Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao|MgO/CoFeB|249|%|0.4148936170212766|mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.|Here, we report spin transfer torque switching in nano-scaleperpendicular magnetic tunnel junctions with a magnetoresistance ratio up to249% and a resistance area product as low as 7.0 Omega.
Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono|CoFeB/MgO/CoFeB|200|%|1.0|We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).|We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).
L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang|FePd|25|%|0.3387096774193548|Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.|Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang|FePd|60|%|0.24285714285714285|Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.|Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu|Tb/Co|74|%|0.0594059405940594|Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions.|Thenanofabricated magnetic tunnel junction devices have an optimized bottomreference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to74% after patterning down to sub-100nm lateral dimensions.
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|65.5|%|0.011194029850746268|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|10|%|0.009978991596638655|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss|Ta/Pd|14|%|0.004213483146067416|We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.|Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski|Co60Fe20B20/MgO/Co60Fe20B20|30|%|0.010673234811165846|Here we present direct measurements of boththe magnitude and direction of the spin torque in Co60Fe20B20/MgO/Co60Fe20B20MTJs.|The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan|FeRh|20|%|1.0|The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.|The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami|MgO|87|%|0.5|Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.|The saturation magnetization is 380emu/cm3, almost the same as the value given by the Slater--Pauling--likerule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87%and 165%, respectively.
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami|MgO|165|%|0.5|Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.|The saturation magnetization is 380emu/cm3, almost the same as the value given by the Slater--Pauling--likerule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87%and 165%, respectively.
Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa|ZnO|96|%|0.5|We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.|We observe a high magnetoresistance ratio up to 96% at roomtemperature (RT) and find that these MTJs have asymmetric current-voltagecharacteristics, and their rectifying performances are largely dependent on themagnetization alignments of the Fe electrodes.
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti|Fe2CrTe/MgO/Fe2CrTe|1000|%|0.5|Transmission profile ofthe Fe2CrTe/MgO/Fe2CrTe heterojunction has been calculated to probe it asa magnetic tunneling junction (MTJ) material in both the cubic and tetragonalphases.|Considerably large tunneling magnetoresistance ratio (TMR) of 1000% isobserved for the tetragonal phase, which is found to be one order of magnitudelarger than that of the cubic phase.
