Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan|FeRh|20|%|1.0|The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.|The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao|MgO/CoFeB|249|%|0.4148936170212766|mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.|Here, we report spin transfer torque switching in nano-scaleperpendicular magnetic tunnel junctions with a magnetoresistance ratio up to249% and a resistance area product as low as 7.0 Omega.
Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta|STiO3|350|%|0.5|Our results show that despite the largenumber of defects in the strontium stannate barrier, due to the large latticemismatch, the observed tunnel magnetoresistance is comparable to tunneljunctions with a better lattice matched STiO3 barrier, reaching values of upto 350% at T<missing VAR>5 K.|Our results show that despite the largenumber of defects in the strontium stannate barrier, due to the large latticemismatch, the observed tunnel magnetoresistance is comparable to tunneljunctions with a better lattice matched STiO3 barrier, reaching values of upto 350% at T<missing VAR>5 K.
Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova|CoPtMgOCoPt|175|%|1.0|We find that the magneto-Seebeck ratio of CoPtMgOPtexceeds that of CoPtMgOCoPt for small barrier thicknesses, reaching 175% atroom temperature.|We find that the magneto-Seebeck ratio of CoPtMgOPtexceeds that of CoPtMgOCoPt for small barrier thicknesses, reaching 175% atroom temperature.
Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier|La2NiMnO6|24|%|0.044444444444444446|The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.|The ratio oftunnel magnetoresistance reaches a maximum value of 24% at 10 K, and itdecreases with temperature until it completely disappears above the criticaltemperature of LNMO at 280 K.
Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions|A. D. Rata,H. Braak,D. E. Buergler,C. M. Schneider|Co2Cr0.6Fe0.4Al/MgO/CoFe|-66|%|0.5|Magnetic tunnel junctions with the layer sequenceCo2Cr0.6Fe0.4Al/MgO/CoFe were fabricated by magnetron sputteringat room temperature (RT).|The samples exhibit a large inverse tunnelingmagnetoresistance (TMR) effect of up to -66% at RT.
Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions|A. D. Rata,H. Braak,D. E. Buergler,C. M. Schneider|Co2Cr0.6Fe0.4Al/MgO/CoFe|-84|%|0.20608108108108109|Magnetic tunnel junctions with the layer sequenceCo2Cr0.6Fe0.4Al/MgO/CoFe were fabricated by magnetron sputteringat room temperature (RT).|The largest value of -84%at 20 K reflects a rather weak influence of temperature.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|355|%|1.0|Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.|Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|578|%|1.0|Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.|Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|27|%|1.0|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|77|%|1.0|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|130|%|1.0|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno|MgO|165|%|1.0|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.|Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park|Fe3GeTe2/Fe3GeTe2|0.05|%|0.016666666666666666|Here, we achieved a twisted magnetic vdW Fe3GeTe2/Fe3GeTe2 junctionwith broken crystalline symmetry.|The PMR ratio is found to be 0.05% andgets monotonically enhanced as temperature decreases like a metallic giantmagnetoresistance (GMR).
Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno|Co40Fe40B20|355|%|1.0|The TMR ratio in a MTJ with Co40Fe40B20 reference and free layersreached 355% at the post-deposition annealing temperature of Ta400 degree C.|The TMR ratio in a MTJ with Co40Fe40B20 reference and free layersreached 355% at the post-deposition annealing temperature of Ta400 degree C.
Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno|CoFeB|450|%|0.09615384615384616|The key to have high TMR ratio is to have highly oriented(001) MgO barrier/CoFeB crystalline electrodes.|The highest TMR ratio obtainedso far is 450% at Ta  450 degree C in a pseudo spin-valve MTJ.
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|65.5|%|0.011194029850746268|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|10|%|0.009978991596638655|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|14|%|0.004213483146067416|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno|CoFe/Ru/CoFeB|361|%|0.04310344827586207|We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).|The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono|CoFeB/MgO/CoFeB|200|%|1.0|We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).|We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).
Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang|MgO|60|%|0.35333333333333333|The Vhalf, biasvoltage at which tunneling magnetoresistance drops to half of the zero-biasvalue, is found to be about 1V, which is substantially higher than that ofMgO-based junctions.|Anenhanced magnetoresistance of 60% has also been achieved.
Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno|CoFeB/MgO/CoFeB|472|%|0.8387096774193549|We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.|We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.
Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno|CoFeB/MgO/CoFeB|804|%|0.7368421052631579|We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.|We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.
GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka|GaMnAs|175|%|1.0|We observe tunneling magnetoresistance (TMR)ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-basedMTJs with other barrier materials in the same temperature region.|We observe tunneling magnetoresistance (TMR)ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-basedMTJs with other barrier materials in the same temperature region.
Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang|MgO|200|%|0.6363636363636364|In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.|In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.
MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono|MgGa2O4|121|%|1.0|Tunnelmagnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) wasobserved, suggesting a TMR enhancement by the coherent tunneling effect in theMgGa2O4 barrier.|Tunnelmagnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) wasobserved, suggesting a TMR enhancement by the coherent tunneling effect in theMgGa2O4 barrier.
MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono|MgGa2O4|196|%|1.0|Tunnelmagnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) wasobserved, suggesting a TMR enhancement by the coherent tunneling effect in theMgGa2O4 barrier.|Tunnelmagnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) wasobserved, suggesting a TMR enhancement by the coherent tunneling effect in theMgGa2O4 barrier.
Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno|Co40Fe40B20/MgO/Co40Fe40B20|49|%|0.4528301886792453|Current-driven magnetization switching in low-resistanceCo40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported.|Thecritical-current densities Jc required for current-driven switching in samplesannealed at 270C and 300C are found to be as low as 7.8 x 105 A/cm2 and 8.8 x105 A/cm2 with accompanying tunnel magnetoresistance (TMR) ratios of 49% and73 %, respectively.
Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg|B/MgO|64|%|0.16666666666666666|We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).|The junctions yield tunnelmagnetoresistance (TMR) ratios of up to 64% at 4 monolayer (ML) tunnel barrierthickness.
Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu|Tb/Co|74|%|0.0594059405940594|Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions.|Thenanofabricated magnetic tunnel junction devices have an optimized bottomreference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to74% after patterning down to sub-100nm lateral dimensions.
Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski|Co60Fe20B20/MgO/Co60Fe20B20|30|%|0.010673234811165846|Here we present direct measurements of boththe magnitude and direction of the spin torque in Co60Fe20B20/MgO/Co60Fe20B20MTJs.|The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno|CoFeB|260|%|0.5|High-resolution transmission electron microscope images show thatannealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeBstructures, even though CoFeB electrodes are amorphous in the as-sputteredstate.|The TMR ratio increases with annealing temperature and is as high as260% at room temperature and 403% at 5 K.
Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno|CoFeB|403|%|0.5|High-resolution transmission electron microscope images show thatannealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeBstructures, even though CoFeB electrodes are amorphous in the as-sputteredstate.|The TMR ratio increases with annealing temperature and is as high as260% at room temperature and 403% at 5 K.
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono|Fe/MgAl2O4|200|%|0.18452380952380953|In contrast, thicker Mg-Al (> 0.2 nm) induceda reduction of TMR ratios and featureless conductance spectra, indicating adegradation of the bottom-Fe/MgAl2O4 interface.|Aslight Mg-Al insertion (thickness < 0.1 nm) was effective for obtaining a largeTMR ratio above 200% at room temperature and observing a distinct local minimumstructure in conductance spectra.
L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang|FePd|25|%|0.3387096774193548|Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.|Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang|FePd|60|%|0.24285714285714285|Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.|Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai|MgO|150|%|1.0|We present spin transfer switching results for MgO based magnetic tunnelingjunctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to150% and low intrinsic switching current density of 2-3 x<missing VAR> 10 MA/cm2.|We present spin transfer switching results for MgO based magnetic tunnelingjunctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to150% and low intrinsic switching current density of 2-3 x<missing VAR> 10 MA/cm2.
Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani|Fe/MgAl2O4|429|%|1.0|We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.|We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.
Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani|Fe/MgAl2O4|34|%|1.0|We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.|We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.
Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani|Fe/MgO|125|%|1.0|Resistance oscillations with a MTJ barrier thickness of 0.3-nm weresignificantly enhanced compared to those of a Fe/MgO/Fe(001) MTJ, resulting ina large TMR oscillation peak-to-valley difference of 125% at RT.|Resistance oscillations with a MTJ barrier thickness of 0.3-nm weresignificantly enhanced compared to those of a Fe/MgO/Fe(001) MTJ, resulting ina large TMR oscillation peak-to-valley difference of 125% at RT.
Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer|SWCN|300|%|0.5517241379310345|Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.|Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.
Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao|MgO|64|%|0.38636363636363635|We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgObuffered Si (100).|Tunnel magnetoresistance reached up to 64% at 4.2 K.
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno|CoFeB/MgO/Fe|67|%|1.0|TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.|TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno|CoFe/Pd|78|%|0.7333333333333333|MTJs which werein-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayershowed TMR ratio of 78% by post annealing at Ta 200 degree C.|MTJs which werein-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayershowed TMR ratio of 78% by post annealing at Ta 200 degree C.
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami|MgO|87|%|0.5|Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.|The saturation magnetization is 380emu/cm3, almost the same as the value given by the Slater--Pauling--likerule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87%and 165%, respectively.
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami|MgO|165|%|0.5|Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.|The saturation magnetization is 380emu/cm3, almost the same as the value given by the Slater--Pauling--likerule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87%and 165%, respectively.
Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura|SrTiO3|500|%|0.08888888888888889|Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.|Our analysis combining thefirst-principles calculation and the Landauer formula shows that the Co-basedMTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value(290%).
Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura|SrTiO3|290|%|0.47368421052631576|Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.|Our analysis combining thefirst-principles calculation and the Landauer formula shows that the Co-basedMTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value(290%).
Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa|ZnO|96|%|0.5|We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.|We observe a high magnetoresistance ratio up to 96% at roomtemperature (RT) and find that these MTJs have asymmetric current-voltagecharacteristics, and their rectifying performances are largely dependent on themagnetization alignments of the Fe electrodes.
Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel|CoFe2O4|-18|%|0.05246913580246913|CoFe2O4tunnel barriers therefore provide a model system to investigate spin filteringin a wide range of temperatures.|Spin polarized transport measurements reveal significant TMRvalues of -18% at 2 K and -3% at 290 K.
Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel|CoFe2O4|-3|%|0.027777777777777776|CoFe2O4tunnel barriers therefore provide a model system to investigate spin filteringin a wide range of temperatures.|Spin polarized transport measurements reveal significant TMRvalues of -18% at 2 K and -3% at 290 K.
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani|Fe/MgO|400|%|1.0|Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions.|Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions.
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani|Fe/MgO|417|%|1.0|Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.|Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani|Fe/MgO|914|%|1.0|Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.|Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani|MgO|80|%|1.0|Clear TMRoscillation as a function of the MgO thickness with a large peak-to-valleydifference of 80% was observed when the layers were grown on a highly(001)-oriented Cr buffer layer.|Clear TMRoscillation as a function of the MgO thickness with a large peak-to-valleydifference of 80% was observed when the layers were grown on a highly(001)-oriented Cr buffer layer.
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani|Fe/MgO/Fe|496|%|0.5|At 3K, fine structures with two dips emerge in the plateau-liked<missing VAR>I/d<missing VAR>V, reflecting highly coherent tunneling through the Fe/MgO/Fe.|We alsoobserved a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at thebottom-Fe/MgO interface.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|200|%|0.03365384615384615|Co-rich Co1-xMnx<missing VAR> alloys have hcp or fcc disordered phases and thoseferromagnetic orderings are significantly deteriorated with increasing Mnconcentration x<missing VAR> in bulk.|, high tunnel magnetoresistance (TMR)ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions(MTJs) with the x<missing VAR>  0.25 bcc alloy electrodes [Kunimatsu et al.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|600|%|0.023148148148148147|Co-rich Co1-xMnx<missing VAR> alloys have hcp or fcc disordered phases and thoseferromagnetic orderings are significantly deteriorated with increasing Mnconcentration x<missing VAR> in bulk.|, high tunnel magnetoresistance (TMR)ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions(MTJs) with the x<missing VAR>  0.25 bcc alloy electrodes [Kunimatsu et al.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|620|%|0.022598870056497175|The singlephase bcc Co1-xMnx<missing VAR>(001) films were pseudomorphically grown on Cr(001)for 0.14 < x<missing VAR> < 0.50 with a sputtering technique.|Correspondingly, within the range of 0.25 < x<missing VAR> <0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K)as x<missing VAR> increased.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|229|%|0.018416206261510127|The singlephase bcc Co1-xMnx<missing VAR>(001) films were pseudomorphically grown on Cr(001)for 0.14 < x<missing VAR> < 0.50 with a sputtering technique.|Correspondingly, within the range of 0.25 < x<missing VAR> <0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K)as x<missing VAR> increased.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|450|%|0.0124777183600713|The singlephase bcc Co1-xMnx<missing VAR>(001) films were pseudomorphically grown on Cr(001)for 0.14 < x<missing VAR> < 0.50 with a sputtering technique.|Correspondingly, within the range of 0.25 < x<missing VAR> <0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K)as x<missing VAR> increased.
High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami|Co1-xMn|194|%|0.008726003490401396|The singlephase bcc Co1-xMnx<missing VAR>(001) films were pseudomorphically grown on Cr(001)for 0.14 < x<missing VAR> < 0.50 with a sputtering technique.|Correspondingly, within the range of 0.25 < x<missing VAR> <0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K)as x<missing VAR> increased.
High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne|MgO|185|%|0.07282913165266106|This demonstrates a pure spindependent direct tunneling mechanism and validates the high structural qualityof the MgO barrier.|The junctionsshow large tunnel magnetoresistance (185% at 300K and 330% at 4K).
High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne|MgO|330|%|0.07807807807807807|This demonstrates a pure spindependent direct tunneling mechanism and validates the high structural qualityof the MgO barrier.|The junctionsshow large tunnel magnetoresistance (185% at 300K and 330% at 4K).
A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai|Fe/MgAl2O4|160|%|1.0|Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.|Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.
A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai|Fe/MgO|1600|%|1.0|Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.|Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.
Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani|CoFe/MgO|631|%|0.39344262295081966|In this study, we demonstrated TMR ratios ofup to 631% at room temperature (RT), which is two or more times larger thanthose used currently for magnetoresistive random access memory (MRAM) devices,using CoFe/MgO/CoFe(001) epitaxial MTJs.|In this study, we demonstrated TMR ratios ofup to 631% at room temperature (RT), which is two or more times larger thanthose used currently for magnetoresistive random access memory (MRAM) devices,using CoFe/MgO/CoFe(001) epitaxial MTJs.
Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani|MgO|140|%|1.0|Particularly, the TMRoscillatory behavior dominates the transport in a wide range of MgOthicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140%at RT, attributable to the appearance of large oscillatory components inresistance area product (R<missing VAR>A).|Particularly, the TMRoscillatory behavior dominates the transport in a wide range of MgOthicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140%at RT, attributable to the appearance of large oscillatory components inresistance area product (R<missing VAR>A).
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya|MgO|0.3|%|0.782608695652174|Although the obtained TMRratio is small (0.3%), the TMR ratio is expected to be enhanced by suppressingleak current through amorphous-like crystal domains observed in MgO.|Although the obtained TMRratio is small (0.3%), the TMR ratio is expected to be enhanced by suppressingleak current through amorphous-like crystal domains observed in MgO.
Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss|MgO|135|%|0.00851063829787234|Theantiferromagnet Ru2MnGe is used to pin the magnetization direction of aferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistancestacks.|We find a sizeable maximummagnetoresistance value of 135%, which is comparable to other common Fe basedMTJ systems.
Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura|CoPt|2000|%|0.7142857142857143|The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.|The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.
Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm|Bi2Se3|1000|%|1.0|We demonstrate thatthe material properties of Bi2Se3 allow a TMR ratio at roomtemperature of the order of 1000%.|We demonstrate thatthe material properties of Bi2Se3 allow a TMR ratio at roomtemperature of the order of 1000%.
Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang|Nb/CoFeB/MgO|120|%|0.17553191489361702|An interfacial perpendicular magneticanisotropy energy density of 1.85 mJ/m<missing VAR>2 was obtained in Nb/CoFeB/MgOheterostructures.|Anoptimized magnetoresistance of 120% was obtained at room temperature, with adamping parameter of 0.011 determined by ferromagnetic resonance.
Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto|Co/Ge|1995|%|0.5238095238095238|Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometricCo2-based Heusler alloy shows a intense dependency of the tunnelmagnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratiosof up to 1995% at 4.2 K for 1. This work reports on the electronic structure ofnon-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x<missing VAR>  z<missing VAR>  2 0.38.|Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometricCo2-based Heusler alloy shows a intense dependency of the tunnelmagnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratiosof up to 1995% at 4.2 K for 1. This work reports on the electronic structure ofnon-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x<missing VAR>  z<missing VAR>  2 0.38.
Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada|Fe3O4|-12|%|0.2|With respect to the squareness of hysteresis, Fe3O4 (111)demonstrated the largest squareness.|Furthermore, we fabricated MTJs withFe3O4(110) electrodes, and obtained an TMR effect of -12% at RT.
Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions|G. D. Fuchs,J. A. Katine,S. I. Kiselev,D. Mauri,K. S. Wooley,D. C. Ralph,R. A. Buhrman|MgO|10|%|0.5|We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs)with ultra-thin MgO tunnel barrier layers to investigate the relationshipbetween the spin-transfer torque and the tunnel magnetoresistance (TMR) underfinite bias.|We find that the spin torque per unit current exerted on the freelayer decreases by less than 10% over a bias range where the TMR decreases byover 40%.
Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions|G. D. Fuchs,J. A. Katine,S. I. Kiselev,D. Mauri,K. S. Wooley,D. C. Ralph,R. A. Buhrman|MgO|40|%|0.5|We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs)with ultra-thin MgO tunnel barrier layers to investigate the relationshipbetween the spin-transfer torque and the tunnel magnetoresistance (TMR) underfinite bias.|We find that the spin torque per unit current exerted on the freelayer decreases by less than 10% over a bias range where the TMR decreases byover 40%.
Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata|Mn100-x/MgO|229|%|0.5|We have investigated the degree of crystallisation in MTJ consisting ofCoxMn100-x/MgO/CoxMn100-x (x<missing VAR>  66, 75, 83 and 86) in relation to their TMRratios.|Cross-sectional high resolution transmission electron microscopy(HRTEM) reveals that almost consistent lattice constants of these layers for 66< x<missing VAR> < 83 with maintaining large TMR ratios of 229% at RT, confirming the softnature of the CoxMn100-x layer with some dislocations at the MgO/Co75Mn25interfaces.
Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata|Mn100-x/MgO|142|%|0.25|We have investigated the degree of crystallisation in MTJ consisting ofCoxMn100-x/MgO/CoxMn100-x (x<missing VAR>  66, 75, 83 and 86) in relation to their TMRratios.|For x<missing VAR>  86, on the other hand, the TMR ratio is found to be reducedto 142% at RT, which is partially attributed to the increased number of thedislocations at the MgO/Co86Mn14 interfaces and amorphous grains identified inthe MgO barrier.
Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu|CrI3|4|%|0.5|We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.|, TMR (TER) up to sim3.36times104%(sim6.68times103%) at a specific bias voltage.
Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu|CrI3|3|%|0.5|We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.|, TMR (TER) up to sim3.36times104%(sim6.68times103%) at a specific bias voltage.
Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp|CoFe|8.7|%|0.5|We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layersystem consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer.|The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at roomtemperature which increases to 14.7% at 4.2K.
Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp|CoFe|14.7|%|0.5|We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layersystem consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer.|The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at roomtemperature which increases to 14.7% at 4.2K.
Picosecond all-optical switching of magnetic tunnel junctions|Jun-Yang Chen,Li He,Jian-Ping Wang,Mo Li|GdFeCo|0.6|%|1.0|This first optically switchable MTJ uses ferrimagneticGdFeCo as the free layer, and its switching is directly readout by measuringits tunneling magnetoresistance with a DR/R<missing VAR> ratio of 0.6%.|This first optically switchable MTJ uses ferrimagneticGdFeCo as the free layer, and its switching is directly readout by measuringits tunneling magnetoresistance with a DR/R<missing VAR> ratio of 0.6%.
Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani|MgO/CoFe|175|%|0.8260869565217391|A tunnel magnetoresistance(TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure ona 7.5-nm-thick MgO buffer.|A tunnel magnetoresistance(TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure ona 7.5-nm-thick MgO buffer.
Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu|CrI3|0|%|1.0|Wedemonstrate tunneling magnetoresistance which is drastically enhanced withincreasing CrI3 layer thickness, reaching a record 19,000% for magneticmultilayer structures using four-layer sf-MTJs at low temperatures.|Wedemonstrate tunneling magnetoresistance which is drastically enhanced withincreasing CrI3 layer thickness, reaching a record 19,000% for magneticmultilayer structures using four-layer sf-MTJs at low temperatures.
Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross|SrTiO3|300|%|1.0|The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.|The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.
Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth|(MnAs)|30|%|1.0|This is indicated by a large tunneling magnetoresistance (up to 30%) at lowtemperatures in epitaxial magnetic tunnel junctions composed of a ferromagneticmetal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by anonmagnetic semiconductor (AlAs).|This is indicated by a large tunneling magnetoresistance (up to 30%) at lowtemperatures in epitaxial magnetic tunnel junctions composed of a ferromagneticmetal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by anonmagnetic semiconductor (AlAs).
Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang|OPS/W|57.6|%|0.5|9.47-25.4 T<missing VAR>OPS/W is realized with 2-bit input, 1-bitweight and 4-bit output convolution neural network (CNN).|The integral nonlinearity is reduced by 57.6% compared with theconventional structure.
Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura|Ni/MgO|2000|%|0.32857142857142857|We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111).|The Co-basedjunction is shown to have a TMR ratio over 2000%, which is one order higherthan that of the Ni-based one.
Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee|Fe/AlN/Fe|0|%|1.0|The only exception is for the Fe/AlN/Fe junction,where we predict a magnetoresitance of around 1,000% at low bias.|The only exception is for the Fe/AlN/Fe junction,where we predict a magnetoresitance of around 1,000% at low bias.
Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang|AlO|14|%|1.0|The barrier is shown to be of good quality with the spin independentconductance only contributing a small portion, 14%, to the total roomtemperature conductance, similar to AlOX<missing VAR> and MgO barriers.|The barrier is shown to be of good quality with the spin independentconductance only contributing a small portion, 14%, to the total roomtemperature conductance, similar to AlOX<missing VAR> and MgO barriers.
Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao|LiF|16|%|0.5|Due to the water solubility of LiF, the devices were fully packagedin situ.|The devices showed sizeable positive TMR up to 16% at low biasvoltages but clearly inverted TMR at higher bias voltages.
Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin|NiO|-16|%|0.5|We attributethis to the formation of non-collinear spin structures in the NiO layer asobserved by XMCD<missing VAR>.|The magnetoresistance shows a high asymmetry with respect tobias voltage, giving rise to a negative value of -16% at 2.8 K.
Magnetic Tunnel Junction Performance Under Mechanical Strain|Niklas Roschewsky,Sebastian Schafer,Frances Hellman,Vladimir Nikitin|SI2|50|%|0.019230769230769232|We find that variations in these parameters arenegligible less than SI2percent over the entire measured range betweenthe zero stress condition and the maximum stress at the point of waferbreakage.|This setup enables us to measure keydevice performance parameters, such as tunnel magnetoresistance (TMR),switching current (Ic<missing VAR>50%) and thermal stability (Delta), as afunction of applied stress.
Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross|O(3-x)|5|%|0.31896551724137934|Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).|Junctions with a Ni counter electrode and an aluminium oxidebarrier showed reproducibly a tunneling magnetoresistance (TMR) effect at roomtemperature of up to 5% with almost ideal switching behavior.
Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture|Xueying Zhang,Wenlong Cai,Mengxing Wang,Kaihua Cao,Tianrui Zhang,Houyi Cheng,Shaoxin Li,Daoqian Zhu,Weisheng Zhao|CoFeB/W/CoFeB|200|%|0.5|Here, we experimentally demonstrate a nanoscale spin-torquememristor based on a perpendicular-anisotropy magnetic tunnel junction with aCoFeB/W/CoFeB composite free layer structure.|Its tunneling magnetoresistanceis higher than 200%, and memristive behavior can be realized by spin-transfertorque switching.
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz|MgO|20|%|0.7333333333333333|The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.|The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz|MgO|112|%|0.6415094339622641|The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.|The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions|Kaifei Kang,Shengwei Jiang,Helmuth Berger,Kenji Watanabe,Takashi Taniguchi,László Forró,Jie Shan,Kin Fai Mak|CrBr3|100|%|0.5|Here wereport tunneling spectroscopy under an in-plane magnetic field ofsuperconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that aremade of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3.|Weobserve nearly 100% tunneling anisotropic magnetoresistance (AMR), that is,difference in tunnel resistance upon changing magnetization direction fromout-of-plane to inplane.
Magneto-ionic control of spin polarization in magnetic tunnel junctions|Yingfen Wei,Sylvia Matzen,Cynthia P. Quinteros,Thomas Maroutian,Guillaume Agnus,Philippe Lecoeur,Beatriz Noheda|Hf0.5Zr0.5O2|6|%|0.5|Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported toshow both tunneling magnetoresistance effect (TMR) and tunnelingelectroresistance effect (TER), displaying four resistance states by magneticand electric field switching.|Here we show that, under electric field cyclingof large enough magnitude, the TER can reach values as large as 106%.
Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero|CrI3|95|%|1.0|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.
Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero|CrI3|300|%|1.0|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.
Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero|CrI3|550|%|1.0|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.|The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.
Assisted Tunneling in Ferromagnetic Junctions and Half-Metallic Oxides|A. M. Bratkovsky|CrO2/TiO2|30|%|0.07142857142857142|Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2.|Microscopic calculation within arealistic model shows that direct tunneling in iron group systems leads toabout a 30% change in resistance, which is close but lower than experimentallyobserved values.
Assisted Tunneling in Ferromagnetic Junctions and Half-Metallic Oxides|A. M. Bratkovsky|CrO2/TiO2|100|%|0.25|Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2.|The modelpresented here is applied qualitatively to half-metallics with 100% spinpolarization, where one-magnon processes are suppressed and the change inresistance in the absence of spin-mixing on impurities may be arbitrarilylarge.
Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy|MnO3|30|%|0.3333333333333333|A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.|In such structures, a positive tunnel magnetoresistance up to30% is obtained at low temperature.
Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars|N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Langer,B. Ocker,H. W. Schumacher|MgO|90|%|1.0|From additional measurements on MTJs after dielectric breakdown, atunneling magneto thermopower up to 90% can be derived for 1.5 nm MgO based MTJnanopillars.|From additional measurements on MTJs after dielectric breakdown, atunneling magneto thermopower up to 90% can be derived for 1.5 nm MgO based MTJnanopillars.
Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal|GaNMn3/SrTiO3/GaNMn3|4|%|0.8205128205128205|Using an GaNMn3/SrTiO3/GaNMn3 (001) AFMTJ as arepresentative example, we demonstrate a giant TMR ratio exceeding 104%and originating from the ETMR effect.|Using an GaNMn3/SrTiO3/GaNMn3 (001) AFMTJ as arepresentative example, we demonstrate a giant TMR ratio exceeding 104%and originating from the ETMR effect.
Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas|CIS|6.9|%|1.0|The CIS effect at room temperatureamounts to 6.9% R<missing VAR>-change between the high and low states and is attributed tonanostructural rearrangements of metallic ions in the electrode/barrierinterfaces.|The CIS effect at room temperatureamounts to 6.9% R<missing VAR>-change between the high and low states and is attributed tonanostructural rearrangements of metallic ions in the electrode/barrierinterfaces.
Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia|SO|164|%|1.0|Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.|Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.
Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia|SO|7|%|0.017006802721088437|Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.|Device initialization variation inswitching voltage is shown to be curtailed to 7% by controlling the D<missing VAR>W initialposition, which we show corresponds to 96% accuracy in a D<missing VAR>W-MTJ full addersimulation.
Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia|SO|96|%|0.014285714285714285|Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.|Device initialization variation inswitching voltage is shown to be curtailed to 7% by controlling the D<missing VAR>W initialposition, which we show corresponds to 96% accuracy in a D<missing VAR>W-MTJ full addersimulation.
Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans|(F0)|28|%|0.07446808510638298|The results show that the threshold fluence (F0) for AOSis reduced significantly as a function of annealing temperature (T<missing VAR>a) rangingfrom 100C to 300C.|Specifically, a 28% reduction of F0 can be observed uponannealing at 300C, which is a critical T<missing VAR>a for MTJ fabrication.
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti|Fe2CrTe/MgO/Fe2CrTe|1000|%|0.5|Transmission profile ofthe Fe2CrTe/MgO/Fe2CrTe heterojunction has been calculated to probe it asa magnetic tunneling junction (MTJ) material in both the cubic and tetragonalphases.|Considerably large tunneling magnetoresistance ratio (TMR) of 1000% isobserved for the tetragonal phase, which is found to be one order of magnitudelarger than that of the cubic phase.
Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck|MgO|3.8|%|1.0|A large density of misfit dislocations in the Heuslerbased MTJs has been insured by a thick MgO barrier and its 3.8% latticemismatch with the Co2FeAl electrode.|A large density of misfit dislocations in the Heuslerbased MTJs has been insured by a thick MgO barrier and its 3.8% latticemismatch with the Co2FeAl electrode.
First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng|MgO|-20|%|0.13333333333333333|We perform a first-principles transport study on MTJsusing disordered electrodes modeled using the virtual crystal approximation(VCA) and ordered alloys with various MgO barrier thicknesses.|We find that10-20% Co concentration maximizes TMR using VCA to represent disorder in theelectrodes.
Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang|Mn3Sn|300|%|0.375|Usingfirst-principles calculations based on density functional theory, we predict atunneling magnetoresistance (TMR) effect as high as 300% in AFM<missing VAR> tunneljunctions with Mn3Sn electrodes, where the junction resistance depends on therelative orientation of their Neel vectors and exhibits four non-volatileresistance states.|Usingfirst-principles calculations based on density functional theory, we predict atunneling magnetoresistance (TMR) effect as high as 300% in AFM<missing VAR> tunneljunctions with Mn3Sn electrodes, where the junction resistance depends on therelative orientation of their Neel vectors and exhibits four non-volatileresistance states.
High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea|BN/Ni|1200|%|0.5|However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.|A TMR ratio as high as 1200% was observed at an energy of0.34 e<missing VAR>V, which is higher than the Fermi energy.
Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang|Fe3GeTe2/GaSe/Fe3GeTe2|192|%|0.7857142857142857|We report TMR up to 192% at 10 K in all-vdWFe3GeTe2/GaSe/Fe3GeTe2 MTJs.|We report TMR up to 192% at 10 K in all-vdWFe3GeTe2/GaSe/Fe3GeTe2 MTJs.
Unravelling the role of the interface for spin injection into organic semiconductors|Clément Barraud,Pierre Seneor,Richard Mattana,Stéphane Fusil,Karim Bouzehouane,Cyrile Deranlot,Patrizio Graziosi,Luis Hueso,Ilaria Bergenti,Valentin Dediu,Frédéric Petroff,Albert Fert|MnO3|300|%|0.6666666666666666|We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.|We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.
Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian|Co2Cr0.6Fe0.4Al|54|%|1.0|From the Julliere model a spin polarisation ofCo2Cr0.6Fe0.4Al of 54% at T<missing VAR>4K is deduced.|From the Julliere model a spin polarisation ofCo2Cr0.6Fe0.4Al of 54% at T<missing VAR>4K is deduced.
Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal|Huixin Guo,Zexin Feng,Han Yan,Jiuzhao Liu,Jia Zhang,Xiaorong Zhou,Peixin Qin,Jialin Cai,Zhongming Zeng,Xin Zhang,Xiaoning Wang,Hongyu Chen,Haojiang Wu,Chengbao Jiang,Zhiqi Liu|Mn3Ga|10|%|0.5|In thiswork, we demonstrate the giant piezoelectric strain control of the spinstructure and the anomalous Hall resistance in a noncollinear antiferromagneticmetal - D<missing VAR>019 hexagonal Mn3Ga.|Furthermore, we built tunnel junction deviceswith a diameter of 200 nm to amplify the maximum tunneling resistance ratio tomore than 10% at room-temperature, which thus implies significant potential ofnoncollinear antiferromagnets for large signal-output and high-densityantiferromagnetic spintronic device applications.
Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction|Tiancheng Song,Matisse Wei-Yuan Tu,Caitlin Carnahan,Xinghan Cai,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu|CrI3|0|%|0.061567164179104475|Here we report voltage control of TMR formed byfour-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gatedstructure.|In addition, without switching the state, the TMR can be continuouslymodulated between 17,000% and 57,000%, due to the combination of spin-dependenttunnel barrier with changing carrier distributions in the graphene contacts.
Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction|Tiancheng Song,Matisse Wei-Yuan Tu,Caitlin Carnahan,Xinghan Cai,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu|CrI3|0|%|0.07092198581560284|Here we report voltage control of TMR formed byfour-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gatedstructure.|In addition, without switching the state, the TMR can be continuouslymodulated between 17,000% and 57,000%, due to the combination of spin-dependenttunnel barrier with changing carrier distributions in the graphene contacts.
A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu|MnPt|11.2|%|0.029166666666666667|Here, we combine the two material classesto explore changes of the resistance of the high-Neel-temperatureantiferromagnet MnPt induced by piezoelectric strain.|The tunneling anisotropicmagnetoresistance reaches 11.2% at room temperature.
Spin-valve Effect in NiFe/MoS2/NiFe Junctions|Weiyi Wang,Awadhesh Narayan,Lei Tang,Kapildeb Dolui,Yanwen Liu,Xiang Yuan,Yibo Jin,Yizheng Wu,Ivan Rungger,Stefano Sanvito,Faxian Xiu|NiFe/MoS2/NiFe|0.73|%|0.09015748031496063|Spin-valve Effect in NiFe/MoS2/NiFe Junctions.|The spin-valve effect is observed up to240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures.
Spin-valve Effect in NiFe/MoS2/NiFe Junctions|Weiyi Wang,Awadhesh Narayan,Lei Tang,Kapildeb Dolui,Yanwen Liu,Xiang Yuan,Yibo Jin,Yizheng Wu,Ivan Rungger,Stefano Sanvito,Faxian Xiu|NiFe/MoS2/NiFe|9|%|0.07645764576457645|Spin-valve Effect in NiFe/MoS2/NiFe Junctions.|The experimental work is accompanied by the first principle electron transportcalculations, which reveal an MR of  9% for an ideal Py/MoS2/Py junction.
Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss|CoFeB|50|%|0.14858490566037735|the thicknessdifference of the two CoFeB layers.|Used as a soft electrode in a magnetic tunneljunction, a high tunneling magnetoresistance of about 50%, a well definedplateau and a rectangular switching behavior is achieved.
Spin Tunneling in Conducting Oxides|Alexander Bratkovsky|CrO2/TiO2|30|%|0.02087081684059014|Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2, and an account of their peculiar bandstructures is presented.|Theoretically calculated direct tunneling iniron group systems leads to about a 30% change in resistance, which is close toexperimentally observed values.
Spin Tunneling in Conducting Oxides|Alexander Bratkovsky|CrO2/TiO2|4|%|0.0017482517482517485|Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2, and an account of their peculiar bandstructures is presented.|Wefind that tunneling via resonant defect states in the barrier radicallydecreases the TMR (down to 4% with Fe-based electrodes), and a resonant tunneldiode structure would give a TMR of about 8%.
Spin Tunneling in Conducting Oxides|Alexander Bratkovsky|CrO2/TiO2|8|%|0.014227642276422765|Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2, and an account of their peculiar bandstructures is presented.|Wefind that tunneling via resonant defect states in the barrier radicallydecreases the TMR (down to 4% with Fe-based electrodes), and a resonant tunneldiode structure would give a TMR of about 8%.
Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo|Cr2Ge2Te6|300|%|0.16964285714285715|In theMTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find thereare eight stable magnetic states, leading to six distinguishable electronicresistances.|As a result, five sizable TMRs larger than 300% can be obtained(the maximum TMR is up to 620,000%).
Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo|Cr2Ge2Te6|0|%|0.27710843373493976|In theMTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find thereare eight stable magnetic states, leading to six distinguishable electronicresistances.|As a result, five sizable TMRs larger than 300% can be obtained(the maximum TMR is up to 620,000%).
A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye|CoFeB/MgO|120|%|0.5|We investigated the low temperature performance of CoFeB/MgO basedperpendicular magnetic tunnel junctions (pMTJs) by characterizing theirquasi-static switching voltage, high speed pulse write error rate and endurancedown to 9 K.|pMTJ devices exhibited high magnetoresistance (>120%) and reliable(error rate<10-4) bi-directional switching with 2 to 200 ns voltage pulses.
A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye|CoFeB/MgO|33|%|0.25|Our work demonstrates that CoFeB/MgObased pMTJs have great potential to enable cryogenic MRAM<missing VAR> and that their lowtemperature magnetization and effective magnetic anisotropy can be furtheroptimized to lower operating power and improve endurance.|The critical switching voltage at 9 K wasobserved to increase by 33% to 93%, depending on pulse duration, compared tothat at 350 K.
A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye|CoFeB/MgO|93|%|0.25|Our work demonstrates that CoFeB/MgObased pMTJs have great potential to enable cryogenic MRAM<missing VAR> and that their lowtemperature magnetization and effective magnetic anisotropy can be furtheroptimized to lower operating power and improve endurance.|The critical switching voltage at 9 K wasobserved to increase by 33% to 93%, depending on pulse duration, compared tothat at 350 K.
Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski|Co/AlO|100|%|1.0|Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.|Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.
Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider|MgO|37|%|1.0|Polycrystalline Heusler films combinedwith MgO barriers are incorporated into magnetic tunnel junctions and yield 37%magnetoresistance at room temperature.|Polycrystalline Heusler films combinedwith MgO barriers are incorporated into magnetic tunnel junctions and yield 37%magnetoresistance at room temperature.
Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito|MoS2|45|%|1.0|We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.|We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.
Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito|MoS2|300|%|0.1076388888888889|We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.|For junctions of greater thickness a maximum magnetoresistance of sim300%is obtained, which remains robust with the applied bias as long as transport isin the tunneling limit.
Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov|Fe/MgO/Fe|0|%|1.0|Our calculations also show that theemphcombination of the symmetry spin filtering effect and small surfacetransmission function in minority spin channel at the Fe/MgO interface isresponsible for large TMR>10,000% predicted for Fe/MgO/Fe MTJ for Ngeqslant 8.|Our calculations also show that theemphcombination of the symmetry spin filtering effect and small surfacetransmission function in minority spin channel at the Fe/MgO interface isresponsible for large TMR>10,000% predicted for Fe/MgO/Fe MTJ for Ngeqslant 8.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|15|%|0.5522388059701493|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|107|%|1.0|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|10|%|1.0|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|8|%|1.0|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|43|%|1.0|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.|For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|7|%|1.0|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|50|%|1.0|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|-3.9|%|1.0|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|70|%|1.0|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang|SI|30|%|1.0|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.|Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia|Fe/MgO/Ag/Mn2Au/Ta|1000|%|1.0|Giant M<missing VAR>Rs more than 1000% are predicted in someFe/MgO/Ag/Mn2Au/Ta junctions that are about the same order as that in anMgO-based ferromagnetic tunnel junction with same barrier thickness.|Giant M<missing VAR>Rs more than 1000% are predicted in someFe/MgO/Ag/Mn2Au/Ta junctions that are about the same order as that in anMgO-based ferromagnetic tunnel junction with same barrier thickness.
Current-induced switching in single ferromagnetic layer nanopillar junctions|Barbaros Oezyilmaz,Andrew D. Kent|Cu/Co/Cu|0.5|%|0.10638297872340426|Current induced magnetization dynamics in asymmetric Cu/Co/Cu single magneticlayer nanopillars has been studied experimentally at room temperature and inlow magnetic fields applied perpendicular to the thin film plane.|The current induced resistance change is 0.5%, a factor of 5 greater than theanisotropic magnetoresistance (AMR) effect.
Giant Magnetoresistance in an all-oxide spacerless junction|Mangala Prasad Singh,Baptiste Carvello,Laurent Ranno|Fe3O4|-5|%|0.5|the Fe3O4 layer has a negative spinpolarization at low temperature.|Maximum GMR (-5%) is obtained at 55K.
Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves|Robert Göckeritz,Nico Homonnay,Alexander Müller,Bodo Fuhrmann,Georg Schmidt|La0.7Sr0.3MnO3|-70|%|0.8837209302325582|The devices based on an La0.7Sr0.3MnO3/Alq3/Cotrilayer show resistive switching of up to 4-5 orders of magnitude andmagnetoresistance as high as -70% the latter even changing sign when voltagepulses are applied.|The devices based on an La0.7Sr0.3MnO3/Alq3/Cotrilayer show resistive switching of up to 4-5 orders of magnitude andmagnetoresistance as high as -70% the latter even changing sign when voltagepulses are applied.
Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson|Ni/NiO/Ni|10|%|0.20270270270270271|Toconfirm the magnetic switching characteristics and spin injection efficiency ofthe Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Nimagnetic tunnel junction with asymmetric dimensions of the electrodes similarto those of the SE<missing VAR>Ts.|Magnetoresistance measurements on the test deviceexhibited clear signs of magnetic reversal and a maximum TMR of 10%, from whichwe deduced a spin-polarization of about 22% in the Ni electrodes.
Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson|Ni/NiO/Ni|22|%|0.03608247422680412|Toconfirm the magnetic switching characteristics and spin injection efficiency ofthe Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Nimagnetic tunnel junction with asymmetric dimensions of the electrodes similarto those of the SE<missing VAR>Ts.|Magnetoresistance measurements on the test deviceexhibited clear signs of magnetic reversal and a maximum TMR of 10%, from whichwe deduced a spin-polarization of about 22% in the Ni electrodes.
Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal|RuO2|500|%|1.0|Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.|Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang|SO|70|%|1.0|We also compare our device to aSTT-MRAM<missing VAR> cell built with the same architecture and show that critical writecurrent in the SOT-MRAM<missing VAR> cell is reduced by more than 70%.|We also compare our device to aSTT-MRAM<missing VAR> cell built with the same architecture and show that critical writecurrent in the SOT-MRAM<missing VAR> cell is reduced by more than 70%.
Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü|Te2/Fe3GeTe2|2000|%|0.041237113402061855|Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.|Agiant magnetoresistance of around 2000% and R<missing VAR>A less than 0.3 Omega mum<missing VAR>2have been found in the proposed vdW CPP GMR.
Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü|Fe3GeTe2|20|%|1.0|The calculated AMR is found to be around 20% inFe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR.|The calculated AMR is found to be around 20% inFe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR.
Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs|Fe/ZnSe/Fe|100|%|0.023529411764705882|We present it ab initio calculations of the spin-dependent electronictransport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situationof a spin-injection experiment.|We show that the bulkband structure of the leads and of the semiconductor, and even more theelectronic structure of a clean and abrupt interface, are responsible for acurrent polarisation and a magnetoresistance ratio of almost the ideal 100%, ifthe transport is ballistic.
Thin-Film Trilayer Manganate Junctions|Jonathan Z. Sun|La0.67Sr0.33MnO|3|%|1.0|The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.|The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.
Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao|ZnO|4.86|%|0.76|The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.|The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.
Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao|ZnO|6.05|%|0.8421052631578947|The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.|The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.
Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström|SrTiO3|-1.5|%|0.45555555555555555|STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.|Themeasurements reveal two types of low field magnetoresistance (LFMR) with amagnitude of sim 0.1-1.5%.
