-CuAgSe is a p<missing VAR>-type semiconductor and exhibits low thermal conductivitywhile the alpha-CuAgSe shows metallic conduction with dominant n<missing VAR>-typecarriers and low electrical resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 623, 'K', 1],[91.0, 0.95, ',', 1]

CuAgSe
###Anomalous transport and thermoelectric performances of CuAgSe compounds|A. J. Hong,L. Li,H. X. Zhu,X. H. Zhou,Q. Y. He,W. S. Liu,Z. B. Yan,J. M. Liu,Z. F. Ren###
(28884, 28886)
 It is revealed that theb<missing VAR>eta-CuAgSe is a p<missing VAR>-type semiconductor and exhibits low thermal conductivitywhile the alpha-CuAgSe shows metallic conduction with dominant n<missing VAR>-typecarriers and low electrical resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 623, 'K', 1],[60.0, 0.95, ',', 1]

CuAgSe
###Anomalous transport and thermoelectric performances of CuAgSe compounds|A. J. Hong,L. Li,H. X. Zhu,X. H. Zhou,Q. Y. He,W. S. Liu,Z. B. Yan,J. M. Liu,Z. F. Ren###
(28937, 28939)
 The thermoelectric figure of merit zTof the polycrystalline b<missing VAR>eta-CuAgSe at 623 K is 0.95, suggesting thatsuperionic CuAgSe can be a promising thermoelectric candidate in theintermediate temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 623, 'K', 0],[7.0, 0.95, ',', 0]

CuAgSe
###Anomalous transport and thermoelectric performances of CuAgSe compounds|A. J. Hong,L. Li,H. X. Zhu,X. H. Zhou,Q. Y. He,W. S. Liu,Z. B. Yan,J. M. Liu,Z. F. Ren###
(28956, 28958)
 The thermoelectric figure of merit zTof the polycrystalline b<missing VAR>eta-CuAgSe at 623 K is 0.95, suggesting thatsuperionic CuAgSe can be a promising thermoelectric candidate in theintermediate temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 623, 'K', 0],[10.0, 0.95, ',', 0]

S
###Thermoelectric transport through Majorana bound states and violation of Wiedemann-Franz law|J. P. Ramos-Andrade,O. Ávalos-Ovando,P. A. Orellana,S. E. Ulloa###
(29051, 29051)
 We study features of the thermoelectric transport through a Kitaev chainhosting Majorana bound states (M<missing VAR>BS) at its ends.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###Thermoelectric transport through Majorana bound states and violation of Wiedemann-Franz law|J. P. Ramos-Andrade,O. Ávalos-Ovando,P. A. Orellana,S. E. Ulloa###
(29103, 29104)
 We describe the behavior ofthe Seebeck coefficient and the ZT figure of merit for two differentconfigurations between M<missing VAR>BS and normal current leads.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Thermoelectric transport through Majorana bound states and violation of Wiedemann-Franz law|J. P. Ramos-Andrade,O. Ávalos-Ovando,P. A. Orellana,S. E. Ulloa###
(29204, 29204)
 These findings could lead tointeresting thermoelectric-based M<missing VAR>BSs detection devices, via measurements ofthe Seebeck coefficient and figure of merit.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Feedback-type thermoelectric effect in correlated solids|Yugo Onishi,Naoto Nagaosa###
(29282, 29282)
 A new thermoelectric effect mechanism inspired by an autonomous Maxwells<missing VAR>demon [P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 110, ',', 7]

In
###Feedback-type thermoelectric effect in correlated solids|Yugo Onishi,Naoto Nagaosa###
(29333, 29333)
 In contrast to the former work where a modelfor microscopic systems is proposed, a specific model for the thermoelectriceffect in solid is formulated and its response to the electric field andtemperature gradient is calculated in the framework of stochasticthermodynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 110, ',', 1]

PtSe2
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(29500, 29502)
Biaxial strain tuned thermoelectric properties in monolayer mathrmPtSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, -4.02, '%', 5],[361.0, 60, '%', 5]

In
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(29543, 29543)
 In this work, wesystematically study biaxial strain dependence of electronic structures andthermoelectric properties (both electron and phonon parts) of monolayermathrmPtSe2 with generalized gradient approximation (GGA) plus spin-orbitcoupling (SOC) for electron part and GGA for phonon part.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, -4.02, '%', 3],[320.0, 60, '%', 3]

PtSe2
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(29594, 29596)
 In this work, wesystematically study biaxial strain dependence of electronic structures andthermoelectric properties (both electron and phonon parts) of monolayermathrmPtSe2 with generalized gradient approximation (GGA) plus spin-orbitcoupling (SOC) for electron part and GGA for phonon part.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, -4.02, '%', 3],[267.0, 60, '%', 3]

(SOC)
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(29621, 29625)
 In this work, wesystematically study biaxial strain dependence of electronic structures andthermoelectric properties (both electron and phonon parts) of monolayermathrmPtSe2 with generalized gradient approximation (GGA) plus spin-orbitcoupling (SOC) for electron part and GGA for phonon part.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, -4.02, '%', 3],[238.0, 60, '%', 3]

CB
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(29675, 29676)
 Calculated resultsshow that compressive or tensile strain can induce conduction band minimum(CBM) or valence band maximum (VBM) transition, which produces importanteffects on Seebeck coefficient.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, -4.02, '%', 2],[187.0, 60, '%', 2]

VB
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(29689, 29690)
 Calculated resultsshow that compressive or tensile strain can induce conduction band minimum(CBM) or valence band maximum (VBM) transition, which produces importanteffects on Seebeck coefficient.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, -4.02, '%', 2],[173.0, 60, '%', 2]

CB
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(29762, 29763)
 It is found that compressive or tensile straincan induce significantly enhanced n<missing VAR>- or p<missing VAR>-type Seebeck coefficient at thecritical strain of CBM<missing VAR> or VBM<missing VAR> transition, which can be explained bystrain-induced band convergence.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, -4.02, '%', 1],[100.0, 60, '%', 1]

VB
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(29768, 29769)
 It is found that compressive or tensile straincan induce significantly enhanced n<missing VAR>- or p<missing VAR>-type Seebeck coefficient at thecritical strain of CBM<missing VAR> or VBM<missing VAR> transition, which can be explained bystrain-induced band convergence.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, -4.02, '%', 1],[94.0, 60, '%', 1]

Zr
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(30025, 30025)
 Tuningthermoelectric properties with strain also can be applied to othersemiconducting transition-metal dichalcogenide monolayers mathrmMX2(M<missing VAR>Zr, Hf, Mo, W and Pt; X<missing VAR>S, Se and Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, -4.02, '%', 3],[162.0, 60, '%', 3]

Hf
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(30028, 30028)
 Tuningthermoelectric properties with strain also can be applied to othersemiconducting transition-metal dichalcogenide monolayers mathrmMX2(M<missing VAR>Zr, Hf, Mo, W and Pt; X<missing VAR>S, Se and Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, -4.02, '%', 3],[165.0, 60, '%', 3]

Mo
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(30031, 30031)
 Tuningthermoelectric properties with strain also can be applied to othersemiconducting transition-metal dichalcogenide monolayers mathrmMX2(M<missing VAR>Zr, Hf, Mo, W and Pt; X<missing VAR>S, Se and Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, -4.02, '%', 3],[168.0, 60, '%', 3]

W
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(30034, 30034)
 Tuningthermoelectric properties with strain also can be applied to othersemiconducting transition-metal dichalcogenide monolayers mathrmMX2(M<missing VAR>Zr, Hf, Mo, W and Pt; X<missing VAR>S, Se and Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, -4.02, '%', 3],[171.0, 60, '%', 3]

Pt
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(30038, 30038)
 Tuningthermoelectric properties with strain also can be applied to othersemiconducting transition-metal dichalcogenide monolayers mathrmMX2(M<missing VAR>Zr, Hf, Mo, W and Pt; X<missing VAR>S, Se and Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, -4.02, '%', 3],[175.0, 60, '%', 3]

S
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(30042, 30042)
 Tuningthermoelectric properties with strain also can be applied to othersemiconducting transition-metal dichalcogenide monolayers mathrmMX2(M<missing VAR>Zr, Hf, Mo, W and Pt; X<missing VAR>S, Se and Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, -4.02, '%', 3],[179.0, 60, '%', 3]

Se
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(30045, 30045)
 Tuningthermoelectric properties with strain also can be applied to othersemiconducting transition-metal dichalcogenide monolayers mathrmMX2(M<missing VAR>Zr, Hf, Mo, W and Pt; X<missing VAR>S, Se and Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, -4.02, '%', 3],[182.0, 60, '%', 3]

Te
###Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$|San-Dong Guo,Lun Zhang###
(30049, 30049)
 Tuningthermoelectric properties with strain also can be applied to othersemiconducting transition-metal dichalcogenide monolayers mathrmMX2(M<missing VAR>Zr, Hf, Mo, W and Pt; X<missing VAR>S, Se and Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, -4.02, '%', 3],[186.0, 60, '%', 3]

In
###Optimizing isotope and vacancy engineering in graphene ribbons to enhance the thermoelectric performance without degrading the electronic properties|Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz###
(30148, 30148)
 Ingraphene, the high phonon thermal conductivity is the main factor limiting thethermoelectric conversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 5, 'dimer', 5],[389.0, 0.26, 'for', 5]

In
###Optimizing isotope and vacancy engineering in graphene ribbons to enhance the thermoelectric performance without degrading the electronic properties|Van-Truong Tran,Jérôme Saint-Martin,Philippe Dollfus,Sebastian Volz###
(30298, 30298)
 In this study we show that appropriate sources ofdisorder, including isotopes and vacancies at lowest electron densitypositions, can be used as phonon scatterers to reduce the phonon conductance ingraphene ribbons without degrading the electrical conductance, particularly inthe low-energy region which is the most important range for device operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 5, 'dimer', 2],[239.0, 0.26, 'for', 2]

C
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30685, 30685)
 Two-dimensional (2D)transition-metal dichalcogenides (TMDC) have emerged as promising candidatesfor thermoelectric applications due to their large effective mass and lowthermal conductivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 2, 'D', 6],[380.0, 2, 'D', 7]

In
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30727, 30727)
 In this article, we study the thermoelectric performanceof lateral TMDC heterostructures within a multiscale quantum transportframework.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 2, 'D', 5],[338.0, 2, 'D', 6]

C
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30752, 30752)
 In this article, we study the thermoelectric performanceof lateral TMDC heterostructures within a multiscale quantum transportframework.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 2, 'D', 5],[313.0, 2, 'D', 6]

Cs
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30806, 30806)
 Both n<missing VAR>-type and p<missing VAR>-type lateral heterostructures are consideredfor all possible combinations of semiconducting TMDCs MoS2, MoSe2,WS2, and WSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 2, 'D', 4],[259.0, 2, 'D', 5]

MoS2
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30808, 30810)
 Both n<missing VAR>-type and p<missing VAR>-type lateral heterostructures are consideredfor all possible combinations of semiconducting TMDCs MoS2, MoSe2,WS2, and WSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 2, 'D', 4],[255.0, 2, 'D', 5]

MoSe2
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30813, 30815)
 Both n<missing VAR>-type and p<missing VAR>-type lateral heterostructures are consideredfor all possible combinations of semiconducting TMDCs MoS2, MoSe2,WS2, and WSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 2, 'D', 4],[250.0, 2, 'D', 5]

WS2
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30819, 30821)
 Both n<missing VAR>-type and p<missing VAR>-type lateral heterostructures are consideredfor all possible combinations of semiconducting TMDCs MoS2, MoSe2,WS2, and WSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 2, 'D', 4],[244.0, 2, 'D', 5]

WSe2
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30826, 30828)
 Both n<missing VAR>-type and p<missing VAR>-type lateral heterostructures are consideredfor all possible combinations of semiconducting TMDCs MoS2, MoSe2,WS2, and WSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 2, 'D', 4],[237.0, 2, 'D', 5]

Cs
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30895, 30895)
 The band alignment between these materials is found toplay a crucial in enhancing the thermoelectric figure-of-merit (ZT) and powerfactor far beyond those of pristine TMDCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 2, 'D', 3],[170.0, 2, 'D', 4]

In
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30898, 30898)
 In particular, we show that theroom-temperature ZT value of n<missing VAR>-type WS2 with WSe2 triangularinclusions, is five times larger than the pristine WS2 monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 2, 'D', 2],[167.0, 2, 'D', 3]

WS2
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30927, 30929)
 In particular, we show that theroom-temperature ZT value of n<missing VAR>-type WS2 with WSe2 triangularinclusions, is five times larger than the pristine WS2 monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2, 'D', 2],[136.0, 2, 'D', 3]

WSe2
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30933, 30935)
 In particular, we show that theroom-temperature ZT value of n<missing VAR>-type WS2 with WSe2 triangularinclusions, is five times larger than the pristine WS2 monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 2, 'D', 2],[130.0, 2, 'D', 3]

WS2
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30957, 30959)
 In particular, we show that theroom-temperature ZT value of n<missing VAR>-type WS2 with WSe2 triangularinclusions, is five times larger than the pristine WS2 monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'D', 2],[106.0, 2, 'D', 3]

MoSe2
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30969, 30971)
 p<missing VAR>-typeMoSe2 with WSe2 inclusions is also shown to have a room-temperature ZTvalue about two times larger than the pristine MoSe2 monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 2, 'D', 1],[94.0, 2, 'D', 2]

WSe2
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(30975, 30977)
 p<missing VAR>-typeMoSe2 with WSe2 inclusions is also shown to have a room-temperature ZTvalue about two times larger than the pristine MoSe2 monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'D', 1],[88.0, 2, 'D', 2]

MoSe2
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(31017, 31019)
 p<missing VAR>-typeMoSe2 with WSe2 inclusions is also shown to have a room-temperature ZTvalue about two times larger than the pristine MoSe2 monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2, 'D', 1],[46.0, 2, 'D', 2]

C
###Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices|Sathwik Bharadwaj,Ashwin Ramasubramaniam,L. R. Ram-Mohan###
(31072, 31072)
 Hence, 2D lateral TMDC heterostructures opennew avenues to develop ultra-efficient, planar thermoelectric devices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'D', 1],[7.0, 2, 'D', 0]

FeSb2
###Significant suppression of thermal conductivity in FeSb2 by Te doping|Kefeng Wang,Rongwei Hu,C. Petrovic###
(31119, 31121)
Significant suppression of thermal conductivity in FeSb2 by Te doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 5, '%', 4],[243.0, 100, 'K', 8]

Te
###Significant suppression of thermal conductivity in FeSb2 by Te doping|Kefeng Wang,Rongwei Hu,C. Petrovic###
(31125, 31125)
Significant suppression of thermal conductivity in FeSb2 by Te doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 5, '%', 4],[239.0, 100, 'K', 8]

FeSb2
###Significant suppression of thermal conductivity in FeSb2 by Te doping|Kefeng Wang,Rongwei Hu,C. Petrovic###
(31138, 31140)
 Kondo insulator like material FeSb2 was found to exhibit colossal Seebeckcoefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 5, '%', 3],[224.0, 100, 'K', 7]

Te
###Significant suppression of thermal conductivity in FeSb2 by Te doping|Kefeng Wang,Rongwei Hu,C. Petrovic###
(31219, 31219)
 Here we studied the influence of Te doping at Sb site on thermalconductivity and thermoelectric effect in high quality single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 5, '%', 1],[145.0, 100, 'K', 5]

Sb
###Significant suppression of thermal conductivity in FeSb2 by Te doping|Kefeng Wang,Rongwei Hu,C. Petrovic###
(31225, 31225)
 Here we studied the influence of Te doping at Sb site on thermalconductivity and thermoelectric effect in high quality single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 5, '%', 1],[139.0, 100, 'K', 5]

Te
###Significant suppression of thermal conductivity in FeSb2 by Te doping|Kefeng Wang,Rongwei Hu,C. Petrovic###
(31262, 31262)
Surprisingly, only 5% Te doping suppresses thermal conductivity by two ordersof magnitude, which may be attributed to the substitution disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 5, '%', 0],[102.0, 100, 'K', 4]

Te
###Significant suppression of thermal conductivity in FeSb2 by Te doping|Kefeng Wang,Rongwei Hu,C. Petrovic###
(31301, 31301)
 Te dopingalso results in transition from an semiconductor to a metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 5, '%', 1],[63.0, 100, 'K', 3]

Fe(Sb09Te01)2
###Significant suppression of thermal conductivity in FeSb2 by Te doping|Kefeng Wang,Rongwei Hu,C. Petrovic###
(31350, 31359)
 005) in Fe(Sb09Te01)2 at ?
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0.09523809523809523,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 5, '%', 3],[5.0, 100, 'K', 1]

FeSb2
###Significant suppression of thermal conductivity in FeSb2 by Te doping|Kefeng Wang,Rongwei Hu,C. Petrovic###
(31402, 31404)
 100K wasenhanced by about one order of magnitude when compared to ZT < 0005 in undopedFeSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 5, '%', 4],[38.0, 100, 'K', 0]

CoFeYGe
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(31747, 31750)
Thermodynamic and Thermoelectric Properties of CoFeYGe (Y Ti, Cr) Quaternary Heusler Alloys First Principle Calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 0.38, 'eV', 4],[263.0, 3.01, 'W', 5],[299.0, 1100, 'K', 7],[321.0, 60.2, '%', 8],[366.0, 0.65, 'were', 9]

Y
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(31753, 31753)
Thermodynamic and Thermoelectric Properties of CoFeYGe (Y Ti, Cr) Quaternary Heusler Alloys First Principle Calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 0.38, 'eV', 4],[260.0, 3.01, 'W', 5],[296.0, 1100, 'K', 7],[318.0, 60.2, '%', 8],[363.0, 0.65, 'were', 9]

Ti
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(31755, 31755)
Thermodynamic and Thermoelectric Properties of CoFeYGe (Y Ti, Cr) Quaternary Heusler Alloys First Principle Calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 0.38, 'eV', 4],[258.0, 3.01, 'W', 5],[294.0, 1100, 'K', 7],[316.0, 60.2, '%', 8],[361.0, 0.65, 'were', 9]

Cr
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(31758, 31758)
Thermodynamic and Thermoelectric Properties of CoFeYGe (Y Ti, Cr) Quaternary Heusler Alloys First Principle Calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 0.38, 'eV', 4],[255.0, 3.01, 'W', 5],[291.0, 1100, 'K', 7],[313.0, 60.2, '%', 8],[358.0, 0.65, 'were', 9]

In
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(31823, 31823)
 In thiswork, we present the structural, electronic, magnetic, mechanical,thermodynamic, dynamic, and thermoelectric properties of CoFeYGe (Y  Ti, Cr)quaternary Heusler compounds using the density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.38, 'eV', 2],[190.0, 3.01, 'W', 3],[226.0, 1100, 'K', 5],[248.0, 60.2, '%', 6],[293.0, 0.65, 'were', 7]

CoFeYGe
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(31864, 31867)
 In thiswork, we present the structural, electronic, magnetic, mechanical,thermodynamic, dynamic, and thermoelectric properties of CoFeYGe (Y  Ti, Cr)quaternary Heusler compounds using the density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.38, 'eV', 2],[146.0, 3.01, 'W', 3],[182.0, 1100, 'K', 5],[204.0, 60.2, '%', 6],[249.0, 0.65, 'were', 7]

Y
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(31870, 31870)
 In thiswork, we present the structural, electronic, magnetic, mechanical,thermodynamic, dynamic, and thermoelectric properties of CoFeYGe (Y  Ti, Cr)quaternary Heusler compounds using the density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.38, 'eV', 2],[143.0, 3.01, 'W', 3],[179.0, 1100, 'K', 5],[201.0, 60.2, '%', 6],[246.0, 0.65, 'were', 7]

Ti
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(31873, 31873)
 In thiswork, we present the structural, electronic, magnetic, mechanical,thermodynamic, dynamic, and thermoelectric properties of CoFeYGe (Y  Ti, Cr)quaternary Heusler compounds using the density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 0.38, 'eV', 2],[140.0, 3.01, 'W', 3],[176.0, 1100, 'K', 5],[198.0, 60.2, '%', 6],[243.0, 0.65, 'were', 7]

Cr
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(31876, 31876)
 In thiswork, we present the structural, electronic, magnetic, mechanical,thermodynamic, dynamic, and thermoelectric properties of CoFeYGe (Y  Ti, Cr)quaternary Heusler compounds using the density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.38, 'eV', 2],[137.0, 3.01, 'W', 3],[173.0, 1100, 'K', 5],[195.0, 60.2, '%', 6],[240.0, 0.65, 'were', 7]

CoFeCrGe
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(31940, 31943)
 Both CoFeCrGe and CoFeTiGe compoundsshow a ferromagnetic and ferrimagnetic half-metallic behavior with band gaps of0.41 and 0.38 eV, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.38, 'eV', 0],[70.0, 3.01, 'W', 1],[106.0, 1100, 'K', 3],[128.0, 60.2, '%', 4],[173.0, 0.65, 'were', 5]

CoFeTiGe
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(31947, 31950)
 Both CoFeCrGe and CoFeTiGe compoundsshow a ferromagnetic and ferrimagnetic half-metallic behavior with band gaps of0.41 and 0.38 eV, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0.38, 'eV', 0],[63.0, 3.01, 'W', 1],[99.0, 1100, 'K', 3],[121.0, 60.2, '%', 4],[166.0, 0.65, 'were', 5]

K
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(32018, 32018)
K) (3.47 W/(m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.38, 'eV', 2],[5.0, 3.01, 'W', 1],[31.0, 1100, 'K', 1],[53.0, 60.2, '%', 2],[98.0, 0.65, 'were', 3]

K
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(32029, 32029)
K)) for CoFeCrGe(CoFeTiGe) at 1100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.38, 'eV', 3],[16.0, 3.01, 'W', 2],[20.0, 1100, 'K', 0],[42.0, 60.2, '%', 1],[87.0, 0.65, 'were', 2]

CoFeCrGe
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(32035, 32038)
K)) for CoFeCrGe(CoFeTiGe) at 1100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0.38, 'eV', 3],[22.0, 3.01, 'W', 2],[11.0, 1100, 'K', 0],[33.0, 60.2, '%', 1],[78.0, 0.65, 'were', 2]

(CoFeTiGe)
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(32041, 32046)
K)) for CoFeCrGe(CoFeTiGe) at 1100 K.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.38, 'eV', 3],[28.0, 3.01, 'W', 2],[3.0, 1100, 'K', 0],[25.0, 60.2, '%', 1],[70.0, 0.65, 'were', 2]

CoFeCrGe
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(32090, 32093)
 The optical phonon modes have a large contribution of60.2% (70.9 %) to kappaL value for CoFeCrGe (CoFeTiGe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.38, 'eV', 4],[77.0, 3.01, 'W', 3],[41.0, 1100, 'K', 1],[19.0, 60.2, '%', 0],[23.0, 0.65, 'were', 1]

(CoFeTiGe)
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(32095, 32100)
 The optical phonon modes have a large contribution of60.2% (70.9 %) to kappaL value for CoFeCrGe (CoFeTiGe).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 0.38, 'eV', 4],[82.0, 3.01, 'W', 3],[46.0, 1100, 'K', 1],[24.0, 60.2, '%', 0],[16.0, 0.65, 'were', 1]

CoFeCrGe
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(32122, 32125)
 High ZT values of0.71 and 0.65 were obtained for CoFeCrGe and CoFeTiGe, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 0.38, 'eV', 5],[109.0, 3.01, 'W', 4],[73.0, 1100, 'K', 2],[51.0, 60.2, '%', 1],[6.0, 0.65, 'were', 0]

CoFeTiGe
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(32129, 32132)
 High ZT values of0.71 and 0.65 were obtained for CoFeCrGe and CoFeTiGe, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 0.38, 'eV', 5],[116.0, 3.01, 'W', 4],[80.0, 1100, 'K', 2],[58.0, 60.2, '%', 1],[13.0, 0.65, 'were', 0]

CoFeCrGe
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(32148, 32151)
 Based onour calculations, CoFeCrGe and CoFeTiGe combine both good spintronic andthermoelectric behaviors that may be used in spin injection applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 0.38, 'eV', 6],[135.0, 3.01, 'W', 5],[99.0, 1100, 'K', 3],[77.0, 60.2, '%', 2],[32.0, 0.65, 'were', 1]

CoFeTiGe
###Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations|Raad Haleoot,Bothina Hamad###
(32155, 32158)
 Based onour calculations, CoFeCrGe and CoFeTiGe combine both good spintronic andthermoelectric behaviors that may be used in spin injection applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0.38, 'eV', 6],[142.0, 3.01, 'W', 5],[106.0, 1100, 'K', 3],[84.0, 60.2, '%', 2],[39.0, 0.65, 'were', 1]

STe2
###Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers|Gang Liu,Aiqing Guo,Fengli Cao,Weiwei Ju,Zhaowu Wang,Hui Wang,Guo-Ling Li,Zhibin Gao###
(32211, 32213)
Ultrahigh thermoelectric performance of Janus -STe2 and -SeTe2 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1.2, 'and', 2],[93.0, 0.96, 'eV', 2],[123.0, 3.9, 'and', 3],[124.0, 4.4, 'at', 3],[125.0, 500, 'K', 3]

SeTe2
###Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers|Gang Liu,Aiqing Guo,Fengli Cao,Weiwei Ju,Zhaowu Wang,Hui Wang,Guo-Ling Li,Zhibin Gao###
(32218, 32220)
Ultrahigh thermoelectric performance of Janus -STe2 and -SeTe2 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 1.2, 'and', 2],[86.0, 0.96, 'eV', 2],[116.0, 3.9, 'and', 3],[117.0, 4.4, 'at', 3],[118.0, 500, 'K', 3]

STe2
###Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers|Gang Liu,Aiqing Guo,Fengli Cao,Weiwei Ju,Zhaowu Wang,Hui Wang,Guo-Ling Li,Zhibin Gao###
(32251, 32253)
 Combined with first-principles calculations and semiclassical Boltzmanntransport theory, Janus alpha-STe2 and alpha-SeTe2 monolayers areinvestigated systematically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1.2, 'and', 1],[53.0, 0.96, 'eV', 1],[83.0, 3.9, 'and', 2],[84.0, 4.4, 'at', 2],[85.0, 500, 'K', 2]

SeTe2
###Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers|Gang Liu,Aiqing Guo,Fengli Cao,Weiwei Ju,Zhaowu Wang,Hui Wang,Guo-Ling Li,Zhibin Gao###
(32259, 32261)
 Combined with first-principles calculations and semiclassical Boltzmanntransport theory, Janus alpha-STe2 and alpha-SeTe2 monolayers areinvestigated systematically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 1.2, 'and', 1],[45.0, 0.96, 'eV', 1],[75.0, 3.9, 'and', 2],[76.0, 4.4, 'at', 2],[77.0, 500, 'K', 2]

STe2
###Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers|Gang Liu,Aiqing Guo,Fengli Cao,Weiwei Ju,Zhaowu Wang,Hui Wang,Guo-Ling Li,Zhibin Gao###
(32277, 32279)
 Janus alpha-STe2 and alpha-SeTe2 monolayersare indirect semiconductors with band gaps of 1.20 and 0.96 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1.2, 'and', 0],[27.0, 0.96, 'eV', 0],[57.0, 3.9, 'and', 1],[58.0, 4.4, 'at', 1],[59.0, 500, 'K', 1]

SeTe2
###Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers|Gang Liu,Aiqing Guo,Fengli Cao,Weiwei Ju,Zhaowu Wang,Hui Wang,Guo-Ling Li,Zhibin Gao###
(32285, 32287)
 Janus alpha-STe2 and alpha-SeTe2 monolayersare indirect semiconductors with band gaps of 1.20 and 0.96 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1.2, 'and', 0],[19.0, 0.96, 'eV', 0],[49.0, 3.9, 'and', 1],[50.0, 4.4, 'at', 1],[51.0, 500, 'K', 1]

Te
###Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers|Gang Liu,Aiqing Guo,Fengli Cao,Weiwei Ju,Zhaowu Wang,Hui Wang,Guo-Ling Li,Zhibin Gao###
(32358, 32358)
 It is foundthey possess ultrahigh figure of merit (ZT) values of 3.9 and 4.4 at 500 K,much higher than that of the pristine alpha-Te monolayer (2.8).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1.2, 'and', 1],[52.0, 0.96, 'eV', 1],[22.0, 3.9, 'and', 0],[21.0, 4.4, 'at', 0],[20.0, 500, 'K', 0]

Te
###Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers|Gang Liu,Aiqing Guo,Fengli Cao,Weiwei Ju,Zhaowu Wang,Hui Wang,Guo-Ling Li,Zhibin Gao###
(32402, 32402)
 The higherZT originates from Janus structures reduce lattice thermal conductivitiesremarkably compared with pristine alpha-Te monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1.2, 'and', 2],[96.0, 0.96, 'eV', 2],[66.0, 3.9, 'and', 1],[65.0, 4.4, 'at', 1],[64.0, 500, 'K', 1]

STe2
###Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers|Gang Liu,Aiqing Guo,Fengli Cao,Weiwei Ju,Zhaowu Wang,Hui Wang,Guo-Ling Li,Zhibin Gao###
(32510, 32512)
 This work suggests the potential applications ofJanus alpha-STe2 and alpha-SeTe2 monolayers as thermoelectric materialsand highlights Janus structure as an effective way to enhance thermoelectricperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 1.2, 'and', 5],[204.0, 0.96, 'eV', 5],[174.0, 3.9, 'and', 4],[173.0, 4.4, 'at', 4],[172.0, 500, 'K', 4]

SeTe2
###Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers|Gang Liu,Aiqing Guo,Fengli Cao,Weiwei Ju,Zhaowu Wang,Hui Wang,Guo-Ling Li,Zhibin Gao###
(32518, 32520)
 This work suggests the potential applications ofJanus alpha-STe2 and alpha-SeTe2 monolayers as thermoelectric materialsand highlights Janus structure as an effective way to enhance thermoelectricperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 1.2, 'and', 5],[212.0, 0.96, 'eV', 5],[182.0, 3.9, 'and', 4],[181.0, 4.4, 'at', 4],[180.0, 500, 'K', 4]

As
###Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model|Neophytos Neophytou,Martin Wagner,Hans Kosina,Siegfried Selberherr###
(32649, 32649)
 As a result of suppressedphonon conduction, large improvements on the thermoelectric figure of merit,ZT, have been recently reported in nanostructures, compared to the rawmaterials ZT values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 3, 'nm', 4],[234.0, 12, 'nm', 4],[328.0, 7, 'nm', 6]

In
###Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model|Neophytos Neophytou,Martin Wagner,Hans Kosina,Siegfried Selberherr###
(32717, 32717)
 In addition, low dimensionality can improve a devices<missing VAR>power factor, offering an additional enhancement in ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 3, 'nm', 3],[166.0, 12, 'nm', 3],[260.0, 7, 'nm', 5]

In
###Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model|Neophytos Neophytou,Martin Wagner,Hans Kosina,Siegfried Selberherr###
(32755, 32755)
 In this work theatomistic sp3d5s-spin-orbit-coupled tight-binding model is used to calculatethe electronic structure of silicon nanowires (NWs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 3, 'nm', 2],[128.0, 12, 'nm', 2],[222.0, 7, 'nm', 4]

N
###Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model|Neophytos Neophytou,Martin Wagner,Hans Kosina,Siegfried Selberherr###
(32806, 32806)
 In this work theatomistic sp3d5s-spin-orbit-coupled tight-binding model is used to calculatethe electronic structure of silicon nanowires (NWs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3, 'nm', 2],[77.0, 12, 'nm', 2],[171.0, 7, 'nm', 4]

In
###Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model|Neophytos Neophytou,Martin Wagner,Hans Kosina,Siegfried Selberherr###
(33002, 33002)
 In some cases, however, scalingdoes not enhance the performance at all.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 3, 'nm', 3],[119.0, 12, 'nm', 3],[25.0, 7, 'nm', 1]

AgCl
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33080, 33081)
Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 923, 'K', 2],[116.0, 850, 'K', 2],[222.0, 7.0, 'at', 4],[354.0, 600, 'K', 6]

AgBr
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33085, 33086)
Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 923, 'K', 2],[111.0, 850, 'K', 2],[217.0, 7.0, 'at', 4],[349.0, 600, 'K', 6]

SnSe
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33179, 33180)
 Recently, it is found inexperiments that the largest figure of merit ZT of 2.6 can be reached in SnSecrystals at 923 K and Cu2Se sample at 850 K, which arouses the enormousinterest of seeking high-ZT materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 923, 'K', 0],[17.0, 850, 'K', 0],[123.0, 7.0, 'at', 2],[255.0, 600, 'K', 4]

Cu2Se
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33190, 33192)
 Recently, it is found inexperiments that the largest figure of merit ZT of 2.6 can be reached in SnSecrystals at 923 K and Cu2Se sample at 850 K, which arouses the enormousinterest of seeking high-ZT materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 923, 'K', 0],[5.0, 850, 'K', 0],[111.0, 7.0, 'at', 2],[243.0, 600, 'K', 4]

B
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33243, 33243)
 Based on first-principle calculationsand Boltzman transport equation (BTE), we report in this letter that silverhalides (AgCl and AgBr) in rocksalt structure have excellent TE performances.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 923, 'K', 1],[46.0, 850, 'K', 1],[60.0, 7.0, 'at', 1],[192.0, 600, 'K', 3]

AgCl
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33267, 33268)
 Based on first-principle calculationsand Boltzman transport equation (BTE), we report in this letter that silverhalides (AgCl and AgBr) in rocksalt structure have excellent TE performances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 923, 'K', 1],[70.0, 850, 'K', 1],[35.0, 7.0, 'at', 1],[167.0, 600, 'K', 3]

Br
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33273, 33273)
 Based on first-principle calculationsand Boltzman transport equation (BTE), we report in this letter that silverhalides (AgCl and AgBr) in rocksalt structure have excellent TE performances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 923, 'K', 1],[76.0, 850, 'K', 1],[30.0, 7.0, 'at', 1],[162.0, 600, 'K', 3]

K
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33311, 33311)
 Asuperhigh ZT of about 7.0 at mid-temperature (600K) is obtained in the p<missing VAR>-typedoped AgCl and AgBr crystals, which far exceeds the ZT values of all currentbulk TE materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 923, 'K', 2],[114.0, 850, 'K', 2],[8.0, 7.0, 'at', 0],[124.0, 600, 'K', 2]

AgCl
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33329, 33330)
 Asuperhigh ZT of about 7.0 at mid-temperature (600K) is obtained in the p<missing VAR>-typedoped AgCl and AgBr crystals, which far exceeds the ZT values of all currentbulk TE materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 923, 'K', 2],[132.0, 850, 'K', 2],[26.0, 7.0, 'at', 0],[105.0, 600, 'K', 2]

AgBr
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33334, 33335)
 Asuperhigh ZT of about 7.0 at mid-temperature (600K) is obtained in the p<missing VAR>-typedoped AgCl and AgBr crystals, which far exceeds the ZT values of all currentbulk TE materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 923, 'K', 2],[137.0, 850, 'K', 2],[31.0, 7.0, 'at', 0],[100.0, 600, 'K', 2]

K
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33420, 33420)
 kappaL<missing VAR> 0.10 and 0.09Wm-1K-1 for AgCl and AgBr at 600 K, respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 923, 'K', 4],[223.0, 850, 'K', 4],[117.0, 7.0, 'at', 2],[15.0, 600, 'K', 0]

AgCl
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33426, 33427)
 kappaL<missing VAR> 0.10 and 0.09Wm-1K-1 for AgCl and AgBr at 600 K, respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 923, 'K', 4],[229.0, 850, 'K', 4],[123.0, 7.0, 'at', 2],[8.0, 600, 'K', 0]

AgBr
###Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles|Xiuxian Yang,Zhenhong Dai,Yinchang Zhao,Sheng Meng###
(33431, 33432)
 kappaL<missing VAR> 0.10 and 0.09Wm-1K-1 for AgCl and AgBr at 600 K, respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 923, 'K', 4],[234.0, 850, 'K', 4],[128.0, 7.0, 'at', 2],[3.0, 600, 'K', 0]

Bi2Te3
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33530, 33533)
 We performed the first-principles calculation on common thermoelectricsemiconductors rm Bi2Te3, rm Bi2Se3, rm SiGe, and rm PbTe inbulk three-dimension (3D) and two-dimension (2D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3, 'D', 1],[30.0, 2, 'D', 1],[119.0, 2, 'D', 2],[132.0, 2, 'D', 2],[152.0, 3, 'D', 2],[161.0, 0.09, ',', 2],[180.0, 2, 'D', 3],[194.0, 2, 'D', 3],[223.0, 0.18, ',', 3],[338.0, 2, 'D', 5],[393.0, 2, 'D', 7],[448.0, 2, 'D', 8],[477.0, 2, 'D', 8]

Bi2Se3
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33538, 33541)
 We performed the first-principles calculation on common thermoelectricsemiconductors rm Bi2Te3, rm Bi2Se3, rm SiGe, and rm PbTe inbulk three-dimension (3D) and two-dimension (2D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3, 'D', 1],[38.0, 2, 'D', 1],[111.0, 2, 'D', 2],[124.0, 2, 'D', 2],[144.0, 3, 'D', 2],[153.0, 0.09, ',', 2],[172.0, 2, 'D', 3],[186.0, 2, 'D', 3],[215.0, 0.18, ',', 3],[330.0, 2, 'D', 5],[385.0, 2, 'D', 7],[440.0, 2, 'D', 8],[469.0, 2, 'D', 8]

SiGe
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33546, 33547)
 We performed the first-principles calculation on common thermoelectricsemiconductors rm Bi2Te3, rm Bi2Se3, rm SiGe, and rm PbTe inbulk three-dimension (3D) and two-dimension (2D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 3, 'D', 1],[46.0, 2, 'D', 1],[105.0, 2, 'D', 2],[118.0, 2, 'D', 2],[138.0, 3, 'D', 2],[147.0, 0.09, ',', 2],[166.0, 2, 'D', 3],[180.0, 2, 'D', 3],[209.0, 0.18, ',', 3],[324.0, 2, 'D', 5],[379.0, 2, 'D', 7],[434.0, 2, 'D', 8],[463.0, 2, 'D', 8]

PbTe
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33554, 33555)
 We performed the first-principles calculation on common thermoelectricsemiconductors rm Bi2Te3, rm Bi2Se3, rm SiGe, and rm PbTe inbulk three-dimension (3D) and two-dimension (2D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 3, 'D', 1],[54.0, 2, 'D', 1],[97.0, 2, 'D', 2],[110.0, 2, 'D', 2],[130.0, 3, 'D', 2],[139.0, 0.09, ',', 2],[158.0, 2, 'D', 3],[172.0, 2, 'D', 3],[201.0, 0.18, ',', 3],[316.0, 2, 'D', 5],[371.0, 2, 'D', 7],[426.0, 2, 'D', 8],[455.0, 2, 'D', 8]

H
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33633, 33633)
 We found that miniaturizationof materials does not generally increase the thermoelectric figure of merit(ZT) according to the Hicks and Dresselhaus (HD) theory.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 3, 'D', 2],[133.0, 2, 'D', 2],[19.0, 2, 'D', 1],[32.0, 2, 'D', 1],[52.0, 3, 'D', 1],[61.0, 0.09, ',', 1],[80.0, 2, 'D', 2],[94.0, 2, 'D', 2],[123.0, 0.18, ',', 2],[238.0, 2, 'D', 4],[293.0, 2, 'D', 6],[348.0, 2, 'D', 7],[377.0, 2, 'D', 7]

PbTe
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33657, 33658)
 For example, ZTvalues of 2D  rm PbTe (0.32) and 2D  rm SiGe (0.04) are smaller thantheir 3D counterparts (0.49 and 0.09, respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 3, 'D', 3],[157.0, 2, 'D', 3],[5.0, 2, 'D', 0],[7.0, 2, 'D', 0],[27.0, 3, 'D', 0],[36.0, 0.09, ',', 0],[55.0, 2, 'D', 1],[69.0, 2, 'D', 1],[98.0, 0.18, ',', 1],[213.0, 2, 'D', 3],[268.0, 2, 'D', 5],[323.0, 2, 'D', 6],[352.0, 2, 'D', 6]

SiGe
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33670, 33671)
 For example, ZTvalues of 2D  rm PbTe (0.32) and 2D  rm SiGe (0.04) are smaller thantheir 3D counterparts (0.49 and 0.09, respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 3, 'D', 3],[170.0, 2, 'D', 3],[18.0, 2, 'D', 0],[5.0, 2, 'D', 0],[14.0, 3, 'D', 0],[23.0, 0.09, ',', 0],[42.0, 2, 'D', 1],[56.0, 2, 'D', 1],[85.0, 0.18, ',', 1],[200.0, 2, 'D', 3],[255.0, 2, 'D', 5],[310.0, 2, 'D', 6],[339.0, 2, 'D', 6]

Bi2Te3
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33717, 33720)
 Meanwhile, the ZT valuesof 2D rm Bi2Te3 (0.57) and 2D rm Bi2Se3 (0.43) are larger than thebulks (0.54 and 0.18, respectively), which agree with HD<missing VAR> theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 3, 'D', 4],[217.0, 2, 'D', 4],[65.0, 2, 'D', 1],[52.0, 2, 'D', 1],[32.0, 3, 'D', 1],[23.0, 0.09, ',', 1],[4.0, 2, 'D', 0],[7.0, 2, 'D', 0],[36.0, 0.18, ',', 0],[151.0, 2, 'D', 2],[206.0, 2, 'D', 4],[261.0, 2, 'D', 5],[290.0, 2, 'D', 5]

Bi2Se3
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33731, 33734)
 Meanwhile, the ZT valuesof 2D rm Bi2Te3 (0.57) and 2D rm Bi2Se3 (0.43) are larger than thebulks (0.54 and 0.18, respectively), which agree with HD<missing VAR> theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 3, 'D', 4],[231.0, 2, 'D', 4],[79.0, 2, 'D', 1],[66.0, 2, 'D', 1],[46.0, 3, 'D', 1],[37.0, 0.09, ',', 1],[18.0, 2, 'D', 0],[4.0, 2, 'D', 0],[22.0, 0.18, ',', 0],[137.0, 2, 'D', 2],[192.0, 2, 'D', 4],[247.0, 2, 'D', 5],[276.0, 2, 'D', 5]

H
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33769, 33769)
 Meanwhile, the ZT valuesof 2D rm Bi2Te3 (0.57) and 2D rm Bi2Se3 (0.43) are larger than thebulks (0.54 and 0.18, respectively), which agree with HD<missing VAR> theory.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 3, 'D', 4],[269.0, 2, 'D', 4],[117.0, 2, 'D', 1],[104.0, 2, 'D', 1],[84.0, 3, 'D', 1],[75.0, 0.09, ',', 1],[56.0, 2, 'D', 0],[42.0, 2, 'D', 0],[13.0, 0.18, ',', 0],[102.0, 2, 'D', 2],[157.0, 2, 'D', 4],[212.0, 2, 'D', 5],[241.0, 2, 'D', 5]

H
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33777, 33777)
 The HD<missing VAR> theorybreakdown occurs because the band gap and band flatness of the materials changeupon dimensional reduction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 3, 'D', 5],[277.0, 2, 'D', 5],[125.0, 2, 'D', 2],[112.0, 2, 'D', 2],[92.0, 3, 'D', 2],[83.0, 0.09, ',', 2],[64.0, 2, 'D', 1],[50.0, 2, 'D', 1],[21.0, 0.18, ',', 1],[94.0, 2, 'D', 1],[149.0, 2, 'D', 3],[204.0, 2, 'D', 4],[233.0, 2, 'D', 4]

In
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33876, 33876)
 In all cases, maximum ZTvalues increase proportionally with the band gap and saturate for the band gapabove 10 kBT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 3, 'D', 7],[376.0, 2, 'D', 7],[224.0, 2, 'D', 4],[211.0, 2, 'D', 4],[191.0, 3, 'D', 4],[182.0, 0.09, ',', 4],[163.0, 2, 'D', 3],[149.0, 2, 'D', 3],[120.0, 0.18, ',', 3],[5.0, 2, 'D', 1],[50.0, 2, 'D', 1],[105.0, 2, 'D', 2],[134.0, 2, 'D', 2]

Bi2Te3
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33928, 33931)
 The 2D Bi2Te3 and Bi2Se3 obtain a higher ZT due tothe flat corrugated bands and narrow peaks in their D<missing VAR>OS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 3, 'D', 8],[428.0, 2, 'D', 8],[276.0, 2, 'D', 5],[263.0, 2, 'D', 5],[243.0, 3, 'D', 5],[234.0, 0.09, ',', 5],[215.0, 2, 'D', 4],[201.0, 2, 'D', 4],[172.0, 0.18, ',', 4],[57.0, 2, 'D', 2],[2.0, 2, 'D', 0],[50.0, 2, 'D', 1],[79.0, 2, 'D', 1]

Bi2Se3
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33935, 33938)
 The 2D Bi2Te3 and Bi2Se3 obtain a higher ZT due tothe flat corrugated bands and narrow peaks in their D<missing VAR>OS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 3, 'D', 8],[435.0, 2, 'D', 8],[283.0, 2, 'D', 5],[270.0, 2, 'D', 5],[250.0, 3, 'D', 5],[241.0, 0.09, ',', 5],[222.0, 2, 'D', 4],[208.0, 2, 'D', 4],[179.0, 0.18, ',', 4],[64.0, 2, 'D', 2],[9.0, 2, 'D', 0],[43.0, 2, 'D', 1],[72.0, 2, 'D', 1]

OS
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33973, 33974)
 The 2D Bi2Te3 and Bi2Se3 obtain a higher ZT due tothe flat corrugated bands and narrow peaks in their D<missing VAR>OS.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[476.0, 3, 'D', 8],[473.0, 2, 'D', 8],[321.0, 2, 'D', 5],[308.0, 2, 'D', 5],[288.0, 3, 'D', 5],[279.0, 0.09, ',', 5],[260.0, 2, 'D', 4],[246.0, 2, 'D', 4],[217.0, 0.18, ',', 4],[102.0, 2, 'D', 2],[47.0, 2, 'D', 0],[7.0, 2, 'D', 1],[36.0, 2, 'D', 1]

PbTe
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33983, 33984)
 Meanwhile, the 2D PbTeviolates HD<missing VAR> theory due to the flatter bands it exhibits, while 2D SiGepossesses a small gap Dirac-cone band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[486.0, 3, 'D', 9],[483.0, 2, 'D', 9],[331.0, 2, 'D', 6],[318.0, 2, 'D', 6],[298.0, 3, 'D', 6],[289.0, 0.09, ',', 6],[270.0, 2, 'D', 5],[256.0, 2, 'D', 5],[227.0, 0.18, ',', 5],[112.0, 2, 'D', 3],[57.0, 2, 'D', 1],[2.0, 2, 'D', 0],[26.0, 2, 'D', 0]

H
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(33989, 33989)
 Meanwhile, the 2D PbTeviolates HD<missing VAR> theory due to the flatter bands it exhibits, while 2D SiGepossesses a small gap Dirac-cone band.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[492.0, 3, 'D', 9],[489.0, 2, 'D', 9],[337.0, 2, 'D', 6],[324.0, 2, 'D', 6],[304.0, 3, 'D', 6],[295.0, 0.09, ',', 6],[276.0, 2, 'D', 5],[262.0, 2, 'D', 5],[233.0, 0.18, ',', 5],[118.0, 2, 'D', 3],[63.0, 2, 'D', 1],[8.0, 2, 'D', 0],[21.0, 2, 'D', 0]

SiGe
###Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors|Kevin Octavian,Eddwi H. Hasdeo###
(34012, 34013)
 Meanwhile, the 2D PbTeviolates HD<missing VAR> theory due to the flatter bands it exhibits, while 2D SiGepossesses a small gap Dirac-cone band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[515.0, 3, 'D', 9],[512.0, 2, 'D', 9],[360.0, 2, 'D', 6],[347.0, 2, 'D', 6],[327.0, 3, 'D', 6],[318.0, 0.09, ',', 6],[299.0, 2, 'D', 5],[285.0, 2, 'D', 5],[256.0, 0.18, ',', 5],[141.0, 2, 'D', 3],[86.0, 2, 'D', 1],[31.0, 2, 'D', 0],[2.0, 2, 'D', 0]

SnSe
###Microscopic origin of the excellent thermoelectric performance in n-doped SnSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(34059, 34060)
Microscopic origin of the excellent thermoelectric performance in n<missing VAR>-doped SnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 360, ',', 2],[187.0, 600, 'K', 4],[348.0, 3.1, 'at', 5],[349.0, 807, 'K', 5]

SnSe
###Microscopic origin of the excellent thermoelectric performance in n-doped SnSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(34083, 34084)
 Excellent thermoelectric performance in the out-of-layer n<missing VAR>-doped SnSe hasbeen observed experimentally (Chang et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 360, ',', 1],[163.0, 600, 'K', 3],[324.0, 3.1, 'at', 4],[325.0, 807, 'K', 4]

In
###Microscopic origin of the excellent thermoelectric performance in n-doped SnSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(34157, 34157)
 In the presentwork, by applying extensive first-principles calculations of electron-phononcoupling associated with the calculation of the scattering by ionizedimpurities, we investigate the reasons behind the superior figure of merit aswell as the enhancement of zT above 600 K in n<missing VAR>-doped out-of-layer SnSe, ascompared to p<missing VAR>-doped SnSe with similar carrier densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 360, ',', 2],[90.0, 600, 'K', 0],[251.0, 3.1, 'at', 1],[252.0, 807, 'K', 1]

SnSe
###Microscopic origin of the excellent thermoelectric performance in n-doped SnSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(34261, 34262)
 In the presentwork, by applying extensive first-principles calculations of electron-phononcoupling associated with the calculation of the scattering by ionizedimpurities, we investigate the reasons behind the superior figure of merit aswell as the enhancement of zT above 600 K in n<missing VAR>-doped out-of-layer SnSe, ascompared to p<missing VAR>-doped SnSe with similar carrier densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 360, ',', 2],[14.0, 600, 'K', 0],[146.0, 3.1, 'at', 1],[147.0, 807, 'K', 1]

SnSe
###Microscopic origin of the excellent thermoelectric performance in n-doped SnSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(34276, 34277)
 In the presentwork, by applying extensive first-principles calculations of electron-phononcoupling associated with the calculation of the scattering by ionizedimpurities, we investigate the reasons behind the superior figure of merit aswell as the enhancement of zT above 600 K in n<missing VAR>-doped out-of-layer SnSe, ascompared to p<missing VAR>-doped SnSe with similar carrier densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 360, ',', 2],[29.0, 600, 'K', 0],[131.0, 3.1, 'at', 1],[132.0, 807, 'K', 1]

IV
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34563, 34564)
Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[457.0, 2, 'D', 8]

VI
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34566, 34567)
Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[454.0, 2, 'D', 8]

In
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34609, 34609)
 In this work, we systematically investigate thethermoelectric properties of orthorhombic group IV-VI monolayers mathrmAB(AGe and Sn; BS and Se) by the first-principles calculations andsemiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 2, 'D', 6]

IV
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34635, 34636)
 In this work, we systematically investigate thethermoelectric properties of orthorhombic group IV-VI monolayers mathrmAB(AGe and Sn; BS and Se) by the first-principles calculations andsemiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 2, 'D', 6]

VI
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34638, 34639)
 In this work, we systematically investigate thethermoelectric properties of orthorhombic group IV-VI monolayers mathrmAB(AGe and Sn; BS and Se) by the first-principles calculations andsemiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 2, 'D', 6]

B
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34645, 34645)
 In this work, we systematically investigate thethermoelectric properties of orthorhombic group IV-VI monolayers mathrmAB(AGe and Sn; BS and Se) by the first-principles calculations andsemiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[376.0, 2, 'D', 6]

Ge
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34650, 34650)
 In this work, we systematically investigate thethermoelectric properties of orthorhombic group IV-VI monolayers mathrmAB(AGe and Sn; BS and Se) by the first-principles calculations andsemiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 2, 'D', 6]

Sn
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34654, 34654)
 In this work, we systematically investigate thethermoelectric properties of orthorhombic group IV-VI monolayers mathrmAB(AGe and Sn; BS and Se) by the first-principles calculations andsemiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 2, 'D', 6]

BS
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34657, 34658)
 In this work, we systematically investigate thethermoelectric properties of orthorhombic group IV-VI monolayers mathrmAB(AGe and Sn; BS and Se) by the first-principles calculations andsemiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 2, 'D', 6]

Se
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34662, 34662)
 In this work, we systematically investigate thethermoelectric properties of orthorhombic group IV-VI monolayers mathrmAB(AGe and Sn; BS and Se) by the first-principles calculations andsemiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 2, 'D', 6]

(SOC)
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34695, 34699)
 The spin-orbit coupling (SOC) isincluded to investigate their electronic transport, which produces observableeffects on power factor, especially for n<missing VAR>-type doping.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 2, 'D', 5]

GeS
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34792, 34793)
 The GeSalong zigzag and armchair directions shows the strongest anisotropy, while SnSand SnSe show mostly isotropic efficiency of thermoelectric conversion, whichcan be understood by the strength of anisotropy of their respective powerfactor, electronic and lattice thermal conductivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 2, 'D', 3]

SnS
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34817, 34818)
 The GeSalong zigzag and armchair directions shows the strongest anisotropy, while SnSand SnSe show mostly isotropic efficiency of thermoelectric conversion, whichcan be understood by the strength of anisotropy of their respective powerfactor, electronic and lattice thermal conductivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2, 'D', 3]

SnSe
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34823, 34824)
 The GeSalong zigzag and armchair directions shows the strongest anisotropy, while SnSand SnSe show mostly isotropic efficiency of thermoelectric conversion, whichcan be understood by the strength of anisotropy of their respective powerfactor, electronic and lattice thermal conductivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 2, 'D', 3]

GeS
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34921, 34922)
 Calculated results showthat ZT for different carriers of n<missing VAR>- and p<missing VAR>-type has little difference forGeS, SnS and SnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, 'D', 2]

SnS
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34925, 34926)
 Calculated results showthat ZT for different carriers of n<missing VAR>- and p<missing VAR>-type has little difference forGeS, SnS and SnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'D', 2]

SnSe
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34930, 34931)
 Calculated results showthat ZT for different carriers of n<missing VAR>- and p<missing VAR>-type has little difference forGeS, SnS and SnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, 'D', 2]

GeSe
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34942, 34943)
 It is found that GeSe, SnS and SnSe show betterthermoelectric performance compared to GeS in n<missing VAR>-type doping, and SnS and SnSeexhibit higher efficiency of thermoelectric conversion in p<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'D', 1]

SnS
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34946, 34947)
 It is found that GeSe, SnS and SnSe show betterthermoelectric performance compared to GeS in n<missing VAR>-type doping, and SnS and SnSeexhibit higher efficiency of thermoelectric conversion in p<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'D', 1]

SnSe
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34951, 34952)
 It is found that GeSe, SnS and SnSe show betterthermoelectric performance compared to GeS in n<missing VAR>-type doping, and SnS and SnSeexhibit higher efficiency of thermoelectric conversion in p<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'D', 1]

GeS
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34967, 34968)
 It is found that GeSe, SnS and SnSe show betterthermoelectric performance compared to GeS in n<missing VAR>-type doping, and SnS and SnSeexhibit higher efficiency of thermoelectric conversion in p<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, 'D', 1]

SnS
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34981, 34982)
 It is found that GeSe, SnS and SnSe show betterthermoelectric performance compared to GeS in n<missing VAR>-type doping, and SnS and SnSeexhibit higher efficiency of thermoelectric conversion in p<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, 'D', 1]

SnSe
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(34986, 34987)
 It is found that GeSe, SnS and SnSe show betterthermoelectric performance compared to GeS in n<missing VAR>-type doping, and SnS and SnSeexhibit higher efficiency of thermoelectric conversion in p<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'D', 1]

IV
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(35030, 35031)
Compared to a lot of 2D materials, orthorhombic group IV-VI monolayersmathrmAB (AGe and Sn; BS and Se) may possess better thermoelectricperformance due to higher power factor and lower thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'D', 0]

VI
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(35033, 35034)
Compared to a lot of 2D materials, orthorhombic group IV-VI monolayersmathrmAB (AGe and Sn; BS and Se) may possess better thermoelectricperformance due to higher power factor and lower thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'D', 0]

B
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(35041, 35041)
Compared to a lot of 2D materials, orthorhombic group IV-VI monolayersmathrmAB (AGe and Sn; BS and Se) may possess better thermoelectricperformance due to higher power factor and lower thermal conductivity.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2, 'D', 0]

Ge
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(35045, 35045)
Compared to a lot of 2D materials, orthorhombic group IV-VI monolayersmathrmAB (AGe and Sn; BS and Se) may possess better thermoelectricperformance due to higher power factor and lower thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'D', 0]

Sn
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(35049, 35049)
Compared to a lot of 2D materials, orthorhombic group IV-VI monolayersmathrmAB (AGe and Sn; BS and Se) may possess better thermoelectricperformance due to higher power factor and lower thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'D', 0]

BS
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(35052, 35053)
Compared to a lot of 2D materials, orthorhombic group IV-VI monolayersmathrmAB (AGe and Sn; BS and Se) may possess better thermoelectricperformance due to higher power factor and lower thermal conductivity.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'D', 0]

Se
###Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations|San-Dong Guo###
(35057, 35057)
Compared to a lot of 2D materials, orthorhombic group IV-VI monolayersmathrmAB (AGe and Sn; BS and Se) may possess better thermoelectricperformance due to higher power factor and lower thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, 'D', 0]

K
###Thermoelectric properties of in-plane $90^0$-bent graphene nanoribbons with nanopores|Van-Truong Tran,Alessandro Cresti###
(35305, 35305)
Consequently, the thermoelectric performance of the bent ribbons is better thanits straight ribbon counterparts, in particular at high temperatures above 500K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 500, 'K', 2],[58.0, 160, '%', 2],[63.0, 0.39, 'without', 2],[73.0, 3, 'nanopores', 2],[87.0, 200, '%', 2],[99.0, 24, 'nanopores', 2],[109.0, 1, 'can', 3],[124.0, 1000, 'K', 3]

At
###Thermoelectric properties of in-plane $90^0$-bent graphene nanoribbons with nanopores|Van-Truong Tran,Alessandro Cresti###
(35339, 35339)
 At 500 K, the figure of merit ZTincreases by more than 160% (from 0.39 without pores to 0.64) with 3 nanoporesincorporated, and by more than 200% (up to 0.88) when 24 nanopores areintroduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 500, 'K', 0],[24.0, 160, '%', 0],[29.0, 0.39, 'without', 0],[39.0, 3, 'nanopores', 0],[53.0, 200, '%', 0],[65.0, 24, 'nanopores', 0],[75.0, 1, 'can', 1],[90.0, 1000, 'K', 1]

In
###Thermoelectric properties of in-plane $90^0$-bent graphene nanoribbons with nanopores|Van-Truong Tran,Alessandro Cresti###
(35432, 35432)
 In addition,the thermoelectric performance is shown to be further improved by adoptingasymmetrical leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 500, 'K', 2],[69.0, 160, '%', 2],[64.0, 0.39, 'without', 2],[54.0, 3, 'nanopores', 2],[40.0, 200, '%', 2],[28.0, 24, 'nanopores', 2],[18.0, 1, 'can', 1],[3.0, 1000, 'K', 1]

S
###Universal Limits of Thermopower and Figure of Merit from Transport Energy Statistics|Peter Zahn###
(35593, 35593)
 The search for new thermoelectric materials aims at improving their power andefficiency, as expressed by thermopower S and figure of merit ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 16, ',', 2],[91.0, 96, ',', 2],[215.0, 3, 'times', 5],[424.0, 1.11, ',', 10]

W
###Universal Limits of Thermopower and Figure of Merit from Transport Energy Statistics|Peter Zahn###
(35624, 35624)
 Byconsidering a very general transport spectral function W(E), expressions forS and ZT can be derived, which contain the statistical weights of aneffective distribution function only, see Refs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 16, ',', 1],[60.0, 96, ',', 1],[184.0, 3, 'times', 4],[393.0, 1.11, ',', 9]

S
###Universal Limits of Thermopower and Figure of Merit from Transport Energy Statistics|Peter Zahn###
(35635, 35635)
 Byconsidering a very general transport spectral function W(E), expressions forS and ZT can be derived, which contain the statistical weights of aneffective distribution function only, see Refs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 16, ',', 1],[49.0, 96, ',', 1],[173.0, 3, 'times', 4],[382.0, 1.11, ',', 9]

S
###Universal Limits of Thermopower and Figure of Merit from Transport Energy Statistics|Peter Zahn###
(35740, 35740)
  We assumption of a Lorentzian shape with width kBT resulting from theelectron-phonon coupling allows to estimate an upper limit of S and ZTindependent on the microscopic mechanisms of the transport process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 16, ',', 1],[56.0, 96, ',', 1],[68.0, 3, 'times', 2],[277.0, 1.11, ',', 7]

S
###Universal Limits of Thermopower and Figure of Merit from Transport Energy Statistics|Peter Zahn###
(35788, 35788)
 A simpleestimate for an upper limit of the thermopwer S is derived from  formula.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 16, ',', 2],[104.0, 96, ',', 2],[20.0, 3, 'times', 1],[229.0, 1.11, ',', 6]

V/K
###Universal Limits of Thermopower and Figure of Merit from Transport Energy Statistics|Peter Zahn###
(35835, 35837)
It is given by 3 times the unit of the thermopower kb/e<missing VAR> which is about250mu V/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[154.0, 16, ',', 3],[151.0, 96, ',', 3],[27.0, 3, 'times', 0],[180.0, 1.11, ',', 5]

S
###Universal Limits of Thermopower and Figure of Merit from Transport Energy Statistics|Peter Zahn###
(35960, 35960)
 The universal limit of S is given by1.88 in units of k<missing VAR>B/e<missing VAR>, which is about 160mu V/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 16, ',', 7],[276.0, 96, ',', 7],[152.0, 3, 'times', 4],[57.0, 1.11, ',', 1]

B
###Universal Limits of Thermopower and Figure of Merit from Transport Energy Statistics|Peter Zahn###
(35978, 35978)
 The universal limit of S is given by1.88 in units of k<missing VAR>B/e<missing VAR>, which is about 160mu V/K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 16, ',', 7],[294.0, 96, ',', 7],[170.0, 3, 'times', 4],[39.0, 1.11, ',', 1]

V/K
###Universal Limits of Thermopower and Figure of Merit from Transport Energy Statistics|Peter Zahn###
(35992, 35994)
 The universal limit of S is given by1.88 in units of k<missing VAR>B/e<missing VAR>, which is about 160mu V/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[311.0, 16, ',', 7],[308.0, 96, ',', 7],[184.0, 3, 'times', 4],[23.0, 1.11, ',', 1]

S
###Giant thermopower and figure of merit in single-molecule devices|C. M. Finch,V. M. García-Suárez,C. J. Lambert###
(36087, 36087)
 We present a study of the thermopower S and the dimensionless figure ofmerit ZT in molecules sandwiched between gold electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Giant thermopower and figure of merit in single-molecule devices|C. M. Finch,V. M. García-Suárez,C. J. Lambert###
(36191, 36191)
 We show that formolecules with side groups, the shape of the transmission coefficient can bedramatically modified by Fano resonances near the Fermi energy, which can betuned to produce huge increases in S and ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Enhancement of thermoelectric figure-of-merit of Graphene upon BN-doping and sample length reduction|Ransell D'Souza,Sugata Mukherjee###
(36289, 36290)
Enhancement of thermoelectric figure-of-merit of Graphene upon BN-doping and sample length reduction.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Enhancement of thermoelectric figure-of-merit of Graphene upon BN-doping and sample length reduction|Ransell D'Souza,Sugata Mukherjee###
(36360, 36360)
 Using first-principles density functional perturbation theory basedcalculations of length-dependent lattice thermal conductivity (k<missing VAR>appa L<missing VAR> ) andusing our previously calculated results (Phys Rev B 95 085435 (2017)) ofelectrical transport, we report results of thermoelectric figure-of-merit (ZT )of monolayer and bilayer Graphene.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Resonant thermoelectric transport in atomic chains with Fano defects|J. Eduardo González,Vicenta Sánchez,Chumin Wang###
(36619, 36619)
 In this work, we analytically found anenhanced thermoelectric figure-of-merit (ZT) in periodic atomic chains withFano defects, compared to those without such defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Resonant thermoelectric transport in atomic chains with Fano defects|J. Eduardo González,Vicenta Sánchez,Chumin Wang###
(36691, 36691)
 We further studyself-assembled D<missing VAR>NA-like systems with periodic and quasiperiodically placed Fanodefects by using a real-space renormalization method developed for theKubo-Greenwood formula, in which tight-binding and Born models are respectivelyused for the electric and lattice thermal conductivities.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Enhanced thermoelectric performance of twisted bilayer graphene nanoribbons junction|Shuo Deng,Xiang Cai,Yan Zhang,Lijie Li###
(37145, 37145)
 We investigate the electron transport and thermoelectric property of twistedbilayer graphene nanoribbon junction (TBGNRJ) in 0o<missing VAR>, 21.8o<missing VAR>, 38.2o<missing VAR> and60o<missing VAR> rotation angles by first principles calculation with Landauer-Buttikerand Boltzmann theories.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.2, 'V', 1],[121.0, 2.0, ',', 2],[123.0, 2.7, 'and', 2],[124.0, 6.1, 'can', 2],[143.0, 300, 'K', 2]

N
###Enhanced thermoelectric performance of twisted bilayer graphene nanoribbons junction|Shuo Deng,Xiang Cai,Yan Zhang,Lijie Li###
(37206, 37206)
 It is found that TBGNR<missing VAR>Js exhibit negative differentialresistance (NDR) in 21.8o<missing VAR> and 38.2o<missing VAR> rotation angles under pm 0.2 Vbias voltage.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.2, 'V', 0],[60.0, 2.0, ',', 1],[62.0, 2.7, 'and', 1],[63.0, 6.1, 'can', 1],[82.0, 300, 'K', 1]

N
###Enhanced thermoelectric performance of twisted bilayer graphene nanoribbons junction|Shuo Deng,Xiang Cai,Yan Zhang,Lijie Li###
(37220, 37220)
 It is found that TBGNR<missing VAR>Js exhibit negative differentialresistance (NDR) in 21.8o<missing VAR> and 38.2o<missing VAR> rotation angles under pm 0.2 Vbias voltage.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.2, 'V', 0],[46.0, 2.0, ',', 1],[48.0, 2.7, 'and', 1],[49.0, 6.1, 'can', 1],[68.0, 300, 'K', 1]

N
###Enhanced thermoelectric performance of twisted bilayer graphene nanoribbons junction|Shuo Deng,Xiang Cai,Yan Zhang,Lijie Li###
(37306, 37306)
 The outstanding ZT values ofTBGNR<missing VAR>Js are interpreted as the combination of the reduced thermal conductivityand enhanced electrical conductivity at optimized angles.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.2, 'V', 2],[40.0, 2.0, ',', 1],[38.0, 2.7, 'and', 1],[37.0, 6.1, 'can', 1],[18.0, 300, 'K', 1]

(COP)
###Effect of Thermoelectric Cooling in Nanoscale Junctions|Yu-Shen Liu,Bailey C. Hsu,Yu-Chang Chen###
(38047, 38051)
Using first-principles approaches, we investigate the working conditions andthe coefficient of performance (COP) of an atomic-scale electronic refrigeratorwhere the effects of phonons<missing VAR> thermal current and local heating are included.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Effect of Thermoelectric Cooling in Nanoscale Junctions|Yu-Shen Liu,Bailey C. Hsu,Yu-Chang Chen###
(38166, 38166)
 Compared with the bulkthermoelectric system with the overwhelmingly irreversible Joule heating, the4-Al atomic refrigerator has a higher efficiency than a bulk thermoelectricrefrigerator with the same ZT due to suppressed local heating via thequasi-ballistic electron transport and small driving voltages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag2
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38300, 38301)
Quaternary compounds Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) as novel potential thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 1.22, 'at', 4],[232.0, 900, 'K', 4],[278.0, 1.2, ',', 4],[280.0, 1.13, 'and', 4],[282.0, 1.12, ',', 4]

YSe4
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38303, 38305)
Quaternary compounds Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) as novel potential thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 1.22, 'at', 4],[228.0, 900, 'K', 4],[274.0, 1.2, ',', 4],[276.0, 1.13, 'and', 4],[278.0, 1.12, ',', 4]

Ba
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38309, 38309)
Quaternary compounds Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) as novel potential thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 1.22, 'at', 4],[224.0, 900, 'K', 4],[270.0, 1.2, ',', 4],[272.0, 1.13, 'and', 4],[274.0, 1.12, ',', 4]

Sr
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38312, 38312)
Quaternary compounds Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) as novel potential thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 1.22, 'at', 4],[221.0, 900, 'K', 4],[267.0, 1.2, ',', 4],[269.0, 1.13, 'and', 4],[271.0, 1.12, ',', 4]

YSn
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38315, 38316)
Quaternary compounds Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) as novel potential thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 1.22, 'at', 4],[217.0, 900, 'K', 4],[263.0, 1.2, ',', 4],[265.0, 1.13, 'and', 4],[267.0, 1.12, ',', 4]

Ge
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38319, 38319)
Quaternary compounds Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) as novel potential thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 1.22, 'at', 4],[214.0, 900, 'K', 4],[260.0, 1.2, ',', 4],[262.0, 1.13, 'and', 4],[264.0, 1.12, ',', 4]

Cu2ZnSnSe4
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38349, 38354)
 Experimental results have shown that the quaternary compound Cu2ZnSnSe4 is anexcellent thermoelectric material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 1.22, 'at', 3],[179.0, 900, 'K', 3],[225.0, 1.2, ',', 3],[227.0, 1.13, 'and', 3],[229.0, 1.12, ',', 3]

Cu2ZnSnSe4
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38397, 38402)
 This inspires us to seek the otherquaternary compounds with similar chemical formula to Cu2ZnSnSe4 asthermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1.22, 'at', 2],[131.0, 900, 'K', 2],[177.0, 1.2, ',', 2],[179.0, 1.13, 'and', 2],[181.0, 1.12, ',', 2]

In
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38412, 38412)
 In this paper, we use the first-principle method tosystematically explore the electronic and phonon structures, mechanical,thermal and thermoelectric properties of p<missing VAR>- and n<missing VAR>-type Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr;YSn, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 1.22, 'at', 1],[121.0, 900, 'K', 1],[167.0, 1.2, ',', 1],[169.0, 1.13, 'and', 1],[171.0, 1.12, ',', 1]

Ag2
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38472, 38473)
 In this paper, we use the first-principle method tosystematically explore the electronic and phonon structures, mechanical,thermal and thermoelectric properties of p<missing VAR>- and n<missing VAR>-type Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr;YSn, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 1.22, 'at', 1],[60.0, 900, 'K', 1],[106.0, 1.2, ',', 1],[108.0, 1.13, 'and', 1],[110.0, 1.12, ',', 1]

YSe4
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38475, 38477)
 In this paper, we use the first-principle method tosystematically explore the electronic and phonon structures, mechanical,thermal and thermoelectric properties of p<missing VAR>- and n<missing VAR>-type Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr;YSn, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1.22, 'at', 1],[56.0, 900, 'K', 1],[102.0, 1.2, ',', 1],[104.0, 1.13, 'and', 1],[106.0, 1.12, ',', 1]

Ba
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38481, 38481)
 In this paper, we use the first-principle method tosystematically explore the electronic and phonon structures, mechanical,thermal and thermoelectric properties of p<missing VAR>- and n<missing VAR>-type Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr;YSn, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 1.22, 'at', 1],[52.0, 900, 'K', 1],[98.0, 1.2, ',', 1],[100.0, 1.13, 'and', 1],[102.0, 1.12, ',', 1]

Sr
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38484, 38484)
 In this paper, we use the first-principle method tosystematically explore the electronic and phonon structures, mechanical,thermal and thermoelectric properties of p<missing VAR>- and n<missing VAR>-type Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr;YSn, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1.22, 'at', 1],[49.0, 900, 'K', 1],[95.0, 1.2, ',', 1],[97.0, 1.13, 'and', 1],[99.0, 1.12, ',', 1]

YSn
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38488, 38489)
 In this paper, we use the first-principle method tosystematically explore the electronic and phonon structures, mechanical,thermal and thermoelectric properties of p<missing VAR>- and n<missing VAR>-type Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr;YSn, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1.22, 'at', 1],[44.0, 900, 'K', 1],[90.0, 1.2, ',', 1],[92.0, 1.13, 'and', 1],[94.0, 1.12, ',', 1]

Ge
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38492, 38492)
 In this paper, we use the first-principle method tosystematically explore the electronic and phonon structures, mechanical,thermal and thermoelectric properties of p<missing VAR>- and n<missing VAR>-type Ag2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr;YSn, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1.22, 'at', 1],[41.0, 900, 'K', 1],[87.0, 1.2, ',', 1],[89.0, 1.13, 'and', 1],[91.0, 1.12, ',', 1]

Ag2SrGeSe4
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38517, 38522)
 It is found that the ZT maximum for n<missing VAR>-type Ag2SrGeSe4 can reach upto 1.22 at 900 K, and those for p<missing VAR>-type Ag2SrSnSe4, Ag2SrGeSe4 and Ag2BaSnSe4can reach up to 1.20, 1.13 and 1.12, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0.5,0,0,0,0.125,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1.22, 'at', 0],[11.0, 900, 'K', 0],[57.0, 1.2, ',', 0],[59.0, 1.13, 'and', 0],[61.0, 1.12, ',', 0]

Ag2SrSnSe4
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38546, 38551)
 It is found that the ZT maximum for n<missing VAR>-type Ag2SrGeSe4 can reach upto 1.22 at 900 K, and those for p<missing VAR>-type Ag2SrSnSe4, Ag2SrGeSe4 and Ag2BaSnSe4can reach up to 1.20, 1.13 and 1.12, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.125,0,0,0,0,0,0,0,0,0.25,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1.22, 'at', 0],[13.0, 900, 'K', 0],[28.0, 1.2, ',', 0],[30.0, 1.13, 'and', 0],[32.0, 1.12, ',', 0]

Ag2SrGeSe4
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38554, 38559)
 It is found that the ZT maximum for n<missing VAR>-type Ag2SrGeSe4 can reach upto 1.22 at 900 K, and those for p<missing VAR>-type Ag2SrSnSe4, Ag2SrGeSe4 and Ag2BaSnSe4can reach up to 1.20, 1.13 and 1.12, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0.5,0,0,0,0.125,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1.22, 'at', 0],[21.0, 900, 'K', 0],[20.0, 1.2, ',', 0],[22.0, 1.13, 'and', 0],[24.0, 1.12, ',', 0]

Ag2BaSnSe4
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38563, 38568)
 It is found that the ZT maximum for n<missing VAR>-type Ag2SrGeSe4 can reach upto 1.22 at 900 K, and those for p<missing VAR>-type Ag2SrSnSe4, Ag2SrGeSe4 and Ag2BaSnSe4can reach up to 1.20, 1.13 and 1.12, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.125,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1.22, 'at', 0],[30.0, 900, 'K', 0],[11.0, 1.2, ',', 0],[13.0, 1.13, 'and', 0],[15.0, 1.12, ',', 0]

Ag2
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38602, 38603)
 Our work not only shows thatAg2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) are a kind of potential thermoelectric materials,but also can inspire more theoretical and experimental researches onthermoelectric properties of quaternary compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 1.22, 'at', 1],[69.0, 900, 'K', 1],[23.0, 1.2, ',', 1],[21.0, 1.13, 'and', 1],[19.0, 1.12, ',', 1]

YSe4
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38605, 38607)
 Our work not only shows thatAg2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) are a kind of potential thermoelectric materials,but also can inspire more theoretical and experimental researches onthermoelectric properties of quaternary compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1.22, 'at', 1],[72.0, 900, 'K', 1],[26.0, 1.2, ',', 1],[24.0, 1.13, 'and', 1],[22.0, 1.12, ',', 1]

Ba
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38611, 38611)
 Our work not only shows thatAg2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) are a kind of potential thermoelectric materials,but also can inspire more theoretical and experimental researches onthermoelectric properties of quaternary compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 1.22, 'at', 1],[78.0, 900, 'K', 1],[32.0, 1.2, ',', 1],[30.0, 1.13, 'and', 1],[28.0, 1.12, ',', 1]

Sr
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38614, 38614)
 Our work not only shows thatAg2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) are a kind of potential thermoelectric materials,but also can inspire more theoretical and experimental researches onthermoelectric properties of quaternary compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 1.22, 'at', 1],[81.0, 900, 'K', 1],[35.0, 1.2, ',', 1],[33.0, 1.13, 'and', 1],[31.0, 1.12, ',', 1]

YSn
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38617, 38618)
 Our work not only shows thatAg2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) are a kind of potential thermoelectric materials,but also can inspire more theoretical and experimental researches onthermoelectric properties of quaternary compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 1.22, 'at', 1],[84.0, 900, 'K', 1],[38.0, 1.2, ',', 1],[36.0, 1.13, 'and', 1],[34.0, 1.12, ',', 1]

Ge
###Quaternary compounds Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) as novel potential thermoelectric materials|A. J. Hong,C. L. Yuan,J. M. Liu###
(38621, 38621)
 Our work not only shows thatAg2X<missing VAR>YSe4 (X<missing VAR>Ba, Sr; YSn, Ge) are a kind of potential thermoelectric materials,but also can inspire more theoretical and experimental researches onthermoelectric properties of quaternary compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1.22, 'at', 1],[88.0, 900, 'K', 1],[42.0, 1.2, ',', 1],[40.0, 1.13, 'and', 1],[38.0, 1.12, ',', 1]

Fe
###Thermoelectric signatures of order-parameter symmetries in iron-based superconducting tunnel junctions|Claudio Guarcello,Alessandro Braggio,Francesco Giazotto,Roberta Citro###
(38776, 38776)
 Here, we showthat linear thermoelectric effects in tunnel junctions (T<missing VAR>Js) with Fe-basedsuperconductors, not only address the dominance between particle and holestates, but even provide information about the superconducting order parametersymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 6, 'with', 2],[155.0, 800, ';', 2]

In
###Thermoelectric signatures of order-parameter symmetries in iron-based superconducting tunnel junctions|Claudio Guarcello,Alessandro Braggio,Francesco Giazotto,Roberta Citro###
(38828, 38828)
 In particular, we observe that nodal order parameters present amaximal thermoelectric effect at lower temperatures than for nodeless cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 6, 'with', 1],[103.0, 800, ';', 1]

BCS
###Thermoelectric signatures of order-parameter symmetries in iron-based superconducting tunnel junctions|Claudio Guarcello,Alessandro Braggio,Francesco Giazotto,Roberta Citro###
(38894, 38896)
Finally, we show that superconducting T<missing VAR>Js between iron-based and BCSsuperconductors could provide a thermoelectric efficiency ZT exceeding 6 with alinear Seebeck coefficient around Sapprox 800;mutextV/K at a fewKelvin.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 6, 'with', 0],[35.0, 800, ';', 0]

S
###Thermoelectric signatures of order-parameter symmetries in iron-based superconducting tunnel junctions|Claudio Guarcello,Alessandro Braggio,Francesco Giazotto,Roberta Citro###
(38928, 38928)
Finally, we show that superconducting T<missing VAR>Js between iron-based and BCSsuperconductors could provide a thermoelectric efficiency ZT exceeding 6 with alinear Seebeck coefficient around Sapprox 800;mutextV/K at a fewKelvin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 6, 'with', 0],[3.0, 800, ';', 0]

V/K
###Thermoelectric signatures of order-parameter symmetries in iron-based superconducting tunnel junctions|Claudio Guarcello,Alessandro Braggio,Francesco Giazotto,Roberta Citro###
(38935, 38937)
Finally, we show that superconducting T<missing VAR>Js between iron-based and BCSsuperconductors could provide a thermoelectric efficiency ZT exceeding 6 with alinear Seebeck coefficient around Sapprox 800;mutextV/K at a fewKelvin.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 6, 'with', 0],[4.0, 800, ';', 0]

K
###Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene|Ruixiang Fei,Alireza Faghaninia,Ryan Soklaski,Jia-An Yan,Cynthia Lo,Li Yang###
(39191, 39191)
 This efficiency holds athigh temperatures (700K900K) but quickly diminishes at lower temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 1, 'even', 4],[290.0, 300, 'K', 5]

In
###Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene|Ruixiang Fei,Alireza Faghaninia,Ryan Soklaski,Jia-An Yan,Cynthia Lo,Li Yang###
(39207, 39207)
 Inthis paper, a recently-fabricated two-dimensional (2D) semiconductor calledphosphorene (monolayer black phosphorus) is assessed for its thermoelectriccapabilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 1, 'even', 3],[274.0, 300, 'K', 4]

As
###Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene|Ruixiang Fei,Alireza Faghaninia,Ryan Soklaski,Jia-An Yan,Cynthia Lo,Li Yang###
(39331, 39331)
 As a result, ZT can reach2.5 (the criterion for commercial deployment) along the armchair direction ofphosphorene at T<missing VAR>500K and is greater than 1 even at room temperature givenmoderate doping (2 x<missing VAR> 1016 m<missing VAR>-2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1, 'even', 0],[150.0, 300, 'K', 1]

K
###Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene|Ruixiang Fei,Alireza Faghaninia,Ryan Soklaski,Jia-An Yan,Cynthia Lo,Li Yang###
(39377, 39377)
 As a result, ZT can reach2.5 (the criterion for commercial deployment) along the armchair direction ofphosphorene at T<missing VAR>500K and is greater than 1 even at room temperature givenmoderate doping (2 x<missing VAR> 1016 m<missing VAR>-2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 1, 'even', 0],[104.0, 300, 'K', 1]

I2
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39533, 39534)
Impressive optoelectronic and thermoelectric properties of two-dimensional X<missing VAR>I2 (X<missing VAR>Sn, Si) a first principle study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 2.06, 'eV', 6],[265.0, 4.68, 'eV', 6],[295.0, 600, 'K', 7],[325.0, 1.63, 'eV', 8],[346.0, 4.86, 'eV', 8],[365.0, 0.87, 'at', 9]

Sn
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39538, 39538)
Impressive optoelectronic and thermoelectric properties of two-dimensional X<missing VAR>I2 (X<missing VAR>Sn, Si) a first principle study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 2.06, 'eV', 6],[261.0, 4.68, 'eV', 6],[291.0, 600, 'K', 7],[321.0, 1.63, 'eV', 8],[342.0, 4.86, 'eV', 8],[361.0, 0.87, 'at', 9]

Si
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39541, 39541)
Impressive optoelectronic and thermoelectric properties of two-dimensional X<missing VAR>I2 (X<missing VAR>Sn, Si) a first principle study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 2.06, 'eV', 6],[258.0, 4.68, 'eV', 6],[288.0, 600, 'K', 7],[318.0, 1.63, 'eV', 8],[339.0, 4.86, 'eV', 8],[358.0, 0.87, 'at', 9]

I2
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39669, 39670)
 Here, we have investigated thermoelectric andoptoelectronic properties of X<missing VAR>I2 (X<missing VAR>Sn and Si) monolayers with the help ofdensity functional theory and Boltzmann transport equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2.06, 'eV', 3],[129.0, 4.68, 'eV', 3],[159.0, 600, 'K', 4],[189.0, 1.63, 'eV', 5],[210.0, 4.86, 'eV', 5],[229.0, 0.87, 'at', 6]

Sn
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39674, 39674)
 Here, we have investigated thermoelectric andoptoelectronic properties of X<missing VAR>I2 (X<missing VAR>Sn and Si) monolayers with the help ofdensity functional theory and Boltzmann transport equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2.06, 'eV', 3],[125.0, 4.68, 'eV', 3],[155.0, 600, 'K', 4],[185.0, 1.63, 'eV', 5],[206.0, 4.86, 'eV', 5],[225.0, 0.87, 'at', 6]

Si
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39678, 39678)
 Here, we have investigated thermoelectric andoptoelectronic properties of X<missing VAR>I2 (X<missing VAR>Sn and Si) monolayers with the help ofdensity functional theory and Boltzmann transport equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2.06, 'eV', 3],[121.0, 4.68, 'eV', 3],[151.0, 600, 'K', 4],[181.0, 1.63, 'eV', 5],[202.0, 4.86, 'eV', 5],[221.0, 0.87, 'at', 6]

SnI2
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39752, 39754)
 Excellentthermoelectric and optical properties have been obtained for both SnI2 andSiI2 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2.06, 'eV', 1],[45.0, 4.68, 'eV', 1],[75.0, 600, 'K', 2],[105.0, 1.63, 'eV', 3],[126.0, 4.86, 'eV', 3],[145.0, 0.87, 'at', 4]

SiI2
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39759, 39761)
 Excellentthermoelectric and optical properties have been obtained for both SnI2 andSiI2 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2.06, 'eV', 1],[38.0, 4.68, 'eV', 1],[68.0, 600, 'K', 2],[98.0, 1.63, 'eV', 3],[119.0, 4.86, 'eV', 3],[138.0, 0.87, 'at', 4]

SnI2
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39768, 39770)
 For SnI2 an indirect bandgap of 2.06 eV was observed andthe absorption peak was found at 4.68 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2.06, 'eV', 0],[29.0, 4.68, 'eV', 0],[59.0, 600, 'K', 1],[89.0, 1.63, 'eV', 2],[110.0, 4.86, 'eV', 2],[129.0, 0.87, 'at', 3]

SiI2
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39843, 39845)
 Similarly, for SiI2 acomparatively low indirect bandgap of 1.63 eV was observed, and the absorptionpeak was obtained at 4.86 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2.06, 'eV', 2],[44.0, 4.68, 'eV', 2],[14.0, 600, 'K', 1],[14.0, 1.63, 'eV', 0],[35.0, 4.86, 'eV', 0],[54.0, 0.87, 'at', 1]

SiI2
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39894, 39896)
 The calculated ZT product for SiI2 was 0.87 at600K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2.06, 'eV', 3],[95.0, 4.68, 'eV', 3],[65.0, 600, 'K', 2],[35.0, 1.63, 'eV', 1],[14.0, 4.86, 'eV', 1],[3.0, 0.87, 'at', 0]

K
###Impressive optoelectronic and thermoelectric properties of two-dimensional XI$_2$ (X=Sn, Si): a first principle study|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(39903, 39903)
 The calculated ZT product for SiI2 was 0.87 at600K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 2.06, 'eV', 3],[104.0, 4.68, 'eV', 3],[74.0, 600, 'K', 2],[44.0, 1.63, 'eV', 1],[23.0, 4.86, 'eV', 1],[4.0, 0.87, 'at', 0]

In
###Effects of intervalley scatterings in thermoelectric performance of band-convergent antimonene|Yu Wu,Bowen Hou,Congcong Ma,Jiang Cao,Ying Chen,Zixuan Lu,Haodong Mei,Hezhu Shao,Yuanfeng Xu,Heyuan Zhu,Zhilai Fang,Rongjun Zhang,Hao Zhang###
(40075, 40075)
 In this work, we investigate the (thermo)electric properties ofnon-polar monolayer beta- and alpha-antimonene considering full mode- andmomentum-resolved electron-phonon interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 0.37, 'in', 3],[264.0, 5.7, 'comparing', 3]

SiS2
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40496, 40498)
Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 500, 'K', 3]

SiSe2
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40502, 40504)
Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 500, 'K', 3]

SiS2
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40599, 40601)
 Here we have carried out a systematic investigation onthermoelectric performance of newly predicted two dimensional (2D)semiconducting SiS2 and SiSe2 monolayers of group IVA-VIA family using densityfunctional theory (DFT) and Boltzmann transport equation (BTE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 500, 'K', 1]

SiSe2
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40605, 40607)
 Here we have carried out a systematic investigation onthermoelectric performance of newly predicted two dimensional (2D)semiconducting SiS2 and SiSe2 monolayers of group IVA-VIA family using densityfunctional theory (DFT) and Boltzmann transport equation (BTE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 500, 'K', 1]

IV
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40615, 40616)
 Here we have carried out a systematic investigation onthermoelectric performance of newly predicted two dimensional (2D)semiconducting SiS2 and SiSe2 monolayers of group IVA-VIA family using densityfunctional theory (DFT) and Boltzmann transport equation (BTE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 500, 'K', 1]

VI
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40619, 40620)
 Here we have carried out a systematic investigation onthermoelectric performance of newly predicted two dimensional (2D)semiconducting SiS2 and SiSe2 monolayers of group IVA-VIA family using densityfunctional theory (DFT) and Boltzmann transport equation (BTE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 500, 'K', 1]

B
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40649, 40649)
 Here we have carried out a systematic investigation onthermoelectric performance of newly predicted two dimensional (2D)semiconducting SiS2 and SiSe2 monolayers of group IVA-VIA family using densityfunctional theory (DFT) and Boltzmann transport equation (BTE).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 500, 'K', 1]

SiS2
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40715, 40717)
 Our computedvalues of lattice thermal conductivity (kph) are ultralow which result veryhigh thermoelectric figure of merit (ZT) value of 0.78 (0.80) at 500K in SiS2(SiSe2) monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 500, 'K', 0]

(SiSe2)
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40720, 40724)
 Our computedvalues of lattice thermal conductivity (kph) are ultralow which result veryhigh thermoelectric figure of merit (ZT) value of 0.78 (0.80) at 500K in SiS2(SiSe2) monolayer.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 500, 'K', 0]

(PF)
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40852, 40855)
 It is also found from our investigation that p<missing VAR>-type doping is moreeffective than n<missing VAR>-type doping to get optimal power factor (PF) and ZT.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 500, 'K', 2]

SiS2
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40880, 40882)
 Ourtheoretical investigation suggests that newly predicted semiconducting SiS2 andSiSe2 monolayers can be very promising thermoelectric materials for fabricationof high efficiency thermoelectric power generator to convert wastage heat intoelectricity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 500, 'K', 3]

SiSe2
###Phonon Coupled Scattering Caused Ultralow Lattice Thermal Conductivity and Its Role in The Remarkable Thermoelectric Performance of Newly Predicted SiS2 and SiSe2 monolayers|Jayanta Bera,Atanu Betal,Satyajit Sahu###
(40887, 40889)
 Ourtheoretical investigation suggests that newly predicted semiconducting SiS2 andSiSe2 monolayers can be very promising thermoelectric materials for fabricationof high efficiency thermoelectric power generator to convert wastage heat intoelectricity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 500, 'K', 3]

Ag2Se
###Realizing high Near-Room-Temperature Thermoelectric Performance in n-type Ag2Se through Rashba Effect and Entropy Engineering|Raju K Biswas,Swapan K Pati###
(40964, 40966)
Realizing high Near-Room-Temperature Thermoelectric Performance in n<missing VAR>-type Ag2Se through Rashba Effect and Entropy Engineering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 2.1, 'at', 3],[179.0, 400, 'K', 3],[367.0, 0.34, 'at', 6],[368.0, 400, 'K', 6]

Ag2Se
###Realizing high Near-Room-Temperature Thermoelectric Performance in n-type Ag2Se through Rashba Effect and Entropy Engineering|Raju K Biswas,Swapan K Pati###
(41046, 41048)
 Generally,pristine Ag2Se exhibits unusual low thermal conductivity along with highelectrical conductivity and Seebeck coefficient, which leads to highthermoelectric performance (n<missing VAR>-type) at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2.1, 'at', 1],[97.0, 400, 'K', 1],[285.0, 0.34, 'at', 4],[286.0, 400, 'K', 4]

Ag2Se0.5Te0.25S0.25
###Realizing high Near-Room-Temperature Thermoelectric Performance in n-type Ag2Se through Rashba Effect and Entropy Engineering|Raju K Biswas,Swapan K Pati###
(41119, 41126)
 Herein, we report apseudoternary phase, Ag2Se0.5Te0.25S0.25, which shows improved thermoelectricperformance (zT  2.1 at 400 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2.1, 'at', 0],[19.0, 400, 'K', 0],[207.0, 0.34, 'at', 3],[208.0, 400, 'K', 3]

Te
###Realizing high Near-Room-Temperature Thermoelectric Performance in n-type Ag2Se through Rashba Effect and Entropy Engineering|Raju K Biswas,Swapan K Pati###
(41182, 41182)
 Density functional theory reveals that theRashba type of spin-dependent band spitting originated because of Te-doping,enhancing carrier mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2.1, 'at', 1],[37.0, 400, 'K', 1],[151.0, 0.34, 'at', 2],[152.0, 400, 'K', 2]

In
###Realizing high Near-Room-Temperature Thermoelectric Performance in n-type Ag2Se through Rashba Effect and Entropy Engineering|Raju K Biswas,Swapan K Pati###
(41272, 41272)
 In fact,locally off-centered S atoms and rising configurational entropy viasubstitution of Te and S atoms in Ag2Se significantly reduce the latticethermal conductivity (klat  0.34 at 400 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2.1, 'at', 3],[127.0, 400, 'K', 3],[61.0, 0.34, 'at', 0],[62.0, 400, 'K', 0]

S
###Realizing high Near-Room-Temperature Thermoelectric Performance in n-type Ag2Se through Rashba Effect and Entropy Engineering|Raju K Biswas,Swapan K Pati###
(41284, 41284)
 In fact,locally off-centered S atoms and rising configurational entropy viasubstitution of Te and S atoms in Ag2Se significantly reduce the latticethermal conductivity (klat  0.34 at 400 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 2.1, 'at', 3],[139.0, 400, 'K', 3],[49.0, 0.34, 'at', 0],[50.0, 400, 'K', 0]

Te
###Realizing high Near-Room-Temperature Thermoelectric Performance in n-type Ag2Se through Rashba Effect and Entropy Engineering|Raju K Biswas,Swapan K Pati###
(41303, 41303)
 In fact,locally off-centered S atoms and rising configurational entropy viasubstitution of Te and S atoms in Ag2Se significantly reduce the latticethermal conductivity (klat  0.34 at 400 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 2.1, 'at', 3],[158.0, 400, 'K', 3],[30.0, 0.34, 'at', 0],[31.0, 400, 'K', 0]

S
###Realizing high Near-Room-Temperature Thermoelectric Performance in n-type Ag2Se through Rashba Effect and Entropy Engineering|Raju K Biswas,Swapan K Pati###
(41307, 41307)
 In fact,locally off-centered S atoms and rising configurational entropy viasubstitution of Te and S atoms in Ag2Se significantly reduce the latticethermal conductivity (klat  0.34 at 400 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 2.1, 'at', 3],[162.0, 400, 'K', 3],[26.0, 0.34, 'at', 0],[27.0, 400, 'K', 0]

Ag2Se
###Realizing high Near-Room-Temperature Thermoelectric Performance in n-type Ag2Se through Rashba Effect and Entropy Engineering|Raju K Biswas,Swapan K Pati###
(41313, 41315)
 In fact,locally off-centered S atoms and rising configurational entropy viasubstitution of Te and S atoms in Ag2Se significantly reduce the latticethermal conductivity (klat  0.34 at 400 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 2.1, 'at', 3],[168.0, 400, 'K', 3],[18.0, 0.34, 'at', 0],[19.0, 400, 'K', 0]

In
###Realizing high Near-Room-Temperature Thermoelectric Performance in n-type Ag2Se through Rashba Effect and Entropy Engineering|Raju K Biswas,Swapan K Pati###
(41338, 41338)
 In order to accurately obtainelectrical as well as thermal transport coefficient, we adopt deformationpotential theory based on Boltzmann transport formalism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 2.1, 'at', 4],[193.0, 400, 'K', 4],[5.0, 0.34, 'at', 1],[4.0, 400, 'K', 1]

SC
###Effects of interdot hopping and Coulomb blockade on the thermoelectric properties of serially coupled quantum dots|David M. -T. Kuo,Y. C. Chang###
(41817, 41818)
 We have theoretically studied the thermoelectric properties of seriallycoupled quantum dots (SCQD) embedded in an insulator matrix connected tometallic electrodes.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effects of interdot hopping and Coulomb blockade on the thermoelectric properties of serially coupled quantum dots|David M. -T. Kuo,Y. C. Chang###
(41843, 41843)
 In the framework of Keldysh Greens<missing VAR> function technique,the Landauer formula of transmission factor is obtained by using the equationof motion method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Effects of interdot hopping and Coulomb blockade on the thermoelectric properties of serially coupled quantum dots|David M. -T. Kuo,Y. C. Chang###
(41954, 41955)
 Based on such analytical expressions of charge and heatcurrents, we calculate the electrical conductance, Seebeck coefficient,electron thermal conductance and figure of merit (ZT) of SCQD in the linearresponse regime.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Effects of interdot hopping and Coulomb blockade on the thermoelectric properties of serially coupled quantum dots|David M. -T. Kuo,Y. C. Chang###
(42066, 42067)
 We also showthat in the absence of phonon thermal conductance, SCQD can reach the Carnotefficiency as tc approaches zero.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Thermoelectricity of Wigner crystal in a periodic potential|O. V. Zhirov,D. L. Shepelyansky###
(42176, 42176)
 At low temperatures the system has sliding and pinnedphases with the Aubry transition between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Thermoelectricity of Wigner crystal in a periodic potential|O. V. Zhirov,D. L. Shepelyansky###
(42253, 42253)
 At the same time the charge and thermal conductivity ofcrystal drop significantly inside this phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(NW)
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42450, 42453)
 To examine thermoelectric (TE) properties of a semiconductor nanowire (NW)network, we propose a theoretical approach mapping the TE network on a two-portnetwork.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42490, 42490)
 In contrast to a conventional single-port (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42588, 42591)
 Using thismodel, numerical simulations are performed for the Bi2Te3 branchednanowire (BNW) and Cayley tree NW (CT<missing VAR>NW) network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(BNW)
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42598, 42602)
 Using thismodel, numerical simulations are performed for the Bi2Te3 branchednanowire (BNW) and Cayley tree NW (CT<missing VAR>NW) network.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NW
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42610, 42611)
 Using thismodel, numerical simulations are performed for the Bi2Te3 branchednanowire (BNW) and Cayley tree NW (CT<missing VAR>NW) network.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42614, 42614)
 Using thismodel, numerical simulations are performed for the Bi2Te3 branchednanowire (BNW) and Cayley tree NW (CT<missing VAR>NW) network.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42617, 42617)
 Using thismodel, numerical simulations are performed for the Bi2Te3 branchednanowire (BNW) and Cayley tree NW (CT<missing VAR>NW) network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BNW
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42670, 42672)
 Specifically, disordered BNW and CT<missing VAR>NW demonstrate an order ofmagnitude higher ZT enhancement compared to their ordered counterparts.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42676, 42676)
 Specifically, disordered BNW and CT<missing VAR>NW demonstrate an order ofmagnitude higher ZT enhancement compared to their ordered counterparts.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NW
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42678, 42679)
 Specifically, disordered BNW and CT<missing VAR>NW demonstrate an order ofmagnitude higher ZT enhancement compared to their ordered counterparts.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42724, 42724)
Formation of preferential TE pathways in CT<missing VAR>NW makes the network effectivelybehave as its BNW counterpart.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NW
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42726, 42727)
Formation of preferential TE pathways in CT<missing VAR>NW makes the network effectivelybehave as its BNW counterpart.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BNW
###Thermoelectric properties of semiconductor nanowire networks|Oleksiy Roslyak,Andrei Piryatinski###
(42744, 42746)
Formation of preferential TE pathways in CT<missing VAR>NW makes the network effectivelybehave as its BNW counterpart.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin and charge caloritronics in bilayer graphene flakes with magnetic contacts|Leonor Chico,P. A. Orellana,L. Rosales,M. Pacheco###
(43355, 43355)
 In fact, thespin ZT can double its value with respect to the charge ZT for a widetemperature range, above 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 300, 'K', 0]

Te
###Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring|M. Pokharel,H. Z. Zhao,M. Koirala,Z. F. Ren,C. Opeil###
(43459, 43459)
Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 200, ',', 2],[77.0, 400, ',', 2],[80.0, 500, ',', 2],[84.0, 600, 'oC', 2],[251.0, 0.022, 'at', 6],[252.0, 100, 'K', 6],[262.0, 62, '%', 6]

FeSb2
###Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring|M. Pokharel,H. Z. Zhao,M. Koirala,Z. F. Ren,C. Opeil###
(43463, 43465)
Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 200, ',', 2],[71.0, 400, ',', 2],[74.0, 500, ',', 2],[78.0, 600, 'oC', 2],[245.0, 0.022, 'at', 6],[246.0, 100, 'K', 6],[256.0, 62, '%', 6]

Te
###Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring|M. Pokharel,H. Z. Zhao,M. Koirala,Z. F. Ren,C. Opeil###
(43484, 43484)
 We study the thermoelectric properties of Te-doped FeSb2 nanostructuredsamples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 200, ',', 1],[52.0, 400, ',', 1],[55.0, 500, ',', 1],[59.0, 600, 'oC', 1],[226.0, 0.022, 'at', 5],[227.0, 100, 'K', 5],[237.0, 62, '%', 5]

FeSb2
###Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring|M. Pokharel,H. Z. Zhao,M. Koirala,Z. F. Ren,C. Opeil###
(43488, 43490)
 We study the thermoelectric properties of Te-doped FeSb2 nanostructuredsamples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 200, ',', 1],[46.0, 400, ',', 1],[49.0, 500, ',', 1],[53.0, 600, 'oC', 1],[220.0, 0.022, 'at', 5],[221.0, 100, 'K', 5],[231.0, 62, '%', 5]

FeSb1.84Te0.16
###Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring|M. Pokharel,H. Z. Zhao,M. Koirala,Z. F. Ren,C. Opeil###
(43506, 43510)
 Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hotpress method at temperatures of 200, 400, 500, and 600 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6133333333333334,0.05333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 200, ',', 0],[26.0, 400, ',', 0],[29.0, 500, ',', 0],[33.0, 600, 'oC', 0],[200.0, 0.022, 'at', 4],[201.0, 100, 'K', 4],[211.0, 62, '%', 4]

Te
###Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring|M. Pokharel,H. Z. Zhao,M. Koirala,Z. F. Ren,C. Opeil###
(43546, 43546)
 Te-doping enhancesthe dimensionless figure of merit (ZT) on FeSb2 via two mechanisms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 200, ',', 1],[10.0, 400, ',', 1],[7.0, 500, ',', 1],[3.0, 600, 'oC', 1],[164.0, 0.022, 'at', 3],[165.0, 100, 'K', 3],[175.0, 62, '%', 3]

FeSb2
###Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring|M. Pokharel,H. Z. Zhao,M. Koirala,Z. F. Ren,C. Opeil###
(43570, 43572)
 Te-doping enhancesthe dimensionless figure of merit (ZT) on FeSb2 via two mechanisms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 200, ',', 1],[34.0, 400, ',', 1],[31.0, 500, ',', 1],[27.0, 600, 'oC', 1],[138.0, 0.022, 'at', 3],[139.0, 100, 'K', 3],[149.0, 62, '%', 3]

FeSb2
###Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring|M. Pokharel,H. Z. Zhao,M. Koirala,Z. F. Ren,C. Opeil###
(43647, 43649)
 Second, the thermal conductivity, which wasalready reduced in nanostructured FeSb2 samples, is further reduced byincreased point defect scattering through the n<missing VAR> type substitution of Sb site byTe atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 200, ',', 3],[111.0, 400, ',', 3],[108.0, 500, ',', 3],[104.0, 600, 'oC', 3],[61.0, 0.022, 'at', 1],[62.0, 100, 'K', 1],[72.0, 62, '%', 1]

Sb
###Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring|M. Pokharel,H. Z. Zhao,M. Koirala,Z. F. Ren,C. Opeil###
(43683, 43683)
 Second, the thermal conductivity, which wasalready reduced in nanostructured FeSb2 samples, is further reduced byincreased point defect scattering through the n<missing VAR> type substitution of Sb site byTe atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 200, ',', 3],[147.0, 400, ',', 3],[144.0, 500, ',', 3],[140.0, 600, 'oC', 3],[27.0, 0.022, 'at', 1],[28.0, 100, 'K', 1],[38.0, 62, '%', 1]

Te
###Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring|M. Pokharel,H. Z. Zhao,M. Koirala,Z. F. Ren,C. Opeil###
(43690, 43690)
 Second, the thermal conductivity, which wasalready reduced in nanostructured FeSb2 samples, is further reduced byincreased point defect scattering through the n<missing VAR> type substitution of Sb site byTe atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 200, ',', 3],[154.0, 400, ',', 3],[151.0, 500, ',', 3],[147.0, 600, 'oC', 3],[20.0, 0.022, 'at', 1],[21.0, 100, 'K', 1],[31.0, 62, '%', 1]

Te
###Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring|M. Pokharel,H. Z. Zhao,M. Koirala,Z. F. Ren,C. Opeil###
(43739, 43739)
 The combined effect results in a ZT  0.022 at 100 K, an increase of62% over the ZT value for the optimized Te-doped single crystal sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 200, ',', 4],[203.0, 400, ',', 4],[200.0, 500, ',', 4],[196.0, 600, 'oC', 4],[29.0, 0.022, 'at', 0],[28.0, 100, 'K', 0],[18.0, 62, '%', 0]

N
###Bilayer graphene nanoribbons junction with aligned holes exhibiting high ZT values|Shuo Deng,Lijie Li,Paul Rees###
(43855, 43855)
 We investigate the thermoelectric performance of armchair graphene nanoribbon(AGNR), bilayer G<missing VAR>NRs junction (BGNRJ) and BGNRJ with holes (BGNRJ-H) by thefirst principles calculation with non-equilibrium Green function.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 9.65, 'and', 1],[87.0, 5.55, 'at', 1],[88.0, 300, 'K', 1]

B
###Bilayer graphene nanoribbons junction with aligned holes exhibiting high ZT values|Shuo Deng,Lijie Li,Paul Rees###
(43861, 43861)
 We investigate the thermoelectric performance of armchair graphene nanoribbon(AGNR), bilayer G<missing VAR>NRs junction (BGNRJ) and BGNRJ with holes (BGNRJ-H) by thefirst principles calculation with non-equilibrium Green function.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 9.65, 'and', 1],[81.0, 5.55, 'at', 1],[82.0, 300, 'K', 1]

B
###Bilayer graphene nanoribbons junction with aligned holes exhibiting high ZT values|Shuo Deng,Lijie Li,Paul Rees###
(43870, 43870)
 We investigate the thermoelectric performance of armchair graphene nanoribbon(AGNR), bilayer G<missing VAR>NRs junction (BGNRJ) and BGNRJ with holes (BGNRJ-H) by thefirst principles calculation with non-equilibrium Green function.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 9.65, 'and', 1],[72.0, 5.55, 'at', 1],[73.0, 300, 'K', 1]

B
###Bilayer graphene nanoribbons junction with aligned holes exhibiting high ZT values|Shuo Deng,Lijie Li,Paul Rees###
(43881, 43881)
 We investigate the thermoelectric performance of armchair graphene nanoribbon(AGNR), bilayer G<missing VAR>NRs junction (BGNRJ) and BGNRJ with holes (BGNRJ-H) by thefirst principles calculation with non-equilibrium Green function.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 9.65, 'and', 1],[61.0, 5.55, 'at', 1],[62.0, 300, 'K', 1]

H
###Bilayer graphene nanoribbons junction with aligned holes exhibiting high ZT values|Shuo Deng,Lijie Li,Paul Rees###
(43887, 43887)
 We investigate the thermoelectric performance of armchair graphene nanoribbon(AGNR), bilayer G<missing VAR>NRs junction (BGNRJ) and BGNRJ with holes (BGNRJ-H) by thefirst principles calculation with non-equilibrium Green function.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 9.65, 'and', 1],[55.0, 5.55, 'at', 1],[56.0, 300, 'K', 1]

B
###Bilayer graphene nanoribbons junction with aligned holes exhibiting high ZT values|Shuo Deng,Lijie Li,Paul Rees###
(43923, 43923)
 It is foundthat the BGNRJ-H exhibits high ZT values of 9.65 and 5.55 at 300K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 9.65, 'and', 0],[19.0, 5.55, 'at', 0],[20.0, 300, 'K', 0]

H
###Bilayer graphene nanoribbons junction with aligned holes exhibiting high ZT values|Shuo Deng,Lijie Li,Paul Rees###
(43929, 43929)
 It is foundthat the BGNRJ-H exhibits high ZT values of 9.65 and 5.55 at 300K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 9.65, 'and', 0],[13.0, 5.55, 'at', 0],[14.0, 300, 'K', 0]

W
###Bilayer graphene nanoribbons junction with aligned holes exhibiting high ZT values|Shuo Deng,Lijie Li,Paul Rees###
(44019, 44019)
 The low thermal conductance comes from the van der waals (vdW)interaction between two graphene layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 9.65, 'and', 2],[77.0, 5.55, 'at', 2],[76.0, 300, 'K', 2]

B
###Bilayer graphene nanoribbons junction with aligned holes exhibiting high ZT values|Shuo Deng,Lijie Li,Paul Rees###
(44095, 44095)
 It isfound from analysis results that the electron transmission of the BGNRJ-H ismuch stronger than a normal BGNRJ, which gives rise to the higher electricalconductance and outstanding ZT values.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 9.65, 'and', 4],[153.0, 5.55, 'at', 4],[152.0, 300, 'K', 4]

H
###Bilayer graphene nanoribbons junction with aligned holes exhibiting high ZT values|Shuo Deng,Lijie Li,Paul Rees###
(44101, 44101)
 It isfound from analysis results that the electron transmission of the BGNRJ-H ismuch stronger than a normal BGNRJ, which gives rise to the higher electricalconductance and outstanding ZT values.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 9.65, 'and', 4],[159.0, 5.55, 'at', 4],[158.0, 300, 'K', 4]

B
###Bilayer graphene nanoribbons junction with aligned holes exhibiting high ZT values|Shuo Deng,Lijie Li,Paul Rees###
(44116, 44116)
 It isfound from analysis results that the electron transmission of the BGNRJ-H ismuch stronger than a normal BGNRJ, which gives rise to the higher electricalconductance and outstanding ZT values.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 9.65, 'and', 4],[174.0, 5.55, 'at', 4],[173.0, 300, 'K', 4]

In
###Thermoelectrics properties of two-dimensional materials with combination of linear and nonlinear band structures|Andri Darmawan,Edi Suprayoga,Ahmad R. T. Nugraha,Abdullah A. AlShaikhi###
(44268, 44268)
 In the three-band model, we find thatcombinations of Dirac bands with a heavy nonlinear band, either a parabolic ora pudding-mold band, does not give much difference in their TE performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na0.74CoO2
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44584, 44588)
Exploring the possibility of enhancing the figure-of-merit ( > 2) of Na0.74CoO2 A combined experimental and theoretical study.
Featurization terminated normally.
0,0,0,0,0,0,0,0.53475935828877,0,0,0.1978609625668449,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.267379679144385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 64, 'to', 3],[211.0, 2.2, 'W', 5],[218.0, 300, 'K', 5],[252.0, 2.6, 'W', 6],[268.0, 620, 'K', 6],[281.0, 2.4, 'W', 6],[389.0, 0.67, 'at', 8],[390.0, 1200, 'K', 8],[500.0, 2.7, 'at', 10],[501.0, 1200, 'K', 10],[612.0, 11, '%', 12],[635.0, 300, 'K', 12],[638.0, 1200, 'K', 12]

Na0.74CoO2
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44683, 44687)
Here, we present a combined experimental and theoretical study of TE propertiesof Na0.74CoO2 compound in high-temperature region.
Featurization terminated normally.
0,0,0,0,0,0,0,0.53475935828877,0,0,0.1978609625668449,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.267379679144385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 64, 'to', 1],[112.0, 2.2, 'W', 3],[119.0, 300, 'K', 3],[153.0, 2.6, 'W', 4],[169.0, 620, 'K', 4],[182.0, 2.4, 'W', 4],[290.0, 0.67, 'at', 6],[291.0, 1200, 'K', 6],[401.0, 2.7, 'at', 8],[402.0, 1200, 'K', 8],[513.0, 11, '%', 10],[536.0, 300, 'K', 10],[539.0, 1200, 'K', 10]

(S)
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44709, 44711)
 The experimentalSeebeck coefficient (S) is found to vary from 64 to 118 muV/K in thetemperature range 300-620 K.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 64, 'to', 0],[88.0, 2.2, 'W', 2],[95.0, 300, 'K', 2],[129.0, 2.6, 'W', 3],[145.0, 620, 'K', 3],[158.0, 2.4, 'W', 3],[266.0, 0.67, 'at', 5],[267.0, 1200, 'K', 5],[377.0, 2.7, 'at', 7],[378.0, 1200, 'K', 7],[489.0, 11, '%', 9],[512.0, 300, 'K', 9],[515.0, 1200, 'K', 9]

V/K
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44727, 44729)
 The experimentalSeebeck coefficient (S) is found to vary from 64 to 118 muV/K in thetemperature range 300-620 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[5.0, 64, 'to', 0],[70.0, 2.2, 'W', 2],[77.0, 300, 'K', 2],[111.0, 2.6, 'W', 3],[127.0, 620, 'K', 3],[140.0, 2.4, 'W', 3],[248.0, 0.67, 'at', 5],[249.0, 1200, 'K', 5],[359.0, 2.7, 'at', 7],[360.0, 1200, 'K', 7],[471.0, 11, '%', 9],[494.0, 300, 'K', 9],[497.0, 1200, 'K', 9]

K
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44744, 44744)
 The experimentalSeebeck coefficient (S) is found to vary from 64 to 118 muV/K in thetemperature range 300-620 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 64, 'to', 0],[55.0, 2.2, 'W', 2],[62.0, 300, 'K', 2],[96.0, 2.6, 'W', 3],[112.0, 620, 'K', 3],[125.0, 2.4, 'W', 3],[233.0, 0.67, 'at', 5],[234.0, 1200, 'K', 5],[344.0, 2.7, 'at', 7],[345.0, 1200, 'K', 7],[456.0, 11, '%', 9],[479.0, 300, 'K', 9],[482.0, 1200, 'K', 9]

S
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44755, 44755)
 The positive values of S are indicating thedominating p<missing VAR>-type behaviour of the compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 64, 'to', 1],[44.0, 2.2, 'W', 1],[51.0, 300, 'K', 1],[85.0, 2.6, 'W', 2],[101.0, 620, 'K', 2],[114.0, 2.4, 'W', 2],[222.0, 0.67, 'at', 4],[223.0, 1200, 'K', 4],[333.0, 2.7, 'at', 6],[334.0, 1200, 'K', 6],[445.0, 11, '%', 8],[468.0, 300, 'K', 8],[471.0, 1200, 'K', 8]

K
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44803, 44803)
 The observed value of thermalconductivity (kappa) is sim 2.2 W/m<missing VAR>-K at 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 64, 'to', 2],[4.0, 2.2, 'W', 0],[3.0, 300, 'K', 0],[37.0, 2.6, 'W', 1],[53.0, 620, 'K', 1],[66.0, 2.4, 'W', 1],[174.0, 0.67, 'at', 3],[175.0, 1200, 'K', 3],[285.0, 2.7, 'at', 5],[286.0, 1200, 'K', 5],[397.0, 11, '%', 7],[420.0, 300, 'K', 7],[423.0, 1200, 'K', 7]

In
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44809, 44809)
 In the temperature region300-430 K, the value of kappa increases up to sim 2.6 W/m<missing VAR>-K and thendecreases slowly till 620 K with the corresponding value of sim 2.4 W/m<missing VAR>-K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 64, 'to', 3],[10.0, 2.2, 'W', 1],[3.0, 300, 'K', 1],[31.0, 2.6, 'W', 0],[47.0, 620, 'K', 0],[60.0, 2.4, 'W', 0],[168.0, 0.67, 'at', 2],[169.0, 1200, 'K', 2],[279.0, 2.7, 'at', 4],[280.0, 1200, 'K', 4],[391.0, 11, '%', 6],[414.0, 300, 'K', 6],[417.0, 1200, 'K', 6]

K
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44822, 44822)
 In the temperature region300-430 K, the value of kappa increases up to sim 2.6 W/m<missing VAR>-K and thendecreases slowly till 620 K with the corresponding value of sim 2.4 W/m<missing VAR>-K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 64, 'to', 3],[23.0, 2.2, 'W', 1],[16.0, 300, 'K', 1],[18.0, 2.6, 'W', 0],[34.0, 620, 'K', 0],[47.0, 2.4, 'W', 0],[155.0, 0.67, 'at', 2],[156.0, 1200, 'K', 2],[266.0, 2.7, 'at', 4],[267.0, 1200, 'K', 4],[378.0, 11, '%', 6],[401.0, 300, 'K', 6],[404.0, 1200, 'K', 6]

K
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44844, 44844)
 In the temperature region300-430 K, the value of kappa increases up to sim 2.6 W/m<missing VAR>-K and thendecreases slowly till 620 K with the corresponding value of sim 2.4 W/m<missing VAR>-K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 64, 'to', 3],[45.0, 2.2, 'W', 1],[38.0, 300, 'K', 1],[4.0, 2.6, 'W', 0],[12.0, 620, 'K', 0],[25.0, 2.4, 'W', 0],[133.0, 0.67, 'at', 2],[134.0, 1200, 'K', 2],[244.0, 2.7, 'at', 4],[245.0, 1200, 'K', 4],[356.0, 11, '%', 6],[379.0, 300, 'K', 6],[382.0, 1200, 'K', 6]

K
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44873, 44873)
 In the temperature region300-430 K, the value of kappa increases up to sim 2.6 W/m<missing VAR>-K and thendecreases slowly till 620 K with the corresponding value of sim 2.4 W/m<missing VAR>-K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 64, 'to', 3],[74.0, 2.2, 'W', 1],[67.0, 300, 'K', 1],[33.0, 2.6, 'W', 0],[17.0, 620, 'K', 0],[4.0, 2.4, 'W', 0],[104.0, 0.67, 'at', 2],[105.0, 1200, 'K', 2],[215.0, 2.7, 'at', 4],[216.0, 1200, 'K', 4],[327.0, 11, '%', 6],[350.0, 300, 'K', 6],[353.0, 1200, 'K', 6]

U
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44938, 44938)
We have also carried out the theoretical calculations and the best matchingbetween experimental and calculated values of transport properties are observedin spin-polarized calculation within DFT+textitU by chosen textitU  4e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 64, 'to', 4],[139.0, 2.2, 'W', 2],[132.0, 300, 'K', 2],[98.0, 2.6, 'W', 1],[82.0, 620, 'K', 1],[69.0, 2.4, 'W', 1],[39.0, 0.67, 'at', 1],[40.0, 1200, 'K', 1],[150.0, 2.7, 'at', 3],[151.0, 1200, 'K', 3],[262.0, 11, '%', 5],[285.0, 300, 'K', 5],[288.0, 1200, 'K', 5]

U
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44945, 44945)
We have also carried out the theoretical calculations and the best matchingbetween experimental and calculated values of transport properties are observedin spin-polarized calculation within DFT+textitU by chosen textitU  4e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 64, 'to', 4],[146.0, 2.2, 'W', 2],[139.0, 300, 'K', 2],[105.0, 2.6, 'W', 1],[89.0, 620, 'K', 1],[76.0, 2.4, 'W', 1],[32.0, 0.67, 'at', 1],[33.0, 1200, 'K', 1],[143.0, 2.7, 'at', 3],[144.0, 1200, 'K', 3],[255.0, 11, '%', 5],[278.0, 300, 'K', 5],[281.0, 1200, 'K', 5]

V
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(44952, 44952)
We have also carried out the theoretical calculations and the best matchingbetween experimental and calculated values of transport properties are observedin spin-polarized calculation within DFT+textitU by chosen textitU  4e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 64, 'to', 4],[153.0, 2.2, 'W', 2],[146.0, 300, 'K', 2],[112.0, 2.6, 'W', 1],[96.0, 620, 'K', 1],[83.0, 2.4, 'W', 1],[25.0, 0.67, 'at', 1],[26.0, 1200, 'K', 1],[136.0, 2.7, 'at', 3],[137.0, 1200, 'K', 3],[248.0, 11, '%', 5],[271.0, 300, 'K', 5],[274.0, 1200, 'K', 5]

Na0.74CoO2
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(45155, 45159)
Using these temperature-dependent ZT values, we have calculated the maximumpossible values of efficiency (eta) of thermoelectric generator (TEG) madeby p<missing VAR> and n<missing VAR>-type Na0.74CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.53475935828877,0,0,0.1978609625668449,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.267379679144385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[433.0, 64, 'to', 8],[356.0, 2.2, 'W', 6],[349.0, 300, 'K', 6],[315.0, 2.6, 'W', 5],[299.0, 620, 'K', 5],[286.0, 2.4, 'W', 5],[178.0, 0.67, 'at', 3],[177.0, 1200, 'K', 3],[67.0, 2.7, 'at', 1],[66.0, 1200, 'K', 1],[41.0, 11, '%', 1],[64.0, 300, 'K', 1],[67.0, 1200, 'K', 1]

Na0.74CoO2
###Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na$_{0.74}$CoO$_{2}$: A combined experimental and theoretical study|Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(45252, 45256)
 Such high valuesof ZT and efficiency suggest that Na0.74CoO2 can be used as apotential candidate for high-temperature TE applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.53475935828877,0,0,0.1978609625668449,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.267379679144385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[530.0, 64, 'to', 10],[453.0, 2.2, 'W', 8],[446.0, 300, 'K', 8],[412.0, 2.6, 'W', 7],[396.0, 620, 'K', 7],[383.0, 2.4, 'W', 7],[275.0, 0.67, 'at', 5],[274.0, 1200, 'K', 5],[164.0, 2.7, 'at', 3],[163.0, 1200, 'K', 3],[52.0, 11, '%', 1],[29.0, 300, 'K', 1],[26.0, 1200, 'K', 1]

N
###First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes|Branislav K. Nikolic,Kamal K. Saha,Troels Markussen,Kristian S. Thygesen###
(45346, 45346)
 We overview nonequilibrium Green function combined with density functionaltheory (NEGF-DFT) modeling of independent electron and phonon transport innanojunctions with applications focused on a new class of thermoelectricdevices where a single molecule is attached to two metallic zigzag graphenenanoribbons (ZGNRs) via highly transparent contacts.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 0.5, '<', 3]

F
###First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes|Branislav K. Nikolic,Kamal K. Saha,Troels Markussen,Kristian S. Thygesen###
(45349, 45349)
 We overview nonequilibrium Green function combined with density functionaltheory (NEGF-DFT) modeling of independent electron and phonon transport innanojunctions with applications focused on a new class of thermoelectricdevices where a single molecule is attached to two metallic zigzag graphenenanoribbons (ZGNRs) via highly transparent contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 0.5, '<', 3]

N
###First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes|Branislav K. Nikolic,Kamal K. Saha,Troels Markussen,Kristian S. Thygesen###
(45424, 45424)
 We overview nonequilibrium Green function combined with density functionaltheory (NEGF-DFT) modeling of independent electron and phonon transport innanojunctions with applications focused on a new class of thermoelectricdevices where a single molecule is attached to two metallic zigzag graphenenanoribbons (ZGNRs) via highly transparent contacts.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 0.5, '<', 3]

N
###First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes|Branislav K. Nikolic,Kamal K. Saha,Troels Markussen,Kristian S. Thygesen###
(45458, 45458)
 Such contacts makepossible injection of evanescent wavefunctions from ZGNRs, so that theiroverlap within the molecular region generates a peak in the electronictransmission.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 0.5, '<', 2]

N
###First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes|Branislav K. Nikolic,Kamal K. Saha,Troels Markussen,Kristian S. Thygesen###
(45523, 45523)
 Additionally, the spatial symmetry properties of the transversepropagating states in the ZGNR<missing VAR> electrodes suppress hole-like contributions tothe thermopower.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0.5, '<', 1]

N
###First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes|Branislav K. Nikolic,Kamal K. Saha,Troels Markussen,Kristian S. Thygesen###
(45568, 45568)
 Thus optimized thermopower, together with diminished phononconductance through a ZGNR<missing VAR>/molecule/ZGNR<missing VAR> inhomogeneous structure, yields thethermoelectric figure of merit ZT0.5 at room temperature and 0.5<ZT<2.5 belowliquid nitrogen temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.5, '<', 0]

N
###First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes|Branislav K. Nikolic,Kamal K. Saha,Troels Markussen,Kristian S. Thygesen###
(45575, 45575)
 Thus optimized thermopower, together with diminished phononconductance through a ZGNR<missing VAR>/molecule/ZGNR<missing VAR> inhomogeneous structure, yields thethermoelectric figure of merit ZT0.5 at room temperature and 0.5<ZT<2.5 belowliquid nitrogen temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0.5, '<', 0]

C10
###First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes|Branislav K. Nikolic,Kamal K. Saha,Troels Markussen,Kristian S. Thygesen###
(45724, 45725)
 The reliance on evanescent mode transport andsymmetry of propagating states in the electrodes makes theelectronic-transport-determined power factor in this class of devices largelyinsensitive to the type of sufficiently short conjugated organic molecule,which we demonstrate by showing that both 18-annulene and C10 moleculesandwiched by the two ZGNR<missing VAR> electrodes yield similar thermopower.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.5, '<', 1]

N
###First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes|Branislav K. Nikolic,Kamal K. Saha,Troels Markussen,Kristian S. Thygesen###
(45740, 45740)
 The reliance on evanescent mode transport andsymmetry of propagating states in the electrodes makes theelectronic-transport-determined power factor in this class of devices largelyinsensitive to the type of sufficiently short conjugated organic molecule,which we demonstrate by showing that both 18-annulene and C10 moleculesandwiched by the two ZGNR<missing VAR> electrodes yield similar thermopower.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 0.5, '<', 1]

N
###First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes|Branislav K. Nikolic,Kamal K. Saha,Troels Markussen,Kristian S. Thygesen###
(45890, 45890)
 We also show how often employed Brenner empiricalinteratomic potential for hydrocarbon systems fails to describe phonontransport in our single-molecule nanojunctions when contrasted withfirst-principles results obtained via NEGF-DFT methodology.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 0.5, '<', 3]

F
###First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes|Branislav K. Nikolic,Kamal K. Saha,Troels Markussen,Kristian S. Thygesen###
(45893, 45893)
 We also show how often employed Brenner empiricalinteratomic potential for hydrocarbon systems fails to describe phonontransport in our single-molecule nanojunctions when contrasted withfirst-principles results obtained via NEGF-DFT methodology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 0.5, '<', 3]

Cr
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46087, 46087)
 Here, we investigate spin-dependent TE properties of monolayerchromium pnictides (CrX<missing VAR>, where X<missing VAR>  P, As, Sb, and Bi) using first-principlescalculations of electrons and phonons, along with Boltzmann transport formalismunder energy-dependent relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 500, 'K', 3],[205.0, 0.22, ',', 3],[208.0, 0.12, ',', 3],[265.0, 0.12, ',', 3],[268.0, 0.08, ',', 3],[379.0, 500, 'K', 5],[437.0, 2, 'D', 6]

P
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46096, 46096)
 Here, we investigate spin-dependent TE properties of monolayerchromium pnictides (CrX<missing VAR>, where X<missing VAR>  P, As, Sb, and Bi) using first-principlescalculations of electrons and phonons, along with Boltzmann transport formalismunder energy-dependent relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 500, 'K', 3],[196.0, 0.22, ',', 3],[199.0, 0.12, ',', 3],[256.0, 0.12, ',', 3],[259.0, 0.08, ',', 3],[370.0, 500, 'K', 5],[428.0, 2, 'D', 6]

As
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46099, 46099)
 Here, we investigate spin-dependent TE properties of monolayerchromium pnictides (CrX<missing VAR>, where X<missing VAR>  P, As, Sb, and Bi) using first-principlescalculations of electrons and phonons, along with Boltzmann transport formalismunder energy-dependent relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 500, 'K', 3],[193.0, 0.22, ',', 3],[196.0, 0.12, ',', 3],[253.0, 0.12, ',', 3],[256.0, 0.08, ',', 3],[367.0, 500, 'K', 5],[425.0, 2, 'D', 6]

Sb
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46102, 46102)
 Here, we investigate spin-dependent TE properties of monolayerchromium pnictides (CrX<missing VAR>, where X<missing VAR>  P, As, Sb, and Bi) using first-principlescalculations of electrons and phonons, along with Boltzmann transport formalismunder energy-dependent relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 500, 'K', 3],[190.0, 0.22, ',', 3],[193.0, 0.12, ',', 3],[250.0, 0.12, ',', 3],[253.0, 0.08, ',', 3],[364.0, 500, 'K', 5],[422.0, 2, 'D', 6]

Bi
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46107, 46107)
 Here, we investigate spin-dependent TE properties of monolayerchromium pnictides (CrX<missing VAR>, where X<missing VAR>  P, As, Sb, and Bi) using first-principlescalculations of electrons and phonons, along with Boltzmann transport formalismunder energy-dependent relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 500, 'K', 3],[185.0, 0.22, ',', 3],[188.0, 0.12, ',', 3],[245.0, 0.12, ',', 3],[248.0, 0.08, ',', 3],[359.0, 500, 'K', 5],[417.0, 2, 'D', 6]

Cr
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46156, 46156)
 All the CrX<missing VAR> monolayersare dynamically stable and they also exhibit half metallicity withferromagnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 500, 'K', 2],[136.0, 0.22, ',', 2],[139.0, 0.12, ',', 2],[196.0, 0.12, ',', 2],[199.0, 0.08, ',', 2],[310.0, 500, 'K', 4],[368.0, 2, 'D', 5]

Cr
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46222, 46222)
 Using the spin-valve setup with antiparallel spinconfiguration, the half metallicity and ferromagnetism in monolayer CrX<missing VAR> enablemanipulation of spin degrees of freedom to tune the TE figure of merit (ZT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 500, 'K', 1],[70.0, 0.22, ',', 1],[73.0, 0.12, ',', 1],[130.0, 0.12, ',', 1],[133.0, 0.08, ',', 1],[244.0, 500, 'K', 3],[302.0, 2, 'D', 4]

At
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46261, 46261)
 Atoptimized chemical potential and operating temperature of 500 K, the maximum ZTvalues ( 0.22, 0.12, and 0.09) with the antiparallel spin-valve setup in CrAs,CrSb, and CrBi improve up to almost twice the original values (ZT  0.12, 0.08,and 0.05) without the spin-valve configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 500, 'K', 0],[31.0, 0.22, ',', 0],[34.0, 0.12, ',', 0],[91.0, 0.12, ',', 0],[94.0, 0.08, ',', 0],[205.0, 500, 'K', 2],[263.0, 2, 'D', 3]

CrAs
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46317, 46318)
 Atoptimized chemical potential and operating temperature of 500 K, the maximum ZTvalues ( 0.22, 0.12, and 0.09) with the antiparallel spin-valve setup in CrAs,CrSb, and CrBi improve up to almost twice the original values (ZT  0.12, 0.08,and 0.05) without the spin-valve configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 500, 'K', 0],[25.0, 0.22, ',', 0],[22.0, 0.12, ',', 0],[34.0, 0.12, ',', 0],[37.0, 0.08, ',', 0],[148.0, 500, 'K', 2],[206.0, 2, 'D', 3]

CrSb
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46322, 46323)
 Atoptimized chemical potential and operating temperature of 500 K, the maximum ZTvalues ( 0.22, 0.12, and 0.09) with the antiparallel spin-valve setup in CrAs,CrSb, and CrBi improve up to almost twice the original values (ZT  0.12, 0.08,and 0.05) without the spin-valve configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 500, 'K', 0],[30.0, 0.22, ',', 0],[27.0, 0.12, ',', 0],[29.0, 0.12, ',', 0],[32.0, 0.08, ',', 0],[143.0, 500, 'K', 2],[201.0, 2, 'D', 3]

CrBi
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46328, 46329)
 Atoptimized chemical potential and operating temperature of 500 K, the maximum ZTvalues ( 0.22, 0.12, and 0.09) with the antiparallel spin-valve setup in CrAs,CrSb, and CrBi improve up to almost twice the original values (ZT  0.12, 0.08,and 0.05) without the spin-valve configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 500, 'K', 0],[36.0, 0.22, ',', 0],[33.0, 0.12, ',', 0],[23.0, 0.12, ',', 0],[26.0, 0.08, ',', 0],[137.0, 500, 'K', 2],[195.0, 2, 'D', 3]

CrP
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46379, 46380)
 Only in CrP, which is thelightest species and less spin-polarized among CrX<missing VAR>, the maximum ZT ( 0.34)without the spin-valve configuration is larger than that ( 0.19) with thespin-valve one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 500, 'K', 1],[87.0, 0.22, ',', 1],[84.0, 0.12, ',', 1],[27.0, 0.12, ',', 1],[24.0, 0.08, ',', 1],[86.0, 500, 'K', 1],[144.0, 2, 'D', 2]

Cr
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46404, 46404)
 Only in CrP, which is thelightest species and less spin-polarized among CrX<missing VAR>, the maximum ZT ( 0.34)without the spin-valve configuration is larger than that ( 0.19) with thespin-valve one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 500, 'K', 1],[112.0, 0.22, ',', 1],[109.0, 0.12, ',', 1],[52.0, 0.12, ',', 1],[49.0, 0.08, ',', 1],[62.0, 500, 'K', 1],[120.0, 2, 'D', 2]

Cr
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46473, 46473)
 We also find that, at 500 K, all the CrX<missing VAR> monolayers possessexceptional TE power factors of about 0.02-0.08 W/m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 500, 'K', 2],[181.0, 0.22, ',', 2],[178.0, 0.12, ',', 2],[121.0, 0.12, ',', 2],[118.0, 0.08, ',', 2],[7.0, 500, 'K', 0],[51.0, 2, 'D', 1]

W
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46498, 46498)
 We also find that, at 500 K, all the CrX<missing VAR> monolayers possessexceptional TE power factors of about 0.02-0.08 W/m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 500, 'K', 2],[206.0, 0.22, ',', 2],[203.0, 0.12, ',', 2],[146.0, 0.12, ',', 2],[143.0, 0.08, ',', 2],[32.0, 500, 'K', 0],[26.0, 2, 'D', 1]

K2
###Spin-tunable thermoelectric performance in monolayer chromium pnictides|Melania S. Muntini,Edi Suprayoga,Sasfan A. Wella,Iim Fatimah,Lila Yuwana,Tosawat Seetawan,Adam B. Cahaya,Ahmad R. T. Nugraha,Eddwi H. Hasdeo###
(46502, 46503)
K2, which could be one ofthe best values among 2D conductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 500, 'K', 3],[210.0, 0.22, ',', 3],[207.0, 0.12, ',', 3],[150.0, 0.12, ',', 3],[147.0, 0.08, ',', 3],[36.0, 500, 'K', 1],[21.0, 2, 'D', 0]

SiN
###Electron- and phonon transport in silicon nanowires: an atomistic approach to thermoelectric properties|Troels Markussen,Antti-Pekka Jauho,Mads Brandbyge###
(46679, 46680)
 It is shownthat the average phonon- and electron transmissions through long SiNWscontaining many vacancies can be accurately estimated from the scatteringproperties of the isolated vacancies using a recently proposed averaging method[Phys.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 99, ',', 3],[213.0, 111, '>', 6],[228.0, 2, 'nm', 6]

SiN
###Electron- and phonon transport in silicon nanowires: an atomistic approach to thermoelectric properties|Troels Markussen,Antti-Pekka Jauho,Mads Brandbyge###
(46766, 46767)
 We apply this averaging method to surfacedisordered SiNWs in the diameter range 1-3 nm to compute the thermoelectricfigure of merit, ZT.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 99, ',', 1],[126.0, 111, '>', 2],[141.0, 2, 'nm', 2]

II
###Nonlinear thermoelectricity in point-contacts at pinch-off: a catastrophe aids cooling|Robert S. Whitney###
(47096, 47097)
 The lowest achievabletemperature has a discontinuity, called a fold catastrophe in mathematics, at acritical driving current IIc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Nonlinear thermoelectricity in point-contacts at pinch-off: a catastrophe aids cooling|Robert S. Whitney###
(47103, 47103)
 For I >Ic<missing VAR> one can in principle cool toabsolute zero, when for I<Ic<missing VAR> the lowest temperature is about half the ambienttemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Nonlinear thermoelectricity in point-contacts at pinch-off: a catastrophe aids cooling|Robert S. Whitney###
(47106, 47106)
 For I >Ic<missing VAR> one can in principle cool toabsolute zero, when for I<Ic<missing VAR> the lowest temperature is about half the ambienttemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Nonlinear thermoelectricity in point-contacts at pinch-off: a catastrophe aids cooling|Robert S. Whitney###
(47131, 47131)
 For I >Ic<missing VAR> one can in principle cool toabsolute zero, when for I<Ic<missing VAR> the lowest temperature is about half the ambienttemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Nonlinear thermoelectricity in point-contacts at pinch-off: a catastrophe aids cooling|Robert S. Whitney###
(47133, 47133)
 For I >Ic<missing VAR> one can in principle cool toabsolute zero, when for I<Ic<missing VAR> the lowest temperature is about half the ambienttemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Doping effect on thermoelectric properties of MoS$_2$|Huaihong Guo,Teng Yang,Peng Tao,Zhidong Zhang###
(47306, 47308)
Doping effect on thermoelectric properties of MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 0.3, 'at', 5],[245.0, 700, 'K', 5]

MoS2
###Doping effect on thermoelectric properties of MoS$_2$|Huaihong Guo,Teng Yang,Peng Tao,Zhidong Zhang###
(47325, 47327)
 We systematically study thermoelectric properties of layered MoS2 bydoping, based on Boltzmann transport theory and first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 0.3, 'at', 4],[226.0, 700, 'K', 4]

(PF)
###Doping effect on thermoelectric properties of MoS$_2$|Huaihong Guo,Teng Yang,Peng Tao,Zhidong Zhang###
(47410, 47413)
We obtain optimal doping region (around 1019 cm-3) by looking closelyto the temperature and doping level dependent thermopower, electricalconductivity, power factor (PF) and ultimately figure of merit (ZT) coefficientalong in-plane and cross-plane directions.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.3, 'at', 3],[140.0, 700, 'K', 3]

MoS2
###Doping effect on thermoelectric properties of MoS$_2$|Huaihong Guo,Teng Yang,Peng Tao,Zhidong Zhang###
(47448, 47450)
 MoS2 has a vanishingly smallanisotropy of thermopower but a big anisotropy of electrical conductivity andelectronic thermal conductivity in optimal doping region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.3, 'at', 2],[103.0, 700, 'K', 2]

In
###Doping effect on thermoelectric properties of MoS$_2$|Huaihong Guo,Teng Yang,Peng Tao,Zhidong Zhang###
(47557, 47557)
In-plane direction is demonstrated to be more preferable for thermoelectricapplications of MoS2 by doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.3, 'at', 1],[4.0, 700, 'K', 1]

MoS2
###Doping effect on thermoelectric properties of MoS$_2$|Huaihong Guo,Teng Yang,Peng Tao,Zhidong Zhang###
(47584, 47586)
In-plane direction is demonstrated to be more preferable for thermoelectricapplications of MoS2 by doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.3, 'at', 1],[31.0, 700, 'K', 1]

As
###Thermoelectric effects of quantum dot arrays embedded in nanowires|Yen-Chun Tseng,David M. -T. Kuo,Yia-Chung Chang,Chia-Wei Tsai###
(47637, 47637)
 The thermoelectric properties of quantum dot arrays (QDAs) embedded innanowires connected to electrodes are studied theoretically in the Coulombblockade regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermoelectric effects of quantum dot arrays embedded in nanowires|Yen-Chun Tseng,David M. -T. Kuo,Yia-Chung Chang,Chia-Wei Tsai###
(47800, 47800)
 In the Coulomb blockade regimethe electron thermal conductance is much smaller than the phonon thermalconductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InGaAs/GaAs
###Thermoelectric effects of quantum dot arrays embedded in nanowires|Yen-Chun Tseng,David M. -T. Kuo,Yia-Chung Chang,Chia-Wei Tsai###
(47907, 47912)
 We found that it is possible to obtain ZT value of InGaAs/GaAsQDAs embedded in nanowires larger than one at room temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

As
###Thermoelectric effects of quantum dot arrays embedded in nanowires|Yen-Chun Tseng,David M. -T. Kuo,Yia-Chung Chang,Chia-Wei Tsai###
(47917, 47917)
 We found that it is possible to obtain ZT value of InGaAs/GaAsQDAs embedded in nanowires larger than one at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###High thermoelectric performance of distorted Bismuth (110) layer|L. Cheng,H. J. Liu,J. Zhang,J. Wei,J. H. Liang,P. H. Jiang,D. D. Fan,L. Sun,J. Shi###
(48049, 48049)
 To accurately predict theelectronic and transport properties, the quasiparticle corrections with the G<missing VAR>Wapproximation of many-body effects have been explicitly included.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 6.4, 'can', 1]

Bi
###High thermoelectric performance of distorted Bismuth (110) layer|L. Cheng,H. J. Liu,J. Zhang,J. Wei,J. H. Liang,P. H. Jiang,D. D. Fan,L. Sun,J. Shi###
(48141, 48141)
 Moreover, wedemonstrate that the distorted Bi layer remains high ZT values at relativelybroad regions of both temperature and carrier concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 6.4, 'can', 1]

C
###Thermoelectric radiation detector based on a superconductor-ferromagnet junction: calorimetric regime|Subrata Chakraborty,Tero T. Heikkilä###
(48489, 48489)
 Besides constructing a very general noise model which takes into accountcross correlations between charge and heat noise, we show how the detectorsignal can be efficiently multiplexed by the use of resonant L<missing VAR>C circuits givinga fingerprint to each pixel.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 100, 'to', 1],[39.0, 200, 'mK', 1],[97.0, 1, 'THz', 2]

V
###Thermoelectric radiation detector based on a superconductor-ferromagnet junction: calorimetric regime|Subrata Chakraborty,Tero T. Heikkilä###
(48551, 48551)
 We show that for realistic detectors operating attemperatures around 100 to 200 mK, the energy resolution can be as low as 1meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 100, 'to', 0],[23.0, 200, 'mK', 0],[35.0, 1, 'THz', 1]

RuIn3
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48607, 48609)
Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 2.0, 'W', 2]

IrIn3
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48615, 48617)
Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 2.0, 'W', 2]

K
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48628, 48628)
 Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3and metallic IrIn3 are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2.0, 'W', 1]

RuIn3
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48639, 48641)
 Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3and metallic IrIn3 are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2.0, 'W', 1]

IrIn3
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48648, 48650)
 Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3and metallic IrIn3 are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2.0, 'W', 1]

RuIn3
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48657, 48659)
 RuIn3 is a narrow band gap semiconductor witha large n<missing VAR>-type Seebeck coefficient at room temperature (S(290K)400 muV/K),but the thermoelectric Figure of merit (ZT(290K)  0.007) is small because ofhigh electrical resistivity and thermal conductivity (kappa(290 K)  2.0 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2.0, 'W', 0]

K
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48698, 48698)
 RuIn3 is a narrow band gap semiconductor witha large n<missing VAR>-type Seebeck coefficient at room temperature (S(290K)400 muV/K),but the thermoelectric Figure of merit (ZT(290K)  0.007) is small because ofhigh electrical resistivity and thermal conductivity (kappa(290 K)  2.0 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2.0, 'W', 0]

K
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48705, 48705)
 RuIn3 is a narrow band gap semiconductor witha large n<missing VAR>-type Seebeck coefficient at room temperature (S(290K)400 muV/K),but the thermoelectric Figure of merit (ZT(290K)  0.007) is small because ofhigh electrical resistivity and thermal conductivity (kappa(290 K)  2.0 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2.0, 'W', 0]

K
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48727, 48727)
 RuIn3 is a narrow band gap semiconductor witha large n<missing VAR>-type Seebeck coefficient at room temperature (S(290K)400 muV/K),but the thermoelectric Figure of merit (ZT(290K)  0.007) is small because ofhigh electrical resistivity and thermal conductivity (kappa(290 K)  2.0 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2.0, 'W', 0]

K
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48760, 48760)
 RuIn3 is a narrow band gap semiconductor witha large n<missing VAR>-type Seebeck coefficient at room temperature (S(290K)400 muV/K),but the thermoelectric Figure of merit (ZT(290K)  0.007) is small because ofhigh electrical resistivity and thermal conductivity (kappa(290 K)  2.0 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2.0, 'W', 0]

K
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48768, 48768)
 RuIn3 is a narrow band gap semiconductor witha large n<missing VAR>-type Seebeck coefficient at room temperature (S(290K)400 muV/K),but the thermoelectric Figure of merit (ZT(290K)  0.007) is small because ofhigh electrical resistivity and thermal conductivity (kappa(290 K)  2.0 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2.0, 'W', 0]

IrIn3
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48772, 48774)
 IrIn3 is a metal with low thermopower at room temperature (S(290K)20muV/K) .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2.0, 'W', 1]

K
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48798, 48798)
 IrIn3 is a metal with low thermopower at room temperature (S(290K)20muV/K) .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 2.0, 'W', 1]

K
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48806, 48806)
 IrIn3 is a metal with low thermopower at room temperature (S(290K)20muV/K) .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2.0, 'W', 1]

K
###Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3|N. Haldolaarachchige,W. A. Phelan,Y. M. Xiong,R. Jin,J. Y. Chan,S. Stadler,D. P. Young###
(48876, 48876)
 Iridium substitution on the ruthenium site has a dramatic effect ontransport properties, which leads to a large improvement in the power factorand corresponding Figure of merit (ZT(380 K)  0.053), improving the efficiencyof the material by an over of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2.0, 'W', 2]

P
###Large thermoelectric power factors in black phosphorus and phosphorene|H. Y. Lv,W. J. Lu,D. F. Shao,Y. P. Sun###
(48954, 48954)
 The electronic properties of the layered black phosphorus (black-P) and itsmonolayer counterpart phosphorene are investigated by using thefirst-principles calculations based on the density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 118.4, 'and', 3],[165.0, -2, ',', 3],[193.0, 0.22, 'can', 4],[254.0, 0.3, 'conservatively', 5]

At
###Large thermoelectric power factors in black phosphorus and phosphorene|H. Y. Lv,W. J. Lu,D. F. Shao,Y. P. Sun###
(49063, 49063)
 At theoptimal doping level and room temperature, bulk black-P and phosphorene arefound to have large thermoelectric power factors of 118.4 and 138.9muWcm-1K-2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 118.4, 'and', 0],[56.0, -2, ',', 0],[84.0, 0.22, 'can', 1],[145.0, 0.3, 'conservatively', 2]

P
###Large thermoelectric power factors in black phosphorus and phosphorene|H. Y. Lv,W. J. Lu,D. F. Shao,Y. P. Sun###
(49085, 49085)
 At theoptimal doping level and room temperature, bulk black-P and phosphorene arefound to have large thermoelectric power factors of 118.4 and 138.9muWcm-1K-2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 118.4, 'and', 0],[34.0, -2, ',', 0],[62.0, 0.22, 'can', 1],[123.0, 0.3, 'conservatively', 2]

K
###Large thermoelectric power factors in black phosphorus and phosphorene|H. Y. Lv,W. J. Lu,D. F. Shao,Y. P. Sun###
(49118, 49118)
 At theoptimal doping level and room temperature, bulk black-P and phosphorene arefound to have large thermoelectric power factors of 118.4 and 138.9muWcm-1K-2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 118.4, 'and', 0],[1.0, -2, ',', 0],[29.0, 0.22, 'can', 1],[90.0, 0.3, 'conservatively', 2]

P
###Large thermoelectric power factors in black phosphorus and phosphorene|H. Y. Lv,W. J. Lu,D. F. Shao,Y. P. Sun###
(49159, 49159)
 The maximum dimensionless figure of merit (ZTvalue) of 0.22 can be achieved in bulk black-P by appropriate n<missing VAR>-type doping,primarily limited by the reducible lattice thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 118.4, 'and', 1],[40.0, -2, ',', 1],[12.0, 0.22, 'can', 0],[49.0, 0.3, 'conservatively', 1]

P
###Large thermoelectric power factors in black phosphorus and phosphorene|H. Y. Lv,W. J. Lu,D. F. Shao,Y. P. Sun###
(49242, 49242)
 Our results suggest that both bulk black-Pand phosphorene are potentially promising thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 118.4, 'and', 3],[123.0, -2, ',', 3],[95.0, 0.22, 'can', 2],[34.0, 0.3, 'conservatively', 1]

BN
###Enhancement of thermoelectric performance in Graphene/BN heterostructures|Van-Truong Tran,Jérôme Saint Martin,Philippe Dollfus###
(49280, 49281)
Enhancement of thermoelectric performance in Graphene/BN heterostructures.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 0.8, 'can', 4],[267.0, 1.48, 'may', 5]

(BN)
###Enhancement of thermoelectric performance in Graphene/BN heterostructures|Van-Truong Tran,Jérôme Saint Martin,Philippe Dollfus###
(49315, 49318)
 The thermoelectric properties of in plane heterostructures made of Grapheneand hexagonal Boron Nitride (BN) have been investigated by means of atomisticsimulation.
Featurization successful!
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 0.8, 'can', 3],[230.0, 1.48, 'may', 4]

BN
###Enhancement of thermoelectric performance in Graphene/BN heterostructures|Van-Truong Tran,Jérôme Saint Martin,Philippe Dollfus###
(49363, 49364)
 The heterostructures consist in armchair graphene nanoribbons tothe sides of which BN flakes are periodically attached.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.8, 'can', 2],[184.0, 1.48, 'may', 3]

In
###Enhancement of thermoelectric performance in Graphene/BN heterostructures|Van-Truong Tran,Jérôme Saint Martin,Philippe Dollfus###
(49443, 49443)
 In combination with the large Seebeckcoefficient resulting from the BN-induced bandgap opening or broadening, it isshown that large thermoelectric figure of merit ZT > 0.8 can be reached inperfect structures at relatively low Fermi energy, depending on the graphenenanoribbon width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.8, 'can', 0],[105.0, 1.48, 'may', 1]

BN
###Enhancement of thermoelectric performance in Graphene/BN heterostructures|Van-Truong Tran,Jérôme Saint Martin,Philippe Dollfus###
(49464, 49465)
 In combination with the large Seebeckcoefficient resulting from the BN-induced bandgap opening or broadening, it isshown that large thermoelectric figure of merit ZT > 0.8 can be reached inperfect structures at relatively low Fermi energy, depending on the graphenenanoribbon width.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.8, 'can', 0],[83.0, 1.48, 'may', 1]

ZrS2
###Strain-induced enhancement of thermoelectric performance in a ZrS2 monolayer|H. Y. Lv,W. J. Lu,D. F. Shao,H. Y. Lu,Y. P. Sun###
(49618, 49620)
Strain-induced enhancement of thermoelectric performance in a ZrS2 monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 6, '%', 5],[254.0, 2.4, 'is', 5],[276.0, 300, 'K', 5],[282.0, 4.3, 'times', 5]

ZrS2
###Strain-induced enhancement of thermoelectric performance in a ZrS2 monolayer|H. Y. Lv,W. J. Lu,D. F. Shao,H. Y. Lu,Y. P. Sun###
(49692, 49694)
 Here we report thegreatly enhanced thermoelectric performance of a ZrS2 monolayer by the biaxialtensile strain, due to the simultaneous increase of the Seebeck coefficient anddecrease of the thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 6, '%', 3],[180.0, 2.4, 'is', 3],[202.0, 300, 'K', 3],[208.0, 4.3, 'times', 3]

ZrS2
###Strain-induced enhancement of thermoelectric performance in a ZrS2 monolayer|H. Y. Lv,W. J. Lu,D. F. Shao,H. Y. Lu,Y. P. Sun###
(49783, 49785)
 Based on the first-principlescalculations combined with the Boltzmann transport theory, we predict the bandgap of the ZrS2 monolayer can be effectively engineered by the strain and theSeebeck coefficient is significantly increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 6, '%', 2],[89.0, 2.4, 'is', 2],[111.0, 300, 'K', 2],[117.0, 4.3, 'times', 2]

At
###Strain-induced enhancement of thermoelectric performance in a ZrS2 monolayer|H. Y. Lv,W. J. Lu,D. F. Shao,H. Y. Lu,Y. P. Sun###
(49851, 49851)
 At thestrain of 6%, the maximal ZT value of 2.4 is obtained for the p<missing VAR>-type doped ZrS2monolayer at 300 K, which is 4.3 times larger than that of the unstrainedsystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 6, '%', 0],[23.0, 2.4, 'is', 0],[45.0, 300, 'K', 0],[51.0, 4.3, 'times', 0]

ZrS2
###Strain-induced enhancement of thermoelectric performance in a ZrS2 monolayer|H. Y. Lv,W. J. Lu,D. F. Shao,H. Y. Lu,Y. P. Sun###
(49888, 49890)
 At thestrain of 6%, the maximal ZT value of 2.4 is obtained for the p<missing VAR>-type doped ZrS2monolayer at 300 K, which is 4.3 times larger than that of the unstrainedsystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 6, '%', 0],[14.0, 2.4, 'is', 0],[6.0, 300, 'K', 0],[12.0, 4.3, 'times', 0]

B
###Optimal thermoelectric figure of merit of a molecular junction|Padraig Murphy,Subroto Mukerjee,Joel Moore###
(50144, 50144)
The molecular state through which charge is transported must be weakly coupledto the leads, and the energy level of the state must be of order k<missing VAR>B T<missing VAR> awayfrom the Fermi energy of the leads.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, ',', 1]

In
###Optimal thermoelectric figure of merit of a molecular junction|Padraig Murphy,Subroto Mukerjee,Joel Moore###
(50166, 50166)
 In practice, the figure of merit is limitedby the phonon thermal conductance; we show that the largest possibleZTsim(tildeG<missing VAR>thph)-1/2, where tildeG<missing VAR>thph is the phononthermal conductance divided by the thermal conductance quantum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, ',', 0]

Fe2VAl
###Unexpected band gap increase in the Fe2VAl Heusler compound|A. Berche,M. Talla Noutack,M. -L. Doublet,P. Jund###
(50274, 50277)
Unexpected band gap increase in the Fe2VAl Heusler compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2VAl
###Unexpected band gap increase in the Fe2VAl Heusler compound|A. Berche,M. Talla Noutack,M. -L. Doublet,P. Jund###
(50370, 50373)
 Even if the Fe2VAl Heusler compound hasa decent ZT, its conductive nature (semi-metal or semiconductor) is not yetclarified especially at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unexpected band gap increase in the Fe2VAl Heusler compound|A. Berche,M. Talla Noutack,M. -L. Doublet,P. Jund###
(50424, 50424)
 In this paper, we focus our DFTcalculations on the effect of temperature on the bandgap of Fe2VAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2VAl
###Unexpected band gap increase in the Fe2VAl Heusler compound|A. Berche,M. Talla Noutack,M. -L. Doublet,P. Jund###
(50462, 50465)
 In this paper, we focus our DFTcalculations on the effect of temperature on the bandgap of Fe2VAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unexpected band gap increase in the Fe2VAl Heusler compound|A. Berche,M. Talla Noutack,M. -L. Doublet,P. Jund###
(50468, 50468)
 In contrastto what is usually observed, we show that both the temperature increase and theformation of thermally-activated Al/V inversion defects (observedexperimentally), open the bandgap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al/V
###Unexpected band gap increase in the Fe2VAl Heusler compound|A. Berche,M. Talla Noutack,M. -L. Doublet,P. Jund###
(50511, 50513)
 In contrastto what is usually observed, we show that both the temperature increase and theformation of thermally-activated Al/V inversion defects (observedexperimentally), open the bandgap.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe2VAl
###Unexpected band gap increase in the Fe2VAl Heusler compound|A. Berche,M. Talla Noutack,M. -L. Doublet,P. Jund###
(50565, 50568)
 Such an unusual behavior is the key forreconciling all bandgap measurements performed on the Fe2VAl compound using astandard GGA functional and could be an efficient way for improving thethermoelectric properties of this family of materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Electronic and Thermoelectric Properties of Few-Layer Transition Metal Dichalcogenides|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(50671, 50673)
 The electronic and thermoelectric properties of one to four monolayers ofMoS2, MoSe2, WS2, and WSe2 are calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoSe2
###Electronic and Thermoelectric Properties of Few-Layer Transition Metal Dichalcogenides|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(50676, 50678)
 The electronic and thermoelectric properties of one to four monolayers ofMoS2, MoSe2, WS2, and WSe2 are calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS2
###Electronic and Thermoelectric Properties of Few-Layer Transition Metal Dichalcogenides|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(50681, 50683)
 The electronic and thermoelectric properties of one to four monolayers ofMoS2, MoSe2, WS2, and WSe2 are calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSe2
###Electronic and Thermoelectric Properties of Few-Layer Transition Metal Dichalcogenides|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(50688, 50690)
 The electronic and thermoelectric properties of one to four monolayers ofMoS2, MoSe2, WS2, and WSe2 are calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Electronic and Thermoelectric Properties of Few-Layer Transition Metal Dichalcogenides|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(50720, 50720)
 For few layerthicknesses,the near degeneracies of the conduction band K and Sigmavalleys and the valence band Gamma and K valleys enhance the n<missing VAR>-type andp<missing VAR>-type thermoelectric performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Electronic and Thermoelectric Properties of Few-Layer Transition Metal Dichalcogenides|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(50741, 50741)
 For few layerthicknesses,the near degeneracies of the conduction band K and Sigmavalleys and the valence band Gamma and K valleys enhance the n<missing VAR>-type andp<missing VAR>-type thermoelectric performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electronic and Thermoelectric Properties of Few-Layer Transition Metal Dichalcogenides|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(50816, 50816)
 In all cases, the maximum ZT coincideswith the greatest near-degeneracy within kBT of the band edge that resultsin the sharpest turn-on of the density of modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Bi)
###Does Topology Enhance Thermoelectric Efficiency? A Case Study in Bismuthene|Muhammad Gaffar,Sasfan Arman Wella,Eddwi Hesky Hasdeo###
(51014, 51016)
 Two-dimensional (2D) bismuth (Bi) layer, known as bismuthene, exhibits Z<missing VAR>2topological bulk states due to large spin-orbit coupling that inverts thebands.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Does Topology Enhance Thermoelectric Efficiency? A Case Study in Bismuthene|Muhammad Gaffar,Sasfan Arman Wella,Eddwi Hesky Hasdeo###
(51153, 51153)
 Wedetermine the thermoelectric properties for some considered phases,incorporating the edge states contribution, by using the linearized Boltzmanntransport equation (BTE) with a constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51294, 51294)
Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 0.1, ';', 3],[368.0, 0.038, 'for', 7],[383.0, 540, 'K', 7]

Mn
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51298, 51298)
Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 0.1, ';', 3],[364.0, 0.038, 'for', 7],[379.0, 540, 'K', 7]

NdCoO3
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51304, 51307)
Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 0.1, ';', 3],[355.0, 0.038, 'for', 7],[370.0, 540, 'K', 7]

In
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51374, 51374)
 In this study, the role of Sr and Mnco-substitution on the thermoelectric properties of NdCoO3(Nd1-xSrx<missing VAR>Co1-yMny<missing VAR>O3; 0.00 leq x<missing VAR> leq 0.10; 0.00 leq y<missing VAR> leq 0.10) isinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0.1, ';', 0],[288.0, 0.038, 'for', 4],[303.0, 540, 'K', 4]

Sr
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51387, 51387)
 In this study, the role of Sr and Mnco-substitution on the thermoelectric properties of NdCoO3(Nd1-xSrx<missing VAR>Co1-yMny<missing VAR>O3; 0.00 leq x<missing VAR> leq 0.10; 0.00 leq y<missing VAR> leq 0.10) isinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0.1, ';', 0],[275.0, 0.038, 'for', 4],[290.0, 540, 'K', 4]

Mn
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51391, 51391)
 In this study, the role of Sr and Mnco-substitution on the thermoelectric properties of NdCoO3(Nd1-xSrx<missing VAR>Co1-yMny<missing VAR>O3; 0.00 leq x<missing VAR> leq 0.10; 0.00 leq y<missing VAR> leq 0.10) isinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 0.1, ';', 0],[271.0, 0.038, 'for', 4],[286.0, 540, 'K', 4]

NdCoO3
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51408, 51411)
 In this study, the role of Sr and Mnco-substitution on the thermoelectric properties of NdCoO3(Nd1-xSrx<missing VAR>Co1-yMny<missing VAR>O3; 0.00 leq x<missing VAR> leq 0.10; 0.00 leq y<missing VAR> leq 0.10) isinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0.1, ';', 0],[251.0, 0.038, 'for', 4],[266.0, 540, 'K', 4]

Nd1-xSr
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51415, 51419)
 In this study, the role of Sr and Mnco-substitution on the thermoelectric properties of NdCoO3(Nd1-xSrx<missing VAR>Co1-yMny<missing VAR>O3; 0.00 leq x<missing VAR> leq 0.10; 0.00 leq y<missing VAR> leq 0.10) isinvestigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[20.0, 0.1, ';', 0],[243.0, 0.038, 'for', 4],[258.0, 540, 'K', 4]

Co1-yMn
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51421, 51425)
 In this study, the role of Sr and Mnco-substitution on the thermoelectric properties of NdCoO3(Nd1-xSrx<missing VAR>Co1-yMny<missing VAR>O3; 0.00 leq x<missing VAR> leq 0.10; 0.00 leq y<missing VAR> leq 0.10) isinvestigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[14.0, 0.1, ';', 0],[237.0, 0.038, 'for', 4],[252.0, 540, 'K', 4]

O3
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51427, 51428)
 In this study, the role of Sr and Mnco-substitution on the thermoelectric properties of NdCoO3(Nd1-xSrx<missing VAR>Co1-yMny<missing VAR>O3; 0.00 leq x<missing VAR> leq 0.10; 0.00 leq y<missing VAR> leq 0.10) isinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.1, ';', 0],[234.0, 0.038, 'for', 4],[249.0, 540, 'K', 4]

Sr
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51471, 51471)
 The Seebeck coefficient decreases with single Sr substitution atNd site; however, the Sr and Mn co-substitution enhances the Seebeckcoefficient compared to single Sr substitution and is attributed to thelocalization effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0.1, ';', 1],[191.0, 0.038, 'for', 3],[206.0, 540, 'K', 3]

Nd
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51478, 51478)
 The Seebeck coefficient decreases with single Sr substitution atNd site; however, the Sr and Mn co-substitution enhances the Seebeckcoefficient compared to single Sr substitution and is attributed to thelocalization effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 0.1, ';', 1],[184.0, 0.038, 'for', 3],[199.0, 540, 'K', 3]

Sr
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51488, 51488)
 The Seebeck coefficient decreases with single Sr substitution atNd site; however, the Sr and Mn co-substitution enhances the Seebeckcoefficient compared to single Sr substitution and is attributed to thelocalization effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.1, ';', 1],[174.0, 0.038, 'for', 3],[189.0, 540, 'K', 3]

Mn
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51492, 51492)
 The Seebeck coefficient decreases with single Sr substitution atNd site; however, the Sr and Mn co-substitution enhances the Seebeckcoefficient compared to single Sr substitution and is attributed to thelocalization effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0.1, ';', 1],[170.0, 0.038, 'for', 3],[185.0, 540, 'K', 3]

Sr
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51513, 51513)
 The Seebeck coefficient decreases with single Sr substitution atNd site; however, the Sr and Mn co-substitution enhances the Seebeckcoefficient compared to single Sr substitution and is attributed to thelocalization effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.1, ';', 1],[149.0, 0.038, 'for', 3],[164.0, 540, 'K', 3]

Sr
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51533, 51533)
 Sr substitution at La site creates hole in the system andresults in enhanced electrical conductivity (sigma); however, sigmareduces with Mn substitution at Co site in NdCoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 0.1, ';', 2],[129.0, 0.038, 'for', 2],[144.0, 540, 'K', 2]

La
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51539, 51539)
 Sr substitution at La site creates hole in the system andresults in enhanced electrical conductivity (sigma); however, sigmareduces with Mn substitution at Co site in NdCoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.1, ';', 2],[123.0, 0.038, 'for', 2],[138.0, 540, 'K', 2]

Mn
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51581, 51581)
 Sr substitution at La site creates hole in the system andresults in enhanced electrical conductivity (sigma); however, sigmareduces with Mn substitution at Co site in NdCoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.1, ';', 2],[81.0, 0.038, 'for', 2],[96.0, 540, 'K', 2]

Co
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51587, 51587)
 Sr substitution at La site creates hole in the system andresults in enhanced electrical conductivity (sigma); however, sigmareduces with Mn substitution at Co site in NdCoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.1, ';', 2],[75.0, 0.038, 'for', 2],[90.0, 540, 'K', 2]

NdCoO3
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51593, 51596)
 Sr substitution at La site creates hole in the system andresults in enhanced electrical conductivity (sigma); however, sigmareduces with Mn substitution at Co site in NdCoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.1, ';', 2],[66.0, 0.038, 'for', 2],[81.0, 540, 'K', 2]

Nd0.95Sr0.05Co0.95Mn0.05O3
###Electrical and Thermal transport studies of Sr and Mn co-substituted NdCoO3|Ashutosh Kumar###
(51665, 51674)
 Simultaneous optimization of TEparameters results in improved zT sim 0.038 forNd0.95Sr0.05Co0.95Mn0.05O3 at 540 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.01,0,0.19,0,0,0,0,0,0,0,0,0,0,0.01,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 0.1, ';', 4],[3.0, 0.038, 'for', 0],[3.0, 540, 'K', 0]

HfPb
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(51717, 51718)
Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys X<missing VAR>HfPb (X<missing VAR> Ni, Pd, and Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(51723, 51723)
Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys X<missing VAR>HfPb (X<missing VAR> Ni, Pd, and Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(51726, 51726)
Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys X<missing VAR>HfPb (X<missing VAR> Ni, Pd, and Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(51731, 51731)
Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys X<missing VAR>HfPb (X<missing VAR> Ni, Pd, and Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(51735, 51735)
 In this work we calculate the thermoelectric figure of merit of X<missing VAR>HfPb (X<missing VAR> Ni,Pd, and Pt) by computing the both the power factor and the lattice thermalconductivity by first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfPb
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(51758, 51759)
 In this work we calculate the thermoelectric figure of merit of X<missing VAR>HfPb (X<missing VAR> Ni,Pd, and Pt) by computing the both the power factor and the lattice thermalconductivity by first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(51764, 51764)
 In this work we calculate the thermoelectric figure of merit of X<missing VAR>HfPb (X<missing VAR> Ni,Pd, and Pt) by computing the both the power factor and the lattice thermalconductivity by first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(51768, 51768)
 In this work we calculate the thermoelectric figure of merit of X<missing VAR>HfPb (X<missing VAR> Ni,Pd, and Pt) by computing the both the power factor and the lattice thermalconductivity by first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(51773, 51773)
 In this work we calculate the thermoelectric figure of merit of X<missing VAR>HfPb (X<missing VAR> Ni,Pd, and Pt) by computing the both the power factor and the lattice thermalconductivity by first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(51832, 51832)
 We make reasonable approximations we use theConstant Relaxation Time Approximation (CRTA) to compute the electron transportcontribution and the modified Debye-Callaway model to calculate the thermallattice conductivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrHfPb
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(51974, 51976)
 Next, we consider a realistic relaxation time tau and carrierconcentration n<missing VAR> from experimental data on ZrHfPb and obtain the figure ofmerit ZT as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(52020, 52020)
 Our main finding is that despite thePt is isoelectronic with Ni and Pd, the ZT of PtHfPb is larger and behavesdifferently from the other two materials, suggesting that PtHfPb is bettersuited for high temperature thermoelectric generators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(52028, 52028)
 Our main finding is that despite thePt is isoelectronic with Ni and Pd, the ZT of PtHfPb is larger and behavesdifferently from the other two materials, suggesting that PtHfPb is bettersuited for high temperature thermoelectric generators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(52032, 52032)
 Our main finding is that despite thePt is isoelectronic with Ni and Pd, the ZT of PtHfPb is larger and behavesdifferently from the other two materials, suggesting that PtHfPb is bettersuited for high temperature thermoelectric generators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtHfPb
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(52042, 52044)
 Our main finding is that despite thePt is isoelectronic with Ni and Pd, the ZT of PtHfPb is larger and behavesdifferently from the other two materials, suggesting that PtHfPb is bettersuited for high temperature thermoelectric generators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtHfPb
###Electronic and phonon contributions to the Thermoelectric properties of newly discovered half-Heusler alloys XHfPb (X= Ni, Pd, and Pt)|Paul O. Adebambo,Gboyega A. Adebayo,Roberto Guerra,Davide Ceresoli###
(52072, 52074)
 Our main finding is that despite thePt is isoelectronic with Ni and Pd, the ZT of PtHfPb is larger and behavesdifferently from the other two materials, suggesting that PtHfPb is bettersuited for high temperature thermoelectric generators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiTeBr
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52118, 52120)
Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[554.0, 0.55, 'in', 11],[563.0, 0.75, 'in', 11]

In
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52153, 52153)
 In the work, by combining the first-principlescalculations and semiclassical Boltzmann transport theory, we investigate thethermoelectric properties of bulk and monolayer BiTeBr including both theelectron and phonon transports.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[521.0, 0.55, 'in', 9],[530.0, 0.75, 'in', 9]

BiTeBr
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52203, 52205)
 In the work, by combining the first-principlescalculations and semiclassical Boltzmann transport theory, we investigate thethermoelectric properties of bulk and monolayer BiTeBr including both theelectron and phonon transports.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[469.0, 0.55, 'in', 9],[478.0, 0.75, 'in', 9]

(SOC)
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52246, 52250)
 The generalized gradient approximation (GGA)plus spin-orbit coupling (SOC) is employed for the electron part, and GGA forthe phonon part.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[424.0, 0.55, 'in', 8],[433.0, 0.75, 'in', 8]

SOC
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52289, 52291)
 It is found that SOC has important effects on electronictransport coefficients because of SOC-induced obvious influences on energy bandstructures.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 0.55, 'in', 7],[392.0, 0.75, 'in', 7]

SOC
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52312, 52314)
 It is found that SOC has important effects on electronictransport coefficients because of SOC-induced obvious influences on energy bandstructures.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 0.55, 'in', 7],[369.0, 0.75, 'in', 7]

In
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52332, 52332)
 In p<missing VAR>-type doping, monolayer has larger Seebeck coefficient thanbulk in wide doping range, which is beneficial to excellent thermoelectricperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 0.55, 'in', 6],[351.0, 0.75, 'in', 6]

W
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52403, 52403)
 The calculated average lattice thermal conductivity of bulk is1.71 mathrmW m<missing VAR>-1 K-1 at room temperature, which is close toexperimental value 1.3 mathrmW m<missing VAR>-1 K-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 0.55, 'in', 5],[280.0, 0.75, 'in', 5]

K
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52409, 52409)
 The calculated average lattice thermal conductivity of bulk is1.71 mathrmW m<missing VAR>-1 K-1 at room temperature, which is close toexperimental value 1.3 mathrmW m<missing VAR>-1 K-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 0.55, 'in', 5],[274.0, 0.75, 'in', 5]

W
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52436, 52436)
 The calculated average lattice thermal conductivity of bulk is1.71 mathrmW m<missing VAR>-1 K-1 at room temperature, which is close toexperimental value 1.3 mathrmW m<missing VAR>-1 K-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 0.55, 'in', 5],[247.0, 0.75, 'in', 5]

K
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52442, 52442)
 The calculated average lattice thermal conductivity of bulk is1.71 mathrmW m<missing VAR>-1 K-1 at room temperature, which is close toexperimental value 1.3 mathrmW m<missing VAR>-1 K-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 0.55, 'in', 5],[241.0, 0.75, 'in', 5]

BiTeBr
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52709, 52711)
 These results imply that monolayer BiTeBr may be a potentialtwo-dimensional (2D) thermoelectric material, which can stimulate furtherexperimental works to synthesize monolayer BiTeBr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.55, 'in', 1],[26.0, 0.75, 'in', 1]

BiTeBr
###Monolayer enhanced thermoelectric properties compared with bulk for BiTeBr|San-Dong Guo,Hui-Chao Li###
(52755, 52757)
 These results imply that monolayer BiTeBr may be a potentialtwo-dimensional (2D) thermoelectric material, which can stimulate furtherexperimental works to synthesize monolayer BiTeBr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.55, 'in', 1],[72.0, 0.75, 'in', 1]

Se
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(52971, 52971)
Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 4.5, 'uW', 4],[141.0, 470, 'deg', 4],[176.0, 0.17, 'at', 6],[180.0, 470, 'deg', 6]

LaOBiS2-x
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(52983, 52989)
Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[114.0, 4.5, 'uW', 4],[123.0, 470, 'deg', 4],[158.0, 0.17, 'at', 6],[162.0, 470, 'deg', 6]

LaOBiS2-x
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(53018, 53024)
 We have investigated the thermoelectric properties of the novel layeredbismuth chalcogenides LaOBiS2-xSex.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[79.0, 4.5, 'uW', 3],[88.0, 470, 'deg', 3],[123.0, 0.17, 'at', 5],[127.0, 470, 'deg', 5]

S
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(53036, 53036)
 The partial substitution of S by Seproduced the enhancement of electrical conductivity (metallic characteristics)in LaOBiS2-xSex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 4.5, 'uW', 2],[76.0, 470, 'deg', 2],[111.0, 0.17, 'at', 4],[115.0, 470, 'deg', 4]

Se
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(53040, 53040)
 The partial substitution of S by Seproduced the enhancement of electrical conductivity (metallic characteristics)in LaOBiS2-xSex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 4.5, 'uW', 2],[72.0, 470, 'deg', 2],[107.0, 0.17, 'at', 4],[111.0, 470, 'deg', 4]

LaOBiS2-x
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(53064, 53070)
 The partial substitution of S by Seproduced the enhancement of electrical conductivity (metallic characteristics)in LaOBiS2-xSex.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[33.0, 4.5, 'uW', 2],[42.0, 470, 'deg', 2],[77.0, 0.17, 'at', 4],[81.0, 470, 'deg', 4]

Se
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(53088, 53088)
 The power factor largely increased with increasing Seconcentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 4.5, 'uW', 1],[24.0, 470, 'deg', 1],[59.0, 0.17, 'at', 3],[63.0, 470, 'deg', 3]

K2
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(53106, 53107)
 The highest power factor was 4.5 uW/cmK2 at around 470 deg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 4.5, 'uW', 0],[5.0, 470, 'deg', 0],[40.0, 0.17, 'at', 2],[44.0, 470, 'deg', 2]

C
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(53115, 53115)
 Cfor LaOBiS1.2Se0.8.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 4.5, 'uW', 1],[3.0, 470, 'deg', 1],[32.0, 0.17, 'at', 1],[36.0, 470, 'deg', 1]

LaOBiS1.2Se0.8
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(53120, 53126)
 Cfor LaOBiS1.2Se0.8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.24,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 4.5, 'uW', 1],[8.0, 470, 'deg', 1],[21.0, 0.17, 'at', 1],[25.0, 470, 'deg', 1]

C
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(53154, 53154)
 C in LaOBiS1.2Se0.8.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 4.5, 'uW', 3],[42.0, 470, 'deg', 3],[7.0, 0.17, 'at', 1],[3.0, 470, 'deg', 1]

LaOBiS1.2Se0.8
###Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex|Yoshikazu Mizuguchi,Atsushi Omachi,Yosuke Goto,Yoichi Kamihara,Masanori Matoba,Takafumi Hiroi,Joe Kajitani,Osuke Miura###
(53158, 53164)
 C in LaOBiS1.2Se0.8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.24,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 4.5, 'uW', 3],[46.0, 470, 'deg', 3],[11.0, 0.17, 'at', 1],[7.0, 470, 'deg', 1]

LaPtSb
###LaPtSb: a half-Heusler compound with high thermoelectric performance|Q. Y. Xue,H. J. Liu,D. D. Fan,L. Cheng,B. Y. Zhao,J. Shi###
(53175, 53177)
LaPtSb a half-Heusler compound with high thermoelectric performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2.2, 'by', 3]

LaPtSb
###LaPtSb: a half-Heusler compound with high thermoelectric performance|Q. Y. Xue,H. J. Liu,D. D. Fan,L. Cheng,B. Y. Zhao,J. Shi###
(53216, 53218)
 The electronic and transport properties of the half-Heusler compound LaPtSbare investigated by performing first-principles calculations combined withsemi-classical Boltzmann theory and deformation potential theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 2.2, 'by', 2]

LaPtSb
###LaPtSb: a half-Heusler compound with high thermoelectric performance|Q. Y. Xue,H. J. Liu,D. D. Fan,L. Cheng,B. Y. Zhao,J. Shi###
(53275, 53277)
 Compared withmany typical half-Heusler compounds, the LaPtSb exhibits obviously larger powerfactor at room temperature, especially for the n<missing VAR>-type system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2.2, 'by', 1]

LaPtSb
###LaPtSb: a half-Heusler compound with high thermoelectric performance|Q. Y. Xue,H. J. Liu,D. D. Fan,L. Cheng,B. Y. Zhao,J. Shi###
(53346, 53348)
 Together with thevery low lattice thermal conductivity, the thermoelectric figure of merit (ZT)of LaPtSb can be optimized to a record high value of 2.2 by fine tuning thecarrier concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2.2, 'by', 0]

P
###Thermal electric effects and heat generation in polypyrrole coated PET fabrics|J. Avloni,L. Florio,A. R. Henn,A. Sparavigna###
(53618, 53618)
Thermal electric effects and heat generation in polypyrrole coated PET fabrics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Thermal electric effects and heat generation in polypyrrole coated PET fabrics|J. Avloni,L. Florio,A. R. Henn,A. Sparavigna###
(53633, 53633)
 Polypyrrole chemically synthesized on PET gives rise to textiles with a highelectric conductivity, suitable for several applications from antistatics toelectromagnetic interference shielding devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Thermal electric effects and heat generation in polypyrrole coated PET fabrics|J. Avloni,L. Florio,A. R. Henn,A. Sparavigna###
(53707, 53707)
 Here, we discuss investigationson thermal electric performances of the polypyrrole coated PET in a wide rangeof temperatures above room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###High thermoelectric performance can be achieved in black phosphorus|J. Zhang,H. J. Liu,L. Cheng,J. Wei,J. H. Liang,D. D. Fan,P. H. Jiang,L. Sun,J. Shi###
(54712, 54712)
 Moreover, such value can be furtherincreased to 5.4 by substituting P atom with Sb atom, giving nominal formula ofP0.75Sb0.25.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1.1, 'can', 1],[4.0, 5.4, 'by', 0]

Sb
###High thermoelectric performance can be achieved in black phosphorus|J. Zhang,H. J. Liu,L. Cheng,J. Wei,J. H. Liang,D. D. Fan,P. H. Jiang,L. Sun,J. Shi###
(54718, 54718)
 Moreover, such value can be furtherincreased to 5.4 by substituting P atom with Sb atom, giving nominal formula ofP0.75Sb0.25.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 1.1, 'can', 1],[10.0, 5.4, 'by', 0]

P0.75Sb0.25
###High thermoelectric performance can be achieved in black phosphorus|J. Zhang,H. J. Liu,L. Cheng,J. Wei,J. H. Liang,D. D. Fan,P. H. Jiang,L. Sun,J. Shi###
(54732, 54735)
 Moreover, such value can be furtherincreased to 5.4 by substituting P atom with Sb atom, giving nominal formula ofP0.75Sb0.25.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1.1, 'can', 1],[24.0, 5.4, 'by', 0]

Ti5O9
###Thermoelectric characterization of fine-grained Ti5O9 Magneli phase ceramics|Sudeep Jung Pandey,Giriraj Joshi,Shidong Wang,Stefano Curtarolo,Romain Gaume###
(54803, 54806)
Thermoelectric characterization of fine-grained Ti5O9 Magneli phase ceramics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35714285714285715,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1223, 'K', 1],[84.0, 1076, 'K', 2],[180.0, 0.3, 'at', 4],[181.0, 1076, 'K', 4]

Ti5O9
###Thermoelectric characterization of fine-grained Ti5O9 Magneli phase ceramics|Sudeep Jung Pandey,Giriraj Joshi,Shidong Wang,Stefano Curtarolo,Romain Gaume###
(54819, 54822)
 Magneli phase Ti5O9 ceramics with 200-nm grain-size were fabricated byhot-pressing nanopowders of titanium and anatase TiO2 at 1223 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35714285714285715,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1223, 'K', 0],[68.0, 1076, 'K', 1],[164.0, 0.3, 'at', 3],[165.0, 1076, 'K', 3]

TiO2
###Thermoelectric characterization of fine-grained Ti5O9 Magneli phase ceramics|Sudeep Jung Pandey,Giriraj Joshi,Shidong Wang,Stefano Curtarolo,Romain Gaume###
(54857, 54859)
 Magneli phase Ti5O9 ceramics with 200-nm grain-size were fabricated byhot-pressing nanopowders of titanium and anatase TiO2 at 1223 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1223, 'K', 0],[31.0, 1076, 'K', 1],[127.0, 0.3, 'at', 3],[128.0, 1076, 'K', 3]

KSnSb
###First-principles study of the thermoelectric properties of Zintl compound KSnSb|S. Huang,H. J. Liu,D. D. Fan,P. H. Jiang,J. H. Liang,G. H. Cao,J. Shi###
(55018, 55020)
First-principles study of the thermoelectric properties of Zintl compound KSnSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 800, 'K', 2]

In
###First-principles study of the thermoelectric properties of Zintl compound KSnSb|S. Huang,H. J. Liu,D. D. Fan,P. H. Jiang,J. H. Liang,G. H. Cao,J. Shi###
(55076, 55076)
In this work, by combining first-principles calculations and Boltzmanntransport theory for both electrons and phonons, we demonstrate that the ZTvalue of Zintl compound KSnSb can reach 2.6 at 800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 800, 'K', 0]

KSnSb
###First-principles study of the thermoelectric properties of Zintl compound KSnSb|S. Huang,H. J. Liu,D. D. Fan,P. H. Jiang,J. H. Liang,G. H. Cao,J. Shi###
(55133, 55135)
In this work, by combining first-principles calculations and Boltzmanntransport theory for both electrons and phonons, we demonstrate that the ZTvalue of Zintl compound KSnSb can reach 2.6 at 800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 800, 'K', 0]

Bi2Te3
###How bilayer excitons can greatly enhance thermoelectric efficiency|Kai Wu,Louk Rademaker,Jan Zaanen###
(55397, 55400)
 A bilayer exciton heterostructures of p<missing VAR>- and n<missing VAR>-dopedBi2Te3 can have a figure of merit zT sim 60.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###How bilayer excitons can greatly enhance thermoelectric efficiency|Kai Wu,Louk Rademaker,Jan Zaanen###
(55447, 55450)
 Another materialsuggestion is to make a bilayer out of electron-doped SrTiO3 and hole-dopedCa3Co4O9.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Co4O9
###How bilayer excitons can greatly enhance thermoelectric efficiency|Kai Wu,Louk Rademaker,Jan Zaanen###
(55459, 55464)
 Another materialsuggestion is to make a bilayer out of electron-doped SrTiO3 and hole-dopedCa3Co4O9.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5625,0,0,0,0,0,0,0,0,0,0,0,0.1875,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###An Analytic Study of the Wiedemann-Franz Law and the Thermoelectric Figure of Merit|Aakash Yadav,PC Deshmukh,Ken Roberts,NM Jisrawi,SR Valluri###
(55538, 55538)
 In the currentwork, it is shown that the calculation of exact Fermi-Dirac integrals enablesthe generalization of the Wiedemann-Franz law (WF) to optimize thedimensionless thermoelectric figure of merit ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(WF)
###An Analytic Study of the Wiedemann-Franz Law and the Thermoelectric Figure of Merit|Aakash Yadav,PC Deshmukh,Ken Roberts,NM Jisrawi,SR Valluri###
(55587, 55590)
 In the currentwork, it is shown that the calculation of exact Fermi-Dirac integrals enablesthe generalization of the Wiedemann-Franz law (WF) to optimize thedimensionless thermoelectric figure of merit ZT.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###An Analytic Study of the Wiedemann-Franz Law and the Thermoelectric Figure of Merit|Aakash Yadav,PC Deshmukh,Ken Roberts,NM Jisrawi,SR Valluri###
(55647, 55647)
In the calculation of the thermal conductivity, both electronic and phononiccontributions are included.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiBaK
###High thermoelectric performance of half-Heusler compound BiBaK with intrinsically low lattice thermal conductivity|S. H. Han,Z. Z. Zhou,C. Y. Sheng,J. H. Liu,L. Wang,H. M. Yuan,H. J. Liu###
(55762, 55764)
High thermoelectric performance of half-Heusler compound BiBaK with intrinsically low lattice thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 1.9, 'at', 4],[226.0, 900, 'K', 4]

BiBaK
###High thermoelectric performance of half-Heusler compound BiBaK with intrinsically low lattice thermal conductivity|S. H. Han,Z. Z. Zhou,C. Y. Sheng,J. H. Liu,L. Wang,H. M. Yuan,H. J. Liu###
(55841, 55843)
 Here wedemonstrate by first-principles calculations and Boltzmann transport theorythat the BiBaK system is an exception, which has rather low thermalconductivity as evidenced by very small phonon group velocity and relaxationtime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 1.9, 'at', 2],[147.0, 900, 'K', 2]

Bi
###High thermoelectric performance of half-Heusler compound BiBaK with intrinsically low lattice thermal conductivity|S. H. Han,Z. Z. Zhou,C. Y. Sheng,J. H. Liu,L. Wang,H. M. Yuan,H. J. Liu###
(55903, 55903)
 Detailed analysis indicates that the heavy Bi and Ba atoms form acage-like structure, inside which the light K atom rattles with larger atomicdisplacement parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1.9, 'at', 1],[87.0, 900, 'K', 1]

Ba
###High thermoelectric performance of half-Heusler compound BiBaK with intrinsically low lattice thermal conductivity|S. H. Han,Z. Z. Zhou,C. Y. Sheng,J. H. Liu,L. Wang,H. M. Yuan,H. J. Liu###
(55907, 55907)
 Detailed analysis indicates that the heavy Bi and Ba atoms form acage-like structure, inside which the light K atom rattles with larger atomicdisplacement parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 1.9, 'at', 1],[83.0, 900, 'K', 1]

K
###High thermoelectric performance of half-Heusler compound BiBaK with intrinsically low lattice thermal conductivity|S. H. Han,Z. Z. Zhou,C. Y. Sheng,J. H. Liu,L. Wang,H. M. Yuan,H. J. Liu###
(55931, 55931)
 Detailed analysis indicates that the heavy Bi and Ba atoms form acage-like structure, inside which the light K atom rattles with larger atomicdisplacement parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1.9, 'at', 1],[59.0, 900, 'K', 1]

In
###High thermoelectric performance of half-Heusler compound BiBaK with intrinsically low lattice thermal conductivity|S. H. Han,Z. Z. Zhou,C. Y. Sheng,J. H. Liu,L. Wang,H. M. Yuan,H. J. Liu###
(55949, 55949)
 In combination with its good electronic transportproperties, the BiBaK shows a maximum n<missing VAR>-type ZT value of 1.9 at 900 K, whichoutperforms most half-Heusler thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1.9, 'at', 0],[41.0, 900, 'K', 0]

BiBaK
###High thermoelectric performance of half-Heusler compound BiBaK with intrinsically low lattice thermal conductivity|S. H. Han,Z. Z. Zhou,C. Y. Sheng,J. H. Liu,L. Wang,H. M. Yuan,H. J. Liu###
(55969, 55971)
 In combination with its good electronic transportproperties, the BiBaK shows a maximum n<missing VAR>-type ZT value of 1.9 at 900 K, whichoutperforms most half-Heusler thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1.9, 'at', 0],[19.0, 900, 'K', 0]

P
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56042, 56042)
Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 50, '%', 2]

Cs
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56045, 56045)
Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 50, '%', 2]

P
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56072, 56072)
 Post-transition metal chalcogenides (PTMCs) such as GaSe, GaS, InSe, and InShave been proposed as promising thermoelectric materials due to low latticeconductivity, originating from the atomically layered structure, high Seebeckcoefficient, and the anticipation that its figure-of-merit be improved whenthinned to few-layers as the band structure turns into Mexican-hat valence band(M<missing VAR>HVB).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 50, '%', 1]

Cs
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56075, 56075)
 Post-transition metal chalcogenides (PTMCs) such as GaSe, GaS, InSe, and InShave been proposed as promising thermoelectric materials due to low latticeconductivity, originating from the atomically layered structure, high Seebeckcoefficient, and the anticipation that its figure-of-merit be improved whenthinned to few-layers as the band structure turns into Mexican-hat valence band(M<missing VAR>HVB).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 50, '%', 1]

GaSe
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56082, 56083)
 Post-transition metal chalcogenides (PTMCs) such as GaSe, GaS, InSe, and InShave been proposed as promising thermoelectric materials due to low latticeconductivity, originating from the atomically layered structure, high Seebeckcoefficient, and the anticipation that its figure-of-merit be improved whenthinned to few-layers as the band structure turns into Mexican-hat valence band(M<missing VAR>HVB).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 50, '%', 1]

GaS
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56086, 56087)
 Post-transition metal chalcogenides (PTMCs) such as GaSe, GaS, InSe, and InShave been proposed as promising thermoelectric materials due to low latticeconductivity, originating from the atomically layered structure, high Seebeckcoefficient, and the anticipation that its figure-of-merit be improved whenthinned to few-layers as the band structure turns into Mexican-hat valence band(M<missing VAR>HVB).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 50, '%', 1]

InSe
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56090, 56091)
 Post-transition metal chalcogenides (PTMCs) such as GaSe, GaS, InSe, and InShave been proposed as promising thermoelectric materials due to low latticeconductivity, originating from the atomically layered structure, high Seebeckcoefficient, and the anticipation that its figure-of-merit be improved whenthinned to few-layers as the band structure turns into Mexican-hat valence band(M<missing VAR>HVB).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 50, '%', 1]

InS
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56096, 56097)
 Post-transition metal chalcogenides (PTMCs) such as GaSe, GaS, InSe, and InShave been proposed as promising thermoelectric materials due to low latticeconductivity, originating from the atomically layered structure, high Seebeckcoefficient, and the anticipation that its figure-of-merit be improved whenthinned to few-layers as the band structure turns into Mexican-hat valence band(M<missing VAR>HVB).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 50, '%', 1]

B
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56203, 56203)
 Post-transition metal chalcogenides (PTMCs) such as GaSe, GaS, InSe, and InShave been proposed as promising thermoelectric materials due to low latticeconductivity, originating from the atomically layered structure, high Seebeckcoefficient, and the anticipation that its figure-of-merit be improved whenthinned to few-layers as the band structure turns into Mexican-hat valence band(M<missing VAR>HVB).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 50, '%', 1]

HVB
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56226, 56228)
 Here we show by ab initio calculations that the M<missing VAR>HVB should be presenteven on thick films of InSe/GaSe type-II heterostructures, and a 50%enhancement on thermoelectric figure-of-merit zT at room-temperature isexpected when compared with bulk InSe.
Featurization terminated normally.
0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 50, '%', 0]

InSe/GaSe
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56247, 56251)
 Here we show by ab initio calculations that the M<missing VAR>HVB should be presenteven on thick films of InSe/GaSe type-II heterostructures, and a 50%enhancement on thermoelectric figure-of-merit zT at room-temperature isexpected when compared with bulk InSe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 50, '%', 0]

II
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56255, 56256)
 Here we show by ab initio calculations that the M<missing VAR>HVB should be presenteven on thick films of InSe/GaSe type-II heterostructures, and a 50%enhancement on thermoelectric figure-of-merit zT at room-temperature isexpected when compared with bulk InSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 50, '%', 0]

InSe
###Sharp enhancement on thermoelectric figure-of-merit of post-transition metal chalcogenides (PTMCs) using heterostructures with Mexican-hat valence band|Marcel S Claro###
(56303, 56304)
 Here we show by ab initio calculations that the M<missing VAR>HVB should be presenteven on thick films of InSe/GaSe type-II heterostructures, and a 50%enhancement on thermoelectric figure-of-merit zT at room-temperature isexpected when compared with bulk InSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 50, '%', 0]

Hf
###High thermoelectric figure of merit in p-type Half-Heuslers by intrinsic phase separation|Elisabeth Rausch,Siham Ouardi,Ulrich Burkhardt,Claudia Felser,Jana Marie Stahlhofen,Benjamin Balke###
(56436, 56436)
 A detailedstudy of the p<missing VAR>-type Half-Heusler compounds Ti(1-x)Hf(x)CoSb0.85Sn0.15 usinghigh-resolution synchrotron powder X<missing VAR>-ray diffraction and element mappingelectron microscopy evidences the outstanding thermoelectric properties of thissystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 710, 'C', 1]

CoSb0.85Sn0.15
###High thermoelectric figure of merit in p-type Half-Heuslers by intrinsic phase separation|Elisabeth Rausch,Siham Ouardi,Ulrich Burkhardt,Claudia Felser,Jana Marie Stahlhofen,Benjamin Balke###
(56440, 56444)
 A detailedstudy of the p<missing VAR>-type Half-Heusler compounds Ti(1-x)Hf(x)CoSb0.85Sn0.15 usinghigh-resolution synchrotron powder X<missing VAR>-ray diffraction and element mappingelectron microscopy evidences the outstanding thermoelectric properties of thissystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.075,0.425,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 710, 'C', 1]

Sn
###High thermoelectric figure of merit in p-type Half-Heuslers by intrinsic phase separation|Elisabeth Rausch,Siham Ouardi,Ulrich Burkhardt,Claudia Felser,Jana Marie Stahlhofen,Benjamin Balke###
(56519, 56519)
 A combination of intrinsic phase separation and adjustment of thecarrier concentration via Sn substitution is used to realize a recordthermoelectric figure of merit for p<missing VAR>-type Half-Heusler compounds of ZT around1.15 at 710C in Ti0.25Hf0.75CoSb0.85Sn0.15.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 710, 'C', 0]

Ti0.25Hf0.75CoSb0.85Sn0.15
###High thermoelectric figure of merit in p-type Half-Heuslers by intrinsic phase separation|Elisabeth Rausch,Siham Ouardi,Ulrich Burkhardt,Claudia Felser,Jana Marie Stahlhofen,Benjamin Balke###
(56571, 56579)
 A combination of intrinsic phase separation and adjustment of thecarrier concentration via Sn substitution is used to realize a recordthermoelectric figure of merit for p<missing VAR>-type Half-Heusler compounds of ZT around1.15 at 710C in Ti0.25Hf0.75CoSb0.85Sn0.15.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.049999999999999996,0.2833333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 710, 'C', 0]

B
###Strain effects to optimize the thermoelectric properties of hole-doped La$_2$NiO$_{4+δ}$ via ab initio calculations|Victor Pardo,Antia S. Botana,Daniel Baldomir###
(56704, 56704)
 B 86, 165114 (2012)] via ab initio calculations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 86, ',', 0],[173.0, 1, 'in', 4],[193.0, 0.1, 'and', 4]

In
###Strain effects to optimize the thermoelectric properties of hole-doped La$_2$NiO$_{4+δ}$ via ab initio calculations|Victor Pardo,Antia S. Botana,Daniel Baldomir###
(56923, 56923)
 In thatrelatively wide range of parameters, thermopower values close to 200 muV/Kare obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 86, ',', 5],[46.0, 1, 'in', 1],[26.0, 0.1, 'and', 1]

V/K
###Strain effects to optimize the thermoelectric properties of hole-doped La$_2$NiO$_{4+δ}$ via ab initio calculations|Victor Pardo,Antia S. Botana,Daniel Baldomir###
(56950, 56952)
 In thatrelatively wide range of parameters, thermopower values close to 200 muV/Kare obtained.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[244.0, 86, ',', 5],[73.0, 1, 'in', 1],[53.0, 0.1, 'and', 1]

TeSe2
###Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes|Munish Sharma###
(57015, 57017)
Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1.6, 'eV', 4],[199.0, 4, 'V', 7],[244.0, 3.1, 'with', 8]

TeSe2
###Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes|Munish Sharma###
(57070, 57072)
 Here, we demonstrate thermoelectricperformance of allotropic TeSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1.6, 'eV', 2],[144.0, 4, 'V', 5],[189.0, 3.1, 'with', 6]

TeSe2
###Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes|Munish Sharma###
(57107, 57109)
 Based on the first-principle calculations, weconfirm the energetic and kinetic stability of five TeSe2 allotropes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1.6, 'eV', 1],[107.0, 4, 'V', 4],[152.0, 3.1, 'with', 5]

TeSe2
###Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes|Munish Sharma###
(57121, 57123)
 Wepredict delta-TeSe2 as a new direct band gap semiconductor having 1.60 eVdirect band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1.6, 'eV', 0],[93.0, 4, 'V', 3],[138.0, 3.1, 'with', 4]

TeSe2
###Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes|Munish Sharma###
(57154, 57156)
 All the TeSe2 allotropes exhibit band gap in UV-Vis region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1.6, 'eV', 1],[60.0, 4, 'V', 2],[105.0, 3.1, 'with', 3]

UV
###Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes|Munish Sharma###
(57168, 57169)
 All the TeSe2 allotropes exhibit band gap in UV-Vis region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[28.0, 1.6, 'eV', 1],[47.0, 4, 'V', 2],[92.0, 3.1, 'with', 3]

K
###Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes|Munish Sharma###
(57218, 57218)
 The room temperature Seebeck coefficient is maximum of 4 V/K fordelta-TeSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 1.6, 'eV', 3],[2.0, 4, 'V', 0],[43.0, 3.1, 'with', 1]

TeSe2
###Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes|Munish Sharma###
(57225, 57227)
 The room temperature Seebeck coefficient is maximum of 4 V/K fordelta-TeSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 1.6, 'eV', 3],[9.0, 4, 'V', 0],[34.0, 3.1, 'with', 1]

TeSe2
###Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes|Munish Sharma###
(57273, 57275)
 We show that room temperature thermoelectric figure of merit(ZT) can reach up to 3.1 with p<missing VAR>-type doping in delta-TeSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1.6, 'eV', 4],[57.0, 4, 'V', 1],[12.0, 3.1, 'with', 0]

TeSe2
###Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes|Munish Sharma###
(57303, 57305)
 Moreover,temperature and chemical potential tuning extends the thermoelectricperformance of TeSe2 allotropes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 1.6, 'eV', 5],[87.0, 4, 'V', 2],[42.0, 3.1, 'with', 1]

TeSe2
###Stability, Tunneling Characteristics and Thermoelectric Properties of TeSe2 allotropes|Munish Sharma###
(57358, 57360)
 We strongly believe that our study iscompelling from an experimental perspective and holds a key towards fabricationof thermoelectric devices based on TeSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 1.6, 'eV', 6],[142.0, 4, 'V', 3],[97.0, 3.1, 'with', 2]

K
###Thermoelectric phenomenon in hollow blocks|M. Wehbe,J. Dgheim,E. Sassine###
(57552, 57552)
 Results showed a voltage of 5.85mV producedfrom a single 8.6 x 0.4 x 0.4 cm3 thermoelectric leg made of Bismuth AntimonyTelluride for DeltaT<missing VAR>30K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 5.85, 'mV', 0],[25.0, 8.6, 'x', 0],[24.0, 0.4, 'x', 0],[23.0, 0.4, 'cm', 0],[8.0, 3, 'TEGs', 1]

K
###Thermoelectric phenomenon in hollow blocks|M. Wehbe,J. Dgheim,E. Sassine###
(57604, 57604)
 A design with 3 TEGs incorporated inside a hollowblock was tested and validated numerically using both methods, the main resultsobtained for DeltaT<missing VAR>30K, showed a voltage DeltaV0.72V, a current I0.06A and a figure of merit ZT0.55.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 5.85, 'mV', 1],[77.0, 8.6, 'x', 1],[76.0, 0.4, 'x', 1],[75.0, 0.4, 'cm', 1],[44.0, 3, 'TEGs', 0]

V0.72V
###Thermoelectric phenomenon in hollow blocks|M. Wehbe,J. Dgheim,E. Sassine###
(57614, 57616)
 A design with 3 TEGs incorporated inside a hollowblock was tested and validated numerically using both methods, the main resultsobtained for DeltaT<missing VAR>30K, showed a voltage DeltaV0.72V, a current I0.06A and a figure of merit ZT0.55.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 5.85, 'mV', 1],[87.0, 8.6, 'x', 1],[86.0, 0.4, 'x', 1],[85.0, 0.4, 'cm', 1],[54.0, 3, 'TEGs', 0]

I0.06
###Thermoelectric phenomenon in hollow blocks|M. Wehbe,J. Dgheim,E. Sassine###
(57623, 57624)
 A design with 3 TEGs incorporated inside a hollowblock was tested and validated numerically using both methods, the main resultsobtained for DeltaT<missing VAR>30K, showed a voltage DeltaV0.72V, a current I0.06A and a figure of merit ZT0.55.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 5.85, 'mV', 1],[96.0, 8.6, 'x', 1],[95.0, 0.4, 'x', 1],[94.0, 0.4, 'cm', 1],[63.0, 3, 'TEGs', 0]

GeSe
###Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(58091, 58092)
Outstanding thermoelectric performance predicted for out-of-plane p<missing VAR>-doped GeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 500, 'K', 5],[264.0, 900, 'K', 6],[310.0, 4, 'x', 6]

(SnSe)
###Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(58111, 58114)
 The record-breaking thermoelectric performance of tin selenide (SnSe) hasmotivated the investigation of analogue compounds with the same structure.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 500, 'K', 4],[242.0, 900, 'K', 5],[288.0, 4, 'x', 5]

(GeSe)
###Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(58159, 58162)
 Apromising candidate that emerged recently is germanium selenide (GeSe).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 500, 'K', 3],[194.0, 900, 'K', 4],[240.0, 4, 'x', 4]

GeSe
###Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(58224, 58225)
 Here,using extensive first-principles calculations of the hole-phonon andhole-impurity scattering, we investigate the thermoelectric transportproperties of the orthorhombic phase of p<missing VAR>-doped GeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 500, 'K', 2],[131.0, 900, 'K', 3],[177.0, 4, 'x', 3]

GeSe
###Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(58241, 58242)
 We predict outstandingthermoelectric performance for GeSe over a broad range of temperatures due toits high Seebeck coefficients, extremely low Lorenz numbers, ultralow totalthermal conductivity, and relatively large band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 500, 'K', 1],[114.0, 900, 'K', 2],[160.0, 4, 'x', 2]

In
###Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(58300, 58300)
 In particular, theout-of-plane direction in GeSe presents equivalent or even higher performancethan SnSe for temperatures above 500 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 500, 'K', 0],[56.0, 900, 'K', 1],[102.0, 4, 'x', 1]

GeSe
###Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(58318, 58319)
 In particular, theout-of-plane direction in GeSe presents equivalent or even higher performancethan SnSe for temperatures above 500 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 500, 'K', 0],[37.0, 900, 'K', 1],[83.0, 4, 'x', 1]

SnSe
###Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(58336, 58337)
 In particular, theout-of-plane direction in GeSe presents equivalent or even higher performancethan SnSe for temperatures above 500 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 500, 'K', 0],[19.0, 900, 'K', 1],[65.0, 4, 'x', 1]

GeSe
###Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe|Anderson S. Chaves,Daniel T. Larson,Efthimios Kaxiras,Alex Antonelli###
(58438, 58439)
 Our work provides strongmotivation for continued experimental work focusing on improving the GeSedoping efficiency in order to achieve this optimal hole density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 500, 'K', 2],[82.0, 900, 'K', 1],[36.0, 4, 'x', 1]

Mg
###Thermoelectric Properties of Mg doped Mercury Selenide HgSe|Y. Selmani,H. Labrim,A. Jabar,L. Bahmad###
(58477, 58477)
Thermoelectric Properties of Mg doped Mercury Selenide HgSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgSe
###Thermoelectric Properties of Mg doped Mercury Selenide HgSe|Y. Selmani,H. Labrim,A. Jabar,L. Bahmad###
(58485, 58486)
Thermoelectric Properties of Mg doped Mercury Selenide HgSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Thermoelectric Properties of Mg doped Mercury Selenide HgSe|Y. Selmani,H. Labrim,A. Jabar,L. Bahmad###
(58525, 58525)
 Using the density functional theory (DFT) in combination with Boltzmanntransport theory, the influence of Mg concentrations (x) doping on thethermoelectric properties of Hg1-xMgxSe ternary alloys was systematicallyinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg1-x
###Thermoelectric Properties of Mg doped Mercury Selenide HgSe|Y. Selmani,H. Labrim,A. Jabar,L. Bahmad###
(58546, 58549)
 Using the density functional theory (DFT) in combination with Boltzmanntransport theory, the influence of Mg concentrations (x) doping on thethermoelectric properties of Hg1-xMgxSe ternary alloys was systematicallyinvestigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Se
###Thermoelectric Properties of Mg doped Mercury Selenide HgSe|Y. Selmani,H. Labrim,A. Jabar,L. Bahmad###
(58551, 58551)
 Using the density functional theory (DFT) in combination with Boltzmanntransport theory, the influence of Mg concentrations (x) doping on thethermoelectric properties of Hg1-xMgxSe ternary alloys was systematicallyinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PB
###Thermoelectric Properties of Mg doped Mercury Selenide HgSe|Y. Selmani,H. Labrim,A. Jabar,L. Bahmad###
(58587, 58588)
 The generalized gradient approximations of Perdew-Burke-Ernzerhof(GGA-PBE) have been used to illustrate the exchange correlation potential.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(S)
###Thermoelectric Properties of Mg doped Mercury Selenide HgSe|Y. Selmani,H. Labrim,A. Jabar,L. Bahmad###
(58632, 58634)
Various thermoelectric transport parameters, such as the Seebeck coefficient(S), the thermal conductivity over relaxation time, the electrical conductivityover relaxation time, the power factor (PF) and the figure of merit (ZT) havebeen deduced and discussed.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PF)
###Thermoelectric Properties of Mg doped Mercury Selenide HgSe|Y. Selmani,H. Labrim,A. Jabar,L. Bahmad###
(58670, 58673)
Various thermoelectric transport parameters, such as the Seebeck coefficient(S), the thermal conductivity over relaxation time, the electrical conductivityover relaxation time, the power factor (PF) and the figure of merit (ZT) havebeen deduced and discussed.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Thermoelectric Properties of Mg doped Mercury Selenide HgSe|Y. Selmani,H. Labrim,A. Jabar,L. Bahmad###
(58753, 58753)
 It is also found that Mg compositions can increase thethermal efficiency of the HgSe alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgSe
###Thermoelectric Properties of Mg doped Mercury Selenide HgSe|Y. Selmani,H. Labrim,A. Jabar,L. Bahmad###
(58772, 58773)
 It is also found that Mg compositions can increase thethermal efficiency of the HgSe alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermoelectric power factor of nanocomposite materials from two-dimensional quantum transport simulations|Samuel Foster,Mischa Thesberg,Neophytos Neophytou###
(58941, 58941)
 In this work we employ theNon-Equilibrium Greens Function (NEGF) quantum transport method to calculatethe electronic and thermoelectric coefficients of materials embedded withnanoinclusions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric power factor of nanocomposite materials from two-dimensional quantum transport simulations|Samuel Foster,Mischa Thesberg,Neophytos Neophytou###
(58963, 58963)
 In this work we employ theNon-Equilibrium Greens Function (NEGF) quantum transport method to calculatethe electronic and thermoelectric coefficients of materials embedded withnanoinclusions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Thermoelectric power factor of nanocomposite materials from two-dimensional quantum transport simulations|Samuel Foster,Mischa Thesberg,Neophytos Neophytou###
(58966, 58966)
 In this work we employ theNon-Equilibrium Greens Function (NEGF) quantum transport method to calculatethe electronic and thermoelectric coefficients of materials embedded withnanoinclusions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfS2
###Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering|H. Y. Lv,W. J. Lu,X. Luo,H. Y. Lu,X. B. Zhu,Y. P. Sun###
(59398, 59400)
Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 6, '%', 5],[276.0, 3.67, ',', 5]

HfS2
###Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering|H. Y. Lv,W. J. Lu,X. Luo,H. Y. Lu,X. B. Zhu,Y. P. Sun###
(59434, 59436)
 The electronic, phonon, and thermoelectric properties of a two-dimensionalHfS2 monolayer are investigated by using the first-principles calculationscombined with the Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 6, '%', 4],[240.0, 3.67, ',', 4]

HfS2
###Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering|H. Y. Lv,W. J. Lu,X. Luo,H. Y. Lu,X. B. Zhu,Y. P. Sun###
(59480, 59482)
 The band valleys of the HfS2monolayer can be effectively tuned by the applied biaxial strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 6, '%', 3],[194.0, 3.67, ',', 3]

HfS2
###Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering|H. Y. Lv,W. J. Lu,X. Luo,H. Y. Lu,X. B. Zhu,Y. P. Sun###
(59585, 59587)
 When no strain is applied, the HfS2 monolayer is anexcellent n<missing VAR>-type thermoelectric material, while the thermoelectric performanceof the p<missing VAR>-type doped one is poor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 6, '%', 1],[89.0, 3.67, ',', 1]

HfS2
###Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering|H. Y. Lv,W. J. Lu,X. Luo,H. Y. Lu,X. B. Zhu,Y. P. Sun###
(59780, 59782)
 Our results indicate that the thermoelectricperformance of the HfS2 monolayer can be greatly improved by the valleyengineering through the method of strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 6, '%', 2],[104.0, 3.67, ',', 2]

Sb
###Mg$_{3+δ}$Sb$_x$Bi$_{2-x}$ family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature|Rui Shu,Yecheng Zhou,Qi Wang,Zhijia Han,Yongbin Zhu,Yong Liu,Yuexing Chen,Meng Gu,Wei Xu,Yu Wang,Wenqing Zhang,Li Huang,Weishu Liu###
(59825, 59825)
Mg3+Sbx<missing VAR>Bi2-x family A promising substitute for the start-of-art n<missing VAR>-type thermoelectric materials near room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2-x
###Mg$_{3+δ}$Sb$_x$Bi$_{2-x}$ family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature|Rui Shu,Yecheng Zhou,Qi Wang,Zhijia Han,Yongbin Zhu,Yong Liu,Yuexing Chen,Meng Gu,Wei Xu,Yu Wang,Wenqing Zhang,Li Huang,Weishu Liu###
(59827, 59830)
Mg3+Sbx<missing VAR>Bi2-x family A promising substitute for the start-of-art n<missing VAR>-type thermoelectric materials near room temperature.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Bi2Te3-x
###Mg$_{3+δ}$Sb$_x$Bi$_{2-x}$ family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature|Rui Shu,Yecheng Zhou,Qi Wang,Zhijia Han,Yongbin Zhu,Yong Liu,Yuexing Chen,Meng Gu,Wei Xu,Yu Wang,Wenqing Zhang,Li Huang,Weishu Liu###
(59865, 59870)
 Bi2Te3-xSex family has been the n<missing VAR>-type start-of-the-art thermoelectricmaterials near room temperatures (RT) for more than half-century, whichdominates the active cooling and novel waves harvesting application near RT.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Te
###Mg$_{3+δ}$Sb$_x$Bi$_{2-x}$ family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature|Rui Shu,Yecheng Zhou,Qi Wang,Zhijia Han,Yongbin Zhu,Yong Liu,Yuexing Chen,Meng Gu,Wei Xu,Yu Wang,Wenqing Zhang,Li Huang,Weishu Liu###
(59963, 59963)
However, the drawbacks of brittle nature and Te-containing restrict the furtherapplications exploring.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2-x
###Mg$_{3+δ}$Sb$_x$Bi$_{2-x}$ family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature|Rui Shu,Yecheng Zhou,Qi Wang,Zhijia Han,Yongbin Zhu,Yong Liu,Yuexing Chen,Meng Gu,Wei Xu,Yu Wang,Wenqing Zhang,Li Huang,Weishu Liu###
(59995, 59998)
 Here, we show that a Mg3+deltaSbxBi2-x family((ZT)avg 1.05) could be a promising substitute for the Bi2Te3-xSex family((ZT)avg 0.9-1.0) in the temperature range of 50-250 degC based on thecomparable thermoelectric performance through a synergistic effect from thetunable band gap using the alloy effect and the suppressible Mg-vacancyformation using interstitial Mn dopant.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Bi2Te3-x
###Mg$_{3+δ}$Sb$_x$Bi$_{2-x}$ family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature|Rui Shu,Yecheng Zhou,Qi Wang,Zhijia Han,Yongbin Zhu,Yong Liu,Yuexing Chen,Meng Gu,Wei Xu,Yu Wang,Wenqing Zhang,Li Huang,Weishu Liu###
(60027, 60032)
 Here, we show that a Mg3+deltaSbxBi2-x family((ZT)avg 1.05) could be a promising substitute for the Bi2Te3-xSex family((ZT)avg 0.9-1.0) in the temperature range of 50-250 degC based on thecomparable thermoelectric performance through a synergistic effect from thetunable band gap using the alloy effect and the suppressible Mg-vacancyformation using interstitial Mn dopant.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

C
###Mg$_{3+δ}$Sb$_x$Bi$_{2-x}$ family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature|Rui Shu,Yecheng Zhou,Qi Wang,Zhijia Han,Yongbin Zhu,Yong Liu,Yuexing Chen,Meng Gu,Wei Xu,Yu Wang,Wenqing Zhang,Li Huang,Weishu Liu###
(60065, 60065)
 Here, we show that a Mg3+deltaSbxBi2-x family((ZT)avg 1.05) could be a promising substitute for the Bi2Te3-xSex family((ZT)avg 0.9-1.0) in the temperature range of 50-250 degC based on thecomparable thermoelectric performance through a synergistic effect from thetunable band gap using the alloy effect and the suppressible Mg-vacancyformation using interstitial Mn dopant.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Mg$_{3+δ}$Sb$_x$Bi$_{2-x}$ family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature|Rui Shu,Yecheng Zhou,Qi Wang,Zhijia Han,Yongbin Zhu,Yong Liu,Yuexing Chen,Meng Gu,Wei Xu,Yu Wang,Wenqing Zhang,Li Huang,Weishu Liu###
(60113, 60113)
 Here, we show that a Mg3+deltaSbxBi2-x family((ZT)avg 1.05) could be a promising substitute for the Bi2Te3-xSex family((ZT)avg 0.9-1.0) in the temperature range of 50-250 degC based on thecomparable thermoelectric performance through a synergistic effect from thetunable band gap using the alloy effect and the suppressible Mg-vacancyformation using interstitial Mn dopant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Mg$_{3+δ}$Sb$_x$Bi$_{2-x}$ family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature|Rui Shu,Yecheng Zhou,Qi Wang,Zhijia Han,Yongbin Zhu,Yong Liu,Yuexing Chen,Meng Gu,Wei Xu,Yu Wang,Wenqing Zhang,Li Huang,Weishu Liu###
(60124, 60124)
 Here, we show that a Mg3+deltaSbxBi2-x family((ZT)avg 1.05) could be a promising substitute for the Bi2Te3-xSex family((ZT)avg 0.9-1.0) in the temperature range of 50-250 degC based on thecomparable thermoelectric performance through a synergistic effect from thetunable band gap using the alloy effect and the suppressible Mg-vacancyformation using interstitial Mn dopant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3-x
###Mg$_{3+δ}$Sb$_x$Bi$_{2-x}$ family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature|Rui Shu,Yecheng Zhou,Qi Wang,Zhijia Han,Yongbin Zhu,Yong Liu,Yuexing Chen,Meng Gu,Wei Xu,Yu Wang,Wenqing Zhang,Li Huang,Weishu Liu###
(60276, 60281)
 Furthermore, a twotimes higher mechanical toughness, compared with Bi2Te3-xSex family,consolidates the promising substitute for the start-of-art n<missing VAR>-typethermoelectric materials near RT.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

SnSe
###Thermoelectricity of Tin Selenide Monolayers Across a Structural Phase Transition|John W. Villanova,Salvador Barraza-Lopez###
(60350, 60351)
 SnSe monolayers experience a temperature induced two-dimensional Pnm21 toP4/nmm structural transformation precipitated by the softening of vibrationalmodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P4
###Thermoelectricity of Tin Selenide Monolayers Across a Structural Phase Transition|John W. Villanova,Salvador Barraza-Lopez###
(60374, 60375)
 SnSe monolayers experience a temperature induced two-dimensional Pnm21 toP4/nmm structural transformation precipitated by the softening of vibrationalmodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Thermoelectricity of Tin Selenide Monolayers Across a Structural Phase Transition|John W. Villanova,Salvador Barraza-Lopez###
(60685, 60686)
 Though exemplified on a SnSe monolayer, themethod does not have any built-in assumptions concerning dimensionality, andthus applicable to arbitrary thermoelectric materials in one, two, and threedimensions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RhTiP
###Rhodium based half-Heusler alloys as possible optoelectronic and thermoelectric materials|Dhurba Raj Jaishi,Sujit Bati,Nileema Sharma,Bishnu Karki,Bishnu Prasad Belbase,Madhav Prasad Ghimire###
(60855, 60857)
 On the basis of density functional theory and semi-classical Boltzmanntheory, we have investigated the structural, elastic, electronic, optical andthermoelectric properties of 18--valence electron count rhodium basedhalf-Heusler alloys focusing on RhTiP, RhTiAs, RhTiSb, and RhTiBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 0.94, 'to', 3],[111.0, 1.01, 'eV', 3],[312.0, 0.38, 'to', 7],[313.0, 0.67, 'are', 7]

RhTiAs
###Rhodium based half-Heusler alloys as possible optoelectronic and thermoelectric materials|Dhurba Raj Jaishi,Sujit Bati,Nileema Sharma,Bishnu Karki,Bishnu Prasad Belbase,Madhav Prasad Ghimire###
(60860, 60862)
 On the basis of density functional theory and semi-classical Boltzmanntheory, we have investigated the structural, elastic, electronic, optical andthermoelectric properties of 18--valence electron count rhodium basedhalf-Heusler alloys focusing on RhTiP, RhTiAs, RhTiSb, and RhTiBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.94, 'to', 3],[106.0, 1.01, 'eV', 3],[307.0, 0.38, 'to', 7],[308.0, 0.67, 'are', 7]

RhTiSb
###Rhodium based half-Heusler alloys as possible optoelectronic and thermoelectric materials|Dhurba Raj Jaishi,Sujit Bati,Nileema Sharma,Bishnu Karki,Bishnu Prasad Belbase,Madhav Prasad Ghimire###
(60865, 60867)
 On the basis of density functional theory and semi-classical Boltzmanntheory, we have investigated the structural, elastic, electronic, optical andthermoelectric properties of 18--valence electron count rhodium basedhalf-Heusler alloys focusing on RhTiP, RhTiAs, RhTiSb, and RhTiBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.94, 'to', 3],[101.0, 1.01, 'eV', 3],[302.0, 0.38, 'to', 7],[303.0, 0.67, 'are', 7]

RhTiBi
###Rhodium based half-Heusler alloys as possible optoelectronic and thermoelectric materials|Dhurba Raj Jaishi,Sujit Bati,Nileema Sharma,Bishnu Karki,Bishnu Prasad Belbase,Madhav Prasad Ghimire###
(60872, 60874)
 On the basis of density functional theory and semi-classical Boltzmanntheory, we have investigated the structural, elastic, electronic, optical andthermoelectric properties of 18--valence electron count rhodium basedhalf-Heusler alloys focusing on RhTiP, RhTiAs, RhTiSb, and RhTiBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.94, 'to', 3],[94.0, 1.01, 'eV', 3],[295.0, 0.38, 'to', 7],[296.0, 0.67, 'are', 7]

RhTiP
###Rhodium based half-Heusler alloys as possible optoelectronic and thermoelectric materials|Dhurba Raj Jaishi,Sujit Bati,Nileema Sharma,Bishnu Karki,Bishnu Prasad Belbase,Madhav Prasad Ghimire###
(60918, 60920)
 RhTiP is ductile in nature, whileothers are brittle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 0.94, 'to', 1],[48.0, 1.01, 'eV', 1],[249.0, 0.38, 'to', 5],[250.0, 0.67, 'are', 5]

RhTiBi
###Rhodium based half-Heusler alloys as possible optoelectronic and thermoelectric materials|Dhurba Raj Jaishi,Sujit Bati,Nileema Sharma,Bishnu Karki,Bishnu Prasad Belbase,Madhav Prasad Ghimire###
(61117, 61119)
 The optimum figureof merit zt is sim1 for RhTiBi suggesting it as a promising candidate forthermoelectric applications while RhTiP, RhTiAs, and RhTiSb with optimum zt values between 0.38 to 0.67 are possible candidates for use in thermoelectricdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 0.94, 'to', 4],[149.0, 1.01, 'eV', 4],[50.0, 0.38, 'to', 0],[51.0, 0.67, 'are', 0]

RhTiP
###Rhodium based half-Heusler alloys as possible optoelectronic and thermoelectric materials|Dhurba Raj Jaishi,Sujit Bati,Nileema Sharma,Bishnu Karki,Bishnu Prasad Belbase,Madhav Prasad Ghimire###
(61142, 61144)
 The optimum figureof merit zt is sim1 for RhTiBi suggesting it as a promising candidate forthermoelectric applications while RhTiP, RhTiAs, and RhTiSb with optimum zt values between 0.38 to 0.67 are possible candidates for use in thermoelectricdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 0.94, 'to', 4],[174.0, 1.01, 'eV', 4],[25.0, 0.38, 'to', 0],[26.0, 0.67, 'are', 0]

RhTiAs
###Rhodium based half-Heusler alloys as possible optoelectronic and thermoelectric materials|Dhurba Raj Jaishi,Sujit Bati,Nileema Sharma,Bishnu Karki,Bishnu Prasad Belbase,Madhav Prasad Ghimire###
(61147, 61149)
 The optimum figureof merit zt is sim1 for RhTiBi suggesting it as a promising candidate forthermoelectric applications while RhTiP, RhTiAs, and RhTiSb with optimum zt values between 0.38 to 0.67 are possible candidates for use in thermoelectricdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.94, 'to', 4],[179.0, 1.01, 'eV', 4],[20.0, 0.38, 'to', 0],[21.0, 0.67, 'are', 0]

RhTiSb
###Rhodium based half-Heusler alloys as possible optoelectronic and thermoelectric materials|Dhurba Raj Jaishi,Sujit Bati,Nileema Sharma,Bishnu Karki,Bishnu Prasad Belbase,Madhav Prasad Ghimire###
(61154, 61156)
 The optimum figureof merit zt is sim1 for RhTiBi suggesting it as a promising candidate forthermoelectric applications while RhTiP, RhTiAs, and RhTiSb with optimum zt values between 0.38 to 0.67 are possible candidates for use in thermoelectricdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 0.94, 'to', 4],[186.0, 1.01, 'eV', 4],[13.0, 0.38, 'to', 0],[14.0, 0.67, 'are', 0]

S
###Control of thermoelectric properties of phase-coherent molecular wires|Víctor M. García-Suarez,Colin J. Lambert,David Zs. Manrique,Thomas Wandlowski###
(61267, 61267)
 We demonstrate how redox control of intra-molecular quantum interference inphase-coherent molecular wires can be used to enhance the thermopower (Seebeckcoefficient) S and thermoelectric figure of merit ZT of single moleculesattached to nanogap electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[488.0, 1, 'and', 7]

(OPEs)
###Control of thermoelectric properties of phase-coherent molecular wires|Víctor M. García-Suarez,Colin J. Lambert,David Zs. Manrique,Thomas Wandlowski###
(61349, 61353)
 Using first principles theory, we study thethermoelectric properties of a family of nine molecules, which consist ofdithiol-terminated oligo(phenylene-ethynylenes) (OPEs) containing variouscentral units.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[402.0, 1, 'and', 6]

S
###Control of thermoelectric properties of phase-coherent molecular wires|Víctor M. García-Suarez,Colin J. Lambert,David Zs. Manrique,Thomas Wandlowski###
(61444, 61444)
 We demonstrate that both S and the electronic contribution ZelT<missing VAR>to the figure of merit ZT can be dramatically enhanced by oxidizing thehydroquinone to yield a second molecule, which possesses a cross-conjugatedanthraquinone central unit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 1, 'and', 4]

S
###Control of thermoelectric properties of phase-coherent molecular wires|Víctor M. García-Suarez,Colin J. Lambert,David Zs. Manrique,Thomas Wandlowski###
(61619, 61619)
Comparison with thermoelectric properties of the remaining seven conjugatedmolecules demonstrates that such large values of S and ZelT<missing VAR> are unprecedented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1, 'and', 2]

Cd3As2
###Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2|Tong Zhou,Cheng Zhang,Huisheng Zhang,Faxian Xiu,Zhongqin Yang###
(61812, 61815)
Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 0.5, 'at', 5],[206.0, -3, ',', 5],[361.0, 0.5, 'obtained', 6],[370.0, 500, 'K', 6]

Cd3As2
###Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2|Tong Zhou,Cheng Zhang,Huisheng Zhang,Faxian Xiu,Zhongqin Yang###
(61848, 61851)
 We report an investigation of temperature- and doping-dependentthermoelectric behaviors of topological semimetal Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.5, 'at', 4],[170.0, -3, ',', 4],[325.0, 0.5, 'obtained', 5],[334.0, 500, 'K', 5]

Cd3As2
###Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2|Tong Zhou,Cheng Zhang,Huisheng Zhang,Faxian Xiu,Zhongqin Yang###
(61916, 61919)
 The calculatedthermoelectric properties of the pristine Cd3As2 match well the experimentalresults.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0.5, 'at', 2],[102.0, -3, ',', 2],[257.0, 0.5, 'obtained', 3],[266.0, 500, 'K', 3]

Cd3As2
###Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2|Tong Zhou,Cheng Zhang,Huisheng Zhang,Faxian Xiu,Zhongqin Yang###
(61985, 61988)
 The optimum merit ZT ofCd3As2 with electron doping is found to be about 0.5 at T<missing VAR>700 K with n1x1020cm-3, much larger than the maximum experimental value obtained for the pristineCd3As2 (0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.5, 'at', 0],[33.0, -3, ',', 0],[188.0, 0.5, 'obtained', 1],[197.0, 500, 'K', 1]

K
###Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2|Tong Zhou,Cheng Zhang,Huisheng Zhang,Faxian Xiu,Zhongqin Yang###
(62010, 62010)
 The optimum merit ZT ofCd3As2 with electron doping is found to be about 0.5 at T<missing VAR>700 K with n1x1020cm-3, much larger than the maximum experimental value obtained for the pristineCd3As2 (0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.5, 'at', 0],[11.0, -3, ',', 0],[166.0, 0.5, 'obtained', 1],[175.0, 500, 'K', 1]

Cd3As2
###Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2|Tong Zhou,Cheng Zhang,Huisheng Zhang,Faxian Xiu,Zhongqin Yang###
(62048, 62051)
 The optimum merit ZT ofCd3As2 with electron doping is found to be about 0.5 at T<missing VAR>700 K with n1x1020cm-3, much larger than the maximum experimental value obtained for the pristineCd3As2 (0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.5, 'at', 0],[27.0, -3, ',', 0],[125.0, 0.5, 'obtained', 1],[134.0, 500, 'K', 1]

Cd3As2
###Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2|Tong Zhou,Cheng Zhang,Huisheng Zhang,Faxian Xiu,Zhongqin Yang###
(62066, 62069)
 For the p<missing VAR>-type Cd3As2, the maximal value of the Seebeckcoefficient as a function of temperature increases apparently with the increaseof the hole doping concentration and its position shifts drastically towardsthe lower temperature region compared to that of the n<missing VAR>-type Cd3As2, leading tothe optimum merit ZT of about 0.5 obtained at low temperature of 500K (p1x1020cm-3) in the p<missing VAR>-type Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.5, 'at', 1],[45.0, -3, ',', 1],[107.0, 0.5, 'obtained', 0],[116.0, 500, 'K', 0]

Cd3As2
###Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2|Tong Zhou,Cheng Zhang,Huisheng Zhang,Faxian Xiu,Zhongqin Yang###
(62153, 62156)
 For the p<missing VAR>-type Cd3As2, the maximal value of the Seebeckcoefficient as a function of temperature increases apparently with the increaseof the hole doping concentration and its position shifts drastically towardsthe lower temperature region compared to that of the n<missing VAR>-type Cd3As2, leading tothe optimum merit ZT of about 0.5 obtained at low temperature of 500K (p1x1020cm-3) in the p<missing VAR>-type Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.5, 'at', 1],[132.0, -3, ',', 1],[20.0, 0.5, 'obtained', 0],[29.0, 500, 'K', 0]

Cd3As2
###Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2|Tong Zhou,Cheng Zhang,Huisheng Zhang,Faxian Xiu,Zhongqin Yang###
(62207, 62210)
 For the p<missing VAR>-type Cd3As2, the maximal value of the Seebeckcoefficient as a function of temperature increases apparently with the increaseof the hole doping concentration and its position shifts drastically towardsthe lower temperature region compared to that of the n<missing VAR>-type Cd3As2, leading tothe optimum merit ZT of about 0.5 obtained at low temperature of 500K (p1x1020cm-3) in the p<missing VAR>-type Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 0.5, 'at', 1],[186.0, -3, ',', 1],[31.0, 0.5, 'obtained', 0],[22.0, 500, 'K', 0]

In
###First-principles calculation of the thermoelectric figure of merit for [2,2]paracyclophane-based single-molecule junctions|Marius Bürkle,Thomas J. Hellmuth,Fabian Pauly,Yoshihiro Asai###
(62676, 62676)
 In addition, it shows thepossibility of a chemical tuning of the thermoelectric properties for a seriesof available molecules, leading to equally performing hole- andelectron-conducting junctions based on the same molecular framework.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[434.0, 2, ',', 10],[395.0, 2, ',', 9]

Li2Sn
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(62779, 62781)
First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX<missing VAR>3(X<missing VAR>S,Se).
Featurization terminated normally.
0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 1, ',', 2],[223.0, 3, ',', 4],[278.0, 3, ',', 5],[362.0, 4, 'mWm', 6],[407.0, 300, 'K', 6],[483.0, 1.05, 'in', 8],[496.0, 700, 'K', 8]

S
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(62786, 62786)
First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX<missing VAR>3(X<missing VAR>S,Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1, ',', 2],[218.0, 3, ',', 4],[273.0, 3, ',', 5],[357.0, 4, 'mWm', 6],[402.0, 300, 'K', 6],[478.0, 1.05, 'in', 8],[491.0, 700, 'K', 8]

Se
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(62788, 62788)
First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX<missing VAR>3(X<missing VAR>S,Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1, ',', 2],[216.0, 3, ',', 4],[271.0, 3, ',', 5],[355.0, 4, 'mWm', 6],[400.0, 300, 'K', 6],[476.0, 1.05, 'in', 8],[489.0, 700, 'K', 8]

Li2Sn
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(62951, 62953)
 Here, we use first-principles methods toanalyze the thermoelectric properties of Li2SnX<missing VAR>3 (X<missing VAR>S,Se), a recentlysynthesized class of lithium fast-ion conductors presenting high thermalstability.
Featurization terminated normally.
0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1, ',', 1],[51.0, 3, ',', 1],[106.0, 3, ',', 2],[190.0, 4, 'mWm', 3],[235.0, 300, 'K', 3],[311.0, 1.05, 'in', 5],[324.0, 700, 'K', 5]

S
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(62959, 62959)
 Here, we use first-principles methods toanalyze the thermoelectric properties of Li2SnX<missing VAR>3 (X<missing VAR>S,Se), a recentlysynthesized class of lithium fast-ion conductors presenting high thermalstability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1, ',', 1],[45.0, 3, ',', 1],[100.0, 3, ',', 2],[184.0, 4, 'mWm', 3],[229.0, 300, 'K', 3],[305.0, 1.05, 'in', 5],[318.0, 700, 'K', 5]

Se
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(62961, 62961)
 Here, we use first-principles methods toanalyze the thermoelectric properties of Li2SnX<missing VAR>3 (X<missing VAR>S,Se), a recentlysynthesized class of lithium fast-ion conductors presenting high thermalstability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 1, ',', 1],[43.0, 3, ',', 1],[98.0, 3, ',', 2],[182.0, 4, 'mWm', 3],[227.0, 300, 'K', 3],[303.0, 1.05, 'in', 5],[316.0, 700, 'K', 5]

In
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(62994, 62994)
 In p<missing VAR>-type Li2SnX<missing VAR>3, we estimate highly flat electronic valencebands that render high Seebeck coefficients exceeding 400 muVK-1 at700K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1, ',', 2],[10.0, 3, ',', 0],[65.0, 3, ',', 1],[149.0, 4, 'mWm', 2],[194.0, 300, 'K', 2],[270.0, 1.05, 'in', 4],[283.0, 700, 'K', 4]

Li2Sn
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63000, 63002)
 In p<missing VAR>-type Li2SnX<missing VAR>3, we estimate highly flat electronic valencebands that render high Seebeck coefficients exceeding 400 muVK-1 at700K.
Featurization terminated normally.
0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 1, ',', 2],[2.0, 3, ',', 0],[57.0, 3, ',', 1],[141.0, 4, 'mWm', 2],[186.0, 300, 'K', 2],[262.0, 1.05, 'in', 4],[275.0, 700, 'K', 4]

VK
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63037, 63038)
 In p<missing VAR>-type Li2SnX<missing VAR>3, we estimate highly flat electronic valencebands that render high Seebeck coefficients exceeding 400 muVK-1 at700K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 1, ',', 2],[33.0, 3, ',', 0],[21.0, 3, ',', 1],[105.0, 4, 'mWm', 2],[150.0, 300, 'K', 2],[226.0, 1.05, 'in', 4],[239.0, 700, 'K', 4]

K
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63046, 63046)
 In p<missing VAR>-type Li2SnX<missing VAR>3, we estimate highly flat electronic valencebands that render high Seebeck coefficients exceeding 400 muVK-1 at700K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 1, ',', 2],[42.0, 3, ',', 0],[13.0, 3, ',', 1],[97.0, 4, 'mWm', 2],[142.0, 300, 'K', 2],[218.0, 1.05, 'in', 4],[231.0, 700, 'K', 4]

In
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63049, 63049)
 In n<missing VAR>-type Li2SnX<missing VAR>3, the electronic conduction bands are slightlydispersive however the accompanying weak electron-acoustic phonon scatteringinduces high electrical conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 1, ',', 3],[45.0, 3, ',', 1],[10.0, 3, ',', 0],[94.0, 4, 'mWm', 1],[139.0, 300, 'K', 1],[215.0, 1.05, 'in', 3],[228.0, 700, 'K', 3]

Li2Sn
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63055, 63057)
 In n<missing VAR>-type Li2SnX<missing VAR>3, the electronic conduction bands are slightlydispersive however the accompanying weak electron-acoustic phonon scatteringinduces high electrical conductivity.
Featurization terminated normally.
0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 1, ',', 3],[51.0, 3, ',', 1],[2.0, 3, ',', 0],[86.0, 4, 'mWm', 1],[131.0, 300, 'K', 1],[207.0, 1.05, 'in', 3],[220.0, 700, 'K', 3]

K
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63146, 63146)
 The combination of high Seebeckcoefficient and electrical conductivity gives rise to high power factors,reaching a maximum of 4 mWm-1K-2 in p<missing VAR>-type Li2SnS3 and 8m<missing VAR>Wm-1K-2 in n<missing VAR>-type Li2SnSe3 at 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 1, ',', 4],[142.0, 3, ',', 2],[87.0, 3, ',', 1],[3.0, 4, 'mWm', 0],[42.0, 300, 'K', 0],[118.0, 1.05, 'in', 2],[131.0, 700, 'K', 2]

Li2SnS3
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63156, 63160)
 The combination of high Seebeckcoefficient and electrical conductivity gives rise to high power factors,reaching a maximum of 4 mWm-1K-2 in p<missing VAR>-type Li2SnS3 and 8m<missing VAR>Wm-1K-2 in n<missing VAR>-type Li2SnSe3 at 300 K.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 1, ',', 4],[152.0, 3, ',', 2],[97.0, 3, ',', 1],[13.0, 4, 'mWm', 0],[28.0, 300, 'K', 0],[104.0, 1.05, 'in', 2],[117.0, 700, 'K', 2]

K
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63171, 63171)
 The combination of high Seebeckcoefficient and electrical conductivity gives rise to high power factors,reaching a maximum of 4 mWm-1K-2 in p<missing VAR>-type Li2SnS3 and 8m<missing VAR>Wm-1K-2 in n<missing VAR>-type Li2SnSe3 at 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 1, ',', 4],[167.0, 3, ',', 2],[112.0, 3, ',', 1],[28.0, 4, 'mWm', 0],[17.0, 300, 'K', 0],[93.0, 1.05, 'in', 2],[106.0, 700, 'K', 2]

Li2SnSe3
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63181, 63185)
 The combination of high Seebeckcoefficient and electrical conductivity gives rise to high power factors,reaching a maximum of 4 mWm-1K-2 in p<missing VAR>-type Li2SnS3 and 8m<missing VAR>Wm-1K-2 in n<missing VAR>-type Li2SnSe3 at 300 K.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 1, ',', 4],[177.0, 3, ',', 2],[122.0, 3, ',', 1],[38.0, 4, 'mWm', 0],[3.0, 300, 'K', 0],[79.0, 1.05, 'in', 2],[92.0, 700, 'K', 2]

Li2Sn
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63203, 63205)
 Likewise, the thermalconductivity in Li2SnX<missing VAR>3 is low as compared to conventional thermoelectricmaterials, 2-5 Wm-1K-1 at room temperature.
Featurization terminated normally.
0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 1, ',', 5],[199.0, 3, ',', 3],[144.0, 3, ',', 2],[60.0, 4, 'mWm', 1],[15.0, 300, 'K', 1],[59.0, 1.05, 'in', 1],[72.0, 700, 'K', 1]

K
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63234, 63234)
 Likewise, the thermalconductivity in Li2SnX<missing VAR>3 is low as compared to conventional thermoelectricmaterials, 2-5 Wm-1K-1 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 1, ',', 5],[230.0, 3, ',', 3],[175.0, 3, ',', 2],[91.0, 4, 'mWm', 1],[46.0, 300, 'K', 1],[30.0, 1.05, 'in', 1],[43.0, 700, 'K', 1]

As
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63245, 63245)
 As a result, we estimatea maximum zT  1.05 in p<missing VAR>-type Li2SnS3 at 700 K and an extraordinary 3.07(1.5) in n<missing VAR>-type Li2SnSe3 at the same temperature (300 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 1, ',', 6],[241.0, 3, ',', 4],[186.0, 3, ',', 3],[102.0, 4, 'mWm', 2],[57.0, 300, 'K', 2],[19.0, 1.05, 'in', 0],[32.0, 700, 'K', 0]

Li2SnS3
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63270, 63274)
 As a result, we estimatea maximum zT  1.05 in p<missing VAR>-type Li2SnS3 at 700 K and an extraordinary 3.07(1.5) in n<missing VAR>-type Li2SnSe3 at the same temperature (300 K).
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 1, ',', 6],[266.0, 3, ',', 4],[211.0, 3, ',', 3],[127.0, 4, 'mWm', 2],[82.0, 300, 'K', 2],[6.0, 1.05, 'in', 0],[3.0, 700, 'K', 0]

Li2SnSe3
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63298, 63302)
 As a result, we estimatea maximum zT  1.05 in p<missing VAR>-type Li2SnS3 at 700 K and an extraordinary 3.07(1.5) in n<missing VAR>-type Li2SnSe3 at the same temperature (300 K).
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[415.0, 1, ',', 6],[294.0, 3, ',', 4],[239.0, 3, ',', 3],[155.0, 4, 'mWm', 2],[110.0, 300, 'K', 2],[34.0, 1.05, 'in', 0],[21.0, 700, 'K', 0]

K
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63315, 63315)
 As a result, we estimatea maximum zT  1.05 in p<missing VAR>-type Li2SnS3 at 700 K and an extraordinary 3.07(1.5) in n<missing VAR>-type Li2SnSe3 at the same temperature (300 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 1, ',', 6],[311.0, 3, ',', 4],[256.0, 3, ',', 3],[172.0, 4, 'mWm', 2],[127.0, 300, 'K', 2],[51.0, 1.05, 'in', 0],[38.0, 700, 'K', 0]

Li2Sn
###First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)|Enamul Haque,Claudio Cazorla,M. Anwar Hossain###
(63333, 63335)
 Our findings ofhuge zT in Li2SnX<missing VAR>3 suggest that lithium fast-ion conductors, typicallyemployed as electrolytes in solid-state batteries, hold exceptional promise asthermoelectric materials.
Featurization terminated normally.
0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[450.0, 1, ',', 7],[329.0, 3, ',', 5],[274.0, 3, ',', 4],[190.0, 4, 'mWm', 3],[145.0, 300, 'K', 3],[69.0, 1.05, 'in', 1],[56.0, 700, 'K', 1]

CuGaTe2
###Thermoelectric properties of chalcopyrite type CuGaTe$_2$ and chalcostibite CuSbS$_2$|Vijay Kumar Gudelli,V. Kanchana,G. Vaitheeswaran,A. Svane,N. E. Christensen###
(63402, 63405)
Thermoelectric properties of chalcopyrite type CuGaTe2 and chalcostibite CuSbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 1.23, 'eV', 3],[233.0, 950, 'K', 4],[251.0, -3, ',', 4],[275.0, 1.4, ',', 4]

CuSbS2
###Thermoelectric properties of chalcopyrite type CuGaTe$_2$ and chalcostibite CuSbS$_2$|Vijay Kumar Gudelli,V. Kanchana,G. Vaitheeswaran,A. Svane,N. E. Christensen###
(63411, 63414)
Thermoelectric properties of chalcopyrite type CuGaTe2 and chalcostibite CuSbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 1.23, 'eV', 3],[224.0, 950, 'K', 4],[242.0, -3, ',', 4],[266.0, 1.4, ',', 4]

CuGaTe2
###Thermoelectric properties of chalcopyrite type CuGaTe$_2$ and chalcostibite CuSbS$_2$|Vijay Kumar Gudelli,V. Kanchana,G. Vaitheeswaran,A. Svane,N. E. Christensen###
(63427, 63430)
 Electronic and transport properties of CuGaTe2, a hole-doped ternarycopper based chalcopyrite type semiconductor, are studied using calculationswithin the Density Functional Theory and solving the Boltzmann transportequation within the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1.23, 'eV', 2],[208.0, 950, 'K', 3],[226.0, -3, ',', 3],[250.0, 1.4, ',', 3]

V
###Thermoelectric properties of chalcopyrite type CuGaTe$_2$ and chalcostibite CuSbS$_2$|Vijay Kumar Gudelli,V. Kanchana,G. Vaitheeswaran,A. Svane,N. E. Christensen###
(63582, 63582)
 Thecalculated band gap of 1.23 eV is in agreement with the experimental value of1.2 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1.23, 'eV', 0],[56.0, 950, 'K', 1],[74.0, -3, ',', 1],[98.0, 1.4, ',', 1]

CuGaTe2
###Thermoelectric properties of chalcopyrite type CuGaTe$_2$ and chalcostibite CuSbS$_2$|Vijay Kumar Gudelli,V. Kanchana,G. Vaitheeswaran,A. Svane,N. E. Christensen###
(63605, 63608)
 The carrier concentration- and temperature dependent thermoelectricproperties of CuGaTe2 are derived, and a figure of merit of zT 1.69 isobtained at 950 K for a hole concentration of 3.7cdot1019 cm-3, inagreement with a recent experimental finding of zT 1.4, confirming thatCuGaTe2 is a promising material for high temperature thermoelectricapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1.23, 'eV', 1],[30.0, 950, 'K', 0],[48.0, -3, ',', 0],[72.0, 1.4, ',', 0]

CuGaTe2
###Thermoelectric properties of chalcopyrite type CuGaTe$_2$ and chalcostibite CuSbS$_2$|Vijay Kumar Gudelli,V. Kanchana,G. Vaitheeswaran,A. Svane,N. E. Christensen###
(63688, 63691)
 The carrier concentration- and temperature dependent thermoelectricproperties of CuGaTe2 are derived, and a figure of merit of zT 1.69 isobtained at 950 K for a hole concentration of 3.7cdot1019 cm-3, inagreement with a recent experimental finding of zT 1.4, confirming thatCuGaTe2 is a promising material for high temperature thermoelectricapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1.23, 'eV', 1],[50.0, 950, 'K', 0],[32.0, -3, ',', 0],[8.0, 1.4, ',', 0]

CuGaTe2
###Thermoelectric properties of chalcopyrite type CuGaTe$_2$ and chalcostibite CuSbS$_2$|Vijay Kumar Gudelli,V. Kanchana,G. Vaitheeswaran,A. Svane,N. E. Christensen###
(63727, 63730)
 The good thermoelectric performance of p<missing VAR>-type CuGaTe2 isassociated with anisotropic transport from a combination of heavy and lightbands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 1.23, 'eV', 2],[89.0, 950, 'K', 1],[71.0, -3, ',', 1],[47.0, 1.4, ',', 1]

CuSbS2
###Thermoelectric properties of chalcopyrite type CuGaTe$_2$ and chalcostibite CuSbS$_2$|Vijay Kumar Gudelli,V. Kanchana,G. Vaitheeswaran,A. Svane,N. E. Christensen###
(63765, 63768)
 Also for CuSbS2 (chalcostibite) a better performance is obtained forp<missing VAR>-type than for n<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 1.23, 'eV', 3],[127.0, 950, 'K', 2],[109.0, -3, ',', 2],[85.0, 1.4, ',', 2]

CuSbS2
###Thermoelectric properties of chalcopyrite type CuGaTe$_2$ and chalcostibite CuSbS$_2$|Vijay Kumar Gudelli,V. Kanchana,G. Vaitheeswaran,A. Svane,N. E. Christensen###
(63831, 63834)
 The variation of the thermopower as a functionof temperature and concentration suggests that CuSbS2 will be a goodthermoelectric material at low temperatures, similarly to the isostructuralCuBiS2 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 1.23, 'eV', 4],[193.0, 950, 'K', 3],[175.0, -3, ',', 3],[151.0, 1.4, ',', 3]

CuBiS2
###Thermoelectric properties of chalcopyrite type CuGaTe$_2$ and chalcostibite CuSbS$_2$|Vijay Kumar Gudelli,V. Kanchana,G. Vaitheeswaran,A. Svane,N. E. Christensen###
(63865, 63868)
 The variation of the thermopower as a functionof temperature and concentration suggests that CuSbS2 will be a goodthermoelectric material at low temperatures, similarly to the isostructuralCuBiS2 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 1.23, 'eV', 4],[227.0, 950, 'K', 3],[209.0, -3, ',', 3],[185.0, 1.4, ',', 3]

Si
###Mitigating the Effect of Nanoscale Porosity on Thermoelectric Power Factor of Si|S. Aria Hosseini,Giuseppe Romano,P. Alex Greaney###
(63903, 63903)
Mitigating the Effect of Nanoscale Porosity on Thermoelectric Power Factor of Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 15, '%', 8],[380.0, 60, '%', 8]

In
###Mitigating the Effect of Nanoscale Porosity on Thermoelectric Power Factor of Si|S. Aria Hosseini,Giuseppe Romano,P. Alex Greaney###
(63994, 63994)
 In this manuscript we derivestrategies to recoup electrical performance in nanoporous Si by fine tuning thecarrier concentration and through judicious design of the pore size and shapeso as to provide energy selective electron filtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 15, '%', 5],[289.0, 60, '%', 5]

Si
###Mitigating the Effect of Nanoscale Porosity on Thermoelectric Power Factor of Si|S. Aria Hosseini,Giuseppe Romano,P. Alex Greaney###
(64019, 64019)
 In this manuscript we derivestrategies to recoup electrical performance in nanoporous Si by fine tuning thecarrier concentration and through judicious design of the pore size and shapeso as to provide energy selective electron filtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 15, '%', 5],[264.0, 60, '%', 5]

In
###Mitigating the Effect of Nanoscale Porosity on Thermoelectric Power Factor of Si|S. Aria Hosseini,Giuseppe Romano,P. Alex Greaney###
(64072, 64072)
 In this study, weconsidered phosphorus doped silicon containing discrete pores that are eitherspheres, cylinders, cubes, or triangular prisms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 15, '%', 4],[211.0, 60, '%', 4]

Si
###Mitigating the Effect of Nanoscale Porosity on Thermoelectric Power Factor of Si|S. Aria Hosseini,Giuseppe Romano,P. Alex Greaney###
(64200, 64200)
 A semiclassical Boltzmann transport equation is used tomodel Si thermoelectric power factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 15, '%', 2],[83.0, 60, '%', 2]

Si
###Mitigating the Effect of Nanoscale Porosity on Thermoelectric Power Factor of Si|S. Aria Hosseini,Giuseppe Romano,P. Alex Greaney###
(64335, 64335)
 To obtain the best energy filtering effectat room temperature, nanoporous Si needs to be doped to higher carrierconcentration than is optimal for bulk Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 15, '%', 1],[52.0, 60, '%', 1]

Si
###Mitigating the Effect of Nanoscale Porosity on Thermoelectric Power Factor of Si|S. Aria Hosseini,Giuseppe Romano,P. Alex Greaney###
(64364, 64364)
 To obtain the best energy filtering effectat room temperature, nanoporous Si needs to be doped to higher carrierconcentration than is optimal for bulk Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 15, '%', 1],[81.0, 60, '%', 1]

Si
###Mitigating the Effect of Nanoscale Porosity on Thermoelectric Power Factor of Si|S. Aria Hosseini,Giuseppe Romano,P. Alex Greaney###
(64376, 64376)
 Finally, in n<missing VAR>-type Sithermoelectrics the electron filtering effect that can be generated withnanoscale porosity is significantly lower than the ideal filtering effect;nevertheless, the enhancement in the Seebeck coefficient that can be obtainedis large enough to offset the reduction in electrical conductivity caused byporosity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 15, '%', 2],[93.0, 60, '%', 2]

Ba
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64491, 64491)
Extraordinary thermoelectric performance of ABaX<missing VAR> compared to Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 300, 'K', 4],[350.0, 300, 'K', 6],[384.0, 350, 'K', 6],[417.0, 1.6, 'at', 7],[418.0, 350, 'K', 7]

Bi2Te3
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64498, 64501)
Extraordinary thermoelectric performance of ABaX<missing VAR> compared to Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 300, 'K', 4],[340.0, 300, 'K', 6],[374.0, 350, 'K', 6],[407.0, 1.6, 'at', 7],[408.0, 350, 'K', 7]

Bi2Te3
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64579, 64582)
 Thethermoelectric efficiency at low temperatures is impractically small, exceptonly a few bulk materials (Bi2Te3 and its alloys).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 300, 'K', 2],[259.0, 300, 'K', 4],[293.0, 350, 'K', 4],[326.0, 1.6, 'at', 5],[327.0, 350, 'K', 5]

I
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64595, 64595)
 Here, I predict twonew thermoelectric materials, LiBaSb and NaBaBi, with excellent transportproperties at low-medium temperature by using the first-principles method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 300, 'K', 1],[246.0, 300, 'K', 3],[280.0, 350, 'K', 3],[313.0, 1.6, 'at', 4],[314.0, 350, 'K', 4]

LiBaSb
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64609, 64611)
 Here, I predict twonew thermoelectric materials, LiBaSb and NaBaBi, with excellent transportproperties at low-medium temperature by using the first-principles method.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 300, 'K', 1],[230.0, 300, 'K', 3],[264.0, 350, 'K', 3],[297.0, 1.6, 'at', 4],[298.0, 350, 'K', 4]

NaBaBi
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64615, 64617)
 Here, I predict twonew thermoelectric materials, LiBaSb and NaBaBi, with excellent transportproperties at low-medium temperature by using the first-principles method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 300, 'K', 1],[224.0, 300, 'K', 3],[258.0, 350, 'K', 3],[291.0, 1.6, 'at', 4],[292.0, 350, 'K', 4]

NaBaBi
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64694, 64696)
 Therelatively low density of states near Fermi level, highly non-parabolic bands,and almost two times wider bandgap of NaBaBi lead to almost two times higheranisotropic power factor at 300K than that of Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 300, 'K', 0],[145.0, 300, 'K', 2],[179.0, 350, 'K', 2],[212.0, 1.6, 'at', 3],[213.0, 350, 'K', 3]

Bi2Te3
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64726, 64729)
 Therelatively low density of states near Fermi level, highly non-parabolic bands,and almost two times wider bandgap of NaBaBi lead to almost two times higheranisotropic power factor at 300K than that of Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 300, 'K', 0],[112.0, 300, 'K', 2],[146.0, 350, 'K', 2],[179.0, 1.6, 'at', 3],[180.0, 350, 'K', 3]

NaBaBi
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64760, 64762)
 On the other side, almostsimilar phonon density of states and anharmonicity of NaBaBi cause almostidentical lattice thermal conductivity (but it is much higher in LiBaSb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 300, 'K', 1],[79.0, 300, 'K', 1],[113.0, 350, 'K', 1],[146.0, 1.6, 'at', 2],[147.0, 350, 'K', 2]

Sb
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64792, 64792)
 On the other side, almostsimilar phonon density of states and anharmonicity of NaBaBi cause almostidentical lattice thermal conductivity (but it is much higher in LiBaSb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 300, 'K', 1],[49.0, 300, 'K', 1],[83.0, 350, 'K', 1],[116.0, 1.6, 'at', 2],[117.0, 350, 'K', 2]

NaBaBi
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64899, 64901)
 On the other hand, the isotropic maximumZT of NaBaBi is 1.2 and 1.6 at 350K for n<missing VAR> and p<missing VAR>-type carriers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 300, 'K', 3],[58.0, 300, 'K', 1],[24.0, 350, 'K', 1],[7.0, 1.6, 'at', 0],[8.0, 350, 'K', 0]

LiBaSb
###Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$|Enamul Haque###
(64931, 64933)
However, LiBaSb is less suitable for low-temperature TE applications, becauseof its relatively wider bandgap and high lattice thermal conductivity.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 300, 'K', 4],[90.0, 300, 'K', 2],[56.0, 350, 'K', 2],[23.0, 1.6, 'at', 1],[22.0, 350, 'K', 1]

W
###Non-Wiedemann-Franz Behavior of the Thermal Conductivity of Organic Semiconductors|Dorothea Scheunemann,Martijn Kemerink###
(65420, 65420)
 Although the electronic contribution dominates the thermalconductivity within the application-relevant parameter space, reaching ZT>1would require to minimize both the energetic disorder but also the latticethermal conductivity to values below kappatextlat<0.2W/m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Non-Wiedemann-Franz Behavior of the Thermal Conductivity of Organic Semiconductors|Dorothea Scheunemann,Martijn Kemerink###
(65423, 65423)
 Although the electronic contribution dominates the thermalconductivity within the application-relevant parameter space, reaching ZT>1would require to minimize both the energetic disorder but also the latticethermal conductivity to values below kappatextlat<0.2W/m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SF)
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65507, 65510)
 The thermopower enhancement by spin fluctuations (SF) has beenobserved before.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 80, '%', 3]

SF
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65551, 65552)
 However, the crucial evidence for enhancingthermoelectric-figure-of-merit (zT) by SF has not been reported until now.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 80, '%', 2]

CrTe
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65588, 65589)
 Herewe report evidence for such enhancement in the ferromagnetic CrTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 80, '%', 1]

SF
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65594, 65595)
 The SF leadsto nearly 80% zT enhancement in ferromagnetic CrTe near and below T<missing VAR>C335 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 80, '%', 0]

CrTe
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65616, 65617)
 The SF leadsto nearly 80% zT enhancement in ferromagnetic CrTe near and below T<missing VAR>C335 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 80, '%', 0]

C335
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65626, 65627)
 The SF leadsto nearly 80% zT enhancement in ferromagnetic CrTe near and below T<missing VAR>C335 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 80, '%', 0]

K
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65629, 65629)
 The SF leadsto nearly 80% zT enhancement in ferromagnetic CrTe near and below T<missing VAR>C335 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 80, '%', 0]

CrTe
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65639, 65640)
 Theferromagnetism in CrTe is originated from the collective electronic andlocalized magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 80, '%', 1]

SF
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65685, 65686)
 The field-dependent transport propertiesdemonstrate the profound impact of SF on the electrons and phonons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 80, '%', 2]

SF
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65701, 65702)
 The SFsimultaneously enhances the thermopower and reduces the thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 80, '%', 3]

SF
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65776, 65777)
Under an external magnetic field, the enhancement in thermopower is suppressed,and the thermal conductivity is enhanced, evidencing the existence of a strongSF near and below T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 80, '%', 4]

C
###Spin Fluctuations Yield zT Enhancement in Ferromagnets|Md Mobarak Hossain Polash,Daryoosh Vashaee###
(65786, 65786)
Under an external magnetic field, the enhancement in thermopower is suppressed,and the thermal conductivity is enhanced, evidencing the existence of a strongSF near and below T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 80, '%', 4]

NbP
###Doping as a tuning mechanism for magneto-thermoelectric effects to improve zT in polycrystalline NbP|Eleanor F. Scott,Katherine A. Schlaak,Poulomi Chakraborty,Chenguang Fu,Satya N. Guin,Safa Khodabakhsh,Ashley E. Paz y Puente,Claudia Felser,Brian Skinner,Sarah J. Watzman###
(65944, 65945)
Doping as a tuning mechanism for magneto-thermoelectric effects to improve zT in polycrystalline NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Doping as a tuning mechanism for magneto-thermoelectric effects to improve zT in polycrystalline NbP|Eleanor F. Scott,Katherine A. Schlaak,Poulomi Chakraborty,Chenguang Fu,Satya N. Guin,Safa Khodabakhsh,Ashley E. Paz y Puente,Claudia Felser,Brian Skinner,Sarah J. Watzman###
(66001, 66002)
Here, we present experimental results on polycrystalline NbP, demonstrating thesimultaneous existence of a large Nernst effect and a large magneto-Seebeckeffect, which is typically not observed in a single material at the sametemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Doping as a tuning mechanism for magneto-thermoelectric effects to improve zT in polycrystalline NbP|Eleanor F. Scott,Katherine A. Schlaak,Poulomi Chakraborty,Chenguang Fu,Satya N. Guin,Safa Khodabakhsh,Ashley E. Paz y Puente,Claudia Felser,Brian Skinner,Sarah J. Watzman###
(66085, 66086)
 We compare transport results from two polycrystalline samples ofNbP with previously published work, observing a shift in the temperature atwhich the maximum Nernst and magneto-Seebeck thermopowers occur, while stillmaintaining thermopowers of similar magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66454, 66454)
 We present a comprehensive study of thermoelectric transport properties of aquantum nanoelectromechanical system (NEMS) described by asingle-electron-transistor (SET) coupled to a quantum nanomechanical resonator(NR).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66457, 66457)
 We present a comprehensive study of thermoelectric transport properties of aquantum nanoelectromechanical system (NEMS) described by asingle-electron-transistor (SET) coupled to a quantum nanomechanical resonator(NR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66474, 66474)
 We present a comprehensive study of thermoelectric transport properties of aquantum nanoelectromechanical system (NEMS) described by asingle-electron-transistor (SET) coupled to a quantum nanomechanical resonator(NR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66493, 66493)
 We present a comprehensive study of thermoelectric transport properties of aquantum nanoelectromechanical system (NEMS) described by asingle-electron-transistor (SET) coupled to a quantum nanomechanical resonator(NR).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66508, 66508)
 The effects of a quantum NR<missing VAR> on the electronic current are investigatedwith special emphasis on how the SET-NR<missing VAR> coupling strength plays a role in sucha NEMS.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66536, 66536)
 The effects of a quantum NR<missing VAR> on the electronic current are investigatedwith special emphasis on how the SET-NR<missing VAR> coupling strength plays a role in sucha NEMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66540, 66540)
 The effects of a quantum NR<missing VAR> on the electronic current are investigatedwith special emphasis on how the SET-NR<missing VAR> coupling strength plays a role in sucha NEMS.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66560, 66560)
 The effects of a quantum NR<missing VAR> on the electronic current are investigatedwith special emphasis on how the SET-NR<missing VAR> coupling strength plays a role in sucha NEMS.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66563, 66563)
 The effects of a quantum NR<missing VAR> on the electronic current are investigatedwith special emphasis on how the SET-NR<missing VAR> coupling strength plays a role in sucha NEMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66574, 66574)
 We find that the SET-NR<missing VAR> coupling is not only able to suppress orenhance the thermoelectric current but can also switch its direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66578, 66578)
 We find that the SET-NR<missing VAR> coupling is not only able to suppress orenhance the thermoelectric current but can also switch its direction.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66628, 66628)
 Theeffect of the NR<missing VAR> on the thermoelectric coefficients of the SET are studied andwe find that even a small SET-NR<missing VAR> coupling could dramatically suppress thefigure of merits ZT .
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66643, 66643)
 Theeffect of the NR<missing VAR> on the thermoelectric coefficients of the SET are studied andwe find that even a small SET-NR<missing VAR> coupling could dramatically suppress thefigure of merits ZT .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66666, 66666)
 Theeffect of the NR<missing VAR> on the thermoelectric coefficients of the SET are studied andwe find that even a small SET-NR<missing VAR> coupling could dramatically suppress thefigure of merits ZT .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66670, 66670)
 Theeffect of the NR<missing VAR> on the thermoelectric coefficients of the SET are studied andwe find that even a small SET-NR<missing VAR> coupling could dramatically suppress thefigure of merits ZT .
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66717, 66717)
 Lastly, we investigate the backaction of electroniccurrent on the NR<missing VAR> and possible routes of heating or cooling the NR<missing VAR> arediscussed.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoelectric transport through a quantum nanoelectromechanical system and its backaction|Hangbo Zhou,Juzar Thingna,Jian-Sheng Wang,Baowen Li###
(66736, 66736)
 Lastly, we investigate the backaction of electroniccurrent on the NR<missing VAR> and possible routes of heating or cooling the NR<missing VAR> arediscussed.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr0.61Ba0.39Nb2O6
###Thermoelectric properties of Sr0.61Ba0.39Nb2O6-δ ceramics annealed in different oxygen-reduction conditions|Y. Li,J. Liu,C. L. Wang,W. B. Su,Y. H. Zhu,J. C. Li,L. M. Mei###
(67190, 67197)
Thermoelectric properties of Sr0.61Ba0.39Nb2O6- ceramics annealed in different oxygen-reduction conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06777777777777777,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043333333333333335,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 323, 'K', 1],[269.0, 1073, 'K', 6]

Sr0.61Ba0.39Nb2O6
###Thermoelectric properties of Sr0.61Ba0.39Nb2O6-δ ceramics annealed in different oxygen-reduction conditions|Y. Li,J. Liu,C. L. Wang,W. B. Su,Y. H. Zhu,J. C. Li,L. M. Mei###
(67223, 67230)
 The thermoelectric properties of Sr0.61Ba0.39Nb2O6 ceramics, reduced indifferent conditions, were investigated in the temperature region from 323 K to1073 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06777777777777777,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043333333333333335,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 323, 'K', 0],[236.0, 1073, 'K', 5]

K
###Thermoelectric properties of Sr0.61Ba0.39Nb2O6-δ ceramics annealed in different oxygen-reduction conditions|Y. Li,J. Liu,C. L. Wang,W. B. Su,Y. H. Zhu,J. C. Li,L. M. Mei###
(67265, 67265)
 The thermoelectric properties of Sr0.61Ba0.39Nb2O6 ceramics, reduced indifferent conditions, were investigated in the temperature region from 323 K to1073 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 323, 'K', 0],[201.0, 1073, 'K', 5]

SiGe
###Theoretical study of the thermoelectric properties of SiGe nanotubes|J. Wei,H. J. Liu,X. J. Tan,L. Cheng,J. Zhang,D. D. Fan,J. Shi,X. F. Tang###
(67509, 67510)
Theoretical study of the thermoelectric properties of SiGe nanotubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 6, ',', 2],[103.0, 10, ',', 2],[262.0, 4.9, 'at', 5],[276.0, 5.4, 'at', 5],[277.0, 400, 'K', 5],[286.0, 6, ',', 5]

SiGe
###Theoretical study of the thermoelectric properties of SiGe nanotubes|J. Wei,H. J. Liu,X. J. Tan,L. Cheng,J. Zhang,D. D. Fan,J. Shi,X. F. Tang###
(67527, 67528)
 The thermoelectric properties of two typical SiGe nanotubes are investigatedusing a combination of density functional theory, Boltzmann transport theory,and molecular dynamics simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 6, ',', 1],[85.0, 10, ',', 1],[244.0, 4.9, 'at', 4],[258.0, 5.4, 'at', 4],[259.0, 400, 'K', 4],[268.0, 6, ',', 4]

SiGe
###Theoretical study of the thermoelectric properties of SiGe nanotubes|J. Wei,H. J. Liu,X. J. Tan,L. Cheng,J. Zhang,D. D. Fan,J. Shi,X. F. Tang###
(67578, 67579)
 Unlike carbon nanotubes, these SiGenanotubes tend to have gear-like geometry, and both the (6, 6) and (10, 0)tubes are semiconducting with direct band gaps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 6, ',', 0],[34.0, 10, ',', 0],[193.0, 4.9, 'at', 3],[207.0, 5.4, 'at', 3],[208.0, 400, 'K', 3],[217.0, 6, ',', 3]

SiGe
###Theoretical study of the thermoelectric properties of SiGe nanotubes|J. Wei,H. J. Liu,X. J. Tan,L. Cheng,J. Zhang,D. D. Fan,J. Shi,X. F. Tang###
(67660, 67661)
 The calculated Seebeckcoefficients as well as the relaxation time of these SiGe nanotubes aresignificantly larger than those of bulk thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 6, ',', 1],[47.0, 10, ',', 1],[111.0, 4.9, 'at', 2],[125.0, 5.4, 'at', 2],[126.0, 400, 'K', 2],[135.0, 6, ',', 2]

SiGe
###Theoretical study of the thermoelectric properties of SiGe nanotubes|J. Wei,H. J. Liu,X. J. Tan,L. Cheng,J. Zhang,D. D. Fan,J. Shi,X. F. Tang###
(67716, 67717)
 Together withsmaller lattice thermal conductivity caused by phonon boundary and alloyscattering, these SiGe nanotubes can exhibit very good thermoelectricperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 6, ',', 2],[103.0, 10, ',', 2],[55.0, 4.9, 'at', 1],[69.0, 5.4, 'at', 1],[70.0, 400, 'K', 1],[79.0, 6, ',', 1]

Ba8Ga16Ge30
###Thermoelectric properties of two-dimensional slabs of Ba8Ga16Ge30 from first principles|Deepa Kasinathan,Vicente Pacheco-Espejel,Helge Rosner###
(67827, 67832)
Thermoelectric properties of two-dimensional slabs of Ba8Ga16Ge30 from first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2962962962962963,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14814814814814814,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba8Ga16Ge30
###Thermoelectric properties of two-dimensional slabs of Ba8Ga16Ge30 from first principles|Deepa Kasinathan,Vicente Pacheco-Espejel,Helge Rosner###
(67890, 67895)
 The clathrate Ba8Ga16Ge30 has the highest figure of merit (ZT 1) among other members in the family of type-I inorganic clathrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2962962962962963,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14814814814814814,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Thermoelectric properties of two-dimensional slabs of Ba8Ga16Ge30 from first principles|Deepa Kasinathan,Vicente Pacheco-Espejel,Helge Rosner###
(67934, 67934)
 The clathrate Ba8Ga16Ge30 has the highest figure of merit (ZT 1) among other members in the family of type-I inorganic clathrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S2
###Thermoelectric properties of two-dimensional slabs of Ba8Ga16Ge30 from first principles|Deepa Kasinathan,Vicente Pacheco-Espejel,Helge Rosner###
(67997, 67998)
Enhancement of the thermoelectric properties have been observed in multilayeredsuperlattices, quantum wires and in nanostructured materials, either due to theincrease in power-factor (S2sigma) or due to the reduction of latticethermal conductivity (kappa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba8Ga16Ge30
###Thermoelectric properties of two-dimensional slabs of Ba8Ga16Ge30 from first principles|Deepa Kasinathan,Vicente Pacheco-Espejel,Helge Rosner###
(68056, 68061)
 Here, we investigate the thermoelectricproperties of two-dimensional slabs with varying thickness of Ba8Ga16Ge30 usingsemi-classical Boltzmann transport theory with constant scatteringapproximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2962962962962963,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14814814814814814,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Non-linear impedance spectroscopy applied to thermoelectric measurements: beyond the ZT estimation|Etienne Thiébaut,François Pesty,Christophe Goupil,Guillaume Guegan,Philippe Lecoeur###
(68371, 68371)
In order to extend impedance spectroscopy, we have investigated the measurementof the non-linear harmonic response of a Peltier device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UN2
###High figure-of-merit in the heavy-fermion UN2 system for radioisotope thermoelectric applications|Z. Z. Zhou,D. D. Fan,H. J. Liu,J. Liu###
(68544, 68546)
High figure-of-merit in the heavy-fermion UN2 system for radioisotope thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[108.0, 13.8, 'mW', 2],[126.0, 2.2, 'can', 2],[148.0, 700, 'K', 2]

K2
###High figure-of-merit in the heavy-fermion UN2 system for radioisotope thermoelectric applications|Z. Z. Zhou,D. D. Fan,H. J. Liu,J. Liu###
(68657, 68658)
Using high-level first-principles approach combined with accurate solution ofBoltzmann transport equation, we demonstrate that a giant n<missing VAR>-type power factorof 13.8 mW/m<missing VAR>K2 and a peak ZT value of 2.2 can be realized in the heavy-fermionUN2 compound at 700 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 13.8, 'mW', 0],[14.0, 2.2, 'can', 0],[36.0, 700, 'K', 0]

UN2
###High figure-of-merit in the heavy-fermion UN2 system for radioisotope thermoelectric applications|Z. Z. Zhou,D. D. Fan,H. J. Liu,J. Liu###
(68687, 68689)
Using high-level first-principles approach combined with accurate solution ofBoltzmann transport equation, we demonstrate that a giant n<missing VAR>-type power factorof 13.8 mW/m<missing VAR>K2 and a peak ZT value of 2.2 can be realized in the heavy-fermionUN2 compound at 700 K.
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[33.0, 13.8, 'mW', 0],[15.0, 2.2, 'can', 0],[5.0, 700, 'K', 0]

U
###High figure-of-merit in the heavy-fermion UN2 system for radioisotope thermoelectric applications|Z. Z. Zhou,D. D. Fan,H. J. Liu,J. Liu###
(68772, 68772)
 Such promising thermoelectric performance arises fromthe large degeneracy (Nv14) of heavy conduction band coupled with weakelectron-phonon interactions, which is in principle governed by the strongCoulomb correlation among the partially filled U-5f<missing VAR> electrons in theface-centered cubic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 13.8, 'mW', 1],[100.0, 2.2, 'can', 1],[78.0, 700, 'K', 1]

UN2
###High figure-of-merit in the heavy-fermion UN2 system for radioisotope thermoelectric applications|Z. Z. Zhou,D. D. Fan,H. J. Liu,J. Liu###
(68811, 68813)
 Collectively, our theoretical work suggests thatthe energetic UN2 is an excellent alternative to efficient radioisotope powerconversion, which also uncovers an underexplored area for thermoelectricresearch.
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[157.0, 13.8, 'mW', 2],[139.0, 2.2, 'can', 2],[117.0, 700, 'K', 2]

In
###Performance analysis of an interacting quantum dot thermoelectric system|Bhaskaran Muralidharan,Milena Grifoni###
(69060, 69060)
In this paper, we point out three fundamental results affecting thethermoelectric performance due to the inclusion of Coulomb interactions a) Thereversible operating point carries zero efficiency, b) operation at finitepower output is possible even at peak efficiencies approaching the Carnotvalue, and c) the evaluated trends of the the maximum efficiency deviateconsiderably from the conventional itfigure of merit zT based result.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Suppression of vacancies boosts thermoelectric performance in type-I clathrates|Xinlin Yan,Matthias Ikeda,Long Zhang,Ernst Bauer,Peter Rogl,Gerald Giester,Andrey Prokofiev,Silke Paschen###
(69258, 69258)
Suppression of vacancies boosts thermoelectric performance in type-I clathrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 46, ',', 2],[120.0, 6, 'c', 3],[220.0, 900, 'K', 6]

I
###Suppression of vacancies boosts thermoelectric performance in type-I clathrates|Xinlin Yan,Matthias Ikeda,Long Zhang,Ernst Bauer,Peter Rogl,Gerald Giester,Andrey Prokofiev,Silke Paschen###
(69267, 69267)
 Intermetallic type-I clathrates continue to attract attention as promisingthermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 46, ',', 1],[111.0, 6, 'c', 2],[211.0, 900, 'K', 5]

Ba8
###Suppression of vacancies boosts thermoelectric performance in type-I clathrates|Xinlin Yan,Matthias Ikeda,Long Zhang,Ernst Bauer,Peter Rogl,Gerald Giester,Andrey Prokofiev,Silke Paschen###
(69310, 69311)
 Here we present structural and thermoelectricproperties of single crystalline Ba8(Cu,Ga,Ge,v)46, where v<missing VAR> denotes a vacancy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 46, ',', 0],[67.0, 6, 'c', 1],[167.0, 900, 'K', 4]

Cu
###Suppression of vacancies boosts thermoelectric performance in type-I clathrates|Xinlin Yan,Matthias Ikeda,Long Zhang,Ernst Bauer,Peter Rogl,Gerald Giester,Andrey Prokofiev,Silke Paschen###
(69313, 69313)
 Here we present structural and thermoelectricproperties of single crystalline Ba8(Cu,Ga,Ge,v)46, where v<missing VAR> denotes a vacancy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 46, ',', 0],[65.0, 6, 'c', 1],[165.0, 900, 'K', 4]

Ga
###Suppression of vacancies boosts thermoelectric performance in type-I clathrates|Xinlin Yan,Matthias Ikeda,Long Zhang,Ernst Bauer,Peter Rogl,Gerald Giester,Andrey Prokofiev,Silke Paschen###
(69315, 69315)
 Here we present structural and thermoelectricproperties of single crystalline Ba8(Cu,Ga,Ge,v)46, where v<missing VAR> denotes a vacancy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 46, ',', 0],[63.0, 6, 'c', 1],[163.0, 900, 'K', 4]

Ge
###Suppression of vacancies boosts thermoelectric performance in type-I clathrates|Xinlin Yan,Matthias Ikeda,Long Zhang,Ernst Bauer,Peter Rogl,Gerald Giester,Andrey Prokofiev,Silke Paschen###
(69317, 69317)
 Here we present structural and thermoelectricproperties of single crystalline Ba8(Cu,Ga,Ge,v)46, where v<missing VAR> denotes a vacancy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 46, ',', 0],[61.0, 6, 'c', 1],[161.0, 900, 'K', 4]

Ga
###Suppression of vacancies boosts thermoelectric performance in type-I clathrates|Xinlin Yan,Matthias Ikeda,Long Zhang,Ernst Bauer,Peter Rogl,Gerald Giester,Andrey Prokofiev,Silke Paschen###
(69354, 69354)
By single crystal X<missing VAR>-ray diffraction on crystals without Ga we find clearevidence for the presence of vacancies at the 6c site in the structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 46, ',', 1],[24.0, 6, 'c', 0],[124.0, 900, 'K', 3]

Ga
###Suppression of vacancies boosts thermoelectric performance in type-I clathrates|Xinlin Yan,Matthias Ikeda,Long Zhang,Ernst Bauer,Peter Rogl,Gerald Giester,Andrey Prokofiev,Silke Paschen###
(69394, 69394)
 Withincreasing Ga content, vacancies are successively filled.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 46, ',', 2],[16.0, 6, 'c', 1],[84.0, 900, 'K', 2]

Ga
###Suppression of vacancies boosts thermoelectric performance in type-I clathrates|Xinlin Yan,Matthias Ikeda,Long Zhang,Ernst Bauer,Peter Rogl,Gerald Giester,Andrey Prokofiev,Silke Paschen###
(69436, 69436)
 This increases thecharge carrier mobility strongly, even within a small range of Ga substitution,leading to reduced electrical resistivity and enhanced thermoelectricperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 46, ',', 3],[58.0, 6, 'c', 2],[42.0, 900, 'K', 1]

Ba8Cu4.6Ga1.0Ge40.4
###Suppression of vacancies boosts thermoelectric performance in type-I clathrates|Xinlin Yan,Matthias Ikeda,Long Zhang,Ernst Bauer,Peter Rogl,Gerald Giester,Andrey Prokofiev,Silke Paschen###
(69499, 69506)
 The largest figure of merit ZT 0.9 at 900 K is found for a singlecrystal of approximate composition Ba8Cu4.6Ga1.0Ge40.4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08518518518518518,0,0.018518518518518517,0.7481481481481481,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14814814814814814,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 46, ',', 4],[121.0, 6, 'c', 3],[21.0, 900, 'K', 0]

K
###Quantum thermoelectrics based on 2-D Semi-Dirac materials|Alestin Mawrie,Bhaskaran Muralidharan###
(69626, 69626)
 We show that a gap parameter can fully describe the merging of Dirac cones insemi-Dirac materials from K- and Kprime-points into the common M<missing VAR>-pointin the Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 2, 'D', 4]

K
###Quantum thermoelectrics based on 2-D Semi-Dirac materials|Alestin Mawrie,Bhaskaran Muralidharan###
(69631, 69631)
 We show that a gap parameter can fully describe the merging of Dirac cones insemi-Dirac materials from K- and Kprime-points into the common M<missing VAR>-pointin the Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 2, 'D', 4]

In
###High Thermoelectric Performance in Two-Dimensional Tellurium: An Ab Initio Study|Zhibin Gao,Gang Liu,Jie Ren###
(69898, 69898)
 In 2016, bulk tellurium was experimentally observed as a remarkablethermoelectric material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2016, ',', 0],[72.0, 2, 'D', 1],[116.0, 2, 'D', 3],[253.0, 0.83, 'is', 7]

MoS2
###High Thermoelectric Performance in Two-Dimensional Tellurium: An Ab Initio Study|Zhibin Gao,Gang Liu,Jie Ren###
(69972, 69974)
 Recently, two-dimensional (2D) tellurium, calledtellurene, has been synthesized and has exhibited unexpected electronicproperties compared with the 2D MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2016, ',', 1],[2.0, 2, 'D', 0],[40.0, 2, 'D', 2],[177.0, 0.83, 'is', 6]

Te
###High Thermoelectric Performance in Two-Dimensional Tellurium: An Ab Initio Study|Zhibin Gao,Gang Liu,Jie Ren###
(70027, 70027)
 One (beta-Te) has been confirmed with an ultralow latticethermal conductivity (kappaL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2016, ',', 4],[57.0, 2, 'D', 3],[13.0, 2, 'D', 1],[124.0, 0.83, 'is', 3]

Te
###High Thermoelectric Performance in Two-Dimensional Tellurium: An Ab Initio Study|Zhibin Gao,Gang Liu,Jie Ren###
(70086, 70086)
 However, the study of the transportproperties of the other more stable phase, alpha-Te, is still lacking.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 2016, ',', 5],[116.0, 2, 'D', 4],[72.0, 2, 'D', 2],[65.0, 0.83, 'is', 2]

Te
###High Thermoelectric Performance in Two-Dimensional Tellurium: An Ab Initio Study|Zhibin Gao,Gang Liu,Jie Ren###
(70120, 70120)
 Here,we report the thermoelectric performance and phonon properties of alpha-Teusing Boltzmann transport theory and first principle calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 2016, ',', 6],[150.0, 2, 'D', 5],[106.0, 2, 'D', 3],[31.0, 0.83, 'is', 1]

Te
###High Thermoelectric Performance in Two-Dimensional Tellurium: An Ab Initio Study|Zhibin Gao,Gang Liu,Jie Ren###
(70175, 70175)
 A maximum ZTvalue of 0.83 is achieved under reasonable hole concentration, suggesting thatthe monolayer alpha-Te is a potential competitor in the thermoelectricfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 2016, ',', 7],[205.0, 2, 'D', 6],[161.0, 2, 'D', 4],[24.0, 0.83, 'is', 0]

At
###Thermoelectricity modeling with cold dipole atoms in Aubry phase of optical lattice|Oleg V. Zhirov,José Lages,Dima L. Shepelyansky###
(70279, 70279)
 At small potential amplitudes the chain slides freely thatcorresponds to the Kolmogorov-Arnold-Moser phase of integrable curves of asymplectic map.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 25, 'being', 2]

LaP
###First-Principles Study of Strain Effect on Thermoelectric Properties of LaP and LaAs|Chia-Min Lin,Wei-Chih Chen,Cheng-Chien Chen###
(70508, 70509)
First-Principles Study of Strain Effect on Thermoelectric Properties of LaP and LaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2, '%', 5],[226.0, -3, ',', 5],[236.0, 1200, 'K', 5],[257.0, 2, ',', 5],[268.0, 90, '%', 5]

LaAs
###First-Principles Study of Strain Effect on Thermoelectric Properties of LaP and LaAs|Chia-Min Lin,Wei-Chih Chen,Cheng-Chien Chen###
(70513, 70514)
First-Principles Study of Strain Effect on Thermoelectric Properties of LaP and LaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 2, '%', 5],[221.0, -3, ',', 5],[231.0, 1200, 'K', 5],[252.0, 2, ',', 5],[263.0, 90, '%', 5]

La
###First-Principles Study of Strain Effect on Thermoelectric Properties of LaP and LaAs|Chia-Min Lin,Wei-Chih Chen,Cheng-Chien Chen###
(70575, 70575)
 Here,we study rock-salt structured lanthanum monopnictides LaX<missing VAR> (X<missing VAR>  P, As) bydensity functional theory (DFT) simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, '%', 3],[160.0, -3, ',', 3],[170.0, 1200, 'K', 3],[191.0, 2, ',', 3],[202.0, 90, '%', 3]

P
###First-Principles Study of Strain Effect on Thermoelectric Properties of LaP and LaAs|Chia-Min Lin,Wei-Chih Chen,Cheng-Chien Chen###
(70582, 70582)
 Here,we study rock-salt structured lanthanum monopnictides LaX<missing VAR> (X<missing VAR>  P, As) bydensity functional theory (DFT) simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, '%', 3],[153.0, -3, ',', 3],[163.0, 1200, 'K', 3],[184.0, 2, ',', 3],[195.0, 90, '%', 3]

As
###First-Principles Study of Strain Effect on Thermoelectric Properties of LaP and LaAs|Chia-Min Lin,Wei-Chih Chen,Cheng-Chien Chen###
(70585, 70585)
 Here,we study rock-salt structured lanthanum monopnictides LaX<missing VAR> (X<missing VAR>  P, As) bydensity functional theory (DFT) simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 2, '%', 3],[150.0, -3, ',', 3],[160.0, 1200, 'K', 3],[181.0, 2, ',', 3],[192.0, 90, '%', 3]

LaP
###First-Principles Study of Strain Effect on Thermoelectric Properties of LaP and LaAs|Chia-Min Lin,Wei-Chih Chen,Cheng-Chien Chen###
(70739, 70740)
 Under theoptimal condition of 2% tensile strain and carrier concentrationn<missing VAR>3times1020textrmcm-3, LaP at temperature 1200 K can achieve afigure of merit ZT value >2, which is enhanced by 90% compared to theunstrained value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2, '%', 0],[4.0, -3, ',', 0],[5.0, 1200, 'K', 0],[26.0, 2, ',', 0],[37.0, 90, '%', 0]

Ni
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(70854, 70854)
Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 0.46, ',', 5],[269.0, 0.35, ',', 5],[274.0, 0.29, ',', 5],[280.0, 1200, 'K', 5]

Ni
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(70884, 70884)
 We have investigated the electronic and thermoelectric properties ofhalf-Heusler alloys NiTZ (T<missing VAR>  Sc, and Ti; Z<missing VAR>  P, As, Sn, and Sb) having 18valence electron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 0.46, ',', 4],[239.0, 0.35, ',', 4],[244.0, 0.29, ',', 4],[250.0, 1200, 'K', 4]

Sc
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(70892, 70892)
 We have investigated the electronic and thermoelectric properties ofhalf-Heusler alloys NiTZ (T<missing VAR>  Sc, and Ti; Z<missing VAR>  P, As, Sn, and Sb) having 18valence electron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 0.46, ',', 4],[231.0, 0.35, ',', 4],[236.0, 0.29, ',', 4],[242.0, 1200, 'K', 4]

Ti
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(70897, 70897)
 We have investigated the electronic and thermoelectric properties ofhalf-Heusler alloys NiTZ (T<missing VAR>  Sc, and Ti; Z<missing VAR>  P, As, Sn, and Sb) having 18valence electron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 0.46, ',', 4],[226.0, 0.35, ',', 4],[231.0, 0.29, ',', 4],[237.0, 1200, 'K', 4]

P
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(70903, 70903)
 We have investigated the electronic and thermoelectric properties ofhalf-Heusler alloys NiTZ (T<missing VAR>  Sc, and Ti; Z<missing VAR>  P, As, Sn, and Sb) having 18valence electron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 0.46, ',', 4],[220.0, 0.35, ',', 4],[225.0, 0.29, ',', 4],[231.0, 1200, 'K', 4]

As
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(70906, 70906)
 We have investigated the electronic and thermoelectric properties ofhalf-Heusler alloys NiTZ (T<missing VAR>  Sc, and Ti; Z<missing VAR>  P, As, Sn, and Sb) having 18valence electron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 0.46, ',', 4],[217.0, 0.35, ',', 4],[222.0, 0.29, ',', 4],[228.0, 1200, 'K', 4]

Sn
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(70909, 70909)
 We have investigated the electronic and thermoelectric properties ofhalf-Heusler alloys NiTZ (T<missing VAR>  Sc, and Ti; Z<missing VAR>  P, As, Sn, and Sb) having 18valence electron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 0.46, ',', 4],[214.0, 0.35, ',', 4],[219.0, 0.29, ',', 4],[225.0, 1200, 'K', 4]

Sb
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(70914, 70914)
 We have investigated the electronic and thermoelectric properties ofhalf-Heusler alloys NiTZ (T<missing VAR>  Sc, and Ti; Z<missing VAR>  P, As, Sn, and Sb) having 18valence electron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 0.46, ',', 4],[209.0, 0.35, ',', 4],[214.0, 0.29, ',', 4],[220.0, 1200, 'K', 4]

NiTiSn
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(70970, 70972)
 Calculations are performed by means of density functionaltheory and Boltzmann transport equation with constant relaxation timeapproximation, validated by NiTiSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.46, ',', 3],[151.0, 0.35, ',', 3],[156.0, 0.29, ',', 3],[162.0, 1200, 'K', 3]

NiScP
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(71046, 71048)
 The estimatedpower factor for NiScP, NiScAs, and NiScSb reveals that their thermoelectricperformance can be enhanced by appropriate doping rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.46, ',', 1],[75.0, 0.35, ',', 1],[80.0, 0.29, ',', 1],[86.0, 1200, 'K', 1]

NiScAs
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(71051, 71053)
 The estimatedpower factor for NiScP, NiScAs, and NiScSb reveals that their thermoelectricperformance can be enhanced by appropriate doping rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.46, ',', 1],[70.0, 0.35, ',', 1],[75.0, 0.29, ',', 1],[81.0, 1200, 'K', 1]

NiScSb
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(71058, 71060)
 The estimatedpower factor for NiScP, NiScAs, and NiScSb reveals that their thermoelectricperformance can be enhanced by appropriate doping rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0.46, ',', 1],[63.0, 0.35, ',', 1],[68.0, 0.29, ',', 1],[74.0, 1200, 'K', 1]

NiScP
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(71102, 71104)
 The value of ZT foundfor NiScP, NiScAs, and NiScSb are 0.46, 0.35, and 0.29, respectively at 1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.46, ',', 0],[19.0, 0.35, ',', 0],[24.0, 0.29, ',', 0],[30.0, 1200, 'K', 0]

NiScAs
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(71107, 71109)
 The value of ZT foundfor NiScP, NiScAs, and NiScSb are 0.46, 0.35, and 0.29, respectively at 1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.46, ',', 0],[14.0, 0.35, ',', 0],[19.0, 0.29, ',', 0],[25.0, 1200, 'K', 0]

NiScSb
###Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ|Dhurba R. Jaishi,Nileema Sharma,Bishnu Karki,Bishnu P. Belbase,Rajendra P. Adhikari,Madhav Prasad Ghimire###
(71114, 71116)
 The value of ZT foundfor NiScP, NiScAs, and NiScSb are 0.46, 0.35, and 0.29, respectively at 1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.46, ',', 0],[7.0, 0.35, ',', 0],[12.0, 0.29, ',', 0],[18.0, 1200, 'K', 0]

VTiRh
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71168, 71170)
First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ<missing VAR> (Z<missing VAR> Al, Ga, In) Quaternary Heusler Alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 100, '%', 3],[317.0, 0.96, ',', 5],[319.0, 0.88, 'and', 5],[321.0, 0.64, ',', 5]

Al
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71176, 71176)
First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ<missing VAR> (Z<missing VAR> Al, Ga, In) Quaternary Heusler Alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 100, '%', 3],[311.0, 0.96, ',', 5],[313.0, 0.88, 'and', 5],[315.0, 0.64, ',', 5]

Ga
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71179, 71179)
First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ<missing VAR> (Z<missing VAR> Al, Ga, In) Quaternary Heusler Alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 100, '%', 3],[308.0, 0.96, ',', 5],[310.0, 0.88, 'and', 5],[312.0, 0.64, ',', 5]

In
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71182, 71182)
First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ<missing VAR> (Z<missing VAR> Al, Ga, In) Quaternary Heusler Alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 100, '%', 3],[305.0, 0.96, ',', 5],[307.0, 0.88, 'and', 5],[309.0, 0.64, ',', 5]

VTiRh
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71243, 71245)
 Calculations using density functional theory (DFT) were performed toinvestigate the structural, dynamical, mechanical, electronic, magnetic, andthermoelectric properties of VTiRhZ<missing VAR> (Z<missing VAR>  Al, Ga, In) alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 100, '%', 2],[242.0, 0.96, ',', 4],[244.0, 0.88, 'and', 4],[246.0, 0.64, ',', 4]

Al
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71252, 71252)
 Calculations using density functional theory (DFT) were performed toinvestigate the structural, dynamical, mechanical, electronic, magnetic, andthermoelectric properties of VTiRhZ<missing VAR> (Z<missing VAR>  Al, Ga, In) alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 100, '%', 2],[235.0, 0.96, ',', 4],[237.0, 0.88, 'and', 4],[239.0, 0.64, ',', 4]

Ga
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71255, 71255)
 Calculations using density functional theory (DFT) were performed toinvestigate the structural, dynamical, mechanical, electronic, magnetic, andthermoelectric properties of VTiRhZ<missing VAR> (Z<missing VAR>  Al, Ga, In) alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 100, '%', 2],[232.0, 0.96, ',', 4],[234.0, 0.88, 'and', 4],[236.0, 0.64, ',', 4]

In
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71258, 71258)
 Calculations using density functional theory (DFT) were performed toinvestigate the structural, dynamical, mechanical, electronic, magnetic, andthermoelectric properties of VTiRhZ<missing VAR> (Z<missing VAR>  Al, Ga, In) alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 100, '%', 2],[229.0, 0.96, ',', 4],[231.0, 0.88, 'and', 4],[233.0, 0.64, ',', 4]

I
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71291, 71291)
 The most stablestructure of these alloys was found to be the type-I configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 100, '%', 1],[196.0, 0.96, ',', 3],[198.0, 0.88, 'and', 3],[200.0, 0.64, ',', 3]

PB
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71303, 71304)
 UsingGGA-PBE<missing VAR> functional, VTiRhGa, and VTiRhIn alloys are predicted as half-metallicferromagnets with a 100% spin-polarization and a total magnetic moment of3muB, which is promising for spintronic applications.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 100, '%', 0],[183.0, 0.96, ',', 2],[185.0, 0.88, 'and', 2],[187.0, 0.64, ',', 2]

VTiRhGa
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71310, 71313)
 UsingGGA-PBE<missing VAR> functional, VTiRhGa, and VTiRhIn alloys are predicted as half-metallicferromagnets with a 100% spin-polarization and a total magnetic moment of3muB, which is promising for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 100, '%', 0],[174.0, 0.96, ',', 2],[176.0, 0.88, 'and', 2],[178.0, 0.64, ',', 2]

VTiRhIn
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71318, 71321)
 UsingGGA-PBE<missing VAR> functional, VTiRhGa, and VTiRhIn alloys are predicted as half-metallicferromagnets with a 100% spin-polarization and a total magnetic moment of3muB, which is promising for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 100, '%', 0],[166.0, 0.96, ',', 2],[168.0, 0.88, 'and', 2],[170.0, 0.64, ',', 2]

B
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71364, 71364)
 UsingGGA-PBE<missing VAR> functional, VTiRhGa, and VTiRhIn alloys are predicted as half-metallicferromagnets with a 100% spin-polarization and a total magnetic moment of3muB, which is promising for spintronic applications.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 100, '%', 0],[123.0, 0.96, ',', 2],[125.0, 0.88, 'and', 2],[127.0, 0.64, ',', 2]

VTiRh
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71397, 71399)
 The thermoelectricproperties and lattice thermal conductivity of VTiRhZ<missing VAR> alloys were obtainedusing the Boltzmann transport theory within the constant relaxation time andSlack equation, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 100, '%', 1],[88.0, 0.96, ',', 1],[90.0, 0.88, 'and', 1],[92.0, 0.64, ',', 1]

VTiRhAl
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71457, 71460)
 The figure-of-merit (ZT) values of VTiRhAl,VTiRhGa, and VTiRhIn alloys were found to be 0.96, 0.88 and 0.64, respectively,which are promising for future thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 100, '%', 2],[27.0, 0.96, ',', 0],[29.0, 0.88, 'and', 0],[31.0, 0.64, ',', 0]

VTiRhGa
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71464, 71467)
 The figure-of-merit (ZT) values of VTiRhAl,VTiRhGa, and VTiRhIn alloys were found to be 0.96, 0.88 and 0.64, respectively,which are promising for future thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 100, '%', 2],[20.0, 0.96, ',', 0],[22.0, 0.88, 'and', 0],[24.0, 0.64, ',', 0]

VTiRhIn
###First-principles investigations of the electronic, magnetic and thermoelectric properties of VTiRhZ (Z= Al, Ga, In) Quaternary Heusler Alloys|Hind Alqurashi,Raad Haleoot,Bothina Hamad###
(71472, 71475)
 The figure-of-merit (ZT) values of VTiRhAl,VTiRhGa, and VTiRhIn alloys were found to be 0.96, 0.88 and 0.64, respectively,which are promising for future thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 100, '%', 2],[12.0, 0.96, ',', 0],[14.0, 0.88, 'and', 0],[16.0, 0.64, ',', 0]

(HH)
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71548, 71551)
 Half Heusler (HH) thermoelectric alloys provide a wide platform to choosematerials with non-toxic and earth abundant elements.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 7, ',', 3],[523.0, 0.45, 'for', 9]

HH
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71645, 71646)
 This article presents anab-initio theoretical evaluation of electrical and thermal transport propertiesof three Bismuth-based most promising thermoelectric alloys, selected out of 54stable HH compounds.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 7, ',', 2],[428.0, 0.45, 'for', 8]

HfRhBi
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71723, 71725)
The calculated band structure of the three compounds, namely HfRhBi, ZrIrBi andZrRhBi, served as a hint for their promising thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 7, ',', 1],[349.0, 0.45, 'for', 5]

ZrIrBi
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71728, 71730)
The calculated band structure of the three compounds, namely HfRhBi, ZrIrBi andZrRhBi, served as a hint for their promising thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 7, ',', 1],[344.0, 0.45, 'for', 5]

ZrRhBi
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71735, 71737)
The calculated band structure of the three compounds, namely HfRhBi, ZrIrBi andZrRhBi, served as a hint for their promising thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 7, ',', 1],[337.0, 0.45, 'for', 5]

ZrNiSn
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71809, 71811)
 To gainconfidence on the theoretical predictions of these unreported systems, we firstchecked our calculated results for a well studied similar compound, ZrNiSn, andshowed reasonable agreement with the measured ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 7, ',', 2],[263.0, 0.45, 'for', 4]

HfRhBi
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71832, 71834)
 HfRhBi and ZrIrBi turn outto be narrow band gap while ZrRhBi is a moderate band gap semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 7, ',', 3],[240.0, 0.45, 'for', 3]

ZrIrBi
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71838, 71840)
 HfRhBi and ZrIrBi turn outto be narrow band gap while ZrRhBi is a moderate band gap semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 7, ',', 3],[234.0, 0.45, 'for', 3]

ZrRhBi
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71859, 71861)
 HfRhBi and ZrIrBi turn outto be narrow band gap while ZrRhBi is a moderate band gap semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 7, ',', 3],[213.0, 0.45, 'for', 3]

(S)
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71906, 71908)
 Adetailed study of the carrier concentration and temperature dependance of theSeebeck coefficient (S), Power factor (S2 sigma), lattice (kappaL) andelectronic (kappae) thermal conductivity and hence the figure of merit (ZT)is carried out.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 7, ',', 4],[166.0, 0.45, 'for', 2]

S2
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71916, 71917)
 Adetailed study of the carrier concentration and temperature dependance of theSeebeck coefficient (S), Power factor (S2 sigma), lattice (kappaL) andelectronic (kappae) thermal conductivity and hence the figure of merit (ZT)is carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 7, ',', 4],[157.0, 0.45, 'for', 2]

In
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(71969, 71969)
 In contrast to most promising known thermoelectric materials,we found high power factor for these materials (highest S2 sigmasim17.36m<missing VAR>Wm-1K-2 for p<missing VAR>-type ZrIrBi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 7, ',', 5],[105.0, 0.45, 'for', 1]

S2
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(72006, 72007)
 In contrast to most promising known thermoelectric materials,we found high power factor for these materials (highest S2 sigmasim17.36m<missing VAR>Wm-1K-2 for p<missing VAR>-type ZrIrBi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 7, ',', 5],[67.0, 0.45, 'for', 1]

K
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(72018, 72018)
 In contrast to most promising known thermoelectric materials,we found high power factor for these materials (highest S2 sigmasim17.36m<missing VAR>Wm-1K-2 for p<missing VAR>-type ZrIrBi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 7, ',', 5],[56.0, 0.45, 'for', 1]

Bi
###Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit|Vikram,Jiban Kangsabanik,Enamullah,Aftab Alam###
(72030, 72030)
 In contrast to most promising known thermoelectric materials,we found high power factor for these materials (highest S2 sigmasim17.36m<missing VAR>Wm-1K-2 for p<missing VAR>-type ZrIrBi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, 7, ',', 5],[44.0, 0.45, 'for', 1]

SO
###Thermoelectric Properties of Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport|Neophytos Neophytou,Hans Kosina###
(72179, 72180)
Thermoelectric Properties of Scaled Silicon Nanowires Using the sp3d5s-SO Atomistic Tight-Binding Model and Boltzmann Transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 3, 'nm', 5],[261.0, 12, 'nm', 5],[355.0, 7, 'nm', 7]

As
###Thermoelectric Properties of Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport|Neophytos Neophytou,Hans Kosina###
(72197, 72197)
 As a result of suppressed phonon conduction, large improvements of thethermoelectric figure of merit, ZT, have been recently reported fornanostructures compared to the raw materials ZT values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 3, 'nm', 4],[244.0, 12, 'nm', 4],[338.0, 7, 'nm', 6]

In
###Thermoelectric Properties of Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport|Neophytos Neophytou,Hans Kosina###
(72308, 72308)
 In this work the atomisticsp3d5s-spin-orbit-coupled tight-binding model is used to calculate theelectronic structure of silicon nanowires (NWs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 3, 'nm', 2],[133.0, 12, 'nm', 2],[227.0, 7, 'nm', 4]

N
###Thermoelectric Properties of Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport|Neophytos Neophytou,Hans Kosina###
(72359, 72359)
 In this work the atomisticsp3d5s-spin-orbit-coupled tight-binding model is used to calculate theelectronic structure of silicon nanowires (NWs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 3, 'nm', 2],[82.0, 12, 'nm', 2],[176.0, 7, 'nm', 4]

CeCu6
###Thermoelectric Properties of Nanocomposite Heavy Fermion CeCu6|Mani Pokharel,Tulashi Dahal,Zhifeng Ren,Cyril Opeil###
(72620, 72622)
Thermoelectric Properties of Nanocomposite Heavy Fermion CeCu6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 0.024, 'at', 8],[291.0, 60, 'K', 8],[305.0, 800, 'C', 8]

CeCu6
###Thermoelectric Properties of Nanocomposite Heavy Fermion CeCu6|Mani Pokharel,Tulashi Dahal,Zhifeng Ren,Cyril Opeil###
(72635, 72637)
 Samples of heavy fermion compound CeCu6 were prepared by hot-press technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 0.024, 'at', 7],[276.0, 60, 'K', 7],[290.0, 800, 'C', 7]

K
###Thermoelectric Properties of Nanocomposite Heavy Fermion CeCu6|Mani Pokharel,Tulashi Dahal,Zhifeng Ren,Cyril Opeil###
(72662, 72662)
Temperature-dependent (5-300 K) thermoelectric transport properties of thesamples were measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 0.024, 'at', 6],[251.0, 60, 'K', 6],[265.0, 800, 'C', 6]

C
###Thermoelectric Properties of Nanocomposite Heavy Fermion CeCu6|Mani Pokharel,Tulashi Dahal,Zhifeng Ren,Cyril Opeil###
(72744, 72744)
 Our measurements of thermal conductivityshow that the lowest hot pressing temperature (450 C) produces the lowestthermal conductivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 0.024, 'at', 4],[169.0, 60, 'K', 4],[183.0, 800, 'C', 4]

As
###Thermoelectric Properties of Nanocomposite Heavy Fermion CeCu6|Mani Pokharel,Tulashi Dahal,Zhifeng Ren,Cyril Opeil###
(72793, 72793)
 Asthe hot-pressing temperature decreases, electronic contribution to the totalthermal conductivity decreased more rapidly than the lattice contribution did.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 0.024, 'at', 2],[120.0, 60, 'K', 2],[134.0, 800, 'C', 2]

As
###Thermoelectric Properties of Nanocomposite Heavy Fermion CeCu6|Mani Pokharel,Tulashi Dahal,Zhifeng Ren,Cyril Opeil###
(72840, 72840)
As a result, for lower hot-pressing temperature the gain in thermalconductivity reduction was offset by the loss in power factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.024, 'at', 1],[73.0, 60, 'K', 1],[87.0, 800, 'C', 1]

I
###Thermoelectric Effects and Topological Insulators|Yong Xu###
(73017, 73017)
 The recent discovery of topological insulator (T<missing VAR>I) offers new opportunitiesfor the development of thermoelectrics, because many T<missing VAR>Is (like Bi2Te3)are excellent thermoelectric (TE) materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 1.0, 'Then', 3]

Te3
###Thermoelectric Effects and Topological Insulators|Yong Xu###
(73050, 73051)
 The recent discovery of topological insulator (T<missing VAR>I) offers new opportunitiesfor the development of thermoelectrics, because many T<missing VAR>Is (like Bi2Te3)are excellent thermoelectric (TE) materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 1.0, 'Then', 3]

In
###Thermoelectric Effects and Topological Insulators|Yong Xu###
(73069, 73069)
 In this review, we will firstdescribe the general TE properties of T<missing VAR>Is and show that the coexistence of thebulk and boundary states in T<missing VAR>Is introduces unusual TE properties, includingstrong size effects and anomalous Seebeck effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 1.0, 'Then', 2]

S2
###Giant thermoelectric effect in graphene-based topological insulators with nanopores|Po-Hao Chang,Mohammad Saeed Bahramy,Naoto Nagaosa,Branislav K. Nikolic###
(73481, 73482)
 Designing thermoelectric materials with high figure of merit ZTS2 G<missing VAR>T<missing VAR>/kappa requires fulfilling three often irreconcilable conditions, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Giant thermoelectric effect in graphene-based topological insulators with nanopores|Po-Hao Chang,Mohammad Saeed Bahramy,Naoto Nagaosa,Branislav K. Nikolic###
(73539, 73539)
, thehigh electrical conductance G<missing VAR>, small thermal conductance kappa and highSeebeck coefficient S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S2
###Giant thermoelectric effect in graphene-based topological insulators with nanopores|Po-Hao Chang,Mohammad Saeed Bahramy,Naoto Nagaosa,Branislav K. Nikolic###
(73707, 73708)
 These systems, acting as a two-dimensional topological insulatorwith robust helical edge states carrying electrical current, yield a highlyoptimized power factor S2G<missing VAR> per helical conducting channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Giant thermoelectric effect in graphene-based topological insulators with nanopores|Po-Hao Chang,Mohammad Saeed Bahramy,Naoto Nagaosa,Branislav K. Nikolic###
(73818, 73818)
 Using quantum transport simulations coupled with first-principleselectronic and phononic band structure calculations, the thermoelectric figureof merit is found to reach its maximum ZT simeq 3 at T<missing VAR> simeq 40 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first principles|F. Murphy-Armando###
(73977, 73977)
 due to electronic transport only) ofsingle-crystalline bulk n<missing VAR>-type silicon-germanium alloys vs Ge composition,temperature, doping concentration and strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 3, '%', 3],[132.0, 50, '%', 3],[188.0, 50, '%', 4],[269.0, 50, '%', 5],[290.0, 70, '%', 6]

K
###Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first principles|F. Murphy-Armando###
(74137, 74137)
 We predict that 3% tensile hydrostatic strainenhances the n<missing VAR>-type ZT by 50% at carrier concentrations of n<missing VAR>1020cm-3 and temperature of T<missing VAR>1200K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 3, '%', 0],[28.0, 50, '%', 0],[28.0, 50, '%', 1],[109.0, 50, '%', 2],[130.0, 70, '%', 3]

Ge
###Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first principles|F. Murphy-Armando###
(74168, 74168)
 These enhancements occur at differentalloy compositions due to different effects at 50% Ge composition theenhancements are achieved by a strain induced decrease in the Lorenz number,while the power factor remains unchanged.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 3, '%', 1],[59.0, 50, '%', 1],[3.0, 50, '%', 0],[78.0, 50, '%', 1],[99.0, 70, '%', 2]

At
###Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first principles|F. Murphy-Armando###
(74265, 74265)
 At 70% Ge the increase in ZT is due to a largeincrease in electrical conductivity produced by populating the high mobilityGamma conduction band valley, lowered in energy by strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 3, '%', 3],[156.0, 50, '%', 3],[100.0, 50, '%', 2],[19.0, 50, '%', 1],[2.0, 70, '%', 0]

Ge
###Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first principles|F. Murphy-Armando###
(74270, 74270)
 At 70% Ge the increase in ZT is due to a largeincrease in electrical conductivity produced by populating the high mobilityGamma conduction band valley, lowered in energy by strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 3, '%', 3],[161.0, 50, '%', 3],[105.0, 50, '%', 2],[24.0, 50, '%', 1],[3.0, 70, '%', 0]

TmCu3
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74368, 74370)
Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu3Ch4 (TmV, Nb, Ta; ChS, Se, Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 4, ',', 2],[121.0, 2, 'at', 2],[122.0, 1000, 'K', 2],[238.0, 1000, 'K', 4],[299.0, 0.17, 'W', 5],[310.0, 1, 'GPa', 5],[352.0, 1000, 'K', 5],[390.0, -1, ',', 6]

TmV
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74375, 74376)
Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu3Ch4 (TmV, Nb, Ta; ChS, Se, Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 4, ',', 2],[115.0, 2, 'at', 2],[116.0, 1000, 'K', 2],[232.0, 1000, 'K', 4],[293.0, 0.17, 'W', 5],[304.0, 1, 'GPa', 5],[346.0, 1000, 'K', 5],[384.0, -1, ',', 6]

Nb
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74379, 74379)
Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu3Ch4 (TmV, Nb, Ta; ChS, Se, Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 4, ',', 2],[112.0, 2, 'at', 2],[113.0, 1000, 'K', 2],[229.0, 1000, 'K', 4],[290.0, 0.17, 'W', 5],[301.0, 1, 'GPa', 5],[343.0, 1000, 'K', 5],[381.0, -1, ',', 6]

Ta
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74382, 74382)
Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu3Ch4 (TmV, Nb, Ta; ChS, Se, Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4, ',', 2],[109.0, 2, 'at', 2],[110.0, 1000, 'K', 2],[226.0, 1000, 'K', 4],[287.0, 0.17, 'W', 5],[298.0, 1, 'GPa', 5],[340.0, 1000, 'K', 5],[378.0, -1, ',', 6]

S
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74386, 74386)
Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu3Ch4 (TmV, Nb, Ta; ChS, Se, Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 4, ',', 2],[105.0, 2, 'at', 2],[106.0, 1000, 'K', 2],[222.0, 1000, 'K', 4],[283.0, 0.17, 'W', 5],[294.0, 1, 'GPa', 5],[336.0, 1000, 'K', 5],[374.0, -1, ',', 6]

Se
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74389, 74389)
Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu3Ch4 (TmV, Nb, Ta; ChS, Se, Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 4, ',', 2],[102.0, 2, 'at', 2],[103.0, 1000, 'K', 2],[219.0, 1000, 'K', 4],[280.0, 0.17, 'W', 5],[291.0, 1, 'GPa', 5],[333.0, 1000, 'K', 5],[371.0, -1, ',', 6]

Te
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74392, 74392)
Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu3Ch4 (TmV, Nb, Ta; ChS, Se, Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 4, ',', 2],[99.0, 2, 'at', 2],[100.0, 1000, 'K', 2],[216.0, 1000, 'K', 4],[277.0, 0.17, 'W', 5],[288.0, 1, 'GPa', 5],[330.0, 1000, 'K', 5],[368.0, -1, ',', 6]

TmCu3
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74467, 74469)
Few authors reported high TE performance in TmCu3Ch4, reaching the figureof merit (ZT) above 2 at 1000K, from first-principles calculations neglectingelectron-phonon scattering, spin-orbit coupling effect (SOC), andenergy-dependent carrier lifetime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 4, ',', 0],[22.0, 2, 'at', 0],[23.0, 1000, 'K', 0],[139.0, 1000, 'K', 2],[200.0, 0.17, 'W', 3],[211.0, 1, 'GPa', 3],[253.0, 1000, 'K', 3],[291.0, -1, ',', 4]

(SOC)
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74521, 74525)
Few authors reported high TE performance in TmCu3Ch4, reaching the figureof merit (ZT) above 2 at 1000K, from first-principles calculations neglectingelectron-phonon scattering, spin-orbit coupling effect (SOC), andenergy-dependent carrier lifetime.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 4, ',', 0],[30.0, 2, 'at', 0],[29.0, 1000, 'K', 0],[83.0, 1000, 'K', 2],[144.0, 0.17, 'W', 3],[155.0, 1, 'GPa', 3],[197.0, 1000, 'K', 3],[235.0, -1, ',', 4]

TmCu3
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74552, 74554)
 Here, thermoelectric transport properties ofTmCu3Ch4 are reinvestigated through considering these parameters, andsignificant discrepancies are found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 4, ',', 1],[61.0, 2, 'at', 1],[60.0, 1000, 'K', 1],[54.0, 1000, 'K', 1],[115.0, 0.17, 'W', 2],[126.0, 1, 'GPa', 2],[168.0, 1000, 'K', 2],[206.0, -1, ',', 3]

TaCu3Te4
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74594, 74598)
 The ZT of p<missing VAR>-type TaCu3Te4 can reach3 at 1000K among these compounds due to its low lattice thermal conductivity(kappal) (0.38 W m<missing VAR>-1 K-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 4, ',', 2],[103.0, 2, 'at', 2],[102.0, 1000, 'K', 2],[10.0, 1000, 'K', 0],[71.0, 0.17, 'W', 1],[82.0, 1, 'GPa', 1],[124.0, 1000, 'K', 1],[162.0, -1, ',', 2]

W
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74639, 74639)
 The ZT of p<missing VAR>-type TaCu3Te4 can reach3 at 1000K among these compounds due to its low lattice thermal conductivity(kappal) (0.38 W m<missing VAR>-1 K-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 4, ',', 2],[148.0, 2, 'at', 2],[147.0, 1000, 'K', 2],[31.0, 1000, 'K', 0],[30.0, 0.17, 'W', 1],[41.0, 1, 'GPa', 1],[83.0, 1000, 'K', 1],[121.0, -1, ',', 2]

K
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74645, 74645)
 The ZT of p<missing VAR>-type TaCu3Te4 can reach3 at 1000K among these compounds due to its low lattice thermal conductivity(kappal) (0.38 W m<missing VAR>-1 K-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 4, ',', 2],[154.0, 2, 'at', 2],[153.0, 1000, 'K', 2],[37.0, 1000, 'K', 0],[24.0, 0.17, 'W', 1],[35.0, 1, 'GPa', 1],[77.0, 1000, 'K', 1],[115.0, -1, ',', 2]

K
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74675, 74675)
 Interestingly, the value of kappal<missing VAR> isreduced to 0.17 W m<missing VAR>-1 K-1 through 1 GPa pressure while the power factor isslightly improved due to bandgap reduction, leading to an extraordinary ZT5.5at 1000K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 4, ',', 3],[184.0, 2, 'at', 3],[183.0, 1000, 'K', 3],[67.0, 1000, 'K', 1],[6.0, 0.17, 'W', 0],[5.0, 1, 'GPa', 0],[47.0, 1000, 'K', 0],[85.0, -1, ',', 1]

Se
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74733, 74733)
 Although the substitution of Se causes a slight reduction ofkappal<missing VAR> to 0.3 W m<missing VAR>-1 K-1, the power factor is reduced significantly due tothe dramatic reduction of D<missing VAR>OS near Fermi level, which leads to lower theSeebeck coefficient largely and increase electrical conductivity slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 4, ',', 4],[242.0, 2, 'at', 4],[241.0, 1000, 'K', 4],[125.0, 1000, 'K', 2],[64.0, 0.17, 'W', 1],[53.0, 1, 'GPa', 1],[11.0, 1000, 'K', 1],[27.0, -1, ',', 0]

W
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74753, 74753)
 Although the substitution of Se causes a slight reduction ofkappal<missing VAR> to 0.3 W m<missing VAR>-1 K-1, the power factor is reduced significantly due tothe dramatic reduction of D<missing VAR>OS near Fermi level, which leads to lower theSeebeck coefficient largely and increase electrical conductivity slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 4, ',', 4],[262.0, 2, 'at', 4],[261.0, 1000, 'K', 4],[145.0, 1000, 'K', 2],[84.0, 0.17, 'W', 1],[73.0, 1, 'GPa', 1],[31.0, 1000, 'K', 1],[7.0, -1, ',', 0]

K
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74759, 74759)
 Although the substitution of Se causes a slight reduction ofkappal<missing VAR> to 0.3 W m<missing VAR>-1 K-1, the power factor is reduced significantly due tothe dramatic reduction of D<missing VAR>OS near Fermi level, which leads to lower theSeebeck coefficient largely and increase electrical conductivity slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 4, ',', 4],[268.0, 2, 'at', 4],[267.0, 1000, 'K', 4],[151.0, 1000, 'K', 2],[90.0, 0.17, 'W', 1],[79.0, 1, 'GPa', 1],[37.0, 1000, 'K', 1],[1.0, -1, ',', 0]

OS
###Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)|Enamul Haque###
(74790, 74791)
 Although the substitution of Se causes a slight reduction ofkappal<missing VAR> to 0.3 W m<missing VAR>-1 K-1, the power factor is reduced significantly due tothe dramatic reduction of D<missing VAR>OS near Fermi level, which leads to lower theSeebeck coefficient largely and increase electrical conductivity slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 4, ',', 4],[299.0, 2, 'at', 4],[298.0, 1000, 'K', 4],[182.0, 1000, 'K', 2],[121.0, 0.17, 'W', 1],[110.0, 1, 'GPa', 1],[68.0, 1000, 'K', 1],[30.0, -1, ',', 0]

In
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74861, 74861)
 In this work, both thermal and electrical transport properties ofdiamond-cubic Si (Si-I) and metastable R<missing VAR>8 phase of Si (Si-X<missing VAR>II) arecomparatively studied by using first-principles calculations combined withBoltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 300, 'to', 1],[406.0, 300, ',', 5],[409.0, 400, ',', 5],[413.0, 500, 'K', 5],[419.0, 0.24, ',', 5],[422.0, 0.43, ',', 5],[426.0, 0.63, 'along', 5],[444.0, 19, ',', 5],[450.0, 19, ',', 5],[461.0, -3, ',', 5]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74887, 74887)
 In this work, both thermal and electrical transport properties ofdiamond-cubic Si (Si-I) and metastable R<missing VAR>8 phase of Si (Si-X<missing VAR>II) arecomparatively studied by using first-principles calculations combined withBoltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 300, 'to', 1],[380.0, 300, ',', 5],[383.0, 400, ',', 5],[387.0, 500, 'K', 5],[393.0, 0.24, ',', 5],[396.0, 0.43, ',', 5],[400.0, 0.63, 'along', 5],[418.0, 19, ',', 5],[424.0, 19, ',', 5],[435.0, -3, ',', 5]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74890, 74890)
 In this work, both thermal and electrical transport properties ofdiamond-cubic Si (Si-I) and metastable R<missing VAR>8 phase of Si (Si-X<missing VAR>II) arecomparatively studied by using first-principles calculations combined withBoltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 300, 'to', 1],[377.0, 300, ',', 5],[380.0, 400, ',', 5],[384.0, 500, 'K', 5],[390.0, 0.24, ',', 5],[393.0, 0.43, ',', 5],[397.0, 0.63, 'along', 5],[415.0, 19, ',', 5],[421.0, 19, ',', 5],[432.0, -3, ',', 5]

I
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74892, 74892)
 In this work, both thermal and electrical transport properties ofdiamond-cubic Si (Si-I) and metastable R<missing VAR>8 phase of Si (Si-X<missing VAR>II) arecomparatively studied by using first-principles calculations combined withBoltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 300, 'to', 1],[375.0, 300, ',', 5],[378.0, 400, ',', 5],[382.0, 500, 'K', 5],[388.0, 0.24, ',', 5],[391.0, 0.43, ',', 5],[395.0, 0.63, 'along', 5],[413.0, 19, ',', 5],[419.0, 19, ',', 5],[430.0, -3, ',', 5]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74906, 74906)
 In this work, both thermal and electrical transport properties ofdiamond-cubic Si (Si-I) and metastable R<missing VAR>8 phase of Si (Si-X<missing VAR>II) arecomparatively studied by using first-principles calculations combined withBoltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 300, 'to', 1],[361.0, 300, ',', 5],[364.0, 400, ',', 5],[368.0, 500, 'K', 5],[374.0, 0.24, ',', 5],[377.0, 0.43, ',', 5],[381.0, 0.63, 'along', 5],[399.0, 19, ',', 5],[405.0, 19, ',', 5],[416.0, -3, ',', 5]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74909, 74909)
 In this work, both thermal and electrical transport properties ofdiamond-cubic Si (Si-I) and metastable R<missing VAR>8 phase of Si (Si-X<missing VAR>II) arecomparatively studied by using first-principles calculations combined withBoltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 300, 'to', 1],[358.0, 300, ',', 5],[361.0, 400, ',', 5],[365.0, 500, 'K', 5],[371.0, 0.24, ',', 5],[374.0, 0.43, ',', 5],[378.0, 0.63, 'along', 5],[396.0, 19, ',', 5],[402.0, 19, ',', 5],[413.0, -3, ',', 5]

I
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74913, 74913)
 In this work, both thermal and electrical transport properties ofdiamond-cubic Si (Si-I) and metastable R<missing VAR>8 phase of Si (Si-X<missing VAR>II) arecomparatively studied by using first-principles calculations combined withBoltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 300, 'to', 1],[354.0, 300, ',', 5],[357.0, 400, ',', 5],[361.0, 500, 'K', 5],[367.0, 0.24, ',', 5],[370.0, 0.43, ',', 5],[374.0, 0.63, 'along', 5],[392.0, 19, ',', 5],[398.0, 19, ',', 5],[409.0, -3, ',', 5]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74949, 74949)
 The metastable Si-X<missing VAR>II shows one magnitude lowerlattice thermal conductivity than stable Si-I from 300 to 500K, attributedfrom the stronger phonon scattering in three-phonon scattering processes ofSi-X<missing VAR>II.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 300, 'to', 0],[318.0, 300, ',', 4],[321.0, 400, ',', 4],[325.0, 500, 'K', 4],[331.0, 0.24, ',', 4],[334.0, 0.43, ',', 4],[338.0, 0.63, 'along', 4],[356.0, 19, ',', 4],[362.0, 19, ',', 4],[373.0, -3, ',', 4]

II
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74952, 74953)
 The metastable Si-X<missing VAR>II shows one magnitude lowerlattice thermal conductivity than stable Si-I from 300 to 500K, attributedfrom the stronger phonon scattering in three-phonon scattering processes ofSi-X<missing VAR>II.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 300, 'to', 0],[314.0, 300, ',', 4],[317.0, 400, ',', 4],[321.0, 500, 'K', 4],[327.0, 0.24, ',', 4],[330.0, 0.43, ',', 4],[334.0, 0.63, 'along', 4],[352.0, 19, ',', 4],[358.0, 19, ',', 4],[369.0, -3, ',', 4]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74974, 74974)
 The metastable Si-X<missing VAR>II shows one magnitude lowerlattice thermal conductivity than stable Si-I from 300 to 500K, attributedfrom the stronger phonon scattering in three-phonon scattering processes ofSi-X<missing VAR>II.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 300, 'to', 0],[293.0, 300, ',', 4],[296.0, 400, ',', 4],[300.0, 500, 'K', 4],[306.0, 0.24, ',', 4],[309.0, 0.43, ',', 4],[313.0, 0.63, 'along', 4],[331.0, 19, ',', 4],[337.0, 19, ',', 4],[348.0, -3, ',', 4]

I
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74976, 74976)
 The metastable Si-X<missing VAR>II shows one magnitude lowerlattice thermal conductivity than stable Si-I from 300 to 500K, attributedfrom the stronger phonon scattering in three-phonon scattering processes ofSi-X<missing VAR>II.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 300, 'to', 0],[291.0, 300, ',', 4],[294.0, 400, ',', 4],[298.0, 500, 'K', 4],[304.0, 0.24, ',', 4],[307.0, 0.43, ',', 4],[311.0, 0.63, 'along', 4],[329.0, 19, ',', 4],[335.0, 19, ',', 4],[346.0, -3, ',', 4]

K
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(74982, 74982)
 The metastable Si-X<missing VAR>II shows one magnitude lowerlattice thermal conductivity than stable Si-I from 300 to 500K, attributedfrom the stronger phonon scattering in three-phonon scattering processes ofSi-X<missing VAR>II.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 300, 'to', 0],[285.0, 300, ',', 4],[288.0, 400, ',', 4],[292.0, 500, 'K', 4],[298.0, 0.24, ',', 4],[301.0, 0.43, ',', 4],[305.0, 0.63, 'along', 4],[323.0, 19, ',', 4],[329.0, 19, ',', 4],[340.0, -3, ',', 4]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75011, 75011)
 The metastable Si-X<missing VAR>II shows one magnitude lowerlattice thermal conductivity than stable Si-I from 300 to 500K, attributedfrom the stronger phonon scattering in three-phonon scattering processes ofSi-X<missing VAR>II.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 300, 'to', 0],[256.0, 300, ',', 4],[259.0, 400, ',', 4],[263.0, 500, 'K', 4],[269.0, 0.24, ',', 4],[272.0, 0.43, ',', 4],[276.0, 0.63, 'along', 4],[294.0, 19, ',', 4],[300.0, 19, ',', 4],[311.0, -3, ',', 4]

II
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75014, 75015)
 The metastable Si-X<missing VAR>II shows one magnitude lowerlattice thermal conductivity than stable Si-I from 300 to 500K, attributedfrom the stronger phonon scattering in three-phonon scattering processes ofSi-X<missing VAR>II.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 300, 'to', 0],[252.0, 300, ',', 4],[255.0, 400, ',', 4],[259.0, 500, 'K', 4],[265.0, 0.24, ',', 4],[268.0, 0.43, ',', 4],[272.0, 0.63, 'along', 4],[290.0, 19, ',', 4],[296.0, 19, ',', 4],[307.0, -3, ',', 4]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75031, 75031)
 For the electronic transport properties, although Si-X<missing VAR>II withsmaller band gap (0.22 e<missing VAR>V) shows lower Seebeck coefficient, the electricalconductivities of anisotropic n<missing VAR>-type Si-X<missing VAR>II show considerable valuesalong x<missing VAR> axis due to the small effective masses of electron along thisdirection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 300, 'to', 1],[236.0, 300, ',', 3],[239.0, 400, ',', 3],[243.0, 500, 'K', 3],[249.0, 0.24, ',', 3],[252.0, 0.43, ',', 3],[256.0, 0.63, 'along', 3],[274.0, 19, ',', 3],[280.0, 19, ',', 3],[291.0, -3, ',', 3]

II
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75034, 75035)
 For the electronic transport properties, although Si-X<missing VAR>II withsmaller band gap (0.22 e<missing VAR>V) shows lower Seebeck coefficient, the electricalconductivities of anisotropic n<missing VAR>-type Si-X<missing VAR>II show considerable valuesalong x<missing VAR> axis due to the small effective masses of electron along thisdirection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 300, 'to', 1],[232.0, 300, ',', 3],[235.0, 400, ',', 3],[239.0, 500, 'K', 3],[245.0, 0.24, ',', 3],[248.0, 0.43, ',', 3],[252.0, 0.63, 'along', 3],[270.0, 19, ',', 3],[276.0, 19, ',', 3],[287.0, -3, ',', 3]

V
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75050, 75050)
 For the electronic transport properties, although Si-X<missing VAR>II withsmaller band gap (0.22 e<missing VAR>V) shows lower Seebeck coefficient, the electricalconductivities of anisotropic n<missing VAR>-type Si-X<missing VAR>II show considerable valuesalong x<missing VAR> axis due to the small effective masses of electron along thisdirection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 300, 'to', 1],[217.0, 300, ',', 3],[220.0, 400, ',', 3],[224.0, 500, 'K', 3],[230.0, 0.24, ',', 3],[233.0, 0.43, ',', 3],[237.0, 0.63, 'along', 3],[255.0, 19, ',', 3],[261.0, 19, ',', 3],[272.0, -3, ',', 3]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75077, 75077)
 For the electronic transport properties, although Si-X<missing VAR>II withsmaller band gap (0.22 e<missing VAR>V) shows lower Seebeck coefficient, the electricalconductivities of anisotropic n<missing VAR>-type Si-X<missing VAR>II show considerable valuesalong x<missing VAR> axis due to the small effective masses of electron along thisdirection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 300, 'to', 1],[190.0, 300, ',', 3],[193.0, 400, ',', 3],[197.0, 500, 'K', 3],[203.0, 0.24, ',', 3],[206.0, 0.43, ',', 3],[210.0, 0.63, 'along', 3],[228.0, 19, ',', 3],[234.0, 19, ',', 3],[245.0, -3, ',', 3]

II
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75080, 75081)
 For the electronic transport properties, although Si-X<missing VAR>II withsmaller band gap (0.22 e<missing VAR>V) shows lower Seebeck coefficient, the electricalconductivities of anisotropic n<missing VAR>-type Si-X<missing VAR>II show considerable valuesalong x<missing VAR> axis due to the small effective masses of electron along thisdirection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 300, 'to', 1],[186.0, 300, ',', 3],[189.0, 400, ',', 3],[193.0, 500, 'K', 3],[199.0, 0.24, ',', 3],[202.0, 0.43, ',', 3],[206.0, 0.63, 'along', 3],[224.0, 19, ',', 3],[230.0, 19, ',', 3],[241.0, -3, ',', 3]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75146, 75146)
 The peaks of thermoelectric figure of merit (ZT) in n<missing VAR>-typeSi-X<missing VAR>II are higher than that of p<missing VAR>-type ones along the same direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 300, 'to', 2],[121.0, 300, ',', 2],[124.0, 400, ',', 2],[128.0, 500, 'K', 2],[134.0, 0.24, ',', 2],[137.0, 0.43, ',', 2],[141.0, 0.63, 'along', 2],[159.0, 19, ',', 2],[165.0, 19, ',', 2],[176.0, -3, ',', 2]

II
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75149, 75150)
 The peaks of thermoelectric figure of merit (ZT) in n<missing VAR>-typeSi-X<missing VAR>II are higher than that of p<missing VAR>-type ones along the same direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 300, 'to', 2],[117.0, 300, ',', 2],[120.0, 400, ',', 2],[124.0, 500, 'K', 2],[130.0, 0.24, ',', 2],[133.0, 0.43, ',', 2],[137.0, 0.63, 'along', 2],[155.0, 19, ',', 2],[161.0, 19, ',', 2],[172.0, -3, ',', 2]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75202, 75202)
Owing to the lower lattice thermal conductivity and optimistic electricalconductivity, Si-X<missing VAR>II exhibits larger optimal ZT compared with Si-I inboth p<missing VAR>- and n<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 300, 'to', 3],[65.0, 300, ',', 1],[68.0, 400, ',', 1],[72.0, 500, 'K', 1],[78.0, 0.24, ',', 1],[81.0, 0.43, ',', 1],[85.0, 0.63, 'along', 1],[103.0, 19, ',', 1],[109.0, 19, ',', 1],[120.0, -3, ',', 1]

II
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75205, 75206)
Owing to the lower lattice thermal conductivity and optimistic electricalconductivity, Si-X<missing VAR>II exhibits larger optimal ZT compared with Si-I inboth p<missing VAR>- and n<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 300, 'to', 3],[61.0, 300, ',', 1],[64.0, 400, ',', 1],[68.0, 500, 'K', 1],[74.0, 0.24, ',', 1],[77.0, 0.43, ',', 1],[81.0, 0.63, 'along', 1],[99.0, 19, ',', 1],[105.0, 19, ',', 1],[116.0, -3, ',', 1]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75221, 75221)
Owing to the lower lattice thermal conductivity and optimistic electricalconductivity, Si-X<missing VAR>II exhibits larger optimal ZT compared with Si-I inboth p<missing VAR>- and n<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 300, 'to', 3],[46.0, 300, ',', 1],[49.0, 400, ',', 1],[53.0, 500, 'K', 1],[59.0, 0.24, ',', 1],[62.0, 0.43, ',', 1],[66.0, 0.63, 'along', 1],[84.0, 19, ',', 1],[90.0, 19, ',', 1],[101.0, -3, ',', 1]

I
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75223, 75223)
Owing to the lower lattice thermal conductivity and optimistic electricalconductivity, Si-X<missing VAR>II exhibits larger optimal ZT compared with Si-I inboth p<missing VAR>- and n<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 300, 'to', 3],[44.0, 300, ',', 1],[47.0, 400, ',', 1],[51.0, 500, 'K', 1],[57.0, 0.24, ',', 1],[60.0, 0.43, ',', 1],[64.0, 0.63, 'along', 1],[82.0, 19, ',', 1],[88.0, 19, ',', 1],[99.0, -3, ',', 1]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75248, 75248)
 For n<missing VAR>-type Si-X<missing VAR>II, the optimal ZTvalues at 300, 400, and 500 K can reach 0.24, 0.43, and 0.63 along x<missing VAR> axis atcarrier concentration of 2.6times1019, 4.1times1019, and4.8times1019cm-3, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 300, 'to', 4],[19.0, 300, ',', 0],[22.0, 400, ',', 0],[26.0, 500, 'K', 0],[32.0, 0.24, ',', 0],[35.0, 0.43, ',', 0],[39.0, 0.63, 'along', 0],[57.0, 19, ',', 0],[63.0, 19, ',', 0],[74.0, -3, ',', 0]

II
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75251, 75252)
 For n<missing VAR>-type Si-X<missing VAR>II, the optimal ZTvalues at 300, 400, and 500 K can reach 0.24, 0.43, and 0.63 along x<missing VAR> axis atcarrier concentration of 2.6times1019, 4.1times1019, and4.8times1019cm-3, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 300, 'to', 4],[15.0, 300, ',', 0],[18.0, 400, ',', 0],[22.0, 500, 'K', 0],[28.0, 0.24, ',', 0],[31.0, 0.43, ',', 0],[35.0, 0.63, 'along', 0],[53.0, 19, ',', 0],[59.0, 19, ',', 0],[70.0, -3, ',', 0]

Si
###High thermoelectric performance in metastable phase of silicon: a first-principles study|Yongchao Rao,C. Y. Zhao,Shenghong Ju###
(75344, 75344)
 The reported results elucidate thatthe metastable Si could be integrated to the thermoelectric power generator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 300, 'to', 5],[77.0, 300, ',', 1],[74.0, 400, ',', 1],[70.0, 500, 'K', 1],[64.0, 0.24, ',', 1],[61.0, 0.43, ',', 1],[57.0, 0.63, 'along', 1],[39.0, 19, ',', 1],[33.0, 19, ',', 1],[22.0, -3, ',', 1]

S
###Thermoelectric Properties of a Semiconductor Quantum Dot Chain Connected to Metallic Electrodes|David M. -T. Kuo,Yia-Chung Chang###
(75415, 75415)
 The thermoelectric properties of a semiconduct quantum dot chain (SQDC)connected to metallic electrodes are theoretically investigated in the Coulombblockade regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 3, ',', 1],[70.0, 4, ',', 1]

C
###Thermoelectric Properties of a Semiconductor Quantum Dot Chain Connected to Metallic Electrodes|David M. -T. Kuo,Yia-Chung Chang###
(75418, 75418)
 The thermoelectric properties of a semiconduct quantum dot chain (SQDC)connected to metallic electrodes are theoretically investigated in the Coulombblockade regime.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 3, ',', 1],[67.0, 4, ',', 1]

S
###Thermoelectric Properties of a Semiconductor Quantum Dot Chain Connected to Metallic Electrodes|David M. -T. Kuo,Yia-Chung Chang###
(75466, 75466)
 An extended Hubbard model is employed to simulate the SQDCsystem consisted of colorblueN2,3,4, and 5 quantum dots (Q<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 3, ',', 0],[19.0, 4, ',', 0]

C
###Thermoelectric Properties of a Semiconductor Quantum Dot Chain Connected to Metallic Electrodes|David M. -T. Kuo,Yia-Chung Chang###
(75469, 75469)
 An extended Hubbard model is employed to simulate the SQDCsystem consisted of colorblueN2,3,4, and 5 quantum dots (Q<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3, ',', 0],[16.0, 4, ',', 0]

N2
###Thermoelectric Properties of a Semiconductor Quantum Dot Chain Connected to Metallic Electrodes|David M. -T. Kuo,Yia-Chung Chang###
(75480, 75481)
 An extended Hubbard model is employed to simulate the SQDCsystem consisted of colorblueN2,3,4, and 5 quantum dots (Q<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 3, ',', 0],[4.0, 4, ',', 0]

Ds
###Thermoelectric Properties of a Semiconductor Quantum Dot Chain Connected to Metallic Electrodes|David M. -T. Kuo,Yia-Chung Chang###
(75498, 75498)
 An extended Hubbard model is employed to simulate the SQDCsystem consisted of colorblueN2,3,4, and 5 quantum dots (Q<missing VAR>Ds).
EXCEPTION 3: IndexError for Ds
S
[15.0, 3, ',', 0],[13.0, 4, ',', 0]

(HH)
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(75957, 75960)
 Half-Heusler (HH) phases (space group F43m<missing VAR>, Clb) are increasingly gainingattention as promising thermoelectric materials in view of their thermalstability, scalability, and environmental benignity as well as efficient poweroutput.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 1, ',', 1],[160.0, 850, 'K', 2],[362.0, 13, '%', 4]

F43
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(75969, 75970)
 Half-Heusler (HH) phases (space group F43m<missing VAR>, Clb) are increasingly gainingattention as promising thermoelectric materials in view of their thermalstability, scalability, and environmental benignity as well as efficient poweroutput.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 1, ',', 1],[150.0, 850, 'K', 2],[352.0, 13, '%', 4]

HH
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(76055, 76056)
 Until recently, the verifiable dimensionless figure of merit (ZT) of HHphases has remained moderate near 1, which limits the power conversionefficiency of these materials.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 1, ',', 0],[64.0, 850, 'K', 1],[266.0, 13, '%', 3]

Hf
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(76109, 76109)
 We report herein ZT1.3 in n<missing VAR>-type (Hf,Zr)NiSnalloys near 850 K developed through elemental substitution and simultaneouslyembedment of nanoparticles in the HH matrix, obtained by annealing the samplesclose to their melting temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1, ',', 1],[11.0, 850, 'K', 0],[213.0, 13, '%', 2]

Zr
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(76111, 76111)
 We report herein ZT1.3 in n<missing VAR>-type (Hf,Zr)NiSnalloys near 850 K developed through elemental substitution and simultaneouslyembedment of nanoparticles in the HH matrix, obtained by annealing the samplesclose to their melting temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1, ',', 1],[9.0, 850, 'K', 0],[211.0, 13, '%', 2]

NiSn
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(76113, 76114)
 We report herein ZT1.3 in n<missing VAR>-type (Hf,Zr)NiSnalloys near 850 K developed through elemental substitution and simultaneouslyembedment of nanoparticles in the HH matrix, obtained by annealing the samplesclose to their melting temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 1, ',', 1],[6.0, 850, 'K', 0],[208.0, 13, '%', 2]

HH
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(76145, 76146)
 We report herein ZT1.3 in n<missing VAR>-type (Hf,Zr)NiSnalloys near 850 K developed through elemental substitution and simultaneouslyembedment of nanoparticles in the HH matrix, obtained by annealing the samplesclose to their melting temperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1, ',', 1],[25.0, 850, 'K', 0],[176.0, 13, '%', 2]

Hf
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(76276, 76276)
 Based oncomputation, the power conversion efficiency of a n-p couple module based onthe new n<missing VAR>-type (Hf,Zr,Ti)NiSn particles-in-matrix composite and recentlyreported high-ZT p<missing VAR>-type HH phases is expected to reach 13%, comparable to thatof state-of-the-art materials, but with the mentioned additional materials andenvironmental attributes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 1, ',', 3],[156.0, 850, 'K', 2],[46.0, 13, '%', 0]

Zr
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(76278, 76278)
 Based oncomputation, the power conversion efficiency of a n-p couple module based onthe new n<missing VAR>-type (Hf,Zr,Ti)NiSn particles-in-matrix composite and recentlyreported high-ZT p<missing VAR>-type HH phases is expected to reach 13%, comparable to thatof state-of-the-art materials, but with the mentioned additional materials andenvironmental attributes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 1, ',', 3],[158.0, 850, 'K', 2],[44.0, 13, '%', 0]

Ti
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(76280, 76280)
 Based oncomputation, the power conversion efficiency of a n-p couple module based onthe new n<missing VAR>-type (Hf,Zr,Ti)NiSn particles-in-matrix composite and recentlyreported high-ZT p<missing VAR>-type HH phases is expected to reach 13%, comparable to thatof state-of-the-art materials, but with the mentioned additional materials andenvironmental attributes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 1, ',', 3],[160.0, 850, 'K', 2],[42.0, 13, '%', 0]

NiSn
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(76282, 76283)
 Based oncomputation, the power conversion efficiency of a n-p couple module based onthe new n<missing VAR>-type (Hf,Zr,Ti)NiSn particles-in-matrix composite and recentlyreported high-ZT p<missing VAR>-type HH phases is expected to reach 13%, comparable to thatof state-of-the-art materials, but with the mentioned additional materials andenvironmental attributes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 1, ',', 3],[162.0, 850, 'K', 2],[39.0, 13, '%', 0]

HH
###Half Heusler Alloys for Efficient Thermoelectric Power Conversion|L. Chen,X. Zeng,T. M. Tritt,S. J. Poon###
(76309, 76310)
 Based oncomputation, the power conversion efficiency of a n-p couple module based onthe new n<missing VAR>-type (Hf,Zr,Ti)NiSn particles-in-matrix composite and recentlyreported high-ZT p<missing VAR>-type HH phases is expected to reach 13%, comparable to thatof state-of-the-art materials, but with the mentioned additional materials andenvironmental attributes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 1, ',', 3],[189.0, 850, 'K', 2],[12.0, 13, '%', 0]

ZnO
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76446, 76447)
Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1, 'at', 4],[174.0, 1.5, 'wt', 4],[332.0, 3.4, 'eV', 6],[348.0, 0.5, 'eV', 6],[387.0, 95, '%', 7]

ZnO
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76463, 76464)
 ZnO is a promising candidate as an environment friendly thermoelectric (TE)material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 1, 'at', 3],[157.0, 1.5, 'wt', 3],[315.0, 3.4, 'eV', 5],[331.0, 0.5, 'eV', 5],[370.0, 95, '%', 6]

O
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76576, 76576)
 Here wedemonstrate that selective enhancement in phonon scattering leads to increasein zT of RGO encapsulated Al-doped ZnO core shell nanohybrids, synthesized viaa facile and scalable method.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1, 'at', 1],[45.0, 1.5, 'wt', 1],[203.0, 3.4, 'eV', 3],[219.0, 0.5, 'eV', 3],[258.0, 95, '%', 4]

Al
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76580, 76580)
 Here wedemonstrate that selective enhancement in phonon scattering leads to increasein zT of RGO encapsulated Al-doped ZnO core shell nanohybrids, synthesized viaa facile and scalable method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1, 'at', 1],[41.0, 1.5, 'wt', 1],[199.0, 3.4, 'eV', 3],[215.0, 0.5, 'eV', 3],[254.0, 95, '%', 4]

ZnO
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76584, 76585)
 Here wedemonstrate that selective enhancement in phonon scattering leads to increasein zT of RGO encapsulated Al-doped ZnO core shell nanohybrids, synthesized viaa facile and scalable method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1, 'at', 1],[36.0, 1.5, 'wt', 1],[194.0, 3.4, 'eV', 3],[210.0, 0.5, 'eV', 3],[249.0, 95, '%', 4]

Al
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76618, 76618)
 The incorporation of 1 at% Al with 1.5 wt% RGOinto ZnO (AGZO) has been found to show significant enhancement in zT (0.52 at1100 K) which is an order of magnitude larger compared to that of bare undopedZnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1, 'at', 0],[3.0, 1.5, 'wt', 0],[161.0, 3.4, 'eV', 2],[177.0, 0.5, 'eV', 2],[216.0, 95, '%', 3]

O
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76626, 76626)
 The incorporation of 1 at% Al with 1.5 wt% RGOinto ZnO (AGZO) has been found to show significant enhancement in zT (0.52 at1100 K) which is an order of magnitude larger compared to that of bare undopedZnO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1, 'at', 0],[5.0, 1.5, 'wt', 0],[153.0, 3.4, 'eV', 2],[169.0, 0.5, 'eV', 2],[208.0, 95, '%', 3]

ZnO
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76631, 76632)
 The incorporation of 1 at% Al with 1.5 wt% RGOinto ZnO (AGZO) has been found to show significant enhancement in zT (0.52 at1100 K) which is an order of magnitude larger compared to that of bare undopedZnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1, 'at', 0],[10.0, 1.5, 'wt', 0],[147.0, 3.4, 'eV', 2],[163.0, 0.5, 'eV', 2],[202.0, 95, '%', 3]

O
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76638, 76638)
 The incorporation of 1 at% Al with 1.5 wt% RGOinto ZnO (AGZO) has been found to show significant enhancement in zT (0.52 at1100 K) which is an order of magnitude larger compared to that of bare undopedZnO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1, 'at', 0],[17.0, 1.5, 'wt', 0],[141.0, 3.4, 'eV', 2],[157.0, 0.5, 'eV', 2],[196.0, 95, '%', 3]

K
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76668, 76668)
 The incorporation of 1 at% Al with 1.5 wt% RGOinto ZnO (AGZO) has been found to show significant enhancement in zT (0.52 at1100 K) which is an order of magnitude larger compared to that of bare undopedZnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1, 'at', 0],[47.0, 1.5, 'wt', 0],[111.0, 3.4, 'eV', 2],[127.0, 0.5, 'eV', 2],[166.0, 95, '%', 3]

ZnO
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76698, 76699)
 The incorporation of 1 at% Al with 1.5 wt% RGOinto ZnO (AGZO) has been found to show significant enhancement in zT (0.52 at1100 K) which is an order of magnitude larger compared to that of bare undopedZnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1, 'at', 0],[77.0, 1.5, 'wt', 0],[80.0, 3.4, 'eV', 2],[96.0, 0.5, 'eV', 2],[135.0, 95, '%', 3]

O
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76723, 76723)
 Photoluminescence and X<missing VAR>-ray photoelectron spectroscopy measurementsconfirm that RGO encapsulation significantly quenches surface oxygen vacanciesin ZnO along with nucleation of new interstitial Zn donor states.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 1, 'at', 1],[102.0, 1.5, 'wt', 1],[56.0, 3.4, 'eV', 1],[72.0, 0.5, 'eV', 1],[111.0, 95, '%', 2]

ZnO
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76740, 76741)
 Photoluminescence and X<missing VAR>-ray photoelectron spectroscopy measurementsconfirm that RGO encapsulation significantly quenches surface oxygen vacanciesin ZnO along with nucleation of new interstitial Zn donor states.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 1, 'at', 1],[119.0, 1.5, 'wt', 1],[38.0, 3.4, 'eV', 1],[54.0, 0.5, 'eV', 1],[93.0, 95, '%', 2]

Zn
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76755, 76755)
 Photoluminescence and X<missing VAR>-ray photoelectron spectroscopy measurementsconfirm that RGO encapsulation significantly quenches surface oxygen vacanciesin ZnO along with nucleation of new interstitial Zn donor states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 1, 'at', 1],[134.0, 1.5, 'wt', 1],[24.0, 3.4, 'eV', 1],[40.0, 0.5, 'eV', 1],[79.0, 95, '%', 2]

ZnO
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76785, 76786)
 Tunnelingspectroscopy reveals that the band gap of  3.4 eV for bare ZnO reduceseffectively to  0.5 eV upon RGO encapsulation, facilitating charge transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 1, 'at', 2],[164.0, 1.5, 'wt', 2],[6.0, 3.4, 'eV', 0],[9.0, 0.5, 'eV', 0],[48.0, 95, '%', 1]

O
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76801, 76801)
 Tunnelingspectroscopy reveals that the band gap of  3.4 eV for bare ZnO reduceseffectively to  0.5 eV upon RGO encapsulation, facilitating charge transport.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 1, 'at', 2],[180.0, 1.5, 'wt', 2],[22.0, 3.4, 'eV', 0],[6.0, 0.5, 'eV', 0],[33.0, 95, '%', 1]

O
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76866, 76866)
The electrical conductivity enhancement also benefits from the more than 95%densification achieved, using the spark plasma sintering method, which aidsreduction of G<missing VAR>O into RGO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 1, 'at', 3],[245.0, 1.5, 'wt', 3],[87.0, 3.4, 'eV', 1],[71.0, 0.5, 'eV', 1],[32.0, 95, '%', 0]

O
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76872, 76872)
The electrical conductivity enhancement also benefits from the more than 95%densification achieved, using the spark plasma sintering method, which aidsreduction of G<missing VAR>O into RGO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 1, 'at', 3],[251.0, 1.5, 'wt', 3],[93.0, 3.4, 'eV', 1],[77.0, 0.5, 'eV', 1],[38.0, 95, '%', 0]

Al
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76879, 76879)
 The same Al doping and RGO capping synergisticallybrings about drastic reduction of thermal conductivity, through enhancedphonon-phonon and point defect-phonon scatterings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 1, 'at', 4],[258.0, 1.5, 'wt', 4],[100.0, 3.4, 'eV', 2],[84.0, 0.5, 'eV', 2],[45.0, 95, '%', 1]

O
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76887, 76887)
 The same Al doping and RGO capping synergisticallybrings about drastic reduction of thermal conductivity, through enhancedphonon-phonon and point defect-phonon scatterings.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 1, 'at', 4],[266.0, 1.5, 'wt', 4],[108.0, 3.4, 'eV', 2],[92.0, 0.5, 'eV', 2],[53.0, 95, '%', 1]

O
###Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids|Soumya Biswas,Saurabh Singh,Shubham Singh,Shashwata Chattopadhyay,K. K. H. De Silva,M. Yoshimura,J. Mitra,Vinayak Kamble###
(76992, 76992)
 Overall, a practically viable route for synthesis of oxide - RGO TEmaterial which could find its practical applications for the high-temperatureTE power generation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 1, 'at', 6],[371.0, 1.5, 'wt', 6],[213.0, 3.4, 'eV', 4],[197.0, 0.5, 'eV', 4],[158.0, 95, '%', 3]

(HH)
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77067, 77070)
 The thermoelectric properties of 54 different group 4 half-Heusler (HH)alloys have been studied from first principles.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 4, 'half', 1],[7.0, 54, 'different', 0],[4.0, 4, 'half', 0],[411.0, 14, 'or', 8],[442.0, 4, 'elements', 8]

HH
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77207, 77208)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 4, 'half', 4],[147.0, 54, 'different', 3],[144.0, 4, 'half', 3],[273.0, 14, 'or', 5],[304.0, 4, 'elements', 5]

Ti
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77249, 77249)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 4, 'half', 4],[189.0, 54, 'different', 3],[186.0, 4, 'half', 3],[232.0, 14, 'or', 5],[263.0, 4, 'elements', 5]

Zr
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77251, 77251)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 4, 'half', 4],[191.0, 54, 'different', 3],[188.0, 4, 'half', 3],[230.0, 14, 'or', 5],[261.0, 4, 'elements', 5]

Hf
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77253, 77253)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 4, 'half', 4],[193.0, 54, 'different', 3],[190.0, 4, 'half', 3],[228.0, 14, 'or', 5],[259.0, 4, 'elements', 5]

Co
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77256, 77256)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 4, 'half', 4],[196.0, 54, 'different', 3],[193.0, 4, 'half', 3],[225.0, 14, 'or', 5],[256.0, 4, 'elements', 5]

Rh
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77258, 77258)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 4, 'half', 4],[198.0, 54, 'different', 3],[195.0, 4, 'half', 3],[223.0, 14, 'or', 5],[254.0, 4, 'elements', 5]

Ir
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77260, 77260)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 4, 'half', 4],[200.0, 54, 'different', 3],[197.0, 4, 'half', 3],[221.0, 14, 'or', 5],[252.0, 4, 'elements', 5]

As
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77263, 77263)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 4, 'half', 4],[203.0, 54, 'different', 3],[200.0, 4, 'half', 3],[218.0, 14, 'or', 5],[249.0, 4, 'elements', 5]

Sb
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77265, 77265)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 4, 'half', 4],[205.0, 54, 'different', 3],[202.0, 4, 'half', 3],[216.0, 14, 'or', 5],[247.0, 4, 'elements', 5]

Bi
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77267, 77267)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 4, 'half', 4],[207.0, 54, 'different', 3],[204.0, 4, 'half', 3],[214.0, 14, 'or', 5],[245.0, 4, 'elements', 5]

Ti
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77282, 77282)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 4, 'half', 4],[222.0, 54, 'different', 3],[219.0, 4, 'half', 3],[199.0, 14, 'or', 5],[230.0, 4, 'elements', 5]

Zr
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77284, 77284)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 4, 'half', 4],[224.0, 54, 'different', 3],[221.0, 4, 'half', 3],[197.0, 14, 'or', 5],[228.0, 4, 'elements', 5]

Hf
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77286, 77286)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 4, 'half', 4],[226.0, 54, 'different', 3],[223.0, 4, 'half', 3],[195.0, 14, 'or', 5],[226.0, 4, 'elements', 5]

Ni
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77289, 77289)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 4, 'half', 4],[229.0, 54, 'different', 3],[226.0, 4, 'half', 3],[192.0, 14, 'or', 5],[223.0, 4, 'elements', 5]

Pd
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77291, 77291)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 4, 'half', 4],[231.0, 54, 'different', 3],[228.0, 4, 'half', 3],[190.0, 14, 'or', 5],[221.0, 4, 'elements', 5]

Pt
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77293, 77293)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 4, 'half', 4],[233.0, 54, 'different', 3],[230.0, 4, 'half', 3],[188.0, 14, 'or', 5],[219.0, 4, 'elements', 5]

Ge
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77296, 77296)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 4, 'half', 4],[236.0, 54, 'different', 3],[233.0, 4, 'half', 3],[185.0, 14, 'or', 5],[216.0, 4, 'elements', 5]

Sn
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77298, 77298)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 4, 'half', 4],[238.0, 54, 'different', 3],[235.0, 4, 'half', 3],[183.0, 14, 'or', 5],[214.0, 4, 'elements', 5]

Pb
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77300, 77300)
 HHalloys have an it XYZ composition and those studied here are in the group4-9-15 (Ti,Zr,Hf)(Co,Rh,Ir)(As,Sb,Bi) and group 4-10-14(Ti,Zr,Hf)(Ni,Pd,Pt)(Ge,Sn,Pb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 4, 'half', 4],[240.0, 54, 'different', 3],[237.0, 4, 'half', 3],[181.0, 14, 'or', 5],[212.0, 4, 'elements', 5]

ZrNiSn
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77523, 77525)
 The calculations confirmed that ZrNiSn, ZrCoSb and ZrCoBibased alloys display promising thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[477.0, 4, 'half', 10],[463.0, 54, 'different', 9],[460.0, 4, 'half', 9],[42.0, 14, 'or', 1],[11.0, 4, 'elements', 1]

ZrCoSb
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77528, 77530)
 The calculations confirmed that ZrNiSn, ZrCoSb and ZrCoBibased alloys display promising thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[482.0, 4, 'half', 10],[468.0, 54, 'different', 9],[465.0, 4, 'half', 9],[47.0, 14, 'or', 1],[16.0, 4, 'elements', 1]

ZrCoBi
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77534, 77536)
 The calculations confirmed that ZrNiSn, ZrCoSb and ZrCoBibased alloys display promising thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[488.0, 4, 'half', 10],[474.0, 54, 'different', 9],[471.0, 4, 'half', 9],[53.0, 14, 'or', 1],[22.0, 4, 'elements', 1]

HH
###Thermoelectric transport trends in group 4 half-Heusler alloys|Kristian Berland,Nina Shulumba,Olle Hellman,Clas Persson,Ole Martin Løvvik###
(77632, 77633)
 This study provides insight into thethermoelectric potential of HH alloys and casts light on strategies to optimizethermoelectric performance of multicomponent alloys.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[586.0, 4, 'half', 12],[572.0, 54, 'different', 11],[569.0, 4, 'half', 11],[151.0, 14, 'or', 3],[120.0, 4, 'elements', 3]

As
###A numerical study on the design trade-offs of a thin-film thermoelectric generator for large-area applications|Kirsi Tappura###
(78036, 78036)
 As very thin thermoelectric films are employed with modesttemperature gradients, high aspect-ratio elements are needed to meet the -usually ignored - requirements of practical applications for the current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion|Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(78330, 78330)
 In thisstudy, we theoretically demonstrate that pnictogen-dichalcogenide layeredcompounds, which originally attracted attention as a family of superconductorsand have recently been investigated as thermoelectric materials, can exhibitvery high thermoelectric performance with elemental substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion|Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(78412, 78412)
 Inparticular, we clarify a promising guiding principle for materials design andfind that LaOAsSe2, a material that has yet to be synthesized, has apowerfactor that is six times as large as that of the known compound LaOBiS2and can exhibit a very large ZT under some plausible assumptions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaOAsSe2
###Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion|Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(78443, 78447)
 Inparticular, we clarify a promising guiding principle for materials design andfind that LaOAsSe2, a material that has yet to be synthesized, has apowerfactor that is six times as large as that of the known compound LaOBiS2and can exhibit a very large ZT under some plausible assumptions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaOBiS2
###Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion|Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(78498, 78502)
 Inparticular, we clarify a promising guiding principle for materials design andfind that LaOAsSe2, a material that has yet to be synthesized, has apowerfactor that is six times as large as that of the known compound LaOBiS2and can exhibit a very large ZT under some plausible assumptions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Edge currents and nanopore arrays in zigzag and chiral graphene nanoribbons as a route toward high-$ZT$ thermoelectrics|Po-Hao Chang,Branislav K. Nikolic###
(78739, 78739)
 We analyze electronic and phononic quantum transport through zigzag or chiralgraphene nanoribbons (G<missing VAR>NRs) perforated with an array of nanopores.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Edge currents and nanopore arrays in zigzag and chiral graphene nanoribbons as a route toward high-$ZT$ thermoelectrics|Po-Hao Chang,Branislav K. Nikolic###
(78772, 78772)
 Since localcharge current profiles in these G<missing VAR>NRs are peaked around their edges, drillingnanopores in their interior does not affect such edge charge currents whiledrastically reducing heat current carried by phonons in sufficiently longwires.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Edge currents and nanopore arrays in zigzag and chiral graphene nanoribbons as a route toward high-$ZT$ thermoelectrics|Po-Hao Chang,Branislav K. Nikolic###
(78915, 78915)
 The combination of these two effects can yield highly efficientthermoelectric devices with maximum ZT simeq 11 at liquid nitrogentemperature and ZT simeq 4 at room temperature achieved in sim 1 mum<missing VAR>long zigzag G<missing VAR>NRs with nanopores of variable diameter and spacing between them.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr3Rh4Sn13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79046, 79051)
Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 240, 'K', 1],[40.0, 380, 'K', 1],[128.0, 380, 'K', 2],[305.0, 0.006, 'up', 6],[308.0, 0.017, 'with', 6],[315.0, 240, 'K', 6]

Yb3Co4Ge13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79055, 79060)
Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 240, 'K', 1],[31.0, 380, 'K', 1],[119.0, 380, 'K', 2],[296.0, 0.006, 'up', 6],[299.0, 0.017, 'with', 6],[306.0, 240, 'K', 6]

Yb3Co4Sn13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79064, 79069)
Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 240, 'K', 1],[22.0, 380, 'K', 1],[110.0, 380, 'K', 2],[287.0, 0.006, 'up', 6],[290.0, 0.017, 'with', 6],[297.0, 240, 'K', 6]

Yb3Co4Ge13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79097, 79102)
 Crystallographic data and thermoelectric properties (from 240 K up to 380 K)of Yb3Co4Ge13, Yb3Co4Sn13 compounds and Yb2CeCo4Ge13 and Yb2.3La0.7Co4Ge13solid solutions are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 240, 'K', 0],[6.0, 380, 'K', 0],[77.0, 380, 'K', 1],[254.0, 0.006, 'up', 5],[257.0, 0.017, 'with', 5],[264.0, 240, 'K', 5]

Yb3Co4Sn13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79105, 79110)
 Crystallographic data and thermoelectric properties (from 240 K up to 380 K)of Yb3Co4Ge13, Yb3Co4Sn13 compounds and Yb2CeCo4Ge13 and Yb2.3La0.7Co4Ge13solid solutions are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 240, 'K', 0],[14.0, 380, 'K', 0],[69.0, 380, 'K', 1],[246.0, 0.006, 'up', 5],[249.0, 0.017, 'with', 5],[256.0, 240, 'K', 5]

Yb2CeCo4Ge13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79116, 79122)
 Crystallographic data and thermoelectric properties (from 240 K up to 380 K)of Yb3Co4Ge13, Yb3Co4Sn13 compounds and Yb2CeCo4Ge13 and Yb2.3La0.7Co4Ge13solid solutions are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 240, 'K', 0],[25.0, 380, 'K', 0],[57.0, 380, 'K', 1],[234.0, 0.006, 'up', 5],[237.0, 0.017, 'with', 5],[244.0, 240, 'K', 5]

Yb2.3La0.7Co4Ge13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79126, 79133)
 Crystallographic data and thermoelectric properties (from 240 K up to 380 K)of Yb3Co4Ge13, Yb3Co4Sn13 compounds and Yb2CeCo4Ge13 and Yb2.3La0.7Co4Ge13solid solutions are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.034999999999999996,0,0,0,0,0,0,0,0,0,0,0,0,0.11499999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 240, 'K', 0],[35.0, 380, 'K', 0],[46.0, 380, 'K', 1],[223.0, 0.006, 'up', 5],[226.0, 0.017, 'with', 5],[233.0, 240, 'K', 5]

S
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79198, 79198)
 The Seebeck coefficient is S  14 - 27 muV//K for Yb3Co4Sn13, and S  -21 -- -12 mu V/K for Yb3Co4Ge13.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 240, 'K', 2],[107.0, 380, 'K', 2],[19.0, 380, 'K', 1],[158.0, 0.006, 'up', 3],[161.0, 0.017, 'with', 3],[168.0, 240, 'K', 3]

V
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79210, 79210)
 The Seebeck coefficient is S  14 - 27 muV//K for Yb3Co4Sn13, and S  -21 -- -12 mu V/K for Yb3Co4Ge13.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 240, 'K', 2],[119.0, 380, 'K', 2],[31.0, 380, 'K', 1],[146.0, 0.006, 'up', 3],[149.0, 0.017, 'with', 3],[156.0, 240, 'K', 3]

K
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79213, 79213)
 The Seebeck coefficient is S  14 - 27 muV//K for Yb3Co4Sn13, and S  -21 -- -12 mu V/K for Yb3Co4Ge13.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 240, 'K', 2],[122.0, 380, 'K', 2],[34.0, 380, 'K', 1],[143.0, 0.006, 'up', 3],[146.0, 0.017, 'with', 3],[153.0, 240, 'K', 3]

Yb3Co4Sn13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79217, 79222)
 The Seebeck coefficient is S  14 - 27 muV//K for Yb3Co4Sn13, and S  -21 -- -12 mu V/K for Yb3Co4Ge13.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 240, 'K', 2],[126.0, 380, 'K', 2],[38.0, 380, 'K', 1],[134.0, 0.006, 'up', 3],[137.0, 0.017, 'with', 3],[144.0, 240, 'K', 3]

S
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79227, 79227)
 The Seebeck coefficient is S  14 - 27 muV//K for Yb3Co4Sn13, and S  -21 -- -12 mu V/K for Yb3Co4Ge13.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 240, 'K', 2],[136.0, 380, 'K', 2],[48.0, 380, 'K', 1],[129.0, 0.006, 'up', 3],[132.0, 0.017, 'with', 3],[139.0, 240, 'K', 3]

V/K
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79241, 79243)
 The Seebeck coefficient is S  14 - 27 muV//K for Yb3Co4Sn13, and S  -21 -- -12 mu V/K for Yb3Co4Ge13.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[155.0, 240, 'K', 2],[150.0, 380, 'K', 2],[62.0, 380, 'K', 1],[113.0, 0.006, 'up', 3],[116.0, 0.017, 'with', 3],[123.0, 240, 'K', 3]

Yb3Co4Ge13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79247, 79252)
 The Seebeck coefficient is S  14 - 27 muV//K for Yb3Co4Sn13, and S  -21 -- -12 mu V/K for Yb3Co4Ge13.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 240, 'K', 2],[156.0, 380, 'K', 2],[68.0, 380, 'K', 1],[104.0, 0.006, 'up', 3],[107.0, 0.017, 'with', 3],[114.0, 240, 'K', 3]

Yb
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79262, 79262)
 Thesubstitution of Yb for cerium or lanthanum in Yb3Co4Ge13 shifts the Seeebeckcoefficient to positive values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 240, 'K', 3],[171.0, 380, 'K', 3],[83.0, 380, 'K', 2],[94.0, 0.006, 'up', 2],[97.0, 0.017, 'with', 2],[104.0, 240, 'K', 2]

Yb3Co4Ge13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79274, 79279)
 Thesubstitution of Yb for cerium or lanthanum in Yb3Co4Ge13 shifts the Seeebeckcoefficient to positive values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 240, 'K', 3],[183.0, 380, 'K', 3],[95.0, 380, 'K', 2],[77.0, 0.006, 'up', 2],[80.0, 0.017, 'with', 2],[87.0, 240, 'K', 2]

Yb3Co4Sn13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79299, 79304)
 The Yb3Co4Sn13 has a maximal ZT parameter fromavailable Pr3Rh4Sn13-type compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 240, 'K', 4],[208.0, 380, 'K', 4],[120.0, 380, 'K', 3],[52.0, 0.006, 'up', 1],[55.0, 0.017, 'with', 1],[62.0, 240, 'K', 1]

Pr3Rh4Sn13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79322, 79327)
 The Yb3Co4Sn13 has a maximal ZT parameter fromavailable Pr3Rh4Sn13-type compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 240, 'K', 4],[231.0, 380, 'K', 4],[143.0, 380, 'K', 3],[29.0, 0.006, 'up', 1],[32.0, 0.017, 'with', 1],[39.0, 240, 'K', 1]

Yb3Co4Sn13
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79343, 79348)
 The ZT parameter of Yb3Co4Sn13 compoundincreases from 0.006 up to 0.017 with increasing temperature from 240 K to 380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 240, 'K', 5],[252.0, 380, 'K', 5],[164.0, 380, 'K', 4],[8.0, 0.006, 'up', 0],[11.0, 0.017, 'with', 0],[18.0, 240, 'K', 0]

K
###Thermoelectric properties of Pr3Rh4Sn13-type Yb3Co4Ge13 and Yb3Co4Sn13 compounds|A. V. Morozkin,V. Yu. Irkhin,V. N. Nikiforov###
(79373, 79373)
 The ZT parameter of Yb3Co4Sn13 compoundincreases from 0.006 up to 0.017 with increasing temperature from 240 K to 380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 240, 'K', 5],[282.0, 380, 'K', 5],[194.0, 380, 'K', 4],[17.0, 0.006, 'up', 0],[14.0, 0.017, 'with', 0],[7.0, 240, 'K', 0]

Ba2BiAu
###High $n$-type thermoelectric power factor and efficiency in Ba$_{2}$BiAu from a highly dispersive band|Junsoo Park,Yi Xia,Vidvuds Ozoliņš###
(79402, 79405)
High n<missing VAR>-type thermoelectric power factor and efficiency in Ba2BiAu from a highly dispersive band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 800, 'K', 1],[112.0, 7, 'mW', 2],[123.0, 500, 'K', 2]

Ba2BiAu
###High $n$-type thermoelectric power factor and efficiency in Ba$_{2}$BiAu from a highly dispersive band|Junsoo Park,Yi Xia,Vidvuds Ozoliņš###
(79464, 79467)
 Using first-principles density-functional theory calculations, we predict thepotential for unprecedented thermoelectric efficiency zT5 at 800 K inn<missing VAR>-type Ba2BiAu full-Heusler compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 800, 'K', 0],[50.0, 7, 'mW', 1],[61.0, 500, 'K', 1]

K
###High $n$-type thermoelectric power factor and efficiency in Ba$_{2}$BiAu from a highly dispersive band|Junsoo Park,Yi Xia,Vidvuds Ozoliņš###
(79523, 79523)
 Such a high efficiency arises froman intrinsically ultralow lattice thermal conductivity coupled with a very highpower factor reaching 7 mW m<missing VAR>-1 K-2 at 500 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 800, 'K', 1],[6.0, 7, 'mW', 0],[5.0, 500, 'K', 0]

In
###High $n$-type thermoelectric power factor and efficiency in Ba$_{2}$BiAu from a highly dispersive band|Junsoo Park,Yi Xia,Vidvuds Ozoliņš###
(79605, 79605)
 In contrast, theflat-and-dispersive (a.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 800, 'K', 4],[88.0, 7, 'mW', 3],[77.0, 500, 'K', 3]

Ba2BiAu
###High $n$-type thermoelectric power factor and efficiency in Ba$_{2}$BiAu from a highly dispersive band|Junsoo Park,Yi Xia,Vidvuds Ozoliņš###
(79638, 79641)
 low-dimensional) valence band of Ba2BiAu failto generate a high power factor due to strong acoustic phonon scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 800, 'K', 7],[121.0, 7, 'mW', 6],[110.0, 500, 'K', 6]

NSN
###Even-odd effect in the thermopower and strongly enhanced thermoelectric efficiency for superconducting single-electron transistors|Christopher Eltschka,Jens Siewert###
(79812, 79814)
 It is well known that the transport properties of single-electron transistorswith a superconducting island and normal-conducting leads (NSN SET) may dependon whether or not there is a single quasiparticle on the island.
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Even-odd effect in the thermopower and strongly enhanced thermoelectric efficiency for superconducting single-electron transistors|Christopher Eltschka,Jens Siewert###
(79816, 79816)
 It is well known that the transport properties of single-electron transistorswith a superconducting island and normal-conducting leads (NSN SET) may dependon whether or not there is a single quasiparticle on the island.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NSN
###Even-odd effect in the thermopower and strongly enhanced thermoelectric efficiency for superconducting single-electron transistors|Christopher Eltschka,Jens Siewert###
(79888, 79890)
 Here weanalyze the thermopower of NSN SET with and without parity effect, for entirelyrealistic values of device parameters.
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Even-odd effect in the thermopower and strongly enhanced thermoelectric efficiency for superconducting single-electron transistors|Christopher Eltschka,Jens Siewert###
(79892, 79892)
 Here weanalyze the thermopower of NSN SET with and without parity effect, for entirelyrealistic values of device parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs/InP
###Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots|Domenic Prete,Paolo Andrea Erdman,Valeria Demontis,Valentina Zannier,Daniele Ercolani,Lucia Sorba,Fabio Beltram,Francesco Rossella,Fabio Taddei,Stefano Roddaro###
(80368, 80372)
Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[4.0, 30, 'K', 0],[259.0, 35, 'at', 4],[260.0, 30, 'K', 4]

InAs/InP
###Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots|Domenic Prete,Paolo Andrea Erdman,Valeria Demontis,Valentina Zannier,Daniele Ercolani,Lucia Sorba,Fabio Beltram,Francesco Rossella,Fabio Taddei,Stefano Roddaro###
(80395, 80399)
 We demonstrate high-temperature thermoelectric conversion in InAs/InPnanowire quantum dots by taking advantage of their strong electronicconfinement.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[31.0, 30, 'K', 1],[232.0, 35, 'at', 3],[233.0, 30, 'K', 3]

S
###Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots|Domenic Prete,Paolo Andrea Erdman,Valeria Demontis,Valentina Zannier,Daniele Ercolani,Lucia Sorba,Fabio Beltram,Francesco Rossella,Fabio Taddei,Stefano Roddaro###
(80440, 80440)
 The electrical conductance G<missing VAR> and the thermopower S are obtainedfrom charge transport measurements and accurately reproduced with a theoreticalmodel accounting for the multi-level structure of the quantum dot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 30, 'K', 2],[191.0, 35, 'at', 2],[192.0, 30, 'K', 2]

K
###Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots|Domenic Prete,Paolo Andrea Erdman,Valeria Demontis,Valentina Zannier,Daniele Ercolani,Lucia Sorba,Fabio Beltram,Francesco Rossella,Fabio Taddei,Stefano Roddaro###
(80581, 80581)
 Bytaking into account two spin-degenerate energy levels we are able to evaluatethe electronic thermal conductance K and investigate the evolution of theelectronic figure of merit ZT as a function of the quantum dot configurationand demonstrate ZT  35 at 30 K, corresponding to an electronic effciency atmaximum power close to the Curzon- Ahlborn limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 30, 'K', 4],[50.0, 35, 'at', 0],[51.0, 30, 'K', 0]

(PbTe)2
###High thermoelectric performance of two-dimensional (PbTe)2 layer|Caiyu Sheng,Dengdong Fan,Huijun Liu###
(80686, 80690)
High thermoelectric performance of two-dimensional (PbTe)2 layer.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 2.9, 'can', 4],[207.0, 1000, 'K', 4],[243.0, 300, 'K', 5],[246.0, 800, 'K', 5]

(PbTe)2
###High thermoelectric performance of two-dimensional (PbTe)2 layer|Caiyu Sheng,Dengdong Fan,Huijun Liu###
(80712, 80716)
 The electronic, phonon and thermoelectric transport properties of (PbTe)2layer are systematically investigated by using first-principles pseudopotentialmethod and Boltzmann transport equation.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 2.9, 'can', 3],[181.0, 1000, 'K', 3],[217.0, 300, 'K', 4],[220.0, 800, 'K', 4]

Pb
###High thermoelectric performance of two-dimensional (PbTe)2 layer|Caiyu Sheng,Dengdong Fan,Huijun Liu###
(80842, 80842)
 Moreover, the intrinsic van derWaals interactions between neighboring Pb layers induce additional phononscattering and thus ultrasmall lattice thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2.9, 'can', 1],[55.0, 1000, 'K', 1],[91.0, 300, 'K', 2],[94.0, 800, 'K', 2]

As
###High thermoelectric performance of two-dimensional (PbTe)2 layer|Caiyu Sheng,Dengdong Fan,Huijun Liu###
(80868, 80868)
 As a consequence,a maximum p<missing VAR>-type ZT value of 2.9 can be achieved at 1000 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2.9, 'can', 0],[29.0, 1000, 'K', 0],[65.0, 300, 'K', 1],[68.0, 800, 'K', 1]

Fe2V0.8W0.2Al
###On the structure and electronic properties of Fe$_2$V$_{0.8}$W$_{0.2}$Al thin films|E. Alleno,A. Berche,J. -C. Crivello,A. Diack Rasselio,P. Jund###
(80961, 80967)
On the structure and electronic properties of Fe2V0.8W0.2Al thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.2,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 6, 'at', 1],[25.0, 380, 'K', 1],[225.0, 0, 'K', 5],[240.0, 400, 'K', 5],[244.0, 30, 'microV', 5],[300.0, 6, 'in', 6]

Fe2V0.8W0.2Al
###On the structure and electronic properties of Fe$_2$V$_{0.8}$W$_{0.2}$Al thin films|E. Alleno,A. Berche,J. -C. Crivello,A. Diack Rasselio,P. Jund###
(81005, 81011)
 A very large thermoelectric figure of merit ZT  6 at 380 K has recently beenreported in Fe2V0.8W0.2Al under thin-film form (Hinterleitner etal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.2,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 6, 'at', 0],[13.0, 380, 'K', 0],[181.0, 0, 'K', 4],[196.0, 400, 'K', 4],[200.0, 30, 'microV', 4],[256.0, 6, 'in', 5]

Fe2V0.8W0.2Al
###On the structure and electronic properties of Fe$_2$V$_{0.8}$W$_{0.2}$Al thin films|E. Alleno,A. Berche,J. -C. Crivello,A. Diack Rasselio,P. Jund###
(81050, 81056)
 Under this form, Fe2V0.8W0.2Alexperimentally crystallizes in a disordered A2 crystal structure, differentfrom its bulk-form structure (L<missing VAR>21).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.2,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 6, 'at', 2],[58.0, 380, 'K', 2],[136.0, 0, 'K', 2],[151.0, 400, 'K', 2],[155.0, 30, 'microV', 2],[211.0, 6, 'in', 3]

Fe2V0.8W0.2Al
###On the structure and electronic properties of Fe$_2$V$_{0.8}$W$_{0.2}$Al thin films|E. Alleno,A. Berche,J. -C. Crivello,A. Diack Rasselio,P. Jund###
(81118, 81124)
 First principles calculations of theelectronic structure performed in A2-Fe2V0.8W0.2Al supercellsgenerated by the Special Quasi-random Structure (SQ<missing VAR>S) method are thus reportedhere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.2,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 6, 'at', 3],[126.0, 380, 'K', 3],[68.0, 0, 'K', 1],[83.0, 400, 'K', 1],[87.0, 30, 'microV', 1],[143.0, 6, 'in', 2]

S
###On the structure and electronic properties of Fe$_2$V$_{0.8}$W$_{0.2}$Al thin films|E. Alleno,A. Berche,J. -C. Crivello,A. Diack Rasselio,P. Jund###
(81144, 81144)
 First principles calculations of theelectronic structure performed in A2-Fe2V0.8W0.2Al supercellsgenerated by the Special Quasi-random Structure (SQ<missing VAR>S) method are thus reportedhere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 6, 'at', 3],[152.0, 380, 'K', 3],[48.0, 0, 'K', 1],[63.0, 400, 'K', 1],[67.0, 30, 'microV', 1],[123.0, 6, 'in', 2]

S
###On the structure and electronic properties of Fe$_2$V$_{0.8}$W$_{0.2}$Al thin films|E. Alleno,A. Berche,J. -C. Crivello,A. Diack Rasselio,P. Jund###
(81146, 81146)
 First principles calculations of theelectronic structure performed in A2-Fe2V0.8W0.2Al supercellsgenerated by the Special Quasi-random Structure (SQ<missing VAR>S) method are thus reportedhere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 6, 'at', 3],[154.0, 380, 'K', 3],[46.0, 0, 'K', 1],[61.0, 400, 'K', 1],[65.0, 30, 'microV', 1],[121.0, 6, 'in', 2]

Fe2V0.8W0.2Al
###On the structure and electronic properties of Fe$_2$V$_{0.8}$W$_{0.2}$Al thin films|E. Alleno,A. Berche,J. -C. Crivello,A. Diack Rasselio,P. Jund###
(81175, 81181)
 These calculations unambiguously indicate thatA2-Fe2V0.8W0.2Al is a ferromagnetic metal at 0 K, displaying asmall Seebeck coefficient at 400 K (< 30 microV/K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.2,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 6, 'at', 4],[183.0, 380, 'K', 4],[11.0, 0, 'K', 0],[26.0, 400, 'K', 0],[30.0, 30, 'microV', 0],[86.0, 6, 'in', 1]

K
###On the structure and electronic properties of Fe$_2$V$_{0.8}$W$_{0.2}$Al thin films|E. Alleno,A. Berche,J. -C. Crivello,A. Diack Rasselio,P. Jund###
(81213, 81213)
 These calculations unambiguously indicate thatA2-Fe2V0.8W0.2Al is a ferromagnetic metal at 0 K, displaying asmall Seebeck coefficient at 400 K (< 30 microV/K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 6, 'at', 4],[221.0, 380, 'K', 4],[21.0, 0, 'K', 0],[6.0, 400, 'K', 0],[2.0, 30, 'microV', 0],[54.0, 6, 'in', 1]

Fe2V0.8W0.2Al
###On the structure and electronic properties of Fe$_2$V$_{0.8}$W$_{0.2}$Al thin films|E. Alleno,A. Berche,J. -C. Crivello,A. Diack Rasselio,P. Jund###
(81269, 81275)
 The present resultscontradict the scenario of the occurrence of a deep pseudo-gap at the Fermilevel, previously invoked to justify ZT  6 in Fe2V0.8W0.2Al thinfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.2,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 6, 'at', 5],[277.0, 380, 'K', 5],[77.0, 0, 'K', 1],[62.0, 400, 'K', 1],[58.0, 30, 'microV', 1],[2.0, 6, 'in', 0]

SnTe
###Thermal conductivity and enhanced thermoelectric performance of SnTe bilayer|Abhiyan Pandit,Raad Haleoot,Bothina Hamad###
(81305, 81306)
Thermal conductivity and enhanced thermoelectric performance of SnTe bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, 'D', 3]

SnS
###Thermal conductivity and enhanced thermoelectric performance of SnTe bilayer|Abhiyan Pandit,Raad Haleoot,Bothina Hamad###
(81316, 81317)
 Tin chalcogenides (SnS, SnSe, and SnTe) are found to have improvedthermoelectric properties upon the reduction of their dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 2, 'D', 2]

SnSe
###Thermal conductivity and enhanced thermoelectric performance of SnTe bilayer|Abhiyan Pandit,Raad Haleoot,Bothina Hamad###
(81320, 81321)
 Tin chalcogenides (SnS, SnSe, and SnTe) are found to have improvedthermoelectric properties upon the reduction of their dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2, 'D', 2]

Te
###Thermal conductivity and enhanced thermoelectric performance of SnTe bilayer|Abhiyan Pandit,Raad Haleoot,Bothina Hamad###
(81327, 81327)
 Tin chalcogenides (SnS, SnSe, and SnTe) are found to have improvedthermoelectric properties upon the reduction of their dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 2, 'D', 2]

SnTe
###Thermal conductivity and enhanced thermoelectric performance of SnTe bilayer|Abhiyan Pandit,Raad Haleoot,Bothina Hamad###
(81387, 81388)
 Here wefound the tilted AA + s<missing VAR> stacked two-dimensional (2D) SnTe bilayer as the moststable phase among several stackings as predicted by the structuraloptimization and phonon transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2, 'D', 1]

SnTe
###Thermal conductivity and enhanced thermoelectric performance of SnTe bilayer|Abhiyan Pandit,Raad Haleoot,Bothina Hamad###
(81509, 81510)
 The SnTe bilayer shows ahigh Seebeck coefficient, high electrical conductivity, and ultralow latticethermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'D', 1]

SnTe
###Thermal conductivity and enhanced thermoelectric performance of SnTe bilayer|Abhiyan Pandit,Raad Haleoot,Bothina Hamad###
(81590, 81591)
 High TE figure of merit (ZT) values, as high as 4.61along the zigzag direction, are predicted for the SnTe bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, 'D', 2]

SnTe
###Thermal conductivity and enhanced thermoelectric performance of SnTe bilayer|Abhiyan Pandit,Raad Haleoot,Bothina Hamad###
(81628, 81629)
 These ZT valuesare much enhanced as compared to the bulk as well as monolayer SnTe and other2D<missing VAR> compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, 'D', 3]

K
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(81680, 81680)
A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 2, 'DEG', 6]

PbSeTe
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(81819, 81821)
 A sharp increase in zTup to 2.0 was observed previously for superlattice materials such as PbSeTe,Bi2Te3/Sb2Te3 and SrNb0.2Ti0.8O3/SrTiO3, when the thicknesses of these TEmaterials were spatially confine within sub-nanometre scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2, 'DEG', 3]

Bi2Te3/Sb2Te3
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(81825, 81833)
 A sharp increase in zTup to 2.0 was observed previously for superlattice materials such as PbSeTe,Bi2Te3/Sb2Te3 and SrNb0.2Ti0.8O3/SrTiO3, when the thicknesses of these TEmaterials were spatially confine within sub-nanometre scale.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[160.0, 2, 'DEG', 3]

SrNb0.2Ti0.8O3/SrTiO3
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(81837, 81848)
 A sharp increase in zTup to 2.0 was observed previously for superlattice materials such as PbSeTe,Bi2Te3/Sb2Te3 and SrNb0.2Ti0.8O3/SrTiO3, when the thicknesses of these TEmaterials were spatially confine within sub-nanometre scale.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[145.0, 2, 'DEG', 3]

S
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(81939, 81939)
 This overcomes theconventional sigma-S trade-off to more independently improve S, and therebyfurther increases thermoelectric power factors (PFS2sigma).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'DEG', 1]

S
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(81953, 81953)
 This overcomes theconventional sigma-S trade-off to more independently improve S, and therebyfurther increases thermoelectric power factors (PFS2sigma).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2, 'DEG', 1]

PFS2
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(81972, 81975)
 This overcomes theconventional sigma-S trade-off to more independently improve S, and therebyfurther increases thermoelectric power factors (PFS2sigma).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'DEG', 1]

SrNb0.2Ti0.8O3
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(82072, 82078)
 Here, we report similar TE properties to2DEGs but achieved in SrNb0.2Ti0.8O3 films with thickness within sub-micrometerscale by regulating interfacial and lattice polarizations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2, 'DEG', 1]

K
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(82126, 82126)
 High power factor(up to 103 muWcm-1K-2) and zT value (up to 1.6) were observed for the filmmaterials near room-temperature and below.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 2, 'DEG', 2]

K
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(82219, 82219)
 Even reckon in the thickness of thesubstrate, an integrated power factor of both film and substrate approaching tobe 102 muWcm-1K-2 was achieved in a 2 mum<missing VAR>-thick SrNb0.2Ti0.8O3 film grownon a 100 mum<missing VAR>-thick SrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 2, 'DEG', 3]

SrNb0.2Ti0.8O3
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(82238, 82244)
 Even reckon in the thickness of thesubstrate, an integrated power factor of both film and substrate approaching tobe 102 muWcm-1K-2 was achieved in a 2 mum<missing VAR>-thick SrNb0.2Ti0.8O3 film grownon a 100 mum<missing VAR>-thick SrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 2, 'DEG', 3]

SrTiO3
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(82262, 82265)
 Even reckon in the thickness of thesubstrate, an integrated power factor of both film and substrate approaching tobe 102 muWcm-1K-2 was achieved in a 2 mum<missing VAR>-thick SrNb0.2Ti0.8O3 film grownon a 100 mum<missing VAR>-thick SrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 2, 'DEG', 3]

As
###A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K|Jikun Chen,Hongyi Chen,Feng Hao,Xinyou Ke,Nuofu Chen,Takeaki Yajima,Yong Jiang,Xun Shi,Kexiong Zhou,Max Döbeli,Tiansong Zhang,Binghui Ge,Hongliang Dong,Huarong Zeng Wenwang Wu,Lidong Chen###
(82320, 82320)
 As-grown oxide films are less toxic and notdependent on large amounts of heavy elements, potentially paving the waytowards applications in localised refrigeration and electric power generations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 2, 'DEG', 5]

TiS2
###Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition|H. Imai,Y. Shimakawa,Y. Kubo###
(82400, 82402)
Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 300, 'K', 2],[87.0, 1.7, 'm', 2],[283.0, 0.16, 'at', 5],[284.0, 300, 'K', 5]

TiS2
###Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition|H. Imai,Y. Shimakawa,Y. Kubo###
(82417, 82419)
 A TiS2 crystal with a layered structure was found to have a largethermoelectric power factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 300, 'K', 1],[70.0, 1.7, 'm', 1],[266.0, 0.16, 'at', 4],[267.0, 300, 'K', 4]

S2
###Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition|H. Imai,Y. Shimakawa,Y. Kubo###
(82460, 82461)
The in-plane power factor S2/ rho at 300 K is37.1muW/K2cm with resistivity (rho) of 1.7 mOmegacm andthermopower (S) of -251muV/K, and this value is comparable to that of thebest thermoelectric material, Bi2Te3 alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 300, 'K', 0],[28.0, 1.7, 'm', 0],[224.0, 0.16, 'at', 3],[225.0, 300, 'K', 3]

W/K2
###Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition|H. Imai,Y. Shimakawa,Y. Kubo###
(82474, 82477)
The in-plane power factor S2/ rho at 300 K is37.1muW/K2cm with resistivity (rho) of 1.7 mOmegacm andthermopower (S) of -251muV/K, and this value is comparable to that of thebest thermoelectric material, Bi2Te3 alloy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[7.0, 300, 'K', 0],[12.0, 1.7, 'm', 0],[208.0, 0.16, 'at', 3],[209.0, 300, 'K', 3]

(S)
###Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition|H. Imai,Y. Shimakawa,Y. Kubo###
(82498, 82500)
The in-plane power factor S2/ rho at 300 K is37.1muW/K2cm with resistivity (rho) of 1.7 mOmegacm andthermopower (S) of -251muV/K, and this value is comparable to that of thebest thermoelectric material, Bi2Te3 alloy.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 300, 'K', 0],[9.0, 1.7, 'm', 0],[185.0, 0.16, 'at', 3],[186.0, 300, 'K', 3]

V/K
###Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition|H. Imai,Y. Shimakawa,Y. Kubo###
(82507, 82509)
The in-plane power factor S2/ rho at 300 K is37.1muW/K2cm with resistivity (rho) of 1.7 mOmegacm andthermopower (S) of -251muV/K, and this value is comparable to that of thebest thermoelectric material, Bi2Te3 alloy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[40.0, 300, 'K', 0],[18.0, 1.7, 'm', 0],[176.0, 0.16, 'at', 3],[177.0, 300, 'K', 3]

Bi2Te3
###Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition|H. Imai,Y. Shimakawa,Y. Kubo###
(82538, 82541)
The in-plane power factor S2/ rho at 300 K is37.1muW/K2cm with resistivity (rho) of 1.7 mOmegacm andthermopower (S) of -251muV/K, and this value is comparable to that of thebest thermoelectric material, Bi2Te3 alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 300, 'K', 0],[49.0, 1.7, 'm', 0],[144.0, 0.16, 'at', 3],[145.0, 300, 'K', 3]

TiS2
###Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition|H. Imai,Y. Shimakawa,Y. Kubo###
(82583, 82585)
 The electricalresistivity shows both metallic and highly anisotropic behaviors, suggestingthat the electronic structure of this TiS2 crystal has aquasi-two-dimensional nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 300, 'K', 1],[94.0, 1.7, 'm', 1],[100.0, 0.16, 'at', 2],[101.0, 300, 'K', 2]

In
###Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition|H. Imai,Y. Shimakawa,Y. Kubo###
(82650, 82650)
 In spite of the large power factor, the figure of merit, ZT ofTiS2 is 0.16 at 300 K, because of relatively large thermal conductivity,68m<missing VAR>W/Kcm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 300, 'K', 3],[161.0, 1.7, 'm', 3],[35.0, 0.16, 'at', 0],[36.0, 300, 'K', 0]

TiS2
###Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition|H. Imai,Y. Shimakawa,Y. Kubo###
(82680, 82682)
 In spite of the large power factor, the figure of merit, ZT ofTiS2 is 0.16 at 300 K, because of relatively large thermal conductivity,68m<missing VAR>W/Kcm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 300, 'K', 3],[191.0, 1.7, 'm', 3],[3.0, 0.16, 'at', 0],[4.0, 300, 'K', 0]

W
###Large Thermoelectric Power Factor in TiS2 Crystal with Nearly Stoichiometric Composition|H. Imai,Y. Shimakawa,Y. Kubo###
(82705, 82705)
 In spite of the large power factor, the figure of merit, ZT ofTiS2 is 0.16 at 300 K, because of relatively large thermal conductivity,68m<missing VAR>W/Kcm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 300, 'K', 3],[216.0, 1.7, 'm', 3],[20.0, 0.16, 'at', 0],[19.0, 300, 'K', 0]

In
###Do Thermoelectric Materials in Nanojunctions Display Material Property or Junction Property?|Yu-Chang Chen,Yu-Shen Liu###
(82876, 82876)
 In order to answer this question, we investigate the Seebeckcoefficient S and the thermoelectric figure of merit ZT especially inrelation to the length characteristics of the junctions from thefirst-principles approaches.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 0, ',', 4],[294.0, 0, ',', 5]

S
###Do Thermoelectric Materials in Nanojunctions Display Material Property or Junction Property?|Yu-Chang Chen,Yu-Shen Liu###
(82900, 82900)
 In order to answer this question, we investigate the Seebeckcoefficient S and the thermoelectric figure of merit ZT especially inrelation to the length characteristics of the junctions from thefirst-principles approaches.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 0, ',', 4],[270.0, 0, ',', 5]

S
###Do Thermoelectric Materials in Nanojunctions Display Material Property or Junction Property?|Yu-Chang Chen,Yu-Shen Liu###
(82952, 82952)
 For S, the metallic atomic chains reveal stronglength characteristics related to strong hybridization in the electronicstructures between the atoms and electrodes, while the insulating molecularwires display strong material properties due to the cancelation of exponentialscalings in the D<missing VAR>OSs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0, ',', 3],[218.0, 0, ',', 4]

O
###Do Thermoelectric Materials in Nanojunctions Display Material Property or Junction Property?|Yu-Chang Chen,Yu-Shen Liu###
(83039, 83039)
 For S, the metallic atomic chains reveal stronglength characteristics related to strong hybridization in the electronicstructures between the atoms and electrodes, while the insulating molecularwires display strong material properties due to the cancelation of exponentialscalings in the D<missing VAR>OSs.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0, ',', 3],[131.0, 0, ',', 4]

K
###Do Thermoelectric Materials in Nanojunctions Display Material Property or Junction Property?|Yu-Chang Chen,Yu-Shen Liu###
(83114, 83114)
 However, the length chrematistics of the insulation molecular wiresdepend on a characteristic temperature T<missing VAR>0 sqrtbeta/gamma(l) around10K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0, ',', 1],[56.0, 0, ',', 2]

In
###Thermoelectric properties of electrically gated bismuth telluride nanowires|Igor Bejenari,Valeriu Kantser,Alexander A. Balandin###
(83419, 83419)
 In the temperature rangefrom 77 to 500 K, the dependences of the Seebeck coefficient, thermalconductivity, electron (hole) concentration, and thermoelectric figure of meriton the nanowire thickness, gate voltage, and excess hole (electron)concentration were investigated in the constant relaxation-time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 77, 'to', 0],[11.0, 500, 'K', 0],[153.0, 15, 'nm', 1],[164.0, 2, 'and', 1]

At
###Thermoelectric properties of electrically gated bismuth telluride nanowires|Igor Bejenari,Valeriu Kantser,Alexander A. Balandin###
(83602, 83602)
 At room temperature, ZT can reach a value as high as3.4 under the action of the external perpendicular electric field for realisticwidths of the nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 77, 'to', 2],[172.0, 500, 'K', 2],[30.0, 15, 'nm', 1],[19.0, 2, 'and', 1]

Si
###Thermoelectric transport in strained Si and Si/Ge heterostructures|N. F. Hinsche,I. Mertig,P. Zahn###
(83730, 83730)
Thermoelectric transport in strained Si and Si/Ge heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/Ge
###Thermoelectric transport in strained Si and Si/Ge heterostructures|N. F. Hinsche,I. Mertig,P. Zahn###
(83734, 83736)
Thermoelectric transport in strained Si and Si/Ge heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

At
###Thermoelectric transport in strained Si and Si/Ge heterostructures|N. F. Hinsche,I. Mertig,P. Zahn###
(83834, 83834)
 At lowtemperature and low doping an enhancement of the power factor was obtained forcompressive and tensile strain in the electron-doped case and for compressivestrain in the hole-doped case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/Ge
###Thermoelectric transport in strained Si and Si/Ge heterostructures|N. F. Hinsche,I. Mertig,P. Zahn###
(84005, 84007)
 To extend our findings the anisotropicthermoelectric transport of an [111]-oriented Si/Ge superlattice wasinvestigated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

K
###Thermoelectric transport in strained Si and Si/Ge heterostructures|N. F. Hinsche,I. Mertig,P. Zahn###
(84113, 84113)
 With that, we state a figure of merit ofZT0.2 and ZT1.4 at T<missing VAR>unit[300]K and T<missing VAR>unit[900]K for theelectron-doped [111]-oriented Si/Ge superlattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Thermoelectric transport in strained Si and Si/Ge heterostructures|N. F. Hinsche,I. Mertig,P. Zahn###
(84122, 84122)
 With that, we state a figure of merit ofZT0.2 and ZT1.4 at T<missing VAR>unit[300]K and T<missing VAR>unit[900]K for theelectron-doped [111]-oriented Si/Ge superlattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/Ge
###Thermoelectric transport in strained Si and Si/Ge heterostructures|N. F. Hinsche,I. Mertig,P. Zahn###
(84139, 84141)
 With that, we state a figure of merit ofZT0.2 and ZT1.4 at T<missing VAR>unit[300]K and T<missing VAR>unit[900]K for theelectron-doped [111]-oriented Si/Ge superlattice.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ca
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84184, 84184)
Enhanced thermoelectric performance in Ca substituted Sr3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 45, '%', 1],[433.0, 300, 'K', 10],[436.0, 2.33, 'and', 10],[437.0, 1.897, 'W', 10],[520.0, 0.6, 'and', 11]

Sr3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84188, 84191)
Enhanced thermoelectric performance in Ca substituted Sr3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 45, '%', 1],[426.0, 300, 'K', 10],[429.0, 2.33, 'and', 10],[430.0, 1.897, 'W', 10],[513.0, 0.6, 'and', 11]

Sr3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84221, 84224)
 We report 45% enhancement in the thermoelectric figure of merit, ZT of Sr3SnOvia Ca substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 45, '%', 0],[393.0, 300, 'K', 9],[396.0, 2.33, 'and', 9],[397.0, 1.897, 'W', 9],[480.0, 0.6, 'and', 10]

Ca
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84229, 84229)
 We report 45% enhancement in the thermoelectric figure of merit, ZT of Sr3SnOvia Ca substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 45, '%', 0],[388.0, 300, 'K', 9],[391.0, 2.33, 'and', 9],[392.0, 1.897, 'W', 9],[475.0, 0.6, 'and', 10]

Ca
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84265, 84265)
 First-principles calculations have been performed to studythe electronic and thermoelectric transport properties of Ca substituted Sr3SnO(Sr3-xCaxSnO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 45, '%', 1],[352.0, 300, 'K', 8],[355.0, 2.33, 'and', 8],[356.0, 1.897, 'W', 8],[439.0, 0.6, 'and', 9]

Sr3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84269, 84272)
 First-principles calculations have been performed to studythe electronic and thermoelectric transport properties of Ca substituted Sr3SnO(Sr3-xCaxSnO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 45, '%', 1],[345.0, 300, 'K', 8],[348.0, 2.33, 'and', 8],[349.0, 1.897, 'W', 8],[432.0, 0.6, 'and', 9]

Sr3-x
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84276, 84279)
 First-principles calculations have been performed to studythe electronic and thermoelectric transport properties of Ca substituted Sr3SnO(Sr3-xCaxSnO).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[78.0, 45, '%', 1],[338.0, 300, 'K', 8],[341.0, 2.33, 'and', 8],[342.0, 1.897, 'W', 8],[425.0, 0.6, 'and', 9]

O
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84282, 84282)
 First-principles calculations have been performed to studythe electronic and thermoelectric transport properties of Ca substituted Sr3SnO(Sr3-xCaxSnO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 45, '%', 1],[335.0, 300, 'K', 8],[338.0, 2.33, 'and', 8],[339.0, 1.897, 'W', 8],[422.0, 0.6, 'and', 9]

Ca
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84292, 84292)
 The effects of Ca subtitution on bandgap are studied anddetailed mechanisms are proposed to explain the obtained results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 45, '%', 2],[325.0, 300, 'K', 7],[328.0, 2.33, 'and', 7],[329.0, 1.897, 'W', 7],[412.0, 0.6, 'and', 8]

Sr3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84345, 84348)
 We have foundthat effective mass and thermopower of Sr3SnO redueces with the increase ofhole concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 45, '%', 3],[269.0, 300, 'K', 6],[272.0, 2.33, 'and', 6],[273.0, 1.897, 'W', 6],[356.0, 0.6, 'and', 7]

Sr2CaSnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84383, 84387)
 The optimum hole concentration has been obtained forSr2CaSnO and the corresponding Seebeck coefficient is 219 muV/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 45, '%', 4],[230.0, 300, 'K', 5],[233.0, 2.33, 'and', 5],[234.0, 1.897, 'W', 5],[317.0, 0.6, 'and', 6]

V/K
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84404, 84406)
 The optimum hole concentration has been obtained forSr2CaSnO and the corresponding Seebeck coefficient is 219 muV/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[206.0, 45, '%', 4],[211.0, 300, 'K', 5],[214.0, 2.33, 'and', 5],[215.0, 1.897, 'W', 5],[298.0, 0.6, 'and', 6]

Sr3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84418, 84421)
 Theelectrical conductivity of Sr3SnO and its alloys exhibits semiconducting naturewhich contradicts with experimental results in Ca3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 45, '%', 5],[196.0, 300, 'K', 4],[199.0, 2.33, 'and', 4],[200.0, 1.897, 'W', 4],[283.0, 0.6, 'and', 5]

Ca3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84448, 84451)
 Theelectrical conductivity of Sr3SnO and its alloys exhibits semiconducting naturewhich contradicts with experimental results in Ca3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 45, '%', 5],[166.0, 300, 'K', 4],[169.0, 2.33, 'and', 4],[170.0, 1.897, 'W', 4],[253.0, 0.6, 'and', 5]

Ca
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84469, 84469)
 We have found that dueto the Ca-deficiency, the Ca3SnO shows the metallic conductivity and removesthis contradiction with our results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 45, '%', 6],[148.0, 300, 'K', 3],[151.0, 2.33, 'and', 3],[152.0, 1.897, 'W', 3],[235.0, 0.6, 'and', 4]

Ca3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84476, 84479)
 We have found that dueto the Ca-deficiency, the Ca3SnO shows the metallic conductivity and removesthis contradiction with our results.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 45, '%', 6],[138.0, 300, 'K', 3],[141.0, 2.33, 'and', 3],[142.0, 1.897, 'W', 3],[225.0, 0.6, 'and', 4]

Sr3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84520, 84523)
 The lattice thermal conductivities (kl)of Sr3SnO and Ca3SnO have been calculated by using both PBE<missing VAR> and G<missing VAR>W functionals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 45, '%', 7],[94.0, 300, 'K', 2],[97.0, 2.33, 'and', 2],[98.0, 1.897, 'W', 2],[181.0, 0.6, 'and', 3]

Ca3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84527, 84530)
 The lattice thermal conductivities (kl)of Sr3SnO and Ca3SnO have been calculated by using both PBE<missing VAR> and G<missing VAR>W functionals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 45, '%', 7],[87.0, 300, 'K', 2],[90.0, 2.33, 'and', 2],[91.0, 1.897, 'W', 2],[174.0, 0.6, 'and', 3]

PB
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84544, 84545)
 The lattice thermal conductivities (kl)of Sr3SnO and Ca3SnO have been calculated by using both PBE<missing VAR> and G<missing VAR>W functionals.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 45, '%', 7],[72.0, 300, 'K', 2],[75.0, 2.33, 'and', 2],[76.0, 1.897, 'W', 2],[159.0, 0.6, 'and', 3]

W
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84551, 84551)
 The lattice thermal conductivities (kl)of Sr3SnO and Ca3SnO have been calculated by using both PBE<missing VAR> and G<missing VAR>W functionals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 45, '%', 7],[66.0, 300, 'K', 2],[69.0, 2.33, 'and', 2],[70.0, 1.897, 'W', 2],[153.0, 0.6, 'and', 3]

PB
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84569, 84570)
The lattice thermal conductivity obtained by PBE<missing VAR> functional largelyunderestimates the experimental value for Ca3SnO.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 45, '%', 8],[47.0, 300, 'K', 1],[50.0, 2.33, 'and', 1],[51.0, 1.897, 'W', 1],[134.0, 0.6, 'and', 2]

Ca3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84588, 84591)
The lattice thermal conductivity obtained by PBE<missing VAR> functional largelyunderestimates the experimental value for Ca3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 45, '%', 8],[26.0, 300, 'K', 1],[29.0, 2.33, 'and', 1],[30.0, 1.897, 'W', 1],[113.0, 0.6, 'and', 2]

W
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84613, 84613)
 The total thermalconductivity (with kl obtained by G<missing VAR>W) at 300K is 2.33 and 1.897 W/m<missing VAR>K for Sr3SnOand Ca3SnO, respectively, with excellent agreement with experimental value1.707 W/m<missing VAR>K for Ca3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[415.0, 45, '%', 9],[4.0, 300, 'K', 0],[7.0, 2.33, 'and', 0],[8.0, 1.897, 'W', 0],[91.0, 0.6, 'and', 1]

K
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84624, 84624)
 The total thermalconductivity (with kl obtained by G<missing VAR>W) at 300K is 2.33 and 1.897 W/m<missing VAR>K for Sr3SnOand Ca3SnO, respectively, with excellent agreement with experimental value1.707 W/m<missing VAR>K for Ca3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 45, '%', 9],[7.0, 300, 'K', 0],[4.0, 2.33, 'and', 0],[3.0, 1.897, 'W', 0],[80.0, 0.6, 'and', 1]

Sr3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84628, 84631)
 The total thermalconductivity (with kl obtained by G<missing VAR>W) at 300K is 2.33 and 1.897 W/m<missing VAR>K for Sr3SnOand Ca3SnO, respectively, with excellent agreement with experimental value1.707 W/m<missing VAR>K for Ca3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[430.0, 45, '%', 9],[11.0, 300, 'K', 0],[8.0, 2.33, 'and', 0],[7.0, 1.897, 'W', 0],[73.0, 0.6, 'and', 1]

Ca3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84636, 84639)
 The total thermalconductivity (with kl obtained by G<missing VAR>W) at 300K is 2.33 and 1.897 W/m<missing VAR>K for Sr3SnOand Ca3SnO, respectively, with excellent agreement with experimental value1.707 W/m<missing VAR>K for Ca3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 45, '%', 9],[19.0, 300, 'K', 0],[16.0, 2.33, 'and', 0],[15.0, 1.897, 'W', 0],[65.0, 0.6, 'and', 1]

W
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84660, 84660)
 The total thermalconductivity (with kl obtained by G<missing VAR>W) at 300K is 2.33 and 1.897 W/m<missing VAR>K for Sr3SnOand Ca3SnO, respectively, with excellent agreement with experimental value1.707 W/m<missing VAR>K for Ca3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[462.0, 45, '%', 9],[43.0, 300, 'K', 0],[40.0, 2.33, 'and', 0],[39.0, 1.897, 'W', 0],[44.0, 0.6, 'and', 1]

K
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84663, 84663)
 The total thermalconductivity (with kl obtained by G<missing VAR>W) at 300K is 2.33 and 1.897 W/m<missing VAR>K for Sr3SnOand Ca3SnO, respectively, with excellent agreement with experimental value1.707 W/m<missing VAR>K for Ca3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[465.0, 45, '%', 9],[46.0, 300, 'K', 0],[43.0, 2.33, 'and', 0],[42.0, 1.897, 'W', 0],[41.0, 0.6, 'and', 1]

Ca3SnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84667, 84670)
 The total thermalconductivity (with kl obtained by G<missing VAR>W) at 300K is 2.33 and 1.897 W/m<missing VAR>K for Sr3SnOand Ca3SnO, respectively, with excellent agreement with experimental value1.707 W/m<missing VAR>K for Ca3SnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[469.0, 45, '%', 9],[50.0, 300, 'K', 0],[47.0, 2.33, 'and', 0],[46.0, 1.897, 'W', 0],[34.0, 0.6, 'and', 1]

Sr2CaSnO
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84690, 84694)
 The dimensionless figure of merit (ZT) for Sr2CaSnO at500 K is 0.6 and making it promising for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[492.0, 45, '%', 10],[73.0, 300, 'K', 1],[70.0, 2.33, 'and', 1],[69.0, 1.897, 'W', 1],[10.0, 0.6, 'and', 0]

K
###Enhanced thermoelectric performance in Ca substituted Sr3SnO|Enamul Haque,M. Anwar Hossain###
(84701, 84701)
 The dimensionless figure of merit (ZT) for Sr2CaSnO at500 K is 0.6 and making it promising for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[503.0, 45, '%', 10],[84.0, 300, 'K', 1],[81.0, 2.33, 'and', 1],[80.0, 1.897, 'W', 1],[3.0, 0.6, 'and', 0]

Si
###Extreme Low Thermal Conductivity in Nanoscale 3D Si Phononic Crystal with Spherical Pores|Lina Yang,Nuo Yang,Baowen Li###
(84740, 84740)
Extreme Low Thermal Conductivity in Nanoscale 3D Si Phononic Crystal with Spherical Pores.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 3, 'D', 0],[275.0, 10, ',', 6],[345.0, 1100, 'K', 8]

Si
###Extreme Low Thermal Conductivity in Nanoscale 3D Si Phononic Crystal with Spherical Pores|Lina Yang,Nuo Yang,Baowen Li###
(84967, 84967)
1 Here, we propose a novelnanoscale three-dimensional (3D) Si phononic crystal (PnC) with sphericalpores, which can reduce the thermal conductivity of bulk Si by a factor up to10,000 times at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 3, 'D', 6],[48.0, 10, ',', 0],[118.0, 1100, 'K', 2]

C
###Extreme Low Thermal Conductivity in Nanoscale 3D Si Phononic Crystal with Spherical Pores|Lina Yang,Nuo Yang,Baowen Li###
(84975, 84975)
1 Here, we propose a novelnanoscale three-dimensional (3D) Si phononic crystal (PnC) with sphericalpores, which can reduce the thermal conductivity of bulk Si by a factor up to10,000 times at room temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 3, 'D', 6],[40.0, 10, ',', 0],[110.0, 1100, 'K', 2]

Si
###Extreme Low Thermal Conductivity in Nanoscale 3D Si Phononic Crystal with Spherical Pores|Lina Yang,Nuo Yang,Baowen Li###
(85002, 85002)
1 Here, we propose a novelnanoscale three-dimensional (3D) Si phononic crystal (PnC) with sphericalpores, which can reduce the thermal conductivity of bulk Si by a factor up to10,000 times at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 3, 'D', 6],[13.0, 10, ',', 0],[83.0, 1100, 'K', 2]

C
###Extreme Low Thermal Conductivity in Nanoscale 3D Si Phononic Crystal with Spherical Pores|Lina Yang,Nuo Yang,Baowen Li###
(85121, 85121)
 The phononparticipation ratio spectra show there are more phonon localizations as theporosity of PnC increases.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 3, 'D', 9],[106.0, 10, ',', 3],[36.0, 1100, 'K', 1]

Cs2[PdCl4]I2
###Potential thermoelectric material $\mathrm{Cs_2[PdCl_4]I_2}$: a first-principles study|San-Dong Guo###
(85141, 85149)
Potential thermoelectric material mathrmCs2[PdCl4]I2 a first-principles study.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Cs2(PdCl4)I2
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4444444444444444,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0.2222222222222222,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 0.7, 'and', 8],[389.0, 0.6, 'with', 8]

Cs2[PdCl4]I2
###Potential thermoelectric material $\mathrm{Cs_2[PdCl_4]I_2}$: a first-principles study|San-Dong Guo###
(85176, 85184)
 The electronic structures and thermoelectric properties ofmathrmCs2[PdCl4]I2 are investigated by the first-principlescalculations and semiclassical Boltzmann transport theory.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Cs2(PdCl4)I2
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4444444444444444,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0.2222222222222222,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 0.7, 'and', 7],[354.0, 0.6, 'with', 7]

(SOC)
###Potential thermoelectric material $\mathrm{Cs_2[PdCl_4]I_2}$: a first-principles study|San-Dong Guo###
(85274, 85278)
 A modifiedBecke and Johnson (mBJ) exchange potential, including spin-orbit coupling(SOC), is employed to investigate electronic part ofmathrmCs2[PdCl4]I2.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 0.7, 'and', 5],[260.0, 0.6, 'with', 5]

Cs2[PdCl4]I2
###Potential thermoelectric material $\mathrm{Cs_2[PdCl_4]I_2}$: a first-principles study|San-Dong Guo###
(85297, 85305)
 A modifiedBecke and Johnson (mBJ) exchange potential, including spin-orbit coupling(SOC), is employed to investigate electronic part ofmathrmCs2[PdCl4]I2.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Cs2(PdCl4)I2
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4444444444444444,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0.2222222222222222,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 0.7, 'and', 5],[233.0, 0.6, 'with', 5]

SOC
###Potential thermoelectric material $\mathrm{Cs_2[PdCl_4]I_2}$: a first-principles study|San-Dong Guo###
(85316, 85318)
 It is found that SOC has obvious effect on valencebands, producing huge spin-orbital splitting, which leads to remarkabledetrimental effect on p<missing VAR>-type power factor.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 0.7, 'and', 4],[220.0, 0.6, 'with', 4]

SOC
###Potential thermoelectric material $\mathrm{Cs_2[PdCl_4]I_2}$: a first-principles study|San-Dong Guo###
(85372, 85374)
 However, SOC has a negligibleinfluence on conduction bands, so the n<missing VAR>-type power factor hardly change.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0.7, 'and', 3],[164.0, 0.6, 'with', 3]

W
###Potential thermoelectric material $\mathrm{Cs_2[PdCl_4]I_2}$: a first-principles study|San-Dong Guo###
(85459, 85459)
 Thetemperature dependence of lattice thermal conductivity by assuming an inversetemperature dependence is attained from reported ultralow lattice thermalconductivity of 0.31 mathrmW m<missing VAR>-1 K-1 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 0.7, 'and', 2],[79.0, 0.6, 'with', 2]

K
###Potential thermoelectric material $\mathrm{Cs_2[PdCl_4]I_2}$: a first-principles study|San-Dong Guo###
(85465, 85465)
 Thetemperature dependence of lattice thermal conductivity by assuming an inversetemperature dependence is attained from reported ultralow lattice thermalconductivity of 0.31 mathrmW m<missing VAR>-1 K-1 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.7, 'and', 2],[73.0, 0.6, 'with', 2]

Cs2[PdCl4]I2
###Potential thermoelectric material $\mathrm{Cs_2[PdCl_4]I_2}$: a first-principles study|San-Dong Guo###
(85579, 85587)
 These results makeus believe that mathrmCs2[PdCl4]I2 may be a potential thermoelectricmaterial.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Cs2(PdCl4)I2
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4444444444444444,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0.2222222222222222,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.7, 'and', 1],[41.0, 0.6, 'with', 1]

ZrNiPb
###Thermoelectric properties of half-Heusler $\mathrm{ZrNiPb}$ by using first principles calculations|San-Dong Guo###
(85622, 85624)
Thermoelectric properties of half-Heusler mathrmZrNiPb by using first principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[406.0, 0.3, 'at', 8]

ZrNiPb
###Thermoelectric properties of half-Heusler $\mathrm{ZrNiPb}$ by using first principles calculations|San-Dong Guo###
(85663, 85665)
 We investigate electronic structures and thermoelectric properties of recentsynthetic half-Heusler mathrmZrNiPb by using generalized gradientapproximation (GGA) and GGA plus spin-orbit coupling (GGA+SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 0.3, 'at', 7]

C
###Thermoelectric properties of half-Heusler $\mathrm{ZrNiPb}$ by using first principles calculations|San-Dong Guo###
(85705, 85705)
 We investigate electronic structures and thermoelectric properties of recentsynthetic half-Heusler mathrmZrNiPb by using generalized gradientapproximation (GGA) and GGA plus spin-orbit coupling (GGA+SOC).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 0.3, 'at', 7]

ZrNiPb
###Thermoelectric properties of half-Heusler $\mathrm{ZrNiPb}$ by using first principles calculations|San-Dong Guo###
(85719, 85721)
 Calculatedresults show that mathrmZrNiPb is a indirect-gap semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 0.3, 'at', 6]

SOC
###Thermoelectric properties of half-Heusler $\mathrm{ZrNiPb}$ by using first principles calculations|San-Dong Guo###
(85783, 85785)
 It is found that theSOC has more obvious influence on power factor in p<missing VAR>-type doping than in n<missing VAR>-typedoping, leading to a detrimental effect in p<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 0.3, 'at', 4]

SOC
###Thermoelectric properties of half-Heusler $\mathrm{ZrNiPb}$ by using first principles calculations|San-Dong Guo###
(85855, 85857)
 These can beexplained by considering the SOC influences on the valence bands and conductionbands near the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 0.3, 'at', 3]

W
###Thermoelectric properties of half-Heusler $\mathrm{ZrNiPb}$ by using first principles calculations|San-Dong Guo###
(85927, 85927)
 The lattice thermal conductivity as a function oftemperature is calculated, and the corresponding lattice thermal conductivityis 14.5 mathrmW m<missing VAR>-1 K-1 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.3, 'at', 2]

K
###Thermoelectric properties of half-Heusler $\mathrm{ZrNiPb}$ by using first principles calculations|San-Dong Guo###
(85933, 85933)
 The lattice thermal conductivity as a function oftemperature is calculated, and the corresponding lattice thermal conductivityis 14.5 mathrmW m<missing VAR>-1 K-1 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.3, 'at', 2]

ZrNiPb
###Thermoelectric properties of half-Heusler $\mathrm{ZrNiPb}$ by using first principles calculations|San-Dong Guo###
(86086, 86088)
 It is possible to reducelattice thermal conductivity by point defects and boundaries, and makehalf-Heusler mathrmZrNiPb become potential candidate for efficientthermoelectricity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.3, 'at', 1]

TiCoSb
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86132, 86134)
Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.25, ',', 2],[120.0, 0.5, ',', 2],[243.0, 0.25, ',', 3],[245.0, 0.5, 'concentration', 3],[262.0, 0.75, 'concentration', 3],[283.0, 0.25, ',', 4],[286.0, 0.5, ',', 4]

TiCoSb
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86168, 86170)
 To understand the effect of isoelectronic substitution on thermoelectricproperties of TiCoSb based half - Heusler (HH) alloys, we have systematicallystudied the transport properties with substitution of Zr at Ti and Bi at Sbsites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.25, ',', 1],[84.0, 0.5, ',', 1],[207.0, 0.25, ',', 2],[209.0, 0.5, 'concentration', 2],[226.0, 0.75, 'concentration', 2],[247.0, 0.25, ',', 3],[250.0, 0.5, ',', 3]

(HH)
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86180, 86183)
 To understand the effect of isoelectronic substitution on thermoelectricproperties of TiCoSb based half - Heusler (HH) alloys, we have systematicallystudied the transport properties with substitution of Zr at Ti and Bi at Sbsites.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.25, ',', 1],[71.0, 0.5, ',', 1],[194.0, 0.25, ',', 2],[196.0, 0.5, 'concentration', 2],[213.0, 0.75, 'concentration', 2],[234.0, 0.25, ',', 3],[237.0, 0.5, ',', 3]

Zr
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86209, 86209)
 To understand the effect of isoelectronic substitution on thermoelectricproperties of TiCoSb based half - Heusler (HH) alloys, we have systematicallystudied the transport properties with substitution of Zr at Ti and Bi at Sbsites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.25, ',', 1],[45.0, 0.5, ',', 1],[168.0, 0.25, ',', 2],[170.0, 0.5, 'concentration', 2],[187.0, 0.75, 'concentration', 2],[208.0, 0.25, ',', 3],[211.0, 0.5, ',', 3]

Ti
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86213, 86213)
 To understand the effect of isoelectronic substitution on thermoelectricproperties of TiCoSb based half - Heusler (HH) alloys, we have systematicallystudied the transport properties with substitution of Zr at Ti and Bi at Sbsites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0.25, ',', 1],[41.0, 0.5, ',', 1],[164.0, 0.25, ',', 2],[166.0, 0.5, 'concentration', 2],[183.0, 0.75, 'concentration', 2],[204.0, 0.25, ',', 3],[207.0, 0.5, ',', 3]

Bi
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86217, 86217)
 To understand the effect of isoelectronic substitution on thermoelectricproperties of TiCoSb based half - Heusler (HH) alloys, we have systematicallystudied the transport properties with substitution of Zr at Ti and Bi at Sbsites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.25, ',', 1],[37.0, 0.5, ',', 1],[160.0, 0.25, ',', 2],[162.0, 0.5, 'concentration', 2],[179.0, 0.75, 'concentration', 2],[200.0, 0.25, ',', 3],[203.0, 0.5, ',', 3]

Sb
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86221, 86221)
 To understand the effect of isoelectronic substitution on thermoelectricproperties of TiCoSb based half - Heusler (HH) alloys, we have systematicallystudied the transport properties with substitution of Zr at Ti and Bi at Sbsites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0.25, ',', 1],[33.0, 0.5, ',', 1],[156.0, 0.25, ',', 2],[158.0, 0.5, 'concentration', 2],[175.0, 0.75, 'concentration', 2],[196.0, 0.25, ',', 3],[199.0, 0.5, ',', 3]

Zr1-xCo
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86236, 86240)
 The electronic structure of TixZr1-xCoSbxBi1-x (x<missing VAR>  0.25, 0.5, 0.75) andparent TiCoSb are investigated using the full potential linearized augmentedplane wave method and the thermoelectric transport properties are calculated onthe basis of semiclassical Boltzmann transport theory.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 0.25, ',', 0],[14.0, 0.5, ',', 0],[137.0, 0.25, ',', 1],[139.0, 0.5, 'concentration', 1],[156.0, 0.75, 'concentration', 1],[177.0, 0.25, ',', 2],[180.0, 0.5, ',', 2]

Bi1-x
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86242, 86245)
 The electronic structure of TixZr1-xCoSbxBi1-x (x<missing VAR>  0.25, 0.5, 0.75) andparent TiCoSb are investigated using the full potential linearized augmentedplane wave method and the thermoelectric transport properties are calculated onthe basis of semiclassical Boltzmann transport theory.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[6.0, 0.25, ',', 0],[9.0, 0.5, ',', 0],[132.0, 0.25, ',', 1],[134.0, 0.5, 'concentration', 1],[151.0, 0.75, 'concentration', 1],[172.0, 0.25, ',', 2],[175.0, 0.5, ',', 2]

TiCoSb
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86265, 86267)
 The electronic structure of TixZr1-xCoSbxBi1-x (x<missing VAR>  0.25, 0.5, 0.75) andparent TiCoSb are investigated using the full potential linearized augmentedplane wave method and the thermoelectric transport properties are calculated onthe basis of semiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.25, ',', 0],[11.0, 0.5, ',', 0],[110.0, 0.25, ',', 1],[112.0, 0.5, 'concentration', 1],[129.0, 0.75, 'concentration', 1],[150.0, 0.25, ',', 2],[153.0, 0.5, ',', 2]

Zr1-xCo
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86346, 86350)
 The band analysis of thecalculated band structures reveal that TixZr1-xCoSbxBi1-x has semiconductingbehavior with indirect band gap at x<missing VAR>  0.25, 0.5 concentration and direct bandgap behavior at x<missing VAR>  0.75 concentration.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[95.0, 0.25, ',', 1],[92.0, 0.5, ',', 1],[27.0, 0.25, ',', 0],[29.0, 0.5, 'concentration', 0],[46.0, 0.75, 'concentration', 0],[67.0, 0.25, ',', 1],[70.0, 0.5, ',', 1]

Bi1-x
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86352, 86355)
 The band analysis of thecalculated band structures reveal that TixZr1-xCoSbxBi1-x has semiconductingbehavior with indirect band gap at x<missing VAR>  0.25, 0.5 concentration and direct bandgap behavior at x<missing VAR>  0.75 concentration.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[101.0, 0.25, ',', 1],[98.0, 0.5, ',', 1],[22.0, 0.25, ',', 0],[24.0, 0.5, 'concentration', 0],[41.0, 0.75, 'concentration', 0],[62.0, 0.25, ',', 1],[65.0, 0.5, ',', 1]

Zr1-xCo
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86402, 86406)
 The TixZr1-xCoSbxBi1-x (x<missing VAR>  0.25, 0.5,0.75) compounds show smaller band gap values as compared to the pure TiCoSb.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[151.0, 0.25, ',', 2],[148.0, 0.5, ',', 2],[25.0, 0.25, ',', 1],[23.0, 0.5, 'concentration', 1],[6.0, 0.75, 'concentration', 1],[11.0, 0.25, ',', 0],[14.0, 0.5, ',', 0]

Bi1-x
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86408, 86411)
 The TixZr1-xCoSbxBi1-x (x<missing VAR>  0.25, 0.5,0.75) compounds show smaller band gap values as compared to the pure TiCoSb.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[157.0, 0.25, ',', 2],[154.0, 0.5, ',', 2],[31.0, 0.25, ',', 1],[29.0, 0.5, 'concentration', 1],[12.0, 0.75, 'concentration', 1],[6.0, 0.25, ',', 0],[9.0, 0.5, ',', 0]

TiCoSb
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86449, 86451)
 The TixZr1-xCoSbxBi1-x (x<missing VAR>  0.25, 0.5,0.75) compounds show smaller band gap values as compared to the pure TiCoSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 0.25, ',', 2],[195.0, 0.5, ',', 2],[72.0, 0.25, ',', 1],[70.0, 0.5, 'concentration', 1],[53.0, 0.75, 'concentration', 1],[32.0, 0.25, ',', 0],[29.0, 0.5, ',', 0]

Ti/Zr
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86463, 86465)
The d<missing VAR> electrons of Ti/Zr and Co dominate the electronic transport properties ofTixZr1-xCoSbxBi1-x system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[212.0, 0.25, ',', 3],[209.0, 0.5, ',', 3],[86.0, 0.25, ',', 2],[84.0, 0.5, 'concentration', 2],[67.0, 0.75, 'concentration', 2],[46.0, 0.25, ',', 1],[43.0, 0.5, ',', 1]

Co
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86469, 86469)
The d<missing VAR> electrons of Ti/Zr and Co dominate the electronic transport properties ofTixZr1-xCoSbxBi1-x system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 0.25, ',', 3],[215.0, 0.5, ',', 3],[92.0, 0.25, ',', 2],[90.0, 0.5, 'concentration', 2],[73.0, 0.75, 'concentration', 2],[52.0, 0.25, ',', 1],[49.0, 0.5, ',', 1]

Zr1-xCo
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86485, 86489)
The d<missing VAR> electrons of Ti/Zr and Co dominate the electronic transport properties ofTixZr1-xCoSbxBi1-x system.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[234.0, 0.25, ',', 3],[231.0, 0.5, ',', 3],[108.0, 0.25, ',', 2],[106.0, 0.5, 'concentration', 2],[89.0, 0.75, 'concentration', 2],[68.0, 0.25, ',', 1],[65.0, 0.5, ',', 1]

Bi1-x
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86491, 86494)
The d<missing VAR> electrons of Ti/Zr and Co dominate the electronic transport properties ofTixZr1-xCoSbxBi1-x system.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[240.0, 0.25, ',', 3],[237.0, 0.5, ',', 3],[114.0, 0.25, ',', 2],[112.0, 0.5, 'concentration', 2],[95.0, 0.75, 'concentration', 2],[74.0, 0.25, ',', 1],[71.0, 0.5, ',', 1]

HH
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86532, 86533)
 All these systems follow the empirical rule of 18valence-electron content to bring semiconductivity in HH alloys.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 0.25, ',', 4],[278.0, 0.5, ',', 4],[155.0, 0.25, ',', 3],[153.0, 0.5, 'concentration', 3],[136.0, 0.75, 'concentration', 3],[115.0, 0.25, ',', 2],[112.0, 0.5, ',', 2]

TiCoSb
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86547, 86549)
 Theisoelectronic substitution in TiCoSb can tune the band structure by shiftingthe Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 0.25, ',', 5],[293.0, 0.5, ',', 5],[170.0, 0.25, ',', 4],[168.0, 0.5, 'concentration', 4],[151.0, 0.75, 'concentration', 4],[130.0, 0.25, ',', 3],[127.0, 0.5, ',', 3]

In
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86613, 86613)
 In this study wehave showed that the isoelectronic substitution at both Ti and Sb site ofTiCoSb has very small effect for increasing the ZT values and one should go forisoelectronic substitution at any one sites of TiCoSb HH alloys alone toimprove ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 0.25, ',', 7],[359.0, 0.5, ',', 7],[236.0, 0.25, ',', 6],[234.0, 0.5, 'concentration', 6],[217.0, 0.75, 'concentration', 6],[196.0, 0.25, ',', 5],[193.0, 0.5, ',', 5]

Ti
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86638, 86638)
 In this study wehave showed that the isoelectronic substitution at both Ti and Sb site ofTiCoSb has very small effect for increasing the ZT values and one should go forisoelectronic substitution at any one sites of TiCoSb HH alloys alone toimprove ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 0.25, ',', 7],[384.0, 0.5, ',', 7],[261.0, 0.25, ',', 6],[259.0, 0.5, 'concentration', 6],[242.0, 0.75, 'concentration', 6],[221.0, 0.25, ',', 5],[218.0, 0.5, ',', 5]

Sb
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86642, 86642)
 In this study wehave showed that the isoelectronic substitution at both Ti and Sb site ofTiCoSb has very small effect for increasing the ZT values and one should go forisoelectronic substitution at any one sites of TiCoSb HH alloys alone toimprove ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[391.0, 0.25, ',', 7],[388.0, 0.5, ',', 7],[265.0, 0.25, ',', 6],[263.0, 0.5, 'concentration', 6],[246.0, 0.75, 'concentration', 6],[225.0, 0.25, ',', 5],[222.0, 0.5, ',', 5]

TiCoSb
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86649, 86651)
 In this study wehave showed that the isoelectronic substitution at both Ti and Sb site ofTiCoSb has very small effect for increasing the ZT values and one should go forisoelectronic substitution at any one sites of TiCoSb HH alloys alone toimprove ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 0.25, ',', 7],[395.0, 0.5, ',', 7],[272.0, 0.25, ',', 6],[270.0, 0.5, 'concentration', 6],[253.0, 0.75, 'concentration', 6],[232.0, 0.25, ',', 5],[229.0, 0.5, ',', 5]

TiCoSb
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86697, 86699)
 In this study wehave showed that the isoelectronic substitution at both Ti and Sb site ofTiCoSb has very small effect for increasing the ZT values and one should go forisoelectronic substitution at any one sites of TiCoSb HH alloys alone toimprove ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[446.0, 0.25, ',', 7],[443.0, 0.5, ',', 7],[320.0, 0.25, ',', 6],[318.0, 0.5, 'concentration', 6],[301.0, 0.75, 'concentration', 6],[280.0, 0.25, ',', 5],[277.0, 0.5, ',', 5]

HH
###Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86701, 86702)
 In this study wehave showed that the isoelectronic substitution at both Ti and Sb site ofTiCoSb has very small effect for increasing the ZT values and one should go forisoelectronic substitution at any one sites of TiCoSb HH alloys alone toimprove ZT.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[450.0, 0.25, ',', 7],[447.0, 0.5, ',', 7],[324.0, 0.25, ',', 6],[322.0, 0.5, 'concentration', 6],[305.0, 0.75, 'concentration', 6],[284.0, 0.25, ',', 5],[281.0, 0.5, ',', 5]

TiCoSb
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86745, 86747)
Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 1.04, 'eV', 4],[273.0, 0.92, 'eV', 4],[282.0, 0.93, 'eV', 4],[309.0, 18, 'valence', 5]

Co
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86770, 86770)
 The electronic structures of TixZrx/2CoPbxTex, TixZrx/2Hfx/2CoPbxTex (x<missing VAR> 0.5), and the parent compound TiCoSb were investigated using the full potentiallinearized augmented plane wave method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 1.04, 'eV', 3],[250.0, 0.92, 'eV', 3],[259.0, 0.93, 'eV', 3],[286.0, 18, 'valence', 4]

Co
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86782, 86782)
 The electronic structures of TixZrx/2CoPbxTex, TixZrx/2Hfx/2CoPbxTex (x<missing VAR> 0.5), and the parent compound TiCoSb were investigated using the full potentiallinearized augmented plane wave method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 1.04, 'eV', 3],[238.0, 0.92, 'eV', 3],[247.0, 0.93, 'eV', 3],[274.0, 18, 'valence', 4]

TiCoSb
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86803, 86805)
 The electronic structures of TixZrx/2CoPbxTex, TixZrx/2Hfx/2CoPbxTex (x<missing VAR> 0.5), and the parent compound TiCoSb were investigated using the full potentiallinearized augmented plane wave method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 1.04, 'eV', 3],[215.0, 0.92, 'eV', 3],[224.0, 0.93, 'eV', 3],[251.0, 18, 'valence', 4]

Zr
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86893, 86893)
 From the band structure calculations we show that thesubstitution of Zr,Hf in the Ti site and Pb and Te in the Sb site lower theband gap value and also change the indirect band (IB) gap of TiCoSb to thedirect band (D<missing VAR>B) gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 1.04, 'eV', 1],[127.0, 0.92, 'eV', 1],[136.0, 0.93, 'eV', 1],[163.0, 18, 'valence', 2]

Hf
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86895, 86895)
 From the band structure calculations we show that thesubstitution of Zr,Hf in the Ti site and Pb and Te in the Sb site lower theband gap value and also change the indirect band (IB) gap of TiCoSb to thedirect band (D<missing VAR>B) gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1.04, 'eV', 1],[125.0, 0.92, 'eV', 1],[134.0, 0.93, 'eV', 1],[161.0, 18, 'valence', 2]

Ti
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86901, 86901)
 From the band structure calculations we show that thesubstitution of Zr,Hf in the Ti site and Pb and Te in the Sb site lower theband gap value and also change the indirect band (IB) gap of TiCoSb to thedirect band (D<missing VAR>B) gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 1.04, 'eV', 1],[119.0, 0.92, 'eV', 1],[128.0, 0.93, 'eV', 1],[155.0, 18, 'valence', 2]

Pb
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86907, 86907)
 From the band structure calculations we show that thesubstitution of Zr,Hf in the Ti site and Pb and Te in the Sb site lower theband gap value and also change the indirect band (IB) gap of TiCoSb to thedirect band (D<missing VAR>B) gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 1.04, 'eV', 1],[113.0, 0.92, 'eV', 1],[122.0, 0.93, 'eV', 1],[149.0, 18, 'valence', 2]

Te
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86911, 86911)
 From the band structure calculations we show that thesubstitution of Zr,Hf in the Ti site and Pb and Te in the Sb site lower theband gap value and also change the indirect band (IB) gap of TiCoSb to thedirect band (D<missing VAR>B) gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 1.04, 'eV', 1],[109.0, 0.92, 'eV', 1],[118.0, 0.93, 'eV', 1],[145.0, 18, 'valence', 2]

Sb
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86917, 86917)
 From the band structure calculations we show that thesubstitution of Zr,Hf in the Ti site and Pb and Te in the Sb site lower theband gap value and also change the indirect band (IB) gap of TiCoSb to thedirect band (D<missing VAR>B) gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1.04, 'eV', 1],[103.0, 0.92, 'eV', 1],[112.0, 0.93, 'eV', 1],[139.0, 18, 'valence', 2]

(IB)
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86944, 86947)
 From the band structure calculations we show that thesubstitution of Zr,Hf in the Ti site and Pb and Te in the Sb site lower theband gap value and also change the indirect band (IB) gap of TiCoSb to thedirect band (D<missing VAR>B) gap.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1.04, 'eV', 1],[73.0, 0.92, 'eV', 1],[82.0, 0.93, 'eV', 1],[109.0, 18, 'valence', 2]

TiCoSb
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86953, 86955)
 From the band structure calculations we show that thesubstitution of Zr,Hf in the Ti site and Pb and Te in the Sb site lower theband gap value and also change the indirect band (IB) gap of TiCoSb to thedirect band (D<missing VAR>B) gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1.04, 'eV', 1],[65.0, 0.92, 'eV', 1],[74.0, 0.93, 'eV', 1],[101.0, 18, 'valence', 2]

B
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86968, 86968)
 From the band structure calculations we show that thesubstitution of Zr,Hf in the Ti site and Pb and Te in the Sb site lower theband gap value and also change the indirect band (IB) gap of TiCoSb to thedirect band (D<missing VAR>B) gap.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1.04, 'eV', 1],[52.0, 0.92, 'eV', 1],[61.0, 0.93, 'eV', 1],[88.0, 18, 'valence', 2]

TiCoSb
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86984, 86986)
 The calculated band gap of TiCoSb, TixZrx/2CoPbxTex, andTixZrx/2Hfx/2CoPbxTex are 1.04 eV (IB), 0.92 eV (D<missing VAR>B), and 0.93 eV (D<missing VAR>B),respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 1.04, 'eV', 0],[34.0, 0.92, 'eV', 0],[43.0, 0.93, 'eV', 0],[70.0, 18, 'valence', 1]

Co
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(86993, 86993)
 The calculated band gap of TiCoSb, TixZrx/2CoPbxTex, andTixZrx/2Hfx/2CoPbxTex are 1.04 eV (IB), 0.92 eV (D<missing VAR>B), and 0.93 eV (D<missing VAR>B),respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1.04, 'eV', 0],[27.0, 0.92, 'eV', 0],[36.0, 0.93, 'eV', 0],[63.0, 18, 'valence', 1]

Co
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(87008, 87008)
 The calculated band gap of TiCoSb, TixZrx/2CoPbxTex, andTixZrx/2Hfx/2CoPbxTex are 1.04 eV (IB), 0.92 eV (D<missing VAR>B), and 0.93 eV (D<missing VAR>B),respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 1.04, 'eV', 0],[12.0, 0.92, 'eV', 0],[21.0, 0.93, 'eV', 0],[48.0, 18, 'valence', 1]

(IB)
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(87015, 87018)
 The calculated band gap of TiCoSb, TixZrx/2CoPbxTex, andTixZrx/2Hfx/2CoPbxTex are 1.04 eV (IB), 0.92 eV (D<missing VAR>B), and 0.93 eV (D<missing VAR>B),respectively.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1.04, 'eV', 0],[2.0, 0.92, 'eV', 0],[11.0, 0.93, 'eV', 0],[38.0, 18, 'valence', 1]

B
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(87024, 87024)
 The calculated band gap of TiCoSb, TixZrx/2CoPbxTex, andTixZrx/2Hfx/2CoPbxTex are 1.04 eV (IB), 0.92 eV (D<missing VAR>B), and 0.93 eV (D<missing VAR>B),respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1.04, 'eV', 0],[4.0, 0.92, 'eV', 0],[5.0, 0.93, 'eV', 0],[32.0, 18, 'valence', 1]

B
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(87033, 87033)
 The calculated band gap of TiCoSb, TixZrx/2CoPbxTex, andTixZrx/2Hfx/2CoPbxTex are 1.04 eV (IB), 0.92 eV (D<missing VAR>B), and 0.93 eV (D<missing VAR>B),respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1.04, 'eV', 0],[13.0, 0.92, 'eV', 0],[4.0, 0.93, 'eV', 0],[23.0, 18, 'valence', 1]

Hf
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(87099, 87099)
 It is shown that the substitution of Hf at the Ti site improve the ZTvalue (1.05) at room temperature, whereas there is no significant differencein ZT is found at higher temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1.04, 'eV', 2],[79.0, 0.92, 'eV', 2],[70.0, 0.93, 'eV', 2],[43.0, 18, 'valence', 1]

Ti
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(87105, 87105)
 It is shown that the substitution of Hf at the Ti site improve the ZTvalue (1.05) at room temperature, whereas there is no significant differencein ZT is found at higher temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1.04, 'eV', 2],[85.0, 0.92, 'eV', 2],[76.0, 0.93, 'eV', 2],[49.0, 18, 'valence', 1]

Hf
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(87189, 87189)
 Based on the calculated thermoelectrictransport properties, we conclude that the appropriate concentration of Hfsubstitution can further improve the thermoelectric performance ofTixZrx/2Hfx/2CoPbxTex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 1.04, 'eV', 3],[169.0, 0.92, 'eV', 3],[160.0, 0.93, 'eV', 3],[133.0, 18, 'valence', 2]

Co
###Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys|Mukesh K. Choudhary,P. Ravindran###
(87216, 87216)
 Based on the calculated thermoelectrictransport properties, we conclude that the appropriate concentration of Hfsubstitution can further improve the thermoelectric performance ofTixZrx/2Hfx/2CoPbxTex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 1.04, 'eV', 3],[196.0, 0.92, 'eV', 3],[187.0, 0.93, 'eV', 3],[160.0, 18, 'valence', 2]

(BP)
###High thermoelectric performance in the hexagonal bilayer structure consisting of light boron and phosphorus elements|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao,C. Y. Sheng###
(87337, 87340)
 Using first-principlescalculations and Boltzmann transport theory, we give an accurate prediction ofthe thermoelectric properties of boron phosphide (BP) bilayer, where thecarrier relaxation time is treated within the framework of electron-phononcoupling.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.88, 'eV', 2],[191.0, 1200, 'K', 3]

BP
###High thermoelectric performance in the hexagonal bilayer structure consisting of light boron and phosphorus elements|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao,C. Y. Sheng###
(87394, 87395)
 It is found that the lattice thermal conductivity of BP bilayer ismuch lower than that of its monolayer structure, which can be attributed to thepresence of van der Waals interactions.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0.88, 'eV', 1],[136.0, 1200, 'K', 2]

BP
###High thermoelectric performance in the hexagonal bilayer structure consisting of light boron and phosphorus elements|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao,C. Y. Sheng###
(87460, 87461)
 On the other hand, the graphene-like BPbilayer shows very high carrier mobility with a moderate band gap of 0.88 eV.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.88, 'eV', 0],[70.0, 1200, 'K', 1]

As
###High thermoelectric performance in the hexagonal bilayer structure consisting of light boron and phosphorus elements|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao,C. Y. Sheng###
(87491, 87491)
As a consequence, a maximum p<missing VAR>-type ZT value of 1.8 can be realized along thex<missing VAR>-direction at 1200 K, which is amazingly high for systems consisting of lightelements only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.88, 'eV', 1],[40.0, 1200, 'K', 0]

GeTe
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(87689, 87690)
Unusual thermoelectric transport anisotropy in quasi-2D<missing VAR>, rhombohedral GeTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 500, 'cm', 6]

In
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(87693, 87693)
 In this study, we calculate the T<missing VAR>300 K scattering and thermoelectrictransport properties of rhombohedral GeTe using first-principles modeling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 500, 'cm', 5]

K
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(87709, 87709)
 In this study, we calculate the T<missing VAR>300 K scattering and thermoelectrictransport properties of rhombohedral GeTe using first-principles modeling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 500, 'cm', 5]

GeTe
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(87726, 87727)
 In this study, we calculate the T<missing VAR>300 K scattering and thermoelectrictransport properties of rhombohedral GeTe using first-principles modeling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 500, 'cm', 5]

GeTe
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(87749, 87750)
 Theroom-temperature phase of GeTe has a layered structure, with cross-plane andin-plane directions oriented parallel and perpendicular to [111], respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 500, 'cm', 4]

GeTe
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(87828, 87829)
Based on rigorous electron-phonon scattering, our transport calculations revealunusual anisotropic properties; n<missing VAR>-type GeTe has a cross-plane electricalconductivity that is roughly 3times larger than in-plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 500, 'cm', 3]

GeTe
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(87866, 87867)
 p<missing VAR>-type GeTe,however, displays opposite anisotropy with in-plane conducting roughly2times more than cross-plane, as is expected in quasi-2D<missing VAR> materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 500, 'cm', 2]

GeTe
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(87969, 87970)
 Interestingly, cross-planen<missing VAR>-GeTe shows the largest mobility and power factor approaching 500 cm2/V-s<missing VAR>and 32 muW/cm-K2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 500, 'cm', 0]

V
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(87990, 87990)
 Interestingly, cross-planen<missing VAR>-GeTe shows the largest mobility and power factor approaching 500 cm2/V-s<missing VAR>and 32 muW/cm-K2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 500, 'cm', 0]

W
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(88000, 88000)
 Interestingly, cross-planen<missing VAR>-GeTe shows the largest mobility and power factor approaching 500 cm2/V-s<missing VAR>and 32 muW/cm-K2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 500, 'cm', 0]

K2
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(88004, 88005)
 Interestingly, cross-planen<missing VAR>-GeTe shows the largest mobility and power factor approaching 500 cm2/V-s<missing VAR>and 32 muW/cm-K2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 500, 'cm', 0]

GeTe
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(88049, 88050)
 The thermoelectric figure-of-merit, zT,is enhanced as a result of this unusual anisotropy in n<missing VAR>-GeTe since the latticethermal conductivity is minimized along cross-plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 500, 'cm', 1]

Ge
###Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe|Vahid Askarpour,Jesse Maassen###
(88152, 88152)
 The n<missing VAR>-type anisotropyresults from high-velocity electron states formed by Ge p<missing VAR>-orbitals that spanacross the interstitial region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 500, 'cm', 3]

CaAl2Si2
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88263, 88267)
First principles study on the thermoelectric performance of CaAl2Si2-type Zintl phase compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 300, 'K', 5],[366.0, 300, 'K', 5],[377.0, 10, 'fs', 5],[393.0, 2, 'W', 5]

CaAl2Si2
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88290, 88294)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 300, 'K', 4],[339.0, 300, 'K', 4],[350.0, 10, 'fs', 4],[366.0, 2, 'W', 4]

B2
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88306, 88307)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 300, 'K', 4],[326.0, 300, 'K', 4],[337.0, 10, 'fs', 4],[353.0, 2, 'W', 4]

Mg
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88315, 88315)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 300, 'K', 4],[318.0, 300, 'K', 4],[329.0, 10, 'fs', 4],[345.0, 2, 'W', 4]

Ca
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88318, 88318)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 300, 'K', 4],[315.0, 300, 'K', 4],[326.0, 10, 'fs', 4],[342.0, 2, 'W', 4]

Sr
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88321, 88321)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 300, 'K', 4],[312.0, 300, 'K', 4],[323.0, 10, 'fs', 4],[339.0, 2, 'W', 4]

Ba
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88324, 88324)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 300, 'K', 4],[309.0, 300, 'K', 4],[320.0, 10, 'fs', 4],[336.0, 2, 'W', 4]

B
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88327, 88327)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 300, 'K', 4],[306.0, 300, 'K', 4],[317.0, 10, 'fs', 4],[333.0, 2, 'W', 4]

Mg
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88330, 88330)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 300, 'K', 4],[303.0, 300, 'K', 4],[314.0, 10, 'fs', 4],[330.0, 2, 'W', 4]

Zn
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88333, 88333)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 300, 'K', 4],[300.0, 300, 'K', 4],[311.0, 10, 'fs', 4],[327.0, 2, 'W', 4]

Cd
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88336, 88336)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 300, 'K', 4],[297.0, 300, 'K', 4],[308.0, 10, 'fs', 4],[324.0, 2, 'W', 4]

P
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88344, 88344)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 300, 'K', 4],[289.0, 300, 'K', 4],[300.0, 10, 'fs', 4],[316.0, 2, 'W', 4]

As
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88348, 88348)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 300, 'K', 4],[285.0, 300, 'K', 4],[296.0, 10, 'fs', 4],[312.0, 2, 'W', 4]

Sb
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88351, 88351)
 We investigate the thermoelectric properties of CaAl2Si2-type Zintlphase compounds AB2X<missing VAR>2 (A  Mg, Ca, Sr, Ba, B  Mg, Zn, Cd, and X<missing VAR>  P,As, Sb) using first principles band calculations within the Boltzmann transporttheory assuming the constant relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 300, 'K', 4],[282.0, 300, 'K', 4],[293.0, 10, 'fs', 4],[309.0, 2, 'W', 4]

BaMg2P2
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88565, 88569)
 BaMg2P2 for PF sim20muW/cmK2 and ZT > 0.2 at 300K and SrZn2As2 for PF sim35muW/cmK2 and ZT > 0.35 at 300K assuming a relaxation time of 10 fs anda lattice thermal conductivity value of 2 W/m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 300, 'K', 0],[64.0, 300, 'K', 0],[75.0, 10, 'fs', 0],[91.0, 2, 'W', 0]

PF
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88573, 88574)
 BaMg2P2 for PF sim20muW/cmK2 and ZT > 0.2 at 300K and SrZn2As2 for PF sim35muW/cmK2 and ZT > 0.35 at 300K assuming a relaxation time of 10 fs anda lattice thermal conductivity value of 2 W/m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 300, 'K', 0],[59.0, 300, 'K', 0],[70.0, 10, 'fs', 0],[86.0, 2, 'W', 0]

W
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88581, 88581)
 BaMg2P2 for PF sim20muW/cmK2 and ZT > 0.2 at 300K and SrZn2As2 for PF sim35muW/cmK2 and ZT > 0.35 at 300K assuming a relaxation time of 10 fs anda lattice thermal conductivity value of 2 W/m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 300, 'K', 0],[52.0, 300, 'K', 0],[63.0, 10, 'fs', 0],[79.0, 2, 'W', 0]

K2
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88584, 88585)
 BaMg2P2 for PF sim20muW/cmK2 and ZT > 0.2 at 300K and SrZn2As2 for PF sim35muW/cmK2 and ZT > 0.35 at 300K assuming a relaxation time of 10 fs anda lattice thermal conductivity value of 2 W/m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 300, 'K', 0],[48.0, 300, 'K', 0],[59.0, 10, 'fs', 0],[75.0, 2, 'W', 0]

SrZn2As2
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88601, 88605)
 BaMg2P2 for PF sim20muW/cmK2 and ZT > 0.2 at 300K and SrZn2As2 for PF sim35muW/cmK2 and ZT > 0.35 at 300K assuming a relaxation time of 10 fs anda lattice thermal conductivity value of 2 W/m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 300, 'K', 0],[28.0, 300, 'K', 0],[39.0, 10, 'fs', 0],[55.0, 2, 'W', 0]

PF
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88609, 88610)
 BaMg2P2 for PF sim20muW/cmK2 and ZT > 0.2 at 300K and SrZn2As2 for PF sim35muW/cmK2 and ZT > 0.35 at 300K assuming a relaxation time of 10 fs anda lattice thermal conductivity value of 2 W/m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 300, 'K', 0],[23.0, 300, 'K', 0],[34.0, 10, 'fs', 0],[50.0, 2, 'W', 0]

W
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88617, 88617)
 BaMg2P2 for PF sim20muW/cmK2 and ZT > 0.2 at 300K and SrZn2As2 for PF sim35muW/cmK2 and ZT > 0.35 at 300K assuming a relaxation time of 10 fs anda lattice thermal conductivity value of 2 W/m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 300, 'K', 0],[16.0, 300, 'K', 0],[27.0, 10, 'fs', 0],[43.0, 2, 'W', 0]

K2
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88620, 88621)
 BaMg2P2 for PF sim20muW/cmK2 and ZT > 0.2 at 300K and SrZn2As2 for PF sim35muW/cmK2 and ZT > 0.35 at 300K assuming a relaxation time of 10 fs anda lattice thermal conductivity value of 2 W/m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 300, 'K', 0],[12.0, 300, 'K', 0],[23.0, 10, 'fs', 0],[39.0, 2, 'W', 0]

K
###First principles study on the thermoelectric performance of CaAl$_2$Si$_2$-type Zintl phase compounds|Hidetomo Usui,Kazuhiko Kuroki###
(88663, 88663)
 BaMg2P2 for PF sim20muW/cmK2 and ZT > 0.2 at 300K and SrZn2As2 for PF sim35muW/cmK2 and ZT > 0.35 at 300K assuming a relaxation time of 10 fs anda lattice thermal conductivity value of 2 W/m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 300, 'K', 0],[30.0, 300, 'K', 0],[19.0, 10, 'fs', 0],[3.0, 2, 'W', 0]

Mg3Sb2
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88688, 88691)
Probing efficient n<missing VAR>-type lanthanide dopants for Mg3Sb2 thermoelectrics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 1.3, 'with', 4],[371.0, 1.65, 'and', 6],[372.0, 1.75, 'at', 6],[373.0, 775, 'K', 6]

Mg3Sb2
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88708, 88711)
 The recent discovery of n<missing VAR>-type Mg3Sb2 thermoelectric has ignitedintensive research activities on searching for potential n<missing VAR>-type dopants forthis material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 1.3, 'with', 3],[351.0, 1.65, 'and', 5],[352.0, 1.75, 'at', 5],[353.0, 775, 'K', 5]

Mg3Sb2
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88791, 88794)
 Using first-principles defect calculations, here we conduct asystematic computational screening of potential efficient n<missing VAR>-type lanthanidedopants for Mg3Sb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 1.3, 'with', 2],[268.0, 1.65, 'and', 4],[269.0, 1.75, 'at', 4],[270.0, 775, 'K', 4]

In
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88797, 88797)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 1.3, 'with', 1],[265.0, 1.65, 'and', 3],[266.0, 1.75, 'at', 3],[267.0, 775, 'K', 3]

La
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88803, 88803)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 1.3, 'with', 1],[259.0, 1.65, 'and', 3],[260.0, 1.75, 'at', 3],[261.0, 775, 'K', 3]

Ce
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88806, 88806)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 1.3, 'with', 1],[256.0, 1.65, 'and', 3],[257.0, 1.75, 'at', 3],[258.0, 775, 'K', 3]

Pr
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88809, 88809)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 1.3, 'with', 1],[253.0, 1.65, 'and', 3],[254.0, 1.75, 'at', 3],[255.0, 775, 'K', 3]

Tm
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88814, 88814)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 1.3, 'with', 1],[248.0, 1.65, 'and', 3],[249.0, 1.75, 'at', 3],[250.0, 775, 'K', 3]

K
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88853, 88853)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1.3, 'with', 1],[209.0, 1.65, 'and', 3],[210.0, 1.75, 'at', 3],[211.0, 775, 'K', 3]

Mg
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88870, 88870)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 1.3, 'with', 1],[192.0, 1.65, 'and', 3],[193.0, 1.75, 'at', 3],[194.0, 775, 'K', 3]

Nd
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88876, 88876)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 1.3, 'with', 1],[186.0, 1.65, 'and', 3],[187.0, 1.75, 'at', 3],[188.0, 775, 'K', 3]

Gd
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88879, 88879)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1.3, 'with', 1],[183.0, 1.65, 'and', 3],[184.0, 1.75, 'at', 3],[185.0, 775, 'K', 3]

Ho
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88882, 88882)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 1.3, 'with', 1],[180.0, 1.65, 'and', 3],[181.0, 1.75, 'at', 3],[182.0, 775, 'K', 3]

Lu
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88887, 88887)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1.3, 'with', 1],[175.0, 1.65, 'and', 3],[176.0, 1.75, 'at', 3],[177.0, 775, 'K', 3]

Te
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88920, 88920)
 In addition to La, Ce, Pr, and Tm, we find that highelectron concentration (geq 1020 cm-3 at the growth temperature of900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, whichare generally more efficient than other lanthanide dopants and the anion-sitedopant Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1.3, 'with', 1],[142.0, 1.65, 'and', 3],[143.0, 1.75, 'at', 3],[144.0, 775, 'K', 3]

Nd
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88930, 88930)
 Experimentally, we confirm Nd and Tm as effective n<missing VAR>-type dopants forMg3Sb2 since doping with Nd and Tm shows superior thermoelectric figureof merit zT geq 1.3 with higher electron concentration than doping with Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1.3, 'with', 0],[132.0, 1.65, 'and', 2],[133.0, 1.75, 'at', 2],[134.0, 775, 'K', 2]

Tm
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88934, 88934)
 Experimentally, we confirm Nd and Tm as effective n<missing VAR>-type dopants forMg3Sb2 since doping with Nd and Tm shows superior thermoelectric figureof merit zT geq 1.3 with higher electron concentration than doping with Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1.3, 'with', 0],[128.0, 1.65, 'and', 2],[129.0, 1.75, 'at', 2],[130.0, 775, 'K', 2]

Mg3Sb2
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88949, 88952)
 Experimentally, we confirm Nd and Tm as effective n<missing VAR>-type dopants forMg3Sb2 since doping with Nd and Tm shows superior thermoelectric figureof merit zT geq 1.3 with higher electron concentration than doping with Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1.3, 'with', 0],[110.0, 1.65, 'and', 2],[111.0, 1.75, 'at', 2],[112.0, 775, 'K', 2]

Nd
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88960, 88960)
 Experimentally, we confirm Nd and Tm as effective n<missing VAR>-type dopants forMg3Sb2 since doping with Nd and Tm shows superior thermoelectric figureof merit zT geq 1.3 with higher electron concentration than doping with Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1.3, 'with', 0],[102.0, 1.65, 'and', 2],[103.0, 1.75, 'at', 2],[104.0, 775, 'K', 2]

Tm
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88964, 88964)
 Experimentally, we confirm Nd and Tm as effective n<missing VAR>-type dopants forMg3Sb2 since doping with Nd and Tm shows superior thermoelectric figureof merit zT geq 1.3 with higher electron concentration than doping with Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 1.3, 'with', 0],[98.0, 1.65, 'and', 2],[99.0, 1.75, 'at', 2],[100.0, 775, 'K', 2]

Te
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(88997, 88997)
 Experimentally, we confirm Nd and Tm as effective n<missing VAR>-type dopants forMg3Sb2 since doping with Nd and Tm shows superior thermoelectric figureof merit zT geq 1.3 with higher electron concentration than doping with Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1.3, 'with', 0],[65.0, 1.65, 'and', 2],[66.0, 1.75, 'at', 2],[67.0, 775, 'K', 2]

Nd
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(89007, 89007)
Through codoping with Nd (Tm) and Te, simultaneous power factor improvement andthermal conductivity reduction are achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1.3, 'with', 1],[55.0, 1.65, 'and', 1],[56.0, 1.75, 'at', 1],[57.0, 775, 'K', 1]

(Tm)
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(89009, 89011)
Through codoping with Nd (Tm) and Te, simultaneous power factor improvement andthermal conductivity reduction are achieved.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1.3, 'with', 1],[51.0, 1.65, 'and', 1],[52.0, 1.75, 'at', 1],[53.0, 775, 'K', 1]

Te
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(89015, 89015)
Through codoping with Nd (Tm) and Te, simultaneous power factor improvement andthermal conductivity reduction are achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 1.3, 'with', 1],[47.0, 1.65, 'and', 1],[48.0, 1.75, 'at', 1],[49.0, 775, 'K', 1]

As
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(89040, 89040)
 As a result, we obtain high zTvalues of about 1.65 and 1.75 at 775 K in n<missing VAR>-typeMg3.5Nd0.04Sb1.97Te0.03 andMg3.5Tm0.03Sb1.97Te0.03, respectively, which are among thehighest values for n<missing VAR>-type Mg3Sb2 without alloying with Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 1.3, 'with', 2],[22.0, 1.65, 'and', 0],[23.0, 1.75, 'at', 0],[24.0, 775, 'K', 0]

Mg3.5Nd0.04Sb1.97Te0.03
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(89073, 89080)
 As a result, we obtain high zTvalues of about 1.65 and 1.75 at 775 K in n<missing VAR>-typeMg3.5Nd0.04Sb1.97Te0.03 andMg3.5Tm0.03Sb1.97Te0.03, respectively, which are among thehighest values for n<missing VAR>-type Mg3Sb2 without alloying with Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.631768953068592,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3555956678700361,0.005415162454873646,0,0,0,0,0,0,0,0.007220216606498195,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 1.3, 'with', 2],[11.0, 1.65, 'and', 0],[10.0, 1.75, 'at', 0],[9.0, 775, 'K', 0]

Mg3.5Tm0.03Sb1.97Te0.03
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(89085, 89092)
 As a result, we obtain high zTvalues of about 1.65 and 1.75 at 775 K in n<missing VAR>-typeMg3.5Nd0.04Sb1.97Te0.03 andMg3.5Tm0.03Sb1.97Te0.03, respectively, which are among thehighest values for n<missing VAR>-type Mg3Sb2 without alloying with Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6329113924050632,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3562386980108499,0.005424954792043399,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.005424954792043399,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 1.3, 'with', 2],[23.0, 1.65, 'and', 0],[22.0, 1.75, 'at', 0],[21.0, 775, 'K', 0]

Mg3Sb2
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(89117, 89120)
 As a result, we obtain high zTvalues of about 1.65 and 1.75 at 775 K in n<missing VAR>-typeMg3.5Nd0.04Sb1.97Te0.03 andMg3.5Tm0.03Sb1.97Te0.03, respectively, which are among thehighest values for n<missing VAR>-type Mg3Sb2 without alloying with Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 1.3, 'with', 2],[55.0, 1.65, 'and', 0],[54.0, 1.75, 'at', 0],[53.0, 775, 'K', 0]

Mg3Bi2
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(89128, 89131)
 As a result, we obtain high zTvalues of about 1.65 and 1.75 at 775 K in n<missing VAR>-typeMg3.5Nd0.04Sb1.97Te0.03 andMg3.5Tm0.03Sb1.97Te0.03, respectively, which are among thehighest values for n<missing VAR>-type Mg3Sb2 without alloying with Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 1.3, 'with', 2],[66.0, 1.65, 'and', 0],[65.0, 1.75, 'at', 0],[64.0, 775, 'K', 0]

Mg3Sb2
###Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics|Jiawei Zhang,Lirong Song,Bo Brummerstedt Iversen###
(89164, 89167)
 Thiswork sheds light on exploring promising n<missing VAR>-type dopants for the design ofMg3Sb2 thermoelectrics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 1.3, 'with', 3],[102.0, 1.65, 'and', 1],[101.0, 1.75, 'at', 1],[100.0, 775, 'K', 1]

In
###Optimal Band Structure for Thermoelectrics with Realistic Scattering and Bands|Junsoo Park,Yi Xia,Vidvuds Ozoliņš,Anubhav Jain###
(89267, 89267)
 In this study, we applymore rigorous scattering treatments to more realistic model band structures -upward-parabolic bands that inflect to an inverted parabolic behavior -including cases of multiple bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Optimal Band Structure for Thermoelectrics with Realistic Scattering and Bands|Junsoo Park,Yi Xia,Vidvuds Ozoliņš,Anubhav Jain###
(89336, 89336)
 In contrast to common descriptors (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IV
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(89592, 89593)
First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, -60, '%', 3],[233.0, 300, 'K', 5],[271.0, 65, '%', 5],[591.0, 750, 'K', 11],[604.0, 0.6, 'in', 11],[643.0, 2.7, 'in', 11],[649.0, 1.5, 'in', 11]

VI
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(89595, 89596)
First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, -60, '%', 3],[230.0, 300, 'K', 5],[268.0, 65, '%', 5],[588.0, 750, 'K', 11],[601.0, 0.6, 'in', 11],[640.0, 2.7, 'in', 11],[646.0, 1.5, 'in', 11]

SnSe
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(89602, 89603)
First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, -60, '%', 3],[223.0, 300, 'K', 5],[261.0, 65, '%', 5],[581.0, 750, 'K', 11],[594.0, 0.6, 'in', 11],[633.0, 2.7, 'in', 11],[639.0, 1.5, 'in', 11]

SnS
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(89607, 89608)
First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, -60, '%', 3],[218.0, 300, 'K', 5],[256.0, 65, '%', 5],[576.0, 750, 'K', 11],[589.0, 0.6, 'in', 11],[628.0, 2.7, 'in', 11],[634.0, 1.5, 'in', 11]

SnSe
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(89636, 89637)
 We conduct comprehensive investigations of both thermal and electricaltransport properties of SnSe and SnS using first-principles calculationscombined with the Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, -60, '%', 2],[189.0, 300, 'K', 4],[227.0, 65, '%', 4],[547.0, 750, 'K', 10],[560.0, 0.6, 'in', 10],[599.0, 2.7, 'in', 10],[605.0, 1.5, 'in', 10]

SnS
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(89641, 89642)
 We conduct comprehensive investigations of both thermal and electricaltransport properties of SnSe and SnS using first-principles calculationscombined with the Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, -60, '%', 2],[184.0, 300, 'K', 4],[222.0, 65, '%', 4],[542.0, 750, 'K', 10],[555.0, 0.6, 'in', 10],[594.0, 2.7, 'in', 10],[600.0, 1.5, 'in', 10]

SnSe
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(89682, 89683)
 Due to the distinct layeredlattice structure, SnSe and SnS exhibit similarly anisotropic thermal andelectrical behaviors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, -60, '%', 1],[143.0, 300, 'K', 3],[181.0, 65, '%', 3],[501.0, 750, 'K', 9],[514.0, 0.6, 'in', 9],[553.0, 2.7, 'in', 9],[559.0, 1.5, 'in', 9]

SnS
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(89687, 89688)
 Due to the distinct layeredlattice structure, SnSe and SnS exhibit similarly anisotropic thermal andelectrical behaviors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, -60, '%', 1],[138.0, 300, 'K', 3],[176.0, 65, '%', 3],[496.0, 750, 'K', 9],[509.0, 0.6, 'in', 9],[548.0, 2.7, 'in', 9],[554.0, 1.5, 'in', 9]

SnSe
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(90082, 90083)
 SnSe exhibits larger optimal ZTscompared with SnS in both p<missing VAR>-type and n<missing VAR>-type materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, -60, '%', 6],[256.0, 300, 'K', 4],[218.0, 65, '%', 4],[101.0, 750, 'K', 2],[114.0, 0.6, 'in', 2],[153.0, 2.7, 'in', 2],[159.0, 1.5, 'in', 2]

SnS
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(90100, 90101)
 SnSe exhibits larger optimal ZTscompared with SnS in both p<missing VAR>-type and n<missing VAR>-type materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, -60, '%', 6],[274.0, 300, 'K', 4],[236.0, 65, '%', 4],[83.0, 750, 'K', 2],[96.0, 0.6, 'in', 2],[135.0, 2.7, 'in', 2],[141.0, 1.5, 'in', 2]

SnSe
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(90193, 90194)
 The predicted highest ZT values at 750 K are1.0 in SnSe and 0.6 in SnS along the b<missing VAR> axis for the p<missing VAR>-type doping whilethose for the n<missing VAR>-type doping reach 2.7 in SnSe and 1.5 in SnS along the aaxis, rendering them among the best bulk thermoelectric materials forlarge-scale applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[468.0, -60, '%', 8],[367.0, 300, 'K', 6],[329.0, 65, '%', 6],[9.0, 750, 'K', 0],[3.0, 0.6, 'in', 0],[42.0, 2.7, 'in', 0],[48.0, 1.5, 'in', 0]

SnS
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(90199, 90200)
 The predicted highest ZT values at 750 K are1.0 in SnSe and 0.6 in SnS along the b<missing VAR> axis for the p<missing VAR>-type doping whilethose for the n<missing VAR>-type doping reach 2.7 in SnSe and 1.5 in SnS along the aaxis, rendering them among the best bulk thermoelectric materials forlarge-scale applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[474.0, -60, '%', 8],[373.0, 300, 'K', 6],[335.0, 65, '%', 6],[15.0, 750, 'K', 0],[2.0, 0.6, 'in', 0],[36.0, 2.7, 'in', 0],[42.0, 1.5, 'in', 0]

SnSe
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(90238, 90239)
 The predicted highest ZT values at 750 K are1.0 in SnSe and 0.6 in SnS along the b<missing VAR> axis for the p<missing VAR>-type doping whilethose for the n<missing VAR>-type doping reach 2.7 in SnSe and 1.5 in SnS along the aaxis, rendering them among the best bulk thermoelectric materials forlarge-scale applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[513.0, -60, '%', 8],[412.0, 300, 'K', 6],[374.0, 65, '%', 6],[54.0, 750, 'K', 0],[41.0, 0.6, 'in', 0],[2.0, 2.7, 'in', 0],[3.0, 1.5, 'in', 0]

SnS
###First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS|Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang###
(90244, 90245)
 The predicted highest ZT values at 750 K are1.0 in SnSe and 0.6 in SnS along the b<missing VAR> axis for the p<missing VAR>-type doping whilethose for the n<missing VAR>-type doping reach 2.7 in SnSe and 1.5 in SnS along the aaxis, rendering them among the best bulk thermoelectric materials forlarge-scale applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[519.0, -60, '%', 8],[418.0, 300, 'K', 6],[380.0, 65, '%', 6],[60.0, 750, 'K', 0],[47.0, 0.6, 'in', 0],[8.0, 2.7, 'in', 0],[2.0, 1.5, 'in', 0]

Si
###Decouple Electronic and Phononic Transport in Nanotwinned Structure: A New Strategy for Enhancing the Figure-of-merit of Thermoelectrics|Yanguang Zhou,Xiaojing Gong,Ben Xu,Ming Hu###
(90597, 90597)
 Combining the new concept of nanotwin withthe previously widely used nanocrystalline approach, the power factor of the Sinanotwin-nanocrystalline heterostructures is enhanced by 120% compared to bulkcrystalline Si, while the lattice thermal conductivity is reduced to a levelwell below the amorphous limit, yielding a theoretical limit of 0.43 for ZTcoefficient at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 120, '%', 0],[71.0, 0.43, 'for', 0],[157.0, 5, 'nm', 3],[177.0, 0.2, 'at', 3]

Si
###Decouple Electronic and Phononic Transport in Nanotwinned Structure: A New Strategy for Enhancing the Figure-of-merit of Thermoelectrics|Yanguang Zhou,Xiaojing Gong,Ben Xu,Ming Hu###
(90624, 90624)
 Combining the new concept of nanotwin withthe previously widely used nanocrystalline approach, the power factor of the Sinanotwin-nanocrystalline heterostructures is enhanced by 120% compared to bulkcrystalline Si, while the lattice thermal conductivity is reduced to a levelwell below the amorphous limit, yielding a theoretical limit of 0.43 for ZTcoefficient at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 120, '%', 0],[44.0, 0.43, 'for', 0],[130.0, 5, 'nm', 3],[150.0, 0.2, 'at', 3]

Si
###Decouple Electronic and Phononic Transport in Nanotwinned Structure: A New Strategy for Enhancing the Figure-of-merit of Thermoelectrics|Yanguang Zhou,Xiaojing Gong,Ben Xu,Ming Hu###
(90710, 90710)
 This value is almost two orders of magnitudelarger than that for bulk Si and twice of the polycrystalline Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 120, '%', 1],[42.0, 0.43, 'for', 1],[44.0, 5, 'nm', 2],[64.0, 0.2, 'at', 2]

Si
###Decouple Electronic and Phononic Transport in Nanotwinned Structure: A New Strategy for Enhancing the Figure-of-merit of Thermoelectrics|Yanguang Zhou,Xiaojing Gong,Ben Xu,Ming Hu###
(90722, 90722)
 This value is almost two orders of magnitudelarger than that for bulk Si and twice of the polycrystalline Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 120, '%', 1],[54.0, 0.43, 'for', 1],[32.0, 5, 'nm', 2],[52.0, 0.2, 'at', 2]

Si
###Decouple Electronic and Phononic Transport in Nanotwinned Structure: A New Strategy for Enhancing the Figure-of-merit of Thermoelectrics|Yanguang Zhou,Xiaojing Gong,Ben Xu,Ming Hu###
(90801, 90801)
 grainsize of 5 nm), the ZT coefficient can be as high as 0.2 at room temperature,which is the highest ZT value among all the Si based bulk nanostructures sofar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 120, '%', 3],[133.0, 0.43, 'for', 3],[47.0, 5, 'nm', 0],[27.0, 0.2, 'at', 0]

As
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(90973, 90973)
Thermoelectric properties of -As, Sb and Bi monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, -1, ',', 6],[373.0, -1, ',', 6],[407.0, 2, 'D', 6],[438.0, 2, 'D', 7]

Sb
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(90976, 90976)
Thermoelectric properties of -As, Sb and Bi monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, -1, ',', 6],[370.0, -1, ',', 6],[404.0, 2, 'D', 6],[435.0, 2, 'D', 7]

Bi
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(90980, 90980)
Thermoelectric properties of -As, Sb and Bi monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, -1, ',', 6],[366.0, -1, ',', 6],[400.0, 2, 'D', 6],[431.0, 2, 'D', 7]

V
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(90993, 90993)
 Monolayer semiconductors of group-VA elements (As, Sb, Bi) with graphenelikebuckled structure offer a potential to achieve nanoscale electronic,optoelectronic and thermoelectric devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, -1, ',', 5],[353.0, -1, ',', 5],[387.0, 2, 'D', 5],[418.0, 2, 'D', 6]

As
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(90999, 90999)
 Monolayer semiconductors of group-VA elements (As, Sb, Bi) with graphenelikebuckled structure offer a potential to achieve nanoscale electronic,optoelectronic and thermoelectric devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, -1, ',', 5],[347.0, -1, ',', 5],[381.0, 2, 'D', 5],[412.0, 2, 'D', 6]

Sb
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91002, 91002)
 Monolayer semiconductors of group-VA elements (As, Sb, Bi) with graphenelikebuckled structure offer a potential to achieve nanoscale electronic,optoelectronic and thermoelectric devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, -1, ',', 5],[344.0, -1, ',', 5],[378.0, 2, 'D', 5],[409.0, 2, 'D', 6]

Bi
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91005, 91005)
 Monolayer semiconductors of group-VA elements (As, Sb, Bi) with graphenelikebuckled structure offer a potential to achieve nanoscale electronic,optoelectronic and thermoelectric devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, -1, ',', 5],[341.0, -1, ',', 5],[375.0, 2, 'D', 5],[406.0, 2, 'D', 6]

Sb
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91050, 91050)
 Motivated by recently-fabricated Sbmonolayer, we systematically investigate the thermoelectric properties ofbeta-As, Sb and Bi monolayers by combining the first-principles calculationsand semiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, -1, ',', 4],[296.0, -1, ',', 4],[330.0, 2, 'D', 4],[361.0, 2, 'D', 5]

As
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91073, 91073)
 Motivated by recently-fabricated Sbmonolayer, we systematically investigate the thermoelectric properties ofbeta-As, Sb and Bi monolayers by combining the first-principles calculationsand semiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, -1, ',', 4],[273.0, -1, ',', 4],[307.0, 2, 'D', 4],[338.0, 2, 'D', 5]

Sb
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91076, 91076)
 Motivated by recently-fabricated Sbmonolayer, we systematically investigate the thermoelectric properties ofbeta-As, Sb and Bi monolayers by combining the first-principles calculationsand semiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, -1, ',', 4],[270.0, -1, ',', 4],[304.0, 2, 'D', 4],[335.0, 2, 'D', 5]

Bi
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91080, 91080)
 Motivated by recently-fabricated Sbmonolayer, we systematically investigate the thermoelectric properties ofbeta-As, Sb and Bi monolayers by combining the first-principles calculationsand semiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, -1, ',', 4],[266.0, -1, ',', 4],[300.0, 2, 'D', 4],[331.0, 2, 'D', 5]

(SOC)
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91131, 91135)
 The generalized gradientapproximation (GGA) plus spin-orbit coupling (SOC) is adopted for the electronpart, and GGA is employed for the phonon part.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, -1, ',', 3],[211.0, -1, ',', 3],[245.0, 2, 'D', 3],[276.0, 2, 'D', 4]

SOC
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91178, 91180)
 It is found that SOC hasimportant influences on their electronic structures, especially for Bimonolayer, which can induce observable SOC effects on electronic transportcoefficients.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, -1, ',', 2],[166.0, -1, ',', 2],[200.0, 2, 'D', 2],[231.0, 2, 'D', 3]

Bi
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91202, 91202)
 It is found that SOC hasimportant influences on their electronic structures, especially for Bimonolayer, which can induce observable SOC effects on electronic transportcoefficients.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, -1, ',', 2],[144.0, -1, ',', 2],[178.0, 2, 'D', 2],[209.0, 2, 'D', 3]

SOC
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91216, 91218)
 It is found that SOC hasimportant influences on their electronic structures, especially for Bimonolayer, which can induce observable SOC effects on electronic transportcoefficients.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, -1, ',', 2],[128.0, -1, ',', 2],[162.0, 2, 'D', 2],[193.0, 2, 'D', 3]

SOC
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91237, 91239)
 More specifically, SOC not only has detrimental influences onelectronic transport coefficients, but also produces enhanced effects.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, -1, ',', 1],[107.0, -1, ',', 1],[141.0, 2, 'D', 1],[172.0, 2, 'D', 2]

As
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91289, 91289)
 Thecalculated lattice thermal conductivity decreases gradually from As to Bimonolayer, and the corresponding room-temperature sheet thermal conductance is161.10 mathrmW K-1, 46.62 mathrmW K-1 and 16.02 mathrmWK-1, which can be converted into common lattice thermal conductivity bydividing by the thickness of 2D material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, -1, ',', 0],[57.0, -1, ',', 0],[91.0, 2, 'D', 0],[122.0, 2, 'D', 1]

Bi
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91293, 91293)
 Thecalculated lattice thermal conductivity decreases gradually from As to Bimonolayer, and the corresponding room-temperature sheet thermal conductance is161.10 mathrmW K-1, 46.62 mathrmW K-1 and 16.02 mathrmWK-1, which can be converted into common lattice thermal conductivity bydividing by the thickness of 2D material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, -1, ',', 0],[53.0, -1, ',', 0],[87.0, 2, 'D', 0],[118.0, 2, 'D', 1]

W
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91321, 91321)
 Thecalculated lattice thermal conductivity decreases gradually from As to Bimonolayer, and the corresponding room-temperature sheet thermal conductance is161.10 mathrmW K-1, 46.62 mathrmW K-1 and 16.02 mathrmWK-1, which can be converted into common lattice thermal conductivity bydividing by the thickness of 2D material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, -1, ',', 0],[25.0, -1, ',', 0],[59.0, 2, 'D', 0],[90.0, 2, 'D', 1]

K
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91323, 91323)
 Thecalculated lattice thermal conductivity decreases gradually from As to Bimonolayer, and the corresponding room-temperature sheet thermal conductance is161.10 mathrmW K-1, 46.62 mathrmW K-1 and 16.02 mathrmWK-1, which can be converted into common lattice thermal conductivity bydividing by the thickness of 2D material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, -1, ',', 0],[23.0, -1, ',', 0],[57.0, 2, 'D', 0],[88.0, 2, 'D', 1]

W
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91331, 91331)
 Thecalculated lattice thermal conductivity decreases gradually from As to Bimonolayer, and the corresponding room-temperature sheet thermal conductance is161.10 mathrmW K-1, 46.62 mathrmW K-1 and 16.02 mathrmWK-1, which can be converted into common lattice thermal conductivity bydividing by the thickness of 2D material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, -1, ',', 0],[15.0, -1, ',', 0],[49.0, 2, 'D', 0],[80.0, 2, 'D', 1]

K
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91333, 91333)
 Thecalculated lattice thermal conductivity decreases gradually from As to Bimonolayer, and the corresponding room-temperature sheet thermal conductance is161.10 mathrmW K-1, 46.62 mathrmW K-1 and 16.02 mathrmWK-1, which can be converted into common lattice thermal conductivity bydividing by the thickness of 2D material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, -1, ',', 0],[13.0, -1, ',', 0],[47.0, 2, 'D', 0],[78.0, 2, 'D', 1]

W
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91342, 91342)
 Thecalculated lattice thermal conductivity decreases gradually from As to Bimonolayer, and the corresponding room-temperature sheet thermal conductance is161.10 mathrmW K-1, 46.62 mathrmW K-1 and 16.02 mathrmWK-1, which can be converted into common lattice thermal conductivity bydividing by the thickness of 2D material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, -1, ',', 0],[4.0, -1, ',', 0],[38.0, 2, 'D', 0],[69.0, 2, 'D', 1]

K
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91345, 91345)
 Thecalculated lattice thermal conductivity decreases gradually from As to Bimonolayer, and the corresponding room-temperature sheet thermal conductance is161.10 mathrmW K-1, 46.62 mathrmW K-1 and 16.02 mathrmWK-1, which can be converted into common lattice thermal conductivity bydividing by the thickness of 2D material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, -1, ',', 0],[1.0, -1, ',', 0],[35.0, 2, 'D', 0],[66.0, 2, 'D', 1]

Bi
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91395, 91395)
 The sheet thermal conductance of Bimonolayer is lower than one of other 2D materials, such as semiconductingtransition-metal dichalcogenide monolayers and orthorhombic group IV-VImonolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, -1, ',', 1],[49.0, -1, ',', 1],[15.0, 2, 'D', 1],[16.0, 2, 'D', 0]

IV
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91437, 91438)
 The sheet thermal conductance of Bimonolayer is lower than one of other 2D materials, such as semiconductingtransition-metal dichalcogenide monolayers and orthorhombic group IV-VImonolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, -1, ',', 1],[91.0, -1, ',', 1],[57.0, 2, 'D', 1],[26.0, 2, 'D', 0]

VI
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91440, 91441)
 The sheet thermal conductance of Bimonolayer is lower than one of other 2D materials, such as semiconductingtransition-metal dichalcogenide monolayers and orthorhombic group IV-VImonolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, -1, ',', 1],[94.0, -1, ',', 1],[60.0, 2, 'D', 1],[29.0, 2, 'D', 0]

As
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91517, 91517)
 It is found that the n<missing VAR>-type doping hasmore excellent thermoelectric properties than p<missing VAR>-type doping for As and Bimonolayer, while the comparative ZT between n<missing VAR>- and p<missing VAR>-type doping is observedin Bi monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, -1, ',', 3],[171.0, -1, ',', 3],[137.0, 2, 'D', 3],[106.0, 2, 'D', 2]

Bi
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91521, 91521)
 It is found that the n<missing VAR>-type doping hasmore excellent thermoelectric properties than p<missing VAR>-type doping for As and Bimonolayer, while the comparative ZT between n<missing VAR>- and p<missing VAR>-type doping is observedin Bi monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, -1, ',', 3],[175.0, -1, ',', 3],[141.0, 2, 'D', 3],[110.0, 2, 'D', 2]

Bi
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91556, 91556)
 It is found that the n<missing VAR>-type doping hasmore excellent thermoelectric properties than p<missing VAR>-type doping for As and Bimonolayer, while the comparative ZT between n<missing VAR>- and p<missing VAR>-type doping is observedin Bi monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, -1, ',', 3],[210.0, -1, ',', 3],[176.0, 2, 'D', 3],[145.0, 2, 'D', 2]

V
###Thermoelectric properties of $β$-As, Sb and Bi monolayers|Dong-Chen Zhang,Ai-Xia Zhang,San-Dong Guo###
(91602, 91602)
 These results can stimulate further experimental works to openthe new field for thermoelectric devices based on monolayer of group-VAelements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, -1, ',', 4],[256.0, -1, ',', 4],[222.0, 2, 'D', 4],[191.0, 2, 'D', 3]

TeI
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91625, 91626)
Potential 2D thermoelectric materials ATeI (ASb and Bi) monolayers from a first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'D', 0],[259.0, 2, 'D', 4],[576.0, 1.11, 'for', 9],[630.0, 2, 'D', 10]

Sb
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91630, 91630)
Potential 2D thermoelectric materials ATeI (ASb and Bi) monolayers from a first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'D', 0],[255.0, 2, 'D', 4],[572.0, 1.11, 'for', 9],[626.0, 2, 'D', 10]

Bi
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91634, 91634)
Potential 2D thermoelectric materials ATeI (ASb and Bi) monolayers from a first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, 'D', 0],[251.0, 2, 'D', 4],[568.0, 1.11, 'for', 9],[622.0, 2, 'D', 10]

TeI
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91724, 91725)
 Here, the thermoelectricproperties of ATeI (ASb and Bi) monolayers are systematically investigated,based on semiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, 'D', 2],[160.0, 2, 'D', 2],[477.0, 1.11, 'for', 7],[531.0, 2, 'D', 8]

Sb
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91729, 91729)
 Here, the thermoelectricproperties of ATeI (ASb and Bi) monolayers are systematically investigated,based on semiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2, 'D', 2],[156.0, 2, 'D', 2],[473.0, 1.11, 'for', 7],[527.0, 2, 'D', 8]

Bi
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91733, 91733)
 Here, the thermoelectricproperties of ATeI (ASb and Bi) monolayers are systematically investigated,based on semiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2, 'D', 2],[152.0, 2, 'D', 2],[469.0, 1.11, 'for', 7],[523.0, 2, 'D', 8]

(SOC)
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91774, 91778)
 It is found that spin-orbitcoupling (SOC) has important effects on electronic transport coefficients inp<missing VAR>-type doping, but neglectful influences on n<missing VAR>-type ones.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 2, 'D', 3],[107.0, 2, 'D', 1],[424.0, 1.11, 'for', 6],[478.0, 2, 'D', 7]

W
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91837, 91837)
 The room-temperaturesheet thermal conductance is 14.2 mathrmW K-1 for SbTeI and 12.6mathrmW K-1 for BiTeI, which are lower than one of most well-known 2Dmaterials, such as transition-metal dichalcogenide, group IV-VI, group-VA andgroup-IV monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 2, 'D', 4],[48.0, 2, 'D', 0],[365.0, 1.11, 'for', 5],[419.0, 2, 'D', 6]

K
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91839, 91839)
 The room-temperaturesheet thermal conductance is 14.2 mathrmW K-1 for SbTeI and 12.6mathrmW K-1 for BiTeI, which are lower than one of most well-known 2Dmaterials, such as transition-metal dichalcogenide, group IV-VI, group-VA andgroup-IV monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 2, 'D', 4],[46.0, 2, 'D', 0],[363.0, 1.11, 'for', 5],[417.0, 2, 'D', 6]

SbTeI
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91845, 91847)
 The room-temperaturesheet thermal conductance is 14.2 mathrmW K-1 for SbTeI and 12.6mathrmW K-1 for BiTeI, which are lower than one of most well-known 2Dmaterials, such as transition-metal dichalcogenide, group IV-VI, group-VA andgroup-IV monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 2, 'D', 4],[38.0, 2, 'D', 0],[355.0, 1.11, 'for', 5],[409.0, 2, 'D', 6]

W
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91855, 91855)
 The room-temperaturesheet thermal conductance is 14.2 mathrmW K-1 for SbTeI and 12.6mathrmW K-1 for BiTeI, which are lower than one of most well-known 2Dmaterials, such as transition-metal dichalcogenide, group IV-VI, group-VA andgroup-IV monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 2, 'D', 4],[30.0, 2, 'D', 0],[347.0, 1.11, 'for', 5],[401.0, 2, 'D', 6]

K
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91857, 91857)
 The room-temperaturesheet thermal conductance is 14.2 mathrmW K-1 for SbTeI and 12.6mathrmW K-1 for BiTeI, which are lower than one of most well-known 2Dmaterials, such as transition-metal dichalcogenide, group IV-VI, group-VA andgroup-IV monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, 'D', 4],[28.0, 2, 'D', 0],[345.0, 1.11, 'for', 5],[399.0, 2, 'D', 6]

BiTeI
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91863, 91865)
 The room-temperaturesheet thermal conductance is 14.2 mathrmW K-1 for SbTeI and 12.6mathrmW K-1 for BiTeI, which are lower than one of most well-known 2Dmaterials, such as transition-metal dichalcogenide, group IV-VI, group-VA andgroup-IV monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 2, 'D', 4],[20.0, 2, 'D', 0],[337.0, 1.11, 'for', 5],[391.0, 2, 'D', 6]

IV
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91904, 91905)
 The room-temperaturesheet thermal conductance is 14.2 mathrmW K-1 for SbTeI and 12.6mathrmW K-1 for BiTeI, which are lower than one of most well-known 2Dmaterials, such as transition-metal dichalcogenide, group IV-VI, group-VA andgroup-IV monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 2, 'D', 4],[19.0, 2, 'D', 0],[297.0, 1.11, 'for', 5],[351.0, 2, 'D', 6]

VI
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91907, 91908)
 The room-temperaturesheet thermal conductance is 14.2 mathrmW K-1 for SbTeI and 12.6mathrmW K-1 for BiTeI, which are lower than one of most well-known 2Dmaterials, such as transition-metal dichalcogenide, group IV-VI, group-VA andgroup-IV monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 2, 'D', 4],[22.0, 2, 'D', 0],[294.0, 1.11, 'for', 5],[348.0, 2, 'D', 6]

V
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91913, 91913)
 The room-temperaturesheet thermal conductance is 14.2 mathrmW K-1 for SbTeI and 12.6mathrmW K-1 for BiTeI, which are lower than one of most well-known 2Dmaterials, such as transition-metal dichalcogenide, group IV-VI, group-VA andgroup-IV monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 2, 'D', 4],[28.0, 2, 'D', 0],[289.0, 1.11, 'for', 5],[343.0, 2, 'D', 6]

IV
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91921, 91922)
 The room-temperaturesheet thermal conductance is 14.2 mathrmW K-1 for SbTeI and 12.6mathrmW K-1 for BiTeI, which are lower than one of most well-known 2Dmaterials, such as transition-metal dichalcogenide, group IV-VI, group-VA andgroup-IV monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 2, 'D', 4],[36.0, 2, 'D', 0],[280.0, 1.11, 'for', 5],[334.0, 2, 'D', 6]

TeI
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91958, 91959)
 By analyzing group velocities and phonon lifetimes, thevery low sheet thermal conductance of ATeI (ASb and Bi) monolayers is mainlydue to small group velocities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 2, 'D', 5],[73.0, 2, 'D', 1],[243.0, 1.11, 'for', 4],[297.0, 2, 'D', 5]

Sb
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91963, 91963)
 By analyzing group velocities and phonon lifetimes, thevery low sheet thermal conductance of ATeI (ASb and Bi) monolayers is mainlydue to small group velocities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 2, 'D', 5],[78.0, 2, 'D', 1],[239.0, 1.11, 'for', 4],[293.0, 2, 'D', 5]

Bi
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(91967, 91967)
 By analyzing group velocities and phonon lifetimes, thevery low sheet thermal conductance of ATeI (ASb and Bi) monolayers is mainlydue to small group velocities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 2, 'D', 5],[82.0, 2, 'D', 1],[235.0, 1.11, 'for', 4],[289.0, 2, 'D', 5]

P
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(92079, 92079)
 According to cumulative lattice thermal conductivity with respect tophonon mean free path (M<missing VAR>FP), it is difficulty to further reduce lattice thermalconductivity by nanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[461.0, 2, 'D', 7],[194.0, 2, 'D', 3],[123.0, 1.11, 'for', 2],[177.0, 2, 'D', 3]

TeI
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(92127, 92128)
 Finally, possible thermoelectric figure ofmerit ZT of ATeI (ASb and Bi) monolayers are calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[509.0, 2, 'D', 8],[242.0, 2, 'D', 4],[74.0, 1.11, 'for', 1],[128.0, 2, 'D', 2]

Sb
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(92132, 92132)
 Finally, possible thermoelectric figure ofmerit ZT of ATeI (ASb and Bi) monolayers are calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[514.0, 2, 'D', 8],[247.0, 2, 'D', 4],[70.0, 1.11, 'for', 1],[124.0, 2, 'D', 2]

Bi
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(92136, 92136)
 Finally, possible thermoelectric figure ofmerit ZT of ATeI (ASb and Bi) monolayers are calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[518.0, 2, 'D', 8],[251.0, 2, 'D', 4],[66.0, 1.11, 'for', 1],[120.0, 2, 'D', 2]

SbTeI
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(92204, 92206)
 It is found thatthe p<missing VAR>-type doping has more excellent thermoelectric properties than n<missing VAR>-typedoping, and at room temperature, the peak ZT can reach 1.11 for SbTeI and0.87 for BiTeI, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[586.0, 2, 'D', 9],[319.0, 2, 'D', 5],[2.0, 1.11, 'for', 0],[50.0, 2, 'D', 1]

BiTeI
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(92215, 92217)
 It is found thatthe p<missing VAR>-type doping has more excellent thermoelectric properties than n<missing VAR>-typedoping, and at room temperature, the peak ZT can reach 1.11 for SbTeI and0.87 for BiTeI, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[597.0, 2, 'D', 9],[330.0, 2, 'D', 5],[13.0, 1.11, 'for', 0],[39.0, 2, 'D', 1]

TeI
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(92236, 92237)
 These results make us believe that ATeI (ASb andBi) monolayers may be potential 2D thermoelectric materials, and can stimulatefurther experimental works to synthesize these monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[618.0, 2, 'D', 10],[351.0, 2, 'D', 6],[34.0, 1.11, 'for', 1],[19.0, 2, 'D', 0]

Sb
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(92241, 92241)
 These results make us believe that ATeI (ASb andBi) monolayers may be potential 2D thermoelectric materials, and can stimulatefurther experimental works to synthesize these monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[623.0, 2, 'D', 10],[356.0, 2, 'D', 6],[39.0, 1.11, 'for', 1],[15.0, 2, 'D', 0]

Bi
###Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study|San-Dong Guo,Ai-Xia Zhang###
(92246, 92246)
 These results make us believe that ATeI (ASb andBi) monolayers may be potential 2D thermoelectric materials, and can stimulatefurther experimental works to synthesize these monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[628.0, 2, 'D', 10],[361.0, 2, 'D', 6],[44.0, 1.11, 'for', 1],[10.0, 2, 'D', 0]

TiNiSn
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92307, 92309)
First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 18, 'valence', 0],[79.0, 18, 'valence', 1],[126.0, 18, 'VEC', 2],[471.0, 550, ',', 5],[637.0, 18, 'VEC', 7]

In
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92327, 92327)
 In this study, we have reported electronic structure, lattice dynamics, andthermoelectric (TE) transport properties of a new family of pentanarysubstituted TiNiSn systems using the 18 valence electron count (VE<missing VAR>C) rule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 18, 'valence', 1],[61.0, 18, 'valence', 0],[108.0, 18, 'VEC', 1],[453.0, 550, ',', 4],[619.0, 18, 'VEC', 6]

TiNiSn
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92379, 92381)
 In this study, we have reported electronic structure, lattice dynamics, andthermoelectric (TE) transport properties of a new family of pentanarysubstituted TiNiSn systems using the 18 valence electron count (VE<missing VAR>C) rule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 18, 'valence', 1],[7.0, 18, 'valence', 0],[54.0, 18, 'VEC', 1],[399.0, 550, ',', 4],[565.0, 18, 'VEC', 6]

V
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92395, 92395)
 In this study, we have reported electronic structure, lattice dynamics, andthermoelectric (TE) transport properties of a new family of pentanarysubstituted TiNiSn systems using the 18 valence electron count (VE<missing VAR>C) rule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 18, 'valence', 1],[7.0, 18, 'valence', 0],[40.0, 18, 'VEC', 1],[385.0, 550, ',', 4],[551.0, 18, 'VEC', 6]

C
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92397, 92397)
 In this study, we have reported electronic structure, lattice dynamics, andthermoelectric (TE) transport properties of a new family of pentanarysubstituted TiNiSn systems using the 18 valence electron count (VE<missing VAR>C) rule.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 18, 'valence', 1],[9.0, 18, 'valence', 0],[38.0, 18, 'VEC', 1],[383.0, 550, ',', 4],[549.0, 18, 'VEC', 6]

Ti
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92447, 92447)
 Fromour calculated band structures and density of states, we show that bypreserving the 18 VEC through aliovalent substitutions at the Ti site of TiNiSnsemiconducting behavior can be achieved, and hence one can tune the bandstructure and band gap to maximize the thermoelectric figure of merit (ZT)value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 18, 'valence', 2],[59.0, 18, 'valence', 1],[12.0, 18, 'VEC', 0],[333.0, 550, ',', 3],[499.0, 18, 'VEC', 5]

TiNiSn
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92453, 92455)
 Fromour calculated band structures and density of states, we show that bypreserving the 18 VEC through aliovalent substitutions at the Ti site of TiNiSnsemiconducting behavior can be achieved, and hence one can tune the bandstructure and band gap to maximize the thermoelectric figure of merit (ZT)value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 18, 'valence', 2],[65.0, 18, 'valence', 1],[18.0, 18, 'VEC', 0],[325.0, 550, ',', 3],[491.0, 18, 'VEC', 5]

TiNiSn
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92655, 92657)
 The calculated kappaL<missing VAR> valuesdecrease from parent TiNiSn to pentanary substituted TiNiSn systems as expecteddue to fluctuation in atomic mass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 18, 'valence', 4],[267.0, 18, 'valence', 3],[220.0, 18, 'VEC', 2],[123.0, 550, ',', 1],[289.0, 18, 'VEC', 3]

TiNiSn
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92665, 92667)
 The calculated kappaL<missing VAR> valuesdecrease from parent TiNiSn to pentanary substituted TiNiSn systems as expecteddue to fluctuation in atomic mass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 18, 'valence', 4],[277.0, 18, 'valence', 3],[230.0, 18, 'VEC', 2],[113.0, 550, ',', 1],[279.0, 18, 'VEC', 3]

Hf
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92698, 92698)
 The calculated kappaL<missing VAR> for Hfcontaining systems La0.25Hf0.5V0.25NiSn and non Hf containingsystem La0.25Zr0.5V0.25NiSn calculated from Phono3py (Slacks<missing VAR>equation) are found to be 0.37 (1.04) and 0.16 (0.95) W/m<missing VAR>K, at 550,K,respectively and the corresponding ZT value are found to be 0.54 (0.4) and 0.77(0.53).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 18, 'valence', 5],[310.0, 18, 'valence', 4],[263.0, 18, 'VEC', 3],[82.0, 550, ',', 0],[248.0, 18, 'VEC', 2]

La0.25Hf0.5V0.25NiSn
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92705, 92712)
 The calculated kappaL<missing VAR> for Hfcontaining systems La0.25Hf0.5V0.25NiSn and non Hf containingsystem La0.25Zr0.5V0.25NiSn calculated from Phono3py (Slacks<missing VAR>equation) are found to be 0.37 (1.04) and 0.16 (0.95) W/m<missing VAR>K, at 550,K,respectively and the corresponding ZT value are found to be 0.54 (0.4) and 0.77(0.53).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 18, 'valence', 5],[317.0, 18, 'valence', 4],[270.0, 18, 'VEC', 3],[68.0, 550, ',', 0],[234.0, 18, 'VEC', 2]

Hf
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92718, 92718)
 The calculated kappaL<missing VAR> for Hfcontaining systems La0.25Hf0.5V0.25NiSn and non Hf containingsystem La0.25Zr0.5V0.25NiSn calculated from Phono3py (Slacks<missing VAR>equation) are found to be 0.37 (1.04) and 0.16 (0.95) W/m<missing VAR>K, at 550,K,respectively and the corresponding ZT value are found to be 0.54 (0.4) and 0.77(0.53).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 18, 'valence', 5],[330.0, 18, 'valence', 4],[283.0, 18, 'VEC', 3],[62.0, 550, ',', 0],[228.0, 18, 'VEC', 2]

La0.25Zr0.5V0.25NiSn
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92725, 92732)
 The calculated kappaL<missing VAR> for Hfcontaining systems La0.25Hf0.5V0.25NiSn and non Hf containingsystem La0.25Zr0.5V0.25NiSn calculated from Phono3py (Slacks<missing VAR>equation) are found to be 0.37 (1.04) and 0.16 (0.95) W/m<missing VAR>K, at 550,K,respectively and the corresponding ZT value are found to be 0.54 (0.4) and 0.77(0.53).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 18, 'valence', 5],[337.0, 18, 'valence', 4],[290.0, 18, 'VEC', 3],[48.0, 550, ',', 0],[214.0, 18, 'VEC', 2]

W
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92772, 92772)
 The calculated kappaL<missing VAR> for Hfcontaining systems La0.25Hf0.5V0.25NiSn and non Hf containingsystem La0.25Zr0.5V0.25NiSn calculated from Phono3py (Slacks<missing VAR>equation) are found to be 0.37 (1.04) and 0.16 (0.95) W/m<missing VAR>K, at 550,K,respectively and the corresponding ZT value are found to be 0.54 (0.4) and 0.77(0.53).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[452.0, 18, 'valence', 5],[384.0, 18, 'valence', 4],[337.0, 18, 'VEC', 3],[8.0, 550, ',', 0],[174.0, 18, 'VEC', 2]

K
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92775, 92775)
 The calculated kappaL<missing VAR> for Hfcontaining systems La0.25Hf0.5V0.25NiSn and non Hf containingsystem La0.25Zr0.5V0.25NiSn calculated from Phono3py (Slacks<missing VAR>equation) are found to be 0.37 (1.04) and 0.16 (0.95) W/m<missing VAR>K, at 550,K,respectively and the corresponding ZT value are found to be 0.54 (0.4) and 0.77(0.53).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[455.0, 18, 'valence', 5],[387.0, 18, 'valence', 4],[340.0, 18, 'VEC', 3],[5.0, 550, ',', 0],[171.0, 18, 'VEC', 2]

K
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92782, 92782)
 The calculated kappaL<missing VAR> for Hfcontaining systems La0.25Hf0.5V0.25NiSn and non Hf containingsystem La0.25Zr0.5V0.25NiSn calculated from Phono3py (Slacks<missing VAR>equation) are found to be 0.37 (1.04) and 0.16 (0.95) W/m<missing VAR>K, at 550,K,respectively and the corresponding ZT value are found to be 0.54 (0.4) and 0.77(0.53).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[462.0, 18, 'valence', 5],[394.0, 18, 'valence', 4],[347.0, 18, 'VEC', 3],[2.0, 550, ',', 0],[164.0, 18, 'VEC', 2]

La0.25Hf0.5V0.25NiSn
###First principle design of new thermoelectrics from TiNiSn based pentanary alloys based on 18 valence electron rule|Mukesh K. Choudhary,P. Ravindran###
(92851, 92858)
 Among the considered systems, the calculated phonon spectra and heatcapacity show that La0.25Hf0.5V0.25NiSn has moreoptical-acoustic band mixing which creates more phonon-phonon scatteringand hence lower the kappaL<missing VAR> value and maximizing the ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[531.0, 18, 'valence', 6],[463.0, 18, 'valence', 5],[416.0, 18, 'VEC', 4],[71.0, 550, ',', 1],[88.0, 18, 'VEC', 1]

FeGa3
###Effect of Chemical Doping on the Thermoelectric Properties of FeGa3|N. Haldolaarachchige,A. B. Karki,W. Adam Phelan,Y. M. Xiong,R. Jin,Julia Y. Chan,S. Stadler,D. P. Young###
(93418, 93420)
Effect of Chemical Doping on the Thermoelectric Properties of FeGa3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.2, 'eV', 2],[236.0, 390, 'K', 4]

FeGa3
###Effect of Chemical Doping on the Thermoelectric Properties of FeGa3|N. Haldolaarachchige,A. B. Karki,W. Adam Phelan,Y. M. Xiong,R. Jin,Julia Y. Chan,S. Stadler,D. P. Young###
(93444, 93446)
 Thermoelectric properties of the chemically-doped intermetallic narrow-bandsemiconductor FeGa3 are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.2, 'eV', 1],[210.0, 390, 'K', 3]

S
###Effect of Chemical Doping on the Thermoelectric Properties of FeGa3|N. Haldolaarachchige,A. B. Karki,W. Adam Phelan,Y. M. Xiong,R. Jin,Julia Y. Chan,S. Stadler,D. P. Young###
(93520, 93520)
 The parent compound shows semiconductor-likebehavior with a small band gap (Eg  0.2 eV), a carrier density of  10(18)cm-3 and, a large n<missing VAR>-type Seebeck coefficient (S  -400 mu V/K) at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 0.2, 'eV', 0],[136.0, 390, 'K', 2]

K
###Effect of Chemical Doping on the Thermoelectric Properties of FeGa3|N. Haldolaarachchige,A. B. Karki,W. Adam Phelan,Y. M. Xiong,R. Jin,Julia Y. Chan,S. Stadler,D. P. Young###
(93530, 93530)
 The parent compound shows semiconductor-likebehavior with a small band gap (Eg  0.2 eV), a carrier density of  10(18)cm-3 and, a large n<missing VAR>-type Seebeck coefficient (S  -400 mu V/K) at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.2, 'eV', 0],[126.0, 390, 'K', 2]

K
###Effect of Chemical Doping on the Thermoelectric Properties of FeGa3|N. Haldolaarachchige,A. B. Karki,W. Adam Phelan,Y. M. Xiong,R. Jin,Julia Y. Chan,S. Stadler,D. P. Young###
(93604, 93604)
 Hall effect measurements indicate that chemical dopingsignificantly increases the carrier density, resulting in a metallic state,while the Seebeck coefficient still remains fairly large ( -150 mu V/K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0.2, 'eV', 1],[52.0, 390, 'K', 1]

S2
###Effect of Chemical Doping on the Thermoelectric Properties of FeGa3|N. Haldolaarachchige,A. B. Karki,W. Adam Phelan,Y. M. Xiong,R. Jin,Julia Y. Chan,S. Stadler,D. P. Young###
(93618, 93619)
 Thelargest power factor (S2/rho  62 mu W/m<missing VAR> K2) and corresponding figure ofmerit (ZT  0.013) at 390 K were observed for Fe0.99Co0.01(Ga0.997Ge0.003)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.2, 'eV', 2],[37.0, 390, 'K', 0]

W
###Effect of Chemical Doping on the Thermoelectric Properties of FeGa3|N. Haldolaarachchige,A. B. Karki,W. Adam Phelan,Y. M. Xiong,R. Jin,Julia Y. Chan,S. Stadler,D. P. Young###
(93628, 93628)
 Thelargest power factor (S2/rho  62 mu W/m<missing VAR> K2) and corresponding figure ofmerit (ZT  0.013) at 390 K were observed for Fe0.99Co0.01(Ga0.997Ge0.003)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.2, 'eV', 2],[28.0, 390, 'K', 0]

K2
###Effect of Chemical Doping on the Thermoelectric Properties of FeGa3|N. Haldolaarachchige,A. B. Karki,W. Adam Phelan,Y. M. Xiong,R. Jin,Julia Y. Chan,S. Stadler,D. P. Young###
(93632, 93633)
 Thelargest power factor (S2/rho  62 mu W/m<missing VAR> K2) and corresponding figure ofmerit (ZT  0.013) at 390 K were observed for Fe0.99Co0.01(Ga0.997Ge0.003)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.2, 'eV', 2],[23.0, 390, 'K', 0]

Fe0.99Co0.01(Ga0.997Ge0.003)3
###Effect of Chemical Doping on the Thermoelectric Properties of FeGa3|N. Haldolaarachchige,A. B. Karki,W. Adam Phelan,Y. M. Xiong,R. Jin,Julia Y. Chan,S. Stadler,D. P. Young###
(93664, 93674)
 Thelargest power factor (S2/rho  62 mu W/m<missing VAR> K2) and corresponding figure ofmerit (ZT  0.013) at 390 K were observed for Fe0.99Co0.01(Ga0.997Ge0.003)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2475,0.0025,0,0,0,0.74775,0.0022500000000000003,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 0.2, 'eV', 2],[8.0, 390, 'K', 0]

FeSb2
###Phonon Drag Effect in Nanocomposite FeSb2|Mani Pokharel,Huaizhou Zhao,Kevin Lukas,Bogdan Mihaila,Zhifeng Ren,Cyril Opeil###
(93695, 93697)
Phonon Drag Effect in Nanocomposite FeSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSb2
###Phonon Drag Effect in Nanocomposite FeSb2|Mani Pokharel,Huaizhou Zhao,Kevin Lukas,Bogdan Mihaila,Zhifeng Ren,Cyril Opeil###
(93723, 93725)
 We study the temperature dependence of thermoelectric transport properties offour FeSb2 nanocomposite samples with different grain sizes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Phonon Drag Effect in Nanocomposite FeSb2|Mani Pokharel,Huaizhou Zhao,Kevin Lukas,Bogdan Mihaila,Zhifeng Ren,Cyril Opeil###
(93808, 93808)
 As the grain size decreases, theincreased phonon scattering at the grain boundaries leads to a suppression ofthe phonon-drag effect, resulting in a much smaller peak value of the Seebeckcoefficient in the nanostructured bulk materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Phonon Drag Effect in Nanocomposite FeSb2|Mani Pokharel,Huaizhou Zhao,Kevin Lukas,Bogdan Mihaila,Zhifeng Ren,Cyril Opeil###
(93890, 93890)
 As a consequence, the ZTvalues are not improved significantly even though the thermal conductivity isdrastically reduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CSN)
###Thermal Conductivity of Core-Shell Based Nanocomposites for Enhancing Thermoelectric ZT|S. J. Poon,A. S. Petersen,Di Wu###
(94073, 94077)
 Extended from theaverage-T<missing VAR>-matrix single-particle approximation, DEM incorporates interparticleeffect essential for the study of core-shell nanocomposites (CSN).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CSN
###Thermal Conductivity of Core-Shell Based Nanocomposites for Enhancing Thermoelectric ZT|S. J. Poon,A. S. Petersen,Di Wu###
(94102, 94104)
Interparticle boundary scattering in addition to intraparticle boundaryscattering in CSN is found to add to the reduction of thermal conductivity ofnanocomposites.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CSN
###Thermal Conductivity of Core-Shell Based Nanocomposites for Enhancing Thermoelectric ZT|S. J. Poon,A. S. Petersen,Di Wu###
(94135, 94137)
 Thus, CSN hold the promise of improving the thermoelectricdimensionless figure of merit ZT above that of monolithic nano-bulk phases.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Thermal Conductivity of Core-Shell Based Nanocomposites for Enhancing Thermoelectric ZT|S. J. Poon,A. S. Petersen,Di Wu###
(94180, 94180)
 Siand SiGe based CSN serve as illustrative examples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiGe
###Thermal Conductivity of Core-Shell Based Nanocomposites for Enhancing Thermoelectric ZT|S. J. Poon,A. S. Petersen,Di Wu###
(94185, 94186)
 Siand SiGe based CSN serve as illustrative examples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CSN
###Thermal Conductivity of Core-Shell Based Nanocomposites for Enhancing Thermoelectric ZT|S. J. Poon,A. S. Petersen,Di Wu###
(94190, 94192)
 Siand SiGe based CSN serve as illustrative examples.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C60
###Thermoelectric properties of doped small molecule organic semiconductor films|Torben Menke###
(94292, 94293)
 C60 n<missing VAR>-doped by Cr2(hpp)4 or o<missing VAR>-MeO-DMBI-I arefound to be the most promising material systems with a maximum of ZTtextM<missing VAR> 0.069 at TtextM  40degC, assuming a doping-independent thermalconductivity due to phonon-based heat transport.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.069, 'at', 0],[106.0, 16, '%', 1]

Cr2
###Thermoelectric properties of doped small molecule organic semiconductor films|Torben Menke###
(94301, 94302)
 C60 n<missing VAR>-doped by Cr2(hpp)4 or o<missing VAR>-MeO-DMBI-I arefound to be the most promising material systems with a maximum of ZTtextM<missing VAR> 0.069 at TtextM  40degC, assuming a doping-independent thermalconductivity due to phonon-based heat transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0.069, 'at', 0],[97.0, 16, '%', 1]

O
###Thermoelectric properties of doped small molecule organic semiconductor films|Torben Menke###
(94313, 94313)
 C60 n<missing VAR>-doped by Cr2(hpp)4 or o<missing VAR>-MeO-DMBI-I arefound to be the most promising material systems with a maximum of ZTtextM<missing VAR> 0.069 at TtextM  40degC, assuming a doping-independent thermalconductivity due to phonon-based heat transport.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.069, 'at', 0],[86.0, 16, '%', 1]

BI
###Thermoelectric properties of doped small molecule organic semiconductor films|Torben Menke###
(94317, 94318)
 C60 n<missing VAR>-doped by Cr2(hpp)4 or o<missing VAR>-MeO-DMBI-I arefound to be the most promising material systems with a maximum of ZTtextM<missing VAR> 0.069 at TtextM  40degC, assuming a doping-independent thermalconductivity due to phonon-based heat transport.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 0.069, 'at', 0],[81.0, 16, '%', 1]

I
###Thermoelectric properties of doped small molecule organic semiconductor films|Torben Menke###
(94320, 94320)
 C60 n<missing VAR>-doped by Cr2(hpp)4 or o<missing VAR>-MeO-DMBI-I arefound to be the most promising material systems with a maximum of ZTtextM<missing VAR> 0.069 at TtextM  40degC, assuming a doping-independent thermalconductivity due to phonon-based heat transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.069, 'at', 0],[79.0, 16, '%', 1]

C
###Thermoelectric properties of doped small molecule organic semiconductor films|Torben Menke###
(94364, 94364)
 C60 n<missing VAR>-doped by Cr2(hpp)4 or o<missing VAR>-MeO-DMBI-I arefound to be the most promising material systems with a maximum of ZTtextM<missing VAR> 0.069 at TtextM  40degC, assuming a doping-independent thermalconductivity due to phonon-based heat transport.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0.069, 'at', 0],[35.0, 16, '%', 1]

P
###Thermoelectric properties of doped small molecule organic semiconductor films|Torben Menke###
(94428, 94428)
 This value is 16% of thecurrent record reported for optimized devices employing the doped polymerPEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0.069, 'at', 1],[29.0, 16, '%', 0]

O
###Thermoelectric properties of doped small molecule organic semiconductor films|Torben Menke###
(94431, 94431)
 This value is 16% of thecurrent record reported for optimized devices employing the doped polymerPEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.069, 'at', 1],[32.0, 16, '%', 0]

PSS
###Thermoelectric properties of doped small molecule organic semiconductor films|Torben Menke###
(94433, 94435)
 This value is 16% of thecurrent record reported for optimized devices employing the doped polymerPEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 0.069, 'at', 1],[34.0, 16, '%', 0]

As
###Graphdiyne: a two-dimensional thermoelectric material with high figure of merit|L. Sun,P. H. Jiang,H. J. Liu,D. D. Fan,J. H. Liang,J. Wei,L. Cheng,J. Zhang,J. Shi###
(94469, 94469)
 As a new carbon allotrope, the recently fabricated graphdiyne has attractedmuch attention due to its interesting two-dimensional character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 3.0, 'and', 2],[169.0, 4.8, ',', 2]

At
###Graphdiyne: a two-dimensional thermoelectric material with high figure of merit|L. Sun,P. H. Jiang,H. J. Liu,D. D. Fan,J. H. Liang,J. Wei,L. Cheng,J. Zhang,J. Shi###
(94577, 94577)
 At a carrierconcentration of 2.741011/cm2 for holes and 1.621011/cm2 for electrons,the room temperature ZT value of graphdiyne can be optimized to 3.0 and 4.8,respectively, which makes it an ideal system to realize the concept ofphonon-glass and electron-crystal in the thermoelectric community.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 3.0, 'and', 0],[61.0, 4.8, ',', 0]

B
###High-temperature oxide thermoelectrics|Ichiro Terasaki###
(94844, 94844)
 This suggests that the same power factor can beobtained with a thermopower larger than 2k<missing VAR>B/e<missing VAR>, and also suggests areasonably high value of the dimensionless figure of merit ZT.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V/K
###High-temperature oxide thermoelectrics|Ichiro Terasaki###
(94915, 94917)
 We propose anoxide thermoelectric power generator by using materials having a thermopowerlarger than 300 muV/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SPS
###SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current|Wilfried Wunderlich,Takao Mori,Oksana Sologub###
(94928, 94930)
SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 650, 'K', 1],[95.0, -500, 'microV', 1],[136.0, 870, 'K', 2],[152.0, -80, 'microA', 2],[183.0, 1623, 'K', 2]

NaTaO3
###SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current|Wilfried Wunderlich,Takao Mori,Oksana Sologub###
(94934, 94937)
SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 650, 'K', 1],[88.0, -500, 'microV', 1],[129.0, 870, 'K', 2],[145.0, -80, 'microA', 2],[176.0, 1623, 'K', 2]

Fe2O3
###SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current|Wilfried Wunderlich,Takao Mori,Oksana Sologub###
(94939, 94942)
SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 650, 'K', 1],[83.0, -500, 'microV', 1],[124.0, 870, 'K', 2],[140.0, -80, 'microA', 2],[171.0, 1623, 'K', 2]

NaTaO3
###SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current|Wilfried Wunderlich,Takao Mori,Oksana Sologub###
(94961, 94964)
 NaTaO3-50wt% Fe2O3 composite ceramics showed a large Seebeck voltage of -300m<missing VAR>V at a temperature gradient of 650 K yielding a constant Seebeck coefficientof more than -500 microV/K over a wide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 650, 'K', 0],[61.0, -500, 'microV', 0],[102.0, 870, 'K', 1],[118.0, -80, 'microA', 1],[149.0, 1623, 'K', 1]

Fe2O3
###SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current|Wilfried Wunderlich,Takao Mori,Oksana Sologub###
(94970, 94973)
 NaTaO3-50wt% Fe2O3 composite ceramics showed a large Seebeck voltage of -300m<missing VAR>V at a temperature gradient of 650 K yielding a constant Seebeck coefficientof more than -500 microV/K over a wide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 650, 'K', 0],[52.0, -500, 'microV', 0],[93.0, 870, 'K', 1],[109.0, -80, 'microA', 1],[140.0, 1623, 'K', 1]

V
###SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current|Wilfried Wunderlich,Takao Mori,Oksana Sologub###
(94996, 94996)
 NaTaO3-50wt% Fe2O3 composite ceramics showed a large Seebeck voltage of -300m<missing VAR>V at a temperature gradient of 650 K yielding a constant Seebeck coefficientof more than -500 microV/K over a wide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 650, 'K', 0],[29.0, -500, 'microV', 0],[70.0, 870, 'K', 1],[86.0, -80, 'microA', 1],[117.0, 1623, 'K', 1]

K
###SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current|Wilfried Wunderlich,Takao Mori,Oksana Sologub###
(95027, 95027)
 NaTaO3-50wt% Fe2O3 composite ceramics showed a large Seebeck voltage of -300m<missing VAR>V at a temperature gradient of 650 K yielding a constant Seebeck coefficientof more than -500 microV/K over a wide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 650, 'K', 0],[2.0, -500, 'microV', 0],[39.0, 870, 'K', 1],[55.0, -80, 'microA', 1],[86.0, 1623, 'K', 1]

SPS
###SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current|Wilfried Wunderlich,Takao Mori,Oksana Sologub###
(95055, 95057)
 We report for thefirst time that SPS sintering at low temperature 870K could maintain theshort-circuit current of -80 microA, which makes this thermoelectric material apossible candidate for high-temperature applications up to 1623 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 650, 'K', 1],[30.0, -500, 'microV', 1],[9.0, 870, 'K', 0],[25.0, -80, 'microA', 0],[56.0, 1623, 'K', 0]

Fe2O3
###SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current|Wilfried Wunderlich,Takao Mori,Oksana Sologub###
(95137, 95140)
 The reasonfor the good performance is the interface between Fe2O3 and surrounding NaTaO3perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 650, 'K', 2],[112.0, -500, 'microV', 2],[71.0, 870, 'K', 1],[55.0, -80, 'microA', 1],[24.0, 1623, 'K', 1]

NaTaO3
###SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current|Wilfried Wunderlich,Takao Mori,Oksana Sologub###
(95146, 95149)
 The reasonfor the good performance is the interface between Fe2O3 and surrounding NaTaO3perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 650, 'K', 2],[121.0, -500, 'microV', 2],[80.0, 870, 'K', 1],[64.0, -80, 'microA', 1],[33.0, 1623, 'K', 1]

(SPS)
###SPS-Sintered NaTaO3-Fe2O3 Composite exhibits Large Seebeck Coefficient and Electric Current|Wilfried Wunderlich,Takao Mori,Oksana Sologub###
(95163, 95167)
 When spark-plasma sintering (SPS) is used, constitutional vacanciesdisappeared and the electric conductivity increases remarkably yielding ZT of0.016.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 650, 'K', 3],[138.0, -500, 'microV', 3],[97.0, 870, 'K', 2],[81.0, -80, 'microA', 2],[50.0, 1623, 'K', 2]

AgBiSe2
###Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of $p$-type AgBiSe$_2$|David Parker,Andrew F. May,David J. Singh###
(95498, 95501)
Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance The case of p<missing VAR>-type AgBiSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 1.5, 'in', 4]

AgBiSe2
###Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of $p$-type AgBiSe$_2$|David Parker,Andrew F. May,David J. Singh###
(95533, 95536)
 We study theoretically the effects of anisotropy on the thermoelectricperformance of p<missing VAR>-type AgBiSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 1.5, 'in', 3]

AgBiSe2
###Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of $p$-type AgBiSe$_2$|David Parker,Andrew F. May,David J. Singh###
(95659, 95662)
 Based on first principlescalculations we find a substantial anisotropy in the electronic structure,likely favorable for thermoelectric performance, in the valence bands of thehexagonal phase of the silver chalcogenide thermoelectric AgBiSe2, while theconduction bands are more isotropic, and in our experiments do not attain highperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1.5, 'in', 1]

AgBiSe2
###Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of $p$-type AgBiSe$_2$|David Parker,Andrew F. May,David J. Singh###
(95701, 95704)
 AgBiSe2 has already exhibited a ZT value of 1.5 in ahigh-temperature disordered fcc phase, but room-temperature performance has notbeen demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1.5, 'in', 0]

Bi2Te3
###Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of $p$-type AgBiSe$_2$|David Parker,Andrew F. May,David J. Singh###
(95820, 95823)
 We develop a theory for the ability of anisotropy todecouple the density-of-states and conductivity effective masses, pointing outthe influence of this effect in the high performance thermoelectricsBi2Te3 and PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 1.5, 'in', 1]

PbTe
###Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of $p$-type AgBiSe$_2$|David Parker,Andrew F. May,David J. Singh###
(95827, 95828)
 We develop a theory for the ability of anisotropy todecouple the density-of-states and conductivity effective masses, pointing outthe influence of this effect in the high performance thermoelectricsBi2Te3 and PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 1.5, 'in', 1]

AgBiSe2
###Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of $p$-type AgBiSe$_2$|David Parker,Andrew F. May,David J. Singh###
(95862, 95865)
 From our first principles and Boltzmann transportcalculations we estimate the performance of p<missing VAR>-type AgBiSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 1.5, 'in', 2]

BaSn2
###Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$|San-Dong Guo,Liang Qiu###
(95887, 95889)
Thermoelectric properties of topological insulator mathrmBaSn2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, -1, ',', 6],[436.0, 0.4, 'in', 8]

BaSn2
###Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$|San-Dong Guo,Liang Qiu###
(95896, 95898)
 Recently, mathrmBaSn2 is predicted to be a strong topological insulatorby the first-principle calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, -1, ',', 5],[427.0, 0.4, 'in', 7]

Bi2Te3
###Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$|San-Dong Guo,Liang Qiu###
(95964, 95967)
 It is well known that topologicalinsulator has a close connection to thermoelectric material, such asmathrmBi2Te3 family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, -1, ',', 4],[358.0, 0.4, 'in', 6]

In
###Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$|San-Dong Guo,Liang Qiu###
(95972, 95972)
 In this work, we investigate thermoelectricproperties of mathrmBaSn2 by the first-principles combined with Boltzmanntransport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, -1, ',', 3],[353.0, 0.4, 'in', 5]

BaSn2
###Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$|San-Dong Guo,Liang Qiu###
(95991, 95993)
 In this work, we investigate thermoelectricproperties of mathrmBaSn2 by the first-principles combined with Boltzmanntransport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, -1, ',', 3],[332.0, 0.4, 'in', 5]

(SOC)
###Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$|San-Dong Guo,Liang Qiu###
(96059, 96063)
 The electronic part is carried out by a modified Becke andJohnson (mBJ) exchange potential, including spin-orbit coupling (SOC), whilethe phonon part is performed using generalized gradient approximation (GGA).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, -1, ',', 2],[262.0, 0.4, 'in', 4]

BaSn2
###Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$|San-Dong Guo,Liang Qiu###
(96179, 96181)
 Calculated results show a verylow lattice thermal conductivity for mathrmBaSn2, and the correspondingaverage lattice thermal conductivity at room temperature is 1.69 mathrmWm<missing VAR>-1 K-1, which is comparable or lower than those of lead chalcogenidesand bismuth-tellurium systems as classic thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, -1, ',', 0],[144.0, 0.4, 'in', 2]

W
###Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$|San-Dong Guo,Liang Qiu###
(96210, 96210)
 Calculated results show a verylow lattice thermal conductivity for mathrmBaSn2, and the correspondingaverage lattice thermal conductivity at room temperature is 1.69 mathrmWm<missing VAR>-1 K-1, which is comparable or lower than those of lead chalcogenidesand bismuth-tellurium systems as classic thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, -1, ',', 0],[115.0, 0.4, 'in', 2]

K
###Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$|San-Dong Guo,Liang Qiu###
(96217, 96217)
 Calculated results show a verylow lattice thermal conductivity for mathrmBaSn2, and the correspondingaverage lattice thermal conductivity at room temperature is 1.69 mathrmWm<missing VAR>-1 K-1, which is comparable or lower than those of lead chalcogenidesand bismuth-tellurium systems as classic thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, -1, ',', 0],[108.0, 0.4, 'in', 2]

BaSn2
###Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$|San-Dong Guo,Liang Qiu###
(96386, 96388)
 This work indicates that mathrmBaSn2 maybe a potential thermoelectric material, which can stimulate further theoreticaland experimental works.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, -1, ',', 4],[61.0, 0.4, 'in', 2]

In
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96461, 96461)
 In order to improve the thermoelectric performance of TiCoSb we havesubstituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Seequally at Sb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 50, '%', 0],[193.0, 0.98, 'eV', 2],[270.0, 18, 'VEC', 2],[328.0, 700, 'K', 3]

TiCoSb
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96477, 96479)
 In order to improve the thermoelectric performance of TiCoSb we havesubstituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Seequally at Sb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 50, '%', 0],[175.0, 0.98, 'eV', 2],[252.0, 18, 'VEC', 2],[310.0, 700, 'K', 3]

Ti
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96493, 96493)
 In order to improve the thermoelectric performance of TiCoSb we havesubstituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Seequally at Sb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 50, '%', 0],[161.0, 0.98, 'eV', 2],[238.0, 18, 'VEC', 2],[296.0, 700, 'K', 3]

Zr
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96499, 96499)
 In order to improve the thermoelectric performance of TiCoSb we havesubstituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Seequally at Sb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 50, '%', 0],[155.0, 0.98, 'eV', 2],[232.0, 18, 'VEC', 2],[290.0, 700, 'K', 3]

Hf
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96503, 96503)
 In order to improve the thermoelectric performance of TiCoSb we havesubstituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Seequally at Sb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 50, '%', 0],[151.0, 0.98, 'eV', 2],[228.0, 18, 'VEC', 2],[286.0, 700, 'K', 3]

Ti
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96507, 96507)
 In order to improve the thermoelectric performance of TiCoSb we havesubstituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Seequally at Sb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 50, '%', 0],[147.0, 0.98, 'eV', 2],[224.0, 18, 'VEC', 2],[282.0, 700, 'K', 3]

Sb
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96513, 96513)
 In order to improve the thermoelectric performance of TiCoSb we havesubstituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Seequally at Sb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 50, '%', 0],[141.0, 0.98, 'eV', 2],[218.0, 18, 'VEC', 2],[276.0, 700, 'K', 3]

Sn
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96517, 96517)
 In order to improve the thermoelectric performance of TiCoSb we havesubstituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Seequally at Sb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 50, '%', 0],[137.0, 0.98, 'eV', 2],[214.0, 18, 'VEC', 2],[272.0, 700, 'K', 3]

Se
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96521, 96521)
 In order to improve the thermoelectric performance of TiCoSb we havesubstituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Seequally at Sb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 50, '%', 0],[133.0, 0.98, 'eV', 2],[210.0, 18, 'VEC', 2],[268.0, 700, 'K', 3]

Sb
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96528, 96528)
 In order to improve the thermoelectric performance of TiCoSb we havesubstituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Seequally at Sb site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 50, '%', 0],[126.0, 0.98, 'eV', 2],[203.0, 18, 'VEC', 2],[261.0, 700, 'K', 3]

Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96541, 96551)
 The electronic structure of Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5is investigated using the full potential linearized augmented plane wave methodand the thermoelectric transport properties are calculated on the basis ofsemi-classical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 50, '%', 1],[103.0, 0.98, 'eV', 1],[180.0, 18, 'VEC', 1],[238.0, 700, 'K', 2]

Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96624, 96634)
 Our band structure calculations showthat Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5 has semiconducting behavior with indirectband gap value of 0.98 eV which follow the empirical rule of 18valence-electron content to bring semiconductivity in half Heusler compounds,indicating that one can have semiconducting behavior in multinary phase of halfHeusler compounds if they full fill the 18 VEC rule and this open-up thepossibility of designing thermoelectrics with high figure of merit in halfHeusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 50, '%', 2],[20.0, 0.98, 'eV', 0],[97.0, 18, 'VEC', 0],[155.0, 700, 'K', 1]

Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96792, 96802)
 We show that at high temperature of around 700KTi0.5Zr0.25Hf0.25CoSn0.5Se0.5 has high thermoelectric figure of merit of ZT 1.05 which is higher than that of TiCoSb ( 0.95) suggesting that by going fromternary to multinary phase system one can enhance the thermoelectric figure ofmerit at higher temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 50, '%', 3],[138.0, 0.98, 'eV', 1],[61.0, 18, 'VEC', 1],[3.0, 700, 'K', 0]

TiCoSb
###Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution|Mukesh K. Choudhary,P Ravindran###
(96837, 96839)
 We show that at high temperature of around 700KTi0.5Zr0.25Hf0.25CoSn0.5Se0.5 has high thermoelectric figure of merit of ZT 1.05 which is higher than that of TiCoSb ( 0.95) suggesting that by going fromternary to multinary phase system one can enhance the thermoelectric figure ofmerit at higher temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 50, '%', 3],[183.0, 0.98, 'eV', 1],[106.0, 18, 'VEC', 1],[48.0, 700, 'K', 0]

In
###Universal Behavior of the Thermoelectric Figure of Merit, zT, vs. Quality Factor|Evan Witkoske,Xufeng Wang,Jesse Maassen,Mark Lundstrom###
(96967, 96967)
 In this paper, we use full,numerical band structures and solve the Boltzmann equation in the relaxationtime approximation using energy-dependent scattering times informed by firstprinciples simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS2
###Strain Induced Enhancement of Thermoelectric Properties of Monolayer WS2 through Valley Degeneracy|Jayanta Bera,Satyajit Sahu###
(97374, 97376)
Strain Induced Enhancement of Thermoelectric Properties of Monolayer WS2 through Valley Degeneracy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'has', 2],[235.0, 77, '%', 5],[310.0, 40, '%', 6],[415.0, 2, 'could', 8]

WS
###Strain Induced Enhancement of Thermoelectric Properties of Monolayer WS2 through Valley Degeneracy|Jayanta Bera,Satyajit Sahu###
(97466, 97467)
 The effect ofmechanical strain on the thermoelectric performances of monolayer WS 2 has beeninvestigated using density functional theory associated with semiclassicalBoltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'has', 0],[144.0, 77, '%', 3],[219.0, 40, '%', 4],[324.0, 2, 'could', 6]

S
###Strain Induced Enhancement of Thermoelectric Properties of Monolayer WS2 through Valley Degeneracy|Jayanta Bera,Satyajit Sahu###
(97556, 97556)
 For n<missing VAR>-type materialthe relaxation time scaled power factor(S 2 sigma/tau) increases by theapplication of compressive strain whereas for p<missing VAR>- type material it increaseswith the application of tensile strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2, 'has', 2],[55.0, 77, '%', 1],[130.0, 40, '%', 2],[235.0, 2, 'could', 4]

WS
###Strain Induced Enhancement of Thermoelectric Properties of Monolayer WS2 through Valley Degeneracy|Jayanta Bera,Satyajit Sahu###
(97763, 97764)
 From the study, it is observed thatuniaxial compressive strain is more effective among all types of strain toenhance the thermoelectric performance of monolayer WS 2 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 2, 'has', 5],[152.0, 77, '%', 2],[77.0, 40, '%', 1],[27.0, 2, 'could', 1]

WS
###Strain Induced Enhancement of Thermoelectric Properties of Monolayer WS2 through Valley Degeneracy|Jayanta Bera,Satyajit Sahu###
(97789, 97790)
 Such strain inducedenhancement of thermoelectric properties in monolayer WS 2 could open a newwindow for the fabrication of high-quality thermoelectric devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 2, 'has', 6],[178.0, 77, '%', 3],[103.0, 40, '%', 2],[1.0, 2, 'could', 0]

LaOPbBiS3
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(97835, 97840)
First-principles study of LaOPbBiS3 and its analogous compounds as thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 24, 'possible', 3]

LaOBiPbS3
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(97857, 97862)
 LaOBiPbS3 is a kind of pnictogen-dichalcogenide layered compounds, whichhave recently been experimentally investigated as thermoelectric materialsowing to their low thermal conductivity and high controllability of constituentelements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 24, 'possible', 2]

LaOBiPbS3
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(97936, 97941)
 However, thermoelectric performance of LaOBiPbS3 is at present notvery high and that of its analogous compounds remains to be unknown.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 24, 'possible', 1]

In
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(97977, 97977)
 In thisstudy, we theoretically investigate thermoelectric properties of 24 possiblevariations of the constituent elements in LaOBiPbS3 from the viewpoint ofthe electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 24, 'possible', 0]

LaOBiPbS3
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(98011, 98016)
 In thisstudy, we theoretically investigate thermoelectric properties of 24 possiblevariations of the constituent elements in LaOBiPbS3 from the viewpoint ofthe electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 24, 'possible', 0]

LaOBiPbS3
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(98059, 98064)
 We find that some compounds can have much betterthermoelectric performance than LaOBiPbS3; in particular, LaOSbPbSe3 ispredicted to have a power factor five times as large as that of LaOBiPbS3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 24, 'possible', 1]

LaOSbPbSe3
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(98072, 98077)
 We find that some compounds can have much betterthermoelectric performance than LaOBiPbS3; in particular, LaOSbPbSe3 ispredicted to have a power factor five times as large as that of LaOBiPbS3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 24, 'possible', 1]

LaOBiPbS3
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(98108, 98113)
 We find that some compounds can have much betterthermoelectric performance than LaOBiPbS3; in particular, LaOSbPbSe3 ispredicted to have a power factor five times as large as that of LaOBiPbS3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 24, 'possible', 1]

As
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(98133, 98133)
Here, the choice of the pnictogen atom (As, Sb, and Bi), of which thelow-energy conduction bands mainly consist, correlates with the calculatedpower factor and the dimensionless figure of merit, ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 24, 'possible', 2]

Sb
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(98136, 98136)
Here, the choice of the pnictogen atom (As, Sb, and Bi), of which thelow-energy conduction bands mainly consist, correlates with the calculatedpower factor and the dimensionless figure of merit, ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 24, 'possible', 2]

Bi
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(98141, 98141)
Here, the choice of the pnictogen atom (As, Sb, and Bi), of which thelow-energy conduction bands mainly consist, correlates with the calculatedpower factor and the dimensionless figure of merit, ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 24, 'possible', 2]

In
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(98358, 98358)
 InLaOSbPbSe3, such hybridization also pushes up the conduction band bottom,which enhances the density of states near the band edge and thus the powerfactor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 24, 'possible', 6]

LaOSbPbSe3
###First-principles study of LaOPbBiS$_3$ and its analogous compounds as thermoelectric materials|Keiya Kurematsu,Masayuki Ochi,Hidetomo Usui,Kazuhiko Kuroki###
(98361, 98366)
 InLaOSbPbSe3, such hybridization also pushes up the conduction band bottom,which enhances the density of states near the band edge and thus the powerfactor.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 24, 'possible', 6]

Cu2Se
###Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se|Shucui Sun,Yiwei Li,Yujie Chen,Xiang Xu,Lu Kang,Jingsong Zhou,Wei Xia,Shuai Liu,Meixiao Wang,Juan Jiang,Aiji Liang,Ding Pei,Kunpeng Zhao,Pengfei Qiu,Xun Shi,Lidong Chen,Yanfeng Guo,Zhengguo Wang,Yan Zhang,Zhongkai Liu,Lexian Yang,Yulin Chen###
(98445, 98447)
Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 400, 'K', 2],[324.0, 400, 'K', 5]

Cu2Se
###Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se|Shucui Sun,Yiwei Li,Yujie Chen,Xiang Xu,Lu Kang,Jingsong Zhou,Wei Xia,Shuai Liu,Meixiao Wang,Juan Jiang,Aiji Liang,Ding Pei,Kunpeng Zhao,Pengfei Qiu,Xun Shi,Lidong Chen,Yanfeng Guo,Zhengguo Wang,Yan Zhang,Zhongkai Liu,Lexian Yang,Yulin Chen###
(98507, 98509)
 Bulk Cu2Se, with ionic conductivity of Cu ions,exhibits a significant enhancement of its thermoelectric figure of merit zT bya factor of 3 near its structural transition around 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 400, 'K', 0],[262.0, 400, 'K', 3]

Cu
###Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se|Shucui Sun,Yiwei Li,Yujie Chen,Xiang Xu,Lu Kang,Jingsong Zhou,Wei Xia,Shuai Liu,Meixiao Wang,Juan Jiang,Aiji Liang,Ding Pei,Kunpeng Zhao,Pengfei Qiu,Xun Shi,Lidong Chen,Yanfeng Guo,Zhengguo Wang,Yan Zhang,Zhongkai Liu,Lexian Yang,Yulin Chen###
(98520, 98520)
 Bulk Cu2Se, with ionic conductivity of Cu ions,exhibits a significant enhancement of its thermoelectric figure of merit zT bya factor of 3 near its structural transition around 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 400, 'K', 0],[251.0, 400, 'K', 3]

Cu2Se
###Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se|Shucui Sun,Yiwei Li,Yujie Chen,Xiang Xu,Lu Kang,Jingsong Zhou,Wei Xia,Shuai Liu,Meixiao Wang,Juan Jiang,Aiji Liang,Ding Pei,Kunpeng Zhao,Pengfei Qiu,Xun Shi,Lidong Chen,Yanfeng Guo,Zhengguo Wang,Yan Zhang,Zhongkai Liu,Lexian Yang,Yulin Chen###
(98596, 98598)
 Here, we show asystematic study of the electronic structure of Cu2Se and its temperatureevolution using high-resolution angle-resolved photoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 400, 'K', 1],[173.0, 400, 'K', 2]

Cu2Se
###Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se|Shucui Sun,Yiwei Li,Yujie Chen,Xiang Xu,Lu Kang,Jingsong Zhou,Wei Xia,Shuai Liu,Meixiao Wang,Juan Jiang,Aiji Liang,Ding Pei,Kunpeng Zhao,Pengfei Qiu,Xun Shi,Lidong Chen,Yanfeng Guo,Zhengguo Wang,Yan Zhang,Zhongkai Liu,Lexian Yang,Yulin Chen###
(98739, 98741)
 Interestingly, the observed band reconstruction well reproduces thetemperature evolution of the Seebeck coefficient of Cu2Se, providing anelectronic origin for the drastic enhancement of the thermoelectric performancenear 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 400, 'K', 3],[30.0, 400, 'K', 0]

BaAgP
###Mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP: A DFT investigation|F. Parvin,M. A. Hossain,M. I. Ahmed,K. Akter,A. K. M. A. Islam###
(98884, 98886)
Mechanical, optoelectronic and thermoelectric properties of half-Heusler p<missing VAR>-type semiconductor BaAgP A DFT investigation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 1000, 'K', 10],[449.0, 0.44, 'which', 11]

BaAgP
###Mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP: A DFT investigation|F. Parvin,M. A. Hossain,M. I. Ahmed,K. Akter,A. K. M. A. Islam###
(98932, 98934)
 We have explored the mechanical, electronic, optical and thermoelectricproperties of p<missing VAR>-type half-Heusler compound BaAgP for the first time usingdensity functional theory based calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 1000, 'K', 9],[401.0, 0.44, 'which', 10]

BaAgP
###Mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP: A DFT investigation|F. Parvin,M. A. Hossain,M. I. Ahmed,K. Akter,A. K. M. A. Islam###
(99112, 99114)
 The analysis of charge densitydistribution map and Mulliken population reveals that the bonding in BaAgP is amixture of covalent and ionic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 1000, 'K', 4],[221.0, 0.44, 'which', 5]

BaAgP
###Mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP: A DFT investigation|F. Parvin,M. A. Hossain,M. I. Ahmed,K. Akter,A. K. M. A. Islam###
(99142, 99144)
 The optical features confirm that BaAgP isoptically anisotropic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 1000, 'K', 3],[191.0, 0.44, 'which', 4]

W
###Mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP: A DFT investigation|F. Parvin,M. A. Hossain,M. I. Ahmed,K. Akter,A. K. M. A. Islam###
(99264, 99264)
 The calculated power factor at 1000K along a-axis is 35.2micro-W/cmK2 (with tau10-14 s) which is 3.5 times larger than that of SnSe, apromising layered thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1000, 'K', 0],[71.0, 0.44, 'which', 1]

K2
###Mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP: A DFT investigation|F. Parvin,M. A. Hossain,M. I. Ahmed,K. Akter,A. K. M. A. Islam###
(99267, 99268)
 The calculated power factor at 1000K along a-axis is 35.2micro-W/cmK2 (with tau10-14 s) which is 3.5 times larger than that of SnSe, apromising layered thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1000, 'K', 0],[67.0, 0.44, 'which', 1]

SnSe
###Mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP: A DFT investigation|F. Parvin,M. A. Hossain,M. I. Ahmed,K. Akter,A. K. M. A. Islam###
(99297, 99298)
 The calculated power factor at 1000K along a-axis is 35.2micro-W/cmK2 (with tau10-14 s) which is 3.5 times larger than that of SnSe, apromising layered thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1000, 'K', 0],[37.0, 0.44, 'which', 1]

BaAgP
###Mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP: A DFT investigation|F. Parvin,M. A. Hossain,M. I. Ahmed,K. Akter,A. K. M. A. Islam###
(99330, 99332)
 The thermoelectric figure of merit,ZT of BaAgP is 0.44 which is small due to high thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1000, 'K', 1],[3.0, 0.44, 'which', 0]

BaAgP
###Mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP: A DFT investigation|F. Parvin,M. A. Hossain,M. I. Ahmed,K. Akter,A. K. M. A. Islam###
(99380, 99382)
 So thereduction of thermal conductivity is essential to enhance thermoelectricperformance of BaAgP in device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1000, 'K', 2],[45.0, 0.44, 'which', 1]

N
###Enhancing thermoelectric properties of isotope graphene nanoribbons via machine learning guided manipulation of disordered antidots and interfaces|Xiang Huang,Shengluo Ma,Haidong Wang,Shangchao Lin,C. Y. Zhao,Hong Wang,Shenghong Ju###
(99580, 99580)
 Herein, we conductedcomprehensive thermoelectric optimization of isotopic armchair graphenenanoribbons (AG<missing VAR>NRs) with antidots and interfaces by combining Greens<missing VAR> functionapproach with machine learning algorithms.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 0.894, 'by', 1],[80.0, 5.69, 'times', 1]

N
###Enhancing thermoelectric properties of isotope graphene nanoribbons via machine learning guided manipulation of disordered antidots and interfaces|Xiang Huang,Shengluo Ma,Haidong Wang,Shangchao Lin,C. Y. Zhao,Hong Wang,Shenghong Ju###
(99755, 99755)
The proposed optimal structure via machine learning provides physical insightsthat the carbon-13 atoms tend to form a continuous interface barrierperpendicular to the carrier transport direction to suppress the propagation ofphonons through isotope AG<missing VAR>NRs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.894, 'by', 1],[95.0, 5.69, 'times', 1]

N
###Enhancing thermoelectric properties of isotope graphene nanoribbons via machine learning guided manipulation of disordered antidots and interfaces|Xiang Huang,Shengluo Ma,Haidong Wang,Shangchao Lin,C. Y. Zhao,Hong Wang,Shenghong Ju###
(99792, 99792)
 The antidot effect is more effective thanisotope substitution in improving the thermoelectric properties of AG<missing VAR>NRs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.894, 'by', 2],[132.0, 5.69, 'times', 2]

Co
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(99890, 99890)
Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys Evidence for Strong Electron-Phonon Coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 0.007, 'at', 2],[109.0, 60, 'K', 2],[124.0, 0.08, 'at', 2],[125.0, 100, 'K', 2],[129.0, 4, '%', 2],[301.0, 50, '%', 6],[340.0, 0.125, 'at', 7],[341.0, 100, 'K', 7]

Ir
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(99893, 99893)
Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys Evidence for Strong Electron-Phonon Coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.007, 'at', 2],[106.0, 60, 'K', 2],[121.0, 0.08, 'at', 2],[122.0, 100, 'K', 2],[126.0, 4, '%', 2],[298.0, 50, '%', 6],[337.0, 0.125, 'at', 7],[338.0, 100, 'K', 7]

Os
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(99898, 99898)
Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys Evidence for Strong Electron-Phonon Coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.007, 'at', 2],[101.0, 60, 'K', 2],[116.0, 0.08, 'at', 2],[117.0, 100, 'K', 2],[121.0, 4, '%', 2],[293.0, 50, '%', 6],[332.0, 0.125, 'at', 7],[333.0, 100, 'K', 7]

FeSi
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(99902, 99903)
Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys Evidence for Strong Electron-Phonon Coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.007, 'at', 2],[96.0, 60, 'K', 2],[111.0, 0.08, 'at', 2],[112.0, 100, 'K', 2],[116.0, 4, '%', 2],[288.0, 50, '%', 6],[327.0, 0.125, 'at', 7],[328.0, 100, 'K', 7]

Fe1-x
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(99951, 99954)
 The effects of various transition metal dopants on the electrical and thermaltransport properties of Fe1-xMxSi alloys (M<missing VAR> Co, Ir, Os) are reported.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[44.0, 0.007, 'at', 1],[45.0, 60, 'K', 1],[60.0, 0.08, 'at', 1],[61.0, 100, 'K', 1],[65.0, 4, '%', 1],[237.0, 50, '%', 5],[276.0, 0.125, 'at', 6],[277.0, 100, 'K', 6]

Si
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(99956, 99956)
 The effects of various transition metal dopants on the electrical and thermaltransport properties of Fe1-xMxSi alloys (M<missing VAR> Co, Ir, Os) are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.007, 'at', 1],[43.0, 60, 'K', 1],[58.0, 0.08, 'at', 1],[59.0, 100, 'K', 1],[63.0, 4, '%', 1],[235.0, 50, '%', 5],[274.0, 0.125, 'at', 6],[275.0, 100, 'K', 6]

Co
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(99963, 99963)
 The effects of various transition metal dopants on the electrical and thermaltransport properties of Fe1-xMxSi alloys (M<missing VAR> Co, Ir, Os) are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.007, 'at', 1],[36.0, 60, 'K', 1],[51.0, 0.08, 'at', 1],[52.0, 100, 'K', 1],[56.0, 4, '%', 1],[228.0, 50, '%', 5],[267.0, 0.125, 'at', 6],[268.0, 100, 'K', 6]

Ir
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(99966, 99966)
 The effects of various transition metal dopants on the electrical and thermaltransport properties of Fe1-xMxSi alloys (M<missing VAR> Co, Ir, Os) are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0.007, 'at', 1],[33.0, 60, 'K', 1],[48.0, 0.08, 'at', 1],[49.0, 100, 'K', 1],[53.0, 4, '%', 1],[225.0, 50, '%', 5],[264.0, 0.125, 'at', 6],[265.0, 100, 'K', 6]

Os
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(99969, 99969)
 The effects of various transition metal dopants on the electrical and thermaltransport properties of Fe1-xMxSi alloys (M<missing VAR> Co, Ir, Os) are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.007, 'at', 1],[30.0, 60, 'K', 1],[45.0, 0.08, 'at', 1],[46.0, 100, 'K', 1],[50.0, 4, '%', 1],[222.0, 50, '%', 5],[261.0, 0.125, 'at', 6],[262.0, 100, 'K', 6]

FeSi
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(100006, 100007)
 Themaximum thermoelectric figure of merit Z<missing VAR>Tmax is improved from 0.007 at 60 K forpure FeSi to ZT  0.08 at 100 K for 4% Ir doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.007, 'at', 0],[7.0, 60, 'K', 0],[7.0, 0.08, 'at', 0],[8.0, 100, 'K', 0],[12.0, 4, '%', 0],[184.0, 50, '%', 4],[223.0, 0.125, 'at', 5],[224.0, 100, 'K', 5]

Ir
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(100022, 100022)
 Themaximum thermoelectric figure of merit Z<missing VAR>Tmax is improved from 0.007 at 60 K forpure FeSi to ZT  0.08 at 100 K for 4% Ir doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.007, 'at', 0],[23.0, 60, 'K', 0],[8.0, 0.08, 'at', 0],[7.0, 100, 'K', 0],[3.0, 4, '%', 0],[169.0, 50, '%', 4],[208.0, 0.125, 'at', 5],[209.0, 100, 'K', 5]

Os
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(100044, 100044)
 A comparison of the thermalconductivity data among Os, Ir and Co doped alloys indicates strongelectron-phonon coupling in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.007, 'at', 1],[45.0, 60, 'K', 1],[30.0, 0.08, 'at', 1],[29.0, 100, 'K', 1],[25.0, 4, '%', 1],[147.0, 50, '%', 3],[186.0, 0.125, 'at', 4],[187.0, 100, 'K', 4]

Ir
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(100047, 100047)
 A comparison of the thermalconductivity data among Os, Ir and Co doped alloys indicates strongelectron-phonon coupling in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.007, 'at', 1],[48.0, 60, 'K', 1],[33.0, 0.08, 'at', 1],[32.0, 100, 'K', 1],[28.0, 4, '%', 1],[144.0, 50, '%', 3],[183.0, 0.125, 'at', 4],[184.0, 100, 'K', 4]

Co
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(100051, 100051)
 A comparison of the thermalconductivity data among Os, Ir and Co doped alloys indicates strongelectron-phonon coupling in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0.007, 'at', 1],[52.0, 60, 'K', 1],[37.0, 0.08, 'at', 1],[36.0, 100, 'K', 1],[32.0, 4, '%', 1],[140.0, 50, '%', 3],[179.0, 0.125, 'at', 4],[180.0, 100, 'K', 4]

Fe0.96Ir0.04Si
###Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling|Brian C. Sales,Olivier Delaire,Michael A. McGuire,Andrew F. May###
(100159, 100163)
 The effects ofgrain size on thermoelectric properties of Fe0.96Ir0.04Si alloys are alsoreported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.48,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 0.007, 'at', 3],[160.0, 60, 'K', 3],[145.0, 0.08, 'at', 3],[144.0, 100, 'K', 3],[140.0, 4, '%', 3],[28.0, 50, '%', 1],[67.0, 0.125, 'at', 2],[68.0, 100, 'K', 2]

Ca3Co4O9
###A Structural Phase Transition in Ca3Co4O9 Associated with Enhanced High Temperature Thermoelectric Properties|Tao Wu,Trevor A. Tyson,Haiyan Chen,Jianming Bai,Hsin Wang,Cherno Jaye###
(100280, 100285)
A Structural Phase Transition in Ca3Co4O9 Associated with Enhanced High Temperature Thermoelectric Properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5625,0,0,0,0,0,0,0,0,0,0,0,0.1875,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 400, 'K', 1],[162.0, 400, 'K', 3]

Ca3Co4O9
###A Structural Phase Transition in Ca3Co4O9 Associated with Enhanced High Temperature Thermoelectric Properties|Tao Wu,Trevor A. Tyson,Haiyan Chen,Jianming Bai,Hsin Wang,Cherno Jaye###
(100363, 100368)
 Temperature dependent electrical resistivity, crystal structure and heatcapacity measurements reveal a resistivity drop and metal to semiconductortransition corresponding to first order structural phase transition near 400 Kin Ca3Co4O9.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5625,0,0,0,0,0,0,0,0,0,0,0,0.1875,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 400, 'K', 0],[79.0, 400, 'K', 2]

K
###A Structural Phase Transition in Ca3Co4O9 Associated with Enhanced High Temperature Thermoelectric Properties|Tao Wu,Trevor A. Tyson,Haiyan Chen,Jianming Bai,Hsin Wang,Cherno Jaye###
(100422, 100422)
 The lattice parameter c<missing VAR> varies smoothly with increasingtemperature, while anomalies in the a, b<missing VAR>1 and b<missing VAR>2 lattice parameters occur at 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 400, 'K', 1],[25.0, 400, 'K', 1]

Ca2CoO3
###A Structural Phase Transition in Ca3Co4O9 Associated with Enhanced High Temperature Thermoelectric Properties|Tao Wu,Trevor A. Tyson,Haiyan Chen,Jianming Bai,Hsin Wang,Cherno Jaye###
(100427, 100431)
 Both Ca2CoO3 and CoO2 layers become distorted above  400 K associatedwith the metal to semiconductor transport behavior change.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 400, 'K', 2],[16.0, 400, 'K', 0]

CoO2
###A Structural Phase Transition in Ca3Co4O9 Associated with Enhanced High Temperature Thermoelectric Properties|Tao Wu,Trevor A. Tyson,Haiyan Chen,Jianming Bai,Hsin Wang,Cherno Jaye###
(100435, 100437)
 Both Ca2CoO3 and CoO2 layers become distorted above  400 K associatedwith the metal to semiconductor transport behavior change.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 400, 'K', 2],[10.0, 400, 'K', 0]

In
###Thermoelectric effect enhanced by the resonant states in graphene|M. Inglot,A. Dyrdał,V. K. Dugaev,J. Barnaś###
(100872, 100872)
 In the limit of aconstant relaxation time, this ratio has been calculated analytically formu0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(100929, 100929)
Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 3, 'D', 3],[191.0, 0.26, 'to', 3],[197.0, 0.39, 'to', 3],[198.0, 0.55, 'depending', 3],[247.0, 3, 'D', 4],[297.0, 0.76, ',', 4],[306.0, 30, 'times', 4],[326.0, 3, 'D', 5]

Si
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(100959, 100959)
 The thermoelectric properties of n<missing VAR> type nanoscale three dimensional (3D) Siphononic crystals (PnCs) with spherical pores are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 3, 'D', 2],[161.0, 0.26, 'to', 2],[167.0, 0.39, 'to', 2],[168.0, 0.55, 'depending', 2],[217.0, 3, 'D', 3],[267.0, 0.76, ',', 3],[276.0, 30, 'times', 3],[296.0, 3, 'D', 4]

Cs
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(100968, 100968)
 The thermoelectric properties of n<missing VAR> type nanoscale three dimensional (3D) Siphononic crystals (PnCs) with spherical pores are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 3, 'D', 2],[152.0, 0.26, 'to', 2],[158.0, 0.39, 'to', 2],[159.0, 0.55, 'depending', 2],[208.0, 3, 'D', 3],[258.0, 0.76, ',', 3],[267.0, 30, 'times', 3],[287.0, 3, 'D', 4]

Si
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(101062, 101062)
 We foundthat the electronic transport coefficients in 3D Si PnC at room temperature(300 K) change very little compared with that of Si, for example, electricalconductivity and electronic thermal conductivity is decreased by 0.26 to 0.41and 0.39 to 0.55 depending on carrier concentration, respectively, and theSeebeck coefficient is similar to that of bulk Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 3, 'D', 0],[58.0, 0.26, 'to', 0],[64.0, 0.39, 'to', 0],[65.0, 0.55, 'depending', 0],[114.0, 3, 'D', 1],[164.0, 0.76, ',', 1],[173.0, 30, 'times', 1],[193.0, 3, 'D', 2]

C
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(101065, 101065)
 We foundthat the electronic transport coefficients in 3D Si PnC at room temperature(300 K) change very little compared with that of Si, for example, electricalconductivity and electronic thermal conductivity is decreased by 0.26 to 0.41and 0.39 to 0.55 depending on carrier concentration, respectively, and theSeebeck coefficient is similar to that of bulk Si.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, 'D', 0],[55.0, 0.26, 'to', 0],[61.0, 0.39, 'to', 0],[62.0, 0.55, 'depending', 0],[111.0, 3, 'D', 1],[161.0, 0.76, ',', 1],[170.0, 30, 'times', 1],[190.0, 3, 'D', 2]

K
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(101077, 101077)
 We foundthat the electronic transport coefficients in 3D Si PnC at room temperature(300 K) change very little compared with that of Si, for example, electricalconductivity and electronic thermal conductivity is decreased by 0.26 to 0.41and 0.39 to 0.55 depending on carrier concentration, respectively, and theSeebeck coefficient is similar to that of bulk Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 3, 'D', 0],[43.0, 0.26, 'to', 0],[49.0, 0.39, 'to', 0],[50.0, 0.55, 'depending', 0],[99.0, 3, 'D', 1],[149.0, 0.76, ',', 1],[158.0, 30, 'times', 1],[178.0, 3, 'D', 2]

Si
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(101094, 101094)
 We foundthat the electronic transport coefficients in 3D Si PnC at room temperature(300 K) change very little compared with that of Si, for example, electricalconductivity and electronic thermal conductivity is decreased by 0.26 to 0.41and 0.39 to 0.55 depending on carrier concentration, respectively, and theSeebeck coefficient is similar to that of bulk Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 3, 'D', 0],[26.0, 0.26, 'to', 0],[32.0, 0.39, 'to', 0],[33.0, 0.55, 'depending', 0],[82.0, 3, 'D', 1],[132.0, 0.76, ',', 1],[141.0, 30, 'times', 1],[161.0, 3, 'D', 2]

Si
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(101160, 101160)
 We foundthat the electronic transport coefficients in 3D Si PnC at room temperature(300 K) change very little compared with that of Si, for example, electricalconductivity and electronic thermal conductivity is decreased by 0.26 to 0.41and 0.39 to 0.55 depending on carrier concentration, respectively, and theSeebeck coefficient is similar to that of bulk Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 3, 'D', 0],[40.0, 0.26, 'to', 0],[34.0, 0.39, 'to', 0],[33.0, 0.55, 'depending', 0],[16.0, 3, 'D', 1],[66.0, 0.76, ',', 1],[75.0, 30, 'times', 1],[95.0, 3, 'D', 2]

Si
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(101178, 101178)
 However, the lattice thermalconductivity of 3D Si PnCs with spherical pores is decreased by a factor of 500calculated by molecular dynamics methods, leading to the ZT of 0.76, which isabout 30 times of that of porous Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 3, 'D', 1],[58.0, 0.26, 'to', 1],[52.0, 0.39, 'to', 1],[51.0, 0.55, 'depending', 1],[2.0, 3, 'D', 0],[48.0, 0.76, ',', 0],[57.0, 30, 'times', 0],[77.0, 3, 'D', 1]

Cs
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(101181, 101181)
 However, the lattice thermalconductivity of 3D Si PnCs with spherical pores is decreased by a factor of 500calculated by molecular dynamics methods, leading to the ZT of 0.76, which isabout 30 times of that of porous Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 3, 'D', 1],[61.0, 0.26, 'to', 1],[55.0, 0.39, 'to', 1],[54.0, 0.55, 'depending', 1],[5.0, 3, 'D', 0],[45.0, 0.76, ',', 0],[54.0, 30, 'times', 0],[74.0, 3, 'D', 1]

Si
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(101245, 101245)
 However, the lattice thermalconductivity of 3D Si PnCs with spherical pores is decreased by a factor of 500calculated by molecular dynamics methods, leading to the ZT of 0.76, which isabout 30 times of that of porous Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 3, 'D', 1],[125.0, 0.26, 'to', 1],[119.0, 0.39, 'to', 1],[118.0, 0.55, 'depending', 1],[69.0, 3, 'D', 0],[19.0, 0.76, ',', 0],[10.0, 30, 'times', 0],[10.0, 3, 'D', 1]

Si
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(101257, 101257)
 This work indicates that 3D Si PnC is apromising candidate for high efficiency thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 3, 'D', 2],[137.0, 0.26, 'to', 2],[131.0, 0.39, 'to', 2],[130.0, 0.55, 'depending', 2],[81.0, 3, 'D', 1],[31.0, 0.76, ',', 1],[22.0, 30, 'times', 1],[2.0, 3, 'D', 0]

C
###Thermoelectric Properties of Nanoscale three dimensional Si Phononic Crystal|Lina Yang,Nuo Yang,Baowen Li###
(101260, 101260)
 This work indicates that 3D Si PnC is apromising candidate for high efficiency thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 3, 'D', 2],[140.0, 0.26, 'to', 2],[134.0, 0.39, 'to', 2],[133.0, 0.55, 'depending', 2],[84.0, 3, 'D', 1],[34.0, 0.76, ',', 1],[25.0, 30, 'times', 1],[5.0, 3, 'D', 0]

ZrTe5
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101310, 101312)
Enhanced thermopower and low thermal conductivity in p<missing VAR>-type polycrystalline ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 340, 'K', 1],[60.0, 458, 'uV', 2],[65.0, 340, 'K', 2],[101.0, 9.5, 'X', 3],[129.0, 38, 'K', 4],[175.0, 300, 'K', 5],[213.0, 150, 'K', 6],[251.0, 300, 'K', 7],[257.0, 63, '%', 7]

ZrTe5
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101327, 101329)
 Thermoelectric properties of polycrystalline p<missing VAR>-type ZrTe5 are reported intemperature (T) range 2 - 340 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 340, 'K', 0],[43.0, 458, 'uV', 1],[48.0, 340, 'K', 1],[84.0, 9.5, 'X', 2],[112.0, 38, 'K', 3],[158.0, 300, 'K', 4],[196.0, 150, 'K', 5],[234.0, 300, 'K', 6],[240.0, 63, '%', 6]

(S)
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101356, 101358)
 Thermoelectric power (S) is positive andreaches up to 458 uV/K at 340 K on increasing T<missing VAR>.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 340, 'K', 1],[14.0, 458, 'uV', 0],[19.0, 340, 'K', 0],[55.0, 9.5, 'X', 1],[83.0, 38, 'K', 2],[129.0, 300, 'K', 3],[167.0, 150, 'K', 4],[205.0, 300, 'K', 5],[211.0, 63, '%', 5]

K
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101374, 101374)
 Thermoelectric power (S) is positive andreaches up to 458 uV/K at 340 K on increasing T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 340, 'K', 1],[2.0, 458, 'uV', 0],[3.0, 340, 'K', 0],[39.0, 9.5, 'X', 1],[67.0, 38, 'K', 2],[113.0, 300, 'K', 3],[151.0, 150, 'K', 4],[189.0, 300, 'K', 5],[195.0, 63, '%', 5]

V
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101400, 101400)
 The value of Fermi energy 16meV, suggests low carrier density of  9.5 X 1018 cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 340, 'K', 2],[28.0, 458, 'uV', 1],[23.0, 340, 'K', 1],[13.0, 9.5, 'X', 0],[41.0, 38, 'K', 1],[87.0, 300, 'K', 2],[125.0, 150, 'K', 3],[163.0, 300, 'K', 4],[169.0, 63, '%', 4]

S
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101431, 101431)
 A sharp anomaly in Sdata is observed at 38 K, which seems intrinsic to p<missing VAR>-type ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 340, 'K', 3],[59.0, 458, 'uV', 2],[54.0, 340, 'K', 2],[18.0, 9.5, 'X', 1],[10.0, 38, 'K', 0],[56.0, 300, 'K', 1],[94.0, 150, 'K', 2],[132.0, 300, 'K', 3],[138.0, 63, '%', 3]

ZrTe5
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101456, 101458)
 A sharp anomaly in Sdata is observed at 38 K, which seems intrinsic to p<missing VAR>-type ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 340, 'K', 3],[84.0, 458, 'uV', 2],[79.0, 340, 'K', 2],[43.0, 9.5, 'X', 1],[15.0, 38, 'K', 0],[29.0, 300, 'K', 1],[67.0, 150, 'K', 2],[105.0, 300, 'K', 3],[111.0, 63, '%', 3]

W
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101477, 101477)
 The thermalconductivity value is low (2 W/m<missing VAR>-K at T<missing VAR>  300 K) with major contribution fromlattice part.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 340, 'K', 4],[105.0, 458, 'uV', 3],[100.0, 340, 'K', 3],[64.0, 9.5, 'X', 2],[36.0, 38, 'K', 1],[10.0, 300, 'K', 0],[48.0, 150, 'K', 1],[86.0, 300, 'K', 2],[92.0, 63, '%', 2]

K
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101481, 101481)
 The thermalconductivity value is low (2 W/m<missing VAR>-K at T<missing VAR>  300 K) with major contribution fromlattice part.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 340, 'K', 4],[109.0, 458, 'uV', 3],[104.0, 340, 'K', 3],[68.0, 9.5, 'X', 2],[40.0, 38, 'K', 1],[6.0, 300, 'K', 0],[44.0, 150, 'K', 1],[82.0, 300, 'K', 2],[88.0, 63, '%', 2]

HfTe5
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101576, 101578)
 The figure of merit zT (0.026 at T<missing VAR>  300 K) is  63% higher than HfTe5(0.016), and better than the conventional SnTe, p<missing VAR>-type PbTe and bipolarpristine ZrTe5 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 340, 'K', 6],[204.0, 458, 'uV', 5],[199.0, 340, 'K', 5],[163.0, 9.5, 'X', 4],[135.0, 38, 'K', 3],[89.0, 300, 'K', 2],[51.0, 150, 'K', 1],[13.0, 300, 'K', 0],[7.0, 63, '%', 0]

SnTe
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101596, 101597)
 The figure of merit zT (0.026 at T<missing VAR>  300 K) is  63% higher than HfTe5(0.016), and better than the conventional SnTe, p<missing VAR>-type PbTe and bipolarpristine ZrTe5 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 340, 'K', 6],[224.0, 458, 'uV', 5],[219.0, 340, 'K', 5],[183.0, 9.5, 'X', 4],[155.0, 38, 'K', 3],[109.0, 300, 'K', 2],[71.0, 150, 'K', 1],[33.0, 300, 'K', 0],[27.0, 63, '%', 0]

PbTe
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101604, 101605)
 The figure of merit zT (0.026 at T<missing VAR>  300 K) is  63% higher than HfTe5(0.016), and better than the conventional SnTe, p<missing VAR>-type PbTe and bipolarpristine ZrTe5 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 340, 'K', 6],[232.0, 458, 'uV', 5],[227.0, 340, 'K', 5],[191.0, 9.5, 'X', 4],[163.0, 38, 'K', 3],[117.0, 300, 'K', 2],[79.0, 150, 'K', 1],[41.0, 300, 'K', 0],[35.0, 63, '%', 0]

ZrTe5
###Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(101614, 101616)
 The figure of merit zT (0.026 at T<missing VAR>  300 K) is  63% higher than HfTe5(0.016), and better than the conventional SnTe, p<missing VAR>-type PbTe and bipolarpristine ZrTe5 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 340, 'K', 6],[242.0, 458, 'uV', 5],[237.0, 340, 'K', 5],[201.0, 9.5, 'X', 4],[173.0, 38, 'K', 3],[127.0, 300, 'K', 2],[89.0, 150, 'K', 1],[51.0, 300, 'K', 0],[45.0, 63, '%', 0]

Fe2V1-xW
###Stoichiometric and off-stoichiometric full Heusler $\mathbf {Fe_2V_{1-x}W_xAl} $ thermoelectric systems|B. Hinterleitner,P. Fuchs,J. Rehak,S. Steiner,M. Kishimoto,R. Moser,R. Podloucky,E. Bauer###
(101643, 101649)
Stoichiometric and off-stoichiometric full Heusler mathbf Fe2V1-xWx<missing VAR>Al  thermoelectric systems.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[44.0, 0.2, ',', 1],[119.0, 10, '%', 2],[270.0, 0.2, 'have', 4]

Al
###Stoichiometric and off-stoichiometric full Heusler $\mathbf {Fe_2V_{1-x}W_xAl} $ thermoelectric systems|B. Hinterleitner,P. Fuchs,J. Rehak,S. Steiner,M. Kishimoto,R. Moser,R. Podloucky,E. Bauer###
(101651, 101651)
Stoichiometric and off-stoichiometric full Heusler mathbf Fe2V1-xWx<missing VAR>Al  thermoelectric systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.2, ',', 1],[117.0, 10, '%', 2],[268.0, 0.2, 'have', 4]

Fe2V1-xW
###Stoichiometric and off-stoichiometric full Heusler $\mathbf {Fe_2V_{1-x}W_xAl} $ thermoelectric systems|B. Hinterleitner,P. Fuchs,J. Rehak,S. Steiner,M. Kishimoto,R. Moser,R. Podloucky,E. Bauer###
(101674, 101680)
 A series of full-Heusler alloys, rm Fe2V1-xWx<missing VAR>Al, 0 leq x<missing VAR> leq 0.2,was prepared, characterized and relevant physical properties to account for thethermoelectric performance were studied in a wide temperature range.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[13.0, 0.2, ',', 0],[88.0, 10, '%', 1],[239.0, 0.2, 'have', 3]

Al
###Stoichiometric and off-stoichiometric full Heusler $\mathbf {Fe_2V_{1-x}W_xAl} $ thermoelectric systems|B. Hinterleitner,P. Fuchs,J. Rehak,S. Steiner,M. Kishimoto,R. Moser,R. Podloucky,E. Bauer###
(101682, 101682)
 A series of full-Heusler alloys, rm Fe2V1-xWx<missing VAR>Al, 0 leq x<missing VAR> leq 0.2,was prepared, characterized and relevant physical properties to account for thethermoelectric performance were studied in a wide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.2, ',', 0],[86.0, 10, '%', 1],[237.0, 0.2, 'have', 3]

V/W
###Stoichiometric and off-stoichiometric full Heusler $\mathbf {Fe_2V_{1-x}W_xAl} $ thermoelectric systems|B. Hinterleitner,P. Fuchs,J. Rehak,S. Steiner,M. Kishimoto,R. Moser,R. Podloucky,E. Bauer###
(101793, 101795)
 The V/W substitution causes i) a change of the main carrier type,from holes to electrons as evidenced from Seebeck and Hall measurements and ii)a substantial reduction of the lattice thermal conductivity due to a creationof lattice disorder by means of a distinct different mass and metallic radiusupon the V/W substitution.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[100.0, 0.2, ',', 2],[25.0, 10, '%', 1],[124.0, 0.2, 'have', 1]

V/W
###Stoichiometric and off-stoichiometric full Heusler $\mathbf {Fe_2V_{1-x}W_xAl} $ thermoelectric systems|B. Hinterleitner,P. Fuchs,J. Rehak,S. Steiner,M. Kishimoto,R. Moser,R. Podloucky,E. Bauer###
(101904, 101906)
 The V/W substitution causes i) a change of the main carrier type,from holes to electrons as evidenced from Seebeck and Hall measurements and ii)a substantial reduction of the lattice thermal conductivity due to a creationof lattice disorder by means of a distinct different mass and metallic radiusupon the V/W substitution.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[211.0, 0.2, ',', 2],[136.0, 10, '%', 1],[13.0, 0.2, 'have', 1]

CuInTe2
###Tuning the carrier concentration to improve the thermoelectric performance of CuInTe2 compound|J. Wei,H. J. Liu,L. Cheng,J. Zhang,J. H. Liang,P. H. Jiang,D. D. Fan,J. Shi###
(101997, 102000)
Tuning the carrier concentration to improve the thermoelectric performance of CuInTe2 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.92, 'eV', 2],[202.0, 850, 'K', 4]

CuInTe2
###Tuning the carrier concentration to improve the thermoelectric performance of CuInTe2 compound|J. Wei,H. J. Liu,L. Cheng,J. Zhang,J. H. Liang,P. H. Jiang,D. D. Fan,J. Shi###
(102017, 102020)
 The electronic and transport properties of CuInTe2 chalcopyrite areinvestigated using density functional calculations combined with Boltzmanntheory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.92, 'eV', 1],[182.0, 850, 'K', 3]

CuInTe2
###Tuning the carrier concentration to improve the thermoelectric performance of CuInTe2 compound|J. Wei,H. J. Liu,L. Cheng,J. Zhang,J. H. Liang,P. H. Jiang,D. D. Fan,J. Shi###
(102177, 102180)
 Together with the inherent low thermalconductivity, the ZT values of CuInTe2 compound can be enhanced to as high as1.72 at 850 K, which is obviously larger than those measured experimentally andsuggests there is still room to improve the thermoelectric performance of thischalcopyrite compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0.92, 'eV', 2],[22.0, 850, 'K', 0]

In
###First principles search for $n$-type oxide, nitride, and sulfide thermoelectrics|Kevin F. Garrity###
(102353, 102353)
 In this work,we use high-throughput first principles calculations to screen transition metaloxides, nitrides, and sulfides for candidate materials with high power factorsand low thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First principles search for $n$-type oxide, nitride, and sulfide thermoelectrics|Kevin F. Garrity###
(102556, 102556)
 In addition, our calculationsindicate that many of our candidate materials have low thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AgGaTe2
###Thermoelectric properties of AgGaTe$_2$ and related chalcopyrite structure materials|David Parker,David J. Singh###
(102603, 102606)
Thermoelectric properties of AgGaTe2 and related chalcopyrite structure materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.8, 'with', 1],[194.0, 900, 'K', 2],[217.0, 700, 'K', 2]

AgGaTe2
###Thermoelectric properties of AgGaTe$_2$ and related chalcopyrite structure materials|David Parker,David J. Singh###
(102644, 102647)
 We present an analysis of the potential thermoelectric performance of p<missing VAR>-typeAgGaTe2, which has already shown a ZT of 0.8 with partial optimization,and observe that the same band structure features, such as a mixture of lightand heavy bands and isotropic transport, that lead to this good performance arepresent in certain other ternary chalcopyrite structure semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.8, 'with', 0],[153.0, 900, 'K', 1],[176.0, 700, 'K', 1]

AgGaTe2
###Thermoelectric properties of AgGaTe$_2$ and related chalcopyrite structure materials|David Parker,David J. Singh###
(102760, 102763)
 We findthat optimal performance of AgGaTe2 will be found for hole concentrationsbetween 4 times 1019 and 2 times 1020cm-3 at 900 K, and 2times 1019 and 1020 cm-3 at 700 K, and that certain otherchalcopyrite semiconductors might show good thermoelectric performance atsimilar doping ranges and temperatures if not for higher lattice thermalconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 0.8, 'with', 1],[37.0, 900, 'K', 0],[60.0, 700, 'K', 0]

In
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(102900, 102900)
Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0, ',', 2],[82.0, 0.05, ',', 2],[152.0, 395, 'K', 3]

Te
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(102904, 102904)
Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0, ',', 2],[78.0, 0.05, ',', 2],[148.0, 395, 'K', 3]

In2Te5
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(102910, 102913)
Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0, ',', 2],[69.0, 0.05, ',', 2],[139.0, 395, 'K', 3]

In
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(102930, 102930)
 We study role of site substitutions at In and Te site in In2Te5 on thethermoelectric behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0, ',', 1],[52.0, 0.05, ',', 1],[122.0, 395, 'K', 2]

Te
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(102934, 102934)
 We study role of site substitutions at In and Te site in In2Te5 on thethermoelectric behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0, ',', 1],[48.0, 0.05, ',', 1],[118.0, 395, 'K', 2]

In2Te5
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(102940, 102943)
 We study role of site substitutions at In and Te site in In2Te5 on thethermoelectric behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0, ',', 1],[39.0, 0.05, ',', 1],[109.0, 395, 'K', 2]

In2
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(102963, 102964)
 Single crystals with compositions In2(Te1-xSex)5 (x<missing VAR> 0, 0.05, 0.10) and Fe0.05In1.95(Te0.90Se0.10)5 were prepared using modifiedBridgman-Stockbarger technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0, ',', 0],[18.0, 0.05, ',', 0],[88.0, 395, 'K', 1]

Te1-x
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(102966, 102969)
 Single crystals with compositions In2(Te1-xSex)5 (x<missing VAR> 0, 0.05, 0.10) and Fe0.05In1.95(Te0.90Se0.10)5 were prepared using modifiedBridgman-Stockbarger technique.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 0, ',', 0],[13.0, 0.05, ',', 0],[83.0, 395, 'K', 1]

Fe0.05In1.95(Te0.90Se0.10)5
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(102990, 103000)
 Single crystals with compositions In2(Te1-xSex)5 (x<missing VAR> 0, 0.05, 0.10) and Fe0.05In1.95(Te0.90Se0.10)5 were prepared using modifiedBridgman-Stockbarger technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0071428571428571435,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2785714285714286,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0, ',', 0],[8.0, 0.05, ',', 0],[52.0, 395, 'K', 1]

Fe
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(103074, 103074)
 Asubstantial decrease in thermal conductivity is observed in Fe substitutedsamples attributed to the enhanced phonon point-defect scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0, ',', 2],[92.0, 0.05, ',', 2],[22.0, 395, 'K', 1]

S
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(103109, 103109)
 Markedenhancement in Seebeck coefficient S along with a concomitant suppression ofelectrical resistivity r<missing VAR>ho is observed in Se substituted single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 0, ',', 3],[127.0, 0.05, ',', 3],[57.0, 395, 'K', 2]

Se
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(103137, 103137)
 Markedenhancement in Seebeck coefficient S along with a concomitant suppression ofelectrical resistivity r<missing VAR>ho is observed in Se substituted single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 0, ',', 3],[155.0, 0.05, ',', 3],[85.0, 395, 'K', 2]

Fe0.05In1.95(Te0.90Se0.10)5
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(103191, 103201)
 Anoverall enhancement of thermoelectric figure of merit (zT) by a factor of 310is observed in single crystals of Fe0.05In1.95(Te0.90Se0.10)5 compared to theparent In2Te5 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0071428571428571435,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2785714285714286,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 0, ',', 4],[209.0, 0.05, ',', 4],[139.0, 395, 'K', 3]

In2Te5
###Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5|Anup V. Sanchela,Ajay D. Thakur,C. V. Tomy###
(103212, 103215)
 Anoverall enhancement of thermoelectric figure of merit (zT) by a factor of 310is observed in single crystals of Fe0.05In1.95(Te0.90Se0.10)5 compared to theparent In2Te5 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 0, ',', 4],[230.0, 0.05, ',', 4],[160.0, 395, 'K', 3]

AuSb2Te3
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103238, 103242)
High Thermoelectric Performance of AuSb2Te3 Heterostructure Derived from the Potential Barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 1, '%', 7]

In
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103351, 103351)
In this study, we present thesimultaneous increase of electrical conductivity and Seebeck coefficient, andreduction of thermal conductivity in Sb2Te3-Au system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 1, '%', 4]

Sb2Te3
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103395, 103398)
In this study, we present thesimultaneous increase of electrical conductivity and Seebeck coefficient, andreduction of thermal conductivity in Sb2Te3-Au system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 1, '%', 4]

Au
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103400, 103400)
In this study, we present thesimultaneous increase of electrical conductivity and Seebeck coefficient, andreduction of thermal conductivity in Sb2Te3-Au system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1, '%', 4]

Au
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103421, 103421)
The enhanced electricalconductivity lies in the incorporated Au nanostructures contributing toinjecting carriers to Sb2Te3 matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1, '%', 3]

Sb2Te3
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103436, 103439)
The enhanced electricalconductivity lies in the incorporated Au nanostructures contributing toinjecting carriers to Sb2Te3 matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 1, '%', 3]

Au
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103456, 103456)
The appropriate barriers originated fromthe Au-Sb2Te3 interface, which filter low energy carriers, results inenhancement of Seebeck coefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1, '%', 2]

Sb2Te3
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103458, 103461)
The appropriate barriers originated fromthe Au-Sb2Te3 interface, which filter low energy carriers, results inenhancement of Seebeck coefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 1, '%', 2]

As
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103523, 103523)
As a consequence, combination of these effects promote double ofZT value in 1% Au Sb2Te3 composites with respect to the pristine Sb2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1, '%', 0]

Au
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103555, 103555)
As a consequence, combination of these effects promote double ofZT value in 1% Au Sb2Te3 composites with respect to the pristine Sb2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1, '%', 0]

Sb2Te3
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103557, 103560)
As a consequence, combination of these effects promote double ofZT value in 1% Au Sb2Te3 composites with respect to the pristine Sb2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 1, '%', 0]

Sb2Te3
###High Thermoelectric Performance of Au@Sb2Te3 Heterostructure Derived from the Potential Barriers|Wenwen Zheng,Peng Bi,Fengming Liu,Yong Liu,Jing Shi,Rui Xiong,Ziyu Wang###
(103574, 103577)
As a consequence, combination of these effects promote double ofZT value in 1% Au Sb2Te3 composites with respect to the pristine Sb2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1, '%', 0]

At
###Lifshitz transition and thermoelectric properties of bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(103789, 103789)
 At higher temperatures the anomalies vanish, but measurable quantitiescharacterizing remaining maximum of the Seebeck coefficient still unveil thepresence of massless Dirac fermions and make it possible to determine thetrigonal warping strength.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 10, ',', 1]

B
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(103917, 103917)
A comparative study of the thermoelectric performance of graphene-like BX<missing VAR> (X<missing VAR> P, As, Sb) monolayers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 3.0, 'can', 4]

P
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(103923, 103923)
A comparative study of the thermoelectric performance of graphene-like BX<missing VAR> (X<missing VAR> P, As, Sb) monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3.0, 'can', 4]

As
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(103926, 103926)
A comparative study of the thermoelectric performance of graphene-like BX<missing VAR> (X<missing VAR> P, As, Sb) monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 3.0, 'can', 4]

Sb
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(103929, 103929)
A comparative study of the thermoelectric performance of graphene-like BX<missing VAR> (X<missing VAR> P, As, Sb) monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 3.0, 'can', 4]

(BP)
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(103958, 103961)
 The electronic and phonon transport properties of graphene-like boronphosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) monolayers areinvestigated using first-principles calculations and Boltzmann theory.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 3.0, 'can', 3]

(BAs)
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(103968, 103971)
 The electronic and phonon transport properties of graphene-like boronphosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) monolayers areinvestigated using first-principles calculations and Boltzmann theory.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 3.0, 'can', 3]

(BSb)
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(103980, 103983)
 The electronic and phonon transport properties of graphene-like boronphosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) monolayers areinvestigated using first-principles calculations and Boltzmann theory.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 3.0, 'can', 3]

BAs
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(104048, 104049)
 Byconsidering both the phonon-phonon and electron-phonon scatterings, wedemonstrate that the strong bond anharmonicity in the BAs and BSb monolayerscan dramatically suppress the phonon relaxation time but hardly affects that ofelectrons.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 3.0, 'can', 2]

BSb
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(104053, 104054)
 Byconsidering both the phonon-phonon and electron-phonon scatterings, wedemonstrate that the strong bond anharmonicity in the BAs and BSb monolayerscan dramatically suppress the phonon relaxation time but hardly affects that ofelectrons.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 3.0, 'can', 2]

As
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(104087, 104087)
 As a consequence, both systems exhibit comparable power factors withthat of the BP monolayer but much lower lattice thermal conductivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 3.0, 'can', 1]

BP
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(104115, 104116)
 As a consequence, both systems exhibit comparable power factors withthat of the BP monolayer but much lower lattice thermal conductivities.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 3.0, 'can', 1]

BAs
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(104157, 104158)
Accordingly, a maximum ZT values above 3.0 can be achieved in both BAs and BSbmonolayers at optimized carrier concentrations.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 3.0, 'can', 0]

BSb
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(104162, 104163)
Accordingly, a maximum ZT values above 3.0 can be achieved in both BAs and BSbmonolayers at optimized carrier concentrations.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3.0, 'can', 0]

BSb
###A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers|Z. Z. Zhou,H. J. Liu,D. D. Fan,G. H. Cao###
(104206, 104207)
 Interestingly, very similar p<missing VAR>-and n<missing VAR>-type thermoelectric performance is observed in the BSb monolayer alongthe armchair direction, which is of vital importance in the fabrication ofthermoelectric modules with comparable efficiencies.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 3.0, 'can', 1]

FeRuTiSi
###Investigation of Thermoelectric properties of Magnetic Insulator FeRuTiSi Using First Principle Calculation|Saurabh Singh,Shubham Singh,Nitinkumar Bijewar,Ashish Kumar###
(104273, 104276)
Investigation of Thermoelectric properties of Magnetic Insulator FeRuTiSi Using First Principle Calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 0.59, 'eV', 3],[229.0, -14, 's', 4],[311.0, 840, 'K', 5]

In
###Investigation of Thermoelectric properties of Magnetic Insulator FeRuTiSi Using First Principle Calculation|Saurabh Singh,Shubham Singh,Nitinkumar Bijewar,Ashish Kumar###
(104287, 104287)
 In this work, we have investigated the electronic structure andthermoelectric properties of quaternary heusler alloy, FeRuTiSi, using firstprinciple DFT tools implemented in WIE<missing VAR>N2k<missing VAR> and BoltzTraP code.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 0.59, 'eV', 2],[218.0, -14, 's', 3],[300.0, 840, 'K', 4]

FeRuTiSi
###Investigation of Thermoelectric properties of Magnetic Insulator FeRuTiSi Using First Principle Calculation|Saurabh Singh,Shubham Singh,Nitinkumar Bijewar,Ashish Kumar###
(104322, 104325)
 In this work, we have investigated the electronic structure andthermoelectric properties of quaternary heusler alloy, FeRuTiSi, using firstprinciple DFT tools implemented in WIE<missing VAR>N2k<missing VAR> and BoltzTraP code.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0.59, 'eV', 2],[180.0, -14, 's', 3],[262.0, 840, 'K', 4]

WI
###Investigation of Thermoelectric properties of Magnetic Insulator FeRuTiSi Using First Principle Calculation|Saurabh Singh,Shubham Singh,Nitinkumar Bijewar,Ashish Kumar###
(104345, 104346)
 In this work, we have investigated the electronic structure andthermoelectric properties of quaternary heusler alloy, FeRuTiSi, using firstprinciple DFT tools implemented in WIE<missing VAR>N2k<missing VAR> and BoltzTraP code.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 0.59, 'eV', 2],[159.0, -14, 's', 3],[241.0, 840, 'K', 4]

N2
###Investigation of Thermoelectric properties of Magnetic Insulator FeRuTiSi Using First Principle Calculation|Saurabh Singh,Shubham Singh,Nitinkumar Bijewar,Ashish Kumar###
(104348, 104349)
 In this work, we have investigated the electronic structure andthermoelectric properties of quaternary heusler alloy, FeRuTiSi, using firstprinciple DFT tools implemented in WIE<missing VAR>N2k<missing VAR> and BoltzTraP code.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 0.59, 'eV', 2],[156.0, -14, 's', 3],[238.0, 840, 'K', 4]

P
###Investigation of Thermoelectric properties of Magnetic Insulator FeRuTiSi Using First Principle Calculation|Saurabh Singh,Shubham Singh,Nitinkumar Bijewar,Ashish Kumar###
(104356, 104356)
 In this work, we have investigated the electronic structure andthermoelectric properties of quaternary heusler alloy, FeRuTiSi, using firstprinciple DFT tools implemented in WIE<missing VAR>N2k<missing VAR> and BoltzTraP code.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 0.59, 'eV', 2],[149.0, -14, 's', 3],[231.0, 840, 'K', 4]

B
###Investigation of Thermoelectric properties of Magnetic Insulator FeRuTiSi Using First Principle Calculation|Saurabh Singh,Shubham Singh,Nitinkumar Bijewar,Ashish Kumar###
(104371, 104371)
 Electronicstructure calculations using T<missing VAR>B-mBJ potential shows appearance of flat band atthe conduction band edge, thus electron in conduction band have the largeeffective mass (me), and therefore mainly contribute for negatively largevalue of Seebeck coefficient (S).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.59, 'eV', 1],[134.0, -14, 's', 2],[216.0, 840, 'K', 3]

(S)
###Investigation of Thermoelectric properties of Magnetic Insulator FeRuTiSi Using First Principle Calculation|Saurabh Singh,Shubham Singh,Nitinkumar Bijewar,Ashish Kumar###
(104450, 104452)
 Electronicstructure calculations using T<missing VAR>B-mBJ potential shows appearance of flat band atthe conduction band edge, thus electron in conduction band have the largeeffective mass (me), and therefore mainly contribute for negatively largevalue of Seebeck coefficient (S).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.59, 'eV', 1],[53.0, -14, 's', 2],[135.0, 840, 'K', 3]

FeRuTiSi
###Investigation of Thermoelectric properties of Magnetic Insulator FeRuTiSi Using First Principle Calculation|Saurabh Singh,Shubham Singh,Nitinkumar Bijewar,Ashish Kumar###
(104568, 104571)
 The maximum figure-of-merit (ZT), for the FeRuTiSi compound isfound to be 0.86 at 840 K, with n<missing VAR>-type doping, which suggests that thisquaternary alloy can be a good candidate among the n<missing VAR>-type material forthermoelectric applications in high-temperature reg<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.59, 'eV', 2],[63.0, -14, 's', 1],[16.0, 840, 'K', 0]

In
###Thermoelectric properties of graphyne from first-principles calculations|P. H. Jiang,H. J. Liu,L. Cheng,D. D. Fan,J. Zhang,J. Wei,J. H. Liang###
(104712, 104712)
 Inthis work, we investigate the thermoelectric properties of gamma-graphyne byperforming first-principles calculations combined with Boltzmann transporttheory for both electron and phonon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 600, 'K', 3],[215.0, 1.5, 'and', 3],[216.0, 1.0, 'can', 3]

At
###Thermoelectric properties of graphyne from first-principles calculations|P. H. Jiang,H. J. Liu,L. Cheng,D. D. Fan,J. Zhang,J. Wei,J. H. Liang###
(104904, 104904)
 At an intermediate temperatureof 600 K, a maximum ZT value of 1.5 and 1.0 can be achieved for the p<missing VAR>- andn<missing VAR>-type systems, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 600, 'K', 0],[23.0, 1.5, 'and', 0],[24.0, 1.0, 'can', 0]

B
###On the Calculation of Lorenz Numbers for Complex Thermoelectric Materials|Xufeng Wang,Vahid Askarpour,Jesse Maassen,Mark Lundstrom###
(105120, 105120)
 Results obtained by assuming that thescattering rate follows the density-of-states show that in the non-degeneratelimit, Lorenz numbers below the commonly assumed lower limit of 2(k<missing VAR>B/q)2 canoccur.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Enhanced figure of merit in nanostructured (Bi, Sb) 2 Te 3 with optimized composition, prepared by a straightforward arc-melting procedure|F Serrano-Sánchez,M Gharsallah,NM Nemes,N Biskup,M Varela,JL Martínez,MT Fernández-Díaz,JA Alonso###
(105321, 105321)
Enhanced figure of merit in nanostructured (Bi, Sb) 2 Te 3 with optimized composition, prepared by a straightforward arc-melting procedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'Te', 0],[6.0, 3, 'with', 0],[44.0, 1950, 's', 1],[262.0, 50, 'nm', 5]

Sb
###Enhanced figure of merit in nanostructured (Bi, Sb) 2 Te 3 with optimized composition, prepared by a straightforward arc-melting procedure|F Serrano-Sánchez,M Gharsallah,NM Nemes,N Biskup,M Varela,JL Martínez,MT Fernández-Díaz,JA Alonso###
(105324, 105324)
Enhanced figure of merit in nanostructured (Bi, Sb) 2 Te 3 with optimized composition, prepared by a straightforward arc-melting procedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'Te', 0],[3.0, 3, 'with', 0],[41.0, 1950, 's', 1],[259.0, 50, 'nm', 5]

Sb
###Enhanced figure of merit in nanostructured (Bi, Sb) 2 Te 3 with optimized composition, prepared by a straightforward arc-melting procedure|F Serrano-Sánchez,M Gharsallah,NM Nemes,N Biskup,M Varela,JL Martínez,MT Fernández-Díaz,JA Alonso###
(105349, 105349)
 Sb-doped Bi2Te3 is known since the 1950s as the best thermoelectric materialfor near-room temperature operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'Te', 1],[22.0, 3, 'with', 1],[16.0, 1950, 's', 0],[234.0, 50, 'nm', 4]

Bi2Te3
###Enhanced figure of merit in nanostructured (Bi, Sb) 2 Te 3 with optimized composition, prepared by a straightforward arc-melting procedure|F Serrano-Sánchez,M Gharsallah,NM Nemes,N Biskup,M Varela,JL Martínez,MT Fernández-Díaz,JA Alonso###
(105353, 105356)
 Sb-doped Bi2Te3 is known since the 1950s as the best thermoelectric materialfor near-room temperature operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 2, 'Te', 1],[26.0, 3, 'with', 1],[9.0, 1950, 's', 0],[227.0, 50, 'nm', 4]

Bi0.35Sb1.65Te3
###Enhanced figure of merit in nanostructured (Bi, Sb) 2 Te 3 with optimized composition, prepared by a straightforward arc-melting procedure|F Serrano-Sánchez,M Gharsallah,NM Nemes,N Biskup,M Varela,JL Martínez,MT Fernández-Díaz,JA Alonso###
(105488, 105493)
 We present a straightforward and fastmethod to synthesize already nanostructured pellets that show an enhanced ZTdue to a remarkably low thermal conductivity and unusually high Seebeckcoefficient for a nominal composition optimized for arc-meltingBi0.35Sb1.65Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.32999999999999996,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2, 'Te', 3],[161.0, 3, 'with', 3],[123.0, 1950, 's', 2],[90.0, 50, 'nm', 2]

Bi2-x
###Enhanced figure of merit in nanostructured (Bi, Sb) 2 Te 3 with optimized composition, prepared by a straightforward arc-melting procedure|F Serrano-Sánchez,M Gharsallah,NM Nemes,N Biskup,M Varela,JL Martínez,MT Fernández-Díaz,JA Alonso###
(105512, 105515)
 We provide a detailed structural analysis of the Bi2-xSbxTe3series based on neutron powder diffraction as a function of composition andtemperature that reveals the important role played by atomic vibrations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[186.0, 2, 'Te', 4],[185.0, 3, 'with', 4],[147.0, 1950, 's', 3],[68.0, 50, 'nm', 1]

Te3
###Enhanced figure of merit in nanostructured (Bi, Sb) 2 Te 3 with optimized composition, prepared by a straightforward arc-melting procedure|F Serrano-Sánchez,M Gharsallah,NM Nemes,N Biskup,M Varela,JL Martínez,MT Fernández-Díaz,JA Alonso###
(105517, 105518)
 We provide a detailed structural analysis of the Bi2-xSbxTe3series based on neutron powder diffraction as a function of composition andtemperature that reveals the important role played by atomic vibrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 2, 'Te', 4],[190.0, 3, 'with', 4],[152.0, 1950, 's', 3],[65.0, 50, 'nm', 1]

Mg3Sb2
###Solid-state Janus nanoprecipitation enables amorphous-like heat conduction in crystalline Mg3Sb2-based thermoelectric materials|Rui Shu,Zhijia Han,Anna Elsukova,Yongbin Zhu,Peng Qin,Feng Jiang,Jun Lu,Per O. Å. Persson,Justinas Palisaitis,Arnaud le Febvrier,Wenqing Zhang,Oana Cojocaru-Mirédin,Yuan Yu,Per Eklund,Weishu Liu###
(105687, 105690)
Solid-state Janus nanoprecipitation enables amorphous-like heat conduction in crystalline Mg3Sb2-based thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 0.6, 'near', 6],[262.0, 1.6, 'at', 6],[263.0, 773, 'K', 6]

Mg3Sb1.5Bi0.5
###Solid-state Janus nanoprecipitation enables amorphous-like heat conduction in crystalline Mg3Sb2-based thermoelectric materials|Rui Shu,Zhijia Han,Anna Elsukova,Yongbin Zhu,Peng Qin,Feng Jiang,Jun Lu,Per O. Å. Persson,Justinas Palisaitis,Arnaud le Febvrier,Wenqing Zhang,Oana Cojocaru-Mirédin,Yuan Yu,Per Eklund,Weishu Liu###
(105799, 105804)
 Here, we uncoverunconventional dual Janus-type nanoprecipitates in Mg3Sb1.5Bi0.5 formed byside-by-side Bi- and Ge-rich appendages, in contrast to separatenanoprecipitate formation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0.6, 'near', 3],[148.0, 1.6, 'at', 3],[149.0, 773, 'K', 3]

Bi
###Solid-state Janus nanoprecipitation enables amorphous-like heat conduction in crystalline Mg3Sb2-based thermoelectric materials|Rui Shu,Zhijia Han,Anna Elsukova,Yongbin Zhu,Peng Qin,Feng Jiang,Jun Lu,Per O. Å. Persson,Justinas Palisaitis,Arnaud le Febvrier,Wenqing Zhang,Oana Cojocaru-Mirédin,Yuan Yu,Per Eklund,Weishu Liu###
(105817, 105817)
 Here, we uncoverunconventional dual Janus-type nanoprecipitates in Mg3Sb1.5Bi0.5 formed byside-by-side Bi- and Ge-rich appendages, in contrast to separatenanoprecipitate formation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.6, 'near', 3],[135.0, 1.6, 'at', 3],[136.0, 773, 'K', 3]

Ge
###Solid-state Janus nanoprecipitation enables amorphous-like heat conduction in crystalline Mg3Sb2-based thermoelectric materials|Rui Shu,Zhijia Han,Anna Elsukova,Yongbin Zhu,Peng Qin,Feng Jiang,Jun Lu,Per O. Å. Persson,Justinas Palisaitis,Arnaud le Febvrier,Wenqing Zhang,Oana Cojocaru-Mirédin,Yuan Yu,Per Eklund,Weishu Liu###
(105822, 105822)
 Here, we uncoverunconventional dual Janus-type nanoprecipitates in Mg3Sb1.5Bi0.5 formed byside-by-side Bi- and Ge-rich appendages, in contrast to separatenanoprecipitate formation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 0.6, 'near', 3],[130.0, 1.6, 'at', 3],[131.0, 773, 'K', 3]

Bi
###Solid-state Janus nanoprecipitation enables amorphous-like heat conduction in crystalline Mg3Sb2-based thermoelectric materials|Rui Shu,Zhijia Han,Anna Elsukova,Yongbin Zhu,Peng Qin,Feng Jiang,Jun Lu,Per O. Å. Persson,Justinas Palisaitis,Arnaud le Febvrier,Wenqing Zhang,Oana Cojocaru-Mirédin,Yuan Yu,Per Eklund,Weishu Liu###
(105862, 105862)
 These Janus nanoprecipitates result from localco-melting of Bi and Ge during sintering, enabling an amorphous-like latticethermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 0.6, 'near', 2],[90.0, 1.6, 'at', 2],[91.0, 773, 'K', 2]

Ge
###Solid-state Janus nanoprecipitation enables amorphous-like heat conduction in crystalline Mg3Sb2-based thermoelectric materials|Rui Shu,Zhijia Han,Anna Elsukova,Yongbin Zhu,Peng Qin,Feng Jiang,Jun Lu,Per O. Å. Persson,Justinas Palisaitis,Arnaud le Febvrier,Wenqing Zhang,Oana Cojocaru-Mirédin,Yuan Yu,Per Eklund,Weishu Liu###
(105866, 105866)
 These Janus nanoprecipitates result from localco-melting of Bi and Ge during sintering, enabling an amorphous-like latticethermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 0.6, 'near', 2],[86.0, 1.6, 'at', 2],[87.0, 773, 'K', 2]

Ru2TiGe
###Superparamagnetic and metal-like Ru2TiGe: a propitious thermoelectric material|Sanchayita Mondal,Krishanu Ghosh,R. Ranganathan,Eric Alleno,Chandan Mazumdar###
(106010, 106013)
Superparamagnetic and metal-like Ru2TiGe a propitious thermoelectric material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 20, 'K', 2],[213.0, 1, 'mW', 4],[220.0, 300, 'K', 4],[255.0, 0.025, 'at', 5]

Ru2TiGe
###Superparamagnetic and metal-like Ru2TiGe: a propitious thermoelectric material|Sanchayita Mondal,Krishanu Ghosh,R. Ranganathan,Eric Alleno,Chandan Mazumdar###
(106062, 106065)
 We report a study of structural, magnetic, heat capacity and thermoelectricproperties of a Rubased Heusler alloy, Ru2TiGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 20, 'K', 1],[161.0, 1, 'mW', 3],[168.0, 300, 'K', 3],[203.0, 0.025, 'at', 4]

K2
###Superparamagnetic and metal-like Ru2TiGe: a propitious thermoelectric material|Sanchayita Mondal,Krishanu Ghosh,R. Ranganathan,Eric Alleno,Chandan Mazumdar###
(106229, 106230)
 Though the temperature dependence of resistivityexhibits a metal-like nature, the large value of Seebeck coefficient leads toan appreciable power factor of the order of 1 mW/m<missing VAR>K2 at 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 20, 'K', 2],[3.0, 1, 'mW', 0],[3.0, 300, 'K', 0],[38.0, 0.025, 'at', 1]

K
###Superparamagnetic and metal-like Ru2TiGe: a propitious thermoelectric material|Sanchayita Mondal,Krishanu Ghosh,R. Ranganathan,Eric Alleno,Chandan Mazumdar###
(106273, 106273)
 Large powerfactor as well as low thermal conductivity results in a value of ZT  0.025 at390 K for Ru2TiGe that is orders of magnitude higher than that of the otherpure Heusler alloys and point towards its high potential for practicalthermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 20, 'K', 3],[47.0, 1, 'mW', 1],[40.0, 300, 'K', 1],[5.0, 0.025, 'at', 0]

Ru2TiGe
###Superparamagnetic and metal-like Ru2TiGe: a propitious thermoelectric material|Sanchayita Mondal,Krishanu Ghosh,R. Ranganathan,Eric Alleno,Chandan Mazumdar###
(106277, 106280)
 Large powerfactor as well as low thermal conductivity results in a value of ZT  0.025 at390 K for Ru2TiGe that is orders of magnitude higher than that of the otherpure Heusler alloys and point towards its high potential for practicalthermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 20, 'K', 3],[51.0, 1, 'mW', 1],[44.0, 300, 'K', 1],[9.0, 0.025, 'at', 0]

BiTeCl
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106356, 106358)
Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 15, 'GPa', 3]

BiTeCl
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106387, 106389)
 We report mechanical, optical and thermoelectric properties of recentlyfabricated Janus BiTeCl monolayer using density functional and semi-classicalBoltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 15, 'GPa', 2]

BiTeCl
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106415, 106417)
 Janus BiTeCl monolayer exhibits a direct bandgap,high carrier mobility (103 cm2V-1s<missing VAR>-1) and high opticalabsorption in the UV-visible region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 15, 'GPa', 1]

V
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106443, 106443)
 Janus BiTeCl monolayer exhibits a direct bandgap,high carrier mobility (103 cm2V-1s<missing VAR>-1) and high opticalabsorption in the UV-visible region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 15, 'GPa', 1]

UV
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106464, 106465)
 Janus BiTeCl monolayer exhibits a direct bandgap,high carrier mobility (103 cm2V-1s<missing VAR>-1) and high opticalabsorption in the UV-visible region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[42.0, 15, 'GPa', 1]

BiTeCl
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106485, 106487)
 The mechanical behavior of the JanusBiTeCl monolayer is nearly isotropic having an ideal tensile strength  15 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 15, 'GPa', 0]

W
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106583, 106583)
The higher value of the Gruneisen parameter (gamma), a low value of phonongroup velocity (vg), and very little phonon scattering time (taup) lead tolow lattice thermal conductivity (1.46 W/m<missing VAR>K) of Janus BiTeCl monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 15, 'GPa', 1]

K
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106586, 106586)
The higher value of the Gruneisen parameter (gamma), a low value of phonongroup velocity (vg), and very little phonon scattering time (taup) lead tolow lattice thermal conductivity (1.46 W/m<missing VAR>K) of Janus BiTeCl monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 15, 'GPa', 1]

BiTeCl
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106593, 106595)
The higher value of the Gruneisen parameter (gamma), a low value of phonongroup velocity (vg), and very little phonon scattering time (taup) lead tolow lattice thermal conductivity (1.46 W/m<missing VAR>K) of Janus BiTeCl monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 15, 'GPa', 1]

BiTeCl
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106626, 106628)
 Thecombined effect of thermal conductivity and electronic transport coefficientsof Janus BiTeCl monolayer results in the figure of merit (ZT) in the range of0.43-0.75 at 300-500 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 15, 'GPa', 2]

K
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106668, 106668)
 Thecombined effect of thermal conductivity and electronic transport coefficientsof Janus BiTeCl monolayer results in the figure of merit (ZT) in the range of0.43-0.75 at 300-500 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 15, 'GPa', 2]

BiTeCl
###Mechanical, Optical and Thermoelectric Properties of Janus BiTeCl Monolayer|Poonam Chauhan,Jaspreet Singh,Ashok Kumar###
(106679, 106681)
 Our results suggest Janus BiTeCl monolayer be apotential candidate for optoelectronic and moderate temperature thermoelectricapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 15, 'GPa', 3]

BaSnO3
###Oxide perovskite BaSnO3: A promising high-temperature thermoelectric material for transparent conducting oxides|Xiefei Song,Guangzhao Wang,Li Zhou,Haiyan Yang,Xiaopan Li,Haitao Yang,Yuncheng Shen,Guangyang Xu,Yuhui Luo,Ning Wang###
(106722, 106725)
Oxide perovskite BaSnO3 A promising high-temperature thermoelectric material for transparent conducting oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 900, 'K', 6]

As
###Oxide perovskite BaSnO3: A promising high-temperature thermoelectric material for transparent conducting oxides|Xiefei Song,Guangzhao Wang,Li Zhou,Haiyan Yang,Xiaopan Li,Haitao Yang,Yuncheng Shen,Guangyang Xu,Yuhui Luo,Ning Wang###
(106805, 106805)
 As a potential TE candidate, the TE properties ofperovskite have received extensively attention.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 900, 'K', 3]

O
###Oxide perovskite BaSnO3: A promising high-temperature thermoelectric material for transparent conducting oxides|Xiefei Song,Guangzhao Wang,Li Zhou,Haiyan Yang,Xiaopan Li,Haitao Yang,Yuncheng Shen,Guangyang Xu,Yuhui Luo,Ning Wang###
(106867, 106867)
 We here investigate the TEtransport properties of the transparent conducting oxide (T<missing VAR>CO) BaSnO3 byfirst-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 900, 'K', 2]

BaSnO3
###Oxide perovskite BaSnO3: A promising high-temperature thermoelectric material for transparent conducting oxides|Xiefei Song,Guangzhao Wang,Li Zhou,Haiyan Yang,Xiaopan Li,Haitao Yang,Yuncheng Shen,Guangyang Xu,Yuhui Luo,Ning Wang###
(106870, 106873)
 We here investigate the TEtransport properties of the transparent conducting oxide (T<missing VAR>CO) BaSnO3 byfirst-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 900, 'K', 2]

BaSnO3
###Oxide perovskite BaSnO3: A promising high-temperature thermoelectric material for transparent conducting oxides|Xiefei Song,Guangzhao Wang,Li Zhou,Haiyan Yang,Xiaopan Li,Haitao Yang,Yuncheng Shen,Guangyang Xu,Yuhui Luo,Ning Wang###
(106893, 106896)
 We find that the BaSnO3 perovskite exhibitsoutstanding dynamic and thermal stabilities, which provide excellent electronicand thermal transport properties simultaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 900, 'K', 1]

BaSnO3
###Oxide perovskite BaSnO3: A promising high-temperature thermoelectric material for transparent conducting oxides|Xiefei Song,Guangzhao Wang,Li Zhou,Haiyan Yang,Xiaopan Li,Haitao Yang,Yuncheng Shen,Guangyang Xu,Yuhui Luo,Ning Wang###
(107017, 107020)
 Additionally, doping and nanostructure openprospects for effectively improving the TE properties of BaSnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 900, 'K', 1]

BaSnO3
###Oxide perovskite BaSnO3: A promising high-temperature thermoelectric material for transparent conducting oxides|Xiefei Song,Guangzhao Wang,Li Zhou,Haiyan Yang,Xiaopan Li,Haitao Yang,Yuncheng Shen,Guangyang Xu,Yuhui Luo,Ning Wang###
(107054, 107057)
 Our workprovides a basis for further optimizing the TE transport properties of cubicBaSnO3 and may have worthwhile practical significance for applying cubicperovskite to the high-temperature thermoelectric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 900, 'K', 2]

Na2MgSn
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107127, 107130)
Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na2MgSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 0.8, 'W', 5],[289.0, 0.51, 'and', 6],[290.0, 0.31, 'W', 6],[366.0, 0.4, 'to', 7],[367.0, 4.5, 'ps', 7],[450.0, 0.34, 'at', 9]

In
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107161, 107161)
 In search of high efficient thermoelectricmaterials, low thermal conductivity of a material is essential and critical.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 0.8, 'W', 3],[258.0, 0.51, 'and', 4],[259.0, 0.31, 'W', 4],[335.0, 0.4, 'to', 5],[336.0, 4.5, 'ps', 5],[419.0, 0.34, 'at', 7]

Na2MgSn
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107231, 107234)
Here, we have theoretically investigated the lattice thermal conductivity andthermoelectric properties of layered intermetallic Na2MgSn and Na2MgPbbased on the density functional theory and linearized Boltzmann equation withthe single-mode relaxation-time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 0.8, 'W', 2],[185.0, 0.51, 'and', 3],[186.0, 0.31, 'W', 3],[262.0, 0.4, 'to', 4],[263.0, 4.5, 'ps', 4],[346.0, 0.34, 'at', 6]

Na2MgPb
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107238, 107241)
Here, we have theoretically investigated the lattice thermal conductivity andthermoelectric properties of layered intermetallic Na2MgSn and Na2MgPbbased on the density functional theory and linearized Boltzmann equation withthe single-mode relaxation-time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0.8, 'W', 2],[178.0, 0.51, 'and', 3],[179.0, 0.31, 'W', 3],[255.0, 0.4, 'to', 4],[256.0, 4.5, 'ps', 4],[339.0, 0.34, 'at', 6]

Na2MgSn
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107338, 107341)
Despite of the very low mass density and simple crystal structure ofNa2MgSn, its lattice thermal conductivities along a and c<missing VAR> axes are only1.75 and 0.80 W/m<missing VAR>cdotK respectively at room temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.8, 'W', 0],[78.0, 0.51, 'and', 1],[79.0, 0.31, 'W', 1],[155.0, 0.4, 'to', 2],[156.0, 4.5, 'ps', 2],[239.0, 0.34, 'at', 4]

K
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107374, 107374)
Despite of the very low mass density and simple crystal structure ofNa2MgSn, its lattice thermal conductivities along a and c<missing VAR> axes are only1.75 and 0.80 W/m<missing VAR>cdotK respectively at room temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.8, 'W', 0],[45.0, 0.51, 'and', 1],[46.0, 0.31, 'W', 1],[122.0, 0.4, 'to', 2],[123.0, 4.5, 'ps', 2],[206.0, 0.34, 'at', 4]

Sn
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107387, 107387)
 When Sn isreplaced by the heavier element Pb, its lattice thermal conductivities decreaseremarkably to 0.51 and 0.31 W/m<missing VAR>cdotK respectively along a and c<missing VAR> axes atroom temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.8, 'W', 1],[32.0, 0.51, 'and', 0],[33.0, 0.31, 'W', 0],[109.0, 0.4, 'to', 1],[110.0, 4.5, 'ps', 1],[193.0, 0.34, 'at', 3]

Pb
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107402, 107402)
 When Sn isreplaced by the heavier element Pb, its lattice thermal conductivities decreaseremarkably to 0.51 and 0.31 W/m<missing VAR>cdotK respectively along a and c<missing VAR> axes atroom temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0.8, 'W', 1],[17.0, 0.51, 'and', 0],[18.0, 0.31, 'W', 0],[94.0, 0.4, 'to', 1],[95.0, 4.5, 'ps', 1],[178.0, 0.34, 'at', 3]

K
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107424, 107424)
 When Sn isreplaced by the heavier element Pb, its lattice thermal conductivities decreaseremarkably to 0.51 and 0.31 W/m<missing VAR>cdotK respectively along a and c<missing VAR> axes atroom temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.8, 'W', 1],[5.0, 0.51, 'and', 0],[4.0, 0.31, 'W', 0],[72.0, 0.4, 'to', 1],[73.0, 4.5, 'ps', 1],[156.0, 0.34, 'at', 3]

Na2MgPb
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107516, 107519)
 Combined with previous experimentalmeasurements, the metallic Na2MgPb can not be a good thermoelectricmaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 0.8, 'W', 3],[97.0, 0.51, 'and', 2],[96.0, 0.31, 'W', 2],[20.0, 0.4, 'to', 1],[19.0, 4.5, 'ps', 1],[61.0, 0.34, 'at', 1]

Na2MgSn
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107550, 107553)
 However, we predict that the semiconducting Na2MgSn is a potentialroom-temperature thermoelectric material with a considerable ZT of 0.34 at300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.8, 'W', 4],[131.0, 0.51, 'and', 3],[130.0, 0.31, 'W', 3],[54.0, 0.4, 'to', 2],[53.0, 4.5, 'ps', 2],[27.0, 0.34, 'at', 0]

K
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107585, 107585)
 However, we predict that the semiconducting Na2MgSn is a potentialroom-temperature thermoelectric material with a considerable ZT of 0.34 at300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 0.8, 'W', 4],[166.0, 0.51, 'and', 3],[165.0, 0.31, 'W', 3],[89.0, 0.4, 'to', 2],[88.0, 4.5, 'ps', 2],[5.0, 0.34, 'at', 0]

Na2MgSn
###Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn|Cong Wang,Y. B. Chen,Shu-Hua Yao,Jian Zhou###
(107604, 107607)
 Our calculations not only imply that the intermetallic Na2MgSn is apotential thermoelectric material, but also can motivate more theoretical andexperimental works on the thermoelectric researches in simple layeredintermetallic compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 0.8, 'W', 5],[185.0, 0.51, 'and', 4],[184.0, 0.31, 'W', 4],[108.0, 0.4, 'to', 3],[107.0, 4.5, 'ps', 3],[24.0, 0.34, 'at', 1]

CaMg2Bi2
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(107676, 107680)
Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2, 'and', 1],[58.0, 650, 'K', 1],[182.0, 50, 'K', 3],[307.0, 0.4, 'at', 6],[308.0, 600, 'K', 6],[326.0, 2, 'x', 6],[414.0, 35, '%', 7],[431.0, 973, 'K', 7]

EuMg2Bi2
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(107683, 107687)
Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 2, 'and', 1],[51.0, 650, 'K', 1],[175.0, 50, 'K', 3],[300.0, 0.4, 'at', 6],[301.0, 600, 'K', 6],[319.0, 2, 'x', 6],[407.0, 35, '%', 7],[424.0, 973, 'K', 7]

YbMg2Bi2
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(107692, 107696)
Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'and', 1],[42.0, 650, 'K', 1],[166.0, 50, 'K', 3],[291.0, 0.4, 'at', 6],[292.0, 600, 'K', 6],[310.0, 2, 'x', 6],[398.0, 35, '%', 7],[415.0, 973, 'K', 7]

CaMg2Bi2
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(107709, 107713)
 The thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2were characterized between 2 and 650K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'and', 0],[25.0, 650, 'K', 0],[149.0, 50, 'K', 2],[274.0, 0.4, 'at', 5],[275.0, 600, 'K', 5],[293.0, 2, 'x', 5],[381.0, 35, '%', 6],[398.0, 973, 'K', 6]

EuMg2Bi2
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(107716, 107720)
 The thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2were characterized between 2 and 650K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'and', 0],[18.0, 650, 'K', 0],[142.0, 50, 'K', 2],[267.0, 0.4, 'at', 5],[268.0, 600, 'K', 5],[286.0, 2, 'x', 5],[374.0, 35, '%', 6],[391.0, 973, 'K', 6]

YbMg2Bi2
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(107725, 107729)
 The thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2were characterized between 2 and 650K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'and', 0],[9.0, 650, 'K', 0],[133.0, 50, 'K', 2],[258.0, 0.4, 'at', 5],[259.0, 600, 'K', 5],[277.0, 2, 'x', 5],[365.0, 35, '%', 6],[382.0, 973, 'K', 6]

As
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(107741, 107741)
 As synthesized, the polycrystallinesamples are found to have lower p<missing VAR>-type carrier concentrations thansingle-crystalline samples of the same empirical formula.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'and', 1],[3.0, 650, 'K', 1],[121.0, 50, 'K', 1],[246.0, 0.4, 'at', 4],[247.0, 600, 'K', 4],[265.0, 2, 'x', 4],[353.0, 35, '%', 5],[370.0, 973, 'K', 5]

CaAl2Si2
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(107823, 107827)
 These low carrierconcentration samples possess the highest mobilities yet reported for materialswith the CaAl2Si2 structure type, with a mobility of 740cm2/V/s<missing VAR> observed inEuMg2Bi2 at 50K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, 'and', 2],[85.0, 650, 'K', 2],[35.0, 50, 'K', 0],[160.0, 0.4, 'at', 3],[161.0, 600, 'K', 3],[179.0, 2, 'x', 3],[267.0, 35, '%', 4],[284.0, 973, 'K', 4]

V
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(107846, 107846)
 These low carrierconcentration samples possess the highest mobilities yet reported for materialswith the CaAl2Si2 structure type, with a mobility of 740cm2/V/s<missing VAR> observed inEuMg2Bi2 at 50K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, 'and', 2],[108.0, 650, 'K', 2],[16.0, 50, 'K', 0],[141.0, 0.4, 'at', 3],[142.0, 600, 'K', 3],[160.0, 2, 'x', 3],[248.0, 35, '%', 4],[265.0, 973, 'K', 4]

EuMg2Bi2
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(107855, 107859)
 These low carrierconcentration samples possess the highest mobilities yet reported for materialswith the CaAl2Si2 structure type, with a mobility of 740cm2/V/s<missing VAR> observed inEuMg2Bi2 at 50K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'and', 2],[117.0, 650, 'K', 2],[3.0, 50, 'K', 0],[128.0, 0.4, 'at', 3],[129.0, 600, 'K', 3],[147.0, 2, 'x', 3],[235.0, 35, '%', 4],[252.0, 973, 'K', 4]

YbMg2Bi2
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(107974, 107978)
 The highest figureof merit (zT) is observed in YbMg2Bi2, with zT approaching 0.4 at 600K for twosamples with carrier densities of approximately 2x1018cm-3 and8x<missing VAR>1018cm-3 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 2, 'and', 5],[236.0, 650, 'K', 5],[112.0, 50, 'K', 3],[9.0, 0.4, 'at', 0],[10.0, 600, 'K', 0],[28.0, 2, 'x', 0],[116.0, 35, '%', 1],[133.0, 973, 'K', 1]

CaMg2Bi2
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(108058, 108062)
 Refinements of neutron powder diffractiondata yield similar behavior for the structures of CaMg2Bi2 and YbMg2Bi2, withsmooth lattice expansion and relative expansion in c<missing VAR> being 35% larger thanrelative expansion in a at 973K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 2, 'and', 6],[320.0, 650, 'K', 6],[196.0, 50, 'K', 4],[71.0, 0.4, 'at', 1],[70.0, 600, 'K', 1],[52.0, 2, 'x', 1],[32.0, 35, '%', 0],[49.0, 973, 'K', 0]

YbMg2Bi2
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(108066, 108070)
 Refinements of neutron powder diffractiondata yield similar behavior for the structures of CaMg2Bi2 and YbMg2Bi2, withsmooth lattice expansion and relative expansion in c<missing VAR> being 35% larger thanrelative expansion in a at 973K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 2, 'and', 6],[328.0, 650, 'K', 6],[204.0, 50, 'K', 4],[79.0, 0.4, 'at', 1],[78.0, 600, 'K', 1],[60.0, 2, 'x', 1],[24.0, 35, '%', 0],[41.0, 973, 'K', 0]

Bi
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(108133, 108133)
 First principles calculations reveal anincreasing band gap as Bi is replaced by Sb then As, and subsequent Boltzmanntransport calculations predict an increase in alpha for a given n<missing VAR> associatedwith an increased effective mass as the gap opens.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 2, 'and', 7],[395.0, 650, 'K', 7],[271.0, 50, 'K', 5],[146.0, 0.4, 'at', 2],[145.0, 600, 'K', 2],[127.0, 2, 'x', 2],[39.0, 35, '%', 1],[22.0, 973, 'K', 1]

Sb
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(108141, 108141)
 First principles calculations reveal anincreasing band gap as Bi is replaced by Sb then As, and subsequent Boltzmanntransport calculations predict an increase in alpha for a given n<missing VAR> associatedwith an increased effective mass as the gap opens.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[404.0, 2, 'and', 7],[403.0, 650, 'K', 7],[279.0, 50, 'K', 5],[154.0, 0.4, 'at', 2],[153.0, 600, 'K', 2],[135.0, 2, 'x', 2],[47.0, 35, '%', 1],[30.0, 973, 'K', 1]

As
###Thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2|A. F. May,M. A. McGuire,J. Ma,O. Delaire,A. Huq,D. J. Singh,W. Cai,H. Wang###
(108145, 108145)
 First principles calculations reveal anincreasing band gap as Bi is replaced by Sb then As, and subsequent Boltzmanntransport calculations predict an increase in alpha for a given n<missing VAR> associatedwith an increased effective mass as the gap opens.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 2, 'and', 7],[407.0, 650, 'K', 7],[283.0, 50, 'K', 5],[158.0, 0.4, 'at', 2],[157.0, 600, 'K', 2],[139.0, 2, 'x', 2],[51.0, 35, '%', 1],[34.0, 973, 'K', 1]

Ba0.7Eu0.3Ti1-x
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108311, 108318)
Large thermoelectric response in a diluted ferroelectric system Ba0.7Eu0.3Ti1-xNbxO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[157.0, -613, 'microVolt', 3],[162.0, 400, 'K', 3],[263.0, 0.03, 'composition', 4],[275.0, 0.12, 'at', 4],[323.0, 0.7, 'to', 5],[324.0, 1, 'W', 5],[333.0, 400, 'K', 6]

O3
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108320, 108321)
Large thermoelectric response in a diluted ferroelectric system Ba0.7Eu0.3Ti1-xNbxO3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, -613, 'microVolt', 3],[159.0, 400, 'K', 3],[260.0, 0.03, 'composition', 4],[272.0, 0.12, 'at', 4],[320.0, 0.7, 'to', 5],[321.0, 1, 'W', 5],[330.0, 400, 'K', 6]

Nb
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108352, 108352)
 We investigated the electrical conductivity, thermal conductivity andthermopower as a function of Nb content (x) in Ba0.7Eu0.3Ti1-xNbxO3 (x<missing VAR>  0.001-0.10) in the temperature range T<missing VAR>  400-2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, -613, 'microVolt', 2],[128.0, 400, 'K', 2],[229.0, 0.03, 'composition', 3],[241.0, 0.12, 'at', 3],[289.0, 0.7, 'to', 4],[290.0, 1, 'W', 4],[299.0, 400, 'K', 5]

Ba0.7Eu0.3Ti1-x
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108362, 108369)
 We investigated the electrical conductivity, thermal conductivity andthermopower as a function of Nb content (x) in Ba0.7Eu0.3Ti1-xNbxO3 (x<missing VAR>  0.001-0.10) in the temperature range T<missing VAR>  400-2 K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[106.0, -613, 'microVolt', 2],[111.0, 400, 'K', 2],[212.0, 0.03, 'composition', 3],[224.0, 0.12, 'at', 3],[272.0, 0.7, 'to', 4],[273.0, 1, 'W', 4],[282.0, 400, 'K', 5]

O3
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108371, 108372)
 We investigated the electrical conductivity, thermal conductivity andthermopower as a function of Nb content (x) in Ba0.7Eu0.3Ti1-xNbxO3 (x<missing VAR>  0.001-0.10) in the temperature range T<missing VAR>  400-2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, -613, 'microVolt', 2],[108.0, 400, 'K', 2],[209.0, 0.03, 'composition', 3],[221.0, 0.12, 'at', 3],[269.0, 0.7, 'to', 4],[270.0, 1, 'W', 4],[279.0, 400, 'K', 5]

K
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108400, 108400)
 We investigated the electrical conductivity, thermal conductivity andthermopower as a function of Nb content (x) in Ba0.7Eu0.3Ti1-xNbxO3 (x<missing VAR>  0.001-0.10) in the temperature range T<missing VAR>  400-2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, -613, 'microVolt', 2],[80.0, 400, 'K', 2],[181.0, 0.03, 'composition', 3],[193.0, 0.12, 'at', 3],[241.0, 0.7, 'to', 4],[242.0, 1, 'W', 4],[251.0, 400, 'K', 5]

Nb
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108409, 108409)
 The substitution of Nb destabilizesthe ferroelectric insulating ground state of Ba0.7Eu0.3TiO3 and transforms intoa paramagnetic metal for x<missing VAR>  0.1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, -613, 'microVolt', 1],[71.0, 400, 'K', 1],[172.0, 0.03, 'composition', 2],[184.0, 0.12, 'at', 2],[232.0, 0.7, 'to', 3],[233.0, 1, 'W', 3],[242.0, 400, 'K', 4]

Ba0.7Eu0.3TiO3
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108426, 108432)
 The substitution of Nb destabilizesthe ferroelectric insulating ground state of Ba0.7Eu0.3TiO3 and transforms intoa paramagnetic metal for x<missing VAR>  0.1.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, -613, 'microVolt', 1],[48.0, 400, 'K', 1],[149.0, 0.03, 'composition', 2],[161.0, 0.12, 'at', 2],[209.0, 0.7, 'to', 3],[210.0, 1, 'W', 3],[219.0, 400, 'K', 4]

S
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108473, 108473)
 Thermopower is negative in the entirecomposition range (S  -613 microVolt/K at 400 K for x<missing VAR>  0.001) and itsmagnitude decreases with increasing Nb content which suggests doping ofelectrons into empty Ti-3d(t2g) conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, -613, 'microVolt', 0],[7.0, 400, 'K', 0],[108.0, 0.03, 'composition', 1],[120.0, 0.12, 'at', 1],[168.0, 0.7, 'to', 2],[169.0, 1, 'W', 2],[178.0, 400, 'K', 3]

K
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108477, 108477)
 Thermopower is negative in the entirecomposition range (S  -613 microVolt/K at 400 K for x<missing VAR>  0.001) and itsmagnitude decreases with increasing Nb content which suggests doping ofelectrons into empty Ti-3d(t2g) conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, -613, 'microVolt', 0],[3.0, 400, 'K', 0],[104.0, 0.03, 'composition', 1],[116.0, 0.12, 'at', 1],[164.0, 0.7, 'to', 2],[165.0, 1, 'W', 2],[174.0, 400, 'K', 3]

Nb
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108503, 108503)
 Thermopower is negative in the entirecomposition range (S  -613 microVolt/K at 400 K for x<missing VAR>  0.001) and itsmagnitude decreases with increasing Nb content which suggests doping ofelectrons into empty Ti-3d(t2g) conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, -613, 'microVolt', 0],[23.0, 400, 'K', 0],[78.0, 0.03, 'composition', 1],[90.0, 0.12, 'at', 1],[138.0, 0.7, 'to', 2],[139.0, 1, 'W', 2],[148.0, 400, 'K', 3]

Ti
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108522, 108522)
 Thermopower is negative in the entirecomposition range (S  -613 microVolt/K at 400 K for x<missing VAR>  0.001) and itsmagnitude decreases with increasing Nb content which suggests doping ofelectrons into empty Ti-3d(t2g) conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, -613, 'microVolt', 0],[42.0, 400, 'K', 0],[59.0, 0.03, 'composition', 1],[71.0, 0.12, 'at', 1],[119.0, 0.7, 'to', 2],[120.0, 1, 'W', 2],[129.0, 400, 'K', 3]

In
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108537, 108537)
 In this series, thedimensionless figure of merit (ZT) increases with temperature for all thecompositions and the x<missing VAR>  0.03 composition exhibits the maximum ZT ( 0.12 at400 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, -613, 'microVolt', 1],[57.0, 400, 'K', 1],[44.0, 0.03, 'composition', 0],[56.0, 0.12, 'at', 0],[104.0, 0.7, 'to', 1],[105.0, 1, 'W', 1],[114.0, 400, 'K', 2]

K
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108598, 108598)
 In this series, thedimensionless figure of merit (ZT) increases with temperature for all thecompositions and the x<missing VAR>  0.03 composition exhibits the maximum ZT ( 0.12 at400 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, -613, 'microVolt', 1],[118.0, 400, 'K', 1],[17.0, 0.03, 'composition', 0],[5.0, 0.12, 'at', 0],[43.0, 0.7, 'to', 1],[44.0, 1, 'W', 1],[53.0, 400, 'K', 2]

K
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108647, 108647)
K) at 400 K) comparedto other potential high temperature n<missing VAR>-type thermoelectric oxides such ascarrier doped SrTiO3 and CaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, -613, 'microVolt', 3],[167.0, 400, 'K', 3],[66.0, 0.03, 'composition', 2],[54.0, 0.12, 'at', 2],[6.0, 0.7, 'to', 1],[5.0, 1, 'W', 1],[4.0, 400, 'K', 0]

SrTiO3
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108684, 108687)
K) at 400 K) comparedto other potential high temperature n<missing VAR>-type thermoelectric oxides such ascarrier doped SrTiO3 and CaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, -613, 'microVolt', 3],[204.0, 400, 'K', 3],[103.0, 0.03, 'composition', 2],[91.0, 0.12, 'at', 2],[43.0, 0.7, 'to', 1],[42.0, 1, 'W', 1],[33.0, 400, 'K', 0]

CaMnO3
###Large thermoelectric response in a diluted ferroelectric system: Ba0.7Eu0.3Ti1-xNbxO3|KmRubi,R. Mahendiran###
(108691, 108694)
K) at 400 K) comparedto other potential high temperature n<missing VAR>-type thermoelectric oxides such ascarrier doped SrTiO3 and CaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, -613, 'microVolt', 3],[211.0, 400, 'K', 3],[110.0, 0.03, 'composition', 2],[98.0, 0.12, 'at', 2],[50.0, 0.7, 'to', 1],[49.0, 1, 'W', 1],[40.0, 400, 'K', 0]

GaN
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(108762, 108763)
Ultrathin GaN Nanowires Electronic, Thermal, and Thermoelectric Properties.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[407.0, 0.2, 'is', 7],[441.0, 1000, 'K', 8],[512.0, 0.8, 'for', 8],[551.0, 1000, 'K', 9]

N
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(108823, 108823)
 We present a comprehensive computational study of the electronic, thermal,and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over awide range of thicknesses (3--9 nm), doping densities (1018--1020cm-3), and temperatures (300--1000 K).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 0.2, 'is', 6],[381.0, 1000, 'K', 7],[452.0, 0.8, 'for', 7],[491.0, 1000, 'K', 8]

K
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(108879, 108879)
 We present a comprehensive computational study of the electronic, thermal,and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over awide range of thicknesses (3--9 nm), doping densities (1018--1020cm-3), and temperatures (300--1000 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 0.2, 'is', 6],[325.0, 1000, 'K', 7],[396.0, 0.8, 'for', 7],[435.0, 1000, 'K', 8]

GaN
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(109095, 109096)
Throughout the temperature range, the Seebeck coefficient increases while thelattice thermal conductivity decreases with decreasing wire cross section, bothboding well for TE applications of thin GaN NWs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.2, 'is', 2],[108.0, 1000, 'K', 3],[179.0, 0.8, 'for', 3],[218.0, 1000, 'K', 4]

N
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(109098, 109098)
Throughout the temperature range, the Seebeck coefficient increases while thelattice thermal conductivity decreases with decreasing wire cross section, bothboding well for TE applications of thin GaN NWs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.2, 'is', 2],[106.0, 1000, 'K', 3],[177.0, 0.8, 'for', 3],[216.0, 1000, 'K', 4]

N
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(109153, 109153)
 However, at room temperaturethese benefits are eventually overcome by the detrimental effect of surfaceroughness scattering on the electron mobility in very thin NWs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.2, 'is', 1],[51.0, 1000, 'K', 2],[122.0, 0.8, 'for', 2],[161.0, 1000, 'K', 3]

N
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(109182, 109182)
 The highestroom-temperature ZT of 0.2 is achieved for 4-nm-thick NWs, while furtherdownscaling degrades it.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.2, 'is', 0],[22.0, 1000, 'K', 1],[93.0, 0.8, 'for', 1],[132.0, 1000, 'K', 2]

In
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(109198, 109198)
 In contrast, at 1000 K, the electron mobility variesweakly with the NW thickness owing to the dominance of polar optical phononscattering and multiple subbands contributing to transport, so ZT increaseswith increasing confinement, reaching 0.8 for optimally doped 3-nm-thick NWs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0.2, 'is', 1],[6.0, 1000, 'K', 0],[77.0, 0.8, 'for', 0],[116.0, 1000, 'K', 1]

NW
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(109222, 109223)
 In contrast, at 1000 K, the electron mobility variesweakly with the NW thickness owing to the dominance of polar optical phononscattering and multiple subbands contributing to transport, so ZT increaseswith increasing confinement, reaching 0.8 for optimally doped 3-nm-thick NWs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0.2, 'is', 1],[18.0, 1000, 'K', 0],[52.0, 0.8, 'for', 0],[91.0, 1000, 'K', 1]

N
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(109287, 109287)
 In contrast, at 1000 K, the electron mobility variesweakly with the NW thickness owing to the dominance of polar optical phononscattering and multiple subbands contributing to transport, so ZT increaseswith increasing confinement, reaching 0.8 for optimally doped 3-nm-thick NWs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.2, 'is', 1],[83.0, 1000, 'K', 0],[12.0, 0.8, 'for', 0],[27.0, 1000, 'K', 1]

GaN
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(109299, 109300)
The ZT of GaN NWs increases with increasing temperature beyond 1000 K, whichfurther emphasizes their suitability for high-temperature TE applications.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0.2, 'is', 2],[95.0, 1000, 'K', 1],[24.0, 0.8, 'for', 1],[14.0, 1000, 'K', 0]

N
###Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties|A. H. Davoody,E. B. Ramayya,L. N. Maurer,I. Knezevic###
(109302, 109302)
The ZT of GaN NWs increases with increasing temperature beyond 1000 K, whichfurther emphasizes their suitability for high-temperature TE applications.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 0.2, 'is', 2],[98.0, 1000, 'K', 1],[27.0, 0.8, 'for', 1],[12.0, 1000, 'K', 0]

Hf0.75Zr0.25NiSn
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109451, 109456)
 early showed that small amounts of vanadium dopedin Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the changewith the increased density of states near the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 1.3, 'near', 4],[291.0, 850, 'K', 4]

(V)
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109519, 109521)
 We herein report asystematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta)as prospective resonant dopants in enhancing the ZT of n<missing VAR>-type half-Heusleralloys based on Hf0.6Zr0.4NiSn0.995Sb0.005.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 1.3, 'near', 3],[226.0, 850, 'K', 3]

(Nb)
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109526, 109528)
 We herein report asystematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta)as prospective resonant dopants in enhancing the ZT of n<missing VAR>-type half-Heusleralloys based on Hf0.6Zr0.4NiSn0.995Sb0.005.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 1.3, 'near', 3],[219.0, 850, 'K', 3]

(Ta)
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109535, 109537)
 We herein report asystematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta)as prospective resonant dopants in enhancing the ZT of n<missing VAR>-type half-Heusleralloys based on Hf0.6Zr0.4NiSn0.995Sb0.005.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 1.3, 'near', 3],[210.0, 850, 'K', 3]

Hf0.6Zr0.4NiSn0.995Sb0.005
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109574, 109582)
 We herein report asystematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta)as prospective resonant dopants in enhancing the ZT of n<missing VAR>-type half-Heusleralloys based on Hf0.6Zr0.4NiSn0.995Sb0.005.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0.33166666666666667,0.0016666666666666668,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 1.3, 'near', 3],[165.0, 850, 'K', 3]

V
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109587, 109587)
 The V doping was found to increasethe Seebeck coefficient in the temperature range 300-1000 K, consistent with aresonant doping scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 1.3, 'near', 2],[160.0, 850, 'K', 2]

K
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109618, 109618)
 The V doping was found to increasethe Seebeck coefficient in the temperature range 300-1000 K, consistent with aresonant doping scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1.3, 'near', 2],[129.0, 850, 'K', 2]

In
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109635, 109635)
 In contrast, Nb and Ta act as normal n<missing VAR>-type dopants, asevident by the systematic decrease in electrical resistivity and Seebeckcoefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1.3, 'near', 1],[112.0, 850, 'K', 1]

Nb
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109640, 109640)
 In contrast, Nb and Ta act as normal n<missing VAR>-type dopants, asevident by the systematic decrease in electrical resistivity and Seebeckcoefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 1.3, 'near', 1],[107.0, 850, 'K', 1]

Ta
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109644, 109644)
 In contrast, Nb and Ta act as normal n<missing VAR>-type dopants, asevident by the systematic decrease in electrical resistivity and Seebeckcoefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 1.3, 'near', 1],[103.0, 850, 'K', 1]

V
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109709, 109709)
 The combination of enhanced Seebeck coefficient due to thepresence of V resonant states and the reduced thermal conductivity has led to astate-of-the-art ZT of 1.3 near 850 K in n<missing VAR>-type(Hf0.6Zr0.4)0.99V0.01NiSn0.995Sb0.005 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1.3, 'near', 0],[38.0, 850, 'K', 0]

(Hf0.6Zr0.4)0.99V0.01NiSn0.995Sb0.005
###High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys|Long Chen,Yamei Liu,Jian He,Terry M. Tritt,S. Joseph Poon###
(109756, 109769)
 The combination of enhanced Seebeck coefficient due to thepresence of V resonant states and the reduced thermal conductivity has led to astate-of-the-art ZT of 1.3 near 850 K in n<missing VAR>-type(Hf0.6Zr0.4)0.99V0.01NiSn0.995Sb0.005 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0033333333333333335,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.132,0,0,0,0,0,0,0,0,0,0.33166666666666667,0.0016666666666666668,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19799999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1.3, 'near', 0],[9.0, 850, 'K', 0]

F43
###Recent Advances in Thermoelectric Performance of Half-Heusler Compounds|S. Joseph Poon###
(109812, 109813)
 Half-Heusler phases (space group F43m<missing VAR>, C1b) have recently captured muchattention as promising thermoelectric materials for heat-to-electric powerconversion in the mid-to-high temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 1, 'for', 3],[202.0, 2013, ',', 4],[226.0, 1, 'to', 4],[229.0, 1.5, 'for', 4],[254.0, 500, 'to', 4],[255.0, 900, 'degrees', 4]

C1
###Recent Advances in Thermoelectric Performance of Half-Heusler Compounds|S. Joseph Poon###
(109817, 109818)
 Half-Heusler phases (space group F43m<missing VAR>, C1b) have recently captured muchattention as promising thermoelectric materials for heat-to-electric powerconversion in the mid-to-high temperature range.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 1, 'for', 3],[197.0, 2013, ',', 4],[221.0, 1, 'to', 4],[224.0, 1.5, 'for', 4],[249.0, 500, 'to', 4],[250.0, 900, 'degrees', 4]

NiSn
###Recent Advances in Thermoelectric Performance of Half-Heusler Compounds|S. Joseph Poon###
(109883, 109884)
 The most studied ones are theR<missing VAR>NiSn-type half-Heusler compounds, where R<missing VAR> represents refractory metals Hf, Zr,and Ti.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 1, 'for', 2],[131.0, 2013, ',', 3],[155.0, 1, 'to', 3],[158.0, 1.5, 'for', 3],[183.0, 500, 'to', 3],[184.0, 900, 'degrees', 3]

Hf
###Recent Advances in Thermoelectric Performance of Half-Heusler Compounds|S. Joseph Poon###
(109905, 109905)
 The most studied ones are theR<missing VAR>NiSn-type half-Heusler compounds, where R<missing VAR> represents refractory metals Hf, Zr,and Ti.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 1, 'for', 2],[110.0, 2013, ',', 3],[134.0, 1, 'to', 3],[137.0, 1.5, 'for', 3],[162.0, 500, 'to', 3],[163.0, 900, 'degrees', 3]

Zr
###Recent Advances in Thermoelectric Performance of Half-Heusler Compounds|S. Joseph Poon###
(109908, 109908)
 The most studied ones are theR<missing VAR>NiSn-type half-Heusler compounds, where R<missing VAR> represents refractory metals Hf, Zr,and Ti.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1, 'for', 2],[107.0, 2013, ',', 3],[131.0, 1, 'to', 3],[134.0, 1.5, 'for', 3],[159.0, 500, 'to', 3],[160.0, 900, 'degrees', 3]

Ti
###Recent Advances in Thermoelectric Performance of Half-Heusler Compounds|S. Joseph Poon###
(109914, 109914)
 The most studied ones are theR<missing VAR>NiSn-type half-Heusler compounds, where R<missing VAR> represents refractory metals Hf, Zr,and Ti.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 1, 'for', 2],[101.0, 2013, ',', 3],[125.0, 1, 'to', 3],[128.0, 1.5, 'for', 3],[153.0, 500, 'to', 3],[154.0, 900, 'degrees', 3]

C
###Recent Advances in Thermoelectric Performance of Half-Heusler Compounds|S. Joseph Poon###
(110070, 110070)
 Since 2013, the verifiable ZTof half-Heusler compounds has risen from 1 to near 1.5 for both n<missing VAR>- and p<missing VAR>-typecompounds in the temperature range of 500 to 900 degrees C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1, 'for', 1],[55.0, 2013, ',', 0],[31.0, 1, 'to', 0],[28.0, 1.5, 'for', 0],[3.0, 500, 'to', 0],[2.0, 900, 'degrees', 0]

In
###Recent Advances in Thermoelectric Performance of Half-Heusler Compounds|S. Joseph Poon###
(110073, 110073)
 In this briefreview, we summarize recent advances as well as approaches in achieving thehigh ZT reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1, 'for', 2],[58.0, 2013, ',', 1],[34.0, 1, 'to', 1],[31.0, 1.5, 'for', 1],[6.0, 500, 'to', 1],[5.0, 900, 'degrees', 1]

In
###Recent Advances in Thermoelectric Performance of Half-Heusler Compounds|S. Joseph Poon###
(110114, 110114)
 In particular, we discuss the less-exploited strain-reliefeffect and dopant resonant state effect studied by the author and hiscollaborators in more detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 1, 'for', 3],[99.0, 2013, ',', 2],[75.0, 1, 'to', 2],[72.0, 1.5, 'for', 2],[47.0, 500, 'to', 2],[46.0, 900, 'degrees', 2]

Cs
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110238, 110238)
Potential thermoelectric materials mathrmCsM<missing VAR>I3 (M<missing VAR>Sn and Pb) in perovskite structures from the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 1000, 'K', 5],[372.0, 0.63, 'and', 5],[373.0, 0.64, 'for', 5],[414.0, 0.49, 'and', 5]

I3
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110240, 110241)
Potential thermoelectric materials mathrmCsM<missing VAR>I3 (M<missing VAR>Sn and Pb) in perovskite structures from the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 1000, 'K', 5],[369.0, 0.63, 'and', 5],[370.0, 0.64, 'for', 5],[411.0, 0.49, 'and', 5]

Sn
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110245, 110245)
Potential thermoelectric materials mathrmCsM<missing VAR>I3 (M<missing VAR>Sn and Pb) in perovskite structures from the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 1000, 'K', 5],[365.0, 0.63, 'and', 5],[366.0, 0.64, 'for', 5],[407.0, 0.49, 'and', 5]

Pb
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110249, 110249)
Potential thermoelectric materials mathrmCsM<missing VAR>I3 (M<missing VAR>Sn and Pb) in perovskite structures from the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 1000, 'K', 5],[361.0, 0.63, 'and', 5],[362.0, 0.64, 'for', 5],[403.0, 0.49, 'and', 5]

Cs
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110282, 110282)
 The thermoelectric properties of halide perovskites mathrmCsM<missing VAR>I3 (M<missing VAR>Snand Pb) are investigated from a combination of first-principles calculationsand semiclassical Boltzmann transport theory by considering both the electronand phonon transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 1000, 'K', 4],[328.0, 0.63, 'and', 4],[329.0, 0.64, 'for', 4],[370.0, 0.49, 'and', 4]

I3
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110284, 110285)
 The thermoelectric properties of halide perovskites mathrmCsM<missing VAR>I3 (M<missing VAR>Snand Pb) are investigated from a combination of first-principles calculationsand semiclassical Boltzmann transport theory by considering both the electronand phonon transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 1000, 'K', 4],[325.0, 0.63, 'and', 4],[326.0, 0.64, 'for', 4],[367.0, 0.49, 'and', 4]

Sn
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110289, 110289)
 The thermoelectric properties of halide perovskites mathrmCsM<missing VAR>I3 (M<missing VAR>Snand Pb) are investigated from a combination of first-principles calculationsand semiclassical Boltzmann transport theory by considering both the electronand phonon transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 1000, 'K', 4],[321.0, 0.63, 'and', 4],[322.0, 0.64, 'for', 4],[363.0, 0.49, 'and', 4]

Pb
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110294, 110294)
 The thermoelectric properties of halide perovskites mathrmCsM<missing VAR>I3 (M<missing VAR>Snand Pb) are investigated from a combination of first-principles calculationsand semiclassical Boltzmann transport theory by considering both the electronand phonon transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 1000, 'K', 4],[316.0, 0.63, 'and', 4],[317.0, 0.64, 'for', 4],[358.0, 0.49, 'and', 4]

(SOC)
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110386, 110390)
 The electronic part is performed using a modified Beckeand Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC),while the phonon part is computed using generalized gradient approximation(GGA).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 1000, 'K', 3],[220.0, 0.63, 'and', 3],[221.0, 0.64, 'for', 3],[262.0, 0.49, 'and', 3]

SOC
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110430, 110432)
 It is found that SOC has remarkable detrimental effect on n<missing VAR>-type powerfactor, while has a negligible influence in p<missing VAR>-type doping, which can beexplained by considering SOC effect on conduction and valence bands.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 1000, 'K', 2],[178.0, 0.63, 'and', 2],[179.0, 0.64, 'for', 2],[220.0, 0.49, 'and', 2]

SOC
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110486, 110488)
 It is found that SOC has remarkable detrimental effect on n<missing VAR>-type powerfactor, while has a negligible influence in p<missing VAR>-type doping, which can beexplained by considering SOC effect on conduction and valence bands.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 1000, 'K', 2],[122.0, 0.63, 'and', 2],[123.0, 0.64, 'for', 2],[164.0, 0.49, 'and', 2]

CsSnI3
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110524, 110527)
 Calculatedresults show exceptionally low lattice thermal conductivities inmathrmCsSnI3 and mathrmCsPbI3, and the correspondingroom-temperature lattice thermal conductivity is 0.54 mathrmW m<missing VAR>-1K-1 and 0.25 mathrmW m<missing VAR>-1 K-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1000, 'K', 1],[83.0, 0.63, 'and', 1],[84.0, 0.64, 'for', 1],[125.0, 0.49, 'and', 1]

CsPbI3
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110532, 110535)
 Calculatedresults show exceptionally low lattice thermal conductivities inmathrmCsSnI3 and mathrmCsPbI3, and the correspondingroom-temperature lattice thermal conductivity is 0.54 mathrmW m<missing VAR>-1K-1 and 0.25 mathrmW m<missing VAR>-1 K-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1000, 'K', 1],[75.0, 0.63, 'and', 1],[76.0, 0.64, 'for', 1],[117.0, 0.49, 'and', 1]

W
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110560, 110560)
 Calculatedresults show exceptionally low lattice thermal conductivities inmathrmCsSnI3 and mathrmCsPbI3, and the correspondingroom-temperature lattice thermal conductivity is 0.54 mathrmW m<missing VAR>-1K-1 and 0.25 mathrmW m<missing VAR>-1 K-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 1000, 'K', 1],[50.0, 0.63, 'and', 1],[51.0, 0.64, 'for', 1],[92.0, 0.49, 'and', 1]

K
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110567, 110567)
 Calculatedresults show exceptionally low lattice thermal conductivities inmathrmCsSnI3 and mathrmCsPbI3, and the correspondingroom-temperature lattice thermal conductivity is 0.54 mathrmW m<missing VAR>-1K-1 and 0.25 mathrmW m<missing VAR>-1 K-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1000, 'K', 1],[43.0, 0.63, 'and', 1],[44.0, 0.64, 'for', 1],[85.0, 0.49, 'and', 1]

W
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110576, 110576)
 Calculatedresults show exceptionally low lattice thermal conductivities inmathrmCsSnI3 and mathrmCsPbI3, and the correspondingroom-temperature lattice thermal conductivity is 0.54 mathrmW m<missing VAR>-1K-1 and 0.25 mathrmW m<missing VAR>-1 K-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1000, 'K', 1],[34.0, 0.63, 'and', 1],[35.0, 0.64, 'for', 1],[76.0, 0.49, 'and', 1]

K
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110582, 110582)
 Calculatedresults show exceptionally low lattice thermal conductivities inmathrmCsSnI3 and mathrmCsPbI3, and the correspondingroom-temperature lattice thermal conductivity is 0.54 mathrmW m<missing VAR>-1K-1 and 0.25 mathrmW m<missing VAR>-1 K-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1000, 'K', 1],[28.0, 0.63, 'and', 1],[29.0, 0.64, 'for', 1],[70.0, 0.49, 'and', 1]

At
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110587, 110587)
 At 1000 K, the maximal figure ofmerit ZT is up to 0.63 and 0.64 for mathrmCsSnI3 and mathrmCsPbI3with scattering time tau10-14 s<missing VAR>, and the peak ZT is 0.49 and 0.41with tau10-15 s<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 1000, 'K', 0],[23.0, 0.63, 'and', 0],[24.0, 0.64, 'for', 0],[65.0, 0.49, 'and', 0]

CsSnI3
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110614, 110617)
 At 1000 K, the maximal figure ofmerit ZT is up to 0.63 and 0.64 for mathrmCsSnI3 and mathrmCsPbI3with scattering time tau10-14 s<missing VAR>, and the peak ZT is 0.49 and 0.41with tau10-15 s<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1000, 'K', 0],[4.0, 0.63, 'and', 0],[3.0, 0.64, 'for', 0],[35.0, 0.49, 'and', 0]

CsPbI3
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110622, 110625)
 At 1000 K, the maximal figure ofmerit ZT is up to 0.63 and 0.64 for mathrmCsSnI3 and mathrmCsPbI3with scattering time tau10-14 s<missing VAR>, and the peak ZT is 0.49 and 0.41with tau10-15 s<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1000, 'K', 0],[12.0, 0.63, 'and', 0],[11.0, 0.64, 'for', 0],[27.0, 0.49, 'and', 0]

Cs
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110680, 110680)
 These results make us believe that mathrmCsM<missing VAR>I3(M<missing VAR>Sn and Pb) in perovskite structures may be potential thermoelectricmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1000, 'K', 1],[70.0, 0.63, 'and', 1],[69.0, 0.64, 'for', 1],[28.0, 0.49, 'and', 1]

I3
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110682, 110683)
 These results make us believe that mathrmCsM<missing VAR>I3(M<missing VAR>Sn and Pb) in perovskite structures may be potential thermoelectricmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 1000, 'K', 1],[72.0, 0.63, 'and', 1],[71.0, 0.64, 'for', 1],[30.0, 0.49, 'and', 1]

Sn
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110688, 110688)
 These results make us believe that mathrmCsM<missing VAR>I3(M<missing VAR>Sn and Pb) in perovskite structures may be potential thermoelectricmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 1000, 'K', 1],[78.0, 0.63, 'and', 1],[77.0, 0.64, 'for', 1],[36.0, 0.49, 'and', 1]

Pb
###Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations|San-Dong Guo,Jian-Li Wang###
(110692, 110692)
 These results make us believe that mathrmCsM<missing VAR>I3(M<missing VAR>Sn and Pb) in perovskite structures may be potential thermoelectricmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1000, 'K', 1],[82.0, 0.63, 'and', 1],[81.0, 0.64, 'for', 1],[40.0, 0.49, 'and', 1]

F
###Maximization of the thermoelectric cooling of graded Peltier by analytical heat equation resolution|E. Thiébaut,C. Goupil,F. Pesty,Y. D'Angelo,G. Guegan,P. Lecoeur###
(110793, 110793)
 The use of inhomogeneous, FGM(functionally graded materials) may be adopted in order to increase maximumcooling without improvement of the zT (figure of merit), however these systemsare usually based on the assumption that the local optimization of the zT isthe suitable criterion to increase thermoelectric performances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 36, '%', 3]

In
###Maximization of the thermoelectric cooling of graded Peltier by analytical heat equation resolution|E. Thiébaut,C. Goupil,F. Pesty,Y. D'Angelo,G. Guegan,P. Lecoeur###
(110897, 110897)
 In the presentpaper, we solved the heat equation in a graded material and performed bothanalytic and numerical analysis of a graded Peltier cooler.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 36, '%', 2]

Ba
###Thermoelectric properties of Ba-Cu-Si clathrates|X. Yan,M. X. Chen,S. Laumann,E. Bauer,P. Rogl,R. Podloucky,S. Paschen###
(111936, 111936)
Thermoelectric properties of Ba-Cu-Si clathrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 7, ',', 1],[178.0, 6, ',', 4],[355.0, 0.28, 'is', 7]

Cu
###Thermoelectric properties of Ba-Cu-Si clathrates|X. Yan,M. X. Chen,S. Laumann,E. Bauer,P. Rogl,R. Podloucky,S. Paschen###
(111938, 111938)
Thermoelectric properties of Ba-Cu-Si clathrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 7, ',', 1],[176.0, 6, ',', 4],[353.0, 0.28, 'is', 7]

Si
###Thermoelectric properties of Ba-Cu-Si clathrates|X. Yan,M. X. Chen,S. Laumann,E. Bauer,P. Rogl,R. Podloucky,S. Paschen###
(111940, 111940)
Thermoelectric properties of Ba-Cu-Si clathrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 7, ',', 1],[174.0, 6, ',', 4],[351.0, 0.28, 'is', 7]

I
###Thermoelectric properties of Ba-Cu-Si clathrates|X. Yan,M. X. Chen,S. Laumann,E. Bauer,P. Rogl,R. Podloucky,S. Paschen###
(111955, 111955)
 Thermoelectric properties of the type-I clathrates Ba8Cux<missing VAR>Si46-x(3.6 leq x<missing VAR> leq 7, x<missing VAR>  nominal Cu content) are investigated bothexperimentally and theoretically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 7, ',', 0],[159.0, 6, ',', 3],[336.0, 0.28, 'is', 6]

Ba8Cu
###Thermoelectric properties of Ba-Cu-Si clathrates|X. Yan,M. X. Chen,S. Laumann,E. Bauer,P. Rogl,R. Podloucky,S. Paschen###
(111959, 111961)
 Thermoelectric properties of the type-I clathrates Ba8Cux<missing VAR>Si46-x(3.6 leq x<missing VAR> leq 7, x<missing VAR>  nominal Cu content) are investigated bothexperimentally and theoretically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8888888888888888,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 7, ',', 0],[153.0, 6, ',', 3],[330.0, 0.28, 'is', 6]

Si46-x
###Thermoelectric properties of Ba-Cu-Si clathrates|X. Yan,M. X. Chen,S. Laumann,E. Bauer,P. Rogl,R. Podloucky,S. Paschen###
(111963, 111966)
 Thermoelectric properties of the type-I clathrates Ba8Cux<missing VAR>Si46-x(3.6 leq x<missing VAR> leq 7, x<missing VAR>  nominal Cu content) are investigated bothexperimentally and theoretically.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[12.0, 7, ',', 0],[148.0, 6, ',', 3],[325.0, 0.28, 'is', 6]

Cu
###Thermoelectric properties of Ba-Cu-Si clathrates|X. Yan,M. X. Chen,S. Laumann,E. Bauer,P. Rogl,R. Podloucky,S. Paschen###
(111986, 111986)
 Thermoelectric properties of the type-I clathrates Ba8Cux<missing VAR>Si46-x(3.6 leq x<missing VAR> leq 7, x<missing VAR>  nominal Cu content) are investigated bothexperimentally and theoretically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 7, ',', 0],[128.0, 6, ',', 3],[305.0, 0.28, 'is', 6]

S
###Thermoelectric properties of Ba-Cu-Si clathrates|X. Yan,M. X. Chen,S. Laumann,E. Bauer,P. Rogl,R. Podloucky,S. Paschen###
(112081, 112081)
 Temperature-dependent electricalresistivity, rho(T), and the Seebeck coefficient, S(T), measurementsreveal metal-like behavior for all samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 7, ',', 2],[33.0, 6, ',', 1],[210.0, 0.28, 'is', 4]

S
###Thermoelectric properties of Ba-Cu-Si clathrates|X. Yan,M. X. Chen,S. Laumann,E. Bauer,P. Rogl,R. Podloucky,S. Paschen###
(112251, 112251)
 On the basis of the density functional theory results theexperimentally observed compositional dependence of rho(T) and S(T) of thewhole sample series is analyzed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 7, ',', 5],[137.0, 6, ',', 2],[40.0, 0.28, 'is', 1]

C
###Thermoelectric properties of Ba-Cu-Si clathrates|X. Yan,M. X. Chen,S. Laumann,E. Bauer,P. Rogl,R. Podloucky,S. Paschen###
(112310, 112310)
 The highest dimensionless thermoelectricfigure of merit ZT of 0.28 is reached for a melt-spun sample at600circC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 7, ',', 6],[196.0, 6, ',', 3],[19.0, 0.28, 'is', 0]

LaCoO3
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112369, 112372)
Thermoelectric Properties of (1-x)LaCoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 0.09, 'for', 9],[364.0, 620, 'K', 10],[404.0, 620, 'K', 10]

La0.7Sr0.3MnO3
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112375, 112381)
x<missing VAR>La0.7Sr0.3MnO3 Composite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 0.09, 'for', 8],[355.0, 620, 'K', 9],[395.0, 620, 'K', 9]

LaCoO3
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112408, 112411)
 We report the thermoelectric (TE) properties of (1-x)LaCoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 0.09, 'for', 7],[325.0, 620, 'K', 8],[365.0, 620, 'K', 8]

La0.7Sr0.3MnO3
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112414, 112420)
x<missing VAR>La0.7Sr0.3MnO3(0 < x<missing VAR> < 0.10) composite in a temperature range 320-800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 0.09, 'for', 6],[316.0, 620, 'K', 7],[356.0, 620, 'K', 7]

K
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112449, 112449)
x<missing VAR>La0.7Sr0.3MnO3(0 < x<missing VAR> < 0.10) composite in a temperature range 320-800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 0.09, 'for', 6],[287.0, 620, 'K', 7],[327.0, 620, 'K', 7]

La0.7Sr0.3MnO3
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112457, 112463)
 Addition ofLa0.7Sr0.3MnO3 to LaCoO3 in small amount (5 weight %) improves the overallSeebeck coefficient (alpha) at higher temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 0.09, 'for', 5],[273.0, 620, 'K', 6],[313.0, 620, 'K', 6]

LaCoO3
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112467, 112470)
 Addition ofLa0.7Sr0.3MnO3 to LaCoO3 in small amount (5 weight %) improves the overallSeebeck coefficient (alpha) at higher temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 0.09, 'for', 5],[266.0, 620, 'K', 6],[306.0, 620, 'K', 6]

O
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112587, 112587)
 The decrease in electrical conductivity of the composite at hightemperature may be attributed to the insulating nature of the LSMO above roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 0.09, 'for', 3],[149.0, 620, 'K', 4],[189.0, 620, 'K', 4]

O
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112640, 112640)
 Thermal conductivity (k<missing VAR>appa) of all the samples increases withan increase in the temperature but decreases with increasing LSMO content.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.09, 'for', 2],[96.0, 620, 'K', 3],[136.0, 620, 'K', 3]

LaCoO3.0
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112721, 112724)
 A maximum valueof 0.09 for the figure of merit (ZT) is obtained for0.95LaCoO3.0.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.09, 'for', 0],[12.0, 620, 'K', 1],[52.0, 620, 'K', 1]

La0.7Sr0.3MnO3
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112727, 112733)
05La0.7Sr0.3MnO3 at 620 K which is significantly higher than theZT of either of LaCoO3 or La0.7Sr0.3MnO3 at 620 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.09, 'for', 1],[3.0, 620, 'K', 0],[43.0, 620, 'K', 0]

LaCoO3
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112760, 112763)
05La0.7Sr0.3MnO3 at 620 K which is significantly higher than theZT of either of LaCoO3 or La0.7Sr0.3MnO3 at 620 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.09, 'for', 1],[24.0, 620, 'K', 0],[13.0, 620, 'K', 0]

La0.7Sr0.3MnO3
###Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite|Ashutosh Kumar,Karuna Kumari,B. Jayachandran,D. Sivaprahasam,Ajay D Thakur###
(112767, 112773)
05La0.7Sr0.3MnO3 at 620 K which is significantly higher than theZT of either of LaCoO3 or La0.7Sr0.3MnO3 at 620 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 0.09, 'for', 1],[31.0, 620, 'K', 0],[3.0, 620, 'K', 0]

Mg
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113254, 113254)
Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 400, 'K', 5]

Si
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113256, 113256)
Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 400, 'K', 5]

Sn
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113258, 113258)
Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 400, 'K', 5]

Mg
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113263, 113263)
 Mg-Si-Sn solid solutions have interesting and useful semiconductingproperties particularly for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 400, 'K', 4]

Si
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113265, 113265)
 Mg-Si-Sn solid solutions have interesting and useful semiconductingproperties particularly for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 400, 'K', 4]

Sn
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113267, 113267)
 Mg-Si-Sn solid solutions have interesting and useful semiconductingproperties particularly for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 400, 'K', 4]

C
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113378, 113378)
 We employed a combination ofhigh energy ball milling and current activated pressure assisted densification(CAPAD) to induce and complete phase transformation from cubic to trigonalphase, forming dense trigonal composites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 400, 'K', 2]

P
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113380, 113380)
 We employed a combination ofhigh energy ball milling and current activated pressure assisted densification(CAPAD) to induce and complete phase transformation from cubic to trigonalphase, forming dense trigonal composites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 400, 'K', 2]

Mg
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113441, 113441)
 This is the first successfulpreparation of the trigonal phase in Mg-Si-Sn stem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 400, 'K', 1]

Si
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113443, 113443)
 This is the first successfulpreparation of the trigonal phase in Mg-Si-Sn stem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 400, 'K', 1]

Sn
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113445, 113445)
 This is the first successfulpreparation of the trigonal phase in Mg-Si-Sn stem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 400, 'K', 1]

In
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113450, 113450)
 In addition, we report thetransport properties of both the cubic and trigonal composites measured in the160 to 400 K range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 400, 'K', 0]

Mg
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113553, 113553)
 The electrical conductivity of the trigonal composites wasseveral times higher compared to the cubic counterparts while thermalconductivity is lower but in the range of previously reported Mg-Si-Snmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 400, 'K', 1]

Si
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113555, 113555)
 The electrical conductivity of the trigonal composites wasseveral times higher compared to the cubic counterparts while thermalconductivity is lower but in the range of previously reported Mg-Si-Snmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 400, 'K', 1]

Sn
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113557, 113557)
 The electrical conductivity of the trigonal composites wasseveral times higher compared to the cubic counterparts while thermalconductivity is lower but in the range of previously reported Mg-Si-Snmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 400, 'K', 1]

Mg
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113638, 113638)
 The ZT of the cubic samples,however is higher than previously reported for un-doped Mg-Si-Sn solidsolutions which is promising for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 400, 'K', 3]

Si
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113640, 113640)
 The ZT of the cubic samples,however is higher than previously reported for un-doped Mg-Si-Sn solidsolutions which is promising for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 400, 'K', 3]

Sn
###Synthesis, processing and transport properties of cubic and trigonal solid solutions in the Mg-Si-Sn system|Pathikumar Sellappan,Anthony Y. Fong,Masayuki Murata,Yasuhiro Kodera,Javier E. Garay###
(113642, 113642)
 The ZT of the cubic samples,however is higher than previously reported for un-doped Mg-Si-Sn solidsolutions which is promising for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 400, 'K', 3]

PbTe
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113688, 113689)
Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 1, 'at', 7],[374.0, 1.4, 'at', 8],[375.0, 600, 'K', 8]

CdTe
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113691, 113692)
Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 1, 'at', 7],[371.0, 1.4, 'at', 8],[372.0, 600, 'K', 8]

Cd
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113702, 113702)
Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 1, 'at', 7],[361.0, 1.4, 'at', 8],[362.0, 600, 'K', 8]

PbTe
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113715, 113716)
 High quality p<missing VAR>-type PbTe-CdTe monocrystalline alloys containing up to 10at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 1, 'at', 6],[347.0, 1.4, 'at', 7],[348.0, 600, 'K', 7]

CdTe
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113718, 113719)
 High quality p<missing VAR>-type PbTe-CdTe monocrystalline alloys containing up to 10at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 1, 'at', 6],[344.0, 1.4, 'at', 7],[345.0, 600, 'K', 7]

Cd
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113740, 113740)
 of Cd are obtained by self-selecting vapor transport method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 1, 'at', 5],[323.0, 1.4, 'at', 6],[324.0, 600, 'K', 6]

Cd
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113799, 113799)
 Midinfrared photoluminescence experiments are performed to follow the variation ofthe fundamental energy gap as a function of Cd content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 1, 'at', 4],[264.0, 1.4, 'at', 5],[265.0, 600, 'K', 5]

Pb1-xCd
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113925, 113929)
 It isshown that the heavy-hole band near the Sigma point of the Brillouin zoneplays an important role and is responsible for the Pb1-xCdx<missing VAR>Te holetransport at higher Cd-content.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[100.0, 1, 'at', 2],[134.0, 1.4, 'at', 3],[135.0, 600, 'K', 3]

Te
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113931, 113931)
 It isshown that the heavy-hole band near the Sigma point of the Brillouin zoneplays an important role and is responsible for the Pb1-xCdx<missing VAR>Te holetransport at higher Cd-content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1, 'at', 2],[132.0, 1.4, 'at', 3],[133.0, 600, 'K', 3]

Cd
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113942, 113942)
 It isshown that the heavy-hole band near the Sigma point of the Brillouin zoneplays an important role and is responsible for the Pb1-xCdx<missing VAR>Te holetransport at higher Cd-content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1, 'at', 2],[121.0, 1.4, 'at', 3],[122.0, 600, 'K', 3]

Pb1-xCd
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113970, 113974)
 Our data and their description can serve as thestandard for Pb1-xCdx<missing VAR>Te single crystals with x<missing VAR> up to 0.1.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[55.0, 1, 'at', 1],[89.0, 1.4, 'at', 2],[90.0, 600, 'K', 2]

Te
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(113976, 113976)
 Our data and their description can serve as thestandard for Pb1-xCdx<missing VAR>Te single crystals with x<missing VAR> up to 0.1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1, 'at', 1],[87.0, 1.4, 'at', 2],[88.0, 600, 'K', 2]

Pb1-xCd
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(114005, 114009)
 It isshown, that monocrystalline Pb1-xCdx<missing VAR>Te samples with relatively low Cdcontent of about 1 at.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[20.0, 1, 'at', 0],[54.0, 1.4, 'at', 1],[55.0, 600, 'K', 1]

Te
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(114011, 114011)
 It isshown, that monocrystalline Pb1-xCdx<missing VAR>Te samples with relatively low Cdcontent of about 1 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1, 'at', 0],[52.0, 1.4, 'at', 1],[53.0, 600, 'K', 1]

Cd
###Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content|M. Szot,P. Pfeffer,K. Dybko,A. Szczerbakow,L. Kowalczyk,P. Dziawa,R. Minikayev,T. Zayarnyuk,K. Piotrowski,M. U. Gutowska,A. Szewczyk,T. Story,W. Zawadzki###
(114021, 114021)
 It isshown, that monocrystalline Pb1-xCdx<missing VAR>Te samples with relatively low Cdcontent of about 1 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1, 'at', 0],[42.0, 1.4, 'at', 1],[43.0, 600, 'K', 1]

Nb
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114087, 114087)
Achieving high figure-of-merit in Nb-doped Na0.74CoO2 compound at high temperature region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 300, 'K', 4],[198.0, 1.88, 'W', 4],[216.0, 420, 'K', 4],[224.0, 620, 'K', 4],[236.0, 1.86, 'W', 4],[313.0, 1200, 'K', 6],[358.0, 0.03, 'at', 7],[359.0, 300, 'K', 7],[378.0, 1.7, 'at', 7],[424.0, 500, 'K', 8],[443.0, 500, 'to', 8],[444.0, 1200, 'K', 8],[491.0, 500, 'and', 9],[492.0, 1200, 'K', 9]

Na0.74CoO2
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114091, 114095)
Achieving high figure-of-merit in Nb-doped Na0.74CoO2 compound at high temperature region.
Featurization terminated normally.
0,0,0,0,0,0,0,0.53475935828877,0,0,0.1978609625668449,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.267379679144385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 300, 'K', 4],[190.0, 1.88, 'W', 4],[208.0, 420, 'K', 4],[216.0, 620, 'K', 4],[228.0, 1.86, 'W', 4],[305.0, 1200, 'K', 6],[350.0, 0.03, 'at', 7],[351.0, 300, 'K', 7],[370.0, 1.7, 'at', 7],[416.0, 500, 'K', 8],[435.0, 500, 'to', 8],[436.0, 1200, 'K', 8],[483.0, 500, 'and', 9],[484.0, 1200, 'K', 9]

Na0.74Co0.95Nb0.05O2
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114126, 114133)
 We report the thermoelectric (TE) properties ofNa0.74Co0.95Nb0.05O2 in the temperature range 300-1200 K,as a potential candidate for p<missing VAR>-type thermoelectric material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.53475935828877,0,0,0.1978609625668449,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25401069518716574,0,0,0,0,0,0,0,0,0,0,0,0,0,0.013368983957219251,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 300, 'K', 3],[152.0, 1.88, 'W', 3],[170.0, 420, 'K', 3],[178.0, 620, 'K', 3],[190.0, 1.86, 'W', 3],[267.0, 1200, 'K', 5],[312.0, 0.03, 'at', 6],[313.0, 300, 'K', 6],[332.0, 1.7, 'at', 6],[378.0, 500, 'K', 7],[397.0, 500, 'to', 7],[398.0, 1200, 'K', 7],[445.0, 500, 'and', 8],[446.0, 1200, 'K', 8]

K
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114147, 114147)
 We report the thermoelectric (TE) properties ofNa0.74Co0.95Nb0.05O2 in the temperature range 300-1200 K,as a potential candidate for p<missing VAR>-type thermoelectric material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 300, 'K', 3],[138.0, 1.88, 'W', 3],[156.0, 420, 'K', 3],[164.0, 620, 'K', 3],[176.0, 1.86, 'W', 3],[253.0, 1200, 'K', 5],[298.0, 0.03, 'at', 6],[299.0, 300, 'K', 6],[318.0, 1.7, 'at', 6],[364.0, 500, 'K', 7],[383.0, 500, 'to', 7],[384.0, 1200, 'K', 7],[431.0, 500, 'and', 8],[432.0, 1200, 'K', 8]

(S)
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114183, 114185)
 The experimentalvalues of Seebeck coefficient (S) are  sim  82-121  mu V/K measured inthe temperature range 300-620 K.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 300, 'K', 2],[100.0, 1.88, 'W', 2],[118.0, 420, 'K', 2],[126.0, 620, 'K', 2],[138.0, 1.86, 'W', 2],[215.0, 1200, 'K', 4],[260.0, 0.03, 'at', 5],[261.0, 300, 'K', 5],[280.0, 1.7, 'at', 5],[326.0, 500, 'K', 6],[345.0, 500, 'to', 6],[346.0, 1200, 'K', 6],[393.0, 500, 'and', 7],[394.0, 1200, 'K', 7]

V/K
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114200, 114202)
 The experimentalvalues of Seebeck coefficient (S) are  sim  82-121  mu V/K measured inthe temperature range 300-620 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[57.0, 300, 'K', 2],[83.0, 1.88, 'W', 2],[101.0, 420, 'K', 2],[109.0, 620, 'K', 2],[121.0, 1.86, 'W', 2],[198.0, 1200, 'K', 4],[243.0, 0.03, 'at', 5],[244.0, 300, 'K', 5],[263.0, 1.7, 'at', 5],[309.0, 500, 'K', 6],[328.0, 500, 'to', 6],[329.0, 1200, 'K', 6],[376.0, 500, 'and', 7],[377.0, 1200, 'K', 7]

K
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114219, 114219)
 The experimentalvalues of Seebeck coefficient (S) are  sim  82-121  mu V/K measured inthe temperature range 300-620 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 300, 'K', 2],[66.0, 1.88, 'W', 2],[84.0, 420, 'K', 2],[92.0, 620, 'K', 2],[104.0, 1.86, 'W', 2],[181.0, 1200, 'K', 4],[226.0, 0.03, 'at', 5],[227.0, 300, 'K', 5],[246.0, 1.7, 'at', 5],[292.0, 500, 'K', 6],[311.0, 500, 'to', 6],[312.0, 1200, 'K', 6],[359.0, 500, 'and', 7],[360.0, 1200, 'K', 7]

S
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114230, 114230)
 The positive values of S in the entiretemperature range indicates p<missing VAR>-type behaviour of the compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 300, 'K', 1],[55.0, 1.88, 'W', 1],[73.0, 420, 'K', 1],[81.0, 620, 'K', 1],[93.0, 1.86, 'W', 1],[170.0, 1200, 'K', 3],[215.0, 0.03, 'at', 4],[216.0, 300, 'K', 4],[235.0, 1.7, 'at', 4],[281.0, 500, 'K', 5],[300.0, 500, 'to', 5],[301.0, 1200, 'K', 5],[348.0, 500, 'and', 6],[349.0, 1200, 'K', 6]

At
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114258, 114258)
 At 300 K theexperimental value of thermal conductivity ( kappa ) is  sim  1.88 W/m<missing VAR>-Kthat increases up to  sim  420 K, then decreases till 620 K withcorresponding value  sim  1.86 W/m<missing VAR>-K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 300, 'K', 0],[27.0, 1.88, 'W', 0],[45.0, 420, 'K', 0],[53.0, 620, 'K', 0],[65.0, 1.86, 'W', 0],[142.0, 1200, 'K', 2],[187.0, 0.03, 'at', 3],[188.0, 300, 'K', 3],[207.0, 1.7, 'at', 3],[253.0, 500, 'K', 4],[272.0, 500, 'to', 4],[273.0, 1200, 'K', 4],[320.0, 500, 'and', 5],[321.0, 1200, 'K', 5]

K
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114289, 114289)
 At 300 K theexperimental value of thermal conductivity ( kappa ) is  sim  1.88 W/m<missing VAR>-Kthat increases up to  sim  420 K, then decreases till 620 K withcorresponding value  sim  1.86 W/m<missing VAR>-K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 300, 'K', 0],[4.0, 1.88, 'W', 0],[14.0, 420, 'K', 0],[22.0, 620, 'K', 0],[34.0, 1.86, 'W', 0],[111.0, 1200, 'K', 2],[156.0, 0.03, 'at', 3],[157.0, 300, 'K', 3],[176.0, 1.7, 'at', 3],[222.0, 500, 'K', 4],[241.0, 500, 'to', 4],[242.0, 1200, 'K', 4],[289.0, 500, 'and', 5],[290.0, 1200, 'K', 5]

K
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114327, 114327)
 At 300 K theexperimental value of thermal conductivity ( kappa ) is  sim  1.88 W/m<missing VAR>-Kthat increases up to  sim  420 K, then decreases till 620 K withcorresponding value  sim  1.86 W/m<missing VAR>-K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 300, 'K', 0],[42.0, 1.88, 'W', 0],[24.0, 420, 'K', 0],[16.0, 620, 'K', 0],[4.0, 1.86, 'W', 0],[73.0, 1200, 'K', 2],[118.0, 0.03, 'at', 3],[119.0, 300, 'K', 3],[138.0, 1.7, 'at', 3],[184.0, 500, 'K', 4],[203.0, 500, 'to', 4],[204.0, 1200, 'K', 4],[251.0, 500, 'and', 5],[252.0, 1200, 'K', 5]

S
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114352, 114352)
 To understand the experimentallyobserved transport properties, we have calculated S and rho of thiscompound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 300, 'K', 1],[67.0, 1.88, 'W', 1],[49.0, 420, 'K', 1],[41.0, 620, 'K', 1],[29.0, 1.86, 'W', 1],[48.0, 1200, 'K', 1],[93.0, 0.03, 'at', 2],[94.0, 300, 'K', 2],[113.0, 1.7, 'at', 2],[159.0, 500, 'K', 3],[178.0, 500, 'to', 3],[179.0, 1200, 'K', 3],[226.0, 500, 'and', 4],[227.0, 1200, 'K', 4]

S
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114408, 114408)
 Then, based on theoretical understanding, we have estimatedtextitfigure-of-merit (ZT) up to 1200 K by using calculated S and rhovalues with extrapolated experimental kappa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 300, 'K', 2],[123.0, 1.88, 'W', 2],[105.0, 420, 'K', 2],[97.0, 620, 'K', 2],[85.0, 1.86, 'W', 2],[8.0, 1200, 'K', 0],[37.0, 0.03, 'at', 1],[38.0, 300, 'K', 1],[57.0, 1.7, 'at', 1],[103.0, 500, 'K', 2],[122.0, 500, 'to', 2],[123.0, 1200, 'K', 2],[170.0, 500, 'and', 3],[171.0, 1200, 'K', 3]

K
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114470, 114470)
 The value of ZT is found to besim 0.03 at 300 K, whereas, the highest value is observed as sim 1.7 at1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 300, 'K', 3],[185.0, 1.88, 'W', 3],[167.0, 420, 'K', 3],[159.0, 620, 'K', 3],[147.0, 1.86, 'W', 3],[70.0, 1200, 'K', 1],[25.0, 0.03, 'at', 0],[24.0, 300, 'K', 0],[5.0, 1.7, 'at', 0],[41.0, 500, 'K', 1],[60.0, 500, 'to', 1],[61.0, 1200, 'K', 1],[108.0, 500, 'and', 2],[109.0, 1200, 'K', 2]

Na0.74Co0.95Nb0.05O2
###Achieving high figure-of-merit in Nb-doped Na$_{0.74}$CoO$_{2}$ compound at high temperature region|Arzena Khatun,Shamim Sk,Jayashree Pati,R. S. Dhaka,Sudhir K. Pandey###
(114595, 114602)
 This result suggests thatNa0.74Co0.95Nb0.05O2 compound can be used as a p<missing VAR>-leg formaking high temperature TE generator (TEG).
Featurization terminated normally.
0,0,0,0,0,0,0,0.53475935828877,0,0,0.1978609625668449,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25401069518716574,0,0,0,0,0,0,0,0,0,0,0,0,0,0.013368983957219251,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 300, 'K', 6],[310.0, 1.88, 'W', 6],[292.0, 420, 'K', 6],[284.0, 620, 'K', 6],[272.0, 1.86, 'W', 6],[195.0, 1200, 'K', 4],[150.0, 0.03, 'at', 3],[149.0, 300, 'K', 3],[130.0, 1.7, 'at', 3],[84.0, 500, 'K', 2],[65.0, 500, 'to', 2],[64.0, 1200, 'K', 2],[17.0, 500, 'and', 1],[16.0, 1200, 'K', 1]

V/K
###Thermoelectric figure of merit enhancement in dissipative superlattice structures|Pankaj Priyadarshi,Bhaskaran Muralidharan###
(114906, 114908)
 There is also areasonable enhancement in the Seebeck coefficient, with a maximum of 1000muV/K, which we attribute to an enhancement in electronic filtering arising fromthe non-coherent transport.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 18, 'can', 1]

SrGaSnH
###First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH|Enamul Haque,Mizanur Rahaman###
(115152, 115155)
First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 300, 'K', 6],[323.0, 10, 'mW', 7],[333.0, 300, 'K', 7],[413.0, 700, 'K', 8]

SrGaSnH
###First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH|Enamul Haque,Mizanur Rahaman###
(115213, 115216)
The constituents of SrGaSnH are earth-abundant and non-toxic, thus we havechosen SrSnGaH to study its structural stability and thermoelectric propertiesby using DFT, D<missing VAR>FPT<missing VAR>, and semi-classical Boltzmann transport theory.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 300, 'K', 4],[262.0, 10, 'mW', 5],[272.0, 300, 'K', 5],[352.0, 700, 'K', 6]

SrSnGaH
###First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH|Enamul Haque,Mizanur Rahaman###
(115240, 115243)
The constituents of SrGaSnH are earth-abundant and non-toxic, thus we havechosen SrSnGaH to study its structural stability and thermoelectric propertiesby using DFT, D<missing VAR>FPT<missing VAR>, and semi-classical Boltzmann transport theory.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 300, 'K', 4],[235.0, 10, 'mW', 5],[245.0, 300, 'K', 5],[325.0, 700, 'K', 6]

FP
###First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH|Enamul Haque,Mizanur Rahaman###
(115272, 115273)
The constituents of SrGaSnH are earth-abundant and non-toxic, thus we havechosen SrSnGaH to study its structural stability and thermoelectric propertiesby using DFT, D<missing VAR>FPT<missing VAR>, and semi-classical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 300, 'K', 4],[205.0, 10, 'mW', 5],[215.0, 300, 'K', 5],[295.0, 700, 'K', 6]

V
###First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH|Enamul Haque,Mizanur Rahaman###
(115346, 115346)
The electronic structure calculation discloses that it is an indirect bandgap(0.63 e<missing VAR>V by mBJ+SOC) semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 300, 'K', 2],[132.0, 10, 'mW', 3],[142.0, 300, 'K', 3],[222.0, 700, 'K', 4]

C
###First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH|Enamul Haque,Mizanur Rahaman###
(115356, 115356)
The electronic structure calculation discloses that it is an indirect bandgap(0.63 e<missing VAR>V by mBJ+SOC) semiconductor.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 300, 'K', 2],[122.0, 10, 'mW', 3],[132.0, 300, 'K', 3],[212.0, 700, 'K', 4]

W
###First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH|Enamul Haque,Mizanur Rahaman###
(115435, 115435)
 On theother side, the weak phonon scattering leads to high lattice thermalconductivity 10.5 W m<missing VAR>-1K-1 at 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 300, 'K', 0],[43.0, 10, 'mW', 1],[53.0, 300, 'K', 1],[133.0, 700, 'K', 2]

K
###First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH|Enamul Haque,Mizanur Rahaman###
(115440, 115440)
 On theother side, the weak phonon scattering leads to high lattice thermalconductivity 10.5 W m<missing VAR>-1K-1 at 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 300, 'K', 0],[38.0, 10, 'mW', 1],[48.0, 300, 'K', 1],[128.0, 700, 'K', 2]

(PF)
###First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH|Enamul Haque,Mizanur Rahaman###
(115456, 115459)
 Although the power factor (PF) is veryhigh along the x<missing VAR>-axis (above 10 mW m<missing VAR>-1K-2 at 300 K), such large kl dramaticallyreduces ZT.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 300, 'K', 1],[19.0, 10, 'mW', 0],[29.0, 300, 'K', 0],[109.0, 700, 'K', 1]

K
###First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH|Enamul Haque,Mizanur Rahaman###
(115483, 115483)
 Although the power factor (PF) is veryhigh along the x<missing VAR>-axis (above 10 mW m<missing VAR>-1K-2 at 300 K), such large kl dramaticallyreduces ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 300, 'K', 1],[5.0, 10, 'mW', 0],[5.0, 300, 'K', 0],[85.0, 700, 'K', 1]

WC
###Effect of interface resistance on thermoelectric properties in (1-x)La$_{0.95}$Sr$_{0.05}$Co$_{0.95}$Mn$_{0.05}$O$_3$/(x)WC composite|Ashutosh Kumar,Krzysztof T. Wojciechowski###
(115653, 115654)
Effect of interface resistance on thermoelectric properties in (1-x)La0.95Sr0.05Co0.95Mn0.05O3/(x)WC composite.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 0.2, 'is', 7],[397.0, 463, 'K', 7]

In
###Effect of interface resistance on thermoelectric properties in (1-x)La$_{0.95}$Sr$_{0.05}$Co$_{0.95}$Mn$_{0.05}$O$_3$/(x)WC composite|Ashutosh Kumar,Krzysztof T. Wojciechowski###
(115659, 115659)
 In this study, the synergistic effect of the particle size of the dispersedphase and the interface thermal resistance (R<missing VAR>int) between the phases onthe phonon thermal conductivity (kappaph) of the(1-x)La0.95Sr0.05Co0.95Mn0.05O3/(x)WC thermoelectriccomposite, is demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 0.2, 'is', 6],[392.0, 463, 'K', 6]

WC
###Effect of interface resistance on thermoelectric properties in (1-x)La$_{0.95}$Sr$_{0.05}$Co$_{0.95}$Mn$_{0.05}$O$_3$/(x)WC composite|Ashutosh Kumar,Krzysztof T. Wojciechowski###
(115750, 115751)
 In this study, the synergistic effect of the particle size of the dispersedphase and the interface thermal resistance (R<missing VAR>int) between the phases onthe phonon thermal conductivity (kappaph) of the(1-x)La0.95Sr0.05Co0.95Mn0.05O3/(x)WC thermoelectriccomposite, is demonstrated.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 0.2, 'is', 6],[300.0, 463, 'K', 6]

In
###Effect of interface resistance on thermoelectric properties in (1-x)La$_{0.95}$Sr$_{0.05}$Co$_{0.95}$Mn$_{0.05}$O$_3$/(x)WC composite|Ashutosh Kumar,Krzysztof T. Wojciechowski###
(115803, 115803)
 Inparticular, the polycrystallineLa0.95Sr0.05Co0.95Mn0.05O3 sample is synthesized using astandard-solid state route.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 0.2, 'is', 4],[248.0, 463, 'K', 4]

La0.95Sr0.05Co0.95Mn0.05O3
###Effect of interface resistance on thermoelectric properties in (1-x)La$_{0.95}$Sr$_{0.05}$Co$_{0.95}$Mn$_{0.05}$O$_3$/(x)WC composite|Ashutosh Kumar,Krzysztof T. Wojciechowski###
(115814, 115823)
 Inparticular, the polycrystallineLa0.95Sr0.05Co0.95Mn0.05O3 sample is synthesized using astandard-solid state route.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.01,0,0.19,0,0,0,0,0,0,0,0,0,0,0.01,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 0.2, 'is', 4],[228.0, 463, 'K', 4]

WC
###Effect of interface resistance on thermoelectric properties in (1-x)La$_{0.95}$Sr$_{0.05}$Co$_{0.95}$Mn$_{0.05}$O$_3$/(x)WC composite|Ashutosh Kumar,Krzysztof T. Wojciechowski###
(115851, 115852)
 The presence of WC nanoparticle is confirmed fromthe electron microscopy images.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 0.2, 'is', 3],[199.0, 463, 'K', 3]

WC
###Effect of interface resistance on thermoelectric properties in (1-x)La$_{0.95}$Sr$_{0.05}$Co$_{0.95}$Mn$_{0.05}$O$_3$/(x)WC composite|Ashutosh Kumar,Krzysztof T. Wojciechowski###
(115909, 115910)
 Electrical conductivity (sigma) increases,and the Seebeck coefficient (alpha) decreases with the increase inconducting WC volume fraction in the composite.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.2, 'is', 2],[141.0, 463, 'K', 2]

WC
###Effect of interface resistance on thermoelectric properties in (1-x)La$_{0.95}$Sr$_{0.05}$Co$_{0.95}$Mn$_{0.05}$O$_3$/(x)WC composite|Ashutosh Kumar,Krzysztof T. Wojciechowski###
(115949, 115950)
 The simultaneous increase insigma and a decrease in kappaph with the WC volume fraction results inan increased figure of merit (zT) for(1-x)La0.95Sr0.05Co0.95Mn0.05O3/(x)WC composite.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.2, 'is', 1],[101.0, 463, 'K', 1]

WC
###Effect of interface resistance on thermoelectric properties in (1-x)La$_{0.95}$Sr$_{0.05}$Co$_{0.95}$Mn$_{0.05}$O$_3$/(x)WC composite|Ashutosh Kumar,Krzysztof T. Wojciechowski###
(115998, 115999)
 The simultaneous increase insigma and a decrease in kappaph with the WC volume fraction results inan increased figure of merit (zT) for(1-x)La0.95Sr0.05Co0.95Mn0.05O3/(x)WC composite.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.2, 'is', 1],[52.0, 463, 'K', 1]

WC
###Effect of interface resistance on thermoelectric properties in (1-x)La$_{0.95}$Sr$_{0.05}$Co$_{0.95}$Mn$_{0.05}$O$_3$/(x)WC composite|Ashutosh Kumar,Krzysztof T. Wojciechowski###
(116039, 116040)
 Amaximum zT sim 0.20 is obtained for(1-x)La0.95Sr0.05Co0.95Mn0.05O3/(x)WC composite forx<missing VAR>0.010 at 463 K.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.2, 'is', 0],[11.0, 463, 'K', 0]

PbTe
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116139, 116140)
Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n<missing VAR>-type PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 1.0, 'is', 9],[420.0, 400, 'and', 9],[421.0, 825, 'K', 9]

PbTe
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116206, 116207)
 To achieve this, weoptimize the carrier concentrations of n<missing VAR>-type PbTe from room up to hot-endtemperatures by co-doping Bi and Ag.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 1.0, 'is', 7],[353.0, 400, 'and', 7],[354.0, 825, 'K', 7]

Bi
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116230, 116230)
 To achieve this, weoptimize the carrier concentrations of n<missing VAR>-type PbTe from room up to hot-endtemperatures by co-doping Bi and Ag.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 1.0, 'is', 7],[330.0, 400, 'and', 7],[331.0, 825, 'K', 7]

Ag
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116234, 116234)
 To achieve this, weoptimize the carrier concentrations of n<missing VAR>-type PbTe from room up to hot-endtemperatures by co-doping Bi and Ag.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 1.0, 'is', 7],[326.0, 400, 'and', 7],[327.0, 825, 'K', 7]

Bi
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116237, 116237)
 Bi is an efficient n<missing VAR>-type dopant in PbTe,often leading to excessive carrier concentration at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 1.0, 'is', 6],[323.0, 400, 'and', 6],[324.0, 825, 'K', 6]

PbTe
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116253, 116254)
 Bi is an efficient n<missing VAR>-type dopant in PbTe,often leading to excessive carrier concentration at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 1.0, 'is', 6],[306.0, 400, 'and', 6],[307.0, 825, 'K', 6]

As
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116277, 116277)
 Asrevealed by density functional theory calculations, the formation of Bi and Agdefect complexes is exploited to optimize the room temperature carrierconcentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 1.0, 'is', 5],[283.0, 400, 'and', 5],[284.0, 825, 'K', 5]

Bi
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116299, 116299)
 Asrevealed by density functional theory calculations, the formation of Bi and Agdefect complexes is exploited to optimize the room temperature carrierconcentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 1.0, 'is', 5],[261.0, 400, 'and', 5],[262.0, 825, 'K', 5]

Ag
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116303, 116303)
 Asrevealed by density functional theory calculations, the formation of Bi and Agdefect complexes is exploited to optimize the room temperature carrierconcentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 1.0, 'is', 5],[257.0, 400, 'and', 5],[258.0, 825, 'K', 5]

At
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116330, 116330)
 At elevated temperatures, we demonstrate the dynamic dissolutionof Ag2Te precipitates in PbTe in situ by heating in a scanning transmissionelectron microscope.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 1.0, 'is', 4],[230.0, 400, 'and', 4],[231.0, 825, 'K', 4]

Ag2Te
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116350, 116352)
 At elevated temperatures, we demonstrate the dynamic dissolutionof Ag2Te precipitates in PbTe in situ by heating in a scanning transmissionelectron microscope.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 1.0, 'is', 4],[208.0, 400, 'and', 4],[209.0, 825, 'K', 4]

PbTe
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116358, 116359)
 At elevated temperatures, we demonstrate the dynamic dissolutionof Ag2Te precipitates in PbTe in situ by heating in a scanning transmissionelectron microscope.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 1.0, 'is', 4],[201.0, 400, 'and', 4],[202.0, 825, 'K', 4]

Ag
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116393, 116393)
 The release of n<missing VAR>-type Ag interstitials with increasingtemperature fulfills the requirement of higher carrier concentrations at thehot end.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 1.0, 'is', 3],[167.0, 400, 'and', 3],[168.0, 825, 'K', 3]

Ag
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116444, 116444)
 Moreover, as characterized by atom probe tomography, Ag atomsaggregate along parallel dislocation arrays to form Cottrell atmospheres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1.0, 'is', 2],[116.0, 400, 'and', 2],[117.0, 825, 'K', 2]

As
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116499, 116499)
 As a result of the synergy of dynamic doping and phononscattering at decorated dislocations, an average zT of 1.0 is achieved inn<missing VAR>-type Bi/Ag-codoped PbTe between 400 and 825 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1.0, 'is', 0],[61.0, 400, 'and', 0],[62.0, 825, 'K', 0]

Bi/Ag
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116550, 116552)
 As a result of the synergy of dynamic doping and phononscattering at decorated dislocations, an average zT of 1.0 is achieved inn<missing VAR>-type Bi/Ag-codoped PbTe between 400 and 825 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[11.0, 1.0, 'is', 0],[8.0, 400, 'and', 0],[9.0, 825, 'K', 0]

PbTe
###Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe|Yuan Yu,Chongjian Zhou,Xiangzhao Zhang,Lamya Abdellaoui,Christian Doberstein,Benjamin Berkels,Bangzhi Ge,Guanjun Qiao,Christina Scheu,Matthias Wuttig,Oana Cojocaru-Mirédin,Siyuan Zhang###
(116556, 116557)
 As a result of the synergy of dynamic doping and phononscattering at decorated dislocations, an average zT of 1.0 is achieved inn<missing VAR>-type Bi/Ag-codoped PbTe between 400 and 825 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1.0, 'is', 0],[3.0, 400, 'and', 0],[4.0, 825, 'K', 0]

Sr
###Thermoelectric properties of high-entropy rare-earth cobaltates|Ashutosh Kumar,Diana Dragoe,David Bérardan,Nita Dragoe###
(116709, 116709)
 High-entropy concept introduced with a promising paradigm to obtain exoticphysical properties has motivated us to explore the thermoelectric propertiesof Sr-substituted high-entropy rare-earth cobaltates i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 0.23, 'is', 6],[299.0, 350, 'K', 6]

(LaNdPrSmEu)1
###Thermoelectric properties of high-entropy rare-earth cobaltates|Ashutosh Kumar,Diana Dragoe,David Bérardan,Nita Dragoe###
(116730, 116737)
,(LaNdPrSmEu)1-xSrxCoO3 (0 leq x<missing VAR> leq 0.10).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.2,0.2,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 0.23, 'is', 5],[271.0, 350, 'K', 5]

CoO3
###Thermoelectric properties of high-entropy rare-earth cobaltates|Ashutosh Kumar,Diana Dragoe,David Bérardan,Nita Dragoe###
(116742, 116744)
,(LaNdPrSmEu)1-xSrxCoO3 (0 leq x<missing VAR> leq 0.10).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 0.23, 'is', 5],[264.0, 350, 'K', 5]

Sr
###Thermoelectric properties of high-entropy rare-earth cobaltates|Ashutosh Kumar,Diana Dragoe,David Bérardan,Nita Dragoe###
(116826, 116826)
 The Seebeck coefficient andelectrical resistivity decrease with rising Sr concentration as well as with anincrease in temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 0.23, 'is', 3],[182.0, 350, 'K', 3]

La0.95Sr0.05CoO3
###Thermoelectric properties of high-entropy rare-earth cobaltates|Ashutosh Kumar,Diana Dragoe,David Bérardan,Nita Dragoe###
(116892, 116898)
 The multiple A-site ions in high-entropy rare-earthcobaltates result in an improved Seebeck coefficient (alpha) compared toLa0.95Sr0.05CoO3, associated with a decrease in the Co-O-Co bondangle, which further enhances the power factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.01,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 0.23, 'is', 2],[110.0, 350, 'K', 2]

Co
###Thermoelectric properties of high-entropy rare-earth cobaltates|Ashutosh Kumar,Diana Dragoe,David Bérardan,Nita Dragoe###
(116913, 116913)
 The multiple A-site ions in high-entropy rare-earthcobaltates result in an improved Seebeck coefficient (alpha) compared toLa0.95Sr0.05CoO3, associated with a decrease in the Co-O-Co bondangle, which further enhances the power factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.23, 'is', 2],[95.0, 350, 'K', 2]

O
###Thermoelectric properties of high-entropy rare-earth cobaltates|Ashutosh Kumar,Diana Dragoe,David Bérardan,Nita Dragoe###
(116915, 116915)
 The multiple A-site ions in high-entropy rare-earthcobaltates result in an improved Seebeck coefficient (alpha) compared toLa0.95Sr0.05CoO3, associated with a decrease in the Co-O-Co bondangle, which further enhances the power factor.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 0.23, 'is', 2],[93.0, 350, 'K', 2]

Co
###Thermoelectric properties of high-entropy rare-earth cobaltates|Ashutosh Kumar,Diana Dragoe,David Bérardan,Nita Dragoe###
(116917, 116917)
 The multiple A-site ions in high-entropy rare-earthcobaltates result in an improved Seebeck coefficient (alpha) compared toLa0.95Sr0.05CoO3, associated with a decrease in the Co-O-Co bondangle, which further enhances the power factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0.23, 'is', 2],[91.0, 350, 'K', 2]

As
###Thermoelectric properties of high-entropy rare-earth cobaltates|Ashutosh Kumar,Diana Dragoe,David Bérardan,Nita Dragoe###
(116979, 116979)
 As a result, a maximum figure of merit (zT) of 0.23 isobtained at 350K for (LaNdPrSmEu)0.95Sr0.05CoO3, which is one ofthe highest values of zT reported at this temperature for oxide materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.23, 'is', 0],[29.0, 350, 'K', 0]

(LaNdPrSmEu)0.95Sr0.05CoO3
###Thermoelectric properties of high-entropy rare-earth cobaltates|Ashutosh Kumar,Diana Dragoe,David Bérardan,Nita Dragoe###
(117012, 117024)
 As a result, a maximum figure of merit (zT) of 0.23 isobtained at 350K for (LaNdPrSmEu)0.95Sr0.05CoO3, which is one ofthe highest values of zT reported at this temperature for oxide materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3409090909090909,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11363636363636363,0,0,0,0,0,0,0,0,0,0,0.005681818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10795454545454544,0,0.10795454545454544,0.10795454545454544,0,0.10795454545454544,0.10795454545454544,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.23, 'is', 0],[4.0, 350, 'K', 0]

S
###Tuning Phononic and Electronic Contributions of Thermoelectric in defected S-Shape Graphene Nanoribbons|M. Amir Bazrafshan,Farhad Khoeini###
(117123, 117123)
Tuning Phononic and Electronic Contributions of Thermoelectric in defected S-Shape Graphene Nanoribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[520.0, 2.5, 'times', 11]

In
###Tuning Phononic and Electronic Contributions of Thermoelectric in defected S-Shape Graphene Nanoribbons|M. Amir Bazrafshan,Farhad Khoeini###
(117203, 117203)
 In this work, we are interested in studying the transportproperties of S-shape graphene structures with the single vacancy (SV) anddouble vacancy (D<missing VAR>V) models.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[440.0, 2.5, 'times', 8]

S
###Tuning Phononic and Electronic Contributions of Thermoelectric in defected S-Shape Graphene Nanoribbons|M. Amir Bazrafshan,Farhad Khoeini###
(117229, 117229)
 In this work, we are interested in studying the transportproperties of S-shape graphene structures with the single vacancy (SV) anddouble vacancy (D<missing VAR>V) models.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[414.0, 2.5, 'times', 8]

(SV)
###Tuning Phononic and Electronic Contributions of Thermoelectric in defected S-Shape Graphene Nanoribbons|M. Amir Bazrafshan,Farhad Khoeini###
(117245, 117248)
 In this work, we are interested in studying the transportproperties of S-shape graphene structures with the single vacancy (SV) anddouble vacancy (D<missing VAR>V) models.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 2.5, 'times', 8]

V
###Tuning Phononic and Electronic Contributions of Thermoelectric in defected S-Shape Graphene Nanoribbons|M. Amir Bazrafshan,Farhad Khoeini###
(117259, 117259)
 In this work, we are interested in studying the transportproperties of S-shape graphene structures with the single vacancy (SV) anddouble vacancy (D<missing VAR>V) models.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[384.0, 2.5, 'times', 8]

In
###Tuning Phononic and Electronic Contributions of Thermoelectric in defected S-Shape Graphene Nanoribbons|M. Amir Bazrafshan,Farhad Khoeini###
(117616, 117616)
 In the large devices, the SVs can increasethe ZT up to 2.5 times.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 2.5, 'times', 0]

S
###Tuning Phononic and Electronic Contributions of Thermoelectric in defected S-Shape Graphene Nanoribbons|M. Amir Bazrafshan,Farhad Khoeini###
(117627, 117627)
 In the large devices, the SVs can increasethe ZT up to 2.5 times.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2.5, 'times', 0]

Ge1.01Te
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117680, 117682)
Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge1.01Te Experimental investigation and theoretical insight.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5024875621890548,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.49751243781094534,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 3.5, 'W', 6],[401.0, 1.06, 'W', 8],[413.0, 300, ',', 10],[588.0, 1.75, 'at', 12],[590.0, 773, ',', 12],[608.0, 1.03, 'for', 12],[630.0, -773, ',', 12]

GeTe
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117718, 117719)
 This study shows a method of enhancing the thermoelectric properties ofGeTe-based materials by Ti and Bi co-doping on cation sites along withself-doping with Ge via simultaneous optimization of electronic (via crystalfield engineering, and precise Fermi level optimization) and thermal (viapoint-defect scattering) transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 3.5, 'W', 5],[364.0, 1.06, 'W', 7],[376.0, 300, ',', 9],[551.0, 1.75, 'at', 11],[553.0, 773, ',', 11],[571.0, 1.03, 'for', 11],[593.0, -773, ',', 11]

Ti
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117727, 117727)
 This study shows a method of enhancing the thermoelectric properties ofGeTe-based materials by Ti and Bi co-doping on cation sites along withself-doping with Ge via simultaneous optimization of electronic (via crystalfield engineering, and precise Fermi level optimization) and thermal (viapoint-defect scattering) transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 3.5, 'W', 5],[356.0, 1.06, 'W', 7],[368.0, 300, ',', 9],[543.0, 1.75, 'at', 11],[545.0, 773, ',', 11],[563.0, 1.03, 'for', 11],[585.0, -773, ',', 11]

Bi
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117731, 117731)
 This study shows a method of enhancing the thermoelectric properties ofGeTe-based materials by Ti and Bi co-doping on cation sites along withself-doping with Ge via simultaneous optimization of electronic (via crystalfield engineering, and precise Fermi level optimization) and thermal (viapoint-defect scattering) transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 3.5, 'W', 5],[352.0, 1.06, 'W', 7],[364.0, 300, ',', 9],[539.0, 1.75, 'at', 11],[541.0, 773, ',', 11],[559.0, 1.03, 'for', 11],[581.0, -773, ',', 11]

Ge
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117754, 117754)
 This study shows a method of enhancing the thermoelectric properties ofGeTe-based materials by Ti and Bi co-doping on cation sites along withself-doping with Ge via simultaneous optimization of electronic (via crystalfield engineering, and precise Fermi level optimization) and thermal (viapoint-defect scattering) transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 3.5, 'W', 5],[329.0, 1.06, 'W', 7],[341.0, 300, ',', 9],[516.0, 1.75, 'at', 11],[518.0, 773, ',', 11],[536.0, 1.03, 'for', 11],[558.0, -773, ',', 11]

GeTe
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117812, 117813)
 The pristine GeTe possesses highcarrier concentration (n) due to intrinsic Ge vacancies, low Seebeckcoefficient (alpha), and high thermal conductivity (kappa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 3.5, 'W', 4],[270.0, 1.06, 'W', 6],[282.0, 300, ',', 8],[457.0, 1.75, 'at', 10],[459.0, 773, ',', 10],[477.0, 1.03, 'for', 10],[499.0, -773, ',', 10]

Ge
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117834, 117834)
 The pristine GeTe possesses highcarrier concentration (n) due to intrinsic Ge vacancies, low Seebeckcoefficient (alpha), and high thermal conductivity (kappa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 3.5, 'W', 4],[249.0, 1.06, 'W', 6],[261.0, 300, ',', 8],[436.0, 1.75, 'at', 10],[438.0, 773, ',', 10],[456.0, 1.03, 'for', 10],[478.0, -773, ',', 10]

Ge
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117866, 117866)
 The Gevacancy optimization and crystal field engineering results in an enhancedalpha via excess Ge and Ti doping, which is further improved by bandstructure engineering through Bi doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 3.5, 'W', 3],[217.0, 1.06, 'W', 5],[229.0, 300, ',', 7],[404.0, 1.75, 'at', 9],[406.0, 773, ',', 9],[424.0, 1.03, 'for', 9],[446.0, -773, ',', 9]

Ge
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117896, 117896)
 The Gevacancy optimization and crystal field engineering results in an enhancedalpha via excess Ge and Ti doping, which is further improved by bandstructure engineering through Bi doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 3.5, 'W', 3],[187.0, 1.06, 'W', 5],[199.0, 300, ',', 7],[374.0, 1.75, 'at', 9],[376.0, 773, ',', 9],[394.0, 1.03, 'for', 9],[416.0, -773, ',', 9]

Ti
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117900, 117900)
 The Gevacancy optimization and crystal field engineering results in an enhancedalpha via excess Ge and Ti doping, which is further improved by bandstructure engineering through Bi doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 3.5, 'W', 3],[183.0, 1.06, 'W', 5],[195.0, 300, ',', 7],[370.0, 1.75, 'at', 9],[372.0, 773, ',', 9],[390.0, 1.03, 'for', 9],[412.0, -773, ',', 9]

Bi
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117924, 117924)
 The Gevacancy optimization and crystal field engineering results in an enhancedalpha via excess Ge and Ti doping, which is further improved by bandstructure engineering through Bi doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 3.5, 'W', 3],[159.0, 1.06, 'W', 5],[171.0, 300, ',', 7],[346.0, 1.75, 'at', 9],[348.0, 773, ',', 9],[366.0, 1.03, 'for', 9],[388.0, -773, ',', 9]

As
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117929, 117929)
 As a result of improved alpha andoptimized Fermi level (carrier concentration), an enhanced power factor(alpha2sigma) is obtained for Ti--Bi co-doped Ge1.01Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 3.5, 'W', 2],[154.0, 1.06, 'W', 4],[166.0, 300, ',', 6],[341.0, 1.75, 'at', 8],[343.0, 773, ',', 8],[361.0, 1.03, 'for', 8],[383.0, -773, ',', 8]

Ti
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117978, 117978)
 As a result of improved alpha andoptimized Fermi level (carrier concentration), an enhanced power factor(alpha2sigma) is obtained for Ti--Bi co-doped Ge1.01Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 3.5, 'W', 2],[105.0, 1.06, 'W', 4],[117.0, 300, ',', 6],[292.0, 1.75, 'at', 8],[294.0, 773, ',', 8],[312.0, 1.03, 'for', 8],[334.0, -773, ',', 8]

Bi
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117981, 117981)
 As a result of improved alpha andoptimized Fermi level (carrier concentration), an enhanced power factor(alpha2sigma) is obtained for Ti--Bi co-doped Ge1.01Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 3.5, 'W', 2],[102.0, 1.06, 'W', 4],[114.0, 300, ',', 6],[289.0, 1.75, 'at', 8],[291.0, 773, ',', 8],[309.0, 1.03, 'for', 8],[331.0, -773, ',', 8]

Ge1.01Te
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(117987, 117989)
 As a result of improved alpha andoptimized Fermi level (carrier concentration), an enhanced power factor(alpha2sigma) is obtained for Ti--Bi co-doped Ge1.01Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5024875621890548,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.49751243781094534,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 3.5, 'W', 2],[94.0, 1.06, 'W', 4],[106.0, 300, ',', 6],[281.0, 1.75, 'at', 8],[283.0, 773, ',', 8],[301.0, 1.03, 'for', 8],[323.0, -773, ',', 8]

K
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118075, 118075)
K-1 tosim 1.06 W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3.5, 'W', 2],[8.0, 1.06, 'W', 0],[20.0, 300, ',', 2],[195.0, 1.75, 'at', 4],[197.0, 773, ',', 4],[215.0, 1.03, 'for', 4],[237.0, -773, ',', 4]

K
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118089, 118089)
K-1 at 300,K for Ti--Bi co-doping in GeTe,attributed to point-defect scattering due to mass and strain field fluctuation,in line with the Debye-Callaway model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3.5, 'W', 4],[6.0, 1.06, 'W', 2],[6.0, 300, ',', 0],[181.0, 1.75, 'at', 2],[183.0, 773, ',', 2],[201.0, 1.03, 'for', 2],[223.0, -773, ',', 2]

K
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118097, 118097)
K-1 at 300,K for Ti--Bi co-doping in GeTe,attributed to point-defect scattering due to mass and strain field fluctuation,in line with the Debye-Callaway model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 3.5, 'W', 4],[14.0, 1.06, 'W', 2],[2.0, 300, ',', 0],[173.0, 1.75, 'at', 2],[175.0, 773, ',', 2],[193.0, 1.03, 'for', 2],[215.0, -773, ',', 2]

Ti
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118101, 118101)
K-1 at 300,K for Ti--Bi co-doping in GeTe,attributed to point-defect scattering due to mass and strain field fluctuation,in line with the Debye-Callaway model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 3.5, 'W', 4],[18.0, 1.06, 'W', 2],[6.0, 300, ',', 0],[169.0, 1.75, 'at', 2],[171.0, 773, ',', 2],[189.0, 1.03, 'for', 2],[211.0, -773, ',', 2]

Bi
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118104, 118104)
K-1 at 300,K for Ti--Bi co-doping in GeTe,attributed to point-defect scattering due to mass and strain field fluctuation,in line with the Debye-Callaway model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 3.5, 'W', 4],[21.0, 1.06, 'W', 2],[9.0, 300, ',', 0],[166.0, 1.75, 'at', 2],[168.0, 773, ',', 2],[186.0, 1.03, 'for', 2],[208.0, -773, ',', 2]

GeTe
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118112, 118113)
K-1 at 300,K for Ti--Bi co-doping in GeTe,attributed to point-defect scattering due to mass and strain field fluctuation,in line with the Debye-Callaway model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 3.5, 'W', 4],[29.0, 1.06, 'W', 2],[17.0, 300, ',', 0],[157.0, 1.75, 'at', 2],[159.0, 773, ',', 2],[177.0, 1.03, 'for', 2],[199.0, -773, ',', 2]

Ti
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118179, 118179)
 The phonon dispersion calculations showa decreasing group velocity in Ti--Bi co-doped GeTe, supporting the obtainedreduced kappaph.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 3.5, 'W', 5],[96.0, 1.06, 'W', 3],[84.0, 300, ',', 1],[91.0, 1.75, 'at', 1],[93.0, 773, ',', 1],[111.0, 1.03, 'for', 1],[133.0, -773, ',', 1]

Bi
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118182, 118182)
 The phonon dispersion calculations showa decreasing group velocity in Ti--Bi co-doped GeTe, supporting the obtainedreduced kappaph.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 3.5, 'W', 5],[99.0, 1.06, 'W', 3],[87.0, 300, ',', 1],[88.0, 1.75, 'at', 1],[90.0, 773, ',', 1],[108.0, 1.03, 'for', 1],[130.0, -773, ',', 1]

GeTe
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118188, 118189)
 The phonon dispersion calculations showa decreasing group velocity in Ti--Bi co-doped GeTe, supporting the obtainedreduced kappaph.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 3.5, 'W', 5],[105.0, 1.06, 'W', 3],[93.0, 300, ',', 1],[81.0, 1.75, 'at', 1],[83.0, 773, ',', 1],[101.0, 1.03, 'for', 1],[123.0, -773, ',', 1]

K
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118274, 118274)
 The strategies used in the present study cansignificantly increase the effective mass, optimize the carrier concentration,and decrease phonon thermal conductivity while achieving an impressive maximumzT value of 1.75 at 773,K and average zT (zTav) of 1.03 forGe0.91Ti0.02Bi0.08Te over a temperature range of 300-773,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 3.5, 'W', 6],[191.0, 1.06, 'W', 4],[179.0, 300, ',', 2],[4.0, 1.75, 'at', 0],[2.0, 773, ',', 0],[16.0, 1.03, 'for', 0],[38.0, -773, ',', 0]

Ge0.91Ti0.02Bi0.08Te
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118293, 118299)
 The strategies used in the present study cansignificantly increase the effective mass, optimize the carrier concentration,and decrease phonon thermal conductivity while achieving an impressive maximumzT value of 1.75 at 773,K and average zT (zTav) of 1.03 forGe0.91Ti0.02Bi0.08Te over a temperature range of 300-773,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.009950248756218907,0,0,0,0,0,0,0,0,0,0.45273631840796025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.49751243781094534,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03980099502487563,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3.5, 'W', 6],[210.0, 1.06, 'W', 4],[198.0, 300, ',', 2],[23.0, 1.75, 'at', 0],[21.0, 773, ',', 0],[3.0, 1.03, 'for', 0],[13.0, -773, ',', 0]

K
###Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight|Ashutosh Kumar,Preeti Bhumla,D. Sivaprahasam,Saswata Bhattacharya,Nita Dragoe###
(118315, 118315)
 The strategies used in the present study cansignificantly increase the effective mass, optimize the carrier concentration,and decrease phonon thermal conductivity while achieving an impressive maximumzT value of 1.75 at 773,K and average zT (zTav) of 1.03 forGe0.91Ti0.02Bi0.08Te over a temperature range of 300-773,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 3.5, 'W', 6],[232.0, 1.06, 'W', 4],[220.0, 300, ',', 2],[45.0, 1.75, 'at', 0],[43.0, 773, ',', 0],[25.0, 1.03, 'for', 0],[3.0, -773, ',', 0]

Fe2Sc
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118352, 118354)
Two functionals approach in DFT for the prediction of thermoelectric properties of Fe2ScX<missing VAR> (X<missing VAR>  P, As, Sb) full Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0.81, 'eV', 3],[177.0, 0.6, 'eV', 3],[410.0, 300, 'K', 9],[444.0, 18.2, ',', 10],[446.0, 13.6, 'and', 10],[455.0, -1, ',', 10],[555.0, -0.43, ',', 12],[567.0, -0.52, ',', 12],[596.0, -0.34, ',', 13],[608.0, -0.26, ',', 13]

P
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118361, 118361)
Two functionals approach in DFT for the prediction of thermoelectric properties of Fe2ScX<missing VAR> (X<missing VAR>  P, As, Sb) full Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.81, 'eV', 3],[170.0, 0.6, 'eV', 3],[403.0, 300, 'K', 9],[437.0, 18.2, ',', 10],[439.0, 13.6, 'and', 10],[448.0, -1, ',', 10],[548.0, -0.43, ',', 12],[560.0, -0.52, ',', 12],[589.0, -0.34, ',', 13],[601.0, -0.26, ',', 13]

As
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118364, 118364)
Two functionals approach in DFT for the prediction of thermoelectric properties of Fe2ScX<missing VAR> (X<missing VAR>  P, As, Sb) full Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 0.81, 'eV', 3],[167.0, 0.6, 'eV', 3],[400.0, 300, 'K', 9],[434.0, 18.2, ',', 10],[436.0, 13.6, 'and', 10],[445.0, -1, ',', 10],[545.0, -0.43, ',', 12],[557.0, -0.52, ',', 12],[586.0, -0.34, ',', 13],[598.0, -0.26, ',', 13]

Sb
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118367, 118367)
Two functionals approach in DFT for the prediction of thermoelectric properties of Fe2ScX<missing VAR> (X<missing VAR>  P, As, Sb) full Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.81, 'eV', 3],[164.0, 0.6, 'eV', 3],[397.0, 300, 'K', 9],[431.0, 18.2, ',', 10],[433.0, 13.6, 'and', 10],[442.0, -1, ',', 10],[542.0, -0.43, ',', 12],[554.0, -0.52, ',', 12],[583.0, -0.34, ',', 13],[595.0, -0.26, ',', 13]

In
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118377, 118377)
 In the quest of new thermoelectric (TE) materials with high power factors,full-Heusler compounds having flat band are found to be promising candidates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0.81, 'eV', 2],[154.0, 0.6, 'eV', 2],[387.0, 300, 'K', 8],[421.0, 18.2, ',', 9],[423.0, 13.6, 'and', 9],[432.0, -1, ',', 9],[532.0, -0.43, ',', 11],[544.0, -0.52, ',', 11],[573.0, -0.34, ',', 12],[585.0, -0.26, ',', 12]

In
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118432, 118432)
In this direction, Fe2ScX<missing VAR> (X<missing VAR>P,As,Sb) compounds are investigated using mBJfor the band gap and SCAN to describe the electronic bands and phononproperties for TE applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.81, 'eV', 1],[99.0, 0.6, 'eV', 1],[332.0, 300, 'K', 7],[366.0, 18.2, ',', 8],[368.0, 13.6, 'and', 8],[377.0, -1, ',', 8],[477.0, -0.43, ',', 10],[489.0, -0.52, ',', 10],[518.0, -0.34, ',', 11],[530.0, -0.26, ',', 11]

Fe2Sc
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118439, 118441)
In this direction, Fe2ScX<missing VAR> (X<missing VAR>P,As,Sb) compounds are investigated using mBJfor the band gap and SCAN to describe the electronic bands and phononproperties for TE applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.81, 'eV', 1],[90.0, 0.6, 'eV', 1],[323.0, 300, 'K', 7],[357.0, 18.2, ',', 8],[359.0, 13.6, 'and', 8],[368.0, -1, ',', 8],[468.0, -0.43, ',', 10],[480.0, -0.52, ',', 10],[509.0, -0.34, ',', 11],[521.0, -0.26, ',', 11]

P
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118446, 118446)
In this direction, Fe2ScX<missing VAR> (X<missing VAR>P,As,Sb) compounds are investigated using mBJfor the band gap and SCAN to describe the electronic bands and phononproperties for TE applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0.81, 'eV', 1],[85.0, 0.6, 'eV', 1],[318.0, 300, 'K', 7],[352.0, 18.2, ',', 8],[354.0, 13.6, 'and', 8],[363.0, -1, ',', 8],[463.0, -0.43, ',', 10],[475.0, -0.52, ',', 10],[504.0, -0.34, ',', 11],[516.0, -0.26, ',', 11]

As
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118448, 118448)
In this direction, Fe2ScX<missing VAR> (X<missing VAR>P,As,Sb) compounds are investigated using mBJfor the band gap and SCAN to describe the electronic bands and phononproperties for TE applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0.81, 'eV', 1],[83.0, 0.6, 'eV', 1],[316.0, 300, 'K', 7],[350.0, 18.2, ',', 8],[352.0, 13.6, 'and', 8],[361.0, -1, ',', 8],[461.0, -0.43, ',', 10],[473.0, -0.52, ',', 10],[502.0, -0.34, ',', 11],[514.0, -0.26, ',', 11]

Sb
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118450, 118450)
In this direction, Fe2ScX<missing VAR> (X<missing VAR>P,As,Sb) compounds are investigated using mBJfor the band gap and SCAN to describe the electronic bands and phononproperties for TE applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.81, 'eV', 1],[81.0, 0.6, 'eV', 1],[314.0, 300, 'K', 7],[348.0, 18.2, ',', 8],[350.0, 13.6, 'and', 8],[359.0, -1, ',', 8],[459.0, -0.43, ',', 10],[471.0, -0.52, ',', 10],[500.0, -0.34, ',', 11],[512.0, -0.26, ',', 11]

SC
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118476, 118477)
In this direction, Fe2ScX<missing VAR> (X<missing VAR>P,As,Sb) compounds are investigated using mBJfor the band gap and SCAN to describe the electronic bands and phononproperties for TE applications.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0.81, 'eV', 1],[54.0, 0.6, 'eV', 1],[287.0, 300, 'K', 7],[321.0, 18.2, ',', 8],[323.0, 13.6, 'and', 8],[332.0, -1, ',', 8],[432.0, -0.43, ',', 10],[444.0, -0.52, ',', 10],[473.0, -0.34, ',', 11],[485.0, -0.26, ',', 11]

N
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118479, 118479)
In this direction, Fe2ScX<missing VAR> (X<missing VAR>P,As,Sb) compounds are investigated using mBJfor the band gap and SCAN to describe the electronic bands and phononproperties for TE applications.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.81, 'eV', 1],[52.0, 0.6, 'eV', 1],[285.0, 300, 'K', 7],[319.0, 18.2, ',', 8],[321.0, 13.6, 'and', 8],[330.0, -1, ',', 8],[430.0, -0.43, ',', 10],[442.0, -0.52, ',', 10],[471.0, -0.34, ',', 11],[483.0, -0.26, ',', 11]

V
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118528, 118528)
 The band gaps obtained from mBJ are 0.81 eV,0.69 e<missing VAR>V and 0.60 eV for Fe2ScX<missing VAR> compounds, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.81, 'eV', 0],[3.0, 0.6, 'eV', 0],[236.0, 300, 'K', 6],[270.0, 18.2, ',', 7],[272.0, 13.6, 'and', 7],[281.0, -1, ',', 7],[381.0, -0.43, ',', 9],[393.0, -0.52, ',', 9],[422.0, -0.34, ',', 10],[434.0, -0.26, ',', 10]

Fe2Sc
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118535, 118537)
 The band gaps obtained from mBJ are 0.81 eV,0.69 e<missing VAR>V and 0.60 eV for Fe2ScX<missing VAR> compounds, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.81, 'eV', 0],[4.0, 0.6, 'eV', 0],[227.0, 300, 'K', 6],[261.0, 18.2, ',', 7],[263.0, 13.6, 'and', 7],[272.0, -1, ',', 7],[372.0, -0.43, ',', 9],[384.0, -0.52, ',', 9],[413.0, -0.34, ',', 10],[425.0, -0.26, ',', 10]

S
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118565, 118565)
 The phonondispersion, phonon density of states (D<missing VAR>OS) and partial D<missing VAR>OS are calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0.81, 'eV', 1],[34.0, 0.6, 'eV', 1],[199.0, 300, 'K', 5],[233.0, 18.2, ',', 6],[235.0, 13.6, 'and', 6],[244.0, -1, ',', 6],[344.0, -0.43, ',', 8],[356.0, -0.52, ',', 8],[385.0, -0.34, ',', 9],[397.0, -0.26, ',', 9]

OS
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118573, 118574)
 The phonondispersion, phonon density of states (D<missing VAR>OS) and partial D<missing VAR>OS are calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0.81, 'eV', 1],[42.0, 0.6, 'eV', 1],[190.0, 300, 'K', 5],[224.0, 18.2, ',', 6],[226.0, 13.6, 'and', 6],[235.0, -1, ',', 6],[335.0, -0.43, ',', 8],[347.0, -0.52, ',', 8],[376.0, -0.34, ',', 9],[388.0, -0.26, ',', 9]

SC
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118635, 118636)
 The electronic band structutre calculated frommBJ and SCAN functionals are qualitatively compared.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 0.81, 'eV', 3],[104.0, 0.6, 'eV', 3],[128.0, 300, 'K', 3],[162.0, 18.2, ',', 4],[164.0, 13.6, 'and', 4],[173.0, -1, ',', 4],[273.0, -0.43, ',', 6],[285.0, -0.52, ',', 6],[314.0, -0.34, ',', 7],[326.0, -0.26, ',', 7]

N
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118638, 118638)
 The electronic band structutre calculated frommBJ and SCAN functionals are qualitatively compared.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.81, 'eV', 3],[107.0, 0.6, 'eV', 3],[126.0, 300, 'K', 3],[160.0, 18.2, ',', 4],[162.0, 13.6, 'and', 4],[171.0, -1, ',', 4],[271.0, -0.43, ',', 6],[283.0, -0.52, ',', 6],[312.0, -0.34, ',', 7],[324.0, -0.26, ',', 7]

K
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118808, 118808)
 Theobtained values of kappaph with constant tauph are 18.2, 13.6 and10.3 Wm-1K-1, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 0.81, 'eV', 7],[277.0, 0.6, 'eV', 7],[44.0, 300, 'K', 1],[10.0, 18.2, ',', 0],[8.0, 13.6, 'and', 0],[1.0, -1, ',', 0],[101.0, -0.43, ',', 2],[113.0, -0.52, ',', 2],[142.0, -0.34, ',', 3],[154.0, -0.26, ',', 3]

Fe2Sc
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118891, 118893)
 The ZTvalues for n<missing VAR>-type Fe2ScX<missing VAR>, in 900-1200 K, are 0.34-0.43, 0.40-0.48 and0.45-0.52, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 0.81, 'eV', 9],[360.0, 0.6, 'eV', 9],[127.0, 300, 'K', 3],[93.0, 18.2, ',', 2],[91.0, 13.6, 'and', 2],[82.0, -1, ',', 2],[16.0, -0.43, ',', 0],[28.0, -0.52, ',', 0],[57.0, -0.34, ',', 1],[69.0, -0.26, ',', 1]

K
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118903, 118903)
 The ZTvalues for n<missing VAR>-type Fe2ScX<missing VAR>, in 900-1200 K, are 0.34-0.43, 0.40-0.48 and0.45-0.52, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 0.81, 'eV', 9],[372.0, 0.6, 'eV', 9],[139.0, 300, 'K', 3],[105.0, 18.2, ',', 2],[103.0, 13.6, 'and', 2],[94.0, -1, ',', 2],[6.0, -0.43, ',', 0],[18.0, -0.52, ',', 0],[47.0, -0.34, ',', 1],[59.0, -0.26, ',', 1]

Fe2Sc
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118937, 118939)
 While, the p<missing VAR>-type Fe2ScX<missing VAR> have ZT of 0.25-0.34,0.20-0.28 and 0.18-0.26, respectively in the same temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 0.81, 'eV', 10],[406.0, 0.6, 'eV', 10],[173.0, 300, 'K', 4],[139.0, 18.2, ',', 3],[137.0, 13.6, 'and', 3],[128.0, -1, ',', 3],[28.0, -0.43, ',', 1],[16.0, -0.52, ',', 1],[11.0, -0.34, ',', 0],[23.0, -0.26, ',', 0]

Fe2Sc
###Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds|Shivprasad S. Shastri,Sudhir K. Pandey###
(118992, 118994)
 The ZTvalues suggest that, Fe2ScX<missing VAR> compounds can be promising materials in hightemperature power generation application on successful synthesis and furtherkappaph reduction by methods like nanostructuring.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[471.0, 0.81, 'eV', 11],[461.0, 0.6, 'eV', 11],[228.0, 300, 'K', 5],[194.0, 18.2, ',', 4],[192.0, 13.6, 'and', 4],[183.0, -1, ',', 4],[83.0, -0.43, ',', 2],[71.0, -0.52, ',', 2],[42.0, -0.34, ',', 1],[30.0, -0.26, ',', 1]

Si
###Numerical study of the thermoelectric power factor in ultra-thin Si nanowires|Neophytos Neophytou,Hans Kosina###
(119073, 119073)
Numerical study of the thermoelectric power factor in ultra-thin Si nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 1, 'D', 5],[410.0, 10, 'nm', 8]

In
###Numerical study of the thermoelectric power factor in ultra-thin Si nanowires|Neophytos Neophytou,Hans Kosina###
(119214, 119214)
 In this work, we couple theballistic (Landauer) and diffusive linearized Boltzmann electron transporttheory to the atomistic sp3d5s-spin-orbit-coupled tight-binding (T<missing VAR>B)electronic structure model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 1, 'D', 1],[269.0, 10, 'nm', 4]

B
###Numerical study of the thermoelectric power factor in ultra-thin Si nanowires|Neophytos Neophytou,Hans Kosina###
(119273, 119273)
 In this work, we couple theballistic (Landauer) and diffusive linearized Boltzmann electron transporttheory to the atomistic sp3d5s-spin-orbit-coupled tight-binding (T<missing VAR>B)electronic structure model.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 1, 'D', 1],[210.0, 10, 'nm', 4]

Si
###Numerical study of the thermoelectric power factor in ultra-thin Si nanowires|Neophytos Neophytou,Hans Kosina###
(119316, 119316)
 We calculate the room temperature electricalconductivity, Seebeck coefficient, and power factor of narrow 1D Si nanowires(NWs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1, 'D', 0],[167.0, 10, 'nm', 3]

N
###Numerical study of the thermoelectric power factor in ultra-thin Si nanowires|Neophytos Neophytou,Hans Kosina###
(119322, 119322)
 We calculate the room temperature electricalconductivity, Seebeck coefficient, and power factor of narrow 1D Si nanowires(NWs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1, 'D', 0],[161.0, 10, 'nm', 3]

B
###Numerical study of the thermoelectric power factor in ultra-thin Si nanowires|Neophytos Neophytou,Hans Kosina###
(119342, 119342)
 We describe the numerical formulation of coupling T<missing VAR>B to those transportformalisms, the approximations involved, and explain the differences in theconclusions obtained from each model.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 1, 'D', 1],[141.0, 10, 'nm', 2]

Si
###Numerical study of the thermoelectric power factor in ultra-thin Si nanowires|Neophytos Neophytou,Hans Kosina###
(119554, 119554)
 We find that the effect of low dimensionality on thethermoelectric power factor of Si NWs can be observed at diameters below 7nm,and that quantum confinement and different transport orientations offer thepossibility for power factor optimization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 1, 'D', 4],[71.0, 10, 'nm', 1]

N
###Numerical study of the thermoelectric power factor in ultra-thin Si nanowires|Neophytos Neophytou,Hans Kosina###
(119556, 119556)
 We find that the effect of low dimensionality on thethermoelectric power factor of Si NWs can be observed at diameters below 7nm,and that quantum confinement and different transport orientations offer thepossibility for power factor optimization.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 1, 'D', 4],[73.0, 10, 'nm', 1]

La3
###Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles|Romain Viennois,Kinga Niedziolka,Philippe Jund###
(119632, 119633)
Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X<missing VAR>S,Se,Te) from first-principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles|Romain Viennois,Kinga Niedziolka,Philippe Jund###
(119641, 119641)
Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X<missing VAR>S,Se,Te) from first-principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles|Romain Viennois,Kinga Niedziolka,Philippe Jund###
(119643, 119643)
Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X<missing VAR>S,Se,Te) from first-principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles|Romain Viennois,Kinga Niedziolka,Philippe Jund###
(119645, 119645)
Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X<missing VAR>S,Se,Te) from first-principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La3
###Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles|Romain Viennois,Kinga Niedziolka,Philippe Jund###
(119690, 119691)
 We report ab-initio calculations of the stability, lattice dynamics,electronic and thermoelectric properties of cubic La3-yX4 (X<missing VAR>S,Se,Te) materialsin view of analyzing their potential for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles|Romain Viennois,Kinga Niedziolka,Philippe Jund###
(119699, 119699)
 We report ab-initio calculations of the stability, lattice dynamics,electronic and thermoelectric properties of cubic La3-yX4 (X<missing VAR>S,Se,Te) materialsin view of analyzing their potential for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles|Romain Viennois,Kinga Niedziolka,Philippe Jund###
(119701, 119701)
 We report ab-initio calculations of the stability, lattice dynamics,electronic and thermoelectric properties of cubic La3-yX4 (X<missing VAR>S,Se,Te) materialsin view of analyzing their potential for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles|Romain Viennois,Kinga Niedziolka,Philippe Jund###
(119703, 119703)
 We report ab-initio calculations of the stability, lattice dynamics,electronic and thermoelectric properties of cubic La3-yX4 (X<missing VAR>S,Se,Te) materialsin view of analyzing their potential for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles|Romain Viennois,Kinga Niedziolka,Philippe Jund###
(119874, 119874)
 We believe thatthis is due to Umklapp scattering of the acoustical modes, notably by the lowenergy optical modes at about 7-8 meV found in all three chalcogenides, as incage compounds such as skutterudites or clathrates, even though there are nocages in the cubic Th3P4 structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Th3P4
###Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles|Romain Viennois,Kinga Niedziolka,Philippe Jund###
(119926, 119929)
 We believe thatthis is due to Umklapp scattering of the acoustical modes, notably by the lowenergy optical modes at about 7-8 meV found in all three chalcogenides, as incage compounds such as skutterudites or clathrates, even though there are nocages in the cubic Th3P4 structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La3
###Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles|Romain Viennois,Kinga Niedziolka,Philippe Jund###
(120218, 120219)
 Thusour results indicate the possibility to make high temperature performingthermo-generators based only on La3X<missing VAR>4 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd2Se3
###Pd$_{2}$Se$_{3}$ Monolayer: A Promising Two Dimensional Thermoelectric Material with Ultralow Lattice Thermal Conductivity and High Power Factor|S. Shahab Naghavi,Jiangang He,Yi Xia,C. Wolverton###
(120234, 120237)
Pd2Se3 Monolayer A Promising Two Dimensional Thermoelectric Material with Ultralow Lattice Thermal Conductivity and High Power Factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 300, ',', 4]

Pd2Se3
###Pd$_{2}$Se$_{3}$ Monolayer: A Promising Two Dimensional Thermoelectric Material with Ultralow Lattice Thermal Conductivity and High Power Factor|S. Shahab Naghavi,Jiangang He,Yi Xia,C. Wolverton###
(120386, 120389)
 Ourfirst-principles calculations show that these two ingredients are wellfulfilled in the recently synthesized Pd2Se3 monolayer, whose crystalstructure is composed of [Se2]2- dimers, Se2- anions, andPd2+ cations coordinated in a square planar manner.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 300, ',', 1]

Bi
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(120745, 120745)
Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 10, 'nm', 1],[239.0, 360, 'K', 4]

Sb
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(120747, 120747)
Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 10, 'nm', 1],[237.0, 360, 'K', 4]

Te
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(120749, 120749)
Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 10, 'nm', 1],[235.0, 360, 'K', 4]

Bi
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(120764, 120764)
 A nanopowder from p<missing VAR>-Bi-Sb-Te with particles  10 nm were fabricated by theball milling using different technological modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 10, 'nm', 0],[220.0, 360, 'K', 3]

Sb
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(120766, 120766)
 A nanopowder from p<missing VAR>-Bi-Sb-Te with particles  10 nm were fabricated by theball milling using different technological modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 10, 'nm', 0],[218.0, 360, 'K', 3]

Te
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(120768, 120768)
 A nanopowder from p<missing VAR>-Bi-Sb-Te with particles  10 nm were fabricated by theball milling using different technological modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 10, 'nm', 0],[216.0, 360, 'K', 3]

SPS
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(120817, 120819)
 Cold and hot pressing atdifferent conditions and also SPS process were used for consolidation of thepowder into a bulk nanostructure and nanocomposites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 10, 'nm', 1],[165.0, 360, 'K', 2]

MoS2
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(120944, 120946)
 The main factors allowingslowing-down of the growth of nanograins as a result of recrystallization arethe reduction of the temperature and of the duration of the pressing, theincrease of the pressure, as well as addition of small value additives (likeMoS2, thermally expanded graphite or fullerenes).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 10, 'nm', 2],[38.0, 360, 'K', 1]

Bi0
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(120996, 120997)
 It was reached thethermoelectric figure of merit ZT1.22 (at 360 K) in the bulk nanostructureBi0,4Sb1,6Te3 fabricated by SPS method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 10, 'nm', 3],[12.0, 360, 'K', 0]

Sb1
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(121000, 121001)
 It was reached thethermoelectric figure of merit ZT1.22 (at 360 K) in the bulk nanostructureBi0,4Sb1,6Te3 fabricated by SPS method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 10, 'nm', 3],[16.0, 360, 'K', 0]

Te3
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(121004, 121005)
 It was reached thethermoelectric figure of merit ZT1.22 (at 360 K) in the bulk nanostructureBi0,4Sb1,6Te3 fabricated by SPS method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 10, 'nm', 3],[20.0, 360, 'K', 0]

SPS
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(121011, 121013)
 It was reached thethermoelectric figure of merit ZT1.22 (at 360 K) in the bulk nanostructureBi0,4Sb1,6Te3 fabricated by SPS method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 10, 'nm', 3],[27.0, 360, 'K', 0]

Sb2-xTe3
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(121051, 121056)
 Some mechanisms of the improvement ofthe thermoelectric efficiency in bulk nanocrystalline semiconductors based onBixSb2-xTe3 are studied theoretically.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[277.0, 10, 'nm', 4],[67.0, 360, 'K', 1]

Sb2-xTe3
###Bulk Nanocrystalline Thermoelectrics Based on Bi-Sb-Te Solid Solution|L. P. Bulat.,D. A. Pshenai-Severin,V. V. Karatayev,V. B. Osvenskii,Yu. N. Parkhomenko,V. Lavrentev,A. Sorokin,V. D. Blank,G. I. Pivovarov,V. T. Bublik,N. Yu. Tabachkova###
(121140, 121145)
 The theoreticaldependence of the electric and heat conductivities and the thermoelectric poweras the function of nanograins size in BixSb2-xTe3 bulk nanostructure are quiteaccurately correlates with the experimental data.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[366.0, 10, 'nm', 6],[156.0, 360, 'K', 3]

SnTe
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121225, 121226)
 The recent discovery of excellent thermoelectric properties and topologicalsurface states in SnTe-based compounds has attracted extensive attention invarious research areas.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnTe
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121254, 121255)
 Indium doped SnTe is of particular interest because,depending on the doping level, it can either generate resonant states in thebulk valence band leading to enhanced thermoelectric properties, or inducesuperconductivity that coexists with topological states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121349, 121349)
 Here we report on thevapor deposition of In-doped SnTe nanowires and the study of their surfaceoxidation and thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnTe
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121353, 121354)
 Here we report on thevapor deposition of In-doped SnTe nanowires and the study of their surfaceoxidation and thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121392, 121392)
 The nanowire growth is assisted by Aucatalysts, and their morphologies vary as a function of substrate position andtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In2O3
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121482, 121485)
 X<missing VAR>-rayphotoelectron spectroscopy studies suggest that the nanowire surface iscomposed of In2O3, SnO2, Te and TeO2 which can be readily removed by argon ionsputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnO2
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121488, 121490)
 X<missing VAR>-rayphotoelectron spectroscopy studies suggest that the nanowire surface iscomposed of In2O3, SnO2, Te and TeO2 which can be readily removed by argon ionsputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121493, 121493)
 X<missing VAR>-rayphotoelectron spectroscopy studies suggest that the nanowire surface iscomposed of In2O3, SnO2, Te and TeO2 which can be readily removed by argon ionsputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TeO2
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121497, 121499)
 X<missing VAR>-rayphotoelectron spectroscopy studies suggest that the nanowire surface iscomposed of In2O3, SnO2, Te and TeO2 which can be readily removed by argon ionsputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121571, 121571)
 Characterizations ofelectrical conductivity sigma, thermopower S, and thermal conductivityk<missing VAR>appa were performed on the same In-doped nanowire which shows suppressedsigma and k<missing VAR>appa but enhanced S yielding an improved thermoelectric figureof merit ZT than the undoped SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121594, 121594)
 Characterizations ofelectrical conductivity sigma, thermopower S, and thermal conductivityk<missing VAR>appa were performed on the same In-doped nanowire which shows suppressedsigma and k<missing VAR>appa but enhanced S yielding an improved thermoelectric figureof merit ZT than the undoped SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121618, 121618)
 Characterizations ofelectrical conductivity sigma, thermopower S, and thermal conductivityk<missing VAR>appa were performed on the same In-doped nanowire which shows suppressedsigma and k<missing VAR>appa but enhanced S yielding an improved thermoelectric figureof merit ZT than the undoped SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnTe
###Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires|Z. Li,E. Z. Xu,Y. Losovyj,N. Li,A. P. Chen,B. Swartzentruber,N. Sinitsyn,J. K. Yoo,Q. X. Jia,S. X. Zhang###
(121644, 121645)
 Characterizations ofelectrical conductivity sigma, thermopower S, and thermal conductivityk<missing VAR>appa were performed on the same In-doped nanowire which shows suppressedsigma and k<missing VAR>appa but enhanced S yielding an improved thermoelectric figureof merit ZT than the undoped SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI2
###High thermoelectric efficiency in monolayer PbI$_2$ from 300 K to 900 K|Bo Peng,Haodong Mei,Hao Zhang,Hezhu Shao,Ke Xu,Gang Ni,Qingyuan Jin,Costas M. Soukoulis,Heyuan Zhu###
(121666, 121668)
High thermoelectric efficiency in monolayer PbI2 from 300 K to 900 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 300, 'K', 0],[6.0, 900, 'K', 0],[200.0, 0.065, 'W', 6],[222.0, 2, 'D', 6],[316.0, 1, 'for', 8],[340.0, 900, 'K', 8],[351.0, 4.9, 'is', 9],[356.0, 900, 'K', 9]

PbI2
###High thermoelectric efficiency in monolayer PbI$_2$ from 300 K to 900 K|Bo Peng,Haodong Mei,Hao Zhang,Hezhu Shao,Ke Xu,Gang Ni,Qingyuan Jin,Costas M. Soukoulis,Heyuan Zhu###
(121692, 121694)
 By using a first-principles approach, monolayer PbI2 is found to havegreat potential in thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 300, 'K', 1],[18.0, 900, 'K', 1],[174.0, 0.065, 'W', 5],[196.0, 2, 'D', 5],[290.0, 1, 'for', 7],[314.0, 900, 'K', 7],[325.0, 4.9, 'is', 8],[330.0, 900, 'K', 8]

At
###High thermoelectric efficiency in monolayer PbI$_2$ from 300 K to 900 K|Bo Peng,Haodong Mei,Hao Zhang,Hezhu Shao,Ke Xu,Gang Ni,Qingyuan Jin,Costas M. Soukoulis,Heyuan Zhu###
(121798, 121798)
 At high concentrations, ionized impurity scatteringbecomes stronger.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 300, 'K', 4],[124.0, 900, 'K', 4],[70.0, 0.065, 'W', 2],[92.0, 2, 'D', 2],[186.0, 1, 'for', 4],[210.0, 900, 'K', 4],[221.0, 4.9, 'is', 5],[226.0, 900, 'K', 5]

PbI2
###High thermoelectric efficiency in monolayer PbI$_2$ from 300 K to 900 K|Bo Peng,Haodong Mei,Hao Zhang,Hezhu Shao,Ke Xu,Gang Ni,Qingyuan Jin,Costas M. Soukoulis,Heyuan Zhu###
(121864, 121866)
 The lattice thermal conductivity of PbI2, 0.065 W/m<missing VAR>K at 300K, is the lowest among other 2D thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 300, 'K', 6],[190.0, 900, 'K', 6],[2.0, 0.065, 'W', 0],[24.0, 2, 'D', 0],[118.0, 1, 'for', 2],[142.0, 900, 'K', 2],[153.0, 4.9, 'is', 3],[158.0, 900, 'K', 3]

K
###High thermoelectric efficiency in monolayer PbI$_2$ from 300 K to 900 K|Bo Peng,Haodong Mei,Hao Zhang,Hezhu Shao,Ke Xu,Gang Ni,Qingyuan Jin,Costas M. Soukoulis,Heyuan Zhu###
(121871, 121871)
 The lattice thermal conductivity of PbI2, 0.065 W/m<missing VAR>K at 300K, is the lowest among other 2D thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 300, 'K', 6],[197.0, 900, 'K', 6],[3.0, 0.065, 'W', 0],[19.0, 2, 'D', 0],[113.0, 1, 'for', 2],[137.0, 900, 'K', 2],[148.0, 4.9, 'is', 3],[153.0, 900, 'K', 3]

K
###High thermoelectric efficiency in monolayer PbI$_2$ from 300 K to 900 K|Bo Peng,Haodong Mei,Hao Zhang,Hezhu Shao,Ke Xu,Gang Ni,Qingyuan Jin,Costas M. Soukoulis,Heyuan Zhu###
(121878, 121878)
 The lattice thermal conductivity of PbI2, 0.065 W/m<missing VAR>K at 300K, is the lowest among other 2D thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 300, 'K', 6],[204.0, 900, 'K', 6],[10.0, 0.065, 'W', 0],[12.0, 2, 'D', 0],[106.0, 1, 'for', 2],[130.0, 900, 'K', 2],[141.0, 4.9, 'is', 3],[146.0, 900, 'K', 3]

K
###High thermoelectric efficiency in monolayer PbI$_2$ from 300 K to 900 K|Bo Peng,Haodong Mei,Hao Zhang,Hezhu Shao,Ke Xu,Gang Ni,Qingyuan Jin,Costas M. Soukoulis,Heyuan Zhu###
(122005, 122005)
 These electrical and phonon transport properties enable highthermoelectric figure of merit over 1 for both p<missing VAR>-type and n<missing VAR>-type doping from300 K to 900 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 300, 'K', 8],[331.0, 900, 'K', 8],[137.0, 0.065, 'W', 2],[115.0, 2, 'D', 2],[21.0, 1, 'for', 0],[3.0, 900, 'K', 0],[14.0, 4.9, 'is', 1],[19.0, 900, 'K', 1]

PbI2
###High thermoelectric efficiency in monolayer PbI$_2$ from 300 K to 900 K|Bo Peng,Haodong Mei,Hao Zhang,Hezhu Shao,Ke Xu,Gang Ni,Qingyuan Jin,Costas M. Soukoulis,Heyuan Zhu###
(122070, 122072)
 Our work shows exceptionallygood thermoelectric energy conversion efficiency in monolayer PbI2, whichcan be integrated to the existing photovoltaic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 300, 'K', 10],[396.0, 900, 'K', 10],[202.0, 0.065, 'W', 4],[180.0, 2, 'D', 4],[86.0, 1, 'for', 2],[62.0, 900, 'K', 2],[51.0, 4.9, 'is', 1],[46.0, 900, 'K', 1]

C
###Signature of the transition to a bound state in thermoelectric quantum transport|Étienne Jussiau,Masahiro Hasegawa,Robert S. Whitney###
(122376, 122376)
 This can result inthe steady-state D<missing VAR>C electric and thermoelectric responses having a very strongdependence on coupling close to critical coupling.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fm3
###Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion|S. Joseph Poon###
(122596, 122597)
 Half-Heusler compounds (space group Fm3m) has garnered increasing attentionin recent years in the thermoelectric community.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0
[95.0, 100, 's', 1],[204.0, 10, '%', 4],[216.0, 9, 'W', 4],[282.0, 2012, 'thanks', 6],[335.0, 1990, 's', 8],[373.0, -2, ',', 8]

NiSn
###Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion|S. Joseph Poon###
(122636, 122637)
 Three decades ago, refractoryR<missing VAR>NiSn half-Heusler compounds (R<missing VAR> represents refractory metals such as Hf, Zr,Ti) were found to be narrow-gap semiconductors with large Seebeck coefficientsin 100s of micro-volt per Kelvin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 100, 's', 0],[164.0, 10, '%', 3],[176.0, 9, 'W', 3],[242.0, 2012, 'thanks', 5],[295.0, 1990, 's', 7],[333.0, -2, ',', 7]

Hf
###Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion|S. Joseph Poon###
(122658, 122658)
 Three decades ago, refractoryR<missing VAR>NiSn half-Heusler compounds (R<missing VAR> represents refractory metals such as Hf, Zr,Ti) were found to be narrow-gap semiconductors with large Seebeck coefficientsin 100s of micro-volt per Kelvin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 100, 's', 0],[143.0, 10, '%', 3],[155.0, 9, 'W', 3],[221.0, 2012, 'thanks', 5],[274.0, 1990, 's', 7],[312.0, -2, ',', 7]

Zr
###Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion|S. Joseph Poon###
(122661, 122661)
 Three decades ago, refractoryR<missing VAR>NiSn half-Heusler compounds (R<missing VAR> represents refractory metals such as Hf, Zr,Ti) were found to be narrow-gap semiconductors with large Seebeck coefficientsin 100s of micro-volt per Kelvin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 100, 's', 0],[140.0, 10, '%', 3],[152.0, 9, 'W', 3],[218.0, 2012, 'thanks', 5],[271.0, 1990, 's', 7],[309.0, -2, ',', 7]

Ti
###Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion|S. Joseph Poon###
(122665, 122665)
 Three decades ago, refractoryR<missing VAR>NiSn half-Heusler compounds (R<missing VAR> represents refractory metals such as Hf, Zr,Ti) were found to be narrow-gap semiconductors with large Seebeck coefficientsin 100s of micro-volt per Kelvin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 100, 's', 0],[136.0, 10, '%', 3],[148.0, 9, 'W', 3],[214.0, 2012, 'thanks', 5],[267.0, 1990, 's', 7],[305.0, -2, ',', 7]

(HH)
###Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion|S. Joseph Poon###
(122712, 122715)
 Today, half-Heusler (HH) compounds haveemerged as promising thermoelectric materials in the intermediate temperaturerange (400-800o<missing VAR>C).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 100, 's', 1],[86.0, 10, '%', 2],[98.0, 9, 'W', 2],[164.0, 2012, 'thanks', 4],[217.0, 1990, 's', 6],[255.0, -2, ',', 6]

C
###Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion|S. Joseph Poon###
(122748, 122748)
 Today, half-Heusler (HH) compounds haveemerged as promising thermoelectric materials in the intermediate temperaturerange (400-800o<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 100, 's', 1],[53.0, 10, '%', 2],[65.0, 9, 'W', 2],[131.0, 2012, 'thanks', 4],[184.0, 1990, 's', 6],[222.0, -2, ',', 6]

HH
###Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion|S. Joseph Poon###
(122752, 122753)
 HH materials are endowed with good thermal stability andscalability.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 100, 's', 2],[48.0, 10, '%', 1],[60.0, 9, 'W', 1],[126.0, 2012, 'thanks', 3],[179.0, 1990, 's', 5],[217.0, -2, ',', 5]

HH
###Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion|S. Joseph Poon###
(122787, 122788)
 Thermoelectric n-p modules based on HH materials demonstrateconversion efficiency near 10% and power density output near 9 W/cm2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 100, 's', 3],[13.0, 10, '%', 0],[25.0, 9, 'W', 0],[91.0, 2012, 'thanks', 2],[144.0, 1990, 's', 4],[182.0, -2, ',', 4]

As
###Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion|S. Joseph Poon###
(122895, 122895)
 As a result, ZT has risen from 1 to 1.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 100, 's', 6],[94.0, 10, '%', 3],[82.0, 9, 'W', 3],[16.0, 2012, 'thanks', 1],[37.0, 1990, 's', 1],[75.0, -2, ',', 1]

HH
###Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion|S. Joseph Poon###
(122980, 122981)
 The various advances madesince the early 1990s to the present are recounted by categorizing half-Heuslermaterials into three generations (Gen) Gen-1 Gen-2, and Gen-3 HH materials.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 100, 's', 7],[179.0, 10, '%', 4],[167.0, 9, 'W', 4],[101.0, 2012, 'thanks', 2],[48.0, 1990, 's', 0],[10.0, -2, ',', 0]

N
###Dimensional crossover and enhanced thermoelectric efficiency due to broken symmetry in graphene antidot lattices|M. Neşet Çınar,Hâldun Sevinçli###
(123204, 123204)
 Weinvestigate the transport and thermoelectric properties of these 2D G<missing VAR>ALs byusing non-equilibrium Green function (NEGF) method.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2, 'D', 1],[20.0, 2, 'D', 0],[32.0, 1, 'D', 1],[74.0, 0.9, 'at', 1],[122.0, 1, 'D', 2],[193.0, 2, 'D', 3]

F
###Dimensional crossover and enhanced thermoelectric efficiency due to broken symmetry in graphene antidot lattices|M. Neşet Çınar,Hâldun Sevinçli###
(123207, 123207)
 Weinvestigate the transport and thermoelectric properties of these 2D G<missing VAR>ALs byusing non-equilibrium Green function (NEGF) method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'D', 1],[23.0, 2, 'D', 0],[29.0, 1, 'D', 1],[71.0, 0.9, 'at', 1],[119.0, 1, 'D', 2],[190.0, 2, 'D', 3]

In
###Cost-Performance Trade-off in Thermoelectric Air Conditioning System with Graded and Constant Material Properties|Abhishek Saini,Sarah J. Watzman,Je-Hyeong Bahk###
(123488, 123488)
 Inthis paper, we present a detailed system-level modeling for thermoelectric airconditioning system with position-dependent (graded) and constant materialproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[406.0, 1, 'and', 7]

(COP)
###Cost-Performance Trade-off in Thermoelectric Air Conditioning System with Graded and Constant Material Properties|Abhishek Saini,Sarah J. Watzman,Je-Hyeong Bahk###
(123738, 123742)
 Both constant materialproperties and graded properties are considered for the TE materials, and theyare compared in terms of the degree of cooling, coefficient of performance(COP), and power consumption.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1, 'and', 3]

COP
###Cost-Performance Trade-off in Thermoelectric Air Conditioning System with Graded and Constant Material Properties|Abhishek Saini,Sarah J. Watzman,Je-Hyeong Bahk###
(123858, 123860)
 We find that graded materials can enhance the degree ofcooling, but only at the expense of COP, compared to the case of constantproperty materials.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1, 'and', 1]

B
###Electronic transport descriptors for the rapid screening of thermoelectric materials|Tianqi Deng,Jose Recatala-Gomez,Masato Ohnishi,D. V. Maheshwar Repaka,Pawan Kumar,Ady Suwardi,Anas Abutaha,Iris Nandhakumar,Kanishka Biswas,Michael B. Sullivan,Gang Wu,Junichiro Shiomi,Shuo-Wang Yang,Kedar Hippalgaonkar###
(124151, 124151)
 Using a data-driven screening, we selected 12 potential candidatesin the trigonal ABX<missing VAR>2 family, followed by charge transport property simulationsfrom first principles.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 12, 'potential', 0],[177.0, 1, 'at', 2],[178.0, 500, 'K', 2]

AgBiS2
###Electronic transport descriptors for the rapid screening of thermoelectric materials|Tianqi Deng,Jose Recatala-Gomez,Masato Ohnishi,D. V. Maheshwar Repaka,Pawan Kumar,Ady Suwardi,Anas Abutaha,Iris Nandhakumar,Kanishka Biswas,Michael B. Sullivan,Gang Wu,Junichiro Shiomi,Shuo-Wang Yang,Kedar Hippalgaonkar###
(124271, 124274)
 Combined withcalculations of thermal conductivity based on three-phonon scattering, wepredict p<missing VAR>-type AgBiS2 and TlBiTe2 as potential high-performance thermoelectricsin the intermediate temperature range for low grade waste heat harvesting, witha predicted zT above 1 at 500 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 12, 'potential', 2],[54.0, 1, 'at', 0],[55.0, 500, 'K', 0]

TlBiTe2
###Electronic transport descriptors for the rapid screening of thermoelectric materials|Tianqi Deng,Jose Recatala-Gomez,Masato Ohnishi,D. V. Maheshwar Repaka,Pawan Kumar,Ady Suwardi,Anas Abutaha,Iris Nandhakumar,Kanishka Biswas,Michael B. Sullivan,Gang Wu,Junichiro Shiomi,Shuo-Wang Yang,Kedar Hippalgaonkar###
(124278, 124281)
 Combined withcalculations of thermal conductivity based on three-phonon scattering, wepredict p<missing VAR>-type AgBiS2 and TlBiTe2 as potential high-performance thermoelectricsin the intermediate temperature range for low grade waste heat harvesting, witha predicted zT above 1 at 500 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 12, 'potential', 2],[47.0, 1, 'at', 0],[48.0, 500, 'K', 0]

In
###Electronic transport descriptors for the rapid screening of thermoelectric materials|Tianqi Deng,Jose Recatala-Gomez,Masato Ohnishi,D. V. Maheshwar Repaka,Pawan Kumar,Ady Suwardi,Anas Abutaha,Iris Nandhakumar,Kanishka Biswas,Michael B. Sullivan,Gang Wu,Junichiro Shiomi,Shuo-Wang Yang,Kedar Hippalgaonkar###
(124374, 124374)
 In addition to low carrier mass, high dielectricconstant was found to be an important factor towards high carrier mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 12, 'potential', 4],[46.0, 1, 'at', 2],[45.0, 500, 'K', 2]

Ba2Sb
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124525, 124527)
Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbX<missing VAR>O6 (X<missing VAR>Nb, Ta) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[477.0, 26.8, '%', 9]

O6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124529, 124530)
Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbX<missing VAR>O6 (X<missing VAR>Nb, Ta) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[474.0, 26.8, '%', 9]

Nb
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124534, 124534)
Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbX<missing VAR>O6 (X<missing VAR>Nb, Ta) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[470.0, 26.8, '%', 9]

Ta
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124537, 124537)
Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbX<missing VAR>O6 (X<missing VAR>Nb, Ta) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[467.0, 26.8, '%', 9]

S
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124577, 124577)
 We report the structural, mechanical, electronic, optical, thermoelectricproperties and spectroscopic limited maximum efficiency (SLME) of oxide doubleperovskite structure Ba2SbNbO6 and Ba2SbTaO6 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[427.0, 26.8, '%', 8]

Ba2SbNbO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124594, 124599)
 We report the structural, mechanical, electronic, optical, thermoelectricproperties and spectroscopic limited maximum efficiency (SLME) of oxide doubleperovskite structure Ba2SbNbO6 and Ba2SbTaO6 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 26.8, '%', 8]

Ba2SbTaO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124603, 124608)
 We report the structural, mechanical, electronic, optical, thermoelectricproperties and spectroscopic limited maximum efficiency (SLME) of oxide doubleperovskite structure Ba2SbNbO6 and Ba2SbTaO6 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 26.8, '%', 8]

(B)
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124690, 124692)
 The calculated data of bulk modulus (B), shearmodulus (G), and Youngs<missing VAR> modulus (E) for Ba2SbTaO6 are found to be greater thanthose of Ba2SbNbO6.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 26.8, '%', 5]

Ba2SbTaO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124718, 124723)
 The calculated data of bulk modulus (B), shearmodulus (G), and Youngs<missing VAR> modulus (E) for Ba2SbTaO6 are found to be greater thanthose of Ba2SbNbO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 26.8, '%', 5]

Ba2SbNbO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124742, 124747)
 The calculated data of bulk modulus (B), shearmodulus (G), and Youngs<missing VAR> modulus (E) for Ba2SbTaO6 are found to be greater thanthose of Ba2SbNbO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 26.8, '%', 5]

B
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124765, 124765)
 The ratio of Bulk to shear ratio (B/G) shows that Ba2SbNbO6and Ba2SbTaO6 are ductile.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 26.8, '%', 4]

Ba2SbNbO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124774, 124779)
 The ratio of Bulk to shear ratio (B/G) shows that Ba2SbNbO6and Ba2SbTaO6 are ductile.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 26.8, '%', 4]

Ba2SbTaO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124784, 124789)
 The ratio of Bulk to shear ratio (B/G) shows that Ba2SbNbO6and Ba2SbTaO6 are ductile.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 26.8, '%', 4]

Ba2Sb
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124958, 124960)
 The high absorptionspectra and good figure of merit (ZT) reveal that both the studied compounds,Ba2SbX<missing VAR>O6 (X<missing VAR>  Nb, Ta) are promising materials for photovoltaic andthermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 26.8, '%', 1]

O6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124962, 124963)
 The high absorptionspectra and good figure of merit (ZT) reveal that both the studied compounds,Ba2SbX<missing VAR>O6 (X<missing VAR>  Nb, Ta) are promising materials for photovoltaic andthermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 26.8, '%', 1]

Nb
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124969, 124969)
 The high absorptionspectra and good figure of merit (ZT) reveal that both the studied compounds,Ba2SbX<missing VAR>O6 (X<missing VAR>  Nb, Ta) are promising materials for photovoltaic andthermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 26.8, '%', 1]

Ta
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124972, 124972)
 The high absorptionspectra and good figure of merit (ZT) reveal that both the studied compounds,Ba2SbX<missing VAR>O6 (X<missing VAR>  Nb, Ta) are promising materials for photovoltaic andthermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 26.8, '%', 1]

S
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(124997, 124997)
 The calculated SLME of 26.8% reveals that Ba2SNbO6is an appealing candidate for single-junction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 26.8, '%', 0]

Ba2SNbO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(125011, 125016)
 The calculated SLME of 26.8% reveals that Ba2SNbO6is an appealing candidate for single-junction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 26.8, '%', 0]

InAsSb
###Giant reduction of thermal conductivity in twinning superlattice InAsSb nanowires|Lorenzo Peri,Domenic Prete,Valeria Demontis,Valentina Zannier,Francesca Rossi,Lucia Sorba,Fabio Beltram,Francesco Rossella###
(125062, 125064)
Giant reduction of thermal conductivity in twinning superlattice InAsSb nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Giant reduction of thermal conductivity in twinning superlattice InAsSb nanowires|Lorenzo Peri,Domenic Prete,Valeria Demontis,Valentina Zannier,Francesca Rossi,Lucia Sorba,Fabio Beltram,Francesco Rossella###
(125210, 125210)
 In this work wedemonstrate a drastic reduction of thermal conductivity in III-V semiconductornanowires due to the presence of intentionally realized periodic crystallattice twin planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Giant reduction of thermal conductivity in twinning superlattice InAsSb nanowires|Lorenzo Peri,Domenic Prete,Valeria Demontis,Valentina Zannier,Francesca Rossi,Lucia Sorba,Fabio Beltram,Francesco Rossella###
(125235, 125237)
 In this work wedemonstrate a drastic reduction of thermal conductivity in III-V semiconductornanowires due to the presence of intentionally realized periodic crystallattice twin planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Giant reduction of thermal conductivity in twinning superlattice InAsSb nanowires|Lorenzo Peri,Domenic Prete,Valeria Demontis,Valentina Zannier,Francesca Rossi,Lucia Sorba,Fabio Beltram,Francesco Rossella###
(125239, 125239)
 In this work wedemonstrate a drastic reduction of thermal conductivity in III-V semiconductornanowires due to the presence of intentionally realized periodic crystallattice twin planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Thermoelectric properties of cement composite analogues from first principles calculations|Esther Orisakwe,Conrad Johnston,Ruchita Jani,Xiaoli Liu,Lorenzo Stella,Jorge Kohanoff,Niall Holmes,Brian Norton,Ming Qu,Hongxi Yin,Kazuaki Yazawa###
(125739, 125739)
 We present a systematicinvestigation of the electronic transport coefficients relevant to thethermoelectric materials of the calcium silicate hydrate (C-S-H) gel analogue,tobermorite, using Density Functional Theory calculations with the Boltzmanntransport method.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0.983, 'at', 3],[200.0, 0.985, 'at', 3],[230.0, 1.2, 'at', 3]

S
###Thermoelectric properties of cement composite analogues from first principles calculations|Esther Orisakwe,Conrad Johnston,Ruchita Jani,Xiaoli Liu,Lorenzo Stella,Jorge Kohanoff,Niall Holmes,Brian Norton,Ming Qu,Hongxi Yin,Kazuaki Yazawa###
(125741, 125741)
 We present a systematicinvestigation of the electronic transport coefficients relevant to thethermoelectric materials of the calcium silicate hydrate (C-S-H) gel analogue,tobermorite, using Density Functional Theory calculations with the Boltzmanntransport method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 0.983, 'at', 3],[198.0, 0.985, 'at', 3],[228.0, 1.2, 'at', 3]

H
###Thermoelectric properties of cement composite analogues from first principles calculations|Esther Orisakwe,Conrad Johnston,Ruchita Jani,Xiaoli Liu,Lorenzo Stella,Jorge Kohanoff,Niall Holmes,Brian Norton,Ming Qu,Hongxi Yin,Kazuaki Yazawa###
(125743, 125743)
 We present a systematicinvestigation of the electronic transport coefficients relevant to thethermoelectric materials of the calcium silicate hydrate (C-S-H) gel analogue,tobermorite, using Density Functional Theory calculations with the Boltzmanntransport method.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0.983, 'at', 3],[196.0, 0.985, 'at', 3],[226.0, 1.2, 'at', 3]

K
###Thermoelectric properties of cement composite analogues from first principles calculations|Esther Orisakwe,Conrad Johnston,Ruchita Jani,Xiaoli Liu,Lorenzo Stella,Jorge Kohanoff,Niall Holmes,Brian Norton,Ming Qu,Hongxi Yin,Kazuaki Yazawa###
(125813, 125813)
 The calculated values of the Seebeck coefficient are withinthe typical magnitude (200 - 600 mu V/K) indicative of a good thermoelectricmaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.983, 'at', 2],[126.0, 0.985, 'at', 2],[156.0, 1.2, 'at', 2]

Si
###Thermoelectric properties of cement composite analogues from first principles calculations|Esther Orisakwe,Conrad Johnston,Ruchita Jani,Xiaoli Liu,Lorenzo Stella,Jorge Kohanoff,Niall Holmes,Brian Norton,Ming Qu,Hongxi Yin,Kazuaki Yazawa###
(125874, 125874)
 The tobermorite models are predicted to be intrinsically p<missing VAR>-typethermoelectric material because of the presence of large concentration of theSi-O tetrahedra sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.983, 'at', 1],[65.0, 0.985, 'at', 1],[95.0, 1.2, 'at', 1]

O
###Thermoelectric properties of cement composite analogues from first principles calculations|Esther Orisakwe,Conrad Johnston,Ruchita Jani,Xiaoli Liu,Lorenzo Stella,Jorge Kohanoff,Niall Holmes,Brian Norton,Ming Qu,Hongxi Yin,Kazuaki Yazawa###
(125876, 125876)
 The tobermorite models are predicted to be intrinsically p<missing VAR>-typethermoelectric material because of the presence of large concentration of theSi-O tetrahedra sites.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.983, 'at', 1],[63.0, 0.985, 'at', 1],[93.0, 1.2, 'at', 1]

K
###Thermoelectric properties of cement composite analogues from first principles calculations|Esther Orisakwe,Conrad Johnston,Ruchita Jani,Xiaoli Liu,Lorenzo Stella,Jorge Kohanoff,Niall Holmes,Brian Norton,Ming Qu,Hongxi Yin,Kazuaki Yazawa###
(125916, 125916)
 The calculated electronic ZT for the tobermoritemodels have their optimal values of 0.983 at (400 mathrmK and 1017mathrmcm-3) for tobermorite 9 r<missing VAR>A, 0.985 at (400 mathrmK and1017 mathrmcm-3) for tobermorite 11 r<missing VAR>A and 1.20 at (225mathrmK and 1019 mathrmcm-3) for tobermorite 14 r<missing VAR>A,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.983, 'at', 0],[23.0, 0.985, 'at', 0],[53.0, 1.2, 'at', 0]

K
###Thermoelectric properties of cement composite analogues from first principles calculations|Esther Orisakwe,Conrad Johnston,Ruchita Jani,Xiaoli Liu,Lorenzo Stella,Jorge Kohanoff,Niall Holmes,Brian Norton,Ming Qu,Hongxi Yin,Kazuaki Yazawa###
(125945, 125945)
 The calculated electronic ZT for the tobermoritemodels have their optimal values of 0.983 at (400 mathrmK and 1017mathrmcm-3) for tobermorite 9 r<missing VAR>A, 0.985 at (400 mathrmK and1017 mathrmcm-3) for tobermorite 11 r<missing VAR>A and 1.20 at (225mathrmK and 1019 mathrmcm-3) for tobermorite 14 r<missing VAR>A,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.983, 'at', 0],[6.0, 0.985, 'at', 0],[24.0, 1.2, 'at', 0]

K
###Thermoelectric properties of cement composite analogues from first principles calculations|Esther Orisakwe,Conrad Johnston,Ruchita Jani,Xiaoli Liu,Lorenzo Stella,Jorge Kohanoff,Niall Holmes,Brian Norton,Ming Qu,Hongxi Yin,Kazuaki Yazawa###
(125976, 125976)
 The calculated electronic ZT for the tobermoritemodels have their optimal values of 0.983 at (400 mathrmK and 1017mathrmcm-3) for tobermorite 9 r<missing VAR>A, 0.985 at (400 mathrmK and1017 mathrmcm-3) for tobermorite 11 r<missing VAR>A and 1.20 at (225mathrmK and 1019 mathrmcm-3) for tobermorite 14 r<missing VAR>A,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0.983, 'at', 0],[37.0, 0.985, 'at', 0],[7.0, 1.2, 'at', 0]

NaIn
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126011, 126012)
NaInX<missing VAR>2 (X<missing VAR>  S, Se) layered materials for energy harvesting applications First-principles insights into optoelectronic and thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[524.0, 1000, 'K', 9],[554.0, 151.5, 'micro', 9],[564.0, 154, 'micro', 9]

S
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126020, 126020)
NaInX<missing VAR>2 (X<missing VAR>  S, Se) layered materials for energy harvesting applications First-principles insights into optoelectronic and thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[516.0, 1000, 'K', 9],[546.0, 151.5, 'micro', 9],[556.0, 154, 'micro', 9]

Se
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126023, 126023)
NaInX<missing VAR>2 (X<missing VAR>  S, Se) layered materials for energy harvesting applications First-principles insights into optoelectronic and thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[513.0, 1000, 'K', 9],[543.0, 151.5, 'micro', 9],[553.0, 154, 'micro', 9]

In
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126055, 126055)
 In the present study, the structural, electronic, optical and thermoelectricproperties of two isostructural chalcogenide materials, NaInS2 and NaInSe2 withhexagonal symmetry (R<missing VAR>-3m) have been studied using the first principles method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[481.0, 1000, 'K', 8],[511.0, 151.5, 'micro', 8],[521.0, 154, 'micro', 8]

NaInS2
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126092, 126095)
 In the present study, the structural, electronic, optical and thermoelectricproperties of two isostructural chalcogenide materials, NaInS2 and NaInSe2 withhexagonal symmetry (R<missing VAR>-3m) have been studied using the first principles method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[441.0, 1000, 'K', 8],[471.0, 151.5, 'micro', 8],[481.0, 154, 'micro', 8]

NaInSe2
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126099, 126102)
 In the present study, the structural, electronic, optical and thermoelectricproperties of two isostructural chalcogenide materials, NaInS2 and NaInSe2 withhexagonal symmetry (R<missing VAR>-3m) have been studied using the first principles method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[434.0, 1000, 'K', 8],[464.0, 151.5, 'micro', 8],[474.0, 154, 'micro', 8]

Na
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126222, 126222)
The strong hybridizations among s<missing VAR> orbitals of Na, In and Se atomspush the bottom of the conduction band downward resulting in a narrower bandgap of NaInSe2 compared to that of NaInS2 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 1000, 'K', 5],[344.0, 151.5, 'micro', 5],[354.0, 154, 'micro', 5]

In
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126225, 126225)
The strong hybridizations among s<missing VAR> orbitals of Na, In and Se atomspush the bottom of the conduction band downward resulting in a narrower bandgap of NaInSe2 compared to that of NaInS2 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 1000, 'K', 5],[341.0, 151.5, 'micro', 5],[351.0, 154, 'micro', 5]

Se
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126229, 126229)
The strong hybridizations among s<missing VAR> orbitals of Na, In and Se atomspush the bottom of the conduction band downward resulting in a narrower bandgap of NaInSe2 compared to that of NaInS2 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 1000, 'K', 5],[337.0, 151.5, 'micro', 5],[347.0, 154, 'micro', 5]

NaInSe2
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126265, 126268)
The strong hybridizations among s<missing VAR> orbitals of Na, In and Se atomspush the bottom of the conduction band downward resulting in a narrower bandgap of NaInSe2 compared to that of NaInS2 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 1000, 'K', 5],[298.0, 151.5, 'micro', 5],[308.0, 154, 'micro', 5]

NaInS2
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126278, 126281)
The strong hybridizations among s<missing VAR> orbitals of Na, In and Se atomspush the bottom of the conduction band downward resulting in a narrower bandgap of NaInSe2 compared to that of NaInS2 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 1000, 'K', 5],[285.0, 151.5, 'micro', 5],[295.0, 154, 'micro', 5]

NaIn
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126352, 126353)
 Different optical(dielectric function, photoconductivity, absorption coefficient, reflectivity,refractive index and loss function) and thermoelectric (Seebeck coefficient,electrical conductivity, power factor and thermal conductivity) properties ofNaInX<missing VAR>2 (X<missing VAR>  S, Se) have been studied in detail for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 1000, 'K', 4],[213.0, 151.5, 'micro', 4],[223.0, 154, 'micro', 4]

S
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126361, 126361)
 Different optical(dielectric function, photoconductivity, absorption coefficient, reflectivity,refractive index and loss function) and thermoelectric (Seebeck coefficient,electrical conductivity, power factor and thermal conductivity) properties ofNaInX<missing VAR>2 (X<missing VAR>  S, Se) have been studied in detail for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 1000, 'K', 4],[205.0, 151.5, 'micro', 4],[215.0, 154, 'micro', 4]

Se
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126364, 126364)
 Different optical(dielectric function, photoconductivity, absorption coefficient, reflectivity,refractive index and loss function) and thermoelectric (Seebeck coefficient,electrical conductivity, power factor and thermal conductivity) properties ofNaInX<missing VAR>2 (X<missing VAR>  S, Se) have been studied in detail for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 1000, 'K', 4],[202.0, 151.5, 'micro', 4],[212.0, 154, 'micro', 4]

NaIn
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126422, 126423)
 It is foundthat all these properties are significantly anisotropic due to the stronglylayered structure of NaInX<missing VAR>2 (X<missing VAR>  S, Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 1000, 'K', 3],[143.0, 151.5, 'micro', 3],[153.0, 154, 'micro', 3]

S
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126431, 126431)
 It is foundthat all these properties are significantly anisotropic due to the stronglylayered structure of NaInX<missing VAR>2 (X<missing VAR>  S, Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 1000, 'K', 3],[135.0, 151.5, 'micro', 3],[145.0, 154, 'micro', 3]

Se
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126434, 126434)
 It is foundthat all these properties are significantly anisotropic due to the stronglylayered structure of NaInX<missing VAR>2 (X<missing VAR>  S, Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 1000, 'K', 3],[132.0, 151.5, 'micro', 3],[142.0, 154, 'micro', 3]

(UV)
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126469, 126472)
 Strong optical absorption with sharppeaks is found in the far visible to mid ultraviolet (UV) regions while thereflectivity is low in the UV region for both the compounds.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1000, 'K', 2],[94.0, 151.5, 'micro', 2],[104.0, 154, 'micro', 2]

UV
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126491, 126492)
 Strong optical absorption with sharppeaks is found in the far visible to mid ultraviolet (UV) regions while thereflectivity is low in the UV region for both the compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[44.0, 1000, 'K', 2],[74.0, 151.5, 'micro', 2],[84.0, 154, 'micro', 2]

NaInS2
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126540, 126543)
The calculatedthermoelectric power factors at 1000 K for NaInS2 and NaInSe2 along a-axis arefound to be 151.5 micro Watt /cmK2 and 154 micro Watt/cmK2, respectively andthe corresponding ZT values are 0.70.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1000, 'K', 0],[23.0, 151.5, 'micro', 0],[33.0, 154, 'micro', 0]

NaInSe2
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126547, 126550)
The calculatedthermoelectric power factors at 1000 K for NaInS2 and NaInSe2 along a-axis arefound to be 151.5 micro Watt /cmK2 and 154 micro Watt/cmK2, respectively andthe corresponding ZT values are 0.70.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1000, 'K', 0],[16.0, 151.5, 'micro', 0],[26.0, 154, 'micro', 0]

K2
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126572, 126573)
The calculatedthermoelectric power factors at 1000 K for NaInS2 and NaInSe2 along a-axis arefound to be 151.5 micro Watt /cmK2 and 154 micro Watt/cmK2, respectively andthe corresponding ZT values are 0.70.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1000, 'K', 0],[6.0, 151.5, 'micro', 0],[3.0, 154, 'micro', 0]

K2
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126581, 126582)
The calculatedthermoelectric power factors at 1000 K for NaInS2 and NaInSe2 along a-axis arefound to be 151.5 micro Watt /cmK2 and 154 micro Watt/cmK2, respectively andthe corresponding ZT values are 0.70.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1000, 'K', 0],[15.0, 151.5, 'micro', 0],[5.0, 154, 'micro', 0]

W
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126632, 126632)
 The obtained thermal conductivity alonga-axis for both compounds is high (22 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1000, 'K', 1],[66.0, 151.5, 'micro', 1],[56.0, 154, 'micro', 1]

K
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126635, 126635)
 The obtained thermal conductivity alonga-axis for both compounds is high (22 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 1000, 'K', 1],[69.0, 151.5, 'micro', 1],[59.0, 154, 'micro', 1]

NaIn
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126679, 126680)
This suggests that the reductionof such high thermal conductivity is important to achieve higher ZT values ofthe NaInX<missing VAR>2(X<missing VAR>  S, Se) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 1000, 'K', 2],[113.0, 151.5, 'micro', 2],[103.0, 154, 'micro', 2]

S
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126687, 126687)
This suggests that the reductionof such high thermal conductivity is important to achieve higher ZT values ofthe NaInX<missing VAR>2(X<missing VAR>  S, Se) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 1000, 'K', 2],[121.0, 151.5, 'micro', 2],[111.0, 154, 'micro', 2]

Se
###NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties|M. M. Hossain,M. A. Hossain,S. A. Moon,M. A. Ali,M. M. Uddin,S. H. Naqib,A. K. M. A. Islam M. Nagao S. Watauchi,I. Tanaka###
(126690, 126690)
This suggests that the reductionof such high thermal conductivity is important to achieve higher ZT values ofthe NaInX<missing VAR>2(X<missing VAR>  S, Se) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 1000, 'K', 2],[124.0, 151.5, 'micro', 2],[114.0, 154, 'micro', 2]

ZnS2
###Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides: ZnS2, CdS2 and CdSe2|Tiantian Jia,Jesús Carrete,Georg K. H. Madsen,Yongsheng Zhang,Suhuai Wei###
(126728, 126730)
Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides ZnS2, CdS2 and CdSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS2
###Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides: ZnS2, CdS2 and CdSe2|Tiantian Jia,Jesús Carrete,Georg K. H. Madsen,Yongsheng Zhang,Suhuai Wei###
(126733, 126735)
Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides ZnS2, CdS2 and CdSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdSe2
###Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides: ZnS2, CdS2 and CdSe2|Tiantian Jia,Jesús Carrete,Georg K. H. Madsen,Yongsheng Zhang,Suhuai Wei###
(126739, 126741)
Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides ZnS2, CdS2 and CdSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IIB
###Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides: ZnS2, CdS2 and CdSe2|Tiantian Jia,Jesús Carrete,Georg K. H. Madsen,Yongsheng Zhang,Suhuai Wei###
(126760, 126762)
 The thermoelectric properties of the three pyrite-type IIB-VIA2dichalcogenides (ZnS2, CdS2 and CdSe2) are systematically investigated andcompared with those of the prototype ZnSe2 in order to optimize theirthermoelectric properties.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides: ZnS2, CdS2 and CdSe2|Tiantian Jia,Jesús Carrete,Georg K. H. Madsen,Yongsheng Zhang,Suhuai Wei###
(126764, 126765)
 The thermoelectric properties of the three pyrite-type IIB-VIA2dichalcogenides (ZnS2, CdS2 and CdSe2) are systematically investigated andcompared with those of the prototype ZnSe2 in order to optimize theirthermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnS2
###Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides: ZnS2, CdS2 and CdSe2|Tiantian Jia,Jesús Carrete,Georg K. H. Madsen,Yongsheng Zhang,Suhuai Wei###
(126773, 126775)
 The thermoelectric properties of the three pyrite-type IIB-VIA2dichalcogenides (ZnS2, CdS2 and CdSe2) are systematically investigated andcompared with those of the prototype ZnSe2 in order to optimize theirthermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS2
###Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides: ZnS2, CdS2 and CdSe2|Tiantian Jia,Jesús Carrete,Georg K. H. Madsen,Yongsheng Zhang,Suhuai Wei###
(126778, 126780)
 The thermoelectric properties of the three pyrite-type IIB-VIA2dichalcogenides (ZnS2, CdS2 and CdSe2) are systematically investigated andcompared with those of the prototype ZnSe2 in order to optimize theirthermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se2
###Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides: ZnS2, CdS2 and CdSe2|Tiantian Jia,Jesús Carrete,Georg K. H. Madsen,Yongsheng Zhang,Suhuai Wei###
(126785, 126786)
 The thermoelectric properties of the three pyrite-type IIB-VIA2dichalcogenides (ZnS2, CdS2 and CdSe2) are systematically investigated andcompared with those of the prototype ZnSe2 in order to optimize theirthermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnSe2
###Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides: ZnS2, CdS2 and CdSe2|Tiantian Jia,Jesús Carrete,Georg K. H. Madsen,Yongsheng Zhang,Suhuai Wei###
(126810, 126812)
 The thermoelectric properties of the three pyrite-type IIB-VIA2dichalcogenides (ZnS2, CdS2 and CdSe2) are systematically investigated andcompared with those of the prototype ZnSe2 in order to optimize theirthermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Influence of thermal environment on optimal working conditions of thermoelectric generators|Y. Apertet,H. Ouerdane,C. Goupil,Ph. Lecoeur###
(127507, 127507)
 In this article, we lift all source of confusion by correctlyposing the problem and solving it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnV2O4
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(127793, 127797)
Investigation of the Thermoelectric Properties of ZnV2O4 Compound in High Temperature Region.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(127810, 127810)
 In the present work, we report the experimental thermopower (alpha) datafor ZnV2O4 compound in the high temperature range 300-600 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnV2O4
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(127838, 127842)
 In the present work, we report the experimental thermopower (alpha) datafor ZnV2O4 compound in the high temperature range 300-600 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(127860, 127860)
 In the present work, we report the experimental thermopower (alpha) datafor ZnV2O4 compound in the high temperature range 300-600 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V/K
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(127889, 127891)
 Thevalue of alpha is found to be sim184 and sim126 muV/K at sim300and sim600 K, respectively.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

K
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(127904, 127904)
 Thevalue of alpha is found to be sim184 and sim126 muV/K at sim300and sim600 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(128029, 128029)
 Within the local spin density approximation plus Hubbard U, theanti-ferromagnetic ground state calculation gives an energy gap sim0.33 e<missing VAR>Vfor U3.7 e<missing VAR>V, which is in accordance with the experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(128057, 128057)
 Within the local spin density approximation plus Hubbard U, theanti-ferromagnetic ground state calculation gives an energy gap sim0.33 e<missing VAR>Vfor U3.7 e<missing VAR>V, which is in accordance with the experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U3.7
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(128062, 128063)
 Within the local spin density approximation plus Hubbard U, theanti-ferromagnetic ground state calculation gives an energy gap sim0.33 e<missing VAR>Vfor U3.7 e<missing VAR>V, which is in accordance with the experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(128066, 128066)
 Within the local spin density approximation plus Hubbard U, theanti-ferromagnetic ground state calculation gives an energy gap sim0.33 e<missing VAR>Vfor U3.7 e<missing VAR>V, which is in accordance with the experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(128207, 128207)
 There is reasonably good matching between calculated and experimentalalpha data in the temperature range 300-410 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnV2O4
###Investigation of the Thermoelectric Properties of ZnV$_{2}$O$_{4}$ Compound in High Temperature Region|Saurabh Singh,R. K. Maurya,Sudhir K. Pandey###
(128295, 128299)
 The estimatedvalue of textitfigure-of-merit, ZT, at different absolute temperaturesuggest that ZnV2O4 compound can be a good thermoelectric material inhigh temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSb2
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128347, 128349)
Enhancement of the thermoelectric properties in doped FeSb2 bulk crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 5, '%', 3],[165.0, 8, 'W', 3],[211.0, 20, '%', 4]

FeSb2
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128360, 128362)
 Kondo insulator FeSb2 with large Seebeck coefficient would have potentialin thermoelectric applications in cryogenic temperature range if it had notbeen for large thermal conductivity kappa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 5, '%', 2],[152.0, 8, 'W', 2],[198.0, 20, '%', 3]

Fe
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128436, 128436)
 Here we studied the influence ofdifferent chemical substitutions at Fe and Sb site on thermal conductivity andthermoelectric effect in high quality single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 5, '%', 1],[78.0, 8, 'W', 1],[124.0, 20, '%', 2]

Sb
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128440, 128440)
 Here we studied the influence ofdifferent chemical substitutions at Fe and Sb site on thermal conductivity andthermoelectric effect in high quality single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 5, '%', 1],[74.0, 8, 'W', 1],[120.0, 20, '%', 2]

At
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128468, 128468)
 At 5% of Te doping atSb site thermal conductivity is suppressed from sim 250 W/Km in undopedsample to about 8 W/Km.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 5, '%', 0],[46.0, 8, 'W', 0],[92.0, 20, '%', 1]

Te
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128475, 128475)
 At 5% of Te doping atSb site thermal conductivity is suppressed from sim 250 W/Km in undopedsample to about 8 W/Km.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 5, '%', 0],[39.0, 8, 'W', 0],[85.0, 20, '%', 1]

Sb
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128482, 128482)
 At 5% of Te doping atSb site thermal conductivity is suppressed from sim 250 W/Km in undopedsample to about 8 W/Km.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 5, '%', 0],[32.0, 8, 'W', 0],[78.0, 20, '%', 1]

W
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128500, 128500)
 At 5% of Te doping atSb site thermal conductivity is suppressed from sim 250 W/Km in undopedsample to about 8 W/Km.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 5, '%', 0],[14.0, 8, 'W', 0],[60.0, 20, '%', 1]

Cr
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128522, 128522)
 However, Cr and Co doping at Fe site suppresses thermalconductivity more slowly than Te doping, and even at 20% Cr/Co doping thethermal conductivity remains sim 30 W/Km.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 5, '%', 1],[8.0, 8, 'W', 1],[38.0, 20, '%', 0]

Co
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128526, 128526)
 However, Cr and Co doping at Fe site suppresses thermalconductivity more slowly than Te doping, and even at 20% Cr/Co doping thethermal conductivity remains sim 30 W/Km.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 5, '%', 1],[12.0, 8, 'W', 1],[34.0, 20, '%', 0]

Fe
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128532, 128532)
 However, Cr and Co doping at Fe site suppresses thermalconductivity more slowly than Te doping, and even at 20% Cr/Co doping thethermal conductivity remains sim 30 W/Km.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 5, '%', 1],[18.0, 8, 'W', 1],[28.0, 20, '%', 0]

Te
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128549, 128549)
 However, Cr and Co doping at Fe site suppresses thermalconductivity more slowly than Te doping, and even at 20% Cr/Co doping thethermal conductivity remains sim 30 W/Km.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 5, '%', 1],[35.0, 8, 'W', 1],[11.0, 20, '%', 0]

Cr/Co
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128563, 128565)
 However, Cr and Co doping at Fe site suppresses thermalconductivity more slowly than Te doping, and even at 20% Cr/Co doping thethermal conductivity remains sim 30 W/Km.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[93.0, 5, '%', 1],[49.0, 8, 'W', 1],[3.0, 20, '%', 0]

W
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128582, 128582)
 However, Cr and Co doping at Fe site suppresses thermalconductivity more slowly than Te doping, and even at 20% Cr/Co doping thethermal conductivity remains sim 30 W/Km.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 5, '%', 1],[68.0, 8, 'W', 1],[22.0, 20, '%', 0]

Te
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128621, 128621)
 The analysis of differentcontributions to phonon scattering indicates that the giant suppression ofkappa with Te is due to the enhanced point defect scattering originatingfrom the strain field fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 5, '%', 2],[107.0, 8, 'W', 2],[61.0, 20, '%', 1]

In
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128653, 128653)
 In contrast, Te-doping has small influenceon the correlation effects and then for small Te substitution the largemagnitude of the Seebeck coefficient is still preserved, leading to theenhanced thermoelectric figure of merit (ZTsim 0.05 at sim 100 K) inFe(Sb0.9Te0.1)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 5, '%', 3],[139.0, 8, 'W', 3],[93.0, 20, '%', 2]

Te
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128658, 128658)
 In contrast, Te-doping has small influenceon the correlation effects and then for small Te substitution the largemagnitude of the Seebeck coefficient is still preserved, leading to theenhanced thermoelectric figure of merit (ZTsim 0.05 at sim 100 K) inFe(Sb0.9Te0.1)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 5, '%', 3],[144.0, 8, 'W', 3],[98.0, 20, '%', 2]

Te
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128685, 128685)
 In contrast, Te-doping has small influenceon the correlation effects and then for small Te substitution the largemagnitude of the Seebeck coefficient is still preserved, leading to theenhanced thermoelectric figure of merit (ZTsim 0.05 at sim 100 K) inFe(Sb0.9Te0.1)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 5, '%', 3],[171.0, 8, 'W', 3],[125.0, 20, '%', 2]

K
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128741, 128741)
 In contrast, Te-doping has small influenceon the correlation effects and then for small Te substitution the largemagnitude of the Seebeck coefficient is still preserved, leading to theenhanced thermoelectric figure of merit (ZTsim 0.05 at sim 100 K) inFe(Sb0.9Te0.1)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 5, '%', 3],[227.0, 8, 'W', 3],[181.0, 20, '%', 2]

Fe(Sb0.9Te0.1)2
###Enhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals|Kefeng Wang,Rongwei Hu,John Warren,C. Petrovic###
(128747, 128754)
 In contrast, Te-doping has small influenceon the correlation effects and then for small Te substitution the largemagnitude of the Seebeck coefficient is still preserved, leading to theenhanced thermoelectric figure of merit (ZTsim 0.05 at sim 100 K) inFe(Sb0.9Te0.1)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0.06666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 5, '%', 3],[233.0, 8, 'W', 3],[187.0, 20, '%', 2]

Cs2InAgCl6
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(128785, 128790)
High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 3.67, 'eV', 3],[126.0, 3.3, 'eV', 3],[144.0, 1.483, 'eV', 3],[347.0, 300, 'K', 9],[381.0, -2, ',', 9],[413.0, 0.71, 'and', 9],[433.0, 700, 'K', 10]

Cs2InAgCl6
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(128820, 128825)
 The elastic, electronic and thermoelectric properties of indium-baseddouble-perovskite halide, Cs2InAgCl6 have been studied by first principlesstudy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 3.67, 'eV', 2],[91.0, 3.3, 'eV', 2],[109.0, 1.483, 'eV', 2],[312.0, 300, 'K', 8],[346.0, -2, ',', 8],[378.0, 0.71, 'and', 8],[398.0, 700, 'K', 9]

Cs2InAgCl6
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(128845, 128850)
 The Cs2InAgCl6 is found to be elastically stable, ductile, anisotropicand relatively low hard material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 3.67, 'eV', 1],[66.0, 3.3, 'eV', 1],[84.0, 1.483, 'eV', 1],[287.0, 300, 'K', 7],[321.0, -2, ',', 7],[353.0, 0.71, 'and', 7],[373.0, 700, 'K', 8]

B
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(128895, 128895)
 The calculated direct bandgap 3.67 eV byT<missing VAR>B-mBJ functional fairly agrees with the experimentally measured value 3.3 eVbut PBE<missing VAR> functional underestimates the bandgap by 1.483 eV.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3.67, 'eV', 0],[21.0, 3.3, 'eV', 0],[39.0, 1.483, 'eV', 0],[242.0, 300, 'K', 6],[276.0, -2, ',', 6],[308.0, 0.71, 'and', 6],[328.0, 700, 'K', 7]

PB
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(128921, 128922)
 The calculated direct bandgap 3.67 eV byT<missing VAR>B-mBJ functional fairly agrees with the experimentally measured value 3.3 eVbut PBE<missing VAR> functional underestimates the bandgap by 1.483 eV.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 3.67, 'eV', 0],[5.0, 3.3, 'eV', 0],[12.0, 1.483, 'eV', 0],[215.0, 300, 'K', 6],[249.0, -2, ',', 6],[281.0, 0.71, 'and', 6],[301.0, 700, 'K', 7]

K
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(129011, 129011)
 The lattice thermalconductivity (kappal) is quite low (0.2 Wm-1K-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 3.67, 'eV', 2],[95.0, 3.3, 'eV', 2],[77.0, 1.483, 'eV', 2],[126.0, 300, 'K', 4],[160.0, -2, ',', 4],[192.0, 0.71, 'and', 4],[212.0, 700, 'K', 5]

VK
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(129087, 129088)
 The room temperatureSeebeck coefficient is 199 muVK-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 3.67, 'eV', 4],[171.0, 3.3, 'eV', 4],[153.0, 1.483, 'eV', 4],[49.0, 300, 'K', 2],[83.0, -2, ',', 2],[115.0, 0.71, 'and', 2],[135.0, 700, 'K', 3]

PB
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(129143, 129144)
 We obtain powerfactors at 300K by using PBE<missing VAR> and T<missing VAR>B-mBJ potentials are 29 and 31 m<missing VAR>Wm-1K-2,respectively and the corresponding thermoelectric figure of merit of Cs2BiAgCl6are 0.71 and 0.72.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 3.67, 'eV', 6],[227.0, 3.3, 'eV', 6],[209.0, 1.483, 'eV', 6],[6.0, 300, 'K', 0],[27.0, -2, ',', 0],[59.0, 0.71, 'and', 0],[79.0, 700, 'K', 1]

B
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(129150, 129150)
 We obtain powerfactors at 300K by using PBE<missing VAR> and T<missing VAR>B-mBJ potentials are 29 and 31 m<missing VAR>Wm-1K-2,respectively and the corresponding thermoelectric figure of merit of Cs2BiAgCl6are 0.71 and 0.72.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 3.67, 'eV', 6],[234.0, 3.3, 'eV', 6],[216.0, 1.483, 'eV', 6],[13.0, 300, 'K', 0],[21.0, -2, ',', 0],[53.0, 0.71, 'and', 0],[73.0, 700, 'K', 1]

K
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(129170, 129170)
 We obtain powerfactors at 300K by using PBE<missing VAR> and T<missing VAR>B-mBJ potentials are 29 and 31 m<missing VAR>Wm-1K-2,respectively and the corresponding thermoelectric figure of merit of Cs2BiAgCl6are 0.71 and 0.72.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 3.67, 'eV', 6],[254.0, 3.3, 'eV', 6],[236.0, 1.483, 'eV', 6],[33.0, 300, 'K', 0],[1.0, -2, ',', 0],[33.0, 0.71, 'and', 0],[53.0, 700, 'K', 1]

Cs2BiAgCl6
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(129194, 129199)
 We obtain powerfactors at 300K by using PBE<missing VAR> and T<missing VAR>B-mBJ potentials are 29 and 31 m<missing VAR>Wm-1K-2,respectively and the corresponding thermoelectric figure of merit of Cs2BiAgCl6are 0.71 and 0.72.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 3.67, 'eV', 6],[278.0, 3.3, 'eV', 6],[260.0, 1.483, 'eV', 6],[57.0, 300, 'K', 0],[23.0, -2, ',', 0],[4.0, 0.71, 'and', 0],[24.0, 700, 'K', 1]

B
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(129233, 129233)
 However, the maximum ZT value obtained at 700K is 0.74 byT<missing VAR>B-mBJ potential.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 3.67, 'eV', 7],[317.0, 3.3, 'eV', 7],[299.0, 1.483, 'eV', 7],[96.0, 300, 'K', 1],[62.0, -2, ',', 1],[30.0, 0.71, 'and', 1],[10.0, 700, 'K', 0]

Cs2InAgCl6
###High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6|Enamul Haque,M. Anwar Hossain###
(129252, 129257)
 The obtained results implies that Cs2InAgCl6 is a promisingmaterial for thermoelectric device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 3.67, 'eV', 8],[336.0, 3.3, 'eV', 8],[318.0, 1.483, 'eV', 8],[115.0, 300, 'K', 2],[81.0, -2, ',', 2],[49.0, 0.71, 'and', 2],[29.0, 700, 'K', 1]

S
###Spin caloritronics with superconductors: Enhanced thermoelectric effects, generalized Onsager response-matrix, and thermal spin currents|Jacob Linder,Marianne Etzelmüller Bathen###
(129445, 129445)
 Here, wetheoretically show that quasiparticle tunneling between two spin-splitsuperconductors enhances the thermoelectric response manyfold compared to whenonly one such superconductor is used, generating Seebeck coefficients(mathcalS > 1 m<missing VAR>V/K) and figures of merit (ZT simeq 40) far exceedingthe best bulk thermoelectric materials, and also becomes more resilient towardinelastic scattering processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Spin caloritronics with superconductors: Enhanced thermoelectric effects, generalized Onsager response-matrix, and thermal spin currents|Jacob Linder,Marianne Etzelmüller Bathen###
(129454, 129454)
 Here, wetheoretically show that quasiparticle tunneling between two spin-splitsuperconductors enhances the thermoelectric response manyfold compared to whenonly one such superconductor is used, generating Seebeck coefficients(mathcalS > 1 m<missing VAR>V/K) and figures of merit (ZT simeq 40) far exceedingthe best bulk thermoelectric materials, and also becomes more resilient towardinelastic scattering processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Interference enhanced thermoelectricity in quinoid type structures|M. Strange,J. S. Seldenthuis,C. J. O. Verzijl,J. M. Thijssen,G. C. Solomon###
(129728, 129728)
 Quantum interference (Q<missing VAR>I) effects in molecular junctions may be used toobtain large thermoelectric responses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Interference enhanced thermoelectricity in quinoid type structures|M. Strange,J. S. Seldenthuis,C. J. O. Verzijl,J. M. Thijssen,G. C. Solomon###
(129860, 129860)
 We study the electrical conductance G<missing VAR>and the thermoelec- tric response of a series of molecules featuring a quinoidcore using density functional theory (DFT), as well as a semi-empiricalinteracting model Hamiltonian describing the pi-system of the molecule whichwe treat in the G<missing VAR>W approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Interference enhanced thermoelectricity in quinoid type structures|M. Strange,J. S. Seldenthuis,C. J. O. Verzijl,J. M. Thijssen,G. C. Solomon###
(129893, 129893)
 Molecules with a quinoid type structure areshown to have two distinct destructive Q<missing VAR>I features close to the frontierorbital energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S2
###Interference enhanced thermoelectricity in quinoid type structures|M. Strange,J. S. Seldenthuis,C. J. O. Verzijl,J. M. Thijssen,G. C. Solomon###
(130072, 130073)
 This feature results in a very highthermoelectric power factor S2G<missing VAR> and figure of merit ZT, where S is the Seebeckcoefficient, making quinoid type molecules potential candidates for efficientthermoelectric devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Interference enhanced thermoelectricity in quinoid type structures|M. Strange,J. S. Seldenthuis,C. J. O. Verzijl,J. M. Thijssen,G. C. Solomon###
(130090, 130090)
 This feature results in a very highthermoelectric power factor S2G<missing VAR> and figure of merit ZT, where S is the Seebeckcoefficient, making quinoid type molecules potential candidates for efficientthermoelectric devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130145, 130145)
Significant ZT Enhancement in p<missing VAR>-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 58, ',', 3],[336.0, 1, 'atomic', 6],[347.0, 450, 'percent', 6]

Co
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130147, 130147)
Significant ZT Enhancement in p<missing VAR>-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 58, ',', 3],[334.0, 1, 'atomic', 6],[345.0, 450, 'percent', 6]

Fe
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130149, 130149)
Significant ZT Enhancement in p<missing VAR>-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 58, ',', 3],[332.0, 1, 'atomic', 6],[343.0, 450, 'percent', 6]

Sb
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130151, 130151)
Significant ZT Enhancement in p<missing VAR>-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 58, ',', 3],[330.0, 1, 'atomic', 6],[341.0, 450, 'percent', 6]

InSb
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130153, 130154)
Significant ZT Enhancement in p<missing VAR>-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 58, ',', 3],[327.0, 1, 'atomic', 6],[338.0, 450, 'percent', 6]

InSb
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130195, 130196)
 It has been demonstrated that InSb nanoinclusions, which are formed in situ,can simultaneously improve all three individual thermoelectric properties ofthe n<missing VAR>-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 58, ',', 2],[285.0, 1, 'atomic', 5],[296.0, 450, 'percent', 5]

Ti
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130245, 130245)
 It has been demonstrated that InSb nanoinclusions, which are formed in situ,can simultaneously improve all three individual thermoelectric properties ofthe n<missing VAR>-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 58, ',', 2],[236.0, 1, 'atomic', 5],[247.0, 450, 'percent', 5]

Zr
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130247, 130247)
 It has been demonstrated that InSb nanoinclusions, which are formed in situ,can simultaneously improve all three individual thermoelectric properties ofthe n<missing VAR>-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 58, ',', 2],[234.0, 1, 'atomic', 5],[245.0, 450, 'percent', 5]

Hf
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130249, 130249)
 It has been demonstrated that InSb nanoinclusions, which are formed in situ,can simultaneously improve all three individual thermoelectric properties ofthe n<missing VAR>-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 58, ',', 2],[232.0, 1, 'atomic', 5],[243.0, 450, 'percent', 5]

Co
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130252, 130252)
 It has been demonstrated that InSb nanoinclusions, which are formed in situ,can simultaneously improve all three individual thermoelectric properties ofthe n<missing VAR>-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 58, ',', 2],[229.0, 1, 'atomic', 5],[240.0, 450, 'percent', 5]

Ni
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130254, 130254)
 It has been demonstrated that InSb nanoinclusions, which are formed in situ,can simultaneously improve all three individual thermoelectric properties ofthe n<missing VAR>-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 58, ',', 2],[227.0, 1, 'atomic', 5],[238.0, 450, 'percent', 5]

Sb
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130256, 130256)
 It has been demonstrated that InSb nanoinclusions, which are formed in situ,can simultaneously improve all three individual thermoelectric properties ofthe n<missing VAR>-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 58, ',', 2],[225.0, 1, 'atomic', 5],[236.0, 450, 'percent', 5]

In
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130284, 130284)
 In the work presented herein, we have adopted the sameapproach to the p<missing VAR>-type half Heusler compound Ti(Co,Fe)Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 58, ',', 1],[197.0, 1, 'atomic', 2],[208.0, 450, 'percent', 2]

Ti
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130322, 130322)
 In the work presented herein, we have adopted the sameapproach to the p<missing VAR>-type half Heusler compound Ti(Co,Fe)Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 58, ',', 1],[159.0, 1, 'atomic', 2],[170.0, 450, 'percent', 2]

Co
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130324, 130324)
 In the work presented herein, we have adopted the sameapproach to the p<missing VAR>-type half Heusler compound Ti(Co,Fe)Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 58, ',', 1],[157.0, 1, 'atomic', 2],[168.0, 450, 'percent', 2]

Fe
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130326, 130326)
 In the work presented herein, we have adopted the sameapproach to the p<missing VAR>-type half Heusler compound Ti(Co,Fe)Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 58, ',', 1],[155.0, 1, 'atomic', 2],[166.0, 450, 'percent', 2]

Sb
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130328, 130328)
 In the work presented herein, we have adopted the sameapproach to the p<missing VAR>-type half Heusler compound Ti(Co,Fe)Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 58, ',', 1],[153.0, 1, 'atomic', 2],[164.0, 450, 'percent', 2]

K
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130472, 130472)
 A figure of merit of ZT0.33 was attained at 900K for the sample containing 1 atomic percent InSb nanoinclusions, a 450 percentimprovement over the nanoinclusion-free sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 58, ',', 3],[9.0, 1, 'atomic', 0],[20.0, 450, 'percent', 0]

InSb
###Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach|Wenjie Xie,Yonggao Yana,Song Zhuc,Menghan Zhouc,Sascha Populohb,Krzysztof Gałązkab,S. Joseph Poon,Anke Weidenkaff,Jian He,Xinfeng Tanga,Terry M. Tritt###
(130485, 130486)
 A figure of merit of ZT0.33 was attained at 900K for the sample containing 1 atomic percent InSb nanoinclusions, a 450 percentimprovement over the nanoinclusion-free sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 58, ',', 3],[4.0, 1, 'atomic', 0],[6.0, 450, 'percent', 0]

In
###Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires|Neophytos Neophytou,Hans Kosina###
(130722, 130722)
 Inthis work the atomistic sp3d5s-spin-orbit-coupled tight-binding model and thelinearized Boltzmann transport theory is applied to calculate the roomtemperature electrical conductivity, Seebeck coefficient, and power factor ofnarrow 1D silicon nanowires (NWs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 1, 'D', 0],[128.0, 12, 'nm', 1],[134.0, 3, 'nm', 1],[215.0, 7, 'nm', 2]

N
###Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires|Neophytos Neophytou,Hans Kosina###
(130806, 130806)
 Inthis work the atomistic sp3d5s-spin-orbit-coupled tight-binding model and thelinearized Boltzmann transport theory is applied to calculate the roomtemperature electrical conductivity, Seebeck coefficient, and power factor ofnarrow 1D silicon nanowires (NWs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 1, 'D', 0],[44.0, 12, 'nm', 1],[50.0, 3, 'nm', 1],[131.0, 7, 'nm', 2]

N
###Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires|Neophytos Neophytou,Hans Kosina###
(130842, 130842)
 We present a comprehensive analysis of thethermoelectric coefficients of n<missing VAR>-type and p<missing VAR>-type NWs of diameters from 12nmdown to 3nm, in [100], [110], and [111] transport orientations at differentcarrier concentrations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1, 'D', 1],[8.0, 12, 'nm', 0],[14.0, 3, 'nm', 0],[95.0, 7, 'nm', 1]

In
###Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires|Neophytos Neophytou,Hans Kosina###
(131014, 131014)
 In general, enhancedscattering at these diameter scales strongly degrades the conductivity andpower factor of the device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 1, 'D', 4],[164.0, 12, 'nm', 3],[158.0, 3, 'nm', 3],[77.0, 7, 'nm', 2]

AlGaN/GaN
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131150, 131155)
Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[366.0, 2, 'DEG', 4],[401.0, -3, ',', 5],[423.0, 2, 'DEG', 5],[529.0, 2, 'DEG', 7]

III
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131186, 131188)
 Over the last decade, progress in wide bandgap, III-V materials systems basedon gallium nitride (GaN) has been a major driver in the realization of highpower and high frequency electronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 2, 'DEG', 3],[368.0, -3, ',', 4],[390.0, 2, 'DEG', 4],[496.0, 2, 'DEG', 6]

V
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131190, 131190)
 Over the last decade, progress in wide bandgap, III-V materials systems basedon gallium nitride (GaN) has been a major driver in the realization of highpower and high frequency electronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 2, 'DEG', 3],[366.0, -3, ',', 4],[388.0, 2, 'DEG', 4],[494.0, 2, 'DEG', 6]

(GaN)
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131205, 131208)
 Over the last decade, progress in wide bandgap, III-V materials systems basedon gallium nitride (GaN) has been a major driver in the realization of highpower and high frequency electronic devices.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 2, 'DEG', 3],[348.0, -3, ',', 4],[370.0, 2, 'DEG', 4],[476.0, 2, 'DEG', 6]

AlGaN/GaN
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131273, 131278)
 Since the highly conductive,two-dimensional electron gas (2DEG) at the AlGaN/GaN interface is based onbuilt-in polarization fields (not doping) and is confined to very smallthicknesses, its charge carriers exhibit much higher mobilities in comparisonto their doped counterparts.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[243.0, 2, 'DEG', 2],[278.0, -3, ',', 3],[300.0, 2, 'DEG', 3],[406.0, 2, 'DEG', 5]

In
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131347, 131347)
 In this study, we show that this heterostructuredmaterial also offers the unique ability to manipulate electrical transportseparately from thermal transport through the examination of fully-suspendedAlGaN/GaN diaphragms of varied GaN buffer layer thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 2, 'DEG', 1],[209.0, -3, ',', 2],[231.0, 2, 'DEG', 2],[337.0, 2, 'DEG', 4]

AlGaN/GaN
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131407, 131412)
 In this study, we show that this heterostructuredmaterial also offers the unique ability to manipulate electrical transportseparately from thermal transport through the examination of fully-suspendedAlGaN/GaN diaphragms of varied GaN buffer layer thicknesses.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[109.0, 2, 'DEG', 1],[144.0, -3, ',', 2],[166.0, 2, 'DEG', 2],[272.0, 2, 'DEG', 4]

GaN
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131420, 131421)
 In this study, we show that this heterostructuredmaterial also offers the unique ability to manipulate electrical transportseparately from thermal transport through the examination of fully-suspendedAlGaN/GaN diaphragms of varied GaN buffer layer thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'DEG', 1],[135.0, -3, ',', 2],[157.0, 2, 'DEG', 2],[263.0, 2, 'DEG', 4]

GaN
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131446, 131447)
 Notably, we showthat 100 nm thin GaN layers can considerably impede heat flow withoutelectrical transport degradation, and that a significant improvement (4x) inthe thermoelectric figure of merit (it zT) over externally doped GaN isobserved in 2DEG based heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'DEG', 0],[109.0, -3, ',', 1],[131.0, 2, 'DEG', 1],[237.0, 2, 'DEG', 3]

GaN
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131512, 131513)
 Notably, we showthat 100 nm thin GaN layers can considerably impede heat flow withoutelectrical transport degradation, and that a significant improvement (4x) inthe thermoelectric figure of merit (it zT) over externally doped GaN isobserved in 2DEG based heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'DEG', 0],[43.0, -3, ',', 1],[65.0, 2, 'DEG', 1],[171.0, 2, 'DEG', 3]

K
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131562, 131562)
 We also observe state-of-the artthermoelectric power factors (4-7times 10-3,Wm-1K-2) at roomtemperature) in the 2DEG of this material system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'DEG', 1],[6.0, -3, ',', 0],[16.0, 2, 'DEG', 0],[122.0, 2, 'DEG', 2]

III
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131688, 131690)
 These results highlight the potential for using the 2DEG in III-Vmaterials for on-chip thermal sensing and energy harvesting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2, 'DEG', 3],[132.0, -3, ',', 2],[110.0, 2, 'DEG', 2],[4.0, 2, 'DEG', 0]

V
###Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering|Ananth Saran Yalamarthy,Hongyun So,Miguel Muñoz Rojo,Ateeq J. Suria,Xiaoqing Xu,Eric Pop,Debbie G. Senesky###
(131692, 131692)
 These results highlight the potential for using the 2DEG in III-Vmaterials for on-chip thermal sensing and energy harvesting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 2, 'DEG', 3],[136.0, -3, ',', 2],[114.0, 2, 'DEG', 2],[8.0, 2, 'DEG', 0]

In
###Quantum transport simulations for the thermoelectric power factor in two dimensional nanocomposites|Samuel Foster,Mischa Thesberg,Neophytos Neophytou###
(131868, 131868)
 In this work we consider theeffect that nanoinclusions and voids have on the electronic and thermoelectriccoefficients of two dimensional geometries using the fully quantum mechanicalNon Equilibrium Greens Function method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaPd3B4O12
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132183, 132189)
An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B  Ti, V).
Featurization terminated normally.
0,0,0,0,0.2,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 4, 'd', 7],[302.0, 2, 'p', 7],[319.0, 4, 'd', 7],[324.0, 3, 'd', 7],[327.0, 2, 'p', 7],[581.0, 0.8, 'at', 12],[582.0, 800, 'K', 12]

B
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132192, 132192)
An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B  Ti, V).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 4, 'd', 7],[299.0, 2, 'p', 7],[316.0, 4, 'd', 7],[321.0, 3, 'd', 7],[324.0, 2, 'p', 7],[578.0, 0.8, 'at', 12],[579.0, 800, 'K', 12]

Ti
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132195, 132195)
An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B  Ti, V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 4, 'd', 7],[296.0, 2, 'p', 7],[313.0, 4, 'd', 7],[318.0, 3, 'd', 7],[321.0, 2, 'p', 7],[575.0, 0.8, 'at', 12],[576.0, 800, 'K', 12]

V
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132198, 132198)
An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B  Ti, V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 4, 'd', 7],[293.0, 2, 'p', 7],[310.0, 4, 'd', 7],[315.0, 3, 'd', 7],[318.0, 2, 'p', 7],[572.0, 0.8, 'at', 12],[573.0, 800, 'K', 12]

CaPd3Ti4O12
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132210, 132216)
 Numerous physical properties of CaPd3Ti4O12 (CPT<missing VAR>O) and CaPd3V4O12 (CPVO)double perovskites have been explored based on density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 4, 'd', 6],[275.0, 2, 'p', 6],[292.0, 4, 'd', 6],[297.0, 3, 'd', 6],[300.0, 2, 'p', 6],[554.0, 0.8, 'at', 11],[555.0, 800, 'K', 11]

CP
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132219, 132220)
 Numerous physical properties of CaPd3Ti4O12 (CPT<missing VAR>O) and CaPd3V4O12 (CPVO)double perovskites have been explored based on density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 4, 'd', 6],[271.0, 2, 'p', 6],[288.0, 4, 'd', 6],[293.0, 3, 'd', 6],[296.0, 2, 'p', 6],[550.0, 0.8, 'at', 11],[551.0, 800, 'K', 11]

O
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132222, 132222)
 Numerous physical properties of CaPd3Ti4O12 (CPT<missing VAR>O) and CaPd3V4O12 (CPVO)double perovskites have been explored based on density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 4, 'd', 6],[269.0, 2, 'p', 6],[286.0, 4, 'd', 6],[291.0, 3, 'd', 6],[294.0, 2, 'p', 6],[548.0, 0.8, 'at', 11],[549.0, 800, 'K', 11]

CaPd3V4O12
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132227, 132233)
 Numerous physical properties of CaPd3Ti4O12 (CPT<missing VAR>O) and CaPd3V4O12 (CPVO)double perovskites have been explored based on density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 4, 'd', 6],[258.0, 2, 'p', 6],[275.0, 4, 'd', 6],[280.0, 3, 'd', 6],[283.0, 2, 'p', 6],[537.0, 0.8, 'at', 11],[538.0, 800, 'K', 11]

(CPVO)
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132235, 132240)
 Numerous physical properties of CaPd3Ti4O12 (CPT<missing VAR>O) and CaPd3V4O12 (CPVO)double perovskites have been explored based on density functional theory (DFT).
Featurization successful!
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 4, 'd', 6],[251.0, 2, 'p', 6],[268.0, 4, 'd', 6],[273.0, 3, 'd', 6],[276.0, 2, 'p', 6],[530.0, 0.8, 'at', 11],[531.0, 800, 'K', 11]

CP
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132423, 132424)
 The electronic bandstructure of CPT<missing VAR>O and CPVO reveals the direct band gap semiconducting in natureand metallic characteristics, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 4, 'd', 1],[67.0, 2, 'p', 1],[84.0, 4, 'd', 1],[89.0, 3, 'd', 1],[92.0, 2, 'p', 1],[346.0, 0.8, 'at', 6],[347.0, 800, 'K', 6]

O
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132426, 132426)
 The electronic bandstructure of CPT<missing VAR>O and CPVO reveals the direct band gap semiconducting in natureand metallic characteristics, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 4, 'd', 1],[65.0, 2, 'p', 1],[82.0, 4, 'd', 1],[87.0, 3, 'd', 1],[90.0, 2, 'p', 1],[344.0, 0.8, 'at', 6],[345.0, 800, 'K', 6]

CPVO
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132430, 132433)
 The electronic bandstructure of CPT<missing VAR>O and CPVO reveals the direct band gap semiconducting in natureand metallic characteristics, respectively.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 4, 'd', 1],[58.0, 2, 'p', 1],[75.0, 4, 'd', 1],[80.0, 3, 'd', 1],[83.0, 2, 'p', 1],[337.0, 0.8, 'at', 6],[338.0, 800, 'K', 6]

Pd
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132485, 132485)
 The calculated partial density ofstates indicates the strong hybridization between Pd 4d and O 2p orbitalelectrons for CPT<missing VAR>O and Pd 4d and V 3d O 2p for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 4, 'd', 0],[6.0, 2, 'p', 0],[23.0, 4, 'd', 0],[28.0, 3, 'd', 0],[31.0, 2, 'p', 0],[285.0, 0.8, 'at', 5],[286.0, 800, 'K', 5]

O
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132490, 132490)
 The calculated partial density ofstates indicates the strong hybridization between Pd 4d and O 2p orbitalelectrons for CPT<missing VAR>O and Pd 4d and V 3d O 2p for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4, 'd', 0],[1.0, 2, 'p', 0],[18.0, 4, 'd', 0],[23.0, 3, 'd', 0],[26.0, 2, 'p', 0],[280.0, 0.8, 'at', 5],[281.0, 800, 'K', 5]

CP
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132500, 132501)
 The calculated partial density ofstates indicates the strong hybridization between Pd 4d and O 2p orbitalelectrons for CPT<missing VAR>O and Pd 4d and V 3d O 2p for CPVO.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 4, 'd', 0],[9.0, 2, 'p', 0],[7.0, 4, 'd', 0],[12.0, 3, 'd', 0],[15.0, 2, 'p', 0],[269.0, 0.8, 'at', 5],[270.0, 800, 'K', 5]

O
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132503, 132503)
 The calculated partial density ofstates indicates the strong hybridization between Pd 4d and O 2p orbitalelectrons for CPT<missing VAR>O and Pd 4d and V 3d O 2p for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 4, 'd', 0],[12.0, 2, 'p', 0],[5.0, 4, 'd', 0],[10.0, 3, 'd', 0],[13.0, 2, 'p', 0],[267.0, 0.8, 'at', 5],[268.0, 800, 'K', 5]

Pd
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132507, 132507)
 The calculated partial density ofstates indicates the strong hybridization between Pd 4d and O 2p orbitalelectrons for CPT<missing VAR>O and Pd 4d and V 3d O 2p for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 4, 'd', 0],[16.0, 2, 'p', 0],[1.0, 4, 'd', 0],[6.0, 3, 'd', 0],[9.0, 2, 'p', 0],[263.0, 0.8, 'at', 5],[264.0, 800, 'K', 5]

V
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132512, 132512)
 The calculated partial density ofstates indicates the strong hybridization between Pd 4d and O 2p orbitalelectrons for CPT<missing VAR>O and Pd 4d and V 3d O 2p for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 4, 'd', 0],[21.0, 2, 'p', 0],[4.0, 4, 'd', 0],[1.0, 3, 'd', 0],[4.0, 2, 'p', 0],[258.0, 0.8, 'at', 5],[259.0, 800, 'K', 5]

O
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132515, 132515)
 The calculated partial density ofstates indicates the strong hybridization between Pd 4d and O 2p orbitalelectrons for CPT<missing VAR>O and Pd 4d and V 3d O 2p for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 4, 'd', 0],[24.0, 2, 'p', 0],[7.0, 4, 'd', 0],[2.0, 3, 'd', 0],[1.0, 2, 'p', 0],[255.0, 0.8, 'at', 5],[256.0, 800, 'K', 5]

CPVO
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132520, 132523)
 The calculated partial density ofstates indicates the strong hybridization between Pd 4d and O 2p orbitalelectrons for CPT<missing VAR>O and Pd 4d and V 3d O 2p for CPVO.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 4, 'd', 0],[29.0, 2, 'p', 0],[12.0, 4, 'd', 0],[7.0, 3, 'd', 0],[4.0, 2, 'p', 0],[247.0, 0.8, 'at', 5],[248.0, 800, 'K', 5]

CPVO
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132576, 132579)
 Fermi surface calculation of CPVO ensures bothelectron and hole like surfaces indicating the multiple band nature.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 4, 'd', 2],[85.0, 2, 'p', 2],[68.0, 4, 'd', 2],[63.0, 3, 'd', 2],[60.0, 2, 'p', 2],[191.0, 0.8, 'at', 3],[192.0, 800, 'K', 3]

In
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132607, 132607)
 In themidst of optical properties, photoconductivity and absorption coefficient ofboth compounds reveal well qualitative compliance with consequences of bandstructure computations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 4, 'd', 3],[116.0, 2, 'p', 3],[99.0, 4, 'd', 3],[94.0, 3, 'd', 3],[91.0, 2, 'p', 3],[163.0, 0.8, 'at', 2],[164.0, 800, 'K', 2]

CP
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132711, 132712)
 The studied thermoelectric transport properties ofCPT<missing VAR>O yielded the Seebeck coefficient (186 microVK-1), power factor (11.9microWcm-1K-2) and figure of merit (ZT) value of about 0.8 at 800 K indicatethat this material could be a promising candidate for thermoelectric deviceapplication.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 4, 'd', 5],[220.0, 2, 'p', 5],[203.0, 4, 'd', 5],[198.0, 3, 'd', 5],[195.0, 2, 'p', 5],[58.0, 0.8, 'at', 0],[59.0, 800, 'K', 0]

O
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132714, 132714)
 The studied thermoelectric transport properties ofCPT<missing VAR>O yielded the Seebeck coefficient (186 microVK-1), power factor (11.9microWcm-1K-2) and figure of merit (ZT) value of about 0.8 at 800 K indicatethat this material could be a promising candidate for thermoelectric deviceapplication.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 4, 'd', 5],[223.0, 2, 'p', 5],[206.0, 4, 'd', 5],[201.0, 3, 'd', 5],[198.0, 2, 'p', 5],[56.0, 0.8, 'at', 0],[57.0, 800, 'K', 0]

VK
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132728, 132729)
 The studied thermoelectric transport properties ofCPT<missing VAR>O yielded the Seebeck coefficient (186 microVK-1), power factor (11.9microWcm-1K-2) and figure of merit (ZT) value of about 0.8 at 800 K indicatethat this material could be a promising candidate for thermoelectric deviceapplication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 4, 'd', 5],[237.0, 2, 'p', 5],[220.0, 4, 'd', 5],[215.0, 3, 'd', 5],[212.0, 2, 'p', 5],[41.0, 0.8, 'at', 0],[42.0, 800, 'K', 0]

K
###An ab-initio study on physical properties of Pd2+ incorporated double perovskites CaPd3B4O12 (B = Ti, V)|Mirza H. K. Rubel,Khandaker Monower Hossain,Anjuman Ara Khatun,M. Anwar Hossain,M. M. Rahaman,M. Mozahar Ali,M. M. Hossain,J. Hossain,Md. Rasadujjaman,S. Kojima,N. Kumada###
(132747, 132747)
 The studied thermoelectric transport properties ofCPT<missing VAR>O yielded the Seebeck coefficient (186 microVK-1), power factor (11.9microWcm-1K-2) and figure of merit (ZT) value of about 0.8 at 800 K indicatethat this material could be a promising candidate for thermoelectric deviceapplication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 4, 'd', 5],[256.0, 2, 'p', 5],[239.0, 4, 'd', 5],[234.0, 3, 'd', 5],[231.0, 2, 'p', 5],[23.0, 0.8, 'at', 0],[24.0, 800, 'K', 0]

H
###Optical excitations and thermoelectric properties of 2D holey graphene|Deobrat Singh,Vivekanand Shukla,Rajeev Ahuja###
(132836, 132836)
 Recently, holey graphene (HG) has successfully synthesized at atomicprecision of hole size and shape.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'D', 1],[163.0, 0.65, 'eV', 4],[173.0, 0.95, 'eV', 4],[281.0, 1.28, 'eV', 6],[297.0, 80, 'meV', 6],[344.0, 1.13, 'from', 7]

H
###Optical excitations and thermoelectric properties of 2D holey graphene|Deobrat Singh,Vivekanand Shukla,Rajeev Ahuja###
(132963, 132963)
 We systematically investigatedthe structural, electronic, optical and thermoelectric properties of HG<missing VAR>structure using first-principles calculations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2, 'D', 4],[36.0, 0.65, 'eV', 1],[46.0, 0.95, 'eV', 1],[154.0, 1.28, 'eV', 3],[170.0, 80, 'meV', 3],[217.0, 1.13, 'from', 4]

H
###Optical excitations and thermoelectric properties of 2D holey graphene|Deobrat Singh,Vivekanand Shukla,Rajeev Ahuja###
(132978, 132978)
 HG<missing VAR> was found to have a directband gap with 0.65 eV (PBE<missing VAR> functional), 0.95 eV (HSE<missing VAR>06 functional) and HSE<missing VAR>06functional is in good agreement with experimental results.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 2, 'D', 5],[21.0, 0.65, 'eV', 0],[31.0, 0.95, 'eV', 0],[139.0, 1.28, 'eV', 2],[155.0, 80, 'meV', 2],[202.0, 1.13, 'from', 3]

PB
###Optical excitations and thermoelectric properties of 2D holey graphene|Deobrat Singh,Vivekanand Shukla,Rajeev Ahuja###
(133002, 133003)
 HG<missing VAR> was found to have a directband gap with 0.65 eV (PBE<missing VAR> functional), 0.95 eV (HSE<missing VAR>06 functional) and HSE<missing VAR>06functional is in good agreement with experimental results.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2, 'D', 5],[3.0, 0.65, 'eV', 0],[6.0, 0.95, 'eV', 0],[114.0, 1.28, 'eV', 2],[130.0, 80, 'meV', 2],[177.0, 1.13, 'from', 3]

HS
###Optical excitations and thermoelectric properties of 2D holey graphene|Deobrat Singh,Vivekanand Shukla,Rajeev Ahuja###
(133012, 133013)
 HG<missing VAR> was found to have a directband gap with 0.65 eV (PBE<missing VAR> functional), 0.95 eV (HSE<missing VAR>06 functional) and HSE<missing VAR>06functional is in good agreement with experimental results.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 2, 'D', 5],[13.0, 0.65, 'eV', 0],[3.0, 0.95, 'eV', 0],[104.0, 1.28, 'eV', 2],[120.0, 80, 'meV', 2],[167.0, 1.13, 'from', 3]

HS
###Optical excitations and thermoelectric properties of 2D holey graphene|Deobrat Singh,Vivekanand Shukla,Rajeev Ahuja###
(133022, 133023)
 HG<missing VAR> was found to have a directband gap with 0.65 eV (PBE<missing VAR> functional), 0.95 eV (HSE<missing VAR>06 functional) and HSE<missing VAR>06functional is in good agreement with experimental results.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 2, 'D', 5],[23.0, 0.65, 'eV', 0],[13.0, 0.95, 'eV', 0],[94.0, 1.28, 'eV', 2],[110.0, 80, 'meV', 2],[157.0, 1.13, 'from', 3]

W0
###Optical excitations and thermoelectric properties of 2D holey graphene|Deobrat Singh,Vivekanand Shukla,Rajeev Ahuja###
(133065, 133066)
 For the opticalproperties, we use single-shot G<missing VAR>0W0 calculations by solving the Bethe-Salpeterequation to determining the intralayer excitonic effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 2, 'D', 6],[66.0, 0.65, 'eV', 1],[56.0, 0.95, 'eV', 1],[51.0, 1.28, 'eV', 1],[67.0, 80, 'meV', 1],[114.0, 1.13, 'from', 2]

V/K
###Optical excitations and thermoelectric properties of 2D holey graphene|Deobrat Singh,Vivekanand Shukla,Rajeev Ahuja###
(133158, 133160)
 We have found the large values of thermopower of 1662.59muV/K and better electronic figure of merit, ZTe as 1.13 from theinvestigated thermoelectric properties.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[337.0, 2, 'D', 8],[159.0, 0.65, 'eV', 3],[149.0, 0.95, 'eV', 3],[41.0, 1.28, 'eV', 1],[25.0, 80, 'meV', 1],[20.0, 1.13, 'from', 0]

H
###Optical excitations and thermoelectric properties of 2D holey graphene|Deobrat Singh,Vivekanand Shukla,Rajeev Ahuja###
(133224, 133224)
 Our investigations exhibit strong andbroad optical absorption in the visible light region, which makes HG<missing VAR> monolayera promising candidate for optoelectronic and thermoelectric applications.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 2, 'D', 9],[225.0, 0.65, 'eV', 4],[215.0, 0.95, 'eV', 4],[107.0, 1.28, 'eV', 2],[91.0, 80, 'meV', 2],[44.0, 1.13, 'from', 1]

HfN2
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133285, 133287)
Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2.
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 12.59, 'pm', 5],[317.0, 0.8, 'at', 7],[318.0, 900, 'K', 7]

(HfN2)
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133305, 133309)
 Two-dimensional (2D) transition metal dinitride (HfN2) has been studied fortheir optoelectronic, piezoelectric, and thermoelectric properties.
Featurization successful!
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 12.59, 'pm', 4],[295.0, 0.8, 'at', 6],[296.0, 900, 'K', 6]

HfN2
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133346, 133348)
 Bothmonolayer and bilayer of HfN2 were studied using density functional theory(DFT) and Boltzmann transport equation (BTE).
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 12.59, 'pm', 3],[256.0, 0.8, 'at', 5],[257.0, 900, 'K', 5]

B
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133378, 133378)
 Bothmonolayer and bilayer of HfN2 were studied using density functional theory(DFT) and Boltzmann transport equation (BTE).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 12.59, 'pm', 3],[226.0, 0.8, 'at', 5],[227.0, 900, 'K', 5]

HfN2
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133390, 133392)
 The bilayer of HfN2 withdifferent stacking layers (AA and AB) showed different electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 12.59, 'pm', 2],[212.0, 0.8, 'at', 4],[213.0, 900, 'K', 4]

B
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133410, 133410)
 The bilayer of HfN2 withdifferent stacking layers (AA and AB) showed different electronic properties.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 12.59, 'pm', 2],[194.0, 0.8, 'at', 4],[195.0, 900, 'K', 4]

(UV)
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133458, 133461)
The optical property of the material suggests that it is a very good absorberin the ultraviolet (UV) region thus, can be used as a UV-photodetector and asan absorber layer in photovoltaic devices.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[98.0, 12.59, 'pm', 1],[143.0, 0.8, 'at', 3],[144.0, 900, 'K', 3]

UV
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133478, 133479)
The optical property of the material suggests that it is a very good absorberin the ultraviolet (UV) region thus, can be used as a UV-photodetector and asan absorber layer in photovoltaic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[80.0, 12.59, 'pm', 1],[125.0, 0.8, 'at', 3],[126.0, 900, 'K', 3]

C
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133554, 133554)
 The piezoelectric properties of thematerial also showed promising behavior as the piezoelectric stress and straintensors have highest value of 8.97(10)(-10) C/m<missing VAR> and 12.59 pm/V respectivelyfor the bilayer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 12.59, 'pm', 0],[50.0, 0.8, 'at', 2],[51.0, 900, 'K', 2]

V
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133561, 133561)
 The piezoelectric properties of thematerial also showed promising behavior as the piezoelectric stress and straintensors have highest value of 8.97(10)(-10) C/m<missing VAR> and 12.59 pm/V respectivelyfor the bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 12.59, 'pm', 0],[43.0, 0.8, 'at', 2],[44.0, 900, 'K', 2]

B
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133588, 133588)
 The piezoelectric tensors have highest value for AB stackedbilayer.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 12.59, 'pm', 1],[16.0, 0.8, 'at', 1],[17.0, 900, 'K', 1]

B
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133618, 133618)
 The ZT value of 0.8 at 900 K is also highest for bilayer AB stackedHfN2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 12.59, 'pm', 2],[14.0, 0.8, 'at', 0],[13.0, 900, 'K', 0]

HfN2
###Excellent Thermoelectric and Piezoelectric Properties of Differently Stacked Layers of Two-Dimensional Transition Metal Dinitride HfN2|Atanu Betal,Jayanta Bera,Satyajit Sahu###
(133623, 133625)
 The ZT value of 0.8 at 900 K is also highest for bilayer AB stackedHfN2.
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 12.59, 'pm', 2],[19.0, 0.8, 'at', 0],[18.0, 900, 'K', 0]

ZrTe5
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133725, 133727)
Large Nernst effect and field enhanced transversal ZT in ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 0.12, 'was', 6],[342.0, 120, 'K', 6]

ZrTe5
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133866, 133868)
 Here we present asignificantly large Nernst thermopower in topological semimetal ZrTe5, which isattributed to both strong Berry curvature and bipolar transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 0.12, 'was', 3],[201.0, 120, 'K', 3]

S
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133904, 133904)
 The largestin-plane Sxy (when B//b) approaches 1900 muV/K at T<missing VAR>100K and B13T<missing VAR>, and theout-of-plane Sxz (when B//c) reaches 5000 muV/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.12, 'was', 2],[165.0, 120, 'K', 2]

B
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133910, 133910)
 The largestin-plane Sxy (when B//b) approaches 1900 muV/K at T<missing VAR>100K and B13T<missing VAR>, and theout-of-plane Sxz (when B//c) reaches 5000 muV/K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 0.12, 'was', 2],[159.0, 120, 'K', 2]

V/K
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133921, 133923)
 The largestin-plane Sxy (when B//b) approaches 1900 muV/K at T<missing VAR>100K and B13T<missing VAR>, and theout-of-plane Sxz (when B//c) reaches 5000 muV/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[132.0, 0.12, 'was', 2],[146.0, 120, 'K', 2]

K
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133929, 133929)
 The largestin-plane Sxy (when B//b) approaches 1900 muV/K at T<missing VAR>100K and B13T<missing VAR>, and theout-of-plane Sxz (when B//c) reaches 5000 muV/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 0.12, 'was', 2],[140.0, 120, 'K', 2]

B13
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133933, 133934)
 The largestin-plane Sxy (when B//b) approaches 1900 muV/K at T<missing VAR>100K and B13T<missing VAR>, and theout-of-plane Sxz (when B//c) reaches 5000 muV/K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0.12, 'was', 2],[135.0, 120, 'K', 2]

S
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133949, 133949)
 The largestin-plane Sxy (when B//b) approaches 1900 muV/K at T<missing VAR>100K and B13T<missing VAR>, and theout-of-plane Sxz (when B//c) reaches 5000 muV/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 0.12, 'was', 2],[120.0, 120, 'K', 2]

B
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133955, 133955)
 The largestin-plane Sxy (when B//b) approaches 1900 muV/K at T<missing VAR>100K and B13T<missing VAR>, and theout-of-plane Sxz (when B//c) reaches 5000 muV/K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.12, 'was', 2],[114.0, 120, 'K', 2]

V/K
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133966, 133968)
 The largestin-plane Sxy (when B//b) approaches 1900 muV/K at T<missing VAR>100K and B13T<missing VAR>, and theout-of-plane Sxz (when B//c) reaches 5000 muV/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[87.0, 0.12, 'was', 2],[101.0, 120, 'K', 2]

As
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133971, 133971)
 As a critical part of z<missing VAR>NT<missing VAR>, the linearly increased in-plane Sxy and resistivity r<missing VAR>hoyy regard to Binduces an almost linear increasing transversal z<missing VAR>N T<missing VAR> without saturate underhigh fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0.12, 'was', 1],[98.0, 120, 'K', 1]

N
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133982, 133982)
 As a critical part of z<missing VAR>NT<missing VAR>, the linearly increased in-plane Sxy and resistivity r<missing VAR>hoyy regard to Binduces an almost linear increasing transversal z<missing VAR>N T<missing VAR> without saturate underhigh fields.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0.12, 'was', 1],[87.0, 120, 'K', 1]

S
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(133998, 133998)
 As a critical part of z<missing VAR>NT<missing VAR>, the linearly increased in-plane Sxy and resistivity r<missing VAR>hoyy regard to Binduces an almost linear increasing transversal z<missing VAR>N T<missing VAR> without saturate underhigh fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 0.12, 'was', 1],[71.0, 120, 'K', 1]

B
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(134013, 134013)
 As a critical part of z<missing VAR>NT<missing VAR>, the linearly increased in-plane Sxy and resistivity r<missing VAR>hoyy regard to Binduces an almost linear increasing transversal z<missing VAR>N T<missing VAR> without saturate underhigh fields.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.12, 'was', 1],[56.0, 120, 'K', 1]

N
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(134029, 134029)
 As a critical part of z<missing VAR>NT<missing VAR>, the linearly increased in-plane Sxy and resistivity r<missing VAR>hoyy regard to Binduces an almost linear increasing transversal z<missing VAR>N T<missing VAR> without saturate underhigh fields.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.12, 'was', 1],[40.0, 120, 'K', 1]

N
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(134050, 134050)
 The maximum z<missing VAR>N T<missing VAR> of 0.12 was obtained at B13 T<missing VAR> and T<missing VAR> 120K,which significantly surmounts its longitudinal counterpart under the samecondition.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.12, 'was', 0],[19.0, 120, 'K', 0]

B13
###Large Nernst effect and field enhanced transversal ZT in ZrTe5|Wang Peipei,Cho Chang-woo,Tang Fangdong,Wang Peng,Zhang Wenjie,He Mingquan,Gu Genda,Wu Xiaosong,Shao Yonghong,Zhang Liyuan###
(134061, 134062)
 The maximum z<missing VAR>N T<missing VAR> of 0.12 was obtained at B13 T<missing VAR> and T<missing VAR> 120K,which significantly surmounts its longitudinal counterpart under the samecondition.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.12, 'was', 0],[7.0, 120, 'K', 0]

Sm
###Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering|Andrei Novitskii,Illia Serhiienko,Sergey Novikov,Kirill Kuskov,Daria Pankratova,Tatyana Sviridova,Andrei Voronin,Aleksei Bogach,Elena Skryleva,Yuriy Parkhomenko,Alexander Burkov,Takao Mori,Vladimir Khovaylo###
(134109, 134109)
Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 2, 'times', 8],[397.0, 873, 'K', 8]

BiCuSeO
###Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering|Andrei Novitskii,Illia Serhiienko,Sergey Novikov,Kirill Kuskov,Daria Pankratova,Tatyana Sviridova,Andrei Voronin,Aleksei Bogach,Elena Skryleva,Yuriy Parkhomenko,Alexander Burkov,Takao Mori,Vladimir Khovaylo###
(134113, 134116)
Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 2, 'times', 8],[390.0, 873, 'K', 8]

BiCuSeO
###Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering|Andrei Novitskii,Illia Serhiienko,Sergey Novikov,Kirill Kuskov,Daria Pankratova,Tatyana Sviridova,Andrei Voronin,Aleksei Bogach,Elena Skryleva,Yuriy Parkhomenko,Alexander Burkov,Takao Mori,Vladimir Khovaylo###
(134144, 134147)
 Among layered oxygen-containing compounds, BiCuSeO is one of the mostpromising candidates for thermoelectric applications due to its intrinsicallylow thermal conductivity and good thermal stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 2, 'times', 7],[359.0, 873, 'K', 7]

BiCuSeO
###Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering|Andrei Novitskii,Illia Serhiienko,Sergey Novikov,Kirill Kuskov,Daria Pankratova,Tatyana Sviridova,Andrei Voronin,Aleksei Bogach,Elena Skryleva,Yuriy Parkhomenko,Alexander Burkov,Takao Mori,Vladimir Khovaylo###
(134212, 134215)
 However, the rather poorelectrical conductivity of pristine BiCuSeO hinders its potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 2, 'times', 6],[291.0, 873, 'K', 6]

Bi
###Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering|Andrei Novitskii,Illia Serhiienko,Sergey Novikov,Kirill Kuskov,Daria Pankratova,Tatyana Sviridova,Andrei Voronin,Aleksei Bogach,Elena Skryleva,Yuriy Parkhomenko,Alexander Burkov,Takao Mori,Vladimir Khovaylo###
(134245, 134245)
 Furtherenhancement of the thermoelectric performance by single doping at Bi site islimited mainly due to dramatic decrease of carrier mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 2, 'times', 5],[261.0, 873, 'K', 5]

Bi1-xSm
###Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering|Andrei Novitskii,Illia Serhiienko,Sergey Novikov,Kirill Kuskov,Daria Pankratova,Tatyana Sviridova,Andrei Voronin,Aleksei Bogach,Elena Skryleva,Yuriy Parkhomenko,Alexander Burkov,Takao Mori,Vladimir Khovaylo###
(134368, 134372)
 Hence, in this paper, Bi1-xSmx<missing VAR>CuSeO samples(0 leq x<missing VAR> leq 0.08) have been synthesized with a simple and scalablereactive sintering process.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[114.0, 2, 'times', 2],[134.0, 873, 'K', 2]

CuSeO
###Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering|Andrei Novitskii,Illia Serhiienko,Sergey Novikov,Kirill Kuskov,Daria Pankratova,Tatyana Sviridova,Andrei Voronin,Aleksei Bogach,Elena Skryleva,Yuriy Parkhomenko,Alexander Burkov,Takao Mori,Vladimir Khovaylo###
(134374, 134376)
 Hence, in this paper, Bi1-xSmx<missing VAR>CuSeO samples(0 leq x<missing VAR> leq 0.08) have been synthesized with a simple and scalablereactive sintering process.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'times', 2],[130.0, 873, 'K', 2]

Bi1-xSm
###Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering|Andrei Novitskii,Illia Serhiienko,Sergey Novikov,Kirill Kuskov,Daria Pankratova,Tatyana Sviridova,Andrei Voronin,Aleksei Bogach,Elena Skryleva,Yuriy Parkhomenko,Alexander Burkov,Takao Mori,Vladimir Khovaylo###
(134422, 134426)
 For comparison, Bi1-xSmx<missing VAR>CuSeOoxyselenides were also obtained by the conventional solid-state route.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[60.0, 2, 'times', 1],[80.0, 873, 'K', 1]

CuSeO
###Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering|Andrei Novitskii,Illia Serhiienko,Sergey Novikov,Kirill Kuskov,Daria Pankratova,Tatyana Sviridova,Andrei Voronin,Aleksei Bogach,Elena Skryleva,Yuriy Parkhomenko,Alexander Burkov,Takao Mori,Vladimir Khovaylo###
(134428, 134430)
 For comparison, Bi1-xSmx<missing VAR>CuSeOoxyselenides were also obtained by the conventional solid-state route.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, 'times', 1],[76.0, 873, 'K', 1]

Sm
###Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering|Andrei Novitskii,Illia Serhiienko,Sergey Novikov,Kirill Kuskov,Daria Pankratova,Tatyana Sviridova,Andrei Voronin,Aleksei Bogach,Elena Skryleva,Yuriy Parkhomenko,Alexander Burkov,Takao Mori,Vladimir Khovaylo###
(134464, 134464)
 Ourresults highlight that, Sm for Bi substitution increases the electricalconductivity by 1.5 - 2 times and decreases the Seebeck coefficient by 1.4times at 873 K for both series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'times', 0],[42.0, 873, 'K', 0]

Bi
###Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering|Andrei Novitskii,Illia Serhiienko,Sergey Novikov,Kirill Kuskov,Daria Pankratova,Tatyana Sviridova,Andrei Voronin,Aleksei Bogach,Elena Skryleva,Yuriy Parkhomenko,Alexander Burkov,Takao Mori,Vladimir Khovaylo###
(134468, 134468)
 Ourresults highlight that, Sm for Bi substitution increases the electricalconductivity by 1.5 - 2 times and decreases the Seebeck coefficient by 1.4times at 873 K for both series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'times', 0],[38.0, 873, 'K', 0]

In
###Data-driven reconstruction of spectral conductivity and chemical potential from thermoelectric transport data|Tomoki Hirosawa,Frank Schäfer,Hideaki Maebashi,Hiroyasu Matsuura,Masao Ogata###
(134848, 134848)
 In a second step, weapply our method to experimental data in doped one-dimensional tellurideTa4SiTe4[T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 110, ',', 5]

Te4
###Data-driven reconstruction of spectral conductivity and chemical potential from thermoelectric transport data|Tomoki Hirosawa,Frank Schäfer,Hideaki Maebashi,Hiroyasu Matsuura,Masao Ogata###
(134886, 134887)
 In a second step, weapply our method to experimental data in doped one-dimensional tellurideTa4SiTe4[T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 110, ',', 5]

S
###Thermoelectric effects in tunneling of spin-polarized electrons in a molecular transistor|A. D. Shkop###
(135253, 135253)
 It has been demonstrated that in the dependence ofthermopower S on the detuning energy there is an increased number of pointsof change of the sign and magnitude of S comparing with that of conventionalmolecular transistor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoelectric effects in tunneling of spin-polarized electrons in a molecular transistor|A. D. Shkop###
(135294, 135294)
 It has been demonstrated that in the dependence ofthermopower S on the detuning energy there is an increased number of pointsof change of the sign and magnitude of S comparing with that of conventionalmolecular transistor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Thermoelectric effects in tunneling of spin-polarized electrons in a molecular transistor|A. D. Shkop###
(135336, 135336)
 Optimal parameters, that provide the highestthermoelectric power at maximum efficiency Pme for spintronic moleculartransistor, have been found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Thermoelectric effects in tunneling of spin-polarized electrons in a molecular transistor|A. D. Shkop###
(135376, 135376)
 The dependences of the figure of merit ZT andPme on temperature and an external magnetic field have been calculated andthe influence of Coulomb interaction on the thermolelectric properties has beenstudied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag2Te
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135520, 135522)
Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0, ',', 1],[36.0, 0.015, ',', 1],[42.0, 0.055, ',', 1],[45.0, 0.115, ',', 1],[67.0, 5, 'K', 1],[70.0, 575, 'K', 1],[95.0, 5, 'K', 2],[98.0, 300, 'K', 2],[288.0, 410, 'K', 5],[292.0, 425, 'K', 5],[327.0, 0.86, 'near', 5],[328.0, 480, 'K', 5]

Ag2-x
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135543, 135546)
 We report on the thermoelectric properties of nickel doped Ag2-xNixTe (x<missing VAR>  0,0.015, 0.025  0.055, 0.115, 0.155) nanostructures in the temperature (T) rangeof 5 K to 575 K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[8.0, 0, ',', 0],[12.0, 0.015, ',', 0],[18.0, 0.055, ',', 0],[21.0, 0.115, ',', 0],[43.0, 5, 'K', 0],[46.0, 575, 'K', 0],[71.0, 5, 'K', 1],[74.0, 300, 'K', 1],[264.0, 410, 'K', 4],[268.0, 425, 'K', 4],[303.0, 0.86, 'near', 4],[304.0, 480, 'K', 4]

Te
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135548, 135548)
 We report on the thermoelectric properties of nickel doped Ag2-xNixTe (x<missing VAR>  0,0.015, 0.025  0.055, 0.115, 0.155) nanostructures in the temperature (T) rangeof 5 K to 575 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0, ',', 0],[10.0, 0.015, ',', 0],[16.0, 0.055, ',', 0],[19.0, 0.115, ',', 0],[41.0, 5, 'K', 0],[44.0, 575, 'K', 0],[69.0, 5, 'K', 1],[72.0, 300, 'K', 1],[262.0, 410, 'K', 4],[266.0, 425, 'K', 4],[301.0, 0.86, 'near', 4],[302.0, 480, 'K', 4]

Ag2Te
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135603, 135605)
 The electrical resistivity of Ag2Te nanostructure showsmetallic behaviour in 5 K to 300 K initially that evolves into two metal toinsulator transitions (M<missing VAR>ITs) at low and mid-temperature regimes with increasingx<missing VAR> due to Mott-variable range hopping (VR<missing VAR>H) and Arrhenius transports,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0, ',', 1],[45.0, 0.015, ',', 1],[39.0, 0.055, ',', 1],[36.0, 0.115, ',', 1],[14.0, 5, 'K', 1],[11.0, 575, 'K', 1],[12.0, 5, 'K', 0],[15.0, 300, 'K', 0],[205.0, 410, 'K', 3],[209.0, 425, 'K', 3],[244.0, 0.86, 'near', 3],[245.0, 480, 'K', 3]

I
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135643, 135643)
 The electrical resistivity of Ag2Te nanostructure showsmetallic behaviour in 5 K to 300 K initially that evolves into two metal toinsulator transitions (M<missing VAR>ITs) at low and mid-temperature regimes with increasingx<missing VAR> due to Mott-variable range hopping (VR<missing VAR>H) and Arrhenius transports,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0, ',', 1],[85.0, 0.015, ',', 1],[79.0, 0.055, ',', 1],[76.0, 0.115, ',', 1],[54.0, 5, 'K', 1],[51.0, 575, 'K', 1],[26.0, 5, 'K', 0],[23.0, 300, 'K', 0],[167.0, 410, 'K', 3],[171.0, 425, 'K', 3],[206.0, 0.86, 'near', 3],[207.0, 480, 'K', 3]

V
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135679, 135679)
 The electrical resistivity of Ag2Te nanostructure showsmetallic behaviour in 5 K to 300 K initially that evolves into two metal toinsulator transitions (M<missing VAR>ITs) at low and mid-temperature regimes with increasingx<missing VAR> due to Mott-variable range hopping (VR<missing VAR>H) and Arrhenius transports,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0, ',', 1],[121.0, 0.015, ',', 1],[115.0, 0.055, ',', 1],[112.0, 0.115, ',', 1],[90.0, 5, 'K', 1],[87.0, 575, 'K', 1],[62.0, 5, 'K', 0],[59.0, 300, 'K', 0],[131.0, 410, 'K', 3],[135.0, 425, 'K', 3],[170.0, 0.86, 'near', 3],[171.0, 480, 'K', 3]

H
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135681, 135681)
 The electrical resistivity of Ag2Te nanostructure showsmetallic behaviour in 5 K to 300 K initially that evolves into two metal toinsulator transitions (M<missing VAR>ITs) at low and mid-temperature regimes with increasingx<missing VAR> due to Mott-variable range hopping (VR<missing VAR>H) and Arrhenius transports,respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0, ',', 1],[123.0, 0.015, ',', 1],[117.0, 0.055, ',', 1],[114.0, 0.115, ',', 1],[92.0, 5, 'K', 1],[89.0, 575, 'K', 1],[64.0, 5, 'K', 0],[61.0, 300, 'K', 0],[129.0, 410, 'K', 3],[133.0, 425, 'K', 3],[168.0, 0.86, 'near', 3],[169.0, 480, 'K', 3]

V
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135765, 135765)
 Notably, this behaviour of the Seebeck coefficient is in contrast toMott VR<missing VAR>H conduction as observed in resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 0, ',', 3],[207.0, 0.015, ',', 3],[201.0, 0.055, ',', 3],[198.0, 0.115, ',', 3],[176.0, 5, 'K', 3],[173.0, 575, 'K', 3],[148.0, 5, 'K', 2],[145.0, 300, 'K', 2],[45.0, 410, 'K', 1],[49.0, 425, 'K', 1],[84.0, 0.86, 'near', 1],[85.0, 480, 'K', 1]

H
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135767, 135767)
 Notably, this behaviour of the Seebeck coefficient is in contrast toMott VR<missing VAR>H conduction as observed in resistivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0, ',', 3],[209.0, 0.015, ',', 3],[203.0, 0.055, ',', 3],[200.0, 0.115, ',', 3],[178.0, 5, 'K', 3],[175.0, 575, 'K', 3],[150.0, 5, 'K', 2],[147.0, 300, 'K', 2],[43.0, 410, 'K', 1],[47.0, 425, 'K', 1],[82.0, 0.86, 'near', 1],[83.0, 480, 'K', 1]

S
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135793, 135793)
 The steady increase inresistivity and S with the sharp decrease in thermal conductivity between 410 Kto 425 K associated with the structural phase transition accomplishes a maximumthermoelectric figure of merit (ZT) of 0.86 near 480 K in x<missing VAR>  0.155.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 0, ',', 4],[235.0, 0.015, ',', 4],[229.0, 0.055, ',', 4],[226.0, 0.115, ',', 4],[204.0, 5, 'K', 4],[201.0, 575, 'K', 4],[176.0, 5, 'K', 3],[173.0, 300, 'K', 3],[17.0, 410, 'K', 0],[21.0, 425, 'K', 0],[56.0, 0.86, 'near', 0],[57.0, 480, 'K', 0]

Ag2Te
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135883, 135885)
 This isabout 83 % more compared to that of bulk Ag2Te, and shows a significantimprovement over the best value reported for Ag2Te nanostructures thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 0, ',', 5],[325.0, 0.015, ',', 5],[319.0, 0.055, ',', 5],[316.0, 0.115, ',', 5],[294.0, 5, 'K', 5],[291.0, 575, 'K', 5],[266.0, 5, 'K', 4],[263.0, 300, 'K', 4],[73.0, 410, 'K', 1],[69.0, 425, 'K', 1],[34.0, 0.86, 'near', 1],[33.0, 480, 'K', 1]

Ag2Te
###Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te|Vikash Sharma,Divya Sharma,Ranu Bhatt,Pankaj Patro,Gunadhor Singh Okram###
(135911, 135913)
 This isabout 83 % more compared to that of bulk Ag2Te, and shows a significantimprovement over the best value reported for Ag2Te nanostructures thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 0, ',', 5],[353.0, 0.015, ',', 5],[347.0, 0.055, ',', 5],[344.0, 0.115, ',', 5],[322.0, 5, 'K', 5],[319.0, 575, 'K', 5],[294.0, 5, 'K', 4],[291.0, 300, 'K', 4],[101.0, 410, 'K', 1],[97.0, 425, 'K', 1],[62.0, 0.86, 'near', 1],[61.0, 480, 'K', 1]

Ni2InSb
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136009, 136012)
Double Half-Heusler Alloys X<missing VAR>2Ni2InSb (X<missing VAR> Zr/Hf) with promising Thermoelectric Performance Role of varying structural phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[404.0, 0.06, 'eV', 7],[432.0, 2.19, ',', 8],[446.0, 2.46, 'at', 8],[494.0, 1.35, 'and', 9],[497.0, 2.19, 'for', 9]

Hf
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136019, 136019)
Double Half-Heusler Alloys X<missing VAR>2Ni2InSb (X<missing VAR> Zr/Hf) with promising Thermoelectric Performance Role of varying structural phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 0.06, 'eV', 7],[425.0, 2.19, ',', 8],[439.0, 2.46, 'at', 8],[487.0, 1.35, 'and', 9],[490.0, 2.19, 'for', 9]

(HH)
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136137, 136140)
 Here, we report a detailed study of thermoelectric(TE) properties of two double half-heusler (HH) alloys X<missing VAR>2Ni2InSb(X<missing VAR>Hf/Zr), using first-principles calculation.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 0.06, 'eV', 5],[304.0, 2.19, ',', 6],[318.0, 2.46, 'at', 6],[366.0, 1.35, 'and', 7],[369.0, 2.19, 'for', 7]

Ni2InSb
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136146, 136149)
 Here, we report a detailed study of thermoelectric(TE) properties of two double half-heusler (HH) alloys X<missing VAR>2Ni2InSb(X<missing VAR>Hf/Zr), using first-principles calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 0.06, 'eV', 5],[295.0, 2.19, ',', 6],[309.0, 2.46, 'at', 6],[357.0, 1.35, 'and', 7],[360.0, 2.19, 'for', 7]

Zr
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136156, 136156)
 Here, we report a detailed study of thermoelectric(TE) properties of two double half-heusler (HH) alloys X<missing VAR>2Ni2InSb(X<missing VAR>Hf/Zr), using first-principles calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 0.06, 'eV', 5],[288.0, 2.19, ',', 6],[302.0, 2.46, 'at', 6],[350.0, 1.35, 'and', 7],[353.0, 2.19, 'for', 7]

As
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136215, 136215)
 As such, a comparative study of TEproperties of all these phases is performed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 0.06, 'eV', 3],[229.0, 2.19, ',', 4],[243.0, 2.46, 'at', 4],[291.0, 1.35, 'and', 5],[294.0, 2.19, 'for', 5]

HH
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136294, 136295)
 Lattice thermal conductivity of double HH alloys is lower than theirternary counter-part, making them most promising for TE application.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0.06, 'eV', 1],[149.0, 2.19, ',', 2],[163.0, 2.46, 'at', 2],[211.0, 1.35, 'and', 3],[214.0, 2.19, 'for', 3]

Hf2Ni2InSb
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136357, 136362)
 Simulatedband gap, obtained using hybrid functional, of ordered phases ofHf2Ni2InSb and Zr2Ni2InSb lie in the range 0.24-0.4 e<missing VAR>V and0.17-0.59 e<missing VAR>V respectively, while for disordered phase, it is 0.05- 0.06 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.06, 'eV', 0],[82.0, 2.19, ',', 1],[96.0, 2.46, 'at', 1],[144.0, 1.35, 'and', 2],[147.0, 2.19, 'for', 2]

Zr2Ni2InSb
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136366, 136371)
 Simulatedband gap, obtained using hybrid functional, of ordered phases ofHf2Ni2InSb and Zr2Ni2InSb lie in the range 0.24-0.4 e<missing VAR>V and0.17-0.59 e<missing VAR>V respectively, while for disordered phase, it is 0.05- 0.06 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.16666666666666666,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0.06, 'eV', 0],[73.0, 2.19, ',', 1],[87.0, 2.46, 'at', 1],[135.0, 1.35, 'and', 2],[138.0, 2.19, 'for', 2]

V
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136386, 136386)
 Simulatedband gap, obtained using hybrid functional, of ordered phases ofHf2Ni2InSb and Zr2Ni2InSb lie in the range 0.24-0.4 e<missing VAR>V and0.17-0.59 e<missing VAR>V respectively, while for disordered phase, it is 0.05- 0.06 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0.06, 'eV', 0],[58.0, 2.19, ',', 1],[72.0, 2.46, 'at', 1],[120.0, 1.35, 'and', 2],[123.0, 2.19, 'for', 2]

V
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136396, 136396)
 Simulatedband gap, obtained using hybrid functional, of ordered phases ofHf2Ni2InSb and Zr2Ni2InSb lie in the range 0.24-0.4 e<missing VAR>V and0.17-0.59 e<missing VAR>V respectively, while for disordered phase, it is 0.05- 0.06 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.06, 'eV', 0],[48.0, 2.19, ',', 1],[62.0, 2.46, 'at', 1],[110.0, 1.35, 'and', 2],[113.0, 2.19, 'for', 2]

Hf2Ni2InSb
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136420, 136425)
Hf2Ni2InSb shows a reasonably high ZT value of sim 2.19, whileZr2Ni2InSb yields 2.46 at high temperature for n<missing VAR>-type conduction intetragonal phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.06, 'eV', 1],[19.0, 2.19, ',', 0],[33.0, 2.46, 'at', 0],[81.0, 1.35, 'and', 1],[84.0, 2.19, 'for', 1]

Zr2Ni2InSb
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136450, 136455)
Hf2Ni2InSb shows a reasonably high ZT value of sim 2.19, whileZr2Ni2InSb yields 2.46 at high temperature for n<missing VAR>-type conduction intetragonal phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.16666666666666666,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.06, 'eV', 1],[6.0, 2.19, ',', 0],[3.0, 2.46, 'at', 0],[51.0, 1.35, 'and', 1],[54.0, 2.19, 'for', 1]

Hf
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136511, 136511)
 The ZT value for p<missing VAR>-type conduction is also quite promising(sim 1.35 and sim 2.19 for Hf- and Zr-based compounds).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.06, 'eV', 2],[67.0, 2.19, ',', 1],[53.0, 2.46, 'at', 1],[5.0, 1.35, 'and', 0],[2.0, 2.19, 'for', 0]

Zr
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136516, 136516)
 The ZT value for p<missing VAR>-type conduction is also quite promising(sim 1.35 and sim 2.19 for Hf- and Zr-based compounds).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.06, 'eV', 2],[72.0, 2.19, ',', 1],[58.0, 2.46, 'at', 1],[10.0, 1.35, 'and', 0],[7.0, 2.19, 'for', 0]

In
###Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases|Bhawna Sahni,Aftab Alam###
(136524, 136524)
 In both thecompounds, electronic transport (Seebeck and electrical conductivity) plays thedominant role for the high ZT-value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 0.06, 'eV', 3],[80.0, 2.19, ',', 2],[66.0, 2.46, 'at', 2],[18.0, 1.35, 'and', 1],[15.0, 2.19, 'for', 1]

Si
###Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6|Swapnil Ghodke,Omprakash Muthusamy,Kevin Delime Codrin,Seongho Choi,Saurabh Singh,Dogyun Byeon,Masahiro Adachi,Makoto Kiyama,Takashi Matsuura,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(136642, 136642)
Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds Achieving Figure of Merit ZT > 3.6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 3.6, 'at', 3],[166.0, 1000, 'K', 3],[191.0, 1, 'atomic', 4],[241.0, 9.7, 'nm', 5],[351.0, 1, 'W', 6],[376.0, 470, 'uV', 6],[402.0, 3, 'd', 6]

Ge
###Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6|Swapnil Ghodke,Omprakash Muthusamy,Kevin Delime Codrin,Seongho Choi,Saurabh Singh,Dogyun Byeon,Masahiro Adachi,Makoto Kiyama,Takashi Matsuura,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(136644, 136644)
Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds Achieving Figure of Merit ZT > 3.6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 3.6, 'at', 3],[164.0, 1000, 'K', 3],[189.0, 1, 'atomic', 4],[239.0, 9.7, 'nm', 5],[349.0, 1, 'W', 6],[374.0, 470, 'uV', 6],[400.0, 3, 'd', 6]

P
###Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6|Swapnil Ghodke,Omprakash Muthusamy,Kevin Delime Codrin,Seongho Choi,Saurabh Singh,Dogyun Byeon,Masahiro Adachi,Makoto Kiyama,Takashi Matsuura,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(136646, 136646)
Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds Achieving Figure of Merit ZT > 3.6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 3.6, 'at', 3],[162.0, 1000, 'K', 3],[187.0, 1, 'atomic', 4],[237.0, 9.7, 'nm', 5],[347.0, 1, 'W', 6],[372.0, 470, 'uV', 6],[398.0, 3, 'd', 6]

In
###Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6|Swapnil Ghodke,Omprakash Muthusamy,Kevin Delime Codrin,Seongho Choi,Saurabh Singh,Dogyun Byeon,Masahiro Adachi,Makoto Kiyama,Takashi Matsuura,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(136739, 136739)
 In this work, the problem isaddressed with a novel approach of nanostructuring and constructive electronicstructure modification to achieve a very high value of dimensionless figure ofmerit ZT greater than 3.6 at 1000 K with negative Seebeck coefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 3.6, 'at', 0],[69.0, 1000, 'K', 0],[94.0, 1, 'atomic', 1],[144.0, 9.7, 'nm', 2],[254.0, 1, 'W', 3],[279.0, 470, 'uV', 3],[305.0, 3, 'd', 3]

Si
###Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6|Swapnil Ghodke,Omprakash Muthusamy,Kevin Delime Codrin,Seongho Choi,Saurabh Singh,Dogyun Byeon,Masahiro Adachi,Makoto Kiyama,Takashi Matsuura,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(136828, 136828)
Supersaturated solid-solutions of Si-Ge containing 1 atomic percent Fe and 10atomic percent P are prepared by high-energy ball milling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3.6, 'at', 1],[20.0, 1000, 'K', 1],[5.0, 1, 'atomic', 0],[55.0, 9.7, 'nm', 1],[165.0, 1, 'W', 2],[190.0, 470, 'uV', 2],[216.0, 3, 'd', 2]

Ge
###Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6|Swapnil Ghodke,Omprakash Muthusamy,Kevin Delime Codrin,Seongho Choi,Saurabh Singh,Dogyun Byeon,Masahiro Adachi,Makoto Kiyama,Takashi Matsuura,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(136830, 136830)
Supersaturated solid-solutions of Si-Ge containing 1 atomic percent Fe and 10atomic percent P are prepared by high-energy ball milling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 3.6, 'at', 1],[22.0, 1000, 'K', 1],[3.0, 1, 'atomic', 0],[53.0, 9.7, 'nm', 1],[163.0, 1, 'W', 2],[188.0, 470, 'uV', 2],[214.0, 3, 'd', 2]

Fe
###Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6|Swapnil Ghodke,Omprakash Muthusamy,Kevin Delime Codrin,Seongho Choi,Saurabh Singh,Dogyun Byeon,Masahiro Adachi,Makoto Kiyama,Takashi Matsuura,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(136837, 136837)
Supersaturated solid-solutions of Si-Ge containing 1 atomic percent Fe and 10atomic percent P are prepared by high-energy ball milling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 3.6, 'at', 1],[29.0, 1000, 'K', 1],[4.0, 1, 'atomic', 0],[46.0, 9.7, 'nm', 1],[156.0, 1, 'W', 2],[181.0, 470, 'uV', 2],[207.0, 3, 'd', 2]

P
###Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6|Swapnil Ghodke,Omprakash Muthusamy,Kevin Delime Codrin,Seongho Choi,Saurabh Singh,Dogyun Byeon,Masahiro Adachi,Makoto Kiyama,Takashi Matsuura,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(136848, 136848)
Supersaturated solid-solutions of Si-Ge containing 1 atomic percent Fe and 10atomic percent P are prepared by high-energy ball milling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3.6, 'at', 1],[40.0, 1000, 'K', 1],[15.0, 1, 'atomic', 0],[35.0, 9.7, 'nm', 1],[145.0, 1, 'W', 2],[170.0, 470, 'uV', 2],[196.0, 3, 'd', 2]

K
###Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6|Swapnil Ghodke,Omprakash Muthusamy,Kevin Delime Codrin,Seongho Choi,Saurabh Singh,Dogyun Byeon,Masahiro Adachi,Makoto Kiyama,Takashi Matsuura,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(136998, 136998)
 Despite thatthe electrical resistivity is slightly high due to the localization ofelectrons is associated with the highly disordered structure and low electricaldensity of states near the chemical potential, a very low thermal conductivityk<missing VAR>appa less than 1 W m<missing VAR>-1K-1 and very large magnitude of Seebeck coefficientexceeding 470 uV K-1 are achieved in association with the nanostructuring andthe Fe 3d impurity states, respectively, to realize a very large magnitude ofZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 3.6, 'at', 3],[190.0, 1000, 'K', 3],[165.0, 1, 'atomic', 2],[115.0, 9.7, 'nm', 1],[5.0, 1, 'W', 0],[20.0, 470, 'uV', 0],[46.0, 3, 'd', 0]

K
###Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6|Swapnil Ghodke,Omprakash Muthusamy,Kevin Delime Codrin,Seongho Choi,Saurabh Singh,Dogyun Byeon,Masahiro Adachi,Makoto Kiyama,Takashi Matsuura,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(137020, 137020)
 Despite thatthe electrical resistivity is slightly high due to the localization ofelectrons is associated with the highly disordered structure and low electricaldensity of states near the chemical potential, a very low thermal conductivityk<missing VAR>appa less than 1 W m<missing VAR>-1K-1 and very large magnitude of Seebeck coefficientexceeding 470 uV K-1 are achieved in association with the nanostructuring andthe Fe 3d impurity states, respectively, to realize a very large magnitude ofZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 3.6, 'at', 3],[212.0, 1000, 'K', 3],[187.0, 1, 'atomic', 2],[137.0, 9.7, 'nm', 1],[27.0, 1, 'W', 0],[2.0, 470, 'uV', 0],[24.0, 3, 'd', 0]

Fe
###Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6|Swapnil Ghodke,Omprakash Muthusamy,Kevin Delime Codrin,Seongho Choi,Saurabh Singh,Dogyun Byeon,Masahiro Adachi,Makoto Kiyama,Takashi Matsuura,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(137043, 137043)
 Despite thatthe electrical resistivity is slightly high due to the localization ofelectrons is associated with the highly disordered structure and low electricaldensity of states near the chemical potential, a very low thermal conductivityk<missing VAR>appa less than 1 W m<missing VAR>-1K-1 and very large magnitude of Seebeck coefficientexceeding 470 uV K-1 are achieved in association with the nanostructuring andthe Fe 3d impurity states, respectively, to realize a very large magnitude ofZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 3.6, 'at', 3],[235.0, 1000, 'K', 3],[210.0, 1, 'atomic', 2],[160.0, 9.7, 'nm', 1],[50.0, 1, 'W', 0],[25.0, 470, 'uV', 0],[1.0, 3, 'd', 0]

(PCN)
###Unexpectedly High Cross-plane Thermoelectric Performance in Layered Carbon Nitrides|Zhidong Ding,Meng An,Shenqiu Mo,Xiaoxiang Yu,Zelin Jin,Yuxuan Liao,Jingtao Lü,Kevian Esfarjani,Junichiro Shiomi,Nuo Yang###
(137252, 137256)
 Here we propose a strategy toutilize the overlap of pz orbitals to increase the TE efficiency of layeredpolymeric carbon nitride (PCN).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.52, 'at', 1],[57.0, 300, 'K', 1]

PCN
###Unexpectedly High Cross-plane Thermoelectric Performance in Layered Carbon Nitrides|Zhidong Ding,Meng An,Shenqiu Mo,Xiaoxiang Yu,Zelin Jin,Yuxuan Liao,Jingtao Lü,Kevian Esfarjani,Junichiro Shiomi,Nuo Yang###
(137291, 137293)
 Through first-principles calculations andclassical molecular dynamics simulations, we find that A-A stacked PCN hasunexpectedly high cross-plane ZT up to 0.52 at 300 K, which can contribute ton<missing VAR>-type TE groups.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.52, 'at', 0],[20.0, 300, 'K', 0]

RuIn3-x
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137563, 137567)
Electronic and Thermoelectric Properties of RuIn3-xAx<missing VAR> (A  Sn, Zn).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[43.0, 26, ',', 6]

Sn
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137575, 137575)
Electronic and Thermoelectric Properties of RuIn3-xAx<missing VAR> (A  Sn, Zn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 26, ',', 6]

Zn
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137578, 137578)
Electronic and Thermoelectric Properties of RuIn3-xAx<missing VAR> (A  Sn, Zn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 26, ',', 6]

RuIn3
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137635, 137637)
 26, 1886 (2011)]transport measurements on the semiconducting intermetallic system RuIn3 and itssubstitution derivatives RuIn3-xAx<missing VAR> (A  Sn, Zn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 26, ',', 0]

RuIn3-x
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137648, 137652)
 26, 1886 (2011)]transport measurements on the semiconducting intermetallic system RuIn3 and itssubstitution derivatives RuIn3-xAx<missing VAR> (A  Sn, Zn).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[38.0, 26, ',', 0]

Sn
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137660, 137660)
 26, 1886 (2011)]transport measurements on the semiconducting intermetallic system RuIn3 and itssubstitution derivatives RuIn3-xAx<missing VAR> (A  Sn, Zn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 26, ',', 0]

Zn
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137663, 137663)
 26, 1886 (2011)]transport measurements on the semiconducting intermetallic system RuIn3 and itssubstitution derivatives RuIn3-xAx<missing VAR> (A  Sn, Zn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 26, ',', 0]

RuIn3-x
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137786, 137790)
 We show in detail that the electronic structure of the substitutionvariants of the intermetallic system RuIn3-xAx<missing VAR> (A  Sn, Zn) changes in arigid-band like fashion.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[176.0, 26, ',', 3]

Sn
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137798, 137798)
 We show in detail that the electronic structure of the substitutionvariants of the intermetallic system RuIn3-xAx<missing VAR> (A  Sn, Zn) changes in arigid-band like fashion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 26, ',', 3]

Zn
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137801, 137801)
 We show in detail that the electronic structure of the substitutionvariants of the intermetallic system RuIn3-xAx<missing VAR> (A  Sn, Zn) changes in arigid-band like fashion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 26, ',', 3]

RuIn3-xSn
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137944, 137949)
 Trends in thetransport properties calculated using the semi-classical Boltzmann transportequations within the constant scattering time approximation are in goodagreement with the former experimental results for RuIn3-xSnx<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[334.0, 26, ',', 5]

Zn
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137982, 137982)
 Based onthe calculated thermopower for the p<missing VAR>-doped systems, we reinvestigated theZn-substituted derivative and obtained ZnO-free RuIn3-xZnx<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, 26, ',', 6]

ZnO
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137992, 137993)
 Based onthe calculated thermopower for the p<missing VAR>-doped systems, we reinvestigated theZn-substituted derivative and obtained ZnO-free RuIn3-xZnx<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 26, ',', 6]

RuIn3-xZn
###Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)|Deepa Kasinathan,Maik Wagner,Klaus Koepernik,Raul Cardoso-Gil,Yu. Grin,Helge Rosner###
(137997, 138002)
 Based onthe calculated thermopower for the p<missing VAR>-doped systems, we reinvestigated theZn-substituted derivative and obtained ZnO-free RuIn3-xZnx<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[387.0, 26, ',', 6]

(PV)
###The maximum theoretical performance of unconcentrated solar photovoltaic and thermoelectric generator systems|Rasmus Bjørk,Kaspar K. Nielsen###
(138091, 138094)
 The maximum efficiency for photovoltaic (PV) and thermoelectric generator(TEG) systems without concentration is investigated.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 4.5, 'percentage', 3]

PV
###The maximum theoretical performance of unconcentrated solar photovoltaic and thermoelectric generator systems|Rasmus Bjørk,Kaspar K. Nielsen###
(138153, 138154)
 Both a combined systemwhere the TEG is mounted directly on the back of the PV and a tandem systemwhere the incoming sunlight is split, and the short wavelength radiation issent to the PV and the long wavelength to the TEG, are considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 4.5, 'percentage', 2]

PV
###The maximum theoretical performance of unconcentrated solar photovoltaic and thermoelectric generator systems|Rasmus Bjørk,Kaspar K. Nielsen###
(138197, 138198)
 Both a combined systemwhere the TEG is mounted directly on the back of the PV and a tandem systemwhere the incoming sunlight is split, and the short wavelength radiation issent to the PV and the long wavelength to the TEG, are considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 4.5, 'percentage', 2]

P
###The maximum theoretical performance of unconcentrated solar photovoltaic and thermoelectric generator systems|Rasmus Bjørk,Kaspar K. Nielsen###
(138245, 138245)
 Ananalytical model based on the Shockley-Queisser efficiency limit for PVs andthe TEG figure of merit parameter zT is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 4.5, 'percentage', 1]

PV
###The maximum theoretical performance of unconcentrated solar photovoltaic and thermoelectric generator systems|Rasmus Bjørk,Kaspar K. Nielsen###
(138316, 138317)
 It is shown that fornon-concentrated sunlight, even if the TEG operates at the Carnot efficiencyand the PV performance is assumed independent of temperature, the maximumincrease in efficiency is 4.5 percentage points (pp.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 4.5, 'percentage', 0]

PV
###The maximum theoretical performance of unconcentrated solar photovoltaic and thermoelectric generator systems|Rasmus Bjørk,Kaspar K. Nielsen###
(138387, 138388)
 for the tandem case compared to a stand alone PV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 4.5, 'percentage', 2]

PV
###The maximum theoretical performance of unconcentrated solar photovoltaic and thermoelectric generator systems|Rasmus Bjørk,Kaspar K. Nielsen###
(138410, 138411)
 For a more realisticcase with a temperature dependent PV and a realistic TEG, the gain inperformance is much lower.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 4.5, 'percentage', 3]

PV
###The maximum theoretical performance of unconcentrated solar photovoltaic and thermoelectric generator systems|Rasmus Bjørk,Kaspar K. Nielsen###
(138446, 138447)
 For the combined PV and TEG system it is shown thata minimum zT value is needed in order for the system to be more efficientthan a stand alone PV system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 4.5, 'percentage', 4]

PV
###The maximum theoretical performance of unconcentrated solar photovoltaic and thermoelectric generator systems|Rasmus Bjørk,Kaspar K. Nielsen###
(138506, 138507)
 For the combined PV and TEG system it is shown thata minimum zT value is needed in order for the system to be more efficientthan a stand alone PV system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 4.5, 'percentage', 4]

Sn
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138541, 138541)
Thermoelectric and lattice dynamics properties of layered MX (M<missing VAR>  Sn, Pb; X<missing VAR>  S, Te) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 2, 'D', 7],[403.0, 1.04, ',', 8],[406.0, 1.46, ',', 8],[408.0, 1.51, 'and', 8],[450.0, 700, 'K', 8]

Pb
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138544, 138544)
Thermoelectric and lattice dynamics properties of layered MX (M<missing VAR>  Sn, Pb; X<missing VAR>  S, Te) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 2, 'D', 7],[400.0, 1.04, ',', 8],[403.0, 1.46, ',', 8],[405.0, 1.51, 'and', 8],[447.0, 700, 'K', 8]

S
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138550, 138550)
Thermoelectric and lattice dynamics properties of layered MX (M<missing VAR>  Sn, Pb; X<missing VAR>  S, Te) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 2, 'D', 7],[394.0, 1.04, ',', 8],[397.0, 1.46, ',', 8],[399.0, 1.51, 'and', 8],[441.0, 700, 'K', 8]

Te
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138553, 138553)
Thermoelectric and lattice dynamics properties of layered MX (M<missing VAR>  Sn, Pb; X<missing VAR>  S, Te) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 2, 'D', 7],[391.0, 1.04, ',', 8],[394.0, 1.46, ',', 8],[396.0, 1.51, 'and', 8],[438.0, 700, 'K', 8]

Sn
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138710, 138710)
 Using density functional theory combinedwith the Semi-classical Boltzmann transport theory, we studied the structural,electronic and TE properties of two-dimensional (2D) MX (M<missing VAR>  Sn, Pb; X<missing VAR>  S, Te)monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 2, 'D', 4],[234.0, 1.04, ',', 5],[237.0, 1.46, ',', 5],[239.0, 1.51, 'and', 5],[281.0, 700, 'K', 5]

Pb
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138713, 138713)
 Using density functional theory combinedwith the Semi-classical Boltzmann transport theory, we studied the structural,electronic and TE properties of two-dimensional (2D) MX (M<missing VAR>  Sn, Pb; X<missing VAR>  S, Te)monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 2, 'D', 4],[231.0, 1.04, ',', 5],[234.0, 1.46, ',', 5],[236.0, 1.51, 'and', 5],[278.0, 700, 'K', 5]

S
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138719, 138719)
 Using density functional theory combinedwith the Semi-classical Boltzmann transport theory, we studied the structural,electronic and TE properties of two-dimensional (2D) MX (M<missing VAR>  Sn, Pb; X<missing VAR>  S, Te)monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 2, 'D', 4],[225.0, 1.04, ',', 5],[228.0, 1.46, ',', 5],[230.0, 1.51, 'and', 5],[272.0, 700, 'K', 5]

Te
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138722, 138722)
 Using density functional theory combinedwith the Semi-classical Boltzmann transport theory, we studied the structural,electronic and TE properties of two-dimensional (2D) MX (M<missing VAR>  Sn, Pb; X<missing VAR>  S, Te)monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 2, 'D', 4],[222.0, 1.04, ',', 5],[225.0, 1.46, ',', 5],[227.0, 1.51, 'and', 5],[269.0, 700, 'K', 5]

SnS
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138811, 138812)
 Structuraloptimization followed by phonon transport studies prevailed that therectangular (gamma-) phase is energetically the most favorable for SnS andSnTe monolayers, whereas the square structure is found the most stable for PbSand PbTe monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'D', 2],[132.0, 1.04, ',', 3],[135.0, 1.46, ',', 3],[137.0, 1.51, 'and', 3],[179.0, 700, 'K', 3]

SnTe
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138817, 138818)
 Structuraloptimization followed by phonon transport studies prevailed that therectangular (gamma-) phase is energetically the most favorable for SnS andSnTe monolayers, whereas the square structure is found the most stable for PbSand PbTe monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2, 'D', 2],[126.0, 1.04, ',', 3],[129.0, 1.46, ',', 3],[131.0, 1.51, 'and', 3],[173.0, 700, 'K', 3]

PbS
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138843, 138844)
 Structuraloptimization followed by phonon transport studies prevailed that therectangular (gamma-) phase is energetically the most favorable for SnS andSnTe monolayers, whereas the square structure is found the most stable for PbSand PbTe monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2, 'D', 2],[100.0, 1.04, ',', 3],[103.0, 1.46, ',', 3],[105.0, 1.51, 'and', 3],[147.0, 700, 'K', 3]

PbTe
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138849, 138850)
 Structuraloptimization followed by phonon transport studies prevailed that therectangular (gamma-) phase is energetically the most favorable for SnS andSnTe monolayers, whereas the square structure is found the most stable for PbSand PbTe monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2, 'D', 2],[94.0, 1.04, ',', 3],[97.0, 1.46, ',', 3],[99.0, 1.51, 'and', 3],[141.0, 700, 'K', 3]

SnS
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138964, 138965)
 The maximum figure of merits (ZT) of 1.04, 1.46, 1.51 and 1.94are predicted for n<missing VAR>-type SnS, SnTe, PBS and p<missing VAR>-type PbTe monolayers respectivelyat 700 K, which are higher than their bulk ZT values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2, 'D', 1],[20.0, 1.04, ',', 0],[17.0, 1.46, ',', 0],[15.0, 1.51, 'and', 0],[26.0, 700, 'K', 0]

SnTe
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138968, 138969)
 The maximum figure of merits (ZT) of 1.04, 1.46, 1.51 and 1.94are predicted for n<missing VAR>-type SnS, SnTe, PBS and p<missing VAR>-type PbTe monolayers respectivelyat 700 K, which are higher than their bulk ZT values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'D', 1],[24.0, 1.04, ',', 0],[21.0, 1.46, ',', 0],[19.0, 1.51, 'and', 0],[22.0, 700, 'K', 0]

PBS
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138972, 138974)
 The maximum figure of merits (ZT) of 1.04, 1.46, 1.51 and 1.94are predicted for n<missing VAR>-type SnS, SnTe, PBS and p<missing VAR>-type PbTe monolayers respectivelyat 700 K, which are higher than their bulk ZT values.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'D', 1],[28.0, 1.04, ',', 0],[25.0, 1.46, ',', 0],[23.0, 1.51, 'and', 0],[17.0, 700, 'K', 0]

PbTe
###Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds|Abhiyan Pandit,Bothina Hamad###
(138982, 138983)
 The maximum figure of merits (ZT) of 1.04, 1.46, 1.51 and 1.94are predicted for n<missing VAR>-type SnS, SnTe, PBS and p<missing VAR>-type PbTe monolayers respectivelyat 700 K, which are higher than their bulk ZT values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, 'D', 1],[38.0, 1.04, ',', 0],[35.0, 1.46, ',', 0],[33.0, 1.51, 'and', 0],[8.0, 700, 'K', 0]

La0.7Sr0.3CoO3
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139063, 139069)
Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[510.0, 800, 'K', 9]

(S)
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139082, 139084)
 A high Seebeck coefficient (S), large electrical conductivity (sigma), andreduced thermal conductivity (kappa) are required to achieve a highfigure-of-merit (zT) in an ideal thermoelectric (TE) system, which ischallenging in a single system due to the interdependence of TE parameters.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[495.0, 800, 'K', 8]

In
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139203, 139203)
 In this study,TE properties of (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 (0.00 leq x<missing VAR> leq 0.05)composite is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[376.0, 800, 'K', 6]

La0.7Sr0.3CoO3
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139231, 139237)
 In this study,TE properties of (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 (0.00 leq x<missing VAR> leq 0.05)composite is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 800, 'K', 6]

(VO)
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139315, 139318)
 Thex<missing VAR>-ray photoelectron analysis indicates that oxygen vacancies (VO) are presentin the parent LaCoO3 system and increase with the addition of La0.7Sr0.3CoO3(L<missing VAR>SCO) in the composite.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 800, 'K', 4]

LaCoO3
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139331, 139334)
 Thex<missing VAR>-ray photoelectron analysis indicates that oxygen vacancies (VO) are presentin the parent LaCoO3 system and increase with the addition of La0.7Sr0.3CoO3(L<missing VAR>SCO) in the composite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 800, 'K', 4]

La0.7Sr0.3CoO3
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139350, 139356)
 Thex<missing VAR>-ray photoelectron analysis indicates that oxygen vacancies (VO) are presentin the parent LaCoO3 system and increase with the addition of La0.7Sr0.3CoO3(L<missing VAR>SCO) in the composite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 800, 'K', 4]

O
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139363, 139363)
 Thex<missing VAR>-ray photoelectron analysis indicates that oxygen vacancies (VO) are presentin the parent LaCoO3 system and increase with the addition of La0.7Sr0.3CoO3(L<missing VAR>SCO) in the composite.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 800, 'K', 4]

VO
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139379, 139380)
 The increase in VO raises the degenerate states ofcobalt and hence improves S in the composites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 800, 'K', 3]

S
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139401, 139401)
 The increase in VO raises the degenerate states ofcobalt and hence improves S in the composites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 800, 'K', 3]

S
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139416, 139416)
 Temperature variation in S andsigma are consistent with the spin-state transition and shows thecorrelation between these two parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 800, 'K', 2]

La0.7Sr0.3CoO3
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139480, 139486)
 The reduction in kappa andsigma with the addition of ball-milled La0.7Sr0.3CoO3 in the composite isattributed to the enhanced phonon-phonon and charge carrier scattering,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 800, 'K', 1]

S
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139532, 139532)
 A synergistic effect of enhanced S and reduced kappa result infive times improvement in zT of the composite compared to the parent LaCoO3system at 800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 800, 'K', 0]

LaCoO3
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139570, 139573)
 A synergistic effect of enhanced S and reduced kappa result infive times improvement in zT of the composite compared to the parent LaCoO3system at 800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 800, 'K', 0]

LaCoO3
###Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite|Ashutosh Kumar,D. Sivaprahasam,Ajay D. Thakur###
(139599, 139602)
 This approach also improves the operating temperature forLaCoO3 based systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 800, 'K', 1]

Bi
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139621, 139621)
Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p<missing VAR>-type Half-Heusler TaSbRu A First-principles Study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1.54, 'in', 2],[243.0, 3.8, 'mWm', 4],[251.0, 300, 'K', 4],[379.0, 300, 'K', 6],[382.0, 50, '%', 6],[410.0, 5, 'from', 7],[411.0, 20, 'W', 7],[475.0, 50, '%', 8],[482.0, 1200, 'K', 8],[546.0, 50, '%', 9]

TaSbRu
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139649, 139651)
Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p<missing VAR>-type Half-Heusler TaSbRu A First-principles Study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 1.54, 'in', 2],[213.0, 3.8, 'mWm', 4],[221.0, 300, 'K', 4],[349.0, 300, 'K', 6],[352.0, 50, '%', 6],[380.0, 5, 'from', 7],[381.0, 20, 'W', 7],[445.0, 50, '%', 8],[452.0, 1200, 'K', 8],[516.0, 50, '%', 9]

TaSbRu
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139686, 139688)
 have predicted a high ZT of 1.54 in TaSbRu alloys at1200 K from first-principles without considering spin-orbit interaction,accurate electronic structure, details of phonon scattering, andenergy-dependent holes relaxation time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1.54, 'in', 0],[176.0, 3.8, 'mWm', 2],[184.0, 300, 'K', 2],[312.0, 300, 'K', 4],[315.0, 50, '%', 4],[343.0, 5, 'from', 5],[344.0, 20, 'W', 5],[408.0, 50, '%', 6],[415.0, 1200, 'K', 6],[479.0, 50, '%', 7]

K
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139697, 139697)
 have predicted a high ZT of 1.54 in TaSbRu alloys at1200 K from first-principles without considering spin-orbit interaction,accurate electronic structure, details of phonon scattering, andenergy-dependent holes relaxation time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 1.54, 'in', 0],[167.0, 3.8, 'mWm', 2],[175.0, 300, 'K', 2],[303.0, 300, 'K', 4],[306.0, 50, '%', 4],[334.0, 5, 'from', 5],[335.0, 20, 'W', 5],[399.0, 50, '%', 6],[406.0, 1200, 'K', 6],[470.0, 50, '%', 7]

Bi
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139773, 139773)
 Here, we report the details ofstructural stability and thermoelectric performance of Bi-Substituted p<missing VAR>-typeTaSbRu from first-principles calculations considering theses importantparameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1.54, 'in', 1],[91.0, 3.8, 'mWm', 1],[99.0, 300, 'K', 1],[227.0, 300, 'K', 3],[230.0, 50, '%', 3],[258.0, 5, 'from', 4],[259.0, 20, 'W', 4],[323.0, 50, '%', 5],[330.0, 1200, 'K', 5],[394.0, 50, '%', 6]

TaSbRu
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139782, 139784)
 Here, we report the details ofstructural stability and thermoelectric performance of Bi-Substituted p<missing VAR>-typeTaSbRu from first-principles calculations considering theses importantparameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1.54, 'in', 1],[80.0, 3.8, 'mWm', 1],[88.0, 300, 'K', 1],[216.0, 300, 'K', 3],[219.0, 50, '%', 3],[247.0, 5, 'from', 4],[248.0, 20, 'W', 4],[312.0, 50, '%', 5],[319.0, 1200, 'K', 5],[383.0, 50, '%', 6]

V
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139817, 139817)
 This indirect bandgap semiconductor (Eg0.8 e<missing VAR>V by T<missing VAR>B-mBJ+SOC) hashighly dispersive and degenerate valence bands, which lead to a maximum powerfactor, 3.8 mWm-1K-2 at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1.54, 'in', 2],[47.0, 3.8, 'mWm', 0],[55.0, 300, 'K', 0],[183.0, 300, 'K', 2],[186.0, 50, '%', 2],[214.0, 5, 'from', 3],[215.0, 20, 'W', 3],[279.0, 50, '%', 4],[286.0, 1200, 'K', 4],[350.0, 50, '%', 5]

B
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139822, 139822)
 This indirect bandgap semiconductor (Eg0.8 e<missing VAR>V by T<missing VAR>B-mBJ+SOC) hashighly dispersive and degenerate valence bands, which lead to a maximum powerfactor, 3.8 mWm-1K-2 at 300K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1.54, 'in', 2],[42.0, 3.8, 'mWm', 0],[50.0, 300, 'K', 0],[178.0, 300, 'K', 2],[181.0, 50, '%', 2],[209.0, 5, 'from', 3],[210.0, 20, 'W', 3],[274.0, 50, '%', 4],[281.0, 1200, 'K', 4],[345.0, 50, '%', 5]

C
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139830, 139830)
 This indirect bandgap semiconductor (Eg0.8 e<missing VAR>V by T<missing VAR>B-mBJ+SOC) hashighly dispersive and degenerate valence bands, which lead to a maximum powerfactor, 3.8 mWm-1K-2 at 300K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 1.54, 'in', 2],[34.0, 3.8, 'mWm', 0],[42.0, 300, 'K', 0],[170.0, 300, 'K', 2],[173.0, 50, '%', 2],[201.0, 5, 'from', 3],[202.0, 20, 'W', 3],[266.0, 50, '%', 4],[273.0, 1200, 'K', 4],[337.0, 50, '%', 5]

K
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139867, 139867)
 This indirect bandgap semiconductor (Eg0.8 e<missing VAR>V by T<missing VAR>B-mBJ+SOC) hashighly dispersive and degenerate valence bands, which lead to a maximum powerfactor, 3.8 mWm-1K-2 at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 1.54, 'in', 2],[3.0, 3.8, 'mWm', 0],[5.0, 300, 'K', 0],[133.0, 300, 'K', 2],[136.0, 50, '%', 2],[164.0, 5, 'from', 3],[165.0, 20, 'W', 3],[229.0, 50, '%', 4],[236.0, 1200, 'K', 4],[300.0, 50, '%', 5]

As
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139875, 139875)
 As Sb-5p<missing VAR> has a small contribution to the bandgapformation, the substitution of Bi on the Sb site does not cause significantchange to the electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 1.54, 'in', 3],[11.0, 3.8, 'mWm', 1],[3.0, 300, 'K', 1],[125.0, 300, 'K', 1],[128.0, 50, '%', 1],[156.0, 5, 'from', 2],[157.0, 20, 'W', 2],[221.0, 50, '%', 3],[228.0, 1200, 'K', 3],[292.0, 50, '%', 4]

Sb
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139877, 139877)
 As Sb-5p<missing VAR> has a small contribution to the bandgapformation, the substitution of Bi on the Sb site does not cause significantchange to the electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 1.54, 'in', 3],[13.0, 3.8, 'mWm', 1],[5.0, 300, 'K', 1],[123.0, 300, 'K', 1],[126.0, 50, '%', 1],[154.0, 5, 'from', 2],[155.0, 20, 'W', 2],[219.0, 50, '%', 3],[226.0, 1200, 'K', 3],[290.0, 50, '%', 4]

Bi
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139906, 139906)
 As Sb-5p<missing VAR> has a small contribution to the bandgapformation, the substitution of Bi on the Sb site does not cause significantchange to the electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 1.54, 'in', 3],[42.0, 3.8, 'mWm', 1],[34.0, 300, 'K', 1],[94.0, 300, 'K', 1],[97.0, 50, '%', 1],[125.0, 5, 'from', 2],[126.0, 20, 'W', 2],[190.0, 50, '%', 3],[197.0, 1200, 'K', 3],[261.0, 50, '%', 4]

Sb
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139912, 139912)
 As Sb-5p<missing VAR> has a small contribution to the bandgapformation, the substitution of Bi on the Sb site does not cause significantchange to the electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 1.54, 'in', 3],[48.0, 3.8, 'mWm', 1],[40.0, 300, 'K', 1],[88.0, 300, 'K', 1],[91.0, 50, '%', 1],[119.0, 5, 'from', 2],[120.0, 20, 'W', 2],[184.0, 50, '%', 3],[191.0, 1200, 'K', 3],[255.0, 50, '%', 4]

Bi
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139949, 139949)
 Although the Seebeck coefficient increasesby Bi due to slight changes in the bandgap, electrical conductivity, and hence,the power factor reduces to 3 m<missing VAR>W m<missing VAR>-1K-2 at 300K (50% Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 1.54, 'in', 4],[85.0, 3.8, 'mWm', 2],[77.0, 300, 'K', 2],[51.0, 300, 'K', 0],[54.0, 50, '%', 0],[82.0, 5, 'from', 1],[83.0, 20, 'W', 1],[147.0, 50, '%', 2],[154.0, 1200, 'K', 2],[218.0, 50, '%', 3]

W
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139990, 139990)
 Although the Seebeck coefficient increasesby Bi due to slight changes in the bandgap, electrical conductivity, and hence,the power factor reduces to 3 m<missing VAR>W m<missing VAR>-1K-2 at 300K (50% Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 1.54, 'in', 4],[126.0, 3.8, 'mWm', 2],[118.0, 300, 'K', 2],[10.0, 300, 'K', 0],[13.0, 50, '%', 0],[41.0, 5, 'from', 1],[42.0, 20, 'W', 1],[106.0, 50, '%', 2],[113.0, 1200, 'K', 2],[177.0, 50, '%', 3]

K
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(139995, 139995)
 Although the Seebeck coefficient increasesby Bi due to slight changes in the bandgap, electrical conductivity, and hence,the power factor reduces to 3 m<missing VAR>W m<missing VAR>-1K-2 at 300K (50% Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 1.54, 'in', 4],[131.0, 3.8, 'mWm', 2],[123.0, 300, 'K', 2],[5.0, 300, 'K', 0],[8.0, 50, '%', 0],[36.0, 5, 'from', 1],[37.0, 20, 'W', 1],[101.0, 50, '%', 2],[108.0, 1200, 'K', 2],[172.0, 50, '%', 3]

Bi
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(140006, 140006)
 Although the Seebeck coefficient increasesby Bi due to slight changes in the bandgap, electrical conductivity, and hence,the power factor reduces to 3 m<missing VAR>W m<missing VAR>-1K-2 at 300K (50% Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 1.54, 'in', 4],[142.0, 3.8, 'mWm', 2],[134.0, 300, 'K', 2],[6.0, 300, 'K', 0],[3.0, 50, '%', 0],[25.0, 5, 'from', 1],[26.0, 20, 'W', 1],[90.0, 50, '%', 2],[97.0, 1200, 'K', 2],[161.0, 50, '%', 3]

K
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(140036, 140036)
 On the other side,lattice thermal conductivity drops effectively to 5 from 20 W/m<missing VAR> K as Biintroduces a significant contribution in the acoustic phonon region andintensify phonon scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 1.54, 'in', 5],[172.0, 3.8, 'mWm', 3],[164.0, 300, 'K', 3],[36.0, 300, 'K', 1],[33.0, 50, '%', 1],[5.0, 5, 'from', 0],[4.0, 20, 'W', 0],[60.0, 50, '%', 1],[67.0, 1200, 'K', 1],[131.0, 50, '%', 2]

Bi
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(140040, 140040)
 On the other side,lattice thermal conductivity drops effectively to 5 from 20 W/m<missing VAR> K as Biintroduces a significant contribution in the acoustic phonon region andintensify phonon scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 1.54, 'in', 5],[176.0, 3.8, 'mWm', 3],[168.0, 300, 'K', 3],[40.0, 300, 'K', 1],[37.0, 50, '%', 1],[9.0, 5, 'from', 0],[8.0, 20, 'W', 0],[56.0, 50, '%', 1],[63.0, 1200, 'K', 1],[127.0, 50, '%', 2]

Bi
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(140086, 140086)
 Thus, ZT value is improved throughBi-substitution, reaching 1.1 (50% Bi) at 1200 K from 0.45 (pure TaSbRu) only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[402.0, 1.54, 'in', 6],[222.0, 3.8, 'mWm', 4],[214.0, 300, 'K', 4],[86.0, 300, 'K', 2],[83.0, 50, '%', 2],[55.0, 5, 'from', 1],[54.0, 20, 'W', 1],[10.0, 50, '%', 0],[17.0, 1200, 'K', 0],[81.0, 50, '%', 1]

Bi
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(140099, 140099)
 Thus, ZT value is improved throughBi-substitution, reaching 1.1 (50% Bi) at 1200 K from 0.45 (pure TaSbRu) only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[415.0, 1.54, 'in', 6],[235.0, 3.8, 'mWm', 4],[227.0, 300, 'K', 4],[99.0, 300, 'K', 2],[96.0, 50, '%', 2],[68.0, 5, 'from', 1],[67.0, 20, 'W', 1],[3.0, 50, '%', 0],[4.0, 1200, 'K', 0],[68.0, 50, '%', 1]

Ru
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(140114, 140114)
 Thus, ZT value is improved throughBi-substitution, reaching 1.1 (50% Bi) at 1200 K from 0.45 (pure TaSbRu) only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[430.0, 1.54, 'in', 6],[250.0, 3.8, 'mWm', 4],[242.0, 300, 'K', 4],[114.0, 300, 'K', 2],[111.0, 50, '%', 2],[83.0, 5, 'from', 1],[82.0, 20, 'W', 1],[18.0, 50, '%', 0],[11.0, 1200, 'K', 0],[53.0, 50, '%', 1]

Sb
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(140148, 140148)
Therefore, the present study suggests how to improve the TE performance ofSb-based half-Heusler compounds and TaSbRu (with 50% Bi) is a promisingmaterial for high-temperature applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[464.0, 1.54, 'in', 7],[284.0, 3.8, 'mWm', 5],[276.0, 300, 'K', 5],[148.0, 300, 'K', 3],[145.0, 50, '%', 3],[117.0, 5, 'from', 2],[116.0, 20, 'W', 2],[52.0, 50, '%', 1],[45.0, 1200, 'K', 1],[19.0, 50, '%', 0]

TaSbRu
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(140160, 140162)
Therefore, the present study suggests how to improve the TE performance ofSb-based half-Heusler compounds and TaSbRu (with 50% Bi) is a promisingmaterial for high-temperature applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[476.0, 1.54, 'in', 7],[296.0, 3.8, 'mWm', 5],[288.0, 300, 'K', 5],[160.0, 300, 'K', 3],[157.0, 50, '%', 3],[129.0, 5, 'from', 2],[128.0, 20, 'W', 2],[64.0, 50, '%', 1],[57.0, 1200, 'K', 1],[5.0, 50, '%', 0]

Bi
###Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study|Enamul Haque,Mostafizur Rahman,Parvin Sultana###
(140170, 140170)
Therefore, the present study suggests how to improve the TE performance ofSb-based half-Heusler compounds and TaSbRu (with 50% Bi) is a promisingmaterial for high-temperature applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[486.0, 1.54, 'in', 7],[306.0, 3.8, 'mWm', 5],[298.0, 300, 'K', 5],[170.0, 300, 'K', 3],[167.0, 50, '%', 3],[139.0, 5, 'from', 2],[138.0, 20, 'W', 2],[74.0, 50, '%', 1],[67.0, 1200, 'K', 1],[3.0, 50, '%', 0]

WS2/WSe2
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140221, 140227)
Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[485.0, 1, 'at', 7],[486.0, 400, 'K', 7]

C
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140281, 140281)
 We report a configuration strategy for improving the thermoelectric (TE)performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2based on the experimentally prepared WS2/WSe2 lateral superlattice (L<missing VAR>S)crystal.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 1, 'at', 6],[432.0, 400, 'K', 6]

WS2
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140284, 140286)
 We report a configuration strategy for improving the thermoelectric (TE)performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2based on the experimentally prepared WS2/WSe2 lateral superlattice (L<missing VAR>S)crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 1, 'at', 6],[427.0, 400, 'K', 6]

WS2/WSe2
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140299, 140305)
 We report a configuration strategy for improving the thermoelectric (TE)performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2based on the experimentally prepared WS2/WSe2 lateral superlattice (L<missing VAR>S)crystal.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[407.0, 1, 'at', 6],[408.0, 400, 'K', 6]

S
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140313, 140313)
 We report a configuration strategy for improving the thermoelectric (TE)performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2based on the experimentally prepared WS2/WSe2 lateral superlattice (L<missing VAR>S)crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 1, 'at', 6],[400.0, 400, 'K', 6]

WS2
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140370, 140372)
 On the basis of density function theory combined with Boltzmanntransport equation, we show that the TE figure of merit zT of monolayer WS2 isremarkably enhanced when forming into a WS2/WSe2 L<missing VAR>S crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 1, 'at', 5],[341.0, 400, 'K', 5]

WS2/WSe2
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140389, 140395)
 On the basis of density function theory combined with Boltzmanntransport equation, we show that the TE figure of merit zT of monolayer WS2 isremarkably enhanced when forming into a WS2/WSe2 L<missing VAR>S crystal.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[317.0, 1, 'at', 5],[318.0, 400, 'K', 5]

S
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140398, 140398)
 On the basis of density function theory combined with Boltzmanntransport equation, we show that the TE figure of merit zT of monolayer WS2 isremarkably enhanced when forming into a WS2/WSe2 L<missing VAR>S crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 1, 'at', 5],[315.0, 400, 'K', 5]

S
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140490, 140490)
 Electronic transport properties parallel (xx) andperpendicular (yy) to the superlattice period are highly symmetric for both p<missing VAR>-and n<missing VAR>-doped L<missing VAR>S owing to the nearly isotropic lifetime of charger carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 1, 'at', 3],[223.0, 400, 'K', 3]

S
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140564, 140564)
 Thespin-orbital effect causes a significant split of conduction band and leads tothree-fold degenerate sub-bands and high density of states (D<missing VAR>OS), which offersopportunity to obtain the high n<missing VAR>-type Seebeck coefficient (S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 1, 'at', 2],[149.0, 400, 'K', 2]

(S)
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140591, 140593)
 Thespin-orbital effect causes a significant split of conduction band and leads tothree-fold degenerate sub-bands and high density of states (D<missing VAR>OS), which offersopportunity to obtain the high n<missing VAR>-type Seebeck coefficient (S).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 1, 'at', 2],[120.0, 400, 'K', 2]

WS2
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140622, 140624)
 Interestingly,the separated degenerate sub-bands and upper conduction band in monolayer WS2form a remarkable stairlike D<missing VAR>OS, yielding a higher S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1, 'at', 1],[89.0, 400, 'K', 1]

OS
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140636, 140637)
 Interestingly,the separated degenerate sub-bands and upper conduction band in monolayer WS2form a remarkable stairlike D<missing VAR>OS, yielding a higher S.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 1, 'at', 1],[76.0, 400, 'K', 1]

S
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140646, 140646)
 Interestingly,the separated degenerate sub-bands and upper conduction band in monolayer WS2form a remarkable stairlike D<missing VAR>OS, yielding a higher S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1, 'at', 1],[67.0, 400, 'K', 1]

WS2/WSe2
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140718, 140724)
 The hole carriers withmuch higher mobility than electrons reveal the high p<missing VAR>-type power factor and thepotential to be good p<missing VAR>-type TE materials with optimal zT exceeds 1 at 400K inWS2/WSe2 L<missing VAR>S.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[6.0, 1, 'at', 0],[5.0, 400, 'K', 0]

S
###Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice|Yonglan Hu,Tie Yang,Dengfeng Li,Guangqian Ding,Chaochao Dun,Dandan Wu,Xiaotian Wang###
(140727, 140727)
 The hole carriers withmuch higher mobility than electrons reveal the high p<missing VAR>-type power factor and thepotential to be good p<missing VAR>-type TE materials with optimal zT exceeds 1 at 400K inWS2/WSe2 L<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1, 'at', 0],[14.0, 400, 'K', 0]

Si0.8Ge0.2
###Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity|Hosseini,S. Aria,Romano,Giuseppe,Greaney,P. Alex###
(140748, 140751)
Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity|Hosseini,S. Aria,Romano,Giuseppe,Greaney,P. Alex###
(140871, 140871)
 As such, the approach wouldnot be expected to provide significant performance gains in polycrystallinesemiconducting alloys, such as SixGe1-x, where mass disorder and grains providestrong phonon scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge1-x
###Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity|Hosseini,S. Aria,Romano,Giuseppe,Greaney,P. Alex###
(140914, 140917)
 As such, the approach wouldnot be expected to provide significant performance gains in polycrystallinesemiconducting alloys, such as SixGe1-x, where mass disorder and grains providestrong phonon scattering.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

In
###Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity|Hosseini,S. Aria,Romano,Giuseppe,Greaney,P. Alex###
(140940, 140940)
 In this manuscript, we demonstrate that the additionof nanoscale porosity to even ultrafine-grained Si0.8Ge0.2 may be worthwhile.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si0.8Ge0.2
###Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity|Hosseini,S. Aria,Romano,Giuseppe,Greaney,P. Alex###
(140972, 140975)
 In this manuscript, we demonstrate that the additionof nanoscale porosity to even ultrafine-grained Si0.8Ge0.2 may be worthwhile.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si0.8Ge0.2
###Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity|Hosseini,S. Aria,Romano,Giuseppe,Greaney,P. Alex###
(141016, 141019)
The semiclassical Boltzmann transport equation was used to model electrical andphonon transport in polycrystalline Si0.8Ge0.2 containing prismatic poresperpendicular to the transport current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity|Hosseini,S. Aria,Romano,Giuseppe,Greaney,P. Alex###
(141116, 141116)
 In this regime,ZT can be further enhanced by reducing carrier concentration to the electricaland electronic thermal conductivity and simultaneously increasing thermopower.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Bipolar conduction asymmetries lead to ultra-high thermoelectric power factor|Patrizio Graziosi,Zhen Li,Neophytos Neophytou###
(141320, 141320)
 In this work we show that the presence of strong transport asymmetriesbetween the conduction and valence bands can allow high phonon-limitedelectronic conductivity at finite Seebeck coefficient values, leading tolargely enhanced power factors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 3000, 'analytical', 5],[313.0, 120, 'possible', 5]

Sb
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141741, 141741)
Thermoelectric properties of Sb doped AlFe2B2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 300, ',', 1],[54.0, 773, ',', 1],[101.0, 1323, 'K', 2],[134.0, 1273, 'K', 3],[243.0, 0.03, 'at', 5],[245.0, 773, ',', 5],[378.0, 0.056, 'at', 8],[380.0, 773, ',', 8]

AlFe2B2
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141745, 141749)
Thermoelectric properties of Sb doped AlFe2B2.
Featurization terminated normally.
0,0,0,0,0.4,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 300, ',', 1],[46.0, 773, ',', 1],[93.0, 1323, 'K', 2],[126.0, 1273, 'K', 3],[235.0, 0.03, 'at', 5],[237.0, 773, ',', 5],[370.0, 0.056, 'at', 8],[372.0, 773, ',', 8]

In
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141752, 141752)
 In this work, thermoelectric properties of Al1.2Fe2B2 compoundwere investigated over a temperature range from 300,K to 773,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 300, ',', 0],[43.0, 773, ',', 0],[90.0, 1323, 'K', 1],[123.0, 1273, 'K', 2],[232.0, 0.03, 'at', 4],[234.0, 773, ',', 4],[367.0, 0.056, 'at', 7],[369.0, 773, ',', 7]

Al1.2Fe2B2
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141765, 141770)
 In this work, thermoelectric properties of Al1.2Fe2B2 compoundwere investigated over a temperature range from 300,K to 773,K.
Featurization terminated normally.
0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0.23076923076923075,0,0,0,0,0,0,0,0,0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 300, ',', 0],[25.0, 773, ',', 0],[72.0, 1323, 'K', 1],[105.0, 1273, 'K', 2],[214.0, 0.03, 'at', 4],[216.0, 773, ',', 4],[349.0, 0.056, 'at', 7],[351.0, 773, ',', 7]

K
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141791, 141791)
 In this work, thermoelectric properties of Al1.2Fe2B2 compoundwere investigated over a temperature range from 300,K to 773,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 300, ',', 0],[4.0, 773, ',', 0],[51.0, 1323, 'K', 1],[84.0, 1273, 'K', 2],[193.0, 0.03, 'at', 4],[195.0, 773, ',', 4],[328.0, 0.056, 'at', 7],[330.0, 773, ',', 7]

K
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141797, 141797)
 In this work, thermoelectric properties of Al1.2Fe2B2 compoundwere investigated over a temperature range from 300,K to 773,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 300, ',', 0],[2.0, 773, ',', 0],[45.0, 1323, 'K', 1],[78.0, 1273, 'K', 2],[187.0, 0.03, 'at', 4],[189.0, 773, ',', 4],[322.0, 0.056, 'at', 7],[324.0, 773, ',', 7]

Al1.2Fe2B2
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141801, 141806)
Al1.2Fe2B2 compound was produced by vacuum arc melting of Al, Fe,and B followed by annealing at 1323 K under argon atmosphere.
Featurization terminated normally.
0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0.23076923076923075,0,0,0,0,0,0,0,0,0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 300, ',', 1],[6.0, 773, ',', 1],[36.0, 1323, 'K', 0],[69.0, 1273, 'K', 1],[178.0, 0.03, 'at', 3],[180.0, 773, ',', 3],[313.0, 0.056, 'at', 6],[315.0, 773, ',', 6]

Al
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141824, 141824)
Al1.2Fe2B2 compound was produced by vacuum arc melting of Al, Fe,and B followed by annealing at 1323 K under argon atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 300, ',', 1],[29.0, 773, ',', 1],[18.0, 1323, 'K', 0],[51.0, 1273, 'K', 1],[160.0, 0.03, 'at', 3],[162.0, 773, ',', 3],[295.0, 0.056, 'at', 6],[297.0, 773, ',', 6]

Fe
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141827, 141827)
Al1.2Fe2B2 compound was produced by vacuum arc melting of Al, Fe,and B followed by annealing at 1323 K under argon atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 300, ',', 1],[32.0, 773, ',', 1],[15.0, 1323, 'K', 0],[48.0, 1273, 'K', 1],[157.0, 0.03, 'at', 3],[159.0, 773, ',', 3],[292.0, 0.056, 'at', 6],[294.0, 773, ',', 6]

B
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141833, 141833)
Al1.2Fe2B2 compound was produced by vacuum arc melting of Al, Fe,and B followed by annealing at 1323 K under argon atmosphere.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 300, ',', 1],[38.0, 773, ',', 1],[9.0, 1323, 'K', 0],[42.0, 1273, 'K', 1],[151.0, 0.03, 'at', 3],[153.0, 773, ',', 3],[286.0, 0.056, 'at', 6],[288.0, 773, ',', 6]

Al1.2Fe2B2
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141895, 141900)
 The hot-pressed alloy predominantly contained Al1.2Fe2B2phase with a small fraction of FeB, which decreases further upon 0.1 % Sbdoping in Al1.2Fe2B2.
Featurization terminated normally.
0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0.23076923076923075,0,0,0,0,0,0,0,0,0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 300, ',', 3],[100.0, 773, ',', 3],[53.0, 1323, 'K', 2],[20.0, 1273, 'K', 1],[84.0, 0.03, 'at', 1],[86.0, 773, ',', 1],[219.0, 0.056, 'at', 4],[221.0, 773, ',', 4]

FeB
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141915, 141916)
 The hot-pressed alloy predominantly contained Al1.2Fe2B2phase with a small fraction of FeB, which decreases further upon 0.1 % Sbdoping in Al1.2Fe2B2.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 300, ',', 3],[120.0, 773, ',', 3],[73.0, 1323, 'K', 2],[40.0, 1273, 'K', 1],[68.0, 0.03, 'at', 1],[70.0, 773, ',', 1],[203.0, 0.056, 'at', 4],[205.0, 773, ',', 4]

Sb
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141931, 141931)
 The hot-pressed alloy predominantly contained Al1.2Fe2B2phase with a small fraction of FeB, which decreases further upon 0.1 % Sbdoping in Al1.2Fe2B2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 300, ',', 3],[136.0, 773, ',', 3],[89.0, 1323, 'K', 2],[56.0, 1273, 'K', 1],[53.0, 0.03, 'at', 1],[55.0, 773, ',', 1],[188.0, 0.056, 'at', 4],[190.0, 773, ',', 4]

Al1.2Fe2B2
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141938, 141943)
 The hot-pressed alloy predominantly contained Al1.2Fe2B2phase with a small fraction of FeB, which decreases further upon 0.1 % Sbdoping in Al1.2Fe2B2.
Featurization terminated normally.
0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0.23076923076923075,0,0,0,0,0,0,0,0,0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 300, ',', 3],[143.0, 773, ',', 3],[96.0, 1323, 'K', 2],[63.0, 1273, 'K', 1],[41.0, 0.03, 'at', 1],[43.0, 773, ',', 1],[176.0, 0.056, 'at', 4],[178.0, 773, ',', 4]

Al1.2Fe2B2
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141950, 141955)
 The pristine Al1.2Fe2B2 exhibitsn<missing VAR>-type conductivity with a maximum figure of merit (zT) of 0.03 at 773,K.
Featurization terminated normally.
0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0.23076923076923075,0,0,0,0,0,0,0,0,0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 300, ',', 4],[155.0, 773, ',', 4],[108.0, 1323, 'K', 3],[75.0, 1273, 'K', 2],[29.0, 0.03, 'at', 0],[31.0, 773, ',', 0],[164.0, 0.056, 'at', 3],[166.0, 773, ',', 3]

K
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141988, 141988)
 The pristine Al1.2Fe2B2 exhibitsn<missing VAR>-type conductivity with a maximum figure of merit (zT) of 0.03 at 773,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 300, ',', 4],[193.0, 773, ',', 4],[146.0, 1323, 'K', 3],[113.0, 1273, 'K', 2],[4.0, 0.03, 'at', 0],[2.0, 773, ',', 0],[131.0, 0.056, 'at', 3],[133.0, 773, ',', 3]

Sb
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(141994, 141994)
 TheSb doping improves the Seebeck coefficient at high temperatures and alsoreduces the phonon thermal conductivity across the temperature range studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 300, ',', 5],[199.0, 773, ',', 5],[152.0, 1323, 'K', 4],[119.0, 1273, 'K', 3],[10.0, 0.03, 'at', 1],[8.0, 773, ',', 1],[125.0, 0.056, 'at', 2],[127.0, 773, ',', 2]

Fe
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(142080, 142080)
The decrease in phonon thermal conductivity is attributed to the point-defectphonon scattering due to mass fluctuation between the Fe and Sb atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 300, ',', 6],[285.0, 773, ',', 6],[238.0, 1323, 'K', 5],[205.0, 1273, 'K', 4],[96.0, 0.03, 'at', 2],[94.0, 773, ',', 2],[39.0, 0.056, 'at', 1],[41.0, 773, ',', 1]

Sb
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(142084, 142084)
The decrease in phonon thermal conductivity is attributed to the point-defectphonon scattering due to mass fluctuation between the Fe and Sb atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 300, ',', 6],[289.0, 773, ',', 6],[242.0, 1323, 'K', 5],[209.0, 1273, 'K', 4],[100.0, 0.03, 'at', 2],[98.0, 773, ',', 2],[35.0, 0.056, 'at', 1],[37.0, 773, ',', 1]

Sb
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(142097, 142097)
 The 0.1at% Sb doping at the Fe site results in improved zT of 0.056 at 773,K inspite of its limited dissolution in Al1.2Fe2B2 and forms FeSb2secondary phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 300, ',', 7],[302.0, 773, ',', 7],[255.0, 1323, 'K', 6],[222.0, 1273, 'K', 5],[113.0, 0.03, 'at', 3],[111.0, 773, ',', 3],[22.0, 0.056, 'at', 0],[24.0, 773, ',', 0]

Fe
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(142105, 142105)
 The 0.1at% Sb doping at the Fe site results in improved zT of 0.056 at 773,K inspite of its limited dissolution in Al1.2Fe2B2 and forms FeSb2secondary phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 300, ',', 7],[310.0, 773, ',', 7],[263.0, 1323, 'K', 6],[230.0, 1273, 'K', 5],[121.0, 0.03, 'at', 3],[119.0, 773, ',', 3],[14.0, 0.056, 'at', 0],[16.0, 773, ',', 0]

K
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(142123, 142123)
 The 0.1at% Sb doping at the Fe site results in improved zT of 0.056 at 773,K inspite of its limited dissolution in Al1.2Fe2B2 and forms FeSb2secondary phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 300, ',', 7],[328.0, 773, ',', 7],[281.0, 1323, 'K', 6],[248.0, 1273, 'K', 5],[139.0, 0.03, 'at', 3],[137.0, 773, ',', 3],[4.0, 0.056, 'at', 0],[2.0, 773, ',', 0]

Al1.2Fe2B2
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(142140, 142145)
 The 0.1at% Sb doping at the Fe site results in improved zT of 0.056 at 773,K inspite of its limited dissolution in Al1.2Fe2B2 and forms FeSb2secondary phase.
Featurization terminated normally.
0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0.23076923076923075,0,0,0,0,0,0,0,0,0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 300, ',', 7],[345.0, 773, ',', 7],[298.0, 1323, 'K', 6],[265.0, 1273, 'K', 5],[156.0, 0.03, 'at', 3],[154.0, 773, ',', 3],[21.0, 0.056, 'at', 0],[19.0, 773, ',', 0]

FeSb2
###Thermoelectric properties of Sb doped AlFe$_2$B$_2$|Duraisamy Sivaprahasam,Ashutosh Kumar,Babu Jayachandran,Raghavan Gopalan###
(142151, 142153)
 The 0.1at% Sb doping at the Fe site results in improved zT of 0.056 at 773,K inspite of its limited dissolution in Al1.2Fe2B2 and forms FeSb2secondary phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 300, ',', 7],[356.0, 773, ',', 7],[309.0, 1323, 'K', 6],[276.0, 1273, 'K', 5],[167.0, 0.03, 'at', 3],[165.0, 773, ',', 3],[32.0, 0.056, 'at', 0],[30.0, 773, ',', 0]

Si
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142189, 142189)
Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 4, 'nm', 5],[210.0, 4, 'nm', 5],[225.0, 30, '%', 5],[229.0, 29, '%', 5],[250.0, 0.8, 'nm', 5]

Ge
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142193, 142193)
Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 4, 'nm', 5],[206.0, 4, 'nm', 5],[221.0, 30, '%', 5],[225.0, 29, '%', 5],[246.0, 0.8, 'nm', 5]

N
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142203, 142203)
 Porous nanowires (NWs) with tunable thermal conductance are examined as acandidate for thermoelectric (TE) devices with high efficiency (ZT).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 4, 'nm', 4],[196.0, 4, 'nm', 4],[211.0, 30, '%', 4],[215.0, 29, '%', 4],[236.0, 0.8, 'nm', 4]

Si
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142258, 142258)
 Thermalconductance of porous Si and Ge NWs is calculated using the complete phonondispersion obtained from a modified valence force field (M<missing VAR>VFF) model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 4, 'nm', 3],[141.0, 4, 'nm', 3],[156.0, 30, '%', 3],[160.0, 29, '%', 3],[181.0, 0.8, 'nm', 3]

Ge
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142262, 142262)
 Thermalconductance of porous Si and Ge NWs is calculated using the complete phonondispersion obtained from a modified valence force field (M<missing VAR>VFF) model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 4, 'nm', 3],[137.0, 4, 'nm', 3],[152.0, 30, '%', 3],[156.0, 29, '%', 3],[177.0, 0.8, 'nm', 3]

N
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142264, 142264)
 Thermalconductance of porous Si and Ge NWs is calculated using the complete phonondispersion obtained from a modified valence force field (M<missing VAR>VFF) model.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 4, 'nm', 3],[135.0, 4, 'nm', 3],[150.0, 30, '%', 3],[154.0, 29, '%', 3],[175.0, 0.8, 'nm', 3]

F
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142300, 142300)
 Thermalconductance of porous Si and Ge NWs is calculated using the complete phonondispersion obtained from a modified valence force field (M<missing VAR>VFF) model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 4, 'nm', 3],[99.0, 4, 'nm', 3],[114.0, 30, '%', 3],[118.0, 29, '%', 3],[139.0, 0.8, 'nm', 3]

Si
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142358, 142358)
 [100] Si and GeNWs show similar percentage reduction in sigmal<missing VAR> for the same amount ofporosity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 4, 'nm', 1],[41.0, 4, 'nm', 1],[56.0, 30, '%', 1],[60.0, 29, '%', 1],[81.0, 0.8, 'nm', 1]

Ge
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142362, 142362)
 [100] Si and GeNWs show similar percentage reduction in sigmal<missing VAR> for the same amount ofporosity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 4, 'nm', 1],[37.0, 4, 'nm', 1],[52.0, 30, '%', 1],[56.0, 29, '%', 1],[77.0, 0.8, 'nm', 1]

N
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142365, 142365)
 [100] Si and GeNWs show similar percentage reduction in sigmal<missing VAR> for the same amount ofporosity.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 4, 'nm', 1],[34.0, 4, 'nm', 1],[49.0, 30, '%', 1],[53.0, 29, '%', 1],[74.0, 0.8, 'nm', 1]

Si
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142401, 142401)
 A 4nm times 4nm Si (Ge) NW shows sim 30% (29%) reduction insigmal<missing VAR> for a hole of radius 0.8nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 4, 'nm', 0],[2.0, 4, 'nm', 0],[13.0, 30, '%', 0],[17.0, 29, '%', 0],[38.0, 0.8, 'nm', 0]

(Ge)
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142403, 142405)
 A 4nm times 4nm Si (Ge) NW shows sim 30% (29%) reduction insigmal<missing VAR> for a hole of radius 0.8nm.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 4, 'nm', 0],[4.0, 4, 'nm', 0],[9.0, 30, '%', 0],[13.0, 29, '%', 0],[34.0, 0.8, 'nm', 0]

NW
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142407, 142408)
 A 4nm times 4nm Si (Ge) NW shows sim 30% (29%) reduction insigmal<missing VAR> for a hole of radius 0.8nm.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 4, 'nm', 0],[8.0, 4, 'nm', 0],[6.0, 30, '%', 0],[10.0, 29, '%', 0],[31.0, 0.8, 'nm', 0]

SiN
###Tuning lattice thermal conductance by porosity control in ultra-scaled Si and Ge nanowires|Abhijeet Paul,Gerhard Klimeck###
(142462, 142463)
 The model predicts an anisotropicreduction in sigmal<missing VAR> in SiNWs, with [111] showing maximum reductionfollowed by [100] and [110] for a similar hole radius.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 4, 'nm', 1],[63.0, 4, 'nm', 1],[48.0, 30, '%', 1],[44.0, 29, '%', 1],[23.0, 0.8, 'nm', 1]

(Bi2)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142558, 142561)
Phase Stability, Structures and Properties of the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> Natural Superlattices.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 0.7, ',', 2],[166.0, 0.7, ',', 3],[239.0, 2, ',', 4],[338.0, 1.05, 'in', 5],[339.0, 9, 'T', 5],[369.0, 0.63, ',', 6],[393.0, 0.2, 'at', 6],[394.0, 250, 'K', 6]

(Bi2Te3)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142563, 142568)
Phase Stability, Structures and Properties of the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> Natural Superlattices.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 0.7, ',', 2],[159.0, 0.7, ',', 3],[232.0, 2, ',', 4],[331.0, 1.05, 'in', 5],[332.0, 9, 'T', 5],[362.0, 0.63, ',', 6],[386.0, 0.2, 'at', 6],[387.0, 250, 'K', 6]

(Bi2)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142586, 142589)
 The phase stability of the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> natural superlattices has beeninvestigated through the low temperature solid state synthesis of a number ofnew binary BixTe1-x compositions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.7, ',', 1],[138.0, 0.7, ',', 2],[211.0, 2, ',', 3],[310.0, 1.05, 'in', 4],[311.0, 9, 'T', 4],[341.0, 0.63, ',', 5],[365.0, 0.2, 'at', 5],[366.0, 250, 'K', 5]

(Bi2Te3)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142591, 142596)
 The phase stability of the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> natural superlattices has beeninvestigated through the low temperature solid state synthesis of a number ofnew binary BixTe1-x compositions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.7, ',', 1],[131.0, 0.7, ',', 2],[204.0, 2, ',', 3],[303.0, 1.05, 'in', 4],[304.0, 9, 'T', 4],[334.0, 0.63, ',', 5],[358.0, 0.2, 'at', 5],[359.0, 250, 'K', 5]

Te1-x
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142638, 142641)
 The phase stability of the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> natural superlattices has beeninvestigated through the low temperature solid state synthesis of a number ofnew binary BixTe1-x compositions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[38.0, 0.7, ',', 1],[86.0, 0.7, ',', 2],[159.0, 2, ',', 3],[258.0, 1.05, 'in', 4],[259.0, 9, 'T', 4],[289.0, 0.63, ',', 5],[313.0, 0.2, 'at', 5],[314.0, 250, 'K', 5]

Bi
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142736, 142736)
For x<missing VAR> > 0.70, mixtures of elemental Bi and an almost constant composition(Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> phase are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 0.7, ',', 1],[9.0, 0.7, ',', 0],[64.0, 2, ',', 1],[163.0, 1.05, 'in', 2],[164.0, 9, 'T', 2],[194.0, 0.63, ',', 3],[218.0, 0.2, 'at', 3],[219.0, 250, 'K', 3]

(Bi2)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142749, 142752)
For x<missing VAR> > 0.70, mixtures of elemental Bi and an almost constant composition(Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> phase are observed.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.7, ',', 1],[22.0, 0.7, ',', 0],[48.0, 2, ',', 1],[147.0, 1.05, 'in', 2],[148.0, 9, 'T', 2],[178.0, 0.63, ',', 3],[202.0, 0.2, 'at', 3],[203.0, 250, 'K', 3]

(Bi2Te3)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142754, 142759)
For x<missing VAR> > 0.70, mixtures of elemental Bi and an almost constant composition(Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> phase are observed.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0.7, ',', 1],[27.0, 0.7, ',', 0],[41.0, 2, ',', 1],[140.0, 1.05, 'in', 2],[141.0, 9, 'T', 2],[171.0, 0.63, ',', 3],[195.0, 0.2, 'at', 3],[196.0, 250, 'K', 3]

Bi2Te
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142792, 142794)
 Rietveld analysis of synchrotron X<missing VAR>-raypowder diffraction data collected on Bi2Te (m<missing VAR>  2, n<missing VAR>  1) revealed substantialinterchange of Bi and Te between the Bi2 and Bi2Te3 blocks, demonstrating thatthe block compositions are variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.7, ',', 2],[65.0, 0.7, ',', 1],[6.0, 2, ',', 0],[105.0, 1.05, 'in', 1],[106.0, 9, 'T', 1],[136.0, 0.63, ',', 2],[160.0, 0.2, 'at', 2],[161.0, 250, 'K', 2]

Bi
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142818, 142818)
 Rietveld analysis of synchrotron X<missing VAR>-raypowder diffraction data collected on Bi2Te (m<missing VAR>  2, n<missing VAR>  1) revealed substantialinterchange of Bi and Te between the Bi2 and Bi2Te3 blocks, demonstrating thatthe block compositions are variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 0.7, ',', 2],[91.0, 0.7, ',', 1],[18.0, 2, ',', 0],[81.0, 1.05, 'in', 1],[82.0, 9, 'T', 1],[112.0, 0.63, ',', 2],[136.0, 0.2, 'at', 2],[137.0, 250, 'K', 2]

Te
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142822, 142822)
 Rietveld analysis of synchrotron X<missing VAR>-raypowder diffraction data collected on Bi2Te (m<missing VAR>  2, n<missing VAR>  1) revealed substantialinterchange of Bi and Te between the Bi2 and Bi2Te3 blocks, demonstrating thatthe block compositions are variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0.7, ',', 2],[95.0, 0.7, ',', 1],[22.0, 2, ',', 0],[77.0, 1.05, 'in', 1],[78.0, 9, 'T', 1],[108.0, 0.63, ',', 2],[132.0, 0.2, 'at', 2],[133.0, 250, 'K', 2]

Bi2
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142828, 142829)
 Rietveld analysis of synchrotron X<missing VAR>-raypowder diffraction data collected on Bi2Te (m<missing VAR>  2, n<missing VAR>  1) revealed substantialinterchange of Bi and Te between the Bi2 and Bi2Te3 blocks, demonstrating thatthe block compositions are variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 0.7, ',', 2],[101.0, 0.7, ',', 1],[28.0, 2, ',', 0],[70.0, 1.05, 'in', 1],[71.0, 9, 'T', 1],[101.0, 0.63, ',', 2],[125.0, 0.2, 'at', 2],[126.0, 250, 'K', 2]

Bi2Te3
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142833, 142836)
 Rietveld analysis of synchrotron X<missing VAR>-raypowder diffraction data collected on Bi2Te (m<missing VAR>  2, n<missing VAR>  1) revealed substantialinterchange of Bi and Te between the Bi2 and Bi2Te3 blocks, demonstrating thatthe block compositions are variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.7, ',', 2],[106.0, 0.7, ',', 1],[33.0, 2, ',', 0],[63.0, 1.05, 'in', 1],[64.0, 9, 'T', 1],[94.0, 0.63, ',', 2],[118.0, 0.2, 'at', 2],[119.0, 250, 'K', 2]

V
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142919, 142919)
 The maximum Seebeckcoefficient is +80 muV K-1 for x<missing VAR>  0.63, leading to an estimated thermoelectricfigure of merit, zT  0.2 at 250 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 0.7, ',', 4],[192.0, 0.7, ',', 3],[119.0, 2, ',', 2],[20.0, 1.05, 'in', 1],[19.0, 9, 'T', 1],[11.0, 0.63, ',', 0],[35.0, 0.2, 'at', 0],[36.0, 250, 'K', 0]

K
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(142921, 142921)
 The maximum Seebeckcoefficient is +80 muV K-1 for x<missing VAR>  0.63, leading to an estimated thermoelectricfigure of merit, zT  0.2 at 250 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 0.7, ',', 4],[194.0, 0.7, ',', 3],[121.0, 2, ',', 2],[22.0, 1.05, 'in', 1],[21.0, 9, 'T', 1],[9.0, 0.63, ',', 0],[33.0, 0.2, 'at', 0],[34.0, 250, 'K', 0]

TiNiSn/HfNiSn
###Reduced thermal conductivity of TiNiSn/HfNiSn superlattices|Paulina Hołuj,Christoph Euler,Benjamin Balke,Ute Kolb,Gregor Fiedler,Mathis M. Müller,Tino Jaeger,Peter Kratzer,Gerhard Jakob###
(142974, 142980)
Reduced thermal conductivity of TiNiSn/HfNiSn superlattices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[196.0, 3, 'nm', 5]

C
###Reduced thermal conductivity of TiNiSn/HfNiSn superlattices|Paulina Hołuj,Christoph Euler,Benjamin Balke,Ute Kolb,Gregor Fiedler,Mathis M. Müller,Tino Jaeger,Peter Kratzer,Gerhard Jakob###
(143051, 143051)
 We report a systematic and significant reduction of the cross-planethermal conductivity in a model system consisting of D<missing VAR>C sputtered TiNiSn andHfNiSn half-Heusler superlattices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 3, 'nm', 3]

TiNiSn
###Reduced thermal conductivity of TiNiSn/HfNiSn superlattices|Paulina Hołuj,Christoph Euler,Benjamin Balke,Ute Kolb,Gregor Fiedler,Mathis M. Müller,Tino Jaeger,Peter Kratzer,Gerhard Jakob###
(143055, 143057)
 We report a systematic and significant reduction of the cross-planethermal conductivity in a model system consisting of D<missing VAR>C sputtered TiNiSn andHfNiSn half-Heusler superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 3, 'nm', 3]

HfNiSn
###Reduced thermal conductivity of TiNiSn/HfNiSn superlattices|Paulina Hołuj,Christoph Euler,Benjamin Balke,Ute Kolb,Gregor Fiedler,Mathis M. Müller,Tino Jaeger,Peter Kratzer,Gerhard Jakob###
(143062, 143064)
 We report a systematic and significant reduction of the cross-planethermal conductivity in a model system consisting of D<missing VAR>C sputtered TiNiSn andHfNiSn half-Heusler superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 3, 'nm', 3]

TiNiSn
###Reduced thermal conductivity of TiNiSn/HfNiSn superlattices|Paulina Hołuj,Christoph Euler,Benjamin Balke,Ute Kolb,Gregor Fiedler,Mathis M. Müller,Tino Jaeger,Peter Kratzer,Gerhard Jakob###
(143280, 143282)
 We also present an enhanced ZT value for all investigatedsuperlattices compared to the single TiNiSn and HfNiSn films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 3, 'nm', 2]

HfNiSn
###Reduced thermal conductivity of TiNiSn/HfNiSn superlattices|Paulina Hołuj,Christoph Euler,Benjamin Balke,Ute Kolb,Gregor Fiedler,Mathis M. Müller,Tino Jaeger,Peter Kratzer,Gerhard Jakob###
(143286, 143288)
 We also present an enhanced ZT value for all investigatedsuperlattices compared to the single TiNiSn and HfNiSn films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 3, 'nm', 2]

BiSbSeTe2
###First-principles study of the thermoelectric properties of quaternary tetradymite BiSbSeTe2|Z. Z. Zhou,H. J. Liu,D. D. Fan,B. Y. Zhao,C. Y. Sheng,G. H. Cao,S. Huang###
(143321, 143325)
First-principles study of the thermoelectric properties of quaternary tetradymite BiSbSeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 500, 'K', 5]

BiSbSeTe2
###First-principles study of the thermoelectric properties of quaternary tetradymite BiSbSeTe2|Z. Z. Zhou,H. J. Liu,D. D. Fan,B. Y. Zhao,C. Y. Sheng,G. H. Cao,S. Huang###
(143347, 143351)
 The electronic and phonon transport properties of quaternary tetradymiteBiSbSeTe2 are investigated using first-principles approach and Boltzmanntransport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 500, 'K', 4]

Bi2Te3
###First-principles study of the thermoelectric properties of quaternary tetradymite BiSbSeTe2|Z. Z. Zhou,H. J. Liu,D. D. Fan,B. Y. Zhao,C. Y. Sheng,G. H. Cao,S. Huang###
(143383, 143386)
 Unlike the binary counterpart Bi2Te3, we obtain a pair ofRashba splitting bands induced by the absence of inversion center.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 500, 'K', 3]

BiSbSeTe2
###First-principles study of the thermoelectric properties of quaternary tetradymite BiSbSeTe2|Z. Z. Zhou,H. J. Liu,D. D. Fan,B. Y. Zhao,C. Y. Sheng,G. H. Cao,S. Huang###
(143476, 143480)
 Besides, we find an ultralow lattice thermalconductivity of BiSbSeTe2, especially along the interlayer direction, which canbe traced to the extremely small phonon relaxation time mainly induced by themixed covalent bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 500, 'K', 1]

As
###First-principles study of the thermoelectric properties of quaternary tetradymite BiSbSeTe2|Z. Z. Zhou,H. J. Liu,D. D. Fan,B. Y. Zhao,C. Y. Sheng,G. H. Cao,S. Huang###
(143533, 143533)
 As a consequence, a considerably large ZT value of 2.0can be obtained at 500 K, indicating that the unique lattice structure ofBiSbSeTe2 caused by isoelectronic substitution could be an advantage toachieving high thermoelectric performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 500, 'K', 0]

BiSbSeTe2
###First-principles study of the thermoelectric properties of quaternary tetradymite BiSbSeTe2|Z. Z. Zhou,H. J. Liu,D. D. Fan,B. Y. Zhao,C. Y. Sheng,G. H. Cao,S. Huang###
(143581, 143585)
 As a consequence, a considerably large ZT value of 2.0can be obtained at 500 K, indicating that the unique lattice structure ofBiSbSeTe2 caused by isoelectronic substitution could be an advantage toachieving high thermoelectric performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 500, 'K', 0]

In
###Thermal conductivity reduction by acoustic Mie resonance in nanoparticles|Brian Slovick,Srini Krishnamurthy###
(143777, 143777)
 Insemiconductor alloys, where the spectral thermal conductivity is known, ourmodel can explain the steep reductions in thermal conductivity observedpreviously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg2Si
###High-throughput exploration of alloying as design strategy for thermoelectrics|Sandip Bhattacharya,Georg K. H. Madsen###
(144064, 144066)
 We first confirm the effect in antifluorite Mg2Si and Mg2Gewhere an increased power factor by alloying with Mg2Sn is experimentallyestablished.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg2Ge
###High-throughput exploration of alloying as design strategy for thermoelectrics|Sandip Bhattacharya,Georg K. H. Madsen###
(144070, 144072)
 We first confirm the effect in antifluorite Mg2Si and Mg2Gewhere an increased power factor by alloying with Mg2Sn is experimentallyestablished.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg2Sn
###High-throughput exploration of alloying as design strategy for thermoelectrics|Sandip Bhattacharya,Georg K. H. Madsen###
(144091, 144093)
 We first confirm the effect in antifluorite Mg2Si and Mg2Gewhere an increased power factor by alloying with Mg2Sn is experimentallyestablished.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoSi2
###High-throughput exploration of alloying as design strategy for thermoelectrics|Sandip Bhattacharya,Georg K. H. Madsen###
(144155, 144157)
 Among these, hexagonal MoSi2 and orthorhombic Ca2Si and Ca2Ge havethe highest increment in zT with volume.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca2Si
###High-throughput exploration of alloying as design strategy for thermoelectrics|Sandip Bhattacharya,Georg K. H. Madsen###
(144163, 144165)
 Among these, hexagonal MoSi2 and orthorhombic Ca2Si and Ca2Ge havethe highest increment in zT with volume.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca2Ge
###High-throughput exploration of alloying as design strategy for thermoelectrics|Sandip Bhattacharya,Georg K. H. Madsen###
(144169, 144171)
 Among these, hexagonal MoSi2 and orthorhombic Ca2Si and Ca2Ge havethe highest increment in zT with volume.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca2Si
###High-throughput exploration of alloying as design strategy for thermoelectrics|Sandip Bhattacharya,Georg K. H. Madsen###
(144260, 144262)
 We find that for Ca2Si and Ca2Ge the solid solutionswith the isostructural Ca2Sn readily forms even at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca2Ge
###High-throughput exploration of alloying as design strategy for thermoelectrics|Sandip Bhattacharya,Georg K. H. Madsen###
(144266, 144268)
 We find that for Ca2Si and Ca2Ge the solid solutionswith the isostructural Ca2Sn readily forms even at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca2Sn
###High-throughput exploration of alloying as design strategy for thermoelectrics|Sandip Bhattacharya,Georg K. H. Madsen###
(144283, 144285)
 We find that for Ca2Si and Ca2Ge the solid solutionswith the isostructural Ca2Sn readily forms even at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Basic concepts in single-molecule electronics|C J Lambert###
(144414, 144414)
 The key quantity of interest is the transmission coefficient T(E),which yields the electrical conductance, current-voltage relations, thethermopower S and the thermoelectric figure of merit ZT of single-moleculedevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Basic concepts in single-molecule electronics|C J Lambert###
(144462, 144462)
 Since T(E) is strongly affected by quantum interference (Q<missing VAR>I), threemanifestations of Q<missing VAR>I in single-molecules are discussed, namely Mach-Zehnderinterferometry, Breit-Wigner resonances and Fano resonances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Basic concepts in single-molecule electronics|C J Lambert###
(144474, 144474)
 Since T(E) is strongly affected by quantum interference (Q<missing VAR>I), threemanifestations of Q<missing VAR>I in single-molecules are discussed, namely Mach-Zehnderinterferometry, Breit-Wigner resonances and Fano resonances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Basic concepts in single-molecule electronics|C J Lambert###
(144519, 144519)
 A simple MATLABcode is provided, which allows the novice reader to explore Q<missing VAR>I inmulti-branched structures described by a tight-binding (Huckel) Hamiltonian.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Basic concepts in single-molecule electronics|C J Lambert###
(144544, 144544)
 A simple MATLABcode is provided, which allows the novice reader to explore Q<missing VAR>I inmulti-branched structures described by a tight-binding (Huckel) Hamiltonian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face|Malgorzata Wierzbowska,Adam Dominiak###
(144648, 144648)
Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 4, 'H', 0],[124.0, 4, 'H', 3]

F
###Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face|Malgorzata Wierzbowska,Adam Dominiak###
(144653, 144653)
Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 4, 'H', 0],[119.0, 4, 'H', 3]

C
###Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face|Malgorzata Wierzbowska,Adam Dominiak###
(144677, 144677)
Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 4, 'H', 0],[95.0, 4, 'H', 3]

H
###Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face|Malgorzata Wierzbowska,Adam Dominiak###
(144690, 144690)
 Graphene halfly doped with H or F possesses local magnetization at theundoped C sites.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 4, 'H', 1],[82.0, 4, 'H', 2]

F
###Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face|Malgorzata Wierzbowska,Adam Dominiak###
(144694, 144694)
 Graphene halfly doped with H or F possesses local magnetization at theundoped C sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 4, 'H', 1],[78.0, 4, 'H', 2]

C
###Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face|Malgorzata Wierzbowska,Adam Dominiak###
(144709, 144709)
 Graphene halfly doped with H or F possesses local magnetization at theundoped C sites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4, 'H', 1],[63.0, 4, 'H', 2]

C
###Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face|Malgorzata Wierzbowska,Adam Dominiak###
(144769, 144769)
Deposition of doped graphene on the C-face 4H-SiC(0001) with two buffer layerssubstantially varies the electronic and thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 4, 'H', 3],[3.0, 4, 'H', 0]

MgZnO/ZnO
###Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures|Margarita Tsaousidou###
(145003, 145008)
Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[244.0, 200, 'mV', 5]

S
###Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures|Margarita Tsaousidou###
(145048, 145048)
 We present numerical simulations of the acoustic-phonon-limited mobility,muac, and phonon-drag thermopower, Sg<missing VAR>, in two-dimensional electrongases confined in MgZnO/ZnO heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 200, 'mV', 4]

MgZnO/ZnO
###Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures|Margarita Tsaousidou###
(145067, 145072)
 We present numerical simulations of the acoustic-phonon-limited mobility,muac, and phonon-drag thermopower, Sg<missing VAR>, in two-dimensional electrongases confined in MgZnO/ZnO heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[180.0, 200, 'mV', 4]

K
###Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures|Margarita Tsaousidou###
(145114, 145114)
 The calculations are based on theBoltzmann equation and are made for temperatures in the range 0.3-20 K andsheet densities 0.5-30times 1015 m<missing VAR>-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 200, 'mV', 3]

GaAs
###Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures|Margarita Tsaousidou###
(145200, 145201)
 We find that the magnitude of muac is dramatically decreasedin relation to GaAs based heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 200, 'mV', 1]

S
###Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures|Margarita Tsaousidou###
(145218, 145218)
 The phonon-drag thermopower,Sg<missing VAR>, which according to Herrings<missing VAR> expression is inversely proportional tomuac is severely increased exceeding 200 mV/K at T<missing VAR>5 K depending onsheet density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 200, 'mV', 0]

K
###Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures|Margarita Tsaousidou###
(145254, 145254)
 The phonon-drag thermopower,Sg<missing VAR>, which according to Herrings<missing VAR> expression is inversely proportional tomuac is severely increased exceeding 200 mV/K at T<missing VAR>5 K depending onsheet density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 200, 'mV', 0]

K
###Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures|Margarita Tsaousidou###
(145261, 145261)
 The phonon-drag thermopower,Sg<missing VAR>, which according to Herrings<missing VAR> expression is inversely proportional tomuac is severely increased exceeding 200 mV/K at T<missing VAR>5 K depending onsheet density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 200, 'mV', 0]

S
###Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures|Margarita Tsaousidou###
(145281, 145281)
 The giant values of Sg<missing VAR> lead to a strong improvement of thefigure of merit ZT at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 200, 'mV', 1]

MgZnO/ZnO
###Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures|Margarita Tsaousidou###
(145323, 145328)
 Our findings suggest that MgZnO/ZnOheterostructures can be candidates for good thermoelectric materials atcryogenic temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[71.0, 200, 'mV', 2]

MoS2
###MoS2 nanoribbons as promising thermoelectric materials|D. D. Fan,H. J. Liu,L. Cheng,P. H. Jiang,J. Shi,X. F. Tang###
(145363, 145365)
MoS2 nanoribbons as promising thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 4, 'leads', 4],[255.0, 5, ',', 4],[257.0, 6.0, 'As', 4]

MoS2
###MoS2 nanoribbons as promising thermoelectric materials|D. D. Fan,H. J. Liu,L. Cheng,P. H. Jiang,J. Shi,X. F. Tang###
(145386, 145388)
 The thermoelectric properties of MoS2 armchair nanoribbons with differentwidth are studied by using first-principles calculations and Boltzmanntransport theory, where the relaxation time is predicted from deformationpotential theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 4, 'leads', 3],[232.0, 5, ',', 3],[234.0, 6.0, 'As', 3]

N
###MoS2 nanoribbons as promising thermoelectric materials|D. D. Fan,H. J. Liu,L. Cheng,P. H. Jiang,J. Shi,X. F. Tang###
(145566, 145566)
 The smaller gap ofnanoribbon with width N  4 leads to a much larger electrical conductivity at300 K, which outweighs the relatively larger electronic thermal conductivitywhen compared with those of N  5, 6. As a results, the room temperature ZTvalues can be optimized to 2.7 (p<missing VAR>-type) and 2.0 (n<missing VAR>-type), which significantlyexceed the performance of most laboratory results reported in the literature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 4, 'leads', 0],[54.0, 5, ',', 0],[56.0, 6.0, 'As', 0]

K
###MoS2 nanoribbons as promising thermoelectric materials|D. D. Fan,H. J. Liu,L. Cheng,P. H. Jiang,J. Shi,X. F. Tang###
(145587, 145587)
 The smaller gap ofnanoribbon with width N  4 leads to a much larger electrical conductivity at300 K, which outweighs the relatively larger electronic thermal conductivitywhen compared with those of N  5, 6. As a results, the room temperature ZTvalues can be optimized to 2.7 (p<missing VAR>-type) and 2.0 (n<missing VAR>-type), which significantlyexceed the performance of most laboratory results reported in the literature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 4, 'leads', 0],[33.0, 5, ',', 0],[35.0, 6.0, 'As', 0]

N
###MoS2 nanoribbons as promising thermoelectric materials|D. D. Fan,H. J. Liu,L. Cheng,P. H. Jiang,J. Shi,X. F. Tang###
(145617, 145617)
 The smaller gap ofnanoribbon with width N  4 leads to a much larger electrical conductivity at300 K, which outweighs the relatively larger electronic thermal conductivitywhen compared with those of N  5, 6. As a results, the room temperature ZTvalues can be optimized to 2.7 (p<missing VAR>-type) and 2.0 (n<missing VAR>-type), which significantlyexceed the performance of most laboratory results reported in the literature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 4, 'leads', 0],[3.0, 5, ',', 0],[5.0, 6.0, 'As', 0]

B
###Nanomagnet coupled to quantum spin Hall edge: An adiabatic quantum motor|Liliana Arrachea,Felix von Oppen###
(145850, 145850)
 We point out that this devicerealizes an adiabatic quantum motor and discuss the efficiency of its operationbased on a scattering matrix approach akin to Landauer-Buttiker theory.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m|Lin Pan,Sunanda Mitra,Li-Dong Zhao,Yawei Shen,Yifeng Wang,Claudia Felser,David Berardan###
(146065, 146065)
The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 100, ',', 1],[55.0, 50, ',', 1],[76.0, 160, 'K', 2],[79.0, 400, 'K', 2],[292.0, 1.3, 'at', 4],[293.0, 889, 'K', 4]

SnSe2+m
###The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m|Lin Pan,Sunanda Mitra,Li-Dong Zhao,Yawei Shen,Yifeng Wang,Claudia Felser,David Berardan###
(146067, 146071)
The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[46.0, 100, ',', 1],[49.0, 50, ',', 1],[70.0, 160, 'K', 2],[73.0, 400, 'K', 2],[286.0, 1.3, 'at', 4],[287.0, 889, 'K', 4]

Ag
###The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m|Lin Pan,Sunanda Mitra,Li-Dong Zhao,Yawei Shen,Yifeng Wang,Claudia Felser,David Berardan###
(146099, 146099)
 We report on the successful synthesis and on the properties ofpolycrystalline AgPbmSnSe2+m (m<missing VAR>  ++++, 100, 50, 25) samples with a rock saltstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 100, ',', 0],[21.0, 50, ',', 0],[42.0, 160, 'K', 1],[45.0, 400, 'K', 1],[258.0, 1.3, 'at', 3],[259.0, 889, 'K', 3]

SnSe2+m
###The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m|Lin Pan,Sunanda Mitra,Li-Dong Zhao,Yawei Shen,Yifeng Wang,Claudia Felser,David Berardan###
(146101, 146105)
 We report on the successful synthesis and on the properties ofpolycrystalline AgPbmSnSe2+m (m<missing VAR>  ++++, 100, 50, 25) samples with a rock saltstructure.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[12.0, 100, ',', 0],[15.0, 50, ',', 0],[36.0, 160, 'K', 1],[39.0, 400, 'K', 1],[252.0, 1.3, 'at', 3],[253.0, 889, 'K', 3]

PbSe
###The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m|Lin Pan,Sunanda Mitra,Li-Dong Zhao,Yawei Shen,Yifeng Wang,Claudia Felser,David Berardan###
(146180, 146181)
 Between 160 K and 400 K, the dominant scattering process of thecarriers in this system changes from acoustic phonon scattering in PbSe toionized impurity scattering in AgPbmSnSe2+m, which synergistically optimizeselectrical and thermal transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 100, ',', 1],[60.0, 50, ',', 1],[39.0, 160, 'K', 0],[36.0, 400, 'K', 0],[176.0, 1.3, 'at', 2],[177.0, 889, 'K', 2]

Ag
###The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m|Lin Pan,Sunanda Mitra,Li-Dong Zhao,Yawei Shen,Yifeng Wang,Claudia Felser,David Berardan###
(146194, 146194)
 Between 160 K and 400 K, the dominant scattering process of thecarriers in this system changes from acoustic phonon scattering in PbSe toionized impurity scattering in AgPbmSnSe2+m, which synergistically optimizeselectrical and thermal transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 100, ',', 1],[74.0, 50, ',', 1],[53.0, 160, 'K', 0],[50.0, 400, 'K', 0],[163.0, 1.3, 'at', 2],[164.0, 889, 'K', 2]

SnSe2+m
###The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m|Lin Pan,Sunanda Mitra,Li-Dong Zhao,Yawei Shen,Yifeng Wang,Claudia Felser,David Berardan###
(146196, 146200)
 Between 160 K and 400 K, the dominant scattering process of thecarriers in this system changes from acoustic phonon scattering in PbSe toionized impurity scattering in AgPbmSnSe2+m, which synergistically optimizeselectrical and thermal transport properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[79.0, 100, ',', 1],[76.0, 50, ',', 1],[55.0, 160, 'K', 0],[52.0, 400, 'K', 0],[157.0, 1.3, 'at', 2],[158.0, 889, 'K', 2]

AgSnSe2
###The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m|Lin Pan,Sunanda Mitra,Li-Dong Zhao,Yawei Shen,Yifeng Wang,Claudia Felser,David Berardan###
(146234, 146237)
 Thanks to the faint amount ofAgSnSe2, the Seebeck coefficient is enhanced by boosting the scattering factor,the electric conductivity is improved by the increase of the concentration ofholes coupled to a limited degradation of their mobility, and the total thermalconductivity is reduced by suppressing bipolar thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 100, ',', 2],[114.0, 50, ',', 2],[93.0, 160, 'K', 1],[90.0, 400, 'K', 1],[120.0, 1.3, 'at', 1],[121.0, 889, 'K', 1]

Ag
###The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m|Lin Pan,Sunanda Mitra,Li-Dong Zhao,Yawei Shen,Yifeng Wang,Claudia Felser,David Berardan###
(146341, 146341)
 Therefore,ZT of AgPbmSnSe2+m (m<missing VAR>  50) reaches 1.3 at 889 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 100, ',', 3],[221.0, 50, ',', 3],[200.0, 160, 'K', 2],[197.0, 400, 'K', 2],[16.0, 1.3, 'at', 0],[17.0, 889, 'K', 0]

SnSe2+m
###The role of ionized impurity scattering on the thermoelectric performances of rock salt AgPbmSnSe2+m|Lin Pan,Sunanda Mitra,Li-Dong Zhao,Yawei Shen,Yifeng Wang,Claudia Felser,David Berardan###
(146343, 146347)
 Therefore,ZT of AgPbmSnSe2+m (m<missing VAR>  50) reaches 1.3 at 889 K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[226.0, 100, ',', 3],[223.0, 50, ',', 3],[202.0, 160, 'K', 2],[199.0, 400, 'K', 2],[10.0, 1.3, 'at', 0],[11.0, 889, 'K', 0]

Mg3Sb2
###Ab initio thermal conductivity of thermoelectric Mg$_3$Sb$_2$: evidence for dominant extrinsic effects|Maria Barbara Maccioni,Roberta Farris,Vincenzo Fiorentini###
(146422, 146425)
Ab initio thermal conductivity of thermoelectric Mg3Sb2 evidence for dominant extrinsic effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###Ab initio thermal conductivity of thermoelectric Mg$_3$Sb$_2$: evidence for dominant extrinsic effects|Maria Barbara Maccioni,Roberta Farris,Vincenzo Fiorentini###
(146457, 146460)
 The lattice thermal conductivity of the candidate thermoelectric materialMg3Sb2 is studied from first principles, with the inclusion ofanharmonic, isotope, and boundary scattering processes, and via an accuratesolution of the Boltzmann equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2Ti2O7
###High thermoelectric figure of merit and thermopower in layered perovskite oxides|Vincenzo Fiorentini,Roberta Farris,Edoardo Argiolas,Maria Barbara Maccioni###
(146751, 146756)
 We predict high thermoelectric efficiency in the layered perovskiteLa2Ti2O7, based on calculations (mostly ab-initio) of the electronicstructure, transport coefficients, and thermal conductivity in a widetemperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2.5, 'at', 1],[99.0, 1200, 'K', 1],[163.0, 1, 'mV', 2],[207.0, 1, 'W', 3]

V/K
###High thermoelectric figure of merit and thermopower in layered perovskite oxides|Vincenzo Fiorentini,Roberta Farris,Edoardo Argiolas,Maria Barbara Maccioni###
(146901, 146903)
 The Seebeck thermopower coefficient is between 200and 300 muV/K at optimal doping, but can reach nearly 1 mV/K at low doping.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[47.0, 2.5, 'at', 1],[46.0, 1200, 'K', 1],[16.0, 1, 'mV', 0],[60.0, 1, 'W', 1]

K
###High thermoelectric figure of merit and thermopower in layered perovskite oxides|Vincenzo Fiorentini,Roberta Farris,Edoardo Argiolas,Maria Barbara Maccioni###
(146921, 146921)
 The Seebeck thermopower coefficient is between 200and 300 muV/K at optimal doping, but can reach nearly 1 mV/K at low doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 2.5, 'at', 1],[66.0, 1200, 'K', 1],[2.0, 1, 'mV', 0],[42.0, 1, 'W', 1]

K
###High thermoelectric figure of merit and thermopower in layered perovskite oxides|Vincenzo Fiorentini,Roberta Farris,Edoardo Argiolas,Maria Barbara Maccioni###
(146966, 146966)
Much of the potential of this material is due to its lattice thermalconductivity of order 1 W/(K m); using a model based on ab initio anharmoniccalculations, we interpret this low value as due to effective phononconfinement within the layered-structure blocks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 2.5, 'at', 2],[111.0, 1200, 'K', 2],[47.0, 1, 'mV', 1],[3.0, 1, 'W', 0]

Pb1-x
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147048, 147051)
Graphene-like conjugated pi-bond system in Pb1-xSnxSe.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[55.0, 6, 'pz', 1],[270.0, 6, 'pz', 3]

Se
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147053, 147053)
Graphene-like conjugated pi-bond system in Pb1-xSnxSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 6, 'pz', 1],[268.0, 6, 'pz', 3]

Pb1-x
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147127, 147130)
 Following the identification of the pi bond in graphene, in this work, a pibond constructed through side-to-side overlap of half-filled 6pz orbitals wasobserved in a non-carbon crystal of Pb1-xSnxSe (x<missing VAR>0.34) (PSS), a prototypetopological crystalline insulator (T<missing VAR>CI) and thermoelectric material with a highfigure-of-merit (ZT).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[21.0, 6, 'pz', 0],[191.0, 6, 'pz', 2]

Se
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147132, 147132)
 Following the identification of the pi bond in graphene, in this work, a pibond constructed through side-to-side overlap of half-filled 6pz orbitals wasobserved in a non-carbon crystal of Pb1-xSnxSe (x<missing VAR>0.34) (PSS), a prototypetopological crystalline insulator (T<missing VAR>CI) and thermoelectric material with a highfigure-of-merit (ZT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 6, 'pz', 0],[189.0, 6, 'pz', 2]

(PSS)
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147139, 147143)
 Following the identification of the pi bond in graphene, in this work, a pibond constructed through side-to-side overlap of half-filled 6pz orbitals wasobserved in a non-carbon crystal of Pb1-xSnxSe (x<missing VAR>0.34) (PSS), a prototypetopological crystalline insulator (T<missing VAR>CI) and thermoelectric material with a highfigure-of-merit (ZT).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 6, 'pz', 0],[178.0, 6, 'pz', 2]

I
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147160, 147160)
 Following the identification of the pi bond in graphene, in this work, a pibond constructed through side-to-side overlap of half-filled 6pz orbitals wasobserved in a non-carbon crystal of Pb1-xSnxSe (x<missing VAR>0.34) (PSS), a prototypetopological crystalline insulator (T<missing VAR>CI) and thermoelectric material with a highfigure-of-merit (ZT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 6, 'pz', 0],[161.0, 6, 'pz', 2]

PSS
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147188, 147190)
 PSS compounds with a rock-salt type cubic crystalstructure was found to consist of sigma bond connected covalent chains ofPb(Sn)-Se with an additional pi bond that is shared as a conjugated systemamong the four nearest neighbor Pb pairs in square symmetry within all (001)monoatomic layers per cubic unit cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 6, 'pz', 1],[131.0, 6, 'pz', 1]

Pb(Sn)
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147234, 147237)
 PSS compounds with a rock-salt type cubic crystalstructure was found to consist of sigma bond connected covalent chains ofPb(Sn)-Se with an additional pi bond that is shared as a conjugated systemamong the four nearest neighbor Pb pairs in square symmetry within all (001)monoatomic layers per cubic unit cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 6, 'pz', 1],[84.0, 6, 'pz', 1]

Se
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147239, 147239)
 PSS compounds with a rock-salt type cubic crystalstructure was found to consist of sigma bond connected covalent chains ofPb(Sn)-Se with an additional pi bond that is shared as a conjugated systemamong the four nearest neighbor Pb pairs in square symmetry within all (001)monoatomic layers per cubic unit cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 6, 'pz', 1],[82.0, 6, 'pz', 1]

Pb
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147276, 147276)
 PSS compounds with a rock-salt type cubic crystalstructure was found to consist of sigma bond connected covalent chains ofPb(Sn)-Se with an additional pi bond that is shared as a conjugated systemamong the four nearest neighbor Pb pairs in square symmetry within all (001)monoatomic layers per cubic unit cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 6, 'pz', 1],[45.0, 6, 'pz', 1]

Pb
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147328, 147328)
 The pi bond formed with half-filled 6pzorbitals between Pb atoms is consistent with the calculated results fromquantum chemistry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 6, 'pz', 2],[7.0, 6, 'pz', 0]

S
###Graphene-like conjugated pi-bond system in Pb1-xSnxSe|G. J. Shu,S. C. Liou,S. Karna,R. Sankar,M. Hayashi,M. -W. Chu,F. C. Chou###
(147385, 147385)
 The presence of pi bonds was identified and verified withelectron energy-loss spectroscopy (EELS) through plasmonic excitations andelectron density (ED) mapping via an inverse Fourier transform of X<missing VAR>-raydiffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 6, 'pz', 3],[64.0, 6, 'pz', 1]

BN
###Thermoelectric Transport in Graphene/$h$-BN/Graphene Heterostructures: A Computational Study|Ransell D'Souza,Sugata Mukherjee###
(147446, 147447)
Thermoelectric Transport in Graphene/h<missing VAR>-BN/Graphene Heterostructures A Computational Study.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(BN)
###Thermoelectric Transport in Graphene/$h$-BN/Graphene Heterostructures: A Computational Study|Ransell D'Souza,Sugata Mukherjee###
(147499, 147502)
 We present first principles study of thermoelectric transport properties ofsandwiched heterostructure of Graphene (G)/hexagonal Boron Nitride (BN)/G<missing VAR>,based on Boltzmann transport theory for band electrons using the bandstructurecalculated from the Density Functional Theory (DFT) based plane-wave method.
Featurization successful!
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Thermoelectric Transport in Graphene/$h$-BN/Graphene Heterostructures: A Computational Study|Ransell D'Souza,Sugata Mukherjee###
(147578, 147579)
Calculations were carried out for three, four and five BN layers sandwichedbetween Graphene layers with three different arrangements to obtain the Seebeckcoefficient and Power factor in T<missing VAR>sim 25-400K range.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Thermoelectric Transport in Graphene/$h$-BN/Graphene Heterostructures: A Computational Study|Ransell D'Souza,Sugata Mukherjee###
(147625, 147625)
Calculations were carried out for three, four and five BN layers sandwichedbetween Graphene layers with three different arrangements to obtain the Seebeckcoefficient and Power factor in T<missing VAR>sim 25-400K range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(K)
###Thermoelectric Transport in Graphene/$h$-BN/Graphene Heterostructures: A Computational Study|Ransell D'Souza,Sugata Mukherjee###
(147668, 147670)
 Moreover, usingMolecular Dynamics (MD) simulations with very large simulation cell we obtainedthe thermal conductance (K) of these heterostructures and obtained finallythe Figure-of-Merit (ZT).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Earth-abundant and Non-toxic SiX (X=S, Se) Monolayers as Highly Efficient Thermoelectric Materials|Ji-Hui Yang,Qinghong Yuan,Huixiong Deng,Su-Huai Wei,Boris I. Yakobson###
(147739, 147739)
Earth-abundant and Non-toxic SiX<missing VAR> (X<missing VAR>S, Se) Monolayers as Highly Efficient Thermoelectric Materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 1, 'or', 4],[279.0, 2, 'over', 4]

S
###Earth-abundant and Non-toxic SiX (X=S, Se) Monolayers as Highly Efficient Thermoelectric Materials|Ji-Hui Yang,Qinghong Yuan,Huixiong Deng,Su-Huai Wei,Boris I. Yakobson###
(147744, 147744)
Earth-abundant and Non-toxic SiX<missing VAR> (X<missing VAR>S, Se) Monolayers as Highly Efficient Thermoelectric Materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 1, 'or', 4],[274.0, 2, 'over', 4]

Se
###Earth-abundant and Non-toxic SiX (X=S, Se) Monolayers as Highly Efficient Thermoelectric Materials|Ji-Hui Yang,Qinghong Yuan,Huixiong Deng,Su-Huai Wei,Boris I. Yakobson###
(147747, 147747)
Earth-abundant and Non-toxic SiX<missing VAR> (X<missing VAR>S, Se) Monolayers as Highly Efficient Thermoelectric Materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 1, 'or', 4],[271.0, 2, 'over', 4]

SiS
###Earth-abundant and Non-toxic SiX (X=S, Se) Monolayers as Highly Efficient Thermoelectric Materials|Ji-Hui Yang,Qinghong Yuan,Huixiong Deng,Su-Huai Wei,Boris I. Yakobson###
(147853, 147854)
 Here we demonstrate that, SiS and SiSe monolayers made fromnon-toxic and earth-abundant elements intrinsically have low thermalconductivities arising from their low-frequency optical phonon branches withlarge overlaps with acoustic phonon modes, which is similar to thestate-of-the-art experimentally demonstrated material SnSe with a layeredstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 1, 'or', 1],[164.0, 2, 'over', 1]

SiSe
###Earth-abundant and Non-toxic SiX (X=S, Se) Monolayers as Highly Efficient Thermoelectric Materials|Ji-Hui Yang,Qinghong Yuan,Huixiong Deng,Su-Huai Wei,Boris I. Yakobson###
(147858, 147859)
 Here we demonstrate that, SiS and SiSe monolayers made fromnon-toxic and earth-abundant elements intrinsically have low thermalconductivities arising from their low-frequency optical phonon branches withlarge overlaps with acoustic phonon modes, which is similar to thestate-of-the-art experimentally demonstrated material SnSe with a layeredstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1, 'or', 1],[159.0, 2, 'over', 1]

SnSe
###Earth-abundant and Non-toxic SiX (X=S, Se) Monolayers as Highly Efficient Thermoelectric Materials|Ji-Hui Yang,Qinghong Yuan,Huixiong Deng,Su-Huai Wei,Boris I. Yakobson###
(147948, 147949)
 Here we demonstrate that, SiS and SiSe monolayers made fromnon-toxic and earth-abundant elements intrinsically have low thermalconductivities arising from their low-frequency optical phonon branches withlarge overlaps with acoustic phonon modes, which is similar to thestate-of-the-art experimentally demonstrated material SnSe with a layeredstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1, 'or', 1],[69.0, 2, 'over', 1]

TiNiSn
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148111, 148113)
Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 0.05, 'the', 7],[364.0, 61, '%', 8]

MnNiSb
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148119, 148121)
Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 0.05, 'the', 7],[356.0, 61, '%', 8]

TiNiSn
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148149, 148151)
 The thermoelectric properties of n<missing VAR> type semiconductor, TiNiSn is optimized bypartial substitution with metallic, MnNiSb in the half Heusler structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 0.05, 'the', 6],[326.0, 61, '%', 7]

MnNiSb
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148169, 148171)
 The thermoelectric properties of n<missing VAR> type semiconductor, TiNiSn is optimized bypartial substitution with metallic, MnNiSb in the half Heusler structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 0.05, 'the', 6],[306.0, 61, '%', 7]

Ti1-x
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148216, 148219)
 The Ti1-xMnxNiSn1-xSbx alloys were prepared by arc-melting and wereannealed at temperatures obtained from differential thermal analysis anddifferential scanning calorimetry results.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[208.0, 0.05, 'the', 4],[258.0, 61, '%', 5]

NiSn1-x
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148221, 148225)
 The Ti1-xMnxNiSn1-xSbx alloys were prepared by arc-melting and wereannealed at temperatures obtained from differential thermal analysis anddifferential scanning calorimetry results.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[202.0, 0.05, 'the', 4],[252.0, 61, '%', 5]

TiNiSn
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148329, 148331)
 After annealing the majority phase wasTiNiSn with some Ni rich sites and the minority phases was majorly Ti6Sn5, Sn,and MnSn2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 0.05, 'the', 2],[146.0, 61, '%', 3]

Ni
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148337, 148337)
 After annealing the majority phase wasTiNiSn with some Ni rich sites and the minority phases was majorly Ti6Sn5, Sn,and MnSn2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.05, 'the', 2],[140.0, 61, '%', 3]

Ti6Sn5
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148355, 148358)
 After annealing the majority phase wasTiNiSn with some Ni rich sites and the minority phases was majorly Ti6Sn5, Sn,and MnSn2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.45454545454545453,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 0.05, 'the', 2],[119.0, 61, '%', 3]

Sn
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148361, 148361)
 After annealing the majority phase wasTiNiSn with some Ni rich sites and the minority phases was majorly Ti6Sn5, Sn,and MnSn2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0.05, 'the', 2],[116.0, 61, '%', 3]

MnSn2
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148367, 148369)
 After annealing the majority phase wasTiNiSn with some Ni rich sites and the minority phases was majorly Ti6Sn5, Sn,and MnSn2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.05, 'the', 2],[108.0, 61, '%', 3]

Ni
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148372, 148372)
 Ni rich sites were caused by Frenkel defects, this led to ametal-like behavior of the semiconducting specimens at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0.05, 'the', 1],[105.0, 61, '%', 2]

TiNiSn
###Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure|T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser###
(148497, 148499)
 The figure of merit for x<missing VAR>0.05 was increased by 61%(ZT0.45) in comparison to the pure TiNiSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.05, 'the', 1],[20.0, 61, '%', 0]

At
###Enhanced thermoelectricity at the ultra-thin film limit|Thao T. T. Nguyen,Linh T. Dang,Giang H. Bach,Tung H. Dang,Kien T. Nguyen,Hong T. Pham,Thuat T. Nguyen,Tuyen V. Nguyen,Toan T. Nguyen,Hung Q. Nguyen###
(148527, 148527)
 At the ultra-thin film limit, quantum confinement strongly improvesthermoelectric figure of merit in materials such as Sb2Te3 andBi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 100, 'nm', 3],[214.0, 50, 'nm', 4],[250.0, 1, 'mV', 5],[265.0, 2, ',', 5]

Sb2Te3
###Enhanced thermoelectricity at the ultra-thin film limit|Thao T. T. Nguyen,Linh T. Dang,Giang H. Bach,Tung H. Dang,Kien T. Nguyen,Hong T. Pham,Thuat T. Nguyen,Tuyen V. Nguyen,Toan T. Nguyen,Hung Q. Nguyen###
(148565, 148568)
 At the ultra-thin film limit, quantum confinement strongly improvesthermoelectric figure of merit in materials such as Sb2Te3 andBi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 100, 'nm', 3],[173.0, 50, 'nm', 4],[209.0, 1, 'mV', 5],[224.0, 2, ',', 5]

Bi2Te3
###Enhanced thermoelectricity at the ultra-thin film limit|Thao T. T. Nguyen,Linh T. Dang,Giang H. Bach,Tung H. Dang,Kien T. Nguyen,Hong T. Pham,Thuat T. Nguyen,Tuyen V. Nguyen,Toan T. Nguyen,Hung Q. Nguyen###
(148573, 148576)
 At the ultra-thin film limit, quantum confinement strongly improvesthermoelectric figure of merit in materials such as Sb2Te3 andBi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 100, 'nm', 3],[165.0, 50, 'nm', 4],[201.0, 1, 'mV', 5],[216.0, 2, ',', 5]

Sb2Te3
###Enhanced thermoelectricity at the ultra-thin film limit|Thao T. T. Nguyen,Linh T. Dang,Giang H. Bach,Tung H. Dang,Kien T. Nguyen,Hong T. Pham,Thuat T. Nguyen,Tuyen V. Nguyen,Toan T. Nguyen,Hung Q. Nguyen###
(148644, 148647)
 We report a two foldincrease in the Seebeck coefficient for both p<missing VAR>-type Sb2Te3 and n<missing VAR>-typeBi2Te3 using thermal co-evaporation, an affordable approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 100, 'nm', 1],[94.0, 50, 'nm', 2],[130.0, 1, 'mV', 3],[145.0, 2, ',', 3]

Bi2Te3
###Enhanced thermoelectricity at the ultra-thin film limit|Thao T. T. Nguyen,Linh T. Dang,Giang H. Bach,Tung H. Dang,Kien T. Nguyen,Hong T. Pham,Thuat T. Nguyen,Tuyen V. Nguyen,Toan T. Nguyen,Hung Q. Nguyen###
(148656, 148659)
 We report a two foldincrease in the Seebeck coefficient for both p<missing VAR>-type Sb2Te3 and n<missing VAR>-typeBi2Te3 using thermal co-evaporation, an affordable approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 100, 'nm', 1],[82.0, 50, 'nm', 2],[118.0, 1, 'mV', 3],[133.0, 2, ',', 3]

At
###Enhanced thermoelectricity at the ultra-thin film limit|Thao T. T. Nguyen,Linh T. Dang,Giang H. Bach,Tung H. Dang,Kien T. Nguyen,Hong T. Pham,Thuat T. Nguyen,Tuyen V. Nguyen,Toan T. Nguyen,Hung Q. Nguyen###
(148677, 148677)
 At the thickfilm limit greater than 100 nm, their Seebeck coefficients are around 100 muV/K, similar to results obtained in other work.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 100, 'nm', 0],[64.0, 50, 'nm', 1],[100.0, 1, 'mV', 2],[115.0, 2, ',', 2]

V/K
###Enhanced thermoelectricity at the ultra-thin film limit|Thao T. T. Nguyen,Linh T. Dang,Giang H. Bach,Tung H. Dang,Kien T. Nguyen,Hong T. Pham,Thuat T. Nguyen,Tuyen V. Nguyen,Toan T. Nguyen,Hung Q. Nguyen###
(148709, 148711)
 At the thickfilm limit greater than 100 nm, their Seebeck coefficients are around 100 muV/K, similar to results obtained in other work.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[18.0, 100, 'nm', 0],[30.0, 50, 'nm', 1],[66.0, 1, 'mV', 2],[81.0, 2, ',', 2]

V/K
###Enhanced thermoelectricity at the ultra-thin film limit|Thao T. T. Nguyen,Linh T. Dang,Giang H. Bach,Tung H. Dang,Kien T. Nguyen,Hong T. Pham,Thuat T. Nguyen,Tuyen V. Nguyen,Toan T. Nguyen,Hung Q. Nguyen###
(148760, 148762)
 When the films are thinnerthan 50 nm, the Seebeck coefficient increases to about 500 mu V/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[69.0, 100, 'nm', 1],[19.0, 50, 'nm', 0],[15.0, 1, 'mV', 1],[30.0, 2, ',', 1]

K
###Enhanced thermoelectricity at the ultra-thin film limit|Thao T. T. Nguyen,Linh T. Dang,Giang H. Bach,Tung H. Dang,Kien T. Nguyen,Hong T. Pham,Thuat T. Nguyen,Tuyen V. Nguyen,Toan T. Nguyen,Hung Q. Nguyen###
(148779, 148779)
 With atotal Seebeck coefficient sim 1 mV/K and an estimate ZT sim 2, this pairof materials is the first step to a practical micro-cooler at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 100, 'nm', 2],[38.0, 50, 'nm', 1],[2.0, 1, 'mV', 0],[13.0, 2, ',', 0]

PtCoO2
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(148861, 148864)
Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO2 and PdCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, -107, ',', 3],[199.0, -5, ',', 3],[210.0, -303, ',', 3],[221.0, 5, ',', 3],[350.0, 600, ',', 5]

PdCoO2
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(148868, 148871)
Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO2 and PdCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, -107, ',', 3],[192.0, -5, ',', 3],[203.0, -303, ',', 3],[214.0, 5, ',', 3],[343.0, 600, ',', 5]

PtCoO2
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(148933, 148936)
 By a combination of first-principles calculations and semi-classicalBoltzmann transport theory, we investigate the effect of epitaxial strain onthe electronic structure and transport properties of PtCoO2 and PdCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, -107, ',', 2],[127.0, -5, ',', 2],[138.0, -303, ',', 2],[149.0, 5, ',', 2],[278.0, 600, ',', 4]

PdCoO2
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(148940, 148943)
 By a combination of first-principles calculations and semi-classicalBoltzmann transport theory, we investigate the effect of epitaxial strain onthe electronic structure and transport properties of PtCoO2 and PdCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, -107, ',', 2],[120.0, -5, ',', 2],[131.0, -303, ',', 2],[142.0, 5, ',', 2],[271.0, 600, ',', 4]

In
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(148947, 148947)
In contrast to the rather uniform elastic response of both systems, we predictfor PtCoO2 a high sensitivity of the out-of-plane transport properties tostrain, which is not present in PdCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, -107, ',', 1],[116.0, -5, ',', 1],[127.0, -303, ',', 1],[138.0, 5, ',', 1],[267.0, 600, ',', 3]

PtCoO2
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(148977, 148980)
In contrast to the rather uniform elastic response of both systems, we predictfor PtCoO2 a high sensitivity of the out-of-plane transport properties tostrain, which is not present in PdCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, -107, ',', 1],[83.0, -5, ',', 1],[94.0, -303, ',', 1],[105.0, 5, ',', 1],[234.0, 600, ',', 3]

PdCoO2
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(149018, 149021)
In contrast to the rather uniform elastic response of both systems, we predictfor PtCoO2 a high sensitivity of the out-of-plane transport properties tostrain, which is not present in PdCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, -107, ',', 1],[42.0, -5, ',', 1],[53.0, -303, ',', 1],[64.0, 5, ',', 1],[193.0, 600, ',', 3]

At
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(149024, 149024)
 At ambient temperature, we identifya considerable absolute change in the thermopower from -107,muV/K at-5,% compressive strain to -303,muV/K at +5,% tensile strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, -107, ',', 0],[39.0, -5, ',', 0],[50.0, -303, ',', 0],[61.0, 5, ',', 0],[190.0, 600, ',', 2]

V/K
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(149056, 149058)
 At ambient temperature, we identifya considerable absolute change in the thermopower from -107,muV/K at-5,% compressive strain to -303,muV/K at +5,% tensile strain.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[4.0, -107, ',', 0],[5.0, -5, ',', 0],[16.0, -303, ',', 0],[27.0, 5, ',', 0],[156.0, 600, ',', 2]

V/K
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(149078, 149080)
 At ambient temperature, we identifya considerable absolute change in the thermopower from -107,muV/K at-5,% compressive strain to -303,muV/K at +5,% tensile strain.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[26.0, -107, ',', 0],[15.0, -5, ',', 0],[4.0, -303, ',', 0],[5.0, 5, ',', 0],[134.0, 600, ',', 2]

K
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(149216, 149216)
 Combining our transport results with available experimental data onelectrical and lattice thermal conductivity we predict a thermoelectric figureof merit of up to ZT,,0.25 at T<missing VAR>,,600,K for strainedPtCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, -107, ',', 2],[153.0, -5, ',', 2],[142.0, -303, ',', 2],[131.0, 5, ',', 2],[2.0, 600, ',', 0]

PtCoO2
###Impact of strain-induced electronic topological transition on the thermoelectric properties of PtCoO$_2$ and PdCoO$_2$|Markus Ernst Gruner,Ulrich Eckern,Rossitza Pentcheva###
(149223, 149226)
 Combining our transport results with available experimental data onelectrical and lattice thermal conductivity we predict a thermoelectric figureof merit of up to ZT,,0.25 at T<missing VAR>,,600,K for strainedPtCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, -107, ',', 2],[160.0, -5, ',', 2],[149.0, -303, ',', 2],[138.0, 5, ',', 2],[9.0, 600, ',', 0]

PbSe
###Strong interlayer coupling in two-dimensional PbSe with high thermoelectric performance|Z. P. Yin,C. Y. Sheng,R. Hu,S. H. Han,D. D. Fan,G. H. Cao,H. J. Liu###
(149249, 149250)
Strong interlayer coupling in two-dimensional PbSe with high thermoelectric performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 2.5, 'can', 4],[217.0, 900, 'K', 4]

IV
###Strong interlayer coupling in two-dimensional PbSe with high thermoelectric performance|Z. P. Yin,C. Y. Sheng,R. Hu,S. H. Han,D. D. Fan,G. H. Cao,H. J. Liu###
(149300, 149301)
 It was generally assumed that weak van der Waals interactions exist betweenneighboring layers in the two-dimensional group-IV chalcogenides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 2.5, 'can', 3],[166.0, 900, 'K', 3]

PbSe
###Strong interlayer coupling in two-dimensional PbSe with high thermoelectric performance|Z. P. Yin,C. Y. Sheng,R. Hu,S. H. Han,D. D. Fan,G. H. Cao,H. J. Liu###
(149308, 149309)
 Using PbSe asa prototypal example, however, we find additional strong coupling between thePb-Pb layers, as evidenced by detailed analysis of the differential chargedensity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2.5, 'can', 2],[158.0, 900, 'K', 2]

Pb
###Strong interlayer coupling in two-dimensional PbSe with high thermoelectric performance|Z. P. Yin,C. Y. Sheng,R. Hu,S. H. Han,D. D. Fan,G. H. Cao,H. J. Liu###
(149339, 149339)
 Using PbSe asa prototypal example, however, we find additional strong coupling between thePb-Pb layers, as evidenced by detailed analysis of the differential chargedensity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2.5, 'can', 2],[128.0, 900, 'K', 2]

Pb
###Strong interlayer coupling in two-dimensional PbSe with high thermoelectric performance|Z. P. Yin,C. Y. Sheng,R. Hu,S. H. Han,D. D. Fan,G. H. Cao,H. J. Liu###
(149341, 149341)
 Using PbSe asa prototypal example, however, we find additional strong coupling between thePb-Pb layers, as evidenced by detailed analysis of the differential chargedensity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2.5, 'can', 2],[126.0, 900, 'K', 2]

PbSe
###Strong interlayer coupling in two-dimensional PbSe with high thermoelectric performance|Z. P. Yin,C. Y. Sheng,R. Hu,S. H. Han,D. D. Fan,G. H. Cao,H. J. Liu###
(149438, 149439)
 The coupling resembles covalent-like bond and exhibits strongharmonicity around the equilibrium distance, which can be fine tuned toobviously reduce the phonon thermal conductivity but slightly change theelectronic transport of PbSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2.5, 'can', 1],[28.0, 900, 'K', 1]

As
###Strong interlayer coupling in two-dimensional PbSe with high thermoelectric performance|Z. P. Yin,C. Y. Sheng,R. Hu,S. H. Han,D. D. Fan,G. H. Cao,H. J. Liu###
(149442, 149442)
 As a consequence, a maximum ZT value of 2.5 canbe realized at 900 K for the p<missing VAR>-type system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2.5, 'can', 0],[25.0, 900, 'K', 0]

CuCu2O
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149557, 149560)
Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell CuCu2O Nanocomposites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, -1, ',', 3],[181.0, 0.16, 'at', 3],[182.0, 320, 'K', 3]

In
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149601, 149601)
 In this direction, this isthe first report on TE properties of low-cost, nontoxic, and abundantcore-shell CuCu2O nanocomposites (NCs) synthesized using a facile and cheapsolution-phase method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, -1, ',', 1],[140.0, 0.16, 'at', 1],[141.0, 320, 'K', 1]

CuCu2O
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149645, 149648)
 In this direction, this isthe first report on TE properties of low-cost, nontoxic, and abundantcore-shell CuCu2O nanocomposites (NCs) synthesized using a facile and cheapsolution-phase method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, -1, ',', 1],[93.0, 0.16, 'at', 1],[94.0, 320, 'K', 1]

(NCs)
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149652, 149655)
 In this direction, this isthe first report on TE properties of low-cost, nontoxic, and abundantcore-shell CuCu2O nanocomposites (NCs) synthesized using a facile and cheapsolution-phase method.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, -1, ',', 1],[86.0, 0.16, 'at', 1],[87.0, 320, 'K', 1]

VK
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149712, 149713)
 They show ultralow thermal conductivity of nearly 10-3of copper bulk value, large thermopower 0.373 m<missing VAR>VK-1, and consequently, a TEfigure of merit (ZT) of 0.16 at 320 K which is larger than those of many of thepotential TE materials such as PbTe, SnSe and SiGe, showing its potential forTE applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, -1, ',', 0],[28.0, 0.16, 'at', 0],[29.0, 320, 'K', 0]

PbTe
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149774, 149775)
 They show ultralow thermal conductivity of nearly 10-3of copper bulk value, large thermopower 0.373 m<missing VAR>VK-1, and consequently, a TEfigure of merit (ZT) of 0.16 at 320 K which is larger than those of many of thepotential TE materials such as PbTe, SnSe and SiGe, showing its potential forTE applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, -1, ',', 0],[33.0, 0.16, 'at', 0],[32.0, 320, 'K', 0]

SnSe
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149778, 149779)
 They show ultralow thermal conductivity of nearly 10-3of copper bulk value, large thermopower 0.373 m<missing VAR>VK-1, and consequently, a TEfigure of merit (ZT) of 0.16 at 320 K which is larger than those of many of thepotential TE materials such as PbTe, SnSe and SiGe, showing its potential forTE applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, -1, ',', 0],[37.0, 0.16, 'at', 0],[36.0, 320, 'K', 0]

SiGe
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149783, 149784)
 They show ultralow thermal conductivity of nearly 10-3of copper bulk value, large thermopower 0.373 m<missing VAR>VK-1, and consequently, a TEfigure of merit (ZT) of 0.16 at 320 K which is larger than those of many of thepotential TE materials such as PbTe, SnSe and SiGe, showing its potential forTE applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, -1, ',', 0],[42.0, 0.16, 'at', 0],[41.0, 320, 'K', 0]

Cu2O
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149835, 149837)
 The ultralow thermal conductivity is mainly attributed to themultiscale phonon scattering from intrinsic defects in Cu2O, grain boundaries(G<missing VAR>Bs), lattice-mismatched interface as well as dissimilar vibrationalproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, -1, ',', 1],[94.0, 0.16, 'at', 1],[93.0, 320, 'K', 1]

S
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149901, 149901)
 The large thermopower is associated with sharp modulation incarrier density of states (D<missing VAR>OS) due to charge transfer between Cu and Cu2Onanoparticles (NPs), and carrier energy filtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, -1, ',', 2],[160.0, 0.16, 'at', 2],[159.0, 320, 'K', 2]

Cu
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149914, 149914)
 The large thermopower is associated with sharp modulation incarrier density of states (D<missing VAR>OS) due to charge transfer between Cu and Cu2Onanoparticles (NPs), and carrier energy filtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, -1, ',', 2],[173.0, 0.16, 'at', 2],[172.0, 320, 'K', 2]

Cu2O
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149918, 149920)
 The large thermopower is associated with sharp modulation incarrier density of states (D<missing VAR>OS) due to charge transfer between Cu and Cu2Onanoparticles (NPs), and carrier energy filtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, -1, ',', 2],[177.0, 0.16, 'at', 2],[176.0, 320, 'K', 2]

N
###Ultralow Thermal Conductivity and Large Figure of Merit in Low-Cost and Nontoxic Core-Shell Cu@Cu2O Nanocomposites|Vikash Sharma,Gunadhor Singh Okram,Divya Verma,Niranjan Prasad Lalla,Yung-Kang Kuo###
(149926, 149926)
 The large thermopower is associated with sharp modulation incarrier density of states (D<missing VAR>OS) due to charge transfer between Cu and Cu2Onanoparticles (NPs), and carrier energy filtering.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, -1, ',', 2],[185.0, 0.16, 'at', 2],[184.0, 320, 'K', 2]

SWCN
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150010, 150013)
 We have theoretically investigated thermoelectric (TE) effects of narrow-gapsingle-walled carbon nanotubes (SWCNTs) with randomly substituted nitrogen (N)impurities, i.e.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 20, ',', 1],[51.0, 0.497, 'eV', 1],[239.0, 300, 'K', 5],[317.0, 20, ',', 6],[342.0, 300, 'K', 6]

(N)
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150025, 150027)
 We have theoretically investigated thermoelectric (TE) effects of narrow-gapsingle-walled carbon nanotubes (SWCNTs) with randomly substituted nitrogen (N)impurities, i.e.
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 20, ',', 1],[37.0, 0.497, 'eV', 1],[225.0, 300, 'K', 5],[303.0, 20, ',', 6],[328.0, 300, 'K', 6]

N
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150039, 150039)
, N-substituted (20,0) SWCNTs with a band gap of 0.497 eV.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 20, ',', 0],[25.0, 0.497, 'eV', 0],[213.0, 300, 'K', 4],[291.0, 20, ',', 5],[316.0, 300, 'K', 5]

SWCN
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150049, 150052)
, N-substituted (20,0) SWCNTs with a band gap of 0.497 eV.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 20, ',', 0],[12.0, 0.497, 'eV', 0],[200.0, 300, 'K', 4],[278.0, 20, ',', 5],[303.0, 300, 'K', 5]

In
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150127, 150127)
In this study, the N-impurity bands are treated with both conduction andvalence bands taken into account self-consistently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 20, ',', 2],[63.0, 0.497, 'eV', 2],[125.0, 300, 'K', 2],[203.0, 20, ',', 3],[228.0, 300, 'K', 3]

N
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150136, 150136)
In this study, the N-impurity bands are treated with both conduction andvalence bands taken into account self-consistently.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 20, ',', 2],[72.0, 0.497, 'eV', 2],[116.0, 300, 'K', 2],[194.0, 20, ',', 3],[219.0, 300, 'K', 3]

N
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150178, 150178)
 We found the optimal Nconcentration per unit cell, c<missing VAR>rm opt, which gives the maximum powerfactor (PF) for various temperatures, e.g.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 20, ',', 3],[114.0, 0.497, 'eV', 3],[74.0, 300, 'K', 1],[152.0, 20, ',', 2],[177.0, 300, 'K', 2]

(PF)
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150209, 150212)
 We found the optimal Nconcentration per unit cell, c<missing VAR>rm opt, which gives the maximum powerfactor (PF) for various temperatures, e.g.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 20, ',', 3],[145.0, 0.497, 'eV', 3],[40.0, 300, 'K', 1],[118.0, 20, ',', 2],[143.0, 300, 'K', 2]

PF0.30
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150227, 150229)
, PF0.30rmW/K2m<missing VAR> withc<missing VAR>rm opt3.1times 10-5 at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.23076923076923075,0,0,0,0,0,0.7692307692307692,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 20, ',', 4],[163.0, 0.497, 'eV', 4],[23.0, 300, 'K', 0],[101.0, 20, ',', 1],[126.0, 300, 'K', 1]

W/K2
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150231, 150234)
, PF0.30rmW/K2m<missing VAR> withc<missing VAR>rm opt3.1times 10-5 at 300K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[187.0, 20, ',', 4],[167.0, 0.497, 'eV', 4],[18.0, 300, 'K', 0],[96.0, 20, ',', 1],[121.0, 300, 'K', 1]

In
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150255, 150255)
 In addition, the electronic thermalconductivity has been estimated, which turn out to be much smaller than thephonon thermal conductivity, leading to the figure of merit as ZTsim 0.1 forN-substituted (20,0) SWCNTs with c<missing VAR>rm opt3.1times 10-5 at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 20, ',', 5],[191.0, 0.497, 'eV', 5],[3.0, 300, 'K', 1],[75.0, 20, ',', 0],[100.0, 300, 'K', 0]

N
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150325, 150325)
 In addition, the electronic thermalconductivity has been estimated, which turn out to be much smaller than thephonon thermal conductivity, leading to the figure of merit as ZTsim 0.1 forN-substituted (20,0) SWCNTs with c<missing VAR>rm opt3.1times 10-5 at 300K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 20, ',', 5],[261.0, 0.497, 'eV', 5],[73.0, 300, 'K', 1],[5.0, 20, ',', 0],[30.0, 300, 'K', 0]

SWCN
###Optimal Thermoelectric Power Factor of Narrow-Gap Semiconducting Carbon Nanotubes with Randomly Substituted Impurities|Manaho Matsubara,Kenji Sasaoka,Takahiro Yamamoto,Hidetoshi Fukuyama###
(150335, 150338)
 In addition, the electronic thermalconductivity has been estimated, which turn out to be much smaller than thephonon thermal conductivity, leading to the figure of merit as ZTsim 0.1 forN-substituted (20,0) SWCNTs with c<missing VAR>rm opt3.1times 10-5 at 300K.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 20, ',', 5],[271.0, 0.497, 'eV', 5],[83.0, 300, 'K', 1],[5.0, 20, ',', 0],[17.0, 300, 'K', 0]

Ni
###Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy|Muthusamy Omprakash,Saurabh Singh,Keisuke Hirata,Kentaro Kuga,Santhanakrishnan Harish,Masaru Shimomura,Masahiro Adachi,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(150402, 150402)
Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p<missing VAR>-type Si-Ge alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 0.01, ',', 3],[212.0, 0.02, ',', 3],[215.0, 0.03, ',', 3],[312.0, 2.3, 'Wm', 4],[320.0, 1000, 'K', 4],[337.0, 1.47, 'Wm', 5],[341.0, -1, ',', 5],[377.0, 1000, 'K', 5]

B
###Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy|Muthusamy Omprakash,Saurabh Singh,Keisuke Hirata,Kentaro Kuga,Santhanakrishnan Harish,Masaru Shimomura,Masahiro Adachi,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(150406, 150406)
Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p<missing VAR>-type Si-Ge alloy.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 0.01, ',', 3],[208.0, 0.02, ',', 3],[211.0, 0.03, ',', 3],[308.0, 2.3, 'Wm', 4],[316.0, 1000, 'K', 4],[333.0, 1.47, 'Wm', 5],[337.0, -1, ',', 5],[373.0, 1000, 'K', 5]

Si
###Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy|Muthusamy Omprakash,Saurabh Singh,Keisuke Hirata,Kentaro Kuga,Santhanakrishnan Harish,Masaru Shimomura,Masahiro Adachi,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(150416, 150416)
Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p<missing VAR>-type Si-Ge alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 0.01, ',', 3],[198.0, 0.02, ',', 3],[201.0, 0.03, ',', 3],[298.0, 2.3, 'Wm', 4],[306.0, 1000, 'K', 4],[323.0, 1.47, 'Wm', 5],[327.0, -1, ',', 5],[363.0, 1000, 'K', 5]

Ge
###Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy|Muthusamy Omprakash,Saurabh Singh,Keisuke Hirata,Kentaro Kuga,Santhanakrishnan Harish,Masaru Shimomura,Masahiro Adachi,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(150418, 150418)
Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p<missing VAR>-type Si-Ge alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 0.01, ',', 3],[196.0, 0.02, ',', 3],[199.0, 0.03, ',', 3],[296.0, 2.3, 'Wm', 4],[304.0, 1000, 'K', 4],[321.0, 1.47, 'Wm', 5],[325.0, -1, ',', 5],[361.0, 1000, 'K', 5]

Si
###Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy|Muthusamy Omprakash,Saurabh Singh,Keisuke Hirata,Kentaro Kuga,Santhanakrishnan Harish,Masaru Shimomura,Masahiro Adachi,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(150450, 150450)
 For simultaneously achieving the high-power factor and low lattice thermalconductivity of Si-Ge based thermoelectric materials, we employed, in thisstudy, constructively modifying the electronic structure near the chemicalpotential and nano-structuring by low temperature and high-pressure sinteringon nano-crystalline powders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 0.01, ',', 2],[164.0, 0.02, ',', 2],[167.0, 0.03, ',', 2],[264.0, 2.3, 'Wm', 3],[272.0, 1000, 'K', 3],[289.0, 1.47, 'Wm', 4],[293.0, -1, ',', 4],[329.0, 1000, 'K', 4]

Ge
###Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy|Muthusamy Omprakash,Saurabh Singh,Keisuke Hirata,Kentaro Kuga,Santhanakrishnan Harish,Masaru Shimomura,Masahiro Adachi,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(150452, 150452)
 For simultaneously achieving the high-power factor and low lattice thermalconductivity of Si-Ge based thermoelectric materials, we employed, in thisstudy, constructively modifying the electronic structure near the chemicalpotential and nano-structuring by low temperature and high-pressure sinteringon nano-crystalline powders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 0.01, ',', 2],[162.0, 0.02, ',', 2],[165.0, 0.03, ',', 2],[262.0, 2.3, 'Wm', 3],[270.0, 1000, 'K', 3],[287.0, 1.47, 'Wm', 4],[291.0, -1, ',', 4],[327.0, 1000, 'K', 4]

Si0.65-xGe0.32Ni0.03
###Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy|Muthusamy Omprakash,Saurabh Singh,Keisuke Hirata,Kentaro Kuga,Santhanakrishnan Harish,Masaru Shimomura,Masahiro Adachi,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(150597, 150604)
 The nanostructured samples with the nominalcomposition of Si0.65-xGe0.32Ni0.03Bx (x<missing VAR>  0.01, 0.02, 0.03, and 0.04) weresynthesized by the mechanical alloying followed low-temperature andhigh-pressure sintering process.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 0.01, ',', 0],[10.0, 0.02, ',', 0],[13.0, 0.03, ',', 0],[110.0, 2.3, 'Wm', 1],[118.0, 1000, 'K', 1],[135.0, 1.47, 'Wm', 2],[139.0, -1, ',', 2],[175.0, 1000, 'K', 2]

VK
###Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy|Muthusamy Omprakash,Saurabh Singh,Keisuke Hirata,Kentaro Kuga,Santhanakrishnan Harish,Masaru Shimomura,Masahiro Adachi,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(150674, 150675)
 A large magnitude of Seebeck coefficientreaching 321 muVK-1 together with a small electrical resistivity of 4.49m<missing VAR>Omegacm, leads to a large power factor of 2.3 Wm-1K-2 at 1000 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.01, ',', 1],[60.0, 0.02, ',', 1],[57.0, 0.03, ',', 1],[39.0, 2.3, 'Wm', 0],[47.0, 1000, 'K', 0],[64.0, 1.47, 'Wm', 1],[68.0, -1, ',', 1],[104.0, 1000, 'K', 1]

K
###Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy|Muthusamy Omprakash,Saurabh Singh,Keisuke Hirata,Kentaro Kuga,Santhanakrishnan Harish,Masaru Shimomura,Masahiro Adachi,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(150717, 150717)
 A large magnitude of Seebeck coefficientreaching 321 muVK-1 together with a small electrical resistivity of 4.49m<missing VAR>Omegacm, leads to a large power factor of 2.3 Wm-1K-2 at 1000 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 0.01, ',', 1],[103.0, 0.02, ',', 1],[100.0, 0.03, ',', 1],[3.0, 2.3, 'Wm', 0],[5.0, 1000, 'K', 0],[22.0, 1.47, 'Wm', 1],[26.0, -1, ',', 1],[62.0, 1000, 'K', 1]

K
###Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy|Muthusamy Omprakash,Saurabh Singh,Keisuke Hirata,Kentaro Kuga,Santhanakrishnan Harish,Masaru Shimomura,Masahiro Adachi,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(150742, 150742)
 Withsuccessfully reduced thermal conductivity down to 1.47 Wm-1K-1, a large valueof ZT 1.56 was obtained for Si0.65-xGe0.32Ni0.03B0.03 at 1000 K<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 0.01, ',', 2],[128.0, 0.02, ',', 2],[125.0, 0.03, ',', 2],[28.0, 2.3, 'Wm', 1],[20.0, 1000, 'K', 1],[3.0, 1.47, 'Wm', 0],[1.0, -1, ',', 0],[37.0, 1000, 'K', 0]

Si0.65-xGe0.32Ni0.03B0.03
###Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy|Muthusamy Omprakash,Saurabh Singh,Keisuke Hirata,Kentaro Kuga,Santhanakrishnan Harish,Masaru Shimomura,Masahiro Adachi,Yoshiyuki Yamamoto,Masaharu Matsunami,Tsunehiro Takeuchi###
(150767, 150776)
 Withsuccessfully reduced thermal conductivity down to 1.47 Wm-1K-1, a large valueof ZT 1.56 was obtained for Si0.65-xGe0.32Ni0.03B0.03 at 1000 K<missing PERIOD>
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[156.0, 0.01, ',', 2],[153.0, 0.02, ',', 2],[150.0, 0.03, ',', 2],[53.0, 2.3, 'Wm', 1],[45.0, 1000, 'K', 1],[28.0, 1.47, 'Wm', 0],[24.0, -1, ',', 0],[3.0, 1000, 'K', 0]

Sr2Nb2O7
###Efficient thermoelectricity in Sr$_2$Nb$_2$O$_7$ with energy-dependent relaxation times|Giulio Casu,Andrea Bosin,Vincenzo Fiorentini###
(150795, 150800)
Efficient thermoelectricity in Sr2Nb2O7 with energy-dependent relaxation times.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 0.4, 'at', 2],[147.0, 2.4, 'at', 2],[148.0, 1250, 'K', 2],[169.0, -3, ',', 2],[196.0, 250, 'to', 3]

Sr2Nb2O7
###Efficient thermoelectricity in Sr$_2$Nb$_2$O$_7$ with energy-dependent relaxation times|Giulio Casu,Andrea Bosin,Vincenzo Fiorentini###
(150834, 150839)
 We evaluate theoretically the thermoelectric efficiency of the layeredperovskite Sr2Nb2O7 via calculations of the electronic structure andtransport coefficients within density-functional theory and Bloch-Boltzmannrelaxation-time transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.4, 'at', 1],[108.0, 2.4, 'at', 1],[109.0, 1250, 'K', 1],[130.0, -3, ',', 1],[157.0, 250, 'to', 2]

V/K
###Efficient thermoelectricity in Sr$_2$Nb$_2$O$_7$ with energy-dependent relaxation times|Giulio Casu,Andrea Bosin,Vincenzo Fiorentini###
(151001, 151003)
 The Seebeckcoefficient is about 250 to 300 muV/K at optimal doping, and reaches 800muV/K at lower doping.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[62.0, 0.4, 'at', 1],[54.0, 2.4, 'at', 1],[53.0, 1250, 'K', 1],[32.0, -3, ',', 1],[5.0, 250, 'to', 0]

V/K
###Efficient thermoelectricity in Sr$_2$Nb$_2$O$_7$ with energy-dependent relaxation times|Giulio Casu,Andrea Bosin,Vincenzo Fiorentini###
(151020, 151022)
 The Seebeckcoefficient is about 250 to 300 muV/K at optimal doping, and reaches 800muV/K at lower doping.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[81.0, 0.4, 'at', 1],[73.0, 2.4, 'at', 1],[72.0, 1250, 'K', 1],[51.0, -3, ',', 1],[24.0, 250, 'to', 0]

Sr2BiAu
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151171, 151174)
 We report first-principles density-functional study of electron-phononinteractions and thermoelectric transport properties of full-Heusler compoundsSr2BiAu and Sr2SbAu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2SbAu
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151178, 151181)
 We report first-principles density-functional study of electron-phononinteractions and thermoelectric transport properties of full-Heusler compoundsSr2BiAu and Sr2SbAu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2BiAu
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151264, 151267)
 Sr2BiAu, whichfeatures ten energy-aligned low effective mass pockets (six along Gamma-X<missing VAR>and four at L), is predicted to deliver n<missing VAR>-type zT0.4-4.9 atT<missing VAR>100-700K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151334, 151334)
 Sr2BiAu, whichfeatures ten energy-aligned low effective mass pockets (six along Gamma-X<missing VAR>and four at L), is predicted to deliver n<missing VAR>-type zT0.4-4.9 atT<missing VAR>100-700K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba2BiAu
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151347, 151350)
 Comparison with the previously investigated Ba2BiAucompound shows that the additional L<missing VAR>-pockets in Sr2BiAu significantlyincrease its low-temperature power factor to a maximum value of12mWm-1K-2 near T<missing VAR>300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2BiAu
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151369, 151372)
 Comparison with the previously investigated Ba2BiAucompound shows that the additional L<missing VAR>-pockets in Sr2BiAu significantlyincrease its low-temperature power factor to a maximum value of12mWm-1K-2 near T<missing VAR>300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151406, 151406)
 Comparison with the previously investigated Ba2BiAucompound shows that the additional L<missing VAR>-pockets in Sr2BiAu significantlyincrease its low-temperature power factor to a maximum value of12mWm-1K-2 near T<missing VAR>300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151414, 151414)
 Comparison with the previously investigated Ba2BiAucompound shows that the additional L<missing VAR>-pockets in Sr2BiAu significantlyincrease its low-temperature power factor to a maximum value of12mWm-1K-2 near T<missing VAR>300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2BiAu
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151435, 151438)
 However, at high temperatures thepower factor of Sr2BiAu drops below that of Ba2BiAu because the L<missing VAR>states are heavier and subject to strong scattering by phonon deformation asopposed to the lighter Gamma-X<missing VAR> states that are limited by polar-opticalscattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba2BiAu
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151448, 151451)
 However, at high temperatures thepower factor of Sr2BiAu drops below that of Ba2BiAu because the L<missing VAR>states are heavier and subject to strong scattering by phonon deformation asopposed to the lighter Gamma-X<missing VAR> states that are limited by polar-opticalscattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2SbAu
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151515, 151518)
 Sr2SbAu is predicted to deliver lower n<missing VAR>-type of zT3.4 atT<missing VAR>750K due to appreciable misalignment between the L<missing VAR> and Gamma-X<missing VAR>carrier pockets, generally heavier scattering, and slightly higher latticethermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151545, 151545)
 Sr2SbAu is predicted to deliver lower n<missing VAR>-type of zT3.4 atT<missing VAR>750K due to appreciable misalignment between the L<missing VAR> and Gamma-X<missing VAR>carrier pockets, generally heavier scattering, and slightly higher latticethermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###High Thermoelectric Performance and Defect Energetics of Multi-pocketed Full-Heusler Compounds|Junsoo Park,Yi Xia,Alex Ganose,Anubhav Jain,Vidvuds Ozolins###
(151675, 151675)
 The dominant intrinsic defects are found to be Auvacancies, which drive the Fermi level towards the conduction band and work infavor of n<missing VAR>-doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeVSb
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151757, 151759)
First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 1200, 'K', 7],[351.0, 300, 'K', 9],[395.0, 500, 'K', 10],[473.0, 1200, 'K', 12],[568.0, 1200, 'K', 13],[571.0, 300, 'K', 13]

In
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151766, 151766)
 In this work, we have studied the electronic structure of a promisingthermoelectric half-Heusler FeVSb using FP-L<missing VAR>APW method and SCAN meta-GGAincluding spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 1200, 'K', 6],[344.0, 300, 'K', 8],[388.0, 500, 'K', 9],[466.0, 1200, 'K', 11],[561.0, 1200, 'K', 12],[564.0, 300, 'K', 12]

FeVSb
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151798, 151800)
 In this work, we have studied the electronic structure of a promisingthermoelectric half-Heusler FeVSb using FP-L<missing VAR>APW method and SCAN meta-GGAincluding spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 1200, 'K', 6],[310.0, 300, 'K', 8],[354.0, 500, 'K', 9],[432.0, 1200, 'K', 11],[527.0, 1200, 'K', 12],[530.0, 300, 'K', 12]

FP
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151804, 151805)
 In this work, we have studied the electronic structure of a promisingthermoelectric half-Heusler FeVSb using FP-L<missing VAR>APW method and SCAN meta-GGAincluding spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 1200, 'K', 6],[305.0, 300, 'K', 8],[349.0, 500, 'K', 9],[427.0, 1200, 'K', 11],[522.0, 1200, 'K', 12],[525.0, 300, 'K', 12]

PW
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151809, 151810)
 In this work, we have studied the electronic structure of a promisingthermoelectric half-Heusler FeVSb using FP-L<missing VAR>APW method and SCAN meta-GGAincluding spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 1200, 'K', 6],[300.0, 300, 'K', 8],[344.0, 500, 'K', 9],[422.0, 1200, 'K', 11],[517.0, 1200, 'K', 12],[520.0, 300, 'K', 12]

SC
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151816, 151817)
 In this work, we have studied the electronic structure of a promisingthermoelectric half-Heusler FeVSb using FP-L<missing VAR>APW method and SCAN meta-GGAincluding spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 1200, 'K', 6],[293.0, 300, 'K', 8],[337.0, 500, 'K', 9],[415.0, 1200, 'K', 11],[510.0, 1200, 'K', 12],[513.0, 300, 'K', 12]

N
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151819, 151819)
 In this work, we have studied the electronic structure of a promisingthermoelectric half-Heusler FeVSb using FP-L<missing VAR>APW method and SCAN meta-GGAincluding spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 1200, 'K', 6],[291.0, 300, 'K', 8],[335.0, 500, 'K', 9],[413.0, 1200, 'K', 11],[508.0, 1200, 'K', 12],[511.0, 300, 'K', 12]

S
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151871, 151871)
 Using the obtained electronic structure andtransport calculations we try to address the experimental Seebeck coefficientS of FeVSb samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 1200, 'K', 5],[239.0, 300, 'K', 7],[283.0, 500, 'K', 8],[361.0, 1200, 'K', 10],[456.0, 1200, 'K', 11],[459.0, 300, 'K', 11]

FeVSb
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151875, 151877)
 Using the obtained electronic structure andtransport calculations we try to address the experimental Seebeck coefficientS of FeVSb samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 1200, 'K', 5],[233.0, 300, 'K', 7],[277.0, 500, 'K', 8],[355.0, 1200, 'K', 10],[450.0, 1200, 'K', 11],[453.0, 300, 'K', 11]

S
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151899, 151899)
 The good agreement between the experimental andcalculated S suggests the band gap could be sim0.7 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1200, 'K', 4],[211.0, 300, 'K', 6],[255.0, 500, 'K', 7],[333.0, 1200, 'K', 9],[428.0, 1200, 'K', 10],[431.0, 300, 'K', 10]

V
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151917, 151917)
 The good agreement between the experimental andcalculated S suggests the band gap could be sim0.7 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1200, 'K', 4],[193.0, 300, 'K', 6],[237.0, 500, 'K', 7],[315.0, 1200, 'K', 9],[410.0, 1200, 'K', 10],[413.0, 300, 'K', 10]

V
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(151947, 151947)
 This is supportedby the obtained mBJ band gap of sim0.7 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1200, 'K', 3],[163.0, 300, 'K', 5],[207.0, 500, 'K', 6],[285.0, 1200, 'K', 8],[380.0, 1200, 'K', 9],[383.0, 300, 'K', 9]

FeVSb
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(152077, 152079)
 Using the first-principlesanharmonic phonon calculations, the lattice thermal conductivity kappaphof FeVSb is obtained under single-mode relaxation time approximationconsidering the phonon-phonon interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1200, 'K', 1],[31.0, 300, 'K', 1],[75.0, 500, 'K', 2],[153.0, 1200, 'K', 4],[248.0, 1200, 'K', 5],[251.0, 300, 'K', 5]

At
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(152109, 152109)
 At 300 K, the calculatedkappaph is sim18.6 Wm<missing VAR>-1K-1 which is higher compared toexperimental value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1200, 'K', 2],[1.0, 300, 'K', 0],[45.0, 500, 'K', 1],[123.0, 1200, 'K', 3],[218.0, 1200, 'K', 4],[221.0, 300, 'K', 4]

W
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(152126, 152126)
 At 300 K, the calculatedkappaph is sim18.6 Wm<missing VAR>-1K-1 which is higher compared toexperimental value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1200, 'K', 2],[16.0, 300, 'K', 0],[28.0, 500, 'K', 1],[106.0, 1200, 'K', 3],[201.0, 1200, 'K', 4],[204.0, 300, 'K', 4]

K
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(152130, 152130)
 At 300 K, the calculatedkappaph is sim18.6 Wm<missing VAR>-1K-1 which is higher compared toexperimental value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 1200, 'K', 2],[20.0, 300, 'K', 0],[24.0, 500, 'K', 1],[102.0, 1200, 'K', 3],[197.0, 1200, 'K', 4],[200.0, 300, 'K', 4]

FeVSb
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(152209, 152211)
 A prediction of figure of merit ZT and efficiencyfor p<missing VAR>-type and n<missing VAR>-type FeVSb is made by finding out optimal carrierconcentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 1200, 'K', 4],[99.0, 300, 'K', 2],[55.0, 500, 'K', 1],[21.0, 1200, 'K', 1],[116.0, 1200, 'K', 2],[119.0, 300, 'K', 2]

At
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(152231, 152231)
 At 1200 K, a maximum ZT of sim0.66 and sim0.44 isexpected for p<missing VAR>-type and n<missing VAR>-type FeVSb, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 1200, 'K', 5],[121.0, 300, 'K', 3],[77.0, 500, 'K', 2],[1.0, 1200, 'K', 0],[96.0, 1200, 'K', 1],[99.0, 300, 'K', 1]

FeVSb
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(152269, 152271)
 At 1200 K, a maximum ZT of sim0.66 and sim0.44 isexpected for p<missing VAR>-type and n<missing VAR>-type FeVSb, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 1200, 'K', 5],[159.0, 300, 'K', 3],[115.0, 500, 'K', 2],[37.0, 1200, 'K', 0],[56.0, 1200, 'K', 1],[59.0, 300, 'K', 1]

FeVSb
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(152355, 152357)
 A possibilityof achieving n<missing VAR>-type and p<missing VAR>-type FeVSb by various elemental doping/vacancy isalso discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 1200, 'K', 7],[245.0, 300, 'K', 5],[201.0, 500, 'K', 4],[123.0, 1200, 'K', 2],[28.0, 1200, 'K', 1],[25.0, 300, 'K', 1]

FeVSb
###First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler|Shivprasad S. Shastri,Sudhir K. Pandey###
(152402, 152404)
 Our study is expected to help in further exploring thethermoelectric material FeVSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 1200, 'K', 8],[292.0, 300, 'K', 6],[248.0, 500, 'K', 5],[170.0, 1200, 'K', 3],[75.0, 1200, 'K', 2],[72.0, 300, 'K', 2]

In
###Hierarchically nanostructured thermoelectric materials: Challenges and opportunities for improved power factors|Neophytos Neophytou,Vassilios Vargiamidis,Samuel Foster,Patrizio Graziosi,Laura de Sousa Oliveira,Dhritiman Chakraborty,Zhen Li,Mischa Thesberg,Hans Kosina,Nick Bennett,Giovanni Pennelli,Dario Narducci###
(152655, 152655)
 Inthese new generation of nanostructured materials, phonon scattering centers ofdifferent sizes and geometrical configurations (atomic, nano- and macro-scale)are formed, which are able to scatter phonons of mean-free-paths across thespectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiAu
###High thermoelectric performance in metallic NiAu alloys|Fabian Garmroudi,Michael Parzer,Alexander Riss,Cédric Bourgès,Sergii Khmelevskyi,Takao Mori,Ernst Bauer,Andrej Pustogow###
(153058, 153059)
High thermoelectric performance in metallic NiAu alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 34, 'mWm', 5],[307.0, 300, 'to', 5],[308.0, 1100, 'K', 5],[360.0, 0.5, ',', 6]

NiAu
###High thermoelectric performance in metallic NiAu alloys|Fabian Garmroudi,Michael Parzer,Alexander Riss,Cédric Bourgès,Sergii Khmelevskyi,Takao Mori,Ernst Bauer,Andrej Pustogow###
(153313, 153314)
 Based on our theoretical predictions, we identify binaryNiAu alloys as promising candidate materials and experimentally discovercolossal power factors up to 34 mWm-1K-2 (on average 30m<missing VAR>Wm-1K-2 from 300 to 1100 K), which is more than twice larger than inany known bulk material above room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 34, 'mWm', 0],[52.0, 300, 'to', 0],[53.0, 1100, 'K', 0],[105.0, 0.5, ',', 1]

K
###High thermoelectric performance in metallic NiAu alloys|Fabian Garmroudi,Michael Parzer,Alexander Riss,Cédric Bourgès,Sergii Khmelevskyi,Takao Mori,Ernst Bauer,Andrej Pustogow###
(153345, 153345)
 Based on our theoretical predictions, we identify binaryNiAu alloys as promising candidate materials and experimentally discovercolossal power factors up to 34 mWm-1K-2 (on average 30m<missing VAR>Wm-1K-2 from 300 to 1100 K), which is more than twice larger than inany known bulk material above room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 34, 'mWm', 0],[21.0, 300, 'to', 0],[22.0, 1100, 'K', 0],[74.0, 0.5, ',', 1]

K
###High thermoelectric performance in metallic NiAu alloys|Fabian Garmroudi,Michael Parzer,Alexander Riss,Cédric Bourgès,Sergii Khmelevskyi,Takao Mori,Ernst Bauer,Andrej Pustogow###
(153361, 153361)
 Based on our theoretical predictions, we identify binaryNiAu alloys as promising candidate materials and experimentally discovercolossal power factors up to 34 mWm-1K-2 (on average 30m<missing VAR>Wm-1K-2 from 300 to 1100 K), which is more than twice larger than inany known bulk material above room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 34, 'mWm', 0],[5.0, 300, 'to', 0],[6.0, 1100, 'K', 0],[58.0, 0.5, ',', 1]

NiAu
###High thermoelectric performance in metallic NiAu alloys|Fabian Garmroudi,Michael Parzer,Alexander Riss,Cédric Bourgès,Sergii Khmelevskyi,Takao Mori,Ernst Bauer,Andrej Pustogow###
(153439, 153440)
 NiAu alloys are not onlyorders of magnitude more conductive than heavily doped semiconductors, but alsohave large Seebeck coefficients originating from an inherently differentphysical mechanism within the Au s<missing VAR> band conduction electrons are highly mobilewhile holes are scattered into more localized Ni d<missing VAR> states, yielding a stronglyenergy-dependent carrier mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 34, 'mWm', 2],[73.0, 300, 'to', 2],[72.0, 1100, 'K', 2],[20.0, 0.5, ',', 1]

Au
###High thermoelectric performance in metallic NiAu alloys|Fabian Garmroudi,Michael Parzer,Alexander Riss,Cédric Bourgès,Sergii Khmelevskyi,Takao Mori,Ernst Bauer,Andrej Pustogow###
(153502, 153502)
 NiAu alloys are not onlyorders of magnitude more conductive than heavily doped semiconductors, but alsohave large Seebeck coefficients originating from an inherently differentphysical mechanism within the Au s<missing VAR> band conduction electrons are highly mobilewhile holes are scattered into more localized Ni d<missing VAR> states, yielding a stronglyenergy-dependent carrier mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 34, 'mWm', 2],[136.0, 300, 'to', 2],[135.0, 1100, 'K', 2],[83.0, 0.5, ',', 1]

Ni
###High thermoelectric performance in metallic NiAu alloys|Fabian Garmroudi,Michael Parzer,Alexander Riss,Cédric Bourgès,Sergii Khmelevskyi,Takao Mori,Ernst Bauer,Andrej Pustogow###
(153533, 153533)
 NiAu alloys are not onlyorders of magnitude more conductive than heavily doped semiconductors, but alsohave large Seebeck coefficients originating from an inherently differentphysical mechanism within the Au s<missing VAR> band conduction electrons are highly mobilewhile holes are scattered into more localized Ni d<missing VAR> states, yielding a stronglyenergy-dependent carrier mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 34, 'mWm', 2],[167.0, 300, 'to', 2],[166.0, 1100, 'K', 2],[114.0, 0.5, ',', 1]

(NCS)2
###Theoretical insight into the thermoelectric behavior of tri-nuclear metal-string complexes laced with gold nanoelectrodes: A first-principles study|Talem Rebeda Roy,Arijit Sen###
(153853, 153858)
 Here we report thethermoelectric behavior of various tr-nuclear metal-string complexes,[M-M-M](dpa)4(NCS)2 for M<missing VAR> in Cr,Ru, bridging Au(111) nanowires asnanoelectrodes.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 300, 'K', 3]

Cr
###Theoretical insight into the thermoelectric behavior of tri-nuclear metal-string complexes laced with gold nanoelectrodes: A first-principles study|Talem Rebeda Roy,Arijit Sen###
(153866, 153866)
 Here we report thethermoelectric behavior of various tr-nuclear metal-string complexes,[M-M-M](dpa)4(NCS)2 for M<missing VAR> in Cr,Ru, bridging Au(111) nanowires asnanoelectrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 300, 'K', 3]

Ru
###Theoretical insight into the thermoelectric behavior of tri-nuclear metal-string complexes laced with gold nanoelectrodes: A first-principles study|Talem Rebeda Roy,Arijit Sen###
(153868, 153868)
 Here we report thethermoelectric behavior of various tr-nuclear metal-string complexes,[M-M-M](dpa)4(NCS)2 for M<missing VAR> in Cr,Ru, bridging Au(111) nanowires asnanoelectrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 300, 'K', 3]

Ru
###Theoretical insight into the thermoelectric behavior of tri-nuclear metal-string complexes laced with gold nanoelectrodes: A first-principles study|Talem Rebeda Roy,Arijit Sen###
(153975, 153975)
 Based on our charge transport analysis fromtextitfirst-principles, we find that the dominant transmission peaks tend tomove away from the Fermi level upon systematic rutheniation in chromium-basedmetal-string complexes due mainly to the coupling of pi orbitals from Ruand sigmanb orbitals from Cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 300, 'K', 2]

Cr
###Theoretical insight into the thermoelectric behavior of tri-nuclear metal-string complexes laced with gold nanoelectrodes: A first-principles study|Talem Rebeda Roy,Arijit Sen###
(153987, 153987)
 Based on our charge transport analysis fromtextitfirst-principles, we find that the dominant transmission peaks tend tomove away from the Fermi level upon systematic rutheniation in chromium-basedmetal-string complexes due mainly to the coupling of pi orbitals from Ruand sigmanb orbitals from Cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 300, 'K', 2]

V/K
###Theoretical insight into the thermoelectric behavior of tri-nuclear metal-string complexes laced with gold nanoelectrodes: A first-principles study|Talem Rebeda Roy,Arijit Sen###
(154099, 154101)
 Our results further suggestthat metal-string complexes can render better thermoelectric devices especiallyat the molecular-scale with the thermopower as high as 172 mu V/K at 300 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[3.0, 300, 'K', 0]

Cr
###Theoretical insight into the thermoelectric behavior of tri-nuclear metal-string complexes laced with gold nanoelectrodes: A first-principles study|Talem Rebeda Roy,Arijit Sen###
(154156, 154156)
Considering the contributions from both electrons and phonons, even a hightextitfigure of merit of ZT sim 2 may be attained for Cr-Cr-Cr basedmetal-string molecular junctions at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 300, 'K', 1]

Cr
###Theoretical insight into the thermoelectric behavior of tri-nuclear metal-string complexes laced with gold nanoelectrodes: A first-principles study|Talem Rebeda Roy,Arijit Sen###
(154158, 154158)
Considering the contributions from both electrons and phonons, even a hightextitfigure of merit of ZT sim 2 may be attained for Cr-Cr-Cr basedmetal-string molecular junctions at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 300, 'K', 1]

Cr
###Theoretical insight into the thermoelectric behavior of tri-nuclear metal-string complexes laced with gold nanoelectrodes: A first-principles study|Talem Rebeda Roy,Arijit Sen###
(154160, 154160)
Considering the contributions from both electrons and phonons, even a hightextitfigure of merit of ZT sim 2 may be attained for Cr-Cr-Cr basedmetal-string molecular junctions at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 300, 'K', 1]

Cr
###Theoretical insight into the thermoelectric behavior of tri-nuclear metal-string complexes laced with gold nanoelectrodes: A first-principles study|Talem Rebeda Roy,Arijit Sen###
(154234, 154234)
 Resonant enhancement inthe thermoelectric efficiency appears to occur in such systems throughalteration of inter-dot electrostatic interactions, which can be controlled byincorporating Cr and Ru atoms in such tri-nuclear metal-string complexes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 300, 'K', 2]

Ru
###Theoretical insight into the thermoelectric behavior of tri-nuclear metal-string complexes laced with gold nanoelectrodes: A first-principles study|Talem Rebeda Roy,Arijit Sen###
(154238, 154238)
 Resonant enhancement inthe thermoelectric efficiency appears to occur in such systems throughalteration of inter-dot electrostatic interactions, which can be controlled byincorporating Cr and Ru atoms in such tri-nuclear metal-string complexes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 300, 'K', 2]

I
###Thermoelectric efficiency at maximum power in low-dimensional systems|Natthapon Nakpathomkun,Hongqi Q. Xu,Heiner Linke###
(154447, 154447)
 Here we study the efficiency at maximum power of threelow-dimensional, thermoelectric systems a zero-dimensional quantum dot (QD)with a Lorentzian transmission resonance of finite width, a one-dimensional(1D) ballistic conductor, and a thermionic (T<missing VAR>I) power generator formed by atwo-dimensional energy barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 36, '%', 3],[169.0, 1, 'D', 4]

In
###Thermoelectric efficiency at maximum power in low-dimensional systems|Natthapon Nakpathomkun,Hongqi Q. Xu,Heiner Linke###
(154470, 154470)
 In all three systems, the efficiency at maximumpower is independent of temperature, and in each case a careful tuning ofrelevant energies is required to achieve maximal performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 36, '%', 2],[146.0, 1, 'D', 3]

I
###Thermoelectric efficiency at maximum power in low-dimensional systems|Natthapon Nakpathomkun,Hongqi Q. Xu,Heiner Linke###
(154621, 154621)
 Whether 1D or T<missing VAR>I systems achieve the larger maximum power outputdepends on temperature and area filling factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 36, '%', 1],[5.0, 1, 'D', 0]

III
###Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(154936, 154938)
 Electronic andthermoelectric properties are determined from ab initio calculations forfew-layer III-VI materials GaS, GaSe, InS, InSe, for Bi2Se3, formonolayer Bi, and for bilayer graphene as a function of vertical field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(154940, 154941)
 Electronic andthermoelectric properties are determined from ab initio calculations forfew-layer III-VI materials GaS, GaSe, InS, InSe, for Bi2Se3, formonolayer Bi, and for bilayer graphene as a function of vertical field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaS
###Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(154945, 154946)
 Electronic andthermoelectric properties are determined from ab initio calculations forfew-layer III-VI materials GaS, GaSe, InS, InSe, for Bi2Se3, formonolayer Bi, and for bilayer graphene as a function of vertical field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaSe
###Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(154949, 154950)
 Electronic andthermoelectric properties are determined from ab initio calculations forfew-layer III-VI materials GaS, GaSe, InS, InSe, for Bi2Se3, formonolayer Bi, and for bilayer graphene as a function of vertical field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InS
###Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(154953, 154954)
 Electronic andthermoelectric properties are determined from ab initio calculations forfew-layer III-VI materials GaS, GaSe, InS, InSe, for Bi2Se3, formonolayer Bi, and for bilayer graphene as a function of vertical field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSe
###Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(154957, 154958)
 Electronic andthermoelectric properties are determined from ab initio calculations forfew-layer III-VI materials GaS, GaSe, InS, InSe, for Bi2Se3, formonolayer Bi, and for bilayer graphene as a function of vertical field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(154963, 154966)
 Electronic andthermoelectric properties are determined from ab initio calculations forfew-layer III-VI materials GaS, GaSe, InS, InSe, for Bi2Se3, formonolayer Bi, and for bilayer graphene as a function of vertical field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(154974, 154974)
 Electronic andthermoelectric properties are determined from ab initio calculations forfew-layer III-VI materials GaS, GaSe, InS, InSe, for Bi2Se3, formonolayer Bi, and for bilayer graphene as a function of vertical field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(155021, 155023)
 Theeffect of interlayer coupling on these properties in few-layer III-VI materialsand Bi2Se3 is described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(155025, 155026)
 Theeffect of interlayer coupling on these properties in few-layer III-VI materialsand Bi2Se3 is described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials|Darshana Wickramaratne,Ferdows Zahid,Roger K. Lake###
(155033, 155036)
 Theeffect of interlayer coupling on these properties in few-layer III-VI materialsand Bi2Se3 is described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiGe
###Enhanced thermoelectric figure-of-merit in boron-doped SiGe thin films by nanograin boundaries|Jianbiao Lu,Ruiqiang Guo,Weijing Dai,Baoling Huang###
(155142, 155143)
Enhanced thermoelectric figure-of-merit in boron-doped SiGe thin films by nanograin boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 120, 'K', 1],[74.0, 300, 'K', 1],[193.0, 50, '%', 3],[244.0, 0.2, 'for', 4],[256.0, 300, 'K', 4],[266.0, 100, '%', 4]

(SiGe)
###Enhanced thermoelectric figure-of-merit in boron-doped SiGe thin films by nanograin boundaries|Jianbiao Lu,Ruiqiang Guo,Weijing Dai,Baoling Huang###
(155166, 155169)
 Boron-doped polycrystalline silicon-germanium (SiGe) thin films are grown bylow-pressure chemical vapor deposition (L<missing VAR>PCVD) and their thermoelectricproperties are characterized from 120 K to 300 K for the potential applicationsin integrated microscale cooling.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 120, 'K', 0],[48.0, 300, 'K', 0],[167.0, 50, '%', 2],[218.0, 0.2, 'for', 3],[230.0, 300, 'K', 3],[240.0, 100, '%', 3]

PCV
###Enhanced thermoelectric figure-of-merit in boron-doped SiGe thin films by nanograin boundaries|Jianbiao Lu,Ruiqiang Guo,Weijing Dai,Baoling Huang###
(155194, 155196)
 Boron-doped polycrystalline silicon-germanium (SiGe) thin films are grown bylow-pressure chemical vapor deposition (L<missing VAR>PCVD) and their thermoelectricproperties are characterized from 120 K to 300 K for the potential applicationsin integrated microscale cooling.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 120, 'K', 0],[21.0, 300, 'K', 0],[140.0, 50, '%', 2],[191.0, 0.2, 'for', 3],[203.0, 300, 'K', 3],[213.0, 100, '%', 3]

SiGe
###Enhanced thermoelectric figure-of-merit in boron-doped SiGe thin films by nanograin boundaries|Jianbiao Lu,Ruiqiang Guo,Weijing Dai,Baoling Huang###
(155329, 155330)
 Particularly, the unique columnar grainstructures result in remarkable thermal conductivity anisotropy with thein-plane thermal conductivities of SiGe films about 50% lower than thecross-plane values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 120, 'K', 2],[112.0, 300, 'K', 2],[6.0, 50, '%', 0],[57.0, 0.2, 'for', 1],[69.0, 300, 'K', 1],[79.0, 100, '%', 1]

SiGe
###Enhanced thermoelectric figure-of-merit in boron-doped SiGe thin films by nanograin boundaries|Jianbiao Lu,Ruiqiang Guo,Weijing Dai,Baoling Huang###
(155389, 155390)
 By optimizing the growth conditions and doping level, ahigh figure of merit (ZT) of 0.2 for SiGe films is achieved at 300 K, which isabout 100% higher than the previous record for p<missing VAR>-type SiGe alloys, mainly dueto the significant reduction in the in-plane thermal conductivity caused bynanograin boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 120, 'K', 3],[172.0, 300, 'K', 3],[53.0, 50, '%', 1],[2.0, 0.2, 'for', 0],[9.0, 300, 'K', 0],[19.0, 100, '%', 0]

SiGe
###Enhanced thermoelectric figure-of-merit in boron-doped SiGe thin films by nanograin boundaries|Jianbiao Lu,Ruiqiang Guo,Weijing Dai,Baoling Huang###
(155428, 155429)
 By optimizing the growth conditions and doping level, ahigh figure of merit (ZT) of 0.2 for SiGe films is achieved at 300 K, which isabout 100% higher than the previous record for p<missing VAR>-type SiGe alloys, mainly dueto the significant reduction in the in-plane thermal conductivity caused bynanograin boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 120, 'K', 3],[211.0, 300, 'K', 3],[92.0, 50, '%', 1],[41.0, 0.2, 'for', 0],[29.0, 300, 'K', 0],[19.0, 100, '%', 0]

PCV
###Enhanced thermoelectric figure-of-merit in boron-doped SiGe thin films by nanograin boundaries|Jianbiao Lu,Ruiqiang Guo,Weijing Dai,Baoling Huang###
(155484, 155486)
 The low cost and excellent scalability of L<missing VAR>PCVD<missing VAR> renderthese high-performance SiGe films ideal candidates for thin-film thermoelectricapplications.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 120, 'K', 4],[267.0, 300, 'K', 4],[148.0, 50, '%', 2],[97.0, 0.2, 'for', 1],[85.0, 300, 'K', 1],[75.0, 100, '%', 1]

SiGe
###Enhanced thermoelectric figure-of-merit in boron-doped SiGe thin films by nanograin boundaries|Jianbiao Lu,Ruiqiang Guo,Weijing Dai,Baoling Huang###
(155498, 155499)
 The low cost and excellent scalability of L<missing VAR>PCVD<missing VAR> renderthese high-performance SiGe films ideal candidates for thin-film thermoelectricapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 120, 'K', 4],[281.0, 300, 'K', 4],[162.0, 50, '%', 2],[111.0, 0.2, 'for', 1],[99.0, 300, 'K', 1],[89.0, 100, '%', 1]

PbSe
###Understanding the role and interplay of heavy hole and light hole valence bands in the thermoelectric properties of PbSe|Thomas C. Chasapis,Yeseul Lee,Euripides Hatzikraniotis,Konstantinos M. Paraskevopoulos,Hang Chi,Ctirad Uher,Mercouri G. Kanatzidis###
(155563, 155564)
Understanding the role and interplay of heavy hole and light hole valence bands in the thermoelectric properties of PbSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 0.27, 'mo', 6],[303.0, 2.5, 'mo', 8],[406.0, 650, 'K', 10]

PbSe
###Understanding the role and interplay of heavy hole and light hole valence bands in the thermoelectric properties of PbSe|Thomas C. Chasapis,Yeseul Lee,Euripides Hatzikraniotis,Konstantinos M. Paraskevopoulos,Hang Chi,Ctirad Uher,Mercouri G. Kanatzidis###
(155575, 155576)
 The thermoelectric properties of PbSe have significantly improved in recentyears reaching figures of merit ZT 1.6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0.27, 'mo', 5],[291.0, 2.5, 'mo', 7],[394.0, 650, 'K', 9]

PbSe
###Understanding the role and interplay of heavy hole and light hole valence bands in the thermoelectric properties of PbSe|Thomas C. Chasapis,Yeseul Lee,Euripides Hatzikraniotis,Konstantinos M. Paraskevopoulos,Hang Chi,Ctirad Uher,Mercouri G. Kanatzidis###
(155628, 155629)
 The transport properties of the holedoped high temperature thermoelectric material PbSe are particularlyinteresting and play a key role in this.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.27, 'mo', 4],[238.0, 2.5, 'mo', 6],[341.0, 650, 'K', 8]

In
###Thermoelectric properties of a ferromagnet-superconductor hybrid junction: Role of interfacial Rashba spin-orbit interaction|Paramita Dutta,Arijit Saha,A. M. Jayannavar###
(156309, 156309)
 In presence of interfacial Rashbaspin-orbit interaction, Seebeck coefficient rises with the increase of barrierstrength and polarization at weak or moderate interfacial Rashba field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermoelectric properties of an interacting quantum dot-based heat engine|Paolo Andrea Erdman,Francesco Mazza,Riccardo Bosisio,Giuliano Benenti,Rosario Fazio,Fabio Taddei###
(156702, 156702)
 In the case ofsystems with two and three terminals we derive formulas for the power factor Q<missing VAR>and the figure of merit ZT for a QD-based heat engine, identifying optimalworking conditions which maximize output power and efficiency of heat-to-workconversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Thermoelectric properties of an interacting quantum dot-based heat engine|Paolo Andrea Erdman,Francesco Mazza,Riccardo Bosisio,Giuliano Benenti,Rosario Fazio,Fabio Taddei###
(156978, 156978)
 At last we study howenergy level degeneracy can increase the output power.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3|G. J. Shu,S. C. Liou,S. K. Karna,R. Sankar,M. Hayashi,F. C. Chou###
(157038, 157041)
Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 2, 'D', 3],[309.0, 4, 'pz', 4],[395.0, 2, 'D', 5]

Bi2Se3
###Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3|G. J. Shu,S. C. Liou,S. K. Karna,R. Sankar,M. Hayashi,F. C. Chou###
(157054, 157057)
 Layered narrow band gap semiconductor Bi2Se3 is composed of heavy elementswith strong spin-orbital coupling (SOC), which has been identified both as agood candidate of thermoelectric material of high thermoelectricfigure-of-merit (ZT) and a topological insulator of Z<missing VAR>2-type with a gaplesssurface band in Dirac cone shape.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2, 'D', 2],[293.0, 4, 'pz', 3],[379.0, 2, 'D', 4]

(SOC)
###Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3|G. J. Shu,S. C. Liou,S. K. Karna,R. Sankar,M. Hayashi,F. C. Chou###
(157080, 157084)
 Layered narrow band gap semiconductor Bi2Se3 is composed of heavy elementswith strong spin-orbital coupling (SOC), which has been identified both as agood candidate of thermoelectric material of high thermoelectricfigure-of-merit (ZT) and a topological insulator of Z<missing VAR>2-type with a gaplesssurface band in Dirac cone shape.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 2, 'D', 2],[266.0, 4, 'pz', 3],[352.0, 2, 'D', 4]

Bi2Se3
###Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3|G. J. Shu,S. C. Liou,S. K. Karna,R. Sankar,M. Hayashi,F. C. Chou###
(157192, 157195)
 The existence of a conjugated pi-bond systemon the surface of each Bi2Se3 quintuple layer is proposed based on an extendedvalence bond model having valence electrons distributed in the hybridizedorbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'D', 1],[155.0, 4, 'pz', 2],[241.0, 2, 'D', 3]

Bi2Se3
###Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3|G. J. Shu,S. C. Liou,S. K. Karna,R. Sankar,M. Hayashi,F. C. Chou###
(157268, 157271)
 Supporting experimental evidences of a 2D conjugated pi-bond systemon each quintuple layer of Bi2Se3 are provided by electron energy-lossspectroscopy (EELS) and electron density (ED) mapping through inverse Fouriertransform of X<missing VAR>-ray diffraction data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'D', 0],[79.0, 4, 'pz', 1],[165.0, 2, 'D', 2]

S
###Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3|G. J. Shu,S. C. Liou,S. K. Karna,R. Sankar,M. Hayashi,F. C. Chou###
(157292, 157292)
 Supporting experimental evidences of a 2D conjugated pi-bond systemon each quintuple layer of Bi2Se3 are provided by electron energy-lossspectroscopy (EELS) and electron density (ED) mapping through inverse Fouriertransform of X<missing VAR>-ray diffraction data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, 'D', 0],[58.0, 4, 'pz', 1],[144.0, 2, 'D', 2]

Se
###Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3|G. J. Shu,S. C. Liou,S. K. Karna,R. Sankar,M. Hayashi,F. C. Chou###
(157356, 157356)
 Quantum chemistry calculations support thepi-bond existence between partially filled 4pz orbitals of Se via side-to-sideorbital overlap positively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, 'D', 1],[6.0, 4, 'pz', 0],[80.0, 2, 'D', 1]

Bi2Se3
###Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3|G. J. Shu,S. C. Liou,S. K. Karna,R. Sankar,M. Hayashi,F. C. Chou###
(157397, 157400)
 The conjugated pi-bond system on the surface ofeach quintuple Bi2Se3 layer is proposed being similar to that found in graphite(graphene) and responsible for the unique 2D conduction mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'D', 2],[47.0, 4, 'pz', 1],[36.0, 2, 'D', 0]

W
###Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3|G. J. Shu,S. C. Liou,S. K. Karna,R. Sankar,M. Hayashi,F. C. Chou###
(157454, 157454)
 The van derWaals (vdW) attractive force between quintuple layers is interpreted beingcoming from the anti-ferroelectrically ordered effective electric dipoles whichare constructed with pi-bond trimer pairs on Se-layers across the vdW gap ofminimized Coulomb repulsion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 2, 'D', 3],[104.0, 4, 'pz', 2],[18.0, 2, 'D', 1]

Se
###Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3|G. J. Shu,S. C. Liou,S. K. Karna,R. Sankar,M. Hayashi,F. C. Chou###
(157511, 157511)
 The van derWaals (vdW) attractive force between quintuple layers is interpreted beingcoming from the anti-ferroelectrically ordered effective electric dipoles whichare constructed with pi-bond trimer pairs on Se-layers across the vdW gap ofminimized Coulomb repulsion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 2, 'D', 3],[161.0, 4, 'pz', 2],[75.0, 2, 'D', 1]

W
###Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3|G. J. Shu,S. C. Liou,S. K. Karna,R. Sankar,M. Hayashi,F. C. Chou###
(157520, 157520)
 The van derWaals (vdW) attractive force between quintuple layers is interpreted beingcoming from the anti-ferroelectrically ordered effective electric dipoles whichare constructed with pi-bond trimer pairs on Se-layers across the vdW gap ofminimized Coulomb repulsion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 2, 'D', 3],[170.0, 4, 'pz', 2],[84.0, 2, 'D', 1]

NiSi3P4
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157550, 157554)
Thermoelectric Properties of Polycrystalline NiSi3P4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2, 'to', 1],[41.0, 775, 'K', 1],[103.0, 300, 'K', 2],[160.0, 150, ',', 3],[178.0, 5, 'x', 4],[256.0, 300, 'K', 5],[291.0, 700, ',', 6],[377.0, 700, 'K', 7]

NiSi3P4
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157583, 157587)
 The Hall and Seebeck coefficients, electrical resistivity and thermalconductivity of polycrystalline NiSi3P4 were characterized from 2 to 775K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'to', 0],[8.0, 775, 'K', 0],[70.0, 300, 'K', 1],[127.0, 150, ',', 2],[145.0, 5, 'x', 3],[223.0, 300, 'K', 4],[258.0, 700, ',', 5],[344.0, 700, 'K', 6]

NiSi3P4
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157601, 157605)
Undoped NiSi3P4 behaves like a narrow gap semiconductor, with activatedelectrical resistivity rho below room temperature and a large Seebeckcoefficient of 400u<missing VAR>V/K at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'to', 1],[6.0, 775, 'K', 1],[52.0, 300, 'K', 0],[109.0, 150, ',', 1],[127.0, 5, 'x', 2],[205.0, 300, 'K', 3],[240.0, 700, ',', 4],[326.0, 700, 'K', 5]

V/K
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157652, 157654)
Undoped NiSi3P4 behaves like a narrow gap semiconductor, with activatedelectrical resistivity rho below room temperature and a large Seebeckcoefficient of 400u<missing VAR>V/K at 300K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 2, 'to', 1],[57.0, 775, 'K', 1],[3.0, 300, 'K', 0],[60.0, 150, ',', 1],[78.0, 5, 'x', 2],[156.0, 300, 'K', 3],[191.0, 700, ',', 4],[277.0, 700, 'K', 5]

K
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157716, 157716)
 Attempts to substitute boron for siliconresulted in the production of extrinsic holes, yielding moderately-dopedsemiconductor behavior with rho increasing with increasing temperature above150,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2, 'to', 2],[121.0, 775, 'K', 2],[59.0, 300, 'K', 1],[2.0, 150, ',', 0],[16.0, 5, 'x', 1],[94.0, 300, 'K', 2],[129.0, 700, ',', 3],[215.0, 700, 'K', 4]

K
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157743, 157743)
 Hall carrier densities are limited to approximately 5x1019/cm3 at200K, which would suggest the solubility limit of boron is reached if boron isindeed incorporated into the lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 2, 'to', 3],[148.0, 775, 'K', 3],[86.0, 300, 'K', 2],[29.0, 150, ',', 1],[11.0, 5, 'x', 0],[67.0, 300, 'K', 1],[102.0, 700, ',', 2],[188.0, 700, 'K', 3]

V
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157805, 157805)
 These extrinsic samples have a Hallmobility of 12cm2/V/s<missing VAR> at 300K, and a parabolic band equivalent effective massof 3.5 times the free electron mass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 2, 'to', 4],[210.0, 775, 'K', 4],[148.0, 300, 'K', 3],[91.0, 150, ',', 2],[73.0, 5, 'x', 1],[5.0, 300, 'K', 0],[40.0, 700, ',', 1],[126.0, 700, 'K', 2]

At
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157843, 157843)
 At 700,K, the thermoelectric figure ofmerit zT reaches 0.1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 2, 'to', 5],[248.0, 775, 'K', 5],[186.0, 300, 'K', 4],[129.0, 150, ',', 3],[111.0, 5, 'x', 2],[33.0, 300, 'K', 1],[2.0, 700, ',', 0],[88.0, 700, 'K', 1]

K
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157847, 157847)
 At 700,K, the thermoelectric figure ofmerit zT reaches 0.1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 2, 'to', 5],[252.0, 775, 'K', 5],[190.0, 300, 'K', 4],[133.0, 150, ',', 3],[115.0, 5, 'x', 2],[37.0, 300, 'K', 1],[2.0, 700, ',', 0],[84.0, 700, 'K', 1]

W
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157924, 157924)
 Further improvements in thermoelectric performance wouldrequire reaching higher carrier densities, as well as a mechanism to furtherreduce the lattice thermal conductivity, which is 5W/m<missing VAR>/K at 700K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 2, 'to', 6],[329.0, 775, 'K', 6],[267.0, 300, 'K', 5],[210.0, 150, ',', 4],[192.0, 5, 'x', 3],[114.0, 300, 'K', 2],[79.0, 700, ',', 1],[7.0, 700, 'K', 0]

K
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157928, 157928)
 Further improvements in thermoelectric performance wouldrequire reaching higher carrier densities, as well as a mechanism to furtherreduce the lattice thermal conductivity, which is 5W/m<missing VAR>/K at 700K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 2, 'to', 6],[333.0, 775, 'K', 6],[271.0, 300, 'K', 5],[214.0, 150, ',', 4],[196.0, 5, 'x', 3],[118.0, 300, 'K', 2],[83.0, 700, ',', 1],[3.0, 700, 'K', 0]

Ge
###Thermoelectric Properties of Polycrystalline NiSi3P4|Andrew F. May,Michael A. McGuire,Hsin Wang###
(157939, 157939)
 Alloying inGe results in a slight reduction of the thermal conductivity at lowtemperatures, with little influence observed at higher temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 2, 'to', 7],[344.0, 775, 'K', 7],[282.0, 300, 'K', 6],[225.0, 150, ',', 5],[207.0, 5, 'x', 4],[129.0, 300, 'K', 3],[94.0, 700, ',', 2],[8.0, 700, 'K', 1]

In
###The influence of non-idealities on the thermoelectric power factor of nanostructured superlattices|Mischa Thesberg,Mahdi Pourfath,Hans Kosina,Neophytos Neophytou###
(158179, 158179)
 In this work, we employ quantum mechanical electronic transportsimulations to outline the detrimental effects of random variation,imperfections and nonoptimal barrier shapes in a superlattice geometry on thesepredicted power factor improvements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 40, '%', 2],[242.0, 10, '%', 3]

In
###Thermoelectric properties of graphene/boron nitride heterostructures|L. A. Algharagholy,Q. Al-Galiby,H. A. Marhoon,H. Sadeghi,H. M. Abduljalil,C. J. Lambert###
(158598, 158598)
 In such structures, theboron nitride acts as a tunnel barrier, which weakly couples states in thegraphene, to form mini-bands .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 0.9, 'are', 4]

In
###Thermoelectric properties of graphene/boron nitride heterostructures|L. A. Algharagholy,Q. Al-Galiby,H. A. Marhoon,H. Sadeghi,H. M. Abduljalil,C. J. Lambert###
(158649, 158649)
 In un-doped nanoribbons, the mini bands aresymmetrically positioned relative to the Fermi energy and do not enhancethermoelectric performance significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 0.9, 'are', 3]

In
###Thermoelectric properties of graphene/boron nitride heterostructures|L. A. Algharagholy,Q. Al-Galiby,H. A. Marhoon,H. Sadeghi,H. M. Abduljalil,C. J. Lambert###
(158697, 158697)
 In contrast, when the ribbons aredoped by electron donating or electron accepting adsorbates, the thermopower Sand electronic figure of merit are enhanced and either positive or negativethermopowers can be obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 0.9, 'are', 2]

S
###Thermoelectric properties of graphene/boron nitride heterostructures|L. A. Algharagholy,Q. Al-Galiby,H. A. Marhoon,H. Sadeghi,H. M. Abduljalil,C. J. Lambert###
(158732, 158732)
 In contrast, when the ribbons aredoped by electron donating or electron accepting adsorbates, the thermopower Sand electronic figure of merit are enhanced and either positive or negativethermopowers can be obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 0.9, 'are', 2]

In
###Thermoelectric properties of graphene/boron nitride heterostructures|L. A. Algharagholy,Q. Al-Galiby,H. A. Marhoon,H. Sadeghi,H. M. Abduljalil,C. J. Lambert###
(158769, 158769)
 In the most favourable case, doping with theelectron donor tetrathiafulvalene (TTF) increases the room-temperaturethermopower to -284 muv<missing VAR>/K and doping by the electron acceptortetracyanoethylene (T<missing VAR>CNE) increases S to 210 muv<missing VAR>/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 0.9, 'are', 1]

F
###Thermoelectric properties of graphene/boron nitride heterostructures|L. A. Algharagholy,Q. Al-Galiby,H. A. Marhoon,H. Sadeghi,H. M. Abduljalil,C. J. Lambert###
(158796, 158796)
 In the most favourable case, doping with theelectron donor tetrathiafulvalene (TTF) increases the room-temperaturethermopower to -284 muv<missing VAR>/K and doping by the electron acceptortetracyanoethylene (T<missing VAR>CNE) increases S to 210 muv<missing VAR>/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0.9, 'are', 1]

K
###Thermoelectric properties of graphene/boron nitride heterostructures|L. A. Algharagholy,Q. Al-Galiby,H. A. Marhoon,H. Sadeghi,H. M. Abduljalil,C. J. Lambert###
(158818, 158818)
 In the most favourable case, doping with theelectron donor tetrathiafulvalene (TTF) increases the room-temperaturethermopower to -284 muv<missing VAR>/K and doping by the electron acceptortetracyanoethylene (T<missing VAR>CNE) increases S to 210 muv<missing VAR>/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0.9, 'are', 1]

CN
###Thermoelectric properties of graphene/boron nitride heterostructures|L. A. Algharagholy,Q. Al-Galiby,H. A. Marhoon,H. Sadeghi,H. M. Abduljalil,C. J. Lambert###
(158837, 158838)
 In the most favourable case, doping with theelectron donor tetrathiafulvalene (TTF) increases the room-temperaturethermopower to -284 muv<missing VAR>/K and doping by the electron acceptortetracyanoethylene (T<missing VAR>CNE) increases S to 210 muv<missing VAR>/K.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.9, 'are', 1]

S
###Thermoelectric properties of graphene/boron nitride heterostructures|L. A. Algharagholy,Q. Al-Galiby,H. A. Marhoon,H. Sadeghi,H. M. Abduljalil,C. J. Lambert###
(158844, 158844)
 In the most favourable case, doping with theelectron donor tetrathiafulvalene (TTF) increases the room-temperaturethermopower to -284 muv<missing VAR>/K and doping by the electron acceptortetracyanoethylene (T<missing VAR>CNE) increases S to 210 muv<missing VAR>/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0.9, 'are', 1]

K
###Thermoelectric properties of graphene/boron nitride heterostructures|L. A. Algharagholy,Q. Al-Galiby,H. A. Marhoon,H. Sadeghi,H. M. Abduljalil,C. J. Lambert###
(158853, 158853)
 In the most favourable case, doping with theelectron donor tetrathiafulvalene (TTF) increases the room-temperaturethermopower to -284 muv<missing VAR>/K and doping by the electron acceptortetracyanoethylene (T<missing VAR>CNE) increases S to 210 muv<missing VAR>/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0.9, 'are', 1]

Si
###Large-scale molecular dynamics investigation of geometrical features in nanoporous Si|Laura de Sousa Oliveira,Neophytos Neophytou###
(159354, 159354)
Large-scale molecular dynamics investigation of geometrical features in nanoporous Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 50, 'different', 5]

In
###Large-scale molecular dynamics investigation of geometrical features in nanoporous Si|Laura de Sousa Oliveira,Neophytos Neophytou###
(159507, 159507)
 In this work, we employ large-scale equilibrium moleculardynamics to perform an exhaustive atomistic-scale investigation of the effectof porosity on thermal transport in nanoporous bulk silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 50, 'different', 1]

In
###Modelling thermoelectric performance in nanoporous nanocrystalline silicon|Laura de Sousa Oliveira,Vassilios Vargiamidis,Neophytos Neophytou###
(159998, 159998)
 In order todetermine the tradeoff between the degradation of the lattice thermalconductivity and of the power factor due to this, we perform a theoreticalinvestigation of both phonon and electron transport in nanocrystalline,nanoporous Si geometries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Modelling thermoelectric performance in nanoporous nanocrystalline silicon|Laura de Sousa Oliveira,Vassilios Vargiamidis,Neophytos Neophytou###
(160076, 160076)
 In order todetermine the tradeoff between the degradation of the lattice thermalconductivity and of the power factor due to this, we perform a theoreticalinvestigation of both phonon and electron transport in nanocrystalline,nanoporous Si geometries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160316, 160317)
Lattice thermal transport in group II-alloyed PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 2.0, 'when', 1]

PbTe
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160321, 160322)
Lattice thermal transport in group II-alloyed PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2.0, 'when', 1]

PbTe
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160325, 160326)
 PbTe, one of the most promising thermoelectric materials, has recentlydemonstrated thermoelectric figure of merit (ZT) of above 2.0 when alloyedwith group II elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2.0, 'when', 0]

II
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160376, 160377)
 PbTe, one of the most promising thermoelectric materials, has recentlydemonstrated thermoelectric figure of merit (ZT) of above 2.0 when alloyedwith group II elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2.0, 'when', 0]

In
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160467, 160467)
In this work, we apply the newly-developed density-functional-theory(DFT)-based compressive sensing lattice dynamics (CSLD) approach to modellattice heat transport in PbTe, M<missing VAR>Te, and Pb0.94M<missing VAR>0.06Te (M<missing VAR>Mg, Ca, Srand Ba), compare our results with experimental measurements, with focus onstrain effect and mass disorder scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2.0, 'when', 3]

CS
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160508, 160509)
In this work, we apply the newly-developed density-functional-theory(DFT)-based compressive sensing lattice dynamics (CSLD) approach to modellattice heat transport in PbTe, M<missing VAR>Te, and Pb0.94M<missing VAR>0.06Te (M<missing VAR>Mg, Ca, Srand Ba), compare our results with experimental measurements, with focus onstrain effect and mass disorder scattering.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2.0, 'when', 3]

PbTe
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160529, 160530)
In this work, we apply the newly-developed density-functional-theory(DFT)-based compressive sensing lattice dynamics (CSLD) approach to modellattice heat transport in PbTe, M<missing VAR>Te, and Pb0.94M<missing VAR>0.06Te (M<missing VAR>Mg, Ca, Srand Ba), compare our results with experimental measurements, with focus onstrain effect and mass disorder scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2.0, 'when', 3]

Te
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160534, 160534)
In this work, we apply the newly-developed density-functional-theory(DFT)-based compressive sensing lattice dynamics (CSLD) approach to modellattice heat transport in PbTe, M<missing VAR>Te, and Pb0.94M<missing VAR>0.06Te (M<missing VAR>Mg, Ca, Srand Ba), compare our results with experimental measurements, with focus onstrain effect and mass disorder scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2.0, 'when', 3]

Pb0.94
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160539, 160540)
In this work, we apply the newly-developed density-functional-theory(DFT)-based compressive sensing lattice dynamics (CSLD) approach to modellattice heat transport in PbTe, M<missing VAR>Te, and Pb0.94M<missing VAR>0.06Te (M<missing VAR>Mg, Ca, Srand Ba), compare our results with experimental measurements, with focus onstrain effect and mass disorder scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2.0, 'when', 3]

Te
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160543, 160543)
In this work, we apply the newly-developed density-functional-theory(DFT)-based compressive sensing lattice dynamics (CSLD) approach to modellattice heat transport in PbTe, M<missing VAR>Te, and Pb0.94M<missing VAR>0.06Te (M<missing VAR>Mg, Ca, Srand Ba), compare our results with experimental measurements, with focus onstrain effect and mass disorder scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 2.0, 'when', 3]

Mg
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160547, 160547)
In this work, we apply the newly-developed density-functional-theory(DFT)-based compressive sensing lattice dynamics (CSLD) approach to modellattice heat transport in PbTe, M<missing VAR>Te, and Pb0.94M<missing VAR>0.06Te (M<missing VAR>Mg, Ca, Srand Ba), compare our results with experimental measurements, with focus onstrain effect and mass disorder scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 2.0, 'when', 3]

Ca
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160550, 160550)
In this work, we apply the newly-developed density-functional-theory(DFT)-based compressive sensing lattice dynamics (CSLD) approach to modellattice heat transport in PbTe, M<missing VAR>Te, and Pb0.94M<missing VAR>0.06Te (M<missing VAR>Mg, Ca, Srand Ba), compare our results with experimental measurements, with focus onstrain effect and mass disorder scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 2.0, 'when', 3]

Sr
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160553, 160553)
In this work, we apply the newly-developed density-functional-theory(DFT)-based compressive sensing lattice dynamics (CSLD) approach to modellattice heat transport in PbTe, M<missing VAR>Te, and Pb0.94M<missing VAR>0.06Te (M<missing VAR>Mg, Ca, Srand Ba), compare our results with experimental measurements, with focus onstrain effect and mass disorder scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 2.0, 'when', 3]

Ba
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160558, 160558)
In this work, we apply the newly-developed density-functional-theory(DFT)-based compressive sensing lattice dynamics (CSLD) approach to modellattice heat transport in PbTe, M<missing VAR>Te, and Pb0.94M<missing VAR>0.06Te (M<missing VAR>Mg, Ca, Srand Ba), compare our results with experimental measurements, with focus onstrain effect and mass disorder scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 2.0, 'when', 3]

CaTe
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160605, 160606)
 We find that (1) CaTe, SrTe andBaTe in the rock-salt structure exhibit much higher kappal<missing VAR> than PbTe,while MgTe in the same structure shows anomalously low kappal<missing VAR>; (2)lattice heat transport of PbTe is extremely sensitive to static strain inducedby alloying atoms in solid solution form; (3) mass disorder scattering plays amajor role in reducing kappal<missing VAR> for Mg/Ca/Sr-alloyed PbTe through stronglysuppressing the lifetimes of intermediate- and high-frequency phonons, whilefor Ba-alloyed PbTe, precipitated nanoparticles are also important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 2.0, 'when', 4]

SrTe
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160609, 160610)
 We find that (1) CaTe, SrTe andBaTe in the rock-salt structure exhibit much higher kappal<missing VAR> than PbTe,while MgTe in the same structure shows anomalously low kappal<missing VAR>; (2)lattice heat transport of PbTe is extremely sensitive to static strain inducedby alloying atoms in solid solution form; (3) mass disorder scattering plays amajor role in reducing kappal<missing VAR> for Mg/Ca/Sr-alloyed PbTe through stronglysuppressing the lifetimes of intermediate- and high-frequency phonons, whilefor Ba-alloyed PbTe, precipitated nanoparticles are also important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 2.0, 'when', 4]

BaTe
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160615, 160616)
 We find that (1) CaTe, SrTe andBaTe in the rock-salt structure exhibit much higher kappal<missing VAR> than PbTe,while MgTe in the same structure shows anomalously low kappal<missing VAR>; (2)lattice heat transport of PbTe is extremely sensitive to static strain inducedby alloying atoms in solid solution form; (3) mass disorder scattering plays amajor role in reducing kappal<missing VAR> for Mg/Ca/Sr-alloyed PbTe through stronglysuppressing the lifetimes of intermediate- and high-frequency phonons, whilefor Ba-alloyed PbTe, precipitated nanoparticles are also important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2.0, 'when', 4]

PbTe
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160639, 160640)
 We find that (1) CaTe, SrTe andBaTe in the rock-salt structure exhibit much higher kappal<missing VAR> than PbTe,while MgTe in the same structure shows anomalously low kappal<missing VAR>; (2)lattice heat transport of PbTe is extremely sensitive to static strain inducedby alloying atoms in solid solution form; (3) mass disorder scattering plays amajor role in reducing kappal<missing VAR> for Mg/Ca/Sr-alloyed PbTe through stronglysuppressing the lifetimes of intermediate- and high-frequency phonons, whilefor Ba-alloyed PbTe, precipitated nanoparticles are also important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 2.0, 'when', 4]

MgTe
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160646, 160647)
 We find that (1) CaTe, SrTe andBaTe in the rock-salt structure exhibit much higher kappal<missing VAR> than PbTe,while MgTe in the same structure shows anomalously low kappal<missing VAR>; (2)lattice heat transport of PbTe is extremely sensitive to static strain inducedby alloying atoms in solid solution form; (3) mass disorder scattering plays amajor role in reducing kappal<missing VAR> for Mg/Ca/Sr-alloyed PbTe through stronglysuppressing the lifetimes of intermediate- and high-frequency phonons, whilefor Ba-alloyed PbTe, precipitated nanoparticles are also important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 2.0, 'when', 4]

PbTe
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160680, 160681)
 We find that (1) CaTe, SrTe andBaTe in the rock-salt structure exhibit much higher kappal<missing VAR> than PbTe,while MgTe in the same structure shows anomalously low kappal<missing VAR>; (2)lattice heat transport of PbTe is extremely sensitive to static strain inducedby alloying atoms in solid solution form; (3) mass disorder scattering plays amajor role in reducing kappal<missing VAR> for Mg/Ca/Sr-alloyed PbTe through stronglysuppressing the lifetimes of intermediate- and high-frequency phonons, whilefor Ba-alloyed PbTe, precipitated nanoparticles are also important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 2.0, 'when', 4]

Mg/Ca/Sr
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160741, 160745)
 We find that (1) CaTe, SrTe andBaTe in the rock-salt structure exhibit much higher kappal<missing VAR> than PbTe,while MgTe in the same structure shows anomalously low kappal<missing VAR>; (2)lattice heat transport of PbTe is extremely sensitive to static strain inducedby alloying atoms in solid solution form; (3) mass disorder scattering plays amajor role in reducing kappal<missing VAR> for Mg/Ca/Sr-alloyed PbTe through stronglysuppressing the lifetimes of intermediate- and high-frequency phonons, whilefor Ba-alloyed PbTe, precipitated nanoparticles are also important.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[374.0, 2.0, 'when', 4]

PbTe
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160749, 160750)
 We find that (1) CaTe, SrTe andBaTe in the rock-salt structure exhibit much higher kappal<missing VAR> than PbTe,while MgTe in the same structure shows anomalously low kappal<missing VAR>; (2)lattice heat transport of PbTe is extremely sensitive to static strain inducedby alloying atoms in solid solution form; (3) mass disorder scattering plays amajor role in reducing kappal<missing VAR> for Mg/Ca/Sr-alloyed PbTe through stronglysuppressing the lifetimes of intermediate- and high-frequency phonons, whilefor Ba-alloyed PbTe, precipitated nanoparticles are also important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 2.0, 'when', 4]

Ba
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160782, 160782)
 We find that (1) CaTe, SrTe andBaTe in the rock-salt structure exhibit much higher kappal<missing VAR> than PbTe,while MgTe in the same structure shows anomalously low kappal<missing VAR>; (2)lattice heat transport of PbTe is extremely sensitive to static strain inducedby alloying atoms in solid solution form; (3) mass disorder scattering plays amajor role in reducing kappal<missing VAR> for Mg/Ca/Sr-alloyed PbTe through stronglysuppressing the lifetimes of intermediate- and high-frequency phonons, whilefor Ba-alloyed PbTe, precipitated nanoparticles are also important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[415.0, 2.0, 'when', 4]

PbTe
###Lattice thermal transport in group II-alloyed PbTe|Yi Xia,James M. Hodges,Mercouri G. Kanatzidis,Maria K. Y. Chan###
(160786, 160787)
 We find that (1) CaTe, SrTe andBaTe in the rock-salt structure exhibit much higher kappal<missing VAR> than PbTe,while MgTe in the same structure shows anomalously low kappal<missing VAR>; (2)lattice heat transport of PbTe is extremely sensitive to static strain inducedby alloying atoms in solid solution form; (3) mass disorder scattering plays amajor role in reducing kappal<missing VAR> for Mg/Ca/Sr-alloyed PbTe through stronglysuppressing the lifetimes of intermediate- and high-frequency phonons, whilefor Ba-alloyed PbTe, precipitated nanoparticles are also important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[419.0, 2.0, 'when', 4]

TiNBr
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(160825, 160827)
First-principles study of the layered thermoelectric material TiNBr.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 300, 'K', 3],[238.0, 0.661, 'at', 4],[239.0, 800, 'K', 4],[260.0, 1.34, 'W', 4]

TiNBr
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(160940, 160942)
 We report TiNBr,as a member of the layer-structured metal nitride halide system MNX (M<missing VAR>  Ti,Zr, Hf; X<missing VAR>  Cl, Br, I), and it exhibits an ultrahigh Seebeck coefficient of2215 mu V/K at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 300, 'K', 0],[123.0, 0.661, 'at', 1],[124.0, 800, 'K', 1],[145.0, 1.34, 'W', 1]

Ti
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(160976, 160976)
 We report TiNBr,as a member of the layer-structured metal nitride halide system MNX (M<missing VAR>  Ti,Zr, Hf; X<missing VAR>  Cl, Br, I), and it exhibits an ultrahigh Seebeck coefficient of2215 mu V/K at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 300, 'K', 0],[89.0, 0.661, 'at', 1],[90.0, 800, 'K', 1],[111.0, 1.34, 'W', 1]

Zr
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(160980, 160980)
 We report TiNBr,as a member of the layer-structured metal nitride halide system MNX (M<missing VAR>  Ti,Zr, Hf; X<missing VAR>  Cl, Br, I), and it exhibits an ultrahigh Seebeck coefficient of2215 mu V/K at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 300, 'K', 0],[85.0, 0.661, 'at', 1],[86.0, 800, 'K', 1],[107.0, 1.34, 'W', 1]

Hf
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(160983, 160983)
 We report TiNBr,as a member of the layer-structured metal nitride halide system MNX (M<missing VAR>  Ti,Zr, Hf; X<missing VAR>  Cl, Br, I), and it exhibits an ultrahigh Seebeck coefficient of2215 mu V/K at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 300, 'K', 0],[82.0, 0.661, 'at', 1],[83.0, 800, 'K', 1],[104.0, 1.34, 'W', 1]

Cl
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(160989, 160989)
 We report TiNBr,as a member of the layer-structured metal nitride halide system MNX (M<missing VAR>  Ti,Zr, Hf; X<missing VAR>  Cl, Br, I), and it exhibits an ultrahigh Seebeck coefficient of2215 mu V/K at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 300, 'K', 0],[76.0, 0.661, 'at', 1],[77.0, 800, 'K', 1],[98.0, 1.34, 'W', 1]

Br
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(160992, 160992)
 We report TiNBr,as a member of the layer-structured metal nitride halide system MNX (M<missing VAR>  Ti,Zr, Hf; X<missing VAR>  Cl, Br, I), and it exhibits an ultrahigh Seebeck coefficient of2215 mu V/K at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 300, 'K', 0],[73.0, 0.661, 'at', 1],[74.0, 800, 'K', 1],[95.0, 1.34, 'W', 1]

I
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(160995, 160995)
 We report TiNBr,as a member of the layer-structured metal nitride halide system MNX (M<missing VAR>  Ti,Zr, Hf; X<missing VAR>  Cl, Br, I), and it exhibits an ultrahigh Seebeck coefficient of2215 mu V/K at 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 300, 'K', 0],[70.0, 0.661, 'at', 1],[71.0, 800, 'K', 1],[92.0, 1.34, 'W', 1]

V/K
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(161020, 161022)
 We report TiNBr,as a member of the layer-structured metal nitride halide system MNX (M<missing VAR>  Ti,Zr, Hf; X<missing VAR>  Cl, Br, I), and it exhibits an ultrahigh Seebeck coefficient of2215 mu V/K at 300K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[3.0, 300, 'K', 0],[43.0, 0.661, 'at', 1],[44.0, 800, 'K', 1],[65.0, 1.34, 'W', 1]

K
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(161092, 161092)
 The value of the dimensionless figure of merit, ZT,along A axis can be as high as 0.661 at 800K, corresponding to a latticethermal conductivity as low as 1.34 W/(m<missing VAR> K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 300, 'K', 1],[27.0, 0.661, 'at', 0],[26.0, 800, 'K', 0],[5.0, 1.34, 'W', 0]

TiNBr
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(161105, 161107)
 The low kappal<missing VAR> of TiNBr isassociated with a collectively low phonon group velocity (2.05times 103 m/s on average) and large phonon anharmonicity that can be quantified using theGruneisen parameter and three-phonon processes.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 300, 'K', 2],[40.0, 0.661, 'at', 1],[39.0, 800, 'K', 1],[18.0, 1.34, 'W', 1]

N
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(161210, 161210)
 Animation of the atomicmotion in highly anharmonic modes mainly involves the motion of N atoms, andthe charge density difference reveals that the N atoms become polarized withthe merging of anharmonicity.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 300, 'K', 3],[145.0, 0.661, 'at', 2],[144.0, 800, 'K', 2],[123.0, 1.34, 'W', 2]

N
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(161232, 161232)
 Animation of the atomicmotion in highly anharmonic modes mainly involves the motion of N atoms, andthe charge density difference reveals that the N atoms become polarized withthe merging of anharmonicity.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 300, 'K', 3],[167.0, 0.661, 'at', 2],[166.0, 800, 'K', 2],[145.0, 1.34, 'W', 2]

TiNBr
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(161319, 161321)
 Moreover, the fitting procedure of theenergy-displacement curve verifies that in addition to the three-phononprocesses, the fourth-order anharmonic effect is also important in the integralanharmonicity of TiNBr.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 300, 'K', 4],[254.0, 0.661, 'at', 3],[253.0, 800, 'K', 3],[232.0, 1.34, 'W', 3]

TiNBr
###First-principles study of the layered thermoelectric material TiNBr|Shuofeng Zhang,Ben Xu,Yuanhua Lin,Cewen Nan,Wei Liu###
(161347, 161349)
 Our work is the first study of the thermoelectricproperties of TiNBr and may help establish a connection between the low latticethermal conductivity and the behavior of phonon vibrational modes.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 300, 'K', 5],[282.0, 0.661, 'at', 4],[281.0, 800, 'K', 4],[260.0, 1.34, 'W', 4]

P
###Thermoelectric phonon glass electron crystal via ion beam patterning of silicon|Taishan Zhu,Krishnan Swaminathan-Gopalan,Kelly Stephani,Elif Ertekin###
(161501, 161501)
 We show in this work that patterned defectiveregions generated by ion beam irradiation of silicon can create a phonon glasselectron crystal (PGEC), a longstanding goal of thermoelectrics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Thermoelectric phonon glass electron crystal via ion beam patterning of silicon|Taishan Zhu,Krishnan Swaminathan-Gopalan,Kelly Stephani,Elif Ertekin###
(161504, 161504)
 We show in this work that patterned defectiveregions generated by ion beam irradiation of silicon can create a phonon glasselectron crystal (PGEC), a longstanding goal of thermoelectrics.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Thermoelectric phonon glass electron crystal via ion beam patterning of silicon|Taishan Zhu,Krishnan Swaminathan-Gopalan,Kelly Stephani,Elif Ertekin###
(161753, 161753)
These findings indicate that nanostructuring of patterned defective regions incrystalline materials is a viable approach to realize a PGEC, and ion beamirradiation could be a promising fabrication strategy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Thermoelectric phonon glass electron crystal via ion beam patterning of silicon|Taishan Zhu,Krishnan Swaminathan-Gopalan,Kelly Stephani,Elif Ertekin###
(161756, 161756)
These findings indicate that nanostructuring of patterned defective regions incrystalline materials is a viable approach to realize a PGEC, and ion beamirradiation could be a promising fabrication strategy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Analytic treatment of the thermoelectric properties for two coupled quantum dots threaded by magnetic fields|Guido Menichetti,Giuseppe Grosso,Giuseppe Pastori Parravicini###
(162098, 162098)
 We havefound that the thermopower S can be enhanced by more than ten times and thefigure of merit ZT by more than hundred times by the presence of a threadingmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0, 's', 1]

B
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162255, 162255)
 Unlike in conventional semiconductors, both the chemical potential and theband gap in bilayer graphene (BLG) can be tuned via application of externalelectric field.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[374.0, 300, ',', 4]

B
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162298, 162298)
 Among numerous device implications, this property alsodesignates BLG as a candidate for high-performance thermoelectric material.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 300, ',', 3]

In
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162319, 162319)
 Inthis theoretical study we have calculated the Seebeck coefficients for abruptinterface separating weakly- and heavily-doped areas in BLG, and for a morerealistic rectangular sample of mesoscopic size, contacted by two electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 300, ',', 2]

B
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162362, 162362)
 Inthis theoretical study we have calculated the Seebeck coefficients for abruptinterface separating weakly- and heavily-doped areas in BLG, and for a morerealistic rectangular sample of mesoscopic size, contacted by two electrodes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 300, ',', 2]

S
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162444, 162444)
For a given band gap (Delta) and temperature (T) the maximal Seebeckcoefficient is close to the Goldsmid-Sharp value Srm maxrmG<missing VAR>SDelta/(2eT), the deviations can be approximated by the asymptoticexpression Srm maxrm G<missing VAR>S-Srmmax(k<missing VAR>B/e)timesleft[frac12lnu+ln2-frac12+calO(u<missing VAR>-1)right], with the electron charge -e<missing VAR>, the Boltzmann constantk<missing VAR>B, and u<missing VAR>  Delta/(2kBT)gg1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 300, ',', 1]

S
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162452, 162452)
For a given band gap (Delta) and temperature (T) the maximal Seebeckcoefficient is close to the Goldsmid-Sharp value Srm maxrmG<missing VAR>SDelta/(2eT), the deviations can be approximated by the asymptoticexpression Srm maxrm G<missing VAR>S-Srmmax(k<missing VAR>B/e)timesleft[frac12lnu+ln2-frac12+calO(u<missing VAR>-1)right], with the electron charge -e<missing VAR>, the Boltzmann constantk<missing VAR>B, and u<missing VAR>  Delta/(2kBT)gg1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 300, ',', 1]

S
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162481, 162481)
For a given band gap (Delta) and temperature (T) the maximal Seebeckcoefficient is close to the Goldsmid-Sharp value Srm maxrmG<missing VAR>SDelta/(2eT), the deviations can be approximated by the asymptoticexpression Srm maxrm G<missing VAR>S-Srmmax(k<missing VAR>B/e)timesleft[frac12lnu+ln2-frac12+calO(u<missing VAR>-1)right], with the electron charge -e<missing VAR>, the Boltzmann constantk<missing VAR>B, and u<missing VAR>  Delta/(2kBT)gg1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 300, ',', 1]

S
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162488, 162488)
For a given band gap (Delta) and temperature (T) the maximal Seebeckcoefficient is close to the Goldsmid-Sharp value Srm maxrmG<missing VAR>SDelta/(2eT), the deviations can be approximated by the asymptoticexpression Srm maxrm G<missing VAR>S-Srmmax(k<missing VAR>B/e)timesleft[frac12lnu+ln2-frac12+calO(u<missing VAR>-1)right], with the electron charge -e<missing VAR>, the Boltzmann constantk<missing VAR>B, and u<missing VAR>  Delta/(2kBT)gg1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 300, ',', 1]

S
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162490, 162490)
For a given band gap (Delta) and temperature (T) the maximal Seebeckcoefficient is close to the Goldsmid-Sharp value Srm maxrmG<missing VAR>SDelta/(2eT), the deviations can be approximated by the asymptoticexpression Srm maxrm G<missing VAR>S-Srmmax(k<missing VAR>B/e)timesleft[frac12lnu+ln2-frac12+calO(u<missing VAR>-1)right], with the electron charge -e<missing VAR>, the Boltzmann constantk<missing VAR>B, and u<missing VAR>  Delta/(2kBT)gg1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 300, ',', 1]

B
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162497, 162497)
For a given band gap (Delta) and temperature (T) the maximal Seebeckcoefficient is close to the Goldsmid-Sharp value Srm maxrmG<missing VAR>SDelta/(2eT), the deviations can be approximated by the asymptoticexpression Srm maxrm G<missing VAR>S-Srmmax(k<missing VAR>B/e)timesleft[frac12lnu+ln2-frac12+calO(u<missing VAR>-1)right], with the electron charge -e<missing VAR>, the Boltzmann constantk<missing VAR>B, and u<missing VAR>  Delta/(2kBT)gg1.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 300, ',', 1]

O
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162520, 162520)
For a given band gap (Delta) and temperature (T) the maximal Seebeckcoefficient is close to the Goldsmid-Sharp value Srm maxrmG<missing VAR>SDelta/(2eT), the deviations can be approximated by the asymptoticexpression Srm maxrm G<missing VAR>S-Srmmax(k<missing VAR>B/e)timesleft[frac12lnu+ln2-frac12+calO(u<missing VAR>-1)right], with the electron charge -e<missing VAR>, the Boltzmann constantk<missing VAR>B, and u<missing VAR>  Delta/(2kBT)gg1.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 300, ',', 1]

B
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162550, 162550)
For a given band gap (Delta) and temperature (T) the maximal Seebeckcoefficient is close to the Goldsmid-Sharp value Srm maxrmG<missing VAR>SDelta/(2eT), the deviations can be approximated by the asymptoticexpression Srm maxrm G<missing VAR>S-Srmmax(k<missing VAR>B/e)timesleft[frac12lnu+ln2-frac12+calO(u<missing VAR>-1)right], with the electron charge -e<missing VAR>, the Boltzmann constantk<missing VAR>B, and u<missing VAR>  Delta/(2kBT)gg1.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 300, ',', 1]

B
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162590, 162590)
 Surprisingly, the effects of trigonalwarping term in the BLG low-energy Hamiltonian are clearly visible atfew-Kelvin temperatures, for all accessible values ofDeltaleqslant300,meV.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 300, ',', 0]

V
###Thermoelectric properties of gapped bilayer graphene|Dominik Suszalski,Grzegorz Rut,Adam Rycerz###
(162632, 162632)
 Surprisingly, the effects of trigonalwarping term in the BLG low-energy Hamiltonian are clearly visible atfew-Kelvin temperatures, for all accessible values ofDeltaleqslant300,meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 300, ',', 0]

As
###Designing graphene/hexagonal boron nitride superlattice monolayer with high thermoelectric performance|Zizhen Zhou,Huijun Liu,Dengdong Fan,Guohua Cao###
(163024, 163024)
 As a consequence, thethermoelectric performance of p<missing VAR>-type system can be enhanced to be comparablewith that of n<missing VAR>-type one by appropriate substitution of nitrogen atom withphosphorus, which can suppress the lattice thermal conductivity but nearly haveno influence on the hole transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1100, 'K', 2]

N2
###High Performance Ternary Alkali Nitrides for Renewable Energy Applications|Jiban Kangsabanik,Aftab Alam###
(163202, 163203)
 Here, we report a previously unexplored class ofnitrides AM<missing VAR>N2 keeping renewable energy applications in mind.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsVN2
###High Performance Ternary Alkali Nitrides for Renewable Energy Applications|Jiban Kangsabanik,Aftab Alam###
(163414, 163417)
 This in turn yieldshigh short circuit current and hence excellent solar efficiency for fewcompounds namely CsVN2 and RbVN2.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RbVN2
###High Performance Ternary Alkali Nitrides for Renewable Energy Applications|Jiban Kangsabanik,Aftab Alam###
(163421, 163424)
 This in turn yieldshigh short circuit current and hence excellent solar efficiency for fewcompounds namely CsVN2 and RbVN2.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Photo-Induced Ultrafast Symmetry Switch in SnSe|Yadong Han,Junhong Yu,Hang Zhang,Fang Xu,Kunlin Peng,Xiaoyuan Zhou,Liang Qiao,Oleg V. Misochko,Kazutaka G. Nakamura,Giovanni M. Vanacore,Jianbo Hu###
(163731, 163732)
Photo-Induced Ultrafast Symmetry Switch in SnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SnSe)
###Photo-Induced Ultrafast Symmetry Switch in SnSe|Yadong Han,Junhong Yu,Hang Zhang,Fang Xu,Kunlin Peng,Xiaoyuan Zhou,Liang Qiao,Oleg V. Misochko,Kazutaka G. Nakamura,Giovanni M. Vanacore,Jianbo Hu###
(163741, 163744)
 Layered tin selenide (SnSe) has recently emerged as a high-performancethermoelectric material with the current record for the figure of merit (ZT)observed in the high-temperature Cmcm phase.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Photo-Induced Ultrafast Symmetry Switch in SnSe|Yadong Han,Junhong Yu,Hang Zhang,Fang Xu,Kunlin Peng,Xiaoyuan Zhou,Liang Qiao,Oleg V. Misochko,Kazutaka G. Nakamura,Giovanni M. Vanacore,Jianbo Hu###
(163900, 163901)
 Here, we investigate theultrafast carrier and phononic dynamics in SnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Photo-Induced Ultrafast Symmetry Switch in SnSe|Yadong Han,Junhong Yu,Hang Zhang,Fang Xu,Kunlin Peng,Xiaoyuan Zhou,Liang Qiao,Oleg V. Misochko,Kazutaka G. Nakamura,Giovanni M. Vanacore,Jianbo Hu###
(164018, 164018)
 Thisnon-equilibrium Cmcm phase is found to be driven by the displacive excitationof coherent Ag phonons and, given the absence of low-energy thermal phonons,exists in SnSe with the status of cold lattice with hot carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Photo-Induced Ultrafast Symmetry Switch in SnSe|Yadong Han,Junhong Yu,Hang Zhang,Fang Xu,Kunlin Peng,Xiaoyuan Zhou,Liang Qiao,Oleg V. Misochko,Kazutaka G. Nakamura,Giovanni M. Vanacore,Jianbo Hu###
(164047, 164048)
 Thisnon-equilibrium Cmcm phase is found to be driven by the displacive excitationof coherent Ag phonons and, given the absence of low-energy thermal phonons,exists in SnSe with the status of cold lattice with hot carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Photo-Induced Ultrafast Symmetry Switch in SnSe|Yadong Han,Junhong Yu,Hang Zhang,Fang Xu,Kunlin Peng,Xiaoyuan Zhou,Liang Qiao,Oleg V. Misochko,Kazutaka G. Nakamura,Giovanni M. Vanacore,Jianbo Hu###
(164095, 164096)
 Ourfindings provide important insight for understanding non-equilibriumthermoelectric properties of SnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrIrSb
###Optical phonon modes assisted thermal conductivity in p-type ZrIrSb Half-Heusler alloy: A combined experimental and computational study|Kavita Yadav,Saurabh Singh,Tsunehiro Takeuchi,K. Mukherjee###
(164125, 164127)
Optical phonon modes assisted thermal conductivity in p<missing VAR>-type ZrIrSb Half-Heusler alloy A combined experimental and computational study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 18, 'valence', 1]

(HH)
###Optical phonon modes assisted thermal conductivity in p-type ZrIrSb Half-Heusler alloy: A combined experimental and computational study|Kavita Yadav,Saurabh Singh,Tsunehiro Takeuchi,K. Mukherjee###
(164152, 164155)
 Half Heusler (HH) alloys with 18 valence electron count have attractedsignificant interest in the area of research related to thermoelectrics.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 18, 'valence', 0]

HH
###Optical phonon modes assisted thermal conductivity in p-type ZrIrSb Half-Heusler alloy: A combined experimental and computational study|Kavita Yadav,Saurabh Singh,Tsunehiro Takeuchi,K. Mukherjee###
(164254, 164255)
 Largethermal conductivity shown by most of the HH alloy possesses a major hurdle inimproving the figure of merit (ZT).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 18, 'valence', 2]

HH
###Optical phonon modes assisted thermal conductivity in p-type ZrIrSb Half-Heusler alloy: A combined experimental and computational study|Kavita Yadav,Saurabh Singh,Tsunehiro Takeuchi,K. Mukherjee###
(164308, 164309)
 Additionally, understanding the mechanismof thermal conduction in heavy constituents HH alloys is an interesting aspect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 18, 'valence', 3]

ZrIrSb
###Optical phonon modes assisted thermal conductivity in p-type ZrIrSb Half-Heusler alloy: A combined experimental and computational study|Kavita Yadav,Saurabh Singh,Tsunehiro Takeuchi,K. Mukherjee###
(164345, 164347)
Here, we have investigated the high temperature thermoelectric properties ofZrIrSb through experimental studies, phonon dispersion and electronic bandstructure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 18, 'valence', 4]

ZrIrSb
###Optical phonon modes assisted thermal conductivity in p-type ZrIrSb Half-Heusler alloy: A combined experimental and computational study|Kavita Yadav,Saurabh Singh,Tsunehiro Takeuchi,K. Mukherjee###
(164372, 164374)
 ZrIrSb is found to exhibit substantially lowermagnitude of resistivity and Seebeck coefficient near room temperature, owingto existence of anti-site disorder between Ir/Sb and vacant sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 18, 'valence', 5]

Ir/Sb
###Optical phonon modes assisted thermal conductivity in p-type ZrIrSb Half-Heusler alloy: A combined experimental and computational study|Kavita Yadav,Saurabh Singh,Tsunehiro Takeuchi,K. Mukherjee###
(164425, 164427)
 ZrIrSb is found to exhibit substantially lowermagnitude of resistivity and Seebeck coefficient near room temperature, owingto existence of anti-site disorder between Ir/Sb and vacant sites.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[265.0, 18, 'valence', 5]

ZrIrSb
###Optical phonon modes assisted thermal conductivity in p-type ZrIrSb Half-Heusler alloy: A combined experimental and computational study|Kavita Yadav,Saurabh Singh,Tsunehiro Takeuchi,K. Mukherjee###
(164442, 164444)
Interestingly, in ZrIrSb, lattice thermal conductivity is governed by couplingbetween the acoustic and low frequency optical phonon modes, which originatesdue to heavier Ir/Sb atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 18, 'valence', 6]

Ir/Sb
###Optical phonon modes assisted thermal conductivity in p-type ZrIrSb Half-Heusler alloy: A combined experimental and computational study|Kavita Yadav,Saurabh Singh,Tsunehiro Takeuchi,K. Mukherjee###
(164492, 164494)
Interestingly, in ZrIrSb, lattice thermal conductivity is governed by couplingbetween the acoustic and low frequency optical phonon modes, which originatesdue to heavier Ir/Sb atoms.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[332.0, 18, 'valence', 6]

Ag2Se
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(164641, 164643)
Temperature induced first order electronic topological transition in -Ag2Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 35, 'K', 3],[227.0, 300, 'K', 5],[240.0, 300, 'K', 5],[276.0, 0.4, 'eV', 6],[286.0, 300, 'K', 6],[311.0, 15, 'K', 6]

Ag2Se
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(164648, 164650)
 beta-Ag2Se is a promising material for room temperature thermoelectricapplications and magneto-resistive sensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 35, 'K', 2],[220.0, 300, 'K', 4],[233.0, 300, 'K', 4],[269.0, 0.4, 'eV', 5],[279.0, 300, 'K', 5],[304.0, 15, 'K', 5]

H
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(164779, 164779)
 Here, we show that a broad hysteresis above 35 K is observed notonly in rho(T), but also in other electronic properties such as Hallcoefficient (R<missing VAR>H(T)), Seebeck coefficient, thermal conductivity andultraviolet photoelectron spectra (UPS).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 35, 'K', 0],[91.0, 300, 'K', 2],[104.0, 300, 'K', 2],[140.0, 0.4, 'eV', 3],[150.0, 300, 'K', 3],[175.0, 15, 'K', 3]

(UPS)
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(164804, 164808)
 Here, we show that a broad hysteresis above 35 K is observed notonly in rho(T), but also in other electronic properties such as Hallcoefficient (R<missing VAR>H(T)), Seebeck coefficient, thermal conductivity andultraviolet photoelectron spectra (UPS).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[67.0, 35, 'K', 0],[62.0, 300, 'K', 2],[75.0, 300, 'K', 2],[111.0, 0.4, 'eV', 3],[121.0, 300, 'K', 3],[146.0, 15, 'K', 3]

H
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(164849, 164849)
 The rho(T) and R<missing VAR>H(T)show that beta-Ag2Se is semiconducting above 300 K, but metallicity isretained below 300 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 35, 'K', 2],[21.0, 300, 'K', 0],[34.0, 300, 'K', 0],[70.0, 0.4, 'eV', 1],[80.0, 300, 'K', 1],[105.0, 15, 'K', 1]

Ag2Se
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(164861, 164863)
 The rho(T) and R<missing VAR>H(T)show that beta-Ag2Se is semiconducting above 300 K, but metallicity isretained below 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 35, 'K', 2],[7.0, 300, 'K', 0],[20.0, 300, 'K', 0],[56.0, 0.4, 'eV', 1],[66.0, 300, 'K', 1],[91.0, 15, 'K', 1]

F
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(164915, 164915)
 While electronic states are absent in the energy rangefrom the Fermi level (E<missing VAR>F) to 0.4 eV below the E<missing VAR>F at 300 K, a distinctFermi edge is observed in the UPS at 15 K suggesting that the beta-Ag2Seundergoes an electronic topological transition from a high temperaturesemiconducting state to a low temperature metallic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 35, 'K', 3],[45.0, 300, 'K', 1],[32.0, 300, 'K', 1],[4.0, 0.4, 'eV', 0],[14.0, 300, 'K', 0],[39.0, 15, 'K', 0]

F
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(164926, 164926)
 While electronic states are absent in the energy rangefrom the Fermi level (E<missing VAR>F) to 0.4 eV below the E<missing VAR>F at 300 K, a distinctFermi edge is observed in the UPS at 15 K suggesting that the beta-Ag2Seundergoes an electronic topological transition from a high temperaturesemiconducting state to a low temperature metallic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 35, 'K', 3],[56.0, 300, 'K', 1],[43.0, 300, 'K', 1],[7.0, 0.4, 'eV', 0],[3.0, 300, 'K', 0],[28.0, 15, 'K', 0]

UPS
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(164949, 164951)
 While electronic states are absent in the energy rangefrom the Fermi level (E<missing VAR>F) to 0.4 eV below the E<missing VAR>F at 300 K, a distinctFermi edge is observed in the UPS at 15 K suggesting that the beta-Ag2Seundergoes an electronic topological transition from a high temperaturesemiconducting state to a low temperature metallic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[212.0, 35, 'K', 3],[79.0, 300, 'K', 1],[66.0, 300, 'K', 1],[30.0, 0.4, 'eV', 0],[20.0, 300, 'K', 0],[3.0, 15, 'K', 0]

Ag2Se
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(164964, 164966)
 While electronic states are absent in the energy rangefrom the Fermi level (E<missing VAR>F) to 0.4 eV below the E<missing VAR>F at 300 K, a distinctFermi edge is observed in the UPS at 15 K suggesting that the beta-Ag2Seundergoes an electronic topological transition from a high temperaturesemiconducting state to a low temperature metallic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 35, 'K', 3],[94.0, 300, 'K', 1],[81.0, 300, 'K', 1],[45.0, 0.4, 'eV', 0],[35.0, 300, 'K', 0],[10.0, 15, 'K', 0]

K
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(165048, 165048)
 Our study revealsthat a constant and moderately high thermoelectric figure of merit (ZT) inthe range 300-395 K is observed due to the broad semiconductor to metaltransition in beta-Ag2Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 35, 'K', 4],[178.0, 300, 'K', 2],[165.0, 300, 'K', 2],[129.0, 0.4, 'eV', 1],[119.0, 300, 'K', 1],[94.0, 15, 'K', 1]

Ag2Se
###Temperature induced first order electronic topological transition in $β$-Ag$_2$Se|L. S. Sharath Chandra,SK. Ramjan,Soma Banik,Archna Sagdeo,M. K. Chattopadhyay###
(165075, 165077)
 Our study revealsthat a constant and moderately high thermoelectric figure of merit (ZT) inthe range 300-395 K is observed due to the broad semiconductor to metaltransition in beta-Ag2Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 35, 'K', 4],[205.0, 300, 'K', 2],[192.0, 300, 'K', 2],[156.0, 0.4, 'eV', 1],[146.0, 300, 'K', 1],[121.0, 15, 'K', 1]

Zn4Sb3
###Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation|Peter Skjøtt Thorup,Christian Moeslund Zeuthen,Kasper Borup,Bo Brummerstedt Iversen###
(165100, 165103)
Improving the operational stability of thermoelectric Zn4Sb3 by segmentation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn4Sb3
###Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation|Peter Skjøtt Thorup,Christian Moeslund Zeuthen,Kasper Borup,Bo Brummerstedt Iversen###
(165122, 165125)
 The mixed ionic-electronic conductor beta-Zn4Sb3 is a cheap and highperforming thermoelectric material, but under operating conditions with atemperature gradient and a running current, the material decomposes as Znreadily migrates in the structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation|Peter Skjøtt Thorup,Christian Moeslund Zeuthen,Kasper Borup,Bo Brummerstedt Iversen###
(165179, 165179)
 The mixed ionic-electronic conductor beta-Zn4Sb3 is a cheap and highperforming thermoelectric material, but under operating conditions with atemperature gradient and a running current, the material decomposes as Znreadily migrates in the structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn4Sb3
###Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation|Peter Skjøtt Thorup,Christian Moeslund Zeuthen,Kasper Borup,Bo Brummerstedt Iversen###
(165211, 165214)
 Here, we report an improved stability ofbeta-Zn4Sb3 by introducing ion-blocking interfaces of stainless steelto segment the sample, produced by a rapid one-step Spark Plasma Sinteringsynthesis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation|Peter Skjøtt Thorup,Christian Moeslund Zeuthen,Kasper Borup,Bo Brummerstedt Iversen###
(165341, 165341)
 The segmented samples arestable under temperature gradient from 250degC to room temperature with noexternal current, whereas the unsegmented sample decomposes into ZnSb and Znunder the same conditions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnSb
###Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation|Peter Skjøtt Thorup,Christian Moeslund Zeuthen,Kasper Borup,Bo Brummerstedt Iversen###
(165371, 165372)
 The segmented samples arestable under temperature gradient from 250degC to room temperature with noexternal current, whereas the unsegmented sample decomposes into ZnSb and Znunder the same conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation|Peter Skjøtt Thorup,Christian Moeslund Zeuthen,Kasper Borup,Bo Brummerstedt Iversen###
(165376, 165376)
 The segmented samples arestable under temperature gradient from 250degC to room temperature with noexternal current, whereas the unsegmented sample decomposes into ZnSb and Znunder the same conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation|Peter Skjøtt Thorup,Christian Moeslund Zeuthen,Kasper Borup,Bo Brummerstedt Iversen###
(165435, 165435)
 In conclusion, a rapid one-step synthesis of segmentedbeta-Zn4Sb3 is developed, which successfully improves the long-termoperational stability by blocking the Zn ion migration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn4Sb3
###Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation|Peter Skjøtt Thorup,Christian Moeslund Zeuthen,Kasper Borup,Bo Brummerstedt Iversen###
(165457, 165460)
 In conclusion, a rapid one-step synthesis of segmentedbeta-Zn4Sb3 is developed, which successfully improves the long-termoperational stability by blocking the Zn ion migration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation|Peter Skjøtt Thorup,Christian Moeslund Zeuthen,Kasper Borup,Bo Brummerstedt Iversen###
(165490, 165490)
 In conclusion, a rapid one-step synthesis of segmentedbeta-Zn4Sb3 is developed, which successfully improves the long-termoperational stability by blocking the Zn ion migration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrCoY
###First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (Y=Sb, Bi )|Lynet Allan,Winfred M. Mulwa,Robinson J. Musembi,Bernard O. Aduda###
(165542, 165544)
First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (YSb, Bi ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSb
###First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (Y=Sb, Bi )|Lynet Allan,Winfred M. Mulwa,Robinson J. Musembi,Bernard O. Aduda###
(165547, 165548)
First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (YSb, Bi ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (Y=Sb, Bi )|Lynet Allan,Winfred M. Mulwa,Robinson J. Musembi,Bernard O. Aduda###
(165551, 165551)
First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (YSb, Bi ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(HH)
###First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (Y=Sb, Bi )|Lynet Allan,Winfred M. Mulwa,Robinson J. Musembi,Bernard O. Aduda###
(165584, 165587)
 Half heusler (HH) alloys, which are potential thermoelectric materialshave demonstrated significant improvements in thermoelectric performance owingto their thermal stability, mechanical strength, and moderate ZT.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrCoY
###First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (Y=Sb, Bi )|Lynet Allan,Winfred M. Mulwa,Robinson J. Musembi,Bernard O. Aduda###
(165688, 165690)
 Using DensityFunctional Theory (DFT), the structural, mechanical, electronic, and latticedynamical properties of cubic Half Heusler alloys ZrCoY (YSb, Bi) have beeninvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSb
###First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (Y=Sb, Bi )|Lynet Allan,Winfred M. Mulwa,Robinson J. Musembi,Bernard O. Aduda###
(165693, 165694)
 Using DensityFunctional Theory (DFT), the structural, mechanical, electronic, and latticedynamical properties of cubic Half Heusler alloys ZrCoY (YSb, Bi) have beeninvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (Y=Sb, Bi )|Lynet Allan,Winfred M. Mulwa,Robinson J. Musembi,Bernard O. Aduda###
(165697, 165697)
 Using DensityFunctional Theory (DFT), the structural, mechanical, electronic, and latticedynamical properties of cubic Half Heusler alloys ZrCoY (YSb, Bi) have beeninvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (Y=Sb, Bi )|Lynet Allan,Winfred M. Mulwa,Robinson J. Musembi,Bernard O. Aduda###
(165829, 165829)
 Mechanical propertiessuch as anisotropy factor A, shear modulus G<missing VAR>, bulk modulus B, Youngs modulus E<missing VAR>,and Poisons ratio n<missing VAR>, are calculated using the Voigt-Reuss-Hill average approachbased on elastic constants.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PB
###First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (Y=Sb, Bi )|Lynet Allan,Winfred M. Mulwa,Robinson J. Musembi,Bernard O. Aduda###
(165918, 165919)
 The Debyes temperature, as well as longitudinal andtransverse sound velocities, are predicted from elastic constants at GGA-PBE<missing VAR>and G<missing VAR>W approximations.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###First Principles Study of the Structural, Mechanical, Electronic, and Lattice Dynamical Properties of the Half-Heusler Alloys ZrCoY (Y=Sb, Bi )|Lynet Allan,Winfred M. Mulwa,Robinson J. Musembi,Bernard O. Aduda###
(165926, 165926)
 The Debyes temperature, as well as longitudinal andtransverse sound velocities, are predicted from elastic constants at GGA-PBE<missing VAR>and G<missing VAR>W approximations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbP
###High thermoelectric performances in PbP monolayers considering full electron-phonon coupling and four-phonon scattering processes|Ao Wu,Yiming Zhang,Yujie Xia,Lei Peng,Heyuan Zhu,Hezhu Shao,Hao Zhang###
(166037, 166038)
High thermoelectric performances in PbP monolayers considering full electron-phonon coupling and four-phonon scattering processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 0.9, ',', 7],[407.0, 0.24, 'and', 7],[408.0, 1.25, 'for', 7]

In
###High thermoelectric performances in PbP monolayers considering full electron-phonon coupling and four-phonon scattering processes|Ao Wu,Yiming Zhang,Yujie Xia,Lei Peng,Heyuan Zhu,Hezhu Shao,Hao Zhang###
(166152, 166152)
 In this work,TE properties for alpha-, beta- and gamma-PbP are intestigated underthe consideration of full mode-, energy- and momentum-resolved electron-phononinteractions (E<missing VAR>PI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 0.9, ',', 4],[293.0, 0.24, 'and', 4],[294.0, 1.25, 'for', 4]

PbP
###High thermoelectric performances in PbP monolayers considering full electron-phonon coupling and four-phonon scattering processes|Ao Wu,Yiming Zhang,Yujie Xia,Lei Peng,Heyuan Zhu,Hezhu Shao,Hao Zhang###
(166178, 166179)
 In this work,TE properties for alpha-, beta- and gamma-PbP are intestigated underthe consideration of full mode-, energy- and momentum-resolved electron-phononinteractions (E<missing VAR>PI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 0.9, ',', 4],[266.0, 0.24, 'and', 4],[267.0, 1.25, 'for', 4]

I
###High thermoelectric performances in PbP monolayers considering full electron-phonon coupling and four-phonon scattering processes|Ao Wu,Yiming Zhang,Yujie Xia,Lei Peng,Heyuan Zhu,Hezhu Shao,Hao Zhang###
(166219, 166219)
 In this work,TE properties for alpha-, beta- and gamma-PbP are intestigated underthe consideration of full mode-, energy- and momentum-resolved electron-phononinteractions (E<missing VAR>PI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 0.9, ',', 4],[226.0, 0.24, 'and', 4],[227.0, 1.25, 'for', 4]

PI
###High thermoelectric performances in PbP monolayers considering full electron-phonon coupling and four-phonon scattering processes|Ao Wu,Yiming Zhang,Yujie Xia,Lei Peng,Heyuan Zhu,Hezhu Shao,Hao Zhang###
(166247, 166248)
 The group theory is used to analyze the selection rules forE<missing VAR>PI matrix elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 0.9, ',', 3],[197.0, 0.24, 'and', 3],[198.0, 1.25, 'for', 3]

In
###High thermoelectric performances in PbP monolayers considering full electron-phonon coupling and four-phonon scattering processes|Ao Wu,Yiming Zhang,Yujie Xia,Lei Peng,Heyuan Zhu,Hezhu Shao,Hao Zhang###
(166312, 166312)
 In addition,the investigation on the thermal properties reveals that four-phonon scatteringeffect dominates the phonon relaxation processes, since the three-phononscattering is suppressed due to the significantly large acoustic-optical phononbandgap in alpha-, beta- and gamma-PbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 0.9, ',', 1],[133.0, 0.24, 'and', 1],[134.0, 1.25, 'for', 1]

PbP
###High thermoelectric performances in PbP monolayers considering full electron-phonon coupling and four-phonon scattering processes|Ao Wu,Yiming Zhang,Yujie Xia,Lei Peng,Heyuan Zhu,Hezhu Shao,Hao Zhang###
(166401, 166402)
 In addition,the investigation on the thermal properties reveals that four-phonon scatteringeffect dominates the phonon relaxation processes, since the three-phononscattering is suppressed due to the significantly large acoustic-optical phononbandgap in alpha-, beta- and gamma-PbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0.9, ',', 1],[43.0, 0.24, 'and', 1],[44.0, 1.25, 'for', 1]

PI
###High thermoelectric performances in PbP monolayers considering full electron-phonon coupling and four-phonon scattering processes|Ao Wu,Yiming Zhang,Yujie Xia,Lei Peng,Heyuan Zhu,Hezhu Shao,Hao Zhang###
(166412, 166413)
 By considering full E<missing VAR>PI effectand high-order phonon scattering processes, the calculated ZT values reach0.90, 0.24 and 1.25 for alpha-, beta- and gamma-PbP, repectively,indicating their promising applications in thermoelectric devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0.9, ',', 0],[32.0, 0.24, 'and', 0],[33.0, 1.25, 'for', 0]

PbP
###High thermoelectric performances in PbP monolayers considering full electron-phonon coupling and four-phonon scattering processes|Ao Wu,Yiming Zhang,Yujie Xia,Lei Peng,Heyuan Zhu,Hezhu Shao,Hao Zhang###
(166459, 166460)
 By considering full E<missing VAR>PI effectand high-order phonon scattering processes, the calculated ZT values reach0.90, 0.24 and 1.25 for alpha-, beta- and gamma-PbP, repectively,indicating their promising applications in thermoelectric devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.9, ',', 0],[14.0, 0.24, 'and', 0],[13.0, 1.25, 'for', 0]

Cs2BI6
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166498, 166502)
Vacancy-Ordered Double Perovskites Cs2BI6 (B  Pt, Pd, Te, Sn) An Emerging Class of Thermoelectric Materials.
Featurization terminated normally.
0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[538.0, 0.88, ',', 11],[541.0, 0.85, ',', 11],[543.0, 0.95, 'and', 11],[545.0, 0.78, ',', 11]

B
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166505, 166505)
Vacancy-Ordered Double Perovskites Cs2BI6 (B  Pt, Pd, Te, Sn) An Emerging Class of Thermoelectric Materials.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[535.0, 0.88, ',', 11],[538.0, 0.85, ',', 11],[540.0, 0.95, 'and', 11],[542.0, 0.78, ',', 11]

Pt
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166508, 166508)
Vacancy-Ordered Double Perovskites Cs2BI6 (B  Pt, Pd, Te, Sn) An Emerging Class of Thermoelectric Materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[532.0, 0.88, ',', 11],[535.0, 0.85, ',', 11],[537.0, 0.95, 'and', 11],[539.0, 0.78, ',', 11]

Pd
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166511, 166511)
Vacancy-Ordered Double Perovskites Cs2BI6 (B  Pt, Pd, Te, Sn) An Emerging Class of Thermoelectric Materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[529.0, 0.88, ',', 11],[532.0, 0.85, ',', 11],[534.0, 0.95, 'and', 11],[536.0, 0.78, ',', 11]

Te
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166514, 166514)
Vacancy-Ordered Double Perovskites Cs2BI6 (B  Pt, Pd, Te, Sn) An Emerging Class of Thermoelectric Materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[526.0, 0.88, ',', 11],[529.0, 0.85, ',', 11],[531.0, 0.95, 'and', 11],[533.0, 0.78, ',', 11]

Sn
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166517, 166517)
Vacancy-Ordered Double Perovskites Cs2BI6 (B  Pt, Pd, Te, Sn) An Emerging Class of Thermoelectric Materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[523.0, 0.88, ',', 11],[526.0, 0.85, ',', 11],[528.0, 0.95, 'and', 11],[530.0, 0.78, ',', 11]

B
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166544, 166544)
 Vacancy-ordered double perovskites (A2BX<missing VAR>6), being one of theenvironmentally friendly and stable alternatives to lead halide perovskites,have garnered considerable research attention in the scientific community.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[496.0, 0.88, ',', 10],[499.0, 0.85, ',', 10],[501.0, 0.95, 'and', 10],[503.0, 0.78, ',', 10]

Cs2BI6
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166635, 166639)
 Here, we explore Cs2BI6 (B  Pt, Pd, Te, Sn) aspotential thermoelectric materials using the state-of-the-art first-principlesbased methodologies, viz.
Featurization terminated normally.
0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[401.0, 0.88, ',', 8],[404.0, 0.85, ',', 8],[406.0, 0.95, 'and', 8],[408.0, 0.78, ',', 8]

B
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166642, 166642)
 Here, we explore Cs2BI6 (B  Pt, Pd, Te, Sn) aspotential thermoelectric materials using the state-of-the-art first-principlesbased methodologies, viz.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 0.88, ',', 8],[401.0, 0.85, ',', 8],[403.0, 0.95, 'and', 8],[405.0, 0.78, ',', 8]

Pt
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166645, 166645)
 Here, we explore Cs2BI6 (B  Pt, Pd, Te, Sn) aspotential thermoelectric materials using the state-of-the-art first-principlesbased methodologies, viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 0.88, ',', 8],[398.0, 0.85, ',', 8],[400.0, 0.95, 'and', 8],[402.0, 0.78, ',', 8]

Pd
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166648, 166648)
 Here, we explore Cs2BI6 (B  Pt, Pd, Te, Sn) aspotential thermoelectric materials using the state-of-the-art first-principlesbased methodologies, viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[392.0, 0.88, ',', 8],[395.0, 0.85, ',', 8],[397.0, 0.95, 'and', 8],[399.0, 0.78, ',', 8]

Te
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166651, 166651)
 Here, we explore Cs2BI6 (B  Pt, Pd, Te, Sn) aspotential thermoelectric materials using the state-of-the-art first-principlesbased methodologies, viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 0.88, ',', 8],[392.0, 0.85, ',', 8],[394.0, 0.95, 'and', 8],[396.0, 0.78, ',', 8]

Sn
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166654, 166654)
 Here, we explore Cs2BI6 (B  Pt, Pd, Te, Sn) aspotential thermoelectric materials using the state-of-the-art first-principlesbased methodologies, viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 0.88, ',', 8],[389.0, 0.85, ',', 8],[391.0, 0.95, 'and', 8],[393.0, 0.78, ',', 8]

W0
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166714, 166715)
, density functional theory combined with many-bodyperturbation theory (G<missing VAR>0W0) and spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 0.88, ',', 7],[328.0, 0.85, ',', 7],[330.0, 0.95, 'and', 7],[332.0, 0.78, ',', 7]

Fr
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166853, 166853)
 The presence of anharmonic latticedynamics leads to strong electron-phonon coupling, which is well captured byFro<missing VAR>hlich mesoscopic model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 0.88, ',', 4],[190.0, 0.85, ',', 4],[192.0, 0.95, 'and', 4],[194.0, 0.78, ',', 4]

Cs2PtI6
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166950, 166954)
 The maximumanharmonicity is observed in Cs2PtI6, followed by Cs2PdI6,Cs2TeI6 and Cs2SnI6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0.88, ',', 1],[89.0, 0.85, ',', 1],[91.0, 0.95, 'and', 1],[93.0, 0.78, ',', 1]

Cs2PdI6
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166961, 166965)
 The maximumanharmonicity is observed in Cs2PtI6, followed by Cs2PdI6,Cs2TeI6 and Cs2SnI6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0.88, ',', 1],[78.0, 0.85, ',', 1],[80.0, 0.95, 'and', 1],[82.0, 0.78, ',', 1]

Cs2TeI6
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166969, 166973)
 The maximumanharmonicity is observed in Cs2PtI6, followed by Cs2PdI6,Cs2TeI6 and Cs2SnI6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.88, ',', 1],[70.0, 0.85, ',', 1],[72.0, 0.95, 'and', 1],[74.0, 0.78, ',', 1]

Cs2SnI6
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(166977, 166981)
 The maximumanharmonicity is observed in Cs2PtI6, followed by Cs2PdI6,Cs2TeI6 and Cs2SnI6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.88, ',', 1],[62.0, 0.85, ',', 1],[64.0, 0.95, 'and', 1],[66.0, 0.78, ',', 1]

Cs2PtI6
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(167009, 167013)
 Also, the computed average thermoelectricfigure of merit (zT) for Cs2PtI6, Cs2PdI6, Cs2TeI6 andCs2SnI6 are 0.88, 0.85, 0.95 and 0.78, respectively, which reveals theirpromising renewable energy applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.88, ',', 0],[30.0, 0.85, ',', 0],[32.0, 0.95, 'and', 0],[34.0, 0.78, ',', 0]

Cs2PdI6
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(167016, 167020)
 Also, the computed average thermoelectricfigure of merit (zT) for Cs2PtI6, Cs2PdI6, Cs2TeI6 andCs2SnI6 are 0.88, 0.85, 0.95 and 0.78, respectively, which reveals theirpromising renewable energy applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.88, ',', 0],[23.0, 0.85, ',', 0],[25.0, 0.95, 'and', 0],[27.0, 0.78, ',', 0]

Cs2TeI6
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(167023, 167027)
 Also, the computed average thermoelectricfigure of merit (zT) for Cs2PtI6, Cs2PdI6, Cs2TeI6 andCs2SnI6 are 0.88, 0.85, 0.95 and 0.78, respectively, which reveals theirpromising renewable energy applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.88, ',', 0],[16.0, 0.85, ',', 0],[18.0, 0.95, 'and', 0],[20.0, 0.78, ',', 0]

Cs2SnI6
###Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials|Preeti Bhumla,Manjari Jain,Sajjan Sheoran,Saswata Bhattacharya###
(167032, 167036)
 Also, the computed average thermoelectricfigure of merit (zT) for Cs2PtI6, Cs2PdI6, Cs2TeI6 andCs2SnI6 are 0.88, 0.85, 0.95 and 0.78, respectively, which reveals theirpromising renewable energy applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.88, ',', 0],[7.0, 0.85, ',', 0],[9.0, 0.95, 'and', 0],[11.0, 0.78, ',', 0]

In
###Inorganic Tin Perovskites with Tunable Conductivity Enabled by Organic Modifiers|Md Azimul Haque,Tong Zhu,Luis Huerta Hernandez,Roba Tounesi,Craig Combe,Bambar Davaasuren,Abdul-Hamid Emwas,F. Pelayo García de Arquer,Edward H. Sargent,Derya Baran###
(167138, 167138)
 Inmetal-halide perovskites, which offer convenient manufacturing traits andtunability for certain optoelectronic applications, this is challenging Theperovskite structure itself, poses fundamental limits to maximum dopantincorporation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 2.7, 'decades', 2],[220.0, 200, 'S', 2],[286.0, 0.21, ',', 3]

(CsSnI3)
###Inorganic Tin Perovskites with Tunable Conductivity Enabled by Organic Modifiers|Md Azimul Haque,Tong Zhu,Luis Huerta Hernandez,Roba Tounesi,Craig Combe,Bambar Davaasuren,Abdul-Hamid Emwas,F. Pelayo García de Arquer,Edward H. Sargent,Derya Baran###
(167305, 167310)
 By incorporating organicsmall molecules and conjugated polymers into cesium tin iodide (CsSnI3)perovskites, we achieve carrier density tunability over 2.7 decades, transitionfrom a semiconducting to a metallic nature, and high electrical conductivityexceeding 200 S/cm.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2.7, 'decades', 0],[48.0, 200, 'S', 0],[114.0, 0.21, ',', 1]

(BPN)
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167545, 167549)
 The first-principles calculations predict a stable biphenylene carbon network(BPN) like the Boron-nitride structure named inorganic biphenylene network(I-BPN).
Featurization successful!
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 10, 'th', 4],[232.0, 1.88, 'eV', 5],[316.0, 0.00292, 'V', 6],[321.0, 324, 'K', 6],[394.0, 0.0056, 'W', 8],[448.0, 1.0, 'The', 9]

I
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167571, 167571)
 The first-principles calculations predict a stable biphenylene carbon network(BPN) like the Boron-nitride structure named inorganic biphenylene network(I-BPN).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 10, 'th', 4],[210.0, 1.88, 'eV', 5],[294.0, 0.00292, 'V', 6],[299.0, 324, 'K', 6],[372.0, 0.0056, 'W', 8],[426.0, 1.0, 'The', 9]

N
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167575, 167575)
 The first-principles calculations predict a stable biphenylene carbon network(BPN) like the Boron-nitride structure named inorganic biphenylene network(I-BPN).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 10, 'th', 4],[206.0, 1.88, 'eV', 5],[290.0, 0.00292, 'V', 6],[295.0, 324, 'K', 6],[368.0, 0.0056, 'W', 8],[422.0, 1.0, 'The', 9]

BPN
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167591, 167593)
 A comparison has been done between BPN and I-BPN to examine thestability of the I-BPN monolayer.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 10, 'th', 3],[188.0, 1.88, 'eV', 4],[272.0, 0.00292, 'V', 5],[277.0, 324, 'K', 5],[350.0, 0.0056, 'W', 7],[404.0, 1.0, 'The', 8]

I
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167597, 167597)
 A comparison has been done between BPN and I-BPN to examine thestability of the I-BPN monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 10, 'th', 3],[184.0, 1.88, 'eV', 4],[268.0, 0.00292, 'V', 5],[273.0, 324, 'K', 5],[346.0, 0.0056, 'W', 7],[400.0, 1.0, 'The', 8]

BPN
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167599, 167601)
 A comparison has been done between BPN and I-BPN to examine thestability of the I-BPN monolayer.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 10, 'th', 3],[180.0, 1.88, 'eV', 4],[264.0, 0.00292, 'V', 5],[269.0, 324, 'K', 5],[342.0, 0.0056, 'W', 7],[396.0, 1.0, 'The', 8]

I
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167616, 167616)
 A comparison has been done between BPN and I-BPN to examine thestability of the I-BPN monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 10, 'th', 3],[165.0, 1.88, 'eV', 4],[249.0, 0.00292, 'V', 5],[254.0, 324, 'K', 5],[327.0, 0.0056, 'W', 7],[381.0, 1.0, 'The', 8]

BPN
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167618, 167620)
 A comparison has been done between BPN and I-BPN to examine thestability of the I-BPN monolayer.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 10, 'th', 3],[161.0, 1.88, 'eV', 4],[245.0, 0.00292, 'V', 5],[250.0, 324, 'K', 5],[323.0, 0.0056, 'W', 7],[377.0, 1.0, 'The', 8]

I
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167681, 167681)
 It has been found that the stability of I-BPN iscomparable with the BPN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 10, 'th', 1],[100.0, 1.88, 'eV', 2],[184.0, 0.00292, 'V', 3],[189.0, 324, 'K', 3],[262.0, 0.0056, 'W', 5],[316.0, 1.0, 'The', 6]

BPN
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167683, 167685)
 It has been found that the stability of I-BPN iscomparable with the BPN.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 10, 'th', 1],[96.0, 1.88, 'eV', 2],[180.0, 0.00292, 'V', 3],[185.0, 324, 'K', 3],[258.0, 0.0056, 'W', 5],[312.0, 1.0, 'The', 6]

BPN
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167696, 167698)
 It has been found that the stability of I-BPN iscomparable with the BPN.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 10, 'th', 1],[83.0, 1.88, 'eV', 2],[167.0, 0.00292, 'V', 3],[172.0, 324, 'K', 3],[245.0, 0.0056, 'W', 5],[299.0, 1.0, 'The', 6]

I
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167724, 167724)
 The lattice transport properties reveal that thephonon thermal conductivity of I-BPN is 10th order low than the BPN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 10, 'th', 0],[57.0, 1.88, 'eV', 1],[141.0, 0.00292, 'V', 2],[146.0, 324, 'K', 2],[219.0, 0.0056, 'W', 4],[273.0, 1.0, 'The', 5]

BPN
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167726, 167728)
 The lattice transport properties reveal that thephonon thermal conductivity of I-BPN is 10th order low than the BPN.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 10, 'th', 0],[53.0, 1.88, 'eV', 1],[137.0, 0.00292, 'V', 2],[142.0, 324, 'K', 2],[215.0, 0.0056, 'W', 4],[269.0, 1.0, 'The', 5]

BPN
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167741, 167743)
 The lattice transport properties reveal that thephonon thermal conductivity of I-BPN is 10th order low than the BPN.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 10, 'th', 0],[38.0, 1.88, 'eV', 1],[122.0, 0.00292, 'V', 2],[127.0, 324, 'K', 2],[200.0, 0.0056, 'W', 4],[254.0, 1.0, 'The', 5]

I
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167759, 167759)
 Theelectronic band structure reveals that I-BPN is a semiconductor with anindirect bandgap of 1.88 eV with valence band maximum (VBM) at Y and conductionband maximum (CBM) at the X<missing VAR> high symmetry point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 10, 'th', 1],[22.0, 1.88, 'eV', 0],[106.0, 0.00292, 'V', 1],[111.0, 324, 'K', 1],[184.0, 0.0056, 'W', 3],[238.0, 1.0, 'The', 4]

BPN
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167761, 167763)
 Theelectronic band structure reveals that I-BPN is a semiconductor with anindirect bandgap of 1.88 eV with valence band maximum (VBM) at Y and conductionband maximum (CBM) at the X<missing VAR> high symmetry point.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 10, 'th', 1],[18.0, 1.88, 'eV', 0],[102.0, 0.00292, 'V', 1],[107.0, 324, 'K', 1],[180.0, 0.0056, 'W', 3],[234.0, 1.0, 'The', 4]

VB
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167792, 167793)
 Theelectronic band structure reveals that I-BPN is a semiconductor with anindirect bandgap of 1.88 eV with valence band maximum (VBM) at Y and conductionband maximum (CBM) at the X<missing VAR> high symmetry point.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 10, 'th', 1],[11.0, 1.88, 'eV', 0],[72.0, 0.00292, 'V', 1],[77.0, 324, 'K', 1],[150.0, 0.0056, 'W', 3],[204.0, 1.0, 'The', 4]

Y
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167799, 167799)
 Theelectronic band structure reveals that I-BPN is a semiconductor with anindirect bandgap of 1.88 eV with valence band maximum (VBM) at Y and conductionband maximum (CBM) at the X<missing VAR> high symmetry point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 10, 'th', 1],[18.0, 1.88, 'eV', 0],[66.0, 0.00292, 'V', 1],[71.0, 324, 'K', 1],[144.0, 0.0056, 'W', 3],[198.0, 1.0, 'The', 4]

CB
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167811, 167812)
 Theelectronic band structure reveals that I-BPN is a semiconductor with anindirect bandgap of 1.88 eV with valence band maximum (VBM) at Y and conductionband maximum (CBM) at the X<missing VAR> high symmetry point.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 10, 'th', 1],[30.0, 1.88, 'eV', 0],[53.0, 0.00292, 'V', 1],[58.0, 324, 'K', 1],[131.0, 0.0056, 'W', 3],[185.0, 1.0, 'The', 4]

In
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167829, 167829)
 In addition, thethermoelectric parameters, such as the seebeck coefficient, show the highestpeak value of 0.00292 V/K at 324K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 10, 'th', 2],[48.0, 1.88, 'eV', 1],[36.0, 0.00292, 'V', 0],[41.0, 324, 'K', 0],[114.0, 0.0056, 'W', 2],[168.0, 1.0, 'The', 3]

K
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167867, 167867)
 In addition, thethermoelectric parameters, such as the seebeck coefficient, show the highestpeak value of 0.00292 V/K at 324K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 10, 'th', 2],[86.0, 1.88, 'eV', 1],[2.0, 0.00292, 'V', 0],[3.0, 324, 'K', 0],[76.0, 0.0056, 'W', 2],[130.0, 1.0, 'The', 3]

I
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167884, 167884)
 Electronic transport properties reveal thatI-BPN is highly anisotropic along the x<missing VAR> and y<missing VAR>-axes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 10, 'th', 3],[103.0, 1.88, 'eV', 2],[19.0, 0.00292, 'V', 1],[14.0, 324, 'K', 1],[59.0, 0.0056, 'W', 1],[113.0, 1.0, 'The', 2]

BPN
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167886, 167888)
 Electronic transport properties reveal thatI-BPN is highly anisotropic along the x<missing VAR> and y<missing VAR>-axes.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 10, 'th', 3],[105.0, 1.88, 'eV', 2],[21.0, 0.00292, 'V', 1],[16.0, 324, 'K', 1],[55.0, 0.0056, 'W', 1],[109.0, 1.0, 'The', 2]

K2
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167946, 167947)
 Furthermore, thethermoelectric power factor as a function of chemical potential shows a peakvalue of 0.0056 W/m<missing VAR>K2 (900K) along the x<missing VAR>-axis in the p<missing VAR>-type doping region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 10, 'th', 4],[165.0, 1.88, 'eV', 3],[81.0, 0.00292, 'V', 2],[76.0, 324, 'K', 2],[3.0, 0.0056, 'W', 0],[50.0, 1.0, 'The', 1]

K
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(167951, 167951)
 Furthermore, thethermoelectric power factor as a function of chemical potential shows a peakvalue of 0.0056 W/m<missing VAR>K2 (900K) along the x<missing VAR>-axis in the p<missing VAR>-type doping region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 10, 'th', 4],[170.0, 1.88, 'eV', 3],[86.0, 0.00292, 'V', 2],[81.0, 324, 'K', 2],[8.0, 0.0056, 'W', 0],[46.0, 1.0, 'The', 1]

B
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(168093, 168093)
 It is notice that the obtain ZT peaks values are higher than any B-Ncompositions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 10, 'th', 6],[312.0, 1.88, 'eV', 5],[228.0, 0.00292, 'V', 4],[223.0, 324, 'K', 4],[150.0, 0.0056, 'W', 2],[96.0, 1.0, 'The', 1]

N
###Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride|Ajay Kumar,Parbati Senapati,Prakash parida###
(168095, 168095)
 It is notice that the obtain ZT peaks values are higher than any B-Ncompositions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 10, 'th', 6],[314.0, 1.88, 'eV', 5],[230.0, 0.00292, 'V', 4],[225.0, 324, 'K', 4],[152.0, 0.0056, 'W', 2],[98.0, 1.0, 'The', 1]

Ni3Sn2S2
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168123, 168128)
Electron and phonon transport in shandite-structured Ni3Sn2S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 100, 'and', 4],[247.0, 600, 'K', 4],[326.0, 300, 'and', 5],[484.0, 300, 'K', 7],[491.0, 10, '%', 7],[547.0, 300, 'K', 8]

Ni
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168164, 168164)
 The shandite family of solids, with hexagonal structure and compositionA3M2X2 (A  Ni,Co,Rh,Pd; M<missing VAR>  Pb,In,Sn,Tl; X<missing VAR>  S,Se), has attracted recentresearch attention due to promising applications as thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 100, 'and', 3],[211.0, 600, 'K', 3],[290.0, 300, 'and', 4],[448.0, 300, 'K', 6],[455.0, 10, '%', 6],[511.0, 300, 'K', 7]

Co
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168166, 168166)
 The shandite family of solids, with hexagonal structure and compositionA3M2X2 (A  Ni,Co,Rh,Pd; M<missing VAR>  Pb,In,Sn,Tl; X<missing VAR>  S,Se), has attracted recentresearch attention due to promising applications as thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 100, 'and', 3],[209.0, 600, 'K', 3],[288.0, 300, 'and', 4],[446.0, 300, 'K', 6],[453.0, 10, '%', 6],[509.0, 300, 'K', 7]

Rh
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168168, 168168)
 The shandite family of solids, with hexagonal structure and compositionA3M2X2 (A  Ni,Co,Rh,Pd; M<missing VAR>  Pb,In,Sn,Tl; X<missing VAR>  S,Se), has attracted recentresearch attention due to promising applications as thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 100, 'and', 3],[207.0, 600, 'K', 3],[286.0, 300, 'and', 4],[444.0, 300, 'K', 6],[451.0, 10, '%', 6],[507.0, 300, 'K', 7]

Pd
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168170, 168170)
 The shandite family of solids, with hexagonal structure and compositionA3M2X2 (A  Ni,Co,Rh,Pd; M<missing VAR>  Pb,In,Sn,Tl; X<missing VAR>  S,Se), has attracted recentresearch attention due to promising applications as thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 100, 'and', 3],[205.0, 600, 'K', 3],[284.0, 300, 'and', 4],[442.0, 300, 'K', 6],[449.0, 10, '%', 6],[505.0, 300, 'K', 7]

Pb
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168176, 168176)
 The shandite family of solids, with hexagonal structure and compositionA3M2X2 (A  Ni,Co,Rh,Pd; M<missing VAR>  Pb,In,Sn,Tl; X<missing VAR>  S,Se), has attracted recentresearch attention due to promising applications as thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 100, 'and', 3],[199.0, 600, 'K', 3],[278.0, 300, 'and', 4],[436.0, 300, 'K', 6],[443.0, 10, '%', 6],[499.0, 300, 'K', 7]

In
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168178, 168178)
 The shandite family of solids, with hexagonal structure and compositionA3M2X2 (A  Ni,Co,Rh,Pd; M<missing VAR>  Pb,In,Sn,Tl; X<missing VAR>  S,Se), has attracted recentresearch attention due to promising applications as thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 100, 'and', 3],[197.0, 600, 'K', 3],[276.0, 300, 'and', 4],[434.0, 300, 'K', 6],[441.0, 10, '%', 6],[497.0, 300, 'K', 7]

Sn
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168180, 168180)
 The shandite family of solids, with hexagonal structure and compositionA3M2X2 (A  Ni,Co,Rh,Pd; M<missing VAR>  Pb,In,Sn,Tl; X<missing VAR>  S,Se), has attracted recentresearch attention due to promising applications as thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 100, 'and', 3],[195.0, 600, 'K', 3],[274.0, 300, 'and', 4],[432.0, 300, 'K', 6],[439.0, 10, '%', 6],[495.0, 300, 'K', 7]

Tl
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168182, 168182)
 The shandite family of solids, with hexagonal structure and compositionA3M2X2 (A  Ni,Co,Rh,Pd; M<missing VAR>  Pb,In,Sn,Tl; X<missing VAR>  S,Se), has attracted recentresearch attention due to promising applications as thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 100, 'and', 3],[193.0, 600, 'K', 3],[272.0, 300, 'and', 4],[430.0, 300, 'K', 6],[437.0, 10, '%', 6],[493.0, 300, 'K', 7]

S
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168188, 168188)
 The shandite family of solids, with hexagonal structure and compositionA3M2X2 (A  Ni,Co,Rh,Pd; M<missing VAR>  Pb,In,Sn,Tl; X<missing VAR>  S,Se), has attracted recentresearch attention due to promising applications as thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 100, 'and', 3],[187.0, 600, 'K', 3],[266.0, 300, 'and', 4],[424.0, 300, 'K', 6],[431.0, 10, '%', 6],[487.0, 300, 'K', 7]

Se
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168190, 168190)
 The shandite family of solids, with hexagonal structure and compositionA3M2X2 (A  Ni,Co,Rh,Pd; M<missing VAR>  Pb,In,Sn,Tl; X<missing VAR>  S,Se), has attracted recentresearch attention due to promising applications as thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 100, 'and', 3],[185.0, 600, 'K', 3],[264.0, 300, 'and', 4],[422.0, 300, 'K', 6],[429.0, 10, '%', 6],[485.0, 300, 'K', 7]

Ni3Sn2S2
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168246, 168251)
Herein we discuss the electron and phonon transport properties ofshandite-structured Ni3Sn2S2, based on a combination of density functionaltheory (DFT), Boltzmann transport theory, and experimental measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 100, 'and', 2],[124.0, 600, 'K', 2],[203.0, 300, 'and', 3],[361.0, 300, 'K', 5],[368.0, 10, '%', 5],[424.0, 300, 'K', 6]

Ni3Sn2S2
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168293, 168298)
Ni3Sn2S2 exhibits a metallic and non-magnetic groundstate with Ni0 oxidationstate and very low charge on Sn and S atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 100, 'and', 1],[77.0, 600, 'K', 1],[156.0, 300, 'and', 2],[314.0, 300, 'K', 4],[321.0, 10, '%', 4],[377.0, 300, 'K', 5]

Ni0
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168316, 168317)
Ni3Sn2S2 exhibits a metallic and non-magnetic groundstate with Ni0 oxidationstate and very low charge on Sn and S atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 100, 'and', 1],[58.0, 600, 'K', 1],[137.0, 300, 'and', 2],[295.0, 300, 'K', 4],[302.0, 10, '%', 4],[358.0, 300, 'K', 5]

Sn
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168334, 168334)
Ni3Sn2S2 exhibits a metallic and non-magnetic groundstate with Ni0 oxidationstate and very low charge on Sn and S atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 100, 'and', 1],[41.0, 600, 'K', 1],[120.0, 300, 'and', 2],[278.0, 300, 'K', 4],[285.0, 10, '%', 4],[341.0, 300, 'K', 5]

S
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168338, 168338)
Ni3Sn2S2 exhibits a metallic and non-magnetic groundstate with Ni0 oxidationstate and very low charge on Sn and S atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 100, 'and', 1],[37.0, 600, 'K', 1],[116.0, 300, 'and', 2],[274.0, 300, 'K', 4],[281.0, 10, '%', 4],[337.0, 300, 'K', 5]

K
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168459, 168459)
 From the calculation of the ratiosigma/tau between the electronic conductivity and relaxation time, andthe experimental determination of electron conductivity, we extract thevariation of the scattering rate (1/tau) with temperature between 300 and600 K, which turns out to be almost linear, thus implying that the dominantelectron scattering mechanism in this temperature range is via phonons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 100, 'and', 1],[84.0, 600, 'K', 1],[5.0, 300, 'and', 0],[153.0, 300, 'K', 2],[160.0, 10, '%', 2],[216.0, 300, 'K', 3]

K
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168607, 168607)
 Thesmall lattice contribution to the thermal conductivity is calculated from thephonon structure and third-order force constants, and is only 2Wm-1K-1 at 300 K (less than 10% of the total thermal conductivity),which is confirmed by experimental measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 100, 'and', 3],[232.0, 600, 'K', 3],[153.0, 300, 'and', 2],[5.0, 300, 'K', 0],[12.0, 10, '%', 0],[68.0, 300, 'K', 1]

Ni3Sn2S2
###Electron and phonon transport in shandite-structured Ni$_3$Sn$_2$S$_2$|Alex Aziz,Panagiotis Mangelis,Paz Vaqueiro,Anthony V. Powell,Ricardo Grau-Crespo###
(168651, 168656)
 Overall, Ni3Sn2S2 isa poor thermoelectric material (ZT0.01 at 300 K), principally due to the lowabsolute value of the Seebeck coefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 100, 'and', 4],[276.0, 600, 'K', 4],[197.0, 300, 'and', 3],[39.0, 300, 'K', 1],[32.0, 10, '%', 1],[19.0, 300, 'K', 0]

I
###Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications|Bhawna Sahni,Vikram,Jiban Kangsabanik,Aftab Alam###
(168779, 168779)
Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 121, 'out', 6],[288.0, 960, 'compounds', 6],[307.0, 31, 'compounds', 7],[316.0, 1.5, 'eV', 7],[334.0, 13, 'compounds', 7],[357.0, 0.7, 'for', 7],[408.0, 13, 'compounds', 8],[438.0, 20, '%', 8],[459.0, 21, 'compounds', 9],[539.0, 29, 'compounds', 11],[555.0, 2, 'eV', 11]

II
###Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications|Bhawna Sahni,Vikram,Jiban Kangsabanik,Aftab Alam###
(168781, 168782)
Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 121, 'out', 6],[285.0, 960, 'compounds', 6],[304.0, 31, 'compounds', 7],[313.0, 1.5, 'eV', 7],[331.0, 13, 'compounds', 7],[354.0, 0.7, 'for', 7],[405.0, 13, 'compounds', 8],[435.0, 20, '%', 8],[456.0, 21, 'compounds', 9],[536.0, 29, 'compounds', 11],[552.0, 2, 'eV', 11]

V
###Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications|Bhawna Sahni,Vikram,Jiban Kangsabanik,Aftab Alam###
(168784, 168784)
Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 121, 'out', 6],[283.0, 960, 'compounds', 6],[302.0, 31, 'compounds', 7],[311.0, 1.5, 'eV', 7],[329.0, 13, 'compounds', 7],[352.0, 0.7, 'for', 7],[403.0, 13, 'compounds', 8],[433.0, 20, '%', 8],[454.0, 21, 'compounds', 9],[534.0, 29, 'compounds', 11],[550.0, 2, 'eV', 11]

(HH)
###Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications|Bhawna Sahni,Vikram,Jiban Kangsabanik,Aftab Alam###
(168860, 168863)
 Here, eight valence-electroncount Half-Heusler(HH) alloys have been studied using reliable first principlescalculations in the search of potential candidates for renewable energyapplications like thermoelectric (TE), solar harvesting, topological insulator(T<missing VAR>I) and transparent conductor (T<missing VAR>C) applications.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 121, 'out', 4],[204.0, 960, 'compounds', 4],[223.0, 31, 'compounds', 5],[232.0, 1.5, 'eV', 5],[250.0, 13, 'compounds', 5],[273.0, 0.7, 'for', 5],[324.0, 13, 'compounds', 6],[354.0, 20, '%', 6],[375.0, 21, 'compounds', 7],[455.0, 29, 'compounds', 9],[471.0, 2, 'eV', 9]

I
###Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications|Bhawna Sahni,Vikram,Jiban Kangsabanik,Aftab Alam###
(168927, 168927)
 Here, eight valence-electroncount Half-Heusler(HH) alloys have been studied using reliable first principlescalculations in the search of potential candidates for renewable energyapplications like thermoelectric (TE), solar harvesting, topological insulator(T<missing VAR>I) and transparent conductor (T<missing VAR>C) applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 121, 'out', 4],[140.0, 960, 'compounds', 4],[159.0, 31, 'compounds', 5],[168.0, 1.5, 'eV', 5],[186.0, 13, 'compounds', 5],[209.0, 0.7, 'for', 5],[260.0, 13, 'compounds', 6],[290.0, 20, '%', 6],[311.0, 21, 'compounds', 7],[391.0, 29, 'compounds', 9],[407.0, 2, 'eV', 9]

C
###Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications|Bhawna Sahni,Vikram,Jiban Kangsabanik,Aftab Alam###
(168938, 168938)
 Here, eight valence-electroncount Half-Heusler(HH) alloys have been studied using reliable first principlescalculations in the search of potential candidates for renewable energyapplications like thermoelectric (TE), solar harvesting, topological insulator(T<missing VAR>I) and transparent conductor (T<missing VAR>C) applications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 121, 'out', 4],[129.0, 960, 'compounds', 4],[148.0, 31, 'compounds', 5],[157.0, 1.5, 'eV', 5],[175.0, 13, 'compounds', 5],[198.0, 0.7, 'for', 5],[249.0, 13, 'compounds', 6],[279.0, 20, '%', 6],[300.0, 21, 'compounds', 7],[380.0, 29, 'compounds', 9],[396.0, 2, 'eV', 9]

W0
###Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications|Bhawna Sahni,Vikram,Jiban Kangsabanik,Aftab Alam###
(169004, 169005)
 We have performed quasistaticG<missing VAR>0W0 calculation starting from HSE<missing VAR> groundstate wavefunction to predict the mostaccurate estimation of bandgap for these class of compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 121, 'out', 2],[62.0, 960, 'compounds', 2],[81.0, 31, 'compounds', 3],[90.0, 1.5, 'eV', 3],[108.0, 13, 'compounds', 3],[131.0, 0.7, 'for', 3],[182.0, 13, 'compounds', 4],[212.0, 20, '%', 4],[233.0, 21, 'compounds', 5],[313.0, 29, 'compounds', 7],[329.0, 2, 'eV', 7]

HS
###Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications|Bhawna Sahni,Vikram,Jiban Kangsabanik,Aftab Alam###
(169013, 169014)
 We have performed quasistaticG<missing VAR>0W0 calculation starting from HSE<missing VAR> groundstate wavefunction to predict the mostaccurate estimation of bandgap for these class of compounds.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 121, 'out', 2],[53.0, 960, 'compounds', 2],[72.0, 31, 'compounds', 3],[81.0, 1.5, 'eV', 3],[99.0, 13, 'compounds', 3],[122.0, 0.7, 'for', 3],[173.0, 13, 'compounds', 4],[203.0, 20, '%', 4],[224.0, 21, 'compounds', 5],[304.0, 29, 'compounds', 7],[320.0, 2, 'eV', 7]

V
###Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications|Bhawna Sahni,Vikram,Jiban Kangsabanik,Aftab Alam###
(169169, 169169)
30 compounds with band gap 1-1.8 e<missing VAR>V were studied for optoelectronic applicationout of which 13 compounds were found to show Spectroscopic Limited MaximumEfficiency (SLME) more than 20%, comparable to existing state of the artmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 121, 'out', 2],[102.0, 960, 'compounds', 2],[83.0, 31, 'compounds', 1],[74.0, 1.5, 'eV', 1],[56.0, 13, 'compounds', 1],[33.0, 0.7, 'for', 1],[18.0, 13, 'compounds', 0],[48.0, 20, '%', 0],[69.0, 21, 'compounds', 1],[149.0, 29, 'compounds', 3],[165.0, 2, 'eV', 3]

S
###Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications|Bhawna Sahni,Vikram,Jiban Kangsabanik,Aftab Alam###
(169207, 169207)
30 compounds with band gap 1-1.8 e<missing VAR>V were studied for optoelectronic applicationout of which 13 compounds were found to show Spectroscopic Limited MaximumEfficiency (SLME) more than 20%, comparable to existing state of the artmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 121, 'out', 2],[140.0, 960, 'compounds', 2],[121.0, 31, 'compounds', 1],[112.0, 1.5, 'eV', 1],[94.0, 13, 'compounds', 1],[71.0, 0.7, 'for', 1],[20.0, 13, 'compounds', 0],[10.0, 20, '%', 0],[31.0, 21, 'compounds', 1],[111.0, 29, 'compounds', 3],[127.0, 2, 'eV', 3]

CaPd3B4O12
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169445, 169451)
First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd3B4O12 (B  Ti, V) perovskite.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0.88, 'and', 3],[141.0, 0.46, 'eV', 3],[674.0, 0.8, 'at', 11],[675.0, 800, 'K', 11]

B
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169454, 169454)
First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd3B4O12 (B  Ti, V) perovskite.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.88, 'and', 3],[138.0, 0.46, 'eV', 3],[671.0, 0.8, 'at', 11],[672.0, 800, 'K', 11]

Ti
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169457, 169457)
First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd3B4O12 (B  Ti, V) perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 0.88, 'and', 3],[135.0, 0.46, 'eV', 3],[668.0, 0.8, 'at', 11],[669.0, 800, 'K', 11]

V
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169460, 169460)
First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd3B4O12 (B  Ti, V) perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 0.88, 'and', 3],[132.0, 0.46, 'eV', 3],[665.0, 0.8, 'at', 11],[666.0, 800, 'K', 11]

CaPd3Ti4O12
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169483, 169490)
 This study has explored numerous physical properties ofCaPd3Ti4O12 (CPT<missing VAR>O) and CaPd3V4O12 (CPVO) quadrupleperovskites employing the density functional theory (DFT) method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0.88, 'and', 2],[102.0, 0.46, 'eV', 2],[635.0, 0.8, 'at', 10],[636.0, 800, 'K', 10]

CP
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169493, 169494)
 This study has explored numerous physical properties ofCaPd3Ti4O12 (CPT<missing VAR>O) and CaPd3V4O12 (CPVO) quadrupleperovskites employing the density functional theory (DFT) method.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.88, 'and', 2],[98.0, 0.46, 'eV', 2],[631.0, 0.8, 'at', 10],[632.0, 800, 'K', 10]

O
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169496, 169496)
 This study has explored numerous physical properties ofCaPd3Ti4O12 (CPT<missing VAR>O) and CaPd3V4O12 (CPVO) quadrupleperovskites employing the density functional theory (DFT) method.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.88, 'and', 2],[96.0, 0.46, 'eV', 2],[629.0, 0.8, 'at', 10],[630.0, 800, 'K', 10]

CaPd3V4O12
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169501, 169507)
 This study has explored numerous physical properties ofCaPd3Ti4O12 (CPT<missing VAR>O) and CaPd3V4O12 (CPVO) quadrupleperovskites employing the density functional theory (DFT) method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0.88, 'and', 2],[85.0, 0.46, 'eV', 2],[618.0, 0.8, 'at', 10],[619.0, 800, 'K', 10]

(CPVO)
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169509, 169514)
 This study has explored numerous physical properties ofCaPd3Ti4O12 (CPT<missing VAR>O) and CaPd3V4O12 (CPVO) quadrupleperovskites employing the density functional theory (DFT) method.
Featurization successful!
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.88, 'and', 2],[78.0, 0.46, 'eV', 2],[611.0, 0.8, 'at', 10],[612.0, 800, 'K', 10]

CP
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169583, 169584)
 The band structure of CPT<missing VAR>O reveals a 0.88 and 0.46 eV directnarrow band gap while using GGA-mBJ and GGA-PBE<missing VAR> potentials, respectively, whichis an indication of its fascinating semiconducting nature.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.88, 'and', 0],[8.0, 0.46, 'eV', 0],[541.0, 0.8, 'at', 8],[542.0, 800, 'K', 8]

O
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169586, 169586)
 The band structure of CPT<missing VAR>O reveals a 0.88 and 0.46 eV directnarrow band gap while using GGA-mBJ and GGA-PBE<missing VAR> potentials, respectively, whichis an indication of its fascinating semiconducting nature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.88, 'and', 0],[6.0, 0.46, 'eV', 0],[539.0, 0.8, 'at', 8],[540.0, 800, 'K', 8]

PB
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169621, 169622)
 The band structure of CPT<missing VAR>O reveals a 0.88 and 0.46 eV directnarrow band gap while using GGA-mBJ and GGA-PBE<missing VAR> potentials, respectively, whichis an indication of its fascinating semiconducting nature.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0.88, 'and', 0],[29.0, 0.46, 'eV', 0],[503.0, 0.8, 'at', 8],[504.0, 800, 'K', 8]

Pd
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169674, 169674)
 The calculatedpartial density of states indicates the strong hybridization between Pd-4d<missing VAR> andO-2p<missing VAR> orbital electrons for CPT<missing VAR>O, whereas Pd-4d<missing VAR> and V-3d<missing VAR>-O-2p<missing VAR> for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.88, 'and', 1],[82.0, 0.46, 'eV', 1],[451.0, 0.8, 'at', 7],[452.0, 800, 'K', 7]

O
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169682, 169682)
 The calculatedpartial density of states indicates the strong hybridization between Pd-4d<missing VAR> andO-2p<missing VAR> orbital electrons for CPT<missing VAR>O, whereas Pd-4d<missing VAR> and V-3d<missing VAR>-O-2p<missing VAR> for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 0.88, 'and', 1],[90.0, 0.46, 'eV', 1],[443.0, 0.8, 'at', 7],[444.0, 800, 'K', 7]

CP
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169693, 169694)
 The calculatedpartial density of states indicates the strong hybridization between Pd-4d<missing VAR> andO-2p<missing VAR> orbital electrons for CPT<missing VAR>O, whereas Pd-4d<missing VAR> and V-3d<missing VAR>-O-2p<missing VAR> for CPVO.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 0.88, 'and', 1],[101.0, 0.46, 'eV', 1],[431.0, 0.8, 'at', 7],[432.0, 800, 'K', 7]

O
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169696, 169696)
 The calculatedpartial density of states indicates the strong hybridization between Pd-4d<missing VAR> andO-2p<missing VAR> orbital electrons for CPT<missing VAR>O, whereas Pd-4d<missing VAR> and V-3d<missing VAR>-O-2p<missing VAR> for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.88, 'and', 1],[104.0, 0.46, 'eV', 1],[429.0, 0.8, 'at', 7],[430.0, 800, 'K', 7]

Pd
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169701, 169701)
 The calculatedpartial density of states indicates the strong hybridization between Pd-4d<missing VAR> andO-2p<missing VAR> orbital electrons for CPT<missing VAR>O, whereas Pd-4d<missing VAR> and V-3d<missing VAR>-O-2p<missing VAR> for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 0.88, 'and', 1],[109.0, 0.46, 'eV', 1],[424.0, 0.8, 'at', 7],[425.0, 800, 'K', 7]

V
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169708, 169708)
 The calculatedpartial density of states indicates the strong hybridization between Pd-4d<missing VAR> andO-2p<missing VAR> orbital electrons for CPT<missing VAR>O, whereas Pd-4d<missing VAR> and V-3d<missing VAR>-O-2p<missing VAR> for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.88, 'and', 1],[116.0, 0.46, 'eV', 1],[417.0, 0.8, 'at', 7],[418.0, 800, 'K', 7]

O
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169713, 169713)
 The calculatedpartial density of states indicates the strong hybridization between Pd-4d<missing VAR> andO-2p<missing VAR> orbital electrons for CPT<missing VAR>O, whereas Pd-4d<missing VAR> and V-3d<missing VAR>-O-2p<missing VAR> for CPVO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 0.88, 'and', 1],[121.0, 0.46, 'eV', 1],[412.0, 0.8, 'at', 7],[413.0, 800, 'K', 7]

CPVO
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169720, 169723)
 The calculatedpartial density of states indicates the strong hybridization between Pd-4d<missing VAR> andO-2p<missing VAR> orbital electrons for CPT<missing VAR>O, whereas Pd-4d<missing VAR> and V-3d<missing VAR>-O-2p<missing VAR> for CPVO.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0.88, 'and', 1],[128.0, 0.46, 'eV', 1],[402.0, 0.8, 'at', 7],[403.0, 800, 'K', 7]

O
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169762, 169762)
 Thestudy of the chemical bonding nature and electronic charge distribution graphreveals the coexistence of covalent O-V/Pd bonds, ionic O-Ti/Ca bonds, as wellas metallic Ti/V-Ti/V bonding for both compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0.88, 'and', 2],[170.0, 0.46, 'eV', 2],[363.0, 0.8, 'at', 6],[364.0, 800, 'K', 6]

V/Pd
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169764, 169766)
 Thestudy of the chemical bonding nature and electronic charge distribution graphreveals the coexistence of covalent O-V/Pd bonds, ionic O-Ti/Ca bonds, as wellas metallic Ti/V-Ti/V bonding for both compounds.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[173.0, 0.88, 'and', 2],[172.0, 0.46, 'eV', 2],[359.0, 0.8, 'at', 6],[360.0, 800, 'K', 6]

O
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169773, 169773)
 Thestudy of the chemical bonding nature and electronic charge distribution graphreveals the coexistence of covalent O-V/Pd bonds, ionic O-Ti/Ca bonds, as wellas metallic Ti/V-Ti/V bonding for both compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 0.88, 'and', 2],[181.0, 0.46, 'eV', 2],[352.0, 0.8, 'at', 6],[353.0, 800, 'K', 6]

Ti/Ca
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169775, 169777)
 Thestudy of the chemical bonding nature and electronic charge distribution graphreveals the coexistence of covalent O-V/Pd bonds, ionic O-Ti/Ca bonds, as wellas metallic Ti/V-Ti/V bonding for both compounds.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[184.0, 0.88, 'and', 2],[183.0, 0.46, 'eV', 2],[348.0, 0.8, 'at', 6],[349.0, 800, 'K', 6]

Ti/V
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169791, 169793)
 Thestudy of the chemical bonding nature and electronic charge distribution graphreveals the coexistence of covalent O-V/Pd bonds, ionic O-Ti/Ca bonds, as wellas metallic Ti/V-Ti/V bonding for both compounds.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[200.0, 0.88, 'and', 2],[199.0, 0.46, 'eV', 2],[332.0, 0.8, 'at', 6],[333.0, 800, 'K', 6]

Ti/V
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169795, 169797)
 Thestudy of the chemical bonding nature and electronic charge distribution graphreveals the coexistence of covalent O-V/Pd bonds, ionic O-Ti/Ca bonds, as wellas metallic Ti/V-Ti/V bonding for both compounds.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[204.0, 0.88, 'and', 2],[203.0, 0.46, 'eV', 2],[328.0, 0.8, 'at', 6],[329.0, 800, 'K', 6]

CPVO
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169816, 169819)
 The Fermi surface of CPVOensures a kind of hole as well as electron faces simultaneously, indicating themultifarious band characteristic.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 0.88, 'and', 3],[224.0, 0.46, 'eV', 3],[306.0, 0.8, 'at', 5],[307.0, 800, 'K', 5]

CP
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169882, 169883)
 The prediction of the static real dielectricfunction (optical property) of CPT<missing VAR>O at zero energy implies its promisingdielectric nature.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 0.88, 'and', 4],[290.0, 0.46, 'eV', 4],[242.0, 0.8, 'at', 4],[243.0, 800, 'K', 4]

O
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169885, 169885)
 The prediction of the static real dielectricfunction (optical property) of CPT<missing VAR>O at zero energy implies its promisingdielectric nature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 0.88, 'and', 4],[293.0, 0.46, 'eV', 4],[240.0, 0.8, 'at', 4],[241.0, 800, 'K', 4]

CPBO
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169917, 169920)
 The photoconductivity and absorption coefficient of CPBOdisplay good qualitative compliance with the consequences of band structurecomputations.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 0.88, 'and', 5],[325.0, 0.46, 'eV', 5],[205.0, 0.8, 'at', 3],[206.0, 800, 'K', 3]

CPBO
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169966, 169969)
 The calculated thermodynamic properties manifest thethermodynamical stability for CPBO, whereas phonon dispersions of CPVO exhibitstable phonon dispersion in contrast to slightly unstable phonon dispersion ofCPT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 0.88, 'and', 6],[374.0, 0.46, 'eV', 6],[156.0, 0.8, 'at', 2],[157.0, 800, 'K', 2]

CPVO
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(169980, 169983)
 The calculated thermodynamic properties manifest thethermodynamical stability for CPBO, whereas phonon dispersions of CPVO exhibitstable phonon dispersion in contrast to slightly unstable phonon dispersion ofCPT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 0.88, 'and', 6],[388.0, 0.46, 'eV', 6],[142.0, 0.8, 'at', 2],[143.0, 800, 'K', 2]

CP
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(170011, 170012)
 The calculated thermodynamic properties manifest thethermodynamical stability for CPBO, whereas phonon dispersions of CPVO exhibitstable phonon dispersion in contrast to slightly unstable phonon dispersion ofCPT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[420.0, 0.88, 'and', 6],[419.0, 0.46, 'eV', 6],[113.0, 0.8, 'at', 2],[114.0, 800, 'K', 2]

O
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(170014, 170014)
 The calculated thermodynamic properties manifest thethermodynamical stability for CPBO, whereas phonon dispersions of CPVO exhibitstable phonon dispersion in contrast to slightly unstable phonon dispersion ofCPT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[423.0, 0.88, 'and', 6],[422.0, 0.46, 'eV', 6],[111.0, 0.8, 'at', 2],[112.0, 800, 'K', 2]

CP
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(170067, 170068)
 The studiedthermoelectric transport properties of CPT<missing VAR>O yielded the Seebeck coefficient(186 V/K), power factor (11.9 Wcm-1K-2), and figure of merit (ZT)value of about 0.8 at 800 K, indicating that this material could be a promisingcandidate for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[476.0, 0.88, 'and', 8],[475.0, 0.46, 'eV', 8],[57.0, 0.8, 'at', 0],[58.0, 800, 'K', 0]

O
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(170070, 170070)
 The studiedthermoelectric transport properties of CPT<missing VAR>O yielded the Seebeck coefficient(186 V/K), power factor (11.9 Wcm-1K-2), and figure of merit (ZT)value of about 0.8 at 800 K, indicating that this material could be a promisingcandidate for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[479.0, 0.88, 'and', 8],[478.0, 0.46, 'eV', 8],[55.0, 0.8, 'at', 0],[56.0, 800, 'K', 0]

K
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(170086, 170086)
 The studiedthermoelectric transport properties of CPT<missing VAR>O yielded the Seebeck coefficient(186 V/K), power factor (11.9 Wcm-1K-2), and figure of merit (ZT)value of about 0.8 at 800 K, indicating that this material could be a promisingcandidate for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[495.0, 0.88, 'and', 8],[494.0, 0.46, 'eV', 8],[39.0, 0.8, 'at', 0],[40.0, 800, 'K', 0]

K
###First-principles calculations to investigate structural, elastic, electronic, thermodynamic, and thermoelectric properties of CaPd$_3$B$_4$O$_{12}$ (B = Ti, V) perovskite|M. H. K. Rubel,M. A. Hossain,M. Khalid Hossain,K. M. Hossain,A. A. Khatun,M. M. Rahaman,Md. Ferdous Rahman,M. M. Hossain,J. Hossain###
(170100, 170100)
 The studiedthermoelectric transport properties of CPT<missing VAR>O yielded the Seebeck coefficient(186 V/K), power factor (11.9 Wcm-1K-2), and figure of merit (ZT)value of about 0.8 at 800 K, indicating that this material could be a promisingcandidate for thermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[509.0, 0.88, 'and', 8],[508.0, 0.46, 'eV', 8],[25.0, 0.8, 'at', 0],[26.0, 800, 'K', 0]

ZrNiSn
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170178, 170180)
Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 0.18, 'eV', 4],[339.0, -3, ',', 7],[362.0, 1200, 'K', 8],[389.0, 0.7, ',', 8],[483.0, 1200, 'K', 10],[548.0, 382, 'K', 12],[565.0, 398, 'K', 12]

In
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170195, 170195)
 In this work, we try to understand the experimental thermoelectric (TE)properties of a ZrNiSn sample with DFT and semiclassical transport calculationsusing SCAN functional.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.18, 'eV', 3],[324.0, -3, ',', 6],[347.0, 1200, 'K', 7],[374.0, 0.7, ',', 7],[468.0, 1200, 'K', 9],[533.0, 382, 'K', 11],[550.0, 398, 'K', 11]

ZrNiSn
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170228, 170230)
 In this work, we try to understand the experimental thermoelectric (TE)properties of a ZrNiSn sample with DFT and semiclassical transport calculationsusing SCAN functional.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 0.18, 'eV', 3],[289.0, -3, ',', 6],[312.0, 1200, 'K', 7],[339.0, 0.7, ',', 7],[433.0, 1200, 'K', 9],[498.0, 382, 'K', 11],[515.0, 398, 'K', 11]

SC
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170251, 170252)
 In this work, we try to understand the experimental thermoelectric (TE)properties of a ZrNiSn sample with DFT and semiclassical transport calculationsusing SCAN functional.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.18, 'eV', 3],[267.0, -3, ',', 6],[290.0, 1200, 'K', 7],[317.0, 0.7, ',', 7],[411.0, 1200, 'K', 9],[476.0, 382, 'K', 11],[493.0, 398, 'K', 11]

N
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170254, 170254)
 In this work, we try to understand the experimental thermoelectric (TE)properties of a ZrNiSn sample with DFT and semiclassical transport calculationsusing SCAN functional.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.18, 'eV', 3],[265.0, -3, ',', 6],[288.0, 1200, 'K', 7],[315.0, 0.7, ',', 7],[409.0, 1200, 'K', 9],[474.0, 382, 'K', 11],[491.0, 398, 'K', 11]

SC
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170259, 170260)
 SCAN and mBJ provide the same band gap Eg ofsim0.54 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.18, 'eV', 2],[259.0, -3, ',', 5],[282.0, 1200, 'K', 6],[309.0, 0.7, ',', 6],[403.0, 1200, 'K', 8],[468.0, 382, 'K', 10],[485.0, 398, 'K', 10]

N
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170262, 170262)
 SCAN and mBJ provide the same band gap Eg ofsim0.54 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 0.18, 'eV', 2],[257.0, -3, ',', 5],[280.0, 1200, 'K', 6],[307.0, 0.7, ',', 6],[401.0, 1200, 'K', 8],[466.0, 382, 'K', 10],[483.0, 398, 'K', 10]

V
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170290, 170290)
 SCAN and mBJ provide the same band gap Eg ofsim0.54 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.18, 'eV', 2],[229.0, -3, ',', 5],[252.0, 1200, 'K', 6],[279.0, 0.7, ',', 6],[373.0, 1200, 'K', 8],[438.0, 382, 'K', 10],[455.0, 398, 'K', 10]

S
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170335, 170335)
 The better explanation of experimental Seebeck coefficientS is done by considering Eg of 0.18 eV which suggests thenon-stoichiometry and/or disorder in the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.18, 'eV', 0],[184.0, -3, ',', 3],[207.0, 1200, 'K', 4],[234.0, 0.7, ',', 4],[328.0, 1200, 'K', 6],[393.0, 382, 'K', 8],[410.0, 398, 'K', 8]

S
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170383, 170383)
 Further improvement in the Sis done by the inclusion of temperature dependence on chemical potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.18, 'eV', 1],[136.0, -3, ',', 2],[159.0, 1200, 'K', 3],[186.0, 0.7, ',', 3],[280.0, 1200, 'K', 5],[345.0, 382, 'K', 7],[362.0, 398, 'K', 7]

In
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170409, 170409)
 Inorder to look for the possible enhanced TE properties obtainable in ZrNiSn withEg of sim0.54 e<missing VAR>V, power factor and optimal carrier concentrations arecalculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0.18, 'eV', 2],[110.0, -3, ',', 1],[133.0, 1200, 'K', 2],[160.0, 0.7, ',', 2],[254.0, 1200, 'K', 4],[319.0, 382, 'K', 6],[336.0, 398, 'K', 6]

ZrNiSn
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170435, 170437)
 Inorder to look for the possible enhanced TE properties obtainable in ZrNiSn withEg of sim0.54 e<missing VAR>V, power factor and optimal carrier concentrations arecalculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0.18, 'eV', 2],[82.0, -3, ',', 1],[105.0, 1200, 'K', 2],[132.0, 0.7, ',', 2],[226.0, 1200, 'K', 4],[291.0, 382, 'K', 6],[308.0, 398, 'K', 6]

V
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170451, 170451)
 Inorder to look for the possible enhanced TE properties obtainable in ZrNiSn withEg of sim0.54 e<missing VAR>V, power factor and optimal carrier concentrations arecalculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 0.18, 'eV', 2],[68.0, -3, ',', 1],[91.0, 1200, 'K', 2],[118.0, 0.7, ',', 2],[212.0, 1200, 'K', 4],[277.0, 382, 'K', 6],[294.0, 398, 'K', 6]

ZrNiSn
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170557, 170559)
 The maximum figure of merit ZT calculated at 1200 Kfor n<missing VAR>-type and p<missing VAR>-type ZrNiSn are sim0.6 and sim0.7, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 0.18, 'eV', 4],[38.0, -3, ',', 1],[15.0, 1200, 'K', 0],[10.0, 0.7, ',', 0],[104.0, 1200, 'K', 2],[169.0, 382, 'K', 4],[186.0, 398, 'K', 4]

ZrNiSn
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170590, 170592)
 The %efficiency obtained for n<missing VAR>-type ZrNiSn is sim5.1 % while for p<missing VAR>-type ZrNiSn issim6.1 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 0.18, 'eV', 5],[71.0, -3, ',', 2],[48.0, 1200, 'K', 1],[21.0, 0.7, ',', 1],[71.0, 1200, 'K', 1],[136.0, 382, 'K', 3],[153.0, 398, 'K', 3]

ZrNiSn
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170609, 170611)
 The %efficiency obtained for n<missing VAR>-type ZrNiSn is sim5.1 % while for p<missing VAR>-type ZrNiSn issim6.1 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 0.18, 'eV', 5],[90.0, -3, ',', 2],[67.0, 1200, 'K', 1],[40.0, 0.7, ',', 1],[52.0, 1200, 'K', 1],[117.0, 382, 'K', 3],[134.0, 398, 'K', 3]

ZrNiSn
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170759, 170761)
 Thethermal expansion behaviour in ZrNiSn is studied under quasi-harmonicapproximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[410.0, 0.18, 'eV', 9],[240.0, -3, ',', 6],[217.0, 1200, 'K', 5],[190.0, 0.7, ',', 5],[96.0, 1200, 'K', 3],[31.0, 382, 'K', 1],[14.0, 398, 'K', 1]

K
###Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations|Shivprasad S. Shastri,Sudhir K. Pandey###
(170805, 170805)
 The average linear thermal expansion coefficientalphaave(T) of sim7.8x<missing VAR>10-6 K-1 calculated in our work isquite close to the experimental values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[456.0, 0.18, 'eV', 10],[286.0, -3, ',', 7],[263.0, 1200, 'K', 6],[236.0, 0.7, ',', 6],[142.0, 1200, 'K', 4],[77.0, 382, 'K', 2],[60.0, 398, 'K', 2]

In
###Thermal spin transport and spin in thermoelectrics|Joseph P. Heremans###
(171070, 171070)
 In bothcases, it is possible to define a spin chemical potential whose gradient is themore practical conjugate force to spin transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 2, 'or', 4],[288.0, 3, 'above', 4],[366.0, 1, 'without', 6]

MnTe
###Thermal spin transport and spin in thermoelectrics|Joseph P. Heremans###
(171424, 171425)
 Magnon drag leads a simple binaryparamagnetic semiconductor, MnTe, to have zT > 1 without optimization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 2, 'or', 2],[66.0, 3, 'above', 2],[11.0, 1, 'without', 0]

(HCSC)
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(171545, 171550)
 The hot carrier solar cell (HCSC) has the potential for converting solarenergy into electrochemical energy with an efficiency of 85.4%.
Featurization successful!
0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 85.4, '%', 0],[302.0, 82, '%', 5],[387.0, 2540, 'K', 6]

HCSC
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(171608, 171611)
 For this, inaddition to an idealized light absorber, the HCSC has to be connected to theexternal load by means of the so-called emphmono-energetic energy selectivecontacts (E<missing VAR>SCs).
Featurization terminated normally.
0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 85.4, '%', 1],[241.0, 82, '%', 4],[326.0, 2540, 'K', 5]

Cs
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(171657, 171657)
 For this, inaddition to an idealized light absorber, the HCSC has to be connected to theexternal load by means of the so-called emphmono-energetic energy selectivecontacts (E<missing VAR>SCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 85.4, '%', 1],[195.0, 82, '%', 4],[280.0, 2540, 'K', 5]

In
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(171734, 171734)
In this respect, we model electron transport in non-ideal E<missing VAR>SCs using thetransport theory proposed by Datta and Landauer which has allowed us tocalculate the value of these parameters as a function of the temperature andelectrochemical potential of operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 85.4, '%', 4],[118.0, 82, '%', 1],[203.0, 2540, 'K', 2]

SCs
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(171756, 171757)
In this respect, we model electron transport in non-ideal E<missing VAR>SCs using thetransport theory proposed by Datta and Landauer which has allowed us tocalculate the value of these parameters as a function of the temperature andelectrochemical potential of operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 85.4, '%', 4],[95.0, 82, '%', 1],[180.0, 2540, 'K', 2]

HCSC
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(171843, 171846)
 Our findings also reveal that, topreserve the HCSC efficiency above 82%, the E<missing VAR>SCs could require in the order of3 times 1019 cm-3 electron states.
Featurization terminated normally.
0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 85.4, '%', 5],[6.0, 82, '%', 0],[91.0, 2540, 'K', 1]

SCs
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(171859, 171860)
 Our findings also reveal that, topreserve the HCSC efficiency above 82%, the E<missing VAR>SCs could require in the order of3 times 1019 cm-3 electron states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 85.4, '%', 5],[7.0, 82, '%', 0],[77.0, 2540, 'K', 1]

As
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(171891, 171891)
 As the E<missing VAR>SCs depart from ideality,the temperature of the hot carriers at which optimum efficiency is obtainedincreases to above 2540 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 85.4, '%', 6],[39.0, 82, '%', 1],[46.0, 2540, 'K', 0]

SCs
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(171896, 171897)
 As the E<missing VAR>SCs depart from ideality,the temperature of the hot carriers at which optimum efficiency is obtainedincreases to above 2540 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 85.4, '%', 6],[44.0, 82, '%', 1],[40.0, 2540, 'K', 0]

HCSC
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(172054, 172057)
 We are not aware of any material exhibitingthis figure of merit which illustrates the difficulty in putting the HCSCconcept into practice.
Featurization terminated normally.
0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[473.0, 85.4, '%', 8],[202.0, 82, '%', 3],[117.0, 2540, 'K', 2]

In
###Vibrational cooling and thermoelectric response of nanoelectromechanical systems|Liliana Arrachea,Niels Bode,Felix von Oppen###
(172262, 172262)
 In linear response, this theory describes thermoelectricrefrigerators in terms of their cooling efficiency and figure of merit ZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Vibrational cooling and thermoelectric response of nanoelectromechanical systems|Liliana Arrachea,Niels Bode,Felix von Oppen###
(172333, 172333)
 As an important consequence, this allows us to discuss the efficiencyof phonon refrigerators in relation to the fundamental Carnot efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Vibrational cooling and thermoelectric response of nanoelectromechanical systems|Liliana Arrachea,Niels Bode,Felix von Oppen###
(172494, 172494)
 In thequantum regime in which the vibrational motion is fast compared to theelectronic degrees of freedom, we can describe the electronic and phononicdynamics of the model in terms of master equations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Vibrational cooling and thermoelectric response of nanoelectromechanical systems|Liliana Arrachea,Niels Bode,Felix von Oppen###
(172567, 172567)
 In the complementaryclassical regime of slow vibrational motion, the dynamics is described in termsof an appropriate Langevin equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Vibrational cooling and thermoelectric response of nanoelectromechanical systems|Liliana Arrachea,Niels Bode,Felix von Oppen###
(172660, 172660)
 In contrast, the efficiencies are typically farfrom the Carnot limit in the classical regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbTe
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(172752, 172753)
Thermoelectric Alchemy Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 473, ',', 4],[318.0, 20, 'mWm', 7],[326.0, 300, 'K', 7],[344.0, 1.55, 'Wm', 7]

PbTe
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(172878, 172879)
 An effectiveapproach for increasing the power factor is to align the band extremum andachieve high band degeneracy (geq 12) near the Fermi level as realized inPbTe [textcolorbluePei et.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 473, ',', 2],[192.0, 20, 'mWm', 5],[200.0, 300, 'K', 5],[218.0, 1.55, 'Wm', 5]

Li2TlBi
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173030, 173033)
 By employing state-of-the-artfirst-principles methods with direct computation of phonon and carrierlifetime, we demonstrate that two new full-Heusler compounds Li2TlBi andLi2InBi, possessing a PbTe-like electronic structure, show exceptionallyhigh power factors (sim 20 mWm-1K-2 at 300 K) and low latticethermal conductivities (2.36 and 1.55 Wm-1K-1) at room temperature.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 473, ',', 3],[38.0, 20, 'mWm', 0],[46.0, 300, 'K', 0],[64.0, 1.55, 'Wm', 0]

Li2InBi
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173038, 173041)
 By employing state-of-the-artfirst-principles methods with direct computation of phonon and carrierlifetime, we demonstrate that two new full-Heusler compounds Li2TlBi andLi2InBi, possessing a PbTe-like electronic structure, show exceptionallyhigh power factors (sim 20 mWm-1K-2 at 300 K) and low latticethermal conductivities (2.36 and 1.55 Wm-1K-1) at room temperature.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 473, ',', 3],[30.0, 20, 'mWm', 0],[38.0, 300, 'K', 0],[56.0, 1.55, 'Wm', 0]

PbTe
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173048, 173049)
 By employing state-of-the-artfirst-principles methods with direct computation of phonon and carrierlifetime, we demonstrate that two new full-Heusler compounds Li2TlBi andLi2InBi, possessing a PbTe-like electronic structure, show exceptionallyhigh power factors (sim 20 mWm-1K-2 at 300 K) and low latticethermal conductivities (2.36 and 1.55 Wm-1K-1) at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 473, ',', 3],[22.0, 20, 'mWm', 0],[30.0, 300, 'K', 0],[48.0, 1.55, 'Wm', 0]

K
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173074, 173074)
 By employing state-of-the-artfirst-principles methods with direct computation of phonon and carrierlifetime, we demonstrate that two new full-Heusler compounds Li2TlBi andLi2InBi, possessing a PbTe-like electronic structure, show exceptionallyhigh power factors (sim 20 mWm-1K-2 at 300 K) and low latticethermal conductivities (2.36 and 1.55 Wm-1K-1) at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 473, ',', 3],[3.0, 20, 'mWm', 0],[5.0, 300, 'K', 0],[23.0, 1.55, 'Wm', 0]

K
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173100, 173100)
 By employing state-of-the-artfirst-principles methods with direct computation of phonon and carrierlifetime, we demonstrate that two new full-Heusler compounds Li2TlBi andLi2InBi, possessing a PbTe-like electronic structure, show exceptionallyhigh power factors (sim 20 mWm-1K-2 at 300 K) and low latticethermal conductivities (2.36 and 1.55 Wm-1K-1) at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 473, ',', 3],[29.0, 20, 'mWm', 0],[21.0, 300, 'K', 0],[3.0, 1.55, 'Wm', 0]

Tl
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173115, 173115)
The Tl+Bi3- (In+Bi3-) sublattice forms a rock-saltstructure, and the additional two valence electrons from Li atoms essentiallymake these compounds isovalent with Pb2+Te2-.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 473, ',', 4],[44.0, 20, 'mWm', 1],[36.0, 300, 'K', 1],[18.0, 1.55, 'Wm', 1]

Bi3
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173117, 173118)
The Tl+Bi3- (In+Bi3-) sublattice forms a rock-saltstructure, and the additional two valence electrons from Li atoms essentiallymake these compounds isovalent with Pb2+Te2-.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 473, ',', 4],[46.0, 20, 'mWm', 1],[38.0, 300, 'K', 1],[20.0, 1.55, 'Wm', 1]

In
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173122, 173122)
The Tl+Bi3- (In+Bi3-) sublattice forms a rock-saltstructure, and the additional two valence electrons from Li atoms essentiallymake these compounds isovalent with Pb2+Te2-.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 473, ',', 4],[51.0, 20, 'mWm', 1],[43.0, 300, 'K', 1],[25.0, 1.55, 'Wm', 1]

Li
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173157, 173157)
The Tl+Bi3- (In+Bi3-) sublattice forms a rock-saltstructure, and the additional two valence electrons from Li atoms essentiallymake these compounds isovalent with Pb2+Te2-.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 473, ',', 4],[86.0, 20, 'mWm', 1],[78.0, 300, 'K', 1],[60.0, 1.55, 'Wm', 1]

Te2
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173177, 173178)
The Tl+Bi3- (In+Bi3-) sublattice forms a rock-saltstructure, and the additional two valence electrons from Li atoms essentiallymake these compounds isovalent with Pb2+Te2-.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 473, ',', 4],[106.0, 20, 'mWm', 1],[98.0, 300, 'K', 1],[80.0, 1.55, 'Wm', 1]

TlBi
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173195, 173196)
 The larger rock-saltsublattice of TlBi (InBi) shifts the valence band maximum from L<missing VAR> point to themiddle of the Sigma line, increasing the band degeneracy from fourfold totwelvefold.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 473, ',', 5],[124.0, 20, 'mWm', 2],[116.0, 300, 'K', 2],[98.0, 1.55, 'Wm', 2]

(InBi)
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173198, 173201)
 The larger rock-saltsublattice of TlBi (InBi) shifts the valence band maximum from L<missing VAR> point to themiddle of the Sigma line, increasing the band degeneracy from fourfold totwelvefold.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 473, ',', 5],[127.0, 20, 'mWm', 2],[119.0, 300, 'K', 2],[101.0, 1.55, 'Wm', 2]

PbTe
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173270, 173271)
 On the other hand, resonance bond in the PbTe-like sublattice andsoft Tl-Bi (In-Bi) bonding interaction is responsible for intrinsic low latticethermal conductivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 473, ',', 6],[199.0, 20, 'mWm', 3],[191.0, 300, 'K', 3],[173.0, 1.55, 'Wm', 3]

Tl
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173282, 173282)
 On the other hand, resonance bond in the PbTe-like sublattice andsoft Tl-Bi (In-Bi) bonding interaction is responsible for intrinsic low latticethermal conductivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 473, ',', 6],[211.0, 20, 'mWm', 3],[203.0, 300, 'K', 3],[185.0, 1.55, 'Wm', 3]

Bi
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173284, 173284)
 On the other hand, resonance bond in the PbTe-like sublattice andsoft Tl-Bi (In-Bi) bonding interaction is responsible for intrinsic low latticethermal conductivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 473, ',', 6],[213.0, 20, 'mWm', 3],[205.0, 300, 'K', 3],[187.0, 1.55, 'Wm', 3]

In
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173287, 173287)
 On the other hand, resonance bond in the PbTe-like sublattice andsoft Tl-Bi (In-Bi) bonding interaction is responsible for intrinsic low latticethermal conductivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[392.0, 473, ',', 6],[216.0, 20, 'mWm', 3],[208.0, 300, 'K', 3],[190.0, 1.55, 'Wm', 3]

Bi
###Thermoelectric Alchemy: Designing A Chemical Analog to PbTe with Intrinsic High Band Degeneracy and Low Lattice Thermal Conductivity|Jiangang He,Yi Xia,S. Shahab Naghavi,Vidvuds Ozoliņš,Chris Wolverton###
(173289, 173289)
 On the other hand, resonance bond in the PbTe-like sublattice andsoft Tl-Bi (In-Bi) bonding interaction is responsible for intrinsic low latticethermal conductivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[394.0, 473, ',', 6],[218.0, 20, 'mWm', 3],[210.0, 300, 'K', 3],[192.0, 1.55, 'Wm', 3]

ScAgC
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173368, 173370)
First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 0, 'to', 6],[286.0, 10, 'eV', 6],[417.0, 8.5, 'eV', 8],[421.0, 300, 'K', 9],[447.0, 33, '%', 9],[500.0, 1200, 'K', 11],[517.0, -3, ',', 11],[558.0, -1, ',', 11],[579.0, -3, ',', 11],[618.0, 1200, 'K', 12],[629.0, 0.53, ',', 12],[649.0, 8.5, '%', 12]

(PV)
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173395, 173398)
 This work presents a theoretical study regarding photovoltaic (PV) thermoelectric (TE) applications of ScAgC.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 0, 'to', 5],[258.0, 10, 'eV', 5],[389.0, 8.5, 'eV', 7],[393.0, 300, 'K', 8],[419.0, 33, '%', 8],[472.0, 1200, 'K', 10],[489.0, -3, ',', 10],[530.0, -1, ',', 10],[551.0, -3, ',', 10],[590.0, 1200, 'K', 11],[601.0, 0.53, ',', 11],[621.0, 8.5, '%', 11]

ScAgC
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173413, 173415)
 This work presents a theoretical study regarding photovoltaic (PV) thermoelectric (TE) applications of ScAgC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 0, 'to', 5],[241.0, 10, 'eV', 5],[372.0, 8.5, 'eV', 7],[376.0, 300, 'K', 8],[402.0, 33, '%', 8],[455.0, 1200, 'K', 10],[472.0, -3, ',', 10],[513.0, -1, ',', 10],[534.0, -3, ',', 10],[573.0, 1200, 'K', 11],[584.0, 0.53, ',', 11],[604.0, 8.5, '%', 11]

V
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173477, 173477)
 DFT calculates a direct band-gap of sim0.47e<missing VAR>V, while G<missing VAR>0W0 method estimates a band-gap of sim1.01 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 0, 'to', 3],[179.0, 10, 'eV', 3],[310.0, 8.5, 'eV', 5],[314.0, 300, 'K', 6],[340.0, 33, '%', 6],[393.0, 1200, 'K', 8],[410.0, -3, ',', 8],[451.0, -1, ',', 8],[472.0, -3, ',', 8],[511.0, 1200, 'K', 9],[522.0, 0.53, ',', 9],[542.0, 8.5, '%', 9]

W0
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173484, 173485)
 DFT calculates a direct band-gap of sim0.47e<missing VAR>V, while G<missing VAR>0W0 method estimates a band-gap of sim1.01 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 0, 'to', 3],[171.0, 10, 'eV', 3],[302.0, 8.5, 'eV', 5],[306.0, 300, 'K', 6],[332.0, 33, '%', 6],[385.0, 1200, 'K', 8],[402.0, -3, ',', 8],[443.0, -1, ',', 8],[464.0, -3, ',', 8],[503.0, 1200, 'K', 9],[514.0, 0.53, ',', 9],[534.0, 8.5, '%', 9]

V
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173503, 173503)
 DFT calculates a direct band-gap of sim0.47e<missing VAR>V, while G<missing VAR>0W0 method estimates a band-gap of sim1.01 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 0, 'to', 3],[153.0, 10, 'eV', 3],[284.0, 8.5, 'eV', 5],[288.0, 300, 'K', 6],[314.0, 33, '%', 6],[367.0, 1200, 'K', 8],[384.0, -3, ',', 8],[425.0, -1, ',', 8],[446.0, -3, ',', 8],[485.0, 1200, 'K', 9],[496.0, 0.53, ',', 9],[516.0, 8.5, '%', 9]

B1
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173533, 173534)
 We usedparabola fitting to estimate effective mass (m) values for bands B1-B4 atGamma-point, which are sim -0.087 (-0.075), sim -0.17 (-0.27), sim-0.17 (-0.27), and sim 0.049 (0.058) along the Gamma-X<missing VAR> (Gamma-L)direction, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0, 'to', 2],[122.0, 10, 'eV', 2],[253.0, 8.5, 'eV', 4],[257.0, 300, 'K', 5],[283.0, 33, '%', 5],[336.0, 1200, 'K', 7],[353.0, -3, ',', 7],[394.0, -1, ',', 7],[415.0, -3, ',', 7],[454.0, 1200, 'K', 8],[465.0, 0.53, ',', 8],[485.0, 8.5, '%', 8]

B4
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173536, 173537)
 We usedparabola fitting to estimate effective mass (m) values for bands B1-B4 atGamma-point, which are sim -0.087 (-0.075), sim -0.17 (-0.27), sim-0.17 (-0.27), and sim 0.049 (0.058) along the Gamma-X<missing VAR> (Gamma-L)direction, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 0, 'to', 2],[119.0, 10, 'eV', 2],[250.0, 8.5, 'eV', 4],[254.0, 300, 'K', 5],[280.0, 33, '%', 5],[333.0, 1200, 'K', 7],[350.0, -3, ',', 7],[391.0, -1, ',', 7],[412.0, -3, ',', 7],[451.0, 1200, 'K', 8],[462.0, 0.53, ',', 8],[482.0, 8.5, '%', 8]

V
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173743, 173743)
 The lowestcalculated value of reflectivity r<missing VAR>(omega) is sim0.24 at sim4.7 e<missing VAR>V, andthe highest calculated value of absorption coefficient alpha (omega ) issim1.7times 106 cm-1 at sim 8.5 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0, 'to', 2],[87.0, 10, 'eV', 2],[44.0, 8.5, 'eV', 0],[48.0, 300, 'K', 1],[74.0, 33, '%', 1],[127.0, 1200, 'K', 3],[144.0, -3, ',', 3],[185.0, -1, ',', 3],[206.0, -3, ',', 3],[245.0, 1200, 'K', 4],[256.0, 0.53, ',', 4],[276.0, 8.5, '%', 4]

At
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173790, 173790)
 At 300 K, we expect a maximumsolar efficiency (SLME) of sim33% at sim1 mu m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 0, 'to', 3],[134.0, 10, 'eV', 3],[3.0, 8.5, 'eV', 1],[1.0, 300, 'K', 0],[27.0, 33, '%', 0],[80.0, 1200, 'K', 2],[97.0, -3, ',', 2],[138.0, -1, ',', 2],[159.0, -3, ',', 2],[198.0, 1200, 'K', 3],[209.0, 0.53, ',', 3],[229.0, 8.5, '%', 3]

S
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173808, 173808)
 At 300 K, we expect a maximumsolar efficiency (SLME) of sim33% at sim1 mu m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0, 'to', 3],[152.0, 10, 'eV', 3],[21.0, 8.5, 'eV', 1],[17.0, 300, 'K', 0],[9.0, 33, '%', 0],[62.0, 1200, 'K', 2],[79.0, -3, ',', 2],[120.0, -1, ',', 2],[141.0, -3, ',', 2],[180.0, 1200, 'K', 3],[191.0, 0.53, ',', 3],[211.0, 8.5, '%', 3]

W
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173853, 173853)
 The lattice thermalconductivity kappaph shows maximum value of sim3.8 Wm<missing VAR>-1K-1 at1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 0, 'to', 4],[197.0, 10, 'eV', 4],[66.0, 8.5, 'eV', 2],[62.0, 300, 'K', 1],[36.0, 33, '%', 1],[17.0, 1200, 'K', 1],[34.0, -3, ',', 1],[75.0, -1, ',', 1],[96.0, -3, ',', 1],[135.0, 1200, 'K', 2],[146.0, 0.53, ',', 2],[166.0, 8.5, '%', 2]

K
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173857, 173857)
 The lattice thermalconductivity kappaph shows maximum value of sim3.8 Wm<missing VAR>-1K-1 at1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 0, 'to', 4],[201.0, 10, 'eV', 4],[70.0, 8.5, 'eV', 2],[66.0, 300, 'K', 1],[40.0, 33, '%', 1],[13.0, 1200, 'K', 1],[30.0, -3, ',', 1],[71.0, -1, ',', 1],[92.0, -3, ',', 1],[131.0, 1200, 'K', 2],[142.0, 0.53, ',', 2],[162.0, 8.5, '%', 2]

K
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173866, 173866)
 The lattice thermalconductivity kappaph shows maximum value of sim3.8 Wm<missing VAR>-1K-1 at1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 0, 'to', 4],[210.0, 10, 'eV', 4],[79.0, 8.5, 'eV', 2],[75.0, 300, 'K', 1],[49.0, 33, '%', 1],[4.0, 1200, 'K', 1],[21.0, -3, ',', 1],[62.0, -1, ',', 1],[83.0, -3, ',', 1],[122.0, 1200, 'K', 2],[133.0, 0.53, ',', 2],[153.0, 8.5, '%', 2]

At
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173869, 173869)
 At 1200 K, for electron doping of sim3.9times1021cm-3,the maximum value of S2sigma /tau is sim145 times 1014 muWK-2cm-1s<missing VAR>-1, while for hole doping ofsim1.5times1021cm-3, it is sim123 times 1014 muWK-2cm-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 0, 'to', 5],[213.0, 10, 'eV', 5],[82.0, 8.5, 'eV', 3],[78.0, 300, 'K', 2],[52.0, 33, '%', 2],[1.0, 1200, 'K', 0],[18.0, -3, ',', 0],[59.0, -1, ',', 0],[80.0, -3, ',', 0],[119.0, 1200, 'K', 1],[130.0, 0.53, ',', 1],[150.0, 8.5, '%', 1]

S2
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173900, 173901)
 At 1200 K, for electron doping of sim3.9times1021cm-3,the maximum value of S2sigma /tau is sim145 times 1014 muWK-2cm-1s<missing VAR>-1, while for hole doping ofsim1.5times1021cm-3, it is sim123 times 1014 muWK-2cm-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 0, 'to', 5],[244.0, 10, 'eV', 5],[113.0, 8.5, 'eV', 3],[109.0, 300, 'K', 2],[83.0, 33, '%', 2],[30.0, 1200, 'K', 0],[13.0, -3, ',', 0],[27.0, -1, ',', 0],[48.0, -3, ',', 0],[87.0, 1200, 'K', 1],[98.0, 0.53, ',', 1],[118.0, 8.5, '%', 1]

WK
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173920, 173921)
 At 1200 K, for electron doping of sim3.9times1021cm-3,the maximum value of S2sigma /tau is sim145 times 1014 muWK-2cm-1s<missing VAR>-1, while for hole doping ofsim1.5times1021cm-3, it is sim123 times 1014 muWK-2cm-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 0, 'to', 5],[264.0, 10, 'eV', 5],[133.0, 8.5, 'eV', 3],[129.0, 300, 'K', 2],[103.0, 33, '%', 2],[50.0, 1200, 'K', 0],[33.0, -3, ',', 0],[7.0, -1, ',', 0],[28.0, -3, ',', 0],[67.0, 1200, 'K', 1],[78.0, 0.53, ',', 1],[98.0, 8.5, '%', 1]

WK
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(173968, 173969)
 At 1200 K, for electron doping of sim3.9times1021cm-3,the maximum value of S2sigma /tau is sim145 times 1014 muWK-2cm-1s<missing VAR>-1, while for hole doping ofsim1.5times1021cm-3, it is sim123 times 1014 muWK-2cm-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 0, 'to', 5],[312.0, 10, 'eV', 5],[181.0, 8.5, 'eV', 3],[177.0, 300, 'K', 2],[151.0, 33, '%', 2],[98.0, 1200, 'K', 0],[81.0, -3, ',', 0],[40.0, -1, ',', 0],[19.0, -3, ',', 0],[19.0, 1200, 'K', 1],[30.0, 0.53, ',', 1],[50.0, 8.5, '%', 1]

K
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(174041, 174041)
 The highest ZT at 1200 K is expected to be sim0.53,whereas the optimal %efficiency is predicted as sim8.5% for cold (hot)temperatures of 300 (1200) K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 0, 'to', 6],[385.0, 10, 'eV', 6],[254.0, 8.5, 'eV', 4],[250.0, 300, 'K', 3],[224.0, 33, '%', 3],[171.0, 1200, 'K', 1],[154.0, -3, ',', 1],[113.0, -1, ',', 1],[92.0, -3, ',', 1],[53.0, 1200, 'K', 0],[42.0, 0.53, ',', 0],[22.0, 8.5, '%', 0]

ScAgC
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(174052, 174054)
 The results suggest that ScAgC can be a potentialcandidate for solar cell and TE applications.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 0, 'to', 7],[396.0, 10, 'eV', 7],[265.0, 8.5, 'eV', 5],[261.0, 300, 'K', 4],[235.0, 33, '%', 4],[182.0, 1200, 'K', 2],[165.0, -3, ',', 2],[124.0, -1, ',', 2],[103.0, -3, ',', 2],[64.0, 1200, 'K', 1],[53.0, 0.53, ',', 1],[33.0, 8.5, '%', 1]

CuCrS2
###Transport properties of Layer-Antiferromagnet CuCrS2: A possible thermoelectric material|G. C. Tewari,T. S. Tripathi,A. K. Rastogi###
(174099, 174102)
Transport properties of Layer-Antiferromagnet CuCrS2 A possible thermoelectric material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 15, 'K', 1],[68.0, 300, 'K', 1],[85.0, 40, 'K', 2],[100.0, 2, 'K', 2],[103.0, 300, 'K', 2],[120.0, 100, 'K', 3],[168.0, 10, 'to', 4],[169.0, 20, 'times', 4],[337.0, 1, 'for', 7]

CuCrS2
###Transport properties of Layer-Antiferromagnet CuCrS2: A possible thermoelectric material|G. C. Tewari,T. S. Tripathi,A. K. Rastogi###
(174154, 174157)
 The electrical, thermal conductivity and Seebeck coefficient of the quenched,annealed and slowly cooled phases of the layer compound CuCrS2 have beenreported between 15K to 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 15, 'K', 0],[13.0, 300, 'K', 0],[30.0, 40, 'K', 1],[45.0, 2, 'K', 1],[48.0, 300, 'K', 1],[65.0, 100, 'K', 2],[113.0, 10, 'to', 3],[114.0, 20, 'times', 3],[282.0, 1, 'for', 6]

V/K
###Transport properties of Layer-Antiferromagnet CuCrS2: A possible thermoelectric material|G. C. Tewari,T. S. Tripathi,A. K. Rastogi###
(174353, 174355)
 We findthat the Seebeck coefficient is between 200-450 microV/K and is unusually largefor the observed resistivity values of between 5-100 m<missing VAR>Ohm-cm at roomtemperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[186.0, 15, 'K', 5],[183.0, 300, 'K', 5],[166.0, 40, 'K', 4],[151.0, 2, 'K', 4],[148.0, 300, 'K', 4],[131.0, 100, 'K', 3],[83.0, 10, 'to', 2],[82.0, 20, 'times', 2],[84.0, 1, 'for', 1]

K
###Transport properties of Layer-Antiferromagnet CuCrS2: A possible thermoelectric material|G. C. Tewari,T. S. Tripathi,A. K. Rastogi###
(174453, 174453)
 Thethermal conductivity K is mostly due to lattice conduction and is reduced bythe disorder in Cu- occupancy in our quenched phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 15, 'K', 7],[283.0, 300, 'K', 7],[266.0, 40, 'K', 6],[251.0, 2, 'K', 6],[248.0, 300, 'K', 6],[231.0, 100, 'K', 5],[183.0, 10, 'to', 4],[182.0, 20, 'times', 4],[14.0, 1, 'for', 1]

Cu
###Transport properties of Layer-Antiferromagnet CuCrS2: A possible thermoelectric material|G. C. Tewari,T. S. Tripathi,A. K. Rastogi###
(174482, 174482)
 Thethermal conductivity K is mostly due to lattice conduction and is reduced bythe disorder in Cu- occupancy in our quenched phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 15, 'K', 7],[312.0, 300, 'K', 7],[295.0, 40, 'K', 6],[280.0, 2, 'K', 6],[277.0, 300, 'K', 6],[260.0, 100, 'K', 5],[212.0, 10, 'to', 4],[211.0, 20, 'times', 4],[43.0, 1, 'for', 1]

K
###Transport properties of Layer-Antiferromagnet CuCrS2: A possible thermoelectric material|G. C. Tewari,T. S. Tripathi,A. K. Rastogi###
(174541, 174541)
 A dramatic reduction ofelectrical and thermal conductivity is found as the antiferromagnetictransition is approached from the paramagnetic region, and K subsequently risesin the ordered phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[374.0, 15, 'K', 8],[371.0, 300, 'K', 8],[354.0, 40, 'K', 7],[339.0, 2, 'K', 7],[336.0, 300, 'K', 7],[319.0, 100, 'K', 6],[271.0, 10, 'to', 5],[270.0, 20, 'times', 5],[102.0, 1, 'for', 2]

W
###Large enhancement of the thermoelectric figure of merit in a ridged quantum well|Avto Tavkhelidze###
(174650, 174650)
 Recently new quantum features were observed and studied in the ridged quantumwells (RQW).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Large enhancement of the thermoelectric figure of merit in a ridged quantum well|Avto Tavkhelidze###
(174703, 174703)
 As result, chemical potential of RQW increases and becomes theridge height dependent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Large enhancement of the thermoelectric figure of merit in a ridged quantum well|Avto Tavkhelidze###
(174716, 174716)
 As result, chemical potential of RQW increases and becomes theridge height dependent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Large enhancement of the thermoelectric figure of merit in a ridged quantum well|Avto Tavkhelidze###
(174748, 174748)
 Here we propose system comprising of RQW and additionallayer on the top of the ridges forming periodic series of p+-n+ junctions (ormetal-n+ junctions).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large enhancement of the thermoelectric figure of merit in a ridged quantum well|Avto Tavkhelidze###
(174798, 174798)
 In such systems charge depletion region develops insidethe ridges and effective ridge height reduces, becoming rather strong functionof temperature T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large enhancement of the thermoelectric figure of merit in a ridged quantum well|Avto Tavkhelidze###
(174868, 174868)
 Consequently, T<missing VAR> dependence of chemical potential magnifiesand Seebeck coefficient S increases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large enhancement of the thermoelectric figure of merit in a ridged quantum well|Avto Tavkhelidze###
(174877, 174877)
 We investigate S in the system ofsemiconductor RQW having abrupt p+-n+ junctions or metal-n+ junctions on thetop of the ridges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Large enhancement of the thermoelectric figure of merit in a ridged quantum well|Avto Tavkhelidze###
(174892, 174892)
 We investigate S in the system ofsemiconductor RQW having abrupt p+-n+ junctions or metal-n+ junctions on thetop of the ridges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large enhancement of the thermoelectric figure of merit in a ridged quantum well|Avto Tavkhelidze###
(174956, 174956)
 Analysis made on the basis of Boltzmann transport equationsshows dramatic increase in S for both cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Large enhancement of the thermoelectric figure of merit in a ridged quantum well|Avto Tavkhelidze###
(174965, 174965)
 At the same time other transportcoefficients remain unaffected by the junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(BP)
###Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance|Guangzhao Qin,Qing-Bo Yan,Zhenzhen Qin,Sheng-Ying Yue,Hui-Juan Cui,Qing-Rong Zheng,Gang Su###
(175107, 175110)
 We systematically investigated the geometric, electronic and thermoelectric(TE) properties of bulk black phosphorus (BP) under strain.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0.72, 'at', 3],[118.0, 800, ',', 3],[132.0, 0.87, 'by', 3]

BP
###Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance|Guangzhao Qin,Qing-Bo Yan,Zhenzhen Qin,Sheng-Ying Yue,Hui-Juan Cui,Qing-Rong Zheng,Gang Su###
(175128, 175129)
 The hinge-likestructure of BP brings unusual mechanical responses such as anisotropic Youngs<missing VAR>modulus and negative Poissons<missing VAR> ratio.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 0.72, 'at', 2],[99.0, 800, ',', 2],[113.0, 0.87, 'by', 2]

BP
###Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance|Guangzhao Qin,Qing-Bo Yan,Zhenzhen Qin,Sheng-Ying Yue,Hui-Juan Cui,Qing-Rong Zheng,Gang Su###
(175171, 175172)
 A sensitive electronic structure of BPmakes it transform among metal, direct and indirect semiconductors understrain.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0.72, 'at', 1],[56.0, 800, ',', 1],[70.0, 0.87, 'by', 1]

BP
###Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance|Guangzhao Qin,Qing-Bo Yan,Zhenzhen Qin,Sheng-Ying Yue,Hui-Juan Cui,Qing-Rong Zheng,Gang Su###
(175215, 175216)
 The maximal figure of merit ZT of BP is found to be 0.72 at800,mathrmK that could be enhanced to 0.87 by exerting an appropriatestrain, revealing BP could be a potential medium-high temperature TE material.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0.72, 'at', 0],[12.0, 800, ',', 0],[26.0, 0.87, 'by', 0]

K
###Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance|Guangzhao Qin,Qing-Bo Yan,Zhenzhen Qin,Sheng-Ying Yue,Hui-Juan Cui,Qing-Rong Zheng,Gang Su###
(175231, 175231)
 The maximal figure of merit ZT of BP is found to be 0.72 at800,mathrmK that could be enhanced to 0.87 by exerting an appropriatestrain, revealing BP could be a potential medium-high temperature TE material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.72, 'at', 0],[3.0, 800, ',', 0],[11.0, 0.87, 'by', 0]

BP
###Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance|Guangzhao Qin,Qing-Bo Yan,Zhenzhen Qin,Sheng-Ying Yue,Hui-Juan Cui,Qing-Rong Zheng,Gang Su###
(175256, 175257)
 The maximal figure of merit ZT of BP is found to be 0.72 at800,mathrmK that could be enhanced to 0.87 by exerting an appropriatestrain, revealing BP could be a potential medium-high temperature TE material.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.72, 'at', 0],[28.0, 800, ',', 0],[14.0, 0.87, 'by', 0]

BP
###Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance|Guangzhao Qin,Qing-Bo Yan,Zhenzhen Qin,Sheng-Ying Yue,Hui-Juan Cui,Qing-Rong Zheng,Gang Su###
(175372, 175373)
 By comparing the structure of BP with SnSe, a family of potential TEmaterials with hinge-like structure are suggested.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.72, 'at', 2],[144.0, 800, ',', 2],[130.0, 0.87, 'by', 2]

SnSe
###Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance|Guangzhao Qin,Qing-Bo Yan,Zhenzhen Qin,Sheng-Ying Yue,Hui-Juan Cui,Qing-Rong Zheng,Gang Su###
(175377, 175378)
 By comparing the structure of BP with SnSe, a family of potential TEmaterials with hinge-like structure are suggested.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 0.72, 'at', 2],[149.0, 800, ',', 2],[135.0, 0.87, 'by', 2]

BP
###Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance|Guangzhao Qin,Qing-Bo Yan,Zhenzhen Qin,Sheng-Ying Yue,Hui-Juan Cui,Qing-Rong Zheng,Gang Su###
(175427, 175428)
 This study not only exposesvarious novel properties of BP under strain, but also proposes effectivestrategies to seek for better TE materials.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 0.72, 'at', 3],[199.0, 800, ',', 3],[185.0, 0.87, 'by', 3]

Si
###Atomistic calculation of the thermoelectric properties of Si nanowires|Igor Bejenari,Peter Kratzer###
(175482, 175482)
Atomistic calculation of the thermoelectric properties of Si nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1.6, 'nm', 1],[48.0, 0, 'K', 1],[52.0, 1000, 'K', 1],[367.0, 195, 'cm', 9]

Si
###Atomistic calculation of the thermoelectric properties of Si nanowires|Igor Bejenari,Peter Kratzer###
(175498, 175498)
 The thermoelectric properties of 1.6 nm-thick Si square nanowires with [100]crystalline orientation are calculated over a wide temperature range from 0 Kto 1000 K, taking into account atomistic electron-phonon interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1.6, 'nm', 0],[32.0, 0, 'K', 0],[36.0, 1000, 'K', 0],[351.0, 195, 'cm', 8]

In
###Atomistic calculation of the thermoelectric properties of Si nanowires|Igor Bejenari,Peter Kratzer###
(175552, 175552)
 In ourmodel, the [010] and [001] facets are passivated by hydrogen and there areSi-Si dimers on the nanowire surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1.6, 'nm', 1],[22.0, 0, 'K', 1],[18.0, 1000, 'K', 1],[297.0, 195, 'cm', 7]

Si
###Atomistic calculation of the thermoelectric properties of Si nanowires|Igor Bejenari,Peter Kratzer###
(175589, 175589)
 In ourmodel, the [010] and [001] facets are passivated by hydrogen and there areSi-Si dimers on the nanowire surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1.6, 'nm', 1],[59.0, 0, 'K', 1],[55.0, 1000, 'K', 1],[260.0, 195, 'cm', 7]

Si
###Atomistic calculation of the thermoelectric properties of Si nanowires|Igor Bejenari,Peter Kratzer###
(175591, 175591)
 In ourmodel, the [010] and [001] facets are passivated by hydrogen and there areSi-Si dimers on the nanowire surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1.6, 'nm', 1],[61.0, 0, 'K', 1],[57.0, 1000, 'K', 1],[258.0, 195, 'cm', 7]

At
###Atomistic calculation of the thermoelectric properties of Si nanowires|Igor Bejenari,Peter Kratzer###
(175835, 175835)
 At room temperature, the electron mobility is 195 cm2/(Vs)and increases with temperature, while a figure-of-mertit ZT0.38 is reached forn<missing VAR>-type doping with a concentration of n<missing VAR>1019 cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 1.6, 'nm', 8],[305.0, 0, 'K', 8],[301.0, 1000, 'K', 8],[14.0, 195, 'cm', 0]

Ni
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(175929, 175929)
Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 70, 'nm', 0],[89.0, 70, 'nm', 2],[141.0, 10, '%', 3],[188.0, 1, '%', 3],[196.0, 295, 'K', 4],[202.0, 0, 'T', 4],[254.0, 0.02, 'was', 5],[303.0, 10, '%', 6],[310.0, 0.5, 'T', 6],[341.0, 0, ',', 6],[443.0, 20, '%', 9]

(NW)
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(175959, 175962)
 Thermoelectric (TE) properties of a single nanowire (NW) are investigated ina microlab which allows the determination of the Seebeck coefficient S and theconductivity sigma.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 70, 'nm', 1],[56.0, 70, 'nm', 1],[108.0, 10, '%', 2],[155.0, 1, '%', 2],[163.0, 295, 'K', 3],[169.0, 0, 'T', 3],[221.0, 0.02, 'was', 4],[270.0, 10, '%', 5],[277.0, 0.5, 'T', 5],[308.0, 0, ',', 5],[410.0, 20, '%', 8]

S
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(175991, 175991)
 Thermoelectric (TE) properties of a single nanowire (NW) are investigated ina microlab which allows the determination of the Seebeck coefficient S and theconductivity sigma.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 70, 'nm', 1],[27.0, 70, 'nm', 1],[79.0, 10, '%', 2],[126.0, 1, '%', 2],[134.0, 295, 'K', 3],[140.0, 0, 'T', 3],[192.0, 0.02, 'was', 4],[241.0, 10, '%', 5],[248.0, 0.5, 'T', 5],[279.0, 0, ',', 5],[381.0, 20, '%', 8]

Ni
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176023, 176023)
 A significiant influence of the magnetization of a 70 nmferromagnetic Ni-NW on its power factor S2sigma is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 70, 'nm', 2],[5.0, 70, 'nm', 0],[47.0, 10, '%', 1],[94.0, 1, '%', 1],[102.0, 295, 'K', 2],[108.0, 0, 'T', 2],[160.0, 0.02, 'was', 3],[209.0, 10, '%', 4],[216.0, 0.5, 'T', 4],[247.0, 0, ',', 4],[349.0, 20, '%', 7]

NW
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176025, 176026)
 A significiant influence of the magnetization of a 70 nmferromagnetic Ni-NW on its power factor S2sigma is observed.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 70, 'nm', 2],[7.0, 70, 'nm', 0],[44.0, 10, '%', 1],[91.0, 1, '%', 1],[99.0, 295, 'K', 2],[105.0, 0, 'T', 2],[157.0, 0.02, 'was', 3],[206.0, 10, '%', 4],[213.0, 0.5, 'T', 4],[244.0, 0, ',', 4],[346.0, 20, '%', 7]

S2
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176036, 176037)
 A significiant influence of the magnetization of a 70 nmferromagnetic Ni-NW on its power factor S2sigma is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 70, 'nm', 2],[18.0, 70, 'nm', 0],[33.0, 10, '%', 1],[80.0, 1, '%', 1],[88.0, 295, 'K', 2],[94.0, 0, 'T', 2],[146.0, 0.02, 'was', 3],[195.0, 10, '%', 4],[202.0, 0.5, 'T', 4],[233.0, 0, ',', 4],[335.0, 20, '%', 7]

P
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176063, 176063)
 We detecteda strong magneto thermopower effect (MTP) of about 10% and an anisotropicmagneto resistance (AMR) as a function of an external magnetic field B in theorder of 1%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 70, 'nm', 3],[45.0, 70, 'nm', 1],[7.0, 10, '%', 0],[54.0, 1, '%', 0],[62.0, 295, 'K', 1],[68.0, 0, 'T', 1],[120.0, 0.02, 'was', 2],[169.0, 10, '%', 3],[176.0, 0.5, 'T', 3],[207.0, 0, ',', 3],[309.0, 20, '%', 6]

B
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176106, 176106)
 We detecteda strong magneto thermopower effect (MTP) of about 10% and an anisotropicmagneto resistance (AMR) as a function of an external magnetic field B in theorder of 1%.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 70, 'nm', 3],[88.0, 70, 'nm', 1],[36.0, 10, '%', 0],[11.0, 1, '%', 0],[19.0, 295, 'K', 1],[25.0, 0, 'T', 1],[77.0, 0.02, 'was', 2],[126.0, 10, '%', 3],[133.0, 0.5, 'T', 3],[164.0, 0, ',', 3],[266.0, 20, '%', 6]

At
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176121, 176121)
 At T<missing VAR>  295 K and B  0 T we determined the absolute value of S  -(19 pm 2) muV/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 70, 'nm', 4],[103.0, 70, 'nm', 2],[51.0, 10, '%', 1],[4.0, 1, '%', 1],[4.0, 295, 'K', 0],[10.0, 0, 'T', 0],[62.0, 0.02, 'was', 1],[111.0, 10, '%', 2],[118.0, 0.5, 'T', 2],[149.0, 0, ',', 2],[251.0, 20, '%', 5]

B
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176129, 176129)
 At T<missing VAR>  295 K and B  0 T we determined the absolute value of S  -(19 pm 2) muV/K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 70, 'nm', 4],[111.0, 70, 'nm', 2],[59.0, 10, '%', 1],[12.0, 1, '%', 1],[4.0, 295, 'K', 0],[2.0, 0, 'T', 0],[54.0, 0.02, 'was', 1],[103.0, 10, '%', 2],[110.0, 0.5, 'T', 2],[141.0, 0, ',', 2],[243.0, 20, '%', 5]

S
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176145, 176145)
 At T<missing VAR>  295 K and B  0 T we determined the absolute value of S  -(19 pm 2) muV/K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 70, 'nm', 4],[127.0, 70, 'nm', 2],[75.0, 10, '%', 1],[28.0, 1, '%', 1],[20.0, 295, 'K', 0],[14.0, 0, 'T', 0],[38.0, 0.02, 'was', 1],[87.0, 10, '%', 2],[94.0, 0.5, 'T', 2],[125.0, 0, ',', 2],[227.0, 20, '%', 5]

V/K
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176160, 176162)
 At T<missing VAR>  295 K and B  0 T we determined the absolute value of S  -(19 pm 2) muV/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[233.0, 70, 'nm', 4],[142.0, 70, 'nm', 2],[90.0, 10, '%', 1],[43.0, 1, '%', 1],[35.0, 295, 'K', 0],[29.0, 0, 'T', 0],[21.0, 0.02, 'was', 1],[70.0, 10, '%', 2],[77.0, 0.5, 'T', 2],[108.0, 0, ',', 2],[210.0, 20, '%', 5]

At
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176165, 176165)
 At zero field the figure of merit ZT approx 0.02 wascalculated using the Wiedemann-Franz-law for the thermal conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 70, 'nm', 5],[147.0, 70, 'nm', 3],[95.0, 10, '%', 2],[48.0, 1, '%', 2],[40.0, 295, 'K', 1],[34.0, 0, 'T', 1],[18.0, 0.02, 'was', 0],[67.0, 10, '%', 1],[74.0, 0.5, 'T', 1],[105.0, 0, ',', 1],[207.0, 20, '%', 4]

S
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176212, 176212)
 Thethermopower S increases considerably as a function of B up to 10% at B  0.5 T,and with a magneto thermopower of partialS/partialB approx - (3.8 pm 0,5)muV/(K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 70, 'nm', 6],[194.0, 70, 'nm', 4],[142.0, 10, '%', 3],[95.0, 1, '%', 3],[87.0, 295, 'K', 2],[81.0, 0, 'T', 2],[29.0, 0.02, 'was', 1],[20.0, 10, '%', 0],[27.0, 0.5, 'T', 0],[58.0, 0, ',', 0],[160.0, 20, '%', 3]

B
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176226, 176226)
 Thethermopower S increases considerably as a function of B up to 10% at B  0.5 T,and with a magneto thermopower of partialS/partialB approx - (3.8 pm 0,5)muV/(K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 70, 'nm', 6],[208.0, 70, 'nm', 4],[156.0, 10, '%', 3],[109.0, 1, '%', 3],[101.0, 295, 'K', 2],[95.0, 0, 'T', 2],[43.0, 0.02, 'was', 1],[6.0, 10, '%', 0],[13.0, 0.5, 'T', 0],[44.0, 0, ',', 0],[146.0, 20, '%', 3]

B
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176237, 176237)
 Thethermopower S increases considerably as a function of B up to 10% at B  0.5 T,and with a magneto thermopower of partialS/partialB approx - (3.8 pm 0,5)muV/(K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 70, 'nm', 6],[219.0, 70, 'nm', 4],[167.0, 10, '%', 3],[120.0, 1, '%', 3],[112.0, 295, 'K', 2],[106.0, 0, 'T', 2],[54.0, 0.02, 'was', 1],[5.0, 10, '%', 0],[2.0, 0.5, 'T', 0],[33.0, 0, ',', 0],[135.0, 20, '%', 3]

S
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176256, 176256)
 Thethermopower S increases considerably as a function of B up to 10% at B  0.5 T,and with a magneto thermopower of partialS/partialB approx - (3.8 pm 0,5)muV/(K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 70, 'nm', 6],[238.0, 70, 'nm', 4],[186.0, 10, '%', 3],[139.0, 1, '%', 3],[131.0, 295, 'K', 2],[125.0, 0, 'T', 2],[73.0, 0.02, 'was', 1],[24.0, 10, '%', 0],[17.0, 0.5, 'T', 0],[14.0, 0, ',', 0],[116.0, 20, '%', 3]

B
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176259, 176259)
 Thethermopower S increases considerably as a function of B up to 10% at B  0.5 T,and with a magneto thermopower of partialS/partialB approx - (3.8 pm 0,5)muV/(K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 70, 'nm', 6],[241.0, 70, 'nm', 4],[189.0, 10, '%', 3],[142.0, 1, '%', 3],[134.0, 295, 'K', 2],[128.0, 0, 'T', 2],[76.0, 0.02, 'was', 1],[27.0, 10, '%', 0],[20.0, 0.5, 'T', 0],[11.0, 0, ',', 0],[113.0, 20, '%', 3]

K
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176280, 176280)
 Thethermopower S increases considerably as a function of B up to 10% at B  0.5 T,and with a magneto thermopower of partialS/partialB approx - (3.8 pm 0,5)muV/(K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 70, 'nm', 6],[262.0, 70, 'nm', 4],[210.0, 10, '%', 3],[163.0, 1, '%', 3],[155.0, 295, 'K', 2],[149.0, 0, 'T', 2],[97.0, 0.02, 'was', 1],[48.0, 10, '%', 0],[41.0, 0.5, 'T', 0],[10.0, 0, ',', 0],[92.0, 20, '%', 3]

P
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176296, 176296)
 The AMR and MTP are related by partials/partialr approx -11pm 1 (partials  partialS/S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 70, 'nm', 8],[278.0, 70, 'nm', 6],[226.0, 10, '%', 5],[179.0, 1, '%', 5],[171.0, 295, 'K', 4],[165.0, 0, 'T', 4],[113.0, 0.02, 'was', 3],[64.0, 10, '%', 2],[57.0, 0.5, 'T', 2],[26.0, 0, ',', 2],[76.0, 20, '%', 1]

S
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176325, 176325)
 The AMR and MTP are related by partials/partialr approx -11pm 1 (partials  partialS/S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 70, 'nm', 8],[307.0, 70, 'nm', 6],[255.0, 10, '%', 5],[208.0, 1, '%', 5],[200.0, 295, 'K', 4],[194.0, 0, 'T', 4],[142.0, 0.02, 'was', 3],[93.0, 10, '%', 2],[86.0, 0.5, 'T', 2],[55.0, 0, ',', 2],[47.0, 20, '%', 1]

B
###Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field|Rüdiger Mitdank,Martin Handwerg,Corinna Steinweg,William Töllner,Mihaela Daub,Kornelius Nielsch,Saskia F. Fischer###
(176350, 176350)
 The TE efficiency increases in a transversalmagnetic field (B 0.5T) due to an enhanced power factor by nearly 20%.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[423.0, 70, 'nm', 9],[332.0, 70, 'nm', 7],[280.0, 10, '%', 6],[233.0, 1, '%', 6],[225.0, 295, 'K', 5],[219.0, 0, 'T', 5],[167.0, 0.02, 'was', 4],[118.0, 10, '%', 3],[111.0, 0.5, 'T', 3],[80.0, 0, ',', 3],[22.0, 20, '%', 0]

In
###Phosphorene nanoribbon as a promising candidate for thermoelectric applications|J. Zhang,H. J. Liu,L. Cheng,J. Wei,J. H. Liang,D. D. Fan,J. Shi,X. F. Tang,Q. J. Zhang###
(176403, 176403)
 In this work, the electronic properties of phosphorene nanoribbons withdifferent width and edge configurations are studied by using density functionaltheory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 4.0, 'at', 7]

N7
###Phosphorene nanoribbon as a promising candidate for thermoelectric applications|J. Zhang,H. J. Liu,L. Cheng,J. Wei,J. H. Liang,D. D. Fan,J. Shi,X. F. Tang,Q. J. Zhang###
(176673, 176674)
 Taking armchair nanoribbon with width N7 asan example, we calculate the lattice thermal conductivity with the help ofphonon Boltzmann transport equation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 4.0, 'at', 1]

Ru2NbAl
###Ferromagnetically correlated clusters in semi-metallic Ru2NbAl Heusler alloy|Sanchayita Mondal,Chandan Mazumdar,R. Ranganathan,Eric Alleno,P. C. Sreeparvathy,V. Kanchana,G. Vaitheeswaran###
(176806, 176809)
Ferromagnetically correlated clusters in semi-metallic Ru2NbAl Heusler alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 5, 'K', 2]

In
###Ferromagnetically correlated clusters in semi-metallic Ru2NbAl Heusler alloy|Sanchayita Mondal,Chandan Mazumdar,R. Ranganathan,Eric Alleno,P. C. Sreeparvathy,V. Kanchana,G. Vaitheeswaran###
(176816, 176816)
 In this work, we report the structural, magnetic and electrical and thermaltransport properties of the Heusler-type alloy Ru2NbAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 5, 'K', 1]

Ru2NbAl
###Ferromagnetically correlated clusters in semi-metallic Ru2NbAl Heusler alloy|Sanchayita Mondal,Chandan Mazumdar,R. Ranganathan,Eric Alleno,P. C. Sreeparvathy,V. Kanchana,G. Vaitheeswaran###
(176857, 176860)
 In this work, we report the structural, magnetic and electrical and thermaltransport properties of the Heusler-type alloy Ru2NbAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 5, 'K', 1]

K2
###Ferromagnetically correlated clusters in semi-metallic Ru2NbAl Heusler alloy|Sanchayita Mondal,Chandan Mazumdar,R. Ranganathan,Eric Alleno,P. C. Sreeparvathy,V. Kanchana,G. Vaitheeswaran###
(176991, 176992)
 The relatively small value of electronic contribution to specificheat, gamma (2.7 mJ/mol-K2), as well as the linear nature of temperaturedependence of Seebeck coefficient indicate a semi-metallic ground state with apseudo-gap that is also supported by our electronic structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 5, 'K', 2]

Ru2NbAl
###Ferromagnetically correlated clusters in semi-metallic Ru2NbAl Heusler alloy|Sanchayita Mondal,Chandan Mazumdar,R. Ranganathan,Eric Alleno,P. C. Sreeparvathy,V. Kanchana,G. Vaitheeswaran###
(177175, 177178)
 Although the absolute value of thermoelectric figure ofmerit is rather low (ZT  5.210-3) in Ru2NbAl, it is the largest among all thereported non-doped full Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 5, 'K', 4]

Sn
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177248, 177248)
 Tin-chalcogenides SnX<missing VAR> (X<missing VAR>  Te, Se and S) have been arousing research interestdue to their thermoelectric physical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, 'D', 2],[263.0, 2, 'D', 4],[381.0, 3.81, 'for', 6],[392.0, 2.51, 'for', 6],[403.0, 3.18, 'for', 6],[416.0, 300, 'K', 6],[419.0, 900, 'K', 6],[483.0, 2, 'D', 7]

Te
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177255, 177255)
 Tin-chalcogenides SnX<missing VAR> (X<missing VAR>  Te, Se and S) have been arousing research interestdue to their thermoelectric physical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 2, 'D', 2],[256.0, 2, 'D', 4],[374.0, 3.81, 'for', 6],[385.0, 2.51, 'for', 6],[396.0, 3.18, 'for', 6],[409.0, 300, 'K', 6],[412.0, 900, 'K', 6],[476.0, 2, 'D', 7]

Se
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177258, 177258)
 Tin-chalcogenides SnX<missing VAR> (X<missing VAR>  Te, Se and S) have been arousing research interestdue to their thermoelectric physical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 2, 'D', 2],[253.0, 2, 'D', 4],[371.0, 3.81, 'for', 6],[382.0, 2.51, 'for', 6],[393.0, 3.18, 'for', 6],[406.0, 300, 'K', 6],[409.0, 900, 'K', 6],[473.0, 2, 'D', 7]

S
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177262, 177262)
 Tin-chalcogenides SnX<missing VAR> (X<missing VAR>  Te, Se and S) have been arousing research interestdue to their thermoelectric physical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, 'D', 2],[249.0, 2, 'D', 4],[367.0, 3.81, 'for', 6],[378.0, 2.51, 'for', 6],[389.0, 3.18, 'for', 6],[402.0, 300, 'K', 6],[405.0, 900, 'K', 6],[469.0, 2, 'D', 7]

Sn1
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177354, 177355)
 Generatingvariable composition of 2D Sn1-xXx systems (X<missing VAR>  Te, Se and S) hasbeen performed using global searching method based on evolutionary algorithmcombining with density functional calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'D', 0],[156.0, 2, 'D', 2],[274.0, 3.81, 'for', 4],[285.0, 2.51, 'for', 4],[296.0, 3.18, 'for', 4],[309.0, 300, 'K', 4],[312.0, 900, 'K', 4],[376.0, 2, 'D', 5]

Te
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177367, 177367)
 Generatingvariable composition of 2D Sn1-xXx systems (X<missing VAR>  Te, Se and S) hasbeen performed using global searching method based on evolutionary algorithmcombining with density functional calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'D', 0],[144.0, 2, 'D', 2],[262.0, 3.81, 'for', 4],[273.0, 2.51, 'for', 4],[284.0, 3.18, 'for', 4],[297.0, 300, 'K', 4],[300.0, 900, 'K', 4],[364.0, 2, 'D', 5]

Se
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177370, 177370)
 Generatingvariable composition of 2D Sn1-xXx systems (X<missing VAR>  Te, Se and S) hasbeen performed using global searching method based on evolutionary algorithmcombining with density functional calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'D', 0],[141.0, 2, 'D', 2],[259.0, 3.81, 'for', 4],[270.0, 2.51, 'for', 4],[281.0, 3.18, 'for', 4],[294.0, 300, 'K', 4],[297.0, 900, 'K', 4],[361.0, 2, 'D', 5]

S
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177374, 177374)
 Generatingvariable composition of 2D Sn1-xXx systems (X<missing VAR>  Te, Se and S) hasbeen performed using global searching method based on evolutionary algorithmcombining with density functional calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'D', 0],[137.0, 2, 'D', 2],[255.0, 3.81, 'for', 4],[266.0, 2.51, 'for', 4],[277.0, 3.18, 'for', 4],[290.0, 300, 'K', 4],[293.0, 900, 'K', 4],[357.0, 2, 'D', 5]

Sn
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177427, 177427)
 A new hexagonal phase named bybeta-SnX<missing VAR> is found by Universal Structure Predictor EvolutionaryXtallography (USPEX), and the structural stability has been further checked byphonon dispersion calculation and the elasticity criteria.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'D', 1],[84.0, 2, 'D', 1],[202.0, 3.81, 'for', 3],[213.0, 2.51, 'for', 3],[224.0, 3.18, 'for', 3],[237.0, 300, 'K', 3],[240.0, 900, 'K', 3],[304.0, 2, 'D', 4]

USP
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177448, 177450)
 A new hexagonal phase named bybeta-SnX<missing VAR> is found by Universal Structure Predictor EvolutionaryXtallography (USPEX), and the structural stability has been further checked byphonon dispersion calculation and the elasticity criteria.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'D', 1],[61.0, 2, 'D', 1],[179.0, 3.81, 'for', 3],[190.0, 2.51, 'for', 3],[201.0, 3.18, 'for', 3],[214.0, 300, 'K', 3],[217.0, 900, 'K', 3],[281.0, 2, 'D', 4]

SnTe
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177494, 177495)
 The beta-SnTe isthe most stable among all possible 2D phases of SnTe including thoseexperimentally available phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2, 'D', 2],[16.0, 2, 'D', 0],[134.0, 3.81, 'for', 2],[145.0, 2.51, 'for', 2],[156.0, 3.18, 'for', 2],[169.0, 300, 'K', 2],[172.0, 900, 'K', 2],[236.0, 2, 'D', 3]

SnTe
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177517, 177518)
 The beta-SnTe isthe most stable among all possible 2D phases of SnTe including thoseexperimentally available phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2, 'D', 2],[6.0, 2, 'D', 0],[111.0, 3.81, 'for', 2],[122.0, 2.51, 'for', 2],[133.0, 3.18, 'for', 2],[146.0, 300, 'K', 2],[149.0, 900, 'K', 2],[213.0, 2, 'D', 3]

SnSe
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177541, 177542)
 Further, beta phases of SnSe and SnS arealso found energetically close to the most stable phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 2, 'D', 3],[30.0, 2, 'D', 1],[87.0, 3.81, 'for', 1],[98.0, 2.51, 'for', 1],[109.0, 3.18, 'for', 1],[122.0, 300, 'K', 1],[125.0, 900, 'K', 1],[189.0, 2, 'D', 2]

SnS
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177546, 177547)
 Further, beta phases of SnSe and SnS arealso found energetically close to the most stable phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 2, 'D', 3],[35.0, 2, 'D', 1],[82.0, 3.81, 'for', 1],[93.0, 2.51, 'for', 1],[104.0, 3.18, 'for', 1],[117.0, 300, 'K', 1],[120.0, 900, 'K', 1],[184.0, 2, 'D', 2]

Sn
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177595, 177595)
 High thermoelectronic(TE) performance has been achieved in the beta-SnX<missing VAR> phases, which havedimensionless figure of merit (ZT) as high as sim0.96 to 3.81 for SnTe,sim0.93 to 2.51 for SnSe and sim1.19 to 3.18 for SnS at temperatureranging from 300 K to 900 K with practically attainable carrier concentrationof 5times1012 cm-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 2, 'D', 4],[84.0, 2, 'D', 2],[34.0, 3.81, 'for', 0],[45.0, 2.51, 'for', 0],[56.0, 3.18, 'for', 0],[69.0, 300, 'K', 0],[72.0, 900, 'K', 0],[136.0, 2, 'D', 1]

SnTe
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177631, 177632)
 High thermoelectronic(TE) performance has been achieved in the beta-SnX<missing VAR> phases, which havedimensionless figure of merit (ZT) as high as sim0.96 to 3.81 for SnTe,sim0.93 to 2.51 for SnSe and sim1.19 to 3.18 for SnS at temperatureranging from 300 K to 900 K with practically attainable carrier concentrationof 5times1012 cm-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 2, 'D', 4],[120.0, 2, 'D', 2],[2.0, 3.81, 'for', 0],[8.0, 2.51, 'for', 0],[19.0, 3.18, 'for', 0],[32.0, 300, 'K', 0],[35.0, 900, 'K', 0],[99.0, 2, 'D', 1]

SnSe
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177642, 177643)
 High thermoelectronic(TE) performance has been achieved in the beta-SnX<missing VAR> phases, which havedimensionless figure of merit (ZT) as high as sim0.96 to 3.81 for SnTe,sim0.93 to 2.51 for SnSe and sim1.19 to 3.18 for SnS at temperatureranging from 300 K to 900 K with practically attainable carrier concentrationof 5times1012 cm-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 2, 'D', 4],[131.0, 2, 'D', 2],[13.0, 3.81, 'for', 0],[2.0, 2.51, 'for', 0],[8.0, 3.18, 'for', 0],[21.0, 300, 'K', 0],[24.0, 900, 'K', 0],[88.0, 2, 'D', 1]

SnS
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177653, 177654)
 High thermoelectronic(TE) performance has been achieved in the beta-SnX<missing VAR> phases, which havedimensionless figure of merit (ZT) as high as sim0.96 to 3.81 for SnTe,sim0.93 to 2.51 for SnSe and sim1.19 to 3.18 for SnS at temperatureranging from 300 K to 900 K with practically attainable carrier concentrationof 5times1012 cm-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 2, 'D', 4],[142.0, 2, 'D', 2],[24.0, 3.81, 'for', 0],[13.0, 2.51, 'for', 0],[2.0, 3.18, 'for', 0],[10.0, 300, 'K', 0],[13.0, 900, 'K', 0],[77.0, 2, 'D', 1]

Sn
###New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials|Baojuan Dong,Zhenhai Wang,Nguyen T. Hung,Artem R. Oganov,Teng Yang,Riichiro Saito,Zhidong Zhang###
(177784, 177784)
 The high TE performance is resulted from ahigh power factor which is attributed to the quantum confinement of 2Dmaterials and the band convergence near Fermi level, as well as low thermalconductivity mainly from both low elastic constants due to weak inter-Snbonding strength and strong lattice anharmonicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 2, 'D', 5],[273.0, 2, 'D', 3],[155.0, 3.81, 'for', 1],[144.0, 2.51, 'for', 1],[133.0, 3.18, 'for', 1],[120.0, 300, 'K', 1],[117.0, 900, 'K', 1],[53.0, 2, 'D', 0]

In
###Separation of heat and charge currents for boosted thermoelectric conversion|Francesco Mazza,Stefano Valentini,Riccardo Bosisio,Giuliano Benenti,Vittorio Giovannetti,Rosario Fazio,Fabio Taddei###
(177829, 177829)
 In a multi-terminal device the (electronic) heat and charge currents canfollow different paths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Separation of heat and charge currents for boosted thermoelectric conversion|Francesco Mazza,Stefano Valentini,Riccardo Bosisio,Giuliano Benenti,Vittorio Giovannetti,Rosario Fazio,Fabio Taddei###
(177863, 177863)
 In this paper we introduce and analyse a class ofmulti-terminal devices where this property is pushed to its extreme limits,with charge and heat currents flowing in different reservoirs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Critical mode and band-gap-controlled bipolar thermoelectric properties of SnSe|I. Loa,S. R. Popuri,A. D. Fortes,J. W. G. Bos###
(178221, 178222)
Critical mode and band-gap-controlled bipolar thermoelectric properties of SnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 4, 'and', 2],[86.0, 1000, 'K', 2],[182.0, 800, 'K', 3],[294.0, 700, 'and', 4],[295.0, 800, 'K', 4]

SnSe
###Critical mode and band-gap-controlled bipolar thermoelectric properties of SnSe|I. Loa,S. R. Popuri,A. D. Fortes,J. W. G. Bos###
(178302, 178303)
Here, we have reinvestigated the crystal structure of the high-zTthermoelectric material tin selenide, SnSe, between 4 and 1000 K usinghigh-resolution neutron powder diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4, 'and', 0],[5.0, 1000, 'K', 0],[101.0, 800, 'K', 1],[213.0, 700, 'and', 2],[214.0, 800, 'K', 2]

K
###Critical mode and band-gap-controlled bipolar thermoelectric properties of SnSe|I. Loa,S. R. Popuri,A. D. Fortes,J. W. G. Bos###
(178386, 178386)
 Symmetry analysis reveals thepresence of four active structural distortion modes, one of which is found tobe active over a relatively wide range of more than +/-200 K around thesymmetry-breaking Pnma-Cmcm transition at 800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 4, 'and', 1],[78.0, 1000, 'K', 1],[18.0, 800, 'K', 0],[130.0, 700, 'and', 1],[131.0, 800, 'K', 1]

SnSe
###Critical mode and band-gap-controlled bipolar thermoelectric properties of SnSe|I. Loa,S. R. Popuri,A. D. Fortes,J. W. G. Bos###
(178463, 178464)
 Density functional theorycalculations on the basis of the experimental structure parameters show thatthe unusual, step-like temperature dependencies of the electrical transportproperties of SnSe are caused by the onset of intrinsic bipolar conductivity,amplified and shifted to lower temperatures by a rapid reduction of the bandgap between 700 and 800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 4, 'and', 2],[155.0, 1000, 'K', 2],[59.0, 800, 'K', 1],[52.0, 700, 'and', 0],[53.0, 800, 'K', 0]

Sn
###Critical mode and band-gap-controlled bipolar thermoelectric properties of SnSe|I. Loa,S. R. Popuri,A. D. Fortes,J. W. G. Bos###
(178545, 178545)
 The calculated band gap is highly sensitive to smallout-of-plane Sn displacements observed in the diffraction experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 4, 'and', 3],[237.0, 1000, 'K', 3],[141.0, 800, 'K', 2],[29.0, 700, 'and', 1],[28.0, 800, 'K', 1]

SnSe
###Critical mode and band-gap-controlled bipolar thermoelectric properties of SnSe|I. Loa,S. R. Popuri,A. D. Fortes,J. W. G. Bos###
(178560, 178561)
 SnSewith a sufficiently controlled acceptor concentration is predicted to producesimultaneously a large positive and a large negative Seebeck effect alongdifferent crystal directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 4, 'and', 4],[252.0, 1000, 'K', 4],[156.0, 800, 'K', 3],[44.0, 700, 'and', 2],[43.0, 800, 'K', 2]

CuAlO2
###The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)|Evan Witkoske,Zhen Tong,Yining Feng,Xiulin Ruan,Mark Lundstrom,Na Lu###
(178660, 178663)
The use of strain and grain boundaries to tailor phonon transport properties A first principles study of 2H-phase CuAlO2 (Part II).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'H', 0],[193.0, 2, 'H', 4],[255.0, 32, 'W', 5],[302.0, 3, 'nm', 5],[306.0, 30, 'nm', 5]

I
###The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)|Evan Witkoske,Zhen Tong,Yining Feng,Xiulin Ruan,Mark Lundstrom,Na Lu###
(178669, 178669)
The use of strain and grain boundaries to tailor phonon transport properties A first principles study of 2H-phase CuAlO2 (Part II).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'H', 0],[187.0, 2, 'H', 4],[249.0, 32, 'W', 5],[296.0, 3, 'nm', 5],[300.0, 30, 'nm', 5]

CuAlO2
###The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)|Evan Witkoske,Zhen Tong,Yining Feng,Xiulin Ruan,Mark Lundstrom,Na Lu###
(178684, 178687)
 Transparent oxide materials, such as CuAlO2, a p<missing VAR>-type transparentconducting oxide (T<missing VAR>CO), have recently been studied for high temperaturethermoelectric power generators and coolers for waste heat.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'H', 1],[169.0, 2, 'H', 3],[231.0, 32, 'W', 4],[278.0, 3, 'nm', 4],[282.0, 30, 'nm', 4]

O
###The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)|Evan Witkoske,Zhen Tong,Yining Feng,Xiulin Ruan,Mark Lundstrom,Na Lu###
(178706, 178706)
 Transparent oxide materials, such as CuAlO2, a p<missing VAR>-type transparentconducting oxide (T<missing VAR>CO), have recently been studied for high temperaturethermoelectric power generators and coolers for waste heat.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 2, 'H', 1],[150.0, 2, 'H', 3],[212.0, 32, 'W', 4],[259.0, 3, 'nm', 4],[263.0, 30, 'nm', 4]

CO
###The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)|Evan Witkoske,Zhen Tong,Yining Feng,Xiulin Ruan,Mark Lundstrom,Na Lu###
(178743, 178744)
 T<missing VAR>CO materials aregenerally low cost and non-toxic.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2, 'H', 2],[112.0, 2, 'H', 2],[174.0, 32, 'W', 3],[221.0, 3, 'nm', 3],[225.0, 30, 'nm', 3]

W
###The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)|Evan Witkoske,Zhen Tong,Yining Feng,Xiulin Ruan,Mark Lundstrom,Na Lu###
(178828, 178828)
 The potential to engineer them through strainand nano-structuring are two promising avenues toward continuously tuning theelectronic and thermal properties to achieve high zT values and low cost/k<missing VAR>W-hrdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2, 'H', 3],[28.0, 2, 'H', 1],[90.0, 32, 'W', 2],[137.0, 3, 'nm', 2],[141.0, 30, 'nm', 2]

In
###The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)|Evan Witkoske,Zhen Tong,Yining Feng,Xiulin Ruan,Mark Lundstrom,Na Lu###
(178836, 178836)
 In this work, the strain-dependent lattice thermal conductivity of 2HCuAlO2 is computed by solving the phonon Boltzmann transport equation withinteratomic force constants extracted from first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 2, 'H', 4],[20.0, 2, 'H', 0],[82.0, 32, 'W', 1],[129.0, 3, 'nm', 1],[133.0, 30, 'nm', 1]

CuAlO2
###The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)|Evan Witkoske,Zhen Tong,Yining Feng,Xiulin Ruan,Mark Lundstrom,Na Lu###
(178859, 178862)
 In this work, the strain-dependent lattice thermal conductivity of 2HCuAlO2 is computed by solving the phonon Boltzmann transport equation withinteratomic force constants extracted from first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2, 'H', 4],[3.0, 2, 'H', 0],[56.0, 32, 'W', 1],[103.0, 3, 'nm', 1],[107.0, 30, 'nm', 1]

K
###The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)|Evan Witkoske,Zhen Tong,Yining Feng,Xiulin Ruan,Mark Lundstrom,Na Lu###
(178921, 178921)
 Whilethe average bulk thermal conductivity is around 32 W/(K-m) at room temperature,it drops to between 5-15 W/(K-m) for typical experimental grain sizes from 3nmto 30nm at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 2, 'H', 5],[65.0, 2, 'H', 1],[3.0, 32, 'W', 0],[44.0, 3, 'nm', 0],[48.0, 30, 'nm', 0]

K
###The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)|Evan Witkoske,Zhen Tong,Yining Feng,Xiulin Ruan,Mark Lundstrom,Na Lu###
(178949, 178949)
 Whilethe average bulk thermal conductivity is around 32 W/(K-m) at room temperature,it drops to between 5-15 W/(K-m) for typical experimental grain sizes from 3nmto 30nm at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 2, 'H', 5],[93.0, 2, 'H', 1],[31.0, 32, 'W', 0],[16.0, 3, 'nm', 0],[20.0, 30, 'nm', 0]

(S)
###Thermoelectric transport properties in graphene connected molecular junctions|S. T. Rodriguez,I. Grosu,M. Crisan,I. Tifrea###
(179155, 179157)
 The system electrical conductivity (G), Seebeck coefficient(S), and the thermal conductivity (kappa), are numerically calculatedbased on a Greens<missing VAR> function formalism that includes contributions up to theHartree-Fock level.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermoelectric transport properties in graphene connected molecular junctions|S. T. Rodriguez,I. Grosu,M. Crisan,I. Tifrea###
(179299, 179299)
 In all cases, the Fano effect isresponsible for a strong violation of the Wiedemann-Franz law and we found asubstantial increase of the system figure of merit ZT due to a drasticreduction of the system thermal coefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermoelectric transport properties in graphene connected molecular junctions|S. T. Rodriguez,I. Grosu,M. Crisan,I. Tifrea###
(179385, 179385)
 In the case of gapped-grapheneelectrodes, the system figure of merit presents a maximum at an optimal valueof the energy gap of the order of Delta/D<missing VAR>sim 0.002 (massive gap scenario)and Delta/D<missing VAR>sim 0.0026 (massless gap scenario).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbTe
###A sharp increase in the density of states in PbTe approaching a saddle point in the band structure|P. Walmsley,D. M. Abrams,J. Straquadine,M. K. Chan,R. D. McDonald,P. Giraldo-Gallo,I. R. Fisher###
(179530, 179531)
A sharp increase in the density of states in PbTe approaching a saddle point in the band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 180, 'meV', 3]

PbTe
###A sharp increase in the density of states in PbTe approaching a saddle point in the band structure|P. Walmsley,D. M. Abrams,J. Straquadine,M. K. Chan,R. D. McDonald,P. Giraldo-Gallo,I. R. Fisher###
(179550, 179551)
 PbTe is a leading mid-range thermoelectric material with a zT that has beenenhanced by, amongst other methods, band engineering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 180, 'meV', 2]

PbTe
###A sharp increase in the density of states in PbTe approaching a saddle point in the band structure|P. Walmsley,D. M. Abrams,J. Straquadine,M. K. Chan,R. D. McDonald,P. Giraldo-Gallo,I. R. Fisher###
(179658, 179659)
 Here we present anexperimental study of the Hall effect, quantum oscillations, specific heat, andelectron microprobe analysis that explores the evolution of the electronicstructure of PbTe heavily doped with the ideal acceptor Na up to thesolubility limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 180, 'meV', 1]

Na
###A sharp increase in the density of states in PbTe approaching a saddle point in the band structure|P. Walmsley,D. M. Abrams,J. Straquadine,M. K. Chan,R. D. McDonald,P. Giraldo-Gallo,I. R. Fisher###
(179673, 179673)
 Here we present anexperimental study of the Hall effect, quantum oscillations, specific heat, andelectron microprobe analysis that explores the evolution of the electronicstructure of PbTe heavily doped with the ideal acceptor Na up to thesolubility limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 180, 'meV', 1]

PbTe
###A sharp increase in the density of states in PbTe approaching a saddle point in the band structure|P. Walmsley,D. M. Abrams,J. Straquadine,M. K. Chan,R. D. McDonald,P. Giraldo-Gallo,I. R. Fisher###
(179955, 179956)
 Comparison to densityfunctional theory calculations imply that this evolution of the electronicstructure may be a key contributor to the large thermopower in PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 180, 'meV', 2]

MnBi2Te4
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(179981, 179985)
Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 3, 'D', 1],[322.0, 24, 'K', 6]

MnBi2Te4
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(179994, 179998)
 Crystal growth of MnBi2Te4 has delivered the first experimentalcorroboration of the 3D antiferromagnetic topological insulator state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 3, 'D', 0],[309.0, 24, 'K', 5]

MnBi2Te4
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(180044, 180048)
 Ourpresent results confirm that the synthesis of MnBi2Te4 can bescaled-up and strengthen it as a promising experimental platform for studies ofa crossover between magnetic ordering and non-trivial topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 3, 'D', 1],[259.0, 24, 'K', 4]

MnBi2Te4
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(180112, 180116)
 High-qualitysingle crystals of MnBi2Te4 are grown by slow cooling within a narrowrange between the melting points of Bi2Te3 (586 degC) andMnBi2Te4 (600 degC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 3, 'D', 2],[191.0, 24, 'K', 3]

Bi2Te3
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(180147, 180150)
 High-qualitysingle crystals of MnBi2Te4 are grown by slow cooling within a narrowrange between the melting points of Bi2Te3 (586 degC) andMnBi2Te4 (600 degC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 3, 'D', 2],[157.0, 24, 'K', 3]

C
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(180156, 180156)
 High-qualitysingle crystals of MnBi2Te4 are grown by slow cooling within a narrowrange between the melting points of Bi2Te3 (586 degC) andMnBi2Te4 (600 degC).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 3, 'D', 2],[151.0, 24, 'K', 3]

MnBi2Te4
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(180162, 180166)
 High-qualitysingle crystals of MnBi2Te4 are grown by slow cooling within a narrowrange between the melting points of Bi2Te3 (586 degC) andMnBi2Te4 (600 degC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 3, 'D', 2],[141.0, 24, 'K', 3]

C
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(180172, 180172)
 High-qualitysingle crystals of MnBi2Te4 are grown by slow cooling within a narrowrange between the melting points of Bi2Te3 (586 degC) andMnBi2Te4 (600 degC).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 3, 'D', 2],[135.0, 24, 'K', 3]

Mn
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(180216, 180216)
 Single crystal X<missing VAR>-ray diffraction and electronmicroscopy reveal ubiquitous antisite defects in both cation sites and,possibly, Mn vacancies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 3, 'D', 3],[91.0, 24, 'K', 2]

MnBi2Te4
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(180225, 180229)
 Powders of MnBi2Te4 can be obtained atsubsolidus temperatures, and a complementary thermochemical study establishes alimited high-temperature range of phase stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 3, 'D', 4],[78.0, 24, 'K', 1]

Mn(II)
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(180314, 180318)
 The expected Mn(II) out-of-plane magnetic state isconfirmed by the magnetization, X<missing VAR>-ray photoemission, X<missing VAR>-ray absorption andlinear dichroism data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 3, 'D', 6],[7.0, 24, 'K', 1]

MnBi2Te4
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(180365, 180369)
 MnBi2Te4 exhibits a metallic type ofresistivity in the range 4.5-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 3, 'D', 7],[58.0, 24, 'K', 2]

K
###Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$|Alexander Zeugner,Frederik Nietschke,Anja U. B. Wolter,Sebastian Gaß,Raphael C. Vidal,Thiago R. F. Peixoto,Darius Pohl,Christine Damm,Axel Lubk,Richard Hentrich,Simon K. Moser,Celso Fornari,Chul Hee Min,Sonja Schatz,Katharina Kißner,Maximilian Ünzelmann,Martin Kaiser,Francesco Scaravaggi,Bernd Rellinghaus,Kornelius Nielsch,Christian Heß,Bernd Büchner,Friedrich Reinert,Hendrik Bentmann,Oliver Oeckler,Thomas Doert,Michael Ruck,Anna Isaeva###
(180394, 180394)
 MnBi2Te4 exhibits a metallic type ofresistivity in the range 4.5-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 3, 'D', 7],[87.0, 24, 'K', 2]

K
###Efficient and tunable Aharonov-Bohm quantum heat engine|Géraldine Haack,Francesco Giazotto###
(180570, 180570)
 Sizeable thermopower (up to sim 0.3,textm<missing VAR>V/K) aswell as ZT values largely exceeding unity can be achieved by simply adjustingparameters of the setup and temperature bias across the interferometer leadingto thermal efficiency at maximum power approaching 30% of the Carnot limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.3, ',', 0],[71.0, 30, '%', 0]

B
###Efficient and tunable Aharonov-Bohm quantum heat engine|Géraldine Haack,Francesco Giazotto###
(180751, 180751)
 Changing the magnetic flux, the asymmetry of thestructure, a side-gate bias voltage through a capacitively-coupled electrodeand the transmission of the T<missing VAR>-junctions connecting the AB ring to the contactsallows to finely tune the operation of the quantum heat engine.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 0.3, ',', 2],[110.0, 30, '%', 2]

SiTe2
###Ultralow lattice thermal conductivity and electronic properties of monolayer 1T phase semimetal SiTe2 and SnTe2|Yi Wang,Zhibin Gao,Jun Zhou###
(180898, 180900)
Ultralow lattice thermal conductivity and electronic properties of monolayer 1T phase semimetal SiTe2 and SnTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1, 'T', 0],[8.0, 2, 'H', 1],[97.0, 2, 'H', 2],[153.0, 1, 'T', 3],[231.0, 1, 'T', 4],[331.0, 1.62, 'W', 6],[395.0, 0.46, 'at', 7],[396.0, 600, 'K', 7],[399.0, 0.71, 'at', 7]

SnTe2
###Ultralow lattice thermal conductivity and electronic properties of monolayer 1T phase semimetal SiTe2 and SnTe2|Yi Wang,Zhibin Gao,Jun Zhou###
(180904, 180906)
Ultralow lattice thermal conductivity and electronic properties of monolayer 1T phase semimetal SiTe2 and SnTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1, 'T', 0],[2.0, 2, 'H', 1],[91.0, 2, 'H', 2],[147.0, 1, 'T', 3],[225.0, 1, 'T', 4],[325.0, 1.62, 'W', 6],[389.0, 0.46, 'at', 7],[390.0, 600, 'K', 7],[393.0, 0.71, 'at', 7]

Ds
###Ultralow lattice thermal conductivity and electronic properties of monolayer 1T phase semimetal SiTe2 and SnTe2|Yi Wang,Zhibin Gao,Jun Zhou###
(180945, 180945)
 2H phase (trigonal prismatic D3h) of layered two-dimensional (2D) transitionmetal dichalcogenides (TMDs) have attracted a lot of interests due to thesuperior electronic and optoelectronic properties.
EXCEPTION 3: IndexError for Ds
SnTe2
[53.0, 1, 'T', 1],[37.0, 2, 'H', 0],[52.0, 2, 'H', 1],[108.0, 1, 'T', 2],[186.0, 1, 'T', 3],[286.0, 1.62, 'W', 5],[350.0, 0.46, 'at', 6],[351.0, 600, 'K', 6],[354.0, 0.71, 'at', 6]

PbTeCr
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181343, 181345)
Magnetic Constitution of Topologically Trivial Thermoelectric PbTeCr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 100, 'meV', 5]

In
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181348, 181348)
 In this paper we report on detailed temperature and magnetic field dependenceof m<missing VAR> agnetization of IV-VI semiconductor PbTe doped with mixed valencetransition metal Cr2+/3+.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 100, 'meV', 4]

IV
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181381, 181382)
 In this paper we report on detailed temperature and magnetic field dependenceof m<missing VAR> agnetization of IV-VI semiconductor PbTe doped with mixed valencetransition metal Cr2+/3+.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 100, 'meV', 4]

VI
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181384, 181385)
 In this paper we report on detailed temperature and magnetic field dependenceof m<missing VAR> agnetization of IV-VI semiconductor PbTe doped with mixed valencetransition metal Cr2+/3+.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 100, 'meV', 4]

PbTe
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181389, 181390)
 In this paper we report on detailed temperature and magnetic field dependenceof m<missing VAR> agnetization of IV-VI semiconductor PbTe doped with mixed valencetransition metal Cr2+/3+.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 100, 'meV', 4]

Cr
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181476, 181476)
 The material is studied solely by an integralsuperconducting quantum interference device magnetometer in order toquantitatively determine the contribution of single substitutional Cr3+ aswell as of various Cr-Te magnetic nanocrystals, including their identification.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 100, 'meV', 3]

Te
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181478, 181478)
 The material is studied solely by an integralsuperconducting quantum interference device magnetometer in order toquantitatively determine the contribution of single substitutional Cr3+ aswell as of various Cr-Te magnetic nanocrystals, including their identification.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 100, 'meV', 3]

PbTeCr
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181627, 181629)
 The magnetic finding excellentlyagrees with previous Hall effect studies thus providing a new experimentalsupport for the proposed electronic structure model of PbTeCr system withresonant Cr2+/3+ state located (at low temperatures) about 100 meV abovethe bottom of the conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 100, 'meV', 0]

Cr
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181701, 181701)
 Below room temperature a ferromagnetic-likesignal points to the presence of Cr-rich nanocrystalline precipitates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 100, 'meV', 1]

Cr2Te3
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181722, 181725)
 Two mostlikely candidates, namely Cr2Te3 and Cr5Te8 are identified upondedicated temperature cycling of the sample at the remnant state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 100, 'meV', 2]

Cr5Te8
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181729, 181732)
 Two mostlikely candidates, namely Cr2Te3 and Cr5Te8 are identified upondedicated temperature cycling of the sample at the remnant state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 100, 'meV', 2]

As
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181762, 181762)
 As anensemble, the nanocrystals exhibits (blocked) superparamagnetic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 100, 'meV', 3]

PbTe
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181805, 181806)
 Themagnetic susceptibility of both n<missing VAR>- and p<missing VAR>-type PbTe in the temperature range100 < T<missing VAR> < 400K has been established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 100, 'meV', 4]

K
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181826, 181826)
 Themagnetic susceptibility of both n<missing VAR>- and p<missing VAR>-type PbTe in the temperature range100 < T<missing VAR> < 400K has been established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 100, 'meV', 4]

PbTeCr
###Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr|Katarzyna Gas,Aleksandra Krolicka,Krzysztof Dybko,Piotr Nowicki,Zeinab Khosravizadeh,Tomasz Story,Maciej Sawicki###
(181864, 181866)
 These magnitudes are essential inproper accounting for the high temperature magnetic susceptibility of PbTeCr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 100, 'meV', 5]

Rh3In3.4Ge3.6
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(181895, 181900)
Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 12, 'd', 2],[99.0, 16, 'f', 2],[195.0, 2, 'mW', 3],[210.0, 225, 'K', 3],[231.0, 8, 'x', 3],[234.0, -4, ',', 3]

Rh3In3.4Ge3.6
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(181934, 181939)
 We report the synthesis via an indium flux method of a novelsingle-crystalline compound Rh3In3.4Ge3.6 that belongs to the cubic Ir3Ge7structure type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 12, 'd', 1],[60.0, 16, 'f', 1],[156.0, 2, 'mW', 2],[171.0, 225, 'K', 2],[192.0, 8, 'x', 2],[195.0, -4, ',', 2]

Ir3Ge7
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(181951, 181954)
 We report the synthesis via an indium flux method of a novelsingle-crystalline compound Rh3In3.4Ge3.6 that belongs to the cubic Ir3Ge7structure type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 12, 'd', 1],[45.0, 16, 'f', 1],[141.0, 2, 'mW', 2],[156.0, 225, 'K', 2],[177.0, 8, 'x', 2],[180.0, -4, ',', 2]

In
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(181962, 181962)
 In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentiallyoccupy, respectively, the 12d and 16f sites of the Im-3m<missing VAR> space group, thuscreating a colored version of the Ir3Ge7 structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 12, 'd', 0],[37.0, 16, 'f', 0],[133.0, 2, 'mW', 1],[148.0, 225, 'K', 1],[169.0, 8, 'x', 1],[172.0, -4, ',', 1]

Rh3In3.4Ge3.6
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(181964, 181969)
 In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentiallyoccupy, respectively, the 12d and 16f sites of the Im-3m<missing VAR> space group, thuscreating a colored version of the Ir3Ge7 structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 12, 'd', 0],[30.0, 16, 'f', 0],[126.0, 2, 'mW', 1],[141.0, 225, 'K', 1],[162.0, 8, 'x', 1],[165.0, -4, ',', 1]

In
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(181974, 181974)
 In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentiallyoccupy, respectively, the 12d and 16f sites of the Im-3m<missing VAR> space group, thuscreating a colored version of the Ir3Ge7 structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 12, 'd', 0],[25.0, 16, 'f', 0],[121.0, 2, 'mW', 1],[136.0, 225, 'K', 1],[157.0, 8, 'x', 1],[160.0, -4, ',', 1]

Ge
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(181978, 181978)
 In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentiallyoccupy, respectively, the 12d and 16f sites of the Im-3m<missing VAR> space group, thuscreating a colored version of the Ir3Ge7 structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 12, 'd', 0],[21.0, 16, 'f', 0],[117.0, 2, 'mW', 1],[132.0, 225, 'K', 1],[153.0, 8, 'x', 1],[156.0, -4, ',', 1]

Ir3Ge7
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(182032, 182035)
 In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentiallyoccupy, respectively, the 12d and 16f sites of the Im-3m<missing VAR> space group, thuscreating a colored version of the Ir3Ge7 structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 12, 'd', 0],[33.0, 16, 'f', 0],[60.0, 2, 'mW', 1],[75.0, 225, 'K', 1],[96.0, 8, 'x', 1],[99.0, -4, ',', 1]

Ir3Ge7
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(182053, 182056)
 Like the other compounds ofthe Ir3Ge7 family, Rh3In3.4Ge3.6 shows potential as a thermoelectric displayinga relatively large power factor, PF  2 mW/cmK2, at a temperature T<missing VAR>  225 Kalbeit showing a modest figure of merit, ZT  8 x 10-4, due to the lack of afinite band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 12, 'd', 1],[54.0, 16, 'f', 1],[39.0, 2, 'mW', 0],[54.0, 225, 'K', 0],[75.0, 8, 'x', 0],[78.0, -4, ',', 0]

Rh3In3.4Ge3.6
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(182061, 182066)
 Like the other compounds ofthe Ir3Ge7 family, Rh3In3.4Ge3.6 shows potential as a thermoelectric displayinga relatively large power factor, PF  2 mW/cmK2, at a temperature T<missing VAR>  225 Kalbeit showing a modest figure of merit, ZT  8 x 10-4, due to the lack of afinite band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 12, 'd', 1],[62.0, 16, 'f', 1],[29.0, 2, 'mW', 0],[44.0, 225, 'K', 0],[65.0, 8, 'x', 0],[68.0, -4, ',', 0]

PF
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(182092, 182093)
 Like the other compounds ofthe Ir3Ge7 family, Rh3In3.4Ge3.6 shows potential as a thermoelectric displayinga relatively large power factor, PF  2 mW/cmK2, at a temperature T<missing VAR>  225 Kalbeit showing a modest figure of merit, ZT  8 x 10-4, due to the lack of afinite band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 12, 'd', 1],[93.0, 16, 'f', 1],[2.0, 2, 'mW', 0],[17.0, 225, 'K', 0],[38.0, 8, 'x', 0],[41.0, -4, ',', 0]

K2
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(182098, 182099)
 Like the other compounds ofthe Ir3Ge7 family, Rh3In3.4Ge3.6 shows potential as a thermoelectric displayinga relatively large power factor, PF  2 mW/cmK2, at a temperature T<missing VAR>  225 Kalbeit showing a modest figure of merit, ZT  8 x 10-4, due to the lack of afinite band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 12, 'd', 1],[99.0, 16, 'f', 1],[3.0, 2, 'mW', 0],[11.0, 225, 'K', 0],[32.0, 8, 'x', 0],[35.0, -4, ',', 0]

I
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(182259, 182259)
 Theelectronic structure is composed of several Dirac type-I and type-II nodes, andeven Dirac type-III nodes that result from the touching between a flat band anda linearly dispersing band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 12, 'd', 4],[260.0, 16, 'f', 4],[164.0, 2, 'mW', 3],[149.0, 225, 'K', 3],[128.0, 8, 'x', 3],[125.0, -4, ',', 3]

II
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(182265, 182266)
 Theelectronic structure is composed of several Dirac type-I and type-II nodes, andeven Dirac type-III nodes that result from the touching between a flat band anda linearly dispersing band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 12, 'd', 4],[266.0, 16, 'f', 4],[170.0, 2, 'mW', 3],[155.0, 225, 'K', 3],[134.0, 8, 'x', 3],[131.0, -4, ',', 3]

III
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(182280, 182282)
 Theelectronic structure is composed of several Dirac type-I and type-II nodes, andeven Dirac type-III nodes that result from the touching between a flat band anda linearly dispersing band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 12, 'd', 4],[281.0, 16, 'f', 4],[185.0, 2, 'mW', 3],[170.0, 225, 'K', 3],[149.0, 8, 'x', 3],[146.0, -4, ',', 3]

III
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(182343, 182345)
 This rich Dirac-like electronic dispersion offersthe possibility to observe Dirac type-III nodes and study their role in thephysical properties of Rh3In3.4Ge3.6 and related Ir3Ge7-type materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 12, 'd', 5],[344.0, 16, 'f', 5],[248.0, 2, 'mW', 4],[233.0, 225, 'K', 4],[212.0, 8, 'x', 4],[209.0, -4, ',', 4]

Rh3In3.4Ge3.6
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(182368, 182373)
 This rich Dirac-like electronic dispersion offersthe possibility to observe Dirac type-III nodes and study their role in thephysical properties of Rh3In3.4Ge3.6 and related Ir3Ge7-type materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, 12, 'd', 5],[369.0, 16, 'f', 5],[273.0, 2, 'mW', 4],[258.0, 225, 'K', 4],[237.0, 8, 'x', 4],[234.0, -4, ',', 4]

Ir3Ge7
###Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6|Aikaterini Flessa Savvidou,Judith K. Clark,Hua Wang,Kaya Wei,Eun Sang Choi,Shirin Mozaffari,Xiaofeng Qian,Michael Shatruk,Luis Balicas###
(182379, 182382)
 This rich Dirac-like electronic dispersion offersthe possibility to observe Dirac type-III nodes and study their role in thephysical properties of Rh3In3.4Ge3.6 and related Ir3Ge7-type materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 12, 'd', 5],[380.0, 16, 'f', 5],[284.0, 2, 'mW', 4],[269.0, 225, 'K', 4],[248.0, 8, 'x', 4],[245.0, -4, ',', 4]

Sb
###Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal|K. Malik,S. Mahakal,Diptasikha Das,Aritra Banerjee,S. Chatterjee,Anusree Das###
(182397, 182397)
Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 0.6, ',', 1],[50.0, 0.65, ',', 1],[53.0, 0.68, ',', 1],[56.0, 0.7, ',', 1],[58.0, 0.75, 'and', 1],[153.0, 0.7, ',', 4]

Bi1-x
###Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal|K. Malik,S. Mahakal,Diptasikha Das,Aritra Banerjee,S. Chatterjee,Anusree Das###
(182416, 182419)
Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[25.0, 0.6, ',', 1],[28.0, 0.65, ',', 1],[31.0, 0.68, ',', 1],[34.0, 0.7, ',', 1],[36.0, 0.75, 'and', 1],[131.0, 0.7, ',', 4]

Te3
###Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal|K. Malik,S. Mahakal,Diptasikha Das,Aritra Banerjee,S. Chatterjee,Anusree Das###
(182423, 182424)
Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.6, ',', 1],[23.0, 0.65, ',', 1],[26.0, 0.68, ',', 1],[29.0, 0.7, ',', 1],[31.0, 0.75, 'and', 1],[126.0, 0.7, ',', 4]

Bi1-x
###Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal|K. Malik,S. Mahakal,Diptasikha Das,Aritra Banerjee,S. Chatterjee,Anusree Das###
(182432, 182435)
 (Bi1-xSbx)2Te3 (x<missing VAR>0.60, 0.65, 0.68, 0.70, 0.75 and 0.80) mixed crystals havebeen synthesized by solid state reaction.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[9.0, 0.6, ',', 0],[12.0, 0.65, ',', 0],[15.0, 0.68, ',', 0],[18.0, 0.7, ',', 0],[20.0, 0.75, 'and', 0],[115.0, 0.7, ',', 3]

Te3
###Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal|K. Malik,S. Mahakal,Diptasikha Das,Aritra Banerjee,S. Chatterjee,Anusree Das###
(182439, 182440)
 (Bi1-xSbx)2Te3 (x<missing VAR>0.60, 0.65, 0.68, 0.70, 0.75 and 0.80) mixed crystals havebeen synthesized by solid state reaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.6, ',', 0],[7.0, 0.65, ',', 0],[10.0, 0.68, ',', 0],[13.0, 0.7, ',', 0],[15.0, 0.75, 'and', 0],[110.0, 0.7, ',', 3]

In
###Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal|K. Malik,S. Mahakal,Diptasikha Das,Aritra Banerjee,S. Chatterjee,Anusree Das###
(182480, 182480)
 In depth structural, thermal,transport and electronic properties are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.6, ',', 1],[33.0, 0.65, ',', 1],[30.0, 0.68, ',', 1],[27.0, 0.7, ',', 1],[25.0, 0.75, 'and', 1],[70.0, 0.7, ',', 2]

C
###Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal|K. Malik,S. Mahakal,Diptasikha Das,Aritra Banerjee,S. Chatterjee,Anusree Das###
(182607, 182607)
 Differential scanning calorimetry(D<missing VAR>SC) data confirms the glass transition in the material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0.6, ',', 5],[160.0, 0.65, ',', 5],[157.0, 0.68, ',', 5],[154.0, 0.7, ',', 5],[152.0, 0.75, 'and', 5],[57.0, 0.7, ',', 2]

S
###Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal|K. Malik,S. Mahakal,Diptasikha Das,Aritra Banerjee,S. Chatterjee,Anusree Das###
(182704, 182704)
 Both Hall measurement andtemperature dependent thermopower data (S(T)) confirms that samples are p<missing VAR>-typein nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 0.6, ',', 8],[257.0, 0.65, ',', 8],[254.0, 0.68, ',', 8],[251.0, 0.7, ',', 8],[249.0, 0.75, 'and', 8],[154.0, 0.7, ',', 5]

S
###Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal|K. Malik,S. Mahakal,Diptasikha Das,Aritra Banerjee,S. Chatterjee,Anusree Das###
(182813, 182813)
 Figure of Merit (ZT) of thesynthesized samples are calculated using resistivity, S(T) and k<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 0.6, ',', 11],[366.0, 0.65, ',', 11],[363.0, 0.68, ',', 11],[360.0, 0.7, ',', 11],[358.0, 0.75, 'and', 11],[263.0, 0.7, ',', 8]

Bi4GeTe7
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(182907, 182911)
Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 0.42, 'Wm', 2],[186.0, 135, 'K', 2],[219.0, 82, 'uV', 3],[244.0, 9.8, 'x', 3],[245.0, 1019, 'cm', 3],[250.0, 300, 'K', 3],[407.0, 0.24, ',', 6],[411.0, 380, 'K', 6]

Bi4GeTe7
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(182998, 183002)
 We are reporting that layered Bi4GeTe7, withalternating quintuplet-septuplet layers of Bi2Te3 and Bi2GeTe4, has an ultralowthermal conductivity, k<missing VAR>appatotal 0.42 Wm-1K-1 because of high degree ofanharmonicity as estimated from large Gruneisen parameter (gamma 4.07) andlow Debye temperature (thetad<missing VAR> 135 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0.42, 'Wm', 0],[95.0, 135, 'K', 0],[128.0, 82, 'uV', 1],[153.0, 9.8, 'x', 1],[154.0, 1019, 'cm', 1],[159.0, 300, 'K', 1],[316.0, 0.24, ',', 4],[320.0, 380, 'K', 4]

Bi2Te3
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183018, 183021)
 We are reporting that layered Bi4GeTe7, withalternating quintuplet-septuplet layers of Bi2Te3 and Bi2GeTe4, has an ultralowthermal conductivity, k<missing VAR>appatotal 0.42 Wm-1K-1 because of high degree ofanharmonicity as estimated from large Gruneisen parameter (gamma 4.07) andlow Debye temperature (thetad<missing VAR> 135 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.42, 'Wm', 0],[76.0, 135, 'K', 0],[109.0, 82, 'uV', 1],[134.0, 9.8, 'x', 1],[135.0, 1019, 'cm', 1],[140.0, 300, 'K', 1],[297.0, 0.24, ',', 4],[301.0, 380, 'K', 4]

Bi2GeTe4
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183025, 183029)
 We are reporting that layered Bi4GeTe7, withalternating quintuplet-septuplet layers of Bi2Te3 and Bi2GeTe4, has an ultralowthermal conductivity, k<missing VAR>appatotal 0.42 Wm-1K-1 because of high degree ofanharmonicity as estimated from large Gruneisen parameter (gamma 4.07) andlow Debye temperature (thetad<missing VAR> 135 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.42, 'Wm', 0],[68.0, 135, 'K', 0],[101.0, 82, 'uV', 1],[126.0, 9.8, 'x', 1],[127.0, 1019, 'cm', 1],[132.0, 300, 'K', 1],[289.0, 0.24, ',', 4],[293.0, 380, 'K', 4]

K
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183050, 183050)
 We are reporting that layered Bi4GeTe7, withalternating quintuplet-septuplet layers of Bi2Te3 and Bi2GeTe4, has an ultralowthermal conductivity, k<missing VAR>appatotal 0.42 Wm-1K-1 because of high degree ofanharmonicity as estimated from large Gruneisen parameter (gamma 4.07) andlow Debye temperature (thetad<missing VAR> 135 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.42, 'Wm', 0],[47.0, 135, 'K', 0],[80.0, 82, 'uV', 1],[105.0, 9.8, 'x', 1],[106.0, 1019, 'cm', 1],[111.0, 300, 'K', 1],[268.0, 0.24, ',', 4],[272.0, 380, 'K', 4]

S
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183127, 183127)
 The electron dominated chargetransport has been realized from the Seebeck coefficient, S - 82 uV/K, at 380K, and Hall carrier concentration of ne  9.8 x 1019 cm-3 at 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.42, 'Wm', 1],[30.0, 135, 'K', 1],[3.0, 82, 'uV', 0],[28.0, 9.8, 'x', 0],[29.0, 1019, 'cm', 0],[34.0, 300, 'K', 0],[191.0, 0.24, ',', 3],[195.0, 380, 'K', 3]

K
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183132, 183132)
 The electron dominated chargetransport has been realized from the Seebeck coefficient, S - 82 uV/K, at 380K, and Hall carrier concentration of ne  9.8 x 1019 cm-3 at 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0.42, 'Wm', 1],[35.0, 135, 'K', 1],[2.0, 82, 'uV', 0],[23.0, 9.8, 'x', 0],[24.0, 1019, 'cm', 0],[29.0, 300, 'K', 0],[186.0, 0.24, ',', 3],[190.0, 380, 'K', 3]

K
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183140, 183140)
 The electron dominated chargetransport has been realized from the Seebeck coefficient, S - 82 uV/K, at 380K, and Hall carrier concentration of ne  9.8 x 1019 cm-3 at 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.42, 'Wm', 1],[43.0, 135, 'K', 1],[10.0, 82, 'uV', 0],[15.0, 9.8, 'x', 0],[16.0, 1019, 'cm', 0],[21.0, 300, 'K', 0],[178.0, 0.24, ',', 3],[182.0, 380, 'K', 3]

W
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183174, 183174)
 Observationof weak antilocalization (WAL), due to spin-orbit coupling (SOC) of heavy Biand Te, advocate Bi4GeTe7 to be a topological quantum material also.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.42, 'Wm', 2],[77.0, 135, 'K', 2],[44.0, 82, 'uV', 1],[19.0, 9.8, 'x', 1],[18.0, 1019, 'cm', 1],[13.0, 300, 'K', 1],[144.0, 0.24, ',', 2],[148.0, 380, 'K', 2]

(SOC)
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183190, 183194)
 Observationof weak antilocalization (WAL), due to spin-orbit coupling (SOC) of heavy Biand Te, advocate Bi4GeTe7 to be a topological quantum material also.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0.42, 'Wm', 2],[93.0, 135, 'K', 2],[60.0, 82, 'uV', 1],[35.0, 9.8, 'x', 1],[34.0, 1019, 'cm', 1],[29.0, 300, 'K', 1],[124.0, 0.24, ',', 2],[128.0, 380, 'K', 2]

Bi
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183200, 183200)
 Observationof weak antilocalization (WAL), due to spin-orbit coupling (SOC) of heavy Biand Te, advocate Bi4GeTe7 to be a topological quantum material also.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0.42, 'Wm', 2],[103.0, 135, 'K', 2],[70.0, 82, 'uV', 1],[45.0, 9.8, 'x', 1],[44.0, 1019, 'cm', 1],[39.0, 300, 'K', 1],[118.0, 0.24, ',', 2],[122.0, 380, 'K', 2]

Te
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183205, 183205)
 Observationof weak antilocalization (WAL), due to spin-orbit coupling (SOC) of heavy Biand Te, advocate Bi4GeTe7 to be a topological quantum material also.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 0.42, 'Wm', 2],[108.0, 135, 'K', 2],[75.0, 82, 'uV', 1],[50.0, 9.8, 'x', 1],[49.0, 1019, 'cm', 1],[44.0, 300, 'K', 1],[113.0, 0.24, ',', 2],[117.0, 380, 'K', 2]

Bi4GeTe7
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183210, 183214)
 Observationof weak antilocalization (WAL), due to spin-orbit coupling (SOC) of heavy Biand Te, advocate Bi4GeTe7 to be a topological quantum material also.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0.42, 'Wm', 2],[113.0, 135, 'K', 2],[80.0, 82, 'uV', 1],[55.0, 9.8, 'x', 1],[54.0, 1019, 'cm', 1],[49.0, 300, 'K', 1],[104.0, 0.24, ',', 2],[108.0, 380, 'K', 2]

Bi4GeTe7
###Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure|Niraj Kumar Singh,Ankit Kashyap,Ajay Soni###
(183327, 183331)
 Thus, being a poor thermal conductor with a TE figure ofmerit, ZT  0.24, at 380 K, the Bi4GeTe7 is a good material for TEapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 0.42, 'Wm', 4],[230.0, 135, 'K', 4],[197.0, 82, 'uV', 3],[172.0, 9.8, 'x', 3],[171.0, 1019, 'cm', 3],[166.0, 300, 'K', 3],[9.0, 0.24, ',', 0],[5.0, 380, 'K', 0]

In
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183381, 183381)
Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0, ',', 1],[91.0, 0.01, ',', 1],[94.0, 0.02, ',', 1],[351.0, 783, 'K', 7],[384.0, 0.42, 'W', 8],[394.0, 750, 'K', 8],[438.0, 0.34, 'at', 9],[439.0, 773, 'K', 9]

Ga
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183385, 183385)
Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0, ',', 1],[87.0, 0.01, ',', 1],[90.0, 0.02, ',', 1],[347.0, 783, 'K', 7],[380.0, 0.42, 'W', 8],[390.0, 750, 'K', 8],[434.0, 0.34, 'at', 9],[435.0, 773, 'K', 9]

SnTe
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183395, 183396)
Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0, ',', 1],[76.0, 0.01, ',', 1],[79.0, 0.02, ',', 1],[336.0, 783, 'K', 7],[369.0, 0.42, 'W', 8],[379.0, 750, 'K', 8],[423.0, 0.34, 'at', 9],[424.0, 773, 'K', 9]

In
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183415, 183415)
 We report the effect of co-doping of In and Ga at low concentrations on thestructural, electronic, and thermoelectric properties of SnTe basedcompositions Sn1.03-2xInxGax<missing VAR>Te (x<missing VAR>  0, 0.01, 0.02, 0.04) prepared bythe solid-state route and spark plasma sintering (SPS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0, ',', 0],[57.0, 0.01, ',', 0],[60.0, 0.02, ',', 0],[317.0, 783, 'K', 6],[350.0, 0.42, 'W', 7],[360.0, 750, 'K', 7],[404.0, 0.34, 'at', 8],[405.0, 773, 'K', 8]

Ga
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183419, 183419)
 We report the effect of co-doping of In and Ga at low concentrations on thestructural, electronic, and thermoelectric properties of SnTe basedcompositions Sn1.03-2xInxGax<missing VAR>Te (x<missing VAR>  0, 0.01, 0.02, 0.04) prepared bythe solid-state route and spark plasma sintering (SPS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0, ',', 0],[53.0, 0.01, ',', 0],[56.0, 0.02, ',', 0],[313.0, 783, 'K', 6],[346.0, 0.42, 'W', 7],[356.0, 750, 'K', 7],[400.0, 0.34, 'at', 8],[401.0, 773, 'K', 8]

SnTe
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183446, 183447)
 We report the effect of co-doping of In and Ga at low concentrations on thestructural, electronic, and thermoelectric properties of SnTe basedcompositions Sn1.03-2xInxGax<missing VAR>Te (x<missing VAR>  0, 0.01, 0.02, 0.04) prepared bythe solid-state route and spark plasma sintering (SPS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0, ',', 0],[25.0, 0.01, ',', 0],[28.0, 0.02, ',', 0],[285.0, 783, 'K', 6],[318.0, 0.42, 'W', 7],[328.0, 750, 'K', 7],[372.0, 0.34, 'at', 8],[373.0, 773, 'K', 8]

Sn1.03
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183454, 183455)
 We report the effect of co-doping of In and Ga at low concentrations on thestructural, electronic, and thermoelectric properties of SnTe basedcompositions Sn1.03-2xInxGax<missing VAR>Te (x<missing VAR>  0, 0.01, 0.02, 0.04) prepared bythe solid-state route and spark plasma sintering (SPS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0, ',', 0],[17.0, 0.01, ',', 0],[20.0, 0.02, ',', 0],[277.0, 783, 'K', 6],[310.0, 0.42, 'W', 7],[320.0, 750, 'K', 7],[364.0, 0.34, 'at', 8],[365.0, 773, 'K', 8]

Ga
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183461, 183461)
 We report the effect of co-doping of In and Ga at low concentrations on thestructural, electronic, and thermoelectric properties of SnTe basedcompositions Sn1.03-2xInxGax<missing VAR>Te (x<missing VAR>  0, 0.01, 0.02, 0.04) prepared bythe solid-state route and spark plasma sintering (SPS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0, ',', 0],[11.0, 0.01, ',', 0],[14.0, 0.02, ',', 0],[271.0, 783, 'K', 6],[304.0, 0.42, 'W', 7],[314.0, 750, 'K', 7],[358.0, 0.34, 'at', 8],[359.0, 773, 'K', 8]

Te
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183463, 183463)
 We report the effect of co-doping of In and Ga at low concentrations on thestructural, electronic, and thermoelectric properties of SnTe basedcompositions Sn1.03-2xInxGax<missing VAR>Te (x<missing VAR>  0, 0.01, 0.02, 0.04) prepared bythe solid-state route and spark plasma sintering (SPS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0, ',', 0],[9.0, 0.01, ',', 0],[12.0, 0.02, ',', 0],[269.0, 783, 'K', 6],[302.0, 0.42, 'W', 7],[312.0, 750, 'K', 7],[356.0, 0.34, 'at', 8],[357.0, 773, 'K', 8]

(SPS)
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183502, 183506)
 We report the effect of co-doping of In and Ga at low concentrations on thestructural, electronic, and thermoelectric properties of SnTe basedcompositions Sn1.03-2xInxGax<missing VAR>Te (x<missing VAR>  0, 0.01, 0.02, 0.04) prepared bythe solid-state route and spark plasma sintering (SPS).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0, ',', 0],[30.0, 0.01, ',', 0],[27.0, 0.02, ',', 0],[226.0, 783, 'K', 6],[259.0, 0.42, 'W', 7],[269.0, 750, 'K', 7],[313.0, 0.34, 'at', 8],[314.0, 773, 'K', 8]

Fm
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183525, 183525)
 All compositions formedin the fcc structure (Fm-3m) with no other impurity phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0
[56.0, 0, ',', 1],[53.0, 0.01, ',', 1],[50.0, 0.02, ',', 1],[207.0, 783, 'K', 5],[240.0, 0.42, 'W', 6],[250.0, 750, 'K', 6],[294.0, 0.34, 'at', 7],[295.0, 773, 'K', 7]

Ga
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183608, 183608)
 Firstprinciple electronic structure calculations showed band convergence and theformation of resonant levels, due to Ga and In doping respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 0, ',', 3],[136.0, 0.01, ',', 3],[133.0, 0.02, ',', 3],[124.0, 783, 'K', 3],[157.0, 0.42, 'W', 4],[167.0, 750, 'K', 4],[211.0, 0.34, 'at', 5],[212.0, 773, 'K', 5]

In
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183612, 183612)
 Firstprinciple electronic structure calculations showed band convergence and theformation of resonant levels, due to Ga and In doping respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0, ',', 3],[140.0, 0.01, ',', 3],[137.0, 0.02, ',', 3],[120.0, 783, 'K', 3],[153.0, 0.42, 'W', 4],[163.0, 750, 'K', 4],[207.0, 0.34, 'at', 5],[208.0, 773, 'K', 5]

In
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183636, 183636)
 The carrierconcentration increased on hole-doping by In and Ga ions while carrier mobilitydecreased due to impurity scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0, ',', 4],[164.0, 0.01, ',', 4],[161.0, 0.02, ',', 4],[96.0, 783, 'K', 2],[129.0, 0.42, 'W', 3],[139.0, 750, 'K', 3],[183.0, 0.34, 'at', 4],[184.0, 773, 'K', 4]

Ga
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183640, 183640)
 The carrierconcentration increased on hole-doping by In and Ga ions while carrier mobilitydecreased due to impurity scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0, ',', 4],[168.0, 0.01, ',', 4],[165.0, 0.02, ',', 4],[92.0, 783, 'K', 2],[125.0, 0.42, 'W', 3],[135.0, 750, 'K', 3],[179.0, 0.34, 'at', 4],[180.0, 773, 'K', 4]

V/K
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183727, 183729)
 The Seebeck coefficient of the doped samples increased linearly withtemperature, reaching 85 - 95 muV/K at 783 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[258.0, 0, ',', 6],[255.0, 0.01, ',', 6],[252.0, 0.02, ',', 6],[3.0, 783, 'K', 0],[36.0, 0.42, 'W', 1],[46.0, 750, 'K', 1],[90.0, 0.34, 'at', 2],[91.0, 773, 'K', 2]

K
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183770, 183770)
 Thermal conductivitydecreased sharply with co-doping, and the lattice thermal conductivity droppedto 0.42 Wm<missing VAR>-1 K-1 above 750 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 0, ',', 7],[298.0, 0.01, ',', 7],[295.0, 0.02, ',', 7],[38.0, 783, 'K', 1],[5.0, 0.42, 'W', 0],[5.0, 750, 'K', 0],[49.0, 0.34, 'at', 1],[50.0, 773, 'K', 1]

SnTe
###Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe|Gaurav Jamwal,Ankit Kumar,Mohd Warish,Shruti Chakravarty,Saravanan Muthiah,Asokan Kandasami,Asad Niazi###
(183833, 183834)
 The enhanced power factor and lowlattice thermal conductivity on doping resulted in a maximum figure of merit ZT 0.34 at 773 K, twice that of the pristine SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 0, ',', 8],[361.0, 0.01, ',', 8],[358.0, 0.02, ',', 8],[101.0, 783, 'K', 2],[68.0, 0.42, 'W', 1],[58.0, 750, 'K', 1],[14.0, 0.34, 'at', 0],[13.0, 773, 'K', 0]

Pd
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183848, 183848)
Janus -PdX<missing VAR>Y (X<missing VAR>/Y  S, Se, Te) Materials with high Anisotropic Thermoelectric Performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 800, 'K', 2],[316.0, 0.8, 'W', 5],[323.0, 0.94, 'W', 5],[331.0, 0.77, 'W', 5],[441.0, 300, 'K', 7]

Y
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183850, 183850)
Janus -PdX<missing VAR>Y (X<missing VAR>/Y  S, Se, Te) Materials with high Anisotropic Thermoelectric Performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 800, 'K', 2],[314.0, 0.8, 'W', 5],[321.0, 0.94, 'W', 5],[329.0, 0.77, 'W', 5],[439.0, 300, 'K', 7]

Y
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183855, 183855)
Janus -PdX<missing VAR>Y (X<missing VAR>/Y  S, Se, Te) Materials with high Anisotropic Thermoelectric Performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 800, 'K', 2],[309.0, 0.8, 'W', 5],[316.0, 0.94, 'W', 5],[324.0, 0.77, 'W', 5],[434.0, 300, 'K', 7]

S
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183858, 183858)
Janus -PdX<missing VAR>Y (X<missing VAR>/Y  S, Se, Te) Materials with high Anisotropic Thermoelectric Performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 800, 'K', 2],[306.0, 0.8, 'W', 5],[313.0, 0.94, 'W', 5],[321.0, 0.77, 'W', 5],[431.0, 300, 'K', 7]

Se
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183861, 183861)
Janus -PdX<missing VAR>Y (X<missing VAR>/Y  S, Se, Te) Materials with high Anisotropic Thermoelectric Performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 800, 'K', 2],[303.0, 0.8, 'W', 5],[310.0, 0.94, 'W', 5],[318.0, 0.77, 'W', 5],[428.0, 300, 'K', 7]

Te
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183864, 183864)
Janus -PdX<missing VAR>Y (X<missing VAR>/Y  S, Se, Te) Materials with high Anisotropic Thermoelectric Performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 800, 'K', 2],[300.0, 0.8, 'W', 5],[307.0, 0.94, 'W', 5],[315.0, 0.77, 'W', 5],[425.0, 300, 'K', 7]

S
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183933, 183933)
 Two-dimensional (2D) materials have garnered considerable attention as anemerging thermoelectric (TE) material owing to their unique density of state(D<missing VAR>OS) near the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 800, 'K', 1],[231.0, 0.8, 'W', 4],[238.0, 0.94, 'W', 4],[246.0, 0.77, 'W', 4],[356.0, 300, 'K', 6]

Pd
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183963, 183963)
 We investigate the TE performance of Janusbeta-PdX<missing VAR>Y (X<missing VAR>/YS, Se, Te) monolayer materials as a function of carrierconcentration and mid-temperature range (300 to 800 K) by combining densityfunctional theory (DFT) and semi-classical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 800, 'K', 0],[201.0, 0.8, 'W', 3],[208.0, 0.94, 'W', 3],[216.0, 0.77, 'W', 3],[326.0, 300, 'K', 5]

Y
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183965, 183965)
 We investigate the TE performance of Janusbeta-PdX<missing VAR>Y (X<missing VAR>/YS, Se, Te) monolayer materials as a function of carrierconcentration and mid-temperature range (300 to 800 K) by combining densityfunctional theory (DFT) and semi-classical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 800, 'K', 0],[199.0, 0.8, 'W', 3],[206.0, 0.94, 'W', 3],[214.0, 0.77, 'W', 3],[324.0, 300, 'K', 5]

YS
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183970, 183971)
 We investigate the TE performance of Janusbeta-PdX<missing VAR>Y (X<missing VAR>/YS, Se, Te) monolayer materials as a function of carrierconcentration and mid-temperature range (300 to 800 K) by combining densityfunctional theory (DFT) and semi-classical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 800, 'K', 0],[193.0, 0.8, 'W', 3],[200.0, 0.94, 'W', 3],[208.0, 0.77, 'W', 3],[318.0, 300, 'K', 5]

Se
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183974, 183974)
 We investigate the TE performance of Janusbeta-PdX<missing VAR>Y (X<missing VAR>/YS, Se, Te) monolayer materials as a function of carrierconcentration and mid-temperature range (300 to 800 K) by combining densityfunctional theory (DFT) and semi-classical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 800, 'K', 0],[190.0, 0.8, 'W', 3],[197.0, 0.94, 'W', 3],[205.0, 0.77, 'W', 3],[315.0, 300, 'K', 5]

Te
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(183977, 183977)
 We investigate the TE performance of Janusbeta-PdX<missing VAR>Y (X<missing VAR>/YS, Se, Te) monolayer materials as a function of carrierconcentration and mid-temperature range (300 to 800 K) by combining densityfunctional theory (DFT) and semi-classical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 800, 'K', 0],[187.0, 0.8, 'W', 3],[194.0, 0.94, 'W', 3],[202.0, 0.77, 'W', 3],[312.0, 300, 'K', 5]

I
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184054, 184054)
 Thephonon dispersion spectra and AIMD simulations confirm their thermal anddynamical stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 800, 'K', 1],[110.0, 0.8, 'W', 2],[117.0, 0.94, 'W', 2],[125.0, 0.77, 'W', 2],[235.0, 300, 'K', 4]

Pd
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184112, 184112)
 The transport calculation results reveal the highlyanisotropic TE performance for both n<missing VAR> and p<missing VAR>-type Janus beta-PdX<missing VAR>Y monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 800, 'K', 2],[52.0, 0.8, 'W', 1],[59.0, 0.94, 'W', 1],[67.0, 0.77, 'W', 1],[177.0, 300, 'K', 3]

Y
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184114, 184114)
 The transport calculation results reveal the highlyanisotropic TE performance for both n<missing VAR> and p<missing VAR>-type Janus beta-PdX<missing VAR>Y monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 800, 'K', 2],[50.0, 0.8, 'W', 1],[57.0, 0.94, 'W', 1],[65.0, 0.77, 'W', 1],[175.0, 300, 'K', 3]

K
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184159, 184159)
Meanwhile, the coexistence of low phonon group velocity and convergedscattering rate leads to lower lattice thermal conductivity (Kl) of 0.80 W/m<missing VAR>K, 0.94 W/m<missing VAR> K, and 0.77 W/m<missing VAR> K along y<missing VAR>-direction for these Janus materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 800, 'K', 3],[5.0, 0.8, 'W', 0],[12.0, 0.94, 'W', 0],[20.0, 0.77, 'W', 0],[130.0, 300, 'K', 2]

K
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184169, 184169)
Meanwhile, the coexistence of low phonon group velocity and convergedscattering rate leads to lower lattice thermal conductivity (Kl) of 0.80 W/m<missing VAR>K, 0.94 W/m<missing VAR> K, and 0.77 W/m<missing VAR> K along y<missing VAR>-direction for these Janus materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 800, 'K', 3],[5.0, 0.8, 'W', 0],[2.0, 0.94, 'W', 0],[10.0, 0.77, 'W', 0],[120.0, 300, 'K', 2]

K
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184175, 184175)
Meanwhile, the coexistence of low phonon group velocity and convergedscattering rate leads to lower lattice thermal conductivity (Kl) of 0.80 W/m<missing VAR>K, 0.94 W/m<missing VAR> K, and 0.77 W/m<missing VAR> K along y<missing VAR>-direction for these Janus materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 800, 'K', 3],[11.0, 0.8, 'W', 0],[4.0, 0.94, 'W', 0],[4.0, 0.77, 'W', 0],[114.0, 300, 'K', 2]

K
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184183, 184183)
Meanwhile, the coexistence of low phonon group velocity and convergedscattering rate leads to lower lattice thermal conductivity (Kl) of 0.80 W/m<missing VAR>K, 0.94 W/m<missing VAR> K, and 0.77 W/m<missing VAR> K along y<missing VAR>-direction for these Janus materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 800, 'K', 3],[19.0, 0.8, 'W', 0],[12.0, 0.94, 'W', 0],[4.0, 0.77, 'W', 0],[106.0, 300, 'K', 2]

(S)
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184229, 184231)
While the high TE power factor is attributed to the high Seebeck coefficient(S) and electrical conductivity, which is due to the degenerate top valancebands of these Janus monolayers.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 800, 'K', 4],[65.0, 0.8, 'W', 1],[58.0, 0.94, 'W', 1],[50.0, 0.77, 'W', 1],[58.0, 300, 'K', 1]

K
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184276, 184276)
 The combination of lower Kl<missing VAR> and high-powerfactor at 300K (800 K) leads to an optimal figure of merit (ZT) as 0.68 (2.21),0.86 (4.09) and 0.68 (3.63) for p<missing VAR>-type Janus PdSSe, PdSeTe and PdSTemonolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 800, 'K', 5],[112.0, 0.8, 'W', 2],[105.0, 0.94, 'W', 2],[97.0, 0.77, 'W', 2],[13.0, 300, 'K', 0]

K
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184294, 184294)
 The combination of lower Kl<missing VAR> and high-powerfactor at 300K (800 K) leads to an optimal figure of merit (ZT) as 0.68 (2.21),0.86 (4.09) and 0.68 (3.63) for p<missing VAR>-type Janus PdSSe, PdSeTe and PdSTemonolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 800, 'K', 5],[130.0, 0.8, 'W', 2],[123.0, 0.94, 'W', 2],[115.0, 0.77, 'W', 2],[5.0, 300, 'K', 0]

PdSSe
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184348, 184350)
 The combination of lower Kl<missing VAR> and high-powerfactor at 300K (800 K) leads to an optimal figure of merit (ZT) as 0.68 (2.21),0.86 (4.09) and 0.68 (3.63) for p<missing VAR>-type Janus PdSSe, PdSeTe and PdSTemonolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 800, 'K', 5],[184.0, 0.8, 'W', 2],[177.0, 0.94, 'W', 2],[169.0, 0.77, 'W', 2],[59.0, 300, 'K', 0]

PdSeTe
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184353, 184355)
 The combination of lower Kl<missing VAR> and high-powerfactor at 300K (800 K) leads to an optimal figure of merit (ZT) as 0.68 (2.21),0.86 (4.09) and 0.68 (3.63) for p<missing VAR>-type Janus PdSSe, PdSeTe and PdSTemonolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 800, 'K', 5],[189.0, 0.8, 'W', 2],[182.0, 0.94, 'W', 2],[174.0, 0.77, 'W', 2],[64.0, 300, 'K', 0]

PdSTe
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184359, 184361)
 The combination of lower Kl<missing VAR> and high-powerfactor at 300K (800 K) leads to an optimal figure of merit (ZT) as 0.68 (2.21),0.86 (4.09) and 0.68 (3.63) for p<missing VAR>-type Janus PdSSe, PdSeTe and PdSTemonolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 800, 'K', 5],[195.0, 0.8, 'W', 2],[188.0, 0.94, 'W', 2],[180.0, 0.77, 'W', 2],[70.0, 300, 'K', 0]

Pd
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184458, 184458)
 These findings indicated thatthe Janus beta-PdX<missing VAR>Y monolayers are promising candidates for TE conversiondevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[449.0, 800, 'K', 7],[294.0, 0.8, 'W', 4],[287.0, 0.94, 'W', 4],[279.0, 0.77, 'W', 4],[169.0, 300, 'K', 2]

Y
###Janus $β$-PdXY (X/Y = S, Se, Te) Materials with high Anisotropic Thermoelectric Performance|Mukesh Jakhar,Raman Sharma,Ashok Kumar###
(184460, 184460)
 These findings indicated thatthe Janus beta-PdX<missing VAR>Y monolayers are promising candidates for TE conversiondevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[451.0, 800, 'K', 7],[296.0, 0.8, 'W', 4],[289.0, 0.94, 'W', 4],[281.0, 0.77, 'W', 4],[171.0, 300, 'K', 2]

NaSrSb
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184497, 184499)
Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 1.9, 'and', 3],[116.0, 1.3, 'W', 3]

NaBaSb
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184503, 184505)
Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 1.9, 'and', 3],[110.0, 1.3, 'W', 3]

In
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184546, 184546)
 In the quest of the same, using first-principles methods combinedwith Boltzmann transport theory, we explored two recent phases NaSrSb andNaBaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1.9, 'and', 1],[69.0, 1.3, 'W', 1]

NaSrSb
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184589, 184591)
 In the quest of the same, using first-principles methods combinedwith Boltzmann transport theory, we explored two recent phases NaSrSb andNaBaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1.9, 'and', 1],[24.0, 1.3, 'W', 1]

NaBaSb
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184596, 184598)
 In the quest of the same, using first-principles methods combinedwith Boltzmann transport theory, we explored two recent phases NaSrSb andNaBaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1.9, 'and', 1],[17.0, 1.3, 'W', 1]

K
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184622, 184622)
 We found low lattice thermal conductivity of 1.9 and 1.3 W m<missing VAR>-1K-1 at 300K for NaSrSb and NaBaSb, respectively, which are of the sameorder as other potential Zintl phases such as Sr3AlSb3 and BaCuSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1.9, 'and', 0],[7.0, 1.3, 'W', 0]

K
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184629, 184629)
 We found low lattice thermal conductivity of 1.9 and 1.3 W m<missing VAR>-1K-1 at 300K for NaSrSb and NaBaSb, respectively, which are of the sameorder as other potential Zintl phases such as Sr3AlSb3 and BaCuSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1.9, 'and', 0],[14.0, 1.3, 'W', 0]

NaSrSb
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184633, 184635)
 We found low lattice thermal conductivity of 1.9 and 1.3 W m<missing VAR>-1K-1 at 300K for NaSrSb and NaBaSb, respectively, which are of the sameorder as other potential Zintl phases such as Sr3AlSb3 and BaCuSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 1.9, 'and', 0],[18.0, 1.3, 'W', 0]

NaBaSb
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184639, 184641)
 We found low lattice thermal conductivity of 1.9 and 1.3 W m<missing VAR>-1K-1 at 300K for NaSrSb and NaBaSb, respectively, which are of the sameorder as other potential Zintl phases such as Sr3AlSb3 and BaCuSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1.9, 'and', 0],[24.0, 1.3, 'W', 0]

Sr3AlSb3
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184674, 184678)
 We found low lattice thermal conductivity of 1.9 and 1.3 W m<missing VAR>-1K-1 at 300K for NaSrSb and NaBaSb, respectively, which are of the sameorder as other potential Zintl phases such as Sr3AlSb3 and BaCuSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1.9, 'and', 0],[59.0, 1.3, 'W', 0]

BaCuSb
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184682, 184684)
 We found low lattice thermal conductivity of 1.9 and 1.3 W m<missing VAR>-1K-1 at 300K for NaSrSb and NaBaSb, respectively, which are of the sameorder as other potential Zintl phases such as Sr3AlSb3 and BaCuSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1.9, 'and', 0],[67.0, 1.3, 'W', 0]

K
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184818, 184818)
 Further, we obtain a high figure ofmerit of ZTsim2.0 at 900K for textitn<missing VAR>-type NaSrSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 1.9, 'and', 3],[203.0, 1.3, 'W', 3]

NaSrSb
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184827, 184829)
 Further, we obtain a high figure ofmerit of ZTsim2.0 at 900K for textitn<missing VAR>-type NaSrSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 1.9, 'and', 3],[212.0, 1.3, 'W', 3]

NaBaSb
###Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects|Chandan Kumar Vishwakarma,Mohd Zeeshan,B. K. Mani###
(184857, 184859)
 On the other hand,the figure of merit of textitn<missing VAR>-type NaBaSb surpasses the unity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 1.9, 'and', 4],[242.0, 1.3, 'W', 4]

In
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(184946, 184946)
 In the design of materials with low lattice thermal conductivity, compoundswith high density, low speed of sound, and complexity at either the atomic,nano- or microstructural level are preferred.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185020, 185023)
 The layered compound Mg3Sb2defies these prevailing paradigms, exhibiting lattice thermal conductivitycomparable to PbTe and Bi2Te3, despite its low density and simplestructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbTe
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185048, 185049)
 The layered compound Mg3Sb2defies these prevailing paradigms, exhibiting lattice thermal conductivitycomparable to PbTe and Bi2Te3, despite its low density and simplestructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185053, 185056)
 The layered compound Mg3Sb2defies these prevailing paradigms, exhibiting lattice thermal conductivitycomparable to PbTe and Bi2Te3, despite its low density and simplestructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185099, 185102)
 The excellent thermoelectric performance (zT sim 1.5) inn<missing VAR>-type Mg3Sb2 has thus far been attributed to its multi-valleyconduction band, while its anomalous thermal properties have been largelyoverlooked.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185171, 185174)
 To explain the origin of the low lattice thermal conductivity ofMg3Sb2, we have used both experimental methods and ab initio phononcalculations to investigate trends in the elasticity, thermal expansion andanharmonicity of AMg2Pn2 Zintl compounds with A  Mg, Ca, Yb, and Pn Sb and Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg2
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185225, 185226)
 To explain the origin of the low lattice thermal conductivity ofMg3Sb2, we have used both experimental methods and ab initio phononcalculations to investigate trends in the elasticity, thermal expansion andanharmonicity of AMg2Pn2 Zintl compounds with A  Mg, Ca, Yb, and Pn Sb and Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185239, 185239)
 To explain the origin of the low lattice thermal conductivity ofMg3Sb2, we have used both experimental methods and ab initio phononcalculations to investigate trends in the elasticity, thermal expansion andanharmonicity of AMg2Pn2 Zintl compounds with A  Mg, Ca, Yb, and Pn Sb and Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185242, 185242)
 To explain the origin of the low lattice thermal conductivity ofMg3Sb2, we have used both experimental methods and ab initio phononcalculations to investigate trends in the elasticity, thermal expansion andanharmonicity of AMg2Pn2 Zintl compounds with A  Mg, Ca, Yb, and Pn Sb and Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Yb
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185245, 185245)
 To explain the origin of the low lattice thermal conductivity ofMg3Sb2, we have used both experimental methods and ab initio phononcalculations to investigate trends in the elasticity, thermal expansion andanharmonicity of AMg2Pn2 Zintl compounds with A  Mg, Ca, Yb, and Pn Sb and Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185254, 185254)
 To explain the origin of the low lattice thermal conductivity ofMg3Sb2, we have used both experimental methods and ab initio phononcalculations to investigate trends in the elasticity, thermal expansion andanharmonicity of AMg2Pn2 Zintl compounds with A  Mg, Ca, Yb, and Pn Sb and Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185258, 185258)
 To explain the origin of the low lattice thermal conductivity ofMg3Sb2, we have used both experimental methods and ab initio phononcalculations to investigate trends in the elasticity, thermal expansion andanharmonicity of AMg2Pn2 Zintl compounds with A  Mg, Ca, Yb, and Pn Sb and Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185289, 185292)
 Phonon calculations within the quasi-harmonic approximation reveallarge mode Gruneisen parameters in Mg3Sb2 compared with isostructuralcompounds, in particular in transverse acoustic modes involving shearing ofadjacent anionic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Sb2
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185420, 185423)
 We attribute the anomalousthermal behavior of Mg3Sb2 to the diminutive size of Mg, which may be toosmall for the octahedrally-coordinated site, leading to weak, unstableinterlayer Mg-Sb bonding.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185435, 185435)
 We attribute the anomalousthermal behavior of Mg3Sb2 to the diminutive size of Mg, which may be toosmall for the octahedrally-coordinated site, leading to weak, unstableinterlayer Mg-Sb bonding.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185472, 185472)
 We attribute the anomalousthermal behavior of Mg3Sb2 to the diminutive size of Mg, which may be toosmall for the octahedrally-coordinated site, leading to weak, unstableinterlayer Mg-Sb bonding.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure|Wanyue Peng,Guido Petretto,Gian-Marco Rignanese,Geoffroy Hautier,Alexandra Zevalkink###
(185474, 185474)
 We attribute the anomalousthermal behavior of Mg3Sb2 to the diminutive size of Mg, which may be toosmall for the octahedrally-coordinated site, leading to weak, unstableinterlayer Mg-Sb bonding.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba8Ga16Ge30
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185549, 185554)
Nanostructuring of Ba8Ga16Ge30 clathrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2962962962962963,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14814814814814814,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 300, 'nm', 6],[159.0, 300, 'nm', 6],[162.0, 50, 'nm', 6],[181.0, 10, 'nm', 6],[271.0, 53, '%', 9],[460.0, 93, '%', 12],[481.0, -25, '%', 12]

Ba8Ga16Ge30
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185574, 185579)
 First thermoelectric properties measurements on bulk nanostructuredBa8Ga16Ge30 clathrate-I are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2962962962962963,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14814814814814814,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 300, 'nm', 5],[134.0, 300, 'nm', 5],[137.0, 50, 'nm', 5],[156.0, 10, 'nm', 5],[246.0, 53, '%', 8],[435.0, 93, '%', 11],[456.0, -25, '%', 11]

I
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185583, 185583)
 First thermoelectric properties measurements on bulk nanostructuredBa8Ga16Ge30 clathrate-I are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 300, 'nm', 5],[130.0, 300, 'nm', 5],[133.0, 50, 'nm', 5],[152.0, 10, 'nm', 5],[242.0, 53, '%', 8],[431.0, 93, '%', 11],[452.0, -25, '%', 11]

Ba8Ga16Ge30
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185646, 185651)
 The furtherreduction of the oxides led to quantitative yield of crystalline nanosizedBa8Ga16Ge30 clathrate-I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2962962962962963,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14814814814814814,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 300, 'nm', 3],[62.0, 300, 'nm', 3],[65.0, 50, 'nm', 3],[84.0, 10, 'nm', 3],[174.0, 53, '%', 6],[363.0, 93, '%', 9],[384.0, -25, '%', 9]

I
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185655, 185655)
 The furtherreduction of the oxides led to quantitative yield of crystalline nanosizedBa8Ga16Ge30 clathrate-I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 300, 'nm', 3],[58.0, 300, 'nm', 3],[61.0, 50, 'nm', 3],[80.0, 10, 'nm', 3],[170.0, 53, '%', 6],[359.0, 93, '%', 9],[380.0, -25, '%', 9]

S
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185739, 185739)
 SAED patterns confirm theclathrate-I structure type for both morphologies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 300, 'nm', 1],[26.0, 300, 'nm', 1],[23.0, 50, 'nm', 1],[4.0, 10, 'nm', 1],[86.0, 53, '%', 2],[275.0, 93, '%', 5],[296.0, -25, '%', 5]

I
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185753, 185753)
 SAED patterns confirm theclathrate-I structure type for both morphologies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 300, 'nm', 1],[40.0, 300, 'nm', 1],[37.0, 50, 'nm', 1],[18.0, 10, 'nm', 1],[72.0, 53, '%', 2],[261.0, 93, '%', 5],[282.0, -25, '%', 5]

(SPS)
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185783, 185787)
 The powders were compactedvia Spark Plasma Sintering (SPS) to obtain a bulk nano-structured material.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 300, 'nm', 2],[70.0, 300, 'nm', 2],[67.0, 50, 'nm', 2],[48.0, 10, 'nm', 2],[38.0, 53, '%', 1],[227.0, 93, '%', 4],[248.0, -25, '%', 4]

S
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185811, 185811)
 TheSeebeck coefficient S, measured on low-density samples (53% of deltax<missing VAR>-ray),reaches -145 muV/k<missing VAR> at 375 degC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 300, 'nm', 3],[98.0, 300, 'nm', 3],[95.0, 50, 'nm', 3],[76.0, 10, 'nm', 3],[14.0, 53, '%', 0],[203.0, 93, '%', 3],[224.0, -25, '%', 3]

V
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185844, 185844)
 TheSeebeck coefficient S, measured on low-density samples (53% of deltax<missing VAR>-ray),reaches -145 muV/k<missing VAR> at 375 degC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 300, 'nm', 3],[131.0, 300, 'nm', 3],[128.0, 50, 'nm', 3],[109.0, 10, 'nm', 3],[19.0, 53, '%', 0],[170.0, 93, '%', 3],[191.0, -25, '%', 3]

C
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185853, 185853)
 TheSeebeck coefficient S, measured on low-density samples (53% of deltax<missing VAR>-ray),reaches -145 muV/k<missing VAR> at 375 degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 300, 'nm', 3],[140.0, 300, 'nm', 3],[137.0, 50, 'nm', 3],[118.0, 10, 'nm', 3],[28.0, 53, '%', 0],[161.0, 93, '%', 3],[182.0, -25, '%', 3]

S
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185935, 185935)
 The trend of the temperature dependenceof S is in agreement with the values obtained from electronic structurecalculations and semi-classical Boltzmann transport theory within the constantscattering approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 300, 'nm', 5],[222.0, 300, 'nm', 5],[219.0, 50, 'nm', 5],[200.0, 10, 'nm', 5],[110.0, 53, '%', 2],[79.0, 93, '%', 1],[100.0, -25, '%', 1]

W
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185995, 185995)
 The total thermal conductivity (1.61 W/m<missing VAR>K), measuredon high density samples (93% of deltax<missing VAR>-ray), shows a reduction of 20-25% inrelation to the bulk materials (2.1 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 300, 'nm', 6],[282.0, 300, 'nm', 6],[279.0, 50, 'nm', 6],[260.0, 10, 'nm', 6],[170.0, 53, '%', 3],[19.0, 93, '%', 0],[40.0, -25, '%', 0]

K
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(185998, 185998)
 The total thermal conductivity (1.61 W/m<missing VAR>K), measuredon high density samples (93% of deltax<missing VAR>-ray), shows a reduction of 20-25% inrelation to the bulk materials (2.1 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 300, 'nm', 6],[285.0, 300, 'nm', 6],[282.0, 50, 'nm', 6],[263.0, 10, 'nm', 6],[173.0, 53, '%', 3],[16.0, 93, '%', 0],[37.0, -25, '%', 0]

W
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(186055, 186055)
 The total thermal conductivity (1.61 W/m<missing VAR>K), measuredon high density samples (93% of deltax<missing VAR>-ray), shows a reduction of 20-25% inrelation to the bulk materials (2.1 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 300, 'nm', 6],[342.0, 300, 'nm', 6],[339.0, 50, 'nm', 6],[320.0, 10, 'nm', 6],[230.0, 53, '%', 3],[41.0, 93, '%', 0],[20.0, -25, '%', 0]

K
###Nanostructuring of Ba8Ga16Ge30 clathrates|Vicente Pachecoa,Raul Cardoso--Gil,Deepa Kasinathan,Helge Rosner,Maik Wagner,Lorenzo Tepech--Carrillo,Wilder Carrillo--Cabrera,Katrin Meier,Yuri Grin###
(186058, 186058)
 The total thermal conductivity (1.61 W/m<missing VAR>K), measuredon high density samples (93% of deltax<missing VAR>-ray), shows a reduction of 20-25% inrelation to the bulk materials (2.1 W/m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, 300, 'nm', 6],[345.0, 300, 'nm', 6],[342.0, 50, 'nm', 6],[323.0, 10, 'nm', 6],[233.0, 53, '%', 3],[44.0, 93, '%', 0],[23.0, -25, '%', 0]

In
###On the effectiveness of the thermoelectric energy filtering mechanism in low-dimensional superlattices and nano-composites|Mischa Thesberg,Hans Kosina,Neophytos Neophytou###
(186278, 186278)
 In this work we explore the effect that reduced dimensionality hason the success of the energy-filtering mechanism for power factor enhancement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1, 'D', 1],[126.0, 1, 'D', 2],[141.0, 2, 'D', 2],[322.0, 3.0, 'We', 3],[459.0, 1, 'D', 4],[477.0, 2, 'D', 4],[483.0, 1, 'D', 4]

N
###On the effectiveness of the thermoelectric energy filtering mechanism in low-dimensional superlattices and nano-composites|Mischa Thesberg,Hans Kosina,Neophytos Neophytou###
(186347, 186347)
We use the quantum mechanical non-equilibrium Greens<missing VAR> function (NEGF) methodfor electron transport including electron-phonon scattering to explore 1D and2D<missing VAR> superlattice/nanocomposite systems.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1, 'D', 0],[57.0, 1, 'D', 1],[72.0, 2, 'D', 1],[253.0, 3.0, 'We', 2],[390.0, 1, 'D', 3],[408.0, 2, 'D', 3],[414.0, 1, 'D', 3]

F
###On the effectiveness of the thermoelectric energy filtering mechanism in low-dimensional superlattices and nano-composites|Mischa Thesberg,Hans Kosina,Neophytos Neophytou###
(186350, 186350)
We use the quantum mechanical non-equilibrium Greens<missing VAR> function (NEGF) methodfor electron transport including electron-phonon scattering to explore 1D and2D<missing VAR> superlattice/nanocomposite systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1, 'D', 0],[54.0, 1, 'D', 1],[69.0, 2, 'D', 1],[250.0, 3.0, 'We', 2],[387.0, 1, 'D', 3],[405.0, 2, 'D', 3],[411.0, 1, 'D', 3]

In
###On the effectiveness of the thermoelectric energy filtering mechanism in low-dimensional superlattices and nano-composites|Mischa Thesberg,Hans Kosina,Neophytos Neophytou###
(186566, 186566)
 In certain cases we find thatthe relative advantage can be as high as a factor of 3. We determine thatenergy-filtering is most effective when the average energy of carrier flowvaries the most in the wells and the barriers along the channel, an event whichappears when the energy of the carrier flow in the host material is low andwhen the energy relaxation mean-free-path of carriers is short.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 1, 'D', 2],[162.0, 1, 'D', 1],[147.0, 2, 'D', 1],[34.0, 3.0, 'We', 0],[171.0, 1, 'D', 1],[189.0, 2, 'D', 1],[195.0, 1, 'D', 1]

Bi2Te3
###Effectiveness of nanoinclusions for reducing bipolar effects in thermoelectric materials|Samuel Foster,Neophytos Neophytou###
(186879, 186882)
 Bipolar carrier transport is often a limiting factor in the thermoelectricefficiency of narrow bandgap materials (such as Bi2Te3 and PbTe) at hightemperatures due to the introduction of an additional term to the thermalconductivity and a reduction in the Seebeck coefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Effectiveness of nanoinclusions for reducing bipolar effects in thermoelectric materials|Samuel Foster,Neophytos Neophytou###
(186887, 186887)
 Bipolar carrier transport is often a limiting factor in the thermoelectricefficiency of narrow bandgap materials (such as Bi2Te3 and PbTe) at hightemperatures due to the introduction of an additional term to the thermalconductivity and a reduction in the Seebeck coefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effectiveness of nanoinclusions for reducing bipolar effects in thermoelectric materials|Samuel Foster,Neophytos Neophytou###
(186937, 186937)
 In this work, wepresent a theoretical investigation into the ability of nanoinclusions toreduce the detrimental effect of bipolar transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Effectiveness of nanoinclusions for reducing bipolar effects in thermoelectric materials|Samuel Foster,Neophytos Neophytou###
(187001, 187001)
 Using the quantummechanical non equilibrium Greens function (NEGF) transport formalism, wesimulate electronic transport through two-dimensional systems containingdensely packed nanoinclusions, separated by distances similar to the electronmean free path.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Effectiveness of nanoinclusions for reducing bipolar effects in thermoelectric materials|Samuel Foster,Neophytos Neophytou###
(187004, 187004)
 Using the quantummechanical non equilibrium Greens function (NEGF) transport formalism, wesimulate electronic transport through two-dimensional systems containingdensely packed nanoinclusions, separated by distances similar to the electronmean free path.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeTe/WC
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187448, 187452)
Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[576.0, 1.93, 'at', 10],[577.0, 773, 'K', 10]

I
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187534, 187534)
 We report the effect of work functionand acoustic impedance mismatch (AIM) on the TE properties of(1-z)Ge0.87Mn0.05Sb0.08Te/(z)WC composite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[494.0, 1.93, 'at', 8],[495.0, 773, 'K', 8]

WC
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187566, 187567)
 We report the effect of work functionand acoustic impedance mismatch (AIM) on the TE properties of(1-z)Ge0.87Mn0.05Sb0.08Te/(z)WC composite.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[461.0, 1.93, 'at', 8],[462.0, 773, 'K', 8]

In
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187572, 187572)
 In particular, a compositeconsisting of Mn and Sb co-doped GeTe as a matrix and WC as a dispersed phaseis prepared, and its structural and TE properties are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[456.0, 1.93, 'at', 7],[457.0, 773, 'K', 7]

Mn
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187586, 187586)
 In particular, a compositeconsisting of Mn and Sb co-doped GeTe as a matrix and WC as a dispersed phaseis prepared, and its structural and TE properties are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[442.0, 1.93, 'at', 7],[443.0, 773, 'K', 7]

Sb
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187590, 187590)
 In particular, a compositeconsisting of Mn and Sb co-doped GeTe as a matrix and WC as a dispersed phaseis prepared, and its structural and TE properties are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 1.93, 'at', 7],[439.0, 773, 'K', 7]

GeTe
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187596, 187597)
 In particular, a compositeconsisting of Mn and Sb co-doped GeTe as a matrix and WC as a dispersed phaseis prepared, and its structural and TE properties are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 1.93, 'at', 7],[432.0, 773, 'K', 7]

WC
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187607, 187608)
 In particular, a compositeconsisting of Mn and Sb co-doped GeTe as a matrix and WC as a dispersed phaseis prepared, and its structural and TE properties are investigated.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[420.0, 1.93, 'at', 7],[421.0, 773, 'K', 7]

WC
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187672, 187673)
 Thesimultaneous increase in electrical conductivity (sigma) and Seebeckcoefficient (alpha) with WC volume fraction (z) results in an enhanced powerfactor (alpha2sigma) in the composite.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 1.93, 'at', 6],[356.0, 773, 'K', 6]

KPF
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187770, 187772)
 This is furtherestablished from the work function measurement using the Kelvin probe forcemicroscopy (KPFM) technique and is also supported by the density functionaltheory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 1.93, 'at', 4],[257.0, 773, 'K', 4]

Ge0.87Mn0.05Sb0.08Te
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187825, 187831)
 The difference in elastic properties (soundvelocity) between Ge0.87Mn0.05Sb0.08Te and WC results in a high AIM<missing VAR> that leadsto a large interface thermal resistance (Rint) between the phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.025,0,0,0,0,0,0,0.435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 1.93, 'at', 3],[198.0, 773, 'K', 3]

WC
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187835, 187836)
 The difference in elastic properties (soundvelocity) between Ge0.87Mn0.05Sb0.08Te and WC results in a high AIM<missing VAR> that leadsto a large interface thermal resistance (Rint) between the phases.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 1.93, 'at', 3],[193.0, 773, 'K', 3]

I
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(187847, 187847)
 The difference in elastic properties (soundvelocity) between Ge0.87Mn0.05Sb0.08Te and WC results in a high AIM<missing VAR> that leadsto a large interface thermal resistance (Rint) between the phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 1.93, 'at', 3],[182.0, 773, 'K', 3]

WC
###Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite|Ashutosh Kumar,Preeti Bhumla,Artur Kosonowski,Karol Wolski,Szczepan Zapotoczny,Saswata Bhattacharya,Krzysztof Wojciechowski###
(188049, 188050)
 The simultaneous effect of enhancedalpha2sigma and reduced kappaph results in a maximum figure of merit(zT) of 1.93 at 773K for (1-z)Ge0.87Mn0.05Sb0.08Te/(z)WC composite havingz<missing VAR>0.010.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1.93, 'at', 0],[20.0, 773, 'K', 0]

Bi2
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188452, 188453)
It then proceeds to alayzing the latest findingd on the TE properties ofBi2(Te,Se)3 and (Bi,Sb)2Te3, PbTe, GeTe, SnSe, SnTe, Cu2-xSe, and skutteruditefilms, including superlattices and the performance of TE generators, sensors,and cooling devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188455, 188455)
It then proceeds to alayzing the latest findingd on the TE properties ofBi2(Te,Se)3 and (Bi,Sb)2Te3, PbTe, GeTe, SnSe, SnTe, Cu2-xSe, and skutteruditefilms, including superlattices and the performance of TE generators, sensors,and cooling devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188457, 188457)
It then proceeds to alayzing the latest findingd on the TE properties ofBi2(Te,Se)3 and (Bi,Sb)2Te3, PbTe, GeTe, SnSe, SnTe, Cu2-xSe, and skutteruditefilms, including superlattices and the performance of TE generators, sensors,and cooling devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188464, 188464)
It then proceeds to alayzing the latest findingd on the TE properties ofBi2(Te,Se)3 and (Bi,Sb)2Te3, PbTe, GeTe, SnSe, SnTe, Cu2-xSe, and skutteruditefilms, including superlattices and the performance of TE generators, sensors,and cooling devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188466, 188466)
It then proceeds to alayzing the latest findingd on the TE properties ofBi2(Te,Se)3 and (Bi,Sb)2Te3, PbTe, GeTe, SnSe, SnTe, Cu2-xSe, and skutteruditefilms, including superlattices and the performance of TE generators, sensors,and cooling devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te3
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188469, 188470)
It then proceeds to alayzing the latest findingd on the TE properties ofBi2(Te,Se)3 and (Bi,Sb)2Te3, PbTe, GeTe, SnSe, SnTe, Cu2-xSe, and skutteruditefilms, including superlattices and the performance of TE generators, sensors,and cooling devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbTe
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188473, 188474)
It then proceeds to alayzing the latest findingd on the TE properties ofBi2(Te,Se)3 and (Bi,Sb)2Te3, PbTe, GeTe, SnSe, SnTe, Cu2-xSe, and skutteruditefilms, including superlattices and the performance of TE generators, sensors,and cooling devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeTe
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188477, 188478)
It then proceeds to alayzing the latest findingd on the TE properties ofBi2(Te,Se)3 and (Bi,Sb)2Te3, PbTe, GeTe, SnSe, SnTe, Cu2-xSe, and skutteruditefilms, including superlattices and the performance of TE generators, sensors,and cooling devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188481, 188482)
It then proceeds to alayzing the latest findingd on the TE properties ofBi2(Te,Se)3 and (Bi,Sb)2Te3, PbTe, GeTe, SnSe, SnTe, Cu2-xSe, and skutteruditefilms, including superlattices and the performance of TE generators, sensors,and cooling devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnTe
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188485, 188486)
It then proceeds to alayzing the latest findingd on the TE properties ofBi2(Te,Se)3 and (Bi,Sb)2Te3, PbTe, GeTe, SnSe, SnTe, Cu2-xSe, and skutteruditefilms, including superlattices and the performance of TE generators, sensors,and cooling devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2-xSe
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188489, 188493)
It then proceeds to alayzing the latest findingd on the TE properties ofBi2(Te,Se)3 and (Bi,Sb)2Te3, PbTe, GeTe, SnSe, SnTe, Cu2-xSe, and skutteruditefilms, including superlattices and the performance of TE generators, sensors,and cooling devices.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

In
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188568, 188568)
 In thecontext of spin Seebeck effect (SSE) based systems, SSE<missing VAR> mechanism analysis,developments in enhancing the spin Seebeck signal since its first observation,and recent developments are covered from the facets of new system design,signal collection, magnetic manipulation, interface conditions,thickness-dependent longitudinal spin Seebeck signal, and length scale ofphonon and magnon transport in longitudinal SSE<missing VAR> (L<missing VAR>SSE) in different bi-layersystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188584, 188585)
 In thecontext of spin Seebeck effect (SSE) based systems, SSE<missing VAR> mechanism analysis,developments in enhancing the spin Seebeck signal since its first observation,and recent developments are covered from the facets of new system design,signal collection, magnetic manipulation, interface conditions,thickness-dependent longitudinal spin Seebeck signal, and length scale ofphonon and magnon transport in longitudinal SSE<missing VAR> (L<missing VAR>SSE) in different bi-layersystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188594, 188595)
 In thecontext of spin Seebeck effect (SSE) based systems, SSE<missing VAR> mechanism analysis,developments in enhancing the spin Seebeck signal since its first observation,and recent developments are covered from the facets of new system design,signal collection, magnetic manipulation, interface conditions,thickness-dependent longitudinal spin Seebeck signal, and length scale ofphonon and magnon transport in longitudinal SSE<missing VAR> (L<missing VAR>SSE) in different bi-layersystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188704, 188705)
 In thecontext of spin Seebeck effect (SSE) based systems, SSE<missing VAR> mechanism analysis,developments in enhancing the spin Seebeck signal since its first observation,and recent developments are covered from the facets of new system design,signal collection, magnetic manipulation, interface conditions,thickness-dependent longitudinal spin Seebeck signal, and length scale ofphonon and magnon transport in longitudinal SSE<missing VAR> (L<missing VAR>SSE) in different bi-layersystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188710, 188711)
 In thecontext of spin Seebeck effect (SSE) based systems, SSE<missing VAR> mechanism analysis,developments in enhancing the spin Seebeck signal since its first observation,and recent developments are covered from the facets of new system design,signal collection, magnetic manipulation, interface conditions,thickness-dependent longitudinal spin Seebeck signal, and length scale ofphonon and magnon transport in longitudinal SSE<missing VAR> (L<missing VAR>SSE) in different bi-layersystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Thermoelectric films and periodic structures and spin Seebeck effect systems: Facets of performance optimization|Nagaraj Nandihalli###
(188727, 188727)
 At the end, possible strategies for further enhancing zT of TE filmsand spin Seebeck signals of many systems are addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

