Co
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(48, 48)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 73, '%', 1],[77.0, 323, '%', 1],[157.0, 65, '%', 3],[166.0, 173, '%', 3],[176.0, 78, '%', 3]

Fe
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(50, 50)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 73, '%', 1],[75.0, 323, '%', 1],[155.0, 65, '%', 3],[164.0, 173, '%', 3],[174.0, 78, '%', 3]

B
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(52, 52)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 73, '%', 1],[73.0, 323, '%', 1],[153.0, 65, '%', 3],[162.0, 173, '%', 3],[172.0, 78, '%', 3]

Co
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(58, 58)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 73, '%', 1],[67.0, 323, '%', 1],[147.0, 65, '%', 3],[156.0, 173, '%', 3],[166.0, 78, '%', 3]

Fe
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(60, 60)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 73, '%', 1],[65.0, 323, '%', 1],[145.0, 65, '%', 3],[154.0, 173, '%', 3],[164.0, 78, '%', 3]

B
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(62, 62)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 73, '%', 1],[63.0, 323, '%', 1],[143.0, 65, '%', 3],[152.0, 173, '%', 3],[162.0, 78, '%', 3]

In
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(173, 173)
 In these systems, the tunnelmagnetoresistance ratios at optimum annealing temperatures were found to be 65%for alumina, 173% for magnesia, and 78% for the composite tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 73, '%', 2],[48.0, 323, '%', 2],[32.0, 65, '%', 0],[41.0, 173, '%', 0],[51.0, 78, '%', 0]

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(447, 448)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 20, '%', 1]

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(470, 471)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 20, '%', 1]

MgO
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(500, 501)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 20, '%', 1]

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(539, 540)
 The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 20, '%', 0]

FeRh/MgO
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(613, 617)
 Both the polarityand magnitude of the phase transition tunneling anisotropic magnetoresistancecan be modulated by interfacial engineering at the alfa-FeRh/MgO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 20, '%', 1]

EuS
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(696, 697)
Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(706, 706)
 In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnelbarrier between Al and Co electrodes, we observed large magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuS
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(727, 728)
 In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnelbarrier between Al and Co electrodes, we observed large magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(741, 741)
 In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnelbarrier between Al and Co electrodes, we observed large magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(745, 745)
 In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnelbarrier between Al and Co electrodes, we observed large magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuS
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(853, 854)
 Thisbehavior can be understood as due to Fowler-Nordheim tunneling through thefully spin-polarized EuS conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(863, 863)
 The I-V characteristics and biasdependence of MR calculated using tunneling theory shows excellent agreementwith experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(865, 865)
 The I-V characteristics and biasdependence of MR calculated using tunneling theory shows excellent agreementwith experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tunnel magnetoresistance and interfacial electronic state|J. Inoue,H. Itoh###
(1100, 1100)
 The results are compared with experimental results for Cr-dustedferromagnetic tunnel junctions, and also with results for metallic multilayersfor which similar reduction in giant magnetoresistance has been reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Gigantic tunneling magnetoresistance in magnetic Weyl semimetal tunnel junctions|D. J. P. de Sousa,C. O. Ascencio,P. M. Haney,J. P. Wang,Tony Low###
(1356, 1356)
 In addition, we show that theFermi arc states give rise to a non-monotonic dependence of conductance on themisalignment angle between the magnetizations of the two contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1434, 1435)
Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1473, 1473)
 We prepared magnetic tunnel junctions with one ferromagnetic and onesuperconducting Al-Si electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1475, 1475)
 We prepared magnetic tunnel junctions with one ferromagnetic and onesuperconducting Al-Si electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1495, 1495)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1497, 1497)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1499, 1499)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1511, 1514)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1623, 1623)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1625, 1625)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1627, 1627)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1630, 1631)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1634, 1634)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1636, 1636)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(1638, 1638)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFeB
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(1698, 1703)
 Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are ofparticular interest for magnetic random-access memories because of theirexcellent thermal stability, scaling potential, and power dissipation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[153.0, 249, '%', 2],[178.0, 2, ',', 3],[312.0, 3.0, 'MA', 5],[325.0, 45, 'nm', 6]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(1895, 1895)
mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 249, '%', 1],[14.0, 2, ',', 0],[120.0, 3.0, 'MA', 2],[133.0, 45, 'nm', 3]

MgO/CoFeB
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(1903, 1908)
mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[47.0, 249, '%', 1],[22.0, 2, ',', 0],[107.0, 3.0, 'MA', 2],[120.0, 45, 'nm', 3]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(1934, 1934)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 249, '%', 2],[53.0, 2, ',', 1],[81.0, 3.0, 'MA', 1],[94.0, 45, 'nm', 2]

Ta
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(1962, 1962)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 249, '%', 2],[81.0, 2, ',', 1],[53.0, 3.0, 'MA', 1],[66.0, 45, 'nm', 2]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(1979, 1979)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 249, '%', 2],[98.0, 2, ',', 1],[36.0, 3.0, 'MA', 1],[49.0, 45, 'nm', 2]

Fe
###Ab initio description of tunnel junctions|Peter Zahn,Ingrid Mertig###
(2093, 2093)
 Based on spin-density functional theory we calculate the electronic structureof a tunnel junction consisting of two magnetic Fe layers separated by aninsulating vacuum barrier selfconsistently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PV)
###The Effects of Resonant Tunneling on Magnetoresistance through a Q uantum Dot|Tetsufumi Tanamoto,Shinobu Fujita###
(2409, 2412)
 We alsofound that the peak current-valley current (PV) ratio decreases when thejunction conductance increases.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti1-x
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(2486, 2489)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[56.0, 15, 'K', 0]

O2-d
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(2491, 2494)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[51.0, 15, 'K', 0]

Fe0.1Co0.9
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(2502, 2505)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.9,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 15, 'K', 0]

Al
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(2512, 2512)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 15, 'K', 0]

Ti1-x
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(2552, 2555)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 15, 'K', 0]

O2-d
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(2557, 2560)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[12.0, 15, 'K', 0]

K
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(2603, 2603)
 The TMR decreased with increasing temperature and vanished above 180K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 15, 'K', 1]

Co2FeSi
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(2685, 2688)
High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 15, 'K', 2]

Fe2CoSi
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(2692, 2695)
High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 15, 'K', 2]

Fe1
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(2714, 2715)
 Magnetic tunnel junctions with Fe1x<missing VAR>Co2-xSi (0 < x<missing VAR> < 1) electrodes and MgObarrier were prepared on MgO substrates by magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 15, 'K', 1]

Co2-xSi
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(2717, 2721)
 Magnetic tunnel junctions with Fe1x<missing VAR>Co2-xSi (0 < x<missing VAR> < 1) electrodes and MgObarrier were prepared on MgO substrates by magnetron co-sputtering.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[66.0, 15, 'K', 1]

MgO
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(2739, 2740)
 Magnetic tunnel junctions with Fe1x<missing VAR>Co2-xSi (0 < x<missing VAR> < 1) electrodes and MgObarrier were prepared on MgO substrates by magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 15, 'K', 1]

MgO
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(2751, 2752)
 Magnetic tunnel junctions with Fe1x<missing VAR>Co2-xSi (0 < x<missing VAR> < 1) electrodes and MgObarrier were prepared on MgO substrates by magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 15, 'K', 1]

La0.67Sr0.33MnO3
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(2948, 2954)
 We experimentally investigate the structural, magnetic and electricaltransport properties of La0.67Sr0.33MnO3 based magnetic tunneljunctions with a SrSnO3 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 350, '%', 1]

SrSnO3
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(2969, 2972)
 We experimentally investigate the structural, magnetic and electricaltransport properties of La0.67Sr0.33MnO3 based magnetic tunneljunctions with a SrSnO3 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 350, '%', 1]

STiO3
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(3052, 3055)
 Our results show that despite the largenumber of defects in the strontium stannate barrier, due to the large latticemismatch, the observed tunnel magnetoresistance is comparable to tunneljunctions with a better lattice matched STiO3 barrier, reaching values of upto 350% at T<missing VAR>5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 350, '%', 0]

K
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(3079, 3079)
 Our results show that despite the largenumber of defects in the strontium stannate barrier, due to the large latticemismatch, the observed tunnel magnetoresistance is comparable to tunneljunctions with a better lattice matched STiO3 barrier, reaching values of upto 350% at T<missing VAR>5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 350, '%', 0]

In
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(3147, 3147)
 Inaddition, the observed TMR vanishes for T<missing VAR>>200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 350, '%', 2]

K
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(3169, 3169)
 Inaddition, the observed TMR vanishes for T<missing VAR>>200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 350, '%', 2]

CoPtMgOPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(3268, 3272)
Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPtMgOPt Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 175, '%', 3]

CoPtMgOPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(3306, 3310)
 We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effectin a realistically-modeled CoPtMgOPt tunnel junction using coherent transportcalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 175, '%', 2]

CoPtMgOCoPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(3347, 3352)
 For comparison we study the tunneling magneto-Seebeck effect inCoPtMgOCoPt as well.
Featurization terminated normally.
0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 175, '%', 1]

CoPtMgOPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(3375, 3379)
 We find that the magneto-Seebeck ratio of CoPtMgOPtexceeds that of CoPtMgOCoPt for small barrier thicknesses, reaching 175% atroom temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 175, '%', 0]

CoPtMgOCoPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(3388, 3393)
 We find that the magneto-Seebeck ratio of CoPtMgOPtexceeds that of CoPtMgOCoPt for small barrier thicknesses, reaching 175% atroom temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 175, '%', 0]

CoPtMgOPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(3560, 3564)
 We reportthat this difference in origin allows for CoPtMgOPt to possess strong thermalmagnetic-transport anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 175, '%', 4]

La2
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(3668, 3669)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 24, '%', 2],[171.0, 10, 'K', 2],[210.0, 280, 'K', 2]

Sr1
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(3672, 3673)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 24, '%', 2],[167.0, 10, 'K', 2],[206.0, 280, 'K', 2]

MnO3
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(3676, 3678)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 24, '%', 2],[162.0, 10, 'K', 2],[201.0, 280, 'K', 2]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(3684, 3684)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 24, '%', 2],[156.0, 10, 'K', 2],[195.0, 280, 'K', 2]

La2NiMnO6
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(3696, 3701)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 24, '%', 2],[139.0, 10, 'K', 2],[178.0, 280, 'K', 2]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(3707, 3707)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 24, '%', 2],[133.0, 10, 'K', 2],[172.0, 280, 'K', 2]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(3766, 3766)
 Theresistance of the junction is strongly dependent not only on the orientation ofthe magnetic moments in LSMO electrodes, but also on the direction of themagnetization of the LNMO barrier with respect to that of LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 24, '%', 1],[74.0, 10, 'K', 1],[113.0, 280, 'K', 1]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(3795, 3795)
 Theresistance of the junction is strongly dependent not only on the orientation ofthe magnetic moments in LSMO electrodes, but also on the direction of themagnetization of the LNMO barrier with respect to that of LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 24, '%', 1],[45.0, 10, 'K', 1],[84.0, 280, 'K', 1]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(3812, 3812)
 Theresistance of the junction is strongly dependent not only on the orientation ofthe magnetic moments in LSMO electrodes, but also on the direction of themagnetization of the LNMO barrier with respect to that of LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 24, '%', 1],[28.0, 10, 'K', 1],[67.0, 280, 'K', 1]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(3876, 3876)
 The ratio oftunnel magnetoresistance reaches a maximum value of 24% at 10 K, and itdecreases with temperature until it completely disappears above the criticaltemperature of LNMO at 280 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 24, '%', 0],[36.0, 10, 'K', 0],[3.0, 280, 'K', 0]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(3922, 3922)
 The tunneling process is described using amechanism which involves both empty and filled eg states of the LNMO barrieracting as a spin-filter.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 24, '%', 1],[82.0, 10, 'K', 1],[43.0, 280, 'K', 1]

P
###Superpoissonian shot noise in organic magnetic tunnel junctions|Juan Pedro Cascales,Jhen-Yong Hong,Isidoro Martinez,Minn-Tsong Lin,Tomasz Szczepanski,Vitalii K. Dugaev,Jozef Barnas,Farkad G. Aliev###
(4078, 4078)
 Here we investigate conductance and shotnoise in magnetic tunnel junctions with PTCDA barriers a few nm thick.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 10, 'and', 1],[43.0, 40, '%', 1]

P
###Superpoissonian shot noise in organic magnetic tunnel junctions|Juan Pedro Cascales,Jhen-Yong Hong,Isidoro Martinez,Minn-Tsong Lin,Tomasz Szczepanski,Vitalii K. Dugaev,Jozef Barnas,Farkad G. Aliev###
(4248, 4248)
 We explain our main findings in terms of a model which includestunneling through a two level (or multilevel) system, originated frominterfacial bonds of the PTCDA molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 10, 'and', 2],[127.0, 40, '%', 2]

S
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(4400, 4400)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(4410, 4410)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(4412, 4412)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As/AlAs
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(4414, 4417)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ga
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(4420, 4420)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(4422, 4422)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(4424, 4424)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(4524, 4524)
 It is also shown that the TMR ratiohas a strong dependence on both the itinerant-carrier density and the magneticion density in the DMS electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al2O3/NiFe
###Room temperature tunneling anisotropic and collinear magnetoresistance|A. N. Grigorenko,K. S. Novoselov,D. J. Mapps###
(4609, 4617)
 We report a room temperature tunneling anisotropic magnetoresistance inCo/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior toforming the Al2O3 layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Al2O3
###Room temperature tunneling anisotropic and collinear magnetoresistance|A. N. Grigorenko,K. S. Novoselov,D. J. Mapps###
(4638, 4641)
 We report a room temperature tunneling anisotropic magnetoresistance inCo/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior toforming the Al2O3 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4/MgO/Fe
###Tunnel magnetoresistance of Fe3O4/MgO/Fe nanostructures|S. G. Chigarev,E. M. Epshtein,I. V. Malikov,G. M. Mikhailov,P. E. Zilberman###
(4762, 4770)
Tunnel magnetoresistance of Fe3O4/MgO/Fe nanostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe3O4/MgO/Fe
###Tunnel magnetoresistance of Fe3O4/MgO/Fe nanostructures|S. G. Chigarev,E. M. Epshtein,I. V. Malikov,G. M. Mikhailov,P. E. Zilberman###
(4783, 4791)
 A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation isconsidered.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Tunnel magnetoresistance of Fe3O4/MgO/Fe nanostructures|S. G. Chigarev,E. M. Epshtein,I. V. Malikov,G. M. Mikhailov,P. E. Zilberman###
(4882, 4882)
 In contrast with junctions with unidirectional anisotropy, asubstantially lower magnetic field is required for the junction switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2Cr0.6Fe0.4Al/MgO/CoFe
###Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions|A. D. Rata,H. Braak,D. E. Buergler,C. M. Schneider###
(4939, 4951)
Large inverse tunneling magnetoresistance in Co2Cr0.6Fe0.4Al/MgO/CoFe magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[92.0, -66, '%', 2],[110.0, -84, '%', 3],[116.0, 20, 'K', 3]

Co2Cr0.6Fe0.4Al/MgO/CoFe
###Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions|A. D. Rata,H. Braak,D. E. Buergler,C. M. Schneider###
(4975, 4987)
 Magnetic tunnel junctions with the layer sequenceCo2Cr0.6Fe0.4Al/MgO/CoFe were fabricated by magnetron sputteringat room temperature (RT).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[56.0, -66, '%', 1],[74.0, -84, '%', 2],[80.0, 20, 'K', 2]

V
###Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions|A. D. Rata,H. Braak,D. E. Buergler,C. M. Schneider###
(5122, 5122)
 The dependence on thevoltage drop shows an unusual behavior with two almost symmetric peaks atpm600 m<missing VAR>V with large inverse TMR ratios and small positive values around zerobias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, -66, '%', 2],[61.0, -84, '%', 1],[55.0, 20, 'K', 1]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5170, 5171)
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 10, 'mTorr', 2],[155.0, 355, '%', 3],[166.0, 578, '%', 3],[170.0, 5, 'K', 3],[182.0, 325, 'C', 3],[307.0, 10, 'ohm', 4],[314.0, 27, '%', 4],[322.0, 0.8, 'ohm', 4],[325.0, 2, ',', 4],[328.0, 77, '%', 4],[343.0, 2, ',', 4],[346.0, 130, '%', 4],[354.0, 1.7, 'ohm', 4],[357.0, 2, ',', 4],[362.0, 165, '%', 4],[370.0, 2.9, 'ohm', 4]

Ar
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5183, 5183)
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 10, 'mTorr', 2],[143.0, 355, '%', 3],[154.0, 578, '%', 3],[158.0, 5, 'K', 3],[170.0, 325, 'C', 3],[295.0, 10, 'ohm', 4],[302.0, 27, '%', 4],[310.0, 0.8, 'ohm', 4],[313.0, 2, ',', 4],[316.0, 77, '%', 4],[331.0, 2, ',', 4],[334.0, 130, '%', 4],[342.0, 1.7, 'ohm', 4],[345.0, 2, ',', 4],[350.0, 165, '%', 4],[358.0, 2.9, 'ohm', 4]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5189, 5190)
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 10, 'mTorr', 2],[136.0, 355, '%', 3],[147.0, 578, '%', 3],[151.0, 5, 'K', 3],[163.0, 325, 'C', 3],[288.0, 10, 'ohm', 4],[295.0, 27, '%', 4],[303.0, 0.8, 'ohm', 4],[306.0, 2, ',', 4],[309.0, 77, '%', 4],[324.0, 2, ',', 4],[327.0, 130, '%', 4],[335.0, 1.7, 'ohm', 4],[338.0, 2, ',', 4],[343.0, 165, '%', 4],[351.0, 2.9, 'ohm', 4]

CoFeB/MgO/CoFeB
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5212, 5221)
 We investigated dependence of tunnel magnetoresistance effect inCoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barriersputtering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[45.0, 10, 'mTorr', 1],[105.0, 355, '%', 2],[116.0, 578, '%', 2],[120.0, 5, 'K', 2],[132.0, 325, 'C', 2],[257.0, 10, 'ohm', 3],[264.0, 27, '%', 3],[272.0, 0.8, 'ohm', 3],[275.0, 2, ',', 3],[278.0, 77, '%', 3],[293.0, 2, ',', 3],[296.0, 130, '%', 3],[304.0, 1.7, 'ohm', 3],[307.0, 2, ',', 3],[312.0, 165, '%', 3],[320.0, 2.9, 'ohm', 3]

Ar
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5231, 5231)
 We investigated dependence of tunnel magnetoresistance effect inCoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barriersputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 10, 'mTorr', 1],[95.0, 355, '%', 2],[106.0, 578, '%', 2],[110.0, 5, 'K', 2],[122.0, 325, 'C', 2],[247.0, 10, 'ohm', 3],[254.0, 27, '%', 3],[262.0, 0.8, 'ohm', 3],[265.0, 2, ',', 3],[268.0, 77, '%', 3],[283.0, 2, ',', 3],[286.0, 130, '%', 3],[294.0, 1.7, 'ohm', 3],[297.0, 2, ',', 3],[302.0, 165, '%', 3],[310.0, 2.9, 'ohm', 3]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5237, 5238)
 We investigated dependence of tunnel magnetoresistance effect inCoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barriersputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 10, 'mTorr', 1],[88.0, 355, '%', 2],[99.0, 578, '%', 2],[103.0, 5, 'K', 2],[115.0, 325, 'C', 2],[240.0, 10, 'ohm', 3],[247.0, 27, '%', 3],[255.0, 0.8, 'ohm', 3],[258.0, 2, ',', 3],[261.0, 77, '%', 3],[276.0, 2, ',', 3],[279.0, 130, '%', 3],[287.0, 1.7, 'ohm', 3],[290.0, 2, ',', 3],[295.0, 165, '%', 3],[303.0, 2.9, 'ohm', 3]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5252, 5253)
 Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorrresulted in smooth surface and highly (001) oriented MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 10, 'mTorr', 0],[73.0, 355, '%', 1],[84.0, 578, '%', 1],[88.0, 5, 'K', 1],[100.0, 325, 'C', 1],[225.0, 10, 'ohm', 2],[232.0, 27, '%', 2],[240.0, 0.8, 'ohm', 2],[243.0, 2, ',', 2],[246.0, 77, '%', 2],[261.0, 2, ',', 2],[264.0, 130, '%', 2],[272.0, 1.7, 'ohm', 2],[275.0, 2, ',', 2],[280.0, 165, '%', 2],[288.0, 2.9, 'ohm', 2]

Ar
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5261, 5261)
 Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorrresulted in smooth surface and highly (001) oriented MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 10, 'mTorr', 0],[65.0, 355, '%', 1],[76.0, 578, '%', 1],[80.0, 5, 'K', 1],[92.0, 325, 'C', 1],[217.0, 10, 'ohm', 2],[224.0, 27, '%', 2],[232.0, 0.8, 'ohm', 2],[235.0, 2, ',', 2],[238.0, 77, '%', 2],[253.0, 2, ',', 2],[256.0, 130, '%', 2],[264.0, 1.7, 'ohm', 2],[267.0, 2, ',', 2],[272.0, 165, '%', 2],[280.0, 2.9, 'ohm', 2]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5287, 5288)
 Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorrresulted in smooth surface and highly (001) oriented MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 10, 'mTorr', 0],[38.0, 355, '%', 1],[49.0, 578, '%', 1],[53.0, 5, 'K', 1],[65.0, 325, 'C', 1],[190.0, 10, 'ohm', 2],[197.0, 27, '%', 2],[205.0, 0.8, 'ohm', 2],[208.0, 2, ',', 2],[211.0, 77, '%', 2],[226.0, 2, ',', 2],[229.0, 130, '%', 2],[237.0, 1.7, 'ohm', 2],[240.0, 2, ',', 2],[245.0, 165, '%', 2],[253.0, 2.9, 'ohm', 2]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5295, 5296)
 Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 10, 'mTorr', 1],[30.0, 355, '%', 0],[41.0, 578, '%', 0],[45.0, 5, 'K', 0],[57.0, 325, 'C', 0],[182.0, 10, 'ohm', 1],[189.0, 27, '%', 1],[197.0, 0.8, 'ohm', 1],[200.0, 2, ',', 1],[203.0, 77, '%', 1],[218.0, 2, ',', 1],[221.0, 130, '%', 1],[229.0, 1.7, 'ohm', 1],[232.0, 2, ',', 1],[237.0, 165, '%', 1],[245.0, 2.9, 'ohm', 1]

CoFeB
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5383, 5385)
 Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 10, 'mTorr', 1],[57.0, 355, '%', 0],[46.0, 578, '%', 0],[42.0, 5, 'K', 0],[30.0, 325, 'C', 0],[93.0, 10, 'ohm', 1],[100.0, 27, '%', 1],[108.0, 0.8, 'ohm', 1],[111.0, 2, ',', 1],[114.0, 77, '%', 1],[129.0, 2, ',', 1],[132.0, 130, '%', 1],[140.0, 1.7, 'ohm', 1],[143.0, 2, ',', 1],[148.0, 165, '%', 1],[156.0, 2.9, 'ohm', 1]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5404, 5405)
 Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 10, 'mTorr', 1],[78.0, 355, '%', 0],[67.0, 578, '%', 0],[63.0, 5, 'K', 0],[51.0, 325, 'C', 0],[73.0, 10, 'ohm', 1],[80.0, 27, '%', 1],[88.0, 0.8, 'ohm', 1],[91.0, 2, ',', 1],[94.0, 77, '%', 1],[109.0, 2, ',', 1],[112.0, 130, '%', 1],[120.0, 1.7, 'ohm', 1],[123.0, 2, ',', 1],[128.0, 165, '%', 1],[136.0, 2.9, 'ohm', 1]

Au
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5433, 5433)
 Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 10, 'mTorr', 2],[107.0, 355, '%', 1],[96.0, 578, '%', 1],[92.0, 5, 'K', 1],[80.0, 325, 'C', 1],[45.0, 10, 'ohm', 0],[52.0, 27, '%', 0],[60.0, 0.8, 'ohm', 0],[63.0, 2, ',', 0],[66.0, 77, '%', 0],[81.0, 2, ',', 0],[84.0, 130, '%', 0],[92.0, 1.7, 'ohm', 0],[95.0, 2, ',', 0],[100.0, 165, '%', 0],[108.0, 2.9, 'ohm', 0]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(5448, 5449)
 Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 10, 'mTorr', 2],[122.0, 355, '%', 1],[111.0, 578, '%', 1],[107.0, 5, 'K', 1],[95.0, 325, 'C', 1],[29.0, 10, 'ohm', 0],[36.0, 27, '%', 0],[44.0, 0.8, 'ohm', 0],[47.0, 2, ',', 0],[50.0, 77, '%', 0],[65.0, 2, ',', 0],[68.0, 130, '%', 0],[76.0, 1.7, 'ohm', 0],[79.0, 2, ',', 0],[84.0, 165, '%', 0],[92.0, 2.9, 'ohm', 0]

In
###Tunnel magnetoresistance in scandium nitride magnetic tunnel junctions using first principles|Suyogya Karki,Vivian Rogers,Priyamvada Jadaun,Daniel S. Marshall,Jean Anne C. Incorvia###
(5628, 5628)
 In state-of-the-art magnetic tunnel junctions, magnesium oxide isused as the tunnel barrier between magnetic electrodes, providing a uniquelylarge tunnel magnetoresistance at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/ScN/Fe
###Tunnel magnetoresistance in scandium nitride magnetic tunnel junctions using first principles|Suyogya Karki,Vivian Rogers,Priyamvada Jadaun,Daniel S. Marshall,Jean Anne C. Incorvia###
(5825, 5830)
 Thesesimulations demonstrate a high tunnel magnetoresistance in Fe/ScN/Fe MTJs viaDelta1 and Delta2 symmetry filtering with low wavefunction decayrates, allowing a low resistance-area product.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Tunneling Magnetoresistance in Junctions Composed of Ferromagnets and Time-Reversal Invariant Topological Superconductors|Zhongbo Yan,Shaolong Wan###
(5992, 5992)
 In this work, we show that tunnelingmagnetoresistance can also emerge in junctions composed of ferromagnets andtime-reversal invariant topological superconductors without spin-rotationsymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(MnAs)
###Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions|M. Zhu,M. J. Wilson,P. Mitra,P. Schiffer,N. Samarth###
(6398, 6401)
 We report a large, quasi-reversible tunnel magnetoresistance inexchange-biased ferromagnetic semiconductor tunnel junctions wherein a softferromagnetic semiconductor (gma) is exchange coupled to a hard ferromagneticmetal (MnAs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers|W. G. Wang,C. Ni,A. Ozbay,L. R. Shah,X. Fan,X. M. Kou,E. R. Nowak,J. Q. Xiao###
(6520, 6521)
Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers|W. G. Wang,C. Ni,A. Ozbay,L. R. Shah,X. Fan,X. M. Kou,E. R. Nowak,J. Q. Xiao###
(6542, 6543)
 Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier werefabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/ZnTe/Fe
###Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers|W. G. Wang,C. Ni,A. Ozbay,L. R. Shah,X. Fan,X. M. Kou,E. R. Nowak,J. Q. Xiao###
(6578, 6583)
 A very low barrier height and sizable magnetoresistance wereobserved in the Fe/ZnTe/Fe junctions at room temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers|W. G. Wang,C. Ni,A. Ozbay,L. R. Shah,X. Fan,X. M. Kou,E. R. Nowak,J. Q. Xiao###
(6598, 6598)
 The nonlinear I-Vcharacteristic curve confirmed the observed magnetoresistance is due tospin-dependent tunneling effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers|W. G. Wang,C. Ni,A. Ozbay,L. R. Shah,X. Fan,X. M. Kou,E. R. Nowak,J. Q. Xiao###
(6600, 6600)
 The nonlinear I-Vcharacteristic curve confirmed the observed magnetoresistance is due tospin-dependent tunneling effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetoresistance of atomic-scale electromigrated nickel nanocontacts|Z. K. Keane,L. H. Yu,D. Natelson###
(6814, 6814)
 As junction size is decreased to the singlechannel limit, conventional anisotropic magnetoresistance (AMR) increases inmagnitude, approaching the size expected for tunneling magnetoresistance (TMR)upon tunnel junction formation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(6954, 6954)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(6958, 6958)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(6972, 6977)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(6998, 6998)
 We report on systematic ab-initio investigations of Co and Cr interlayersembedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on thechanges of the electronic structure and the transport properties withinterlayer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(7002, 7002)
 We report on systematic ab-initio investigations of Co and Cr interlayersembedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on thechanges of the electronic structure and the transport properties withinterlayer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(7145, 7145)
 The resistance area products and the tunnelmagnetoresistance ratios show a monotonous trend with distinct oscillations asa function of the Cr thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(7179, 7179)
 These modulations are directly addressed andinterpreted by means of magnetic structures in the Cr films and by complex bandstructure effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(7205, 7205)
 The characteristics for embedded Co interlayers areconsiderably influenced by interface resonances which are analyzed by the localelectronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs/Fe
###Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: spin-orbit coupling in magnetic tunnel junctions|Alex Matos-Abiague,Jaroslav Fabian###
(7694, 7699)
 Modelcalculations for Fe/GaAs/Fe tunnel junctions are presented.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

InAs
###Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads|K. Hamaya,S. Masubuchi,M. Kawamura,T. Machida,M. Jung,K. Shibata,K. Hirakawa,T. Taniyama,S. Ishida,Y. Arakawa###
(7788, 7789)
Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs
###Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads|K. Hamaya,S. Masubuchi,M. Kawamura,T. Machida,M. Jung,K. Shibata,K. Hirakawa,T. Taniyama,S. Ishida,Y. Arakawa###
(7843, 7844)
 We have fabricated a lateral double barrier magnetic tunnel junction (MTJ)which consists of a single self-assembled InAs quantum dot (QD) withferromagnetic Co leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads|K. Hamaya,S. Masubuchi,M. Kawamura,T. Machida,M. Jung,K. Shibata,K. Hirakawa,T. Taniyama,S. Ishida,Y. Arakawa###
(7860, 7860)
 We have fabricated a lateral double barrier magnetic tunnel junction (MTJ)which consists of a single self-assembled InAs quantum dot (QD) withferromagnetic Co leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Effect of Image Potential on Spin Polarized Transport through Magnetic Tunnel Junctions|Tehseen Zahra Raza,Hassan Raza###
(8006, 8011)
 We study the effect of image potential on spin polarized transport throughFe/MgO/Fe magnetic tunnel junctions in the presence of symmetry filtering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(8203, 8204)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 4, 'K', 2],[185.0, 270, 'K', 4]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(8207, 8208)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4, 'K', 2],[181.0, 270, 'K', 4]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(8211, 8213)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 4, 'K', 2],[176.0, 270, 'K', 4]

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(8234, 8235)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 4, 'K', 1],[154.0, 270, 'K', 3]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(8238, 8239)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4, 'K', 1],[150.0, 270, 'K', 3]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(8242, 8244)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 4, 'K', 1],[145.0, 270, 'K', 3]

SrTiO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(8248, 8251)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 4, 'K', 1],[138.0, 270, 'K', 3]

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(8256, 8257)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4, 'K', 1],[132.0, 270, 'K', 3]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(8260, 8261)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 4, 'K', 1],[128.0, 270, 'K', 3]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(8264, 8266)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 4, 'K', 1],[123.0, 270, 'K', 3]

Fe3GeTe2/Fe3GeTe2
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8454, 8464)
Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[282.0, 0.05, '%', 6]

W
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8485, 8485)
 Controlling the stacking of van der Waals (vdW) materials is found to produceexciting new findings, since hetero- or homo- structures have added the diversepossibility of assembly and manipulated functionalities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 0.05, '%', 5]

W
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8570, 8570)
 However, so far, thehomostructure with a twisted angle based on the magnetic vdW materials remainsunexplored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 0.05, '%', 4]

W
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8594, 8594)
 Here, we achieved a twisted magnetic vdW Fe3GeTe2/Fe3GeTe2 junctionwith broken crystalline symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 0.05, '%', 3]

Fe3GeTe2/Fe3GeTe2
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8596, 8606)
 Here, we achieved a twisted magnetic vdW Fe3GeTe2/Fe3GeTe2 junctionwith broken crystalline symmetry.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[140.0, 0.05, '%', 3]

W
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8629, 8629)
 A clean and metallic vdW junction isevidenced by the temperature-dependent resistance and the linear I-V curve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.05, '%', 2]

I
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8654, 8654)
 A clean and metallic vdW junction isevidenced by the temperature-dependent resistance and the linear I-V curve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0.05, '%', 2]

V
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8656, 8656)
 A clean and metallic vdW junction isevidenced by the temperature-dependent resistance and the linear I-V curve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.05, '%', 2]

F
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8668, 8668)
Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed inthe magnetotransport of our homojunction due to the antiparallel magneticconfigurations of the two FGT layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 0.05, '%', 1]

P
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8682, 8682)
Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed inthe magnetotransport of our homojunction due to the antiparallel magneticconfigurations of the two FGT layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.05, '%', 1]

F
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8723, 8723)
Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed inthe magnetotransport of our homojunction due to the antiparallel magneticconfigurations of the two FGT layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.05, '%', 1]

P
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8732, 8732)
 The PMR ratio is found to be 0.05% andgets monotonically enhanced as temperature decreases like a metallic giantmagnetoresistance (GMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.05, '%', 0]

P
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8788, 8788)
 Such a tiny PMR ratio is at least three orders ofmagnitude smaller than the tunneling magnetoresistance (TMR) ratio, justifyingour clean metallic junction without a spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.05, '%', 1]

W
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(8883, 8883)
 Our findings demonstrate thefeasibility of the controllable homostructure and shed light on futurespintronics using magnetic vdW materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.05, '%', 2]

MgO
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(8914, 8915)
Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 355, '%', 2],[236.0, 450, '%', 5],[243.0, 450, 'degree', 5]

MgO
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(8961, 8962)
 We investigated the relationship between the tunnel magnetoresistance (TMR)ratio and the electrode structure in MgO-barrier magnetic tunnel junctions(MTJs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 355, '%', 1],[189.0, 450, '%', 4],[196.0, 450, 'degree', 4]

Co40Fe40B20
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(8998, 9003)
 The TMR ratio in a MTJ with Co40Fe40B20 reference and free layersreached 355% at the post-deposition annealing temperature of Ta400 degree C.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 355, '%', 0],[148.0, 450, '%', 3],[155.0, 450, 'degree', 3]

Ta400
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(9033, 9034)
 The TMR ratio in a MTJ with Co40Fe40B20 reference and free layersreached 355% at the post-deposition annealing temperature of Ta400 degree C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 355, '%', 0],[117.0, 450, '%', 3],[124.0, 450, 'degree', 3]

C
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(9038, 9038)
 The TMR ratio in a MTJ with Co40Fe40B20 reference and free layersreached 355% at the post-deposition annealing temperature of Ta400 degree C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 355, '%', 0],[113.0, 450, '%', 3],[120.0, 450, 'degree', 3]

Co50Fe50
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(9044, 9047)
When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMRratio was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 355, '%', 1],[104.0, 450, '%', 2],[111.0, 450, 'degree', 2]

Co90Fe10
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(9051, 9054)
When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMRratio was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.9,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 355, '%', 1],[97.0, 450, '%', 2],[104.0, 450, 'degree', 2]

MgO
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(9118, 9119)
 The key to have high TMR ratio is to have highly oriented(001) MgO barrier/CoFeB crystalline electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 355, '%', 2],[32.0, 450, '%', 1],[39.0, 450, 'degree', 1]

CoFeB
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(9123, 9125)
 The key to have high TMR ratio is to have highly oriented(001) MgO barrier/CoFeB crystalline electrodes.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 355, '%', 2],[26.0, 450, '%', 1],[33.0, 450, 'degree', 1]

Ta
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(9156, 9156)
 The highest TMR ratio obtainedso far is 450% at Ta  450 degree C in a pseudo spin-valve MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 355, '%', 3],[5.0, 450, '%', 0],[2.0, 450, 'degree', 0]

C
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(9160, 9160)
 The highest TMR ratio obtainedso far is 450% at Ta  450 degree C in a pseudo spin-valve MTJ.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 355, '%', 3],[9.0, 450, '%', 0],[2.0, 450, 'degree', 0]

Al2O3
###Giant thermoelectric effect in Al2O3 magnetic tunnel junctions|Weiwei Lin,Michel Hehn,Laurent Chaput,Béatrice Negulescu,Stéphane Andrieu,François Montaigne,Stéphane Mangin###
(9193, 9196)
Giant thermoelectric effect in Al2O3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 1, 'mV', 4]

Al2O3
###Giant thermoelectric effect in Al2O3 magnetic tunnel junctions|Weiwei Lin,Michel Hehn,Laurent Chaput,Béatrice Negulescu,Stéphane Andrieu,François Montaigne,Stéphane Mangin###
(9296, 9299)
 Here we report on giant magnetothermoelectric effect in Al2O3magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1, 'mV', 1]

MgO
###Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Ravi K. Tiwari,Gopinadhan Kalon,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(9488, 9489)
Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Ravi K. Tiwari,Gopinadhan Kalon,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(9540, 9540)
 We study the effect of strain on magnetic tunnel junctions (MTJ) induced by adiamond like carbon (DLC) film.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Ravi K. Tiwari,Gopinadhan Kalon,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(9579, 9579)
 The junction resistance as well as the tunnelmagnetoresistance (TMR) reduces with the DLC film.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Ravi K. Tiwari,Gopinadhan Kalon,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(9693, 9694)
 However, the conductance for the minority channel and for theanti-parallel configuration is significantly more sensitive to strain, whichdrastically increases transmission through a MgO tunnel barrier, therefore, theTMR ratio decreases with biaxial strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(9750, 9752)
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 79.6, ',', 2],[183.0, 0.3, ',', 2],[196.0, 1.05, ',', 3],[235.0, 0.4, ',', 4],[241.0, 2, ',', 4],[249.0, 1.2, ',', 4],[281.0, 330, ',', 4],[287.0, 60, 'min', 4],[325.0, 340, ',', 4],[331.0, 60, 'min', 4],[354.0, 65.5, '%', 5],[369.0, 300, ',', 5],[375.0, 60, 'min', 5],[391.0, 10, '%', 5],[408.0, 330, ',', 5],[420.0, 14, '%', 5],[436.0, 300, ',', 5],[442.0, 90, 'min', 5]

Ta
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(9807, 9807)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 79.6, ',', 1],[128.0, 0.3, ',', 1],[141.0, 1.05, ',', 2],[180.0, 0.4, ',', 3],[186.0, 2, ',', 3],[194.0, 1.2, ',', 3],[226.0, 330, ',', 3],[232.0, 60, 'min', 3],[270.0, 340, ',', 3],[276.0, 60, 'min', 3],[299.0, 65.5, '%', 4],[314.0, 300, ',', 4],[320.0, 60, 'min', 4],[336.0, 10, '%', 4],[353.0, 330, ',', 4],[365.0, 14, '%', 4],[381.0, 300, ',', 4],[387.0, 90, 'min', 4]

Ta/Pd/IrMn/CoFe
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(9868, 9876)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[49.0, 79.6, ',', 1],[59.0, 0.3, ',', 1],[72.0, 1.05, ',', 2],[111.0, 0.4, ',', 3],[117.0, 2, ',', 3],[125.0, 1.2, ',', 3],[157.0, 330, ',', 3],[163.0, 60, 'min', 3],[201.0, 340, ',', 3],[207.0, 60, 'min', 3],[230.0, 65.5, '%', 4],[245.0, 300, ',', 4],[251.0, 60, 'min', 4],[267.0, 10, '%', 4],[284.0, 330, ',', 4],[296.0, 14, '%', 4],[312.0, 300, ',', 4],[318.0, 90, 'min', 4]

Ta
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(9878, 9878)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 79.6, ',', 1],[57.0, 0.3, ',', 1],[70.0, 1.05, ',', 2],[109.0, 0.4, ',', 3],[115.0, 2, ',', 3],[123.0, 1.2, ',', 3],[155.0, 330, ',', 3],[161.0, 60, 'min', 3],[199.0, 340, ',', 3],[205.0, 60, 'min', 3],[228.0, 65.5, '%', 4],[243.0, 300, ',', 4],[249.0, 60, 'min', 4],[265.0, 10, '%', 4],[282.0, 330, ',', 4],[294.0, 14, '%', 4],[310.0, 300, ',', 4],[316.0, 90, 'min', 4]

O
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(9889, 9889)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 79.6, ',', 1],[46.0, 0.3, ',', 1],[59.0, 1.05, ',', 2],[98.0, 0.4, ',', 3],[104.0, 2, ',', 3],[112.0, 1.2, ',', 3],[144.0, 330, ',', 3],[150.0, 60, 'min', 3],[188.0, 340, ',', 3],[194.0, 60, 'min', 3],[217.0, 65.5, '%', 4],[232.0, 300, ',', 4],[238.0, 60, 'min', 4],[254.0, 10, '%', 4],[271.0, 330, ',', 4],[283.0, 14, '%', 4],[299.0, 300, ',', 4],[305.0, 90, 'min', 4]

B
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(9897, 9897)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 79.6, ',', 1],[38.0, 0.3, ',', 1],[51.0, 1.05, ',', 2],[90.0, 0.4, ',', 3],[96.0, 2, ',', 3],[104.0, 1.2, ',', 3],[136.0, 330, ',', 3],[142.0, 60, 'min', 3],[180.0, 340, ',', 3],[186.0, 60, 'min', 3],[209.0, 65.5, '%', 4],[224.0, 300, ',', 4],[230.0, 60, 'min', 4],[246.0, 10, '%', 4],[263.0, 330, ',', 4],[275.0, 14, '%', 4],[291.0, 300, ',', 4],[297.0, 90, 'min', 4]

Ta/Pd
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(9903, 9905)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 79.6, ',', 1],[30.0, 0.3, ',', 1],[43.0, 1.05, ',', 2],[82.0, 0.4, ',', 3],[88.0, 2, ',', 3],[96.0, 1.2, ',', 3],[128.0, 330, ',', 3],[134.0, 60, 'min', 3],[172.0, 340, ',', 3],[178.0, 60, 'min', 3],[201.0, 65.5, '%', 4],[216.0, 300, ',', 4],[222.0, 60, 'min', 4],[238.0, 10, '%', 4],[255.0, 330, ',', 4],[267.0, 14, '%', 4],[283.0, 300, ',', 4],[289.0, 90, 'min', 4]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(10036, 10036)
 For stacks withx<missing VAR>0.4,nm, y<missing VAR>2,nm, and z<missing VAR>1.20,nm, the exchange bias presents asignificant decrease at post annealing temperatureT<missing VAR>textrmann330,circC for 60 min, while the interlayer exchangecoupling and the saturation magnetization per unit area sharply decay atT<missing VAR>textrmann340,circC for 60 min.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 79.6, ',', 2],[101.0, 0.3, ',', 2],[88.0, 1.05, ',', 1],[49.0, 0.4, ',', 0],[43.0, 2, ',', 0],[35.0, 1.2, ',', 0],[3.0, 330, ',', 0],[3.0, 60, 'min', 0],[41.0, 340, ',', 0],[47.0, 60, 'min', 0],[70.0, 65.5, '%', 1],[85.0, 300, ',', 1],[91.0, 60, 'min', 1],[107.0, 10, '%', 1],[124.0, 330, ',', 1],[136.0, 14, '%', 1],[152.0, 300, ',', 1],[158.0, 90, 'min', 1]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(10080, 10080)
 For stacks withx<missing VAR>0.4,nm, y<missing VAR>2,nm, and z<missing VAR>1.20,nm, the exchange bias presents asignificant decrease at post annealing temperatureT<missing VAR>textrmann330,circC for 60 min, while the interlayer exchangecoupling and the saturation magnetization per unit area sharply decay atT<missing VAR>textrmann340,circC for 60 min.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 79.6, ',', 2],[145.0, 0.3, ',', 2],[132.0, 1.05, ',', 1],[93.0, 0.4, ',', 0],[87.0, 2, ',', 0],[79.0, 1.2, ',', 0],[47.0, 330, ',', 0],[41.0, 60, 'min', 0],[3.0, 340, ',', 0],[3.0, 60, 'min', 0],[26.0, 65.5, '%', 1],[41.0, 300, ',', 1],[47.0, 60, 'min', 1],[63.0, 10, '%', 1],[80.0, 330, ',', 1],[92.0, 14, '%', 1],[108.0, 300, ',', 1],[114.0, 90, 'min', 1]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(10124, 10124)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 79.6, ',', 3],[189.0, 0.3, ',', 3],[176.0, 1.05, ',', 2],[137.0, 0.4, ',', 1],[131.0, 2, ',', 1],[123.0, 1.2, ',', 1],[91.0, 330, ',', 1],[85.0, 60, 'min', 1],[47.0, 340, ',', 1],[41.0, 60, 'min', 1],[18.0, 65.5, '%', 0],[3.0, 300, ',', 0],[3.0, 60, 'min', 0],[19.0, 10, '%', 0],[36.0, 330, ',', 0],[48.0, 14, '%', 0],[64.0, 300, ',', 0],[70.0, 90, 'min', 0]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(10163, 10163)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 79.6, ',', 3],[228.0, 0.3, ',', 3],[215.0, 1.05, ',', 2],[176.0, 0.4, ',', 1],[170.0, 2, ',', 1],[162.0, 1.2, ',', 1],[130.0, 330, ',', 1],[124.0, 60, 'min', 1],[86.0, 340, ',', 1],[80.0, 60, 'min', 1],[57.0, 65.5, '%', 0],[42.0, 300, ',', 0],[36.0, 60, 'min', 0],[20.0, 10, '%', 0],[3.0, 330, ',', 0],[9.0, 14, '%', 0],[25.0, 300, ',', 0],[31.0, 90, 'min', 0]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(10191, 10191)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 79.6, ',', 3],[256.0, 0.3, ',', 3],[243.0, 1.05, ',', 2],[204.0, 0.4, ',', 1],[198.0, 2, ',', 1],[190.0, 1.2, ',', 1],[158.0, 330, ',', 1],[152.0, 60, 'min', 1],[114.0, 340, ',', 1],[108.0, 60, 'min', 1],[85.0, 65.5, '%', 0],[70.0, 300, ',', 0],[64.0, 60, 'min', 0],[48.0, 10, '%', 0],[31.0, 330, ',', 0],[19.0, 14, '%', 0],[3.0, 300, ',', 0],[3.0, 90, 'min', 0]

I
###Low Voltage I-V Characteristics in Magnetic Tunnel Junctions|G. G. Cabrera,N. Garcia###
(10251, 10251)
Low Voltage I-V Characteristics in Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Low Voltage I-V Characteristics in Magnetic Tunnel Junctions|G. G. Cabrera,N. Garcia###
(10253, 10253)
Low Voltage I-V Characteristics in Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10486, 10495)
Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[149.0, 361, '%', 2],[156.0, 425, 'C', 2],[198.0, 325, 'C', 2]

CoFeB
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10543, 10545)
 We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 361, '%', 1],[106.0, 425, 'C', 1],[148.0, 325, 'C', 1]

MgO
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10570, 10571)
 We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 361, '%', 1],[80.0, 425, 'C', 1],[122.0, 325, 'C', 1]

CoFe/Ru/CoFeB
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10579, 10586)
 We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 361, '%', 1],[65.0, 425, 'C', 1],[107.0, 325, 'C', 1]

Ru
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10601, 10601)
 We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 361, '%', 1],[50.0, 425, 'C', 1],[92.0, 325, 'C', 1]

Ru
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10609, 10609)
 We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 361, '%', 1],[42.0, 425, 'C', 1],[84.0, 325, 'C', 1]

(Ta)
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10632, 10634)
 The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 361, '%', 0],[17.0, 425, 'C', 0],[59.0, 325, 'C', 0]

Ru
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10639, 10639)
 The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 361, '%', 0],[12.0, 425, 'C', 0],[54.0, 325, 'C', 0]

Ta
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10649, 10649)
 The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 361, '%', 0],[2.0, 425, 'C', 0],[44.0, 325, 'C', 0]

Ru
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10681, 10681)
 The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 361, '%', 0],[30.0, 425, 'C', 0],[12.0, 325, 'C', 0]

Ta
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10690, 10690)
 The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 361, '%', 0],[39.0, 425, 'C', 0],[3.0, 325, 'C', 0]

CoFeB
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(10723, 10725)
 Ruthenium spacers play an important role in formingan (001)-oriented bcc CoFeB pinned layer, resulting in a high TMR ratio throughannealing at high temperatures.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 361, '%', 1],[72.0, 425, 'C', 1],[30.0, 325, 'C', 1]

CoFeB/MgO/CoFeB
###Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono###
(10776, 10785)
Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 200, '%', 1],[64.0, 3, 'K', 1]

CoFeB/MgO/CoFeB
###Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono###
(10810, 10819)
 We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[26.0, 200, '%', 0],[30.0, 3, 'K', 0]

S
###Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions|Dhritiman Bhattacharya,Peng Sheng,Md Ahsanul Abeed,Zhengyang Zhao,Hongshi Li,Jian-Ping Wang,Supriyo Bandyopadhyay,Bin Ma,Jayasimha Atulasimha###
(11017, 11017)
 We show that a surface acoustic wave (SAW) applied across the terminals of amagnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel andantiparallel resistances of the MTJ, with the latter decreasing much more thanthe former.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions|Dhritiman Bhattacharya,Peng Sheng,Md Ahsanul Abeed,Zhengyang Zhao,Hongshi Li,Jian-Ping Wang,Supriyo Bandyopadhyay,Bin Ma,Jayasimha Atulasimha###
(11019, 11019)
 We show that a surface acoustic wave (SAW) applied across the terminals of amagnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel andantiparallel resistances of the MTJ, with the latter decreasing much more thanthe former.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions|Dhritiman Bhattacharya,Peng Sheng,Md Ahsanul Abeed,Zhengyang Zhao,Hongshi Li,Jian-Ping Wang,Supriyo Bandyopadhyay,Bin Ma,Jayasimha Atulasimha###
(11169, 11169)
 The coercivities of the free and fixed layer of the MTJ, however, arenot affected significantly, suggesting that the SAW does not cause large-anglemagnetization rotation in the magnetic layers through the inversemagnetostriction (Villari) effect at the power levels used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions|Dhritiman Bhattacharya,Peng Sheng,Md Ahsanul Abeed,Zhengyang Zhao,Hongshi Li,Jian-Ping Wang,Supriyo Bandyopadhyay,Bin Ma,Jayasimha Atulasimha###
(11171, 11171)
 The coercivities of the free and fixed layer of the MTJ, however, arenot affected significantly, suggesting that the SAW does not cause large-anglemagnetization rotation in the magnetic layers through the inversemagnetostriction (Villari) effect at the power levels used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs/Au
###Spin-orbit induced anisotropy in the tunneling magnetoresistance of magnetic tunnel junctions|A. Matos-Abiague,J. Fabian###
(11475, 11480)
 The theoretical calculations are in good agreement with the TAMRexperimentally observed in epitaxial Fe/GaAs/Au tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgAl2O4
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(11511, 11515)
Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2.25, 'mJ', 3],[122.0, 400, 'C', 3],[134.0, 60, '%', 4],[191.0, 1, 'V', 5]

MgAl2O4
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(11530, 11534)
 Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2.25, 'mJ', 2],[103.0, 400, 'C', 2],[115.0, 60, '%', 3],[172.0, 1, 'V', 4]

F
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(11555, 11555)
It is found that reactive R<missing VAR>F sputtering with O2 is essential to obtain strongperpendicular magnetic anisotropy and large tunneling magnetoresistance inMgAl2O4-based junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2.25, 'mJ', 1],[82.0, 400, 'C', 1],[94.0, 60, '%', 2],[151.0, 1, 'V', 3]

O2
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(11561, 11562)
It is found that reactive R<missing VAR>F sputtering with O2 is essential to obtain strongperpendicular magnetic anisotropy and large tunneling magnetoresistance inMgAl2O4-based junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2.25, 'mJ', 1],[75.0, 400, 'C', 1],[87.0, 60, '%', 2],[144.0, 1, 'V', 3]

MgAl2O4
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(11592, 11596)
It is found that reactive R<missing VAR>F sputtering with O2 is essential to obtain strongperpendicular magnetic anisotropy and large tunneling magnetoresistance inMgAl2O4-based junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2.25, 'mJ', 1],[41.0, 400, 'C', 1],[53.0, 60, '%', 2],[110.0, 1, 'V', 3]

MgO
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(11724, 11725)
 The Vhalf, biasvoltage at which tunneling magnetoresistance drops to half of the zero-biasvalue, is found to be about 1V, which is substantially higher than that ofMgO-based junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2.25, 'mJ', 2],[87.0, 400, 'C', 2],[75.0, 60, '%', 1],[18.0, 1, 'V', 0]

CoFeB/MgO/CoFeB
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12239, 12248)
Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[31.0, 472, '%', 1],[43.0, 804, '%', 1],[47.0, 5, 'K', 1],[89.0, 450, 'oC', 1],[169.0, 450, 'oC', 2]

(SV)
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12305, 12308)
 We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 472, '%', 0],[14.0, 804, '%', 0],[10.0, 5, 'K', 0],[29.0, 450, 'oC', 0],[109.0, 450, 'oC', 1]

CoFeB/MgO/CoFeB
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12310, 12319)
 We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[31.0, 472, '%', 0],[19.0, 804, '%', 0],[15.0, 5, 'K', 0],[18.0, 450, 'oC', 0],[98.0, 450, 'oC', 1]

B
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12378, 12378)
 By contrast, the TMR ratios for exchange-biased(E<missing VAR>B) SV MTJs with a MnIr antiferromagnetic layer are found to drop when theyare annealed at 450oC.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 472, '%', 1],[87.0, 804, '%', 1],[83.0, 5, 'K', 1],[41.0, 450, 'oC', 1],[39.0, 450, 'oC', 0]

SV
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12381, 12382)
 By contrast, the TMR ratios for exchange-biased(E<missing VAR>B) SV MTJs with a MnIr antiferromagnetic layer are found to drop when theyare annealed at 450oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 472, '%', 1],[90.0, 804, '%', 1],[86.0, 5, 'K', 1],[44.0, 450, 'oC', 1],[35.0, 450, 'oC', 0]

MnIr
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12392, 12393)
 By contrast, the TMR ratios for exchange-biased(E<missing VAR>B) SV MTJs with a MnIr antiferromagnetic layer are found to drop when theyare annealed at 450oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 472, '%', 1],[101.0, 804, '%', 1],[97.0, 5, 'K', 1],[55.0, 450, 'oC', 1],[24.0, 450, 'oC', 0]

C
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12441, 12441)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 472, '%', 2],[150.0, 804, '%', 2],[146.0, 5, 'K', 2],[104.0, 450, 'oC', 2],[24.0, 450, 'oC', 1]

Mn
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12449, 12449)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 472, '%', 2],[158.0, 804, '%', 2],[154.0, 5, 'K', 2],[112.0, 450, 'oC', 2],[32.0, 450, 'oC', 1]

Ru
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12453, 12453)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 472, '%', 2],[162.0, 804, '%', 2],[158.0, 5, 'K', 2],[116.0, 450, 'oC', 2],[36.0, 450, 'oC', 1]

MgO
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12461, 12462)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 472, '%', 2],[170.0, 804, '%', 2],[166.0, 5, 'K', 2],[124.0, 450, 'oC', 2],[44.0, 450, 'oC', 1]

B
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12476, 12476)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 472, '%', 2],[185.0, 804, '%', 2],[181.0, 5, 'K', 2],[139.0, 450, 'oC', 2],[59.0, 450, 'oC', 1]

SV
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(12478, 12479)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 472, '%', 2],[187.0, 804, '%', 2],[183.0, 5, 'K', 2],[141.0, 450, 'oC', 2],[61.0, 450, 'oC', 1]

F
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(12567, 12567)
 Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned referencelayer and a composite free layer (FL) are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.5, 'nm', 2],[111.0, 20, 'K', 2],[182.0, 130, 'nm', 4]

F
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(12585, 12585)
 Different thicknessesof the FL<missing VAR> were tested to obtain an optimal balance between tunnelingmagnetoresistance (TMR) ratio and perpendicular magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1.5, 'nm', 1],[93.0, 20, 'K', 1],[164.0, 130, 'nm', 3]

C
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(12636, 12636)
 Afterannealing at 400 circC, the TMR ratio for 1.5 nm thick CoFeB sublayerreached 180 % at room temperature and 280 % at 20 K with an MgO tunnel barrierthickness corresponding to the resistance area product R<missing VAR>A  10Ohmmathrmmum<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1.5, 'nm', 0],[42.0, 20, 'K', 0],[113.0, 130, 'nm', 2]

CoFeB
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(12652, 12654)
 Afterannealing at 400 circC, the TMR ratio for 1.5 nm thick CoFeB sublayerreached 180 % at room temperature and 280 % at 20 K with an MgO tunnel barrierthickness corresponding to the resistance area product R<missing VAR>A  10Ohmmathrmmum<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1.5, 'nm', 0],[24.0, 20, 'K', 0],[95.0, 130, 'nm', 2]

MgO
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(12684, 12685)
 Afterannealing at 400 circC, the TMR ratio for 1.5 nm thick CoFeB sublayerreached 180 % at room temperature and 280 % at 20 K with an MgO tunnel barrierthickness corresponding to the resistance area product R<missing VAR>A  10Ohmmathrmmum<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1.5, 'nm', 0],[6.0, 20, 'K', 0],[64.0, 130, 'nm', 2]

S
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(12769, 12769)
 magnetic field stability diagramsmeasured in pillar-shaped MTJs with 130 nm diameter indicate the competitionbetween spin transfer torque (STT), voltage controlled magnetic anisotropy(VCM<missing VAR>A) and temperature effects in the switching process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 1.5, 'nm', 2],[91.0, 20, 'K', 2],[20.0, 130, 'nm', 0]

VC
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(12785, 12786)
 magnetic field stability diagramsmeasured in pillar-shaped MTJs with 130 nm diameter indicate the competitionbetween spin transfer torque (STT), voltage controlled magnetic anisotropy(VCM<missing VAR>A) and temperature effects in the switching process.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1.5, 'nm', 2],[107.0, 20, 'K', 2],[36.0, 130, 'nm', 0]

S
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(12867, 12867)
 An extended stabilityphase diagram model that takes into account all three parameters and theeffective damping measured independently using broadband ferromagneticresonance technique enabled the determination of both STT and VCM<missing VAR>A coefficientsthat are responsible for the FL<missing VAR> magnetization switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 1.5, 'nm', 3],[189.0, 20, 'K', 3],[118.0, 130, 'nm', 1]

VC
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(12873, 12874)
 An extended stabilityphase diagram model that takes into account all three parameters and theeffective damping measured independently using broadband ferromagneticresonance technique enabled the determination of both STT and VCM<missing VAR>A coefficientsthat are responsible for the FL<missing VAR> magnetization switching.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 1.5, 'nm', 3],[195.0, 20, 'K', 3],[124.0, 130, 'nm', 1]

F
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(12891, 12891)
 An extended stabilityphase diagram model that takes into account all three parameters and theeffective damping measured independently using broadband ferromagneticresonance technique enabled the determination of both STT and VCM<missing VAR>A coefficientsthat are responsible for the FL<missing VAR> magnetization switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 1.5, 'nm', 3],[213.0, 20, 'K', 3],[142.0, 130, 'nm', 1]

GaMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(13278, 13280)
GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 110, 'meV', 2],[136.0, 175, '%', 3],[141.0, 2.6, 'K', 3]

AlMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(13294, 13296)
GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 110, 'meV', 2],[120.0, 175, '%', 3],[125.0, 2.6, 'K', 3]

GaMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(13315, 13317)
 We investigate the spin-dependent transport of GaMnAs-based magnetic tunneljunctions (MTJs) containing a paramagnetic AlMnAs barrier with variousthicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 110, 'meV', 1],[99.0, 175, '%', 2],[104.0, 2.6, 'K', 2]

AlMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(13340, 13342)
 We investigate the spin-dependent transport of GaMnAs-based magnetic tunneljunctions (MTJs) containing a paramagnetic AlMnAs barrier with variousthicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 110, 'meV', 1],[74.0, 175, '%', 2],[79.0, 2.6, 'K', 2]

AlMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(13362, 13364)
 The barrier height of AlMnAs with respect to the Fermi level ofGaMnAs is estimated to be 110 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 110, 'meV', 0],[52.0, 175, '%', 1],[57.0, 2.6, 'K', 1]

GaMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(13381, 13383)
 The barrier height of AlMnAs with respect to the Fermi level ofGaMnAs is estimated to be 110 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 110, 'meV', 0],[33.0, 175, '%', 1],[38.0, 2.6, 'K', 1]

GaMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(13439, 13441)
 We observe tunneling magnetoresistance (TMR)ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-basedMTJs with other barrier materials in the same temperature region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 110, 'meV', 1],[23.0, 175, '%', 0],[18.0, 2.6, 'K', 0]

AlMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(13503, 13505)
 These highTMR ratios can be mainly attributed to the relatively high crystal quality ofAlMnAs and the suppression of the tunneling probability near at the in-planewave-vector k<missing VAR>0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 110, 'meV', 2],[87.0, 175, '%', 1],[82.0, 2.6, 'K', 1]

MgO
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(13855, 13856)
 Different nonmagnetic materials (MgO, Ta, Mo) have been employed asthe coupling layers in these multi-interface free layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 10, 'nm', 2],[133.0, 200, '%', 3]

Ta
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(13859, 13859)
 Different nonmagnetic materials (MgO, Ta, Mo) have been employed asthe coupling layers in these multi-interface free layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 10, 'nm', 2],[130.0, 200, '%', 3]

Mo
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(13862, 13862)
 Different nonmagnetic materials (MgO, Ta, Mo) have been employed asthe coupling layers in these multi-interface free layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 10, 'nm', 2],[127.0, 200, '%', 3]

CoFeB
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(13943, 13945)
 Astrong dependence of tunneling magnetoresistance on the thickness of the firstCoFeB layer has been observed.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 10, 'nm', 4],[44.0, 200, '%', 1]

In
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(13956, 13956)
 In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 10, 'nm', 5],[33.0, 200, '%', 0]

Mo
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(13962, 13962)
 In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 10, 'nm', 5],[27.0, 200, '%', 0]

MgO
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(13966, 13967)
 In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 10, 'nm', 5],[22.0, 200, '%', 0]

C
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(14003, 14003)
 In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 10, 'nm', 5],[14.0, 200, '%', 0]

MgGa2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(14205, 14209)
MgGa2O4 spinel barrier for magnetic tunnel junctions coherent tunneling and low barrier height.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 121, '%', 2],[103.0, 196, '%', 2],[107.0, 4, 'K', 2]

Fe
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(14238, 14238)
 Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunneljunctions (MTJs) were fabricated by magnetron sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 121, '%', 1],[74.0, 196, '%', 1],[78.0, 4, 'K', 1]

(MgGa2O4)
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(14248, 14254)
 Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunneljunctions (MTJs) were fabricated by magnetron sputtering.
Featurization successful!
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 121, '%', 1],[58.0, 196, '%', 1],[62.0, 4, 'K', 1]

MgGa2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(14350, 14354)
 Tunnelmagnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) wasobserved, suggesting a TMR enhancement by the coherent tunneling effect in theMgGa2O4 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 121, '%', 0],[38.0, 196, '%', 0],[34.0, 4, 'K', 0]

MgGa2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(14361, 14365)
 The MgGa2O4 layer had a spinel structure and it showed goodlattice matching with the Fe layers owing to slight tetragonal latticedistortion of MgGa2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 121, '%', 1],[49.0, 196, '%', 1],[45.0, 4, 'K', 1]

Fe
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(14394, 14394)
 The MgGa2O4 layer had a spinel structure and it showed goodlattice matching with the Fe layers owing to slight tetragonal latticedistortion of MgGa2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 121, '%', 1],[82.0, 196, '%', 1],[78.0, 4, 'K', 1]

MgGa2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(14413, 14417)
 The MgGa2O4 layer had a spinel structure and it showed goodlattice matching with the Fe layers owing to slight tetragonal latticedistortion of MgGa2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 121, '%', 1],[101.0, 196, '%', 1],[97.0, 4, 'K', 1]

MgGa2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(14458, 14462)
 Barrier thickness dependence of the tunneling resistanceand current-voltage characteristics revealed that the barrier height of theMgGa2O4 barrier is much lower than that in an MgAl2O4 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 121, '%', 2],[146.0, 196, '%', 2],[142.0, 4, 'K', 2]

MgAl2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(14480, 14484)
 Barrier thickness dependence of the tunneling resistanceand current-voltage characteristics revealed that the barrier height of theMgGa2O4 barrier is much lower than that in an MgAl2O4 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 121, '%', 2],[168.0, 196, '%', 2],[164.0, 4, 'K', 2]

Ga
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(14502, 14502)
 This studydemonstrates the potential of Ga-based spinel oxides for MTJ barriers having alarge TMR ratio at a low resistance area product.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 121, '%', 3],[190.0, 196, '%', 3],[186.0, 4, 'K', 3]

CoFeB/MgO/CoFeB
###Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(14562, 14571)
Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[87.0, 270, 'C', 2],[90.0, 300, 'C', 2],[105.0, 7.8, 'x', 2],[116.0, 8.8, 'x', 2],[145.0, 49, '%', 2],[170.0, 350, 'C', 3],[197.0, 2.5, 'x', 3]

Co40Fe40B20/MgO/Co40Fe40B20
###Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(14595, 14610)
 Current-driven magnetization switching in low-resistanceCo40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[48.0, 270, 'C', 1],[51.0, 300, 'C', 1],[66.0, 7.8, 'x', 1],[77.0, 8.8, 'x', 1],[106.0, 49, '%', 1],[131.0, 350, 'C', 2],[158.0, 2.5, 'x', 2]

V
###Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(14812, 14812)
 Weattribute the low Jc to the high spin-polarization of tunnel current and smallMsV product of the CoFeB single free layer, where Ms is the saturationmagnetization and V the volume of the free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 270, 'C', 2],[151.0, 300, 'C', 2],[136.0, 7.8, 'x', 2],[125.0, 8.8, 'x', 2],[96.0, 49, '%', 2],[71.0, 350, 'C', 1],[44.0, 2.5, 'x', 1]

CoFeB
###Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(14820, 14822)
 Weattribute the low Jc to the high spin-polarization of tunnel current and smallMsV product of the CoFeB single free layer, where Ms is the saturationmagnetization and V the volume of the free layer.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 270, 'C', 2],[159.0, 300, 'C', 2],[144.0, 7.8, 'x', 2],[133.0, 8.8, 'x', 2],[104.0, 49, '%', 2],[79.0, 350, 'C', 1],[52.0, 2.5, 'x', 1]

V
###Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(14846, 14846)
 Weattribute the low Jc to the high spin-polarization of tunnel current and smallMsV product of the CoFeB single free layer, where Ms is the saturationmagnetization and V the volume of the free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 270, 'C', 2],[185.0, 300, 'C', 2],[170.0, 7.8, 'x', 2],[159.0, 8.8, 'x', 2],[130.0, 49, '%', 2],[105.0, 350, 'C', 1],[78.0, 2.5, 'x', 1]

S
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(15272, 15272)
 We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 20, 'kA', 1],[76.0, 64, '%', 1],[80.0, 4, 'monolayer', 1],[174.0, 2, ',', 3],[182.0, 9, 'kA', 3],[185.0, 2, ',', 3]

Co
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(15284, 15284)
 We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 20, 'kA', 1],[64.0, 64, '%', 1],[68.0, 4, 'monolayer', 1],[162.0, 2, ',', 3],[170.0, 9, 'kA', 3],[173.0, 2, ',', 3]

Fe
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(15286, 15286)
 We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 20, 'kA', 1],[62.0, 64, '%', 1],[66.0, 4, 'monolayer', 1],[160.0, 2, ',', 3],[168.0, 9, 'kA', 3],[171.0, 2, ',', 3]

B/MgO
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(15288, 15291)
 We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[51.0, 20, 'kA', 1],[57.0, 64, '%', 1],[61.0, 4, 'monolayer', 1],[155.0, 2, ',', 3],[163.0, 9, 'kA', 3],[166.0, 2, ',', 3]

P
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(15317, 15317)
 We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 20, 'kA', 1],[31.0, 64, '%', 1],[35.0, 4, 'monolayer', 1],[129.0, 2, ',', 3],[137.0, 9, 'kA', 3],[140.0, 2, ',', 3]

In
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(15367, 15367)
 In this paper, the reduction of the critical switching currentdensity is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 20, 'kA', 3],[19.0, 64, '%', 1],[15.0, 4, 'monolayer', 1],[79.0, 2, ',', 1],[87.0, 9, 'kA', 1],[90.0, 2, ',', 1]

C
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(15411, 15411)
 By optimizing the applied bias field during D<missing VAR>C-STTmeasurements, ultra low critical switching current densities of less than 20k<missing VAR>A/cm2, even down to 9 kA/cm2, are found.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 20, 'kA', 4],[63.0, 64, '%', 2],[59.0, 4, 'monolayer', 2],[35.0, 2, ',', 0],[43.0, 9, 'kA', 0],[46.0, 2, ',', 0]

S
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(15413, 15413)
 By optimizing the applied bias field during D<missing VAR>C-STTmeasurements, ultra low critical switching current densities of less than 20k<missing VAR>A/cm2, even down to 9 kA/cm2, are found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 20, 'kA', 4],[65.0, 64, '%', 2],[61.0, 4, 'monolayer', 2],[33.0, 2, ',', 0],[41.0, 9, 'kA', 0],[44.0, 2, ',', 0]

Tb/Co
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(15547, 15549)
Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[111.0, 50, 'fs', 2],[202.0, 74, '%', 3]

In
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(15644, 15644)
 In this work we demonstrate successfulfield-free 50fs single laser pulse driven magnetization reversal of [Tb/Co]based storage layer in a perpendicular magnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 50, 'fs', 0],[107.0, 74, '%', 1]

Co
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(15679, 15679)
 In this work we demonstrate successfulfield-free 50fs single laser pulse driven magnetization reversal of [Tb/Co]based storage layer in a perpendicular magnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 50, 'fs', 0],[72.0, 74, '%', 1]

Co2FeAl
###Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl|Ali Habiboglu,Yash Chandak,Pravin Khanal,Bowei Zhou,Carter Eckel,Jacob Cutshall Kennedy Warrilow,John O'Brien,John R. Schaibley,Brian J. Leroy,Wei-Gang Wang###
(16233, 16236)
Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl|Ali Habiboglu,Yash Chandak,Pravin Khanal,Bowei Zhou,Carter Eckel,Jacob Cutshall Kennedy Warrilow,John O'Brien,John R. Schaibley,Brian J. Leroy,Wei-Gang Wang###
(16281, 16284)
 Here junctions withCo2FeAl as a ferromagnetic electrode are fabricated by room temperaturesputtering on Si/SiO2 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiO2
###Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl|Ali Habiboglu,Yash Chandak,Pravin Khanal,Bowei Zhou,Carter Eckel,Jacob Cutshall Kennedy Warrilow,John O'Brien,John R. Schaibley,Brian J. Leroy,Wei-Gang Wang###
(16309, 16313)
 Here junctions withCo2FeAl as a ferromagnetic electrode are fabricated by room temperaturesputtering on Si/SiO2 substrates.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co2FeAl
###Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl|Ali Habiboglu,Yash Chandak,Pravin Khanal,Bowei Zhou,Carter Eckel,Jacob Cutshall Kennedy Warrilow,John O'Brien,John R. Schaibley,Brian J. Leroy,Wei-Gang Wang###
(16328, 16331)
 The doping of Boron in Co2FeAl is found tohave a large positive impact on the structural, magnetic and transportproperties of the junctions, with a reduced interfacial roughness andsubstantial improved tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co60Fe20B20/MgO/Co60Fe20B20
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(16640, 16655)
 Here we present direct measurements of boththe magnitude and direction of the spin torque in Co60Fe20B20/MgO/Co60Fe20B20MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[203.0, 30, '%', 3]

At
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(16663, 16663)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(16669, 16669)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(16684, 16684)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(16759, 16759)
 Withincreasing bias, the in-plane component d<missing VAR>tauparallel/d<missing VAR>V remains large, instriking contrast to the decreasing magnetoresistance ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 30, '%', 1]

(V)
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(16823, 16825)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 30, '%', 0]

V2
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(16837, 16838)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 30, '%', 0]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(16845, 16845)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 30, '%', 0]

CoFeB/MgO/CoFeB
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(16894, 16903)
Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[188.0, 375, 'C', 3],[270.0, 260, '%', 4],[281.0, 403, '%', 4],[285.0, 5, 'K', 4]

MgO
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(16913, 16914)
Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 375, 'C', 3],[259.0, 260, '%', 4],[270.0, 403, '%', 4],[274.0, 5, 'K', 4]

MgO
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(16960, 16961)
 We investigated the dependence of giant tunnel magnetoresistance (TMR) on thethickness of an MgO barrier and on the annealing temperature of sputteredCoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 375, 'C', 2],[212.0, 260, '%', 3],[223.0, 403, '%', 3],[227.0, 5, 'K', 3]

CoFeB/MgO/CoFeB
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(16980, 16989)
 We investigated the dependence of giant tunnel magnetoresistance (TMR) on thethickness of an MgO barrier and on the annealing temperature of sputteredCoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[102.0, 375, 'C', 2],[184.0, 260, '%', 3],[195.0, 403, '%', 3],[199.0, 5, 'K', 3]

SiO2/Si
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(17001, 17005)
 We investigated the dependence of giant tunnel magnetoresistance (TMR) on thethickness of an MgO barrier and on the annealing temperature of sputteredCoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[86.0, 375, 'C', 2],[168.0, 260, '%', 3],[179.0, 403, '%', 3],[183.0, 5, 'K', 3]

MgO
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(17025, 17026)
 Theresistance-area product exponentially increases with MgO thickness, indicatingthat the quality of MgO barriers is high in the investigated thickness range of1.15-2.4 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 375, 'C', 1],[147.0, 260, '%', 2],[158.0, 403, '%', 2],[162.0, 5, 'K', 2]

MgO
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(17042, 17043)
 Theresistance-area product exponentially increases with MgO thickness, indicatingthat the quality of MgO barriers is high in the investigated thickness range of1.15-2.4 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 375, 'C', 1],[130.0, 260, '%', 2],[141.0, 403, '%', 2],[145.0, 5, 'K', 2]

CoFeB/MgO/CoFeB
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(17105, 17114)
 High-resolution transmission electron microscope images show thatannealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeBstructures, even though CoFeB electrodes are amorphous in the as-sputteredstate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 375, 'C', 0],[59.0, 260, '%', 1],[70.0, 403, '%', 1],[74.0, 5, 'K', 1]

CoFeB
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(17124, 17126)
 High-resolution transmission electron microscope images show thatannealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeBstructures, even though CoFeB electrodes are amorphous in the as-sputteredstate.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 375, 'C', 0],[47.0, 260, '%', 1],[58.0, 403, '%', 1],[62.0, 5, 'K', 1]

MgO
###Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers|Patryk Krzysteczko,Xinli Kou,Karsten Rott,Andy Thomas,Günter Reiss###
(17221, 17222)
Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4.4, 'ohm', 2]

MgO
###Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers|Patryk Krzysteczko,Xinli Kou,Karsten Rott,Andy Thomas,Günter Reiss###
(17245, 17246)
 Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriersare prepared to examine their stability under large current stress.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 4.4, 'ohm', 1]

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(17532, 17537)
 We report an extensive first-principles investigation of impurity-induceddevice-to-device variability of spin-polarized quantum tunneling throughFe/MgO/Fe magnetic tunnel junctions (MTJ).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(17552, 17552)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(17604, 17604)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(17617, 17622)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(17639, 17639)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(17643, 17644)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(17661, 17666)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(17700, 17700)
 Our first-principles calculations of the fluctuations ofthe on/off currents and STT provide vital information for future predictions ofthe long-term reliability of spintronic devices, which is imperative forhigh-volume production.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Planar Hall Effect MRAM|Y. Bason,L. Klein,J. -B. Yau,X. Hong,J. Hoffman,C. H. Ahn###
(17821, 17822)
 We suggest a new type of magnetic random access memory (MRAM) that is basedon the phenomenon of the planar Hall effect (PHE) in magnetic films, and wedemonstrate this idea with manganite films.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Planar Hall Effect MRAM|Y. Bason,L. Klein,J. -B. Yau,X. Hong,J. Hoffman,C. H. Ahn###
(17853, 17854)
 The PHE-MRAM<missing VAR> is structurallysimpler than currently developed MRAM<missing VAR> that is based on magnetoresistance tunneljunctions (MTJ), with the tunnel junction structure being replaced by a singlelayer film.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(17940, 17940)
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl2O4/Fe(001) magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.1, 'nm', 3],[204.0, 200, '%', 3],[248.0, 0.2, 'nm', 4]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(17942, 17942)
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl2O4/Fe(001) magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 0.1, 'nm', 3],[202.0, 200, '%', 3],[246.0, 0.2, 'nm', 4]

Fe
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(17956, 17956)
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl2O4/Fe(001) magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.1, 'nm', 3],[188.0, 200, '%', 3],[232.0, 0.2, 'nm', 4]

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(17992, 17992)
 We investigated the effect of a Mg-Al layer insertion at the bottom interfaceof epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions (MTJs) ontheir spin-dependent transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 0.1, 'nm', 2],[152.0, 200, '%', 2],[196.0, 0.2, 'nm', 3]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(17994, 17994)
 We investigated the effect of a Mg-Al layer insertion at the bottom interfaceof epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions (MTJs) ontheir spin-dependent transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 0.1, 'nm', 2],[150.0, 200, '%', 2],[194.0, 0.2, 'nm', 3]

Fe/MgAl2O4
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18013, 18019)
 We investigated the effect of a Mg-Al layer insertion at the bottom interfaceof epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions (MTJs) ontheir spin-dependent transport properties.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[101.0, 0.1, 'nm', 2],[125.0, 200, '%', 2],[169.0, 0.2, 'nm', 3]

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18098, 18098)
 The tunnel magnetoresistance (TMR)ratio and differential conductance spectra for the parallel magneticconfiguration exhibited clear dependence on the inserted Mg-Al thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.1, 'nm', 1],[46.0, 200, '%', 1],[90.0, 0.2, 'nm', 2]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18100, 18100)
 The tunnel magnetoresistance (TMR)ratio and differential conductance spectra for the parallel magneticconfiguration exhibited clear dependence on the inserted Mg-Al thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.1, 'nm', 1],[44.0, 200, '%', 1],[88.0, 0.2, 'nm', 2]

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18110, 18110)
 Aslight Mg-Al insertion (thickness < 0.1 nm) was effective for obtaining a largeTMR ratio above 200% at room temperature and observing a distinct local minimumstructure in conductance spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.1, 'nm', 0],[34.0, 200, '%', 0],[78.0, 0.2, 'nm', 1]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18112, 18112)
 Aslight Mg-Al insertion (thickness < 0.1 nm) was effective for obtaining a largeTMR ratio above 200% at room temperature and observing a distinct local minimumstructure in conductance spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.1, 'nm', 0],[32.0, 200, '%', 0],[76.0, 0.2, 'nm', 1]

In
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18175, 18175)
 In contrast, thicker Mg-Al (> 0.2 nm) induceda reduction of TMR ratios and featureless conductance spectra, indicating adegradation of the bottom-Fe/MgAl2O4 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0.1, 'nm', 1],[31.0, 200, '%', 1],[13.0, 0.2, 'nm', 0]

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18182, 18182)
 In contrast, thicker Mg-Al (> 0.2 nm) induceda reduction of TMR ratios and featureless conductance spectra, indicating adegradation of the bottom-Fe/MgAl2O4 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.1, 'nm', 1],[38.0, 200, '%', 1],[6.0, 0.2, 'nm', 0]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18184, 18184)
 In contrast, thicker Mg-Al (> 0.2 nm) induceda reduction of TMR ratios and featureless conductance spectra, indicating adegradation of the bottom-Fe/MgAl2O4 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.1, 'nm', 1],[40.0, 200, '%', 1],[4.0, 0.2, 'nm', 0]

Fe/MgAl2O4
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18228, 18234)
 In contrast, thicker Mg-Al (> 0.2 nm) induceda reduction of TMR ratios and featureless conductance spectra, indicating adegradation of the bottom-Fe/MgAl2O4 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[108.0, 0.1, 'nm', 1],[84.0, 200, '%', 1],[40.0, 0.2, 'nm', 0]

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18247, 18247)
 Therefore, a minimalMg-Al insertion was found to be effective to maximize the TMR ratio for asputtered MgAl2O4-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.1, 'nm', 2],[103.0, 200, '%', 2],[59.0, 0.2, 'nm', 1]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18249, 18249)
 Therefore, a minimalMg-Al insertion was found to be effective to maximize the TMR ratio for asputtered MgAl2O4-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0.1, 'nm', 2],[105.0, 200, '%', 2],[61.0, 0.2, 'nm', 1]

MgAl2O4
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(18282, 18286)
 Therefore, a minimalMg-Al insertion was found to be effective to maximize the TMR ratio for asputtered MgAl2O4-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 0.1, 'nm', 2],[138.0, 200, '%', 2],[94.0, 0.2, 'nm', 1]

La0.7Sr0.3MnO3/SrTiO3
###Stoner-Wohlfart model applied to bicrystal magnetoresistance hysteresis|R. Gunnarsson,M. Hanson,C. Dubourdieu###
(18658, 18669)
 Moreover, we show that it is necessary to include biaxialmagnetocrystalline anisotropy to fully describe the grain boundarymagnetoresistance in La0.7Sr0.3MnO3/SrTiO3 bicrystal tunneljunctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18690, 18690)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 25, '%', 6],[337.0, 60, '%', 6],[364.0, 350, 'C', 6]

Pd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18692, 18692)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 25, '%', 6],[335.0, 60, '%', 6],[362.0, 350, 'C', 6]

Ru
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18704, 18704)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 25, '%', 6],[323.0, 60, '%', 6],[350.0, 350, 'C', 6]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18741, 18741)
 Magnetic materials that possess large bulk perpendicular magnetic anisotropy(PM<missing VAR>A) are essential for the development of magnetic tunnel junctions (MTJs)used in future spintronic memory and logic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 25, '%', 5],[286.0, 60, '%', 5],[313.0, 350, 'C', 5]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18854, 18854)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 25, '%', 3],[173.0, 60, '%', 3],[200.0, 350, 'C', 3]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18856, 18856)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 25, '%', 3],[171.0, 60, '%', 3],[198.0, 350, 'C', 3]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18858, 18858)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 25, '%', 3],[169.0, 60, '%', 3],[196.0, 350, 'C', 3]

FePd/Ru/FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18877, 18883)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[140.0, 25, '%', 3],[144.0, 60, '%', 3],[171.0, 350, 'C', 3]

Ru
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18903, 18903)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 25, '%', 3],[124.0, 60, '%', 3],[151.0, 350, 'C', 3]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18914, 18915)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 25, '%', 2],[112.0, 60, '%', 2],[139.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18917, 18917)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 25, '%', 2],[110.0, 60, '%', 2],[137.0, 350, 'C', 2]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18919, 18919)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 25, '%', 2],[108.0, 60, '%', 2],[135.0, 350, 'C', 2]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18921, 18921)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 25, '%', 2],[106.0, 60, '%', 2],[133.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18934, 18934)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 25, '%', 2],[93.0, 60, '%', 2],[120.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18977, 18977)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 25, '%', 1],[50.0, 60, '%', 1],[77.0, 350, 'C', 1]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18991, 18992)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 25, '%', 1],[35.0, 60, '%', 1],[62.0, 350, 'C', 1]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18994, 18994)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 25, '%', 1],[33.0, 60, '%', 1],[60.0, 350, 'C', 1]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18996, 18996)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 25, '%', 1],[31.0, 60, '%', 1],[58.0, 350, 'C', 1]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(18998, 18998)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 25, '%', 1],[29.0, 60, '%', 1],[56.0, 350, 'C', 1]

K
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(19044, 19044)
 Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 25, '%', 0],[17.0, 60, '%', 0],[10.0, 350, 'C', 0]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(19077, 19077)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 25, '%', 1],[50.0, 60, '%', 1],[23.0, 350, 'C', 1]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(19090, 19091)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 25, '%', 1],[63.0, 60, '%', 1],[36.0, 350, 'C', 1]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(19093, 19093)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 25, '%', 1],[66.0, 60, '%', 1],[39.0, 350, 'C', 1]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(19095, 19095)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 25, '%', 1],[68.0, 60, '%', 1],[41.0, 350, 'C', 1]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(19097, 19097)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 25, '%', 1],[70.0, 60, '%', 1],[43.0, 350, 'C', 1]

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(19176, 19176)
 Quantum-well (Q<missing VAR>W) states in it nonmagnetic metal layers contained inmagnetic multilayers are known to be important in spin-dependent transport, butthe role of Q<missing VAR>W states in it magnetic layers remains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(19229, 19229)
 Quantum-well (Q<missing VAR>W) states in it nonmagnetic metal layers contained inmagnetic multilayers are known to be important in spin-dependent transport, butthe role of Q<missing VAR>W states in it magnetic layers remains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(19270, 19270)
 Here weidentify the conditions and mechanisms for resonant tunneling through Q<missing VAR>W statesin magnetic layers and determine candidate structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/FeO/Fe/Cr
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(19314, 19324)
 We reportfirst-principles calculations of spin-dependent transport in epitaxialFe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/MgO/Fe/Cr
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(19328, 19335)
 We reportfirst-principles calculations of spin-dependent transport in epitaxialFe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(19356, 19356)
 We demonstrate theformation of sharp Q<missing VAR>W states in the Fe layer and show discrete conductancejumps as the Q<missing VAR>W states enter the transport window with increasing bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(19364, 19364)
 We demonstrate theformation of sharp Q<missing VAR>W states in the Fe layer and show discrete conductancejumps as the Q<missing VAR>W states enter the transport window with increasing bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(19384, 19384)
 We demonstrate theformation of sharp Q<missing VAR>W states in the Fe layer and show discrete conductancejumps as the Q<missing VAR>W states enter the transport window with increasing bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(19403, 19403)
 Atresonance, the current increases by one to two orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(19582, 19583)
 We present spin transfer switching results for MgO based magnetic tunnelingjunctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to150% and low intrinsic switching current density of 2-3 x<missing VAR> 10 MA/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 150, '%', 0],[61.0, 10, 'MA', 0],[233.0, 0.22, 'for', 3],[239.0, 0.46, 'for', 3]

Al
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(19680, 19680)
 Theswitching data are compared to those obtained on similar MTJ nanostructureswith AlOx barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 150, '%', 1],[36.0, 10, 'MA', 1],[136.0, 0.22, 'for', 2],[142.0, 0.46, 'for', 2]

MgO
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(19704, 19705)
 It is observed that the switching current density for MgObased MTJs is 3-4 times smaller than that for AlOx based MTJs, and that can beattributed to higher tunneling spin polarization (T<missing VAR>SP) in MgO based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 150, '%', 2],[60.0, 10, 'MA', 2],[111.0, 0.22, 'for', 1],[117.0, 0.46, 'for', 1]

Al
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(19730, 19730)
 It is observed that the switching current density for MgObased MTJs is 3-4 times smaller than that for AlOx based MTJs, and that can beattributed to higher tunneling spin polarization (T<missing VAR>SP) in MgO based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 150, '%', 2],[86.0, 10, 'MA', 2],[86.0, 0.22, 'for', 1],[92.0, 0.46, 'for', 1]

P
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(19764, 19764)
 It is observed that the switching current density for MgObased MTJs is 3-4 times smaller than that for AlOx based MTJs, and that can beattributed to higher tunneling spin polarization (T<missing VAR>SP) in MgO based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 150, '%', 2],[120.0, 10, 'MA', 2],[52.0, 0.22, 'for', 1],[58.0, 0.46, 'for', 1]

MgO
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(19769, 19770)
 It is observed that the switching current density for MgObased MTJs is 3-4 times smaller than that for AlOx based MTJs, and that can beattributed to higher tunneling spin polarization (T<missing VAR>SP) in MgO based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 150, '%', 2],[125.0, 10, 'MA', 2],[46.0, 0.22, 'for', 1],[52.0, 0.46, 'for', 1]

In
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(19779, 19779)
 Inaddition, we report a qualitative study of T<missing VAR>SP for a set of samples, rangingfrom 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the T<missing VAR>SP (atfinite bias) responsible for the current-driven magnetization switching issuppressed as compared to zero-bias tunneling spin polarization determined fromTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 150, '%', 3],[135.0, 10, 'MA', 3],[37.0, 0.22, 'for', 0],[43.0, 0.46, 'for', 0]

SP
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(19798, 19799)
 Inaddition, we report a qualitative study of T<missing VAR>SP for a set of samples, rangingfrom 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the T<missing VAR>SP (atfinite bias) responsible for the current-driven magnetization switching issuppressed as compared to zero-bias tunneling spin polarization determined fromTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 150, '%', 3],[154.0, 10, 'MA', 3],[17.0, 0.22, 'for', 0],[23.0, 0.46, 'for', 0]

Al
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(19818, 19818)
 Inaddition, we report a qualitative study of T<missing VAR>SP for a set of samples, rangingfrom 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the T<missing VAR>SP (atfinite bias) responsible for the current-driven magnetization switching issuppressed as compared to zero-bias tunneling spin polarization determined fromTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 150, '%', 3],[174.0, 10, 'MA', 3],[2.0, 0.22, 'for', 0],[4.0, 0.46, 'for', 0]

MgO
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(19824, 19825)
 Inaddition, we report a qualitative study of T<missing VAR>SP for a set of samples, rangingfrom 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the T<missing VAR>SP (atfinite bias) responsible for the current-driven magnetization switching issuppressed as compared to zero-bias tunneling spin polarization determined fromTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 150, '%', 3],[180.0, 10, 'MA', 3],[8.0, 0.22, 'for', 0],[2.0, 0.46, 'for', 0]

SP
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(19843, 19844)
 Inaddition, we report a qualitative study of T<missing VAR>SP for a set of samples, rangingfrom 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the T<missing VAR>SP (atfinite bias) responsible for the current-driven magnetization switching issuppressed as compared to zero-bias tunneling spin polarization determined fromTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 150, '%', 3],[199.0, 10, 'MA', 3],[27.0, 0.22, 'for', 0],[21.0, 0.46, 'for', 0]

Fe/Mg4Al
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(19916, 19920)
Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[79.0, 429, '%', 2],[95.0, 1, ',', 2],[97.0, 34, '%', 2],[101.0, 10, 'K', 2],[226.0, 125, '%', 3]

MgAl2O4
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(19938, 19942)
 Spinel MgAl2O4 and family oxides are emerging barrier materials useful formagnetic tunnel junctions (MTJs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 429, '%', 1],[73.0, 1, ',', 1],[75.0, 34, '%', 1],[79.0, 10, 'K', 1],[204.0, 125, '%', 2]

Fe/MgAl2O4
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(20028, 20034)
 We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[29.0, 429, '%', 0],[13.0, 1, ',', 0],[11.0, 34, '%', 0],[7.0, 10, 'K', 0],[112.0, 125, '%', 1]

Mg4Al
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(20060, 20062)
 We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.8,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 429, '%', 0],[45.0, 1, ',', 0],[43.0, 34, '%', 0],[39.0, 10, 'K', 0],[84.0, 125, '%', 1]

Fe/MgO
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(20106, 20109)
 Resistance oscillations with a MTJ barrier thickness of 0.3-nm weresignificantly enhanced compared to those of a Fe/MgO/Fe(001) MTJ, resulting ina large TMR oscillation peak-to-valley difference of 125% at RT.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[107.0, 429, '%', 1],[91.0, 1, ',', 1],[89.0, 34, '%', 1],[85.0, 10, 'K', 1],[37.0, 125, '%', 0]

V
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(20219, 20219)
 Thedifferential conductance spectra were symmetric with bias polarity, and thespectrum in the parallel magnetization state at low temperature demonstratesignificant peaks within broad local minima at 0.2-0.6 V, indicating improvedbarrier interfaces by the Mg4Al-Ox barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 429, '%', 2],[204.0, 1, ',', 2],[202.0, 34, '%', 2],[198.0, 10, 'K', 2],[73.0, 125, '%', 1]

Mg4Al
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(20235, 20237)
 Thedifferential conductance spectra were symmetric with bias polarity, and thespectrum in the parallel magnetization state at low temperature demonstratesignificant peaks within broad local minima at 0.2-0.6 V, indicating improvedbarrier interfaces by the Mg4Al-Ox barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.8,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 429, '%', 2],[220.0, 1, ',', 2],[218.0, 34, '%', 2],[214.0, 10, 'K', 2],[89.0, 125, '%', 1]

S
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(20560, 20560)
 Recently, organic semiconductors were inserted into nanometersized tunnel junctions allowing enhancement of spin reversal, giantmagneto-resistance behaviour was observed in single non-magnetic moleculescoupled to magnetic electrodes, and the use of the quantum tunnellingproperties of single-molecule magnets (SM<missing VAR>Ms) in hybrid devices was proposed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 300, '%', 2],[190.0, 1, 'K', 2]

SWCN
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(20623, 20626)
Herein, we present an original device in which a non-magnetic molecular quantumdot, made of a single-wall carbon nanotube (SWCNT) contacted with non-magneticelectrodes, is laterally coupled via supramolecular interactions to a TbPc2-SMM(Pc  phthalocyanine), which provides a localized magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 300, '%', 1],[124.0, 1, 'K', 1]

Tb
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(20658, 20658)
Herein, we present an original device in which a non-magnetic molecular quantumdot, made of a single-wall carbon nanotube (SWCNT) contacted with non-magneticelectrodes, is laterally coupled via supramolecular interactions to a TbPc2-SMM(Pc  phthalocyanine), which provides a localized magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 300, '%', 1],[92.0, 1, 'K', 1]

S
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(20662, 20662)
Herein, we present an original device in which a non-magnetic molecular quantumdot, made of a single-wall carbon nanotube (SWCNT) contacted with non-magneticelectrodes, is laterally coupled via supramolecular interactions to a TbPc2-SMM(Pc  phthalocyanine), which provides a localized magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 300, '%', 1],[88.0, 1, 'K', 1]

SWCN
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(20697, 20700)
 Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 300, '%', 0],[50.0, 1, 'K', 0]

S
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(20745, 20745)
 Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 300, '%', 0],[5.0, 1, 'K', 0]

NbSrTiO3
###Colossal Magnetoresistance Manganites and Related Prototype Devices|Yukuai Liu,Yuewei Yin,Xiaoguang Li###
(20897, 20901)
 We review colossal magnetoresistance in single phase manganites, as relatedto the field sensitive spin charge interactions and phase separation; therectifying property and negative/positive magnetoresistance inmanganite/NbSrTiO3 pn junctions in relation to the special interfaceelectronic structure; magnetoelectric coupling in manganite/ferroelectricstructures that takes advantage of strain, carrier density, and magnetic fieldsensitivity; tunneling magnetoresistance in tunnel junctions with dielectric,ferroelectric, and organic semiconductor spacers using the fully spin polarizednature of manganites; and the effect of particle size on magnetic properties inmanganite nanoparticles<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-Dependent Coulomb Blockade in Ferromagnet/Normal-Metal/Ferromagnet Double Tunnel Junctions|Hiroshi Imamura,Saburo Takahashi,Sadamichi Maekawa###
(21239, 21239)
 In this region, the tunnelmagnetoresistance oscillates as a function of bias voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions|Pravin Khanal,Bowei Zhou,Hamid Almasi,Ali Habiboglu,Magda Andrade,Jack O'Brien,Arthur Enriquez,Carter Eckel,Christopher Mastrangelo,Wei-Gang Wang###
(21336, 21341)
Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgO
###Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions|Pravin Khanal,Bowei Zhou,Hamid Almasi,Ali Habiboglu,Magda Andrade,Jack O'Brien,Arthur Enriquez,Carter Eckel,Christopher Mastrangelo,Wei-Gang Wang###
(21366, 21367)
 The interfacial oxidation level and thermodynamic properties of the MgO-basedperpendicular magnetic tunneling junctions are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions|Pravin Khanal,Bowei Zhou,Hamid Almasi,Ali Habiboglu,Magda Andrade,Jack O'Brien,Arthur Enriquez,Carter Eckel,Christopher Mastrangelo,Wei-Gang Wang###
(21404, 21405)
 Thesymmetry-conserved tunneling effect depends sensitively on the MgO adatomenergy during the R<missing VAR>F sputtering, as well as the thermal stability of thestructure during the post-growth thermal annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions|Pravin Khanal,Bowei Zhou,Hamid Almasi,Ali Habiboglu,Magda Andrade,Jack O'Brien,Arthur Enriquez,Carter Eckel,Christopher Mastrangelo,Wei-Gang Wang###
(21417, 21417)
 Thesymmetry-conserved tunneling effect depends sensitively on the MgO adatomenergy during the R<missing VAR>F sputtering, as well as the thermal stability of thestructure during the post-growth thermal annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V3
###Spin flip scattering in magnetic junctions|F. Guinea###
(21748, 21749)
 ii) Magnon assisted tunneling reduces themagnetoresistance as T<missing VAR>3/2, and leads to a non ohmic contribution to theresistance which goes as V3/2, iii) Surface antiferromagnetic magnons,which may appear if the interface has different magnetic properties from thebulk, gives rise to T<missing VAR>2 and V2 contributions to the magnetoresistance andresistance, respectively, and, iv) Coulomb blockade effects may enhance themagnetoresistance, when transport is dominated by cotunneling processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 2, ',', 0],[2.0, 2, ',', 0]

V2
###Spin flip scattering in magnetic junctions|F. Guinea###
(21804, 21805)
 ii) Magnon assisted tunneling reduces themagnetoresistance as T<missing VAR>3/2, and leads to a non ohmic contribution to theresistance which goes as V3/2, iii) Surface antiferromagnetic magnons,which may appear if the interface has different magnetic properties from thebulk, gives rise to T<missing VAR>2 and V2 contributions to the magnetoresistance andresistance, respectively, and, iv) Coulomb blockade effects may enhance themagnetoresistance, when transport is dominated by cotunneling processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, ',', 0],[53.0, 2, ',', 0]

CrSBr
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(22003, 22005)
 Here, we demonstrate a new concept for programmable MTJoperation via strain control of the magnetic states of CrSBr, a layeredantiferromagnetic semiconductor used as the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrSBr
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(22032, 22034)
 Switching the CrSBrfrom antiferromagnetic to ferromagnetic order generates a giant tunnelingmagnetoresistance ratio without external magnetic field at temperatures up to 140 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(22080, 22080)
 Switching the CrSBrfrom antiferromagnetic to ferromagnetic order generates a giant tunnelingmagnetoresistance ratio without external magnetic field at temperatures up to 140 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions|Li Ming Loong,Xuepeng Qiu,Zhi Peng Neo,Praveen Deorani,Yang Wu,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(22292, 22293)
Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions|Li Ming Loong,Xuepeng Qiu,Zhi Peng Neo,Praveen Deorani,Yang Wu,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(22526, 22527)
 We furthercorrelate this strain-enhanced TMR with coherent spin tunneling through the MgObarrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions|Li Ming Loong,Xuepeng Qiu,Zhi Peng Neo,Praveen Deorani,Yang Wu,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(22563, 22563)
 Moreover, the strain-enhanced TMR is analyzed using non-equilibriumGreens<missing VAR> function (NEGF) quantum transport calculations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions|Li Ming Loong,Xuepeng Qiu,Zhi Peng Neo,Praveen Deorani,Yang Wu,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(22566, 22566)
 Moreover, the strain-enhanced TMR is analyzed using non-equilibriumGreens<missing VAR> function (NEGF) quantum transport calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(22699, 22699)
 We investigate the micromechanical exfoliation and van der Waals (vdW)assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe0.25TaS2
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(22713, 22717)
 We investigate the micromechanical exfoliation and van der Waals (vdW)assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(22723, 22723)
 The vdW interlayercoupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation offlakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(22734, 22734)
 The vdW interlayercoupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation offlakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe0.25TaS2
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(22742, 22746)
 The vdW interlayercoupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation offlakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(22761, 22761)
 A vdW junction between the cleaved crystal surfaces is constructed bydry transfer method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(22852, 22852)
 We observe tunnel magnetoresistance in the resultingjunction under an external magnetic field applied perpendicular to the plane,demonstrating spin-polarized tunneling between the ferromagnetic layeredmaterial through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/EuS
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(22884, 22888)
Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[55.0, 64, '%', 2],[59.0, 4.2, 'K', 2]

FeCo/MgO/EuS
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(22909, 22916)
 We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgObuffered Si (100).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[27.0, 64, '%', 1],[31.0, 4.2, 'K', 1]

MgO
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(22920, 22921)
 We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgObuffered Si (100).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 64, '%', 1],[26.0, 4.2, 'K', 1]

Si
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(22926, 22926)
 We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgObuffered Si (100).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 64, '%', 1],[21.0, 4.2, 'K', 1]

MgO
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(22969, 22970)
 Anunexpected fast drop of magnetoresistance was recorded for MgO thickness above1 nm, which is attributed to the forced nonspecular conductance across the EuSconduction band minimum located at the X<missing VAR> point, rather than the desired Delta1conductance centered around the Gamma point.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 64, '%', 1],[22.0, 4.2, 'K', 1]

EuS
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(23002, 23003)
 Anunexpected fast drop of magnetoresistance was recorded for MgO thickness above1 nm, which is attributed to the forced nonspecular conductance across the EuSconduction band minimum located at the X<missing VAR> point, rather than the desired Delta1conductance centered around the Gamma point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 64, '%', 1],[55.0, 4.2, 'K', 1]

Co2Cr0.6Fe0.4Al
###Magnetic tunneling junctions with the Heusler compound Co_2Cr_{0.6}Fe_{0.4}Al|A. Conca,S. Falk,G. Jakob,M. Jourdan,H. Adrian###
(23070, 23076)
Magnetic tunneling junctions with the Heusler compound Co2Cr0.6Fe0.4Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 4, 'K', 3],[103.0, 300, 'K', 3]

AlO
###Magnetic tunneling junctions with the Heusler compound Co_2Cr_{0.6}Fe_{0.4}Al|A. Conca,S. Falk,G. Jakob,M. Jourdan,H. Adrian###
(23132, 23133)
The junctions are deposited by magnetron dc sputtering using shadow masktechniques with AlOx<missing VAR> as a barrier and cobalt as counter electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 4, 'K', 1],[46.0, 300, 'K', 1]

VS
###Magnetic tunneling junctions with the Heusler compound Co_2Cr_{0.6}Fe_{0.4}Al|A. Conca,S. Falk,G. Jakob,M. Jourdan,H. Adrian###
(23225, 23226)
 VSM<missing VAR> measurements were carried out to examine the magnetic propertiesof the samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 4, 'K', 2],[46.0, 300, 'K', 2]

MgO
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23263, 23264)
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 67, '%', 2],[173.0, 250, 'degree', 2],[263.0, 350, 'oC', 4],[293.0, 78, '%', 4]

CoFe/Pd
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23278, 23281)
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[119.0, 67, '%', 2],[156.0, 250, 'degree', 2],[246.0, 350, 'oC', 4],[276.0, 78, '%', 4]

Co20Fe60B20
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23309, 23314)
 The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layerinsertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetictunnel junctions (MTJs) with CoFe/Pd multilayer electrodes.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 67, '%', 1],[123.0, 250, 'degree', 1],[213.0, 350, 'oC', 3],[243.0, 78, '%', 3]

Fe
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23318, 23318)
 The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layerinsertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetictunnel junctions (MTJs) with CoFe/Pd multilayer electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 67, '%', 1],[119.0, 250, 'degree', 1],[209.0, 350, 'oC', 3],[239.0, 78, '%', 3]

MgO
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23342, 23343)
 The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layerinsertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetictunnel junctions (MTJs) with CoFe/Pd multilayer electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 67, '%', 1],[94.0, 250, 'degree', 1],[184.0, 350, 'oC', 3],[214.0, 78, '%', 3]

CoFe/Pd
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23362, 23365)
 The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layerinsertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetictunnel junctions (MTJs) with CoFe/Pd multilayer electrodes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[35.0, 67, '%', 1],[72.0, 250, 'degree', 1],[162.0, 350, 'oC', 3],[192.0, 78, '%', 3]

CoFeB/MgO/Fe
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23387, 23394)
 TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[6.0, 67, '%', 0],[43.0, 250, 'degree', 0],[133.0, 350, 'oC', 2],[163.0, 78, '%', 2]

(Ta)
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23411, 23413)
 TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 67, '%', 0],[24.0, 250, 'degree', 0],[114.0, 350, 'oC', 2],[144.0, 78, '%', 2]

C
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23422, 23422)
 TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 67, '%', 0],[15.0, 250, 'degree', 0],[105.0, 350, 'oC', 2],[135.0, 78, '%', 2]

Ta
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23434, 23434)
 TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 67, '%', 0],[3.0, 250, 'degree', 0],[93.0, 350, 'oC', 2],[123.0, 78, '%', 2]

C
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23439, 23439)
 TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 67, '%', 0],[2.0, 250, 'degree', 0],[88.0, 350, 'oC', 2],[118.0, 78, '%', 2]

CoFe(B)
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23469, 23473)
 The degradation ofthe TMR ratio may be related to crystallization of CoFe(B) into fcc(111) orbcc(011) texture result-ing from diffusion of B into Pd layers.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 67, '%', 1],[32.0, 250, 'degree', 1],[54.0, 350, 'oC', 1],[84.0, 78, '%', 1]

B
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23502, 23502)
 The degradation ofthe TMR ratio may be related to crystallization of CoFe(B) into fcc(111) orbcc(011) texture result-ing from diffusion of B into Pd layers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 67, '%', 1],[65.0, 250, 'degree', 1],[25.0, 350, 'oC', 1],[55.0, 78, '%', 1]

Pd
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23506, 23506)
 The degradation ofthe TMR ratio may be related to crystallization of CoFe(B) into fcc(111) orbcc(011) texture result-ing from diffusion of B into Pd layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 67, '%', 1],[69.0, 250, 'degree', 1],[21.0, 350, 'oC', 1],[51.0, 78, '%', 1]

CoFe/Pd
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23539, 23542)
 MTJs which werein-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayershowed TMR ratio of 78% by post annealing at Ta 200 degree C.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[139.0, 67, '%', 2],[102.0, 250, 'degree', 2],[12.0, 350, 'oC', 0],[15.0, 78, '%', 0]

Ta
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23568, 23568)
 MTJs which werein-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayershowed TMR ratio of 78% by post annealing at Ta 200 degree C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 67, '%', 2],[131.0, 250, 'degree', 2],[41.0, 350, 'oC', 0],[11.0, 78, '%', 0]

C
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(23574, 23574)
 MTJs which werein-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayershowed TMR ratio of 78% by post annealing at Ta 200 degree C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 67, '%', 2],[137.0, 250, 'degree', 2],[47.0, 350, 'oC', 0],[17.0, 78, '%', 0]

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23595, 23596)
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 3, ',', 5],[257.0, 300, 'K', 5],[260.0, 10, 'K', 5],[264.0, 87, '%', 5],[270.0, 165, '%', 5]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23600, 23603)
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 3, ',', 5],[250.0, 300, 'K', 5],[253.0, 10, 'K', 5],[257.0, 87, '%', 5],[263.0, 165, '%', 5]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23622, 23625)
 The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material forspin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, ',', 4],[228.0, 300, 'K', 4],[231.0, 10, 'K', 4],[235.0, 87, '%', 4],[241.0, 165, '%', 4]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23645, 23645)
 The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material forspin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 3, ',', 4],[208.0, 300, 'K', 4],[211.0, 10, 'K', 4],[215.0, 87, '%', 4],[221.0, 165, '%', 4]

MgO
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23702, 23703)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 3, ',', 2],[150.0, 300, 'K', 2],[153.0, 10, 'K', 2],[157.0, 87, '%', 2],[163.0, 165, '%', 2]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23722, 23725)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 3, ',', 2],[128.0, 300, 'K', 2],[131.0, 10, 'K', 2],[135.0, 87, '%', 2],[141.0, 165, '%', 2]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23735, 23735)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 3, ',', 2],[118.0, 300, 'K', 2],[121.0, 10, 'K', 2],[125.0, 87, '%', 2],[131.0, 165, '%', 2]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23763, 23766)
 X<missing VAR>-ray and electron diffractionmeasurements show that the (001) CoFeCrAl electrode films with atomically flatsurfaces have a B2-ordered phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3, ',', 1],[87.0, 300, 'K', 1],[90.0, 10, 'K', 1],[94.0, 87, '%', 1],[100.0, 165, '%', 1]

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23785, 23786)
 X<missing VAR>-ray and electron diffractionmeasurements show that the (001) CoFeCrAl electrode films with atomically flatsurfaces have a B2-ordered phase.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3, ',', 1],[67.0, 300, 'K', 1],[70.0, 10, 'K', 1],[74.0, 87, '%', 1],[80.0, 165, '%', 1]

MgO
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23896, 23897)
 Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 3, ',', 1],[43.0, 300, 'K', 1],[40.0, 10, 'K', 1],[36.0, 87, '%', 1],[30.0, 165, '%', 1]

C
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23970, 23970)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 3, ',', 3],[117.0, 300, 'K', 3],[114.0, 10, 'K', 3],[110.0, 87, '%', 3],[104.0, 165, '%', 3]

Co
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23989, 23989)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, ',', 3],[136.0, 300, 'K', 3],[133.0, 10, 'K', 3],[129.0, 87, '%', 3],[123.0, 165, '%', 3]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(23993, 23993)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 3, ',', 3],[140.0, 300, 'K', 3],[137.0, 10, 'K', 3],[133.0, 87, '%', 3],[127.0, 165, '%', 3]

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24001, 24002)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 3, ',', 3],[148.0, 300, 'K', 3],[145.0, 10, 'K', 3],[141.0, 87, '%', 3],[135.0, 165, '%', 3]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24006, 24009)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 3, ',', 3],[153.0, 300, 'K', 3],[150.0, 10, 'K', 3],[146.0, 87, '%', 3],[140.0, 165, '%', 3]

Y
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24031, 24031)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3, ',', 3],[178.0, 300, 'K', 3],[175.0, 10, 'K', 3],[171.0, 87, '%', 3],[165.0, 165, '%', 3]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24040, 24040)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 3, ',', 3],[187.0, 300, 'K', 3],[184.0, 10, 'K', 3],[180.0, 87, '%', 3],[174.0, 165, '%', 3]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24042, 24042)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 3, ',', 3],[189.0, 300, 'K', 3],[186.0, 10, 'K', 3],[182.0, 87, '%', 3],[176.0, 165, '%', 3]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24062, 24062)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 3, ',', 4],[209.0, 300, 'K', 4],[206.0, 10, 'K', 4],[202.0, 87, '%', 4],[196.0, 165, '%', 4]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24064, 24064)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 3, ',', 4],[211.0, 300, 'K', 4],[208.0, 10, 'K', 4],[204.0, 87, '%', 4],[198.0, 165, '%', 4]

C
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24078, 24078)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 3, ',', 4],[225.0, 300, 'K', 4],[222.0, 10, 'K', 4],[218.0, 87, '%', 4],[212.0, 165, '%', 4]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24096, 24096)
 Finally, the effectof the Cr-Fe swap disorder on the ability for electronic states to allowcoherent electron tunneling is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 3, ',', 5],[243.0, 300, 'K', 5],[240.0, 10, 'K', 5],[236.0, 87, '%', 5],[230.0, 165, '%', 5]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24098, 24098)
 Finally, the effectof the Cr-Fe swap disorder on the ability for electronic states to allowcoherent electron tunneling is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 3, ',', 5],[245.0, 300, 'K', 5],[242.0, 10, 'K', 5],[238.0, 87, '%', 5],[232.0, 165, '%', 5]

S
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(24216, 24216)
 Here, we demonstrate that the tunnel magneto-Seebeckeffect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic1 state and off to 0 by simply changing the magnetic state of the CoFeBelectrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0, 'by', 0],[276.0, 1821, 'to', 4],[523.0, -3000, '%', 7]

CoFeB/MgO/CoFeB
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(24221, 24230)
 Here, we demonstrate that the tunnel magneto-Seebeckeffect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic1 state and off to 0 by simply changing the magnetic state of the CoFeBelectrodes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[30.0, 0, 'by', 0],[262.0, 1821, 'to', 4],[509.0, -3000, '%', 7]

CoFeB
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(24276, 24278)
 Here, we demonstrate that the tunnel magneto-Seebeckeffect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic1 state and off to 0 by simply changing the magnetic state of the CoFeBelectrodes.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0, 'by', 0],[214.0, 1821, 'to', 4],[461.0, -3000, '%', 7]

S
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(24594, 24594)
 Our results showthat the signal crosses zero and can be adjusted by tuning a bias voltage thatis applied between the electrodes of the junction; hence, the name of theeffect is bias-enhanced tunnel magneto-Seebeck effect (bTMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 0, 'by', 5],[102.0, 1821, 'to', 1],[145.0, -3000, '%', 2]

S
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(24630, 24630)
 Via the spin- andenergy-dependent transmission of electrons in the junction, the bTMS effect canbe configured using the bias voltage with much higher control than the tunnelmagnetoresistance (TMR) and even completely suppressed for only one magneticconfiguration, which is either parallel (P) or anti-parallel (AP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 0, 'by', 6],[138.0, 1821, 'to', 2],[109.0, -3000, '%', 1]

(P)
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(24700, 24702)
 Via the spin- andenergy-dependent transmission of electrons in the junction, the bTMS effect canbe configured using the bias voltage with much higher control than the tunnelmagnetoresistance (TMR) and even completely suppressed for only one magneticconfiguration, which is either parallel (P) or anti-parallel (AP).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[440.0, 0, 'by', 6],[208.0, 1821, 'to', 2],[37.0, -3000, '%', 1]

P
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(24712, 24712)
 Via the spin- andenergy-dependent transmission of electrons in the junction, the bTMS effect canbe configured using the bias voltage with much higher control than the tunnelmagnetoresistance (TMR) and even completely suppressed for only one magneticconfiguration, which is either parallel (P) or anti-parallel (AP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[452.0, 0, 'by', 6],[220.0, 1821, 'to', 2],[27.0, -3000, '%', 1]

S
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(24834, 24834)
 Moreover, our measurements are a step towards the experimentalrealization of high TMS ratios, which are predicted for specific Co-Fecompositions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[574.0, 0, 'by', 9],[342.0, 1821, 'to', 5],[95.0, -3000, '%', 2]

Co
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(24849, 24849)
 Moreover, our measurements are a step towards the experimentalrealization of high TMS ratios, which are predicted for specific Co-Fecompositions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[589.0, 0, 'by', 9],[357.0, 1821, 'to', 5],[110.0, -3000, '%', 2]

Fe
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(24851, 24851)
 Moreover, our measurements are a step towards the experimentalrealization of high TMS ratios, which are predicted for specific Co-Fecompositions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[591.0, 0, 'by', 9],[359.0, 1821, 'to', 5],[112.0, -3000, '%', 2]

LaAlO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(24877, 24880)
Spin-dependent tunneling through high-k<missing VAR> LaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 77, '%', 2]

LaAlO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(24897, 24900)
 We report on the use of the LaAlO3 (L<missing VAR>AO) high-k<missing VAR> dielectric as a tunnelbarrier in magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 77, '%', 1]

O
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(24905, 24905)
 We report on the use of the LaAlO3 (L<missing VAR>AO) high-k<missing VAR> dielectric as a tunnelbarrier in magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 77, '%', 1]

La2
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(24951, 24952)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 77, '%', 0]

Sr1
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(24955, 24956)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 77, '%', 0]

MnO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(24959, 24961)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 77, '%', 0]

O/La2
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(24965, 24968)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[27.0, 77, '%', 0]

Sr1
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(24971, 24972)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 77, '%', 0]

MnO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(24975, 24977)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 77, '%', 0]

La2
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25009, 25010)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 77, '%', 0]

Sr1
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25013, 25014)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 77, '%', 0]

MnO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25017, 25019)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 77, '%', 0]

O
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25023, 25023)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 77, '%', 0]

La2
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25039, 25040)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 77, '%', 1]

Sr1
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25043, 25044)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 77, '%', 1]

MnO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25047, 25049)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 77, '%', 1]

O/Co
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25053, 25055)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 77, '%', 1]

Co
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25084, 25084)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 77, '%', 1]

O
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25096, 25096)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 77, '%', 1]

La2
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25120, 25121)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 77, '%', 1]

Sr1
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25124, 25125)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 77, '%', 1]

MnO3/S
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25128, 25132)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[133.0, 77, '%', 1]

O/Co
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(25134, 25136)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[139.0, 77, '%', 1]

Fe/ZnSe
###Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure|J. Peralta-Ramos,A. M. Llois###
(25171, 25174)
Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure|J. Peralta-Ramos,A. M. Llois###
(25204, 25204)
 In this contribution, we calculate the spin-dependent ballistic and coherenttransport through epitaxial Fe/ZnSe (001) simple and double magnetic tunneljunctions with two different interface terminations Zn-terminated andSe-terminated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/ZnSe
###Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure|J. Peralta-Ramos,A. M. Llois###
(25234, 25237)
 In this contribution, we calculate the spin-dependent ballistic and coherenttransport through epitaxial Fe/ZnSe (001) simple and double magnetic tunneljunctions with two different interface terminations Zn-terminated andSe-terminated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Zn
###Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure|J. Peralta-Ramos,A. M. Llois###
(25266, 25266)
 In this contribution, we calculate the spin-dependent ballistic and coherenttransport through epitaxial Fe/ZnSe (001) simple and double magnetic tunneljunctions with two different interface terminations Zn-terminated andSe-terminated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure|J. Peralta-Ramos,A. M. Llois###
(25273, 25273)
 In this contribution, we calculate the spin-dependent ballistic and coherenttransport through epitaxial Fe/ZnSe (001) simple and double magnetic tunneljunctions with two different interface terminations Zn-terminated andSe-terminated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25469, 25472)
Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO3 barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 500, '%', 2],[162.0, 290, '%', 2]

SrTiO3
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25520, 25523)
 We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented magnetic tunnel junctions (MTJs) with SrTiO3 barriers,Co/SrTiO3/Co(111) and Ni/SrTiO3/Ni(111).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 500, '%', 1],[111.0, 290, '%', 1]

Co/SrTiO3
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25529, 25534)
 We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented magnetic tunnel junctions (MTJs) with SrTiO3 barriers,Co/SrTiO3/Co(111) and Ni/SrTiO3/Ni(111).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[74.0, 500, '%', 1],[100.0, 290, '%', 1]

Ni/SrTiO3
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25543, 25548)
 We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented magnetic tunnel junctions (MTJs) with SrTiO3 barriers,Co/SrTiO3/Co(111) and Ni/SrTiO3/Ni(111).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 500, '%', 1],[86.0, 290, '%', 1]

Co
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25585, 25585)
 Our analysis combining thefirst-principles calculation and the Landauer formula shows that the Co-basedMTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value(290%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 500, '%', 0],[49.0, 290, '%', 0]

Ni
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25616, 25616)
 Our analysis combining thefirst-principles calculation and the Landauer formula shows that the Co-basedMTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value(290%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 500, '%', 0],[18.0, 290, '%', 0]

SrTiO3
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25653, 25656)
 Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 500, '%', 1],[19.0, 290, '%', 1]

Co
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25679, 25679)
 Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 500, '%', 1],[45.0, 290, '%', 1]

(Ni)
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25681, 25683)
 Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 500, '%', 1],[47.0, 290, '%', 1]

Co
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25694, 25694)
 Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 500, '%', 1],[60.0, 290, '%', 1]

(Ni)
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25696, 25698)
 Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 500, '%', 1],[62.0, 290, '%', 1]

Co
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25775, 25775)
 We find that this band folding gives a half-metallic band structurein the Lambda1 state of Co (Ni) and the coherent tunneling of such ahalf-metallic Lambda1 state yields a high TMR ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 500, '%', 2],[141.0, 290, '%', 2]

(Ni)
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25777, 25779)
 We find that this band folding gives a half-metallic band structurein the Lambda1 state of Co (Ni) and the coherent tunneling of such ahalf-metallic Lambda1 state yields a high TMR ratio.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 500, '%', 2],[143.0, 290, '%', 2]

Co
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25845, 25845)
 We also reveal thatthe difference in the TMR ratio between the Co- and Ni-based MTJs can beunderstood by different s<missing VAR>-orbital weights in the Lambda1 band at theFermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 500, '%', 3],[211.0, 290, '%', 3]

Ni
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(25850, 25850)
 We also reveal thatthe difference in the TMR ratio between the Co- and Ni-based MTJs can beunderstood by different s<missing VAR>-orbital weights in the Lambda1 band at theFermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 500, '%', 3],[216.0, 290, '%', 3]

MgO
###Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Kalon Gopinadhan,Charanjit S. Bhatia,Hyunsoo Yang###
(25916, 25917)
Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Kalon Gopinadhan,Charanjit S. Bhatia,Hyunsoo Yang###
(25932, 25933)
 The capacitance of MgO based magnetic tunnel junctions (MTJs) has beenobserved to be magnetic field dependent.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Cl)
###Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Kalon Gopinadhan,Charanjit S. Bhatia,Hyunsoo Yang###
(25996, 25998)
 We propose an equivalent circuit forthe MTJs with a parallel-leaky capacitance (Cl) across the series combinationof geometric and interfacial capacitance.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Kalon Gopinadhan,Charanjit S. Bhatia,Hyunsoo Yang###
(26043, 26043)
 The analysis of junctions withdifferent tunneling magnetoresistance values suggests higher Cl for low TMRjunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Kalon Gopinadhan,Charanjit S. Bhatia,Hyunsoo Yang###
(26100, 26100)
Fitting with Maxwell-Wagner capacitance model validates the R<missing VAR>C parallel networkmodel for MTJs and the extracted field dependent parameters match with theexperimental values.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO/MgO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(26181, 26185)
Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[84.0, 96, '%', 2],[203.0, 1.3, 'A', 3]

Fe/ZnO/MgO/Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(26196, 26204)
 We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[65.0, 96, '%', 1],[184.0, 1.3, 'A', 2]

ZnO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(26234, 26235)
 We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 96, '%', 1],[153.0, 1.3, 'A', 2]

Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(26335, 26335)
 We observe a high magnetoresistance ratio up to 96% at roomtemperature (RT) and find that these MTJs have asymmetric current-voltagecharacteristics, and their rectifying performances are largely dependent on themagnetization alignments of the Fe electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 96, '%', 0],[53.0, 1.3, 'A', 1]

W
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(26390, 26390)
 Diode responsibilities at azero-bias voltage (beta0), which is an important performance index forharvesting applications, are observed up to 1.3 A/W at RT in the antiparallelalignment of the magnetizations while maintaining rather low resistance-area(R<missing VAR>A) products (a few tens of k<missing VAR>Omegamum<missing VAR>2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 96, '%', 1],[2.0, 1.3, 'A', 0]

(Fe)
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(26466, 26468)
 Even with the same top andbottom electrodes (Fe), the obtained beta0 values are comparable to thoseof reported high-performance tunnel diodes consisting of amorphous bilayertunnel barriers with polycrystalline dissimilar electrodes.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 96, '%', 2],[78.0, 1.3, 'A', 1]

ZnO/MgO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(26536, 26540)
 This stronglysuggests that the epitaxial ZnO/MgO bilayer tunnel barrier is effective forenhancing the beta0 without significant increase in the R<missing VAR>A.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[267.0, 96, '%', 3],[148.0, 1.3, 'A', 2]

In
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(26576, 26576)
 In addition,we demonstrate that a zero-bias anomaly in thetunnel conductance, whichoriginates from the magnon excitations at the Fe/barrier interfaces, plays acrucial role in observed spin-dependent diode performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 96, '%', 4],[188.0, 1.3, 'A', 3]

Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(26620, 26620)
 In addition,we demonstrate that a zero-bias anomaly in thetunnel conductance, whichoriginates from the magnon excitations at the Fe/barrier interfaces, plays acrucial role in observed spin-dependent diode performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 96, '%', 4],[232.0, 1.3, 'A', 3]

K
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(26852, 26852)
 By fitting the hard-axis magnetoresistanceloops to an analytical model, the effective anisotropy fields in both free andreference layers were derived and their variations in temperature range between340K and 5K were determined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 50, 'to', 1],[68.0, 150, 'nm', 1],[3.0, 5, 'K', 0],[149.0, 0.1, 'and', 3],[150.0, 0.24, 'for', 3]

K2
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(26902, 26903)
 It is found that an accurate fitting is possibleonly if a second-order anisotropy term of the form -K2cos4theta, isadded to the fitting model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 50, 'to', 2],[118.0, 150, 'nm', 2],[47.0, 5, 'K', 1],[98.0, 0.1, 'and', 2],[99.0, 0.24, 'for', 2]

K1
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(26976, 26977)
 This higher order contribution exists both in thefree and reference layers and its sign is opposite to that of the first orderanisotropy constant, K1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 50, 'to', 3],[192.0, 150, 'nm', 3],[121.0, 5, 'K', 2],[24.0, 0.1, 'and', 1],[25.0, 0.24, 'for', 1]

At
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(26980, 26980)
 At room temperatures the estimated -K2/K1ratios are 0.1 and 0.24 for the free and reference layers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 50, 'to', 4],[196.0, 150, 'nm', 4],[125.0, 5, 'K', 3],[21.0, 0.1, 'and', 0],[22.0, 0.24, 'for', 0]

K2/K1
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(26991, 26995)
 At room temperatures the estimated -K2/K1ratios are 0.1 and 0.24 for the free and reference layers, respectively.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[208.0, 50, 'to', 4],[207.0, 150, 'nm', 4],[136.0, 5, 'K', 3],[6.0, 0.1, 'and', 0],[7.0, 0.24, 'for', 0]

FeCoB/MgO
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(27153, 27158)
 The existence of this higher order anisotropy was confirmedexperimentally on FeCoB/MgO sheet films by ferromagnetic resonance technique.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[370.0, 50, 'to', 8],[369.0, 150, 'nm', 8],[298.0, 5, 'K', 7],[152.0, 0.1, 'and', 4],[151.0, 0.24, 'for', 4]

FeCoB/MgO
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(27221, 27226)
It is of interfacial nature and is believed to be linked to spatialfluctuations at the nanoscale of the anisotropy parameter at the FeCoB/MgOinterface, in agreement with Dieny-Vedyayev model.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[438.0, 50, 'to', 9],[437.0, 150, 'nm', 9],[366.0, 5, 'K', 8],[220.0, 0.1, 'and', 5],[219.0, 0.24, 'for', 5]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(27259, 27261)
Spin filtering in CrI3 tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 100, '%', 4],[218.0, 3, ',', 4],[220.0, 0, '%', 4],[402.0, 2, 'D', 7]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(27317, 27319)
 Among these materials is CrI3 -a magnetic semiconductor exhibiting transitions between antiferromagnetic andferromagnetic orderings under the influence of an applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 100, '%', 2],[160.0, 3, ',', 2],[162.0, 0, '%', 2],[344.0, 2, 'D', 5]

Cu
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(27408, 27408)
 Here,using first-principles methods based on density functional theory, we explorespin-dependent transport in tunnel junctions formed of fcc Cu (111) electrodesand a CrI3 tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 100, '%', 1],[71.0, 3, ',', 1],[73.0, 0, '%', 1],[255.0, 2, 'D', 4]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(27421, 27423)
 Here,using first-principles methods based on density functional theory, we explorespin-dependent transport in tunnel junctions formed of fcc Cu (111) electrodesand a CrI3 tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 100, '%', 1],[56.0, 3, ',', 1],[58.0, 0, '%', 1],[240.0, 2, 'D', 4]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(27464, 27466)
 We find about 100% spin polarization of thetunneling current for a ferromagnetically-ordered four-monolayer CrI3 andtunneling magnetoresistance of about 3,000% associated with a change ofmagnetic ordering in CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 100, '%', 0],[13.0, 3, ',', 0],[15.0, 0, '%', 0],[197.0, 2, 'D', 3]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(27501, 27503)
 We find about 100% spin polarization of thetunneling current for a ferromagnetically-ordered four-monolayer CrI3 andtunneling magnetoresistance of about 3,000% associated with a change ofmagnetic ordering in CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 100, '%', 0],[22.0, 3, ',', 0],[20.0, 0, '%', 0],[160.0, 2, 'D', 3]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(27539, 27541)
 This behavior is understood in terms of the spinand wave-vector dependent evanescent states in CrI3 which control thetunneling conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 100, '%', 1],[60.0, 3, ',', 1],[58.0, 0, '%', 1],[122.0, 2, 'D', 2]

Cu
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(27569, 27569)
 We find a sizable charge transfer from Cu to CrI3which adds new features to the mechanism of spin-filtering in CrI3-basedtunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 100, '%', 2],[90.0, 3, ',', 2],[88.0, 0, '%', 2],[94.0, 2, 'D', 1]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(27573, 27575)
 We find a sizable charge transfer from Cu to CrI3which adds new features to the mechanism of spin-filtering in CrI3-basedtunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 100, '%', 2],[94.0, 3, ',', 2],[92.0, 0, '%', 2],[88.0, 2, 'D', 1]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(27600, 27602)
 We find a sizable charge transfer from Cu to CrI3which adds new features to the mechanism of spin-filtering in CrI3-basedtunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 100, '%', 2],[121.0, 3, ',', 2],[119.0, 0, '%', 2],[61.0, 2, 'D', 1]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(27631, 27633)
 Our results elucidate the mechanisms of spin filtering inCrI3 tunnel junctions and provide important insights for the design ofmagnetoresistive devices based on 2D magnetic crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 100, '%', 3],[152.0, 3, ',', 3],[150.0, 0, '%', 3],[30.0, 2, 'D', 0]

CoFe2O4
###Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel###
(27736, 27740)
 We report direct experimental evidence of room temperature spin filtering inmagnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers viatunneling magnetoresistance (TMR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, -18, '%', 2],[122.0, 2, 'K', 2],[126.0, -3, '%', 2],[131.0, 290, 'K', 2]

O4
###Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel###
(27771, 27772)
Pt(111)/CoFe2O4(111)/gamma-Al2O3(111)/Co(0001) fully epitaxial MTJs were grownin order to obtain a high quality system, capable of functioning at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, -18, '%', 1],[90.0, 2, 'K', 1],[94.0, -3, '%', 1],[99.0, 290, 'K', 1]

O3
###Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel###
(27781, 27782)
Pt(111)/CoFe2O4(111)/gamma-Al2O3(111)/Co(0001) fully epitaxial MTJs were grownin order to obtain a high quality system, capable of functioning at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, -18, '%', 1],[80.0, 2, 'K', 1],[84.0, -3, '%', 1],[89.0, 290, 'K', 1]

In
###Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel###
(27874, 27874)
 In addition, the TMR ratio follows aunique bias voltage dependence that has been theoretically predicted to be thesignature of spin filtering in MTJs containing magnetic barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, -18, '%', 1],[12.0, 2, 'K', 1],[8.0, -3, '%', 1],[3.0, 290, 'K', 1]

CoFe2O4
###Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel###
(27938, 27942)
 CoFe2O4tunnel barriers therefore provide a model system to investigate spin filteringin a wide range of temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, -18, '%', 2],[76.0, 2, 'K', 2],[72.0, -3, '%', 2],[67.0, 290, 'K', 2]

In
###Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions|G. D. Fuchs,N. C. Emley,I. N. Krivorotov,P. M. Braganca,E. M. Ryan,S. I. Kiselev,J. C. Sankey,J. A. Katine,D. C. Ralph,R. A. Buhrman###
(28105, 28105)
 In the tunnel junctions, spin-transfer-drivenswitching can occur at voltages that are high enough to quench the tunnelmagnetoresistance, demonstrating that the current remains spin-polarized atthese voltages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 5, 'Ohm', 2]

Fe/MgO
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28200, 28203)
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 400, '%', 0],[36.0, 417, '%', 1],[53.0, 914, '%', 1],[57.0, 3, 'K', 1],[196.0, 80, '%', 2],[314.0, 3, 'K', 4],[374.0, 496, '%', 5]

Fe/MgO
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28270, 28273)
 Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[87.0, 400, '%', 1],[31.0, 417, '%', 0],[14.0, 914, '%', 0],[10.0, 3, 'K', 0],[126.0, 80, '%', 1],[244.0, 3, 'K', 3],[304.0, 496, '%', 4]

Fe
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28327, 28327)
 Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 400, '%', 1],[88.0, 417, '%', 0],[71.0, 914, '%', 0],[67.0, 3, 'K', 0],[72.0, 80, '%', 1],[190.0, 3, 'K', 3],[250.0, 496, '%', 4]

MgO
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28343, 28344)
 Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 400, '%', 1],[104.0, 417, '%', 0],[87.0, 914, '%', 0],[83.0, 3, 'K', 0],[55.0, 80, '%', 1],[173.0, 3, 'K', 3],[233.0, 496, '%', 4]

MgO
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28377, 28378)
 Clear TMRoscillation as a function of the MgO thickness with a large peak-to-valleydifference of 80% was observed when the layers were grown on a highly(001)-oriented Cr buffer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 400, '%', 2],[138.0, 417, '%', 1],[121.0, 914, '%', 1],[117.0, 3, 'K', 1],[21.0, 80, '%', 0],[139.0, 3, 'K', 2],[199.0, 496, '%', 3]

Cr
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28429, 28429)
 Clear TMRoscillation as a function of the MgO thickness with a large peak-to-valleydifference of 80% was observed when the layers were grown on a highly(001)-oriented Cr buffer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 400, '%', 2],[190.0, 417, '%', 1],[173.0, 914, '%', 1],[169.0, 3, 'K', 1],[30.0, 80, '%', 0],[88.0, 3, 'K', 2],[148.0, 496, '%', 3]

I
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28461, 28461)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 400, '%', 3],[222.0, 417, '%', 2],[205.0, 914, '%', 2],[201.0, 3, 'K', 2],[62.0, 80, '%', 1],[56.0, 3, 'K', 1],[116.0, 496, '%', 2]

V
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28464, 28464)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 400, '%', 3],[225.0, 417, '%', 2],[208.0, 914, '%', 2],[204.0, 3, 'K', 2],[65.0, 80, '%', 1],[53.0, 3, 'K', 1],[113.0, 496, '%', 2]

I
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28493, 28493)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 400, '%', 3],[254.0, 417, '%', 2],[237.0, 914, '%', 2],[233.0, 3, 'K', 2],[94.0, 80, '%', 1],[24.0, 3, 'K', 1],[84.0, 496, '%', 2]

V
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28496, 28496)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 400, '%', 3],[257.0, 417, '%', 2],[240.0, 914, '%', 2],[236.0, 3, 'K', 2],[97.0, 80, '%', 1],[21.0, 3, 'K', 1],[81.0, 496, '%', 2]

V
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28506, 28506)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 400, '%', 3],[267.0, 417, '%', 2],[250.0, 914, '%', 2],[246.0, 3, 'K', 2],[107.0, 80, '%', 1],[11.0, 3, 'K', 1],[71.0, 496, '%', 2]

V
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28513, 28513)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 400, '%', 3],[274.0, 417, '%', 2],[257.0, 914, '%', 2],[253.0, 3, 'K', 2],[114.0, 80, '%', 1],[4.0, 3, 'K', 1],[64.0, 496, '%', 2]

At
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28516, 28516)
 At 3K, fine structures with two dips emerge in the plateau-liked<missing VAR>I/d<missing VAR>V, reflecting highly coherent tunneling through the Fe/MgO/Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 400, '%', 4],[277.0, 417, '%', 3],[260.0, 914, '%', 3],[256.0, 3, 'K', 3],[117.0, 80, '%', 2],[1.0, 3, 'K', 0],[61.0, 496, '%', 1]

I
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28542, 28542)
 At 3K, fine structures with two dips emerge in the plateau-liked<missing VAR>I/d<missing VAR>V, reflecting highly coherent tunneling through the Fe/MgO/Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 400, '%', 4],[303.0, 417, '%', 3],[286.0, 914, '%', 3],[282.0, 3, 'K', 3],[143.0, 80, '%', 2],[25.0, 3, 'K', 0],[35.0, 496, '%', 1]

V
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28545, 28545)
 At 3K, fine structures with two dips emerge in the plateau-liked<missing VAR>I/d<missing VAR>V, reflecting highly coherent tunneling through the Fe/MgO/Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 400, '%', 4],[306.0, 417, '%', 3],[289.0, 914, '%', 3],[285.0, 3, 'K', 3],[146.0, 80, '%', 2],[28.0, 3, 'K', 0],[32.0, 496, '%', 1]

Fe/MgO/Fe
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28560, 28565)
 At 3K, fine structures with two dips emerge in the plateau-liked<missing VAR>I/d<missing VAR>V, reflecting highly coherent tunneling through the Fe/MgO/Fe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[377.0, 400, '%', 4],[321.0, 417, '%', 3],[304.0, 914, '%', 3],[300.0, 3, 'K', 3],[161.0, 80, '%', 2],[43.0, 3, 'K', 0],[12.0, 496, '%', 1]

CoFe
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28601, 28602)
 We alsoobserved a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at thebottom-Fe/MgO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[418.0, 400, '%', 5],[362.0, 417, '%', 4],[345.0, 914, '%', 4],[341.0, 3, 'K', 4],[202.0, 80, '%', 3],[84.0, 3, 'K', 1],[24.0, 496, '%', 0]

Fe/MgO
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(28613, 28616)
 We alsoobserved a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at thebottom-Fe/MgO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[430.0, 400, '%', 5],[374.0, 417, '%', 4],[357.0, 914, '%', 4],[353.0, 3, 'K', 4],[214.0, 80, '%', 3],[96.0, 3, 'K', 1],[36.0, 496, '%', 0]

Co1-xMn
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(28645, 28649)
High tunnel magnetoresistance and magnetism in metastable bcc Co1-xMnx<missing VAR>-based magnetic tunnel junctions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[124.0, 200, '%', 3],[128.0, 600, '%', 3],[133.0, 300, 'K', 3],[162.0, 0.25, 'bcc', 3],[186.0, 13, ',', 6],[311.0, 0.5, 'with', 8],[442.0, 0.37, ',', 11],[457.0, 620, '%', 11],[461.0, 229, '%', 11],[467.0, 450, '%', 11],[471.0, 194, '%', 11],[476.0, 10, 'K', 11]

Co
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(28661, 28661)
 Co-rich Co1-xMnx<missing VAR> alloys have hcp or fcc disordered phases and thoseferromagnetic orderings are significantly deteriorated with increasing Mnconcentration x<missing VAR> in bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 200, '%', 2],[116.0, 600, '%', 2],[121.0, 300, 'K', 2],[150.0, 0.25, 'bcc', 2],[174.0, 13, ',', 5],[299.0, 0.5, 'with', 7],[430.0, 0.37, ',', 10],[445.0, 620, '%', 10],[449.0, 229, '%', 10],[455.0, 450, '%', 10],[459.0, 194, '%', 10],[464.0, 10, 'K', 10]

Co1-xMn
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(28665, 28669)
 Co-rich Co1-xMnx<missing VAR> alloys have hcp or fcc disordered phases and thoseferromagnetic orderings are significantly deteriorated with increasing Mnconcentration x<missing VAR> in bulk.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[104.0, 200, '%', 2],[108.0, 600, '%', 2],[113.0, 300, 'K', 2],[142.0, 0.25, 'bcc', 2],[166.0, 13, ',', 5],[291.0, 0.5, 'with', 7],[422.0, 0.37, ',', 10],[437.0, 620, '%', 10],[441.0, 229, '%', 10],[447.0, 450, '%', 10],[451.0, 194, '%', 10],[456.0, 10, 'K', 10]

Mn
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(28705, 28705)
 Co-rich Co1-xMnx<missing VAR> alloys have hcp or fcc disordered phases and thoseferromagnetic orderings are significantly deteriorated with increasing Mnconcentration x<missing VAR> in bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 200, '%', 2],[72.0, 600, '%', 2],[77.0, 300, 'K', 2],[106.0, 0.25, 'bcc', 2],[130.0, 13, ',', 5],[255.0, 0.5, 'with', 7],[386.0, 0.37, ',', 10],[401.0, 620, '%', 10],[405.0, 229, '%', 10],[411.0, 450, '%', 10],[415.0, 194, '%', 10],[420.0, 10, 'K', 10]

K
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(28787, 28787)
, high tunnel magnetoresistance (TMR)ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions(MTJs) with the x<missing VAR>  0.25 bcc alloy electrodes [Kunimatsu et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 200, '%', 0],[10.0, 600, '%', 0],[5.0, 300, 'K', 0],[24.0, 0.25, 'bcc', 0],[48.0, 13, ',', 3],[173.0, 0.5, 'with', 5],[304.0, 0.37, ',', 8],[319.0, 620, '%', 8],[323.0, 229, '%', 8],[329.0, 450, '%', 8],[333.0, 194, '%', 8],[338.0, 10, 'K', 8]

Co1-xMn
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(28925, 28929)
 The singlephase bcc Co1-xMnx<missing VAR>(001) films were pseudomorphically grown on Cr(001)for 0.14 < x<missing VAR> < 0.50 with a sputtering technique.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[152.0, 200, '%', 5],[148.0, 600, '%', 5],[143.0, 300, 'K', 5],[114.0, 0.25, 'bcc', 5],[90.0, 13, ',', 2],[31.0, 0.5, 'with', 0],[162.0, 0.37, ',', 3],[177.0, 620, '%', 3],[181.0, 229, '%', 3],[187.0, 450, '%', 3],[191.0, 194, '%', 3],[196.0, 10, 'K', 3]

Co
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(28986, 28986)
 The magnetization was largerthan that of pure Co for x<missing VAR>  0.14-0.25 and deceased with further increasingx<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 200, '%', 6],[209.0, 600, '%', 6],[204.0, 300, 'K', 6],[175.0, 0.25, 'bcc', 6],[151.0, 13, ',', 3],[26.0, 0.5, 'with', 1],[105.0, 0.37, ',', 2],[120.0, 620, '%', 2],[124.0, 229, '%', 2],[130.0, 450, '%', 2],[134.0, 194, '%', 2],[139.0, 10, 'K', 2]

Mn
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(29036, 29036)
 This behavior mainly stemmed from the composition dependence of magneticmoment of Mn that exceeded 2 mu B at the maximum, unveiled by X<missing VAR>-raymagnetic circular dichroism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 200, '%', 7],[259.0, 600, '%', 7],[254.0, 300, 'K', 7],[225.0, 0.25, 'bcc', 7],[201.0, 13, ',', 4],[76.0, 0.5, 'with', 2],[55.0, 0.37, ',', 1],[70.0, 620, '%', 1],[74.0, 229, '%', 1],[80.0, 450, '%', 1],[84.0, 194, '%', 1],[89.0, 10, 'K', 1]

B
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(29046, 29046)
 This behavior mainly stemmed from the composition dependence of magneticmoment of Mn that exceeded 2 mu B at the maximum, unveiled by X<missing VAR>-raymagnetic circular dichroism.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 200, '%', 7],[269.0, 600, '%', 7],[264.0, 300, 'K', 7],[235.0, 0.25, 'bcc', 7],[211.0, 13, ',', 4],[86.0, 0.5, 'with', 2],[45.0, 0.37, ',', 1],[60.0, 620, '%', 1],[64.0, 229, '%', 1],[70.0, 450, '%', 1],[74.0, 194, '%', 1],[79.0, 10, 'K', 1]

K
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(29130, 29130)
 Correspondingly, within the range of 0.25 < x<missing VAR> <0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K)as x<missing VAR> increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 200, '%', 8],[353.0, 600, '%', 8],[348.0, 300, 'K', 8],[319.0, 0.25, 'bcc', 8],[295.0, 13, ',', 5],[170.0, 0.5, 'with', 3],[39.0, 0.37, ',', 0],[24.0, 620, '%', 0],[20.0, 229, '%', 0],[14.0, 450, '%', 0],[10.0, 194, '%', 0],[5.0, 10, 'K', 0]

K
###High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne###
(29259, 29259)
 Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) andshot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100)magnetic tunnel junctions, as a function of the magnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2.7, 'V', 0],[31.0, 1, 'V', 0],[99.0, 185, '%', 1],[103.0, 300, 'K', 1],[107.0, 330, '%', 1],[111.0, 4, 'K', 1]

Fe
###High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne###
(29306, 29306)
 Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) andshot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100)magnetic tunnel junctions, as a function of the magnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 2.7, 'V', 0],[16.0, 1, 'V', 0],[52.0, 185, '%', 1],[56.0, 300, 'K', 1],[60.0, 330, '%', 1],[64.0, 4, 'K', 1]

Fe
###High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne###
(29418, 29418)
 Multiplesign inversion of the magnetoresistance is observed for bias polarity when theelectrons scan the electronic structure of the bottom Fe-C interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2.7, 'V', 2],[128.0, 1, 'V', 2],[60.0, 185, '%', 1],[56.0, 300, 'K', 1],[52.0, 330, '%', 1],[48.0, 4, 'K', 1]

C
###High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne###
(29420, 29420)
 Multiplesign inversion of the magnetoresistance is observed for bias polarity when theelectrons scan the electronic structure of the bottom Fe-C interface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 2.7, 'V', 2],[130.0, 1, 'V', 2],[62.0, 185, '%', 1],[58.0, 300, 'K', 1],[54.0, 330, '%', 1],[50.0, 4, 'K', 1]

MgO
###High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne###
(29477, 29478)
 This demonstrates a pure spindependent direct tunneling mechanism and validates the high structural qualityof the MgO barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 2.7, 'V', 4],[187.0, 1, 'V', 4],[119.0, 185, '%', 3],[115.0, 300, 'K', 3],[111.0, 330, '%', 3],[107.0, 4, 'K', 3]

CoFeB/MgO
###Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions|K. Watanabe,B. Jinnai,S. Fukami,H. Sato,H. Ohno###
(29613, 29618)
 Perpendicular-easy-axis CoFeB/MgO stacks possessinginterfacial anisotropy have paved the way down to 20-nm scale, below which anew approach needs to be explored.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[151.0, 10, 'nm', 2]

MgO
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(29886, 29887)
Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1, ',', 1],[64.0, 2.0, 'However', 1]

MgO
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(29917, 29918)
 Recently, it has been shown that magnetic tunnel junctions with thin MgOtunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR)values at room temperature1, 2. However, the physics of spin dependenttunneling through MgO barriers is only beginning to be unravelled.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1, ',', 0],[33.0, 2.0, 'However', 0]

MgO
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(29969, 29970)
 Recently, it has been shown that magnetic tunnel junctions with thin MgOtunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR)values at room temperature1, 2. However, the physics of spin dependenttunneling through MgO barriers is only beginning to be unravelled.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1, ',', 0],[18.0, 2.0, 'However', 0]

MgO
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(30029, 30030)
 Using planarmagnetic tunnel junctions in which ultra-thin layers of magnetic metals aredeposited in the middle of a MgO tunnel barrier here we demonstrate that theTMR is strongly modified when these layers are discontinuous and composed ofsmall pancake shaped nanodots.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 1, ',', 1],[78.0, 2.0, 'However', 1]

At
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(30083, 30083)
 At low temperatures, in the Coulomb blockaderegime, for layers less than 1 nm thick, the conductance of the junction isincreased at low bias consistent with Kondo assisted tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 1, ',', 2],[132.0, 2.0, 'However', 2]

In
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(30149, 30149)
 In the sameregime we observe a suppression of the TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 1, ',', 3],[198.0, 2.0, 'However', 3]

Al2O3
###Tunneling Magneto-Thermopower in Magnetic Tunnel Junctions|Carlos López-Monís,Alex Matos-Abiague,Jaroslav Fabian###
(30375, 30378)
 The analytical modelis tested numerically for the special case of an Al2O3-based MTJ, forwhich we analyze the dependence of the thermopower and TMT on the relativemagnetization orientations, as well as on the barrier height and thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Tunneling Magneto-Thermopower in Magnetic Tunnel Junctions|Carlos López-Monís,Alex Matos-Abiague,Jaroslav Fabian###
(30487, 30487)
 As its electrical prototype, this thermal spintransport model should serve as a phenomenological benchmark for analyzingexperimental and first-principles calculations of thermopower in magnetictunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-filter magnetoresistance in magnetic barrier junctions|Alireza Saffarzadeh###
(30684, 30684)
 The tunnel current and magnetoresistance (TMR) are investigated in magnetictunnel junctions consisting of a spin-filter tunnel barrier, sandwiched betweena ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-filter magnetoresistance in magnetic barrier junctions|Alireza Saffarzadeh###
(30697, 30697)
 The tunnel current and magnetoresistance (TMR) are investigated in magnetictunnel junctions consisting of a spin-filter tunnel barrier, sandwiched betweena ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-filter magnetoresistance in magnetic barrier junctions|Alireza Saffarzadeh###
(30768, 30768)
 The numerical results show that the spin transport depends onthe relative magnetization orientation of the FM<missing VAR> electrode and the spin-filterbarrier, such that the tunnel current reaches its maximum when the magneticmoments of the FM<missing VAR> electrode and the magnetic barrier are parallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-filter magnetoresistance in magnetic barrier junctions|Alireza Saffarzadeh###
(30814, 30814)
 The numerical results show that the spin transport depends onthe relative magnetization orientation of the FM<missing VAR> electrode and the spin-filterbarrier, such that the tunnel current reaches its maximum when the magneticmoments of the FM<missing VAR> electrode and the magnetic barrier are parallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(30886, 30892)
A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[131.0, 160, '%', 2],[167.0, 1600, '%', 2],[199.0, 1, 'symmetry', 3],[462.0, 1, 'evanescent', 5],[486.0, 0, ',', 5]

Fe/MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(30922, 30928)
 We investigated the spin-dependent transport properties of Fe/MgAl2O4/Fe(001)magnetic tunneling junctions (MTJs) on the basis of first-principlescalculations of the electronic structures and the ballistic conductance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[95.0, 160, '%', 1],[131.0, 1600, '%', 1],[163.0, 1, 'symmetry', 2],[426.0, 1, 'evanescent', 4],[450.0, 0, ',', 4]

Fe/MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(31001, 31007)
 Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 160, '%', 0],[52.0, 1600, '%', 0],[84.0, 1, 'symmetry', 1],[347.0, 1, 'evanescent', 3],[371.0, 0, ',', 3]

Fe/MgO
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(31043, 31046)
 Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 160, '%', 0],[13.0, 1600, '%', 0],[45.0, 1, 'symmetry', 1],[308.0, 1, 'evanescent', 3],[332.0, 0, ',', 3]

MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(31116, 31120)
 However, there was an evanescent statewith delta 1 symmetry in the energy gap around the Fermi level of normal spinelMgAl2O4, indicating the possibility of a large TMR in Fe/MgAl2O4/Fe(001) MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 160, '%', 1],[57.0, 1600, '%', 1],[25.0, 1, 'symmetry', 0],[234.0, 1, 'evanescent', 2],[258.0, 0, ',', 2]

Fe/MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(31141, 31147)
 However, there was an evanescent statewith delta 1 symmetry in the energy gap around the Fermi level of normal spinelMgAl2O4, indicating the possibility of a large TMR in Fe/MgAl2O4/Fe(001) MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[118.0, 160, '%', 1],[82.0, 1600, '%', 1],[50.0, 1, 'symmetry', 0],[207.0, 1, 'evanescent', 2],[231.0, 0, ',', 2]

Fe/MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(31174, 31180)
The small TMR ratio of the Fe/MgAl2O4/Fe(001) MTJ was due to new conductivechannels in the minority spin states resulting from a band-folding effect inthe two-dimensional (2-D) Brillouin zone of the in-plane wave vector (k<missing VAR>//) ofthe Fe electrode.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[151.0, 160, '%', 2],[115.0, 1600, '%', 2],[83.0, 1, 'symmetry', 1],[174.0, 1, 'evanescent', 1],[198.0, 0, ',', 1]

Fe
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(31268, 31268)
The small TMR ratio of the Fe/MgAl2O4/Fe(001) MTJ was due to new conductivechannels in the minority spin states resulting from a band-folding effect inthe two-dimensional (2-D) Brillouin zone of the in-plane wave vector (k<missing VAR>//) ofthe Fe electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 160, '%', 2],[209.0, 1600, '%', 2],[177.0, 1, 'symmetry', 1],[86.0, 1, 'evanescent', 1],[110.0, 0, ',', 1]

MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(31287, 31291)
 Since the in-plane cell size of MgAl2O4 is twice that of theprimitive in-plane cell size of bcc Fe, the bands in the boundary edges arefolded, and minority-spin states coupled with the delta 1 evanescent state inthe MgAl2O4 barrier appear at k<missing VAR>//0, which reduces the TMR ratio of the MTJssignificantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 160, '%', 3],[228.0, 1600, '%', 3],[196.0, 1, 'symmetry', 2],[63.0, 1, 'evanescent', 0],[87.0, 0, ',', 0]

Fe
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(31318, 31318)
 Since the in-plane cell size of MgAl2O4 is twice that of theprimitive in-plane cell size of bcc Fe, the bands in the boundary edges arefolded, and minority-spin states coupled with the delta 1 evanescent state inthe MgAl2O4 barrier appear at k<missing VAR>//0, which reduces the TMR ratio of the MTJssignificantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 160, '%', 3],[259.0, 1600, '%', 3],[227.0, 1, 'symmetry', 2],[36.0, 1, 'evanescent', 0],[60.0, 0, ',', 0]

MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(31363, 31367)
 Since the in-plane cell size of MgAl2O4 is twice that of theprimitive in-plane cell size of bcc Fe, the bands in the boundary edges arefolded, and minority-spin states coupled with the delta 1 evanescent state inthe MgAl2O4 barrier appear at k<missing VAR>//0, which reduces the TMR ratio of the MTJssignificantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 160, '%', 3],[304.0, 1600, '%', 3],[272.0, 1, 'symmetry', 2],[9.0, 1, 'evanescent', 0],[11.0, 0, ',', 0]

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31437, 31441)
Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe3GaTe2 with highly spin-polarized Fermi surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31467, 31467)
 Recently, van der Waals (vdW) magnetic heterostructures have receivedincreasing research attention in spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31511, 31511)
 However, the lack ofroom-temperature magnetic order of vdW material has largely impedes itsdevelopment in practical spintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31547, 31547)
 Inspired by the recentlydiscovered vdW ferromagnet Fe3GaTe2, which has been shown to have magneticorder above room temperature and sizable perpendicular magnetic anisotropy, weinvestigate the basic electronic structure and magnetic properties of Fe3GaTe2as well as tunneling magnetoresistance effect in magnetic tunnel junctions(MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31551, 31555)
 Inspired by the recentlydiscovered vdW ferromagnet Fe3GaTe2, which has been shown to have magneticorder above room temperature and sizable perpendicular magnetic anisotropy, weinvestigate the basic electronic structure and magnetic properties of Fe3GaTe2as well as tunneling magnetoresistance effect in magnetic tunnel junctions(MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31613, 31617)
 Inspired by the recentlydiscovered vdW ferromagnet Fe3GaTe2, which has been shown to have magneticorder above room temperature and sizable perpendicular magnetic anisotropy, weinvestigate the basic electronic structure and magnetic properties of Fe3GaTe2as well as tunneling magnetoresistance effect in magnetic tunnel junctions(MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31653, 31657)
 Inspired by the recentlydiscovered vdW ferromagnet Fe3GaTe2, which has been shown to have magneticorder above room temperature and sizable perpendicular magnetic anisotropy, weinvestigate the basic electronic structure and magnetic properties of Fe3GaTe2as well as tunneling magnetoresistance effect in magnetic tunnel junctions(MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31661, 31665)
 Inspired by the recentlydiscovered vdW ferromagnet Fe3GaTe2, which has been shown to have magneticorder above room temperature and sizable perpendicular magnetic anisotropy, weinvestigate the basic electronic structure and magnetic properties of Fe3GaTe2as well as tunneling magnetoresistance effect in magnetic tunnel junctions(MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31687, 31691)
 It is found that Fe3GaTe2 with highly spin-polarized Fermisurface ensures that such magnetic tunnel junctions may have prominenttunneling magnetoresistance effect at room temperature even comparable toexisting conventional AlOx and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31748, 31748)
 It is found that Fe3GaTe2 with highly spin-polarized Fermisurface ensures that such magnetic tunnel junctions may have prominenttunneling magnetoresistance effect at room temperature even comparable toexisting conventional AlOx and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31753, 31754)
 It is found that Fe3GaTe2 with highly spin-polarized Fermisurface ensures that such magnetic tunnel junctions may have prominenttunneling magnetoresistance effect at room temperature even comparable toexisting conventional AlOx and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31772, 31776)
 Our results suggest thatFe3GaTe2-based MTJs may be the promising candidate for realizing long-waitingfull magnetic vdW spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(31808, 31808)
 Our results suggest thatFe3GaTe2-based MTJs may be the promising candidate for realizing long-waitingfull magnetic vdW spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31831, 31833)
Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, -500, ',', 4]

In
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31883, 31883)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, -500, ',', 2]

Ta/Pd/IrMn/Co
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31903, 31910)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[75.0, -500, ',', 2]

Fe/Ta/Co
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31912, 31916)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[69.0, -500, ',', 2]

Fe
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31918, 31918)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, -500, ',', 2]

B/MgO/Co
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31920, 31925)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, -500, ',', 2]

Fe
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31927, 31927)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, -500, ',', 2]

B
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31929, 31929)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, -500, ',', 2]

Pd
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31933, 31933)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, -500, ',', 2]

Hf
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31961, 31961)
, Hf or Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, -500, ',', 1]

Ta
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31965, 31965)
, Hf or Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, -500, ',', 1]

In
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(31968, 31968)
 In these stacks perpendicularexchange bias fields of -500,Oe along with perpendicular magnetic anisotropyare combined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, -500, ',', 0]

Hf
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(32026, 32026)
 A tunnel magnetoresistance of (47.2pm 1.4)% for the Hf-cappedsample was determined compared to the Ta one (42.6pm 0.7)% at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, -500, ',', 1]

Ta
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(32043, 32043)
 A tunnel magnetoresistance of (47.2pm 1.4)% for the Hf-cappedsample was determined compared to the Ta one (42.6pm 0.7)% at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, -500, ',', 1]

Hf
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(32087, 32087)
 Interestingly, this observation is correlated to the higher boronabsorption of Hf compared to Ta which prevents the suppression ofDeltatextrm1 channel and leads to higher tunnel magnetoresistancevalues.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, -500, ',', 2]

Ta
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(32093, 32093)
 Interestingly, this observation is correlated to the higher boronabsorption of Hf compared to Ta which prevents the suppression ofDeltatextrm1 channel and leads to higher tunnel magnetoresistancevalues.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, -500, ',', 2]

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32334, 32334)
 Here we proposean electric-field controlled antiferromagnetic (AFM) tunnel junction withstructure of piezoelectric substrate/Mn3Pt/SrTiO3/Pt operating by the magneticphase transition (MPT) of antiferromagnet Mn3Pt through its magneto-volumeeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Pt/SrTiO3/Pt
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32353, 32362)
 Here we proposean electric-field controlled antiferromagnetic (AFM) tunnel junction withstructure of piezoelectric substrate/Mn3Pt/SrTiO3/Pt operating by the magneticphase transition (MPT) of antiferromagnet Mn3Pt through its magneto-volumeeffect.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Mn3Pt
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32387, 32389)
 Here we proposean electric-field controlled antiferromagnetic (AFM) tunnel junction withstructure of piezoelectric substrate/Mn3Pt/SrTiO3/Pt operating by the magneticphase transition (MPT) of antiferromagnet Mn3Pt through its magneto-volumeeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32416, 32416)
 The transport properties of the proposed AFM<missing VAR> tunnel junction have beeninvestigated by employing first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Pt
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32468, 32470)
 Our results show thata magnetoresistance over hundreds of percent is achievable when Mn3Pt undergoesMPT from a collinear AFM<missing VAR> state to a non-collinear AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32486, 32486)
 Our results show thata magnetoresistance over hundreds of percent is achievable when Mn3Pt undergoesMPT from a collinear AFM<missing VAR> state to a non-collinear AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32500, 32500)
 Our results show thata magnetoresistance over hundreds of percent is achievable when Mn3Pt undergoesMPT from a collinear AFM<missing VAR> state to a non-collinear AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Pt
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32563, 32565)
 Band structureanalysis based on density functional calculations shows that the large TMR canbe attributed to the joint effect of significant different Fermi surface ofMn3Pt at two AFM<missing VAR> phases and the band symmetry filtering effect of the SrTiO3tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32572, 32572)
 Band structureanalysis based on density functional calculations shows that the large TMR canbe attributed to the joint effect of significant different Fermi surface ofMn3Pt at two AFM<missing VAR> phases and the band symmetry filtering effect of the SrTiO3tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32593, 32596)
 Band structureanalysis based on density functional calculations shows that the large TMR canbe attributed to the joint effect of significant different Fermi surface ofMn3Pt at two AFM<missing VAR> phases and the band symmetry filtering effect of the SrTiO3tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32604, 32604)
 In addition, other than single-crystalline tunnel barrier, wealso discuss the robustness of the proposed magnetoresistance effect byconsidering amorphous AlOx barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32650, 32650)
 In addition, other than single-crystalline tunnel barrier, wealso discuss the robustness of the proposed magnetoresistance effect byconsidering amorphous AlOx barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(32686, 32686)
 Our results may open perspective way foreffectively electrical writing and reading of the AFM<missing VAR> state and its applicationin energy efficient magnetic memory devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe/MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(32729, 32733)
Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[123.0, 631, '%', 2],[217.0, 1143, '%', 3],[433.0, 0.32, 'nm', 6],[504.0, 140, '%', 7]

In
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(32832, 32832)
 In this study, we demonstrated TMR ratios ofup to 631% at room temperature (RT), which is two or more times larger thanthose used currently for magnetoresistive random access memory (MRAM) devices,using CoFe/MgO/CoFe(001) epitaxial MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 631, '%', 0],[118.0, 1143, '%', 1],[334.0, 0.32, 'nm', 4],[405.0, 140, '%', 5]

CoFe/MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(32917, 32921)
 In this study, we demonstrated TMR ratios ofup to 631% at room temperature (RT), which is two or more times larger thanthose used currently for magnetoresistive random access memory (MRAM) devices,using CoFe/MgO/CoFe(001) epitaxial MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[61.0, 631, '%', 0],[29.0, 1143, '%', 1],[245.0, 0.32, 'nm', 4],[316.0, 140, '%', 5]

K
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(32958, 32958)
 The TMR ratio increased up to 1143% at10 K, which corresponds to an effective tunneling spin polarization of 0.923.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 631, '%', 1],[8.0, 1143, '%', 0],[208.0, 0.32, 'nm', 3],[279.0, 140, '%', 4]

MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(33033, 33034)
The observed large TMR ratios resulted from the fine-tuning of atomic-scalestructures of the MTJs, such as crystallographic orientations and MgO interfaceoxidation, in which the well-known Delta1 coherent tunneling mechanism for thegiant TMR effect is expected to be pronounced.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 631, '%', 2],[83.0, 1143, '%', 1],[132.0, 0.32, 'nm', 2],[203.0, 140, '%', 3]

MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(33141, 33142)
, (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMRoscillation with a 0.32 nm period in MgO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 631, '%', 4],[191.0, 1143, '%', 3],[24.0, 0.32, 'nm', 0],[95.0, 140, '%', 1]

MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(33172, 33173)
, (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMRoscillation with a 0.32 nm period in MgO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 631, '%', 4],[222.0, 1143, '%', 3],[6.0, 0.32, 'nm', 0],[64.0, 140, '%', 1]

MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(33208, 33209)
 Particularly, the TMRoscillatory behavior dominates the transport in a wide range of MgOthicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140%at RT, attributable to the appearance of large oscillatory components inresistance area product (R<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 631, '%', 5],[258.0, 1143, '%', 4],[42.0, 0.32, 'nm', 1],[28.0, 140, '%', 0]

V
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(33321, 33321)
 Further, we found that the oscillatory behaviorsof the TMR ratio and R<missing VAR>A survive, even under a -1 V bias voltage application,indicating the robustness of the oscillation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[465.0, 631, '%', 6],[371.0, 1143, '%', 5],[155.0, 0.32, 'nm', 2],[84.0, 140, '%', 1]

MgAl2O4
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33482, 33486)
Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[409.0, 1, ',', 5]

O
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33517, 33517)
 Through Bayesian optimization and the least absolute shrinkage and selectionoperator (L<missing VAR>ASSO) technique combined with first-principles calculations, weinvestigated the tunnel magnetoresistance (TMR) effect ofFe/disordered-MgAl2O4(M<missing VAR>AO)/Fe(001) magnetic tunnel junctions (MTJs) todetermine structures of disordered-M<missing VAR>AO that give large TMR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 1, ',', 4]

Fe
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33555, 33555)
 Through Bayesian optimization and the least absolute shrinkage and selectionoperator (L<missing VAR>ASSO) technique combined with first-principles calculations, weinvestigated the tunnel magnetoresistance (TMR) effect ofFe/disordered-MgAl2O4(M<missing VAR>AO)/Fe(001) magnetic tunnel junctions (MTJs) todetermine structures of disordered-M<missing VAR>AO that give large TMR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 1, ',', 4]

O4
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33562, 33563)
 Through Bayesian optimization and the least absolute shrinkage and selectionoperator (L<missing VAR>ASSO) technique combined with first-principles calculations, weinvestigated the tunnel magnetoresistance (TMR) effect ofFe/disordered-MgAl2O4(M<missing VAR>AO)/Fe(001) magnetic tunnel junctions (MTJs) todetermine structures of disordered-M<missing VAR>AO that give large TMR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 1, ',', 4]

O
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33567, 33567)
 Through Bayesian optimization and the least absolute shrinkage and selectionoperator (L<missing VAR>ASSO) technique combined with first-principles calculations, weinvestigated the tunnel magnetoresistance (TMR) effect ofFe/disordered-MgAl2O4(M<missing VAR>AO)/Fe(001) magnetic tunnel junctions (MTJs) todetermine structures of disordered-M<missing VAR>AO that give large TMR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 1, ',', 4]

O
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33600, 33600)
 Through Bayesian optimization and the least absolute shrinkage and selectionoperator (L<missing VAR>ASSO) technique combined with first-principles calculations, weinvestigated the tunnel magnetoresistance (TMR) effect ofFe/disordered-MgAl2O4(M<missing VAR>AO)/Fe(001) magnetic tunnel junctions (MTJs) todetermine structures of disordered-M<missing VAR>AO that give large TMR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 1, ',', 4]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33701, 33701)
 Characterization of the obtained structures suggestedthat the in-plane distance between two Al atoms plays an important role indetermining the TMR ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 1, ',', 2]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33731, 33731)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 1, ',', 1]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33733, 33733)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1, ',', 1]

O
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33743, 33743)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1, ',', 1]

Fe
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33785, 33785)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 1, ',', 1]

O/Fe
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33791, 33793)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[102.0, 1, ',', 1]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33810, 33810)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 1, ',', 1]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33812, 33812)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1, ',', 1]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33871, 33871)
 Furthermore, we found that the TMR ratio tended to be large when theratio of the number of Al, Mg, and vacancies in the [001] plane was 211,indicating that the control of Al atomic positions is essential to enhancingthe TMR ratio in MTJs with disordered M<missing VAR>AO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1, ',', 0]

Mg
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33874, 33874)
 Furthermore, we found that the TMR ratio tended to be large when theratio of the number of Al, Mg, and vacancies in the [001] plane was 211,indicating that the control of Al atomic positions is essential to enhancingthe TMR ratio in MTJs with disordered M<missing VAR>AO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1, ',', 0]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33909, 33909)
 Furthermore, we found that the TMR ratio tended to be large when theratio of the number of Al, Mg, and vacancies in the [001] plane was 211,indicating that the control of Al atomic positions is essential to enhancingthe TMR ratio in MTJs with disordered M<missing VAR>AO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, ',', 0]

O
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(33944, 33944)
 Furthermore, we found that the TMR ratio tended to be large when theratio of the number of Al, Mg, and vacancies in the [001] plane was 211,indicating that the control of Al atomic positions is essential to enhancingthe TMR ratio in MTJs with disordered M<missing VAR>AO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1, ',', 0]

CuInSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(34031, 34034)
Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe2 and CuGaSe2 including a detailed analysis of band-resolved transmittances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(34038, 34041)
Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe2 and CuGaSe2 including a detailed analysis of band-resolved transmittances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/CuInSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(34094, 34099)
 We study spin-dependent transport properties in magnetic tunneling junctions(MTJs) with semiconductor barriers, Fe/CuInSe2/Fe(001) andFe/CuGaSe2/Fe(001).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/CuGaSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(34109, 34114)
 We study spin-dependent transport properties in magnetic tunneling junctions(MTJs) with semiconductor barriers, Fe/CuInSe2/Fe(001) andFe/CuGaSe2/Fe(001).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

V
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(34284, 34284)
 We carry out a detailedanalysis of the band-resolved transmittances in both the MTJs and find anabsence of the selective transmission of Delta1 wave functions in someenergy regions a few e<missing VAR>V away from the Fermi level due to small band gaps inCuInSe2 and CuGaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuInSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(34309, 34312)
 We carry out a detailedanalysis of the band-resolved transmittances in both the MTJs and find anabsence of the selective transmission of Delta1 wave functions in someenergy regions a few e<missing VAR>V away from the Fermi level due to small band gaps inCuInSe2 and CuGaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(34316, 34319)
 We carry out a detailedanalysis of the band-resolved transmittances in both the MTJs and find anabsence of the selective transmission of Delta1 wave functions in someenergy regions a few e<missing VAR>V away from the Fermi level due to small band gaps inCuInSe2 and CuGaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IV
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34346, 34347)
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 0.3, '%', 8]

Ge1-x
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34353, 34356)
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[352.0, 0.3, '%', 8]

MgO
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34360, 34361)
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 0.3, '%', 8]

Fe
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34366, 34366)
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 0.3, '%', 8]

IV
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34371, 34372)
 Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the mostpromising materials for efficient spin injectors and detectors for Si and Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 0.3, '%', 7]

Ge1-x
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34380, 34383)
 Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the mostpromising materials for efficient spin injectors and detectors for Si and Ge.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[325.0, 0.3, '%', 7]

(GeFe)
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34386, 34389)
 Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the mostpromising materials for efficient spin injectors and detectors for Si and Ge.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 0.3, '%', 7]

Si
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34420, 34420)
 Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the mostpromising materials for efficient spin injectors and detectors for Si and Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 0.3, '%', 7]

Ge
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34424, 34424)
 Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the mostpromising materials for efficient spin injectors and detectors for Si and Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 0.3, '%', 7]

GeFe
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34491, 34492)
 9) suggested thatthe Fermi level is located in two overlapping largely spin-polarized bandsformed in the bandgap of GeFe; spin-down d(e) band and spin-up p-d(t<missing VAR>2) band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 0.3, '%', 4]

In
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34557, 34557)
 In this study, we show the first successful observation of thetunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs)containing a group-IV ferromagnetic semiconductor, that is, in MTJs composed ofepitaxially grown Fe/MgO/Ge0.935Fe0.065.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.3, '%', 2]

IV
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34612, 34613)
 In this study, we show the first successful observation of thetunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs)containing a group-IV ferromagnetic semiconductor, that is, in MTJs composed ofepitaxially grown Fe/MgO/Ge0.935Fe0.065.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.3, '%', 2]

Fe/MgO/Ge0.935Fe0.065
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34640, 34648)
 In this study, we show the first successful observation of thetunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs)containing a group-IV ferromagnetic semiconductor, that is, in MTJs composed ofepitaxially grown Fe/MgO/Ge0.935Fe0.065.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 0.3, '%', 2]

GeFe
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34671, 34672)
 We find that the p-d(t<missing VAR>2) band in GeFeis mainly responsible for the tunneling transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.3, '%', 1]

MgO
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(34754, 34755)
 Although the obtained TMRratio is small (0.3%), the TMR ratio is expected to be enhanced by suppressingleak current through amorphous-like crystal domains observed in MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.3, '%', 0]

In
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34766, 34766)
In-Plane Magnetoresistance on the Surface of Topological Insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34816, 34816)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34818, 34818)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34820, 34820)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34840, 34840)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34842, 34842)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34844, 34844)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34973, 34973)
 We use thin barrier approximation for investigating theFmidBmidF junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34975, 34975)
 We use thin barrier approximation for investigating theFmidBmidF junction.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34977, 34977)
 We use thin barrier approximation for investigating theFmidBmidF junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34997, 34997)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(34999, 34999)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(35001, 35001)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(35005, 35005)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(35007, 35007)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(35009, 35009)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(35051, 35051)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(35063, 35063)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(35065, 35065)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(35067, 35067)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(35075, 35075)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(35077, 35077)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(35079, 35079)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru2MnGe
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(35147, 35150)
Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 135, '%', 7]

Ru2MnGe
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(35206, 35209)
 Theantiferromagnet Ru2MnGe is used to pin the magnetization direction of aferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistancestacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 135, '%', 5]

Fe
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(35232, 35232)
 Theantiferromagnet Ru2MnGe is used to pin the magnetization direction of aferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistancestacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 135, '%', 5]

MgO
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(35238, 35239)
 Theantiferromagnet Ru2MnGe is used to pin the magnetization direction of aferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistancestacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 135, '%', 5]

Fe
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(35377, 35377)
 Using Feas a ferromagnetic electrode material we prepared magnetic tunneling junctionsand measured the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 135, '%', 1]

Fe
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(35443, 35443)
 We find a sizeable maximummagnetoresistance value of 135%, which is comparable to other common Fe basedMTJ systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 135, '%', 0]

MgO
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35574, 35575)
 We study the tunnel magnetoresistance (TMR) effect and magnetocrystallineanisotropy in a series of magnetic tunnel junctions (MTJs) with L<missing VAR>11-orderedfcc ferromagnetic alloys and MgO barrier along the [111] direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2000, '%', 2],[313.0, 10, ',', 6]

Co
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35669, 35669)
 The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2000, '%', 0],[219.0, 10, ',', 4]

CoNi
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35676, 35677)
 The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2000, '%', 0],[211.0, 10, ',', 4]

CoPt
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35681, 35682)
 The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2000, '%', 0],[206.0, 10, ',', 4]

Pd
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35688, 35688)
 The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2000, '%', 0],[200.0, 10, ',', 4]

Co
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35720, 35720)
 These MTJs haveenergetically favored Co-O interfaces where interfacial antibonding between Cod<missing VAR> and O p<missing VAR> states is formed around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2000, '%', 1],[168.0, 10, ',', 3]

O
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35722, 35722)
 These MTJs haveenergetically favored Co-O interfaces where interfacial antibonding between Cod<missing VAR> and O p<missing VAR> states is formed around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2000, '%', 1],[166.0, 10, ',', 3]

Co
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35734, 35734)
 These MTJs haveenergetically favored Co-O interfaces where interfacial antibonding between Cod<missing VAR> and O p<missing VAR> states is formed around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2000, '%', 1],[154.0, 10, ',', 3]

O
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35741, 35741)
 These MTJs haveenergetically favored Co-O interfaces where interfacial antibonding between Cod<missing VAR> and O p<missing VAR> states is formed around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2000, '%', 1],[147.0, 10, ',', 3]

P
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35852, 35852)
 Our calculation ofthe magnetocrystalline anisotropy shows that many L<missing VAR>11 alloys have largeperpendicular magnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 2000, '%', 3],[36.0, 10, ',', 1]

In
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35858, 35858)
 In particular, CoPt has the largestvalue of anisotropy energy Krm u<missing VAR> approx 10,rm MJ/m<missing VAR>3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2000, '%', 4],[30.0, 10, ',', 0]

CoPt
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35863, 35864)
 In particular, CoPt has the largestvalue of anisotropy energy Krm u<missing VAR> approx 10,rm MJ/m<missing VAR>3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2000, '%', 4],[24.0, 10, ',', 0]

K
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35881, 35881)
 In particular, CoPt has the largestvalue of anisotropy energy Krm u<missing VAR> approx 10,rm MJ/m<missing VAR>3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 2000, '%', 4],[7.0, 10, ',', 0]

P
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35916, 35916)
 We furtherconduct a perturbation analysis of the PM<missing VAR>A with respect to the spin-orbitinteraction and reveal that the large PM<missing VAR>A in CoPt and CoNi mainly originatesfrom spin-conserving perturbation processes around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 2000, '%', 5],[28.0, 10, ',', 1]

P
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35945, 35945)
 We furtherconduct a perturbation analysis of the PM<missing VAR>A with respect to the spin-orbitinteraction and reveal that the large PM<missing VAR>A in CoPt and CoNi mainly originatesfrom spin-conserving perturbation processes around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 2000, '%', 5],[57.0, 10, ',', 1]

CoPt
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35951, 35952)
 We furtherconduct a perturbation analysis of the PM<missing VAR>A with respect to the spin-orbitinteraction and reveal that the large PM<missing VAR>A in CoPt and CoNi mainly originatesfrom spin-conserving perturbation processes around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2000, '%', 5],[63.0, 10, ',', 1]

CoNi
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(35956, 35957)
 We furtherconduct a perturbation analysis of the PM<missing VAR>A with respect to the spin-orbitinteraction and reveal that the large PM<missing VAR>A in CoPt and CoNi mainly originatesfrom spin-conserving perturbation processes around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 2000, '%', 5],[68.0, 10, ',', 1]

Ga
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36008, 36008)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 30, 'K', 1],[92.0, 1.5, 'x', 2],[93.0, 0.3, 'um', 2],[124.0, 2.2, 'x', 2]

Mn
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36010, 36010)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 30, 'K', 1],[90.0, 1.5, 'x', 2],[91.0, 0.3, 'um', 2],[122.0, 2.2, 'x', 2]

As/GaAs
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36012, 36015)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[61.0, 30, 'K', 1],[85.0, 1.5, 'x', 2],[86.0, 0.3, 'um', 2],[117.0, 2.2, 'x', 2]

Ga
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36018, 36018)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 30, 'K', 1],[82.0, 1.5, 'x', 2],[83.0, 0.3, 'um', 2],[114.0, 2.2, 'x', 2]

Mn
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36020, 36020)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 30, 'K', 1],[80.0, 1.5, 'x', 2],[81.0, 0.3, 'um', 2],[112.0, 2.2, 'x', 2]

As
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36022, 36022)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 30, 'K', 1],[78.0, 1.5, 'x', 2],[79.0, 0.3, 'um', 2],[110.0, 2.2, 'x', 2]

Ga
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36049, 36049)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 30, 'K', 0],[51.0, 1.5, 'x', 1],[52.0, 0.3, 'um', 1],[83.0, 2.2, 'x', 1]

Mn
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36051, 36051)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 30, 'K', 0],[49.0, 1.5, 'x', 1],[50.0, 0.3, 'um', 1],[81.0, 2.2, 'x', 1]

As/GaAs
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36053, 36056)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 30, 'K', 0],[44.0, 1.5, 'x', 1],[45.0, 0.3, 'um', 1],[76.0, 2.2, 'x', 1]

Ga
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36059, 36059)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 30, 'K', 0],[41.0, 1.5, 'x', 1],[42.0, 0.3, 'um', 1],[73.0, 2.2, 'x', 1]

Mn
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36061, 36061)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 30, 'K', 0],[39.0, 1.5, 'x', 1],[40.0, 0.3, 'um', 1],[71.0, 2.2, 'x', 1]

As
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(36063, 36063)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 30, 'K', 0],[37.0, 1.5, 'x', 1],[38.0, 0.3, 'um', 1],[69.0, 2.2, 'x', 1]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(36391, 36394)
Tunneling magnetoresistance devices based on topological insulators Ferromagnet/insulator/topological-insulator junctions employing Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 1000, '%', 4]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(36452, 36455)
 We theoretically investigate tunneling magnetoresistance (TMR) devices, whichare probing the spin-momentum coupled nature of surface states of thethree-dimensional topological insulator Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 1000, '%', 3]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(36484, 36487)
 Theoreticalcalculations are performed based on a realistic tight-binding model forBi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1000, '%', 2]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(36516, 36519)
 We study both three dimensional devices, which exploit thesurface states of Bi2Se3, as well as two-dimensional devices, whichexploit the edge states of thin Bi2Se3 strips.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1000, '%', 1]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(36550, 36553)
 We study both three dimensional devices, which exploit thesurface states of Bi2Se3, as well as two-dimensional devices, whichexploit the edge states of thin Bi2Se3 strips.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1000, '%', 1]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(36573, 36576)
 We demonstrate thatthe material properties of Bi2Se3 allow a TMR ratio at roomtemperature of the order of 1000%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 1000, '%', 0]

S
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(36691, 36691)
 The devices can beused to measure the spin polarization of the topological surface states as analternative to spin-ARPES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1000, '%', 2]

Nb
###Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang###
(36788, 36788)
Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1.85, 'mJ', 4],[193.0, 120, '%', 6],[217.0, 0.011, 'determined', 6]

Nb
###Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang###
(36793, 36793)
 Nb and its compounds are widely used in quantum computing due to their highsuperconducting transition temperatures and high critical fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1.85, 'mJ', 3],[188.0, 120, '%', 5],[212.0, 0.011, 'determined', 5]

Nb
###Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang###
(36887, 36887)
 Here we report the study of magnetic tunnel junctionswith Nb as the heavy metal layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1.85, 'mJ', 1],[94.0, 120, '%', 3],[118.0, 0.011, 'determined', 3]

Nb/CoFeB/MgO
###Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang###
(36927, 36934)
 An interfacial perpendicular magneticanisotropy energy density of 1.85 mJ/m<missing VAR>2 was obtained in Nb/CoFeB/MgOheterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[11.0, 1.85, 'mJ', 0],[47.0, 120, '%', 2],[71.0, 0.011, 'determined', 2]

In
###Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang###
(37014, 37014)
 In addition,spin-transfer torque switching has also been successfully observed in thesejunctions with a quasistatic switching current density of 7.3105 A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1.85, 'mJ', 3],[33.0, 120, '%', 1],[9.0, 0.011, 'determined', 1]

Si
###Inelastic electron tunneling spectroscopy of local "spin accumulation" devices|Holly N. Tinkey,Pengke Li,Ian Appelbaum###
(37140, 37140)
 We investigate the origin of purported spin accumulation signals observedin local three-terminal (3T) measurements of ferromagnet/insulator/n<missing VAR>-Situnnel junctions using inelastic electron tunneling spectroscopy (IETS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 3, 'T', 1]

I
###Inelastic electron tunneling spectroscopy of local "spin accumulation" devices|Holly N. Tinkey,Pengke Li,Ian Appelbaum###
(37158, 37158)
 We investigate the origin of purported spin accumulation signals observedin local three-terminal (3T) measurements of ferromagnet/insulator/n<missing VAR>-Situnnel junctions using inelastic electron tunneling spectroscopy (IETS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3, 'T', 1]

S
###Inelastic electron tunneling spectroscopy of local "spin accumulation" devices|Holly N. Tinkey,Pengke Li,Ian Appelbaum###
(37161, 37161)
 We investigate the origin of purported spin accumulation signals observedin local three-terminal (3T) measurements of ferromagnet/insulator/n<missing VAR>-Situnnel junctions using inelastic electron tunneling spectroscopy (IETS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 3, 'T', 1]

I
###Inelastic electron tunneling spectroscopy of local "spin accumulation" devices|Holly N. Tinkey,Pengke Li,Ian Appelbaum###
(37182, 37182)
Voltage bias and magnetic field dependences of the IET spectra were found toaccount for the dominant contribution to 3T magnetoresistance signals, thusindicating that it arises from inelastic tunneling through impurities anddefects at junction interfaces and within the barrier, rather than from spinaccumulation due to pure elastic tunneling into bulk Si as has been previouslyassumed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 3, 'T', 0]

Si
###Inelastic electron tunneling spectroscopy of local "spin accumulation" devices|Holly N. Tinkey,Pengke Li,Ian Appelbaum###
(37279, 37279)
Voltage bias and magnetic field dependences of the IET spectra were found toaccount for the dominant contribution to 3T magnetoresistance signals, thusindicating that it arises from inelastic tunneling through impurities anddefects at junction interfaces and within the barrier, rather than from spinaccumulation due to pure elastic tunneling into bulk Si as has been previouslyassumed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 3, 'T', 0]

Co2
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(37367, 37368)
 Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometricCo2-based Heusler alloy shows a intense dependency of the tunnelmagnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratiosof up to 1995% at 4.2 K for 1. This work reports on the electronic structure ofnon-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x<missing VAR>  z<missing VAR>  2 0.38.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 1995, '%', 0],[61.0, 4.2, 'K', 0],[64.0, 1.0, 'This', 0]

Mn
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(37403, 37403)
 Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometricCo2-based Heusler alloy shows a intense dependency of the tunnelmagnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratiosof up to 1995% at 4.2 K for 1. This work reports on the electronic structure ofnon-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x<missing VAR>  z<missing VAR>  2 0.38.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1995, '%', 0],[26.0, 4.2, 'K', 0],[29.0, 1.0, 'This', 0]

Co/Ge
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(37467, 37469)
 Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometricCo2-based Heusler alloy shows a intense dependency of the tunnelmagnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratiosof up to 1995% at 4.2 K for 1. This work reports on the electronic structure ofnon-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x<missing VAR>  z<missing VAR>  2 0.38.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[42.0, 1995, '%', 0],[38.0, 4.2, 'K', 0],[35.0, 1.0, 'This', 0]

Co2MnGe
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(37590, 37593)
 Thehigh-resolution measurements of the valence band of the non-stoichiometricCoxMnyGez films close to the Fermi energy indicate a shift of the spectralweight compared to bulk Co2MnGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 1995, '%', 2],[161.0, 4.2, 'K', 2],[158.0, 1.0, 'This', 2]

Co2MnGe
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(37649, 37652)
 Furthermore it is shown thatthe co-sputtering of Co2MnGe together with additional Mn is an appropriatetechnique to adjust the stoichiometry of the CoxMnyGez film composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 1995, '%', 4],[220.0, 4.2, 'K', 4],[217.0, 1.0, 'This', 4]

Mn
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(37660, 37660)
 Furthermore it is shown thatthe co-sputtering of Co2MnGe together with additional Mn is an appropriatetechnique to adjust the stoichiometry of the CoxMnyGez film composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 1995, '%', 4],[231.0, 4.2, 'K', 4],[228.0, 1.0, 'This', 4]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(37776, 37779)
Magnetic properties of epitaxial Fe3O4 films with various crystal orientations and TMR effect in room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, -12, '%', 8]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(37806, 37809)
 Fe3O4 is a ferrimagnetic spinel ferrite that exhibits electricconductivity at room temperature (RT).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, -12, '%', 7]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(37891, 37894)
 Although the material has been predictedto be a half metal according to ab-initio calculations, magnetic tunneljunctions (MTJs) with Fe3O4 electrodes have demonstrated a small tunnelmagnetoresistance effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, -12, '%', 6]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(37962, 37965)
 Here, we report on the magnetic properties ofepitaxial Fe3O4 films with various crystal orientations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, -12, '%', 4]

In
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(38000, 38000)
 Inparticular, Fe3O4(110) films exhibited in-plane uniaxial magneticanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, -12, '%', 2]

O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(38008, 38009)
 Inparticular, Fe3O4(110) films exhibited in-plane uniaxial magneticanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, -12, '%', 2]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(38045, 38048)
 With respect to the squareness of hysteresis, Fe3O4 (111)demonstrated the largest squareness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, -12, '%', 1]

O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(38080, 38081)
 Furthermore, we fabricated MTJs withFe3O4(110) electrodes, and obtained an TMR effect of -12% at RT.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, -12, '%', 0]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(38139, 38142)
 Thenegative TMR ratio corresponded to the negative spin polarization ofFe3O4 predicted from band calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, -12, '%', 1]

Co/Gd
###Picosecond Switching of Optomagnetic Tunnel Junctions|Luding Wang,Houyi Cheng,Pingzhi Li,Yang Liu,Youri L. W. van Hees,Reinoud Lavrijsen,Xiaoyang Lin,Kaihua Cao,Bert Koopmans,Weisheng Zhao###
(38371, 38373)
 This composite device incorporates anall-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-basedperpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosidainteraction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[106.0, 4, ',', 3]

CoFeB/MgO
###Picosecond Switching of Optomagnetic Tunnel Junctions|Luding Wang,Houyi Cheng,Pingzhi Li,Yang Liu,Youri L. W. van Hees,Reinoud Lavrijsen,Xiaoyang Lin,Kaihua Cao,Bert Koopmans,Weisheng Zhao###
(38383, 38388)
 This composite device incorporates anall-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-basedperpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosidainteraction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[118.0, 4, ',', 3]

Cu
###Oxide spintronics|Manuel Bibes,Agnes Barthelemy###
(38638, 38638)
 While this was at first motivated by thediscovery of high-temperature superconductivity in perovskite Cu oxides, thistechnological breakthrough was soon applied to other transition metal oxides,and notably mixed-valence manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Oxide spintronics|Manuel Bibes,Agnes Barthelemy###
(38858, 38858)
 In this paper, we will review the most important results onoxide spintronics, emphasizing materials physics as well as spin-dependenttransport phenomena, and finally give some perspectives on how the flurry ofnew magnetic oxides could be useful for next-generation spintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(38981, 38981)
Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(38985, 38985)
Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(38989, 38989)
Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(38993, 38999)
Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(39161, 39161)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(39165, 39165)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(39169, 39169)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(39173, 39179)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(39199, 39199)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(39204, 39210)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Tunnel magnetoresistance and temperature related effects in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Chih-Huang Lai###
(39322, 39322)
 Temperature dependence of the tunnel magnetoresistance (TMR) was calculatedin range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs)with embedded nanoparticles (NPs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NP
###Tunnel magnetoresistance and temperature related effects in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Chih-Huang Lai###
(39337, 39338)
 The electron tunnel transport through NP wassimulated in range of double barrier approach, which was integrated into themodel of the magnetic point-like contact.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(39962, 39962)
I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(39964, 39964)
I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(39970, 39973)
I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(39993, 39993)
 In this work, we calculate with ab initio methods the current-voltagecharacteristics for ideal single- and double-barrier Fe/MgO (001) magnetictunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(40034, 40037)
 In this work, we calculate with ab initio methods the current-voltagecharacteristics for ideal single- and double-barrier Fe/MgO (001) magnetictunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(40080, 40080)
 The current is calculated in the phase-coherent limit byusing the recently developed SMEAGOL code, combining the nonequilibrium Greenfunction formalism with density-functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(40113, 40113)
 In general we find thatdouble-barrier junctions display a larger magnetoresistance, which decays withbias at a slower pace than their single-barrier counterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(40192, 40192)
 This is explainedin terms of enhanced spin filtering from the middle Fe layer sandwiched inbetween the two MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(40207, 40208)
 This is explainedin terms of enhanced spin filtering from the middle Fe layer sandwiched inbetween the two MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(40213, 40213)
 In addition, for double-barrier tunnel junctions,we find a well defined peak in the magnetoresistance at a voltage of V0.1 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V0.1
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(40256, 40257)
 In addition, for double-barrier tunnel junctions,we find a well defined peak in the magnetoresistance at a voltage of V0.1 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(40259, 40259)
 In addition, for double-barrier tunnel junctions,we find a well defined peak in the magnetoresistance at a voltage of V0.1 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Skyrmion meets magnetic tunnel junction: an efficient way for electrical skyrmion detection investigated by ab initio theory|Jonas Friedrich Schäfer-Richarz,Philipp Risius,Michael Czerner,Christian Heiliger###
(40353, 40353)
 In our proof-of-principle study we examine the influence of skyrmions onmagnetoresistive transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Skyrmion meets magnetic tunnel junction: an efficient way for electrical skyrmion detection investigated by ab initio theory|Jonas Friedrich Schäfer-Richarz,Philipp Risius,Michael Czerner,Christian Heiliger###
(40385, 40385)
 In particular, we show that magnetic tunneljunctions are a technologically appealing and promising way for electricaldetection of non-collinear magnetic structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlO
###Dielectric breakdown in underoxidized magnetic tunnel junctions: Dependence on oxidation time and area|J. Ventura,R. Ferreira,J. B. Sousa,P. P. Freitas###
(40569, 40570)
 Magnetic tunnel junctions (MTJs) with partially oxidized 9 AAAlOx<missing VAR>-barriers were recently shown to have the necessary characteristics tobe used as magnetoresistive sensors in high-density storage devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Dielectric breakdown in underoxidized magnetic tunnel junctions: Dependence on oxidation time and area|J. Ventura,R. Ferreira,J. B. Sousa,P. P. Freitas###
(40813, 40813)
In fact, in the extremely underoxidized magnetic tunnel junctions, failure isexclusively related with extrinsic causes, independently of MTJ-area.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Dielectric breakdown in underoxidized magnetic tunnel junctions: Dependence on oxidation time and area|J. Ventura,R. Ferreira,J. B. Sousa,P. P. Freitas###
(40910, 40910)
 Theseresults are related with the presence of defects in the barrier (weak spotsthat lead to intrinsic breakdown) and of metallic unoxidized Alnanoconstrictions (leading to extrinsic breakdown).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuInSe2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41183, 41186)
First-principles study on magnetic tunneling junctions with semiconducting CuInSe2 and CuGaSe2 barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaSe2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41190, 41193)
First-principles study on magnetic tunneling junctions with semiconducting CuInSe2 and CuGaSe2 barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuInSe2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41228, 41231)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CIS)
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41233, 41237)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaSe2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41241, 41244)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41248, 41248)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41250, 41250)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuIn1-xGa
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41278, 41283)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Se2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41287, 41288)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41411, 41413)
It is found that the Delta1 wave functions have dominant contributions tothe spin-dependent tunneling transport in both CIS- and CG<missing VAR>S-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41418, 41418)
It is found that the Delta1 wave functions have dominant contributions tothe spin-dependent tunneling transport in both CIS- and CG<missing VAR>S-based MTJs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41420, 41420)
It is found that the Delta1 wave functions have dominant contributions tothe spin-dependent tunneling transport in both CIS- and CG<missing VAR>S-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41440, 41440)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41442, 41442)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41481, 41483)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41518, 41518)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuIn1-xGa
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41529, 41534)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Se2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41536, 41537)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41593, 41593)
 We further study therelationship between the band gaps in the barriers and MR ratios by changingthe Coulomb repulsions in the Cu 3d<missing VAR> states of the CIS and CG<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41604, 41606)
 We further study therelationship between the band gaps in the barriers and MR ratios by changingthe Coulomb repulsions in the Cu 3d<missing VAR> states of the CIS and CG<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41610, 41610)
 We further study therelationship between the band gaps in the barriers and MR ratios by changingthe Coulomb repulsions in the Cu 3d<missing VAR> states of the CIS and CG<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41612, 41612)
 We further study therelationship between the band gaps in the barriers and MR ratios by changingthe Coulomb repulsions in the Cu 3d<missing VAR> states of the CIS and CG<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41671, 41673)
 Thecomparison of MR ratios and R<missing VAR>A between the CIS-, CG<missing VAR>S-, and MgO-based MTJs arealso given.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41677, 41677)
 Thecomparison of MR ratios and R<missing VAR>A between the CIS-, CG<missing VAR>S-, and MgO-based MTJs arealso given.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41679, 41679)
 Thecomparison of MR ratios and R<missing VAR>A between the CIS-, CG<missing VAR>S-, and MgO-based MTJs arealso given.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(41685, 41686)
 Thecomparison of MR ratios and R<missing VAR>A between the CIS-, CG<missing VAR>S-, and MgO-based MTJs arealso given.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride|Oleg V. Yazyev,Alfredo Pasquarello###
(41753, 41753)
 We propose monolayer epitaxial graphene and hexagonal boron nitride (h<missing VAR>-BN) asultimate thickness covalent spacers for magnetoresistive junctions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 100, '%', 2]

Ni
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(41950, 41950)
Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, -10, ',', 6],[337.0, 10, ',', 7],[359.0, 70, ',', 7]

Mn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(41952, 41952)
Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, -10, ',', 6],[335.0, 10, ',', 7],[357.0, 70, ',', 7]

Sn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(41954, 41954)
Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, -10, ',', 6],[333.0, 10, ',', 7],[355.0, 70, ',', 7]

CoFeB/MgO/CoFeB
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(41966, 41975)
Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[243.0, -10, ',', 6],[312.0, 10, ',', 7],[334.0, 70, ',', 7]

Ni
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42107, 42107)
 Here, wedemonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used toapply a unidirectional anisotropy to magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, -10, ',', 2],[180.0, 10, ',', 3],[202.0, 70, ',', 3]

Mn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42109, 42109)
 Here, wedemonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used toapply a unidirectional anisotropy to magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, -10, ',', 2],[178.0, 10, ',', 3],[200.0, 70, ',', 3]

Sn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42111, 42111)
 Here, wedemonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used toapply a unidirectional anisotropy to magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, -10, ',', 2],[176.0, 10, ',', 3],[198.0, 70, ',', 3]

Ni
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42151, 42151)
 For this, weuse epitaxial Ni-Mn-Sn films as pinning layers for microfabricatedCoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, -10, ',', 1],[136.0, 10, ',', 2],[158.0, 70, ',', 2]

Mn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42153, 42153)
 For this, weuse epitaxial Ni-Mn-Sn films as pinning layers for microfabricatedCoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, -10, ',', 1],[134.0, 10, ',', 2],[156.0, 70, ',', 2]

Sn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42155, 42155)
 For this, weuse epitaxial Ni-Mn-Sn films as pinning layers for microfabricatedCoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, -10, ',', 1],[132.0, 10, ',', 2],[154.0, 70, ',', 2]

CoFeB/MgO/CoFeB
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42170, 42179)
 For this, weuse epitaxial Ni-Mn-Sn films as pinning layers for microfabricatedCoFeB/MgO/CoFeB magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, -10, ',', 1],[108.0, 10, ',', 2],[130.0, 70, ',', 2]

H
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42202, 42202)
 We compare the exchange bias field(HtextE<missing VAR>B) measured after field cooling in -10,k<missing VAR>Oe external field bymagnetization measurements with HtextE<missing VAR>B obtained from tunnelmagnetoresistance measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, -10, ',', 0],[85.0, 10, ',', 1],[107.0, 70, ',', 1]

B
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42205, 42205)
 We compare the exchange bias field(HtextE<missing VAR>B) measured after field cooling in -10,k<missing VAR>Oe external field bymagnetization measurements with HtextE<missing VAR>B obtained from tunnelmagnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, -10, ',', 0],[82.0, 10, ',', 1],[104.0, 70, ',', 1]

H
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42237, 42237)
 We compare the exchange bias field(HtextE<missing VAR>B) measured after field cooling in -10,k<missing VAR>Oe external field bymagnetization measurements with HtextE<missing VAR>B obtained from tunnelmagnetoresistance measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, -10, ',', 0],[50.0, 10, ',', 1],[72.0, 70, ',', 1]

B
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42240, 42240)
 We compare the exchange bias field(HtextE<missing VAR>B) measured after field cooling in -10,k<missing VAR>Oe external field bymagnetization measurements with HtextE<missing VAR>B obtained from tunnelmagnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, -10, ',', 0],[47.0, 10, ',', 1],[69.0, 70, ',', 1]

H
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42277, 42277)
 Consistent for both methods we find an exchangebias of about HtextE<missing VAR>B130,Oe at 10,K, which decreases with increasingtemperature and vanishes above 70,K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, -10, ',', 1],[10.0, 10, ',', 0],[32.0, 70, ',', 0]

B130
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42280, 42281)
 Consistent for both methods we find an exchangebias of about HtextE<missing VAR>B130,Oe at 10,K, which decreases with increasingtemperature and vanishes above 70,K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, -10, ',', 1],[6.0, 10, ',', 0],[28.0, 70, ',', 0]

K
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42289, 42289)
 Consistent for both methods we find an exchangebias of about HtextE<missing VAR>B130,Oe at 10,K, which decreases with increasingtemperature and vanishes above 70,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, -10, ',', 1],[2.0, 10, ',', 0],[20.0, 70, ',', 0]

K
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(42311, 42311)
 Consistent for both methods we find an exchangebias of about HtextE<missing VAR>B130,Oe at 10,K, which decreases with increasingtemperature and vanishes above 70,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, -10, ',', 1],[24.0, 10, ',', 0],[2.0, 70, ',', 0]

NSN
###Spintronics with NSN Junction of one-dimensional quantum wires : A study of Pure Spin Current and Magnetoresistance|Sourin Das,Sumathi Rao,Arijit Saha###
(42326, 42328)
Spintronics with NSN Junction of one-dimensional quantum wires  A study of Pure Spin Current and Magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs/Fe
###High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions|M. Zenger,J. Moser,W. Wegscheider,D. Weiss,T. Dietl###
(42665, 42670)
High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 6, 'to', 1],[15.0, 10, 'nm', 1]

Au
###Spin injection in a single metallic nanoparticle: a step towards nanospintronics|A. Bernand-Mantel,P. Seneor,N. Lidgi,M. Munoz,V. Cros,S. Fusil,K. Bouzehouane,C. Deranlot,A. Vaures,F. Petroff,A. Fert###
(42990, 42990)
 Coulomb blockade effects show clear evidence forsingle electron tunneling through a single 2.5 nm Au cluster.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2.5, 'nm', 0]

H
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43171, 43171)
 Half-metallic magnets(HM<missing VAR>Ms) have been suggested as ideal electrode materials for MTJs to achieve anextremely large tunnel-magnetoresistance (TMR) effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43242, 43242)
 Despite their high TMRratios, MTJs based on HM<missing VAR>Ms do not exhibit current rectification, i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43293, 43293)
, a diodeeffect, which was achieved in a magnetic tunnel junction concept based on HM<missing VAR>Msand type-II spin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43302, 43303)
, a diodeeffect, which was achieved in a magnetic tunnel junction concept based on HM<missing VAR>Msand type-II spin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43312, 43312)
, a diodeeffect, which was achieved in a magnetic tunnel junction concept based on HM<missing VAR>Msand type-II spin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43342, 43342)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43372, 43373)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43375, 43375)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43377, 43377)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43382, 43382)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeVTaAl
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43392, 43395)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeVTiSi
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43398, 43401)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0.25,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnVTiAl
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43404, 43407)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoVTiSb
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43412, 43415)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43547, 43547)
 We show that,in contrast to conventional semiconductor diodes, the rectification biasvoltage window (or breakdown voltage) of the MTJs is limited by the spin gap ofthe HMM and SG<missing VAR>S Heusler compounds.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43553, 43553)
 We show that,in contrast to conventional semiconductor diodes, the rectification biasvoltage window (or breakdown voltage) of the MTJs is limited by the spin gap ofthe HMM and SG<missing VAR>S Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(43555, 43555)
 We show that,in contrast to conventional semiconductor diodes, the rectification biasvoltage window (or breakdown voltage) of the MTJs is limited by the spin gap ofthe HMM and SG<missing VAR>S Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(44028, 44033)
Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(44059, 44062)
 The electronic structure and spin-dependent tunneling in epitaxialFe/MgO/Fe(001) tunnel junctions are studied using first-principlescalculations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgO
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(44091, 44092)
 For small MgO barrier thickness the minority-spin resonant bandsat the two interfaces make a significant contribution to the tunnelingconductance for the antiparallel magnetization, whereas these bands are, inpractice, mismatched by disorder and/or small applied bias for the parallelmagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(44213, 44214)
 This explains the experimentally observed decrease in tunnelingmagnetoresistance (TMR) for thin MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(44232, 44232)
 We predict that a monolayer ofAg epitaxially deposited at the interface between Fe and MgO suppressestunneling through the interface band and may thus be used to enhance the TMRfor thin barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(44246, 44246)
 We predict that a monolayer ofAg epitaxially deposited at the interface between Fe and MgO suppressestunneling through the interface band and may thus be used to enhance the TMRfor thin barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(44250, 44251)
 We predict that a monolayer ofAg epitaxially deposited at the interface between Fe and MgO suppressestunneling through the interface band and may thus be used to enhance the TMRfor thin barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions|G. D. Fuchs,J. A. Katine,S. I. Kiselev,D. Mauri,K. S. Wooley,D. C. Ralph,R. A. Buhrman###
(44321, 44322)
Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 10, '%', 2],[160.0, 40, '%', 2]

S
###Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions|G. D. Fuchs,J. A. Katine,S. I. Kiselev,D. Mauri,K. S. Wooley,D. C. Ralph,R. A. Buhrman###
(44342, 44342)
 We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs)with ultra-thin MgO tunnel barrier layers to investigate the relationshipbetween the spin-transfer torque and the tunnel magnetoresistance (TMR) underfinite bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 10, '%', 1],[140.0, 40, '%', 1]

MgO
###Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions|G. D. Fuchs,J. A. Katine,S. I. Kiselev,D. Mauri,K. S. Wooley,D. C. Ralph,R. A. Buhrman###
(44369, 44370)
 We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs)with ultra-thin MgO tunnel barrier layers to investigate the relationshipbetween the spin-transfer torque and the tunnel magnetoresistance (TMR) underfinite bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 10, '%', 1],[112.0, 40, '%', 1]

P
###Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions|Jiaqi Zhou,Weisheng Zhao,Yin Wang,Shouzhong Peng,Junfeng Qiao,Li Su,Lang Zeng,Na Lei,Lei Liu,Youguang Zhang,Arnaud Bournel###
(44608, 44608)
 It has been reported in experiments that capping layers which enhance theperpendicular magnetic anisotropy (PM<missing VAR>A) of magnetic tunnel junctions (MTJs)induce great impact on the tunnel magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions|Jiaqi Zhou,Weisheng Zhao,Yin Wang,Shouzhong Peng,Junfeng Qiao,Li Su,Lang Zeng,Na Lei,Lei Liu,Youguang Zhang,Arnaud Bournel###
(44909, 44909)
 This phenomenon isattributed to the resonant tunnel transmission effect and we explained it bythe layer-resolved density of states (D<missing VAR>OS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions|Jiaqi Zhou,Weisheng Zhao,Yin Wang,Shouzhong Peng,Junfeng Qiao,Li Su,Lang Zeng,Na Lei,Lei Liu,Youguang Zhang,Arnaud Bournel###
(44913, 44913)
 In order to explore transportproperties in MTJs, the density of scattering states (D<missing VAR>OSS) was studied fromthe point of band symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions|Jiaqi Zhou,Weisheng Zhao,Yin Wang,Shouzhong Peng,Junfeng Qiao,Li Su,Lang Zeng,Na Lei,Lei Liu,Youguang Zhang,Arnaud Bournel###
(44947, 44947)
 In order to explore transportproperties in MTJs, the density of scattering states (D<missing VAR>OSS) was studied fromthe point of band symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions|Jiaqi Zhou,Weisheng Zhao,Yin Wang,Shouzhong Peng,Junfeng Qiao,Li Su,Lang Zeng,Na Lei,Lei Liu,Youguang Zhang,Arnaud Bournel###
(44978, 44979)
 It has been found that CoFetungsten interfaceblocks scattering states transmission in the anti-parallel condition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45092, 45092)
Magnetoresistance in Co-h<missing VAR>BN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin h<missing VAR>BN barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45095, 45096)
Magnetoresistance in Co-h<missing VAR>BN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin h<missing VAR>BN barriers.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45098, 45099)
Magnetoresistance in Co-h<missing VAR>BN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin h<missing VAR>BN barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45124, 45125)
Magnetoresistance in Co-h<missing VAR>BN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin h<missing VAR>BN barriers.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45139, 45139)
 Hexagonal boron nitride (h<missing VAR>BN) is a prototypical high-quality two-dimensionalinsulator and an ideal material to study tunneling phenomena, as it can beeasily integrated in vertical van der Waals devices.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45291, 45292)
 Herewe reveal the effect of point defects inevitably present in mechanicallyexfoliated h<missing VAR>BN on the tunnel magnetoresistance of Co-h<missing VAR>BN-NiFe MTJs.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45304, 45304)
 Herewe reveal the effect of point defects inevitably present in mechanicallyexfoliated h<missing VAR>BN on the tunnel magnetoresistance of Co-h<missing VAR>BN-NiFe MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45307, 45308)
 Herewe reveal the effect of point defects inevitably present in mechanicallyexfoliated h<missing VAR>BN on the tunnel magnetoresistance of Co-h<missing VAR>BN-NiFe MTJs.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45310, 45311)
 Herewe reveal the effect of point defects inevitably present in mechanicallyexfoliated h<missing VAR>BN on the tunnel magnetoresistance of Co-h<missing VAR>BN-NiFe MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45428, 45429)
 The spin polarization of the defectstates is attributed to exchange coupling of a paramagnetic impurity in thefew-atomic-layer thick h<missing VAR>BN to the ferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45486, 45487)
 Our findings should be takeninto account in analyzing tunneling processes in h<missing VAR>BN-based magnetic devices.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(45521, 45522)
More generally, our study shows the potential of using atomically thin h<missing VAR>BNbarriers with defects to engineer the magnetoresistance of MTJs and to achievespin filtering, opening the door towards exploiting the spin degree of freedomin current studies of point defects as quantum emitters.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Control of sensitivity in vortex-type magnetic tunnel junction magnetometer sensors by the pinned layer geometry|Motoki Endo,Muftah Al-Mahdawi,Mikihiko Oogane,Yasuo Ando###
(45721, 45721)
 In this work, we develop sensor MTJs with NiFe sensing layershaving a vortex magnetic configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.85, 'to', 2]

NiFe
###Control of sensitivity in vortex-type magnetic tunnel junction magnetometer sensors by the pinned layer geometry|Motoki Endo,Muftah Al-Mahdawi,Mikihiko Oogane,Yasuo Ando###
(45740, 45741)
 In this work, we develop sensor MTJs with NiFe sensing layershaving a vortex magnetic configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.85, 'to', 2]

I
###Magnetic Diode Effect in Double Barrier Tunnel Junctions|M. Chshiev,D. Stoeffler,A. Vedyayev,K. Ounadjela###
(46161, 46161)
 For these junctions a strong asymmetric behaviour in theI-V characteristics and the tunnel magnetoresistance (TMR) is predicted whichcan be controlled by an applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetic Diode Effect in Double Barrier Tunnel Junctions|M. Chshiev,D. Stoeffler,A. Vedyayev,K. Ounadjela###
(46163, 46163)
 For these junctions a strong asymmetric behaviour in theI-V characteristics and the tunnel magnetoresistance (TMR) is predicted whichcan be controlled by an applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(46301, 46301)
 In double spin filter (SF) tunnel junctions, the spin information isgenerated and analyzed purely from the SF effect with nonmagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SF)
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(46309, 46312)
 In double spin filter (SF) tunnel junctions, the spin information isgenerated and analyzed purely from the SF effect with nonmagnetic electrodes.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(46340, 46341)
 In double spin filter (SF) tunnel junctions, the spin information isgenerated and analyzed purely from the SF effect with nonmagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(46353, 46353)
In this article we numerically evaluate the bias dependence ofmagnetoresistance in such tunnel junctions (nonmagnetic metal / SF /nonmagnetic insulator / SF / nonmagnetic metal), particularly in cases whendifferent SF materials are utilized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(46391, 46392)
In this article we numerically evaluate the bias dependence ofmagnetoresistance in such tunnel junctions (nonmagnetic metal / SF /nonmagnetic insulator / SF / nonmagnetic metal), particularly in cases whendifferent SF materials are utilized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(46403, 46404)
In this article we numerically evaluate the bias dependence ofmagnetoresistance in such tunnel junctions (nonmagnetic metal / SF /nonmagnetic insulator / SF / nonmagnetic metal), particularly in cases whendifferent SF materials are utilized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(46425, 46426)
In this article we numerically evaluate the bias dependence ofmagnetoresistance in such tunnel junctions (nonmagnetic metal / SF /nonmagnetic insulator / SF / nonmagnetic metal), particularly in cases whendifferent SF materials are utilized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WKB
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(46466, 46468)
 A large magnetoresistance withnonmonotonic and asymmetric bias dependence is expected within the frame of WKBapproximation.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46570, 46570)
 Quantum-well (Q<missing VAR>W) devices have been extensively investigated in semiconductorstructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 5, 'K', 5]

In
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46623, 46623)
 In this work, we demonstrate the spin-based control ofthe quantized states in iron 3d<missing VAR>-band Q<missing VAR>Ws, as observed in experiments andtheoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 5, 'K', 3]

Fe
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46696, 46696)
 We find that the magnetization rotation in the Fe Q<missing VAR>Wssignificantly shifts the Q<missing VAR>W quantization levels, which modulate theresonant-tunneling current in MTJs, resulting in a tunneling anisotropicmagnetoresistance (TAMR) effect of Q<missing VAR>Ws.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 5, 'K', 2]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46709, 46709)
 We find that the magnetization rotation in the Fe Q<missing VAR>Wssignificantly shifts the Q<missing VAR>W quantization levels, which modulate theresonant-tunneling current in MTJs, resulting in a tunneling anisotropicmagnetoresistance (TAMR) effect of Q<missing VAR>Ws.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 5, 'K', 2]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46767, 46767)
 This Q<missing VAR>W-TAMR effect is sizable comparedto other types of TAMR effect, and it is present above the room-temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 5, 'K', 1]

In
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46816, 46816)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 5, 'K', 0]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46822, 46822)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 5, 'K', 0]

Cr/Fe/MgAl2O4
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46830, 46838)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[77.0, 5, 'K', 0]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46850, 46850)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 5, 'K', 0]

Cr
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46865, 46865)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 5, 'K', 0]

Fe
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46869, 46869)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 5, 'K', 0]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46890, 46890)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 5, 'K', 0]

K
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46934, 46934)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 5, 'K', 0]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(46946, 46946)
 The magnetic control of Q<missing VAR>W transport can open new applications forspin-coupled optoelectronic devices, ultra-thin sensors, and memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 5, 'K', 1]

Fe/GaAs/Au
###Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects|M. Wimmer,M. Lobenhofer,J. Moser,A. Matos-Abiague,D. Schuh,W. Wegscheider,J. Fabian,K. Richter,D. Weiss###
(46998, 47003)
Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions orbital effects.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs/Au
###Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects|M. Wimmer,M. Lobenhofer,J. Moser,A. Matos-Abiague,D. Schuh,W. Wegscheider,J. Fabian,K. Richter,D. Weiss###
(47024, 47029)
 We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctionsdemonstrating that the tunneling anisotropic magnetoresistance (TAMR) effectcan be controlled by a magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs
###Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects|M. Wimmer,M. Lobenhofer,J. Moser,A. Matos-Abiague,D. Schuh,W. Wegscheider,J. Fabian,K. Richter,D. Weiss###
(47119, 47120)
 Theoretical modelling shows that theinterplay of the orbital effects of a magnetic field and the Dresselhausspin-orbit coupling in the GaAs barrier leads to an independent contribution tothe TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbitcoupling does not play a role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata###
(47247, 47247)
 In spintronics, one of the long standing questions is why the MgO-basedmagnetic tunnel junction (MTJ) is almost the only option to achieve a largetunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not aslarge as the theoretical prediction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 66, ',', 2],[193.0, 75, ',', 2],[195.0, 83, 'and', 2],[267.0, 83, 'with', 3],[281.0, 229, '%', 3],[338.0, 86, ',', 4],[371.0, 142, '%', 4]

MgO
###Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata###
(47270, 47271)
 In spintronics, one of the long standing questions is why the MgO-basedmagnetic tunnel junction (MTJ) is almost the only option to achieve a largetunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not aslarge as the theoretical prediction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 66, ',', 2],[169.0, 75, ',', 2],[171.0, 83, 'and', 2],[243.0, 83, 'with', 3],[257.0, 229, '%', 3],[314.0, 86, ',', 4],[347.0, 142, '%', 4]

Mn100-x
###Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata###
(47382, 47385)
 This study focuses on the development ofan almost strain-free MTJ using metastable bcc CoxMn100-x ferromagnetic films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[52.0, 66, ',', 1],[55.0, 75, ',', 1],[57.0, 83, 'and', 1],[129.0, 83, 'with', 2],[143.0, 229, '%', 2],[200.0, 86, ',', 3],[233.0, 142, '%', 3]

Mn100-x/MgO
###Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata###
(47419, 47425)
We have investigated the degree of crystallisation in MTJ consisting ofCoxMn100-x/MgO/CoxMn100-x (x<missing VAR>  66, 75, 83 and 86) in relation to their TMRratios.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[12.0, 66, ',', 0],[15.0, 75, ',', 0],[17.0, 83, 'and', 0],[89.0, 83, 'with', 1],[103.0, 229, '%', 1],[160.0, 86, ',', 2],[193.0, 142, '%', 2]

BN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(47778, 47779)
Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h<missing VAR>-BN engineered van der Waals multiferroic tunnel junction.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, 'D', 2],[357.0, 4, '%', 5],[366.0, 3, '%', 5]

Fe3GeTe2
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(47938, 47942)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, 'D', 1],[194.0, 4, '%', 2],[203.0, 3, '%', 2]

BN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(47950, 47951)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'D', 1],[185.0, 4, '%', 2],[194.0, 3, '%', 2]

CrI3
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(47955, 47957)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, 'D', 1],[179.0, 4, '%', 2],[188.0, 3, '%', 2]

F
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(47960, 47960)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'D', 1],[176.0, 4, '%', 2],[185.0, 3, '%', 2]

BBN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(47966, 47968)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'D', 1],[168.0, 4, '%', 2],[177.0, 3, '%', 2]

I
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(47973, 47973)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2, 'D', 1],[163.0, 4, '%', 2],[172.0, 3, '%', 2]

W
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(47980, 47980)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'D', 1],[156.0, 4, '%', 2],[165.0, 3, '%', 2]

F
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(48020, 48020)
 We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2, 'D', 2],[116.0, 4, '%', 1],[125.0, 3, '%', 1]

BBN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(48026, 48028)
 We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, 'D', 2],[108.0, 4, '%', 1],[117.0, 3, '%', 1]

CrI
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(48032, 48033)
 We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, 'D', 2],[103.0, 4, '%', 1],[112.0, 3, '%', 1]

BBN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(48070, 48072)
 We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 2, 'D', 2],[64.0, 4, '%', 1],[73.0, 3, '%', 1]

CrI3
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(48089, 48091)
 We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 2, 'D', 2],[45.0, 4, '%', 1],[54.0, 3, '%', 1]

BBN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(48306, 48308)
 This work shows that the gianttunneling resistance ratio, multiple resistance states, and excellentspin-polarized transport properties of sliding ferroelectric BBN-based MFTJsindicate its significant potential in nonvolatile memories.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[421.0, 2, 'D', 6],[170.0, 4, '%', 3],[161.0, 3, '%', 3]

Co/Al
###Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions|R. S. Liu,L. Michalak,C. M. Canali,L. Samuelson,H. Pettersson###
(48349, 48351)
Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Au
###Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions|R. S. Liu,L. Michalak,C. M. Canali,L. Samuelson,H. Pettersson###
(48354, 48354)
Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al
###Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions|R. S. Liu,L. Michalak,C. M. Canali,L. Samuelson,H. Pettersson###
(48384, 48386)
 We observe spin-valve-like effects in nano-scaled thermally evaporatedCo/AlOx/Au tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Au
###Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions|R. S. Liu,L. Michalak,C. M. Canali,L. Samuelson,H. Pettersson###
(48389, 48389)
 We observe spin-valve-like effects in nano-scaled thermally evaporatedCo/AlOx/Au tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions|R. S. Liu,L. Michalak,C. M. Canali,L. Samuelson,H. Pettersson###
(48431, 48431)
 The tunneling magnetoresistance is anisotropic anddepends on the relative orientation of the magnetization direction of the Coelectrode with respect to the current direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCoB/MgO/FeCoB
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48572, 48581)
 Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that borondiffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-Oregions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgO
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48598, 48599)
 Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that borondiffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-Oregions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48613, 48613)
 Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that borondiffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-Oregions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48615, 48615)
 Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that borondiffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-Oregions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48617, 48617)
 Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that borondiffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-Oregions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48662, 48662)
 However the crystal structure of the Mg-B-O region remainsunknown.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48664, 48664)
 However the crystal structure of the Mg-B-O region remainsunknown.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48666, 48666)
 However the crystal structure of the Mg-B-O region remainsunknown.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48685, 48685)
 Using density functional techniques, I examine three potential Mg(B)oxides including Mg2B2O5 (monoclinic and triclinic) and theorthorhombic mineral Kotoite (Mg3B2O6).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg(B)
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48693, 48696)
 Using density functional techniques, I examine three potential Mg(B)oxides including Mg2B2O5 (monoclinic and triclinic) and theorthorhombic mineral Kotoite (Mg3B2O6).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg2B2O5
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48703, 48708)
 Using density functional techniques, I examine three potential Mg(B)oxides including Mg2B2O5 (monoclinic and triclinic) and theorthorhombic mineral Kotoite (Mg3B2O6).
Featurization terminated normally.
0,0,0,0,0.2222222222222222,0,0,0.5555555555555556,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Mg3B2O6)
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48729, 48736)
 Using density functional techniques, I examine three potential Mg(B)oxides including Mg2B2O5 (monoclinic and triclinic) and theorthorhombic mineral Kotoite (Mg3B2O6).
Featurization successful!
0,0,0,0,0.18181818181818182,0,0,0.5454545454545454,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48792, 48793)
 The (100) surface of Kotoite has agood lattice match with (001) MgO and could template neighboring FeCo into bcclayers during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48803, 48804)
 The (100) surface of Kotoite has agood lattice match with (001) MgO and could template neighboring FeCo into bcclayers during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48837, 48838)
 Complex band structure analysis of Kotoite shows thatthe C2v<missing VAR> tildeDelta1 band has a much smaller imaginary k<missing VAR> componentthan the C2v<missing VAR> tildeDelta4 band.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48866, 48867)
 Complex band structure analysis of Kotoite shows thatthe C2v<missing VAR> tildeDelta1 band has a much smaller imaginary k<missing VAR> componentthan the C2v<missing VAR> tildeDelta4 band.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48900, 48901)
 Based on symmetry analysis, themajority spin Delta1 band in FeCo should couple well with the KotoitetildeDelta1 band, while the minority FeCo Delta5 will couplepartially with the tildeDelta4 band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(48929, 48930)
 Based on symmetry analysis, themajority spin Delta1 band in FeCo should couple well with the KotoitetildeDelta1 band, while the minority FeCo Delta5 will couplepartially with the tildeDelta4 band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3/BaTiO3/SrRuO3
###Magnetic tunnel junctions with ferroelectric barriers: Prediction of four resistance states from first-principles|Julian P. Velev,Chun-Gang Duan,J. D. Burton,Alexander Smogunov,Manish K. Niranjan,Erio Tosatti,S. S. Jaswal,Evgeny Y. Tsymbal###
(49265, 49278)
 Based onfirst-principles calculations we demonstrate four resistance states inSrRuO3/BaTiO3/SrRuO3 MFTJs with asymmetric interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49423, 49423)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49425, 49426)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49428, 49428)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SB
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49459, 49460)
 We present a computationally efficient transferable single-band tight-bindingmodel (SBT<missing VAR>B) for spin polarized transport in heterostructures with an effort tocapture the band structure effects.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49462, 49462)
 We present a computationally efficient transferable single-band tight-bindingmodel (SBT<missing VAR>B) for spin polarized transport in heterostructures with an effort tocapture the band structure effects.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49497, 49497)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49519, 49519)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49521, 49522)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SB
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49618, 49619)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49621, 49621)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49678, 49679)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49734, 49734)
 Features like I-V characteristics, voltage dependence and thebarrier width dependence of the tunnel magnetoresistance ratio are capturedquantitatively and the trends match well with the ones observed by ab initiomethods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(49736, 49736)
 Features like I-V characteristics, voltage dependence and thebarrier width dependence of the tunnel magnetoresistance ratio are capturedquantitatively and the trends match well with the ones observed by ab initiomethods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Interface Magnetoresistance in Manganite-Titanate Heterojunctions|T. Susaki,N. Nakagawa,H. Y. Hwang###
(49847, 49848)
 We have found that the current- voltage characteristics ofLa0.7Sr0.3MnO3(-delta)/NbSrTiO3 rectifying junctions are quantitativelywell-described by (thermally-assisted) tunneling with an effectivelytemperature-independent Schottky barrier under no magnetic field, while thoseof the oxygen deficient junction remarkably deviate from such a simple behavioras magnetic field is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSrTiO3
###Interface Magnetoresistance in Manganite-Titanate Heterojunctions|T. Susaki,N. Nakagawa,H. Y. Hwang###
(49854, 49858)
 We have found that the current- voltage characteristics ofLa0.7Sr0.3MnO3(-delta)/NbSrTiO3 rectifying junctions are quantitativelywell-described by (thermally-assisted) tunneling with an effectivelytemperature-independent Schottky barrier under no magnetic field, while thoseof the oxygen deficient junction remarkably deviate from such a simple behavioras magnetic field is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb
###Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp###
(50025, 50027)
Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 8.7, '%', 2],[104.0, 14.7, '%', 2],[108.0, 4.2, 'K', 2]

NiMnSb
###Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp###
(50073, 50075)
 We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layersystem consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 8.7, '%', 1],[56.0, 14.7, '%', 1],[60.0, 4.2, 'K', 1]

CoFe
###Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp###
(50084, 50085)
 We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layersystem consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 8.7, '%', 1],[46.0, 14.7, '%', 1],[50.0, 4.2, 'K', 1]

NiMnSb
###Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp###
(50177, 50179)
 A uniaxial in plane anisotropy inthe NiMnSb layer leads to different switching characteristics depending on thedirection in which the magnetic field is applied, an effect which can be usedfor sensor applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 8.7, '%', 2],[46.0, 14.7, '%', 2],[42.0, 4.2, 'K', 2]

In
###Magnetoresistance of the double-tunnel-junction Coulomb Blockade with magnetic metals|Kingshuk Majumdar,Selman Hershfield###
(50390, 50390)
 In all cases the large bias limit can be obtained by adding theresistances of each of the junctions in series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(50777, 50781)
Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D<missing VAR> van der Waals heterojunctions with high spin polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2, 'D', 3],[261.0, 213, '%', 5],[274.0, 72, '%', 5],[278.0, 10, 'K', 5]

Fe3GaTe2
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(50945, 50949)
 Thediscovery of room-temperature intrinsic ferromagnetic 2D crystal Fe3GaTe2 hassolved the problem and greatly facilitated the realization of practicalspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'D', 0],[93.0, 213, '%', 2],[106.0, 72, '%', 2],[110.0, 10, 'K', 2]

Fe3GaTe2/WS2/Fe3GaTe2
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(51002, 51016)
 Here, we demonstrate a room-temperature MTJ based onFe3GaTe2/WS2/Fe3GaTe2 heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[61.0, 2, 'D', 1],[26.0, 213, '%', 1],[39.0, 72, '%', 1],[43.0, 10, 'K', 1]

Fe3GaTe2
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(51073, 51077)
 The tunnelling magnetoresistance (TMR)ratio is up to 213% with high spin polarization of 72% at 10 K, the highestever reported in Fe3GaTe2-based MTJs up to now.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, 'D', 2],[31.0, 213, '%', 0],[18.0, 72, '%', 0],[14.0, 10, 'K', 0]

K
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(51116, 51116)
 The tunnelling spin-valvesignal robustly exists at room temperature (300 K) with bias current down to 10n<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, 'D', 3],[74.0, 213, '%', 1],[61.0, 72, '%', 1],[57.0, 10, 'K', 1]

W
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(51214, 51214)
 Our work sheds light on thepotential application for low-energy consumption all-2D<missing VAR> vdW spintronics andoffers alternative routes for the electronic control of spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 2, 'D', 5],[172.0, 213, '%', 3],[159.0, 72, '%', 3],[155.0, 10, 'K', 3]

C
###Picosecond all-optical switching of magnetic tunnel junctions|Jun-Yang Chen,Li He,Jian-Ping Wang,Mo Li###
(51314, 51314)
 Control of magnetism without using magnetic fields enables large-scaleintegration of spintronic devices for memory, computation and communication inthe beyond-CM<missing VAR>OS era.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 0.6, '%', 5]

OS
###Picosecond all-optical switching of magnetic tunnel junctions|Jun-Yang Chen,Li He,Jian-Ping Wang,Mo Li###
(51316, 51317)
 Control of magnetism without using magnetic fields enables large-scaleintegration of spintronic devices for memory, computation and communication inthe beyond-CM<missing VAR>OS era.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 0.6, '%', 5]

GdFeCo
###Picosecond all-optical switching of magnetic tunnel junctions|Jun-Yang Chen,Li He,Jian-Ping Wang,Mo Li###
(51540, 51542)
 This first optically switchable MTJ uses ferrimagneticGdFeCo as the free layer, and its switching is directly readout by measuringits tunneling magnetoresistance with a DR/R<missing VAR> ratio of 0.6%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 0.6, '%', 0]

NV
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(51753, 51754)
 Emerging non-volatile memories (NVMs) have currently attracted great interestfor their potential applications in advanced low-power information storage andprocessing technologies.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 1000, '%', 4]

NV
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(51799, 51800)
 Conventional NVMs, such as magnetic random accessmemory (MRAM) and resistive random access memory (RRAM) suffer from limitationsof low tunnel magnetoresistance (TMR), low access speed or finite endurance.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 1000, '%', 3]

NV
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(51877, 51878)
NVMs with synergetic advantages are still highly desired for future computerarchitectures.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1000, '%', 2]

Re
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(51964, 51964)
 Here, we report a heterogeneous memristive device composed of amagnetic tunnel junction (MTJ) nanopillar surrounded by resistive siliconswitches, named resistively enhanced MTJ (Re-MTJ), that may be utilized fornovel memristive memories, enabling new functionalities that are inaccessiblefor conventional NVMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1000, '%', 1]

NV
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(52007, 52008)
 Here, we report a heterogeneous memristive device composed of amagnetic tunnel junction (MTJ) nanopillar surrounded by resistive siliconswitches, named resistively enhanced MTJ (Re-MTJ), that may be utilized fornovel memristive memories, enabling new functionalities that are inaccessiblefor conventional NVMs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 1000, '%', 1]

Re
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(52014, 52014)
 The Re-MTJ device features a high ON/OFF ratio of >1000%and multilevel resistance behaviour by combining magnetic switching togetherwith resistive switching mechanisms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1000, '%', 0]

ON/OFF
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(52028, 52033)
 The Re-MTJ device features a high ON/OFF ratio of >1000%and multilevel resistance behaviour by combining magnetic switching togetherwith resistive switching mechanisms.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[7.0, 1000, '%', 0]

CuMnAsGaPCuMnAs
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(52245, 52252)
First-principles spin-transfer torque in CuMnAsGaPCuMnAs junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0.125,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(52353, 52353)
 By using state-of-the-artdensity functional theory combined with quantum transport, we show that theNeel vector of the electrodes can be manipulated by spin-transfer torque.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(52412, 52412)
 At the same time the different magnetization states ofthe junction can be read by standard tunnelling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAsGaPCuMnAs
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(52459, 52466)
 Calculationsare performed for CuMnAsGaPCuMnAs junctions with different surfaceterminations between the anti-ferromagnetic CuMnAs electrodes and theinsulating GaP spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0.125,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(52487, 52489)
 Calculationsare performed for CuMnAsGaPCuMnAs junctions with different surfaceterminations between the anti-ferromagnetic CuMnAs electrodes and theinsulating GaP spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaP
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(52500, 52501)
 Calculationsare performed for CuMnAsGaPCuMnAs junctions with different surfaceterminations between the anti-ferromagnetic CuMnAs electrodes and theinsulating GaP spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(52506, 52506)
 In particular we find that the torque remains staggeredregardless of the termination, while the magnetoresistance depends on themicroscopic details of the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(52860, 52863)
Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 175, '%', 3],[296.0, 8.2, 'x', 5],[304.0, 2, ',', 5],[315.0, 2.9, 'x', 5],[323.0, 2, ',', 5],[353.0, 100, ',', 8]

Si/SiO2
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(52879, 52883)
Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[141.0, 175, '%', 3],[276.0, 8.2, 'x', 5],[284.0, 2, ',', 5],[295.0, 2.9, 'x', 5],[303.0, 2, ',', 5],[333.0, 100, ',', 8]

B2
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(52896, 52897)
 We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy basedmagnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 175, '%', 2],[262.0, 8.2, 'x', 4],[270.0, 2, ',', 4],[281.0, 2.9, 'x', 4],[289.0, 2, ',', 4],[319.0, 100, ',', 7]

Co2FeAl
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(52901, 52904)
 We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy basedmagnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 175, '%', 2],[255.0, 8.2, 'x', 4],[263.0, 2, ',', 4],[274.0, 2.9, 'x', 4],[282.0, 2, ',', 4],[312.0, 100, ',', 7]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(52907, 52908)
 We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy basedmagnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 175, '%', 2],[251.0, 8.2, 'x', 4],[259.0, 2, ',', 4],[270.0, 2.9, 'x', 4],[278.0, 2, ',', 4],[308.0, 100, ',', 7]

Si/SiO2
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(52939, 52943)
 We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy basedmagnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[81.0, 175, '%', 2],[216.0, 8.2, 'x', 4],[224.0, 2, ',', 4],[235.0, 2.9, 'x', 4],[243.0, 2, ',', 4],[273.0, 100, ',', 7]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(52953, 52954)
Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and aflat surface were achieved using a MgO buffer layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 175, '%', 1],[205.0, 8.2, 'x', 3],[213.0, 2, ',', 3],[224.0, 2.9, 'x', 3],[232.0, 2, ',', 3],[262.0, 100, ',', 6]

B2
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(52974, 52975)
Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and aflat surface were achieved using a MgO buffer layer.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 175, '%', 1],[184.0, 8.2, 'x', 3],[192.0, 2, ',', 3],[203.0, 2.9, 'x', 3],[211.0, 2, ',', 3],[241.0, 100, ',', 6]

MgO
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(52997, 52998)
Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and aflat surface were achieved using a MgO buffer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 175, '%', 1],[161.0, 8.2, 'x', 3],[169.0, 2, ',', 3],[180.0, 2.9, 'x', 3],[188.0, 2, ',', 3],[218.0, 100, ',', 6]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(53043, 53044)
 A tunnel magnetoresistance(TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure ona 7.5-nm-thick MgO buffer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 175, '%', 0],[115.0, 8.2, 'x', 2],[123.0, 2, ',', 2],[134.0, 2.9, 'x', 2],[142.0, 2, ',', 2],[172.0, 100, ',', 5]

MgO/CoFe
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(53047, 53051)
 A tunnel magnetoresistance(TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure ona 7.5-nm-thick MgO buffer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[23.0, 175, '%', 0],[108.0, 8.2, 'x', 2],[116.0, 2, ',', 2],[127.0, 2.9, 'x', 2],[135.0, 2, ',', 2],[165.0, 100, ',', 5]

MgO
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(53066, 53067)
 A tunnel magnetoresistance(TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure ona 7.5-nm-thick MgO buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 175, '%', 0],[92.0, 8.2, 'x', 2],[100.0, 2, ',', 2],[111.0, 2.9, 'x', 2],[119.0, 2, ',', 2],[149.0, 100, ',', 5]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(53109, 53110)
 Spin-transfer torque induced magnetization switchingwas achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as aswitching layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 175, '%', 1],[49.0, 8.2, 'x', 1],[57.0, 2, ',', 1],[68.0, 2.9, 'x', 1],[76.0, 2, ',', 1],[106.0, 100, ',', 4]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(53197, 53198)
 Using a thermal activation model, the intrinsic criticalcurrent density (Jc0) was determined to be 8.2 x 106 A/cm2, which is lowerthan 2.9 x 107 A/cm2, the value for epitaxial CFA-MTJs [Appl.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 175, '%', 2],[38.0, 8.2, 'x', 0],[30.0, 2, ',', 0],[19.0, 2.9, 'x', 0],[11.0, 2, ',', 0],[18.0, 100, ',', 3]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(53258, 53259)
 We found that the Gilbert damping constant evaluated usingferromagnetic resonance measurements for the polycrystalline CFA film was0.015 and was almost independent of the CFA thickness (218 nm).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 175, '%', 6],[99.0, 8.2, 'x', 4],[91.0, 2, ',', 4],[80.0, 2.9, 'x', 4],[72.0, 2, ',', 4],[42.0, 100, ',', 1]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(53281, 53282)
 We found that the Gilbert damping constant evaluated usingferromagnetic resonance measurements for the polycrystalline CFA film was0.015 and was almost independent of the CFA thickness (218 nm).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 175, '%', 6],[122.0, 8.2, 'x', 4],[114.0, 2, ',', 4],[103.0, 2.9, 'x', 4],[95.0, 2, ',', 4],[65.0, 100, ',', 1]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(53331, 53332)
 The low Jc0for the polycrystalline MTJ was mainly attributed to the low damping of the CFAlayer compared with the value in the epitaxial one (0.04).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 175, '%', 7],[172.0, 8.2, 'x', 5],[164.0, 2, ',', 5],[153.0, 2.9, 'x', 5],[145.0, 2, ',', 5],[115.0, 100, ',', 2]

W
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(53464, 53464)
 Here we report novelmultiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals(vdW) heterostructures in which atomically thin chromium triiodide (CrI3) actsas a spin-filter tunnel barrier sandwiched between graphene contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 19, ',', 1],[86.0, 0, '%', 1]

(CrI3)
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(53481, 53485)
 Here we report novelmultiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals(vdW) heterostructures in which atomically thin chromium triiodide (CrI3) actsas a spin-filter tunnel barrier sandwiched between graphene contacts.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 19, ',', 1],[65.0, 0, '%', 1]

CrI3
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(53533, 53535)
 Wedemonstrate tunneling magnetoresistance which is drastically enhanced withincreasing CrI3 layer thickness, reaching a record 19,000% for magneticmultilayer structures using four-layer sf-MTJs at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 19, ',', 0],[15.0, 0, '%', 0]

W
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(53631, 53631)
 Thesedevices also show multiple resistance states as a function of magnetic field,suggesting the potential for multi-bit functionalities using an individual vdWsf-MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 19, ',', 1],[81.0, 0, '%', 1]

CrI3
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(53686, 53688)
 Using magnetic circular dichroism measurements, we attribute theseeffects to the intrinsic layer-by-layer antiferromagnetic ordering of theatomically thin CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 19, ',', 2],[136.0, 0, '%', 2]

CrI3
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(53727, 53729)
 Our work reveals the possibility to push magneticinformation storage to the atomically thin limit, and highlights CrI3 as asuperlative magnetic tunnel barrier for vdW heterostructure spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 19, ',', 3],[177.0, 0, '%', 3]

W
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(53747, 53747)
 Our work reveals the possibility to push magneticinformation storage to the atomically thin limit, and highlights CrI3 as asuperlative magnetic tunnel barrier for vdW heterostructure spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 19, ',', 3],[197.0, 0, '%', 3]

I
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(54347, 54347)
 The influence on the I-V characteristics and tunnel magnetoresistance (TMR),of impurities embedded into the insulating barrier I separating the twoferromagnetic electrodes F of a magnetic tunnel junction, was theoreticallyinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(54349, 54349)
 The influence on the I-V characteristics and tunnel magnetoresistance (TMR),of impurities embedded into the insulating barrier I separating the twoferromagnetic electrodes F of a magnetic tunnel junction, was theoreticallyinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(54381, 54381)
 The influence on the I-V characteristics and tunnel magnetoresistance (TMR),of impurities embedded into the insulating barrier I separating the twoferromagnetic electrodes F of a magnetic tunnel junction, was theoreticallyinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(54394, 54394)
 The influence on the I-V characteristics and tunnel magnetoresistance (TMR),of impurities embedded into the insulating barrier I separating the twoferromagnetic electrodes F of a magnetic tunnel junction, was theoreticallyinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/I
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(54534, 54536)
 closer to one of the interfacesF/I, the I-V characteristic exhibits a quasidiode behavior.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(54541, 54541)
 closer to one of the interfacesF/I, the I-V characteristic exhibits a quasidiode behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(54543, 54543)
 closer to one of the interfacesF/I, the I-V characteristic exhibits a quasidiode behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(54628, 54628)
Non-equilibrium Greens<missing VAR> function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(54630, 54631)
Non-equilibrium Greens<missing VAR> function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(54633, 54633)
Non-equilibrium Greens<missing VAR> function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(54669, 54669)
 Motivated by observation of very high tunnel magnetoresistance (TMR) inFe-MgO-Fe magnetic tunnel junction devices, we propose a theoretical model forthese devices based on a single-band tight-binding approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(54671, 54672)
 Motivated by observation of very high tunnel magnetoresistance (TMR) inFe-MgO-Fe magnetic tunnel junction devices, we propose a theoretical model forthese devices based on a single-band tight-binding approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(54674, 54674)
 Motivated by observation of very high tunnel magnetoresistance (TMR) inFe-MgO-Fe magnetic tunnel junction devices, we propose a theoretical model forthese devices based on a single-band tight-binding approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(54754, 54754)
 In the transport direction, spin dependent Hamiltonian isprescribed for Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(54952, 54953)
 We have performed a systematic analysis of the low frequency 1/f<missing VAR>-noise insingle grain boundary junctions in the colossal magnetoresistance materialLa2/3Ca1/3MnO3-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 300, '%', 1],[83.0, 4.2, 'K', 1],[234.0, 4.2, 'K', 4]

Ca1
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(54956, 54957)
 We have performed a systematic analysis of the low frequency 1/f<missing VAR>-noise insingle grain boundary junctions in the colossal magnetoresistance materialLa2/3Ca1/3MnO3-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 300, '%', 1],[79.0, 4.2, 'K', 1],[230.0, 4.2, 'K', 4]

MnO3
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(54960, 54962)
 We have performed a systematic analysis of the low frequency 1/f<missing VAR>-noise insingle grain boundary junctions in the colossal magnetoresistance materialLa2/3Ca1/3MnO3-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 300, '%', 1],[74.0, 4.2, 'K', 1],[225.0, 4.2, 'K', 4]

La2
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(54984, 54985)
 The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 300, '%', 0],[51.0, 4.2, 'K', 0],[202.0, 4.2, 'K', 3]

Ca1
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(54988, 54989)
 The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 300, '%', 0],[47.0, 4.2, 'K', 0],[198.0, 4.2, 'K', 3]

MnO3
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(54992, 54994)
 The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 300, '%', 0],[42.0, 4.2, 'K', 0],[193.0, 4.2, 'K', 3]

SrTiO3
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(55004, 55007)
 The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 300, '%', 0],[29.0, 4.2, 'K', 0],[180.0, 4.2, 'K', 3]

C
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(55075, 55075)
 Below the Curie temperature T<missing VAR>C the measured 1/f<missing VAR> noise is dominated bythe grain boundary.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 300, '%', 1],[39.0, 4.2, 'K', 1],[112.0, 4.2, 'K', 2]

At
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(55186, 55186)
 At 4.2 K additional temporallyunstable Lorentzian components show up in the noise spectra that are mostlikely caused by fluctuating clusters of interacting magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 300, '%', 3],[150.0, 4.2, 'K', 3],[1.0, 4.2, 'K', 0]

Ta/FeCoB/MgO/FeCoB
###Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction|Murat Cubukcu,Olivier Boulle,Marc Drouard,Kevin Garello,Can Onur Avci,Ioan Mihai Miron,Juergen Langer,Berthold Ocker,Pietro Gambardella,Gilles Gaudin###
(55390, 55401)
 The device is composed ofa perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ta
###Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction|Murat Cubukcu,Olivier Boulle,Marc Drouard,Kevin Garello,Can Onur Avci,Ioan Mihai Miron,Juergen Langer,Berthold Ocker,Pietro Gambardella,Gilles Gaudin###
(55413, 55413)
 The device is composed ofa perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCoB
###Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction|Murat Cubukcu,Olivier Boulle,Marc Drouard,Kevin Garello,Can Onur Avci,Ioan Mihai Miron,Juergen Langer,Berthold Ocker,Pietro Gambardella,Gilles Gaudin###
(55431, 55433)
 Themagnetization of the bottom FeCoB layer can be switched reproducibly by theinjection of current pulses with density 5times1011 A/m<missing VAR>2 in the Talayer in the presence of an in-plane bias magnetic field, leading to thefull-scale change of the TMR signal.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction|Murat Cubukcu,Olivier Boulle,Marc Drouard,Kevin Garello,Can Onur Avci,Ioan Mihai Miron,Juergen Langer,Berthold Ocker,Pietro Gambardella,Gilles Gaudin###
(55476, 55476)
 Themagnetization of the bottom FeCoB layer can be switched reproducibly by theinjection of current pulses with density 5times1011 A/m<missing VAR>2 in the Talayer in the presence of an in-plane bias magnetic field, leading to thefull-scale change of the TMR signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(55641, 55641)
 We have developed and optimized two categories of spin transfer torquemagnetic tunnel junctions (STT-MTJs) that exhibit a high tunnelmagnetoresistance (TMR) ratio, low critical current, high outputpower in themicro watt range, and auto-oscillation behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, 'CoFeB', 2],[198.0, 2, 'CoFeB', 2]

S
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(55717, 55717)
 These characteristicsdemonstrate the potential of STT-MTJs for low-power, high-speed, and reliablespintronic applications, including magnetic memory, logic, and signalprocessing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, 'CoFeB', 1],[122.0, 2, 'CoFeB', 1]

B
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(55795, 55795)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'CoFeB', 0],[44.0, 2, 'CoFeB', 0]

Ta
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(55821, 55821)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'CoFeB', 0],[18.0, 2, 'CoFeB', 0]

CoFeSiB
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(55825, 55828)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'CoFeB', 0],[11.0, 2, 'CoFeB', 0]

Ta
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(55843, 55843)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 2, 'CoFeB', 0],[4.0, 2, 'CoFeB', 0]

NiFe
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(55847, 55848)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'CoFeB', 0],[8.0, 2, 'CoFeB', 0]

B
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(55852, 55852)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, 'CoFeB', 0],[13.0, 2, 'CoFeB', 0]

B
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(55868, 55868)
 Our studyreveals that B-MTJs exhibit lower critical currents for auto-oscillation thanA-MTJs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'CoFeB', 1],[29.0, 2, 'CoFeB', 1]

B
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(55965, 55965)
 We found that both stacks have comparable saturation magnetization andanisotropy field, suggesting that the difference in auto-oscillation behavioris due to the higher damping of A-MTJs compared to B-MTJs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 2, 'CoFeB', 2],[126.0, 2, 'CoFeB', 2]

OK
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(56009, 56010)
 To verify thishypothesis, we employed the all-optical time-resolved magneto-optical Kerreffect (TRMOKE) technique, which confirmed that STT-MTJs with lower dampingexhibited auto-oscillation at lower critical current values.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 2, 'CoFeB', 3],[170.0, 2, 'CoFeB', 3]

S
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(56023, 56023)
 To verify thishypothesis, we employed the all-optical time-resolved magneto-optical Kerreffect (TRMOKE) technique, which confirmed that STT-MTJs with lower dampingexhibited auto-oscillation at lower critical current values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 2, 'CoFeB', 3],[184.0, 2, 'CoFeB', 3]

S
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(56071, 56071)
 Additionally, ourstudy aimed to optimize the STT-MTJ performance by investigating the impact ofthe capping layer on the devices<missing VAR> response to electronic and optical stimuli.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 2, 'CoFeB', 4],[232.0, 2, 'CoFeB', 4]

(MnAs)
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(56239, 56242)
This is indicated by a large tunneling magnetoresistance (up to 30%) at lowtemperatures in epitaxial magnetic tunnel junctions composed of a ferromagneticmetal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by anonmagnetic semiconductor (AlAs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 30, '%', 0]

(GaMnAs)
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(56252, 56256)
This is indicated by a large tunneling magnetoresistance (up to 30%) at lowtemperatures in epitaxial magnetic tunnel junctions composed of a ferromagneticmetal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by anonmagnetic semiconductor (AlAs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 30, '%', 0]

(AlAs)
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(56269, 56272)
This is indicated by a large tunneling magnetoresistance (up to 30%) at lowtemperatures in epitaxial magnetic tunnel junctions composed of a ferromagneticmetal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by anonmagnetic semiconductor (AlAs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 30, '%', 0]

V1
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(56333, 56334)
 The low temperature conductance-voltage characteristics show a zerobias anomaly and a V1/2 dependence of the conductance, indicating acorrelation gap in the density of states of GaMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 30, '%', 2]

GaMnAs
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(56368, 56370)
 The low temperature conductance-voltage characteristics show a zerobias anomaly and a V1/2 dependence of the conductance, indicating acorrelation gap in the density of states of GaMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 30, '%', 2]

MnAs/AlAs
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(56382, 56386)
 These experiments suggestthat MnAs/AlAs heterostructures offer well characterized tunnel junctions forhigh efficiency spin injection into GaAs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[175.0, 30, '%', 3]

GaAs
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(56413, 56414)
 These experiments suggestthat MnAs/AlAs heterostructures offer well characterized tunnel junctions forhigh efficiency spin injection into GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 30, '%', 3]

N
###Universal angular magnetoresistance and spin torque in ferromagnetic/normal metal hybrids|Gerrit E. W. Bauer,Yaroslav Tserkovnyak,Daniel Huertas-Hernando,Arne Brataas###
(56465, 56465)
 The electrical resistance of ferromagnetic/normal-metal (F/N)heterostructures depends on the nature of the junctions which may be tunnelbarriers, point contacts, or intermetallic interfaces.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/N/F
###Universal angular magnetoresistance and spin torque in ferromagnetic/normal metal hybrids|Gerrit E. W. Bauer,Yaroslav Tserkovnyak,Daniel Huertas-Hernando,Arne Brataas###
(56527, 56531)
 For all junction types,the resistance of disordered F/N/F perpendicular spin valves as a function ofthe angle between magnetization vectors is shown to obey a simple universallaw.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Lin-Xiu Ye,Niazbeck Useinov,Te-Ho Wu,Chih-Huang Lai###
(56888, 56888)
 The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) withembedded nanoparticles (NPs) was calculated in range of the quantum-ballisticmodel.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Lin-Xiu Ye,Niazbeck Useinov,Te-Ho Wu,Chih-Huang Lai###
(56945, 56945)
 The simulation was performed for electron tunneling through theinsulating layer with embedded magnetic and nonmagnetic NPs within the approachof the double barrier subsystem connected in parallel to the single barrierone.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Lin-Xiu Ye,Niazbeck Useinov,Te-Ho Wu,Chih-Huang Lai###
(57043, 57043)
 We also calculated the in-plane component of the spintransfer torque (STT) versus the applied voltage in MTJs with magnetic NPs anddetermined that its value can be much larger than in single barrier system(SBS) for the same tunneling thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Lin-Xiu Ye,Niazbeck Useinov,Te-Ho Wu,Chih-Huang Lai###
(57066, 57066)
 We also calculated the in-plane component of the spintransfer torque (STT) versus the applied voltage in MTJs with magnetic NPs anddetermined that its value can be much larger than in single barrier system(SBS) for the same tunneling thickness.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SBS)
###Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Lin-Xiu Ye,Niazbeck Useinov,Te-Ho Wu,Chih-Huang Lai###
(57099, 57103)
 We also calculated the in-plane component of the spintransfer torque (STT) versus the applied voltage in MTJs with magnetic NPs anddetermined that its value can be much larger than in single barrier system(SBS) for the same tunneling thickness.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Influence of Roughness and Disorder on Tunneling Magnetoresistance|P. X. Xu,V. M. Karpan,K. Xia,M. Zwierzycki,I. Marushchenko,P. J. Kelly###
(57414, 57415)
 A systematic, quantitative study of the effect of interface roughness anddisorder on the magnetoresistance of FeCovacuumFeCo magnetic tunneljunctions is presented based upon parameter-free electronic structurecalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Influence of Roughness and Disorder on Tunneling Magnetoresistance|P. X. Xu,V. M. Karpan,K. Xia,M. Zwierzycki,I. Marushchenko,P. J. Kelly###
(57417, 57418)
 A systematic, quantitative study of the effect of interface roughness anddisorder on the magnetoresistance of FeCovacuumFeCo magnetic tunneljunctions is presented based upon parameter-free electronic structurecalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunneling anisotropic magnetoresistance in single-molecule magnet junctions|Haiqing Xie,Qiang Wang,Hujun Jiao,J. -Q. Liang###
(57592, 57592)
 We theoretically investigate quantum transport through single-molecule magnet(SMM) junctions with ferromagnetic and normal-metal leads in the sequentialregime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunneling anisotropic magnetoresistance in single-molecule magnet junctions|Haiqing Xie,Qiang Wang,Hujun Jiao,J. -Q. Liang###
(57698, 57698)
 The current obtained by means of the rate-equation gives rise to thetunneling anisotropic magnetoresistance (TAMR), which varies with the anglebetween the magnetization direction of ferromagnetic lead and the easy axis ofSMM.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunneling anisotropic magnetoresistance in single-molecule magnet junctions|Haiqing Xie,Qiang Wang,Hujun Jiao,J. -Q. Liang###
(57741, 57741)
 The angular dependence of TAMR can serve as a probe to determineexperimentally the easy axis of SMM.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy|Robert Werner,Mathias Weiler,Aleksandr Yu. Petrov,Bruce A. Davidson,Rudolf Gross,Reinhold Kleiner,Sebastian T. B. Goennenwein,Dieter Koelle###
(57878, 57878)
 Tunneling magnetoresistance (TMR) in a vertical manganite junction wasinvestigated by low-temperature scanning laser microscopy (LTSLM) allowing todetermine the local relative magnetization M<missing VAR> orientation of the two electrodesas a function of magnitude and orientation of the external magnetic field H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy|Robert Werner,Mathias Weiler,Aleksandr Yu. Petrov,Bruce A. Davidson,Rudolf Gross,Reinhold Kleiner,Sebastian T. B. Goennenwein,Dieter Koelle###
(57935, 57935)
 Tunneling magnetoresistance (TMR) in a vertical manganite junction wasinvestigated by low-temperature scanning laser microscopy (LTSLM) allowing todetermine the local relative magnetization M<missing VAR> orientation of the two electrodesas a function of magnitude and orientation of the external magnetic field H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy|Robert Werner,Mathias Weiler,Aleksandr Yu. Petrov,Bruce A. Davidson,Rudolf Gross,Reinhold Kleiner,Sebastian T. B. Goennenwein,Dieter Koelle###
(58041, 58043)
 Calculated resistance R<missing VAR>mathrmcalc(H) based on thelocal M<missing VAR> configuration obtained by LTSLM is in quantitative agreement with R<missing VAR>(H)measured by magnetotransport.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy|Robert Werner,Mathias Weiler,Aleksandr Yu. Petrov,Bruce A. Davidson,Rudolf Gross,Reinhold Kleiner,Sebastian T. B. Goennenwein,Dieter Koelle###
(58064, 58064)
 Calculated resistance R<missing VAR>mathrmcalc(H) based on thelocal M<missing VAR> configuration obtained by LTSLM is in quantitative agreement with R<missing VAR>(H)measured by magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy|Robert Werner,Mathias Weiler,Aleksandr Yu. Petrov,Bruce A. Davidson,Rudolf Gross,Reinhold Kleiner,Sebastian T. B. Goennenwein,Dieter Koelle###
(58079, 58081)
 Calculated resistance R<missing VAR>mathrmcalc(H) based on thelocal M<missing VAR> configuration obtained by LTSLM is in quantitative agreement with R<missing VAR>(H)measured by magnetotransport.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58113, 58119)
Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) junctions Comparative study with Fe/MgO/Fe(001) junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58134, 58137)
Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) junctions Comparative study with Fe/MgO/Fe(001) junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58172, 58178)
 We investigate bias voltage effects on the spin-dependent transportproperties of Fe/MgAl2O4/Fe(001) magnetic tunneling junctions (MTJs)by comparing them with those of Fe/MgO/Fe(001) MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58210, 58213)
 We investigate bias voltage effects on the spin-dependent transportproperties of Fe/MgAl2O4/Fe(001) magnetic tunneling junctions (MTJs)by comparing them with those of Fe/MgO/Fe(001) MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

V
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58341, 58341)
 We find that in both the MTJs, the MR ratio decreases as the bias voltageincreases and finally vanishes at a critical bias voltage Vrm c<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58364, 58364)
 We alsofind that the critical bias voltage Vrm c<missing VAR> of the MgAl2O4-basedMTJ is clearly larger than that of the MgO-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58373, 58377)
 We alsofind that the critical bias voltage Vrm c<missing VAR> of the MgAl2O4-basedMTJ is clearly larger than that of the MgO-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58400, 58401)
 We alsofind that the critical bias voltage Vrm c<missing VAR> of the MgAl2O4-basedMTJ is clearly larger than that of the MgO-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58427, 58433)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58453, 58456)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58468, 58468)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58476, 58480)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58511, 58511)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58522, 58523)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58569, 58569)
 We show that such a difference in the Fe band structure is the originof the difference in the critical bias voltage Vrm c<missing VAR> between theMgAl2O4- and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58598, 58598)
 We show that such a difference in the Fe band structure is the originof the difference in the critical bias voltage Vrm c<missing VAR> between theMgAl2O4- and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58608, 58612)
 We show that such a difference in the Fe band structure is the originof the difference in the critical bias voltage Vrm c<missing VAR> between theMgAl2O4- and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(58617, 58618)
 We show that such a difference in the Fe band structure is the originof the difference in the critical bias voltage Vrm c<missing VAR> between theMgAl2O4- and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3
###Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy|Robert Werner,Alexandr Yu. Petrov,Lucero Alvarez Mino,Reinhold Kleiner,Dieter Koelle,Bruce A. Davidson###
(58683, 58702)
 We report resistance versus magnetic field measurements for aLa0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown bymolecular-beam epitaxy, that show a large field window of extremely hightunneling magnetoresistance (TMR) at low temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[137.0, 1900, '%', 3],[141.0, 4, 'K', 3],[161.0, 95, '%', 3]

S
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(58995, 58995)
 We consider a new type of magnetic tunnel junction, which consists of twoferromagnetic tunnel barriers acting as spin filters (SFs), separated by anonmagnetic metal (NM) layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 99, '%', 3]

N
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(59012, 59012)
 We consider a new type of magnetic tunnel junction, which consists of twoferromagnetic tunnel barriers acting as spin filters (SFs), separated by anonmagnetic metal (NM) layer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 99, '%', 3]

N
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(59072, 59072)
 Using the transfer matrix method and thefree-electron approximation, the dependence of the tunnel magnetoresistance(TMR) on the thickness of the central NM<missing VAR> layer, bias voltage and temperature inthe double SF junction are studied theoretically.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 99, '%', 2]

SF
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(59093, 59094)
 Using the transfer matrix method and thefree-electron approximation, the dependence of the tunnel magnetoresistance(TMR) on the thickness of the central NM<missing VAR> layer, bias voltage and temperature inthe double SF junction are studied theoretically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 99, '%', 2]

N
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(59195, 59195)
 By anappropriate choice of the thickness of the central NM<missing VAR> layer, the degree of spinpolarization in this structure will be higher than that of the single SFjunctions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 99, '%', 1]

SF
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(59234, 59235)
 By anappropriate choice of the thickness of the central NM<missing VAR> layer, the degree of spinpolarization in this structure will be higher than that of the single SFjunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 99, '%', 1]

In
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59281, 59281)
Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM<missing VAR> Cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[506.0, 57.6, '%', 10]

S
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59301, 59301)
Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM<missing VAR> Cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[486.0, 57.6, '%', 10]

In
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59313, 59313)
 In-memory computing (IM<missing VAR>C) is an effectual solution for energy-efficientartificial intelligence applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[474.0, 57.6, '%', 9]

I
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59320, 59320)
 In-memory computing (IM<missing VAR>C) is an effectual solution for energy-efficientartificial intelligence applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[467.0, 57.6, '%', 9]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59322, 59322)
 In-memory computing (IM<missing VAR>C) is an effectual solution for energy-efficientartificial intelligence applications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[465.0, 57.6, '%', 9]

I
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59349, 59349)
 Analog IM<missing VAR>C amortizes the powerconsumption of multiple sensing amplifiers with analog-to-digital converter(AD<missing VAR>C), and simultaneously completes the calculation of multi-line data withhigh parallelism degree.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 57.6, '%', 8]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59351, 59351)
 Analog IM<missing VAR>C amortizes the powerconsumption of multiple sensing amplifiers with analog-to-digital converter(AD<missing VAR>C), and simultaneously completes the calculation of multi-line data withhigh parallelism degree.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 57.6, '%', 8]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59384, 59384)
 Analog IM<missing VAR>C amortizes the powerconsumption of multiple sensing amplifiers with analog-to-digital converter(AD<missing VAR>C), and simultaneously completes the calculation of multi-line data withhigh parallelism degree.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 57.6, '%', 8]

S
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59456, 59456)
 Based on a universal one-transistor one-magnetictunnel junction (MTJ) spin transfer torque magnetic RAM (STT-MRAM) cell, thispaper demonstrates a novel tunneling magnetoresistance (TMR) ratio magnifyingmethod to realize analog IM<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 57.6, '%', 7]

I
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59503, 59503)
 Based on a universal one-transistor one-magnetictunnel junction (MTJ) spin transfer torque magnetic RAM (STT-MRAM) cell, thispaper demonstrates a novel tunneling magnetoresistance (TMR) ratio magnifyingmethod to realize analog IM<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 57.6, '%', 7]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59505, 59505)
 Based on a universal one-transistor one-magnetictunnel junction (MTJ) spin transfer torque magnetic RAM (STT-MRAM) cell, thispaper demonstrates a novel tunneling magnetoresistance (TMR) ratio magnifyingmethod to realize analog IM<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 57.6, '%', 7]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59642, 59642)
 The proposeddesign maximumly supports 1024 2-bit input and 1-bit weightmultiply-and-accumulate (M<missing VAR>AC) computations simultaneously.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 57.6, '%', 3]

(IN)
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59675, 59678)
 The 2-bit input isrepresented by the width of the input (IN) pulses, while the 1-bit weight isstored in STT-MRAM<missing VAR> and the x<missing VAR>7500 magnified TMR (m-TMR) ratio is obtained bylatching.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 57.6, '%', 2]

S
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59700, 59700)
 The 2-bit input isrepresented by the width of the input (IN) pulses, while the 1-bit weight isstored in STT-MRAM<missing VAR> and the x<missing VAR>7500 magnified TMR (m-TMR) ratio is obtained bylatching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 57.6, '%', 2]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59756, 59756)
 The proposal is simulated using 28-nm CM<missing VAR>OS process and MTJ compactmodel.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 57.6, '%', 1]

OS
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59758, 59759)
 The proposal is simulated using 28-nm CM<missing VAR>OS process and MTJ compactmodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 57.6, '%', 1]

OPS/W
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59807, 59811)
 9.47-25.4 T<missing VAR>OPS/W is realized with 2-bit input, 1-bitweight and 4-bit output convolution neural network (CNN).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 57.6, '%', 1]

(CNN)
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(59847, 59851)
 9.47-25.4 T<missing VAR>OPS/W is realized with 2-bit input, 1-bitweight and 4-bit output convolution neural network (CNN).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 57.6, '%', 1]

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(59863, 59863)
R<missing VAR>F amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(59873, 59874)
R<missing VAR>F amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(59903, 59903)
 The radio-frequency (R<missing VAR>F) voltage amplification property of a tunnelmagnetoresistance device driven by an R<missing VAR>F external-magnetic-field-inducedferromagnetic resonance was studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(59930, 59930)
 The radio-frequency (R<missing VAR>F) voltage amplification property of a tunnelmagnetoresistance device driven by an R<missing VAR>F external-magnetic-field-inducedferromagnetic resonance was studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(59994, 59994)
 Theinput R<missing VAR>F voltage applied to the waveguide can excite the resonant dynamics inthe free layer magnetization, leading to the generation of an output R<missing VAR>F voltageunder a D<missing VAR>C bias current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(60043, 60043)
 Theinput R<missing VAR>F voltage applied to the waveguide can excite the resonant dynamics inthe free layer magnetization, leading to the generation of an output R<missing VAR>F voltageunder a D<missing VAR>C bias current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(60053, 60053)
 Theinput R<missing VAR>F voltage applied to the waveguide can excite the resonant dynamics inthe free layer magnetization, leading to the generation of an output R<missing VAR>F voltageunder a D<missing VAR>C bias current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(60069, 60069)
 The dependences of the R<missing VAR>F voltage gain on the staticexternal magnetic field strength and angle were systematically investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/MgO
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(60190, 60193)
 We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[47.0, 2000, '%', 1]

Ni/MgO
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(60202, 60205)
 We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[35.0, 2000, '%', 1]

Co
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(60215, 60215)
 The Co-basedjunction is shown to have a TMR ratio over 2000%, which is one order higherthan that of the Ni-based one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2000, '%', 0]

Ni
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(60263, 60263)
 The Co-basedjunction is shown to have a TMR ratio over 2000%, which is one order higherthan that of the Ni-based one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2000, '%', 0]

Fe(Co)/MgO
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(60386, 60392)
 This differs essentially from theconventional coherent tunneling mechanism of high TMR ratios inFe(Co)/MgO/Fe(Co)(001).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[146.0, 2000, '%', 2]

Fe(Co)
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(60394, 60397)
 This differs essentially from theconventional coherent tunneling mechanism of high TMR ratios inFe(Co)/MgO/Fe(Co)(001).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 2000, '%', 2]

La2
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(60463, 60464)
 We have studied the magnetoresistance (TMR) of tunnel junctions withelectrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductanceand TMR with the bias voltage can be exploited to obtain a precise informationon the spin and energy dependence of the density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(60467, 60468)
 We have studied the magnetoresistance (TMR) of tunnel junctions withelectrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductanceand TMR with the bias voltage can be exploited to obtain a precise informationon the spin and energy dependence of the density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(60471, 60473)
 We have studied the magnetoresistance (TMR) of tunnel junctions withelectrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductanceand TMR with the bias voltage can be exploited to obtain a precise informationon the spin and energy dependence of the density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(60573, 60574)
 Our analysis leadsto a quantitative description of the band structure of La2/3Sr1/3MnO3 andallows the determination of the gap delta between the Fermi level and thebottom of the t2g minority spin band, in good agreement with data fromspin-polarized inverse photoemission experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(60577, 60578)
 Our analysis leadsto a quantitative description of the band structure of La2/3Sr1/3MnO3 andallows the determination of the gap delta between the Fermi level and thebottom of the t2g minority spin band, in good agreement with data fromspin-polarized inverse photoemission experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(60581, 60583)
 Our analysis leadsto a quantitative description of the band structure of La2/3Sr1/3MnO3 andallows the determination of the gap delta between the Fermi level and thebottom of the t2g minority spin band, in good agreement with data fromspin-polarized inverse photoemission experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrCrMn
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60701, 60703)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 1300, 'K', 3]

Al
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60708, 60708)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 1300, 'K', 3]

Ga
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60711, 60711)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 1300, 'K', 3]

Si
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60714, 60714)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 1300, 'K', 3]

Ge
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60717, 60717)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 1300, 'K', 3]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60732, 60733)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 1300, 'K', 3]

IrCrMn
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60756, 60758)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1300, 'K', 2]

Al
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60763, 60763)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1300, 'K', 2]

Ga
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60766, 60766)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1300, 'K', 2]

Si
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60769, 60769)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1300, 'K', 2]

Ge
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60772, 60772)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 1300, 'K', 2]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60809, 60810)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1300, 'K', 2]

IrCrMnAl
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60879, 60882)
 TheCurie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) aspredicted from mean-field-approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1300, 'K', 0]

IrCrMnGa
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60886, 60889)
 TheCurie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) aspredicted from mean-field-approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1300, 'K', 0]

IrCrMn
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60992, 60994)
 Further,we investigate the electronic structure of IrCrMnZ<missing VAR>/MgO heterojunction along(001) direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1300, 'K', 3]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(60997, 60998)
 Further,we investigate the electronic structure of IrCrMnZ<missing VAR>/MgO heterojunction along(001) direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1300, 'K', 3]

IrCrMnAl/MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(61012, 61018)
 IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity evenat the MgO interface, with no interfacial states at/around Fermi level in theminority-spin channel.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[113.0, 1300, 'K', 4]

IrCrMnGa/MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(61022, 61028)
 IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity evenat the MgO interface, with no interfacial states at/around Fermi level in theminority-spin channel.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[123.0, 1300, 'K', 4]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(61043, 61044)
 IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity evenat the MgO interface, with no interfacial states at/around Fermi level in theminority-spin channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1300, 'K', 4]

IrCrMnAl/MgO/IrCrMnAl
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(61087, 61098)
 Large majority-spin conductance of IrCrMnAl/MgO/IrCrMnAland IrCrMnGa/MgO/IrCrMnGa is reported from the calculation of ballisticspin-transport property for parallel magnetization configuration.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[188.0, 1300, 'K', 5]

IrCrMnGa/MgO/IrCrMnGa
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(61103, 61114)
 Large majority-spin conductance of IrCrMnAl/MgO/IrCrMnAland IrCrMnGa/MgO/IrCrMnGa is reported from the calculation of ballisticspin-transport property for parallel magnetization configuration.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[204.0, 1300, 'K', 5]

IrCrMnAl/MgO/IrCrMnAl
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(61151, 61162)
 We proposeIrCrMnAl/MgO/IrCrMnAl and IrCrMnGa/MgO/IrCrMnGa as promising MTJs with a weakertemperature dependence of tunneling magnetoresistance ratio, owing to theirvery high Curie temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[252.0, 1300, 'K', 6]

IrCrMnGa/MgO/IrCrMnGa
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(61166, 61177)
 We proposeIrCrMnAl/MgO/IrCrMnAl and IrCrMnGa/MgO/IrCrMnGa as promising MTJs with a weakertemperature dependence of tunneling magnetoresistance ratio, owing to theirvery high Curie temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[267.0, 1300, 'K', 6]

FeRh/MgO/Cu
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(61321, 61327)
 The calculations show that the MPT-TMR of FeRh/MgO/Cu tunneljunction can be as high as hundreds of percent when the magnetic structure ofFeRh changes from G<missing VAR>-type antiferromagnetic (G<missing VAR>AFM) to ferromagnetic order.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeRh
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(61361, 61362)
 The calculations show that the MPT-TMR of FeRh/MgO/Cu tunneljunction can be as high as hundreds of percent when the magnetic structure ofFeRh changes from G<missing VAR>-type antiferromagnetic (G<missing VAR>AFM) to ferromagnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(61377, 61377)
 The calculations show that the MPT-TMR of FeRh/MgO/Cu tunneljunction can be as high as hundreds of percent when the magnetic structure ofFeRh changes from G<missing VAR>-type antiferromagnetic (G<missing VAR>AFM) to ferromagnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(61491, 61491)
 The main mechanism for the giant MPT-TMR can be attributed to theformation of interface resonant states at G<missing VAR>AFM<missing VAR>-FeRh/MgO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh/MgO
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(61494, 61498)
 The main mechanism for the giant MPT-TMR can be attributed to theformation of interface resonant states at G<missing VAR>AFM<missing VAR>-FeRh/MgO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeRh/MgO
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(61508, 61512)
 A directFeRh/MgO interface is found to be necessary for achieving high MPT-TMRexperimentally.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeRh/MgO
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(61553, 61557)
 Moreover, we find the FeRh/MgO interface with FeRh inferromagnetic phase has nearly full spin-polarization due to the negligiblemajority transmission and significantly different Fermi surface of two spinchannels.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeRh
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(61563, 61564)
 Moreover, we find the FeRh/MgO interface with FeRh inferromagnetic phase has nearly full spin-polarization due to the negligiblemajority transmission and significantly different Fermi surface of two spinchannels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(61642, 61642)
 Inaddition, electric field driven MPT of FeRh-based hetero-magneticnanostructures can be utilized to design various energy efficient tunneljunction structures and the corresponding lower power consumption devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(61660, 61661)
 Inaddition, electric field driven MPT of FeRh-based hetero-magneticnanostructures can be utilized to design various energy efficient tunneljunction structures and the corresponding lower power consumption devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(61746, 61747)
 Ourresults will stimulate further experimental investigations of MPT-TMR and otherfascinating phenomenon of FeRh-based tunnel junctions that may be promising inantiferromagnetic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61779, 61779)
Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 2, 'D', 5],[573.0, 1, ',', 10],[575.0, 0, '%', 10]

Co
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61784, 61784)
Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 2, 'D', 5],[568.0, 1, ',', 10],[570.0, 0, '%', 10]

AlN
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61796, 61797)
Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 2, 'D', 5],[555.0, 1, ',', 10],[557.0, 0, '%', 10]

ZnO
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61801, 61802)
Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 2, 'D', 5],[550.0, 1, ',', 10],[552.0, 0, '%', 10]

AlN
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61807, 61808)
 AlN and ZnO, two wide band-gap semiconductors extensively used in the displayindustry, crystallise in the wurtzite structure, which can favour the formationof epitaxial interfaces to close-packed common ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 2, 'D', 4],[544.0, 1, ',', 9],[546.0, 0, '%', 9]

ZnO
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61812, 61813)
 AlN and ZnO, two wide band-gap semiconductors extensively used in the displayindustry, crystallise in the wurtzite structure, which can favour the formationof epitaxial interfaces to close-packed common ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 2, 'D', 4],[539.0, 1, ',', 9],[541.0, 0, '%', 9]

In
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61910, 61910)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 2, 'D', 2],[442.0, 1, ',', 7],[444.0, 0, '%', 7]

Y
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61949, 61949)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 2, 'D', 2],[403.0, 1, ',', 7],[405.0, 0, '%', 7]

Co
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61962, 61962)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, 'D', 2],[390.0, 1, ',', 7],[392.0, 0, '%', 7]

Fe
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61966, 61966)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2, 'D', 2],[386.0, 1, ',', 7],[388.0, 0, '%', 7]

Y
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61969, 61969)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, 'D', 2],[383.0, 1, ',', 7],[385.0, 0, '%', 7]

AlN
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61972, 61973)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2, 'D', 2],[379.0, 1, ',', 7],[381.0, 0, '%', 7]

O
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(61978, 61978)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'D', 2],[374.0, 1, ',', 7],[376.0, 0, '%', 7]

In
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(62137, 62137)
 In general, we find that Co-based junctionspresent limited spin filtering and little magnetoresistance at low bias, sinceboth spin sub-bands cross the Fermi level with Delta1 symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, 'D', 2],[215.0, 1, ',', 3],[217.0, 0, '%', 3]

Co
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(62148, 62148)
 In general, we find that Co-based junctionspresent limited spin filtering and little magnetoresistance at low bias, sinceboth spin sub-bands cross the Fermi level with Delta1 symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2, 'D', 2],[204.0, 1, ',', 3],[206.0, 0, '%', 3]

Fe
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(62214, 62214)
 Thiscontrasts the situation of Fe, where only the minority Delta1 band isavailable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, 'D', 3],[138.0, 1, ',', 2],[140.0, 0, '%', 2]

Fe
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(62249, 62249)
 However, even in the case of Fe the magnitude of themagnetoresistance at low bias remains relatively small, mostly due toconduction away from the Gamma point and through complex bands with symmetrydifferent than Delta1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, 'D', 4],[103.0, 1, ',', 1],[105.0, 0, '%', 1]

Fe/AlN/Fe
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(62327, 62332)
 The only exception is for the Fe/AlN/Fe junction,where we predict a magnetoresitance of around 1,000% at low bias.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[226.0, 2, 'D', 5],[20.0, 1, ',', 0],[22.0, 0, '%', 0]

MgO
###Half-metallic magnetism and the search for better spin valves|Karin Everschor-Sitte,Matthias Sitte,Allan H. MacDonald###
(62542, 62543)
 First we show that a mechanism in which spin valve performance atfinite temperatures is limited by uncorrelated thermal fluctuations ofmagnetization orientations on opposite sides of a tunnel junction is in goodagreement with recent studies of the temperature-dependent magnetoresistance ofhigh quality tunnel junctions with MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Half-metallic magnetism and the search for better spin valves|Karin Everschor-Sitte,Matthias Sitte,Allan H. MacDonald###
(62668, 62669)
 We conclude that half-metallic ferromagnets can yield betterspin-value performance than current elemental transition metal ferromagnet/MgOsystems only if their ferromagnetic transition temperatures exceed sim950mathrmK.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Half-metallic magnetism and the search for better spin valves|Karin Everschor-Sitte,Matthias Sitte,Allan H. MacDonald###
(62693, 62693)
 We conclude that half-metallic ferromagnets can yield betterspin-value performance than current elemental transition metal ferromagnet/MgOsystems only if their ferromagnetic transition temperatures exceed sim950mathrmK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(62710, 62710)
Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al2O3
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(62747, 62752)
 Experiments have shown that the tunneling current in a Co/Al2O3magnetic tunneling junction (MTJ) is positively spin polarized, opposite towhat is intuitively expected from standard tunneling theory which gives thespin polarization as exclusively dependent on the density of states (D<missing VAR>OS) atE<missing VAR>F of the Co layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(62827, 62827)
 Experiments have shown that the tunneling current in a Co/Al2O3magnetic tunneling junction (MTJ) is positively spin polarized, opposite towhat is intuitively expected from standard tunneling theory which gives thespin polarization as exclusively dependent on the density of states (D<missing VAR>OS) atE<missing VAR>F of the Co layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(62834, 62834)
 Experiments have shown that the tunneling current in a Co/Al2O3magnetic tunneling junction (MTJ) is positively spin polarized, opposite towhat is intuitively expected from standard tunneling theory which gives thespin polarization as exclusively dependent on the density of states (D<missing VAR>OS) atE<missing VAR>F of the Co layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(62840, 62840)
 Experiments have shown that the tunneling current in a Co/Al2O3magnetic tunneling junction (MTJ) is positively spin polarized, opposite towhat is intuitively expected from standard tunneling theory which gives thespin polarization as exclusively dependent on the density of states (D<missing VAR>OS) atE<missing VAR>F of the Co layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(62918, 62918)
 From density functional theory (DFT)calculations, an Al-rich interface MTJ with atomic-level disorder is shown tohave a positively polarized D<missing VAR>OS near the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(62952, 62953)
 From density functional theory (DFT)calculations, an Al-rich interface MTJ with atomic-level disorder is shown tohave a positively polarized D<missing VAR>OS near the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impurity-induced tuning of quantum well states in spin-dependent resonant tunneling|A. Kalitsov,A. Coho,N. Kioussis,A. Vedyayev,M. Chshiev,A. Granovsky###
(63301, 63301)
 The underlying mechanism isthe impurity-induced shift of the quantum well states (Q<missing VAR>WS) which depends onthe impurity potential, impurity position and the symmetry of the Q<missing VAR>WS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Impurity-induced tuning of quantum well states in spin-dependent resonant tunneling|A. Kalitsov,A. Coho,N. Kioussis,A. Vedyayev,M. Chshiev,A. Granovsky###
(63333, 63334)
 The underlying mechanism isthe impurity-induced shift of the quantum well states (Q<missing VAR>WS) which depends onthe impurity potential, impurity position and the symmetry of the Q<missing VAR>WS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Quantum Transport with Spin Dephasing: A Nonequilibrium Green's Function Approach|Ahmet Ali Yanik,Gerhard Klimeck,Supriyo Datta###
(63402, 63402)
 A quantum transport model incorporating spin scattering processes ispresented using the non-equilibrium Greens<missing VAR> function (NEGF) formalism withinthe self-consistent Born approximation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Quantum Transport with Spin Dephasing: A Nonequilibrium Green's Function Approach|Ahmet Ali Yanik,Gerhard Klimeck,Supriyo Datta###
(63405, 63405)
 A quantum transport model incorporating spin scattering processes ispresented using the non-equilibrium Greens<missing VAR> function (NEGF) formalism withinthe self-consistent Born approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(IV)
###Low-frequency noise and tunnelling magnetoresistance in Fe(110)/MgO(111)/Fe(110) epitaxial magnetic tunnel junctions|R. Guerrero,F. G. Aliev,R. Villar,J. Hauch,M. Fraune,G. Guntherodt,K. Rott,H. Bruckl,G. Reiss###
(63648, 63651)
 We report on tunnelling magnetoresistance (TMR), current-voltage (IV)characteristics and low frequency noise in epitaxially grownFe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from2x<missing VAR>2 to 20x20 um2.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 20, 'x', 0]

MgO
###Low-frequency noise and tunnelling magnetoresistance in Fe(110)/MgO(111)/Fe(110) epitaxial magnetic tunnel junctions|R. Guerrero,F. G. Aliev,R. Villar,J. Hauch,M. Fraune,G. Guntherodt,K. Rott,H. Bruckl,G. Reiss###
(63722, 63723)
 The evaluated MgO energy barrier (0.50/-0.08 e<missing VAR>V), thebarrier width (13.1/-0.5 angstrom) as well as the resistance times areaproduct (7/-1 Mohmsum2) show relatively small variation, confirming a highquality epitaxy and uniformity of all MTJs studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 20, 'x', 1]

V
###Low-frequency noise and tunnelling magnetoresistance in Fe(110)/MgO(111)/Fe(110) epitaxial magnetic tunnel junctions|R. Guerrero,F. G. Aliev,R. Villar,J. Hauch,M. Fraune,G. Guntherodt,K. Rott,H. Bruckl,G. Reiss###
(63736, 63736)
 The evaluated MgO energy barrier (0.50/-0.08 e<missing VAR>V), thebarrier width (13.1/-0.5 angstrom) as well as the resistance times areaproduct (7/-1 Mohmsum2) show relatively small variation, confirming a highquality epitaxy and uniformity of all MTJs studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 20, 'x', 1]

Gd
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(63980, 63980)
Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 14, '%', 3],[230.0, 80, 'K', 4]

GdO
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(63996, 63997)
 Perpendicular magnetic tunnel junctions with GdOX<missing VAR> tunneling barriers haveshown a unique voltage controllable interlayer magnetic coupling effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 14, '%', 2],[213.0, 80, 'K', 3]

GdO
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(64041, 64042)
 Herewe investigate the quality of the GdOX<missing VAR> barrier and the coupling mechanism inthese junctions by examining the temperature dependence of the tunnelingmagnetoresistance and the interlayer coupling from room temperature down to 11K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 14, '%', 1],[168.0, 80, 'K', 2]

K
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(64102, 64102)
 Herewe investigate the quality of the GdOX<missing VAR> barrier and the coupling mechanism inthese junctions by examining the temperature dependence of the tunnelingmagnetoresistance and the interlayer coupling from room temperature down to 11K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 14, '%', 1],[108.0, 80, 'K', 2]

AlO
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(64167, 64168)
 The barrier is shown to be of good quality with the spin independentconductance only contributing a small portion, 14%, to the total roomtemperature conductance, similar to AlOX<missing VAR> and MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 14, '%', 0],[42.0, 80, 'K', 1]

MgO
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(64173, 64174)
 The barrier is shown to be of good quality with the spin independentconductance only contributing a small portion, 14%, to the total roomtemperature conductance, similar to AlOX<missing VAR> and MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 14, '%', 0],[36.0, 80, 'K', 1]

Gd
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(64267, 64267)
 This non-trivial temperature dependence is notdescribed by previous models of interlayer coupling and may be due to the largeinduced magnetic moment of the Gd ions in the barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 14, '%', 2],[57.0, 80, 'K', 1]

Mn2Au
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64292, 64294)
Tunneling magnetoresistance in Mn2Au-based pure antiferromagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 1000, '%', 6]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64311, 64311)
 Antiferromagnetic (AF) spintronics is merit on ultra-high operator speed andstability in the presence of magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 1000, '%', 5]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64477, 64477)
 Achieving noticeable MReffect in the pure AF device is diffcult but essential for the AF spintronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 1000, '%', 2]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64494, 64494)
 Achieving noticeable MReffect in the pure AF device is diffcult but essential for the AF spintronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1000, '%', 2]

Nb/Mn2Au/CdO/Mn2Au/Nb
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64527, 64540)
 Here, we study the tunnel magnetoresistance(TMR) effect in theNb/Mn2Au/CdO/Mn2Au/Nb pure AF magnetic tunnel junctions (AF-MTJs) basedon a first-principle scattering theory.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[50.0, 1000, '%', 1]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64545, 64545)
 Here, we study the tunnel magnetoresistance(TMR) effect in theNb/Mn2Au/CdO/Mn2Au/Nb pure AF magnetic tunnel junctions (AF-MTJs) basedon a first-principle scattering theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1000, '%', 1]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64555, 64555)
 Here, we study the tunnel magnetoresistance(TMR) effect in theNb/Mn2Au/CdO/Mn2Au/Nb pure AF magnetic tunnel junctions (AF-MTJs) basedon a first-principle scattering theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1000, '%', 1]

CdO
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64645, 64646)
 Giant TMRs with order of 1000% arepredicted in some symmetric junctions, which is originated from the interfacialresonance tunneling effect related with the k<missing VAR> dependent complex band structuresof CdO and Mn2Au in companion with the enhanced spin polarization of theinterfacial magnetic atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1000, '%', 0]

Mn2Au
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64650, 64652)
 Giant TMRs with order of 1000% arepredicted in some symmetric junctions, which is originated from the interfacialresonance tunneling effect related with the k<missing VAR> dependent complex band structuresof CdO and Mn2Au in companion with the enhanced spin polarization of theinterfacial magnetic atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1000, '%', 0]

Mn2Au/CdO
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64722, 64727)
 The effect of voltage bias and interfacial disordersuch as Oxygen vacancy, Manganese vacancy, and Manganese-Cadmium exchanges atMn2Au/CdO interfaces are studied also.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[132.0, 1000, '%', 1]

Nb/Mn2Au/CdO/Mn2Au/Nb
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64745, 64758)
 Our studies suggestNb/Mn2Au/CdO/Mn2Au/Nb AFMTJs promising material for AF spintronicapplication, and rocksalt CdO a potential symmetry filtering material forspintronic applications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[155.0, 1000, '%', 2]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64761, 64761)
 Our studies suggestNb/Mn2Au/CdO/Mn2Au/Nb AFMTJs promising material for AF spintronicapplication, and rocksalt CdO a potential symmetry filtering material forspintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 1000, '%', 2]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64773, 64773)
 Our studies suggestNb/Mn2Au/CdO/Mn2Au/Nb AFMTJs promising material for AF spintronicapplication, and rocksalt CdO a potential symmetry filtering material forspintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 1000, '%', 2]

CdO
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(64785, 64786)
 Our studies suggestNb/Mn2Au/CdO/Mn2Au/Nb AFMTJs promising material for AF spintronicapplication, and rocksalt CdO a potential symmetry filtering material forspintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 1000, '%', 2]

In
###Superconducting triplet pairings and anisotropic magnetoresistance effects in ferromagnet/superconductor/ferromagnet double-barrier junctions|Andreas Costa,Jaroslav Fabian###
(65051, 65051)
 In thepresence of interfacial spin-orbit couplings, special attention needs to bepaid to the spin-flip (unconventional) Andreev-reflection process that isexpected to induce superconducting triplet correlations in proximitizedregions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Superconducting triplet pairings and anisotropic magnetoresistance effects in ferromagnet/superconductor/ferromagnet double-barrier junctions|Andreas Costa,Jaroslav Fabian###
(65125, 65125)
 As a transport signature of these triplet pairings, we detectconductance double peaks around the singlet-gap energy, reflecting thecompetition between the singlet and an additionally emerging triplet gap; thelatter is an effective superconducting gap that can be ascribed to theformation of triplet Cooper pairs through interfacial spin-flip scatterings(i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiF/EuS
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(65381, 65385)
Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[165.0, 16, '%', 4]

CoFe/LiF/EuS/Ti
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(65453, 65462)
 Wefabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with anepitaxial LiF energy barrier joined with a polycrystalline EuS spin-filterbar-rier.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[88.0, 16, '%', 2]

LiF
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(65472, 65473)
 Wefabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with anepitaxial LiF energy barrier joined with a polycrystalline EuS spin-filterbar-rier.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 16, '%', 2]

EuS
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(65487, 65488)
 Wefabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with anepitaxial LiF energy barrier joined with a polycrystalline EuS spin-filterbar-rier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 16, '%', 2]

LiF
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(65512, 65513)
 Due to the water solubility of LiF, the devices were fully packagedin situ.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 16, '%', 1]

LiF
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(65602, 65603)
 The TMR inversiondepends sensitively on the thickness of LiF, and the tendency of inversiondisap-pears when LiF gets thick enough and recovers its intrinsic properties.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 16, '%', 1]

LiF
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(65623, 65624)
 The TMR inversiondepends sensitively on the thickness of LiF, and the tendency of inversiondisap-pears when LiF gets thick enough and recovers its intrinsic properties.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 16, '%', 1]

MgO/NiO
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(65665, 65669)
Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[130.0, -16, '%', 2],[135.0, 2.8, 'K', 2]

NiO
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(65692, 65693)
 The influence of insertion of an ultra-thin NiO layer between the MgO barrierand ferromagnetic electrode in magnetic tunnel junctions has been investigatedby measuring the tunneling magnetoresistance and the X<missing VAR>-ray magnetic circulardichroism (XMCD).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, -16, '%', 1],[111.0, 2.8, 'K', 1]

MgO
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(65701, 65702)
 The influence of insertion of an ultra-thin NiO layer between the MgO barrierand ferromagnetic electrode in magnetic tunnel junctions has been investigatedby measuring the tunneling magnetoresistance and the X<missing VAR>-ray magnetic circulardichroism (XMCD).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, -16, '%', 1],[102.0, 2.8, 'K', 1]

C
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(65756, 65756)
 The influence of insertion of an ultra-thin NiO layer between the MgO barrierand ferromagnetic electrode in magnetic tunnel junctions has been investigatedby measuring the tunneling magnetoresistance and the X<missing VAR>-ray magnetic circulardichroism (XMCD).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, -16, '%', 1],[48.0, 2.8, 'K', 1]

NiO
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(65834, 65835)
 We attributethis to the formation of non-collinear spin structures in the NiO layer asobserved by XMCD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, -16, '%', 1],[30.0, 2.8, 'K', 1]

C
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(65848, 65848)
 We attributethis to the formation of non-collinear spin structures in the NiO layer asobserved by XMCD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, -16, '%', 1],[44.0, 2.8, 'K', 1]

Ni
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(65864, 65864)
 The magnetic moments of the interface Ni atoms tilt from theeasy axis due to exchange interaction and the tilting angle decreases withincreasing the NiO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, -16, '%', 2],[60.0, 2.8, 'K', 2]

NiO
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(65904, 65905)
 The magnetic moments of the interface Ni atoms tilt from theeasy axis due to exchange interaction and the tilting angle decreases withincreasing the NiO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, -16, '%', 2],[100.0, 2.8, 'K', 2]

Fe
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(65966, 65966)
Strongly suppressed 1/f<missing VAR> noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0.25, 'reveals', 2],[202.0, 2, 'orders', 2]

V/MgO/Fe
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(65968, 65973)
Strongly suppressed 1/f<missing VAR> noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[165.0, 0.25, 'reveals', 2],[195.0, 2, 'orders', 2]

Fe
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(65984, 65984)
 Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch inepitaxial magnetic tunnel junctions with MgO barriers, notably suppresses bothnonmagnetic (parallel) and magnetic (antiparallel) state 1/f<missing VAR> noise and enhancestunnelling magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.25, 'reveals', 1],[184.0, 2, 'orders', 1]

V
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(65990, 65990)
 Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch inepitaxial magnetic tunnel junctions with MgO barriers, notably suppresses bothnonmagnetic (parallel) and magnetic (antiparallel) state 1/f<missing VAR> noise and enhancestunnelling magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.25, 'reveals', 1],[178.0, 2, 'orders', 1]

FeV/MgO
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(65997, 66001)
 Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch inepitaxial magnetic tunnel junctions with MgO barriers, notably suppresses bothnonmagnetic (parallel) and magnetic (antiparallel) state 1/f<missing VAR> noise and enhancestunnelling magnetoresistance (TMR).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[137.0, 0.25, 'reveals', 1],[167.0, 2, 'orders', 1]

MgO
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(66020, 66021)
 Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch inepitaxial magnetic tunnel junctions with MgO barriers, notably suppresses bothnonmagnetic (parallel) and magnetic (antiparallel) state 1/f<missing VAR> noise and enhancestunnelling magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.25, 'reveals', 1],[147.0, 2, 'orders', 1]

Fe1-x
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(66100, 66103)
 A comparative study of the room temperatureelectron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVxMTJs with 0 < x<missing VAR> < 0.25 reveals that V doping of the bottom electrode for x<missing VAR> <0.1 reduces in nearly 2 orders of magnitude the normalized nonmagnetic andmagnetic 1/f<missing VAR> noise.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[35.0, 0.25, 'reveals', 0],[65.0, 2, 'orders', 0]

MgO/Fe
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(66106, 66109)
 A comparative study of the room temperatureelectron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVxMTJs with 0 < x<missing VAR> < 0.25 reveals that V doping of the bottom electrode for x<missing VAR> <0.1 reduces in nearly 2 orders of magnitude the normalized nonmagnetic andmagnetic 1/f<missing VAR> noise.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[29.0, 0.25, 'reveals', 0],[59.0, 2, 'orders', 0]

Fe/MgO/Fe1-x
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(66113, 66121)
 A comparative study of the room temperatureelectron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVxMTJs with 0 < x<missing VAR> < 0.25 reveals that V doping of the bottom electrode for x<missing VAR> <0.1 reduces in nearly 2 orders of magnitude the normalized nonmagnetic andmagnetic 1/f<missing VAR> noise.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 0.25, 'reveals', 0],[47.0, 2, 'orders', 0]

In
###Magnetic Tunnel Junction Performance Under Mechanical Strain|Niklas Roschewsky,Sebastian Schafer,Frances Hellman,Vladimir Nikitin###
(66253, 66253)
 In this work we investigate the effect of the mechanical stress on theperformance of magnetic tunnel junctions (MTJ) with perpendicular magneticanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 50, '%', 2]

I
###Magnetic Tunnel Junction Performance Under Mechanical Strain|Niklas Roschewsky,Sebastian Schafer,Frances Hellman,Vladimir Nikitin###
(66411, 66411)
 This setup enables us to measure keydevice performance parameters, such as tunnel magnetoresistance (TMR),switching current (Ic<missing VAR>50%) and thermal stability (Delta), as afunction of applied stress.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 50, '%', 0]

SI2
###Magnetic Tunnel Junction Performance Under Mechanical Strain|Niklas Roschewsky,Sebastian Schafer,Frances Hellman,Vladimir Nikitin###
(66465, 66467)
 We find that variations in these parameters arenegligible less than SI2percent over the entire measured range betweenthe zero stress condition and the maximum stress at the point of waferbreakage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 50, '%', 1]

CoFeB/MgO/CoFeB
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(66554, 66563)
 We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeBmagnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formedbetween the CoFeB electrodes and the MgO barrier.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe(Co)
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(66584, 66587)
 We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeBmagnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formedbetween the CoFeB electrodes and the MgO barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(66597, 66599)
 We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeBmagnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formedbetween the CoFeB electrodes and the MgO barrier.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(66607, 66608)
 We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeBmagnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formedbetween the CoFeB electrodes and the MgO barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(66649, 66651)
 The unique combination ofinterfacial antiferromagnetism, giant tunneling magnetoresistance, and sharpswitching of the perpendicularly-magnetized CoFeB allows sensitive detection ofthe exchange bias.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(66744, 66745)
 More importantly, theexchange bias can also be effectively manipulated by the electric field appliedto the MgO barrier due to the voltage-controlled antiferromagnetic anisotropyin this system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Role of quantum confinement and interlayer coupling in CrI$_3$-graphene magnetic tunnel junctions|Jonathan J. Heath,Marcio Costa,Marco Buongiorno-Nardelli,Marcelo A. Kuroda###
(66795, 66797)
Role of quantum confinement and interlayer coupling in CrI3-graphene magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Role of quantum confinement and interlayer coupling in CrI$_3$-graphene magnetic tunnel junctions|Jonathan J. Heath,Marcio Costa,Marco Buongiorno-Nardelli,Marcelo A. Kuroda###
(66851, 66851)
 In order to control and enhance the related physical phenomena,quantitative descriptions linking experimental observations to atomic detailsmust be produced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Role of quantum confinement and interlayer coupling in CrI$_3$-graphene magnetic tunnel junctions|Jonathan J. Heath,Marcio Costa,Marco Buongiorno-Nardelli,Marcelo A. Kuroda###
(66953, 66955)
 Here we combine first principles and quantum ballistictransport calculations to shed important insights from an atomistic viewpointon the underlying mechanisms governing spin transport in graphene/CrI3junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Fe3O4)
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(67226, 67231)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
Featurization successful!
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 5, '%', 1]

SrTiO3
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(67263, 67266)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 5, '%', 1]

NdGaO3
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(67269, 67272)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 5, '%', 1]

MgO
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(67275, 67276)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 5, '%', 1]

SiO2
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(67279, 67281)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 5, '%', 1]

O(3-x)
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(67289, 67294)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[58.0, 5, '%', 1]

Ni
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(67304, 67304)
 Junctions with a Ni counter electrode and an aluminium oxidebarrier showed reproducibly a tunneling magnetoresistance (TMR) effect at roomtemperature of up to 5% with almost ideal switching behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 5, '%', 0]

Fe3O4
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(67389, 67392)
 This number onlypartially reflects the intrinsic high spin polarization of Fe3O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 5, '%', 1]

SiO2
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(67426, 67428)
 Only SiO2 and Al2O(3-x) barriers provide magnetically decoupledelectrodes as necessary for sharp switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 5, '%', 3]

Al2O(3-x)
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(67432, 67439)
 Only SiO2 and Al2O(3-x) barriers provide magnetically decoupledelectrodes as necessary for sharp switching.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[80.0, 5, '%', 3]

FeZnSe
###Enhanced tunneling magnetoresistance in Fe|ZnSe double junctions|Jeronimo Peralta Ramos,Ana Maria Llois###
(67583, 67585)
Enhanced tunneling magnetoresistance in FeZnSe double junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 2, 'D', 4]

FeZnSeFeZnSeFe
###Enhanced tunneling magnetoresistance in Fe|ZnSe double junctions|Jeronimo Peralta Ramos,Ana Maria Llois###
(67610, 67616)
 We calculate the tunneling magnetoresistance (TMR) of FeZnSeFeZnSeFe(001) double magnetic tunnel junctions as a function of the in-between Felayers<missing VAR> thickness, and compare these results with those of FeZnSeFe simplejunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0.2857142857142857,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe|ZnSe double junctions|Jeronimo Peralta Ramos,Ana Maria Llois###
(67645, 67645)
 We calculate the tunneling magnetoresistance (TMR) of FeZnSeFeZnSeFe(001) double magnetic tunnel junctions as a function of the in-between Felayers<missing VAR> thickness, and compare these results with those of FeZnSeFe simplejunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 2, 'D', 3]

FeZnSeFe
###Enhanced tunneling magnetoresistance in Fe|ZnSe double junctions|Jeronimo Peralta Ramos,Ana Maria Llois###
(67668, 67671)
 We calculate the tunneling magnetoresistance (TMR) of FeZnSeFeZnSeFe(001) double magnetic tunnel junctions as a function of the in-between Felayers<missing VAR> thickness, and compare these results with those of FeZnSeFe simplejunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe|ZnSe double junctions|Jeronimo Peralta Ramos,Ana Maria Llois###
(67788, 67788)
 We find that the conductances for each spin channel and the TMRstrongly depend on the in-between Fe layers<missing VAR> thickness, and that in some casesthey are enhanced with respect to simple junctions, in qualitative agreementwith recent experimental studies performed on similar systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'D', 1]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(67982, 67982)
Enhanced tunneling magnetoresistance in FemidZnSe double junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 2, 'D', 4]

ZnSe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(67984, 67985)
Enhanced tunneling magnetoresistance in FemidZnSe double junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 2, 'D', 4]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(68011, 68011)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 2, 'D', 3]

ZnSe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(68013, 68014)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(68016, 68016)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 2, 'D', 3]

ZnSe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(68018, 68019)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(68021, 68021)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(68050, 68050)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(68073, 68073)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 2, 'D', 3]

ZnSe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(68075, 68076)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(68078, 68078)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(68197, 68197)
 We find that theconductances for each spin channel and the TMR strongly depend on thein-between Fe layers<missing VAR> thickness, and that in some cases they are enhanced withrespect to simple junctions, in qualitative agreement with recent experimentalstudies performed on similar systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'D', 1]

As
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(68527, 68527)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(V)
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(68542, 68544)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(68556, 68556)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(V)
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(68561, 68563)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V2
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(68571, 68572)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V0
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(68588, 68589)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(68682, 68682)
 In this paper, we attempt the theoretical modeling of the magnetic tunneljunctions with embedded magnetic and nonmagnetic nanoparticles (NPs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(68723, 68723)
 In this paper, we attempt the theoretical modeling of the magnetic tunneljunctions with embedded magnetic and nonmagnetic nanoparticles (NPs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NP
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(68829, 68830)
 A fewabnormal tunnel magnetoresistance (TMR) effects, observed in relatedexperiments, can be easily simulated within our model we found, that thesuppressed TMR magnitudes and the TMR sign-reversing effect at small voltagesare related to the electron momentum states of the NP located inside theinsulating layer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NP
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(68872, 68873)
 All these TMR behaviors can be explained within the tunnelingmodel, where NP is simulated as a quantum well (Q<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(68889, 68889)
 All these TMR behaviors can be explained within the tunnelingmodel, where NP is simulated as a quantum well (Q<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(68970, 68970)
 The originof the TMR suppression is the quantized angle transparency for spin polarizedelectrons being in one of the lowest Q<missing VAR>W states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Local density of states as a probe for tunneling magnetoresistance effect: application to ferrimagnetic tunnel junctions|Katsuhiro Tanaka,Takuya Nomoto,Ryotaro Arita###
(69140, 69140)
 First, taking aconventional ferromagnetic MTJ as an example, we show that the product of thelocal density of states (LDOS) at the center of the barrier traces the TMReffect qualitatively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Local density of states as a probe for tunneling magnetoresistance effect: application to ferrimagnetic tunnel junctions|Katsuhiro Tanaka,Takuya Nomoto,Ryotaro Arita###
(69173, 69174)
 The LDOS inside the barrier has the information on theelectrodes and the electron tunneling through the barrier, which enables us toeasily evaluate the tunneling conductance more precisely than the conventionalJullieres<missing VAR> picture.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Local density of states as a probe for tunneling magnetoresistance effect: application to ferrimagnetic tunnel junctions|Katsuhiro Tanaka,Takuya Nomoto,Ryotaro Arita###
(69348, 69349)
 We find that the TMR effect in theferrimagnetic and antiferromagnetic MTJs changes depending on the interfacialmagnetic structures originating from the sublattice structure, which can alsobe captured by the LDOS.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###The Origin of Tunneling Anisotropic Magnetoresistance in Break Junctions|J. D. Burton,R. F. Sabirianov,J. P. Velev,O. N. Mryasov,E. Y. Tsymbal###
(69472, 69472)
 First-principles calculations of electron tunneling transport in Ni and Cobreak junctions reveal strong dependence of the conductance on themagnetization direction, an effect known as tunneling anisotropicmagnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###The Origin of Tunneling Anisotropic Magnetoresistance in Break Junctions|J. D. Burton,R. F. Sabirianov,J. P. Velev,O. N. Mryasov,E. Y. Tsymbal###
(69476, 69476)
 First-principles calculations of electron tunneling transport in Ni and Cobreak junctions reveal strong dependence of the conductance on themagnetization direction, an effect known as tunneling anisotropicmagnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###The Origin of Tunneling Anisotropic Magnetoresistance in Break Junctions|J. D. Burton,R. F. Sabirianov,J. P. Velev,O. N. Mryasov,E. Y. Tsymbal###
(69638, 69638)
 The energy andbroadening of these states is strongly affected by the magnetizationorientation due to spin-orbit coupling, causing TAMR to be sensitive to biasvoltage on a scale of a few m<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hf0.5Zr0.5O2
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(70077, 70082)
Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 2, 'nm', 3]

In
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(70147, 70147)
 In parallel, Hafnia based ferroelectrics areshowing great potential for device miniaturization down to the nanoscale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'nm', 1]

Hf0.5Zr0.5O2
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(70191, 70196)
 Herewe utilize ferroelectric Hf0.5Zr0.5O2 (HZ<missing VAR>O) with thickness of only 2 nm,epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a largeband-gap insulating barrier integrated in MFTJs with cobalt top electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'nm', 0]

H
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(70199, 70199)
 Herewe utilize ferroelectric Hf0.5Zr0.5O2 (HZ<missing VAR>O) with thickness of only 2 nm,epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a largeband-gap insulating barrier integrated in MFTJs with cobalt top electrodes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'nm', 0]

O
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(70201, 70201)
 Herewe utilize ferroelectric Hf0.5Zr0.5O2 (HZ<missing VAR>O) with thickness of only 2 nm,epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a largeband-gap insulating barrier integrated in MFTJs with cobalt top electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'nm', 0]

La0.7Sr0.3MnO3
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(70221, 70227)
 Herewe utilize ferroelectric Hf0.5Zr0.5O2 (HZ<missing VAR>O) with thickness of only 2 nm,epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a largeband-gap insulating barrier integrated in MFTJs with cobalt top electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'nm', 0]

O
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(70233, 70233)
 Herewe utilize ferroelectric Hf0.5Zr0.5O2 (HZ<missing VAR>O) with thickness of only 2 nm,epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a largeband-gap insulating barrier integrated in MFTJs with cobalt top electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'nm', 0]

As
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(70274, 70274)
 Aspreviously reported for other MFTJs with similar electrodes, the tunnelingmagnetoresistance (TMR) can be tuned and its sign can even be reversed by thebias voltage across the junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, 'nm', 1]

In
###Shadow Bands and Tunneling Magnetoresistance in Itinerant Electron Ferromagnets|A. H. MacDonald,T. Jungwirth,M. Kasner###
(70416, 70416)
 In itinerant electron ferromagnets spectral weight is transferred at finitetemperatures from quasiparticle peaks located at majority and minority-spinband energies to shadow-band peaks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(70657, 70662)
 Spin-resolved electron symmetry filtering is a key mechanism behind gianttunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunneljunctions (MTJs), providing room temperature functionality in modern spinelectronics.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[80.0, 0.5, 'V', 1]

V/MgO/Fe/MgO/Fe/Co
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(70871, 70883)
 Here, a fundamentally different approach isdemonstrated, providing a strong TMR boost under applied bias inV/MgO/Fe/MgO/Fe/Co hybrids.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[129.0, 0.5, 'V', 4]

(SOC)
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(70900, 70904)
 This pathway uses spin orbit coupling (SOC)controlled interfacial states in vanadium, which contrary to the V(001) bulkstates are allowed to tunnel to Fe(001) at low biases.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 0.5, 'V', 5]

V/MgO
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(71014, 71017)
 The experimentallyobserved strong increase of TMR with bias is modelled using two nonlinearresistances in series, with the low bias conductance of the first (V/MgO/Fe)element being boosted by the SOC-controlled interfacial states, while theconductance of the second (Fe/MgO/Fe) junctions controlled by the relativealignment of the two ferromagnetic layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[272.0, 0.5, 'V', 6]

Fe
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(71019, 71019)
 The experimentallyobserved strong increase of TMR with bias is modelled using two nonlinearresistances in series, with the low bias conductance of the first (V/MgO/Fe)element being boosted by the SOC-controlled interfacial states, while theconductance of the second (Fe/MgO/Fe) junctions controlled by the relativealignment of the two ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 0.5, 'V', 6]

SOC
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(71033, 71035)
 The experimentallyobserved strong increase of TMR with bias is modelled using two nonlinearresistances in series, with the low bias conductance of the first (V/MgO/Fe)element being boosted by the SOC-controlled interfacial states, while theconductance of the second (Fe/MgO/Fe) junctions controlled by the relativealignment of the two ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 0.5, 'V', 6]

Fe/MgO
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(71058, 71061)
 The experimentallyobserved strong increase of TMR with bias is modelled using two nonlinearresistances in series, with the low bias conductance of the first (V/MgO/Fe)element being boosted by the SOC-controlled interfacial states, while theconductance of the second (Fe/MgO/Fe) junctions controlled by the relativealignment of the two ferromagnetic layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[316.0, 0.5, 'V', 6]

Fe
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(71063, 71063)
 The experimentallyobserved strong increase of TMR with bias is modelled using two nonlinearresistances in series, with the low bias conductance of the first (V/MgO/Fe)element being boosted by the SOC-controlled interfacial states, while theconductance of the second (Fe/MgO/Fe) junctions controlled by the relativealignment of the two ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 0.5, 'V', 6]

K
###Ferromagnetic tunneling junctions at low voltages: elastic versus inelastic scattering at $T=0 K$|C. A. Dartora,G. G. Cabrera###
(71169, 71169)
Ferromagnetic tunneling junctions at low voltages elastic versus inelastic scattering at T<missing VAR>0 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ferromagnetic tunneling junctions at low voltages: elastic versus inelastic scattering at $T=0 K$|C. A. Dartora,G. G. Cabrera###
(71172, 71172)
 In this paper we analyze different contributions to the magnetoresistance ofmagnetic tunneling junctions at low voltages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/W/CoFeB
###Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture|Xueying Zhang,Wenlong Cai,Mengxing Wang,Kaihua Cao,Tianrui Zhang,Houyi Cheng,Shaoxin Li,Daoqian Zhu,Weisheng Zhao###
(71628, 71636)
 Here, we experimentally demonstrate a nanoscale spin-torquememristor based on a perpendicular-anisotropy magnetic tunnel junction with aCoFeB/W/CoFeB composite free layer structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[142.0, 2009, ',', 2],[24.0, 200, '%', 1]

W
###Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture|Xueying Zhang,Wenlong Cai,Mengxing Wang,Kaihua Cao,Tianrui Zhang,Houyi Cheng,Shaoxin Li,Daoqian Zhu,Weisheng Zhao###
(71713, 71713)
 Memristive states are maintained by robust domain wallpinning around clusters of W atoms, where nanoscale vertical chiral spintextures could be formed through the competition between opposingDzyaloshinskii-Moriya interactions and the fluctuating interlayer couplingcaused by the Ruderman-Kittel-Kasuya-Yosida interaction between the two CoFeBfree layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 2009, ',', 4],[53.0, 200, '%', 1]

CoFeB
###Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture|Xueying Zhang,Wenlong Cai,Mengxing Wang,Kaihua Cao,Tianrui Zhang,Houyi Cheng,Shaoxin Li,Daoqian Zhu,Weisheng Zhao###
(71787, 71789)
 Memristive states are maintained by robust domain wallpinning around clusters of W atoms, where nanoscale vertical chiral spintextures could be formed through the competition between opposingDzyaloshinskii-Moriya interactions and the fluctuating interlayer couplingcaused by the Ruderman-Kittel-Kasuya-Yosida interaction between the two CoFeBfree layers.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 2009, ',', 4],[127.0, 200, '%', 1]

Cr2Ge2Te6
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(71842, 71847)
Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'D', 0],[245.0, 2, 'D', 5]

W
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(71860, 71860)
 All van der Waals (vdW) Fe3GeTe2/Cr2Ge2Te6/graphite magnetic heterojunctionshave been fabricated via mechanical exfoliation and stacking, and theirmagnetotransport properties are studied in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'D', 1],[232.0, 2, 'D', 4]

Fe3GeTe2/Cr2Ge2Te6
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(71863, 71874)
 All van der Waals (vdW) Fe3GeTe2/Cr2Ge2Te6/graphite magnetic heterojunctionshave been fabricated via mechanical exfoliation and stacking, and theirmagnetotransport properties are studied in detail.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[27.0, 2, 'D', 1],[218.0, 2, 'D', 4]

At
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(71918, 71918)
 At low bias voltages largenegative junction magnetoresistances have been observed and are attributed tospin-conserving tunneling transport across the insulating Cr2Ge2Te6 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'D', 2],[174.0, 2, 'D', 3]

Cr2Ge2Te6
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(71964, 71969)
 At low bias voltages largenegative junction magnetoresistances have been observed and are attributed tospin-conserving tunneling transport across the insulating Cr2Ge2Te6 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2, 'D', 2],[123.0, 2, 'D', 3]

Cr2Ge2Te6
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(72037, 72042)
 Thenegative sign of the tunneling magnetoresistance (TMR) suggests that the bottomof conduction band in Cr2Ge2Te6 belongs to minority spins, opposite to thefindings of some first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 2, 'D', 4],[50.0, 2, 'D', 1]

W
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(72084, 72084)
 This work shows that the vdWheterostructures based on 2D magnetic insulators are a valuable platform togain further insight into spin polarized tunneling transport, which is thebasis for pursuing high performance spintronic devices and a large variety ofquantum phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2, 'D', 5],[8.0, 2, 'D', 0]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72187, 72187)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 20, '%', 1],[148.0, 200, 'C', 1],[162.0, 112, '%', 1],[170.0, 350, 'C', 1],[278.0, 275, 'C', 2],[409.0, 350, 'C', 5],[475.0, 275, 'C', 6]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72189, 72189)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 20, '%', 1],[146.0, 200, 'C', 1],[160.0, 112, '%', 1],[168.0, 350, 'C', 1],[276.0, 275, 'C', 2],[407.0, 350, 'C', 5],[473.0, 275, 'C', 6]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72191, 72191)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 20, '%', 1],[144.0, 200, 'C', 1],[158.0, 112, '%', 1],[166.0, 350, 'C', 1],[274.0, 275, 'C', 2],[405.0, 350, 'C', 5],[471.0, 275, 'C', 6]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72195, 72196)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 20, '%', 1],[139.0, 200, 'C', 1],[153.0, 112, '%', 1],[161.0, 350, 'C', 1],[269.0, 275, 'C', 2],[400.0, 350, 'C', 5],[466.0, 275, 'C', 6]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72200, 72200)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 20, '%', 1],[135.0, 200, 'C', 1],[149.0, 112, '%', 1],[157.0, 350, 'C', 1],[265.0, 275, 'C', 2],[396.0, 350, 'C', 5],[462.0, 275, 'C', 6]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72202, 72202)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 20, '%', 1],[133.0, 200, 'C', 1],[147.0, 112, '%', 1],[155.0, 350, 'C', 1],[263.0, 275, 'C', 2],[394.0, 350, 'C', 5],[460.0, 275, 'C', 6]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72204, 72204)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 20, '%', 1],[131.0, 200, 'C', 1],[145.0, 112, '%', 1],[153.0, 350, 'C', 1],[261.0, 275, 'C', 2],[392.0, 350, 'C', 5],[458.0, 275, 'C', 6]

Co40Fe40B20
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72245, 72250)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 20, '%', 0],[85.0, 200, 'C', 0],[99.0, 112, '%', 0],[107.0, 350, 'C', 0],[215.0, 275, 'C', 1],[346.0, 350, 'C', 4],[412.0, 275, 'C', 5]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72254, 72255)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 20, '%', 0],[80.0, 200, 'C', 0],[94.0, 112, '%', 0],[102.0, 350, 'C', 0],[210.0, 275, 'C', 1],[341.0, 350, 'C', 4],[407.0, 275, 'C', 5]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72287, 72287)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 20, '%', 0],[48.0, 200, 'C', 0],[62.0, 112, '%', 0],[70.0, 350, 'C', 0],[178.0, 275, 'C', 1],[309.0, 350, 'C', 4],[375.0, 275, 'C', 5]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72289, 72289)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 20, '%', 0],[46.0, 200, 'C', 0],[60.0, 112, '%', 0],[68.0, 350, 'C', 0],[176.0, 275, 'C', 1],[307.0, 350, 'C', 4],[373.0, 275, 'C', 5]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72291, 72291)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 20, '%', 0],[44.0, 200, 'C', 0],[58.0, 112, '%', 0],[66.0, 350, 'C', 0],[174.0, 275, 'C', 1],[305.0, 350, 'C', 4],[371.0, 275, 'C', 5]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72295, 72296)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 20, '%', 0],[39.0, 200, 'C', 0],[53.0, 112, '%', 0],[61.0, 350, 'C', 0],[169.0, 275, 'C', 1],[300.0, 350, 'C', 4],[366.0, 275, 'C', 5]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72300, 72300)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 20, '%', 0],[35.0, 200, 'C', 0],[49.0, 112, '%', 0],[57.0, 350, 'C', 0],[165.0, 275, 'C', 1],[296.0, 350, 'C', 4],[362.0, 275, 'C', 5]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72302, 72302)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 20, '%', 0],[33.0, 200, 'C', 0],[47.0, 112, '%', 0],[55.0, 350, 'C', 0],[163.0, 275, 'C', 1],[294.0, 350, 'C', 4],[360.0, 275, 'C', 5]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72304, 72304)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 20, '%', 0],[31.0, 200, 'C', 0],[45.0, 112, '%', 0],[53.0, 350, 'C', 0],[161.0, 275, 'C', 1],[292.0, 350, 'C', 4],[358.0, 275, 'C', 5]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72383, 72384)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 20, '%', 1],[48.0, 200, 'C', 1],[34.0, 112, '%', 1],[26.0, 350, 'C', 1],[81.0, 275, 'C', 0],[212.0, 350, 'C', 3],[278.0, 275, 'C', 4]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72412, 72412)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 20, '%', 1],[77.0, 200, 'C', 1],[63.0, 112, '%', 1],[55.0, 350, 'C', 1],[53.0, 275, 'C', 0],[184.0, 350, 'C', 3],[250.0, 275, 'C', 4]

O
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72414, 72414)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 20, '%', 1],[79.0, 200, 'C', 1],[65.0, 112, '%', 1],[57.0, 350, 'C', 1],[51.0, 275, 'C', 0],[182.0, 350, 'C', 3],[248.0, 275, 'C', 4]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72423, 72423)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 20, '%', 1],[88.0, 200, 'C', 1],[74.0, 112, '%', 1],[66.0, 350, 'C', 1],[42.0, 275, 'C', 0],[173.0, 350, 'C', 3],[239.0, 275, 'C', 4]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72425, 72425)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 20, '%', 1],[90.0, 200, 'C', 1],[76.0, 112, '%', 1],[68.0, 350, 'C', 1],[40.0, 275, 'C', 0],[171.0, 350, 'C', 3],[237.0, 275, 'C', 4]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72427, 72427)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 20, '%', 1],[92.0, 200, 'C', 1],[78.0, 112, '%', 1],[70.0, 350, 'C', 1],[38.0, 275, 'C', 0],[169.0, 350, 'C', 3],[235.0, 275, 'C', 4]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72431, 72432)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 20, '%', 1],[96.0, 200, 'C', 1],[82.0, 112, '%', 1],[74.0, 350, 'C', 1],[33.0, 275, 'C', 0],[164.0, 350, 'C', 3],[230.0, 275, 'C', 4]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72487, 72487)
 This is accompanied by asimultaneous increase of the Fe magnetic moment and the tunnelmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 20, '%', 2],[152.0, 200, 'C', 2],[138.0, 112, '%', 2],[130.0, 350, 'C', 2],[22.0, 275, 'C', 1],[109.0, 350, 'C', 2],[175.0, 275, 'C', 3]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72516, 72517)
 However, the TMR of the MgO based junctions increasesfurther for higher annealing temperature which can not be caused by Fe-Oreduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 20, '%', 3],[181.0, 200, 'C', 3],[167.0, 112, '%', 3],[159.0, 350, 'C', 3],[51.0, 275, 'C', 2],[79.0, 350, 'C', 1],[145.0, 275, 'C', 2]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72548, 72548)
 However, the TMR of the MgO based junctions increasesfurther for higher annealing temperature which can not be caused by Fe-Oreduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 20, '%', 3],[213.0, 200, 'C', 3],[199.0, 112, '%', 3],[191.0, 350, 'C', 3],[83.0, 275, 'C', 2],[48.0, 350, 'C', 1],[114.0, 275, 'C', 2]

O
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72550, 72550)
 However, the TMR of the MgO based junctions increasesfurther for higher annealing temperature which can not be caused by Fe-Oreduction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 20, '%', 3],[215.0, 200, 'C', 3],[201.0, 112, '%', 3],[193.0, 350, 'C', 3],[85.0, 275, 'C', 2],[46.0, 350, 'C', 1],[112.0, 275, 'C', 2]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72581, 72581)
 The occurrence of an x<missing VAR>-ray absorption near-edge structure above theFe and Co L<missing VAR>-edges after annealing at 350C indicates the recrystallization ofthe Co-Fe-B electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 20, '%', 4],[246.0, 200, 'C', 4],[232.0, 112, '%', 4],[224.0, 350, 'C', 4],[116.0, 275, 'C', 3],[15.0, 350, 'C', 0],[81.0, 275, 'C', 1]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72585, 72585)
 The occurrence of an x<missing VAR>-ray absorption near-edge structure above theFe and Co L<missing VAR>-edges after annealing at 350C indicates the recrystallization ofthe Co-Fe-B electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 20, '%', 4],[250.0, 200, 'C', 4],[236.0, 112, '%', 4],[228.0, 350, 'C', 4],[120.0, 275, 'C', 3],[11.0, 350, 'C', 0],[77.0, 275, 'C', 1]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72609, 72609)
 The occurrence of an x<missing VAR>-ray absorption near-edge structure above theFe and Co L<missing VAR>-edges after annealing at 350C indicates the recrystallization ofthe Co-Fe-B electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 20, '%', 4],[274.0, 200, 'C', 4],[260.0, 112, '%', 4],[252.0, 350, 'C', 4],[144.0, 275, 'C', 3],[13.0, 350, 'C', 0],[53.0, 275, 'C', 1]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72611, 72611)
 The occurrence of an x<missing VAR>-ray absorption near-edge structure above theFe and Co L<missing VAR>-edges after annealing at 350C indicates the recrystallization ofthe Co-Fe-B electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 20, '%', 4],[276.0, 200, 'C', 4],[262.0, 112, '%', 4],[254.0, 350, 'C', 4],[146.0, 275, 'C', 3],[15.0, 350, 'C', 0],[51.0, 275, 'C', 1]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72613, 72613)
 The occurrence of an x<missing VAR>-ray absorption near-edge structure above theFe and Co L<missing VAR>-edges after annealing at 350C indicates the recrystallization ofthe Co-Fe-B electrode.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 20, '%', 4],[278.0, 200, 'C', 4],[264.0, 112, '%', 4],[256.0, 350, 'C', 4],[148.0, 275, 'C', 3],[17.0, 350, 'C', 0],[49.0, 275, 'C', 1]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72671, 72671)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 20, '%', 6],[336.0, 200, 'C', 6],[322.0, 112, '%', 6],[314.0, 350, 'C', 6],[206.0, 275, 'C', 5],[75.0, 350, 'C', 2],[9.0, 275, 'C', 1]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72679, 72679)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 20, '%', 6],[344.0, 200, 'C', 6],[330.0, 112, '%', 6],[322.0, 350, 'C', 6],[214.0, 275, 'C', 5],[83.0, 350, 'C', 2],[17.0, 275, 'C', 1]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72681, 72681)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 20, '%', 6],[346.0, 200, 'C', 6],[332.0, 112, '%', 6],[324.0, 350, 'C', 6],[216.0, 275, 'C', 5],[85.0, 350, 'C', 2],[19.0, 275, 'C', 1]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72683, 72683)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 20, '%', 6],[348.0, 200, 'C', 6],[334.0, 112, '%', 6],[326.0, 350, 'C', 6],[218.0, 275, 'C', 5],[87.0, 350, 'C', 2],[21.0, 275, 'C', 1]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72707, 72707)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 20, '%', 6],[372.0, 200, 'C', 6],[358.0, 112, '%', 6],[350.0, 350, 'C', 6],[242.0, 275, 'C', 5],[111.0, 350, 'C', 2],[45.0, 275, 'C', 1]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72719, 72720)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 20, '%', 6],[384.0, 200, 'C', 6],[370.0, 112, '%', 6],[362.0, 350, 'C', 6],[254.0, 275, 'C', 5],[123.0, 350, 'C', 2],[57.0, 275, 'C', 1]

B2O3
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(72731, 72734)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,0.4,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 20, '%', 6],[396.0, 200, 'C', 6],[382.0, 112, '%', 6],[374.0, 350, 'C', 6],[266.0, 275, 'C', 5],[135.0, 350, 'C', 2],[69.0, 275, 'C', 1]

In
###Spin effects in single electron tunneling|J. Barnas,I. Weymann###
(72855, 72855)
 In this review we present and discuss recent theoretical results onelectron and spin transport through ferromagnetic mesoscopic junctionsincluding two or more barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin effects in single electron tunneling|J. Barnas,I. Weymann###
(73184, 73184)
 In the former case we distinguish between thesequential tunnelling and cotunneling regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin effects in single electron tunneling|J. Barnas,I. Weymann###
(73212, 73212)
 In the strong coupling regime weconcentrate on the Kondo phenomenon, which in the case of transport throughquantum dots or molecules leads to an enhanced conductance and to a pronouncedzero-bias Kondo peak in the differential conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(73307, 73307)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(73311, 73311)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(73321, 73324)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(73371, 73374)
 The half-metallic Heusler compound Co2MnSi is a very attractive materialfor spintronic devices because it exhibits very high tunnellingmagnetoresistance ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(73430, 73433)
 This work reports on a spectroscopic investigation ofthin Co2MnSi films as they are used as electrodes in magnetic tunneljunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(73492, 73492)
 The investigated films exhibit a remanent in-plane magnetisationwith a magnetic moment of about 5muB when saturated, as expected.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(73551, 73551)
 Magneticdichroism in emission and absorption was measured at the Co and Mn 2p<missing VAR> corelevels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(73555, 73555)
 Magneticdichroism in emission and absorption was measured at the Co and Mn 2p<missing VAR> corelevels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(73601, 73601)
 The photoelectron spectra were excited by circularly polarised hardX<missing VAR>-rays with an energy of of 6keV and taken from the remanently magnetisedfilm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(73694, 73694)
 An analysis reveals thelocalised character of the electrons and magnetic moments attributed to the Mnatoms, whereas the electrons related to the Co atoms contribute an itinerantpart to the total magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(73712, 73712)
 An analysis reveals thelocalised character of the electrons and magnetic moments attributed to the Mnatoms, whereas the electrons related to the Co atoms contribute an itinerantpart to the total magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions|Kirill I. Bolotin,Ferdinand Kuemmeth,D. C. Ralph###
(73928, 73928)
 The pattern ofmagnetoresistance is sensitive to changes in bias on a scale of a few m<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 25, '%', 1]

SrRuO3/BaTiO3/SrRuO3
###Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier|Nuala M. Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(74094, 74107)
 We investigate, by first-principles densityfunctional theory, the bias-dependent transport properties of an all-oxideSrRuO3/BaTiO3/SrRuO3 MTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

BaTiO3
###Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier|Nuala M. Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(74120, 74123)
 This incorporates a BaTiO3 barrier which can be foundeither in a non-ferroic or in a ferroelectric state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier|Nuala M. Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(74157, 74157)
 In such an MTJ not onlycan the tunneling magnetoresistance reach enormous values, but also, forcertain voltages, its sign can be changed by altering the barrier electricstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs
###Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations|Athanasios N. Chantis,Kirill D. Belashchenko,Darryl L. Smith,Evgeny Y. Tsymbal,Mark van Schilfgaarde,Robert C. Albers###
(74272, 74275)
Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states First-principles calculations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs/Cu
###Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations|Athanasios N. Chantis,Kirill D. Belashchenko,Darryl L. Smith,Evgeny Y. Tsymbal,Mark van Schilfgaarde,Robert C. Albers###
(74395, 74400)
 Using a Greens<missing VAR> function approach within the local spin densityapproximation we calculate spin-dependent current in a Fe/GaAs/Cu tunneljunction as a function of applied bias voltage.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs
###Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations|Athanasios N. Chantis,Kirill D. Belashchenko,Darryl L. Smith,Evgeny Y. Tsymbal,Mark van Schilfgaarde,Robert C. Albers###
(74492, 74495)
 This result explains recent experimental data on spininjection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Femagnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs/Fe
###Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations|Athanasios N. Chantis,Kirill D. Belashchenko,Darryl L. Smith,Evgeny Y. Tsymbal,Mark van Schilfgaarde,Robert C. Albers###
(74509, 74514)
 This result explains recent experimental data on spininjection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Femagnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co2CrAl/NaNbO3/Co2CrAl
###Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction|Yongqing Cai,Zhaoqiang Bai,Ming Yang,Yuan Ping Feng###
(74554, 74567)
Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co2CrAl
###Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction|Yongqing Cai,Zhaoqiang Bai,Ming Yang,Yuan Ping Feng###
(74636, 74639)
 First-principles calculations were carried out to investigate interfacialstrain effects on spin injection and spin polarization of a magnetic tunneljunction consisting of half-metallic full-Heusler alloy Co2CrAl andferroelectric perovskite NaNbO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NaNbO3
###Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction|Yongqing Cai,Zhaoqiang Bai,Ming Yang,Yuan Ping Feng###
(74648, 74651)
 First-principles calculations were carried out to investigate interfacialstrain effects on spin injection and spin polarization of a magnetic tunneljunction consisting of half-metallic full-Heusler alloy Co2CrAl andferroelectric perovskite NaNbO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S/F
###Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions|Kaifei Kang,Shengwei Jiang,Helmuth Berger,Kenji Watanabe,Takashi Taniguchi,László Forró,Jie Shan,Kin Fai Mak###
(75025, 75027)
 Here wereport tunneling spectroscopy under an in-plane magnetic field ofsuperconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that aremade of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 2, 'D', 0],[45.0, 100, '%', 1],[191.0, 2, 'K', 3]

S
###Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions|Kaifei Kang,Shengwei Jiang,Helmuth Berger,Kenji Watanabe,Takashi Taniguchi,László Forró,Jie Shan,Kin Fai Mak###
(75029, 75029)
 Here wereport tunneling spectroscopy under an in-plane magnetic field ofsuperconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that aremade of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'D', 0],[43.0, 100, '%', 1],[189.0, 2, 'K', 3]

NbSe2
###Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions|Kaifei Kang,Shengwei Jiang,Helmuth Berger,Kenji Watanabe,Takashi Taniguchi,László Forró,Jie Shan,Kin Fai Mak###
(75050, 75052)
 Here wereport tunneling spectroscopy under an in-plane magnetic field ofsuperconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that aremade of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'D', 0],[20.0, 100, '%', 1],[166.0, 2, 'K', 3]

CrBr3
###Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions|Kaifei Kang,Shengwei Jiang,Helmuth Berger,Kenji Watanabe,Takashi Taniguchi,László Forró,Jie Shan,Kin Fai Mak###
(75060, 75062)
 Here wereport tunneling spectroscopy under an in-plane magnetic field ofsuperconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that aremade of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, 'D', 0],[10.0, 100, '%', 1],[156.0, 2, 'K', 3]

Hf0.5Zr0.5O2
###Magneto-ionic control of spin polarization in magnetic tunnel junctions|Yingfen Wei,Sylvia Matzen,Cynthia P. Quinteros,Thomas Maroutian,Guillaume Agnus,Philippe Lecoeur,Beatriz Noheda###
(75312, 75317)
 Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported toshow both tunneling magnetoresistance effect (TMR) and tunnelingelectroresistance effect (TER), displaying four resistance states by magneticand electric field switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 6, '%', 1]

In
###Theory of the ac spin-valve effect|Denis Kochan,Martin Gmitra,Jaroslav Fabian###
(75764, 75764)
 In wide junctions the acmagnetoresistance oscillates between positive and negative values, reflectingresonant amplification and depletion of the spin accumulation, while the lineshape for thin tunnel junctions is predicted to be purely Lorentzian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/ZnSe/Fe/ZnSe/Fe
###Gate control of the tunneling magnetoresistance in double-barrier junctions|J. Peralta-Ramos,A. M. Llois###
(75984, 75994)
 We calculate the conductances and the tunneling magnetoresistance (TMR) ofdouble magnetic tunnel junctions, taking as a model example junctions composedof Fe/ZnSe/Fe/ZnSe/Fe (001).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe
###Gate control of the tunneling magnetoresistance in double-barrier junctions|J. Peralta-Ramos,A. M. Llois###
(76034, 76034)
 The calculations are done as a function of thegate voltage applied to the in-between Fe layer slab.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Gate control of the tunneling magnetoresistance in double-barrier junctions|J. Peralta-Ramos,A. M. Llois###
(76068, 76068)
 We find that theapplication of a gate voltage to the in-between Fe slab strongly affects thejunctions TMR due to the tuning or untuning of conductance resonances mediatedby quantum well states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Gate control of the tunneling magnetoresistance in double-barrier junctions|J. Peralta-Ramos,A. M. Llois###
(76168, 76168)
 The gate voltage allows a significant enhancement ofthe TMR, in a more controllable way than by changing the thickness of thein-between Fe slab.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis|J. P. Cascales,D. Herranz,J. L. Sambricio,U. Ebels,J. A. Katine,F. G. Aliev###
(76441, 76442)
Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis|J. P. Cascales,D. Herranz,J. L. Sambricio,U. Ebels,J. A. Katine,F. G. Aliev###
(76485, 76494)
 We report on room temperature magnetoresistance and low frequency noise insub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin(0.9nm) barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

C
###Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis|J. P. Cascales,D. Herranz,J. L. Sambricio,U. Ebels,J. A. Katine,F. G. Aliev###
(76561, 76561)
 For magnetic fields applied along the hard axis, we observecurrent induced magnetization switching between the antiparallel and parallelalignments at D<missing VAR>C current densities as low as 4106A/cm2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(76756, 76759)
Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(Cr)
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(76788, 76790)
 Using first-principles calculations, we investigated the impact of chromium(Cr) and vanadium (V) impurities on the magnetic anisotropy and spinpolarization in Fe/MgO magnetic tunnel junctions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(V)
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(76796, 76798)
 Using first-principles calculations, we investigated the impact of chromium(Cr) and vanadium (V) impurities on the magnetic anisotropy and spinpolarization in Fe/MgO magnetic tunnel junctions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(76819, 76822)
 Using first-principles calculations, we investigated the impact of chromium(Cr) and vanadium (V) impurities on the magnetic anisotropy and spinpolarization in Fe/MgO magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(76888, 76888)
 It is demonstrated usinglayer resolved anisotropy calculation technique, that while the impurity nearthe interface has a drastic effect in decreasing the perpendicular magneticanisotropy (PM<missing VAR>A), its position within the bulk allows maintaining high surfacePM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(76913, 76913)
 It is demonstrated usinglayer resolved anisotropy calculation technique, that while the impurity nearthe interface has a drastic effect in decreasing the perpendicular magneticanisotropy (PM<missing VAR>A), its position within the bulk allows maintaining high surfacePM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(76966, 76966)
 Moreover, the effective magnetic anisotropy has a strong tendency to gofrom in-plane to out-of-plane character as a function of Cr and V concentrationfavoring out-of-plane magnetization direction for 1.5 nm thick Fe layers atimpurity concentrations above 20 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(76970, 76970)
 Moreover, the effective magnetic anisotropy has a strong tendency to gofrom in-plane to out-of-plane character as a function of Cr and V concentrationfavoring out-of-plane magnetization direction for 1.5 nm thick Fe layers atimpurity concentrations above 20 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(76995, 76995)
 Moreover, the effective magnetic anisotropy has a strong tendency to gofrom in-plane to out-of-plane character as a function of Cr and V concentrationfavoring out-of-plane magnetization direction for 1.5 nm thick Fe layers atimpurity concentrations above 20 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(77013, 77013)
 At the same time, spin polarization is notaffected and even enhanced in most situations favoring an increase of tunnelmagnetoresistance (TMR) values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77166, 77166)
 Analog content-addressable memories (ACAM) are beingrecently studied for in-memory computing to efficiently convert between analogand digital signals.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77238, 77238)
 Magnetic memory elements such as magnetic tunnel junctions(MTJs) could be useful for ACAM<missing VAR> due to their low read/write energy and highendurance, but MTJs are usually restricted to digital values.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77306, 77306)
 The spin orbittorque-driven domain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) has been recentlyshown to have multi-bit function.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77339, 77339)
 Here, an ACAM<missing VAR> circuit is studied that usestwo domain wall-magnetic tunnel junctions (D<missing VAR>W-MTJs) as the analog storageelements.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77368, 77368)
 Here, an ACAM<missing VAR> circuit is studied that usestwo domain wall-magnetic tunnel junctions (D<missing VAR>W-MTJs) as the analog storageelements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77390, 77390)
 Prototype D<missing VAR>W-MTJ data is input into the magnetic ACAM<missing VAR> (M<missing VAR>ACAM) circuitsimulation, showing ternary CAM<missing VAR> function.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77409, 77409)
 Prototype D<missing VAR>W-MTJ data is input into the magnetic ACAM<missing VAR> (M<missing VAR>ACAM) circuitsimulation, showing ternary CAM<missing VAR> function.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77416, 77416)
 Prototype D<missing VAR>W-MTJ data is input into the magnetic ACAM<missing VAR> (M<missing VAR>ACAM) circuitsimulation, showing ternary CAM<missing VAR> function.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77431, 77431)
 Prototype D<missing VAR>W-MTJ data is input into the magnetic ACAM<missing VAR> (M<missing VAR>ACAM) circuitsimulation, showing ternary CAM<missing VAR> function.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77489, 77489)
 Device-circuit co-design is carriedout, showing that 8-10 weight bits are achievable, and that designingasymmetrical spacing of the available D<missing VAR>W positions in the device leads toevenly spaced ACAM<missing VAR> search bounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77509, 77509)
 Device-circuit co-design is carriedout, showing that 8-10 weight bits are achievable, and that designingasymmetrical spacing of the available D<missing VAR>W positions in the device leads toevenly spaced ACAM<missing VAR> search bounds.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77543, 77543)
 Analyzing available spin orbit torquematerials shows platinum provides the largest M<missing VAR>ACAM<missing VAR> search bound while stillallowing spin orbit torque domain wall motion, and that the circuit isoptimized with minimized MTJ resistance, minimized spin orbit torque materialresistance, and maximized tunnel magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77634, 77634)
 These results show thefeasibility of using D<missing VAR>W-MTJs for M<missing VAR>ACAM<missing VAR> and provide design parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(77644, 77644)
 These results show thefeasibility of using D<missing VAR>W-MTJs for M<missing VAR>ACAM<missing VAR> and provide design parameters.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Scaling Projections on Spin Transfer Torque Magnetic Tunnel Junctions|Debasis Das,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(78119, 78119)
 As the transverse dimension ineach case reduces, we demonstrate that the transverse mode energy profile playsa major role in the resistance-area product.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Scaling Projections on Spin Transfer Torque Magnetic Tunnel Junctions|Debasis Das,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(78311, 78311)
 In the pentalayer case, we observe an oscillatory behavior atsmaller areas as a result of double barrier tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites|C. Hoefener,J. B. Philipp,J. Klein,L. Alff,A. Marx,B. Buechner,R. Gross###
(78466, 78466)
 We have performed a systematic analysis of the voltage and temperaturedependence of the tunneling magnetoresistance (TMR) of grain boundaries (G<missing VAR>B) inthe manganites.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites|C. Hoefener,J. B. Philipp,J. Klein,L. Alff,A. Marx,B. Buechner,R. Gross###
(78663, 78663)
 Our analysis gives strong evidencethat the observed drastic decrease of the G<missing VAR>B-TMR in manganites is caused by animperfect tunneling barrier.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(78711, 78715)
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(78741, 78741)
 Spin-transfer-torque magnetic random access memory (STT-MRAM) attractsextensive attentions due to its non-volatility, high density and low powerconsumption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(78791, 78791)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(78802, 78807)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(78861, 78861)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(78890, 78892)
 It has beenexperimentally proven that a capping layer coating on CoFeB layer is essentialto obtain a strong PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(78909, 78909)
 It has beenexperimentally proven that a capping layer coating on CoFeB layer is essentialto obtain a strong PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(78935, 78935)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(78954, 78954)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(78961, 78965)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(78997, 78997)
 The trend of PM<missing VAR>A variation with different capping materialsagrees well with experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(79031, 79031)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(79054, 79058)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(79062, 79063)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(79089, 79089)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(79091, 79091)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(79098, 79099)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(79139, 79139)
 The variation of PM<missing VAR>A with differentcapping materials is attributed to the different hybridizations of both d<missing VAR> and p<missing VAR>orbitals via spin-orbital coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(79209, 79209)
 This work can significantly benefit theresearch and development of nanoscale STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero###
(79353, 79355)
 Here, wereport tunneling through the layered magnetic insulator CrI3 as a function oftemperature and applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, 'D', 3],[75.0, 95, '%', 2],[80.0, 300, '%', 2],[86.0, 550, '%', 2]

CrI3
###Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero###
(79456, 79458)
 The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 2, 'D', 5],[26.0, 95, '%', 0],[21.0, 300, '%', 0],[15.0, 550, '%', 0]

CrI3
###Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero###
(79509, 79511)
 We further measure inelastic tunneling spectra for our junctions,unveiling a rich spectrum of collective magnetic excitations (magnons) in CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 2, 'D', 6],[79.0, 95, '%', 1],[74.0, 300, '%', 1],[68.0, 550, '%', 1]

CrO2/TiO2
###Assisted Tunneling in Ferromagnetic Junctions and Half-Metallic Oxides|A. M. Bratkovsky###
(79968, 79974)
 Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[316.0, 30, '%', 7],[105.0, 100, '%', 2],[16.0, 1000, 'percent', 1]

CrO2/RuO2
###Assisted Tunneling in Ferromagnetic Junctions and Half-Metallic Oxides|A. M. Bratkovsky###
(79978, 79984)
 Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[326.0, 30, '%', 7],[115.0, 100, '%', 2],[26.0, 1000, 'percent', 1]

BiFeO3
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(80015, 80018)
Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 30, '%', 3]

BiFeO3
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(80041, 80044)
 We report on the functionalization of multiferroic BiFeO3 epitaxial films forspintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 30, '%', 2]

BiFeO3
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(80081, 80084)
 A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 30, '%', 1]

La2
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(80102, 80103)
 A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 30, '%', 1]

Sr1
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(80106, 80107)
 A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 30, '%', 1]

MnO3
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(80110, 80112)
 A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 30, '%', 1]

Co
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(80117, 80117)
 A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 30, '%', 1]

In
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(80122, 80122)
 In such structures, a positive tunnel magnetoresistance up to30% is obtained at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 30, '%', 0]

BiFeO3
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(80183, 80186)
 A second example is the exploitation of theantiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (60 Oe)exchange bias on a ferromagnetic film of CoFeB, at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 30, '%', 1]

CoFeB
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(80219, 80221)
 A second example is the exploitation of theantiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (60 Oe)exchange bias on a ferromagnetic film of CoFeB, at room temperature.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 30, '%', 1]

In
###Skyrmions in magnetic tunnel junctions|Xueying Zhang,Wenlong Cai,Xichao Zhang,Zilu Wang,Zhi Li,Yu Zhang,Kaihua Cao,Na Lei,Wang Kang,Yue Zhang,Haiming Yu,Yan Zhou,Weisheng Zhao###
(80287, 80287)
 In this work, we demonstrate that skyrmions can be nucleated in the freelayer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriyainteractions (DMI) by a spin-polarized current with the assistance of strayfields from the pinned layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Skyrmions in magnetic tunnel junctions|Xueying Zhang,Wenlong Cai,Xichao Zhang,Zilu Wang,Zhi Li,Yu Zhang,Kaihua Cao,Na Lei,Wang Kang,Yue Zhang,Haiming Yu,Yan Zhou,Weisheng Zhao###
(80345, 80345)
 In this work, we demonstrate that skyrmions can be nucleated in the freelayer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriyainteractions (DMI) by a spin-polarized current with the assistance of strayfields from the pinned layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Skyrmions in magnetic tunnel junctions|Xueying Zhang,Wenlong Cai,Xichao Zhang,Zilu Wang,Zhi Li,Yu Zhang,Kaihua Cao,Na Lei,Wang Kang,Yue Zhang,Haiming Yu,Yan Zhou,Weisheng Zhao###
(80412, 80412)
 The size, stability and number of createdskyrmions can be tuned by either the DMI strength or the stray fielddistribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Skyrmions in magnetic tunnel junctions|Xueying Zhang,Wenlong Cai,Xichao Zhang,Zilu Wang,Zhi Li,Yu Zhang,Kaihua Cao,Na Lei,Wang Kang,Yue Zhang,Haiming Yu,Yan Zhou,Weisheng Zhao###
(80446, 80446)
 The interaction between the stray field and the DMI effectivefield is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars|N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Langer,B. Ocker,H. W. Schumacher###
(80564, 80573)
Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[288.0, 90, '%', 6],[298.0, 1.5, 'nm', 6]

CoFeB/MgO/CoFeB
###Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars|N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Langer,B. Ocker,H. W. Schumacher###
(80611, 80620)
 We investigate the spin-dependent Seebeck coefficient and the tunnelingmagneto thermopower of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ) in thepresence of thermal gradients across the MTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[241.0, 90, '%', 5],[251.0, 1.5, 'nm', 5]

V/K
###Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars|N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Langer,B. Ocker,H. W. Schumacher###
(80819, 80821)
 Based on this, largespin-dependent Seebeck coefficients of the order of (240 pm 110) muV/K arederived.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[40.0, 90, '%', 1],[50.0, 1.5, 'nm', 1]

MgO
###Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars|N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Langer,B. Ocker,H. W. Schumacher###
(80873, 80874)
 From additional measurements on MTJs after dielectric breakdown, atunneling magneto thermopower up to 90% can be derived for 1.5 nm MgO based MTJnanopillars.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 90, '%', 0],[2.0, 1.5, 'nm', 0]

La0.67Sr0.33MnO3
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(81037, 81043)
 Here we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevelresistance states in the presence of gradually reversed ferroelectric domainsvia tunneling electro-resistance and tunneling magnetoresistance, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(81050, 81050)
 Here we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevelresistance states in the presence of gradually reversed ferroelectric domainsvia tunneling electro-resistance and tunneling magnetoresistance, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(81058, 81059)
 Here we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevelresistance states in the presence of gradually reversed ferroelectric domainsvia tunneling electro-resistance and tunneling magnetoresistance, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(81061, 81061)
 Here we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevelresistance states in the presence of gradually reversed ferroelectric domainsvia tunneling electro-resistance and tunneling magnetoresistance, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(81066, 81066)
 Here we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevelresistance states in the presence of gradually reversed ferroelectric domainsvia tunneling electro-resistance and tunneling magnetoresistance, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(81170, 81170)
The nonvolatile ferroelectric control in the MFTJ can be attributed to separatecontributions arising from two independent ferroelectric channels in the PZTinterlayer with opposite polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VSe2/MoS2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81495, 81501)
Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[208.0, 300, 'Kelvin', 4],[373.0, 2, 'D', 7]

W
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81527, 81527)
 Two-dimensional (2D) van der Waals (vdW) materials provide the possibility ofrealizing heterostructures with coveted properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 300, 'Kelvin', 3],[347.0, 2, 'D', 6]

W
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81571, 81571)
 Here, we report atheoretical investigation of the vdW magnetic tunnel junction (MTJ) based onVSe2/MoS2 heterojunction, where the VSe2 monolayer acts as the ferromagnet withthe room-temperature ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 300, 'Kelvin', 2],[303.0, 2, 'D', 5]

VSe2/MoS2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81590, 81596)
 Here, we report atheoretical investigation of the vdW magnetic tunnel junction (MTJ) based onVSe2/MoS2 heterojunction, where the VSe2 monolayer acts as the ferromagnet withthe room-temperature ferromagnetism.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[113.0, 300, 'Kelvin', 2],[278.0, 2, 'D', 5]

VSe2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81605, 81607)
 Here, we report atheoretical investigation of the vdW magnetic tunnel junction (MTJ) based onVSe2/MoS2 heterojunction, where the VSe2 monolayer acts as the ferromagnet withthe room-temperature ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 300, 'Kelvin', 2],[267.0, 2, 'D', 5]

SO
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81649, 81650)
 We propose the concept of spin-orbittorque (SOT) vdW MTJ with reliable reading and efficient writing operations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 300, 'Kelvin', 1],[224.0, 2, 'D', 4]

W
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81655, 81655)
 We propose the concept of spin-orbittorque (SOT) vdW MTJ with reliable reading and efficient writing operations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 300, 'Kelvin', 1],[219.0, 2, 'D', 4]

MoS2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81746, 81748)
 Thanks to the strong spin Hall conductivity of MoS2, SOT<missing VAR> is promisingfor the magnetization switching of VSe2 free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 300, 'Kelvin', 1],[126.0, 2, 'D', 2]

SO
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81751, 81752)
 Thanks to the strong spin Hall conductivity of MoS2, SOT<missing VAR> is promisingfor the magnetization switching of VSe2 free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 300, 'Kelvin', 1],[122.0, 2, 'D', 2]

VSe2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81770, 81772)
 Thanks to the strong spin Hall conductivity of MoS2, SOT<missing VAR> is promisingfor the magnetization switching of VSe2 free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 300, 'Kelvin', 1],[102.0, 2, 'D', 2]

SO
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81829, 81830)
 The SOT<missing VAR> vdW MTJ based on VSe2/MoS2provides desirable performance and experimental feasibility, offering newopportunities for 2D spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 300, 'Kelvin', 3],[44.0, 2, 'D', 0]

W
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81834, 81834)
 The SOT<missing VAR> vdW MTJ based on VSe2/MoS2provides desirable performance and experimental feasibility, offering newopportunities for 2D spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 300, 'Kelvin', 3],[40.0, 2, 'D', 0]

VSe2/MoS2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(81844, 81850)
 The SOT<missing VAR> vdW MTJ based on VSe2/MoS2provides desirable performance and experimental feasibility, offering newopportunities for 2D spintronics.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[135.0, 300, 'Kelvin', 3],[24.0, 2, 'D', 0]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(81945, 81945)
 Recent theoretical predictions and experimental demonstrations of a largetunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunneljunctions (AFMTJs) offer a new paradigm for information technologies where theAFM<missing VAR> Neel vector serves as a state variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 4, '%', 6]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(81956, 81956)
 Recent theoretical predictions and experimental demonstrations of a largetunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunneljunctions (AFMTJs) offer a new paradigm for information technologies where theAFM<missing VAR> Neel vector serves as a state variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 4, '%', 6]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(81982, 81982)
 Recent theoretical predictions and experimental demonstrations of a largetunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunneljunctions (AFMTJs) offer a new paradigm for information technologies where theAFM<missing VAR> Neel vector serves as a state variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 4, '%', 6]

N
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(81985, 81985)
 Recent theoretical predictions and experimental demonstrations of a largetunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunneljunctions (AFMTJs) offer a new paradigm for information technologies where theAFM<missing VAR> Neel vector serves as a state variable.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 4, '%', 6]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82055, 82055)
 Here, we predict the emergence of an extraordinary TMR (ETMR)effect in AFMTJs utilizing noncollinear AFM<missing VAR> antiperovskite X<missing VAR>NMn3 (X<missing VAR>  Ga,Sn,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 4, '%', 4]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82065, 82065)
 Here, we predict the emergence of an extraordinary TMR (ETMR)effect in AFMTJs utilizing noncollinear AFM<missing VAR> antiperovskite X<missing VAR>NMn3 (X<missing VAR>  Ga,Sn,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 4, '%', 4]

NMn3
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82071, 82073)
 Here, we predict the emergence of an extraordinary TMR (ETMR)effect in AFMTJs utilizing noncollinear AFM<missing VAR> antiperovskite X<missing VAR>NMn3 (X<missing VAR>  Ga,Sn,.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 4, '%', 4]

Ga
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82079, 82079)
 Here, we predict the emergence of an extraordinary TMR (ETMR)effect in AFMTJs utilizing noncollinear AFM<missing VAR> antiperovskite X<missing VAR>NMn3 (X<missing VAR>  Ga,Sn,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 4, '%', 4]

Sn
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82083, 82083)
 Here, we predict the emergence of an extraordinary TMR (ETMR)effect in AFMTJs utilizing noncollinear AFM<missing VAR> antiperovskite X<missing VAR>NMn3 (X<missing VAR>  Ga,Sn,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 4, '%', 4]

TiO3
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82101, 82103)
 electrodes and a perovskite oxide ATiO3 (A  Sr, Ba,.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 4, '%', 3]

Sr
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82109, 82109)
 electrodes and a perovskite oxide ATiO3 (A  Sr, Ba,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 4, '%', 3]

Ba
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82112, 82112)
 electrodes and a perovskite oxide ATiO3 (A  Sr, Ba,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 4, '%', 3]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82156, 82156)
 The ETMR effect stems from the perfectly spin-polarized electronicstates in the AFM<missing VAR> antiperovskites that can efficiently tunnel through thelow-decay-rate evanescent states of the perovskite oxide while preserving theirspin state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 4, '%', 1]

GaNMn3/SrTiO3/GaNMn3
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82208, 82221)
 Using an GaNMn3/SrTiO3/GaNMn3 (001) AFMTJ as arepresentative example, we demonstrate a giant TMR ratio exceeding 104%and originating from the ETMR effect.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, 4, '%', 0]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82228, 82228)
 Using an GaNMn3/SrTiO3/GaNMn3 (001) AFMTJ as arepresentative example, we demonstrate a giant TMR ratio exceeding 104%and originating from the ETMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 4, '%', 0]

N
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82305, 82305)
 These results are promising for theefficient detection and control of the Neel vector in AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 4, '%', 1]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(82313, 82313)
 These results are promising for theefficient detection and control of the Neel vector in AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 4, '%', 1]

In
###Low frequency noise characteristics of sub-micron magnetic tunnel junctions|B. Zhong,Y. Chen,S. Garzon,T. M. Crawford,R. A. Webb###
(82425, 82425)
 In mostcases, a Lorentzian-like shape with characteristic time between 0.1 and 10 msis observed, which indicates only a small number of fluctuators contribute tothe measured noise.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 200, 'kHz', 1],[36.0, 10, 'Kelvin', 1],[23.0, 0.1, 'and', 0],[24.0, 10, 'ms', 0]

At
###Low frequency noise characteristics of sub-micron magnetic tunnel junctions|B. Zhong,Y. Chen,S. Garzon,T. M. Crawford,R. A. Webb###
(82564, 82564)
 At small fields, where the noise from thefree layer is dominant, a linear relation between the measured noise andangular magnetoresistance susceptibility can be established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 200, 'kHz', 3],[175.0, 10, 'Kelvin', 3],[116.0, 0.1, 'and', 2],[115.0, 10, 'ms', 2]

In
###Tunable giant magnetoresistance in a single-molecule junction|Kai Yang,Hui Chen,Thomas Pope,Yibin Hu,Liwei Liu,Dongfei Wang,Lei Tao,Wende Xiao,Xiangmin Fei,Yu-Yang Zhang,Hong-Gang Luo,Shixuan Du,Tao Xiang,Werner A. Hofer,Hong-Jun Gao###
(82678, 82678)
 In magnetic moleculardevices, the spin degree-of-freedom can be used to this end since the magneticproperties of the magnetic ion centers fundamentally impact the transportthrough the molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 93, '%', 1]

In
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(83012, 83012)
 In magnetic nanostructures one usually uses a magnetic field to commutebetween two resistance (R) states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 6.9, '%', 4]

(CIS)
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(83104, 83108)
 Such Current Induced Switching (CIS) was recentlyobserved in thin magnetic tunnel junctions, and attributed to electromigrationof atoms into/out of the insulator.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 6.9, '%', 2]

MnIr/CoFe/AlO
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(83182, 83189)
 Here we study the Current InducedSwitching, electrical resistance, and magnetoresistance of thinMnIr/CoFe/AlOx<missing VAR>/CoFe tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[30.0, 6.9, '%', 1]

CoFe
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(83192, 83193)
 Here we study the Current InducedSwitching, electrical resistance, and magnetoresistance of thinMnIr/CoFe/AlOx<missing VAR>/CoFe tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 6.9, '%', 1]

CIS
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(83202, 83204)
 The CIS effect at room temperatureamounts to 6.9% R<missing VAR>-change between the high and low states and is attributed tonanostructural rearrangements of metallic ions in the electrode/barrierinterfaces.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 6.9, '%', 0]

V
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(83332, 83332)
 A low(high) energy barrier of sim0.13 e<missing VAR>V (sim0.85 e<missing VAR>V) was estimated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 6.9, '%', 2]

V
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(83339, 83339)
 A low(high) energy barrier of sim0.13 e<missing VAR>V (sim0.85 e<missing VAR>V) was estimated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 6.9, '%', 2]

CIS
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(83431, 83433)
 Measurements under an external magneticfield showed an additional intermediate R<missing VAR>-state due to the simultaneousconjugation of the MR (magnetic) and CIS (structural) effects.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 6.9, '%', 4]

MgO
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(83458, 83459)
Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain a Potential Pathway to Ultra-Energy-Efficient Memory Technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(83557, 83558)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(83577, 83577)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg1
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(83579, 83580)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb2
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(83583, 83584)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti0.3O3
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(83589, 83592)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.9090909090909092,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(83595, 83595)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(83597, 83597)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(83599, 83599)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(83820, 83821)
 Additionally, theadoption of crystalline MgO-based MTJ on piezoelectric layer lends itself tohigh TMR in the strain-mediated MRAM<missing VAR> devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(83896, 83896)
Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[384.0, 164, '%', 5],[405.0, 2, ',', 5],[495.0, 7, '%', 7],[523.0, 96, '%', 7]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(84012, 84012)
 Magnetic tunnel junction (MTJ) memory elements can be used forcomputation by manipulating a domain wall (D<missing VAR>W), a transition region betweenmagnetic domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 164, '%', 3],[289.0, 2, ',', 3],[379.0, 7, '%', 5],[407.0, 96, '%', 5]

S
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(84053, 84053)
 But, these devices have suffered from challenges spintransfer torque (STT) switching of a D<missing VAR>W requires high current, and the multipleetch steps needed to create an MTJ pillar on top of a D<missing VAR>W track has led toreduced tunnel magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 164, '%', 2],[248.0, 2, ',', 2],[338.0, 7, '%', 4],[366.0, 96, '%', 4]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(84065, 84065)
 But, these devices have suffered from challenges spintransfer torque (STT) switching of a D<missing VAR>W requires high current, and the multipleetch steps needed to create an MTJ pillar on top of a D<missing VAR>W track has led toreduced tunnel magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 164, '%', 2],[236.0, 2, ',', 2],[326.0, 7, '%', 4],[354.0, 96, '%', 4]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(84108, 84108)
 But, these devices have suffered from challenges spintransfer torque (STT) switching of a D<missing VAR>W requires high current, and the multipleetch steps needed to create an MTJ pillar on top of a D<missing VAR>W track has led toreduced tunnel magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 164, '%', 2],[193.0, 2, ',', 2],[283.0, 7, '%', 4],[311.0, 96, '%', 4]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(84182, 84182)
 Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 164, '%', 0],[119.0, 2, ',', 0],[209.0, 7, '%', 2],[237.0, 96, '%', 2]

P
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(84230, 84230)
 Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 164, '%', 0],[71.0, 2, ',', 0],[161.0, 7, '%', 2],[189.0, 96, '%', 2]

SO
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(84243, 84244)
 Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 164, '%', 0],[57.0, 2, ',', 0],[147.0, 7, '%', 2],[175.0, 96, '%', 2]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(84401, 84401)
 Device initialization variation inswitching voltage is shown to be curtailed to 7% by controlling the D<missing VAR>W initialposition, which we show corresponds to 96% accuracy in a D<missing VAR>W-MTJ full addersimulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 164, '%', 2],[100.0, 2, ',', 2],[10.0, 7, '%', 0],[18.0, 96, '%', 0]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(84429, 84429)
 Device initialization variation inswitching voltage is shown to be curtailed to 7% by controlling the D<missing VAR>W initialposition, which we show corresponds to 96% accuracy in a D<missing VAR>W-MTJ full addersimulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 164, '%', 2],[128.0, 2, ',', 2],[38.0, 7, '%', 0],[10.0, 96, '%', 0]

(SOC)
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84527, 84531)
 Heavy metals with strong spin-orbit coupling (SOC) have been employed togenerate spin current to control the magnetization dynamics by spin-orbittorque (SOT).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84568, 84569)
 Heavy metals with strong spin-orbit coupling (SOC) have been employed togenerate spin current to control the magnetization dynamics by spin-orbittorque (SOT).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84584, 84585)
 Magnetic tunnel junction based on SOT<missing VAR> (SOT-MTJ) is a promisingapplication with efficient writing operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84589, 84590)
 Magnetic tunnel junction based on SOT<missing VAR> (SOT-MTJ) is a promisingapplication with efficient writing operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84619, 84620)
 Unfortunately, SOT-MTJ faces thelow tunneling magnetoresistance (TMR) problem.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84647, 84647)
 In this work, we present an abinitio calculation on the TMR in SOT-MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84677, 84678)
 In this work, we present an abinitio calculation on the TMR in SOT-MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84707, 84708)
 It is demonstrated that TMR would beenhanced by SOT-MTJ symmetry structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84734, 84734)
 The symmetrization induces interfacialresonant states (IR<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84742, 84742)
 When IR<missing VAR>Ss match identical resonances at the oppositebarrier interface, resonant tunneling occurs in SOT-MTJ, which significantlycontributes to the conductance in parallel configuration and improves TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84772, 84773)
 When IR<missing VAR>Ss match identical resonances at the oppositebarrier interface, resonant tunneling occurs in SOT-MTJ, which significantlycontributes to the conductance in parallel configuration and improves TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84904, 84905)
 This workwould benefit the TMR optimization in SOT-MTJ, as well as the SOT<missing VAR> spintronicsdevice.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(84921, 84922)
 This workwould benefit the TMR optimization in SOT-MTJ, as well as the SOT<missing VAR> spintronicsdevice.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(84962, 84962)
 In large magnetoresistance devices spin torque-induced changes in resistancecan produce G<missing VAR>Hz current and voltage oscillations which can affect magnetizationreversal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(85010, 85010)
 In addition, capacitive shunting in large resistance devices canfurther reduce the current, adversely affecting spin torque switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(P)
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(85143, 85145)
 While for spin valves parallel (P) toanti-parallel (AP) switching is adversely affected by the resistance feedbackdue to saturation of the spin torque, in low resistance magnetic tunneljunctions P-AP switching is enhanced.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(85156, 85156)
 While for spin valves parallel (P) toanti-parallel (AP) switching is adversely affected by the resistance feedbackdue to saturation of the spin torque, in low resistance magnetic tunneljunctions P-AP switching is enhanced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(85204, 85204)
 While for spin valves parallel (P) toanti-parallel (AP) switching is adversely affected by the resistance feedbackdue to saturation of the spin torque, in low resistance magnetic tunneljunctions P-AP switching is enhanced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(85207, 85207)
 While for spin valves parallel (P) toanti-parallel (AP) switching is adversely affected by the resistance feedbackdue to saturation of the spin torque, in low resistance magnetic tunneljunctions P-AP switching is enhanced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(85275, 85275)
 We study the effect of resistancefeedback on the switching time of MTJs, and show that magnetization switchingis only affected by capacitive shunting in the p<missing VAR>F range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85308, 85308)
First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85314, 85315)
First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85348, 85348)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85354, 85354)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85381, 85382)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85398, 85398)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85405, 85405)
 For bcc-Co, Tc1420 K is predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc1420
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85408, 85409)
 For bcc-Co, Tc1420 K is predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85411, 85411)
 For bcc-Co, Tc1420 K is predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85437, 85437)
 This would be the highest Curietemperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunneljunctions offer high magnetoresistance ratios even at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/MgO
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85448, 85451)
 This would be the highest Curietemperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunneljunctions offer high magnetoresistance ratios even at room temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(85455, 85455)
 This would be the highest Curietemperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunneljunctions offer high magnetoresistance ratios even at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnSe
###Resonant tunneling magnetoresistance in epitaxial metal-semiconductor heterostructures|J. Varalda,A. J. A. de Oliveira,D. H. Mosca,J. -M. George,M. Eddrief,M. Marangolo,V. H. Etgens###
(85575, 85576)
 We report on resonant tunneling magnetoresistance via localized statesthrough a ZnSe semiconducting barrier which can reverse the sign of theeffective spin polarization of tunneling electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/ZnSe/Fe
###Resonant tunneling magnetoresistance in epitaxial metal-semiconductor heterostructures|J. Varalda,A. J. A. de Oliveira,D. H. Mosca,J. -M. George,M. Eddrief,M. Marangolo,V. H. Etgens###
(85617, 85622)
 Experiments performed onFe/ZnSe/Fe planar junctions have shown that positive, negative or even itssign-reversible magnetoresistance can be obtained, depending on the biasvoltage, the energy of localized states in the ZnSe barrier and spatialsymmetry.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

ZnSe
###Resonant tunneling magnetoresistance in epitaxial metal-semiconductor heterostructures|J. Varalda,A. J. A. de Oliveira,D. H. Mosca,J. -M. George,M. Eddrief,M. Marangolo,V. H. Etgens###
(85685, 85686)
 Experiments performed onFe/ZnSe/Fe planar junctions have shown that positive, negative or even itssign-reversible magnetoresistance can be obtained, depending on the biasvoltage, the energy of localized states in the ZnSe barrier and spatialsymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ON
###Response of a spin valve to a spin battery|Khuôn-Viêt Pham###
(85792, 85793)
 It is shown that spin valves under suitable symmetry conditions exhibit anON-OFF response to a spin battery, and are therefore perfect spin transistors.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OFF
###Response of a spin valve to a spin battery|Khuôn-Viêt Pham###
(85795, 85797)
 It is shown that spin valves under suitable symmetry conditions exhibit anON-OFF response to a spin battery, and are therefore perfect spin transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Response of a spin valve to a spin battery|Khuôn-Viêt Pham###
(85896, 85896)
While a spin valve driven by a charge battery displays the usual GMR (GiantMagneto-Resistance), this means that a pure spin current or pure spinaccumulation can generate an infinite magnetoresistance (IMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Response of a spin valve to a spin battery|Khuôn-Viêt Pham###
(85915, 85917)
 Magnetic tunneljunctions as well as CPP (current perpendicular to plane) or CIP (current inplane) metallic trilayers are discussed.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Response of a spin valve to a spin battery|Khuôn-Viêt Pham###
(85931, 85933)
 Magnetic tunneljunctions as well as CPP (current perpendicular to plane) or CIP (current inplane) metallic trilayers are discussed.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al2O3/Si/Al2O3
###Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier|R. Guerrero,F. G. Aliev,R. Villar,T. Santos,J. Moodera,V. K. Dugaev,J. Barnas###
(85965, 85977)
Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[132.0, 80, 'K', 4],[137.0, 1, 'monolayer', 4],[208.0, 3, 'D', 6]

In
###Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier|R. Guerrero,F. G. Aliev,R. Villar,T. Santos,J. Moodera,V. K. Dugaev,J. Barnas###
(86251, 86251)
 Inthe high thickness case, up to 1.8AA, we have introduced a phenomenologicalparameter, which reflects the number of single levels on the total density ofsilicon atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 80, 'K', 4],[137.0, 1, 'monolayer', 4],[66.0, 3, 'D', 2]

CoFe(B)
###The Kondo effect in magnetic impurities and ferromagnetic contacts|Hyunsoo Yang,See-Hun Yang,Grzegorz Ilnicki,Jan Martinek,Stuart S. P. Parkin###
(86378, 86382)
 Planar macroscopic magnetic tunnel junctions exhibit well defined zero biasanomalies when a thin layer of ferromagnetic CoFe(B) nanodots is insertedwithin a MgO based tunnel barrier.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###The Kondo effect in magnetic impurities and ferromagnetic contacts|Hyunsoo Yang,See-Hun Yang,Grzegorz Ilnicki,Jan Martinek,Stuart S. P. Parkin###
(86395, 86396)
 Planar macroscopic magnetic tunnel junctions exhibit well defined zero biasanomalies when a thin layer of ferromagnetic CoFe(B) nanodots is insertedwithin a MgO based tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Micromagnetic study of electrical-field-assisted magnetization switching in MTJ devices|M. Carpentieri,R. Tomasello,M. Ricci,P. Burrascano,G. Finocchio###
(86649, 86650)
 Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates asbuilding block of Spin Transfer Torque (STT) magnetoresistive memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 106, 'A', 1],[109.0, 11, ',', 5],[116.0, -68, ',', 5]

S
###Micromagnetic study of electrical-field-assisted magnetization switching in MTJ devices|M. Carpentieri,R. Tomasello,M. Ricci,P. Burrascano,G. Finocchio###
(86682, 86682)
 Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates asbuilding block of Spin Transfer Torque (STT) magnetoresistive memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 106, 'A', 1],[77.0, 11, ',', 5],[84.0, -68, ',', 5]

S
###Micromagnetic study of electrical-field-assisted magnetization switching in MTJ devices|M. Carpentieri,R. Tomasello,M. Ricci,P. Burrascano,G. Finocchio###
(86707, 86707)
However, up to now, the only STT is not enough to achieve switching currentdensity below 106 A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 106, 'A', 0],[52.0, 11, ',', 4],[59.0, -68, ',', 4]

MgO
###Spin-transfer dynamics in MgO-based magnetic tunnel junctions with an out-of-plane magnetized free layer and an in-plane polarizer|Ewa Kowalska,Volker Sluka,Attila Kákay,Ciarán Fowley,Jürgen Lindner,Jürgen Fassbender,Alina M. Deac###
(86913, 86914)
Spin-transfer dynamics in MgO-based magnetic tunnel junctions with an out-of-plane magnetized free layer and an in-plane polarizer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin-transfer dynamics in MgO-based magnetic tunnel junctions with an out-of-plane magnetized free layer and an in-plane polarizer|Ewa Kowalska,Volker Sluka,Attila Kákay,Ciarán Fowley,Jürgen Lindner,Jürgen Fassbender,Alina M. Deac###
(86979, 86980)
 Here, we present an analytical and numerical model describing themagnetization dynamics in MgO-based spin-torque nano-oscillators with anin-plane magnetized polarizer and an out-of-plane free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-transfer dynamics in MgO-based magnetic tunnel junctions with an out-of-plane magnetized free layer and an in-plane polarizer|Ewa Kowalska,Volker Sluka,Attila Kákay,Ciarán Fowley,Jürgen Lindner,Jürgen Fassbender,Alina M. Deac###
(87150, 87150)
 In a morerealistic approach, we include the bias dependence of the tunnelmagnetoresistance, which is assumed empirically to be a piecewise linearfunction of the applied voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(87769, 87769)
 All optical switching (AOS) of the magnetization in synthetic ferrimagneticPt/Co/Gd stacks has received considerable interest due to its high potentialtowards integration with spintronic devices, such as magnetic tunnel junctions(MTJs), to enable ultrafast memory applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 100, 'C', 4],[310.0, 300, 'C', 4],[318.0, 28, '%', 5],[340.0, 300, 'C', 5]

Pt/Co/Gd
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(87785, 87789)
 All optical switching (AOS) of the magnetization in synthetic ferrimagneticPt/Co/Gd stacks has received considerable interest due to its high potentialtowards integration with spintronic devices, such as magnetic tunnel junctions(MTJs), to enable ultrafast memory applications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[287.0, 100, 'C', 4],[290.0, 300, 'C', 4],[298.0, 28, '%', 5],[320.0, 300, 'C', 5]

OS
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(87903, 87904)
 However, with integrating AOS with an MTJ in prospect, theannealing effects on single-pulse AOS and domain wall (D<missing VAR>W) dynamics in thePt/Co/Gd stacks havent<missing VAR> been systematically investigated yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 100, 'C', 2],[175.0, 300, 'C', 2],[183.0, 28, '%', 3],[205.0, 300, 'C', 3]

OS
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(87933, 87934)
 However, with integrating AOS with an MTJ in prospect, theannealing effects on single-pulse AOS and domain wall (D<missing VAR>W) dynamics in thePt/Co/Gd stacks havent<missing VAR> been systematically investigated yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 100, 'C', 2],[145.0, 300, 'C', 2],[153.0, 28, '%', 3],[175.0, 300, 'C', 3]

W
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(87944, 87944)
 However, with integrating AOS with an MTJ in prospect, theannealing effects on single-pulse AOS and domain wall (D<missing VAR>W) dynamics in thePt/Co/Gd stacks havent<missing VAR> been systematically investigated yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 100, 'C', 2],[135.0, 300, 'C', 2],[143.0, 28, '%', 3],[165.0, 300, 'C', 3]

Pt/Co/Gd
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(87954, 87958)
 However, with integrating AOS with an MTJ in prospect, theannealing effects on single-pulse AOS and domain wall (D<missing VAR>W) dynamics in thePt/Co/Gd stacks havent<missing VAR> been systematically investigated yet.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[118.0, 100, 'C', 2],[121.0, 300, 'C', 2],[129.0, 28, '%', 3],[151.0, 300, 'C', 3]

In
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(87974, 87974)
 In this study, weexperimentally explore the annealing effect on AOS and field-induced D<missing VAR>W motionin Pt/Co/Gd stacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 100, 'C', 1],[105.0, 300, 'C', 1],[113.0, 28, '%', 2],[135.0, 300, 'C', 2]

OS
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(87997, 87998)
 In this study, weexperimentally explore the annealing effect on AOS and field-induced D<missing VAR>W motionin Pt/Co/Gd stacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 100, 'C', 1],[81.0, 300, 'C', 1],[89.0, 28, '%', 2],[111.0, 300, 'C', 2]

W
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(88007, 88007)
 In this study, weexperimentally explore the annealing effect on AOS and field-induced D<missing VAR>W motionin Pt/Co/Gd stacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 100, 'C', 1],[72.0, 300, 'C', 1],[80.0, 28, '%', 2],[102.0, 300, 'C', 2]

Pt/Co/Gd
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(88014, 88018)
 In this study, weexperimentally explore the annealing effect on AOS and field-induced D<missing VAR>W motionin Pt/Co/Gd stacks.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 100, 'C', 1],[61.0, 300, 'C', 1],[69.0, 28, '%', 2],[91.0, 300, 'C', 2]

(F0)
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(88037, 88040)
 The results show that the threshold fluence (F0) for AOSis reduced significantly as a function of annealing temperature (T<missing VAR>a) rangingfrom 100C to 300C.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 100, 'C', 0],[39.0, 300, 'C', 0],[47.0, 28, '%', 1],[69.0, 300, 'C', 1]

OS
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(88045, 88046)
 The results show that the threshold fluence (F0) for AOSis reduced significantly as a function of annealing temperature (T<missing VAR>a) rangingfrom 100C to 300C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 100, 'C', 0],[33.0, 300, 'C', 0],[41.0, 28, '%', 1],[63.0, 300, 'C', 1]

F0
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(88094, 88095)
 Specifically, a 28% reduction of F0 can be observed uponannealing at 300C, which is a critical T<missing VAR>a for MTJ fabrication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 100, 'C', 1],[15.0, 300, 'C', 1],[7.0, 28, '%', 0],[14.0, 300, 'C', 0]

W
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(88153, 88153)
 Lastly, we alsodemonstrate a significant increase of the D<missing VAR>W velocity in the creep regime uponannealing, which is attributed to annealing-induced Co/Gd interfaceintermixing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 100, 'C', 2],[74.0, 300, 'C', 2],[66.0, 28, '%', 1],[44.0, 300, 'C', 1]

Co/Gd
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(88183, 88185)
 Lastly, we alsodemonstrate a significant increase of the D<missing VAR>W velocity in the creep regime uponannealing, which is attributed to annealing-induced Co/Gd interfaceintermixing.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[107.0, 100, 'C', 2],[104.0, 300, 'C', 2],[96.0, 28, '%', 1],[74.0, 300, 'C', 1]

Pt/Co/Gd
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(88203, 88207)
 Our findings show that annealed Pt/Co/Gd system facilitatesultrafast and energy-efficient AOS, as well as enhanced D<missing VAR>W velocity, which ishighly suitable towards opto-spintronic memory applications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[127.0, 100, 'C', 3],[124.0, 300, 'C', 3],[116.0, 28, '%', 2],[94.0, 300, 'C', 2]

OS
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(88223, 88224)
 Our findings show that annealed Pt/Co/Gd system facilitatesultrafast and energy-efficient AOS, as well as enhanced D<missing VAR>W velocity, which ishighly suitable towards opto-spintronic memory applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 100, 'C', 3],[144.0, 300, 'C', 3],[136.0, 28, '%', 2],[114.0, 300, 'C', 2]

W
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(88236, 88236)
 Our findings show that annealed Pt/Co/Gd system facilitatesultrafast and energy-efficient AOS, as well as enhanced D<missing VAR>W velocity, which ishighly suitable towards opto-spintronic memory applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 100, 'C', 3],[157.0, 300, 'C', 3],[149.0, 28, '%', 2],[127.0, 300, 'C', 2]

Fe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(88305, 88305)
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 95, '%', 2],[220.0, 1.26, ',', 3],[526.0, 1000, '%', 9]

Cr
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(88307, 88307)
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 95, '%', 2],[218.0, 1.26, ',', 3],[524.0, 1000, '%', 9]

Fe2CrTe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(88382, 88385)
 Using electronic structure calculations based on density functional theory,we predict and study the structural, mechanical, electronic, magnetic andtransport properties of a new full Heusler chalcogenide, namely, Fe2CrTe,both in bulk and heterostructure form.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 95, '%', 1],[140.0, 1.26, ',', 2],[446.0, 1000, '%', 8]

H
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(88419, 88419)
 The system shows a ferromagnetic andhalf-metallic(HM) like behavior, with a very high (about 95%) spin polarizationat the Fermi level, in its cubic phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 95, '%', 0],[106.0, 1.26, ',', 1],[412.0, 1000, '%', 7]

H
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(88675, 88675)
 Due to the HM<missing VAR>-like behavior of the cubic phase andkeeping in mind the practical aspects, we probe the effect of strain as well assubstrate on various physical properties of this alloy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 95, '%', 5],[150.0, 1.26, ',', 4],[156.0, 1000, '%', 2]

Fe2CrTe/MgO/Fe2CrTe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(88751, 88762)
 Transmission profile ofthe Fe2CrTe/MgO/Fe2CrTe heterojunction has been calculated to probe it asa magnetic tunneling junction (MTJ) material in both the cubic and tetragonalphases.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[312.0, 95, '%', 6],[226.0, 1.26, ',', 5],[69.0, 1000, '%', 1]

Pt/Co/B
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(88944, 88948)
 The combination of spin-orbit coupling driven effects and multiferroictunneling properties was explored experimentally in thin Pt/Co/BT<missing VAR>O/LSMOmultilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(88950, 88950)
 The combination of spin-orbit coupling driven effects and multiferroictunneling properties was explored experimentally in thin Pt/Co/BT<missing VAR>O/LSMOmultilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(88955, 88955)
 The combination of spin-orbit coupling driven effects and multiferroictunneling properties was explored experimentally in thin Pt/Co/BT<missing VAR>O/LSMOmultilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(88969, 88969)
 The presence of a Pt heavy metal allows for the spincurrent-induced magnetization precession of Co upon radio-frequency chargecurrent injection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(88994, 88994)
 The presence of a Pt heavy metal allows for the spincurrent-induced magnetization precession of Co upon radio-frequency chargecurrent injection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(89018, 89018)
 The utilization of a BT<missing VAR>O ferroelectric tunnel barrierseparating the Co and LSMO ferromagnetic electrodes gives rise to bothtunneling-magnetoresistance and electroresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(89020, 89020)
 The utilization of a BT<missing VAR>O ferroelectric tunnel barrierseparating the Co and LSMO ferromagnetic electrodes gives rise to bothtunneling-magnetoresistance and electroresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(89033, 89033)
 The utilization of a BT<missing VAR>O ferroelectric tunnel barrierseparating the Co and LSMO ferromagnetic electrodes gives rise to bothtunneling-magnetoresistance and electroresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(89040, 89040)
 The utilization of a BT<missing VAR>O ferroelectric tunnel barrierseparating the Co and LSMO ferromagnetic electrodes gives rise to bothtunneling-magnetoresistance and electroresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Pt
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(89090, 89092)
 Using the spin-orbit torqueferromagnetic resonance, the maganetization dynamics of the Co/Pt bilayers wasstudied at room temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(89145, 89145)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(89153, 89153)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(89184, 89184)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(89197, 89197)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(89208, 89208)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(89210, 89210)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/O/F
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(89266, 89270)
 The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (Fs<missing VAR> areferromagnetic layers and O is an oxide spacer) in the presence of magneticimpurities within the barrier, is investigated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(89278, 89278)
 The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (Fs<missing VAR> areferromagnetic layers and O is an oxide spacer) in the presence of magneticimpurities within the barrier, is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(89290, 89290)
 The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (Fs<missing VAR> areferromagnetic layers and O is an oxide spacer) in the presence of magneticimpurities within the barrier, is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S1
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(89435, 89436)
 Consequently, the resonance levels of the systemformed by a tunneling electron and a paramagnetic impurity with spin S1, are asextet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(89447, 89447)
 As a result the resonant tunneling depends on the direction of thetunneling electron spin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(89479, 89479)
 At low temperatures and zero bias voltage the TMR ofthe considered system may be larger than TMR of the same structure withoutparamagnetic impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I(V)
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(89647, 89650)
 It is also shown thatasymmetry in the location of the impurities within the barrier can lead toasymmetry in I(V) characteristics of impurity assisted current and twomechanisms responsible for the origin of this effect are established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoPt
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(90064, 90065)
Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(90073, 90074)
Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoPt/ZnO
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(90150, 90154)
 By first-principlescalculations, we show a large nonvolatile control of magnetic anisotropy inferromagnetic/ferroelectric CoPt/ZnO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

ZnO
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(90172, 90173)
 Using the switched electricpolarization of ZnO, the density-of-states and magnetic anisotropy at the CoPtsurface show a large change.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoPt
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(90194, 90195)
 Using the switched electricpolarization of ZnO, the density-of-states and magnetic anisotropy at the CoPtsurface show a large change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Pt
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(90217, 90219)
 Due to a strong Co/Pt orbitals hybridization and alarge spin-orbit coupling, a large control of magnetic anisotropy was found.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoPt/Mg
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(90284, 90287)
 Weexperimentally measured the change of effective anisotropy by tunnelingresistance measurements in CoPt/Mg-doped ZnO/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

ZnO/Co
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(90291, 90294)
 Weexperimentally measured the change of effective anisotropy by tunnelingresistance measurements in CoPt/Mg-doped ZnO/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Emergent Spin-Filter at the interface between Ferromagnetic and Insulating Layered Oxides|Yaohua Liu,F. A. Cuellar,Z. Sefrioui,J. W. Freeland,M. R. Fitzsimmons,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(90414, 90420)
 We report a strong effect of interface-induced magnetization on the transportproperties of magnetic tunnel junctions consisting of ferromagnetic manganiteLa0.7Ca0.3MnO3 and insulating cuprate PrBa2Cu3O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrBa2Cu3O7
###Emergent Spin-Filter at the interface between Ferromagnetic and Insulating Layered Oxides|Yaohua Liu,F. A. Cuellar,Z. Sefrioui,J. W. Freeland,M. R. Fitzsimmons,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(90428, 90434)
 We report a strong effect of interface-induced magnetization on the transportproperties of magnetic tunnel junctions consisting of ferromagnetic manganiteLa0.7Ca0.3MnO3 and insulating cuprate PrBa2Cu3O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Emergent Spin-Filter at the interface between Ferromagnetic and Insulating Layered Oxides|Yaohua Liu,F. A. Cuellar,Z. Sefrioui,J. W. Freeland,M. R. Fitzsimmons,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(90552, 90552)
 Interestingly, this anomalous behaviorcan be attributed to the competition between the positive spin polarization ofthe manganite contacts and the negative spin-filter effect from theinterface-induced Cu magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl/MgO/CoFe
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(90581, 90590)
Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[131.0, 3.8, '%', 2]

MgO
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(90602, 90603)
Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 3.8, '%', 2]

Co2FeAl/MgO/Co50Fe50
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(90635, 90646)
 We report on spin polarization reduction by incoherent tunneling in realisticsingle crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared toreference Fe/MgO/Fe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[75.0, 3.8, '%', 1]

Fe/MgO/Fe
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(90667, 90672)
 We report on spin polarization reduction by incoherent tunneling in realisticsingle crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared toreference Fe/MgO/Fe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[49.0, 3.8, '%', 1]

MgO
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(90712, 90713)
 A large density of misfit dislocations in the Heuslerbased MTJs has been insured by a thick MgO barrier and its 3.8% latticemismatch with the Co2FeAl electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3.8, '%', 0]

Co2FeAl
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(90733, 90736)
 A large density of misfit dislocations in the Heuslerbased MTJs has been insured by a thick MgO barrier and its 3.8% latticemismatch with the Co2FeAl electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3.8, '%', 0]

MgO
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(90964, 90965)
 This affects the symmetry filtering efficiency of the Delta1 statesacross the (100) MgO barriers and reduces the associated effective tunnelingpolarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 3.8, '%', 6]

MgO
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(91000, 91001)
 Secondly, dislocations provide localized states within the MgOgap.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 3.8, '%', 7]

Co
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91088, 91088)
First-principles study of Co concentration and interfacial resonance states in Fe1-xCox<missing VAR> magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, -20, '%', 3],[313.0, 10, 'x', 6]

Fe1-xCo
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91102, 91106)
First-principles study of Co concentration and interfacial resonance states in Fe1-xCox<missing VAR> magnetic tunnel junctions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[139.0, -20, '%', 3],[295.0, 10, 'x', 6]

Co
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91120, 91120)
 The optimal Co concentration in Fe1-xCox<missing VAR>/MgO magnetic tunneljunctions (MTJs) that maximizes tunneling magnetoresistance (TMR) is stillunder investigation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, -20, '%', 2],[281.0, 10, 'x', 5]

Fe1-xCo
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91126, 91130)
 The optimal Co concentration in Fe1-xCox<missing VAR>/MgO magnetic tunneljunctions (MTJs) that maximizes tunneling magnetoresistance (TMR) is stillunder investigation.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[115.0, -20, '%', 2],[271.0, 10, 'x', 5]

MgO
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91133, 91134)
 The optimal Co concentration in Fe1-xCox<missing VAR>/MgO magnetic tunneljunctions (MTJs) that maximizes tunneling magnetoresistance (TMR) is stillunder investigation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, -20, '%', 2],[267.0, 10, 'x', 5]

VC
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91214, 91215)
 We perform a first-principles transport study on MTJsusing disordered electrodes modeled using the virtual crystal approximation(VCA) and ordered alloys with various MgO barrier thicknesses.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, -20, '%', 1],[186.0, 10, 'x', 4]

MgO
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91229, 91230)
 We perform a first-principles transport study on MTJsusing disordered electrodes modeled using the virtual crystal approximation(VCA) and ordered alloys with various MgO barrier thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, -20, '%', 1],[171.0, 10, 'x', 4]

Co
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91249, 91249)
 We find that10-20% Co concentration maximizes TMR using VCA to represent disorder in theelectrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, -20, '%', 0],[152.0, 10, 'x', 3]

VC
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91261, 91262)
 We find that10-20% Co concentration maximizes TMR using VCA to represent disorder in theelectrodes.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, -20, '%', 0],[139.0, 10, 'x', 3]

I
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91309, 91309)
 This TMR peak arises due to a minority d<missing VAR>-type interfacial resonancestate (IR<missing VAR>S) that becomes filled with small Co doping, leading to a decrease inantiparallel conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, -20, '%', 1],[92.0, 10, 'x', 2]

S
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91311, 91311)
 This TMR peak arises due to a minority d<missing VAR>-type interfacial resonancestate (IR<missing VAR>S) that becomes filled with small Co doping, leading to a decrease inantiparallel conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, -20, '%', 1],[90.0, 10, 'x', 2]

Co
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91324, 91324)
 This TMR peak arises due to a minority d<missing VAR>-type interfacial resonancestate (IR<missing VAR>S) that becomes filled with small Co doping, leading to a decrease inantiparallel conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, -20, '%', 1],[77.0, 10, 'x', 2]

Fe1-xCo
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91351, 91355)
 Calculations with ordered Fe1-xCox<missing VAR>electrodes confirm the filling of this minority d<missing VAR>-type IR<missing VAR>S for small Coconcentrations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[106.0, -20, '%', 2],[46.0, 10, 'x', 1]

I
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91377, 91377)
 Calculations with ordered Fe1-xCox<missing VAR>electrodes confirm the filling of this minority d<missing VAR>-type IR<missing VAR>S for small Coconcentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, -20, '%', 2],[24.0, 10, 'x', 1]

S
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91379, 91379)
 Calculations with ordered Fe1-xCox<missing VAR>electrodes confirm the filling of this minority d<missing VAR>-type IR<missing VAR>S for small Coconcentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, -20, '%', 2],[22.0, 10, 'x', 1]

Co
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91385, 91385)
 Calculations with ordered Fe1-xCox<missing VAR>electrodes confirm the filling of this minority d<missing VAR>-type IR<missing VAR>S for small Coconcentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, -20, '%', 2],[16.0, 10, 'x', 1]

In
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91391, 91391)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, -20, '%', 3],[10.0, 10, 'x', 0]

VC
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91408, 91409)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, -20, '%', 3],[7.0, 10, 'x', 0]

Fe1-xCo
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91425, 91429)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[180.0, -20, '%', 3],[24.0, 10, 'x', 0]

MgO
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91432, 91433)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, -20, '%', 3],[31.0, 10, 'x', 0]

I
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91455, 91455)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, -20, '%', 3],[54.0, 10, 'x', 0]

S
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91457, 91457)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, -20, '%', 3],[56.0, 10, 'x', 0]

VC
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91486, 91487)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, -20, '%', 3],[85.0, 10, 'x', 0]

I
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91521, 91521)
 Theseresults explain recent experimental findings and provide implications for theimpact of IR<missing VAR>S on conductance and TMR in Fe1-xCox<missing VAR>/MgO tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, -20, '%', 4],[120.0, 10, 'x', 1]

S
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91523, 91523)
 Theseresults explain recent experimental findings and provide implications for theimpact of IR<missing VAR>S on conductance and TMR in Fe1-xCox<missing VAR>/MgO tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, -20, '%', 4],[122.0, 10, 'x', 1]

Fe1-xCo
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91537, 91541)
 Theseresults explain recent experimental findings and provide implications for theimpact of IR<missing VAR>S on conductance and TMR in Fe1-xCox<missing VAR>/MgO tunnel junctions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[292.0, -20, '%', 4],[136.0, 10, 'x', 1]

MgO
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(91544, 91545)
 Theseresults explain recent experimental findings and provide implications for theimpact of IR<missing VAR>S on conductance and TMR in Fe1-xCox<missing VAR>/MgO tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, -20, '%', 4],[143.0, 10, 'x', 1]

B
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91583, 91583)
 Using the Landauer-Butikker formalism, we study the graphenemagneto-transport in the presence of Rashba spin-orbit interaction (R<missing VAR>SOI).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91622, 91622)
 Using the Landauer-Butikker formalism, we study the graphenemagneto-transport in the presence of Rashba spin-orbit interaction (R<missing VAR>SOI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91663, 91665)
 Weshow that the angle resolved transmission probability in the proposedstructures can be tuned by the R<missing VAR>SOI strength.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(P)
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91689, 91691)
 The transmission spectrum showKlein tunneling in the parallel (P) magnetization configuration which can beblocked by the R<missing VAR>SOI.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91711, 91713)
 The transmission spectrum showKlein tunneling in the parallel (P) magnetization configuration which can beblocked by the R<missing VAR>SOI.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91736, 91736)
 This effect is also observable for the anti-parallel (AP)magnetization configuration in different incident angle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91788, 91790)
 The numerical resultsshows that the spin-polarized conductance strongly depends on the strength ofthe R<missing VAR>SOI and can be generated by tuning the magnetic exchange field and R<missing VAR>SOIstrength.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91815, 91817)
 The numerical resultsshows that the spin-polarized conductance strongly depends on the strength ofthe R<missing VAR>SOI and can be generated by tuning the magnetic exchange field and R<missing VAR>SOIstrength.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91853, 91854)
 This spin-polarized conductance is a sensitive oscillatory functionof the thickness of the R<missing VAR>SO region.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91910, 91910)
 Because of the spin-flip effect, thejunction shows a spin-valve effect with large and negative magnetoresistance(MR) and spin-magnetoresistance (SMR) in the presence of R<missing VAR>SOI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91924, 91926)
 Because of the spin-flip effect, thejunction shows a spin-valve effect with large and negative magnetoresistance(MR) and spin-magnetoresistance (SMR) in the presence of R<missing VAR>SOI.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(91934, 91936)
 When the R<missing VAR>SOI ison, the frequency and amplitude of shot-noise and Fano factors<missing VAR> oscillationsare also increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92096, 92099)
 Complex oxide systems have attracted considerable attention because of theirfascinating properties, including the magnetic ordering at the conductinginterface between two band insulators, such as LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 10, 'K', 2]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92104, 92104)
 Complex oxide systems have attracted considerable attention because of theirfascinating properties, including the magnetic ordering at the conductinginterface between two band insulators, such as LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 10, 'K', 2]

SrTiO3
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92109, 92112)
 Complex oxide systems have attracted considerable attention because of theirfascinating properties, including the magnetic ordering at the conductinginterface between two band insulators, such as LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 10, 'K', 2]

S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92115, 92115)
 Complex oxide systems have attracted considerable attention because of theirfascinating properties, including the magnetic ordering at the conductinginterface between two band insulators, such as LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 10, 'K', 2]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92117, 92117)
 Complex oxide systems have attracted considerable attention because of theirfascinating properties, including the magnetic ordering at the conductinginterface between two band insulators, such as LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 10, 'K', 2]

O/S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92147, 92149)
However, the manipulation of the spin degree of freedom at the L<missing VAR>AO/ST<missing VAR>Oheterointerface has remained elusive.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[98.0, 10, 'K', 1]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92151, 92151)
However, the manipulation of the spin degree of freedom at the L<missing VAR>AO/ST<missing VAR>Oheterointerface has remained elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 10, 'K', 1]

Co
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92185, 92185)
 Here, we have fabricated hybrid magnetictunnel junctions consisting of Co and L<missing VAR>AO/ST<missing VAR>O ferromagnets with the insertionof a Ti layer in between, which clearly exhibit magnetic switching and thetunnelling magnetoresistance (TMR) effect below 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 10, 'K', 0]

O/S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92191, 92193)
 Here, we have fabricated hybrid magnetictunnel junctions consisting of Co and L<missing VAR>AO/ST<missing VAR>O ferromagnets with the insertionof a Ti layer in between, which clearly exhibit magnetic switching and thetunnelling magnetoresistance (TMR) effect below 10 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 10, 'K', 0]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92195, 92195)
 Here, we have fabricated hybrid magnetictunnel junctions consisting of Co and L<missing VAR>AO/ST<missing VAR>O ferromagnets with the insertionof a Ti layer in between, which clearly exhibit magnetic switching and thetunnelling magnetoresistance (TMR) effect below 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 10, 'K', 0]

Ti
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92210, 92210)
 Here, we have fabricated hybrid magnetictunnel junctions consisting of Co and L<missing VAR>AO/ST<missing VAR>O ferromagnets with the insertionof a Ti layer in between, which clearly exhibit magnetic switching and thetunnelling magnetoresistance (TMR) effect below 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 10, 'K', 0]

O/S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92298, 92300)
 The magnitude and the ofthe TMR are strongly dependent on the direction of the rotational magneticfield parallel to the L<missing VAR>AO/ST<missing VAR>O plane, which is attributed to a strongRashba-type spin orbit coupling in the L<missing VAR>AO/ST<missing VAR>O heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[51.0, 10, 'K', 1]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92302, 92302)
 The magnitude and the ofthe TMR are strongly dependent on the direction of the rotational magneticfield parallel to the L<missing VAR>AO/ST<missing VAR>O plane, which is attributed to a strongRashba-type spin orbit coupling in the L<missing VAR>AO/ST<missing VAR>O heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 10, 'K', 1]

O/S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92336, 92338)
 The magnitude and the ofthe TMR are strongly dependent on the direction of the rotational magneticfield parallel to the L<missing VAR>AO/ST<missing VAR>O plane, which is attributed to a strongRashba-type spin orbit coupling in the L<missing VAR>AO/ST<missing VAR>O heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[89.0, 10, 'K', 1]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92340, 92340)
 The magnitude and the ofthe TMR are strongly dependent on the direction of the rotational magneticfield parallel to the L<missing VAR>AO/ST<missing VAR>O plane, which is attributed to a strongRashba-type spin orbit coupling in the L<missing VAR>AO/ST<missing VAR>O heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 10, 'K', 1]

O/S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92377, 92379)
 Our studyprovides a further support for the existence of the macroscopic ferromagnetismat L<missing VAR>AO/ST<missing VAR>O heterointerfaces and opens a novel route to realize interfacialspintronics devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[130.0, 10, 'K', 2]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(92381, 92381)
 Our studyprovides a further support for the existence of the macroscopic ferromagnetismat L<missing VAR>AO/ST<missing VAR>O heterointerfaces and opens a novel route to realize interfacialspintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 10, 'K', 2]

Tb/Co
###Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions|Sucheta Mondal,Debanjan Polley,Akshay Pattabi,Jyotirmoy Chatterjee,David Salomoni,Luis Aviles-Felix,Aurélien Olivier,Miguel Rubio-Roy,Bernard Diény,Liliana Daniela Buda Prejbeanu,Ricardo Sousa,Ioan Lucian Prejbeanu,Jeffrey Bokor###
(92421, 92423)
Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[132.0, 90, 'fs', 4],[228.0, 300, 'nm', 6],[231.0, 20, 'nm', 6]

Tb
###Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions|Sucheta Mondal,Debanjan Polley,Akshay Pattabi,Jyotirmoy Chatterjee,David Salomoni,Luis Aviles-Felix,Aurélien Olivier,Miguel Rubio-Roy,Bernard Diény,Liliana Daniela Buda Prejbeanu,Ricardo Sousa,Ioan Lucian Prejbeanu,Jeffrey Bokor###
(92522, 92522)
 Wedemonstrate optical switching of Tb/Comultilayer-based nanoscale MTJs bycombining optical writing and electrical read-out methods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 90, 'fs', 1],[129.0, 300, 'nm', 3],[132.0, 20, 'nm', 3]

S
###Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions|Sucheta Mondal,Debanjan Polley,Akshay Pattabi,Jyotirmoy Chatterjee,David Salomoni,Luis Aviles-Felix,Aurélien Olivier,Miguel Rubio-Roy,Bernard Diény,Liliana Daniela Buda Prejbeanu,Ricardo Sousa,Ioan Lucian Prejbeanu,Jeffrey Bokor###
(92579, 92579)
 A 90 fs-long laserpulse switches the magnetization of the storage layer (SL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 90, 'fs', 0],[72.0, 300, 'nm', 2],[75.0, 20, 'nm', 2]

S
###Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions|Sucheta Mondal,Debanjan Polley,Akshay Pattabi,Jyotirmoy Chatterjee,David Salomoni,Luis Aviles-Felix,Aurélien Olivier,Miguel Rubio-Roy,Bernard Diény,Liliana Daniela Buda Prejbeanu,Ricardo Sousa,Ioan Lucian Prejbeanu,Jeffrey Bokor###
(92597, 92597)
 The change inmagnetoresistance between the SL<missing VAR> and a reference layer (RL) is probedelectrically across the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 90, 'fs', 1],[54.0, 300, 'nm', 1],[57.0, 20, 'nm', 1]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(92819, 92819)
 Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronicsdriven by the advantages of antiferromagnets producing no stray fields andexhibiting ultrafast magnetization dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 300, '%', 3]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(92886, 92886)
 The efficient method to detect anAFM<missing VAR> order parameter, known as the Neel vector, by electric means is criticalto realize concepts of AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 300, '%', 2]

N
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(92900, 92900)
 The efficient method to detect anAFM<missing VAR> order parameter, known as the Neel vector, by electric means is criticalto realize concepts of AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 300, '%', 2]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(92926, 92926)
 The efficient method to detect anAFM<missing VAR> order parameter, known as the Neel vector, by electric means is criticalto realize concepts of AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 300, '%', 2]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(92947, 92947)
 Here, we demonstrate that non-collinearAFM<missing VAR> metals, such as Mn3Sn, exhibit a momentum dependent spin polarization whichcan be exploited in AFM<missing VAR> tunnel junctions to detect the Neel vector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 300, '%', 1]

Mn3Sn
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(92957, 92959)
 Here, we demonstrate that non-collinearAFM<missing VAR> metals, such as Mn3Sn, exhibit a momentum dependent spin polarization whichcan be exploited in AFM<missing VAR> tunnel junctions to detect the Neel vector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 300, '%', 1]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(92986, 92986)
 Here, we demonstrate that non-collinearAFM<missing VAR> metals, such as Mn3Sn, exhibit a momentum dependent spin polarization whichcan be exploited in AFM<missing VAR> tunnel junctions to detect the Neel vector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 300, '%', 1]

N
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(92999, 92999)
 Here, we demonstrate that non-collinearAFM<missing VAR> metals, such as Mn3Sn, exhibit a momentum dependent spin polarization whichcan be exploited in AFM<missing VAR> tunnel junctions to detect the Neel vector.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 300, '%', 1]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(93056, 93056)
 Usingfirst-principles calculations based on density functional theory, we predict atunneling magnetoresistance (TMR) effect as high as 300% in AFM<missing VAR> tunneljunctions with Mn3Sn electrodes, where the junction resistance depends on therelative orientation of their Neel vectors and exhibits four non-volatileresistance states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 300, '%', 0]

Mn3Sn
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(93066, 93068)
 Usingfirst-principles calculations based on density functional theory, we predict atunneling magnetoresistance (TMR) effect as high as 300% in AFM<missing VAR> tunneljunctions with Mn3Sn electrodes, where the junction resistance depends on therelative orientation of their Neel vectors and exhibits four non-volatileresistance states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 300, '%', 0]

N
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(93096, 93096)
 Usingfirst-principles calculations based on density functional theory, we predict atunneling magnetoresistance (TMR) effect as high as 300% in AFM<missing VAR> tunneljunctions with Mn3Sn electrodes, where the junction resistance depends on therelative orientation of their Neel vectors and exhibits four non-volatileresistance states.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 300, '%', 0]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(93163, 93163)
 We argue that the spin-split band structure and the relatedTMR effect can also be realized in other non-collinear AFM<missing VAR> metals like Mn3Ge,Mn3Ga, Mn3Pt, and Mn3GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 300, '%', 1]

Mn3Ge
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(93170, 93172)
 We argue that the spin-split band structure and the relatedTMR effect can also be realized in other non-collinear AFM<missing VAR> metals like Mn3Ge,Mn3Ga, Mn3Pt, and Mn3GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 300, '%', 1]

Mn3Ga
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(93176, 93178)
 We argue that the spin-split band structure and the relatedTMR effect can also be realized in other non-collinear AFM<missing VAR> metals like Mn3Ge,Mn3Ga, Mn3Pt, and Mn3GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 300, '%', 1]

Mn3Pt
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(93181, 93183)
 We argue that the spin-split band structure and the relatedTMR effect can also be realized in other non-collinear AFM<missing VAR> metals like Mn3Ge,Mn3Ga, Mn3Pt, and Mn3GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 300, '%', 1]

Mn3GaN
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(93188, 93191)
 We argue that the spin-split band structure and the relatedTMR effect can also be realized in other non-collinear AFM<missing VAR> metals like Mn3Ge,Mn3Ga, Mn3Pt, and Mn3GaN.
Featurization terminated normally.
0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 300, '%', 1]

N
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(93213, 93213)
 Our work provides a robust method for detecting theNeel vector in non-collinear antiferromagnets via the TMR effect, which maybe useful for their application in AFM<missing VAR> spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 300, '%', 2]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(93255, 93255)
 Our work provides a robust method for detecting theNeel vector in non-collinear antiferromagnets via the TMR effect, which maybe useful for their application in AFM<missing VAR> spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 300, '%', 2]

MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93283, 93284)
Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 2, ',', 2]

Co/Fe
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93298, 93300)
Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[184.0, 2, ',', 2]

S
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93345, 93345)
 Magnetic tunnel junctions with perpendicular anisotropy form the basis of thespin-transfer torque magnetic random-access memory (STT-MRAM), which isnon-volatile, fast, dense, and has quasi-infinite write endurance and low powerconsumption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, ',', 1]

Fe
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93435, 93435)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2, ',', 0]

Co
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93439, 93439)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, ',', 0]

Fe
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93443, 93443)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, ',', 0]

MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93448, 93449)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 2, ',', 0]

P
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93469, 93469)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, ',', 0]

Fe/MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93500, 93503)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 2, ',', 0]

P
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93517, 93517)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, ',', 0]

Co
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93528, 93528)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, ',', 0]

Fe/MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93594, 93597)
 The tunneling magnetoresistance (TMR) estimated from theJulliere model is comparable with that of the pure Fe/MgO case.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[110.0, 2, ',', 2]

MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93667, 93668)
 We discuss theadvantages and pitfalls of a real-life fabrication of the structure and proposethe Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM<missing VAR> cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 2, ',', 3]

S
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93672, 93672)
 We discuss theadvantages and pitfalls of a real-life fabrication of the structure and proposethe Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM<missing VAR> cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 2, ',', 3]

P
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93689, 93689)
 Thelarge PM<missing VAR>A in strained bcc Co is explained in the framework of Brunos<missing VAR> model bythe MgO-imposed strain and consequent changes in the energies of dyz and dz2minority-spin bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2, ',', 4]

Co
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93699, 93699)
 Thelarge PM<missing VAR>A in strained bcc Co is explained in the framework of Brunos<missing VAR> model bythe MgO-imposed strain and consequent changes in the energies of dyz and dz2minority-spin bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 2, ',', 4]

MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(93723, 93724)
 Thelarge PM<missing VAR>A in strained bcc Co is explained in the framework of Brunos<missing VAR> model bythe MgO-imposed strain and consequent changes in the energies of dyz and dz2minority-spin bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, ',', 4]

La1.9Sr0.1CuO4
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(93791, 93797)
Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of La1.9Sr0.1CuO4 - La0.67Ca0.33MnO3 - La1.9Sr0.1CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.014285714285714287,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 5, 'or', 5],[226.0, 6, 'T', 5],[233.0, 0, 'T', 5],[306.0, 12, 'nm', 6],[332.0, 12, 'nm', 7]

La0.67Ca0.33MnO3
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(93801, 93807)
Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of La1.9Sr0.1CuO4 - La0.67Ca0.33MnO3 - La1.9Sr0.1CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 5, 'or', 5],[216.0, 6, 'T', 5],[223.0, 0, 'T', 5],[296.0, 12, 'nm', 6],[322.0, 12, 'nm', 7]

La1.9Sr0.1CuO4
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(93811, 93817)
Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of La1.9Sr0.1CuO4 - La0.67Ca0.33MnO3 - La1.9Sr0.1CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.014285714285714287,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 5, 'or', 5],[206.0, 6, 'T', 5],[213.0, 0, 'T', 5],[286.0, 12, 'nm', 6],[312.0, 12, 'nm', 7]

La1.9Sr0.1CuO4
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(93847, 93853)
 Transport and Conductance spectra measurements of ramp-type junctions made ofcuprate superconducting La1.9Sr0.1CuO4 electrodes and a manganiteferromagnetic La0.67Ca0.33MnO3 barrier are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.014285714285714287,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 5, 'or', 4],[170.0, 6, 'T', 4],[177.0, 0, 'T', 4],[250.0, 12, 'nm', 5],[276.0, 12, 'nm', 6]

La0.67Ca0.33MnO3
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(93866, 93872)
 Transport and Conductance spectra measurements of ramp-type junctions made ofcuprate superconducting La1.9Sr0.1CuO4 electrodes and a manganiteferromagnetic La0.67Ca0.33MnO3 barrier are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 5, 'or', 4],[151.0, 6, 'T', 4],[158.0, 0, 'T', 4],[231.0, 12, 'nm', 5],[257.0, 12, 'nm', 6]

At
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(93881, 93881)
 At lowtemperatures below Tc, the conductance spectra show Andreev-like broad peakssuperposed on a tunneling-like background, and sometimes also sub-gap Andreevresonances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 5, 'or', 3],[142.0, 6, 'T', 3],[149.0, 0, 'T', 3],[222.0, 12, 'nm', 4],[248.0, 12, 'nm', 5]

V
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(93974, 93974)
 The energy gap values Delta found from fits of the data rangedmostly between 7-10 m<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 5, 'or', 2],[49.0, 6, 'T', 2],[56.0, 0, 'T', 2],[129.0, 12, 'nm', 3],[155.0, 12, 'nm', 4]

As
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(93977, 93977)
 As usual, the gap features were suppressed undermagnetic fields but revealed the tunneling-like conductance background.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 5, 'or', 1],[46.0, 6, 'T', 1],[53.0, 0, 'T', 1],[126.0, 12, 'nm', 2],[152.0, 12, 'nm', 3]

O
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(94110, 94110)
 A signature of superparamagnetism was found in theconductance spectra of junctions with a 12 nm thick LCMO barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 5, 'or', 1],[87.0, 6, 'T', 1],[80.0, 0, 'T', 1],[7.0, 12, 'nm', 0],[19.0, 12, 'nm', 1]

Nb/AlAl
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94195, 94198)
Comparative analysis of tunneling magnetoresistance in low-Tc Nb/AlAlOx/Nb and high-Tc Bi2-yPby<missing VAR>Sr2CaCu2O8 intrinsic Josephson junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[300.0, 2, '<', 6],[462.0, 2, ',', 9]

Nb
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94201, 94201)
Comparative analysis of tunneling magnetoresistance in low-Tc Nb/AlAlOx/Nb and high-Tc Bi2-yPby<missing VAR>Sr2CaCu2O8 intrinsic Josephson junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 2, '<', 6],[459.0, 2, ',', 9]

Bi2-yPb
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94210, 94214)
Comparative analysis of tunneling magnetoresistance in low-Tc Nb/AlAlOx/Nb and high-Tc Bi2-yPby<missing VAR>Sr2CaCu2O8 intrinsic Josephson junctions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[284.0, 2, '<', 6],[446.0, 2, ',', 9]

Sr2CaCu2O8
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94216, 94222)
Comparative analysis of tunneling magnetoresistance in low-Tc Nb/AlAlOx/Nb and high-Tc Bi2-yPby<missing VAR>Sr2CaCu2O8 intrinsic Josephson junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 2, '<', 6],[438.0, 2, ',', 9]

Nb/AlAl
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94255, 94258)
 We perform a detailed comparison of magnetotunneling in conventionallow-Tc Nb/AlAlOx/Nb junctions with that in slightly overdopedBi2-yPby<missing VAR>Sr2CaCu2O8delta [Bi(Pb)-2212] intrinsic Josephsonjunctions and with microscopic calculations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[240.0, 2, '<', 5],[402.0, 2, ',', 8]

Nb
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94261, 94261)
 We perform a detailed comparison of magnetotunneling in conventionallow-Tc Nb/AlAlOx/Nb junctions with that in slightly overdopedBi2-yPby<missing VAR>Sr2CaCu2O8delta [Bi(Pb)-2212] intrinsic Josephsonjunctions and with microscopic calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 2, '<', 5],[399.0, 2, ',', 8]

Bi2-yPb
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94276, 94280)
 We perform a detailed comparison of magnetotunneling in conventionallow-Tc Nb/AlAlOx/Nb junctions with that in slightly overdopedBi2-yPby<missing VAR>Sr2CaCu2O8delta [Bi(Pb)-2212] intrinsic Josephsonjunctions and with microscopic calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[218.0, 2, '<', 5],[380.0, 2, ',', 8]

Sr2CaCu2O8
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94282, 94288)
 We perform a detailed comparison of magnetotunneling in conventionallow-Tc Nb/AlAlOx/Nb junctions with that in slightly overdopedBi2-yPby<missing VAR>Sr2CaCu2O8delta [Bi(Pb)-2212] intrinsic Josephsonjunctions and with microscopic calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 2, '<', 5],[372.0, 2, ',', 8]

Bi(Pb)
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94292, 94295)
 We perform a detailed comparison of magnetotunneling in conventionallow-Tc Nb/AlAlOx/Nb junctions with that in slightly overdopedBi2-yPby<missing VAR>Sr2CaCu2O8delta [Bi(Pb)-2212] intrinsic Josephsonjunctions and with microscopic calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2, '<', 5],[365.0, 2, ',', 8]

H
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94472, 94472)
 We derivedtheoretically and verified experimentally scaling laws of magnetotunnelingcharacteristics and employ them for accurate extraction of the upper criticalfield Hc<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2, '<', 1],[188.0, 2, ',', 4]

Nb
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94479, 94479)
 For Nb an extended region of surface superconductivity atHc<missing VAR>2<H<Hc<missing VAR>3 is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, '<', 0],[181.0, 2, ',', 3]

H
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94496, 94496)
 For Nb an extended region of surface superconductivity atHc<missing VAR>2<H<Hc<missing VAR>3 is observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, '<', 0],[164.0, 2, ',', 3]

H
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94500, 94500)
 For Nb an extended region of surface superconductivity atHc<missing VAR>2<H<Hc<missing VAR>3 is observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, '<', 0],[160.0, 2, ',', 3]

H
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94502, 94502)
 For Nb an extended region of surface superconductivity atHc<missing VAR>2<H<Hc<missing VAR>3 is observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, '<', 0],[158.0, 2, ',', 3]

Bi(Pb)
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94517, 94520)
 The parameters of Bi(Pb)-2212 were obtained fromself-consistent analysis of magnetotunneling data at different levels of bias,dissipation powers and for different mesa sizes, which precludes the influenceof self-heating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, '<', 1],[140.0, 2, ',', 2]

H
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94594, 94594)
 It is found that Hc<missing VAR>2(0) for Bi(Pb)-2212 is simeq 70 T<missing VAR>and decreases significantly at T<missing VAR>rightarrow Tc.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, '<', 2],[66.0, 2, ',', 1]

Bi(Pb)
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(94603, 94606)
 It is found that Hc<missing VAR>2(0) for Bi(Pb)-2212 is simeq 70 T<missing VAR>and decreases significantly at T<missing VAR>rightarrow Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2, '<', 2],[54.0, 2, ',', 1]

H
###Large two-level magnetoresistance effect in doped manganite grain boundary junctions|J. B. Philipp,C. Hoefener,S. Thienhaus,J. Klein,L. Alff,R. Gross###
(94857, 94857)
 For magneticfields H applied parallel to the grain boundary barrier, an ideal two-levelresistance switching behavior with sharp transitions is observed with a TMReffect of up to 300% at 4.2 K and still above 100% at 77 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 300, '%', 0],[63.0, 4.2, 'K', 0],[71.0, 100, '%', 0],[75.0, 77, 'K', 0]

H
###Large two-level magnetoresistance effect in doped manganite grain boundary junctions|J. B. Philipp,C. Hoefener,S. Thienhaus,J. Klein,L. Alff,R. Gross###
(94944, 94944)
 Varying the anglebetween H and the grain boundary results in differently shaped resistance vs Hcurves.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 300, '%', 1],[24.0, 4.2, 'K', 1],[16.0, 100, '%', 1],[12.0, 77, 'K', 1]

H
###Large two-level magnetoresistance effect in doped manganite grain boundary junctions|J. B. Philipp,C. Hoefener,S. Thienhaus,J. Klein,L. Alff,R. Gross###
(94966, 94966)
 Varying the anglebetween H and the grain boundary results in differently shaped resistance vs Hcurves.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 300, '%', 1],[46.0, 4.2, 'K', 1],[38.0, 100, '%', 1],[34.0, 77, 'K', 1]

N
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95079, 95079)
 This work presents an ab-initio study of a few-layers hexagonal boron nitride(h<missing VAR>BN) and h<missing VAR>BN-graphene heterostructure sandwiched between Ni(111) layers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, ',', 2],[109.0, 3, ',', 2],[112.0, 4, ',', 2],[116.0, 5, 'as', 2],[294.0, 2, 'and', 5],[308.0, 2, ',', 5],[423.0, 2, ',', 7],[570.0, 1200, '%', 9]

BN
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95085, 95086)
 This work presents an ab-initio study of a few-layers hexagonal boron nitride(h<missing VAR>BN) and h<missing VAR>BN-graphene heterostructure sandwiched between Ni(111) layers.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, ',', 2],[102.0, 3, ',', 2],[105.0, 4, ',', 2],[109.0, 5, 'as', 2],[287.0, 2, 'and', 5],[301.0, 2, ',', 5],[416.0, 2, ',', 7],[563.0, 1200, '%', 9]

BN
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95209, 95210)
 Spin-polarized density functional theory calculations andtransmission probability calculations were conducted on Ni(111)/nhBN/Ni(111)with n<missing VAR>  2, 3, 4, and 5 as well as on Ni(111)/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni(111).
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, ',', 0],[21.0, 3, ',', 0],[18.0, 4, ',', 0],[14.0, 5, 'as', 0],[163.0, 2, 'and', 3],[177.0, 2, ',', 3],[292.0, 2, ',', 5],[439.0, 1200, '%', 7]

C
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95246, 95246)
 Slabs withmagnetic alignment in an anti-parallel configuration (APC) and parallelconfiguration (PC) were considered.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, ',', 1],[58.0, 3, ',', 1],[55.0, 4, ',', 1],[51.0, 5, 'as', 1],[127.0, 2, 'and', 2],[141.0, 2, ',', 2],[256.0, 2, ',', 4],[403.0, 1200, '%', 6]

(PC)
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95256, 95259)
 Slabs withmagnetic alignment in an anti-parallel configuration (APC) and parallelconfiguration (PC) were considered.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, ',', 1],[68.0, 3, ',', 1],[65.0, 4, ',', 1],[61.0, 5, 'as', 1],[114.0, 2, 'and', 2],[128.0, 2, ',', 2],[243.0, 2, ',', 4],[390.0, 1200, '%', 6]

Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95291, 95291)
 The pd-hybridizations at both the upper andlower interfaces between the Ni slabs and h<missing VAR>BN were found to stabilize thesystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, ',', 2],[103.0, 3, ',', 2],[100.0, 4, ',', 2],[96.0, 5, 'as', 2],[82.0, 2, 'and', 1],[96.0, 2, ',', 1],[211.0, 2, ',', 3],[358.0, 1200, '%', 5]

BN
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95298, 95299)
 The pd-hybridizations at both the upper andlower interfaces between the Ni slabs and h<missing VAR>BN were found to stabilize thesystem.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, ',', 2],[110.0, 3, ',', 2],[107.0, 4, ',', 2],[103.0, 5, 'as', 2],[74.0, 2, 'and', 1],[88.0, 2, ',', 1],[203.0, 2, ',', 3],[350.0, 1200, '%', 5]

Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95317, 95317)
 The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit ahigh tunneling magnetoresistance (TMR) ratio at 0.28 e<missing VAR>V for n<missing VAR>  2 and 0.34e<missing VAR>V for n<missing VAR> > 2, which are slightly higher than the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, ',', 3],[129.0, 3, ',', 3],[126.0, 4, ',', 3],[122.0, 5, 'as', 3],[56.0, 2, 'and', 0],[70.0, 2, ',', 0],[185.0, 2, ',', 2],[332.0, 1200, '%', 4]

BN/Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95320, 95323)
 The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit ahigh tunneling magnetoresistance (TMR) ratio at 0.28 e<missing VAR>V for n<missing VAR>  2 and 0.34e<missing VAR>V for n<missing VAR> > 2, which are slightly higher than the Fermi energy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[135.0, 2, ',', 3],[132.0, 3, ',', 3],[129.0, 4, ',', 3],[125.0, 5, 'as', 3],[50.0, 2, 'and', 0],[64.0, 2, ',', 0],[179.0, 2, ',', 2],[326.0, 1200, '%', 4]

V
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95367, 95367)
 The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit ahigh tunneling magnetoresistance (TMR) ratio at 0.28 e<missing VAR>V for n<missing VAR>  2 and 0.34e<missing VAR>V for n<missing VAR> > 2, which are slightly higher than the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 2, ',', 3],[179.0, 3, ',', 3],[176.0, 4, ',', 3],[172.0, 5, 'as', 3],[6.0, 2, 'and', 0],[20.0, 2, ',', 0],[135.0, 2, ',', 2],[282.0, 1200, '%', 4]

V
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95379, 95379)
 The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit ahigh tunneling magnetoresistance (TMR) ratio at 0.28 e<missing VAR>V for n<missing VAR>  2 and 0.34e<missing VAR>V for n<missing VAR> > 2, which are slightly higher than the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 2, ',', 3],[191.0, 3, ',', 3],[188.0, 4, ',', 3],[184.0, 5, 'as', 3],[6.0, 2, 'and', 0],[8.0, 2, ',', 0],[123.0, 2, ',', 2],[270.0, 1200, '%', 4]

Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95459, 95459)
 The observedshifting of this high TMR ratio originates from the transmission of electronsthrough the surface states of the dz2-orbital of Ni atoms at interfaceswhich are hybridized with the pz-orbital of N atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 2, ',', 4],[271.0, 3, ',', 4],[268.0, 4, ',', 4],[264.0, 5, 'as', 4],[86.0, 2, 'and', 1],[72.0, 2, ',', 1],[43.0, 2, ',', 1],[190.0, 1200, '%', 3]

N
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95485, 95485)
 The observedshifting of this high TMR ratio originates from the transmission of electronsthrough the surface states of the dz2-orbital of Ni atoms at interfaceswhich are hybridized with the pz-orbital of N atoms.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 2, ',', 4],[297.0, 3, ',', 4],[294.0, 4, ',', 4],[290.0, 5, 'as', 4],[112.0, 2, 'and', 1],[98.0, 2, ',', 1],[17.0, 2, ',', 1],[164.0, 1200, '%', 3]

In
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95490, 95490)
 In the case of n<missing VAR> > 2,the proximity effect causes an evanescent wave, contributing to decreasingtransmission probability but increasing the TMR ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 2, ',', 5],[302.0, 3, ',', 5],[299.0, 4, ',', 5],[295.0, 5, 'as', 5],[117.0, 2, 'and', 2],[103.0, 2, ',', 2],[12.0, 2, ',', 0],[159.0, 1200, '%', 2]

BN
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95588, 95589)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 2, ',', 6],[400.0, 3, ',', 6],[397.0, 4, ',', 6],[393.0, 5, 'as', 6],[215.0, 2, 'and', 3],[201.0, 2, ',', 3],[86.0, 2, ',', 1],[60.0, 1200, '%', 1]

Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95597, 95597)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 2, ',', 6],[409.0, 3, ',', 6],[406.0, 4, ',', 6],[402.0, 5, 'as', 6],[224.0, 2, 'and', 3],[210.0, 2, ',', 3],[95.0, 2, ',', 1],[52.0, 1200, '%', 1]

BN/Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95601, 95604)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[416.0, 2, ',', 6],[413.0, 3, ',', 6],[410.0, 4, ',', 6],[406.0, 5, 'as', 6],[228.0, 2, 'and', 3],[214.0, 2, ',', 3],[99.0, 2, ',', 1],[45.0, 1200, '%', 1]

Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95620, 95620)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[435.0, 2, ',', 6],[432.0, 3, ',', 6],[429.0, 4, ',', 6],[425.0, 5, 'as', 6],[247.0, 2, 'and', 3],[233.0, 2, ',', 3],[118.0, 2, ',', 1],[29.0, 1200, '%', 1]

BN
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95623, 95624)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 2, ',', 6],[435.0, 3, ',', 6],[432.0, 4, ',', 6],[428.0, 5, 'as', 6],[250.0, 2, 'and', 3],[236.0, 2, ',', 3],[121.0, 2, ',', 1],[25.0, 1200, '%', 1]

BN/Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95629, 95632)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[444.0, 2, ',', 6],[441.0, 3, ',', 6],[438.0, 4, ',', 6],[434.0, 5, 'as', 6],[256.0, 2, 'and', 3],[242.0, 2, ',', 3],[127.0, 2, ',', 1],[17.0, 1200, '%', 1]

V
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(95668, 95668)
 A TMR ratio as high as 1200% was observed at an energy of0.34 e<missing VAR>V, which is higher than the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[483.0, 2, ',', 7],[480.0, 3, ',', 7],[477.0, 4, ',', 7],[473.0, 5, 'as', 7],[295.0, 2, 'and', 4],[281.0, 2, ',', 4],[166.0, 2, ',', 2],[19.0, 1200, '%', 0]

W
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(95855, 95855)
 A radically different approach ofusing atomically-thin van der Waals (vdW) materials in MTJs is expected toboost their figure of merit, the tunneling magnetoresistance (TMR), whilerelaxing the lattice-matching requirements from the epitaxial growth andsupporting high-quality integration of dissimilar materials withatomically-sharp interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 192, '%', 1],[106.0, 10, 'K', 1]

W
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(95968, 95968)
 We report TMR up to 192% at 10 K in all-vdWFe3GeTe2/GaSe/Fe3GeTe2 MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 192, '%', 0],[7.0, 10, 'K', 0]

Fe3GeTe2/GaSe/Fe3GeTe2
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(95971, 95984)
 We report TMR up to 192% at 10 K in all-vdWFe3GeTe2/GaSe/Fe3GeTe2 MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 192, '%', 0],[10.0, 10, 'K', 0]

W
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(96025, 96025)
 Remarkably, instead of the usual insulatingspacer, this large TMR is realized with a vdW semiconductor GaSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 192, '%', 1],[64.0, 10, 'K', 1]

GaSe
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(96029, 96030)
 Remarkably, instead of the usual insulatingspacer, this large TMR is realized with a vdW semiconductor GaSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 192, '%', 1],[68.0, 10, 'K', 1]

W
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(96051, 96051)
 Integrationof two-dimensional ferromagnets in semiconductor-based vdW junctions offersgate-tunability, bias dependence, magnetic proximity effects, andspin-dependent optical-selection rules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 192, '%', 2],[90.0, 10, 'K', 2]

W
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(96157, 96157)
 We demonstrate that not just themagnitude, but also the TMR sign is tuned by the applied bias or thesemiconductor thickness, enabling modulation of highly spin-polarized carriersin vdW semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 192, '%', 3],[196.0, 10, 'K', 3]

La
###Unravelling the role of the interface for spin injection into organic semiconductors|Clément Barraud,Pierre Seneor,Richard Mattana,Stéphane Fusil,Karim Bouzehouane,Cyrile Deranlot,Patrizio Graziosi,Luis Hueso,Ilaria Bergenti,Valentin Dediu,Frédéric Petroff,Albert Fert###
(96333, 96333)
 We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 300, '%', 0]

Sr
###Unravelling the role of the interface for spin injection into organic semiconductors|Clément Barraud,Pierre Seneor,Richard Mattana,Stéphane Fusil,Karim Bouzehouane,Cyrile Deranlot,Patrizio Graziosi,Luis Hueso,Ilaria Bergenti,Valentin Dediu,Frédéric Petroff,Albert Fert###
(96335, 96335)
 We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 300, '%', 0]

MnO3
###Unravelling the role of the interface for spin injection into organic semiconductors|Clément Barraud,Pierre Seneor,Richard Mattana,Stéphane Fusil,Karim Bouzehouane,Cyrile Deranlot,Patrizio Graziosi,Luis Hueso,Ilaria Bergenti,Valentin Dediu,Frédéric Petroff,Albert Fert###
(96337, 96339)
 We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 300, '%', 0]

Co
###Unravelling the role of the interface for spin injection into organic semiconductors|Clément Barraud,Pierre Seneor,Richard Mattana,Stéphane Fusil,Karim Bouzehouane,Cyrile Deranlot,Patrizio Graziosi,Luis Hueso,Ilaria Bergenti,Valentin Dediu,Frédéric Petroff,Albert Fert###
(96344, 96344)
 We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 300, '%', 0]

W
###Magnetoresistive sensors based on the elasticity of domain walls|Xueying Zhang,Nicolas Vernier,Zhiqiang Cao,Qunwen Leng,Anni Cao,Dafine Ravelosona,Weisheng Zhao###
(96623, 96623)
 Here, we propose a novel mechanism for thedesign of magnetoresistive sensors probing the perpendicular field bydetecting the expansion of the elastic magnetic Domain Wall (D<missing VAR>W) in the freelayer of a spin valve or a magnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(96830, 96834)
Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(96847, 96847)
 Van der Waals (vdW) heterostructures, stacking different two-dimensionalmaterials, have opened up unprecedented opportunities to explore new physicsand device concepts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(96909, 96909)
 Especially interesting are recently discoveredtwo-dimensional magnetic vdW materials, providing new paradigms for spintronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(96966, 96966)
 Here, using density functional theory (DFT) calculations, weinvestigate the spin-dependent electronic transport across vdW magnetic tunneljunctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a grapheneor hexagonal boron nitride (h<missing VAR>-BN) spacer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(96985, 96989)
 Here, using density functional theory (DFT) calculations, weinvestigate the spin-dependent electronic transport across vdW magnetic tunneljunctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a grapheneor hexagonal boron nitride (h<missing VAR>-BN) spacer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(97014, 97014)
 Here, using density functional theory (DFT) calculations, weinvestigate the spin-dependent electronic transport across vdW magnetic tunneljunctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a grapheneor hexagonal boron nitride (h<missing VAR>-BN) spacer layer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(97128, 97132)
 Sucha giant tunneling magnetoresistance (TMR) effect is driven by dissimilarelectronic structure of the two spin-conducting channels in Fe3GeTe2, resultingin a mismatch between the incoming and outgoing Bloch states in the electrodesand thus suppressed transmission for an antiparallel-aligned MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(97189, 97189)
 The vdWbounding between electrodes and a spacer layer makes this result virtuallyindependent of the type of the spacer layer, making the predicted giant TMReffect robust with respect to strain, lattice mismatch, interface distance andother parameters which may vary in the experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(97311, 97311)
 We hope that our resultswill further stimulate experimental studies of vdW MTJs and pave the way fortheir applications in spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FF)
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97404, 97407)
 First- and second-order phase transitions, Fulde-Ferrel (FF) inhomogeneoussuperconducting (SC) state and quantum criticality inferromagnet/superconductor/ferromagnet double tunnel junctions areinvestigated.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 2, ',', 4],[324.0, 1, 'and', 4],[326.0, 2, ',', 4]

(SC)
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97414, 97417)
 First- and second-order phase transitions, Fulde-Ferrel (FF) inhomogeneoussuperconducting (SC) state and quantum criticality inferromagnet/superconductor/ferromagnet double tunnel junctions areinvestigated.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 2, ',', 4],[314.0, 1, 'and', 4],[316.0, 2, ',', 4]

BCS
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97486, 97488)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 2, ',', 3],[243.0, 1, 'and', 3],[245.0, 2, ',', 3]

FF
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97499, 97500)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 2, ',', 3],[231.0, 1, 'and', 3],[233.0, 2, ',', 3]

V
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97516, 97516)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 2, ',', 3],[215.0, 1, 'and', 3],[217.0, 2, ',', 3]

BCS
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97531, 97533)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 2, ',', 3],[198.0, 1, 'and', 3],[200.0, 2, ',', 3]

FF
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97541, 97542)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2, ',', 3],[189.0, 1, 'and', 3],[191.0, 2, ',', 3]

V
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97559, 97559)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 2, ',', 3],[172.0, 1, 'and', 3],[174.0, 2, ',', 3]

In
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97593, 97593)
 In addition, a quantum critical point (Q<missing VAR>CP), % VQ<missing VAR>CP, isidentified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2, ',', 1],[138.0, 1, 'and', 1],[140.0, 2, ',', 1]

P
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97609, 97609)
 In addition, a quantum critical point (Q<missing VAR>CP), % VQ<missing VAR>CP, isidentified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2, ',', 1],[122.0, 1, 'and', 1],[124.0, 2, ',', 1]

V
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97615, 97615)
 In addition, a quantum critical point (Q<missing VAR>CP), % VQ<missing VAR>CP, isidentified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 2, ',', 1],[116.0, 1, 'and', 1],[118.0, 2, ',', 1]

CP
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97617, 97618)
 In addition, a quantum critical point (Q<missing VAR>CP), % VQ<missing VAR>CP, isidentified.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2, ',', 1],[113.0, 1, 'and', 1],[115.0, 2, ',', 1]

CP
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97640, 97641)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2, ',', 0],[90.0, 1, 'and', 0],[92.0, 2, ',', 0]

SC
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97646, 97647)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, ',', 0],[84.0, 1, 'and', 0],[86.0, 2, ',', 0]

SC
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97689, 97690)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, ',', 0],[41.0, 1, 'and', 0],[43.0, 2, ',', 0]

V
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97704, 97704)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2, ',', 0],[27.0, 1, 'and', 0],[29.0, 2, ',', 0]

V
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97706, 97706)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, ',', 0],[25.0, 1, 'and', 0],[27.0, 2, ',', 0]

CP
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(97708, 97709)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2, ',', 0],[22.0, 1, 'and', 0],[24.0, 2, ',', 0]

Co2Cr0.6Fe0.4Al
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(97767, 97773)
Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 54, '%', 4]

Co2Cr0.6Fe0.4Al
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(97807, 97813)
 Epitaxial thin films of the theoretically predicted half metalCo2Cr0.6Fe0.4Al were deposited by dc magnetron sputtering on differentsubstrates and buffer layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 54, '%', 3]

B2
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(97876, 97877)
 The samples were characterized by x<missing VAR>-ray andelectron beam diffraction (RHEED) demonstrating the B2 order of the Heuslercompound with only a small partition of disorder on the Co sites.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 54, '%', 2]

Co
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(97908, 97908)
 The samples were characterized by x<missing VAR>-ray andelectron beam diffraction (RHEED) demonstrating the B2 order of the Heuslercompound with only a small partition of disorder on the Co sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 54, '%', 2]

Co2Cr0.6Fe0.4Al
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(97922, 97928)
 Magnetictunneling junctions with Co2Cr0.6Fe0.4Al electrode, AlOx barrier and Co counterelectrode were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 54, '%', 1]

Al
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(97933, 97933)
 Magnetictunneling junctions with Co2Cr0.6Fe0.4Al electrode, AlOx barrier and Co counterelectrode were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 54, '%', 1]

Co
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(97940, 97940)
 Magnetictunneling junctions with Co2Cr0.6Fe0.4Al electrode, AlOx barrier and Co counterelectrode were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 54, '%', 1]

Co2Cr0.6Fe0.4Al
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(97969, 97975)
 From the Julliere model a spin polarisation ofCo2Cr0.6Fe0.4Al of 54% at T<missing VAR>4K is deduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 54, '%', 0]

K
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(97986, 97986)
 From the Julliere model a spin polarisation ofCo2Cr0.6Fe0.4Al of 54% at T<missing VAR>4K is deduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 54, '%', 0]

S
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(98070, 98070)
 The relation between the annealingtemperature of the Heusler electrodes and the magnitude of the tunnelingmagnetoresistance effect was investigated and the results are discussed in theframework of morphology and surface order based of in situ STM and RHEEDinvestigations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 54, '%', 1]

MgO
###Flexible MgO barrier magnetic tunnel junctions|Li Ming Loong,Wonho Lee,Xuepeng Qiu,Ping Yang,Hiroyo Kawai,Mark Saeys,Jong-Hyun Ahn,Hyunsoo Yang###
(98411, 98412)
Flexible MgO barrier magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Flexible MgO barrier magnetic tunnel junctions|Li Ming Loong,Wonho Lee,Xuepeng Qiu,Ping Yang,Hiroyo Kawai,Mark Saeys,Jong-Hyun Ahn,Hyunsoo Yang###
(98459, 98459)
 In particular, memorydevices are the fundamental component for data storage and processing inflexible electronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Flexible MgO barrier magnetic tunnel junctions|Li Ming Loong,Wonho Lee,Xuepeng Qiu,Ping Yang,Hiroyo Kawai,Mark Saeys,Jong-Hyun Ahn,Hyunsoo Yang###
(98504, 98505)
 Here, we present flexible MgO barrier magnetic tunneljunction (MTJ) devices fabricated using a transfer printing process, whichexhibit reliable and stable operation under substantial deformation of thedevice substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Flexible MgO barrier magnetic tunnel junctions|Li Ming Loong,Wonho Lee,Xuepeng Qiu,Ping Yang,Hiroyo Kawai,Mark Saeys,Jong-Hyun Ahn,Hyunsoo Yang###
(98566, 98566)
 In addition, the flexible MTJ devices yield significantlyenhanced tunneling magnetoresistance (TMR) of 300 % and improved abruptness ofswitching, as residual strain in the MTJ structure induced by the fabricationprocess is released during the transfer process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal|Huixin Guo,Zexin Feng,Han Yan,Jiuzhao Liu,Jia Zhang,Xiaorong Zhou,Peixin Qin,Jialin Cai,Zhongming Zeng,Xin Zhang,Xiaoning Wang,Hongyu Chen,Haojiang Wu,Chengbao Jiang,Zhiqi Liu###
(98842, 98842)
 In thiswork, we demonstrate the giant piezoelectric strain control of the spinstructure and the anomalous Hall resistance in a noncollinear antiferromagneticmetal - D<missing VAR>019 hexagonal Mn3Ga.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 200, 'nm', 1],[108.0, 10, '%', 1]

Mn3Ga
###Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal|Huixin Guo,Zexin Feng,Han Yan,Jiuzhao Liu,Jia Zhang,Xiaorong Zhou,Peixin Qin,Jialin Cai,Zhongming Zeng,Xin Zhang,Xiaoning Wang,Hongyu Chen,Haojiang Wu,Chengbao Jiang,Zhiqi Liu###
(98901, 98903)
 In thiswork, we demonstrate the giant piezoelectric strain control of the spinstructure and the anomalous Hall resistance in a noncollinear antiferromagneticmetal - D<missing VAR>019 hexagonal Mn3Ga.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 200, 'nm', 1],[47.0, 10, '%', 1]

MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99039, 99041)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99054, 99054)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99057, 99057)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99060, 99060)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99064, 99064)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99091, 99091)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99112, 99112)
 They exhibitextraordinary large magnetoresistance pronounced as CMR in the vicinity ofinsulator-metal/paramagnetic-ferromagnetic transition at a relatively largeapplied magnetic fields.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99168, 99168)
 However, for applied aspectes, occurence ofsignificant CMR at low applied magnetic fields would be required.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99204, 99204)
 This reviewconsists of of two sections In the first section we have extensively reviewedthe salient features e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99271, 99271)
 structure, phase diagram, double exchange mechansim,Jahn Teller effect, different types of ordering and phase separation of CMRmangnaites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99301, 99301)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99335, 99341)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99346, 99346)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99351, 99357)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.7Ca0.2Ba0.1MnO3)
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99364, 99374)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.67Ca0.33MnO3)
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99380, 99388)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99402, 99408)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ba0.2Sr0.1MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99418, 99426)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99428, 99428)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99436, 99442)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99444, 99444)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.4Ca1.6-xBa
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99459, 99465)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O7
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99469, 99470)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La1.4Ca1.6Mn2O7)
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(99477, 99486)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization successful!
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11666666666666665,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe5Al7
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99603, 99606)
Magnetic and magnetotransport behavior of R<missing VAR>Fe5Al7 (R<missing VAR> Gd and Dy) Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0.4166666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99611, 99611)
Magnetic and magnetotransport behavior of R<missing VAR>Fe5Al7 (R<missing VAR> Gd and Dy) Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Dy
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99615, 99615)
Magnetic and magnetotransport behavior of R<missing VAR>Fe5Al7 (R<missing VAR> Gd and Dy) Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99665, 99665)
 We have compared and contrasted magnetic, magnetocaloric and magnetoresistiveproperties of Gd and Dy members of the rare-earth (R) series R<missing VAR>Fe5Al7,crystallizing in ThMn12 structure, known to order antiferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Dy
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99669, 99669)
 We have compared and contrasted magnetic, magnetocaloric and magnetoresistiveproperties of Gd and Dy members of the rare-earth (R) series R<missing VAR>Fe5Al7,crystallizing in ThMn12 structure, known to order antiferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe5Al7
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99688, 99691)
 We have compared and contrasted magnetic, magnetocaloric and magnetoresistiveproperties of Gd and Dy members of the rare-earth (R) series R<missing VAR>Fe5Al7,crystallizing in ThMn12 structure, known to order antiferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0.4166666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ThMn12
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99699, 99701)
 We have compared and contrasted magnetic, magnetocaloric and magnetoresistiveproperties of Gd and Dy members of the rare-earth (R) series R<missing VAR>Fe5Al7,crystallizing in ThMn12 structure, known to order antiferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99781, 99781)
 Amongother observations, we would like to emphasize on the following novel findings(i) There are multiple sign-crossovers in the temperature (T) dependence ofisothermal entropy change (DeltaS) in the case of Dy compound; in addition tonil DeltaS at the magnetic compensation point known for two-magnetic-sublatticesystems, there is an additional sign-crossover at low temperatures, as thoughthere is a re-entrant inverse magnetocaloric phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Dy
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99792, 99792)
 Amongother observations, we would like to emphasize on the following novel findings(i) There are multiple sign-crossovers in the temperature (T) dependence ofisothermal entropy change (DeltaS) in the case of Dy compound; in addition tonil DeltaS at the magnetic compensation point known for two-magnetic-sublatticesystems, there is an additional sign-crossover at low temperatures, as thoughthere is a re-entrant inverse magnetocaloric phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99807, 99807)
 Amongother observations, we would like to emphasize on the following novel findings(i) There are multiple sign-crossovers in the temperature (T) dependence ofisothermal entropy change (DeltaS) in the case of Dy compound; in addition tonil DeltaS at the magnetic compensation point known for two-magnetic-sublatticesystems, there is an additional sign-crossover at low temperatures, as thoughthere is a re-entrant inverse magnetocaloric phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99948, 99950)
 (ii) The plotsof magnetoresistance versus magnetic field are found to be highly asymmetricwith the reversal of the direction of magnetic-field (H) well below T<missing VAR>N for bothcompounds, similar to that known for an antiferromagnetic tunnel junctions.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(99957, 99957)
 (ii) The plotsof magnetoresistance versus magnetic field are found to be highly asymmetricwith the reversal of the direction of magnetic-field (H) well below T<missing VAR>N for bothcompounds, similar to that known for an antiferromagnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(100011, 100011)
 Weattribute these to subtle changes in spin orientations of R<missing VAR> and Fe momentsinduced by T<missing VAR> and H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(100024, 100024)
 Weattribute these to subtle changes in spin orientations of R<missing VAR> and Fe momentsinduced by T<missing VAR> and H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100035, 100035)
Co-doped (La,Sr)TiO3-d a high-Curie temperature diluted magnetic system with large spin-polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100040, 100040)
Co-doped (La,Sr)TiO3-d a high-Curie temperature diluted magnetic system with large spin-polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100042, 100042)
Co-doped (La,Sr)TiO3-d a high-Curie temperature diluted magnetic system with large spin-polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO3-d
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100044, 100048)
Co-doped (La,Sr)TiO3-d a high-Curie temperature diluted magnetic system with large spin-polarization.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100112, 100112)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100117, 100117)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100119, 100119)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO3-d
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100121, 100125)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100129, 100129)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100134, 100134)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100154, 100154)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100192, 100192)
 These TMR experiments have been performed on magnetic tunneljunctions associating Co-LSTO and Co electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100197, 100197)
 These TMR experiments have been performed on magnetic tunneljunctions associating Co-LSTO and Co electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100201, 100201)
 These TMR experiments have been performed on magnetic tunneljunctions associating Co-LSTO and Co electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100215, 100215)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100220, 100220)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100251, 100251)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100259, 100259)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100264, 100264)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100301, 100302)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(100317, 100318)
 Our results argue for the DMOS approach with complexoxide materials in spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure|Hyun Ho Kim,Bowen Yang,Tarun Patel,Francois Sfigakis,Chenghe Li,Shangjie Tian,Hechang Lei,Adam W. Tsen###
(100418, 100420)
 We report the observation of a very large negative magnetoresistance effectin a van der Waals tunnel junction incorporating a thin magnetic semiconductor,CrI3, as the active layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2, 'Tesla', 1]

At
###One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure|Hyun Ho Kim,Bowen Yang,Tarun Patel,Francois Sfigakis,Chenghe Li,Shangjie Tian,Hechang Lei,Adam W. Tsen###
(100432, 100432)
 At constant voltage bias, current increases bynearly one million percent upon application of a 2 Tesla field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'Tesla', 0]

CrI3
###One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure|Hyun Ho Kim,Bowen Yang,Tarun Patel,Francois Sfigakis,Chenghe Li,Shangjie Tian,Hechang Lei,Adam W. Tsen###
(100502, 100504)
 The effectarises from a change between antiparallel to parallel alignment of spins acrossthe different CrI3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, 'Tesla', 1]

CrI3
###One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure|Hyun Ho Kim,Bowen Yang,Tarun Patel,Francois Sfigakis,Chenghe Li,Shangjie Tian,Hechang Lei,Adam W. Tsen###
(100532, 100534)
 Our results elucidate the nature of the magneticstate in ultrathin CrI3 and present new opportunities for spintronics based ontwo-dimensional materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'Tesla', 2]

Co
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(100684, 100684)
 The Brillouin zone spin filtering mechanism of enhanced tunnelingmagnetoresistance (TMR) is described for magnetic tunnel junctions (MTJ) andstudied on an example of the MTJ with hcp Co electrodes and hexagonal BN (h<missing VAR>-BN)spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(100692, 100693)
 The Brillouin zone spin filtering mechanism of enhanced tunnelingmagnetoresistance (TMR) is described for magnetic tunnel junctions (MTJ) andstudied on an example of the MTJ with hcp Co electrodes and hexagonal BN (h<missing VAR>-BN)spacer.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(100699, 100699)
 The Brillouin zone spin filtering mechanism of enhanced tunnelingmagnetoresistance (TMR) is described for magnetic tunnel junctions (MTJ) andstudied on an example of the MTJ with hcp Co electrodes and hexagonal BN (h<missing VAR>-BN)spacer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(100809, 100810)
 Owning to the specificcomplex band structure of the h<missing VAR>-BN the spin-dependent tunneling conductance ofthe system is ultra-sensitive to small variations of the Fermi energy positioninside the BN band gap.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(100856, 100857)
 Owning to the specificcomplex band structure of the h<missing VAR>-BN the spin-dependent tunneling conductance ofthe system is ultra-sensitive to small variations of the Fermi energy positioninside the BN band gap.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(100870, 100871)
 Doping of the BN and, consequentially, changing theFermi energy position could lead to variation of the TMR by several orders ofmagnitude.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(101004, 101004)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(101006, 101006)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(101010, 101010)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(101012, 101012)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(101028, 101029)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(101062, 101062)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101125, 101125)
 We inserted non-magnetic layers of Au and Cu into sputtered AlOx-basedmagnetic tunnel junctions and Meservey-Tedrow junctions in order to study theireffect on tunnelling magnetoresistance (TMR) and spin polarization (T<missing VAR>SP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 0.1, 'nm', 5]

Cu
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101129, 101129)
 We inserted non-magnetic layers of Au and Cu into sputtered AlOx-basedmagnetic tunnel junctions and Meservey-Tedrow junctions in order to study theireffect on tunnelling magnetoresistance (TMR) and spin polarization (T<missing VAR>SP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 0.1, 'nm', 5]

Al
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101135, 101135)
 We inserted non-magnetic layers of Au and Cu into sputtered AlOx-basedmagnetic tunnel junctions and Meservey-Tedrow junctions in order to study theireffect on tunnelling magnetoresistance (TMR) and spin polarization (T<missing VAR>SP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 0.1, 'nm', 5]

P
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101189, 101189)
 We inserted non-magnetic layers of Au and Cu into sputtered AlOx-basedmagnetic tunnel junctions and Meservey-Tedrow junctions in order to study theireffect on tunnelling magnetoresistance (TMR) and spin polarization (T<missing VAR>SP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 0.1, 'nm', 5]

Au
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101198, 101198)
 Wheneither Au or Cu are inserted into a Co/AlOx interface, we find that TMR and T<missing VAR>SPremain finite and measurable for thicknesses up to several nanometres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 0.1, 'nm', 4]

Cu
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101202, 101202)
 Wheneither Au or Cu are inserted into a Co/AlOx interface, we find that TMR and T<missing VAR>SPremain finite and measurable for thicknesses up to several nanometres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 0.1, 'nm', 4]

Co/Al
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101212, 101214)
 Wheneither Au or Cu are inserted into a Co/AlOx interface, we find that TMR and T<missing VAR>SPremain finite and measurable for thicknesses up to several nanometres.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[262.0, 0.1, 'nm', 4]

SP
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101233, 101234)
 Wheneither Au or Cu are inserted into a Co/AlOx interface, we find that TMR and T<missing VAR>SPremain finite and measurable for thicknesses up to several nanometres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 0.1, 'nm', 4]

Cu
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101275, 101275)
High-resolution transmission electron microscopy shows that the Cu and Auinterface layers are fully continuous when their thickness exceeds 3 nm,implying that spin-polarized carriers penetrate the interface noble metal todis- tances exceeding this value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 0.1, 'nm', 3]

Au
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101279, 101279)
High-resolution transmission electron microscopy shows that the Cu and Auinterface layers are fully continuous when their thickness exceeds 3 nm,implying that spin-polarized carriers penetrate the interface noble metal todis- tances exceeding this value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 0.1, 'nm', 3]

Cu
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101480, 101480)
 Whena 0.1 nm thick Cu or Au layer is inserted within the Co, we find that thesuppression of TMR and T<missing VAR>SP is restored on a length scale of <1 nm, indicatingthat this is a sufficient quantity of Co to form a fully spin-polarized bandstructure at the interface with the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.1, 'nm', 0]

Au
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101484, 101484)
 Whena 0.1 nm thick Cu or Au layer is inserted within the Co, we find that thesuppression of TMR and T<missing VAR>SP is restored on a length scale of <1 nm, indicatingthat this is a sufficient quantity of Co to form a fully spin-polarized bandstructure at the interface with the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.1, 'nm', 0]

Co
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101496, 101496)
 Whena 0.1 nm thick Cu or Au layer is inserted within the Co, we find that thesuppression of TMR and T<missing VAR>SP is restored on a length scale of <1 nm, indicatingthat this is a sufficient quantity of Co to form a fully spin-polarized bandstructure at the interface with the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.1, 'nm', 0]

SP
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101519, 101520)
 Whena 0.1 nm thick Cu or Au layer is inserted within the Co, we find that thesuppression of TMR and T<missing VAR>SP is restored on a length scale of <1 nm, indicatingthat this is a sufficient quantity of Co to form a fully spin-polarized bandstructure at the interface with the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.1, 'nm', 0]

Co
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(101559, 101559)
 Whena 0.1 nm thick Cu or Au layer is inserted within the Co, we find that thesuppression of TMR and T<missing VAR>SP is restored on a length scale of <1 nm, indicatingthat this is a sufficient quantity of Co to form a fully spin-polarized bandstructure at the interface with the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.1, 'nm', 0]

(CrI3)
###Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction|Tiancheng Song,Matisse Wei-Yuan Tu,Caitlin Carnahan,Xinghan Cai,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(101634, 101638)
 Atomically thin chromium triiodide (CrI3) has recently been identified as alayered antiferromagnetic insulator, in which adjacent ferromagnetic monolayersare antiferromagnetically coupled.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 17, ',', 4],[269.0, 0, '%', 4],[274.0, 57, ',', 4],[276.0, 0, '%', 4]

CrI3
###Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction|Tiancheng Song,Matisse Wei-Yuan Tu,Caitlin Carnahan,Xinghan Cai,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(101771, 101773)
 Here we report voltage control of TMR formed byfour-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gatedstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 17, ',', 2],[134.0, 0, '%', 2],[139.0, 57, ',', 2],[141.0, 0, '%', 2]

In
###Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction|Tiancheng Song,Matisse Wei-Yuan Tu,Caitlin Carnahan,Xinghan Cai,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(101874, 101874)
 In addition, without switching the state, the TMR can be continuouslymodulated between 17,000% and 57,000%, due to the combination of spin-dependenttunnel barrier with changing carrier distributions in the graphene contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 17, ',', 0],[33.0, 0, '%', 0],[38.0, 57, ',', 0],[40.0, 0, '%', 0]

N
###Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer|Ali A. Shokri,Alireza Saffarzadeh###
(102107, 102107)
 The temperature and voltage dependence of spin transport is theoreticallyinvestigated in a new type of magnetic tunnel junction, which consists of twoferromagnetic outer electrodes separated by a ferromagnetic barrier and anonmagnetic (NM) metallic spacer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 270, '%', 5],[227.0, 25, '%', 5]

N
###Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer|Ali A. Shokri,Alireza Saffarzadeh###
(102258, 102258)
 The TMR and spin polarization atdifferent temperatures show an oscillatory behavior as a function of the NM<missing VAR>spacer thickness.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 270, '%', 2],[76.0, 25, '%', 2]

K
###Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer|Ali A. Shokri,Alireza Saffarzadeh###
(102329, 102329)
 The maximum TMR value, variesapproximately from 270% in reverse bias (at T<missing VAR>0 K) to 25% in forward bias (atT<missing VAR>geq T<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 270, '%', 0],[5.0, 25, '%', 0]

C
###Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer|Ali A. Shokri,Alireza Saffarzadeh###
(102351, 102351)
 The maximum TMR value, variesapproximately from 270% in reverse bias (at T<missing VAR>0 K) to 25% in forward bias (atT<missing VAR>geq T<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 270, '%', 0],[17.0, 25, '%', 0]

LaMnO3
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102381, 102384)
Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xSr
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102410, 102414)
 A spin-tunnel-junction based on manganites, with La1-xSrx<missing VAR>MnO3(LSMO) as ferromagnetic metallic electrodes and the undoped parent compoundLaMnO3 (LMO) as insulating barrier, is here theoretically discussed usingdouble exchange model Hamiltonians and numerical techniques.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102416, 102418)
 A spin-tunnel-junction based on manganites, with La1-xSrx<missing VAR>MnO3(LSMO) as ferromagnetic metallic electrodes and the undoped parent compoundLaMnO3 (LMO) as insulating barrier, is here theoretically discussed usingdouble exchange model Hamiltonians and numerical techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102425, 102425)
 A spin-tunnel-junction based on manganites, with La1-xSrx<missing VAR>MnO3(LSMO) as ferromagnetic metallic electrodes and the undoped parent compoundLaMnO3 (LMO) as insulating barrier, is here theoretically discussed usingdouble exchange model Hamiltonians and numerical techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102447, 102450)
 A spin-tunnel-junction based on manganites, with La1-xSrx<missing VAR>MnO3(LSMO) as ferromagnetic metallic electrodes and the undoped parent compoundLaMnO3 (LMO) as insulating barrier, is here theoretically discussed usingdouble exchange model Hamiltonians and numerical techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102455, 102455)
 A spin-tunnel-junction based on manganites, with La1-xSrx<missing VAR>MnO3(LSMO) as ferromagnetic metallic electrodes and the undoped parent compoundLaMnO3 (LMO) as insulating barrier, is here theoretically discussed usingdouble exchange model Hamiltonians and numerical techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102504, 102504)
 For an even numberof LMO layers, the ground state is shown to have anti-parallel LSMO magneticmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102530, 102530)
 For an even numberof LMO layers, the ground state is shown to have anti-parallel LSMO magneticmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102577, 102577)
 This highly resistive, but fragile, state is easily destabilized bysmall magnetic fields, which orient the LSMO moments in the direction of thefield.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102662, 102662)
 Theinfluence of temperature, the case of an odd number of LMO layers, and thedifferences between LMO and SrTiO3 as barriers are also addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102678, 102678)
 Theinfluence of temperature, the case of an odd number of LMO layers, and thedifferences between LMO and SrTiO3 as barriers are also addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(102682, 102685)
 Theinfluence of temperature, the case of an odd number of LMO layers, and thedifferences between LMO and SrTiO3 as barriers are also addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(102720, 102722)
Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(102747, 102747)
 In recent years, it is evidenced that the individuals newly infected HIV aretransmitting the virus prior to knowing their HIV status.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(102770, 102772)
 In recent years, it is evidenced that the individuals newly infected HIV aretransmitting the virus prior to knowing their HIV status.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(102791, 102793)
 In recent years, it is evidenced that the individuals newly infected HIV aretransmitting the virus prior to knowing their HIV status.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(102815, 102817)
 Identifyingindividuals that are early in infection with HIV antibody negative (windowperiod) remains problematic.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(102835, 102835)
 In the newly infected individuals, HIV antigen p<missing VAR>24is usually present in their serum or plasma 7-10 days before the HIV antibody.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(102846, 102848)
 In the newly infected individuals, HIV antigen p<missing VAR>24is usually present in their serum or plasma 7-10 days before the HIV antibody.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(102882, 102884)
 In the newly infected individuals, HIV antigen p<missing VAR>24is usually present in their serum or plasma 7-10 days before the HIV antibody.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(103033, 103033)
 In this study, a p<missing VAR>24 detection assayusing MgO-based magnetic tunnel junction (MTJ) sensor and 20-nm magneticnanoparticles is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(103052, 103053)
 In this study, a p<missing VAR>24 detection assayusing MgO-based magnetic tunnel junction (MTJ) sensor and 20-nm magneticnanoparticles is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaMnAs
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(103117, 103119)
Perspectives in spintronics magnetic resonant tunneling, spin-orbit coupling, and GaMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(103218, 103218)
 While branching into new areasand creating new themes over the past years, the principal goals remain thespin and magnetic control of the electrical properties, essentially the I-Vcharacteristics, and vice versa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(103220, 103220)
 While branching into new areasand creating new themes over the past years, the principal goals remain thespin and magnetic control of the electrical properties, essentially the I-Vcharacteristics, and vice versa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaMnAs
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(103279, 103281)
 One challenge is to find niche applications for ferromagneticsemiconductors, such as GaMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(103457, 103460)
 We also discuss the phenomenon oftunneling anisotropic magnetoresistance in Fe/GaAs junctions by introducing theconcept of the spin-orbit coupling field, as an analog of such fields inall-semiconductor junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaMnAs
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(103530, 103532)
 Finally, we look at fundamental electronic andoptical properties of GaMnAs by employing reasonable tight-binding models tostudy disorder efiects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104265, 104267)
Physical Vapor Transport Growth of Antiferromagnetic CrCl3 Flakes Down to Monolayer Thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[409.0, 17, 'K', 8],[434.0, 2, 'D', 9]

Cr
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104290, 104290)
 The van der Waals magnets CrX<missing VAR>3 (X<missing VAR>  I, Br, and Cl) exhibit highly tunablemagnetic properties and are promising candidates for developing noveltwo-dimensional (2D) magnetic devices such as magnetic tunnel junctions andspin tunneling transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 17, 'K', 7],[411.0, 2, 'D', 8]

I
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104298, 104298)
 The van der Waals magnets CrX<missing VAR>3 (X<missing VAR>  I, Br, and Cl) exhibit highly tunablemagnetic properties and are promising candidates for developing noveltwo-dimensional (2D) magnetic devices such as magnetic tunnel junctions andspin tunneling transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 17, 'K', 7],[403.0, 2, 'D', 8]

Br
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104301, 104301)
 The van der Waals magnets CrX<missing VAR>3 (X<missing VAR>  I, Br, and Cl) exhibit highly tunablemagnetic properties and are promising candidates for developing noveltwo-dimensional (2D) magnetic devices such as magnetic tunnel junctions andspin tunneling transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 17, 'K', 7],[400.0, 2, 'D', 8]

Cl
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104306, 104306)
 The van der Waals magnets CrX<missing VAR>3 (X<missing VAR>  I, Br, and Cl) exhibit highly tunablemagnetic properties and are promising candidates for developing noveltwo-dimensional (2D) magnetic devices such as magnetic tunnel junctions andspin tunneling transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 17, 'K', 7],[395.0, 2, 'D', 8]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104374, 104376)
 Previous studies of CrCl3 have mainly focused onmechanically exfoliated samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 17, 'K', 6],[325.0, 2, 'D', 7]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104454, 104456)
 Here, we report the growth of large CrCl3flakes with well-defined facets down to monolayer thickness (0.6 nm) via thephysical vapor transport technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 17, 'K', 4],[245.0, 2, 'D', 5]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104562, 104564)
 High-resolution transmission electron microscopy studiesshow that the CrCl3 flakes are single crystalline in the monoclinicstructure, consistent with the Raman results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 17, 'K', 2],[137.0, 2, 'D', 3]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104608, 104610)
 The room temperature stability ofthe CrCl3 flakes decreases with decreasing thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 17, 'K', 1],[91.0, 2, 'D', 2]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104634, 104636)
 The tunnelingmagnetoresistance of graphite/CrCl3/graphite tunnel junctions confirms thatfew-layer CrCl3 possesses in-plane magnetic anisotropy and Neeltemperature of 17 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 17, 'K', 0],[65.0, 2, 'D', 1]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104653, 104655)
 The tunnelingmagnetoresistance of graphite/CrCl3/graphite tunnel junctions confirms thatfew-layer CrCl3 possesses in-plane magnetic anisotropy and Neeltemperature of 17 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 17, 'K', 0],[46.0, 2, 'D', 1]

N
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104669, 104669)
 The tunnelingmagnetoresistance of graphite/CrCl3/graphite tunnel junctions confirms thatfew-layer CrCl3 possesses in-plane magnetic anisotropy and Neeltemperature of 17 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 17, 'K', 0],[32.0, 2, 'D', 1]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(104693, 104695)
 Our study paves the path for developing CrCl3-basedscalable 2D spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 17, 'K', 1],[6.0, 2, 'D', 0]

Co2FeAl
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(105244, 105247)
 Here, fromfirst-principles, we investigate thermal stability (both structure andmagnetization) and the electric field control of magnetic anisotropy on Co2FeAl(CFA)/MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CF
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(105251, 105252)
 Here, fromfirst-principles, we investigate thermal stability (both structure andmagnetization) and the electric field control of magnetic anisotropy on Co2FeAl(CFA)/MgO.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(105256, 105257)
 Here, fromfirst-principles, we investigate thermal stability (both structure andmagnetization) and the electric field control of magnetic anisotropy on Co2FeAl(CFA)/MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CF
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(105278, 105279)
 A phase diagram of structural thermal stability of the CFA/MgOinterface is illustrated.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(105282, 105283)
 A phase diagram of structural thermal stability of the CFA/MgOinterface is illustrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(105309, 105309)
 An interfacial perpendicular-anisotropy, coming fromthe Fe-O orbital hybridization, provides high magnetic thermal stability and alow stray field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(105311, 105311)
 An interfacial perpendicular-anisotropy, coming fromthe Fe-O orbital hybridization, provides high magnetic thermal stability and alow stray field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(105392, 105392)
 We find an electric-field-induced giant modification of suchperpendicular-anisotropy via a great magnetoelectric effect (the anisotropyenergy coefficient beta10-7 erg/V cm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CF
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(105440, 105441)
 Our spin electronic-structure andnon-collinear transport calculations indicate high spin-polarized interfacialstates and good magnetoresistance properties of CFA/MgO/CFA perpendicularmagnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CF
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(105444, 105448)
 Our spin electronic-structure andnon-collinear transport calculations indicate high spin-polarized interfacialstates and good magnetoresistance properties of CFA/MgO/CFA perpendicularmagnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

U
###Spin dependent transport of ``nonmagnetic metal/zigzag nanotube encapsulating magnetic atoms/nonmagnetic metal'' junctions|Satoshi Kokado,Kikuo Harigaya###
(105616, 105616)
 When the on-site Coulomb energy divided by themagnitude of transfer integral, U/t<missing VAR>, is larger than 0.8, large MR effectdue to the direction of spins of magnetic atoms, which has the magnitude of theMR ratio of about 100%, appears reflecting such spin-polarized edges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.8, ',', 0],[63.0, 100, '%', 0]

CoPt
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(105730, 105731)
Prospect for room temperature tunneling anisotropic magnetoresistance effect density of states anisotropies in CoPt systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(105760, 105760)
 Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in(Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling andreflects the dependence of the tunneling density of states in a ferromagneticlayer on orientation of the magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(105762, 105762)
 Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in(Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling andreflects the dependence of the tunneling density of states in a ferromagneticlayer on orientation of the magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(105764, 105764)
 Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in(Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling andreflects the dependence of the tunneling density of states in a ferromagneticlayer on orientation of the magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(105954, 105954)
We focus on several model systems ranging from simple hcp-Co to more complexferromagnetic structures with enhanced spin-orbit coupling, namely bulk andthin film L<missing VAR>10-CoPt ordered alloys and a monatomic-Co chain at a Pt surfacestep edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoPt
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(105993, 105994)
We focus on several model systems ranging from simple hcp-Co to more complexferromagnetic structures with enhanced spin-orbit coupling, namely bulk andthin film L<missing VAR>10-CoPt ordered alloys and a monatomic-Co chain at a Pt surfacestep edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(106006, 106006)
We focus on several model systems ranging from simple hcp-Co to more complexferromagnetic structures with enhanced spin-orbit coupling, namely bulk andthin film L<missing VAR>10-CoPt ordered alloys and a monatomic-Co chain at a Pt surfacestep edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(106014, 106014)
We focus on several model systems ranging from simple hcp-Co to more complexferromagnetic structures with enhanced spin-orbit coupling, namely bulk andthin film L<missing VAR>10-CoPt ordered alloys and a monatomic-Co chain at a Pt surfacestep edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Transfer Torque and Tunneling Magnetoresistance Dependences on the Finite Bias Voltages and Insulator Barrier Energy|Chun-Yeol You,Jae-Ho Han,Hyun-Woo Lee###
(106146, 106146)
 We investigate the dependence of perpendicular and parallel spin transfertorque (STT) and tunneling magnetoresistance (TMR) on the insulator barrierenergy in the magnetic tunnel junction (MTJ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Transfer Torque and Tunneling Magnetoresistance Dependences on the Finite Bias Voltages and Insulator Barrier Energy|Chun-Yeol You,Jae-Ho Han,Hyun-Woo Lee###
(106242, 106242)
 We employed single orbit tightbinding model combined with the Keldysh non-equilibrium Greens<missing VAR> function methodin order to calculate the perpendicular and parallel STT, and TMR in MTJ withthe finite bias voltages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Transfer Torque and Tunneling Magnetoresistance Dependences on the Finite Bias Voltages and Insulator Barrier Energy|Chun-Yeol You,Jae-Ho Han,Hyun-Woo Lee###
(106277, 106277)
 The dependences of STT and TMR on the insulatorbarrier energy are calculated for the semi-infinite half metallic ferromagneticelectrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Transfer Torque and Tunneling Magnetoresistance Dependences on the Finite Bias Voltages and Insulator Barrier Energy|Chun-Yeol You,Jae-Ho Han,Hyun-Woo Lee###
(106338, 106338)
 We find that perfect linear relation between the parallel STT andthe tunneling current for the wide range of the insulator barrier energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(106433, 106433)
 In the past few years the phenomenon of spin dependent tunneling (SDT) inmagnetic tunnel junctions (MTJs) has aroused enormous interest and hasdeveloped into a vigorous field of research.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(106456, 106456)
 In the past few years the phenomenon of spin dependent tunneling (SDT) inmagnetic tunnel junctions (MTJs) has aroused enormous interest and hasdeveloped into a vigorous field of research.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(106584, 106584)
 Thisled to a number of fundamental questions regarding the phenomenon of SDT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(106642, 106642)
 In this paper we considerdifferent models which suggest that the spin polarization is primarilydetermined by the electronic and atomic structure of the ferromagnet/insulatorinterfaces rather than by their bulk properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(106835, 106835)
 The decisiverole of the interfaces is further supported by studies of spin-dependenttunneling within realistic first-principles models of Co/vacuum/Al,Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(106839, 106839)
 The decisiverole of the interfaces is further supported by studies of spin-dependenttunneling within realistic first-principles models of Co/vacuum/Al,Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al2O3/Co
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(106843, 106850)
 The decisiverole of the interfaces is further supported by studies of spin-dependenttunneling within realistic first-principles models of Co/vacuum/Al,Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO/Fe
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(106853, 106858)
 The decisiverole of the interfaces is further supported by studies of spin-dependenttunneling within realistic first-principles models of Co/vacuum/Al,Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/SrTiO3/Co
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(106863, 106870)
 The decisiverole of the interfaces is further supported by studies of spin-dependenttunneling within realistic first-principles models of Co/vacuum/Al,Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Angular dependence of the tunneling anisotropic magnetoresistance|A. Matos-Abiague,M. Gmitra,J. Fabian###
(107248, 107248)
 In particular, we predict the forms ofthe angular dependence of the TAMR in (001),(110), and (111) MTJs withstructure inversion asymmetry and/or bulk inversion asymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 99, ',', 1]

F
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(107393, 107393)
 Spintronic devices based on antiferromagnetic (AFM) materials hold thepromise of fast switching speeds and robustness against magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 60, 'T', 4],[378.0, 11.2, '%', 7]

F
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(107455, 107455)
Different device concepts have been predicted and experimentally demonstrated,such as low-temperature AFM<missing VAR> tunnel junctions that operate as spin-valves, orroom-temperature AFM<missing VAR> memory, for which either thermal heating in combinationwith magnetic fields, or Neel spin-orbit torque is used for the informationwriting process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 60, 'T', 3],[316.0, 11.2, '%', 6]

F
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(107481, 107481)
Different device concepts have been predicted and experimentally demonstrated,such as low-temperature AFM<missing VAR> tunnel junctions that operate as spin-valves, orroom-temperature AFM<missing VAR> memory, for which either thermal heating in combinationwith magnetic fields, or Neel spin-orbit torque is used for the informationwriting process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 60, 'T', 3],[290.0, 11.2, '%', 6]

N
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(107511, 107511)
Different device concepts have been predicted and experimentally demonstrated,such as low-temperature AFM<missing VAR> tunnel junctions that operate as spin-valves, orroom-temperature AFM<missing VAR> memory, for which either thermal heating in combinationwith magnetic fields, or Neel spin-orbit torque is used for the informationwriting process.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 60, 'T', 3],[260.0, 11.2, '%', 6]

N
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(107642, 107642)
 Here, we combine the two material classesto explore changes of the resistance of the high-Neel-temperatureantiferromagnet MnPt induced by piezoelectric strain.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 60, 'T', 1],[129.0, 11.2, '%', 4]

MnPt
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(107650, 107651)
 Here, we combine the two material classesto explore changes of the resistance of the high-Neel-temperatureantiferromagnet MnPt induced by piezoelectric strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 60, 'T', 1],[120.0, 11.2, '%', 4]

F
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(107799, 107799)
 Overall, we demonstrate apiezoelectric, strain-controlled AFM<missing VAR> memory which is fully operational instrong magnetic fields and has potential for low-energy and high-density memoryapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 60, 'T', 4],[28.0, 11.2, '%', 1]

In
###Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers|Alan Kalitsov,Pierre-Jean Zermatten,Frédéric Bonell,Gilles Gaudin,Stéphane Andrieu,Coriolan Tiusan,Mairbek Chshiev,Julian P. Velev###
(107912, 107912)
 In this work we investigate bothexperimentally and theoretically the effect of asymmetric barrier modificationson the bias dependence of tunneling magnetoresistance (TMR) in single crystalFe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii)with a monolayer of O deposited at the crystalline interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers|Alan Kalitsov,Pierre-Jean Zermatten,Frédéric Bonell,Gilles Gaudin,Stéphane Andrieu,Coriolan Tiusan,Mairbek Chshiev,Julian P. Velev###
(107971, 107974)
 In this work we investigate bothexperimentally and theoretically the effect of asymmetric barrier modificationson the bias dependence of tunneling magnetoresistance (TMR) in single crystalFe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii)with a monolayer of O deposited at the crystalline interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers|Alan Kalitsov,Pierre-Jean Zermatten,Frédéric Bonell,Gilles Gaudin,Stéphane Andrieu,Coriolan Tiusan,Mairbek Chshiev,Julian P. Velev###
(108015, 108015)
 In this work we investigate bothexperimentally and theoretically the effect of asymmetric barrier modificationson the bias dependence of tunneling magnetoresistance (TMR) in single crystalFe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii)with a monolayer of O deposited at the crystalline interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers|Alan Kalitsov,Pierre-Jean Zermatten,Frédéric Bonell,Gilles Gaudin,Stéphane Andrieu,Coriolan Tiusan,Mairbek Chshiev,Julian P. Velev###
(108028, 108028)
 In both cases weobserve an asymmetric bias dependence of TMR and a reversal of its sign atlarge bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers|Alan Kalitsov,Pierre-Jean Zermatten,Frédéric Bonell,Gilles Gaudin,Stéphane Andrieu,Coriolan Tiusan,Mairbek Chshiev,Julian P. Velev###
(108276, 108276)
 In the resonant regime inversionof TMR could happen at zero voltage depending on the alignment of the resonancelevels with the Fermi surfaces of the electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(108714, 108714)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(108729, 108729)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(108760, 108760)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(108783, 108783)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(108805, 108805)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(108827, 108827)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(108833, 108833)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(108869, 108870)
 They are both in agreement with the experiments of the MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Structural relaxation effects on interface and transport properties of Fe/MgO(001) tunnel junctions|Xiaobing Feng,O. Bengone,M. Alouani,S. Lebégue,I. Rungger,S. Sanvito###
(109068, 109068)
 As a consequence, the electronic transport is found to beextremely sensitive to the interface structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Structural relaxation effects on interface and transport properties of Fe/MgO(001) tunnel junctions|Xiaobing Feng,O. Bengone,M. Alouani,S. Lebégue,I. Rungger,S. Sanvito###
(109103, 109103)
 In particular, the conductancefor the LSDA-relaxed geometry is about one order of magnitude smaller than thatof the GGA-relaxed one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo/MgO/FeCo
###Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies|Christian Franz,Michael Czerner,Christian Heiliger###
(109277, 109284)
 The dependence of tunneling magnetoresistance and spin-transfer torque inFeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage areinvestigated ab initio.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies|Christian Franz,Michael Czerner,Christian Heiliger###
(109294, 109294)
 The dependence of tunneling magnetoresistance and spin-transfer torque inFeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage areinvestigated ab initio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies|Christian Franz,Michael Czerner,Christian Heiliger###
(109335, 109335)
 We find that the tunneling magnetoresistance decreaseswith the Co concentration in contradiction with previous calculations but inagreement with recent experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies|Christian Franz,Michael Czerner,Christian Heiliger###
(109540, 109540)
 In particular, the linear slope of the in-plane torqueis independent of the concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies|Christian Franz,Michael Czerner,Christian Heiliger###
(109612, 109612)
 For high bias voltages the in-plane torqueshows a strong nonlinear deviation from the linear slope for high Coconcentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ce0.3MnO3
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(109674, 109680)
Observation of minority spin character of the new electron doped manganite La0.7Ce0.3MnO3 from tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.7Ce0.3MnO3)
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(109724, 109732)
 We report the magnetotransport characteristics of a trilayer ferromagnetictunnel junction build of an electron doped manganite (La0.7Ce0.3MnO3) and ahole doped manganite (La0.7Ca0.3MnO3).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.7Ca0.3MnO3)
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(109745, 109753)
 We report the magnetotransport characteristics of a trilayer ferromagnetictunnel junction build of an electron doped manganite (La0.7Ce0.3MnO3) and ahole doped manganite (La0.7Ca0.3MnO3).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(109756, 109756)
 At low temperatures the junctionexhibits a large positive tunneling magnetoresistance (TMR), irrespective ofthe bias voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(109798, 109798)
 At intermediate temperatures below T<missing VAR>C the sign of the TMR isdependent on the bias voltage across the junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(109807, 109807)
 At intermediate temperatures below T<missing VAR>C the sign of the TMR isdependent on the bias voltage across the junction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ce0.3MnO3
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(109860, 109866)
 The magnetoresistivecharacteristics of the junction strongly suggest that La0.7Ce0.3MnO3 is aminority spin carrier ferromagnet with a high degree of spin polarization, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe/MoS2/NiFe
###Spin-valve Effect in NiFe/MoS2/NiFe Junctions|Weiyi Wang,Awadhesh Narayan,Lei Tang,Kapildeb Dolui,Yanwen Liu,Xiang Yuan,Yibo Jin,Yizheng Wu,Ivan Rungger,Stefano Sanvito,Faxian Xiu###
(109927, 109935)
Spin-valve Effect in NiFe/MoS2/NiFe Junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[254.0, 0.73, '%', 5],[303.0, 9, '%', 6]

Ds
###Spin-valve Effect in NiFe/MoS2/NiFe Junctions|Weiyi Wang,Awadhesh Narayan,Lei Tang,Kapildeb Dolui,Yanwen Liu,Xiang Yuan,Yibo Jin,Yizheng Wu,Ivan Rungger,Stefano Sanvito,Faxian Xiu###
(109960, 109960)
 Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) havebeen recently proposed as appealing candidate materials for spintronicapplications owing to their distinctive atomic crystal structure and exoticphysical properties arising from the large bonding anisotropy.
EXCEPTION 3: IndexError for Ds
MoS2
[229.0, 0.73, '%', 4],[278.0, 9, '%', 5]

Ar
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110347, 110347)
 The impact of 400 keV Ar ion irradiation on the magnetic and electricalproperties of in-plane magnetized magnetic tunnel junction (MTJ) stacks wasinvestigated by ferromagnetic resonance, vibrating sample magnetometry andcurrent-in-plane tunneling techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 400, 'keV', 0],[165.0, -2, ',', 2],[305.0, -2, ',', 3]

In
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110492, 110492)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 400, 'keV', 2],[20.0, -2, ',', 0],[160.0, -2, ',', 1]

FeCoB
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110547, 110549)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 400, 'keV', 2],[35.0, -2, ',', 0],[103.0, -2, ',', 1]

F
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110556, 110556)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 400, 'keV', 2],[44.0, -2, ',', 0],[96.0, -2, ',', 1]

S
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110584, 110584)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 400, 'keV', 2],[72.0, -2, ',', 0],[68.0, -2, ',', 1]

I
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110608, 110608)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 400, 'keV', 2],[96.0, -2, ',', 0],[44.0, -2, ',', 1]

C
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110610, 110610)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 400, 'keV', 2],[98.0, -2, ',', 0],[42.0, -2, ',', 1]

B
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110624, 110624)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 400, 'keV', 2],[112.0, -2, ',', 0],[28.0, -2, ',', 1]

In
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110632, 110632)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 400, 'keV', 3],[120.0, -2, ',', 1],[20.0, -2, ',', 0]

F
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110676, 110676)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 400, 'keV', 3],[164.0, -2, ',', 1],[24.0, -2, ',', 0]

S
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110700, 110700)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 400, 'keV', 3],[188.0, -2, ',', 1],[48.0, -2, ',', 0]

F
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110724, 110724)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 400, 'keV', 3],[212.0, -2, ',', 1],[72.0, -2, ',', 0]

Ta
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110731, 110731)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 400, 'keV', 3],[219.0, -2, ',', 1],[79.0, -2, ',', 0]

B
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110739, 110739)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[394.0, 400, 'keV', 3],[227.0, -2, ',', 1],[87.0, -2, ',', 0]

I
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110743, 110743)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 400, 'keV', 3],[231.0, -2, ',', 1],[91.0, -2, ',', 0]

C
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110745, 110745)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 400, 'keV', 3],[233.0, -2, ',', 1],[93.0, -2, ',', 0]

MgO
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110806, 110807)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[461.0, 400, 'keV', 3],[294.0, -2, ',', 1],[154.0, -2, ',', 0]

MgO/FeCoB
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110813, 110818)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[468.0, 400, 'keV', 3],[301.0, -2, ',', 1],[161.0, -2, ',', 0]

F
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(110838, 110838)
 We demonstrate thatthe layers surrounding the FL<missing VAR> play a decisive role in determining the trend ofthe magnetic anisotropy evolution resulting from the irradiation, and that anion-fluence window exists where such a modulation of magnetic anisotropy canoccur, while not losing the TMR or the magnetic configuration of the MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[493.0, 400, 'keV', 4],[326.0, -2, ',', 2],[186.0, -2, ',', 1]

CoFeB/MgO/CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(110961, 110970)
Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[9.0, 300, 'mm', 0],[59.0, 300, 'mm', 1],[140.0, 100, 'K', 3],[167.0, 214, 'uJ', 3],[195.0, -45, 'fJ', 3]

CoFeB/MgO/CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(111005, 111014)
 We developed a cryogenic temperature deposition process for high-performanceCoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidizedsilicon wafers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[26.0, 300, 'mm', 1],[15.0, 300, 'mm', 0],[96.0, 100, 'K', 2],[123.0, 214, 'uJ', 2],[151.0, -45, 'fJ', 2]

CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(111057, 111059)
 The effect of the deposition temperature of the CoFeB layers onthe nanostructure, magnetic and magneto-transport properties of the MTJs wereinvestigated in detail.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 300, 'mm', 2],[28.0, 300, 'mm', 1],[51.0, 100, 'K', 1],[78.0, 214, 'uJ', 1],[106.0, -45, 'fJ', 1]

CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(111101, 111103)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 300, 'mm', 3],[72.0, 300, 'mm', 2],[7.0, 100, 'K', 0],[34.0, 214, 'uJ', 0],[62.0, -45, 'fJ', 0]

P
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(111131, 111131)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 300, 'mm', 3],[102.0, 300, 'mm', 2],[21.0, 100, 'K', 0],[6.0, 214, 'uJ', 0],[34.0, -45, 'fJ', 0]

VC
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(111156, 111157)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 300, 'mm', 3],[127.0, 300, 'mm', 2],[46.0, 100, 'K', 0],[19.0, 214, 'uJ', 0],[8.0, -45, 'fJ', 0]

P
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(111188, 111188)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 300, 'mm', 3],[159.0, 300, 'mm', 2],[78.0, 100, 'K', 0],[51.0, 214, 'uJ', 0],[23.0, -45, 'fJ', 0]

VC
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(111194, 111195)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 300, 'mm', 3],[165.0, 300, 'mm', 2],[84.0, 100, 'K', 0],[57.0, 214, 'uJ', 0],[29.0, -45, 'fJ', 0]

CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(111222, 111224)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 300, 'mm', 3],[193.0, 300, 'mm', 2],[112.0, 100, 'K', 0],[85.0, 214, 'uJ', 0],[57.0, -45, 'fJ', 0]

MgO/CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(111305, 111310)
 The interface-sensitivemagneto-transport properties indicated that interfacial qualities such asintermixing and oxidation states at the MgO/CoFeB interfaces were improved bythe cryogenic temperature deposition.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[326.0, 300, 'mm', 5],[276.0, 300, 'mm', 4],[195.0, 100, 'K', 2],[168.0, 214, 'uJ', 2],[140.0, -45, 'fJ', 2]

CoFeB/Ru/CoFeB
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(111383, 111391)
Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[99.0, 1.1, 'nm', 2],[138.0, 1.1, 'nm', 3],[213.0, 300, 'degree', 5],[225.0, 350, 'degree', 5],[290.0, 50, '%', 6]

CoFeB
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(111419, 111421)
 This work reports on the magnetic interlayer coupling between two amorphousCoFeB layers, separated by a thin Ru spacer.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1.1, 'nm', 1],[108.0, 1.1, 'nm', 2],[183.0, 300, 'degree', 4],[195.0, 350, 'degree', 4],[260.0, 50, '%', 5]

Ru
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(111434, 111434)
 This work reports on the magnetic interlayer coupling between two amorphousCoFeB layers, separated by a thin Ru spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1.1, 'nm', 1],[95.0, 1.1, 'nm', 2],[170.0, 300, 'degree', 4],[182.0, 350, 'degree', 4],[247.0, 50, '%', 5]

Ru
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(111464, 111464)
 We observe an antiferromagneticcoupling which oscillates as a function of the Ru thickness x<missing VAR>, with the secondantiferromagnetic maximum found for x<missing VAR>1.0 to 1.1 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1.1, 'nm', 0],[65.0, 1.1, 'nm', 1],[140.0, 300, 'degree', 3],[152.0, 350, 'degree', 3],[217.0, 50, '%', 4]

CoFeB/Ru/CoFeB
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(111508, 111516)
 We have studied theswitching of a CoFeB/Ru/CoFeB trilayer for a Ru thickness of 1.1 nm and foundthat the coercivity depends on the net magnetic moment, i.e.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[18.0, 1.1, 'nm', 1],[13.0, 1.1, 'nm', 0],[88.0, 300, 'degree', 2],[100.0, 350, 'degree', 2],[165.0, 50, '%', 3]

Ru
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(111524, 111524)
 We have studied theswitching of a CoFeB/Ru/CoFeB trilayer for a Ru thickness of 1.1 nm and foundthat the coercivity depends on the net magnetic moment, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1.1, 'nm', 1],[5.0, 1.1, 'nm', 0],[80.0, 300, 'degree', 2],[92.0, 350, 'degree', 2],[157.0, 50, '%', 3]

CoFeB
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(111573, 111575)
 the thicknessdifference of the two CoFeB layers.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1.1, 'nm', 2],[44.0, 1.1, 'nm', 1],[29.0, 300, 'degree', 1],[41.0, 350, 'degree', 1],[106.0, 50, '%', 2]

C
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(111606, 111606)
 The antiferromagnetic coupling is almostindependent on the annealing temperatures up to 300 degree C while an annealingat 350 degree C reduces the coupling and increases the coercivity, indicatingthe onset of crystallization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1.1, 'nm', 3],[77.0, 1.1, 'nm', 2],[2.0, 300, 'degree', 0],[10.0, 350, 'degree', 0],[75.0, 50, '%', 1]

C
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(111618, 111618)
 The antiferromagnetic coupling is almostindependent on the annealing temperatures up to 300 degree C while an annealingat 350 degree C reduces the coupling and increases the coercivity, indicatingthe onset of crystallization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1.1, 'nm', 3],[89.0, 1.1, 'nm', 2],[14.0, 300, 'degree', 0],[2.0, 350, 'degree', 0],[63.0, 50, '%', 1]

Fe
###Spin Tunneling in Conducting Oxides|Alexander Bratkovsky###
(111920, 111920)
 Wefind that tunneling via resonant defect states in the barrier radicallydecreases the TMR (down to 4% with Fe-based electrodes), and a resonant tunneldiode structure would give a TMR of about 8%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 30, '%', 2],[5.0, 4, '%', 0],[35.0, 8, '%', 0],[176.0, 100, '%', 3],[265.0, 1000, 'percent', 4]

CrO2/TiO2
###Spin Tunneling in Conducting Oxides|Alexander Bratkovsky###
(112201, 112207)
 Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2, and an account of their peculiar bandstructures is presented.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[397.0, 30, '%', 7],[286.0, 4, '%', 5],[246.0, 8, '%', 5],[105.0, 100, '%', 2],[16.0, 1000, 'percent', 1]

CrO2/RuO2
###Spin Tunneling in Conducting Oxides|Alexander Bratkovsky###
(112211, 112217)
 Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2, and an account of their peculiar bandstructures is presented.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[407.0, 30, '%', 7],[296.0, 4, '%', 5],[256.0, 8, '%', 5],[115.0, 100, '%', 2],[26.0, 1000, 'percent', 1]

C
###Spin Tunneling in Conducting Oxides|Alexander Bratkovsky###
(112258, 112258)
 The implications and relation of these systems to CMRmaterials which are nearly half-metallic, are discussed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[454.0, 30, '%', 8],[343.0, 4, '%', 6],[303.0, 8, '%', 6],[162.0, 100, '%', 3],[73.0, 1000, 'percent', 2]

CrCl3
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(112293, 112295)
Atomically Thin CrCl3 An in-Plane Layered Antiferromagnetic Insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2, 'D', 2],[238.0, 870, 'nm', 4],[391.0, 2, 'D', 7]

W
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(112339, 112339)
 The recent discovery of magnetism in atomically thin layers of van der Waals(vdW) crystals has created new opportunities for exploring magnetic phenomenain the two-dimensional (2D) limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'D', 1],[194.0, 870, 'nm', 3],[347.0, 2, 'D', 6]

In
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(112377, 112377)
 In most 2D magnets studied to date thec<missing VAR>-axis is an easy axis, so that at zero applied field the polarization of eachlayer is perpendicular to the plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, 'D', 0],[156.0, 870, 'nm', 2],[309.0, 2, 'D', 5]

CrCl3
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(112454, 112456)
 Here, we demonstrate that atomically thinCrCl3 is a layered antiferromagnetic insulator with an easy-plane normal to thec<missing VAR>-axis, that is the polarization is in the plane of each layer and has nopreferred direction within it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'D', 1],[77.0, 870, 'nm', 1],[230.0, 2, 'D', 4]

CrCl3
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(112586, 112588)
We investigate the in-plane magnetic order using tunneling magnetoresistance ingraphene/CrCl3/graphene tunnel junctions, establishing that the interlayercoupling is antiferromagnetic down to the bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 2, 'D', 3],[53.0, 870, 'nm', 1],[98.0, 2, 'D', 2]

CrCl3
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(112666, 112668)
 Our result shows that CrCl3 should be useful forstudying the physics of 2D phase transitions and for making new kinds of vdWspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 2, 'D', 5],[133.0, 870, 'nm', 3],[18.0, 2, 'D', 0]

W
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(112705, 112705)
 Our result shows that CrCl3 should be useful forstudying the physics of 2D phase transitions and for making new kinds of vdWspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 2, 'D', 5],[172.0, 870, 'nm', 3],[19.0, 2, 'D', 0]

W
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(112968, 112968)
 Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layershas been found to present excellent tunneling magnetoresistance (TMR) property,which has great potential applications in field sensing, non-volatile magneticrandom access memories, and spin logics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'D', 1],[263.0, 300, '%', 4],[288.0, 620, ',', 4],[290.0, 0, '%', 4]

W
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(113054, 113054)
 Although MTJs composed of multilayervdW magnetic homojunction have been extensively investigated, the ones composedof vdW magnetic heterojunction is still to be explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'D', 2],[177.0, 300, '%', 3],[202.0, 620, ',', 3],[204.0, 0, '%', 3]

W
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(113079, 113079)
 Although MTJs composed of multilayervdW magnetic homojunction have been extensively investigated, the ones composedof vdW magnetic heterojunction is still to be explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, 'D', 2],[152.0, 300, '%', 3],[177.0, 620, ',', 3],[179.0, 0, '%', 3]

In
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(113149, 113149)
 In theMTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find thereare eight stable magnetic states, leading to six distinguishable electronicresistances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 2, 'D', 4],[82.0, 300, '%', 1],[107.0, 620, ',', 1],[109.0, 0, '%', 1]

CrI3
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(113164, 113166)
 In theMTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find thereare eight stable magnetic states, leading to six distinguishable electronicresistances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 2, 'D', 4],[65.0, 300, '%', 1],[90.0, 620, ',', 1],[92.0, 0, '%', 1]

Cr2Ge2Te6
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(113170, 113175)
 In theMTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find thereare eight stable magnetic states, leading to six distinguishable electronicresistances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, 'D', 4],[56.0, 300, '%', 1],[81.0, 620, ',', 1],[83.0, 0, '%', 1]

As
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(113212, 113212)
 As a result, five sizable TMRs larger than 300% can be obtained(the maximum TMR is up to 620,000%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 2, 'D', 5],[19.0, 300, '%', 0],[44.0, 620, ',', 0],[46.0, 0, '%', 0]

W
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(113431, 113431)
 This study opens an avenue to thedesign of high-performance MTJ devices based on vdW heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[500.0, 2, 'D', 9],[200.0, 300, '%', 4],[175.0, 620, ',', 4],[173.0, 0, '%', 4]

Mn2VGa
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(113452, 113455)
Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2VGa
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(113474, 113477)
 The ferrimagnetic Heusler compound Mn2VGa is predicted to have a pseudogap inthe majority spin channel, which should lead to a negative tunnelmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2VGa
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(113527, 113530)
 We synthesized epitaxial Mn2VGa thin films on MgO(001)substrates by dc and rf magnetron co-sputtering, resulting in nearlystoichiometric films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(113586, 113587)
 XRD analysis revealed a mostly B2-ordered structure forthe films deposited at substrate temperatures of 350degC, 450degC, and550degC.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(113612, 113612)
 XRD analysis revealed a mostly B2-ordered structure forthe films deposited at substrate temperatures of 350degC, 450degC, and550degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(113617, 113617)
 XRD analysis revealed a mostly B2-ordered structure forthe films deposited at substrate temperatures of 350degC, 450degC, and550degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(113625, 113625)
 XRD analysis revealed a mostly B2-ordered structure forthe films deposited at substrate temperatures of 350degC, 450degC, and550degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(113636, 113637)
 Magnetic tunnel junctions with MgO barrier and CoFecounter-electrodes were fabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(113643, 113644)
 Magnetic tunnel junctions with MgO barrier and CoFecounter-electrodes were fabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(113673, 113673)
 After post-annealing at up toT<missing VAR>a425degC negative TMR was obtained around zero bias, providing evidencefor the inverted spin-polarization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(V)
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(113747, 113749)
 Band structures of both electrodes werecomputed within the coherent potential approximation and used to calculate theTMR(V) characteristics, which are in good agreement with our experimentalfindings.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Immunity of nanoscale magnetic tunnel junctions to ionizing radiation|Eric Arturo Montoya,Jen-Ru Chen,Randy Ngelale,Han Kyu Lee,Hsin-Wei Tseng,Lei Wan,En Yang,Patrick Braganca,Ozdal Boyraz,Nader Bagherzadeh,Mikael Nilsson,Ilya N. Krivorotov###
(113816, 113816)
 Spin transfer torque magnetic random access memory (STT-MRAM) is a promisingcandidate for next generation memory as it is non-volatile, fast, and hasunlimited endurance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Immunity of nanoscale magnetic tunnel junctions to ionizing radiation|Eric Arturo Montoya,Jen-Ru Chen,Randy Ngelale,Han Kyu Lee,Hsin-Wei Tseng,Lei Wan,En Yang,Patrick Braganca,Ozdal Boyraz,Nader Bagherzadeh,Mikael Nilsson,Ilya N. Krivorotov###
(113875, 113875)
 Another important aspect of STT-MRAM<missing VAR> is that its corecomponent, the nanoscale magnetic tunneling junction (MTJ), is thought to beradiation hard, making it attractive for space and nuclear technologyapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Immunity of nanoscale magnetic tunnel junctions to ionizing radiation|Eric Arturo Montoya,Jen-Ru Chen,Randy Ngelale,Han Kyu Lee,Hsin-Wei Tseng,Lei Wan,En Yang,Patrick Braganca,Ozdal Boyraz,Nader Bagherzadeh,Mikael Nilsson,Ilya N. Krivorotov###
(113973, 113973)
 However, studies of the effects of high doses of ionizingradiation on STT-MRAM<missing VAR> writing process are lacking.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Immunity of nanoscale magnetic tunnel junctions to ionizing radiation|Eric Arturo Montoya,Jen-Ru Chen,Randy Ngelale,Han Kyu Lee,Hsin-Wei Tseng,Lei Wan,En Yang,Patrick Braganca,Ozdal Boyraz,Nader Bagherzadeh,Mikael Nilsson,Ilya N. Krivorotov###
(114043, 114043)
 Here we report measurementsof the impact of high doses of gamma and neutron radiation on nanoscale MTJswith perpendicular magnetic anistropy used in STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Immunity of nanoscale magnetic tunnel junctions to ionizing radiation|Eric Arturo Montoya,Jen-Ru Chen,Randy Ngelale,Han Kyu Lee,Hsin-Wei Tseng,Lei Wan,En Yang,Patrick Braganca,Ozdal Boyraz,Nader Bagherzadeh,Mikael Nilsson,Ilya N. Krivorotov###
(114123, 114123)
 Our results demonstratethat all these key properties of nanoscale MTJs relevant to STT-MRAM<missing VAR>applications are robust against ionizing radiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications|Lishu Zhang,Jun Zhou,Hui Li,Lei Shen,Yuan Ping Feng###
(114252, 114252)
 As Moores<missing VAR> law is gradually losing its effectiveness, developing alternativehigh-speed and low-energy-consuming information technology with post-siliconadvanced materials is urgently needed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2, 'D', 1],[175.0, 2, 'D', 2],[205.0, 2, 'D', 3],[249.0, 2, 'D', 4],[266.0, 2, 'D', 4],[287.0, 2, 'D', 5],[348.0, 2, 'D', 5],[422.0, 2, 'D', 6],[442.0, 2, 'D', 6],[487.0, 2, 'D', 6]

BN
###Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications|Lishu Zhang,Jun Zhou,Hui Li,Lei Shen,Yuan Ping Feng###
(114559, 114560)
Various 2D materials, such as semi-metallic graphene, insulating h<missing VAR>-BN,semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2and some other recently emerged 2D materials are discussed as the electrodesand/or central scattering materials of MTJs in this review.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 2, 'D', 6],[132.0, 2, 'D', 3],[102.0, 2, 'D', 2],[58.0, 2, 'D', 1],[41.0, 2, 'D', 1],[20.0, 2, 'D', 0],[40.0, 2, 'D', 0],[114.0, 2, 'D', 1],[134.0, 2, 'D', 1],[179.0, 2, 'D', 1]

MoS2
###Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications|Lishu Zhang,Jun Zhou,Hui Li,Lei Shen,Yuan Ping Feng###
(114566, 114568)
Various 2D materials, such as semi-metallic graphene, insulating h<missing VAR>-BN,semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2and some other recently emerged 2D materials are discussed as the electrodesand/or central scattering materials of MTJs in this review.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 2, 'D', 6],[139.0, 2, 'D', 3],[109.0, 2, 'D', 2],[65.0, 2, 'D', 1],[48.0, 2, 'D', 1],[27.0, 2, 'D', 0],[32.0, 2, 'D', 0],[106.0, 2, 'D', 1],[126.0, 2, 'D', 1],[171.0, 2, 'D', 1]

CrI3
###Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications|Lishu Zhang,Jun Zhou,Hui Li,Lei Shen,Yuan Ping Feng###
(114575, 114577)
Various 2D materials, such as semi-metallic graphene, insulating h<missing VAR>-BN,semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2and some other recently emerged 2D materials are discussed as the electrodesand/or central scattering materials of MTJs in this review.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 2, 'D', 6],[148.0, 2, 'D', 3],[118.0, 2, 'D', 2],[74.0, 2, 'D', 1],[57.0, 2, 'D', 1],[36.0, 2, 'D', 0],[23.0, 2, 'D', 0],[97.0, 2, 'D', 1],[117.0, 2, 'D', 1],[162.0, 2, 'D', 1]

Fe3GeTe2
###Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications|Lishu Zhang,Jun Zhou,Hui Li,Lei Shen,Yuan Ping Feng###
(114584, 114588)
Various 2D materials, such as semi-metallic graphene, insulating h<missing VAR>-BN,semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2and some other recently emerged 2D materials are discussed as the electrodesand/or central scattering materials of MTJs in this review.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 2, 'D', 6],[157.0, 2, 'D', 3],[127.0, 2, 'D', 2],[83.0, 2, 'D', 1],[66.0, 2, 'D', 1],[45.0, 2, 'D', 0],[12.0, 2, 'D', 0],[86.0, 2, 'D', 1],[106.0, 2, 'D', 1],[151.0, 2, 'D', 1]

SO
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(114798, 114799)
 Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Halleffect creates new possibilities for ultrafast and low-power magnetoresistiverandom access memory (MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 50, 'nm', 5],[345.0, 500, 'nm', 5]

SO
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(114886, 114887)
 For perpendicular MRAM<missing VAR>, an extra in-plane field isrequired to break the symmetry for the deterministic SOT<missing VAR> writing of theperpendicular storage layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 50, 'nm', 4],[257.0, 500, 'nm', 4]

SO
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(114923, 114924)
 Although schemes have been demonstrated inexternal-field-free SOT<missing VAR> switching of a perpendicular layer, practicallyintegrating them with perpendicular MTJs still appears to be challenging.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 50, 'nm', 3],[220.0, 500, 'nm', 3]

SO
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(114985, 114986)
 Here,we present experimental demonstration of spin-orbit torques (SOTs) switching aperpendicular magnetic tunnel junction (MTJ) device without applying anexternal magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 50, 'nm', 2],[158.0, 500, 'nm', 2]

Ir
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(115027, 115027)
 An Ir layer is used to serve dual-purpose of bothinjecting the pure spin current via spin Hall effect and mediating an in-planeexchange field to the perpendicular free layer of the MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 50, 'nm', 1],[117.0, 500, 'nm', 1]

SO
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(115107, 115108)
 Robust field-freeSOT<missing VAR> switching with pulsed write path current is demonstrated for various MTJsizes ranging from 50 nm to 500 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 50, 'nm', 0],[36.0, 500, 'nm', 0]

Co2MnSi/MgO/Co2MnSi
###Spincaloric properties of epitaxial Co$_2$MnSi/MgO/Co$_2$MnSi magnetic tunnel junctions|Benjamin Geisler,Peter Kratzer###
(115248, 115259)
Spincaloric properties of epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co2MnSi
###Spincaloric properties of epitaxial Co$_2$MnSi/MgO/Co$_2$MnSi magnetic tunnel junctions|Benjamin Geisler,Peter Kratzer###
(115297, 115300)
 The electronic transport and spincaloric properties of epitaxial magnetictunnel junctions with half-metallic Co2MnSi Heusler electrodes, MgOtunneling barriers, and different interface terminations are investigated byusing first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spincaloric properties of epitaxial Co$_2$MnSi/MgO/Co$_2$MnSi magnetic tunnel junctions|Benjamin Geisler,Peter Kratzer###
(115307, 115308)
 The electronic transport and spincaloric properties of epitaxial magnetictunnel junctions with half-metallic Co2MnSi Heusler electrodes, MgOtunneling barriers, and different interface terminations are investigated byusing first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V/K
###Spincaloric properties of epitaxial Co$_2$MnSi/MgO/Co$_2$MnSi magnetic tunnel junctions|Benjamin Geisler,Peter Kratzer###
(115593, 115595)
 We find a large effective andspin-dependent Seebeck coefficient of -65 muV/K at room temperature forthe purely Co-terminated interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Spincaloric properties of epitaxial Co$_2$MnSi/MgO/Co$_2$MnSi magnetic tunnel junctions|Benjamin Geisler,Peter Kratzer###
(115610, 115610)
 We find a large effective andspin-dependent Seebeck coefficient of -65 muV/K at room temperature forthe purely Co-terminated interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe2O4
###Spinel ferrites: old materials bring new opportunities for spintronics|Ulrike Lueders,Agnes Barthelemy,Manuel Bibes,Karim Bouzehouane,Stephane Fusil,Eric Jacquet,Jean-Pierre Contour,Jean-Francois Bobo,Josep Fontcuberta,Albert Fert###
(116043, 116047)
 Here we show that the epitaxial growth of nanometricNiFe2O4 films onto perovskite substrates allows the stabilization of novelferrite phases with properties dramatically differing from bulk ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe2O4
###Spinel ferrites: old materials bring new opportunities for spintronics|Ulrike Lueders,Agnes Barthelemy,Manuel Bibes,Karim Bouzehouane,Stephane Fusil,Eric Jacquet,Jean-Pierre Contour,Jean-Francois Bobo,Josep Fontcuberta,Albert Fert###
(116091, 116095)
 Indeed,NiFe2O4 films few nanometres thick have a saturation magnetization at leasttwice that of the bulk compound and their resistivity can be tuned by orders ofmagnitude, depending on the growth conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe2O4
###Spinel ferrites: old materials bring new opportunities for spintronics|Ulrike Lueders,Agnes Barthelemy,Manuel Bibes,Karim Bouzehouane,Stephane Fusil,Eric Jacquet,Jean-Pierre Contour,Jean-Francois Bobo,Josep Fontcuberta,Albert Fert###
(116171, 116175)
 By integrating such thin NiFe2O4layers into spin-dependent tunnelling heterostructures, we demonstrate thatthis versatile material can be useful for spintronics, either as a conductiveelectrode in magnetic tunnel junctions or as a spin-filtering insulatingbarrier in the little explored type of tunnel junction called spin-filter.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers|X. G. Xu,D. L. Zhang,X. Q. Li,J. Bao,Y. Jiang###
(116355, 116358)
Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.45, 'nm', 2],[93.0, 150, 'oC', 2],[124.0, 425, 'emu', 3],[141.0, 4.3, 'Oe', 3],[156.0, 5257, 'Oe', 3]

Co2FeAl
###Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers|X. G. Xu,D. L. Zhang,X. Q. Li,J. Bao,Y. Jiang###
(116369, 116372)
 Heusler alloy Co2FeAl was employed as ferromagnetic layers inCo2FeAl/Ru/Co2FeAl synthetic antiferromagnet structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.45, 'nm', 1],[79.0, 150, 'oC', 1],[110.0, 425, 'emu', 2],[127.0, 4.3, 'Oe', 2],[142.0, 5257, 'Oe', 2]

Co2FeAl/Ru/Co2FeAl
###Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers|X. G. Xu,D. L. Zhang,X. Q. Li,J. Bao,Y. Jiang###
(116387, 116397)
 Heusler alloy Co2FeAl was employed as ferromagnetic layers inCo2FeAl/Ru/Co2FeAl synthetic antiferromagnet structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[33.0, 0.45, 'nm', 1],[54.0, 150, 'oC', 1],[85.0, 425, 'emu', 2],[102.0, 4.3, 'Oe', 2],[117.0, 5257, 'Oe', 2]

Ru
###Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers|X. G. Xu,D. L. Zhang,X. Q. Li,J. Bao,Y. Jiang###
(116425, 116425)
 The experimentalresults show that the structure with a Ru thickness of 0.45 nm takes onstrongly antiferromagnetic coupling, which maintains up to 150 oC annealing for1 hour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.45, 'nm', 0],[26.0, 150, 'oC', 0],[57.0, 425, 'emu', 1],[74.0, 4.3, 'Oe', 1],[89.0, 5257, 'Oe', 1]

Hs
###Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers|X. G. Xu,D. L. Zhang,X. Q. Li,J. Bao,Y. Jiang###
(116511, 116511)
 The structure has a very low saturation magnetization Ms of 425 emu/cc,a low switching field Hsw of 4.3 Oe and a high saturation field Hs of 5257 Oeat room temperature, which are favorable for application in ultrahigh densitymagnetic read heads or other magnetic memory devices.
EXCEPTION 3: IndexError for Hs
Co2FeAl
[81.0, 0.45, 'nm', 1],[60.0, 150, 'oC', 1],[29.0, 425, 'emu', 0],[12.0, 4.3, 'Oe', 0],[3.0, 5257, 'Oe', 0]

I
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(116812, 116812)
 We find that, Majoranamode energy, as a verified feature of T<missing VAR>I F/S structure, along the interfacesensitively depends on the magnitude of magnetization m<missing VAR>zfs in FS region,while its slope in perpendicular incidence presents steep and no change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/S
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(116814, 116816)
 We find that, Majoranamode energy, as a verified feature of T<missing VAR>I F/S structure, along the interfacesensitively depends on the magnitude of magnetization m<missing VAR>zfs in FS region,while its slope in perpendicular incidence presents steep and no change.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FS
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(116847, 116848)
 We find that, Majoranamode energy, as a verified feature of T<missing VAR>I F/S structure, along the interfacesensitively depends on the magnitude of magnetization m<missing VAR>zfs in FS region,while its slope in perpendicular incidence presents steep and no change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(116957, 116958)
 Sincethe superconducting gap is renormalized by a factor eta(m<missing VAR>zfs), henceAndreev reflection is more or less suppressed, and, in particular, resultingsubgap tunneling conductance is more sensitive to the magnitude ofmagnetizations in FS and F regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(116962, 116962)
 Sincethe superconducting gap is renormalized by a factor eta(m<missing VAR>zfs), henceAndreev reflection is more or less suppressed, and, in particular, resultingsubgap tunneling conductance is more sensitive to the magnitude ofmagnetizations in FS and F regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N/F/FS
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(117008, 117013)
 Furthermore, an interesting scenariohappens at the antiparallel configuration of magnetizations m<missing VAR>zf andm<missing VAR>zfs resulting in magnetoresistance in N/F/FS junction, which can becontrolled and decreased by tuning the magnetization magnitude in FS region.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FS
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(117043, 117044)
 Furthermore, an interesting scenariohappens at the antiparallel configuration of magnetizations m<missing VAR>zf andm<missing VAR>zfs resulting in magnetoresistance in N/F/FS junction, which can becontrolled and decreased by tuning the magnetization magnitude in FS region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye###
(117065, 117070)
A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[100.0, 9, 'K', 1],[118.0, 120, '%', 2],[144.0, 2, 'to', 2],[145.0, 200, 'ns', 2],[164.0, 9, 'K', 3],[171.0, 300, 'K', 3],[210.0, 10, 'ns', 3],[226.0, 9, 'K', 4],[239.0, 33, '%', 4],[244.0, 93, '%', 4],[265.0, 350, 'K', 4]

CoFeB/MgO
###A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye###
(117109, 117114)
 We investigated the low temperature performance of CoFeB/MgO basedperpendicular magnetic tunnel junctions (pMTJs) by characterizing theirquasi-static switching voltage, high speed pulse write error rate and endurancedown to 9 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[56.0, 9, 'K', 0],[74.0, 120, '%', 1],[100.0, 2, 'to', 1],[101.0, 200, 'ns', 1],[120.0, 9, 'K', 2],[127.0, 300, 'K', 2],[166.0, 10, 'ns', 2],[182.0, 9, 'K', 3],[195.0, 33, '%', 3],[200.0, 93, '%', 3],[221.0, 350, 'K', 3]

CoFeB/MgO
###A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye###
(117419, 117424)
 Our work demonstrates that CoFeB/MgObased pMTJs have great potential to enable cryogenic MRAM<missing VAR> and that their lowtemperature magnetization and effective magnetic anisotropy can be furtheroptimized to lower operating power and improve endurance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[249.0, 9, 'K', 5],[231.0, 120, '%', 4],[205.0, 2, 'to', 4],[204.0, 200, 'ns', 4],[185.0, 9, 'K', 3],[178.0, 300, 'K', 3],[139.0, 10, 'ns', 3],[123.0, 9, 'K', 2],[110.0, 33, '%', 2],[105.0, 93, '%', 2],[84.0, 350, 'K', 2]

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117534, 117535)
 Spin-orbit torques (SOT) provide a versatile tool to manipulate themagnetization of diverse classes of materials and devices using electriccurrents, leading to novel spintronic memory and computing approaches.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117595, 117595)
 Inparallel to spin transfer torques (STT), which have emerged as a leadingnon-volatile memory technologie, SOT<missing VAR> broaden the scope of current-inducedmagnetic switching to applications that run close to the clock speed of thecentral processing unit and unconventional computing architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117609, 117609)
 Inparallel to spin transfer torques (STT), which have emerged as a leadingnon-volatile memory technologie, SOT<missing VAR> broaden the scope of current-inducedmagnetic switching to applications that run close to the clock speed of thecentral processing unit and unconventional computing architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117637, 117638)
 Inparallel to spin transfer torques (STT), which have emerged as a leadingnon-volatile memory technologie, SOT<missing VAR> broaden the scope of current-inducedmagnetic switching to applications that run close to the clock speed of thecentral processing unit and unconventional computing architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117696, 117696)
 In thispaper, we review the fundamental characteristics of SOT<missing VAR> and their use to switchmagnetic tunnel junction (MTJ) devices, the elementary unit of themagnetoresistive random access memory (MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117716, 117717)
 In thispaper, we review the fundamental characteristics of SOT<missing VAR> and their use to switchmagnetic tunnel junction (MTJ) devices, the elementary unit of themagnetoresistive random access memory (MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117773, 117773)
 In the first part, we illustratethe physical mechanisms that drive the SOT<missing VAR> and magnetization reversal innanoscale structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117799, 117800)
 In the first part, we illustratethe physical mechanisms that drive the SOT<missing VAR> and magnetization reversal innanoscale structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117817, 117817)
 In the second part, we focus on the SOT-MTJ cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117834, 117835)
 In the second part, we focus on the SOT-MTJ cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117890, 117891)
 Wediscuss the anatomy of the MTJ in terms of materials and stack development,summarize the figures of merit for SOT<missing VAR> switching, review the field-freeoperation of perpendicularly magnetized MTJs, and present options to combineSOT<missing VAR>, STT and voltage-gate assisted switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117930, 117931)
 Wediscuss the anatomy of the MTJ in terms of materials and stack development,summarize the figures of merit for SOT<missing VAR> switching, review the field-freeoperation of perpendicularly magnetized MTJs, and present options to combineSOT<missing VAR>, STT and voltage-gate assisted switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117935, 117935)
 Wediscuss the anatomy of the MTJ in terms of materials and stack development,summarize the figures of merit for SOT<missing VAR> switching, review the field-freeoperation of perpendicularly magnetized MTJs, and present options to combineSOT<missing VAR>, STT and voltage-gate assisted switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117950, 117950)
 In the third part, we considerSOT-MRAMs in the perspective of circuit integration processes, introducingconsiderations on scaling and performance, as well as macro-designarchitectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(117964, 117965)
 In the third part, we considerSOT-MRAMs in the perspective of circuit integration processes, introducingconsiderations on scaling and performance, as well as macro-designarchitectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(118030, 118031)
 We thus bridge the fundamental description of SOT<missing VAR>-drivenmagnetization dynamics with an application-oriented perspective, includingdevice and system-level considerations, goals, and challenges.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(118158, 118158)
 Using the tight-binding approximation and the nonequilibrium Greens<missing VAR> functionapproach, we investigate the coherent spin-dependent transport in planarmagnetic junctions consisting of two ferromagnetic (FM) electrodes separated bya graphene flake (G<missing VAR>F) with zigzag or armchair interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(118177, 118177)
 Using the tight-binding approximation and the nonequilibrium Greens<missing VAR> functionapproach, we investigate the coherent spin-dependent transport in planarmagnetic junctions consisting of two ferromagnetic (FM) electrodes separated bya graphene flake (G<missing VAR>F) with zigzag or armchair interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(118225, 118225)
 It is found that theelectron conduction strongly depends on the geometry of contact between the G<missing VAR>Fand the FM<missing VAR> electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(118232, 118232)
 It is found that theelectron conduction strongly depends on the geometry of contact between the G<missing VAR>Fand the FM<missing VAR> electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(118238, 118238)
 In the case of zigzag interfaces, the junctiondemonstrates a spin-valve effect with high magnetoresistance (MR) ratios andshows negative differential resistance features for a single spin channel atpositive gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(118312, 118312)
 In the case of armchair interfaces, the current-voltagecharacteristics behave linearly at low bias voltages and hence, both spinchannels are in on state with low MR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###New memory devices based on the proton transfer process|Malgorzata Wierzbowska###
(118422, 118422)
 Memory devices operating due to the fast proton transfer (PT) process areproposed by means of the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###New memory devices based on the proton transfer process|Malgorzata Wierzbowska###
(118479, 118479)
 Writing an informationis performed using the electrostatic potential of the scanning tunnelingmicroscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###New memory devices based on the proton transfer process|Malgorzata Wierzbowska###
(118526, 118526)
 Reading an information is based on the effect of the localmagnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge -saturated with oxygen or the hydroxy group - and can be realized with the useof the giant magnetoresistance (GMR), magnetic tunnel junction (MTJ) orspin-transfer torque (STT) devices.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###New memory devices based on the proton transfer process|Malgorzata Wierzbowska###
(118603, 118603)
 Reading an information is based on the effect of the localmagnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge -saturated with oxygen or the hydroxy group - and can be realized with the useof the giant magnetoresistance (GMR), magnetic tunnel junction (MTJ) orspin-transfer torque (STT) devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###New memory devices based on the proton transfer process|Malgorzata Wierzbowska###
(118653, 118653)
 The energetic barriers for the hop-forwardand -backward processes can be tuned by the distance and potential of the STMtip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(118758, 118759)
Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 110, 'K', 3]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(118762, 118764)
Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 110, 'K', 3]

W
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(118777, 118777)
 Ferromagnetic van der Waals (vdW) materials are in demand for spintronicdevices with all-two-dimensional-materials heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 110, 'K', 2]

Cr1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(118835, 118836)
 Here, wedemonstrate mechanical exfoliation of magnetic-atom-intercalated transitionmetal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously suchintercalated materials were thought difficult to exfoliate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 110, 'K', 1]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(118839, 118841)
 Here, wedemonstrate mechanical exfoliation of magnetic-atom-intercalated transitionmetal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously suchintercalated materials were thought difficult to exfoliate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 110, 'K', 1]

C
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(118905, 118905)
 Magnetotransport inexfoliated tens-of-nanometres-thick flakes revealed ferromagnetic orderingbelow its Curie temperature T<missing VAR>C  110 K as well as strong in-plane magneticanisotropy; these are identical to its bulk properties.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 110, 'K', 0]

Cr1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(118958, 118959)
 Further, van der Waalsheterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnetFe1/4TaS2 is demonstrated using a dry-transfer method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 110, 'K', 1]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(118962, 118964)
 Further, van der Waalsheterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnetFe1/4TaS2 is demonstrated using a dry-transfer method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 110, 'K', 1]

Fe1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(118975, 118976)
 Further, van der Waalsheterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnetFe1/4TaS2 is demonstrated using a dry-transfer method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 110, 'K', 1]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(118979, 118981)
 Further, van der Waalsheterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnetFe1/4TaS2 is demonstrated using a dry-transfer method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 110, 'K', 1]

Cr1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(119009, 119010)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 110, 'K', 2]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(119013, 119015)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 110, 'K', 2]

Fe1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(119019, 119020)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 110, 'K', 2]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(119023, 119025)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 110, 'K', 2]

Ta2O5
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(119033, 119036)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 110, 'K', 2]

W
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(119091, 119091)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 110, 'K', 2]

In
###Circuit-Level Evaluation of the Generation of Truly Random Bits with Superparamagnetic Tunnel Junctions|Damir Vodenicarevic,Nicolas Locatelli,Alice Mizrahi,Tifenn Hirtzlin,Joseph S. Friedman,Julie Grollier,Damien Querlioz###
(119310, 119310)
 In this work, we evaluate a circuit solution for reading the stateof superparamagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Circuit-Level Evaluation of the Generation of Truly Random Bits with Superparamagnetic Tunnel Junctions|Damir Vodenicarevic,Nicolas Locatelli,Alice Mizrahi,Tifenn Hirtzlin,Joseph S. Friedman,Julie Grollier,Damien Querlioz###
(119473, 119473)
 These results suggest thatsuperparamagnetic tunnel junctions could generate truly random bits at 20fJ/bit, including overheads, orders of magnitudes below CM<missing VAR>OS-based solutions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Circuit-Level Evaluation of the Generation of Truly Random Bits with Superparamagnetic Tunnel Junctions|Damir Vodenicarevic,Nicolas Locatelli,Alice Mizrahi,Tifenn Hirtzlin,Joseph S. Friedman,Julie Grollier,Damien Querlioz###
(119475, 119476)
 These results suggest thatsuperparamagnetic tunnel junctions could generate truly random bits at 20fJ/bit, including overheads, orders of magnitudes below CM<missing VAR>OS-based solutions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Spin transistor built on 2D van der Waals heterostructures|Shengwei Jiang,Lizhong Li,Zefang Wang,Jie Shan,Kin Fai Mak###
(119718, 119720)
 Spin transistors (whose on-off operation is achieved byelectric-field-controlled spin orientation 1), if realized, can revolutionizemodern electronics through the implementation of a faster and a moreenergy-efficient performance as well as non-volatile data storage 2, 3. Theoriginal proposal by Datta and Das 1 that relies on electric-field-controlledspin precession in a semiconductor channel faces significant challengesincluding inefficient spin injection, spin relaxation and spread of the spinprecession angle 4, 5. Recent demonstration of electric-field switching ofmagnetic order 6-8 and spin filtering 9-12 in two-dimensional magneticinsulator CrI3 has inspired a new operational principle for spin transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 2, 'D', 1],[122.0, 2, ',', 0],[120.0, 3.0, 'The', 0],[106.0, 1, 'that', 0],[46.0, 4, ',', 0],[44.0, 5.0, 'Recent', 0]

CrI3
###Spin transistor built on 2D van der Waals heterostructures|Shengwei Jiang,Lizhong Li,Zefang Wang,Jie Shan,Kin Fai Mak###
(119767, 119769)
Here we demonstrate spin field-effect transistors based on dual-gatedgraphene/CrI3 tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 2, 'D', 2],[171.0, 2, ',', 1],[169.0, 3.0, 'The', 1],[155.0, 1, 'that', 1],[95.0, 4, ',', 1],[93.0, 5.0, 'Recent', 1]

CrI3
###Spin transistor built on 2D van der Waals heterostructures|Shengwei Jiang,Lizhong Li,Zefang Wang,Jie Shan,Kin Fai Mak###
(119809, 119811)
 These devices show an ambipolar transistorbehavior and tunnel magnetoresistance widely tunable by gating when the CrI3magnetic tunnel barrier undergoes an antiferromagnetic-ferromagnetic spin-fliptransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 2, 'D', 3],[213.0, 2, ',', 2],[211.0, 3.0, 'The', 2],[197.0, 1, 'that', 2],[137.0, 4, ',', 2],[135.0, 5.0, 'Recent', 2]

In
###Seebeck Effect in Magnetic Tunnel Junctions|Marvin Walter,Jakob Walowski,Vladyslav Zbarsky,Markus Münzenberg,Markus Schäfers,Daniel Ebke,Günter Reiss,Andy Thomas,Patrick Peretzki,Michael Seibt,Jagadeesh S. Moodera,Michael Czerner,Michael Bachmann,Christian Heiliger###
(120116, 120116)
 In particular, the Seebeckcoefficient changes during the transition from a parallel to an antiparallelmagnetic configuration in a tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Seebeck Effect in Magnetic Tunnel Junctions|Marvin Walter,Jakob Walowski,Vladyslav Zbarsky,Markus Münzenberg,Markus Schäfers,Daniel Ebke,Günter Reiss,Andy Thomas,Patrick Peretzki,Michael Seibt,Jagadeesh S. Moodera,Michael Czerner,Michael Bachmann,Christian Heiliger###
(120162, 120162)
 In that respect, it is the analogto the tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V/K
###Seebeck Effect in Magnetic Tunnel Junctions|Marvin Walter,Jakob Walowski,Vladyslav Zbarsky,Markus Münzenberg,Markus Schäfers,Daniel Ebke,Günter Reiss,Andy Thomas,Patrick Peretzki,Michael Seibt,Jagadeesh S. Moodera,Michael Czerner,Michael Bachmann,Christian Heiliger###
(120324, 120326)
 Experimentally, we realized 8.8 % magneto-Seebeck effect, whichresults from a voltage change of about -8.7 muV/K from the antiparallel tothe parallel direction close to the predicted value of -12.1 muV/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

V/K
###Seebeck Effect in Magnetic Tunnel Junctions|Marvin Walter,Jakob Walowski,Vladyslav Zbarsky,Markus Münzenberg,Markus Schäfers,Daniel Ebke,Günter Reiss,Andy Thomas,Patrick Peretzki,Michael Seibt,Jagadeesh S. Moodera,Michael Czerner,Michael Bachmann,Christian Heiliger###
(120359, 120361)
 Experimentally, we realized 8.8 % magneto-Seebeck effect, whichresults from a voltage change of about -8.7 muV/K from the antiparallel tothe parallel direction close to the predicted value of -12.1 muV/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication|Ewa Kowalska,Akio Fukushima,Volker Sluka,Ciarán Fowley,Attila Kákay,Yuriy Aleksandrov,Jürgen Lindner,Jürgen Fassbender,Shinji Yuasa,Alina M. Deac###
(120400, 120400)
 Spin-transfer torques (ST<missing VAR>Ts) can be exploited in order to manipulate themagnetic moments of nanomagnets, thus allowing for new consumer-orienteddevices to be designed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication|Ewa Kowalska,Akio Fukushima,Volker Sluka,Ciarán Fowley,Attila Kákay,Yuriy Aleksandrov,Jürgen Lindner,Jürgen Fassbender,Shinji Yuasa,Alina M. Deac###
(120472, 120472)
 Of particular interest here are tuneableradio-frequency (R<missing VAR>F) oscillators for wireless communication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication|Ewa Kowalska,Akio Fukushima,Volker Sluka,Ciarán Fowley,Attila Kákay,Yuriy Aleksandrov,Jürgen Lindner,Jürgen Fassbender,Shinji Yuasa,Alina M. Deac###
(120506, 120511)
 Currently, thestructure that maximizes the output power is an Fe/MgO/Fe-type magnetic tunneljunction (MTJ) with a fixed layer magnetized in the plane of the layers and afree layer magnetized perpendicular to the plane.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Mn
###Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication|Ewa Kowalska,Akio Fukushima,Volker Sluka,Ciarán Fowley,Attila Kákay,Yuriy Aleksandrov,Jürgen Lindner,Jürgen Fassbender,Shinji Yuasa,Alina M. Deac###
(120798, 120798)
 Thuswe expect the bias dependence of the TMR to have an even more dramatic effectin MTJs with Mn-Ga-based free layers, which could be used to design wirelessoscillators extending towards the T<missing VAR>Hz gap, but have been experimentally shownto exhibit a non-trivial TMR bias dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication|Ewa Kowalska,Akio Fukushima,Volker Sluka,Ciarán Fowley,Attila Kákay,Yuriy Aleksandrov,Jürgen Lindner,Jürgen Fassbender,Shinji Yuasa,Alina M. Deac###
(120800, 120800)
 Thuswe expect the bias dependence of the TMR to have an even more dramatic effectin MTJs with Mn-Ga-based free layers, which could be used to design wirelessoscillators extending towards the T<missing VAR>Hz gap, but have been experimentally shownto exhibit a non-trivial TMR bias dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs/Fe
###Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions|J. Moser,M. Zenger,C. Gerl,D. Schuh,R. Meier,P. Chen,G. Bayreuther,W. Wegscheider,D. Weiss,C. -H. Lai,R. -T. Huang,M. Kosuth,H. Ebert###
(120890, 120895)
Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs/Fe
###Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions|J. Moser,M. Zenger,C. Gerl,D. Schuh,R. Meier,P. Chen,G. Bayreuther,W. Wegscheider,D. Weiss,C. -H. Lai,R. -T. Huang,M. Kosuth,H. Ebert###
(120914, 120919)
 We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs
###Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions|J. Moser,M. Zenger,C. Gerl,D. Schuh,R. Meier,P. Chen,G. Bayreuther,W. Wegscheider,D. Weiss,C. -H. Lai,R. -T. Huang,M. Kosuth,H. Ebert###
(120954, 120957)
The tunneling magnetoresistance effect (TMR) was probed for different types ofFe/GaAs interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs
###Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions|J. Moser,M. Zenger,C. Gerl,D. Schuh,R. Meier,P. Chen,G. Bayreuther,W. Wegscheider,D. Weiss,C. -H. Lai,R. -T. Huang,M. Kosuth,H. Ebert###
(121073, 121076)
 This is a first experimental signature for band structureeffects at a Fe/GaAs interface and relevant for spin injection experiments.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Al/Co
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(121117, 121121)
Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[132.0, 100, '%', 3]

Co/AlO
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(121263, 121266)
 Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[10.0, 100, '%', 0]

Al/AlO
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(121269, 121272)
 Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 100, '%', 0]

Co
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(121275, 121275)
 Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 100, '%', 0]

Al
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(121299, 121299)
 Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 100, '%', 0]

C
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(121338, 121338)
 The effect is substantiallyreduced at high bias and temperatures above the T<missing VAR>C of the Al.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 100, '%', 1]

Al
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(121344, 121344)
 The effect is substantiallyreduced at high bias and temperatures above the T<missing VAR>C of the Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 100, '%', 1]

Al
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(121393, 121393)
 Theexperimental results are interpreted as due to spin imbalance of chargecarriers resulting in suppression of the superconducting gap of the Al island.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 100, '%', 2]

S
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(121788, 121788)
 This paper presents a physics-based modeling framework for the analysis andtransient simulation of circuits containing Spin-Transfer Torque (STT) MagneticTunnel Junction (MTJ) devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 28, 'nm', 3]

V
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(121861, 121861)
 The framework provides the tools to analyze thestochastic behavior of MTJs and to generate Verilog-A compact models for theirsimulation in large VL<missing VAR>SI designs, addressing the need for an industry-readymodel accounting for real-world reliability and scalability requirements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 28, 'nm', 2]

SI
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(121863, 121864)
 The framework provides the tools to analyze thestochastic behavior of MTJs and to generate Verilog-A compact models for theirsimulation in large VL<missing VAR>SI designs, addressing the need for an industry-readymodel accounting for real-world reliability and scalability requirements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 28, 'nm', 2]

S
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(121931, 121931)
Device dynamics are described by the Landau-Lifshitz-Gilbert-Slonczewsky(s-LLGS ) stochastic magnetization considering Voltage-Controlled MagneticAnisotropy (VCM<missing VAR>A) and the non-negligible statistical effects caused by thermalnoise.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 28, 'nm', 1]

VC
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(121951, 121952)
Device dynamics are described by the Landau-Lifshitz-Gilbert-Slonczewsky(s-LLGS ) stochastic magnetization considering Voltage-Controlled MagneticAnisotropy (VCM<missing VAR>A) and the non-negligible statistical effects caused by thermalnoise.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 28, 'nm', 1]

OO
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(121991, 121992)
 Model behavior is validated against the OOMMF magnetic simulator and itsperformance is characterized on a 1-Mb 28 nm Magnetoresistive-RAM (MRAM) memoryproduct.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 28, 'nm', 0]

F
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(121995, 121995)
 Model behavior is validated against the OOMMF magnetic simulator and itsperformance is characterized on a 1-Mb 28 nm Magnetoresistive-RAM (MRAM) memoryproduct.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 28, 'nm', 0]

CIS
###Time-Dependent Spintronic Transport and Current-Induced Spin Transfer Torque in Magnetic Tunnel Junctions|Zhen-Gang Zhu,Gang Su,Qing-Rong Zheng,Biao Jin###
(122523, 122525)
 The responses of the electrical current and the current-induced spin transfertorque (CISTT) to an ac bias in addition to a dc bias in a magnetic tunneljunction are investigated by means of the time-dependent nonquilibrium Greenfunction technique.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###Time-Dependent Spintronic Transport and Current-Induced Spin Transfer Torque in Magnetic Tunnel Junctions|Zhen-Gang Zhu,Gang Su,Qing-Rong Zheng,Biao Jin###
(122600, 122602)
 The time-averaged current (time-averaged CISTT) isformulated in the form of a summation of dc current (dc CISTT) multiplied byproducts of Bessel functions with the energy levels shifted by m<missing VAR>hbar omega0.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###Time-Dependent Spintronic Transport and Current-Induced Spin Transfer Torque in Magnetic Tunnel Junctions|Zhen-Gang Zhu,Gang Su,Qing-Rong Zheng,Biao Jin###
(122633, 122635)
 The time-averaged current (time-averaged CISTT) isformulated in the form of a summation of dc current (dc CISTT) multiplied byproducts of Bessel functions with the energy levels shifted by m<missing VAR>hbar omega0.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Magnetic coherent tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(123112, 123113)
The theory can answer the two basic problems present in MgO-based MTJs (1) Whydoes the tunneling magnetoresistance (TMR) oscillate with the barrierthickness?
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Magnetic coherent tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(123412, 123414)
, MoS2 and graphite,and most feasible for industries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(123487, 123488)
 Magnetization switching by spin-orbit torque (SOT) via spin Hall effectrepresents as a competitive alternative to that by spin-transfer torque (STT)used for magnetoresistive random access memory (MRAM), as it does not requirehigh-density current to go through the tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(123524, 123524)
 Magnetization switching by spin-orbit torque (SOT) via spin Hall effectrepresents as a competitive alternative to that by spin-transfer torque (STT)used for magnetoresistive random access memory (MRAM), as it does not requirehigh-density current to go through the tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(123594, 123595)
 For perpendicular MRAM<missing VAR>,however, SOT<missing VAR> driven switching of the free layer requires an external in-planefield, which poses limitation for viability in practical applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Ir)
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(123673, 123675)
 Here wedemonstrate field-free magnetization switching of a perpendicular magnet byutilizing an Iridium (Ir) layer.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(123682, 123682)
 The Ir layer not only provides SOTs via spinHall effect, but also induce interlayer exchange coupling with an in-planemagnetic layer that eliminates the need for the external field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(123692, 123693)
 The Ir layer not only provides SOTs via spinHall effect, but also induce interlayer exchange coupling with an in-planemagnetic layer that eliminates the need for the external field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(123759, 123759)
 Such dualfunctions of the Ir layer allows future build-up of magnetoresistive stacks formemory and logic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(123799, 123800)
 Experimental observations show that the SOT<missing VAR>driven field-free magnetization reversal is characterized as domain nucleationand expansion.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SKK
###A proper ballistic calculation of tunneling conductance for real junctions|P. M. Levy,K. Wang,P. H. Dederichs,C. Heide,S. Zhang,L. Szunyogh,P. Weinberger###
(123931, 123933)
 Employing an ab initio Screened Korringa-Kohn-Rostoker (SKKR) band structuremethod for a metal-vacuum-metal junction, we find that the tunnel conductanceis different when it is calculated across the barrier and far from it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A proper ballistic calculation of tunneling conductance for real junctions|P. M. Levy,K. Wang,P. H. Dederichs,C. Heide,S. Zhang,L. Szunyogh,P. Weinberger###
(124114, 124114)
 In this case thepredicted tunneling magnetoresistance is larger.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(124475, 124475)
 New mechanism of magnetoresistance, based on tunneling-emission of spinpolarized electrons from ferromagnets (FM) into semiconductors (S) andprecession of electron spin in the semiconductor layer under external magneticfield, is described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 100, 'GHz', 2]

(S)
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(124483, 124485)
 New mechanism of magnetoresistance, based on tunneling-emission of spinpolarized electrons from ferromagnets (FM) into semiconductors (S) andprecession of electron spin in the semiconductor layer under external magneticfield, is described.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 100, 'GHz', 2]

F
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(124523, 124523)
 The FM<missing VAR>-S-FM<missing VAR> structure is considered, which includes verythin heavily doped (delta-doped) layers at FM<missing VAR>-S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 100, 'GHz', 1]

S
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(124526, 124526)
 The FM<missing VAR>-S-FM<missing VAR> structure is considered, which includes verythin heavily doped (delta-doped) layers at FM<missing VAR>-S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 100, 'GHz', 1]

F
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(124528, 124528)
 The FM<missing VAR>-S-FM<missing VAR> structure is considered, which includes verythin heavily doped (delta-doped) layers at FM<missing VAR>-S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 100, 'GHz', 1]

F
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(124561, 124561)
 The FM<missing VAR>-S-FM<missing VAR> structure is considered, which includes verythin heavily doped (delta-doped) layers at FM<missing VAR>-S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 100, 'GHz', 1]

S
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(124564, 124564)
 The FM<missing VAR>-S-FM<missing VAR> structure is considered, which includes verythin heavily doped (delta-doped) layers at FM<missing VAR>-S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 100, 'GHz', 1]

At
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(124569, 124569)
 At certainparameters the structure is highly sensitive at room-temperature to variationsof the field with frequencies up to 100 GHz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 100, 'GHz', 0]

F
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(124652, 124652)
 The current oscillates with thefield, and its relative amplitude is determined only by the spin polarizationsof FM<missing VAR>-S junctions at relatively large bias voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 100, 'GHz', 1]

S
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(124655, 124655)
 The current oscillates with thefield, and its relative amplitude is determined only by the spin polarizationsof FM<missing VAR>-S junctions at relatively large bias voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 100, 'GHz', 1]

B
###Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions|M. Wagenknecht,H. Eitel,T. Nachtrab,J. B. Philipp,R. Gross,R. Kleiner,D. Koelle###
(124752, 124752)
 Using low-temperature scanning laser microscopy we directly image electrictransport in a magnetoresistive element, a manganite thin film intersected by agrain boundary (G<missing VAR>B).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions|M. Wagenknecht,H. Eitel,T. Nachtrab,J. B. Philipp,R. Gross,R. Kleiner,D. Koelle###
(124802, 124802)
 Imaging at variable temperature allows reconstruction andcomparison of the local resistance vs temperature for both, the manganite filmand the G<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions|M. Wagenknecht,H. Eitel,T. Nachtrab,J. B. Philipp,R. Gross,R. Kleiner,D. Koelle###
(124822, 124822)
 Imaging at low temperature also shows that the G<missing VAR>B switches betweendifferent resistive states due to the formation and growth of magnetic domainsalong the G<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions|M. Wagenknecht,H. Eitel,T. Nachtrab,J. B. Philipp,R. Gross,R. Kleiner,D. Koelle###
(124859, 124859)
 Imaging at low temperature also shows that the G<missing VAR>B switches betweendifferent resistive states due to the formation and growth of magnetic domainsalong the G<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Anisotropic magnetoresistance in nanocontacts|D. Jacob,J. Fernandez-Rossier,J. J. Palacios###
(124970, 124970)
 We present ab initio calculations of the evolution of anisotropicmagnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnelregime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropic magnetoresistance in nanocontacts|D. Jacob,J. Fernandez-Rossier,J. J. Palacios###
(125022, 125022)
 In systems without localized states, like chemically pure breakjunctions, large AMR only occurs if the orbital polarization of the current islarge, regardless of the anisotropy of the density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropic magnetoresistance in nanocontacts|D. Jacob,J. Fernandez-Rossier,J. J. Palacios###
(125094, 125094)
 In systems thatdisplay localized states close to the Fermi energy, like a single electrontransistor with ferromagnetic electrodes, large AMR is related to the variationof the Fermi energy as a function of the magnetization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Robust spin-transfer torque and magnetoresistance in non-collinear antiferromagnetic junctions|Srikrishna Ghosh,Aurelien Manchon,Jakub Železný###
(125347, 125347)
 In addition, we show that the non-collinear order results in aspin-transfer torque that is in several key aspects different from thespin-transfer torque in ferromagnetic junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(125445, 125446)
 We demonstrate superconducting vertical interconnect access (VIA) contacts toa monolayer of molybdenum disulfide (MoS2), a layered semiconductor withhighly relevant electronic and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(MoS2)
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(125465, 125469)
 We demonstrate superconducting vertical interconnect access (VIA) contacts toa monolayer of molybdenum disulfide (MoS2), a layered semiconductor withhighly relevant electronic and optical properties.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(125494, 125494)
 As a contact material we useMoRe, a superconductor with a high critical magnetic field and high criticaltemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoRe
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(125507, 125508)
 As a contact material we useMoRe, a superconductor with a high critical magnetic field and high criticaltemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(125575, 125575)
 Inaddition, we find MoS2 regions that are strongly coupled to thesuperconductor, resulting in resonant Andreev tunneling and junction dependentgap characteristics, suggesting a superconducting proximity effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(125585, 125587)
 Inaddition, we find MoS2 regions that are strongly coupled to thesuperconductor, resulting in resonant Andreev tunneling and junction dependentgap characteristics, suggesting a superconducting proximity effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(125680, 125682)
Magnetoresistance measurements show that the bandstructure and the highintrinsic carrier mobility remain intact in the bulk of the MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(125692, 125693)
 This typeof VIA contact is applicable to a large variety of layered materials andsuperconducting contacts, opening up a path to monolayer semiconductors as aplatform for superconducting hybrid devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Resonant spin transfer torque nano-oscillators|Abhishek Sharma,Ashwin A Tulapurkar,Bhaskaran Muralidharan###
(125865, 125865)
 In this letter, we theoretically propose to useresonant spin filtering in pentalayer magnetic tunnel junctions as a possibleroute to alleviate these issues and present device designs geared toward a highmicrowave output power and an efficient conversion of the d.c.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 775, '%', 4],[267.0, 1300, '%', 4]

VC
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(126326, 126327)
 Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is awriting technique for voltage-controlled magnetoresistive random access memory(VCMRAM), which is expected to be an ultimate non-volatile memory withultra-low power consumption.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(126367, 126367)
 In conventional dynamic switching, the width ofsub-nanosecond write voltage pulses must be precisely controlled to achieve asufficiently low write-error rate (WER).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(126419, 126419)
 In conventional dynamic switching, the width ofsub-nanosecond write voltage pulses must be precisely controlled to achieve asufficiently low write-error rate (WER).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VC
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(126454, 126455)
 This very narrow tolerance of pulsewidth is the biggest technical difficulty in developing VCMRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VC
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(126481, 126482)
 Heavily dampedprecessional switching is a writing scheme for VCMRAM<missing VAR> with a substantially hightolerance of pulse width although the minimum WER has been much higher thanthat of conventional dynamic switching with an optimum pulse width.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(126511, 126511)
 Heavily dampedprecessional switching is a writing scheme for VCMRAM<missing VAR> with a substantially hightolerance of pulse width although the minimum WER has been much higher thanthat of conventional dynamic switching with an optimum pulse width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(126547, 126547)
 In thisstudy, we theoretically investigate the effect of MTJ shape and the directionof the applied magnetic field on the WER of heavily damped precessionalswitching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(126594, 126594)
 In thisstudy, we theoretically investigate the effect of MTJ shape and the directionof the applied magnetic field on the WER of heavily damped precessionalswitching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(126620, 126620)
 The results show that the WER in elliptical-cylinder MTJ can beseveral orders of magnitude smaller than that in usual circular-cylinder MTJwhen the external magnetic field is applied parallel to the minor axis of theellipse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(126704, 126704)
 The reduction in WER is due to the fact that the demagnetization fieldnarrows the component of the magnetization distribution perpendicular to theplane direction immediately before the voltage is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Gate voltage controlled electronic transport through a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator|K. H. Zhang,Z. C. Wang,Q. R. Zheng,G. Su###
(127022, 127022)
 In addition, when there exists amagnetization component in the surface plane, it is shown that only thecomponent parallel to the junction interface has an influence on theconductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(127810, 127810)
 We report a numerical study on Aharonov-Bohm (AB) effect and parity selectivetunneling in pn junctions based on zigzag graphene nanoribbon rings.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(127870, 127870)
 We findthat when applying a magnetic field to the ring, the AB interference canreverse the parity symmetry of incoming waves and hence can strongly modulatethe parity selective transmission through the system.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(127942, 127942)
 Therefore, thetransmission between two states of different parity exhibits the ABoscillations with a pi-phase shift, compared to the case of states of sameparity.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(128060, 128060)
 Our study thus presents a newproperty of the AB interference, which could be helpful to further understandthe transport properties of graphene mesoscopic-systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2Cr
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(128115, 128117)
Structural and magneto-transport characterization of Co2Crx<missing VAR>Fe(1-x)Al Heusler alloy films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 630, 'K', 3],[288.0, 37, '%', 5]

Fe(1-x)Al
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(128119, 128125)
Structural and magneto-transport characterization of Co2Crx<missing VAR>Fe(1-x)Al Heusler alloy films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[193.0, 630, 'K', 3],[280.0, 37, '%', 5]

Co2Cr
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(128161, 128163)
 We investigate the structure and magneto-transport properties of thin filmsof the Co2Crx<missing VAR>Fe(1-x)Al full-Heusler compound, which is predicted to be ahalf-metal by first-principles theoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 630, 'K', 2],[242.0, 37, '%', 4]

Fe(1-x)Al
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(128165, 128171)
 We investigate the structure and magneto-transport properties of thin filmsof the Co2Crx<missing VAR>Fe(1-x)Al full-Heusler compound, which is predicted to be ahalf-metal by first-principles theoretical calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[147.0, 630, 'K', 2],[234.0, 37, '%', 4]

Si
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(128258, 128258)
 Thin films aredeposited by magnetron sputtering at room temperature on various substrates inorder to tune the growth from polycrystalline on thermally oxidized Sisubstrates to highly textured and even epitaxial on MgO(001) substrates,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 630, 'K', 1],[147.0, 37, '%', 3]

MgO
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(128384, 128385)
 Polycrystalline Heusler films combinedwith MgO barriers are incorporated into magnetic tunnel junctions and yield 37%magnetoresistance at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 630, 'K', 2],[20.0, 37, '%', 0]

La5
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(128444, 128445)
Neutron scattering study of magnetic phase separation in nanocrystalline La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(128448, 128449)
Neutron scattering study of magnetic phase separation in nanocrystalline La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(128452, 128454)
Neutron scattering study of magnetic phase separation in nanocrystalline La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(128487, 128487)
 We demonstrate that magnetic phase separation and competing spin order in thecolossal magnetoresistive (CMR) manganites can be directly explored via tuningstrain in bulk samples of nanocrystalline La1-xCax<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xCa
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(128519, 128523)
 We demonstrate that magnetic phase separation and competing spin order in thecolossal magnetoresistive (CMR) manganites can be directly explored via tuningstrain in bulk samples of nanocrystalline La1-xCax<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(128525, 128527)
 We demonstrate that magnetic phase separation and competing spin order in thecolossal magnetoresistive (CMR) manganites can be directly explored via tuningstrain in bulk samples of nanocrystalline La1-xCax<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La5
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(128585, 128586)
 Our resultsshow that strain can be reversibly frozen into the lattice in order tostabilize coexisting antiferromagnetic domains within the nominallyferromagnetic metallic state of La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(128589, 128590)
 Our resultsshow that strain can be reversibly frozen into the lattice in order tostabilize coexisting antiferromagnetic domains within the nominallyferromagnetic metallic state of La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(128593, 128595)
 Our resultsshow that strain can be reversibly frozen into the lattice in order tostabilize coexisting antiferromagnetic domains within the nominallyferromagnetic metallic state of La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(128661, 128661)
 The measurement oftunable phase separation via magnetic neutron powder diffraction presents adirect route of exploring the correlated spin properties of phase separatedcharge/magnetic order in highly strained CMR materials and opens a potentialavenue for realizing intergrain spin tunnel junction networks with enhanced CMRbehavior in a chemically homogeneous material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(128696, 128696)
 The measurement oftunable phase separation via magnetic neutron powder diffraction presents adirect route of exploring the correlated spin properties of phase separatedcharge/magnetic order in highly strained CMR materials and opens a potentialavenue for realizing intergrain spin tunnel junction networks with enhanced CMRbehavior in a chemically homogeneous material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Data Storage: Review of Heusler Compounds|Zhaoqiang Bai,Lei Shen,Guchang Han,Yuan ping Feng###
(128735, 128735)
 In the recent decade, the family of Heusler compounds has attractedtremendous scientific and technological interest in the field of spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Data Storage: Review of Heusler Compounds|Zhaoqiang Bai,Lei Shen,Guchang Han,Yuan ping Feng###
(128859, 128859)
 In this article, we provide a comprehensivereview on the applications of the Heusler family in magnetic data storage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Data Storage: Review of Heusler Compounds|Zhaoqiang Bai,Lei Shen,Guchang Han,Yuan ping Feng###
(128900, 128900)
 Inaddition to their important roles in the performance improvement of thesedevices, we also try to point out the challenges as well as possible solutions,of the current Heusler-based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MoS2/Fe
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(129054, 129060)
Efficient spin injection and giant magnetoresistance in Fe/MoS2/Fe junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[113.0, 45, '%', 2],[173.0, 300, '%', 4]

Fe/MoS2/Fe
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(129075, 129081)
 We demonstrate giant magnetoresistance in Fe/MoS2/Fe junctions by means oftextitab-initio transport calculations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[92.0, 45, '%', 1],[152.0, 300, '%', 3]

MoS2
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(129130, 129132)
 We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 45, '%', 0],[101.0, 300, '%', 2]

Fe
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(129142, 129142)
 We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 45, '%', 0],[91.0, 300, '%', 2]

MoS2
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(129159, 129161)
 We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 45, '%', 0],[72.0, 300, '%', 2]

Fe
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(129198, 129198)
 This isthe result of the strong coupling between the Fe and S atoms at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 45, '%', 1],[35.0, 300, '%', 1]

S
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(129202, 129202)
 This isthe result of the strong coupling between the Fe and S atoms at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 45, '%', 1],[31.0, 300, '%', 1]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(129362, 129362)
 We propose spin transfer torque--magnetoresistive random access memory(STT-MRAM) based on magneto-resistance and spin transfer torque physics ofband-pass spin filtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 1100, '%', 4]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(129451, 129451)
 Utilizing the electronic analogs of optical phenomenasuch as anti-reflection coating and resonance for spintronic devices, wepresent the design of an STT-MRAM<missing VAR> device with improved features when comparedwith a traditional trilayer device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 1100, '%', 3]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(129582, 129582)
 Employing the Greens<missing VAR> function spintransport formalism coupled self-consistently with the stochasticLandau-Lifshitz-Gilbert-Slonczewski equation, we present the design of anSTT-MRAM<missing VAR> based on the band-pass filtering having an ultra-high TMR (3.510e<missing VAR>4)and large spin current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1100, '%', 1]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(129640, 129640)
 We demonstrate that the STT-MRAM<missing VAR> design havingband-pass spin filtering are nearly 1100% more energy efficient thantraditional trilayer magnetic tunnel junction (MTJ) based STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1100, '%', 0]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(129696, 129696)
 We demonstrate that the STT-MRAM<missing VAR> design havingband-pass spin filtering are nearly 1100% more energy efficient thantraditional trilayer magnetic tunnel junction (MTJ) based STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1100, '%', 0]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(129746, 129746)
 We alsopresent detailed probabilistic switching and energy analysis for a trilayer MTJand band-pass filtering based STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 1100, '%', 1]

Fe/GaAs/Au
###Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions|J. Moser,A. Matos-Abiague,D. Schuh,W. Wegscheider,J. Fabian,D. Weiss###
(129815, 129820)
Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs/Au
###Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions|J. Moser,A. Matos-Abiague,D. Schuh,W. Wegscheider,J. Fabian,D. Weiss###
(129865, 129870)
 We report the observation of tunneling anisotropic magnetoresistance effect(TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Impurities and Inelastic Processes in Magnetic Tunnel Junctions|A. M. Bratkovsky,J. H. Nickel###
(130853, 130853)
 Previously we predicted that defects in the barrierwould result in reduced effective polarization P of the impurity assistedcurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 3, 'd', 1]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131124, 131124)
 Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to thespin Hall effects (SHEs) provides a facile means of probing in-planemagnetization to avoid complex magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 10, 'times', 2]

(SHEs)
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131150, 131154)
 Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to thespin Hall effects (SHEs) provides a facile means of probing in-planemagnetization to avoid complex magnetic tunnel junctions.
Featurization successful!
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[183.0, 10, 'times', 2]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131193, 131193)
 However, the UMRsignal is very weak and usually requires a lock-in amplifier for detection evenin the bilayer involving Ta or Pt with a large spin Hall angle (SHA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 10, 'times', 1]

Ta
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131235, 131235)
 However, the UMRsignal is very weak and usually requires a lock-in amplifier for detection evenin the bilayer involving Ta or Pt with a large spin Hall angle (SHA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 10, 'times', 1]

Pt
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131239, 131239)
 However, the UMRsignal is very weak and usually requires a lock-in amplifier for detection evenin the bilayer involving Ta or Pt with a large spin Hall angle (SHA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 10, 'times', 1]

SH
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131254, 131255)
 However, the UMRsignal is very weak and usually requires a lock-in amplifier for detection evenin the bilayer involving Ta or Pt with a large spin Hall angle (SHA).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 10, 'times', 1]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131273, 131273)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 10, 'times', 0]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131286, 131286)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 10, 'times', 0]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131292, 131292)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 10, 'times', 0]

CoFeB
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131304, 131306)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 10, 'times', 0]

SH
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131317, 131318)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 10, 'times', 0]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131328, 131328)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 10, 'times', 0]

Ta/CoFeB
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131348, 131352)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[11.0, 10, 'times', 0]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131404, 131404)
 We furtherdemonstrate that the extracted AUMR by excluding thermal contributions showsreversal signs for the CoFeB and NiFe single layers with opposite SHAs,indicating that the AUMR may originate from the self-generated spinaccumulation interacting with magnetization through the giantmagnetoresistance-like mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 10, 'times', 1]

CoFeB
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131427, 131429)
 We furtherdemonstrate that the extracted AUMR by excluding thermal contributions showsreversal signs for the CoFeB and NiFe single layers with opposite SHAs,indicating that the AUMR may originate from the self-generated spinaccumulation interacting with magnetization through the giantmagnetoresistance-like mechanism.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 10, 'times', 1]

NiFe
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131433, 131434)
 We furtherdemonstrate that the extracted AUMR by excluding thermal contributions showsreversal signs for the CoFeB and NiFe single layers with opposite SHAs,indicating that the AUMR may originate from the self-generated spinaccumulation interacting with magnetization through the giantmagnetoresistance-like mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 10, 'times', 1]

SHAs
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131444, 131446)
 We furtherdemonstrate that the extracted AUMR by excluding thermal contributions showsreversal signs for the CoFeB and NiFe single layers with opposite SHAs,indicating that the AUMR may originate from the self-generated spinaccumulation interacting with magnetization through the giantmagnetoresistance-like mechanism.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 10, 'times', 1]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131457, 131457)
 We furtherdemonstrate that the extracted AUMR by excluding thermal contributions showsreversal signs for the CoFeB and NiFe single layers with opposite SHAs,indicating that the AUMR may originate from the self-generated spinaccumulation interacting with magnetization through the giantmagnetoresistance-like mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 10, 'times', 1]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131509, 131509)
 These results suggest that the AUMRcontributes UMR signals larger than the interfacial spin Hall UMR in theCoFeB-involved systems, providing a convenient and reliable approach to detectin-plane magnetization for the two-terminal spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 10, 'times', 2]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131516, 131516)
 These results suggest that the AUMRcontributes UMR signals larger than the interfacial spin Hall UMR in theCoFeB-involved systems, providing a convenient and reliable approach to detectin-plane magnetization for the two-terminal spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 10, 'times', 2]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131534, 131534)
 These results suggest that the AUMRcontributes UMR signals larger than the interfacial spin Hall UMR in theCoFeB-involved systems, providing a convenient and reliable approach to detectin-plane magnetization for the two-terminal spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 10, 'times', 2]

CoFeB
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(131543, 131545)
 These results suggest that the AUMRcontributes UMR signals larger than the interfacial spin Hall UMR in theCoFeB-involved systems, providing a convenient and reliable approach to detectin-plane magnetization for the two-terminal spintronic devices.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 10, 'times', 2]

Fe/MgO/Fe
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(131689, 131694)
 Strength of the the symmetry spin filtering effect (as defined by theasymptotic behavior of the tunneling magnetoresistance (TMR) at large barrierthicknesses induced by this effect) is studied for the Fe/MgO/Fe magnetictunnel junctions (MTJ).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[260.0, 10, ',', 3],[262.0, 0, '%', 3]

Fe
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(131730, 131730)
 Based on the analysis of the band structure of bulk Feand complex band structure of MgO we predict emphnative for the symmetryspin filtering effect linear increase of the TMR in Fe/MgO/Fe MTJ withincreasing number of MgO layers, N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 10, ',', 2],[226.0, 0, '%', 2]

MgO
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(131743, 131744)
 Based on the analysis of the band structure of bulk Feand complex band structure of MgO we predict emphnative for the symmetryspin filtering effect linear increase of the TMR in Fe/MgO/Fe MTJ withincreasing number of MgO layers, N.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 10, ',', 2],[212.0, 0, '%', 2]

Fe/MgO/Fe
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(131780, 131785)
 Based on the analysis of the band structure of bulk Feand complex band structure of MgO we predict emphnative for the symmetryspin filtering effect linear increase of the TMR in Fe/MgO/Fe MTJ withincreasing number of MgO layers, N.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[169.0, 10, ',', 2],[171.0, 0, '%', 2]

MgO
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(131800, 131801)
 Based on the analysis of the band structure of bulk Feand complex band structure of MgO we predict emphnative for the symmetryspin filtering effect linear increase of the TMR in Fe/MgO/Fe MTJ withincreasing number of MgO layers, N.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 10, ',', 2],[155.0, 0, '%', 2]

N
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(131806, 131806)
 Based on the analysis of the band structure of bulk Feand complex band structure of MgO we predict emphnative for the symmetryspin filtering effect linear increase of the TMR in Fe/MgO/Fe MTJ withincreasing number of MgO layers, N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 10, ',', 2],[150.0, 0, '%', 2]

Fe/MgO/Fe
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(131829, 131834)
 emphAb initio calculations oftransmission functions performed for the Fe/MgO/Fe MTJ confirm our theoreticalpredictions for the strength of the symmetry spin filtering effect in broadrange of energies and N.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[120.0, 10, ',', 1],[122.0, 0, '%', 1]

N
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(131880, 131880)
 emphAb initio calculations oftransmission functions performed for the Fe/MgO/Fe MTJ confirm our theoreticalpredictions for the strength of the symmetry spin filtering effect in broadrange of energies and N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 10, ',', 1],[76.0, 0, '%', 1]

Fe/MgO
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(131934, 131937)
 Our calculations also show that theemphcombination of the symmetry spin filtering effect and small surfacetransmission function in minority spin channel at the Fe/MgO interface isresponsible for large TMR>10,000% predicted for Fe/MgO/Fe MTJ for Ngeqslant 8.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 10, ',', 0],[19.0, 0, '%', 0]

Fe/MgO/Fe
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(131963, 131968)
 Our calculations also show that theemphcombination of the symmetry spin filtering effect and small surfacetransmission function in minority spin channel at the Fe/MgO interface isresponsible for large TMR>10,000% predicted for Fe/MgO/Fe MTJ for Ngeqslant 8.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[9.0, 10, ',', 0],[7.0, 0, '%', 0]

N
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(131976, 131976)
 Our calculations also show that theemphcombination of the symmetry spin filtering effect and small surfacetransmission function in minority spin channel at the Fe/MgO interface isresponsible for large TMR>10,000% predicted for Fe/MgO/Fe MTJ for Ngeqslant 8.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 10, ',', 0],[20.0, 0, '%', 0]

In
###TMR transition and highly sensitive pressure sensors based on magnetic tunnel junctions with black phosphorus barrier|Fang Henan,Li Qian,Xiao Mingwen,Liu Yan###
(132172, 132172)
In particular, the special band features of black phosphorus may bringintriguing physical characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132633, 132633)
Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 14, 'percent', 4]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132671, 132671)
 Delocalized carbon-based radical species with unpaired spin, such asphenalenyl (PL<missing VAR>Y) radical, opened avenues for developing multifunctional organicspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 14, 'percent', 3]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132673, 132673)
 Delocalized carbon-based radical species with unpaired spin, such asphenalenyl (PL<missing VAR>Y) radical, opened avenues for developing multifunctional organicspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 14, 'percent', 3]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132738, 132738)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 14, 'percent', 2]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132740, 132740)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 14, 'percent', 2]

Cu
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132745, 132745)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 14, 'percent', 2]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132747, 132747)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 14, 'percent', 2]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132749, 132749)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 14, 'percent', 2]

Zn
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132755, 132755)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 14, 'percent', 2]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132757, 132757)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 14, 'percent', 2]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132759, 132759)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 14, 'percent', 2]

O
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132772, 132772)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 14, 'percent', 2]

I
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132816, 132816)
 The nonlinear and weaklytemperature-dependent current-voltage (I-V) characteristics in combination withthe low organic barrier height suggest tunneling as the dominant transportmechanism in the structurally and dimensionally optimized OMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 14, 'percent', 1]

V
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132818, 132818)
 The nonlinear and weaklytemperature-dependent current-voltage (I-V) characteristics in combination withthe low organic barrier height suggest tunneling as the dominant transportmechanism in the structurally and dimensionally optimized OMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 14, 'percent', 1]

O
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132867, 132867)
 The nonlinear and weaklytemperature-dependent current-voltage (I-V) characteristics in combination withthe low organic barrier height suggest tunneling as the dominant transportmechanism in the structurally and dimensionally optimized OMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 14, 'percent', 1]

Cu
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132873, 132873)
 Cu-PL<missing VAR>Y-basedOMTJs, show a significant magnetoresistance up to 14 percent at roomtemperature due to the formation of hybrid states at the metal-moleculeinterfaces called spinterface, which reveals the importance of spin-dependentinterfacial modification in OMTJs design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 14, 'percent', 0]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132875, 132875)
 Cu-PL<missing VAR>Y-basedOMTJs, show a significant magnetoresistance up to 14 percent at roomtemperature due to the formation of hybrid states at the metal-moleculeinterfaces called spinterface, which reveals the importance of spin-dependentinterfacial modification in OMTJs design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 14, 'percent', 0]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132877, 132877)
 Cu-PL<missing VAR>Y-basedOMTJs, show a significant magnetoresistance up to 14 percent at roomtemperature due to the formation of hybrid states at the metal-moleculeinterfaces called spinterface, which reveals the importance of spin-dependentinterfacial modification in OMTJs design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 14, 'percent', 0]

O
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132882, 132882)
 Cu-PL<missing VAR>Y-basedOMTJs, show a significant magnetoresistance up to 14 percent at roomtemperature due to the formation of hybrid states at the metal-moleculeinterfaces called spinterface, which reveals the importance of spin-dependentinterfacial modification in OMTJs design.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 14, 'percent', 0]

O
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132959, 132959)
 Cu-PL<missing VAR>Y-basedOMTJs, show a significant magnetoresistance up to 14 percent at roomtemperature due to the formation of hybrid states at the metal-moleculeinterfaces called spinterface, which reveals the importance of spin-dependentinterfacial modification in OMTJs design.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 14, 'percent', 0]

In
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132967, 132967)
 In particular, Cu-PL<missing VAR>Y OMTJs shows astable voltage-driven resistive switching response that suggests their use as anew viable and scalable platform for building molecular scale quantummemristors and processors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 14, 'percent', 1]

Cu
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132972, 132972)
 In particular, Cu-PL<missing VAR>Y OMTJs shows astable voltage-driven resistive switching response that suggests their use as anew viable and scalable platform for building molecular scale quantummemristors and processors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 14, 'percent', 1]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132974, 132974)
 In particular, Cu-PL<missing VAR>Y OMTJs shows astable voltage-driven resistive switching response that suggests their use as anew viable and scalable platform for building molecular scale quantummemristors and processors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 14, 'percent', 1]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132976, 132976)
 In particular, Cu-PL<missing VAR>Y OMTJs shows astable voltage-driven resistive switching response that suggests their use as anew viable and scalable platform for building molecular scale quantummemristors and processors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 14, 'percent', 1]

O
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(132978, 132978)
 In particular, Cu-PL<missing VAR>Y OMTJs shows astable voltage-driven resistive switching response that suggests their use as anew viable and scalable platform for building molecular scale quantummemristors and processors.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 14, 'percent', 1]

N
###Transport across junctions of altermagnets with normal metals and ferromagnets|Sachchidanand Das,Dhavala Suri,Abhiram Soori###
(133176, 133176)
 We study (i) altermagnet-normal metal(NM) and (ii) altermagnet-ferromagnet (FM) junctions, with the aim to quantifytransport properties such as conductivity and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Transport across junctions of altermagnets with normal metals and ferromagnets|Sachchidanand Das,Dhavala Suri,Abhiram Soori###
(133191, 133191)
 We study (i) altermagnet-normal metal(NM) and (ii) altermagnet-ferromagnet (FM) junctions, with the aim to quantifytransport properties such as conductivity and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Transport across junctions of altermagnets with normal metals and ferromagnets|Sachchidanand Das,Dhavala Suri,Abhiram Soori###
(133266, 133266)
 Themagnetoresistance of the AM<missing VAR>-FM<missing VAR> junction switches sign when AM<missing VAR> is rotated by90circ, -a feature unique to the altermagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133317, 133317)
Nonvolatile SRAM architecture using M<missing VAR>OSFET-based spin-transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133327, 133329)
Nonvolatile SRAM architecture using M<missing VAR>OSFET-based spin-transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NV
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133364, 133365)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133367, 133367)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133392, 133394)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133419, 133421)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133426, 133427)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133430, 133432)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133438, 133439)
 PS-M<missing VAR>OSFET is a new circuit approach toreproduce the functions of spin-transistors, based on recently progressedmagnetoresistive random access memory (MRAM) technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133442, 133444)
 PS-M<missing VAR>OSFET is a new circuit approach toreproduce the functions of spin-transistors, based on recently progressedmagnetoresistive random access memory (MRAM) technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NV
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133505, 133506)
 The proposed NV-SRAMcell can be simply configured by connecting two PS-M<missing VAR>OSFE<missing VAR>Ts to the storage nodesof a standard SRAM cell.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133508, 133508)
 The proposed NV-SRAMcell can be simply configured by connecting two PS-M<missing VAR>OSFE<missing VAR>Ts to the storage nodesof a standard SRAM cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133530, 133531)
 The proposed NV-SRAMcell can be simply configured by connecting two PS-M<missing VAR>OSFE<missing VAR>Ts to the storage nodesof a standard SRAM cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133534, 133536)
 The proposed NV-SRAMcell can be simply configured by connecting two PS-M<missing VAR>OSFE<missing VAR>Ts to the storage nodesof a standard SRAM cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133555, 133555)
 The proposed NV-SRAMcell can be simply configured by connecting two PS-M<missing VAR>OSFE<missing VAR>Ts to the storage nodesof a standard SRAM cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133606, 133607)
 The logic information of the storage nodes can beelectrically stored into the magnetic tunnel junctions (MTJs) of the PS-M<missing VAR>OSFE<missing VAR>Tsby current-induced magnetization switching (CIM<missing VAR>S), and the stored informationis automatically restored when the inverter loop circuit wakes up.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133610, 133612)
 The logic information of the storage nodes can beelectrically stored into the magnetic tunnel junctions (MTJs) of the PS-M<missing VAR>OSFE<missing VAR>Tsby current-induced magnetization switching (CIM<missing VAR>S), and the stored informationis automatically restored when the inverter loop circuit wakes up.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CI
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133628, 133629)
 The logic information of the storage nodes can beelectrically stored into the magnetic tunnel junctions (MTJs) of the PS-M<missing VAR>OSFE<missing VAR>Tsby current-induced magnetization switching (CIM<missing VAR>S), and the stored informationis automatically restored when the inverter loop circuit wakes up.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133631, 133631)
 The logic information of the storage nodes can beelectrically stored into the magnetic tunnel junctions (MTJs) of the PS-M<missing VAR>OSFE<missing VAR>Tsby current-induced magnetization switching (CIM<missing VAR>S), and the stored informationis automatically restored when the inverter loop circuit wakes up.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133665, 133665)
 In addition,the proposed NV-SRAM cell has no influence on the performance of normal SRAMoperations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NV
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133675, 133676)
 In addition,the proposed NV-SRAM cell has no influence on the performance of normal SRAMoperations.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133678, 133678)
 In addition,the proposed NV-SRAM cell has no influence on the performance of normal SRAMoperations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133701, 133701)
 In addition,the proposed NV-SRAM cell has no influence on the performance of normal SRAMoperations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NV
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133745, 133746)
 Low power dissipation and high degree of freedom of MTJ design arealso remarkable features for NV-SRAM using PS-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133748, 133748)
 Low power dissipation and high degree of freedom of MTJ design arealso remarkable features for NV-SRAM using PS-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133755, 133756)
 Low power dissipation and high degree of freedom of MTJ design arealso remarkable features for NV-SRAM using PS-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(133759, 133761)
 Low power dissipation and high degree of freedom of MTJ design arealso remarkable features for NV-SRAM using PS-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Magnetoresistance of an Anderson insulator of bosons|Anirban Gangopadhyay,Victor Galitski,Markus Mueller###
(133918, 133920)
 The excitations become more localized withincreasing field (in sharp contrast to generic fermionic excitations which getweakly delocalized) the localization length xi(B) is found to change asxi-1(B)-xi-1(0)sim B4/5.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Magnetoresistance of an Anderson insulator of bosons|Anirban Gangopadhyay,Victor Galitski,Markus Mueller###
(133936, 133938)
 The excitations become more localized withincreasing field (in sharp contrast to generic fermionic excitations which getweakly delocalized) the localization length xi(B) is found to change asxi-1(B)-xi-1(0)sim B4/5.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B4
###Magnetoresistance of an Anderson insulator of bosons|Anirban Gangopadhyay,Victor Galitski,Markus Mueller###
(133948, 133949)
 The excitations become more localized withincreasing field (in sharp contrast to generic fermionic excitations which getweakly delocalized) the localization length xi(B) is found to change asxi-1(B)-xi-1(0)sim B4/5.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang###
(134478, 134479)
 We report a first-principles study on the tunnel magnetoresistance (TMR) andspin-injection efficiency (SIE) through phosphorene with nickel electrodesunder the mechanical tension and bending on the phosphorene region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0, 'to', 2],[85.0, 15, '%', 2],[135.0, 107, '%', 2],[144.0, 10, '%', 2],[163.0, 8, '%', 2],[170.0, 43, '%', 2],[212.0, 7, '%', 3],[217.0, 50, '%', 3],[232.0, -3.9, '%', 3],[258.0, 70, '%', 3],[271.0, 30, '%', 3]

SI
###Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang###
(134526, 134527)
 Both theTMR and SIE<missing VAR> are largely improved under these mechanical deformations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0, 'to', 1],[37.0, 15, '%', 1],[87.0, 107, '%', 1],[96.0, 10, '%', 1],[115.0, 8, '%', 1],[122.0, 43, '%', 1],[164.0, 7, '%', 2],[169.0, 50, '%', 2],[184.0, -3.9, '%', 2],[210.0, 70, '%', 2],[223.0, 30, '%', 2]

SI
###Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang###
(134631, 134632)
 For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 0, 'to', 0],[67.0, 15, '%', 0],[17.0, 107, '%', 0],[8.0, 10, '%', 0],[10.0, 8, '%', 0],[17.0, 43, '%', 0],[59.0, 7, '%', 1],[64.0, 50, '%', 1],[79.0, -3.9, '%', 1],[105.0, 70, '%', 1],[118.0, 30, '%', 1]

SI
###Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang###
(134722, 134723)
Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0, 'to', 1],[158.0, 15, '%', 1],[108.0, 107, '%', 1],[99.0, 10, '%', 1],[80.0, 8, '%', 1],[73.0, 43, '%', 1],[31.0, 7, '%', 0],[26.0, 50, '%', 0],[11.0, -3.9, '%', 0],[14.0, 70, '%', 0],[27.0, 30, '%', 0]

SI
###Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang###
(134778, 134779)
 Suchbehaviors of the TMR and SIE<missing VAR> are mainly affected by the transmission of spin-upelectrons in the parallel configuration, which is highly depended on theapplied mechanical tension and bending.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 0, 'to', 2],[214.0, 15, '%', 2],[164.0, 107, '%', 2],[155.0, 10, '%', 2],[136.0, 8, '%', 2],[129.0, 43, '%', 2],[87.0, 7, '%', 1],[82.0, 50, '%', 1],[67.0, -3.9, '%', 1],[41.0, 70, '%', 1],[28.0, 30, '%', 1]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(134929, 134929)
 The development of energy-efficient neuromorphic hardware using spintronicdevices based on antiferromagnetic (AFM) skyrmion motion on nanotracks hasgained considerable interest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 9.2, '%', 5]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(134995, 134995)
 Owing to its properties such as robustnessagainst external magnetic fields, negligible stray fields, and zero nettopological charge, AFM<missing VAR> skyrmions follow straight trajectories that preventtheir annihilation at nanoscale racetrack edges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 9.2, '%', 4]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(135031, 135031)
 This makes the AFM<missing VAR> skyrmions amore favorable candidate over the ferromagnetic (FM) skyrmion for futurespintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 9.2, '%', 3]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(135052, 135052)
 This makes the AFM<missing VAR> skyrmions amore favorable candidate over the ferromagnetic (FM) skyrmion for futurespintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 9.2, '%', 3]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(135077, 135077)
 This work proposes an AFM<missing VAR> skyrmion-based neuron deviceexhibiting the leaky-integrate-fire (L<missing VAR>IF) functionality by exploiting thermalgradient or alternatively perpendicular magnetic anisotropy (PM<missing VAR>A) gradient inthe nanotrack for leaky behavior by moving the skyrmion in the direction tominimize the system energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 9.2, '%', 2]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(135102, 135102)
 This work proposes an AFM<missing VAR> skyrmion-based neuron deviceexhibiting the leaky-integrate-fire (L<missing VAR>IF) functionality by exploiting thermalgradient or alternatively perpendicular magnetic anisotropy (PM<missing VAR>A) gradient inthe nanotrack for leaky behavior by moving the skyrmion in the direction tominimize the system energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 9.2, '%', 2]

P
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(135127, 135127)
 This work proposes an AFM<missing VAR> skyrmion-based neuron deviceexhibiting the leaky-integrate-fire (L<missing VAR>IF) functionality by exploiting thermalgradient or alternatively perpendicular magnetic anisotropy (PM<missing VAR>A) gradient inthe nanotrack for leaky behavior by moving the skyrmion in the direction tominimize the system energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 9.2, '%', 2]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(135187, 135187)
 Furthermore, it is shown that the AFM<missing VAR> skyrmioncouples efficiently to the soft ferromagnetic layer of a magnetic tunneljunction enabling efficient read-out of the skyrmion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 9.2, '%', 1]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(135268, 135268)
 The maximum change of9.2% in tunnel magnetoresistance (TMR) is estimated for detecting the AFM<missing VAR>skyrmion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 9.2, '%', 0]

IF
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(135305, 135306)
 Moreover, the proposed neuron device has the energy dissipation of4.32 fJ per L<missing VAR>IF operation thus, paving the path for developing energy-efficientdevices in antiferromagnetic spintronics for neuromorphic computing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 9.2, '%', 1]

F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(135361, 135361)
Spin-relaxation and magnetoresistance in FM<missing VAR>/SC/FM<missing VAR> tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC/F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(135364, 135367)
Spin-relaxation and magnetoresistance in FM<missing VAR>/SC/FM<missing VAR> tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(135409, 135409)
 The effect of spin relaxation on tunnel magnetoresistance (TMR) in aferromagnet/superconductor/ferromagnet (FM<missing VAR>/SC/FM) double tunnel junction istheoretically studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC/F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(135412, 135415)
 The effect of spin relaxation on tunnel magnetoresistance (TMR) in aferromagnet/superconductor/ferromagnet (FM<missing VAR>/SC/FM) double tunnel junction istheoretically studied.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SC
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(135441, 135442)
 The spin accumulation in SC is determined by balancingof the spin-injection rate and the spin-relaxation rate.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(135474, 135474)
 In the superconductingstate, the spin-relaxation time becomes longer with decreasing temperature,resulting in a rapid increase of TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(135529, 135529)
 The TMR of FM<missing VAR>/SC/FM<missing VAR> junctions provides auseful probe to extract information about spin-relaxation in superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC/F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(135532, 135535)
 The TMR of FM<missing VAR>/SC/FM<missing VAR> junctions provides auseful probe to extract information about spin-relaxation in superconductors.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MnBi2Te4
###Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4|Wen-Zheng Xu,Chun-Guang Chu,Zhen-Cun Pan,Jing-Jing Chen,An-Qi Wang,Zhen-Bing Tan,Peng-Fei Zhu,Xing-Guo Ye,Da-Peng Yu,Zhi-Min Liao###
(135594, 135598)
Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 10, 'mK', 2],[175.0, 0.1, 'meV', 4]

NbN
###Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4|Wen-Zheng Xu,Chun-Guang Chu,Zhen-Cun Pan,Jing-Jing Chen,An-Qi Wang,Zhen-Bing Tan,Peng-Fei Zhu,Xing-Guo Ye,Da-Peng Yu,Zhi-Min Liao###
(135613, 135614)
 We report magnetotransport measurements in the NbN/ magnetic topologicalinsulator MnBi2Te4 (MBT)/ NbN junction at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 10, 'mK', 1],[159.0, 0.1, 'meV', 3]

MnBi2Te4
###Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4|Wen-Zheng Xu,Chun-Guang Chu,Zhen-Cun Pan,Jing-Jing Chen,An-Qi Wang,Zhen-Bing Tan,Peng-Fei Zhu,Xing-Guo Ye,Da-Peng Yu,Zhi-Min Liao###
(135624, 135628)
 We report magnetotransport measurements in the NbN/ magnetic topologicalinsulator MnBi2Te4 (MBT)/ NbN junction at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 10, 'mK', 1],[145.0, 0.1, 'meV', 3]

NbN
###Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4|Wen-Zheng Xu,Chun-Guang Chu,Zhen-Cun Pan,Jing-Jing Chen,An-Qi Wang,Zhen-Bing Tan,Peng-Fei Zhu,Xing-Guo Ye,Da-Peng Yu,Zhi-Min Liao###
(135637, 135638)
 We report magnetotransport measurements in the NbN/ magnetic topologicalinsulator MnBi2Te4 (MBT)/ NbN junction at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 10, 'mK', 1],[135.0, 0.1, 'meV', 3]

At
###Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4|Wen-Zheng Xu,Chun-Guang Chu,Zhen-Cun Pan,Jing-Jing Chen,An-Qi Wang,Zhen-Bing Tan,Peng-Fei Zhu,Xing-Guo Ye,Da-Peng Yu,Zhi-Min Liao###
(135649, 135649)
 At 10 mK, thenonlinear current-voltage characteristic of the junction shows a tunnelingbehavior, indicating the existence of interfacial potential barriers within theheterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 10, 'mK', 0],[124.0, 0.1, 'meV', 2]

Bi2Sr2CaCu2O8
###Collective Josephson vortex dynamics in a finite number of intrinsic Josephson junctions|Myung-Ho Bae,Jae-Hyun Choi,Hu-Jong Lee###
(136084, 136092)
 We report the experimental confirmation of the collective transverse plasmamodes excited by the Josephson vortex lattice in stacks of intrinsic Josephsonjunctions in Bi2Sr2CaCu2O8x<missing VAR> single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Collective Josephson vortex dynamics in a finite number of intrinsic Josephson junctions|Myung-Ho Bae,Jae-Hyun Choi,Hu-Jong Lee###
(136128, 136130)
 Theexcitation was confirmed by analyzing the temperature (T) and magnetic field(H) dependencies of the multiple sub-branches in the Josephson-vortex-flowregion of the current-voltage characteristics of the system.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Collective Josephson vortex dynamics in a finite number of intrinsic Josephson junctions|Myung-Ho Bae,Jae-Hyun Choi,Hu-Jong Lee###
(136174, 136174)
 In the near-staticJosephson vortex state for a low tunneling bias current, pronouncedmagnetoresistance oscillations were observed, which represented atriangular-lattice vortex configuration along the c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Collective Josephson vortex dynamics in a finite number of intrinsic Josephson junctions|Myung-Ho Bae,Jae-Hyun Choi,Hu-Jong Lee###
(136238, 136238)
 In the dynamic vortexstate in a sufficiently high magnetic field and for a high bias current,splitting of a single Josephson vortex-flow branch into multiple sub-brancheswas observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Collective Josephson vortex dynamics in a finite number of intrinsic Josephson junctions|Myung-Ho Bae,Jae-Hyun Choi,Hu-Jong Lee###
(136321, 136321)
 Detailed examination of the sub-branches for varying H fieldreveals that sub-branches represent the different modes of the Josephson-vortexlattice along the c<missing VAR> axis, with varied configuration from a triangular to arectangular lattices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Asymmetric $d$-wave superconducting topological insulator in proximity with a magnetic order|M. Khezerlou,H. Goudarzi###
(136473, 136473)
 In the framework of the Dirac-Bogoliubov-de Gennes formalism, we investigatethe transport properties in the surface of a 3-dimensional topologicalinsulator-based hybrid structure, where the ferromagnetic and superconductingorders are simultaneously induced to the surface states via the proximityeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N/F/FS
###Asymmetric $d$-wave superconducting topological insulator in proximity with a magnetic order|M. Khezerlou,H. Goudarzi###
(136693, 136698)
 We propose a topological insulatorN/F/FS junction and proceed to clarify the role of d<missing VAR>-wave asymmetry pairingin the resulting subgap and overgap tunneling conductance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Asymmetric $d$-wave superconducting topological insulator in proximity with a magnetic order|M. Khezerlou,H. Goudarzi###
(136755, 136755)
 The perpendicularcomponent of magnetizations in F and FS regions can be at the parallel andantiparallel configurations leading to capture the experimentally importantmagnetoresistance (MR) of junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Asymmetric $d$-wave superconducting topological insulator in proximity with a magnetic order|M. Khezerlou,H. Goudarzi###
(136759, 136760)
 The perpendicularcomponent of magnetizations in F and FS regions can be at the parallel andantiparallel configurations leading to capture the experimentally importantmagnetoresistance (MR) of junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Asymmetric $d$-wave superconducting topological insulator in proximity with a magnetic order|M. Khezerlou,H. Goudarzi###
(136841, 136842)
 It is found that the zero-bias conductanceis strongly sensitive to the magnitude of magnetization in FS region m<missing VAR>zfsand orbital rotated angle alpha of superconductor gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba2LaNbO6
###Anomalous bias dependence of tunnel magnetoresistance in a magnetic tunnel junction|Soumik Mukhopadhyay,I. Das,S. P. Pai,P. Raychaudhuri###
(136991, 136996)
 We have fabricated a spin-polarized tunneling device based on half metallicmanganites incorporating Ba2LaNbO6 as insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Fe)
###All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode|Peifeng Chen,Juergen Moser,Philipp Kotissek,Janusz Sadowski,Marcus Zenger,Dieter Weiss,Werner Wegscheider###
(137476, 137478)
 The injection of spin-polarized electrons in asemiconductor is achieved by driving a current from a ferromagnetic injector(Fe), into a bulk semiconductor (n<missing VAR>-GaAs) via schottky contact.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode|Peifeng Chen,Juergen Moser,Philipp Kotissek,Janusz Sadowski,Marcus Zenger,Dieter Weiss,Werner Wegscheider###
(137493, 137493)
 The injection of spin-polarized electrons in asemiconductor is achieved by driving a current from a ferromagnetic injector(Fe), into a bulk semiconductor (n<missing VAR>-GaAs) via schottky contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode|Peifeng Chen,Juergen Moser,Philipp Kotissek,Janusz Sadowski,Marcus Zenger,Dieter Weiss,Werner Wegscheider###
(137522, 137522)
 For detection,a diluted magnetic semiconductor (p<missing VAR>-GaMnAs) layer is used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137613, 137615)
 We have measured the inverse spin Hall effect (ISHE) in textitn<missing VAR>-Ge at roomtemperature.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137624, 137624)
 We have measured the inverse spin Hall effect (ISHE) in textitn<missing VAR>-Ge at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137659, 137664)
 The spin current in germanium was generated by spin pumping from aCoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatchissue.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ge
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137704, 137704)
 A clear electromotive force was measured in Ge at the ferromagneticresonance of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137717, 137719)
 A clear electromotive force was measured in Ge at the ferromagneticresonance of CoFeB.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137764, 137765)
 The same study was then carried out on several testsamples, in particular we have investigated the influence of the MgO tunnelbarrier and sample annealing on the ISHE<missing VAR> signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137782, 137784)
 The same study was then carried out on several testsamples, in particular we have investigated the influence of the MgO tunnelbarrier and sample annealing on the ISHE<missing VAR> signal.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137797, 137802)
 First, the reference CoFeB/MgObilayer grown on SiO2 exhibits a clear electromotive force due toanisotropic magnetoresistance and anomalous Hall effect which is dominated byan asymmetric contribution with respect to the resonance field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SiO2
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137811, 137813)
 First, the reference CoFeB/MgObilayer grown on SiO2 exhibits a clear electromotive force due toanisotropic magnetoresistance and anomalous Hall effect which is dominated byan asymmetric contribution with respect to the resonance field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137881, 137882)
 We also foundthat the MgO tunnel barrier is essential to observe ISHE<missing VAR> in Ge and that sampleannealing systematically lead to an increase of the signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137896, 137898)
 We also foundthat the MgO tunnel barrier is essential to observe ISHE<missing VAR> in Ge and that sampleannealing systematically lead to an increase of the signal.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137903, 137903)
 We also foundthat the MgO tunnel barrier is essential to observe ISHE<missing VAR> in Ge and that sampleannealing systematically lead to an increase of the signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137967, 137968)
 We propose atheoretical model based on the presence of localized states at the interfacebetween the MgO tunnel barrier and Ge to account for these observations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(137976, 137976)
 We propose atheoretical model based on the presence of localized states at the interfacebetween the MgO tunnel barrier and Ge to account for these observations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(138015, 138017)
Finally, all of our results are fully consistent with the observation of ISHE<missing VAR>in heavily doped n<missing VAR>-Ge and we could estimate the spin Hall angle at roomtemperature to be approx0.001.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(138029, 138029)
Finally, all of our results are fully consistent with the observation of ISHE<missing VAR>in heavily doped n<missing VAR>-Ge and we could estimate the spin Hall angle at roomtemperature to be approx0.001.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions|J. Z. Sun,D. W. Abraham,K. Roche,S. S. P. Parkin###
(138495, 138495)
 Thin film trilayer junction of La%0.67Sr0.33MnO3 - SrTiO3 -La0.67Sr0.33MnO3 shows a factor of 9.7 change in resistance, in amagnetic field around 100 Oe at 14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 9.7, 'change', 0],[51.0, 100, 'Oe', 0],[54.0, 14, 'K', 0]

Sr0.33MnO3
###Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions|J. Z. Sun,D. W. Abraham,K. Roche,S. S. P. Parkin###
(138498, 138502)
 Thin film trilayer junction of La%0.67Sr0.33MnO3 - SrTiO3 -La0.67Sr0.33MnO3 shows a factor of 9.7 change in resistance, in amagnetic field around 100 Oe at 14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6928406466512702,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23094688221709006,0,0,0,0,0,0,0,0,0,0,0,0,0.07621247113163973,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 9.7, 'change', 0],[44.0, 100, 'Oe', 0],[47.0, 14, 'K', 0]

SrTiO3
###Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions|J. Z. Sun,D. W. Abraham,K. Roche,S. S. P. Parkin###
(138506, 138509)
 Thin film trilayer junction of La%0.67Sr0.33MnO3 - SrTiO3 -La0.67Sr0.33MnO3 shows a factor of 9.7 change in resistance, in amagnetic field around 100 Oe at 14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 9.7, 'change', 0],[37.0, 100, 'Oe', 0],[40.0, 14, 'K', 0]

La0.67Sr0.33MnO3
###Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions|J. Z. Sun,D. W. Abraham,K. Roche,S. S. P. Parkin###
(138514, 138520)
 Thin film trilayer junction of La%0.67Sr0.33MnO3 - SrTiO3 -La0.67Sr0.33MnO3 shows a factor of 9.7 change in resistance, in amagnetic field around 100 Oe at 14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 9.7, 'change', 0],[26.0, 100, 'Oe', 0],[29.0, 14, 'K', 0]

Mn2Au
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(138691, 138693)
Giant magnetoresistance in antiferromagnetic Mn2Au-based tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 1000, '%', 4]

F
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(138723, 138723)
 Recent studies on the electrical switching of tetragonal antiferromagnet(AFM) via Ne<missing VAR>el spin-orbit torque have paved the way for the economic use ofantiferromagnetic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1000, '%', 3]

N
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(138729, 138729)
 Recent studies on the electrical switching of tetragonal antiferromagnet(AFM) via Ne<missing VAR>el spin-orbit torque have paved the way for the economic use ofantiferromagnetic materials.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1000, '%', 3]

F
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(138830, 138830)
 The most difficult obstacle that presently limitsthe application of antiferromagnetic materials in spintronics, especially inmemory storage applications, could be the small and fragile magnetoresistance(MR) in the AFM<missing VAR>-based nanostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1000, '%', 2]

In
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(138838, 138838)
 In this study, we investigated the spintransports in Mn2Au-based tunnel junctions based onthe first-principlescattering theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1000, '%', 1]

Mn2Au
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(138858, 138860)
 In this study, we investigated the spintransports in Mn2Au-based tunnel junctions based onthe first-principlescattering theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1000, '%', 1]

Fe/MgO/Ag/Mn2Au/Ta
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(138903, 138914)
 Giant M<missing VAR>Rs more than 1000% are predicted in someFe/MgO/Ag/Mn2Au/Ta junctions that are about the same order as that in anMgO-based ferromagnetic tunnel junction with same barrier thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[12.0, 1000, '%', 0]

MgO
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(138939, 138940)
 Giant M<missing VAR>Rs more than 1000% are predicted in someFe/MgO/Ag/Mn2Au/Ta junctions that are about the same order as that in anMgO-based ferromagnetic tunnel junction with same barrier thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1000, '%', 0]

Mn2Au
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(139025, 139027)
 Theinterplay of the spin filtering effect, the quantum well resonant states, andthe interfacial resonant states could be responsible for the unusual giant androbust M<missing VAR>Rs observed in these Mn2Au-based junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 1000, '%', 1]

SrRuO3
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139056, 139059)
Anisotropy and Current Control of Magnetization in SrRuO3 SrTiO3 Heterostructures for Spin-Memristors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139061, 139064)
Anisotropy and Current Control of Magnetization in SrRuO3 SrTiO3 Heterostructures for Spin-Memristors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139153, 139153)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139164, 139167)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139170, 139170)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139172, 139172)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139179, 139182)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139185, 139185)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139187, 139187)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139245, 139245)
 Utilizing the crystal orientation, magnetic anisotropy in suchsimple heterostructures can be tuned to either exhibit a perfect or slightlytilted PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pt)
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139293, 139295)
 Here, we investigate current-induced magnetization modulation insuch tailored ferromagnetic layers with a material with strong spin-orbitcoupling (Pt), exploiting the spin Hall effect.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139330, 139330)
 We find significant differencesin the magnetic anisotropy between the SR<missing VAR>O/ST<missing VAR>O heterostructures, as manifestedin the first and second harmonic magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/S
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139332, 139334)
 We find significant differencesin the magnetic anisotropy between the SR<missing VAR>O/ST<missing VAR>O heterostructures, as manifestedin the first and second harmonic magnetoresistance measurements.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139336, 139336)
 We find significant differencesin the magnetic anisotropy between the SR<missing VAR>O/ST<missing VAR>O heterostructures, as manifestedin the first and second harmonic magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139398, 139398)
Current-induced magnetization switching can be realized with spin-orbittorques, but for systems with perfect PM<missing VAR>A this switching is probabilistic as aresult of the high symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139434, 139434)
 Slight tilting of the PM<missing VAR>A can break this symmetryand allow the realization of deterministic switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139570, 139571)
 Non-volatile states can be writtenthrough SOT<missing VAR> by applying an in-plane current, and read out as a tunnel currentby applying a small out-of-plane current.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139632, 139632)
 Depending on the anisotropy of theSR<missing VAR>O layer, the writing mechanism is either deterministic or probabilisticallowing for different functionalities to emerge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(139634, 139634)
 Depending on the anisotropy of theSR<missing VAR>O layer, the writing mechanism is either deterministic or probabilisticallowing for different functionalities to emerge.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(139733, 139734)
Gap like structure in a nonsuperconducting layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 10, 'mK', 1]

Sr4-xCu2CO3O8
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(139736, 139746)
Gap like structure in a nonsuperconducting layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8 single crystal.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[53.0, 10, 'mK', 1]

I
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(139779, 139779)
 The magnetic field and temperature dependence of the in-plane tunnelingconductance d<missing VAR>I/d<missing VAR>V(V) in high-quality nonsuperconducting (down to 10 mK)layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8delta singlecrystals has been investigated using break junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 10, 'mK', 0]

V(V)
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(139782, 139785)
 The magnetic field and temperature dependence of the in-plane tunnelingconductance d<missing VAR>I/d<missing VAR>V(V) in high-quality nonsuperconducting (down to 10 mK)layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8delta singlecrystals has been investigated using break junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 10, 'mK', 0]

Bi2
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(139807, 139808)
 The magnetic field and temperature dependence of the in-plane tunnelingconductance d<missing VAR>I/d<missing VAR>V(V) in high-quality nonsuperconducting (down to 10 mK)layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8delta singlecrystals has been investigated using break junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 10, 'mK', 0]

Sr4-xCu2CO3O8
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(139810, 139820)
 The magnetic field and temperature dependence of the in-plane tunnelingconductance d<missing VAR>I/d<missing VAR>V(V) in high-quality nonsuperconducting (down to 10 mK)layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8delta singlecrystals has been investigated using break junctions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 10, 'mK', 0]

H
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(139861, 139861)
 Combining measurements ofthe in-plane magnetoresistivity rhoab(T<missing VAR>,H) and the magnetotunneling, wepresent evidence for the existence of a small pseudogap in anonsuperconducting cuprate, without local incoherent pairs or any correlationphenomena associated with superconductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 10, 'mK', 1]

GaAs/AlGaAs
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140049, 140054)
 We study the magnetoresistance of an ultrahigh mobility GaAs/AlGaAstwo-dimensional electron sample in a weak magnetic field under low-frequency (f<missing VAR>< 20 GHz) microwave (M<missing VAR>W) irradiation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[32.0, 20, 'GHz', 0],[108.0, 4, 'GHz', 2]

W
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140093, 140093)
 We study the magnetoresistance of an ultrahigh mobility GaAs/AlGaAstwo-dimensional electron sample in a weak magnetic field under low-frequency (f<missing VAR>< 20 GHz) microwave (M<missing VAR>W) irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 20, 'GHz', 0],[69.0, 4, 'GHz', 2]

W
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140110, 140110)
 We observe that with decreasing M<missing VAR>Wfrequency, microwave induced resistance oscillations (MIRO) damp andmulti-photon processes become dominant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 20, 'GHz', 1],[52.0, 4, 'GHz', 1]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140128, 140128)
 We observe that with decreasing M<missing VAR>Wfrequency, microwave induced resistance oscillations (MIRO) damp andmulti-photon processes become dominant.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 20, 'GHz', 1],[34.0, 4, 'GHz', 1]

At
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140147, 140147)
 At very low M<missing VAR>W frequency (f<missing VAR> < 4 GHz),MIRO disappears gradually and a new SdH-like oscillation develops.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 20, 'GHz', 2],[15.0, 4, 'GHz', 0]

W
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140154, 140154)
 At very low M<missing VAR>W frequency (f<missing VAR> < 4 GHz),MIRO disappears gradually and a new SdH-like oscillation develops.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 20, 'GHz', 2],[8.0, 4, 'GHz', 0]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140170, 140170)
 At very low M<missing VAR>W frequency (f<missing VAR> < 4 GHz),MIRO disappears gradually and a new SdH-like oscillation develops.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 20, 'GHz', 2],[8.0, 4, 'GHz', 0]

H
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140183, 140183)
 At very low M<missing VAR>W frequency (f<missing VAR> < 4 GHz),MIRO disappears gradually and a new SdH-like oscillation develops.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 20, 'GHz', 2],[21.0, 4, 'GHz', 0]

HI
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140229, 140230)
 The analysisindicates that the new oscillation may originate from alternating Hall-fieldinduced resistance oscillations (ac-HIR<missing VAR>O), or can be viewed as a multi-photonprocess of MIRO in low M<missing VAR>W frequency limit.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 20, 'GHz', 3],[67.0, 4, 'GHz', 1]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140232, 140232)
 The analysisindicates that the new oscillation may originate from alternating Hall-fieldinduced resistance oscillations (ac-HIR<missing VAR>O), or can be viewed as a multi-photonprocess of MIRO in low M<missing VAR>W frequency limit.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 20, 'GHz', 3],[70.0, 4, 'GHz', 1]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140260, 140260)
 The analysisindicates that the new oscillation may originate from alternating Hall-fieldinduced resistance oscillations (ac-HIR<missing VAR>O), or can be viewed as a multi-photonprocess of MIRO in low M<missing VAR>W frequency limit.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 20, 'GHz', 3],[98.0, 4, 'GHz', 1]

W
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140267, 140267)
 The analysisindicates that the new oscillation may originate from alternating Hall-fieldinduced resistance oscillations (ac-HIR<missing VAR>O), or can be viewed as a multi-photonprocess of MIRO in low M<missing VAR>W frequency limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 20, 'GHz', 3],[105.0, 4, 'GHz', 1]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140294, 140294)
 Our findings bridge thenon-equilibrium states of MIRO and HIR<missing VAR>O, which can be brought into a frame ofquantum tunneling junction model.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 20, 'GHz', 4],[132.0, 4, 'GHz', 2]

HI
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140298, 140299)
 Our findings bridge thenon-equilibrium states of MIRO and HIR<missing VAR>O, which can be brought into a frame ofquantum tunneling junction model.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 20, 'GHz', 4],[136.0, 4, 'GHz', 2]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(140301, 140301)
 Our findings bridge thenon-equilibrium states of MIRO and HIR<missing VAR>O, which can be brought into a frame ofquantum tunneling junction model.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 20, 'GHz', 4],[139.0, 4, 'GHz', 2]

B
###Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation|Hossein Pourmeidani,Punyashloka Debashis,Zhihong Chen,Ronald F. DeMara,Ramtin Zand###
(140777, 140777)
 Using aMagnetoresistive Random Access Memory (MRAM) probabilistic device (p<missing VAR>-bit) asthe basis of neuronal structures in Deep Belief Networks (D<missing VAR>BNs), the impact ofreducing the Magnetic Tunnel Junctions<missing VAR> (MTJs) energy barrier is assessed andoptimized for the resulting stochasticity present in the learning system.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2.0, 'kT', 2],[155.0, 0.5, 'kT', 2]

B
###Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation|Hossein Pourmeidani,Punyashloka Debashis,Zhihong Chen,Ronald F. DeMara,Ramtin Zand###
(140859, 140859)
 Thiscan mitigate the process variation sensitivity of stochastic D<missing VAR>BNs whichencounter a sharp drop-off when energy barriers exceed near-zero kT.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2.0, 'kT', 1],[73.0, 0.5, 'kT', 1]

As
###Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation|Hossein Pourmeidani,Punyashloka Debashis,Zhihong Chen,Ronald F. DeMara,Ramtin Zand###
(140891, 140891)
 Asevaluated for the M<missing VAR>NIST<missing VAR> dataset for energy barriers at near-zero kT to 2.0 kTin increments of 0.5 kT, it is shown that the stability factor changes by 5orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2.0, 'kT', 0],[41.0, 0.5, 'kT', 0]

NIS
###Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation|Hossein Pourmeidani,Punyashloka Debashis,Zhihong Chen,Ronald F. DeMara,Ramtin Zand###
(140901, 140903)
 Asevaluated for the M<missing VAR>NIST<missing VAR> dataset for energy barriers at near-zero kT to 2.0 kTin increments of 0.5 kT, it is shown that the stability factor changes by 5orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2.0, 'kT', 0],[29.0, 0.5, 'kT', 0]

In
###Electric-Field-Controlled Antiferromagnetic Spintronic Devices|Han Yan,Zexin Feng,Peixin Qin,Xiaorong Zhou,Huixin Guo,Xiaoning Wang,Hongyu Chen,Xin Zhang,Haojiang Wu,Chengbao Jiang,Zhiqi Liu###
(141034, 141034)
 In recent years, the field of antiferromagnetic spintronics has beensubstantially advanced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electric-Field-Controlled Antiferromagnetic Spintronic Devices|Han Yan,Zexin Feng,Peixin Qin,Xiaorong Zhou,Huixin Guo,Xiaoning Wang,Hongyu Chen,Xin Zhang,Haojiang Wu,Chengbao Jiang,Zhiqi Liu###
(141099, 141099)
 Inthis article, cutting-edge research, including electric-field modulation ofantiferromagnetic spintronic devices using strain, ionic liquids, dielectricmaterials, and electrochemical ionic migration, are comprehensively reviewed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electric-Field-Controlled Antiferromagnetic Spintronic Devices|Han Yan,Zexin Feng,Peixin Qin,Xiaorong Zhou,Huixin Guo,Xiaoning Wang,Hongyu Chen,Xin Zhang,Haojiang Wu,Chengbao Jiang,Zhiqi Liu###
(141238, 141238)
 In conclusion, we envision thepossibility of realizing high-quality room-temperature antiferromagnetic tunneljunctions, antiferromagnetic spin logic devices, and artificialantiferromagnetic neurons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu/Co/Cu
###Current-induced switching in single ferromagnetic layer nanopillar junctions|Barbaros Oezyilmaz,Andrew D. Kent###
(141377, 141381)
 Current induced magnetization dynamics in asymmetric Cu/Co/Cu single magneticlayer nanopillars has been studied experimentally at room temperature and inlow magnetic fields applied perpendicular to the thin film plane.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[141.0, 0.5, '%', 3],[150.0, 5, 'greater', 3]

In
###Current-induced switching in single ferromagnetic layer nanopillar junctions|Barbaros Oezyilmaz,Andrew D. Kent###
(141432, 141432)
 In sub-100 nmjunctions produced using a nanostencil process a bistable state with twodistinct resistance values is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.5, '%', 2],[99.0, 5, 'greater', 2]

Fe/GaAs
###Tunnelling anisotropic magnetoresistance of Fe/GaAs/Ag(001) junctions from first principles: Effect of hybridized interface resonances|Rudolf Sykora,Ilja Turek###
(141610, 141613)
Tunnelling anisotropic magnetoresistance of Fe/GaAs/Ag(001) junctions from first principles Effect of hybridized interface resonances.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs
###Tunnelling anisotropic magnetoresistance of Fe/GaAs/Ag(001) junctions from first principles: Effect of hybridized interface resonances|Rudolf Sykora,Ilja Turek###
(141653, 141656)
 Results of first-principles calculations of the Fe/GaAs/Ag(001) epitaxialtunnel junctions reveal that hybridization of interface resonances formed atboth interfaces can enhance the tunnelling anisotropic magnetoresistance (TAMR)of the systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ni
###Tunnel magnetoresistance of polymeric chains|Kamil Walczak###
(141973, 141973)
 Coherent spin-dependent electronic transport is investigated in a molecularjunction made of polymeric chain attached to ferromagnetic electrodes (Ni andCo, respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tunnel magnetoresistance of polymeric chains|Kamil Walczak###
(141978, 141978)
 Coherent spin-dependent electronic transport is investigated in a molecularjunction made of polymeric chain attached to ferromagnetic electrodes (Ni andCo, respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Tunnel Magnetoresistance of a Single-Molecule Junction|Alireza Saffarzadeh###
(142192, 142192)
 Based on the non-equilibrium Greens<missing VAR> function (NEGF) technique and theLandauer-Bu<missing VAR>ttiker theory, the possibility of a molecular spin-electronicdevice, which consists of a single C60 molecule attached to twoferromagnetic electrodes with finite cross sections, is investigated.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 60, '%', 2]

F
###Tunnel Magnetoresistance of a Single-Molecule Junction|Alireza Saffarzadeh###
(142195, 142195)
 Based on the non-equilibrium Greens<missing VAR> function (NEGF) technique and theLandauer-Bu<missing VAR>ttiker theory, the possibility of a molecular spin-electronicdevice, which consists of a single C60 molecule attached to twoferromagnetic electrodes with finite cross sections, is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 60, '%', 2]

B
###Tunnel Magnetoresistance of a Single-Molecule Junction|Alireza Saffarzadeh###
(142207, 142207)
 Based on the non-equilibrium Greens<missing VAR> function (NEGF) technique and theLandauer-Bu<missing VAR>ttiker theory, the possibility of a molecular spin-electronicdevice, which consists of a single C60 molecule attached to twoferromagnetic electrodes with finite cross sections, is investigated.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 60, '%', 2]

C60
###Tunnel Magnetoresistance of a Single-Molecule Junction|Alireza Saffarzadeh###
(142242, 142243)
 Based on the non-equilibrium Greens<missing VAR> function (NEGF) technique and theLandauer-Bu<missing VAR>ttiker theory, the possibility of a molecular spin-electronicdevice, which consists of a single C60 molecule attached to twoferromagnetic electrodes with finite cross sections, is investigated.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 60, '%', 2]

La0.7Sr0.3MnO3
###The role of magnetic anisotropy in spin filter junctions|R. V. Chopdekar,B. B. Nelson-Cheeseman,M. Liberati,E. Arenholz,Y. Suzuki###
(142626, 142632)
 We have demonstrated spin filtering behavior inLa0.7Sr0.3MnO3/chromite/Fe3O4 junctions without nonmagnetic spacer layers wherethe interface anisotropy plays a significant role in determining transportbehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4
###The role of magnetic anisotropy in spin filter junctions|R. V. Chopdekar,B. B. Nelson-Cheeseman,M. Liberati,E. Arenholz,Y. Suzuki###
(142636, 142639)
 We have demonstrated spin filtering behavior inLa0.7Sr0.3MnO3/chromite/Fe3O4 junctions without nonmagnetic spacer layers wherethe interface anisotropy plays a significant role in determining transportbehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnCr2O4
###The role of magnetic anisotropy in spin filter junctions|R. V. Chopdekar,B. B. Nelson-Cheeseman,M. Liberati,E. Arenholz,Y. Suzuki###
(142751, 142755)
 Detailed studies of chemical and magnetic structure at the interfacesindicate that abrupt changes in magnetic anisotropy across thenon-isostructural interface is the cause of the significant suppression ofjunction magnetoresistance in junctions with MnCr2O4 barrier layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(142893, 142893)
 The electronic structure is obtained withindensity functional theory as implemented in the full-potential linearizedaugmented plane-wave (FL<missing VAR>APW) method and mapped to a tight-binding liketransport Hamiltonian via non-collinear Wannier functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2.5, 'to', 3]

W
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(142897, 142897)
 The electronic structure is obtained withindensity functional theory as implemented in the full-potential linearizedaugmented plane-wave (FL<missing VAR>APW) method and mapped to a tight-binding liketransport Hamiltonian via non-collinear Wannier functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 2.5, 'to', 3]

As
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(142966, 142966)
As a first application we study the conductance between two ferromagnetic Comonowires terminated by single Mn apex atoms as a function of Mn-Mn separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2.5, 'to', 1]

Co
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(142988, 142988)
As a first application we study the conductance between two ferromagnetic Comonowires terminated by single Mn apex atoms as a function of Mn-Mn separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2.5, 'to', 1]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(142999, 142999)
As a first application we study the conductance between two ferromagnetic Comonowires terminated by single Mn apex atoms as a function of Mn-Mn separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2.5, 'to', 1]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143013, 143013)
As a first application we study the conductance between two ferromagnetic Comonowires terminated by single Mn apex atoms as a function of Mn-Mn separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2.5, 'to', 1]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143015, 143015)
As a first application we study the conductance between two ferromagnetic Comonowires terminated by single Mn apex atoms as a function of Mn-Mn separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2.5, 'to', 1]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143027, 143027)
We vary the Mn-Mn separation from the contact (about 2.5 to 5 AA) to the fartunneling regime (5 to 10 AA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2.5, 'to', 0]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143029, 143029)
We vary the Mn-Mn separation from the contact (about 2.5 to 5 AA) to the fartunneling regime (5 to 10 AA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2.5, 'to', 0]

Co
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143082, 143082)
 The magnetization direction of the Coelectrodes is chosen either in parallel or antiparallel alignment and we allowfor different spin configurations of the two Mn spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2.5, 'to', 1]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143124, 143124)
 The magnetization direction of the Coelectrodes is chosen either in parallel or antiparallel alignment and we allowfor different spin configurations of the two Mn spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 2.5, 'to', 1]

In
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143129, 143129)
 In the tunneling andinto the contact regime the conductance is dominated by s-dz2-states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2.5, 'to', 2]

In
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143166, 143166)
In the close contact regime (below 3.5 AA) there is an additionalcontribution for a parallel magnetization alignment from the d<missing VAR>xz- andd<missing VAR>yz-states which give rise to an increase of the magnetoresistance as itis absent for antiparallel magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2.5, 'to', 3]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143264, 143264)
 If we allow the Mn spins to relax anon-collinear spin state is formed close to contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 2.5, 'to', 4]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143332, 143332)
 We demonstrate that thetransition from a collinear to such a non-collinear spin structure as the twoMn atoms approach leaves a characteristic fingerprint in the distance-dependentconductance and magnetoresistance of the junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 2.5, 'to', 5]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143423, 143423)
 We explain the effect of thenon-collinear spin state on the conductance based on the spin-dependenthybridization between the d<missing VAR>xz,yz-states of the Mn spins and their couplingto the Co electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 2.5, 'to', 6]

Co
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(143438, 143438)
 We explain the effect of thenon-collinear spin state on the conductance based on the spin-dependenthybridization between the d<missing VAR>xz,yz-states of the Mn spins and their couplingto the Co electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 2.5, 'to', 6]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143483, 143483)
 Transport and magnetic properties of LSMO manganite thin films and bicrystaljunctions were investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0.3, 'persentage', 2],[287.0, 0, 'to', 4],[288.0, 25, 'degrees', 4]

S
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143515, 143515)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.3, 'persentage', 1],[255.0, 0, 'to', 3],[256.0, 25, 'degrees', 3]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143517, 143517)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0.3, 'persentage', 1],[253.0, 0, 'to', 3],[254.0, 25, 'degrees', 3]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143523, 143523)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.3, 'persentage', 1],[247.0, 0, 'to', 3],[248.0, 25, 'degrees', 3]

N
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143526, 143526)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.3, 'persentage', 1],[244.0, 0, 'to', 3],[245.0, 25, 'degrees', 3]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143528, 143528)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.3, 'persentage', 1],[242.0, 0, 'to', 3],[243.0, 25, 'degrees', 3]

S
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143533, 143533)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.3, 'persentage', 1],[237.0, 0, 'to', 3],[238.0, 25, 'degrees', 3]

N
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143597, 143597)
 Compare with cubicsubstrates a small (about 0.3 persentage), the anisotropy of the orthorhombicNG<missing VAR>O substrate leads to a uniaxial anisotropy of the magnetic properties of thefilms in the plane of the substrate.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.3, 'persentage', 0],[173.0, 0, 'to', 2],[174.0, 25, 'degrees', 2]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143599, 143599)
 Compare with cubicsubstrates a small (about 0.3 persentage), the anisotropy of the orthorhombicNG<missing VAR>O substrate leads to a uniaxial anisotropy of the magnetic properties of thefilms in the plane of the substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.3, 'persentage', 0],[171.0, 0, 'to', 2],[172.0, 25, 'degrees', 2]

B
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143687, 143687)
 Samples with different tilt ofcrystallographic basal planes of manganite as well as bicrystal junctions withrotation of the crystallographic axes (R<missing VAR>B - junction) and with tilting of basalplanes (T<missing VAR>B - junction) were investigated.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.3, 'persentage', 1],[83.0, 0, 'to', 1],[84.0, 25, 'degrees', 1]

B
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143709, 143709)
 Samples with different tilt ofcrystallographic basal planes of manganite as well as bicrystal junctions withrotation of the crystallographic axes (R<missing VAR>B - junction) and with tilting of basalplanes (T<missing VAR>B - junction) were investigated.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.3, 'persentage', 1],[61.0, 0, 'to', 1],[62.0, 25, 'degrees', 1]

N
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143733, 143733)
 It was found that on vicinal NG<missing VAR>Osubstrates the value of magnetic anisotropy could be varied by changing thesubstrate inclination angle from 0 to 25 degrees.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.3, 'persentage', 2],[37.0, 0, 'to', 0],[38.0, 25, 'degrees', 0]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143735, 143735)
 It was found that on vicinal NG<missing VAR>Osubstrates the value of magnetic anisotropy could be varied by changing thesubstrate inclination angle from 0 to 25 degrees.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0.3, 'persentage', 2],[35.0, 0, 'to', 0],[36.0, 25, 'degrees', 0]

B
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143824, 143824)
 Measurement of magneticanisotropy of manganite bicrystal junction demonstrated the presence of twoferromagnetically ordered spin subsystems for both types of bicrystalboundaries R<missing VAR>B and T<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 0.3, 'persentage', 3],[54.0, 0, 'to', 1],[53.0, 25, 'degrees', 1]

B
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143829, 143829)
 Measurement of magneticanisotropy of manganite bicrystal junction demonstrated the presence of twoferromagnetically ordered spin subsystems for both types of bicrystalboundaries R<missing VAR>B and T<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 0.3, 'persentage', 3],[59.0, 0, 'to', 1],[58.0, 25, 'degrees', 1]

B
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143845, 143845)
 The magnitude of the magnetoresistance for T<missing VAR>B - junctionsincreased with decreasing temperature and with the misorientation angle evenmisorientation of easy axes in the parts of junction does not change.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 0.3, 'persentage', 4],[75.0, 0, 'to', 2],[74.0, 25, 'degrees', 2]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(143941, 143941)
 Analysisof the voltage dependencies of bicrystal junction conductivity show that thelow value of the magnetoresistance for the LSMO bicrystal junctions can becaused by two scattering mechanisms with the spin- flip of spin - polarizedcarriers due to the strong electron - electron interactions in a disorderedlayer at the bicrystal boundary at low temperatures and the spin-flip by antiferromagnetic magnons at high temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 0.3, 'persentage', 5],[171.0, 0, 'to', 3],[170.0, 25, 'degrees', 3]

FS
###Interface resistance in ferromagnet/superconductor junctions|A. A. Golubov###
(144188, 144189)
 The excessresistance of an FS contact due to the charge-imbalance in a superconductor iscalculated for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Fe3O4)
###Giant Magnetoresistance in an all-oxide spacerless junction|Mangala Prasad Singh,Baptiste Carvello,Laurent Ranno###
(144343, 144348)
 Both electrodes are highspin-polarization oxides magnetite (Fe3O4) and manganite (La0.7Sr0.3MnO3).
Featurization successful!
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, -5, '%', 5],[191.0, 55, 'K', 5]

(La0.7Sr0.3MnO3)
###Giant Magnetoresistance in an all-oxide spacerless junction|Mangala Prasad Singh,Baptiste Carvello,Laurent Ranno###
(144354, 144362)
 Both electrodes are highspin-polarization oxides magnetite (Fe3O4) and manganite (La0.7Sr0.3MnO3).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, -5, '%', 5],[177.0, 55, 'K', 5]

Fe3O4
###Giant Magnetoresistance in an all-oxide spacerless junction|Mangala Prasad Singh,Baptiste Carvello,Laurent Ranno###
(144497, 144500)
 the Fe3O4 layer has a negative spinpolarization at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, -5, '%', 1],[39.0, 55, 'K', 1]

Co/MgO/Co
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(144558, 144563)
Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeCo/MgO/FeCo
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(144567, 144574)
Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgO
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(144837, 144838)
 The Delta1 state decays much more slowlythan the other states within the MgO barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(144843, 144843)
 In the absence of scatteringwhich breaks the conservation of momentum parallel to the interfaces, theelectrons travelling perpendicular to the interfaces undergo total reflectionif the moments of the electrodes are anti-parallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(144997, 144997)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(145003, 145003)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(145010, 145011)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(145017, 145017)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(145020, 145021)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnSe
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(145026, 145027)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F1)
###Giant magnetoresistance in the junction of two ferromagnets on the surface of diffusive topological insulators|Katsuhisa Taguchi,Takehito Yokoyama,Yukio Tanaka###
(145100, 145103)
 We reveal the giant magnetoresistance induced by the spin-polarized currentin the ferromagnet (F1)/topological insulator (T<missing VAR>I)/ferromagnet (F2) junction,where two ferromagnets are deposited on the diffusive surface of the T<missing VAR>I.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Giant magnetoresistance in the junction of two ferromagnets on the surface of diffusive topological insulators|Katsuhisa Taguchi,Takehito Yokoyama,Yukio Tanaka###
(145111, 145111)
 We reveal the giant magnetoresistance induced by the spin-polarized currentin the ferromagnet (F1)/topological insulator (T<missing VAR>I)/ferromagnet (F2) junction,where two ferromagnets are deposited on the diffusive surface of the T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F2)
###Giant magnetoresistance in the junction of two ferromagnets on the surface of diffusive topological insulators|Katsuhisa Taguchi,Takehito Yokoyama,Yukio Tanaka###
(145116, 145119)
 We reveal the giant magnetoresistance induced by the spin-polarized currentin the ferromagnet (F1)/topological insulator (T<missing VAR>I)/ferromagnet (F2) junction,where two ferromagnets are deposited on the diffusive surface of the T<missing VAR>I.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Giant magnetoresistance in the junction of two ferromagnets on the surface of diffusive topological insulators|Katsuhisa Taguchi,Takehito Yokoyama,Yukio Tanaka###
(145148, 145148)
 We reveal the giant magnetoresistance induced by the spin-polarized currentin the ferromagnet (F1)/topological insulator (T<missing VAR>I)/ferromagnet (F2) junction,where two ferromagnets are deposited on the diffusive surface of the T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Giant magnetoresistance in the junction of two ferromagnets on the surface of diffusive topological insulators|Katsuhisa Taguchi,Takehito Yokoyama,Yukio Tanaka###
(145260, 145260)
 The property is intuitively understood by the non-equilibriumspin-polarized current, which plays the role of an effective electrochemicalpotential on the surface of the T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Giant electroresistance and tunable magnetoelectricity in a multiferroic junction|Francesco Ricci,Alessio Filippetti,Vincenzo Fiorentini###
(145308, 145311)
 First-principles density functional calculations show that thetextrmSrRuO3/textrmPbTiO3/textrmSrRuO3 multiferroicjunction with asymmetric (RuO2/PbO and TiO2/SrO) interfaces has alarge ferroelectric depolarizing field, whose switching changes the interfacetransmission probabilities for tunneling electrons, leading toelectroresistance modulation over several orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbTiO3
###Giant electroresistance and tunable magnetoelectricity in a multiferroic junction|Francesco Ricci,Alessio Filippetti,Vincenzo Fiorentini###
(145314, 145317)
 First-principles density functional calculations show that thetextrmSrRuO3/textrmPbTiO3/textrmSrRuO3 multiferroicjunction with asymmetric (RuO2/PbO and TiO2/SrO) interfaces has alarge ferroelectric depolarizing field, whose switching changes the interfacetransmission probabilities for tunneling electrons, leading toelectroresistance modulation over several orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Giant electroresistance and tunable magnetoelectricity in a multiferroic junction|Francesco Ricci,Alessio Filippetti,Vincenzo Fiorentini###
(145320, 145323)
 First-principles density functional calculations show that thetextrmSrRuO3/textrmPbTiO3/textrmSrRuO3 multiferroicjunction with asymmetric (RuO2/PbO and TiO2/SrO) interfaces has alarge ferroelectric depolarizing field, whose switching changes the interfacetransmission probabilities for tunneling electrons, leading toelectroresistance modulation over several orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RuO2/PbO
###Giant electroresistance and tunable magnetoelectricity in a multiferroic junction|Francesco Ricci,Alessio Filippetti,Vincenzo Fiorentini###
(145335, 145340)
 First-principles density functional calculations show that thetextrmSrRuO3/textrmPbTiO3/textrmSrRuO3 multiferroicjunction with asymmetric (RuO2/PbO and TiO2/SrO) interfaces has alarge ferroelectric depolarizing field, whose switching changes the interfacetransmission probabilities for tunneling electrons, leading toelectroresistance modulation over several orders of magnitude.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Giant electroresistance and tunable magnetoelectricity in a multiferroic junction|Francesco Ricci,Alessio Filippetti,Vincenzo Fiorentini###
(145349, 145349)
 First-principles density functional calculations show that thetextrmSrRuO3/textrmPbTiO3/textrmSrRuO3 multiferroicjunction with asymmetric (RuO2/PbO and TiO2/SrO) interfaces has alarge ferroelectric depolarizing field, whose switching changes the interfacetransmission probabilities for tunneling electrons, leading toelectroresistance modulation over several orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(145539, 145539)
 Using a simple quantum-mechanical model, we explore a tunneling anisotropicmagnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FT<missing VAR>Js) with aferromagnetic electrode and a ferroelectric barrier layer, which spontaneouspolarization gives rise to the Rashba and Dresselhaus spin-orbit coupling(SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(145592, 145596)
 Using a simple quantum-mechanical model, we explore a tunneling anisotropicmagnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FT<missing VAR>Js) with aferromagnetic electrode and a ferroelectric barrier layer, which spontaneouspolarization gives rise to the Rashba and Dresselhaus spin-orbit coupling(SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(145633, 145633)
 For asymmetric FT<missing VAR>Js, which electrodes have differentwork functions, the built-in electric field affects the SOC parameters andleads to TAMR dependent on ferroelectric polarization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(145666, 145668)
 For asymmetric FT<missing VAR>Js, which electrodes have differentwork functions, the built-in electric field affects the SOC parameters andleads to TAMR dependent on ferroelectric polarization direction.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(145697, 145699)
 The SOC changewith polarization switching affects tunneling conductance, revealing a newmechanism of tunneling electroresistance (TER).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(145752, 145752)
 These results demonstrate newfunctionalities of FT<missing VAR>Js which can be explored experimentally and used inelectronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(NbSe2)
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(145948, 145952)
 Here, we show thatatomically-thin niobium diselenide (NbSe2) intercalated with dilute cobaltatoms spontaneously displays ferromagnetism below the superconductingtransition temperature (Tc).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 1950, 's', 1]

Co
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(146035, 146035)
 We elucidate the origin of this phase byconstructing a magnetic tunnel junction that consists of cobalt andcobalt-doped niobium diselenide (Co-NbSe2) as the two ferromagneticelectrodes, with an ultra-thin boron nitride as the tunnelling barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1950, 's', 2]

Se2
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(146038, 146039)
 We elucidate the origin of this phase byconstructing a magnetic tunnel junction that consists of cobalt andcobalt-doped niobium diselenide (Co-NbSe2) as the two ferromagneticelectrodes, with an ultra-thin boron nitride as the tunnelling barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1950, 's', 2]

At
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(146075, 146075)
 At atemperature well below Tc, the tunnelling magnetoresistance shows a bistablestate, suggesting a ferromagnetic order in Co-NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 1950, 's', 3]

Co
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(146116, 146116)
 At atemperature well below Tc, the tunnelling magnetoresistance shows a bistablestate, suggesting a ferromagnetic order in Co-NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 1950, 's', 3]

NbSe2
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(146118, 146120)
 At atemperature well below Tc, the tunnelling magnetoresistance shows a bistablestate, suggesting a ferromagnetic order in Co-NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 1950, 's', 3]

KKY
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(146130, 146132)
 We propose a R<missing VAR>KKYexchange coupling mechanism based on the spin-triplet superconducting orderparameter to mediate such ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 1950, 's', 4]

Tc
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(146231, 146231)
 Theobservation of Hanle precession signals show spin diffusion length up tomicrometres below Tc, demonstrating an intrinsic spin-triplet nature insuperconducting NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 1950, 's', 6]

NbSe2
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(146251, 146253)
 Theobservation of Hanle precession signals show spin diffusion length up tomicrometres below Tc, demonstrating an intrinsic spin-triplet nature insuperconducting NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 1950, 's', 6]

In
###Diagnosis and Location of Pinhole Defects in Tunnel Junctions using only Electrical Measurements|Zhongsheng Zhang,David A. Rabson###
(146740, 146740)
 In the development of the first generation of sensors and memory chips basedon spin-dependent tunneling through a thin trilayer, it has become clear thatpinhole defects can have a deleterious effect on magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7/La
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147035, 147043)
YBa2Cu3O7/LaX<missing VAR>MnO3 (X<missing VAR> Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MnO3
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147045, 147047)
YBa2Cu3O7/LaX<missing VAR>MnO3 (X<missing VAR> Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147052, 147052)
YBa2Cu3O7/LaX<missing VAR>MnO3 (X<missing VAR> Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147055, 147055)
YBa2Cu3O7/LaX<missing VAR>MnO3 (X<missing VAR> Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147147, 147147)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147153, 147159)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147171, 147171)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147180, 147180)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147182, 147184)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147189, 147189)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147193, 147193)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147255, 147255)
 The CMR phenomenon translates the magnetization loop into ahysteretic magnetoresistance loop.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147310, 147310)
 The latter facilitates a memoryfunctionality of such a junction with just a single CMR ferromagnetic layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147370, 147370)
 The CMRfacilitates a large read-out signal in a small applied field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(147415, 147415)
 We argue thatsuch a simple single layer CMR junction can operate as a memory cell both inthe superconducting state at cryogenic temperatures and in the normal state upto room temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnBi2Te4
###Detection of magnetic gap in the topological surface states of MnBi2Te4|Haoran Ji,Yanzhao Liu,He Wang,Jiawei Luo,Jiaheng Li,Hao Li,Yang Wu,Yong Xu,Jian Wang###
(147932, 147936)
Detection of magnetic gap in the topological surface states of MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 50, 'meV', 5]

MnBi2Te4
###Detection of magnetic gap in the topological surface states of MnBi2Te4|Haoran Ji,Yanzhao Liu,He Wang,Jiawei Luo,Jiaheng Li,Hao Li,Yang Wu,Yong Xu,Jian Wang###
(147950, 147954)
 Recently, intrinsic antiferromagnetic topological insulator MnBi2Te4 hasdrawn intense research interest and leads to plenty of significant progress inphysics and materials science by hosting quantum anomalous Hall effect, axioninsulator state, and other quantum phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 50, 'meV', 4]

MnBi2Te4
###Detection of magnetic gap in the topological surface states of MnBi2Te4|Haoran Ji,Yanzhao Liu,He Wang,Jiawei Luo,Jiaheng Li,Hao Li,Yang Wu,Yong Xu,Jian Wang###
(148080, 148084)
 An essential ingredient to realizethese quantum states is the magnetic gap in the topological surface statesinduced by the out-of-plane ferromagnetism on the surface of MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 50, 'meV', 3]

In
###Detection of magnetic gap in the topological surface states of MnBi2Te4|Haoran Ji,Yanzhao Liu,He Wang,Jiawei Luo,Jiaheng Li,Hao Li,Yang Wu,Yong Xu,Jian Wang###
(148144, 148144)
 In agreement with theoretical calculations, the gap size isaround 50 meV, which vanishes as the sample becomes paramagnetic withincreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 50, 'meV', 0]

MnBi2Te4
###Detection of magnetic gap in the topological surface states of MnBi2Te4|Haoran Ji,Yanzhao Liu,He Wang,Jiawei Luo,Jiaheng Li,Hao Li,Yang Wu,Yong Xu,Jian Wang###
(148314, 148318)
 Combining these results, themagnetism-induced gap in topological surface states of MnBi2Te4 is revealed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 50, 'meV', 3]

In
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(148361, 148361)
 In tunnel junctions between ferromagnets and heavy elements with strong spinorbit coupling the magnetoresistance is often dominated by tunnelinganisotropic magnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2, 'nd', 1],[121.0, 2, 'nd', 2],[142.0, 2, 'nd', 3]

C
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(148422, 148422)
 This makes conventional D<missing VAR>C spin injectiontechniques impractical for determining the spin relaxation time (taus).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2, 'nd', 2],[60.0, 2, 'nd', 1],[81.0, 2, 'nd', 2]

SI
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(148493, 148494)
Here, we show that this obstacle for measurements of taus<missing VAR> can be overcomeby 2nd harmonic spin-injection-magnetoresistance (SIMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 2, 'nd', 3],[11.0, 2, 'nd', 0],[9.0, 2, 'nd', 1]

In
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(148500, 148500)
 In the 2nd harmonicsignal the SIMR is comparable in magnitude to TAMR, thus enabling Hanle-inducedSIMR as a powerful tool to directly determine taus<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'nd', 4],[18.0, 2, 'nd', 1],[3.0, 2, 'nd', 0]

SI
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(148512, 148513)
 In the 2nd harmonicsignal the SIMR is comparable in magnitude to TAMR, thus enabling Hanle-inducedSIMR as a powerful tool to directly determine taus<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2, 'nd', 4],[30.0, 2, 'nd', 1],[9.0, 2, 'nd', 0]

SI
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(148542, 148543)
 In the 2nd harmonicsignal the SIMR is comparable in magnitude to TAMR, thus enabling Hanle-inducedSIMR as a powerful tool to directly determine taus<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 2, 'nd', 4],[60.0, 2, 'nd', 1],[39.0, 2, 'nd', 0]

Pt
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(148586, 148586)
 Using this approach wedetermined the spin relaxation time of Pt and Ta and their temperaturedependences.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 2, 'nd', 5],[104.0, 2, 'nd', 2],[83.0, 2, 'nd', 1]

Ta
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(148590, 148590)
 Using this approach wedetermined the spin relaxation time of Pt and Ta and their temperaturedependences.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 2, 'nd', 5],[108.0, 2, 'nd', 2],[87.0, 2, 'nd', 1]

Pt
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(148610, 148610)
 The spin relaxation in Pt seems to be governed by Elliott-Yafetmechanism due to a constant resistivity timesspin relaxation time productover a wide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 2, 'nd', 6],[128.0, 2, 'nd', 3],[107.0, 2, 'nd', 2]

La0.7Sr0.3MnO3
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(148828, 148834)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbZr0.2Ti0.8O3
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(148837, 148843)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Te0.3MnO3
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(148847, 148853)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/P
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(148859, 148861)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(148868, 148868)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(148916, 148916)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions|F. Godel,M. Venkata Kamalakar,B. Doudin,Y. Henry,D. Halley,J. -F. Dayen###
(149128, 149129)
Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions|F. Godel,M. Venkata Kamalakar,B. Doudin,Y. Henry,D. Halley,J. -F. Dayen###
(149169, 149170)
 We report on the fabrication and characterization of vertical spin-valvestructures using a thick epitaxial MgO barrier as spacer layer and agraphene-passivated Ni film as bottom ferromagnetic electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions|F. Godel,M. Venkata Kamalakar,B. Doudin,Y. Henry,D. Halley,J. -F. Dayen###
(149189, 149189)
 We report on the fabrication and characterization of vertical spin-valvestructures using a thick epitaxial MgO barrier as spacer layer and agraphene-passivated Ni film as bottom ferromagnetic electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions|F. Godel,M. Venkata Kamalakar,B. Doudin,Y. Henry,D. Halley,J. -F. Dayen###
(149305, 149305)
 These findings are explained by a model ofphonon-assisted transport mechanisms that relies on the peculiarity of the bandstructure and spin density of states at the hybrid grapheneNi interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Fe20Ni80)
###Magnetic Domain Wall Engineering in a Nanoscale Permalloy Junction|Junlin Wang,Xichao Zhang,Xianyang Lu,Jason Zhang,Hua Ling,Jing Wu,Yan Zhou,Yongbing Xu###
(149438, 149443)
 Here, we study thedomain structure and the magnetic switching in the Permalloy (Fe20Ni80)nanoscale magnetic junctions with different thicknesses by using micromagneticsimulations.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 7, 'nm', 2],[119.0, 22, 'nm', 2]

La0.7Sr0.3MnO3
###Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves|Robert Göckeritz,Nico Homonnay,Alexander Müller,Bodo Fuhrmann,Georg Schmidt###
(149676, 149682)
 The devices based on an La0.7Sr0.3MnO3/Alq3/Cotrilayer show resistive switching of up to 4-5 orders of magnitude andmagnetoresistance as high as -70% the latter even changing sign when voltagepulses are applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, -70, '%', 0]

Co
###Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves|Robert Göckeritz,Nico Homonnay,Alexander Müller,Bodo Fuhrmann,Georg Schmidt###
(149687, 149687)
 The devices based on an La0.7Sr0.3MnO3/Alq3/Cotrilayer show resistive switching of up to 4-5 orders of magnitude andmagnetoresistance as high as -70% the latter even changing sign when voltagepulses are applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, -70, '%', 0]

La0.7Sr0.3MnO3
###Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves|Robert Göckeritz,Nico Homonnay,Alexander Müller,Bodo Fuhrmann,Georg Schmidt###
(149830, 149836)
 Modeling indicatesthat here the switching originates from a modification of theLa0.7Sr0.3MnO3 surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, -70, '%', 2]

As
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(149945, 149945)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 15, ',', 5]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(149958, 149958)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 15, ',', 5]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(149964, 149964)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 15, ',', 5]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(150030, 150030)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 15, ',', 5]

In
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(150063, 150063)
 In order to sense all the states, 4-valued conductancescorresponding to the respective states are necessary.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 15, ',', 4]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(150121, 150121)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 15, ',', 3]

(SPS)
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(150131, 150135)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 15, ',', 3]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(150137, 150137)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 15, ',', 3]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(150147, 150147)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 15, ',', 3]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(150153, 150153)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 15, ',', 3]

In
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(150202, 150202)
 In this paper, anideal SPS is considered as a single-wall armchair carbon nanotube encapsulatingmagnetic atoms, where the nanotube shows on-resonance or off-resonance at theFermi level according to its length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 15, ',', 1]

SPS
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(150214, 150216)
 In this paper, anideal SPS is considered as a single-wall armchair carbon nanotube encapsulatingmagnetic atoms, where the nanotube shows on-resonance or off-resonance at theFermi level according to its length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 15, ',', 1]

PS
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(150466, 150467)
 Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions(DMTJ) offer practical solutions to downscale spin-transfer-torque MagneticRandom-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retainingtheir thermal stability and reducing critical currents applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3, 'D', 1],[59.0, 20, 'nm', 0],[213.0, 3, 'D', 2],[352.0, 20, 'nm', 4]

S
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(150515, 150515)
 Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions(DMTJ) offer practical solutions to downscale spin-transfer-torque MagneticRandom-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retainingtheir thermal stability and reducing critical currents applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3, 'D', 1],[11.0, 20, 'nm', 0],[165.0, 3, 'D', 2],[304.0, 20, 'nm', 4]

In
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(150623, 150623)
 In this paper,we review recent work that was performed on these structures using a range ofadvanced electron microscopy techniques, focusing on aspects specific to the 3Dand nanoscale nature of such elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 3, 'D', 3],[97.0, 20, 'nm', 2],[57.0, 3, 'D', 0],[196.0, 20, 'nm', 2]

SS
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(150717, 150718)
 We present the methodology for thesystematic transfer of individual SST-MRAM<missing VAR> nano-pillars from large-scale arraysto image their magnetic configurations directly using off-axis electronholography.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 3, 'D', 4],[191.0, 20, 'nm', 3],[37.0, 3, 'D', 1],[101.0, 20, 'nm', 1]

PS
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(150821, 150822)
 We show that improved phase sensitivity through stacking ofelectron holograms can be used to image subtle variations in DMTJs and thethermal stability of < 20 nm PSA-STT-MRAM<missing VAR> nano-pillars during in-situ heating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 3, 'D', 5],[295.0, 20, 'nm', 4],[141.0, 3, 'D', 2],[2.0, 20, 'nm', 0]

S
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(150825, 150825)
 We show that improved phase sensitivity through stacking ofelectron holograms can be used to image subtle variations in DMTJs and thethermal stability of < 20 nm PSA-STT-MRAM<missing VAR> nano-pillars during in-situ heating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 3, 'D', 5],[299.0, 20, 'nm', 4],[145.0, 3, 'D', 2],[6.0, 20, 'nm', 0]

Ni/Au/Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(150947, 150951)
Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[128.0, 30, 'nm', 3],[161.0, 30, 'nm', 4],[304.0, 25, 'nm', 7],[382.0, 1.7, 'K', 9],[626.0, 10, '%', 12],[649.0, 22, '%', 12]

Ni/Au/Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(150986, 150990)
 We have investigated spin accumulation in Ni/Au/Ni single-electrontransistors assembled by atomic force microscopy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[89.0, 30, 'nm', 2],[122.0, 30, 'nm', 3],[265.0, 25, 'nm', 6],[343.0, 1.7, 'K', 8],[587.0, 10, '%', 11],[610.0, 22, '%', 11]

Au
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151064, 151064)
 A grid of Au discs, 30nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventionale<missing VAR>-beam writing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 30, 'nm', 0],[48.0, 30, 'nm', 1],[191.0, 25, 'nm', 4],[269.0, 1.7, 'K', 6],[513.0, 10, '%', 9],[536.0, 22, '%', 9]

SiO2
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151092, 151094)
 A grid of Au discs, 30nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventionale<missing VAR>-beam writing.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 30, 'nm', 0],[18.0, 30, 'nm', 1],[161.0, 25, 'nm', 4],[239.0, 1.7, 'K', 6],[483.0, 10, '%', 9],[506.0, 22, '%', 9]

Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151118, 151118)
 Subsequently, 30 nm thick ferromagnetic Ni source, drain andside-gate electrodes are formed in similar process steps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 30, 'nm', 1],[6.0, 30, 'nm', 0],[137.0, 25, 'nm', 3],[215.0, 1.7, 'K', 5],[459.0, 10, '%', 8],[482.0, 22, '%', 8]

NiO
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151192, 151193)
 Tunnel barriers of NiO are realized by sequential Ar and O2plasma treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 30, 'nm', 3],[80.0, 30, 'nm', 2],[62.0, 25, 'nm', 1],[140.0, 1.7, 'K', 3],[384.0, 10, '%', 6],[407.0, 22, '%', 6]

Ar
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151203, 151203)
 Tunnel barriers of NiO are realized by sequential Ar and O2plasma treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 30, 'nm', 3],[91.0, 30, 'nm', 2],[52.0, 25, 'nm', 1],[130.0, 1.7, 'K', 3],[374.0, 10, '%', 6],[397.0, 22, '%', 6]

O2
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151207, 151208)
 Tunnel barriers of NiO are realized by sequential Ar and O2plasma treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 30, 'nm', 3],[95.0, 30, 'nm', 2],[47.0, 25, 'nm', 1],[125.0, 1.7, 'K', 3],[369.0, 10, '%', 6],[392.0, 22, '%', 6]

Au
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151244, 151244)
 Using an atomic force microscope with specially designedsoftware, a single non-magnetic Au nanodisc is positioned into the 25 nm gapbetween the source and drain electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 30, 'nm', 4],[132.0, 30, 'nm', 3],[11.0, 25, 'nm', 0],[89.0, 1.7, 'K', 2],[333.0, 10, '%', 5],[356.0, 22, '%', 5]

Au
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151298, 151298)
 The resistance of the device ismonitored in real-time while the Au disc is manipulated step-by-step withAngstrom-level precision.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 30, 'nm', 5],[186.0, 30, 'nm', 4],[43.0, 25, 'nm', 1],[35.0, 1.7, 'K', 1],[279.0, 10, '%', 4],[302.0, 22, '%', 4]

Au
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151374, 151374)
 Transport measurements in magnetic field at 1.7 Kreveal no clear spin accumulation in the device, which can be attributed tofast spin relaxation in the Au disc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 30, 'nm', 6],[262.0, 30, 'nm', 5],[119.0, 25, 'nm', 2],[41.0, 1.7, 'K', 0],[203.0, 10, '%', 3],[226.0, 22, '%', 3]

Au
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151446, 151446)
 From numerical simulations using therate-equation approach of orthodox Coulomb blockade theory, we can put an upperbound of a few ns on the spin-relaxation time for electrons in the Au disc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 30, 'nm', 7],[334.0, 30, 'nm', 6],[191.0, 25, 'nm', 3],[113.0, 1.7, 'K', 1],[131.0, 10, '%', 2],[154.0, 22, '%', 2]

Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151477, 151477)
 Toconfirm the magnetic switching characteristics and spin injection efficiency ofthe Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Nimagnetic tunnel junction with asymmetric dimensions of the electrodes similarto those of the SE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 30, 'nm', 8],[365.0, 30, 'nm', 7],[222.0, 25, 'nm', 4],[144.0, 1.7, 'K', 2],[100.0, 10, '%', 1],[123.0, 22, '%', 1]

Ni/NiO/Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151498, 151503)
 Toconfirm the magnetic switching characteristics and spin injection efficiency ofthe Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Nimagnetic tunnel junction with asymmetric dimensions of the electrodes similarto those of the SE<missing VAR>Ts.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[419.0, 30, 'nm', 8],[386.0, 30, 'nm', 7],[243.0, 25, 'nm', 4],[165.0, 1.7, 'K', 2],[74.0, 10, '%', 1],[97.0, 22, '%', 1]

S
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151535, 151535)
 Toconfirm the magnetic switching characteristics and spin injection efficiency ofthe Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Nimagnetic tunnel junction with asymmetric dimensions of the electrodes similarto those of the SE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[456.0, 30, 'nm', 8],[423.0, 30, 'nm', 7],[280.0, 25, 'nm', 4],[202.0, 1.7, 'K', 2],[42.0, 10, '%', 1],[65.0, 22, '%', 1]

Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(151607, 151607)
 Magnetoresistance measurements on the test deviceexhibited clear signs of magnetic reversal and a maximum TMR of 10%, from whichwe deduced a spin-polarization of about 22% in the Ni electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[528.0, 30, 'nm', 9],[495.0, 30, 'nm', 8],[352.0, 25, 'nm', 5],[274.0, 1.7, 'K', 3],[30.0, 10, '%', 0],[7.0, 22, '%', 0]

Co/PbTiO3/Co
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(151640, 151647)
Spin-dependent transport in a multiferroic tunnel junction Theory for Co/PbTiO3/Co.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/PbTiO3/Co
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(151662, 151669)
 Spin-dependent electronic transport through multiferroic Co/PbTiO3/Cotunnel junctions is studied theoretically.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(151694, 151694)
 Conductances calculated within theLandauer-Buttiker formalism yield both a large tunnel magnetoresistance (TMR)and a large tunnel electroresistance (TER).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(151788, 151788)
 In particular, the spin polarization ofthe tunneling electronic states is affected by the hybridization of orbitalsand the associated charge transfer at both interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbTiO3
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(151851, 151854)
 Digital doping of thePbTiO3 barrier with Zr impurities at the TiO2/Co2 interfacesignificantly enhances the TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zr
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(151860, 151860)
 Digital doping of thePbTiO3 barrier with Zr impurities at the TiO2/Co2 interfacesignificantly enhances the TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2/Co2
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(151868, 151873)
 Digital doping of thePbTiO3 barrier with Zr impurities at the TiO2/Co2 interfacesignificantly enhances the TMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(151889, 151889)
 In addition, it removes the metalization ofthe barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Asymmetric Coulomb Oscillation and Giant Anisotropic Magnetoresistance in Doped Graphene Nanojunctions|Subramani Amutha,Arijit Sen###
(152033, 152033)
 Subsequently we explore the effect ofsubstitutional doping of transition metal atoms in zigzag graphene nanodots(z-GNDs) on the charge transport under non-collinear magnetization.
EXCEPTION 3: IndexError for Ds
NDs
[77.0, 700, '%', 1],[185.0, 3, 'nm', 2],[188.0, 1, 'nm', 2]

VC
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152391, 152392)
 Voltage-controlled magnetoresistive random access memory (VC-MRAM) based onvoltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is apromising ultimate non-volatile memory with ultralow power consumption.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152491, 152491)
However, the dynamic switching in a conventional MTJ is accompanied by arelatively high write error rate (WER), hindering the reliable operation ofVC-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VC
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152508, 152509)
However, the dynamic switching in a conventional MTJ is accompanied by arelatively high write error rate (WER), hindering the reliable operation ofVC-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152546, 152546)
 Here, we propose a reliable writing scheme using the in-planedemagnetizing field (ID<missing VAR>F) and voltage-induced negative out-of-plane anisotropyfield (NOAF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152548, 152548)
 Here, we propose a reliable writing scheme using the in-planedemagnetizing field (ID<missing VAR>F) and voltage-induced negative out-of-plane anisotropyfield (NOAF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152571, 152572)
 Here, we propose a reliable writing scheme using the in-planedemagnetizing field (ID<missing VAR>F) and voltage-induced negative out-of-plane anisotropyfield (NOAF).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152574, 152574)
 Here, we propose a reliable writing scheme using the in-planedemagnetizing field (ID<missing VAR>F) and voltage-induced negative out-of-plane anisotropyfield (NOAF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152601, 152602)
 Numerical simulations based on macrospin model demonstrate thatthe voltage-induced NOAF modifies the switching dynamics and increases thetorque due to the ID<missing VAR>F, thereby reducing the switching time.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152604, 152604)
 Numerical simulations based on macrospin model demonstrate thatthe voltage-induced NOAF modifies the switching dynamics and increases thetorque due to the ID<missing VAR>F, thereby reducing the switching time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152629, 152629)
 Numerical simulations based on macrospin model demonstrate thatthe voltage-induced NOAF modifies the switching dynamics and increases thetorque due to the ID<missing VAR>F, thereby reducing the switching time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152631, 152631)
 Numerical simulations based on macrospin model demonstrate thatthe voltage-induced NOAF modifies the switching dynamics and increases thetorque due to the ID<missing VAR>F, thereby reducing the switching time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152647, 152647)
 The ID<missing VAR>F andvoltage-induced NOAF also reduce the mean energy difference between themagnetization direction at the end of the pulse and the equilibrium direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152649, 152649)
 The ID<missing VAR>F andvoltage-induced NOAF also reduce the mean energy difference between themagnetization direction at the end of the pulse and the equilibrium direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152658, 152659)
 The ID<missing VAR>F andvoltage-induced NOAF also reduce the mean energy difference between themagnetization direction at the end of the pulse and the equilibrium direction.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152661, 152661)
 The ID<missing VAR>F andvoltage-induced NOAF also reduce the mean energy difference between themagnetization direction at the end of the pulse and the equilibrium direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152706, 152706)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152723, 152723)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152725, 152725)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152733, 152734)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152736, 152736)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(152743, 152743)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Skyrmion-mediated Nonvolatile Ternary Memory|Md Mahadi Rajib,Namita Bindal,Ravish Kumar Raj,Brajesh Kumar Kaushik,Jayasimha Atulasimha###
(152868, 152868)
 In the past, it has beendemonstrated that voltage-controlled magnetic anisotropy (VCM<missing VAR>A) based writingis highly energy-efficient compared to other writing methods used innon-volatile nano-magnetic binary memory systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, -1, ',', 2],[174.0, 0, ',', 2],[227.0, 99, '%', 2],[325.0, 2, 'X', 3]

VC
###Skyrmion-mediated Nonvolatile Ternary Memory|Md Mahadi Rajib,Namita Bindal,Ravish Kumar Raj,Brajesh Kumar Kaushik,Jayasimha Atulasimha###
(152895, 152896)
 In the past, it has beendemonstrated that voltage-controlled magnetic anisotropy (VCM<missing VAR>A) based writingis highly energy-efficient compared to other writing methods used innon-volatile nano-magnetic binary memory systems.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, -1, ',', 2],[146.0, 0, ',', 2],[199.0, 99, '%', 2],[297.0, 2, 'X', 3]

In
###Skyrmion-mediated Nonvolatile Ternary Memory|Md Mahadi Rajib,Namita Bindal,Ravish Kumar Raj,Brajesh Kumar Kaushik,Jayasimha Atulasimha###
(152944, 152944)
 In this study, we introduce anew, VCM<missing VAR>A-based and skyrmion-mediated non-volatile ternary memory system usinga perpendicular magnetic tunnel junction (p-MTJ) in the presence of roomtemperature thermal perturbation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, -1, ',', 1],[98.0, 0, ',', 1],[151.0, 99, '%', 1],[249.0, 2, 'X', 2]

VC
###Skyrmion-mediated Nonvolatile Ternary Memory|Md Mahadi Rajib,Namita Bindal,Ravish Kumar Raj,Brajesh Kumar Kaushik,Jayasimha Atulasimha###
(152961, 152962)
 In this study, we introduce anew, VCM<missing VAR>A-based and skyrmion-mediated non-volatile ternary memory system usinga perpendicular magnetic tunnel junction (p-MTJ) in the presence of roomtemperature thermal perturbation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, -1, ',', 1],[80.0, 0, ',', 1],[133.0, 99, '%', 1],[231.0, 2, 'X', 2]

S
###Skyrmion-mediated Nonvolatile Ternary Memory|Md Mahadi Rajib,Namita Bindal,Ravish Kumar Raj,Brajesh Kumar Kaushik,Jayasimha Atulasimha###
(153223, 153223)
 Additionally, we show that our proposed ternary memory demonstratesan improvement in area and energy by at least 2X and 60X<missing VAR> respectively,compared to state-of-the-art spin-transfer torque (STT)-based non-volatilemagnetic multistate memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, -1, ',', 1],[181.0, 0, ',', 1],[128.0, 99, '%', 1],[30.0, 2, 'X', 0]

In
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153312, 153312)
 In this dissertation, thermal and electrical properties of aligned multiwallcarbon nanotubes (M<missing VAR>WNTs) prepared by thermal decomposition of hydrocarbons havebeen experimentally studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, ',', 3],[102.0, 3, ',', 4],[299.0, 4, ',', 7],[456.0, 5, ',', 10],[565.0, 20, 'mK', 12]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153340, 153341)
 In this dissertation, thermal and electrical properties of aligned multiwallcarbon nanotubes (M<missing VAR>WNTs) prepared by thermal decomposition of hydrocarbons havebeen experimentally studied.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, ',', 3],[73.0, 3, ',', 4],[270.0, 4, ',', 7],[427.0, 5, ',', 10],[536.0, 20, 'mK', 12]

In
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153391, 153391)
 In Ch2, sample preparation and characterizations are described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, ',', 0],[23.0, 3, ',', 1],[220.0, 4, ',', 4],[377.0, 5, ',', 7],[486.0, 20, 'mK', 9]

In
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153411, 153411)
In Ch3, by using a self-heating 3-Omega method, the specific heat, thermaldiffusivity and thermal conductivity of M<missing VAR>WNTs are measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, ',', 1],[3.0, 3, ',', 0],[200.0, 4, ',', 3],[357.0, 5, ',', 6],[466.0, 20, 'mK', 8]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153455, 153456)
In Ch3, by using a self-heating 3-Omega method, the specific heat, thermaldiffusivity and thermal conductivity of M<missing VAR>WNTs are measured.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, ',', 1],[41.0, 3, ',', 0],[155.0, 4, ',', 3],[312.0, 5, ',', 6],[421.0, 20, 'mK', 8]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153465, 153466)
 M<missing VAR>WNTs of 20-40 nmdiameter show a linear specific heat over a temperature range of 10-300 K,suggesting that inter-wall coupling in M<missing VAR>WNTs is rather weak compared with thatof graphite.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, ',', 2],[51.0, 3, ',', 1],[145.0, 4, ',', 2],[302.0, 5, ',', 5],[411.0, 20, 'mK', 7]

K
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153504, 153504)
 M<missing VAR>WNTs of 20-40 nmdiameter show a linear specific heat over a temperature range of 10-300 K,suggesting that inter-wall coupling in M<missing VAR>WNTs is rather weak compared with thatof graphite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, ',', 2],[90.0, 3, ',', 1],[107.0, 4, ',', 2],[264.0, 5, ',', 5],[373.0, 20, 'mK', 7]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153521, 153522)
 M<missing VAR>WNTs of 20-40 nmdiameter show a linear specific heat over a temperature range of 10-300 K,suggesting that inter-wall coupling in M<missing VAR>WNTs is rather weak compared with thatof graphite.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2, ',', 2],[107.0, 3, ',', 1],[89.0, 4, ',', 2],[246.0, 5, ',', 5],[355.0, 20, 'mK', 7]

K
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153575, 153575)
 The thermal conductivity shows a crossover from linear temperaturedependence to a square law at 120K, with a rather low room-temperatureamplitude which may have resulted from structural defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2, ',', 3],[161.0, 3, ',', 2],[36.0, 4, ',', 1],[193.0, 5, ',', 4],[302.0, 20, 'mK', 6]

In
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153608, 153608)
 In Ch4, four-wiretunneling spectroscopy of junctions between M<missing VAR>WNTs and a normal metal ismeasured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 2, ',', 4],[194.0, 3, ',', 3],[3.0, 4, ',', 0],[160.0, 5, ',', 3],[269.0, 20, 'mK', 5]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153630, 153631)
 In Ch4, four-wiretunneling spectroscopy of junctions between M<missing VAR>WNTs and a normal metal ismeasured.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 2, ',', 4],[216.0, 3, ',', 3],[19.0, 4, ',', 0],[137.0, 5, ',', 3],[246.0, 20, 'mK', 5]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153659, 153660)
 The Coulomb interactions in the M<missing VAR>WNTs give rise to a strong zero-biassuppression of tunneling density of states that can be fitted numerically withthe environmental quantum-fluctuation theory.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 2, ',', 5],[245.0, 3, ',', 4],[48.0, 4, ',', 1],[108.0, 5, ',', 2],[217.0, 20, 'mK', 4]

At
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153714, 153714)
 At low temperatures, anasymmetric conductance anomaly near zero bias is observed, which is interpretedas Fano resonance in the strong tunneling regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 2, ',', 6],[300.0, 3, ',', 5],[103.0, 4, ',', 2],[54.0, 5, ',', 1],[163.0, 20, 'mK', 3]

In
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153765, 153765)
 In Ch5, the thermoelectricpower (TEP) and longitudinal magnetoresistance (MR) of M<missing VAR>WNTs are measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 2, ',', 7],[351.0, 3, ',', 6],[154.0, 4, ',', 3],[3.0, 5, ',', 0],[112.0, 20, 'mK', 2]

P
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153781, 153781)
 In Ch5, the thermoelectricpower (TEP) and longitudinal magnetoresistance (MR) of M<missing VAR>WNTs are measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 2, ',', 7],[367.0, 3, ',', 6],[170.0, 4, ',', 3],[13.0, 5, ',', 0],[96.0, 20, 'mK', 2]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153798, 153799)
 In Ch5, the thermoelectricpower (TEP) and longitudinal magnetoresistance (MR) of M<missing VAR>WNTs are measured.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[404.0, 2, ',', 7],[384.0, 3, ',', 6],[187.0, 4, ',', 3],[30.0, 5, ',', 0],[78.0, 20, 'mK', 2]

P
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153816, 153816)
 Amoderate positive TEP with metallic-like linear temperature dependence isfound, suggesting that the electron-hole symmetry in metallic M<missing VAR>WNTs is broken.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[422.0, 2, ',', 8],[402.0, 3, ',', 7],[205.0, 4, ',', 4],[48.0, 5, ',', 1],[61.0, 20, 'mK', 1]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153853, 153854)
 Amoderate positive TEP with metallic-like linear temperature dependence isfound, suggesting that the electron-hole symmetry in metallic M<missing VAR>WNTs is broken.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[459.0, 2, ',', 8],[439.0, 3, ',', 7],[242.0, 4, ',', 4],[85.0, 5, ',', 1],[23.0, 20, 'mK', 1]

S
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(153930, 153930)
 The period of oscillation agrees well with the period h<missing VAR>/2e<missing VAR> ofAltshuler-Aronov-Spivak (AAS) effect if only the outermost graphene wallcontributes to conductance, clearly indicating quantum-interference effects atlow temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[536.0, 2, ',', 10],[516.0, 3, ',', 9],[319.0, 4, ',', 6],[162.0, 5, ',', 3],[53.0, 20, 'mK', 1]

Co
###Co-ordination between Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors|Wei Wu,Jinbin Li,Yue Yu,S. T. Chui###
(153993, 153993)
Co-ordination between Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Co-ordination between Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors|Wei Wu,Jinbin Li,Yue Yu,S. T. Chui###
(154111, 154111)
 In diffusion region, if the theresistance of the tunneling barriers is comparable to the semiconductorresistance, the magnetoresistance of this junction can be greatly enhancedunder appropriate doping by the co-ordination between the Rashba effect andscreened Coulomb interaction in the nonequilibrium transport processes withinHartree approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(154420, 154420)
 Dueto their momentum-dependent spin polarization, such antiferromagnets can beused as active elements in antiferromagnetic tunnel junctions (AFMTJs) andproduce a giant tunneling magnetoresistance (TMR) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 500, '%', 1]

RuO2
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(154450, 154452)
 Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 500, '%', 0]

RuO2/TiO2/RuO2
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(154506, 154516)
 Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[82.0, 500, '%', 0]

F
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(154523, 154523)
 Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 500, '%', 0]

N
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(154561, 154561)
 Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 500, '%', 0]

RuO2
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(154572, 154574)
 Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 500, '%', 0]

F
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(154636, 154636)
 These results are expanded to normal metals which can be usedas a counter electrode in AFMTJs with a single antiferromagnetic layer or otherelements in spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 500, '%', 1]

N
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(154714, 154714)
Nel Spin Currents in Antiferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(154824, 154824)
 Here, we demonstrate that these globallyspin-neutral currents can represent the Neel spin currents, i.e.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(154857, 154857)
 The Neel spincurrents emerge in antiferromagnets with strong intra-sublattice coupling(hopping) and drive the spin-dependent transport phenomena such as tunnelingmagnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetictunnel junctions (AFMTJs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(154924, 154924)
 The Neel spincurrents emerge in antiferromagnets with strong intra-sublattice coupling(hopping) and drive the spin-dependent transport phenomena such as tunnelingmagnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetictunnel junctions (AFMTJs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(154940, 154940)
 The Neel spincurrents emerge in antiferromagnets with strong intra-sublattice coupling(hopping) and drive the spin-dependent transport phenomena such as tunnelingmagnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetictunnel junctions (AFMTJs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RuO2
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(154949, 154951)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe4GeTe2
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(154955, 154959)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(154977, 154977)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(155007, 155007)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(155026, 155026)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(155038, 155038)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2RuGa
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155140, 155143)
First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn2RuGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155157, 155157)
 All-optical spin switching (AOS) represents a new frontier in magneticstorage technology -- spin manipulation without a magnetic field, -- but itsunderlying working principle is not well understood.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155219, 155220)
 Many AOS ferrimagnets suchas GdFeCo are amorphous and renders the high-level first-principles studyunfeasible.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdFeCo
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155229, 155231)
 Many AOS ferrimagnets suchas GdFeCo are amorphous and renders the high-level first-principles studyunfeasible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2RuGa
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155267, 155270)
 The crystalline half-metallic Heusler Mn2RuGa presents anopportunity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2RuGa
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155311, 155314)
 Here we carry out hitherto the comprehensive density functionalinvestigation into the material properties of Mn2RuGa, and introduce twoconcepts - the spin anchor site and the optical active site - as two pillarsfor AOS in ferrimagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155358, 155359)
 Here we carry out hitherto the comprehensive density functionalinvestigation into the material properties of Mn2RuGa, and introduce twoconcepts - the spin anchor site and the optical active site - as two pillarsfor AOS in ferrimagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155366, 155366)
 In Mn2RuGa, Mn(4a) serves as the spin anchorsite, whose band structure is below the Fermi level and has a strong spinmoment, while Mn(4c) is the optical active site whose band crosses the Fermilevel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2RuGa
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155368, 155371)
 In Mn2RuGa, Mn(4a) serves as the spin anchorsite, whose band structure is below the Fermi level and has a strong spinmoment, while Mn(4c) is the optical active site whose band crosses the Fermilevel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155491, 155491)
 Our magneto-optical Kerr spectrum and band structure calculation jointlyreveal that the delicate competition between the Ru-4d<missing VAR> and Ga-4p<missing VAR> states isresponsible for the creation of these two sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155498, 155498)
 Our magneto-optical Kerr spectrum and band structure calculation jointlyreveal that the delicate competition between the Ru-4d<missing VAR> and Ga-4p<missing VAR> states isresponsible for the creation of these two sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2RuGa
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155552, 155555)
 These two sites found here notonly present a unified picture for both Mn2RuGa and GdFeCo, but also openthe door for the future applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdFeCo
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155559, 155561)
 These two sites found here notonly present a unified picture for both Mn2RuGa and GdFeCo, but also openthe door for the future applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2Ru
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155594, 155596)
 Specifically, we propose aMn2Rux<missing VAR>Ga-based magnetic tunnel junction where a single laser pulse cancontrol magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(155598, 155598)
 Specifically, we propose aMn2Rux<missing VAR>Ga-based magnetic tunnel junction where a single laser pulse cancontrol magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(155967, 155967)
 Weve developed alow-tech, resist- and solvent-free technological process that can craftnanopillar devices from entire in-situ grown heterostructures, and use it tostudy magnetotransport between two Fe and Co ferromagnetic electrodes across afunctional magnetic CoPc molecular layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 5.9, 'meV', 4]

Co
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(155971, 155971)
 Weve developed alow-tech, resist- and solvent-free technological process that can craftnanopillar devices from entire in-situ grown heterostructures, and use it tostudy magnetotransport between two Fe and Co ferromagnetic electrodes across afunctional magnetic CoPc molecular layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 5.9, 'meV', 4]

Co
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(155986, 155986)
 Weve developed alow-tech, resist- and solvent-free technological process that can craftnanopillar devices from entire in-situ grown heterostructures, and use it tostudy magnetotransport between two Fe and Co ferromagnetic electrodes across afunctional magnetic CoPc molecular layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 5.9, 'meV', 4]

Co
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(156009, 156009)
 We observe how spin-flip transportacross CoPc molecular spin chains promotes a specific magnetoresistance effect,and alters the nanojunctions<missing VAR> magnetism through spintronic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 5.9, 'meV', 3]

In
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(156048, 156048)
 In theprocess, we identify three magnetic units along the effective nanotransportpath thanks to a macrospin model of magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 5.9, 'meV', 2]

Fe
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(156180, 156180)
 We notably measure a 5.9meV energy threshold formagnetic decoupling between the Fe layers<missing VAR> buried atoms and those in contactwith the CoPc layer forming the so-called spinterface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 5.9, 'meV', 0]

Co
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(156202, 156202)
 We notably measure a 5.9meV energy threshold formagnetic decoupling between the Fe layers<missing VAR> buried atoms and those in contactwith the CoPc layer forming the so-called spinterface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 5.9, 'meV', 0]

(I)
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(156670, 156672)
 The influence of impurities, embedded into the isolating spacer (I) betweentwo ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance(TMR), is theoretically investigated.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F)
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(156683, 156685)
 The influence of impurities, embedded into the isolating spacer (I) betweentwo ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance(TMR), is theoretically investigated.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(156692, 156692)
 The influence of impurities, embedded into the isolating spacer (I) betweentwo ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance(TMR), is theoretically investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(156694, 156694)
 The influence of impurities, embedded into the isolating spacer (I) betweentwo ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance(TMR), is theoretically investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/I
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(156844, 156846)
closer to the one of the interfaces F/I the I-V curve exhibits quasidiodebehavior.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(156850, 156850)
closer to the one of the interfaces F/I the I-V curve exhibits quasidiodebehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(156852, 156852)
closer to the one of the interfaces F/I the I-V curve exhibits quasidiodebehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbN
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157146, 157147)
Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157149, 157149)
Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbN
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157151, 157152)
Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157189, 157189)
 We report an unconventional and promising route to self-assemble distributedsuperconductor-ferromagnet-superconductor (S-F-S) Josephson Junctions on singlecrystal [100] MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157191, 157191)
 We report an unconventional and promising route to self-assemble distributedsuperconductor-ferromagnet-superconductor (S-F-S) Josephson Junctions on singlecrystal [100] MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157193, 157193)
 We report an unconventional and promising route to self-assemble distributedsuperconductor-ferromagnet-superconductor (S-F-S) Josephson Junctions on singlecrystal [100] MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157211, 157212)
 We report an unconventional and promising route to self-assemble distributedsuperconductor-ferromagnet-superconductor (S-F-S) Josephson Junctions on singlecrystal [100] MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157236, 157236)
 These structures consist of [110] epitaxial nano-plaquettesof Fe covered with superconducting NbN films of varying thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbN
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157244, 157245)
 These structures consist of [110] epitaxial nano-plaquettesof Fe covered with superconducting NbN films of varying thickness.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157258, 157258)
 The S-F-Sstructures are characterized by strong magnetoresistance (MR) anisotropy forthe in-plane and out-of-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157260, 157260)
 The S-F-Sstructures are characterized by strong magnetoresistance (MR) anisotropy forthe in-plane and out-of-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157262, 157262)
 The S-F-Sstructures are characterized by strong magnetoresistance (MR) anisotropy forthe in-plane and out-of-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157324, 157324)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157326, 157326)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157328, 157328)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157348, 157348)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157358, 157358)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157370, 157370)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(157377, 157377)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(MoS2)
###Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide|André Dankert,Parham Pashaei,M. Venkata Kamalakar,Anand P. S. Gaur,Satyaprakash Sahoo,Ivan Rungger,Awadhesh Narayan,Kapildeb Dolui,Anamul Hoque,Michel P. de Jong,Ram S. Katiyar,Stefano Sanvito,Saroj P. Dash###
(157452, 157456)
 The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) hasattracted widespread attention for its extraordinary electrical, optical, spinand valley related properties.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 75, 'K', 2],[295.0, 2, 'D', 5]

CV
###Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide|André Dankert,Parham Pashaei,M. Venkata Kamalakar,Anand P. S. Gaur,Satyaprakash Sahoo,Ivan Rungger,Awadhesh Narayan,Kapildeb Dolui,Anamul Hoque,Michel P. de Jong,Ram S. Katiyar,Stefano Sanvito,Saroj P. Dash###
(157516, 157517)
 Here, we report on spin polarized tunnelingthrough chemical vapor deposited (CVD) multilayer MoS2 (7 nm) at roomtemperature in a vertically fabricated spin-valve device.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 75, 'K', 1],[234.0, 2, 'D', 4]

MoS2
###Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide|André Dankert,Parham Pashaei,M. Venkata Kamalakar,Anand P. S. Gaur,Satyaprakash Sahoo,Ivan Rungger,Awadhesh Narayan,Kapildeb Dolui,Anamul Hoque,Michel P. de Jong,Ram S. Katiyar,Stefano Sanvito,Saroj P. Dash###
(157523, 157525)
 Here, we report on spin polarized tunnelingthrough chemical vapor deposited (CVD) multilayer MoS2 (7 nm) at roomtemperature in a vertically fabricated spin-valve device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 75, 'K', 1],[226.0, 2, 'D', 4]

MoS2
###Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide|André Dankert,Parham Pashaei,M. Venkata Kamalakar,Anand P. S. Gaur,Satyaprakash Sahoo,Ivan Rungger,Awadhesh Narayan,Kapildeb Dolui,Anamul Hoque,Michel P. de Jong,Ram S. Katiyar,Stefano Sanvito,Saroj P. Dash###
(157720, 157722)
 The detailedmeasurements at different temperatures and bias voltages, and densityfunctional theory calculations provide information about spin transportmechanisms in vertical multilayer MoS2 spin-valve devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 75, 'K', 2],[29.0, 2, 'D', 1]

F1
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(157828, 157829)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(157831, 157831)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(157833, 157833)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(157835, 157835)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F2
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(157837, 157838)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(158063, 158063)
 For all Co Cu  Co double layer junctions we observe a stable intermediate resistancestate which can be reached by current starting from the parallel configurationof the respective ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(158067, 158067)
 For all Co Cu  Co double layer junctions we observe a stable intermediate resistancestate which can be reached by current starting from the parallel configurationof the respective ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(158070, 158070)
 For all Co Cu  Co double layer junctions we observe a stable intermediate resistancestate which can be reached by current starting from the parallel configurationof the respective ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(158221, 158221)
 Current-induced magnetization dynamics in magneticsingle layer junctions of Cu  Co  Cu has been investigated in magnetic fieldswhich are applied perpendicular to the magnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(158224, 158224)
 Current-induced magnetization dynamics in magneticsingle layer junctions of Cu  Co  Cu has been investigated in magnetic fieldswhich are applied perpendicular to the magnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(158227, 158227)
 Current-induced magnetization dynamics in magneticsingle layer junctions of Cu  Co  Cu has been investigated in magnetic fieldswhich are applied perpendicular to the magnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet|Chenghao Shen,Ranran Cai,Alex Matos-Abiague,Wei Han,Jong E. Han,Igor Zutic###
(158345, 158349)
 We explain how Rashba spin-orbit coupling (SOC) in a two-dimensional electrongas (2DEG), or in a conventional s<missing VAR>-wave superconductor, can lead to a largemagnetoresistance even with one ferromagnet.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, 'DEG', 2]

SOC
###Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet|Chenghao Shen,Ranran Cai,Alex Matos-Abiague,Wei Han,Jong E. Han,Igor Zutic###
(158446, 158448)
 However, such enhancedmagnetoresistance is not generic and can be nonmonotonic and change its signwith Rashba SOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2, 'DEG', 1]

In
###Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet|Chenghao Shen,Ranran Cai,Alex Matos-Abiague,Wei Han,Jong E. Han,Igor Zutic###
(158591, 158591)
 In thefabricated junctions of quasi-2D<missing VAR> van der Waals ferromagnets with conventionals<missing VAR>-wave superconductors (Fe0.29TaS2/NbN) we find another example ofenhanced magnetoresistance where the presence of Rashba SOC reduces theeffective interfacial strength and is responsible for an equal-spin Andreevreflection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2, 'DEG', 2]

N
###Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet|Chenghao Shen,Ranran Cai,Alex Matos-Abiague,Wei Han,Jong E. Han,Igor Zutic###
(158634, 158634)
 In thefabricated junctions of quasi-2D<missing VAR> van der Waals ferromagnets with conventionals<missing VAR>-wave superconductors (Fe0.29TaS2/NbN) we find another example ofenhanced magnetoresistance where the presence of Rashba SOC reduces theeffective interfacial strength and is responsible for an equal-spin Andreevreflection.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 2, 'DEG', 2]

SOC
###Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet|Chenghao Shen,Ranran Cai,Alex Matos-Abiague,Wei Han,Jong E. Han,Igor Zutic###
(158662, 158664)
 In thefabricated junctions of quasi-2D<missing VAR> van der Waals ferromagnets with conventionals<missing VAR>-wave superconductors (Fe0.29TaS2/NbN) we find another example ofenhanced magnetoresistance where the presence of Rashba SOC reduces theeffective interfacial strength and is responsible for an equal-spin Andreevreflection.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 2, 'DEG', 2]

Co/Cu/Co
###Spin-transfer in bilayer magnetic nanopillars at high fields as a function of free layer thickness|W. Chen,A. D. Kent,M. J. Rooks,N. Ruiz,J. Z. Sun###
(159256, 159260)
 Spin transfer in asymmetric Co/Cu/Co bilayer magnetic nanopillars junctionshas been studied at low temperature as a function of free-layer thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[71.0, 7.5, 'T', 1],[95.0, 2, 'to', 1],[96.0, 5, 'nm', 1]

I
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(159528, 159528)
Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 20, 'mVolt', 2]

V
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(159530, 159530)
Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 20, 'mVolt', 2]

Fe/MgO
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(159536, 159539)
Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[99.0, 20, 'mVolt', 2]

Fe/MgO/Fe
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(159573, 159578)
 The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunneljunctions is investigated theoretically with a fully self-consistent schemethat combines the non-equilibrium Greens<missing VAR> functions method with densityfunctional theory.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 20, 'mVolt', 1]

At
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(159631, 159631)
 At voltages smaller than 20 mVolt the I-V characteristicsand the TMR are dominated by resonant transport through narrow interface statesin the minority spin-band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 20, 'mVolt', 0]

I
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(159642, 159642)
 At voltages smaller than 20 mVolt the I-V characteristicsand the TMR are dominated by resonant transport through narrow interface statesin the minority spin-band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 20, 'mVolt', 0]

V
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(159644, 159644)
 At voltages smaller than 20 mVolt the I-V characteristicsand the TMR are dominated by resonant transport through narrow interface statesin the minority spin-band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 20, 'mVolt', 0]

In
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(159687, 159687)
 In the parallel configuration this contribution isquenched by a voltage comparable to the energy width of the interface state,whereas it persists at all voltages in the anti-parallel configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 20, 'mVolt', 1]

At
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(159753, 159753)
 Athigher bias the transport is mainly determined by the relative positions of theDelta1 band-edges in the two Fe electrodes, which causes a decrease of theTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 20, 'mVolt', 2]

Fe
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(159796, 159796)
 Athigher bias the transport is mainly determined by the relative positions of theDelta1 band-edges in the two Fe electrodes, which causes a decrease of theTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 20, 'mVolt', 2]

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(159849, 159849)
Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(159938, 159938)
 A key breakthrough in molecular electronicswas the discovery of amine-Au link groups that give reproducible conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(159971, 159971)
Using first principles calculations, we predict that amine-Au links giveimproved reproducibility in organic spintronics junctions with Au-covered Feleads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(159992, 159992)
Using first principles calculations, we predict that amine-Au links giveimproved reproducibility in organic spintronics junctions with Au-covered Feleads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(159996, 159996)
Using first principles calculations, we predict that amine-Au links giveimproved reproducibility in organic spintronics junctions with Au-covered Feleads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(160004, 160004)
 The Au layers allow only states with sp character to tunnel into themolecule, and the flexibility of amine-Au links results in a narrow range ofTMR for fixed number of Au layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(160042, 160042)
 The Au layers allow only states with sp character to tunnel into themolecule, and the flexibility of amine-Au links results in a narrow range ofTMR for fixed number of Au layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(160071, 160071)
 The Au layers allow only states with sp character to tunnel into themolecule, and the flexibility of amine-Au links results in a narrow range ofTMR for fixed number of Au layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(160082, 160082)
 Even as the Au thickness changes, TMRremains positive as long as the number of Au layers is the same on both sidesof the junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(160110, 160110)
 Even as the Au thickness changes, TMRremains positive as long as the number of Au layers is the same on both sidesof the junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(160142, 160142)
 Since the number of Au layers on Fe surfaces or Fenanoparticles can now be experimentally controlled, amine-Au links provide aroute towards robust TMR in organic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(160148, 160148)
 Since the number of Au layers on Fe surfaces or Fenanoparticles can now be experimentally controlled, amine-Au links provide aroute towards robust TMR in organic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(160154, 160154)
 Since the number of Au layers on Fe surfaces or Fenanoparticles can now be experimentally controlled, amine-Au links provide aroute towards robust TMR in organic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(160172, 160172)
 Since the number of Au layers on Fe surfaces or Fenanoparticles can now be experimentally controlled, amine-Au links provide aroute towards robust TMR in organic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(160274, 160274)
 For spin-polarized junctions of ferromagnetically contacting multipleconductive paths, such as ferromagnet (FM)/atomic wires/FM<missing VAR> and FM<missing VAR>/carbonnanotubes/FM<missing VAR> junctions, we theoretically investigate spin-dependent transportto elucidate the intrinsic relation between the number of paths and conduction,and to enhance the magnetoresistance (MR) ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(160282, 160282)
 For spin-polarized junctions of ferromagnetically contacting multipleconductive paths, such as ferromagnet (FM)/atomic wires/FM<missing VAR> and FM<missing VAR>/carbonnanotubes/FM<missing VAR> junctions, we theoretically investigate spin-dependent transportto elucidate the intrinsic relation between the number of paths and conduction,and to enhance the magnetoresistance (MR) ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(160287, 160287)
 For spin-polarized junctions of ferromagnetically contacting multipleconductive paths, such as ferromagnet (FM)/atomic wires/FM<missing VAR> and FM<missing VAR>/carbonnanotubes/FM<missing VAR> junctions, we theoretically investigate spin-dependent transportto elucidate the intrinsic relation between the number of paths and conduction,and to enhance the magnetoresistance (MR) ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(160295, 160295)
 For spin-polarized junctions of ferromagnetically contacting multipleconductive paths, such as ferromagnet (FM)/atomic wires/FM<missing VAR> and FM<missing VAR>/carbonnanotubes/FM<missing VAR> junctions, we theoretically investigate spin-dependent transportto elucidate the intrinsic relation between the number of paths and conduction,and to enhance the magnetoresistance (MR) ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(160377, 160377)
 When many paths are randomlylocated between the two FMs, electronic wave interference between the FMsappears, and then the MR ratio increases with increasing number of paths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(160391, 160391)
 When many paths are randomlylocated between the two FMs, electronic wave interference between the FMsappears, and then the MR ratio increases with increasing number of paths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(160487, 160487)
Furthermore, at each number of paths, the MR ratio for carbon nanotubes becomeslarger than that for atomic wires, reflecting the characteristic shape ofpoints in contact with the FM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2Sb
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161050, 161052)
Perpendicular magnetic anisotropy in ultra-thin Cu2Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 3.0, 'nm', 4],[451.0, 5, 'and', 6],[452.0, 3, 'nm', 6]

Mn
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161057, 161057)
Perpendicular magnetic anisotropy in ultra-thin Cu2Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 3.0, 'nm', 4],[446.0, 5, 'and', 6],[447.0, 3, 'nm', 6]

Cr
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161059, 161059)
Perpendicular magnetic anisotropy in ultra-thin Cu2Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 3.0, 'nm', 4],[444.0, 5, 'and', 6],[445.0, 3, 'nm', 6]

AlGe
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161061, 161062)
Perpendicular magnetic anisotropy in ultra-thin Cu2Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 3.0, 'nm', 4],[441.0, 5, 'and', 6],[442.0, 3, 'nm', 6]

S
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161124, 161124)
 Perpendicularly magnetized films showing small saturation magnetization,Mmathrms, are essential for spin-transfer-torque writing typemagnetoresistive random access memories, STT-MRAMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 3.0, 'nm', 3],[379.0, 5, 'and', 5],[380.0, 3, 'nm', 5]

Mn
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161143, 161143)
 An intermetallic compound,(Mn-Cr)AlGe of the Cu2Sb-type crystal structure was investigated, in thisstudy, as a material showing the low Mmathrms (sim 300 k<missing VAR>A/m) andhigh-perpendicular magnetic anisotropy, Kmathrmu<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 3.0, 'nm', 2],[360.0, 5, 'and', 4],[361.0, 3, 'nm', 4]

Cr
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161145, 161145)
 An intermetallic compound,(Mn-Cr)AlGe of the Cu2Sb-type crystal structure was investigated, in thisstudy, as a material showing the low Mmathrms (sim 300 k<missing VAR>A/m) andhigh-perpendicular magnetic anisotropy, Kmathrmu<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 3.0, 'nm', 2],[358.0, 5, 'and', 4],[359.0, 3, 'nm', 4]

AlGe
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161147, 161148)
 An intermetallic compound,(Mn-Cr)AlGe of the Cu2Sb-type crystal structure was investigated, in thisstudy, as a material showing the low Mmathrms (sim 300 k<missing VAR>A/m) andhigh-perpendicular magnetic anisotropy, Kmathrmu<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 3.0, 'nm', 2],[355.0, 5, 'and', 4],[356.0, 3, 'nm', 4]

Cu2Sb
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161154, 161156)
 An intermetallic compound,(Mn-Cr)AlGe of the Cu2Sb-type crystal structure was investigated, in thisstudy, as a material showing the low Mmathrms (sim 300 k<missing VAR>A/m) andhigh-perpendicular magnetic anisotropy, Kmathrmu<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 3.0, 'nm', 2],[347.0, 5, 'and', 4],[348.0, 3, 'nm', 4]

K
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161216, 161216)
 An intermetallic compound,(Mn-Cr)AlGe of the Cu2Sb-type crystal structure was investigated, in thisstudy, as a material showing the low Mmathrms (sim 300 k<missing VAR>A/m) andhigh-perpendicular magnetic anisotropy, Kmathrmu<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 3.0, 'nm', 2],[287.0, 5, 'and', 4],[288.0, 3, 'nm', 4]

K
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161232, 161232)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 3.0, 'nm', 1],[271.0, 5, 'and', 3],[272.0, 3, 'nm', 3]

Mg
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161242, 161242)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 3.0, 'nm', 1],[261.0, 5, 'and', 3],[262.0, 3, 'nm', 3]

Mn
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161258, 161258)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3.0, 'nm', 1],[245.0, 5, 'and', 3],[246.0, 3, 'nm', 3]

Cr
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161260, 161260)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3.0, 'nm', 1],[243.0, 5, 'and', 3],[244.0, 3, 'nm', 3]

AlGeMgO
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161262, 161265)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3.0, 'nm', 1],[238.0, 5, 'and', 3],[239.0, 3, 'nm', 3]

K
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161298, 161298)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 3.0, 'nm', 1],[205.0, 5, 'and', 3],[206.0, 3, 'nm', 3]

Mg
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161322, 161322)
 Optimum Mg-insertion thicknesses were1.4 and 3.0 nm for the bottom and the top interfaces, respectively, which wererelatively thick compared to results in similar insertion effect investigationson magnetic tunnel junctions reported in previous studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3.0, 'nm', 0],[181.0, 5, 'and', 2],[182.0, 3, 'nm', 2]

Mg
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161418, 161418)
 The cross-sectionaltransmission electron microscope images revealed that the Mg-insertion layersacted as barriers to interdiffusion of Al-atoms as well as oxidization from theMgO layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 3.0, 'nm', 1],[85.0, 5, 'and', 1],[86.0, 3, 'nm', 1]

Al
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161437, 161437)
 The cross-sectionaltransmission electron microscope images revealed that the Mg-insertion layersacted as barriers to interdiffusion of Al-atoms as well as oxidization from theMgO layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3.0, 'nm', 1],[66.0, 5, 'and', 1],[67.0, 3, 'nm', 1]

MgO
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161454, 161455)
 The cross-sectionaltransmission electron microscope images revealed that the Mg-insertion layersacted as barriers to interdiffusion of Al-atoms as well as oxidization from theMgO layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 3.0, 'nm', 1],[48.0, 5, 'and', 1],[49.0, 3, 'nm', 1]

K
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161466, 161466)
 The values of Kmathrmu<missing VAR> were about 7 times 105 and 2times 105 J/m3 at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGefilms, respectively, with the optimum Mg-insertion thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 3.0, 'nm', 2],[37.0, 5, 'and', 0],[38.0, 3, 'nm', 0]

Mn
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161509, 161509)
 The values of Kmathrmu<missing VAR> were about 7 times 105 and 2times 105 J/m3 at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGefilms, respectively, with the optimum Mg-insertion thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 3.0, 'nm', 2],[6.0, 5, 'and', 0],[5.0, 3, 'nm', 0]

Cr
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161511, 161511)
 The values of Kmathrmu<missing VAR> were about 7 times 105 and 2times 105 J/m3 at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGefilms, respectively, with the optimum Mg-insertion thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 3.0, 'nm', 2],[8.0, 5, 'and', 0],[7.0, 3, 'nm', 0]

AlGe
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161513, 161514)
 The values of Kmathrmu<missing VAR> were about 7 times 105 and 2times 105 J/m3 at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGefilms, respectively, with the optimum Mg-insertion thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 3.0, 'nm', 2],[10.0, 5, 'and', 0],[9.0, 3, 'nm', 0]

Mg
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161529, 161529)
 The values of Kmathrmu<missing VAR> were about 7 times 105 and 2times 105 J/m3 at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGefilms, respectively, with the optimum Mg-insertion thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 3.0, 'nm', 2],[26.0, 5, 'and', 0],[25.0, 3, 'nm', 0]

K
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161539, 161539)
 TheKmathrmu<missing VAR> at a few nanometer thicknesses is comparable or higher thanthose reported in perpendicularly magnetized CoFeB films which areconventionally used in MRAMs, while the Mmathrms value is one third orless smaller than those of the CoFeB films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 3.0, 'nm', 3],[36.0, 5, 'and', 1],[35.0, 3, 'nm', 1]

CoFeB
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161574, 161576)
 TheKmathrmu<missing VAR> at a few nanometer thicknesses is comparable or higher thanthose reported in perpendicularly magnetized CoFeB films which areconventionally used in MRAMs, while the Mmathrms value is one third orless smaller than those of the CoFeB films.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 3.0, 'nm', 3],[71.0, 5, 'and', 1],[70.0, 3, 'nm', 1]

CoFeB
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161628, 161630)
 TheKmathrmu<missing VAR> at a few nanometer thicknesses is comparable or higher thanthose reported in perpendicularly magnetized CoFeB films which areconventionally used in MRAMs, while the Mmathrms value is one third orless smaller than those of the CoFeB films.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 3.0, 'nm', 3],[125.0, 5, 'and', 1],[124.0, 3, 'nm', 1]

Mn
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161640, 161640)
 The developed (Mn-Cr)AlGe films arepromising from the viewpoint of not only the magnetic properties, but also thecompatibility to the silicon process in the film fabrication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 3.0, 'nm', 4],[137.0, 5, 'and', 2],[136.0, 3, 'nm', 2]

Cr
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161642, 161642)
 The developed (Mn-Cr)AlGe films arepromising from the viewpoint of not only the magnetic properties, but also thecompatibility to the silicon process in the film fabrication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 3.0, 'nm', 4],[139.0, 5, 'and', 2],[138.0, 3, 'nm', 2]

AlGe
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(161644, 161645)
 The developed (Mn-Cr)AlGe films arepromising from the viewpoint of not only the magnetic properties, but also thecompatibility to the silicon process in the film fabrication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 3.0, 'nm', 4],[141.0, 5, 'and', 2],[140.0, 3, 'nm', 2]

Mn3Sn
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(161715, 161717)
Order parameter dynamics in Mn3Sn driven by D<missing VAR>C and pulsed spin-orbit torques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(161724, 161724)
Order parameter dynamics in Mn3Sn driven by D<missing VAR>C and pulsed spin-orbit torques.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(161758, 161758)
 We numerically investigate and develop analytic models for both the D<missing VAR>C andpulsed spin-orbit-torque (SOT)-driven response of order parameter insingle-domain Mn3Sn, which is a metallic antiferromagnet with an anti-chiral120circ spin structure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(161772, 161773)
 We numerically investigate and develop analytic models for both the D<missing VAR>C andpulsed spin-orbit-torque (SOT)-driven response of order parameter insingle-domain Mn3Sn, which is a metallic antiferromagnet with an anti-chiral120circ spin structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(161794, 161796)
 We numerically investigate and develop analytic models for both the D<missing VAR>C andpulsed spin-orbit-torque (SOT)-driven response of order parameter insingle-domain Mn3Sn, which is a metallic antiferromagnet with an anti-chiral120circ spin structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(161833, 161833)
 We show that D<missing VAR>C currents above a critical thresholdcan excite oscillatory dynamics of the order parameter in the gigahertz toterahertz frequency spectrum.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(161931, 161931)
 In the case of pulsed excitation,the magnetization can be switched from one stable state to any of the otherfive stable states in the Kagome plane by tuning the duration or the amplitudeof the current pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(162059, 162061)
 Precise functional forms of the final switched stateversus the input current are derived, offering crucial insights into theswitching dynamics of Mn3Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(162117, 162119)
 The readout of the magnetic state can becarried out via either the anomalous Hall effect, or the recently demonstratedtunneling magnetoresistance in an all-Mn3Sn junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(162193, 162193)
 Operating the device in pulsed mode orusing low D<missing VAR>C currents reduces the peak temperature rise in the sample due toJoule heating.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(162262, 162263)
 Our predictive modeling and simulation results can be used byboth theorists and experimentalists to explore the interplay of SOT<missing VAR> and theorder dynamics in Mn3Sn, and to further benchmark the device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(162277, 162279)
 Our predictive modeling and simulation results can be used byboth theorists and experimentalists to explore the interplay of SOT<missing VAR> and theorder dynamics in Mn3Sn, and to further benchmark the device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-polarized bipolar transport and its applications|S. Das Sarma,Jaroslav Fabian,Igor Zutic###
(162320, 162320)
 In spin-polarized bipolar transport both electrons and holes in dopedsemiconductors contribute to spin-charge coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 1000, '%', 3]

La2
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(162752, 162753)
 We have studied the temperature dependence of low-field magnetoresistance andcurrent-voltage characteristics of a low-angle bi-crystal grain boundaryjunction in perovskite manganite La2/3Sr1/3MnO3 thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(162756, 162757)
 We have studied the temperature dependence of low-field magnetoresistance andcurrent-voltage characteristics of a low-angle bi-crystal grain boundaryjunction in perovskite manganite La2/3Sr1/3MnO3 thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(162760, 162762)
 We have studied the temperature dependence of low-field magnetoresistance andcurrent-voltage characteristics of a low-angle bi-crystal grain boundaryjunction in perovskite manganite La2/3Sr1/3MnO3 thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(162822, 162822)
 With the use of the relation MGB propto M<missing VAR>bulksqrtMR wehave extracted the grain boundary magnetization.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(162885, 162885)
 Further, we demonstrate thatthe built-in potential barrier of the grain boundary can be modelled byVbipropto M<missing VAR>bulk2 - MGB2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(162897, 162898)
 Further, we demonstrate thatthe built-in potential barrier of the grain boundary can be modelled byVbipropto M<missing VAR>bulk2 - MGB2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163010, 163010)
 Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is anattractive alternative to current random access memory technologies due to itsnon-volatility, fast operation and high endurance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[453.0, 70, '%', 6]

S
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163064, 163064)
 STT-MRAM<missing VAR> does though havelimitations including the stochastic nature of the STT-switching and a highcritical switching current, which makes it unsuitable for ultrafast operationat nanosecond and sub-nanosecond regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 70, '%', 5]

S
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163094, 163094)
 STT-MRAM<missing VAR> does though havelimitations including the stochastic nature of the STT-switching and a highcritical switching current, which makes it unsuitable for ultrafast operationat nanosecond and sub-nanosecond regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 70, '%', 5]

SO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163149, 163150)
 Spin-orbit torque (SOT) switching,which relies on the torque generated by an in-plane current, has the potentialto overcome these limitations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 70, '%', 4]

SO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163200, 163201)
 However, SOT-MRAM<missing VAR> cells studied so far use athree-terminal structure in order to apply the in-plane current, whichincreases the size of the cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 70, '%', 3]

SO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163273, 163274)
 Here we report a two-terminal SOT-MRAM<missing VAR> cellbased on a CoFeB/MgO magnetic tunnel junction pillar on an ultrathin and narrowTa underlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 70, '%', 2]

CoFeB/MgO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163291, 163296)
 Here we report a two-terminal SOT-MRAM<missing VAR> cellbased on a CoFeB/MgO magnetic tunnel junction pillar on an ultrathin and narrowTa underlayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[167.0, 70, '%', 2]

Ta
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163317, 163317)
 Here we report a two-terminal SOT-MRAM<missing VAR> cellbased on a CoFeB/MgO magnetic tunnel junction pillar on an ultrathin and narrowTa underlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 70, '%', 2]

In
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163322, 163322)
 In this device, an in-plane and out-of-plane current aresimultaneously generated upon application of a voltage, and we demonstrate thatthe switching mechanism is dominated by SOT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 70, '%', 1]

SO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163384, 163385)
 In this device, an in-plane and out-of-plane current aresimultaneously generated upon application of a voltage, and we demonstrate thatthe switching mechanism is dominated by SOT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 70, '%', 1]

S
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163404, 163404)
 We also compare our device to aSTT-MRAM<missing VAR> cell built with the same architecture and show that critical writecurrent in the SOT-MRAM<missing VAR> cell is reduced by more than 70%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 70, '%', 0]

SO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(163442, 163443)
 We also compare our device to aSTT-MRAM<missing VAR> cell built with the same architecture and show that critical writecurrent in the SOT-MRAM<missing VAR> cell is reduced by more than 70%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 70, '%', 0]

In
###Theory of spin-polarized bipolar transport in magnetic p-n junctions|Jaroslav Fabian,Igor Zutic,S. Das Sarma###
(163535, 163535)
In particular, the theory of spin-polarized bipolar transport in magnetic p-njunctions is formulated, generalizing the classic Shockley model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Theory of spin-polarized bipolar transport in magnetic p-n junctions|Jaroslav Fabian,Igor Zutic,S. Das Sarma###
(163811, 163811)
 The carrier and spindensity and current profiles in the bulk regions are calculated and the I-Vcharacteristics of the junction are obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Theory of spin-polarized bipolar transport in magnetic p-n junctions|Jaroslav Fabian,Igor Zutic,S. Das Sarma###
(163813, 163813)
 The carrier and spindensity and current profiles in the bulk regions are calculated and the I-Vcharacteristics of the junction are obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Theory of spin-polarized bipolar transport in magnetic p-n junctions|Jaroslav Fabian,Igor Zutic,S. Das Sarma###
(164014, 164015)
 Implications ofthe theory for majority spin injection across the depletion layer, minorityspin pumping and spin amplification, giant magnetoresistance, spin-voltaiceffect, biasing electrode spin injection, and magnetic drift in the bulkregions are discussed in details, and illustrated using the example of a GaAsbased magnetic p-n junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(164156, 164159)
 The TMR originates from thesymmetry-driven spin filtering provided by the insulating BaTiO3 barrier to theelectrons injected from SrRuO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(164174, 164177)
 The TMR originates from thesymmetry-driven spin filtering provided by the insulating BaTiO3 barrier to theelectrons injected from SrRuO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(164180, 164180)
 In contrast the TER is possible only when athin SrTiO3 layer is intercalated at one of the SrRuO3/BaTiO3 interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(164203, 164206)
 In contrast the TER is possible only when athin SrTiO3 layer is intercalated at one of the SrRuO3/BaTiO3 interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3/BaTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(164222, 164230)
 In contrast the TER is possible only when athin SrTiO3 layer is intercalated at one of the SrRuO3/BaTiO3 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

As
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(164235, 164235)
 Asthe complex band-structure of SrTiO3 has the same symmetry than that of BaTiO3,the inclusion of such an intercalated layer does not negatively alter the TMRand in fact increases it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(164248, 164251)
 Asthe complex band-structure of SrTiO3 has the same symmetry than that of BaTiO3,the inclusion of such an intercalated layer does not negatively alter the TMRand in fact increases it.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(164267, 164270)
 Asthe complex band-structure of SrTiO3 has the same symmetry than that of BaTiO3,the inclusion of such an intercalated layer does not negatively alter the TMRand in fact increases it.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(164344, 164347)
 Crucially, the magnitude of the TER also scales withthe thickness of the SrTiO3 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(164354, 164357)
 The SrTiO3 thickness becomes then a singlecontrol parameter for both the TMR and the TER effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K1-xV3Sb5
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(164454, 164461)
Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Fe3Sn2
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(164560, 164563)
 Kagome nets are of particular importance since thediscovery of geometrically frustrated magnetism and topological band structuresin crystals like Herbertsmithite and Fe3Sn2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KV3Sb5
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(164569, 164573)
 KV3Sb5 wasdiscovered to be a layered topological metal with a Kagome net of vanadium.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K1-xV3Sb5
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(164624, 164631)
Here, we fabricated Josephson Junctions (JJ) of K1-xV3Sb5 and inducedsuperconductivity over long junction lengths.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

K1-xV3Sb5
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(164759, 164766)
 These results indicate an anisotropicinternal magnetic field in K1-xV3Sb5 which influences the superconductingcoupling in the junction, possibly giving rise to spin-tripletsuperconductivity.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

In
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(164802, 164802)
 In addition, the observation of long-lived fast oscillationsshows evidence of spatially localized conducting channels arising from edgestates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(164998, 164998)
 The conductance at the parallel (textbfP)configuration can be much bigger than that at the antiparallel (textbfAP)configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(165025, 165025)
 The conductance at the parallel (textbfP)configuration can be much bigger than that at the antiparallel (textbfAP)configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(165035, 165035)
 Compared textbfP with textbfAP configuration, there existsa shift of phase which can be tuned by gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(165041, 165041)
 Compared textbfP with textbfAP configuration, there existsa shift of phase which can be tuned by gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(165102, 165102)
 We find that the exchangefield weakly affects the conductance of carriers for textbfP configurationbut can dramatically suppress the conductance of carriers for textbfAPconfiguration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(165127, 165127)
 We find that the exchangefield weakly affects the conductance of carriers for textbfP configurationbut can dramatically suppress the conductance of carriers for textbfAPconfiguration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(165178, 165178)
 In addition, we find that there is aFabry-Perot-like electron interference.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electron-electron interaction effects on transport through mesoscopic superconducting hybrid junctions|Arijit Saha###
(165297, 165297)
 In this review we are going to describe the physicsof systems containing normal metal-superconductor interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electron-electron interaction effects on transport through mesoscopic superconducting hybrid junctions|Arijit Saha###
(165353, 165353)
 In particular, we describethe effects of electron electron interaction on transport through suchsuperconducting junction of multiple one-dimensional quantum wires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electron-electron interaction effects on transport through mesoscopic superconducting hybrid junctions|Arijit Saha###
(165436, 165436)
In this review, from the application point of view, we also demonstrate thepossible scenarios for production of pure spin current and large tunnellingmagnetoresistance in such hybrid junctions and analyze the influence ofelectron-electron interaction on the stability of the production of pure spincurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(165644, 165644)
 B 55, 1142 (1997)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 55, ',', 0],[119.0, 78, ',', 6],[246.0, 62, ',', 11]

C
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(165734, 165734)
 Quantum interference effects similar tothose occurring in normal tunnel junctions explain magnetoresistanceoscillations of a CD<missing VAR>W pierced by nanoholes [Latyshev et al.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 55, ',', 2],[29.0, 78, ',', 4],[156.0, 62, ',', 9]

W
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(165736, 165736)
 Quantum interference effects similar tothose occurring in normal tunnel junctions explain magnetoresistanceoscillations of a CD<missing VAR>W pierced by nanoholes [Latyshev et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 55, ',', 2],[27.0, 78, ',', 4],[154.0, 62, ',', 9]

C
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(165866, 165866)
 The effect is within the same trend asrandom matrix theory for normal metal-CD<missing VAR>W hybrids [Visscher et al.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 55, ',', 8],[103.0, 78, ',', 2],[24.0, 62, ',', 3]

W
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(165868, 165868)
 The effect is within the same trend asrandom matrix theory for normal metal-CD<missing VAR>W hybrids [Visscher et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 55, ',', 8],[105.0, 78, ',', 2],[22.0, 62, ',', 3]

B
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(165888, 165888)
B 62, 6873 (2000)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 55, ',', 11],[125.0, 78, ',', 5],[2.0, 62, ',', 0]

W
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166015, 166015)
 Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2000, '%', 2],[240.0, 20, '%', 4]

Fe3GeTe2
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166039, 166043)
 Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 2000, '%', 2],[212.0, 20, '%', 4]

Te2/Fe3GeTe2
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166046, 166053)
 Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[97.0, 2000, '%', 2],[202.0, 20, '%', 4]

Pt
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166060, 166060)
 Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2000, '%', 2],[195.0, 20, '%', 4]

Pd
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166063, 166063)
 Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2000, '%', 2],[192.0, 20, '%', 4]

(CPP)
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166130, 166134)
 Theballistic conductance, magnetoresistance (MR) and resistance-area product (R<missing VAR>A)have been calculated in a current-perpendicular-to-plane (CPP) geometry.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2000, '%', 1],[121.0, 20, '%', 3]

W
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166184, 166184)
 Agiant magnetoresistance of around 2000% and R<missing VAR>A less than 0.3 Omega mum<missing VAR>2have been found in the proposed vdW CPP GMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2000, '%', 0],[71.0, 20, '%', 2]

CPP
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166186, 166188)
 Agiant magnetoresistance of around 2000% and R<missing VAR>A less than 0.3 Omega mum<missing VAR>2have been found in the proposed vdW CPP GMR.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2000, '%', 0],[67.0, 20, '%', 2]

In
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166195, 166195)
 In addition, the spin-orbitcoupling effect on transport and anisotropy magnetoresistance (AMR) has alsobeen investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2000, '%', 1],[60.0, 20, '%', 1]

Fe3GeTe2
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166261, 166265)
 The calculated AMR is found to be around 20% inFe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2000, '%', 2],[6.0, 20, '%', 0]

PdTe2/Fe3GeTe2
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166269, 166277)
 The calculated AMR is found to be around 20% inFe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[119.0, 2000, '%', 2],[14.0, 20, '%', 0]

CPP
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166279, 166281)
 The calculated AMR is found to be around 20% inFe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 2000, '%', 2],[24.0, 20, '%', 0]

W
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166307, 166307)
 Both GMR and AMR in the proposed vdWCPP GMR mainly originate from the bulk electronic structure properties ofFe3GeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 2000, '%', 3],[52.0, 20, '%', 1]

CPP
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166310, 166312)
 Both GMR and AMR in the proposed vdWCPP GMR mainly originate from the bulk electronic structure properties ofFe3GeTe2.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2000, '%', 3],[55.0, 20, '%', 1]

Fe3GeTe2
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166337, 166341)
 Both GMR and AMR in the proposed vdWCPP GMR mainly originate from the bulk electronic structure properties ofFe3GeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2000, '%', 3],[82.0, 20, '%', 1]

W
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166353, 166353)
 This work demonstrates a vdW CPP GMR with superior advantagesincluding perpendicular magnetic anisotropy, large GMR, low R<missing VAR>A as well assizable AMR may stimulate future experimental explorations and should beappealing for their applications in spintronic devices including magneticsensor and memory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2000, '%', 4],[98.0, 20, '%', 2]

CPP
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(166355, 166357)
 This work demonstrates a vdW CPP GMR with superior advantagesincluding perpendicular magnetic anisotropy, large GMR, low R<missing VAR>A as well assizable AMR may stimulate future experimental explorations and should beappealing for their applications in spintronic devices including magneticsensor and memory.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2000, '%', 4],[100.0, 20, '%', 2]

MnAs
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(166467, 166468)
Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 49, '%', 3],[152.0, 44, '%', 3]

MnAs
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(166506, 166507)
 We use point contact Andreev reflection spin spectroscopy to measure thetransport spin polarization of MnAs epitaxial films grown on (001) GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 49, '%', 2],[113.0, 44, '%', 2]

GaAs
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(166521, 166522)
 We use point contact Andreev reflection spin spectroscopy to measure thetransport spin polarization of MnAs epitaxial films grown on (001) GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 49, '%', 2],[98.0, 44, '%', 2]

B
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(166640, 166640)
 A ballistic transport spin polarization of approximately 49% and 44% isobtained for the type A and type B orientations of MnAs, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 49, '%', 0],[20.0, 44, '%', 0]

MnAs
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(166646, 166647)
 A ballistic transport spin polarization of approximately 49% and 44% isobtained for the type A and type B orientations of MnAs, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 49, '%', 0],[26.0, 44, '%', 0]

MnAs/AlAs
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(166694, 166698)
 Thesemeasurements are consistent with our density functional calculations, and withrecent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)Astunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[79.0, 49, '%', 1],[74.0, 44, '%', 1]

Ga
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(166701, 166701)
 Thesemeasurements are consistent with our density functional calculations, and withrecent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)Astunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 49, '%', 1],[81.0, 44, '%', 1]

Mn
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(166703, 166703)
 Thesemeasurements are consistent with our density functional calculations, and withrecent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)Astunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 49, '%', 1],[83.0, 44, '%', 1]

As
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(166705, 166705)
 Thesemeasurements are consistent with our density functional calculations, and withrecent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)Astunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 49, '%', 1],[85.0, 44, '%', 1]

I
###Pseudospin-valve effect on transport in junctions of three-dimensional topological insulator surfaces|Sthitadhi Roy,Krishanu Roychowdhury,Sourin Das###
(166854, 166854)
 To put this claim on firm footing, we present results for T<missing VAR>I surfacesperpendicular to the crystal growth axis, which clearly show that the tunnelingconductance between two such T<missing VAR>I surfaces of the same T<missing VAR>I material is dominatedby this half metallic behavior leading to physics reminiscent of a spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 3, 'D', 1]

I
###Pseudospin-valve effect on transport in junctions of three-dimensional topological insulator surfaces|Sthitadhi Roy,Krishanu Roychowdhury,Sourin Das###
(166894, 166894)
 To put this claim on firm footing, we present results for T<missing VAR>I surfacesperpendicular to the crystal growth axis, which clearly show that the tunnelingconductance between two such T<missing VAR>I surfaces of the same T<missing VAR>I material is dominatedby this half metallic behavior leading to physics reminiscent of a spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 3, 'D', 1]

I
###Pseudospin-valve effect on transport in junctions of three-dimensional topological insulator surfaces|Sthitadhi Roy,Krishanu Roychowdhury,Sourin Das###
(166905, 166905)
 To put this claim on firm footing, we present results for T<missing VAR>I surfacesperpendicular to the crystal growth axis, which clearly show that the tunnelingconductance between two such T<missing VAR>I surfaces of the same T<missing VAR>I material is dominatedby this half metallic behavior leading to physics reminiscent of a spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 3, 'D', 1]

I
###Pseudospin-valve effect on transport in junctions of three-dimensional topological insulator surfaces|Sthitadhi Roy,Krishanu Roychowdhury,Sourin Das###
(166980, 166980)
Further using the generalized tunnel magnetoresistance derived in this work wealso study the tunneling current between arbitrary T<missing VAR>I surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 3, 'D', 2]

Cu/Co/Cu/Co/Cu
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(167155, 167163)
 Junctions investigated all have Cu/Co/Cu/Co/Cu as core layerstacks.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[179.0, 71, ',', 6]

Pt
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(167205, 167205)
 Two types of such junctions are compared, one with the core stacksandwiched between Pt layers (type A), the other with Pt only on one side ofthe stack (type B).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 71, ',', 5]

Pt
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(167222, 167222)
 Two types of such junctions are compared, one with the core stacksandwiched between Pt layers (type A), the other with Pt only on one side ofthe stack (type B).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 71, ',', 5]

B
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(167242, 167242)
 Two types of such junctions are compared, one with the core stacksandwiched between Pt layers (type A), the other with Pt only on one side ofthe stack (type B).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 71, ',', 5]

B
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(167339, 167339)
 B71, 140403(R) (2005)], is present in B samples only.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 71, ',', 0]

B
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(167362, 167362)
 B71, 140403(R) (2005)], is present in B samples only.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 71, ',', 0]

As
###Scattering theory of magnetic/superconducting junctions with spin active interfaces|F. Romeo,R. Citro###
(167557, 167557)
 As a specificapplication of the theory, we analyze the conductance, the magnetoresistanceand the generation of spin-torque produced by an applied voltage in aspin-valve system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Studying angle-dependent magnetoresistance oscillations of cuprate superconductors in a model with antiferromagnetic reconstruction and magnetic breakdown|Sylvia K. Lewin,James G. Analytis###
(167720, 167720)
 We calculate angle-dependent magnetoresistance oscillations (AMRO) forinterlayer transport of cuprate superconductors in the presence of (pi,pi)order.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Studying angle-dependent magnetoresistance oscillations of cuprate superconductors in a model with antiferromagnetic reconstruction and magnetic breakdown|Sylvia K. Lewin,James G. Analytis###
(167895, 167895)
 This work paves the way for the use of AMRO as a tool to distinguishdifferent kinds of ordered states.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(167953, 167953)
 Coherent spin transport through bilayer graphene (BLG) nanoflakes sandwichedbetween two electrodes made of single-layer zigzag graphene nanoribbon wasinvestigated by means of Landauer-Buttiker formalism.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 6, '%', 2]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(168016, 168016)
 Application of a magneticfield only on BLG structure as a channel produces a perfect spin polarizationin a large energy region.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 6, '%', 1]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(168081, 168081)
 Moreover, the conductance could be strongly modulatedby magnetization of the zigzag edge of AB-stacked BLG, and the junction,entirely made of carbon, produces a giant magnetoresistance (GMR) up to106%.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 6, '%', 0]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(168085, 168085)
 Moreover, the conductance could be strongly modulatedby magnetization of the zigzag edge of AB-stacked BLG, and the junction,entirely made of carbon, produces a giant magnetoresistance (GMR) up to106%.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 6, '%', 0]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(168154, 168154)
 Intestinally, GMR and spin polarization could be tuned by varying BLGwidth and length.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 6, '%', 1]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(168177, 168177)
 Generally, MR in a AB-stacked BLG strongly increases(decreases) with length (width).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 6, '%', 2]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(168181, 168181)
 Generally, MR in a AB-stacked BLG strongly increases(decreases) with length (width).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 6, '%', 2]

As
###Spin superfluid Josephson oscillator|Yizhou Liu,Igor Barsukov,Ilya Krivorotov,Yafis Barlas,Roger K. Lake###
(168911, 168911)
 As an experimentalcharacterization method, electrical measurements of spin superfluid Josephsonjunctions can provide additional signatures of spin superfluidity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(169062, 169062)
 We examinea Josephson junction of such a system, based on the dilute magnetic topologicalinsulator (Hg,Mn)Te and the type II superconductor MoRe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(169064, 169064)
 We examinea Josephson junction of such a system, based on the dilute magnetic topologicalinsulator (Hg,Mn)Te and the type II superconductor MoRe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(169066, 169066)
 We examinea Josephson junction of such a system, based on the dilute magnetic topologicalinsulator (Hg,Mn)Te and the type II superconductor MoRe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(169074, 169075)
 We examinea Josephson junction of such a system, based on the dilute magnetic topologicalinsulator (Hg,Mn)Te and the type II superconductor MoRe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoRe
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(169079, 169080)
 We examinea Josephson junction of such a system, based on the dilute magnetic topologicalinsulator (Hg,Mn)Te and the type II superconductor MoRe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(169083, 169083)
 In the zero and verylow field limit, to the best of our knowledge, the device shows, for the firsttime, induced supercurrent through a magnetically doped semiconductor, in thiscase a topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(169160, 169160)
 At higher fields, a rich and hystereticmagnetoresistance is revealed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoSi2/TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(169990, 169996)
Observation of triplet superconductivity in CoSi2/TiSi2 heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[109.0, 1.5, 'K', 3]

CoSi2/TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(170063, 170069)
 Here we report our observation of triplet superconductivity innonmagnetic CoSi2/TiSi2 heterostructures on silicon.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 1.5, 'K', 1]

CoSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(170078, 170080)
 CoSi2 undergoes asharp superconducting transition at a critical temperature Tc approx 1.5 K,while TiSi2 is a normal metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1.5, 'K', 0]

TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(170111, 170113)
 CoSi2 undergoes asharp superconducting transition at a critical temperature Tc approx 1.5 K,while TiSi2 is a normal metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1.5, 'K', 0]

CoSi2/TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(170141, 170147)
 We investigate conductance spectra of bothtwo-terminal CoSi2/TiSi2 tunnel junctions and three-terminal T<missing VAR>-shapedCoSi2/TiSi2 superconducting proximity structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 1.5, 'K', 1]

CoSi2/TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(170164, 170170)
 We investigate conductance spectra of bothtwo-terminal CoSi2/TiSi2 tunnel junctions and three-terminal T<missing VAR>-shapedCoSi2/TiSi2 superconducting proximity structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[59.0, 1.5, 'K', 1]

CoSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(170198, 170200)
 We report anunexpectedly large spin-orbit coupling in CoSi2 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1.5, 'K', 2]

CoSi2/TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(170340, 170346)
 These three independent and complementaryobservations are indicative of chiral p<missing VAR>-wave pairing in CoSi2/TiSi2heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[235.0, 1.5, 'K', 4]

CoSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(170373, 170375)
 This chiral triplet superconductivity and the excellentfabrication compatibility of CoSi2 and TiSi2 with present-day siliconintegrated-circuit technology facilitate full scalability for potential use inquantum-computing devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 1.5, 'K', 5]

TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(170379, 170381)
 This chiral triplet superconductivity and the excellentfabrication compatibility of CoSi2 and TiSi2 with present-day siliconintegrated-circuit technology facilitate full scalability for potential use inquantum-computing devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 1.5, 'K', 5]

W
###Competing magnetic anisotropies in atomic-scale junctions|Alexander Thiess,Yuriy Mokrousov,Stefan Heinze###
(170498, 170498)
 Upon stretching monatomic chains of W, Ir, and Ptsuspended between two leads, we find the development of strong magnetism andlarge values of the magnetocrystalline anisotropy energy (MAE) of up to 30 meVper chain atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 5, 'd', 1],[62.0, 30, 'meV', 0]

Ir
###Competing magnetic anisotropies in atomic-scale junctions|Alexander Thiess,Yuriy Mokrousov,Stefan Heinze###
(170501, 170501)
 Upon stretching monatomic chains of W, Ir, and Ptsuspended between two leads, we find the development of strong magnetism andlarge values of the magnetocrystalline anisotropy energy (MAE) of up to 30 meVper chain atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 5, 'd', 1],[59.0, 30, 'meV', 0]

Pt
###Competing magnetic anisotropies in atomic-scale junctions|Alexander Thiess,Yuriy Mokrousov,Stefan Heinze###
(170506, 170506)
 Upon stretching monatomic chains of W, Ir, and Ptsuspended between two leads, we find the development of strong magnetism andlarge values of the magnetocrystalline anisotropy energy (MAE) of up to 30 meVper chain atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 5, 'd', 1],[54.0, 30, 'meV', 0]

S
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(170772, 170772)
 We theoretically study spin-transfer torque (STT) in a graphene system withspin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(170794, 170798)
 We theoretically study spin-transfer torque (STT) in a graphene system withspin-orbit coupling (SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F)
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(170836, 170838)
 We consider a graphene-based junction where thespin-orbit coupled region is sandwiched between two ferromagnetic (F) segments.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(170880, 170882)
 Our results show that the presence of SOC results inanisotropically modified STT, magnetoresistance, and charge conductance as afunction of relative magnetization misalignment in the F regions.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(170893, 170893)
 Our results show that the presence of SOC results inanisotropically modified STT, magnetoresistance, and charge conductance as afunction of relative magnetization misalignment in the F regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(170926, 170926)
 Our results show that the presence of SOC results inanisotropically modified STT, magnetoresistance, and charge conductance as afunction of relative magnetization misalignment in the F regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(170988, 170988)
 We have foundthat within the Klein regime, where particles hit the interfacesperpendicularly, the spin-polarized Dirac fermions transmit perfectly throughthe boundaries of an F-F junction (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(170990, 170990)
 We have foundthat within the Klein regime, where particles hit the interfacesperpendicularly, the spin-polarized Dirac fermions transmit perfectly throughthe boundaries of an F-F junction (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(171028, 171028)
, with zero reflection), regardless ofthe relative magnetization misalignment and exert zero STT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(171033, 171033)
 In the presence ofSOC, however, due to band structure modification, a nonzero STT reappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(171042, 171044)
 In the presence ofSOC, however, due to band structure modification, a nonzero STT reappears.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(171065, 171065)
 In the presence ofSOC, however, due to band structure modification, a nonzero STT reappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(171093, 171095)
 Ourfindings can be exploited for experimentally examining proximity-induced SOCinto a graphene system<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Tunable magnetoresistance in an asymmetrically coupled single molecule junction|Ben Warner,Fadi El Hallak,Henning Prüser,John Sharp,Mats Persson,Andrew J. Fisher,Cyrus F. Hirjibehedin###
(171343, 171343)
 The negative differential resistance is caused bytransient charging of an iron phthalocyanine (FePc) molecule on a single layerof copper nitride (Cu2N) on a Cu(001) surface, and occurs at voltagescorresponding to the alignment of sharp resonances in the filled and emptymolecular states with the Cu(001) Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Cu2N)
###Tunable magnetoresistance in an asymmetrically coupled single molecule junction|Ben Warner,Fadi El Hallak,Henning Prüser,John Sharp,Mats Persson,Andrew J. Fisher,Cyrus F. Hirjibehedin###
(171364, 171368)
 The negative differential resistance is caused bytransient charging of an iron phthalocyanine (FePc) molecule on a single layerof copper nitride (Cu2N) on a Cu(001) surface, and occurs at voltagescorresponding to the alignment of sharp resonances in the filled and emptymolecular states with the Cu(001) Fermi energy.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Asymmetric scattering of Dirac electrons and holes in graphene|Atikur Rahman,Janice Wynn Guikema,Nina Markovic###
(171952, 171952)
At larger carrier densities, the amplitude of the noise depends strongly on thesign of the impurity charge, reflecting the fact that the electrons and theholes are scattered by the impurity potential in an asymmetric manner.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(172047, 172052)
Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO0.5 buffer layer the effects of correlations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeO0.5
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(172062, 172064)
Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO0.5 buffer layer the effects of correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(172101, 172106)
 We report textitab initio simulations of quantum transport properties ofFe/MgO/Fe trilayer structures with FeO0.5 buffer iron oxide layer, whereon-site Coulomb interaction is explicitly taken into account by local densityapproximation  Hubbard textitU approach.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeO0.5
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(172114, 172116)
 We report textitab initio simulations of quantum transport properties ofFe/MgO/Fe trilayer structures with FeO0.5 buffer iron oxide layer, whereon-site Coulomb interaction is explicitly taken into account by local densityapproximation  Hubbard textitU approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(172161, 172161)
 We report textitab initio simulations of quantum transport properties ofFe/MgO/Fe trilayer structures with FeO0.5 buffer iron oxide layer, whereon-site Coulomb interaction is explicitly taken into account by local densityapproximation  Hubbard textitU approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(172275, 172275)
 We present an understanding of microscopicdetails of this phenomenon, connecting it to localization of the Fermielectrons of particular symmetry, which takes place in the buffer Fe-O layer,when on-site Coulomb repulsion is introduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(172277, 172277)
 We present an understanding of microscopicdetails of this phenomenon, connecting it to localization of the Fermielectrons of particular symmetry, which takes place in the buffer Fe-O layer,when on-site Coulomb repulsion is introduced.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(172325, 172325)
 We further study the possibleinfluence of the symmetry reduction in the buffer Fe-O layer on the transportproperties of the Fe/MgO/Fe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(172327, 172327)
 We further study the possibleinfluence of the symmetry reduction in the buffer Fe-O layer on the transportproperties of the Fe/MgO/Fe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(172344, 172349)
 We further study the possibleinfluence of the symmetry reduction in the buffer Fe-O layer on the transportproperties of the Fe/MgO/Fe interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(172402, 172402)
 The magnetoresistance of thin superconducting strips subject to aperpendicular magnetic field B and low temperatures T<missing VAR> manifests a sequence ofalternating superconductor-insulator transitions (SIT).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1, 'D', 2],[214.0, 0, ',', 3]

SI
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(172430, 172431)
 The magnetoresistance of thin superconducting strips subject to aperpendicular magnetic field B and low temperatures T<missing VAR> manifests a sequence ofalternating superconductor-insulator transitions (SIT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1, 'D', 2],[185.0, 0, ',', 3]

SC
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(172489, 172490)
 We study thisphenomenon within a quasi one-dimensional (1D) model for the quantum dynamicsof vortices in a line-junction between coupled parallel SC wires, at parametersclose to their SIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1, 'D', 1],[126.0, 0, ',', 2]

SI
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(172506, 172507)
 We study thisphenomenon within a quasi one-dimensional (1D) model for the quantum dynamicsof vortices in a line-junction between coupled parallel SC wires, at parametersclose to their SIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 1, 'D', 1],[109.0, 0, ',', 2]

B
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(172537, 172537)
 Mapping the vortex system to 1D Fermions at a chemicalpotential dictated by B, we find that a quantum phase transition of the Isingtype occurs at critical values of the vortex filling, from a SC phase nearinteger filling to an insulator near 1/2-filling.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1, 'D', 0],[79.0, 0, ',', 1]

SC
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(172584, 172585)
 Mapping the vortex system to 1D Fermions at a chemicalpotential dictated by B, we find that a quantum phase transition of the Isingtype occurs at critical values of the vortex filling, from a SC phase nearinteger filling to an insulator near 1/2-filling.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1, 'D', 0],[31.0, 0, ',', 1]

(B)
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(172627, 172629)
 For T<missing VAR>->0, the resultingmagnetoresistance R<missing VAR>(B) exhibits oscillations similar to the experimentalobservation.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 1, 'D', 1],[11.0, 0, ',', 0]

In
###Large magnetoresistance from long-range interface coupling in armchair graphene nanoribbon junctions|Suchun Li,Young-Woo Son,Su Ying Quek###
(172680, 172680)
 In recent years, bottom-up synthesis procedures have achieved significantadvancements in atomically-controlled growth of several-nanometer-long graphenenanoribbons with armchair-shaped edges (AG<missing VAR>NRs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 900, '%', 2]

N
###Large magnetoresistance from long-range interface coupling in armchair graphene nanoribbon junctions|Suchun Li,Young-Woo Son,Su Ying Quek###
(172736, 172736)
 In recent years, bottom-up synthesis procedures have achieved significantadvancements in atomically-controlled growth of several-nanometer-long graphenenanoribbons with armchair-shaped edges (AG<missing VAR>NRs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 900, '%', 2]

N
###Large magnetoresistance from long-range interface coupling in armchair graphene nanoribbon junctions|Suchun Li,Young-Woo Son,Su Ying Quek###
(172768, 172768)
 This greatly encourages us toexplore the potential of such well-defined AG<missing VAR>NRs in electronics andspintronics.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 900, '%', 1]

Os
###An analytically solvable model of the effect of magnetic breakdown on angle-dependent magnetoresistance in a quasi-two-dimensional metal|Andrzej Nowojewski,Paul A. Goddard,Stephen J. Blundell###
(173082, 173082)
 We have developed an analytical model of angle-dependent magnetoresistanceoscillations (AMROs) in a quasi-two-dimensional metal in which magneticbreakdown occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu(NCS)2
###An analytically solvable model of the effect of magnetic breakdown on angle-dependent magnetoresistance in a quasi-two-dimensional metal|Andrzej Nowojewski,Paul A. Goddard,Stephen J. Blundell###
(173196, 173202)
 The model takes account of all the contributions fromquasiparticles undergoing both magnetic breakdown and Bragg reflection at eachjunction and allows extremely efficient simulation of data which can becompared with recent experimental results on the organic metalkappa-ET2Cu(NCS)2.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###An analytically solvable model of the effect of magnetic breakdown on angle-dependent magnetoresistance in a quasi-two-dimensional metal|Andrzej Nowojewski,Paul A. Goddard,Stephen J. Blundell###
(173208, 173208)
 AMROs resulting from both closed and open orbits emergenaturally at low field, and the model enables the transition to breakdown-AMROswith increasing field to be described in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###An analytically solvable model of the effect of magnetic breakdown on angle-dependent magnetoresistance in a quasi-two-dimensional metal|Andrzej Nowojewski,Paul A. Goddard,Stephen J. Blundell###
(173255, 173255)
 AMROs resulting from both closed and open orbits emergenaturally at low field, and the model enables the transition to breakdown-AMROswith increasing field to be described in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(173295, 173298)
Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(173306, 173306)
Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(173310, 173313)
Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SNS)
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(173339, 173343)
 We report magnetoresistance measurements of ramp typesuperconductor-normal-superconductor (SNS) junctions.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(173359, 173364)
 The junctions consist ofunderdoped YBa2Cu3Oy<missing VAR> (YBCO) electrodes separated by a barrier ofYBa2Cu2.6Ga0.4Oy<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(YBCO)
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(173367, 173372)
 The junctions consist ofunderdoped YBa2Cu3Oy<missing VAR> (YBCO) electrodes separated by a barrier ofYBa2Cu2.6Ga0.4Oy<missing VAR>.
Featurization successful!
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu2.6Ga0.4O
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(173387, 173394)
 The junctions consist ofunderdoped YBa2Cu3Oy<missing VAR> (YBCO) electrodes separated by a barrier ofYBa2Cu2.6Ga0.4Oy<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.37142857142857144,0,0.05714285714285715,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO/N/YBCO
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(173466, 173476)
 Our results indicate that inunderdoped YBCO/N/YBCO SNS structures, the proximity effect does not exhibitthe anomalously long range found in optimally doped YBCO structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SNS
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(173478, 173480)
 Our results indicate that inunderdoped YBCO/N/YBCO SNS structures, the proximity effect does not exhibitthe anomalously long range found in optimally doped YBCO structures.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(173514, 173517)
 Our results indicate that inunderdoped YBCO/N/YBCO SNS structures, the proximity effect does not exhibitthe anomalously long range found in optimally doped YBCO structures.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(173554, 173557)
 From ourdata we obtain the diffusion coefficient and relaxation time of quasiparticlesin underdoped YBCO.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Controllable generation of a spin-triplet supercurrent in a Josephson spin-valve|Adrian Iovan,Taras Golod,Vladimir M. Krasnov###
(173652, 173652)
 In thiswork we study experimentally nano-scale devices, in which a ferromagnetic spinvalve is embedded into a Josephson junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(173874, 173874)
Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors Spin drift effect in the inversion channel and spin relaxation in the n<missing VAR>-Si source/drain regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 99, ',', 4]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(173918, 173918)
Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors Spin drift effect in the inversion channel and spin relaxation in the n<missing VAR>-Si source/drain regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 99, ',', 4]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(173964, 173964)
 We have experimentally and theoretically investigated the electron spintransport and spin distribution at room temperature in a Si two-dimensional(2D) inversion channel of back-gate-type spin metal-oxide-semiconductorfield-effect transistors (spin M<missing VAR>OSFE<missing VAR>Ts).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 99, ',', 3]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(174007, 174009)
 We have experimentally and theoretically investigated the electron spintransport and spin distribution at room temperature in a Si two-dimensional(2D) inversion channel of back-gate-type spin metal-oxide-semiconductorfield-effect transistors (spin M<missing VAR>OSFE<missing VAR>Ts).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 99, ',', 3]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(174029, 174031)
 The magnetoresistance ratio of thespin M<missing VAR>OSFET with a channel length of 0.4mum<missing VAR> was increased by a factor of 6from that in our previous paper [Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 99, ',', 2]

B
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(174083, 174083)
 B 99, 165301 (2019)] by loweringthe parasitic resistances at the source/drain junctions withhighly-phosphorus-doped n<missing VAR>-Si regions and by increasing the lateral electricfield in the channel along the electron transport, called spin drift.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 99, ',', 0]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(174127, 174127)
 B 99, 165301 (2019)] by loweringthe parasitic resistances at the source/drain junctions withhighly-phosphorus-doped n<missing VAR>-Si regions and by increasing the lateral electricfield in the channel along the electron transport, called spin drift.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 99, ',', 0]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(174194, 174196)
 ClearHanle signals with some oscillation peaks were observed for the spin M<missing VAR>OSFETwith a channel length of 10 mu m<missing VAR> under the lateral electric field,indicating that the effective spin diffusion length is dramatically enhanced bythe spin drift.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 99, ',', 1]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(174271, 174271)
 By taking into account the n<missing VAR>-Si regions and the spin drift inthe channel, one-dimensional analytic functions were derived for analyzing theeffect of the spin drift on the spin transport through the channel and thesefunctions were found to explain almost all the experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 99, ',', 2]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(174463, 174463)
 From thecalculated spin current and spin distribution, it was revealed that almost allthe spins are unflipped during the spin-drift-assisted transport through the0.4-mum<missing VAR>-long inversion channel, but the most part of the injected spins fromthe source electrode are relaxed in the n<missing VAR>-Si regions of both the source anddrain junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 99, ',', 3]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(174590, 174592)
Furthermore, we showed that the effective spin resistances that are introducedin this study are very helpful to understand how to improve themagnetoresistance ratio of spin M<missing VAR>OSFE<missing VAR>Ts for practical use.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[505.0, 99, ',', 5]

F
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175139, 175139)
 We have probed the interface of a ferromagnetic/semiconductor (FM<missing VAR>/SC)heterojunction by a combined high resolution photoemission spectroscopy andx<missing VAR>-ray photoelectron diffraction study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 10, 'monolayers', 7],[375.0, 1508, ';', 8]

C
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175143, 175143)
 We have probed the interface of a ferromagnetic/semiconductor (FM<missing VAR>/SC)heterojunction by a combined high resolution photoemission spectroscopy andx<missing VAR>-ray photoelectron diffraction study.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 10, 'monolayers', 7],[371.0, 1508, ';', 8]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175284, 175284)
 We show that the Fe contact with ZnSe induces a chemicalconversion of the ZnSe outermost atomic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 10, 'monolayers', 4],[230.0, 1508, ';', 5]

ZnSe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175290, 175291)
 We show that the Fe contact with ZnSe induces a chemicalconversion of the ZnSe outermost atomic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 10, 'monolayers', 4],[223.0, 1508, ';', 5]

ZnSe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175306, 175307)
 We show that the Fe contact with ZnSe induces a chemicalconversion of the ZnSe outermost atomic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 10, 'monolayers', 4],[207.0, 1508, ';', 5]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175345, 175345)
 The main driving force thatinduces this rearrangement is the requirement for a stable Fe-Se bonding at theinterface and a Se monolayer that floats at the Fe growth front.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 10, 'monolayers', 3],[169.0, 1508, ';', 4]

Se
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175347, 175347)
 The main driving force thatinduces this rearrangement is the requirement for a stable Fe-Se bonding at theinterface and a Se monolayer that floats at the Fe growth front.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 10, 'monolayers', 3],[167.0, 1508, ';', 4]

Se
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175362, 175362)
 The main driving force thatinduces this rearrangement is the requirement for a stable Fe-Se bonding at theinterface and a Se monolayer that floats at the Fe growth front.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 10, 'monolayers', 3],[152.0, 1508, ';', 4]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175374, 175374)
 The main driving force thatinduces this rearrangement is the requirement for a stable Fe-Se bonding at theinterface and a Se monolayer that floats at the Fe growth front.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 10, 'monolayers', 3],[140.0, 1508, ';', 4]

Zn
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175386, 175386)
 The releasedZn atoms are incorporated in substitution in the Fe lattice position.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 10, 'monolayers', 2],[128.0, 1508, ';', 3]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175402, 175402)
 The releasedZn atoms are incorporated in substitution in the Fe lattice position.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 10, 'monolayers', 2],[112.0, 1508, ';', 3]

ZnSe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175424, 175425)
 Thisformation process is independent of the ZnSe surface termination (Zn or Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 10, 'monolayers', 1],[89.0, 1508, ';', 2]

Zn
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175432, 175432)
 Thisformation process is independent of the ZnSe surface termination (Zn or Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 10, 'monolayers', 1],[82.0, 1508, ';', 2]

Se
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175436, 175436)
 Thisformation process is independent of the ZnSe surface termination (Zn or Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 10, 'monolayers', 1],[78.0, 1508, ';', 2]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175443, 175443)
The Fe valence-band evolution indicates that the d<missing VAR>-states at the Fermi levelshow up even at submonolayer Fe coverage but that the Fe bulk character is onlyrecovered above 10 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 10, 'monolayers', 0],[71.0, 1508, ';', 1]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175480, 175480)
The Fe valence-band evolution indicates that the d<missing VAR>-states at the Fermi levelshow up even at submonolayer Fe coverage but that the Fe bulk character is onlyrecovered above 10 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 10, 'monolayers', 0],[34.0, 1508, ';', 1]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175490, 175490)
The Fe valence-band evolution indicates that the d<missing VAR>-states at the Fermi levelshow up even at submonolayer Fe coverage but that the Fe bulk character is onlyrecovered above 10 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 10, 'monolayers', 0],[24.0, 1508, ';', 1]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175512, 175512)
 Indeed, the Fe 1508;1-band states,theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fejunctions, are strongly modified at the FM<missing VAR>/SC interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 10, 'monolayers', 1],[2.0, 1508, ';', 0]

Fe/ZnSe/Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175540, 175545)
 Indeed, the Fe 1508;1-band states,theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fejunctions, are strongly modified at the FM<missing VAR>/SC interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 10, 'monolayers', 1],[26.0, 1508, ';', 0]

F
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175561, 175561)
 Indeed, the Fe 1508;1-band states,theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fejunctions, are strongly modified at the FM<missing VAR>/SC interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 10, 'monolayers', 1],[47.0, 1508, ';', 0]

SC
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(175564, 175565)
 Indeed, the Fe 1508;1-band states,theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fejunctions, are strongly modified at the FM<missing VAR>/SC interface.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 10, 'monolayers', 1],[50.0, 1508, ';', 0]

Ni
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(175979, 175979)
Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 100, '%', 2],[152.0, 0, ',', 2]

Ni
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(175983, 175983)
Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 100, '%', 2],[148.0, 0, ',', 2]

Ni
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(176046, 176046)
 Using the nonequilibrium Green function formalism combined with densityfunctional theory, we study finite-bias quantum transport in Ni/Grn<missing VAR>/Nivertical heterostructures where n<missing VAR> graphene layers are sandwiched between twosemi-infinite Ni(111) electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 100, '%', 1],[85.0, 0, ',', 1]

Ni
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(176051, 176051)
 Using the nonequilibrium Green function formalism combined with densityfunctional theory, we study finite-bias quantum transport in Ni/Grn<missing VAR>/Nivertical heterostructures where n<missing VAR> graphene layers are sandwiched between twosemi-infinite Ni(111) electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 100, '%', 1],[80.0, 0, ',', 1]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(176125, 176125)
 We find that recently predicted pessimisticmagnetoresistance of 100% for n<missing VAR> ge 5 junctions at zero bias voltage Vb<missing VAR>rightarrow 0, persists up to Vb<missing VAR> simeq 0.4 V, which makes such devicespromising for spin-torque-based device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 100, '%', 0],[6.0, 0, ',', 0]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(176140, 176140)
 We find that recently predicted pessimisticmagnetoresistance of 100% for n<missing VAR> ge 5 junctions at zero bias voltage Vb<missing VAR>rightarrow 0, persists up to Vb<missing VAR> simeq 0.4 V, which makes such devicespromising for spin-torque-based device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 100, '%', 0],[9.0, 0, ',', 0]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(176147, 176147)
 We find that recently predicted pessimisticmagnetoresistance of 100% for n<missing VAR> ge 5 junctions at zero bias voltage Vb<missing VAR>rightarrow 0, persists up to Vb<missing VAR> simeq 0.4 V, which makes such devicespromising for spin-torque-based device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 100, '%', 0],[16.0, 0, ',', 0]

In
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(176174, 176174)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 100, '%', 1],[43.0, 0, ',', 1]

Ni
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(176190, 176190)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 100, '%', 1],[59.0, 0, ',', 1]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(176229, 176229)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 100, '%', 1],[98.0, 0, ',', 1]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(176234, 176234)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 100, '%', 1],[103.0, 0, ',', 1]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(176238, 176238)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 100, '%', 1],[107.0, 0, ',', 1]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(176245, 176245)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 100, '%', 1],[114.0, 0, ',', 1]

Ni
###Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets|O. M. Kapran,A. Iovan,T. Golod,V. M. Krasnov###
(176344, 176344)
Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets|O. M. Kapran,A. Iovan,T. Golod,V. M. Krasnov###
(176374, 176374)
 We study experimentally nanoscale Josephson junctions and Josephsonspin-valves containing strong Ni ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets|O. M. Kapran,A. Iovan,T. Golod,V. M. Krasnov###
(176412, 176414)
 We observe that in contrast tojunctions, spin valves with the same geometry exhibit anomalous Ic(H) patternswith two peaks separated by a dip.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets|O. M. Kapran,A. Iovan,T. Golod,V. M. Krasnov###
(176596, 176596)
 A quantitative analysis brings us to aconclusion that the triplet current in out Ni-based spin-valves isapproximately three times larger than the conventional singlet supercurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(176646, 176646)
Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 100, '%', 3]

Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(176650, 176650)
Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 100, '%', 3]

Fe/GaAs/Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(176682, 176687)
 We present it ab initio calculations of the spin-dependent electronictransport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situationof a spin-injection experiment.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[179.0, 100, '%', 2]

Fe/ZnSe/Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(176691, 176696)
 We present it ab initio calculations of the spin-dependent electronictransport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situationof a spin-injection experiment.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[170.0, 100, '%', 2]

B
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(176732, 176732)
 We follow a ballistic Landauer-Buttikerapproach for the calculation of the spin-dependent dc conductance in thelinear-responce regime, in the limit of zero temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 100, '%', 1]

In
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(176882, 176882)
 In particular we study the significance of thetransmission resonances caused by the presence of two interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 100, '%', 1]

CPP
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(177012, 177014)
 We present an all-Heusler architecture which could be used as a rationaldesign scheme for achieving high spin-filtering efficiency in thecurrent-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi/Ni2NiSi/Co2MnSi
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(177027, 177040)
 ACo2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such anarchitecture, of which the electronic structure and magnetotransport propertiesare systematically investigated by first principles approaches.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(177253, 177253)
 Transportcalculations further confirms the superiority of the all-Heusler architectureover the conventional Heusler/transition-metal(TM) structure by comparing theirtransmission coefficients and interfacial resistances of parallel conductionelectrons, as well as the macroscopic current-voltage (I-V) characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(177255, 177255)
 Transportcalculations further confirms the superiority of the all-Heusler architectureover the conventional Heusler/transition-metal(TM) structure by comparing theirtransmission coefficients and interfacial resistances of parallel conductionelectrons, as well as the macroscopic current-voltage (I-V) characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(177321, 177321)
 Wesuggest future theoretical and experimental efforts in developing novelall-Heusler GMR junctions for the read heads of the next generationhigh-density hard disk drives (HD<missing VAR>Ds).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(177323, 177323)
 Wesuggest future theoretical and experimental efforts in developing novelall-Heusler GMR junctions for the read heads of the next generationhigh-density hard disk drives (HD<missing VAR>Ds).
EXCEPTION 3: IndexError for Ds
Abstract does not contain any numbers.

I
###Robustness of the magnetoresistance of nanoparticle arrays|V. Estevez,E. Bascones###
(177389, 177389)
 Recent work has found that the interplay between spin accumulation andCoulomb blockade in nanoparticle arrays results in peaky I-V and tunnelingmagnetoresistance (TMR) curves and in huge values of the TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Robustness of the magnetoresistance of nanoparticle arrays|V. Estevez,E. Bascones###
(177391, 177391)
 Recent work has found that the interplay between spin accumulation andCoulomb blockade in nanoparticle arrays results in peaky I-V and tunnelingmagnetoresistance (TMR) curves and in huge values of the TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Robustness of the magnetoresistance of nanoparticle arrays|V. Estevez,E. Bascones###
(177574, 177574)
 A different polarization in the electrodesmodifies the peak shape in the I-V and TMR curves but not their order ofmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Robustness of the magnetoresistance of nanoparticle arrays|V. Estevez,E. Bascones###
(177576, 177576)
 A different polarization in the electrodesmodifies the peak shape in the I-V and TMR curves but not their order ofmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics|Isidoro Martínez,Petra Högl,César González-Ruano,Juan Pedro Cascales,Coriolan Tiusan,Yuan Lu,Michel Hehn,Alex Matos-Abiague,Jaroslav Fabian,Igor Žutić,Farkhad G. Aliev###
(177719, 177723)
 Spin-orbit coupling (SOC) is a key interaction in spintronics, allowing anelectrical control of spin or magnetization and, vice versa, a magnetic controlof electrical current.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics|Isidoro Martínez,Petra Högl,César González-Ruano,Juan Pedro Cascales,Coriolan Tiusan,Yuan Lu,Michel Hehn,Alex Matos-Abiague,Jaroslav Fabian,Igor Žutić,Farkhad G. Aliev###
(177797, 177799)
 However, recent advances have revealed much broaderimplications of SOC that is also central to the design of topological states,including topological insulators, skyrmions, and Majorana fermions, or toovercome the exclusion of two-dimensional ferro-magnetism expected from theMermin-Wagner theorem.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics|Isidoro Martínez,Petra Högl,César González-Ruano,Juan Pedro Cascales,Coriolan Tiusan,Yuan Lu,Michel Hehn,Alex Matos-Abiague,Jaroslav Fabian,Igor Žutić,Farkhad G. Aliev###
(177875, 177877)
 SOC and the resulting emergent interfacial spin-orbitfields are simply realized in junctions through structural inversion asymmetry,while the anisotropy in magnetoresistance (MR) allows for their experimentaldetection.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics|Isidoro Martínez,Petra Högl,César González-Ruano,Juan Pedro Cascales,Coriolan Tiusan,Yuan Lu,Michel Hehn,Alex Matos-Abiague,Jaroslav Fabian,Igor Žutić,Farkhad G. Aliev###
(177961, 177962)
 Surprisingly, we demonstrate that an all-epitaxialferromagnet/MgO/metal junction with only a negligible MR anisotropy undergoes aremarkable transformation below the superconducting transition temperature ofthe metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics|Isidoro Martínez,Petra Högl,César González-Ruano,Juan Pedro Cascales,Coriolan Tiusan,Yuan Lu,Michel Hehn,Alex Matos-Abiague,Jaroslav Fabian,Igor Žutić,Farkhad G. Aliev###
(178089, 178091)
 Our findings call for revisiting the role of SOC in other systemswhich, even when it seems negligible in the normal state, could have a profoundinfluence on the superconducting response.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(178156, 178156)
Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 1, 'to', 5]

NiFe
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(178160, 178161)
Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 1, 'to', 5]

F
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(178297, 178297)
 Another promising application of graphene is related to its use as aspacer separating ferromagnetic metals (FMs) in vertical magnetoresistivedevices, the most prominent class of spintronic devices widely used as magneticsensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 1, 'to', 3]

In
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(178337, 178337)
 In particular, few-layer graphene was predicted to act as a perfectspin filter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 1, 'to', 2]

F
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(178416, 178416)
 Here we show that the role of graphene in such devices (at leastin the absence of epitaxial alignment between graphene and the FMs) isdifferent and determined by proximity-induced spin splitting and chargetransfer with adjacent ferromagnetic metals, making graphene a weak FM<missing VAR>electrode rather than a spin filter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 1, 'to', 1]

F
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(178463, 178463)
 Here we show that the role of graphene in such devices (at leastin the absence of epitaxial alignment between graphene and the FMs) isdifferent and determined by proximity-induced spin splitting and chargetransfer with adjacent ferromagnetic metals, making graphene a weak FM<missing VAR>electrode rather than a spin filter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1, 'to', 1]

Co
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(178507, 178507)
 To this end, we report observations ofmagnetoresistance (MR) in vertical Co-graphene-NiFe junctions with 1 to 4graphene layers separating the ferromagnets, and demonstrate that thedependence of the MR sign on the number of layers and its inversion atrelatively small bias voltages is consistent with spin transport between weaklydoped and differently spin-polarized layers of graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1, 'to', 0]

NiFe
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(178511, 178512)
 To this end, we report observations ofmagnetoresistance (MR) in vertical Co-graphene-NiFe junctions with 1 to 4graphene layers separating the ferromagnets, and demonstrate that thedependence of the MR sign on the number of layers and its inversion atrelatively small bias voltages is consistent with spin transport between weaklydoped and differently spin-polarized layers of graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 1, 'to', 0]

Co
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(178645, 178645)
 The proposedinterpretation is supported by the observation of an MR sign reversal in biasedCo-graphene-h<missing VAR>BN-NiFe devices and by comprehensive structural characterization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1, 'to', 1]

BN
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(178650, 178651)
 The proposedinterpretation is supported by the observation of an MR sign reversal in biasedCo-graphene-h<missing VAR>BN-NiFe devices and by comprehensive structural characterization.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1, 'to', 1]

NiFe
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(178653, 178654)
 The proposedinterpretation is supported by the observation of an MR sign reversal in biasedCo-graphene-h<missing VAR>BN-NiFe devices and by comprehensive structural characterization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1, 'to', 1]

Fe2O3/Cr2O3/Fe2O3
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(179872, 179885)
 Here we demonstrate such a static interlayer coupling at roomtemperature in an antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the twoantiferromagnetic Fe2O3 layers are functional materials and theantiferromagnetic Cr2O3 layer serves as a spacer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe2O3
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(179897, 179900)
 Here we demonstrate such a static interlayer coupling at roomtemperature in an antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the twoantiferromagnetic Fe2O3 layers are functional materials and theantiferromagnetic Cr2O3 layer serves as a spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(179917, 179920)
 Here we demonstrate such a static interlayer coupling at roomtemperature in an antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the twoantiferromagnetic Fe2O3 layers are functional materials and theantiferromagnetic Cr2O3 layer serves as a spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(179935, 179935)
 The Neel vectors in the topand bottom Fe2O3 are strongly orthogonally coupled, which is bridged by atypical bosonic excitation (magnon) in the Cr2O3 spacer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(179951, 179954)
 The Neel vectors in the topand bottom Fe2O3 are strongly orthogonally coupled, which is bridged by atypical bosonic excitation (magnon) in the Cr2O3 spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(179990, 179993)
 The Neel vectors in the topand bottom Fe2O3 are strongly orthogonally coupled, which is bridged by atypical bosonic excitation (magnon) in the Cr2O3 spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaInAs/InP
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180164, 180169)
Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaInAs/InP
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180205, 180210)
 We study the magnetotransport in small hybrid junctions formed byhigh-mobility GaInAs/InP heterostructures coupled to superconducting (S) andnormal metal (N) terminals.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(S)
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180220, 180222)
 We study the magnetotransport in small hybrid junctions formed byhigh-mobility GaInAs/InP heterostructures coupled to superconducting (S) andnormal metal (N) terminals.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(N)
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180231, 180233)
 We study the magnetotransport in small hybrid junctions formed byhigh-mobility GaInAs/InP heterostructures coupled to superconducting (S) andnormal metal (N) terminals.
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaInAs/InP
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180272, 180277)
 Highly transmissive superconducting contacts to atwo-dimensional electron gas (2DEG) located in a GaInAs/InP heterostructure arerealized by using a Au/NbN layer system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Au/NbN
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180292, 180295)
 Highly transmissive superconducting contacts to atwo-dimensional electron gas (2DEG) located in a GaInAs/InP heterostructure arerealized by using a Au/NbN layer system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180310, 180310)
 The magnetoresistance of the S/2DEG/Nstructures is studied as a function of dc bias current and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180317, 180317)
 The magnetoresistance of the S/2DEG/Nstructures is studied as a function of dc bias current and temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180345, 180345)
 At biascurrents below a critical value, the resistance of the S/2DEG/N structuresdevelops a strong oscillatory dependence on the magnetic field, with anamplitude of the oscillations considerably larger than that of the referenceN/2DEG/N structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180369, 180369)
 At biascurrents below a critical value, the resistance of the S/2DEG/N structuresdevelops a strong oscillatory dependence on the magnetic field, with anamplitude of the oscillations considerably larger than that of the referenceN/2DEG/N structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180376, 180376)
 At biascurrents below a critical value, the resistance of the S/2DEG/N structuresdevelops a strong oscillatory dependence on the magnetic field, with anamplitude of the oscillations considerably larger than that of the referenceN/2DEG/N structures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180428, 180428)
 At biascurrents below a critical value, the resistance of the S/2DEG/N structuresdevelops a strong oscillatory dependence on the magnetic field, with anamplitude of the oscillations considerably larger than that of the referenceN/2DEG/N structures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(180435, 180435)
 At biascurrents below a critical value, the resistance of the S/2DEG/N structuresdevelops a strong oscillatory dependence on the magnetic field, with anamplitude of the oscillations considerably larger than that of the referenceN/2DEG/N structures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180527, 180527)
 We have investigated structure, electronic, and magnetic properties ofmetal-terminated zigzag graphene nanoribbons (M-ZGNRs) by first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 3, 'd', 1]

Fe
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180570, 180570)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, 'd', 0]

Co
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180573, 180573)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, 'd', 0]

Ni
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180578, 180578)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3, 'd', 0]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180591, 180591)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3, 'd', 0]

Cu
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180595, 180595)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 3, 'd', 0]

Ag
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180598, 180598)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3, 'd', 0]

Au
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180603, 180603)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 3, 'd', 0]

F
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180627, 180627)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3, 'd', 1]

Co
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180643, 180643)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 3, 'd', 1]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180647, 180647)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 3, 'd', 1]

Ni
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180652, 180652)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3, 'd', 1]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180656, 180656)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 3, 'd', 1]

F
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180675, 180675)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 3, 'd', 1]

In
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180696, 180696)
 In the AFM<missing VAR> state the TM terminations transform semiconducting ZGNRs intometallic ones while the band gap remains in ZGNR<missing VAR> with NM<missing VAR> terminations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 3, 'd', 2]

F
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180701, 180701)
 In the AFM<missing VAR> state the TM terminations transform semiconducting ZGNRs intometallic ones while the band gap remains in ZGNR<missing VAR> with NM<missing VAR> terminations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 3, 'd', 2]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180719, 180719)
 In the AFM<missing VAR> state the TM terminations transform semiconducting ZGNRs intometallic ones while the band gap remains in ZGNR<missing VAR> with NM<missing VAR> terminations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 3, 'd', 2]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180743, 180743)
 In the AFM<missing VAR> state the TM terminations transform semiconducting ZGNRs intometallic ones while the band gap remains in ZGNR<missing VAR> with NM<missing VAR> terminations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 3, 'd', 2]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180748, 180748)
 In the AFM<missing VAR> state the TM terminations transform semiconducting ZGNRs intometallic ones while the band gap remains in ZGNR<missing VAR> with NM<missing VAR> terminations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 3, 'd', 2]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180765, 180765)
Ferromagnetic states of M-ZGNRs with TM terminations show a high degree of spinpolarization at the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 3, 'd', 3]

Fe
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180812, 180812)
 We predict a large magnetoresistance inFe-ZGNR<missing VAR> junctions with a low, uniform magnetic switching field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 3, 'd', 4]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(180816, 180816)
 We predict a large magnetoresistance inFe-ZGNR<missing VAR> junctions with a low, uniform magnetic switching field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 3, 'd', 4]

HB
###Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array|Somnath Bhattacharyya,Christopher Coleman,Davie Mtsuko,Dmitri Churochkin###
(180921, 180922)
 We show that in heavily boron-doped diamondfilms (HBDDF) films some sharp transport features can be manipulated byapplying a magnetic field and controlled finite bias current.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array|Somnath Bhattacharyya,Christopher Coleman,Davie Mtsuko,Dmitri Churochkin###
(180925, 180925)
 We show that in heavily boron-doped diamondfilms (HBDDF) films some sharp transport features can be manipulated byapplying a magnetic field and controlled finite bias current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BK
###Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array|Somnath Bhattacharyya,Christopher Coleman,Davie Mtsuko,Dmitri Churochkin###
(181067, 181068)
 The current-voltage characteristics show features of theBerezinskii-Kosterlitz-Thouless (BKT) phase transitions which verifies thetwo-dimensional structure in HBDDF observed recently.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HB
###Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array|Somnath Bhattacharyya,Christopher Coleman,Davie Mtsuko,Dmitri Churochkin###
(181091, 181092)
 The current-voltage characteristics show features of theBerezinskii-Kosterlitz-Thouless (BKT) phase transitions which verifies thetwo-dimensional structure in HBDDF observed recently.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array|Somnath Bhattacharyya,Christopher Coleman,Davie Mtsuko,Dmitri Churochkin###
(181095, 181095)
 The current-voltage characteristics show features of theBerezinskii-Kosterlitz-Thouless (BKT) phase transitions which verifies thetwo-dimensional structure in HBDDF observed recently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181280, 181280)
 In this respect our research is devoted to the evaluation of thebest materials for the development and the realization of the quantum devicesbased on superconductors and at the same point towards the reduction of thesize of the employed heterostructures towards and below nano-scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181378, 181378)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181410, 181410)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181426, 181426)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181429, 181429)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181433, 181436)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181444, 181444)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181466, 181466)
 We show that it is possible to fabricatenanostructured Nb/ Ni(Co, Py, Fe)/Nb pi-junctions with a nano-scale magneticdead layer and with a high level of control over the ferromagnetic barrierthickness variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181469, 181469)
 We show that it is possible to fabricatenanostructured Nb/ Ni(Co, Py, Fe)/Nb pi-junctions with a nano-scale magneticdead layer and with a high level of control over the ferromagnetic barrierthickness variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181471, 181471)
 We show that it is possible to fabricatenanostructured Nb/ Ni(Co, Py, Fe)/Nb pi-junctions with a nano-scale magneticdead layer and with a high level of control over the ferromagnetic barrierthickness variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181477, 181477)
 We show that it is possible to fabricatenanostructured Nb/ Ni(Co, Py, Fe)/Nb pi-junctions with a nano-scale magneticdead layer and with a high level of control over the ferromagnetic barrierthickness variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181480, 181480)
 We show that it is possible to fabricatenanostructured Nb/ Ni(Co, Py, Fe)/Nb pi-junctions with a nano-scale magneticdead layer and with a high level of control over the ferromagnetic barrierthickness variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181529, 181529)
 In agreement with the theoretical model we estimate, fromthe oscillations of the critical current as function of the ferromagneticbarrier thickness, the exchange energy of the ferromagnetic material and weobtain that it is close to bulk ferromagnetic materials implying that theferromagnet is clean and S/F roughness is minimal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S/F
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181629, 181631)
 In agreement with the theoretical model we estimate, fromthe oscillations of the critical current as function of the ferromagneticbarrier thickness, the exchange energy of the ferromagnetic material and weobtain that it is close to bulk ferromagnetic materials implying that theferromagnet is clean and S/F roughness is minimal.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S/F/S
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181646, 181650)
 We conclude that S/F/SJosephson junctions are viable structures in the development ofsuperconductor-based quantum electronic devices; in particular Nb/Co/Nb andNb/Fe/Nb multilayers with their low value of the magnetic dead layer and highvalue of the exchange energy can readily be used in controllable two-levelquantum information systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Nb/Co/Nb
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181687, 181691)
 We conclude that S/F/SJosephson junctions are viable structures in the development ofsuperconductor-based quantum electronic devices; in particular Nb/Co/Nb andNb/Fe/Nb multilayers with their low value of the magnetic dead layer and highvalue of the exchange energy can readily be used in controllable two-levelquantum information systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Nb/Fe/Nb
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181696, 181700)
 We conclude that S/F/SJosephson junctions are viable structures in the development ofsuperconductor-based quantum electronic devices; in particular Nb/Co/Nb andNb/Fe/Nb multilayers with their low value of the magnetic dead layer and highvalue of the exchange energy can readily be used in controllable two-levelquantum information systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(181761, 181761)
 In this respect, we discuss applications of ournano-junctions to engineering magnetoresistive devices such as programmablepseudo-spin-valve Josephson structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(181823, 181823)
Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 14, 'K', 4],[442.0, 1, 'ns', 10]

IVC
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(181827, 181829)
Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 14, 'K', 4],[436.0, 1, 'ns', 10]

K
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(181863, 181863)
 We have observed at low temperatures (<8K) hysteretic I(V) characteristicsfor sub-mkm (200nm) metallic break-junctions based on the heavy-fermioncompound UPd2Al3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 14, 'K', 3],[402.0, 1, 'ns', 9]

I(V)
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(181868, 181871)
 We have observed at low temperatures (<8K) hysteretic I(V) characteristicsfor sub-mkm (200nm) metallic break-junctions based on the heavy-fermioncompound UPd2Al3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 14, 'K', 3],[394.0, 1, 'ns', 9]

UPd2Al3
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(181906, 181910)
 We have observed at low temperatures (<8K) hysteretic I(V) characteristicsfor sub-mkm (200nm) metallic break-junctions based on the heavy-fermioncompound UPd2Al3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0
[152.0, 14, 'K', 3],[355.0, 1, 'ns', 9]

I(V)
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(181966, 181969)
 Wedemonstrate that those hysteretic I(V) curves can be reproduced theoreticallyby assuming the constriction to be in the thermal regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 14, 'K', 1],[296.0, 1, 'ns', 7]

I(V)
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(182016, 182019)
 Our calculations showthat such anomalous I(V) curves are due to the sharp increase of rho(T) ofUPd2Al3 near the Neel temperature T<missing VAR>N  14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 14, 'K', 0],[246.0, 1, 'ns', 6]

UPd2Al3
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(182045, 182049)
 Our calculations showthat such anomalous I(V) curves are due to the sharp increase of rho(T) ofUPd2Al3 near the Neel temperature T<missing VAR>N  14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0
[13.0, 14, 'K', 0],[216.0, 1, 'ns', 6]

N
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(182060, 182060)
 Our calculations showthat such anomalous I(V) curves are due to the sharp increase of rho(T) ofUPd2Al3 near the Neel temperature T<missing VAR>N  14K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 14, 'K', 0],[205.0, 1, 'ns', 6]

I(V)
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(182097, 182100)
 From this point of view each metalwith similar rho(T) should produce similar hysteretic I(V) curves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 14, 'K', 1],[165.0, 1, 'ns', 5]

As
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(182105, 182105)
 As examplewe show calculations for the rare-earth manganite La0.75Sr0.25MnO3, asystem with colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 14, 'K', 2],[160.0, 1, 'ns', 4]

La0.75Sr0.25MnO3
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(182126, 182132)
 As examplewe show calculations for the rare-earth manganite La0.75Sr0.25MnO3, asystem with colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 14, 'K', 2],[133.0, 1, 'ns', 4]

In
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(182147, 182147)
 In this way we demonstrate thatnano-sized point contacts can be non-linear devices with N-shaped I(V)characteristics, i<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 14, 'K', 3],[118.0, 1, 'ns', 3]

N
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(182180, 182180)
 In this way we demonstrate thatnano-sized point contacts can be non-linear devices with N-shaped I(V)characteristics, i<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 14, 'K', 3],[85.0, 1, 'ns', 3]

I(V)
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(182184, 182187)
 In this way we demonstrate thatnano-sized point contacts can be non-linear devices with N-shaped I(V)characteristics, i<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 14, 'K', 3],[78.0, 1, 'ns', 3]

Pt
###Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins|Chuan Li,Katsuyoshi Komatsu,G. Clave,S. Campidelli,A. Filoramo,S. Gueron,H. Bouchiat###
(182302, 182302)
Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins|Chuan Li,Katsuyoshi Komatsu,G. Clave,S. Campidelli,A. Filoramo,S. Gueron,H. Bouchiat###
(182389, 182389)
 In the present work, we show thatPt-porphyrins adsorbed on graphene lead to an enhanced mobility and togate-dependent magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins|Chuan Li,Katsuyoshi Komatsu,G. Clave,S. Campidelli,A. Filoramo,S. Gueron,H. Bouchiat###
(182405, 182405)
 In the present work, we show thatPt-porphyrins adsorbed on graphene lead to an enhanced mobility and togate-dependent magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins|Chuan Li,Katsuyoshi Komatsu,G. Clave,S. Campidelli,A. Filoramo,S. Gueron,H. Bouchiat###
(182514, 182514)
 In addition, ionized porphyrins carry amagnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO
###Thin-Film Trilayer Manganate Junctions|Jonathan Z. Sun###
(182953, 182958)
 The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.11,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.22333333333333336,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 3, '%', 0],[66.0, 4.2, 'K', 1],[86.0, 100, 'Oe', 1]

SrTiO3
###Thin-Film Trilayer Manganate Junctions|Jonathan Z. Sun###
(182964, 182967)
 The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, '%', 0],[57.0, 4.2, 'K', 1],[77.0, 100, 'Oe', 1]

La0.67
###Thin-Film Trilayer Manganate Junctions|Jonathan Z. Sun###
(182969, 182970)
 The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 3, '%', 0],[54.0, 4.2, 'K', 1],[74.0, 100, 'Oe', 1]

Sr0.33MnO3
###Thin-Film Trilayer Manganate Junctions|Jonathan Z. Sun###
(182972, 182976)
 The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6928406466512702,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23094688221709006,0,0,0,0,0,0,0,0,0,0,0,0,0.07621247113163973,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, '%', 0],[48.0, 4.2, 'K', 1],[68.0, 100, 'Oe', 1]

In
###Giant orbital moments are responsible for the anisotropic magnetoresistance of atomic contacts|Gabriel Autes,Cyrille Barreteau,Marie-Catherine Desjonquères,Daniel Spanjaard,Michel Viret###
(183453, 183453)
 In both states giant orbital moments appear on the lowcoordinated central atom in a realistic contact geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 3, 'd', 2]

In
###Edge proximity-induced magnetoresistance and spin polarization in ferromagnetic gated bilayer graphene nanoribbon|Vahid Derakhshan,Hosein Cheraghchi###
(183679, 183679)
 In a more realistic set-up, theexchange field is induced by two ferromagnetic insulator strips deposited onthe ribbon edges while a perpendicular electric field is applied by the topgated electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Edge proximity-induced magnetoresistance and spin polarization in ferromagnetic gated bilayer graphene nanoribbon|Vahid Derakhshan,Hosein Cheraghchi###
(183813, 183813)
 As a result, a giantmagnetoresistance is achievable by changing the alignment of inducedmagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Electronic transport through a graphene-based ferromagnetic/normal/ferromagnetic junction|Jiang-chai Chen,Shu-guang Cheng,Shun-Qing Shen,Qing-feng Sun###
(184034, 184034)
 Electronic transport in a graphene-based ferromagnetic/normal/ferromagneticjunction is investigated by means of Landauer-Bu<missing VAR>ttiker formulism and thenonequilibrium Greens<missing VAR> function technique.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 100, '%', 2],[173.0, 100, '%', 3],[208.0, 100, '%', 3],[253.0, 50, '%', 4]

In
###Electronic transport through a graphene-based ferromagnetic/normal/ferromagnetic junction|Jiang-chai Chen,Shu-guang Cheng,Shun-Qing Shen,Qing-feng Sun###
(184305, 184305)
 In addition, when themagnetizations of the left and right leads have a relative angle, theconductance changes as a cosine function of the angle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 100, '%', 3],[98.0, 100, '%', 2],[63.0, 100, '%', 2],[18.0, 50, '%', 1]

(FSF)
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(184482, 184486)
 Transport phenomena in clean ferromagnet-superconductor-ferromagnet (FSF)trilayers are studied theoretically for a general case of arbitrary orientationof in-plane magnetizations and interface transparencies.
Featurization successful!
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FSF
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(184689, 184691)
 Spin-triplet paircorrelations in FSF heterostructures induced by non-collinearity ofmagnetizations are investigated by solving the Gorkov equations in the cleanlimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FSF
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(184737, 184739)
 Unlike diffusive FSF junctions, where the triplet correlations have along-range monotonic decay, we show that in clean ferromagnet-superconductorhybrids both singlet and triplet pair correlations induced in the F layers areoscillating and power-law decaying with the distance from the S-F interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(184801, 184801)
 Unlike diffusive FSF junctions, where the triplet correlations have along-range monotonic decay, we show that in clean ferromagnet-superconductorhybrids both singlet and triplet pair correlations induced in the F layers areoscillating and power-law decaying with the distance from the S-F interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(184828, 184828)
 Unlike diffusive FSF junctions, where the triplet correlations have along-range monotonic decay, we show that in clean ferromagnet-superconductorhybrids both singlet and triplet pair correlations induced in the F layers areoscillating and power-law decaying with the distance from the S-F interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(184830, 184830)
 Unlike diffusive FSF junctions, where the triplet correlations have along-range monotonic decay, we show that in clean ferromagnet-superconductorhybrids both singlet and triplet pair correlations induced in the F layers areoscillating and power-law decaying with the distance from the S-F interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu/Co
###Implementation of a non-equilibrium Green's function method to calculate spin transfer torque|Christian Heiliger,Michael Czerner,Bogdan Yu. Yavorsky,Ingrid Mertig,Mark D. Stiles###
(184982, 184986)
 We use our implementation tostudy the spin transfer torque in metallic Co/Cu/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

RuSr2Gd1.5Ce0.5Cu2O10
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(185023, 185033)
Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr2Gd1.5Ce0.5Cu2O10.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0.029411764705882353,0,0,0,0,0,0.08823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1, ',', 1],[255.0, 150, 'and', 4],[256.0, 1500, 'Oe', 4],[277.0, 0.4, 'interval', 4],[385.0, 2, ',', 6]

H
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(185051, 185051)
 The lower critical field of the grains, Hc<missing VAR>1, and the intragrain criticalcurrent density, Jc, were determined for the superconductingruthenate-cuprate RuSr2Gd1.5Ce0.5Cu2O10-delta[Ru-1222(Gd)] through a systematic study of the hysteresis in magnetoresistanceloops.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1, ',', 0],[237.0, 150, 'and', 3],[238.0, 1500, 'Oe', 3],[259.0, 0.4, 'interval', 3],[367.0, 2, ',', 5]

RuSr2Gd1.5Ce0.5Cu2O10
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(185089, 185099)
 The lower critical field of the grains, Hc<missing VAR>1, and the intragrain criticalcurrent density, Jc, were determined for the superconductingruthenate-cuprate RuSr2Gd1.5Ce0.5Cu2O10-delta[Ru-1222(Gd)] through a systematic study of the hysteresis in magnetoresistanceloops.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0.029411764705882353,0,0,0,0,0,0.08823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1, ',', 0],[189.0, 150, 'and', 3],[190.0, 1500, 'Oe', 3],[211.0, 0.4, 'interval', 3],[319.0, 2, ',', 5]

Ru
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(185105, 185105)
 The lower critical field of the grains, Hc<missing VAR>1, and the intragrain criticalcurrent density, Jc, were determined for the superconductingruthenate-cuprate RuSr2Gd1.5Ce0.5Cu2O10-delta[Ru-1222(Gd)] through a systematic study of the hysteresis in magnetoresistanceloops.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1, ',', 0],[183.0, 150, 'and', 3],[184.0, 1500, 'Oe', 3],[205.0, 0.4, 'interval', 3],[313.0, 2, ',', 5]

(Gd)
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(185108, 185110)
 The lower critical field of the grains, Hc<missing VAR>1, and the intragrain criticalcurrent density, Jc, were determined for the superconductingruthenate-cuprate RuSr2Gd1.5Ce0.5Cu2O10-delta[Ru-1222(Gd)] through a systematic study of the hysteresis in magnetoresistanceloops.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1, ',', 0],[178.0, 150, 'and', 3],[179.0, 1500, 'Oe', 3],[200.0, 0.4, 'interval', 3],[308.0, 2, ',', 5]

H
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(185230, 185230)
 The temperature dependencyof Hc<missing VAR>1 and Jc both exhibit a smooth increase on cooling withoutsaturation down to T/TSC cong  0.2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 1, ',', 2],[58.0, 150, 'and', 1],[59.0, 1500, 'Oe', 1],[80.0, 0.4, 'interval', 1],[188.0, 2, ',', 3]

SC
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(185265, 185266)
 The temperature dependencyof Hc<missing VAR>1 and Jc both exhibit a smooth increase on cooling withoutsaturation down to T/TSC cong  0.2.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 1, ',', 2],[22.0, 150, 'and', 1],[23.0, 1500, 'Oe', 1],[44.0, 0.4, 'interval', 1],[152.0, 2, ',', 3]

H
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(185278, 185278)
 The obtained Hc<missing VAR>1 values varybetween 150 and 1500 Oe in the 0.2 leq  % T/TSC leq  0.4 interval,for samples annealed in an oxygen flow; oxygenation under high pressure (50atm) leads to a further increase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 1, ',', 3],[10.0, 150, 'and', 0],[11.0, 1500, 'Oe', 0],[32.0, 0.4, 'interval', 0],[140.0, 2, ',', 2]

SC
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(185305, 185306)
 The obtained Hc<missing VAR>1 values varybetween 150 and 1500 Oe in the 0.2 leq  % T/TSC leq  0.4 interval,for samples annealed in an oxygen flow; oxygenation under high pressure (50atm) leads to a further increase.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 1, ',', 3],[17.0, 150, 'and', 0],[16.0, 1500, 'Oe', 0],[4.0, 0.4, 'interval', 0],[112.0, 2, ',', 2]

H
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(185443, 185443)
 TheHc<missing VAR>1(T) and Jc(T) dependencies are explained in the context of amagnetic phase separation scenario.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 1, ',', 6],[155.0, 150, 'and', 3],[154.0, 1500, 'Oe', 3],[133.0, 0.4, 'interval', 3],[25.0, 2, ',', 1]

In
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(185537, 185537)
 In these devices, the organic semiconductor (OSC) Alq3(tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic(FM) Co and Fe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 4.2, 'K', 2],[343.0, 3, ',', 6],[453.0, 80, 'K', 8]

(OSC)
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(185550, 185554)
 In these devices, the organic semiconductor (OSC) Alq3(tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic(FM) Co and Fe layers.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4.2, 'K', 2],[326.0, 3, ',', 6],[436.0, 80, 'K', 8]

F
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(185585, 185585)
 In these devices, the organic semiconductor (OSC) Alq3(tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic(FM) Co and Fe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4.2, 'K', 2],[295.0, 3, ',', 6],[405.0, 80, 'K', 8]

Co
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(185589, 185589)
 In these devices, the organic semiconductor (OSC) Alq3(tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic(FM) Co and Fe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 4.2, 'K', 2],[291.0, 3, ',', 6],[401.0, 80, 'K', 8]

Fe
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(185593, 185593)
 In these devices, the organic semiconductor (OSC) Alq3(tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic(FM) Co and Fe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 4.2, 'K', 2],[287.0, 3, ',', 6],[397.0, 80, 'K', 8]

PN
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(185714, 185715)
 The devices microstructure was studied by X<missing VAR>-ray reflectometry,Auger electron spectroscopy and polarized neutron reflectometry (PNR).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 4.2, 'K', 1],[165.0, 3, ',', 3],[275.0, 80, 'K', 5]

F
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(185771, 185771)
 Thefilms show well-defined layers with modest average chemical roughness (3-5 nm)at the interface between the Alq3 and the surrounding FM<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 4.2, 'K', 2],[109.0, 3, ',', 2],[219.0, 80, 'K', 4]

F
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(185800, 185800)
Reflectometry shows that larger MR effects are associated with smallerFM<missing VAR>/Alq3 interface width (both chemical and magnetic) and a magnetically deadlayer at the Alq3/Fe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 4.2, 'K', 3],[80.0, 3, ',', 1],[190.0, 80, 'K', 3]

Fe
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(185838, 185838)
Reflectometry shows that larger MR effects are associated with smallerFM<missing VAR>/Alq3 interface width (both chemical and magnetic) and a magnetically deadlayer at the Alq3/Fe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 4.2, 'K', 3],[42.0, 3, ',', 1],[152.0, 80, 'K', 3]

PN
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(185845, 185846)
 The PNR<missing VAR> data also show that the Co layer,which was deposited on top of the Alq3, adopts a multi-domain magneticstructure at low field and a perfect anti-parallel state is not obtained.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 4.2, 'K', 4],[34.0, 3, ',', 0],[144.0, 80, 'K', 2]

Co
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(185859, 185859)
 The PNR<missing VAR> data also show that the Co layer,which was deposited on top of the Alq3, adopts a multi-domain magneticstructure at low field and a perfect anti-parallel state is not obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 4.2, 'K', 4],[21.0, 3, ',', 0],[131.0, 80, 'K', 2]

(SOC)
###Giant anisotropic magnetoresistance through a tilted molecular $π$-orbital|Dongzhe Li,Fabian Pauly,Alexander Smogunov###
(186079, 186083)
 Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling(SOC), is the sensitivity of the electrical resistance in magnetic systems tothe direction of spin magnetization.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 95, '%', 2]

SOC
###Giant anisotropic magnetoresistance through a tilted molecular $π$-orbital|Dongzhe Li,Fabian Pauly,Alexander Smogunov###
(186273, 186275)
 We find that SOC opens, via spin-flip events at theferromagnet-molecule interface, a new conduction channel, which is fullyblocked by symmetry without SOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 95, '%', 2]

SOC
###Giant anisotropic magnetoresistance through a tilted molecular $π$-orbital|Dongzhe Li,Fabian Pauly,Alexander Smogunov###
(186324, 186326)
 We find that SOC opens, via spin-flip events at theferromagnet-molecule interface, a new conduction channel, which is fullyblocked by symmetry without SOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 95, '%', 2]

F
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(186592, 186592)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(186594, 186594)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(186620, 186620)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(186623, 186623)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(186633, 186633)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(186635, 186635)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(186669, 186669)
 We attribute thesetransport features to presence of two new scattering processes in AF--Sjunctions, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(186672, 186672)
 We attribute thesetransport features to presence of two new scattering processes in AF--Sjunctions, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(186763, 186763)
Furthermore, we show that the interplay between the Neel vector direction andthe interfacial Rashba spin-orbit coupling leads to a large anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(186810, 186810)
 The unusual transport properties make AF--S interfacesunique among the traditional condensed-matter-system-based superconductingjunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(186813, 186813)
 The unusual transport properties make AF--S interfacesunique among the traditional condensed-matter-system-based superconductingjunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187533, 187534)
Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187540, 187540)
Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187543, 187543)
Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187583, 187583)
 Two-dimensional ferromagnetic (FM) half-metals are promising candidates foradvanced spintronic devices with small-size and high-capacity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187636, 187636)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Te4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187639, 187642)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187679, 187680)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187686, 187686)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187689, 187689)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Te4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187714, 187717)
 We found that Cr3Te4 monolayer based device showsspin filtering and dual spin diode effect when applying bias voltage, whileCr3S4 monolayer is an excellent platform to realize a spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3S4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187754, 187757)
 We found that Cr3Te4 monolayer based device showsspin filtering and dual spin diode effect when applying bias voltage, whileCr3S4 monolayer is an excellent platform to realize a spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Te4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187829, 187832)
 Thedifferent transport properties are primarily ascribed to the semiconductingspin channel, which is close to and away from the Fermi level in Cr3Te4and Cr3Se4 monolayers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Se4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187837, 187840)
 Thedifferent transport properties are primarily ascribed to the semiconductingspin channel, which is close to and away from the Fermi level in Cr3Te4and Cr3Se4 monolayers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Se4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187860, 187863)
 Interestingly, the current inmonolayer Cr3Se4 based device also displays a negative differentialresistance effect (NDRE) and a high magnetoresistance ratio (up to 2103).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187885, 187885)
 Interestingly, the current inmonolayer Cr3Se4 based device also displays a negative differentialresistance effect (NDRE) and a high magnetoresistance ratio (up to 2103).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187932, 187932)
Moreover, we found thermally induced spin filtering effect and NDRE inCr3Se4 junction when applying temperature gradient instead of biasvoltage.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Se4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187940, 187943)
Moreover, we found thermally induced spin filtering effect and NDRE inCr3Se4 junction when applying temperature gradient instead of biasvoltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187979, 187980)
 These theoretical findings highlight the potential of Cr3X<missing VAR>4(X<missing VAR>Se, Te) monolayers in spintronic applications and put forward realisticmaterials to realize nanosale spintronic device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187987, 187987)
 These theoretical findings highlight the potential of Cr3X<missing VAR>4(X<missing VAR>Se, Te) monolayers in spintronic applications and put forward realisticmaterials to realize nanosale spintronic device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(187990, 187990)
 These theoretical findings highlight the potential of Cr3X<missing VAR>4(X<missing VAR>Se, Te) monolayers in spintronic applications and put forward realisticmaterials to realize nanosale spintronic device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation|J. -E. Wegrowe,Q. Anh Nguyen,M. Al-Barki,J. -F. Dayen,T. L. Wade,H. -J. Drouhin###
(188231, 188231)
 First measurements ofanisotropic magnetothermopower are presented in electrodeposited Ni nanowirescontacted with Ni, Au and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation|J. -E. Wegrowe,Q. Anh Nguyen,M. Al-Barki,J. -F. Dayen,T. L. Wade,H. -J. Drouhin###
(188240, 188240)
 First measurements ofanisotropic magnetothermopower are presented in electrodeposited Ni nanowirescontacted with Ni, Au and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation|J. -E. Wegrowe,Q. Anh Nguyen,M. Al-Barki,J. -F. Dayen,T. L. Wade,H. -J. Drouhin###
(188243, 188243)
 First measurements ofanisotropic magnetothermopower are presented in electrodeposited Ni nanowirescontacted with Ni, Au and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation|J. -E. Wegrowe,Q. Anh Nguyen,M. Al-Barki,J. -F. Dayen,T. L. Wade,H. -J. Drouhin###
(188247, 188247)
 First measurements ofanisotropic magnetothermopower are presented in electrodeposited Ni nanowirescontacted with Ni, Au and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188411, 188411)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188424, 188424)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI/N
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188456, 188459)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188464, 188464)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NI
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188467, 188468)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188471, 188471)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188481, 188481)
 Inparticular, the observations of the perpendicular AMR effect stimulate furtherinterest in the Rashba-type spin-orbit interaction (SOI) at interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOI)
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188524, 188528)
 Inparticular, the observations of the perpendicular AMR effect stimulate furtherinterest in the Rashba-type spin-orbit interaction (SOI) at interfaces.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188554, 188554)
 Thus,the Rashba model with exchange splitting (EXS) is considered not only to playas an effective model for the physical understanding but also to reflect actualbi-layer systems in current spintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188612, 188612)
 In the present work, we havefirst investigated the temperature dependence of anomalous Hall conductivity(AHC) of Rashba-type ferromagnets considered effects of spin fluctuationswithin the disordered local moment (DLM) scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188648, 188648)
 In the present work, we havefirst investigated the temperature dependence of anomalous Hall conductivity(AHC) of Rashba-type ferromagnets considered effects of spin fluctuationswithin the disordered local moment (DLM) scheme.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HC
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188711, 188712)
 The most distinctive featurethat we observed is that intrinsic AHC increases with increasing temperature.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HC
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188755, 188756)
This can be understood from the aspect of spin chirality, which indicates thatthe AHC increases with decreasing EXS when the SOI is much smaller than theEXS.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188766, 188766)
This can be understood from the aspect of spin chirality, which indicates thatthe AHC increases with decreasing EXS when the SOI is much smaller than theEXS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188772, 188774)
This can be understood from the aspect of spin chirality, which indicates thatthe AHC increases with decreasing EXS when the SOI is much smaller than theEXS.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(188789, 188789)
This can be understood from the aspect of spin chirality, which indicates thatthe AHC increases with decreasing EXS when the SOI is much smaller than theEXS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe2
###Unexpected two-fold symmetric superconductivity in few-layer NbSe$_2$|Alex Hamill,Brett Heischmidt,Egon Sohn,Daniel Shaffer,Kan-Ting Tsai,Xi Zhang,Xiaoxiang Xi,Alexey Suslov,Helmuth Berger,László Forró,Fiona J. Burnell,Jie Shan,Kin Fai Mak,Rafael M. Fernandes,Ke Wang,Vlad S. Pribiag###
(188937, 188939)
Unexpected two-fold symmetric superconductivity in few-layer NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[589.0, 2, 'D', 9]

Ds
###Unexpected two-fold symmetric superconductivity in few-layer NbSe$_2$|Alex Hamill,Brett Heischmidt,Egon Sohn,Daniel Shaffer,Kan-Ting Tsai,Xi Zhang,Xiaoxiang Xi,Alexey Suslov,Helmuth Berger,László Forró,Fiona J. Burnell,Jie Shan,Kin Fai Mak,Rafael M. Fernandes,Ke Wang,Vlad S. Pribiag###
(188955, 188955)
 Two-dimensional transition metal dichalcogenides (TMDs) have been attractingsignificant interest due to a range of properties, such as layer-dependentinversion symmetry, valley-contrasted Berry curvatures, and strong spin-orbitcoupling (SOC).
EXCEPTION 3: IndexError for Ds
(SOC)
[573.0, 2, 'D', 8]

F
###Using rf voltage induced ferromagnetic resonance to study the spin-wave density of states and the Gilbert damping in perpendicularly magnetized disks|T. Devolder###
(189615, 189615)
 We study how the shape of the spinwave resonance lines in rf-voltage inducedFMR can be used to extract the spinwave density of states and the dampingwithin the precessing layer in nanoscale tunnel junctions that possessperpendicular anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[492.0, 200, 'nm', 7],[508.0, 90, 'nm', 8],[546.0, 0.008, 'measured', 9]

F
###Using rf voltage induced ferromagnetic resonance to study the spin-wave density of states and the Gilbert damping in perpendicularly magnetized disks|T. Devolder###
(190051, 190051)
 The transverse and longitudinal susceptibilitysignals have different lineshapes; their joint studies can yield the Gilbertdamping of the free layer of the device with a degree of confidence thatcompares well with standard FMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 200, 'nm', 1],[72.0, 90, 'nm', 2],[110.0, 0.008, 'measured', 3]

FeCoB
###Using rf voltage induced ferromagnetic resonance to study the spin-wave density of states and the Gilbert damping in perpendicularly magnetized disks|T. Devolder###
(190066, 190068)
 Our method is illustrated on FeCoB-based freelayers in which the individual spin-waves can be sufficiently resolved only fordisk diameters below 200 nm.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 200, 'nm', 0],[55.0, 90, 'nm', 1],[93.0, 0.008, 'measured', 2]

B0
###Ballistic Composite Fermions in Semiconductor Nanostructures|J. E. F. Frost,C. -T. Liang,D. R. Mace,M. Y. Simmons,D. A. Ritchie,M. Pepper###
(190322, 190323)
 The well known ballistic electron transportphenomena of quenching of the Hall effect in a mesoscopic cross-junction andnegative magnetoresistance of a constriction are observed close to B0 andnu 1/2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Random resistor network model of minimal conductivity in graphene|V. V. Cheianov,V. I. Falko,B. L. Altshuler,I. L. Aleiner###
(190443, 190443)
 Transport in undoped graphene is related to percolating current patterns inthe networks of em N- and em P-type regions reflecting the strong bipolarcharge density fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Random resistor network model of minimal conductivity in graphene|V. V. Cheianov,V. I. Falko,B. L. Altshuler,I. L. Aleiner###
(190450, 190450)
 Transport in undoped graphene is related to percolating current patterns inthe networks of em N- and em P-type regions reflecting the strong bipolarcharge density fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Random resistor network model of minimal conductivity in graphene|V. V. Cheianov,V. I. Falko,B. L. Altshuler,I. L. Aleiner###
(190480, 190480)
 Transmissions of the em P-N junctions, thoughsmall, are vital in establishing the macroscopic conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Random resistor network model of minimal conductivity in graphene|V. V. Cheianov,V. I. Falko,B. L. Altshuler,I. L. Aleiner###
(190482, 190482)
 Transmissions of the em P-N junctions, thoughsmall, are vital in establishing the macroscopic conductivity.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance through a single molecule|Stefan Schmaus,Alexei Bagrets,Yasmine Nahas,Toyo K. Yamada,Annika Bork,Martin Bowen,Eric Beaurepaire,Ferdinand Evers,Wulf Wulfhekel###
(190707, 190707)
 In general terms,in order to increase data processing capabilities, one may not only considerthe electrons<missing VAR> charge but also its spin [6,7].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 6, ',', 0],[95.0, 8, ',', 1],[275.0, 52, '%', 5]

As
###Magnetoresistance through a single molecule|Stefan Schmaus,Alexei Bagrets,Yasmine Nahas,Toyo K. Yamada,Annika Bork,Martin Bowen,Eric Beaurepaire,Ferdinand Evers,Wulf Wulfhekel###
(190840, 190840)
 As an important first step in this field, wehave performed an experimental and theoretical study on spin transport across amolecular GMR junction consisting of two ferromagnetic electrodes bridged by asingle hydrogen phthalocyanine (H2Pc) molecule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 6, ',', 4],[38.0, 8, ',', 3],[142.0, 52, '%', 1]

H2
###Magnetoresistance through a single molecule|Stefan Schmaus,Alexei Bagrets,Yasmine Nahas,Toyo K. Yamada,Annika Bork,Martin Bowen,Eric Beaurepaire,Ferdinand Evers,Wulf Wulfhekel###
(190917, 190918)
 As an important first step in this field, wehave performed an experimental and theoretical study on spin transport across amolecular GMR junction consisting of two ferromagnetic electrodes bridged by asingle hydrogen phthalocyanine (H2Pc) molecule.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 6, ',', 4],[115.0, 8, ',', 3],[64.0, 52, '%', 1]

H2
###Magnetoresistance through a single molecule|Stefan Schmaus,Alexei Bagrets,Yasmine Nahas,Toyo K. Yamada,Annika Bork,Martin Bowen,Eric Beaurepaire,Ferdinand Evers,Wulf Wulfhekel###
(190936, 190937)
 We observe that even thoughH2Pc in itself is nonmagnetic, incorporating it into a molecular junction canenhance the magnetoresistance by one order of magnitude to 52%.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 6, ',', 5],[134.0, 8, ',', 4],[45.0, 52, '%', 0]

N
###Spin-dependent transport through magnetic nanojunctions|Kamil Walczak,Gloria Platero###
(191038, 191038)
 Coherent electronic transport through a molecular device is studied usingnon-equilibrium Greens<missing VAR> function (NEGF) formalism.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-dependent transport through magnetic nanojunctions|Kamil Walczak,Gloria Platero###
(191041, 191041)
 Coherent electronic transport through a molecular device is studied usingnon-equilibrium Greens<missing VAR> function (NEGF) formalism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(191583, 191583)
 Spin-valley transport and magnetoresistance are investigated insilicene-based N/T<missing VAR>B/N/T<missing VAR>B/N junction where N and T<missing VAR>B are normal silicene andtopological barriers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B/N
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(191586, 191588)
 Spin-valley transport and magnetoresistance are investigated insilicene-based N/T<missing VAR>B/N/T<missing VAR>B/N junction where N and T<missing VAR>B are normal silicene andtopological barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B/N
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(191591, 191593)
 Spin-valley transport and magnetoresistance are investigated insilicene-based N/T<missing VAR>B/N/T<missing VAR>B/N junction where N and T<missing VAR>B are normal silicene andtopological barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(191599, 191599)
 Spin-valley transport and magnetoresistance are investigated insilicene-based N/T<missing VAR>B/N/T<missing VAR>B/N junction where N and T<missing VAR>B are normal silicene andtopological barriers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(191604, 191604)
 Spin-valley transport and magnetoresistance are investigated insilicene-based N/T<missing VAR>B/N/T<missing VAR>B/N junction where N and T<missing VAR>B are normal silicene andtopological barriers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(191657, 191657)
 As a result, wefind that by applying electric and exchange fields, four groups of spin-valleycurrents are perfectly filtered, directly induced by topological phasetransitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(192076, 192077)
 The junction magnetoresistivity and domain phase transition were studiedbetween ZnO and La0.4Gd0.1Sr0.5CoO3 thin films grown on LaAlO3 (100) substratesepitaxially by pulse laser deposit.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 0.2, 'T', 5],[290.0, 4.86, '%', 5],[303.0, 6.05, '%', 5],[309.0, 140, 'K', 5]

La0.4Gd0.1Sr0.5CoO3
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(192081, 192089)
 The junction magnetoresistivity and domain phase transition were studiedbetween ZnO and La0.4Gd0.1Sr0.5CoO3 thin films grown on LaAlO3 (100) substratesepitaxially by pulse laser deposit.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 0.2, 'T', 5],[278.0, 4.86, '%', 5],[291.0, 6.05, '%', 5],[297.0, 140, 'K', 5]

LaAlO3
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(192099, 192102)
 The junction magnetoresistivity and domain phase transition were studiedbetween ZnO and La0.4Gd0.1Sr0.5CoO3 thin films grown on LaAlO3 (100) substratesepitaxially by pulse laser deposit.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 0.2, 'T', 5],[265.0, 4.86, '%', 5],[278.0, 6.05, '%', 5],[284.0, 140, 'K', 5]

Tc127
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(192149, 192150)
 The ferromagnetic transformation intophase-separated (two phase) state was displayed below Tc127 and has observedthat the lattice change discontinuously in the doped cobalt perovskitesLa0.4Gd0.1Sr0.5CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0.2, 'T', 4],[217.0, 4.86, '%', 4],[230.0, 6.05, '%', 4],[236.0, 140, 'K', 4]

La0.4Gd0.1Sr0.5CoO3
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(192180, 192188)
 The ferromagnetic transformation intophase-separated (two phase) state was displayed below Tc127 and has observedthat the lattice change discontinuously in the doped cobalt perovskitesLa0.4Gd0.1Sr0.5CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 0.2, 'T', 4],[179.0, 4.86, '%', 4],[192.0, 6.05, '%', 4],[198.0, 140, 'K', 4]

SCO
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(192220, 192222)
 The Ginzburg-Landau phase field is introduced to deduceantiferroelectric domain structure in LGSCO thin film.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 0.2, 'T', 3],[145.0, 4.86, '%', 3],[158.0, 6.05, '%', 3],[164.0, 140, 'K', 3]

Tc127
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(192298, 192299)
 The phase transformation intophase separated state occurs below Tc127-128K, and have displayed that thelattice constants change discontinuously at the transformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.2, 'T', 1],[68.0, 4.86, '%', 1],[81.0, 6.05, '%', 1],[87.0, 140, 'K', 1]

K
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(192302, 192302)
 The phase transformation intophase separated state occurs below Tc127-128K, and have displayed that thelattice constants change discontinuously at the transformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.2, 'T', 1],[65.0, 4.86, '%', 1],[78.0, 6.05, '%', 1],[84.0, 140, 'K', 1]

ZnO
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(192341, 192342)
 The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.2, 'T', 0],[25.0, 4.86, '%', 0],[38.0, 6.05, '%', 0],[44.0, 140, 'K', 0]

SCO
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(192346, 192348)
 The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.2, 'T', 0],[19.0, 4.86, '%', 0],[32.0, 6.05, '%', 0],[38.0, 140, 'K', 0]

B
###High density carriers at a strongly coupled graphene-topological insulator interface|Ayelet Zalic,Tom Dvir,Hadar Steinberg###
(192437, 192437)
 We report on a strongly coupled bilayer graphene (BLG) - bise device with ajunction resistance of less than 1.5 kOmegamum<missing VAR>2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1.5, 'k', 0],[205.0, -2, ',', 3]

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(192682, 192684)
Spin-memory loss at Co/Ru interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(192707, 192709)
 We have determined the spin-memory-loss parameter, deltaCo/Ru, bymeasuring the transmission of spin-triplet and spin-singlet Cooper pairs acrossCo/Ru interfaces in Josephson junctions and by Current-Perpendicular-to-PlaneGiant Magnetoresistance (CPP-GMR) techniques.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(192740, 192742)
 We have determined the spin-memory-loss parameter, deltaCo/Ru, bymeasuring the transmission of spin-triplet and spin-singlet Cooper pairs acrossCo/Ru interfaces in Josephson junctions and by Current-Perpendicular-to-PlaneGiant Magnetoresistance (CPP-GMR) techniques.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CPP
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(192770, 192772)
 We have determined the spin-memory-loss parameter, deltaCo/Ru, bymeasuring the transmission of spin-triplet and spin-singlet Cooper pairs acrossCo/Ru interfaces in Josephson junctions and by Current-Perpendicular-to-PlaneGiant Magnetoresistance (CPP-GMR) techniques.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(192799, 192801)
 The probability of spin-memoryloss at the Co/Ru interface is (1-exp(-deltaCo/Ru)).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(192816, 192816)
 The probability of spin-memoryloss at the Co/Ru interface is (1-exp(-deltaCo/Ru)).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(192825, 192827)
 From the CPP-MR, weobtain deltaCo/Ru  0.340.04-0.02 that is in good agreement withdeltaCo/Ru  0.35 pm 0.08 obtained from spin-triplet transmission.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(192839, 192841)
 From the CPP-MR, weobtain deltaCo/Ru  0.340.04-0.02 that is in good agreement withdeltaCo/Ru  0.35 pm 0.08 obtained from spin-triplet transmission.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(192863, 192865)
 From the CPP-MR, weobtain deltaCo/Ru  0.340.04-0.02 that is in good agreement withdeltaCo/Ru  0.35 pm 0.08 obtained from spin-triplet transmission.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(192900, 192902)
 Forspin-singlet transmission, we have deltaCo/Ru  0.64 pm 0.05 that isdifferent from that obtained from CPP-GMR and spin-triplet transmission.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CPP
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(192926, 192928)
 Forspin-singlet transmission, we have deltaCo/Ru  0.64 pm 0.05 that isdifferent from that obtained from CPP-GMR and spin-triplet transmission.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(192979, 192982)
Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates A Potential Route to Fabricate Topological Insulator p-n Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(192986, 192989)
Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates A Potential Route to Fabricate Topological Insulator p-n Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(192997, 192998)
Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates A Potential Route to Fabricate Topological Insulator p-n Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(193031, 193034)
 High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxiallygrown on GaAs (111) substrate using solid source molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(193038, 193041)
 High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxiallygrown on GaAs (111) substrate using solid source molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(193058, 193059)
 High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxiallygrown on GaAs (111) substrate using solid source molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(193101, 193102)
 Theirgrowth and behavior on both vicinal and non-vicinal GaAs (111) substrates wereinvestigated by reflection high-energy electron diffraction, atomic forcemicroscopy, x<missing VAR>-ray diffraction, and high resolution transmission electronmicroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(193169, 193170)
 It is found that non-vicinal GaAs (111) substrate is better than avicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(193199, 193202)
 It is found that non-vicinal GaAs (111) substrate is better than avicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(193206, 193209)
 It is found that non-vicinal GaAs (111) substrate is better than avicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(193231, 193234)
 Hall andmagnetoresistance measurements indicate that p<missing VAR> type Sb2Te3 and n<missing VAR> type Bi2Te3topological insulator films can be directly grown on a GaAs (111) substrate,which may pave a way to fabricate topological insulator p-n junction on thesame substrate, compatible with the fabrication process of presentsemiconductor optoelectronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(193242, 193245)
 Hall andmagnetoresistance measurements indicate that p<missing VAR> type Sb2Te3 and n<missing VAR> type Bi2Te3topological insulator films can be directly grown on a GaAs (111) substrate,which may pave a way to fabricate topological insulator p-n junction on thesame substrate, compatible with the fabrication process of presentsemiconductor optoelectronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(193266, 193267)
 Hall andmagnetoresistance measurements indicate that p<missing VAR> type Sb2Te3 and n<missing VAR> type Bi2Te3topological insulator films can be directly grown on a GaAs (111) substrate,which may pave a way to fabricate topological insulator p-n junction on thesame substrate, compatible with the fabrication process of presentsemiconductor optoelectronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSCs)
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193380, 193384)
 We studied spin transport in four organic semiconductors (OSCs) withdifferent electronic properties, with Fe and Co as the top and bottomferromagnetic (FM) contacts, respectively.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 3, ',', 3],[231.0, 4, ',', 3],[233.0, 9, ',', 3],[263.0, -1, ',', 3],[266.0, 4, ',', 3],[268.0, 5, ',', 3]

Fe
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193398, 193398)
 We studied spin transport in four organic semiconductors (OSCs) withdifferent electronic properties, with Fe and Co as the top and bottomferromagnetic (FM) contacts, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 3, ',', 3],[217.0, 4, ',', 3],[219.0, 9, ',', 3],[249.0, -1, ',', 3],[252.0, 4, ',', 3],[254.0, 5, ',', 3]

Co
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193402, 193402)
 We studied spin transport in four organic semiconductors (OSCs) withdifferent electronic properties, with Fe and Co as the top and bottomferromagnetic (FM) contacts, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 3, ',', 3],[213.0, 4, ',', 3],[215.0, 9, ',', 3],[245.0, -1, ',', 3],[248.0, 4, ',', 3],[250.0, 5, ',', 3]

F
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193418, 193418)
 We studied spin transport in four organic semiconductors (OSCs) withdifferent electronic properties, with Fe and Co as the top and bottomferromagnetic (FM) contacts, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 3, ',', 3],[197.0, 4, ',', 3],[199.0, 9, ',', 3],[229.0, -1, ',', 3],[232.0, 4, ',', 3],[234.0, 5, ',', 3]

OSC
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193464, 193466)
 Magnetoresistance (MR) effects wereobserved up to room temperature in junctions based on an electron-carrying OSC,tris(8-hyroxyquinoline) aluminum (Alq3) and a hole-carrying OSC, copperphthalocyanine (CuPc).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 3, ',', 2],[149.0, 4, ',', 2],[151.0, 9, ',', 2],[181.0, -1, ',', 2],[184.0, 4, ',', 2],[186.0, 5, ',', 2]

OSC
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193492, 193494)
 Magnetoresistance (MR) effects wereobserved up to room temperature in junctions based on an electron-carrying OSC,tris(8-hyroxyquinoline) aluminum (Alq3) and a hole-carrying OSC, copperphthalocyanine (CuPc).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 3, ',', 2],[121.0, 4, ',', 2],[123.0, 9, ',', 2],[153.0, -1, ',', 2],[156.0, 4, ',', 2],[158.0, 5, ',', 2]

Cu
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193503, 193503)
 Magnetoresistance (MR) effects wereobserved up to room temperature in junctions based on an electron-carrying OSC,tris(8-hyroxyquinoline) aluminum (Alq3) and a hole-carrying OSC, copperphthalocyanine (CuPc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 3, ',', 2],[112.0, 4, ',', 2],[114.0, 9, ',', 2],[144.0, -1, ',', 2],[147.0, 4, ',', 2],[149.0, 5, ',', 2]

OSCs
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193528, 193530)
 The MR shows similar temperature dependence for thesetwo OSCs, which suggests that the FM<missing VAR> leads rather than the OSCs play a dominantrole on the spin-transport degradation with increasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 3, ',', 1],[85.0, 4, ',', 1],[87.0, 9, ',', 1],[117.0, -1, ',', 1],[120.0, 4, ',', 1],[122.0, 5, ',', 1]

F
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193541, 193541)
 The MR shows similar temperature dependence for thesetwo OSCs, which suggests that the FM<missing VAR> leads rather than the OSCs play a dominantrole on the spin-transport degradation with increasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 3, ',', 1],[74.0, 4, ',', 1],[76.0, 9, ',', 1],[106.0, -1, ',', 1],[109.0, 4, ',', 1],[111.0, 5, ',', 1]

OSCs
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193552, 193554)
 The MR shows similar temperature dependence for thesetwo OSCs, which suggests that the FM<missing VAR> leads rather than the OSCs play a dominantrole on the spin-transport degradation with increasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 3, ',', 1],[61.0, 4, ',', 1],[63.0, 9, ',', 1],[93.0, -1, ',', 1],[96.0, 4, ',', 1],[98.0, 5, ',', 1]

OSCs
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193608, 193610)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 3, ',', 0],[5.0, 4, ',', 0],[7.0, 9, ',', 0],[37.0, -1, ',', 0],[40.0, 4, ',', 0],[42.0, 5, ',', 0]

P
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193626, 193626)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, ',', 0],[11.0, 4, ',', 0],[9.0, 9, ',', 0],[21.0, -1, ',', 0],[24.0, 4, ',', 0],[26.0, 5, ',', 0]

N
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193635, 193635)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, ',', 0],[20.0, 4, ',', 0],[18.0, 9, ',', 0],[12.0, -1, ',', 0],[15.0, 4, ',', 0],[17.0, 5, ',', 0]

N
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193639, 193639)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 3, ',', 0],[24.0, 4, ',', 0],[22.0, 9, ',', 0],[8.0, -1, ',', 0],[11.0, 4, ',', 0],[13.0, 5, ',', 0]

CF3
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193662, 193664)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 3, ',', 0],[47.0, 4, ',', 0],[45.0, 9, ',', 0],[15.0, -1, ',', 0],[12.0, 4, ',', 0],[10.0, 5, ',', 0]

N
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193666, 193666)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 3, ',', 0],[51.0, 4, ',', 0],[49.0, 9, ',', 0],[19.0, -1, ',', 0],[16.0, 4, ',', 0],[14.0, 5, ',', 0]

I
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193670, 193670)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 3, ',', 0],[55.0, 4, ',', 0],[53.0, 9, ',', 0],[23.0, -1, ',', 0],[20.0, 4, ',', 0],[18.0, 5, ',', 0]

OSC
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193709, 193711)
 Morphological studies suggest that these high mobility OSC films havemuch rougher surfaces than either Alq3 or CuPc, therefore the degradation ofspin transport may originate from enhanced scattering due to the rougher FM<missing VAR>/OSCinterfaces.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 3, ',', 2],[94.0, 4, ',', 2],[92.0, 9, ',', 2],[62.0, -1, ',', 2],[59.0, 4, ',', 2],[57.0, 5, ',', 2]

Cu
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193733, 193733)
 Morphological studies suggest that these high mobility OSC films havemuch rougher surfaces than either Alq3 or CuPc, therefore the degradation ofspin transport may originate from enhanced scattering due to the rougher FM<missing VAR>/OSCinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 3, ',', 2],[118.0, 4, ',', 2],[116.0, 9, ',', 2],[86.0, -1, ',', 2],[83.0, 4, ',', 2],[81.0, 5, ',', 2]

F
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193768, 193768)
 Morphological studies suggest that these high mobility OSC films havemuch rougher surfaces than either Alq3 or CuPc, therefore the degradation ofspin transport may originate from enhanced scattering due to the rougher FM<missing VAR>/OSCinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 3, ',', 2],[153.0, 4, ',', 2],[151.0, 9, ',', 2],[121.0, -1, ',', 2],[118.0, 4, ',', 2],[116.0, 5, ',', 2]

OSC
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193771, 193773)
 Morphological studies suggest that these high mobility OSC films havemuch rougher surfaces than either Alq3 or CuPc, therefore the degradation ofspin transport may originate from enhanced scattering due to the rougher FM<missing VAR>/OSCinterfaces.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 3, ',', 2],[156.0, 4, ',', 2],[154.0, 9, ',', 2],[124.0, -1, ',', 2],[121.0, 4, ',', 2],[119.0, 5, ',', 2]

F
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193787, 193787)
 Our study shows that FM<missing VAR>/OSC interfaces play an important role forspin transport in organic devices and need further exploration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 3, ',', 3],[172.0, 4, ',', 3],[170.0, 9, ',', 3],[140.0, -1, ',', 3],[137.0, 4, ',', 3],[135.0, 5, ',', 3]

OSC
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(193790, 193792)
 Our study shows that FM<missing VAR>/OSC interfaces play an important role forspin transport in organic devices and need further exploration.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 3, ',', 3],[175.0, 4, ',', 3],[173.0, 9, ',', 3],[143.0, -1, ',', 3],[140.0, 4, ',', 3],[138.0, 5, ',', 3]

InAs/AlSb
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(193848, 193852)
Characterization of one-dimensional quantum channels in InAs/AlSb.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[69.0, 3, 'nm', 2],[206.0, 4, 'K', 3]

InAs
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(193882, 193883)
 We report the magnetoresistance characteristics of one-dimensional electronsconfined in a single InAs quantum well sandwiched between AlSb barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 3, 'nm', 1],[175.0, 4, 'K', 2]

AlSb
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(193893, 193894)
 We report the magnetoresistance characteristics of one-dimensional electronsconfined in a single InAs quantum well sandwiched between AlSb barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 3, 'nm', 1],[164.0, 4, 'K', 2]

As
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(193899, 193899)
 As aresult of a novel nanofabrication scheme that utilizes a 3nm-shallow wetchemical etching to define the electrostatic lateral confinement, the system isfound to possess three important properties specular boundary scattering, astrong lateral confinement potential, and a conducting channel width that isapproximately the lithography width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, 'nm', 0],[159.0, 4, 'K', 1]

In
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(194074, 194074)
 In a ring geometry, we have observed Aharonov-Bohm interference thatexhibits characteristics different from those of the GaAs counterpart due tothe ballistic nature of electron transport and the narrowness of the conductingchannel width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 3, 'nm', 2],[16.0, 4, 'K', 1]

GaAs
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(194112, 194113)
 In a ring geometry, we have observed Aharonov-Bohm interference thatexhibits characteristics different from those of the GaAs counterpart due tothe ballistic nature of electron transport and the narrowness of the conductingchannel width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 3, 'nm', 2],[54.0, 4, 'K', 1]

Co/Cu
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(194183, 194185)
 A thin Co/Cu/Permalloy (Ni80Fe20) pseudo-spin-valve structure issandwiched between superconducting Nb contacts.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[77.0, 4.2, 'K', 1]

(Ni80Fe20)
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(194189, 194194)
 A thin Co/Cu/Permalloy (Ni80Fe20) pseudo-spin-valve structure issandwiched between superconducting Nb contacts.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 4.2, 'K', 1]

Nb
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(194213, 194213)
 A thin Co/Cu/Permalloy (Ni80Fe20) pseudo-spin-valve structure issandwiched between superconducting Nb contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 4.2, 'K', 1]

(IC)
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(194251, 194254)
 When the current is passedperpendicular to the plane of the film a Josephson critical current (IC) isobserved at 4.2 K, in addition to a magnetoresistance (MR) of sim 0.5 % athigh bias.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 4.2, 'K', 0]

IC
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(194329, 194330)
 The hysteresis loop of the spin-valve structure can be cycled tomodulate the zero field IC of the junction in line with the MR measurements.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 4.2, 'K', 1]

IC
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(194363, 194364)
These modulations of resistance and IC occur both smoothly and sharply withthe applied field.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 4.2, 'K', 2]

IC
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(194424, 194425)
 For each type of behaviour there is a strong correlationbetween shape of the MR loops and the IC modulation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 4.2, 'K', 3]

At
###Giant resistance change across the phase transition in spin crossover molecules|N. Baadji,S. Sanvito###
(194538, 194538)
 At the spin crossover phase transitionthere is a drastic change in the electronic gap between the frontier molecularorbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 3, ',', 2]

As
###Giant resistance change across the phase transition in spin crossover molecules|N. Baadji,S. Sanvito###
(194581, 194581)
 As a consequence, when the molecule is incorporated in a two terminaldevice, the current increases by up to four orders of magnitude in response tothe spin change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 3, ',', 1]

NbN
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(194767, 194768)
Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 2, 'D', 6]

(SC)
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(194791, 194794)
 The emerging field of superconductor (SC) spintronics has attracted intensiveattentions recently.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 2, 'D', 5]

SC
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(194822, 194823)
 Many fantastic spin dependent properties in SC have beendiscovered, including the observation of large magnetoresistance, long spinlifetimes and the giant spin Hall effect in SC, as well as spin supercurrent inJosephson junctions, etc.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 2, 'D', 4]

SC
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(194867, 194868)
 Many fantastic spin dependent properties in SC have beendiscovered, including the observation of large magnetoresistance, long spinlifetimes and the giant spin Hall effect in SC, as well as spin supercurrent inJosephson junctions, etc.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 2, 'D', 4]

SC
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(194902, 194903)
 Regarding the spin dynamic in SC films, few studieshas been reported yet.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 2, 'D', 3]

NbN
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(194952, 194953)
 Here, we report the investigation of the spin dynamicsin an s<missing VAR>-wave superconducting NbN film via spin pumping from an adjacentinsulating ferromagnet GdN layer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'D', 2]

GdN
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(194974, 194975)
 Here, we report the investigation of the spin dynamicsin an s<missing VAR>-wave superconducting NbN film via spin pumping from an adjacentinsulating ferromagnet GdN layer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'D', 2]

NbN
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(195018, 195019)
 A profound coherence peak of the Gilbertdamping is observed slightly below the superconducting critical temperature ofthe NbN layer, which is consistent with recent theoretical studies.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2, 'D', 1]

BK
###Charging effects and anomalous resistive features of superconducting boron doped diamond films|Christopher Coleman,Somnath Bhattacharyya###
(195251, 195252)
 We establish a temperature dependence of this resistive phase similar towhat has been reported for in Josephson junction arrays and other granularsuperconductors where the charge duel of the Berezinskii-Kosterlitz-Thouless(BKT) transition has been observed.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BK
###Charging effects and anomalous resistive features of superconducting boron doped diamond films|Christopher Coleman,Somnath Bhattacharyya###
(195329, 195330)
Pronounced temperature dependent hysteresis in the current voltage sweeps attemperatures below the determined BKT<missing VAR> critical point are related to pinning ofcharge defects.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BK
###Charging effects and anomalous resistive features of superconducting boron doped diamond films|Christopher Coleman,Somnath Bhattacharyya###
(195376, 195377)
 It is shown that these collective features allude to aCharge-BKT<missing VAR> transition between charge and anti-charge analogues.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195527, 195527)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 80, '%', 2],[131.0, 140, '%', 2],[174.0, 90, '%', 2]

CH3S
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195530, 195533)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 80, '%', 2],[125.0, 140, '%', 2],[168.0, 90, '%', 2]

COOH
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195536, 195539)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0.25,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 80, '%', 2],[119.0, 140, '%', 2],[162.0, 90, '%', 2]

CNH2NH
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195542, 195547)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0.5,0,0,0,0,0.16666666666666666,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 80, '%', 2],[111.0, 140, '%', 2],[154.0, 90, '%', 2]

NC
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195550, 195551)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 80, '%', 2],[107.0, 140, '%', 2],[150.0, 90, '%', 2]

O2
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195557, 195558)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 80, '%', 2],[100.0, 140, '%', 2],[143.0, 90, '%', 2]

(SP)
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195593, 195596)
 We find that molecule-electrode coupling,conductance and spin polarization (SP) of electric current can be modifiedsignificantly by anchoring groups.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 80, '%', 1],[62.0, 140, '%', 1],[105.0, 90, '%', 1]

In
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195620, 195620)
 In particular, a high spin polarization (SP> 80%) and a giant magnetoresistance (MR > 140%) can be achieved for NO2terminations and, more interestingly, SP can be further enhanced (up to 90%) bya small voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 80, '%', 0],[38.0, 140, '%', 0],[81.0, 90, '%', 0]

SP
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195634, 195635)
 In particular, a high spin polarization (SP> 80%) and a giant magnetoresistance (MR > 140%) can be achieved for NO2terminations and, more interestingly, SP can be further enhanced (up to 90%) bya small voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 80, '%', 0],[23.0, 140, '%', 0],[66.0, 90, '%', 0]

NO2
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195670, 195672)
 In particular, a high spin polarization (SP> 80%) and a giant magnetoresistance (MR > 140%) can be achieved for NO2terminations and, more interestingly, SP can be further enhanced (up to 90%) bya small voltage.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 80, '%', 0],[12.0, 140, '%', 0],[29.0, 90, '%', 0]

SP
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195685, 195686)
 In particular, a high spin polarization (SP> 80%) and a giant magnetoresistance (MR > 140%) can be achieved for NO2terminations and, more interestingly, SP can be further enhanced (up to 90%) bya small voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 80, '%', 0],[27.0, 140, '%', 0],[15.0, 90, '%', 0]

S
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195717, 195717)
 The S and CH3S systems, on the contrary, exhibit rather lowSP while intermediate values are found for COOH and CNH2NH groups.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 80, '%', 1],[59.0, 140, '%', 1],[16.0, 90, '%', 1]

CH3S
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195721, 195724)
 The S and CH3S systems, on the contrary, exhibit rather lowSP while intermediate values are found for COOH and CNH2NH groups.
Featurization terminated normally.
0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 80, '%', 1],[63.0, 140, '%', 1],[20.0, 90, '%', 1]

SP
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195743, 195744)
 The S and CH3S systems, on the contrary, exhibit rather lowSP while intermediate values are found for COOH and CNH2NH groups.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 80, '%', 1],[85.0, 140, '%', 1],[42.0, 90, '%', 1]

COOH
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195758, 195761)
 The S and CH3S systems, on the contrary, exhibit rather lowSP while intermediate values are found for COOH and CNH2NH groups.
Featurization terminated normally.
0.25,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 80, '%', 1],[100.0, 140, '%', 1],[57.0, 90, '%', 1]

CNH2NH
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(195765, 195770)
 The S and CH3S systems, on the contrary, exhibit rather lowSP while intermediate values are found for COOH and CNH2NH groups.
Featurization terminated normally.
0.5,0,0,0,0,0.16666666666666666,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 80, '%', 1],[107.0, 140, '%', 1],[64.0, 90, '%', 1]

InAs/AlSb
###Electrical spin injection and detection in a semiconductor. Is it feasible?|A. T. Filip,B. H. Hoving,F. J. Jedema,B. J. van Wees###
(196048, 196052)
 Westudied submicron lateral spin valve junctions, based on high mobilityInAs/AlSb two-dimensional electron gas (2DEG), with Ni, Co and Permalloy asferromagnetic electrodes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ni
###Electrical spin injection and detection in a semiconductor. Is it feasible?|A. T. Filip,B. H. Hoving,F. J. Jedema,B. J. van Wees###
(196072, 196072)
 Westudied submicron lateral spin valve junctions, based on high mobilityInAs/AlSb two-dimensional electron gas (2DEG), with Ni, Co and Permalloy asferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Electrical spin injection and detection in a semiconductor. Is it feasible?|A. T. Filip,B. H. Hoving,F. J. Jedema,B. J. van Wees###
(196075, 196075)
 Westudied submicron lateral spin valve junctions, based on high mobilityInAs/AlSb two-dimensional electron gas (2DEG), with Ni, Co and Permalloy asferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrical spin injection and detection in a semiconductor. Is it feasible?|A. T. Filip,B. H. Hoving,F. J. Jedema,B. J. van Wees###
(196089, 196089)
 In the standard geometry it is very difficult toseparate true spin injection from other effects, including local Hall effect,anomalous magnetoresistance (AMR) contribution from the ferromagneticelectrodes and weak localization/anti-localization corrections, which canclosely mimic the signal expected from spin valve effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196344, 196350)
Point contact investigations of film and interface magnetoresistance of La0.7Sr0.3MnO3 heterostructures on NbSrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 32, 'nm', 1],[125.0, -1.5, '%', 2]

NbSrTiO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196356, 196360)
Point contact investigations of film and interface magnetoresistance of La0.7Sr0.3MnO3 heterostructures on NbSrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 32, 'nm', 1],[115.0, -1.5, '%', 2]

S
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196363, 196363)
 STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 32, 'nm', 0],[112.0, -1.5, '%', 1]

La0.7Sr0.3MnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196378, 196384)
 STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 32, 'nm', 0],[91.0, -1.5, '%', 1]

LaMnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196402, 196405)
 STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 32, 'nm', 0],[70.0, -1.5, '%', 1]

Nb
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196423, 196423)
 STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 32, 'nm', 0],[52.0, -1.5, '%', 1]

SrTiO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196427, 196430)
 STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 32, 'nm', 0],[45.0, -1.5, '%', 1]

I
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196516, 196516)
 One LFMR contribution is identified as aconventional grain boundary/domain wall scattering through the symmetric I-Vcharacteristics, high dependence on tip placements and insensitivity tointroduction of LaMnO3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 32, 'nm', 2],[41.0, -1.5, '%', 1]

V
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196518, 196518)
 One LFMR contribution is identified as aconventional grain boundary/domain wall scattering through the symmetric I-Vcharacteristics, high dependence on tip placements and insensitivity tointroduction of LaMnO3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 32, 'nm', 2],[43.0, -1.5, '%', 1]

LaMnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196545, 196548)
 One LFMR contribution is identified as aconventional grain boundary/domain wall scattering through the symmetric I-Vcharacteristics, high dependence on tip placements and insensitivity tointroduction of LaMnO3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 32, 'nm', 2],[70.0, -1.5, '%', 1]

Nb
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196570, 196570)
 The other contribution originates from thereverse biased Nb doped SrTiO3 interface and the interface layer ofLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 32, 'nm', 3],[95.0, -1.5, '%', 2]

SrTiO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196574, 196577)
 The other contribution originates from thereverse biased Nb doped SrTiO3 interface and the interface layer ofLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 32, 'nm', 3],[99.0, -1.5, '%', 2]

La0.7Sr0.3MnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196592, 196598)
 The other contribution originates from thereverse biased Nb doped SrTiO3 interface and the interface layer ofLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 32, 'nm', 3],[117.0, -1.5, '%', 2]

LaMnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(196645, 196648)
 LaMnO3layers are found to reduce the rectifying properties of the junctions, and submicron lateral patterning by electron beam lithography enhances the diodicproperties, in accordance with a proposed transport model based on the localityof the injected current.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 32, 'nm', 5],[170.0, -1.5, '%', 4]

F
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(196806, 196806)
 We present the combination of Density Functional Theory (DFT) and DynamicalMean Field Theory (DMFT) for computing the electron transmission throughtwo-terminals nanoscale devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 1, 'eV', 5]

Cu
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(196853, 196853)
 The method is then applied to metallicjunctions presenting alternating Cu and Co layers, which exhibit spin-dependentcharge transport and giant magnetoresistance (GMR) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 1, 'eV', 4]

Co
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(196857, 196857)
 The method is then applied to metallicjunctions presenting alternating Cu and Co layers, which exhibit spin-dependentcharge transport and giant magnetoresistance (GMR) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 1, 'eV', 4]

F
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(196986, 196986)
 This is mainly due to the finite lifetimeinduced by the electron-electron interaction and is directly related to theimaginary part of the computed many-body DMFT<missing VAR> self-energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 1, 'eV', 2]

At
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(196994, 196994)
 At the Fermi energy,where in accordance with the Fermi-liquid behavior the imaginary part of theself-energy vanishes, the suppression of the transmission is entirely due tothe shifts of the energy spectrum induced by electron correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 1, 'eV', 1]

Cu/Co
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(197104, 197106)
 Based ourresults, we finally suggest that the GMR measured in Cu/Co heterostructures forelectrons with energies about 1 eV above the Fermi energy is a clearmanifestation of dynamical correlation effects.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 1, 'eV', 0]

As
###Observation of Quantum Interference in Molecular Charge Transport|Constant M. Guedon,Hennie Valkenier,Troels Markussen,Kristian S. Thygesen,Jan C. Hummelen,Sense Jan van der Molen###
(197173, 197173)
 As the dimensions of a conductor approach the nano-scale, quantum effectswill begin to dominate its behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 300, 'K', 5]

As
###Observation of Quantum Interference in Molecular Charge Transport|Constant M. Guedon,Hennie Valkenier,Troels Markussen,Kristian S. Thygesen,Jan C. Hummelen,Sense Jan van der Molen###
(197363, 197363)
 Asmolecules are nano-scale objects with typical energy level spacings (e<missing VAR>V) muchlarger than the thermal energy at 300 K (25 meV), they are natural candidatesto enable such a break-through.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 300, 'K', 0]

V
###Observation of Quantum Interference in Molecular Charge Transport|Constant M. Guedon,Hennie Valkenier,Troels Markussen,Kristian S. Thygesen,Jan C. Hummelen,Sense Jan van der Molen###
(197388, 197388)
 Asmolecules are nano-scale objects with typical energy level spacings (e<missing VAR>V) muchlarger than the thermal energy at 300 K (25 meV), they are natural candidatesto enable such a break-through.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 300, 'K', 0]

V
###Observation of Quantum Interference in Molecular Charge Transport|Constant M. Guedon,Hennie Valkenier,Troels Markussen,Kristian S. Thygesen,Jan C. Hummelen,Sense Jan van der Molen###
(197411, 197411)
 Asmolecules are nano-scale objects with typical energy level spacings (e<missing VAR>V) muchlarger than the thermal energy at 300 K (25 meV), they are natural candidatesto enable such a break-through.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 300, 'K', 0]

