MgO/CoFeB
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(56, 61)
 Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are ofparticular interest for magnetic random-access memories because of theirexcellent thermal stability, scaling potential, and power dissipation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[153.0, 249, '%', 2],[178.0, 2, ',', 3],[312.0, 3.0, 'MA', 5],[325.0, 45, 'nm', 6]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(253, 253)
mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 249, '%', 1],[14.0, 2, ',', 0],[120.0, 3.0, 'MA', 2],[133.0, 45, 'nm', 3]

MgO/CoFeB
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(261, 266)
mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[47.0, 249, '%', 1],[22.0, 2, ',', 0],[107.0, 3.0, 'MA', 2],[120.0, 45, 'nm', 3]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(292, 292)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 249, '%', 2],[53.0, 2, ',', 1],[81.0, 3.0, 'MA', 1],[94.0, 45, 'nm', 2]

Ta
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(320, 320)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 249, '%', 2],[81.0, 2, ',', 1],[53.0, 3.0, 'MA', 1],[66.0, 45, 'nm', 2]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(337, 337)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 249, '%', 2],[98.0, 2, ',', 1],[36.0, 3.0, 'MA', 1],[49.0, 45, 'nm', 2]

CoFeB/MgO/CoFeB
###Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono###
(409, 418)
Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 200, '%', 1],[64.0, 3, 'K', 1]

CoFeB/MgO/CoFeB
###Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono###
(443, 452)
 We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[26.0, 200, '%', 0],[30.0, 3, 'K', 0]

P
###Superpoissonian shot noise in organic magnetic tunnel junctions|Juan Pedro Cascales,Jhen-Yong Hong,Isidoro Martinez,Minn-Tsong Lin,Tomasz Szczepanski,Vitalii K. Dugaev,Jozef Barnas,Farkad G. Aliev###
(705, 705)
 Here we investigate conductance and shotnoise in magnetic tunnel junctions with PTCDA barriers a few nm thick.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 10, 'and', 1],[43.0, 40, '%', 1]

P
###Superpoissonian shot noise in organic magnetic tunnel junctions|Juan Pedro Cascales,Jhen-Yong Hong,Isidoro Martinez,Minn-Tsong Lin,Tomasz Szczepanski,Vitalii K. Dugaev,Jozef Barnas,Farkad G. Aliev###
(875, 875)
 We explain our main findings in terms of a model which includestunneling through a two level (or multilevel) system, originated frominterfacial bonds of the PTCDA molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 10, 'and', 2],[127.0, 40, '%', 2]

Fe
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(940, 940)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 25, '%', 6],[337.0, 60, '%', 6],[364.0, 350, 'C', 6]

Pd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(942, 942)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 25, '%', 6],[335.0, 60, '%', 6],[362.0, 350, 'C', 6]

Ru
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(954, 954)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 25, '%', 6],[323.0, 60, '%', 6],[350.0, 350, 'C', 6]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(991, 991)
 Magnetic materials that possess large bulk perpendicular magnetic anisotropy(PM<missing VAR>A) are essential for the development of magnetic tunnel junctions (MTJs)used in future spintronic memory and logic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 25, '%', 5],[286.0, 60, '%', 5],[313.0, 350, 'C', 5]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1104, 1104)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 25, '%', 3],[173.0, 60, '%', 3],[200.0, 350, 'C', 3]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1106, 1106)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 25, '%', 3],[171.0, 60, '%', 3],[198.0, 350, 'C', 3]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1108, 1108)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 25, '%', 3],[169.0, 60, '%', 3],[196.0, 350, 'C', 3]

FePd/Ru/FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1127, 1133)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[140.0, 25, '%', 3],[144.0, 60, '%', 3],[171.0, 350, 'C', 3]

Ru
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1153, 1153)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 25, '%', 3],[124.0, 60, '%', 3],[151.0, 350, 'C', 3]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1164, 1165)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 25, '%', 2],[112.0, 60, '%', 2],[139.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1167, 1167)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 25, '%', 2],[110.0, 60, '%', 2],[137.0, 350, 'C', 2]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1169, 1169)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 25, '%', 2],[108.0, 60, '%', 2],[135.0, 350, 'C', 2]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1171, 1171)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 25, '%', 2],[106.0, 60, '%', 2],[133.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1184, 1184)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 25, '%', 2],[93.0, 60, '%', 2],[120.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1227, 1227)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 25, '%', 1],[50.0, 60, '%', 1],[77.0, 350, 'C', 1]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1241, 1242)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 25, '%', 1],[35.0, 60, '%', 1],[62.0, 350, 'C', 1]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1244, 1244)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 25, '%', 1],[33.0, 60, '%', 1],[60.0, 350, 'C', 1]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1246, 1246)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 25, '%', 1],[31.0, 60, '%', 1],[58.0, 350, 'C', 1]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1248, 1248)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 25, '%', 1],[29.0, 60, '%', 1],[56.0, 350, 'C', 1]

K
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1294, 1294)
 Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 25, '%', 0],[17.0, 60, '%', 0],[10.0, 350, 'C', 0]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1327, 1327)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 25, '%', 1],[50.0, 60, '%', 1],[23.0, 350, 'C', 1]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1340, 1341)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 25, '%', 1],[63.0, 60, '%', 1],[36.0, 350, 'C', 1]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1343, 1343)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 25, '%', 1],[66.0, 60, '%', 1],[39.0, 350, 'C', 1]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1345, 1345)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 25, '%', 1],[68.0, 60, '%', 1],[41.0, 350, 'C', 1]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1347, 1347)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 25, '%', 1],[70.0, 60, '%', 1],[43.0, 350, 'C', 1]

Co
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(1432, 1432)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 73, '%', 1],[77.0, 323, '%', 1],[157.0, 65, '%', 3],[166.0, 173, '%', 3],[176.0, 78, '%', 3]

Fe
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(1434, 1434)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 73, '%', 1],[75.0, 323, '%', 1],[155.0, 65, '%', 3],[164.0, 173, '%', 3],[174.0, 78, '%', 3]

B
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(1436, 1436)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 73, '%', 1],[73.0, 323, '%', 1],[153.0, 65, '%', 3],[162.0, 173, '%', 3],[172.0, 78, '%', 3]

Co
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(1442, 1442)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 73, '%', 1],[67.0, 323, '%', 1],[147.0, 65, '%', 3],[156.0, 173, '%', 3],[166.0, 78, '%', 3]

Fe
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(1444, 1444)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 73, '%', 1],[65.0, 323, '%', 1],[145.0, 65, '%', 3],[154.0, 173, '%', 3],[164.0, 78, '%', 3]

B
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(1446, 1446)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 73, '%', 1],[63.0, 323, '%', 1],[143.0, 65, '%', 3],[152.0, 173, '%', 3],[162.0, 78, '%', 3]

In
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(1557, 1557)
 In these systems, the tunnelmagnetoresistance ratios at optimum annealing temperatures were found to be 65%for alumina, 173% for magnesia, and 78% for the composite tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 73, '%', 2],[48.0, 323, '%', 2],[32.0, 65, '%', 0],[41.0, 173, '%', 0],[51.0, 78, '%', 0]

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(1698, 1699)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 4, 'K', 2],[185.0, 270, 'K', 4]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(1702, 1703)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4, 'K', 2],[181.0, 270, 'K', 4]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(1706, 1708)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 4, 'K', 2],[176.0, 270, 'K', 4]

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(1729, 1730)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 4, 'K', 1],[154.0, 270, 'K', 3]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(1733, 1734)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4, 'K', 1],[150.0, 270, 'K', 3]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(1737, 1739)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 4, 'K', 1],[145.0, 270, 'K', 3]

SrTiO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(1743, 1746)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 4, 'K', 1],[138.0, 270, 'K', 3]

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(1751, 1752)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4, 'K', 1],[132.0, 270, 'K', 3]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(1755, 1756)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 4, 'K', 1],[128.0, 270, 'K', 3]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(1759, 1761)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 4, 'K', 1],[123.0, 270, 'K', 3]

MgO
###Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers|Patryk Krzysteczko,Xinli Kou,Karsten Rott,Andy Thomas,Günter Reiss###
(1957, 1958)
Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4.4, 'ohm', 2]

MgO
###Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers|Patryk Krzysteczko,Xinli Kou,Karsten Rott,Andy Thomas,Günter Reiss###
(1981, 1982)
 Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriersare prepared to examine their stability under large current stress.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 4.4, 'ohm', 1]

MgO
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2215, 2216)
Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2254, 2254)
 We prepared magnetic tunnel junctions with one ferromagnetic and onesuperconducting Al-Si electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2256, 2256)
 We prepared magnetic tunnel junctions with one ferromagnetic and onesuperconducting Al-Si electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2276, 2276)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2278, 2278)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2280, 2280)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2292, 2295)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2404, 2404)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2406, 2406)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2408, 2408)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2411, 2412)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2415, 2415)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2417, 2417)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(2419, 2419)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(2493, 2498)
 We report an extensive first-principles investigation of impurity-induceddevice-to-device variability of spin-polarized quantum tunneling throughFe/MgO/Fe magnetic tunnel junctions (MTJ).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(2513, 2513)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(2565, 2565)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(2578, 2583)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(2600, 2600)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(2604, 2605)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(2622, 2627)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(2661, 2661)
 Our first-principles calculations of the fluctuations ofthe on/off currents and STT provide vital information for future predictions ofthe long-term reliability of spintronic devices, which is imperative forhigh-volume production.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Effect of Image Potential on Spin Polarized Transport through Magnetic Tunnel Junctions|Tehseen Zahra Raza,Hassan Raza###
(2769, 2774)
 We study the effect of image potential on spin polarized transport throughFe/MgO/Fe magnetic tunnel junctions in the presence of symmetry filtering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Gigantic tunneling magnetoresistance in magnetic Weyl semimetal tunnel junctions|D. J. P. de Sousa,C. O. Ascencio,P. M. Haney,J. P. Wang,Tony Low###
(3156, 3156)
 In addition, we show that theFermi arc states give rise to a non-monotonic dependence of conductance on themisalignment angle between the magnetizations of the two contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tb/Co
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(3246, 3248)
Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[111.0, 50, 'fs', 2],[202.0, 74, '%', 3]

In
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(3343, 3343)
 In this work we demonstrate successfulfield-free 50fs single laser pulse driven magnetization reversal of [Tb/Co]based storage layer in a perpendicular magnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 50, 'fs', 0],[107.0, 74, '%', 1]

Co
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(3378, 3378)
 In this work we demonstrate successfulfield-free 50fs single laser pulse driven magnetization reversal of [Tb/Co]based storage layer in a perpendicular magnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 50, 'fs', 0],[72.0, 74, '%', 1]

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(3755, 3755)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(3759, 3759)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(3773, 3778)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(3799, 3799)
 We report on systematic ab-initio investigations of Co and Cr interlayersembedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on thechanges of the electronic structure and the transport properties withinterlayer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(3803, 3803)
 We report on systematic ab-initio investigations of Co and Cr interlayersembedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on thechanges of the electronic structure and the transport properties withinterlayer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(3946, 3946)
 The resistance area products and the tunnelmagnetoresistance ratios show a monotonous trend with distinct oscillations asa function of the Cr thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(3980, 3980)
 These modulations are directly addressed andinterpreted by means of magnetic structures in the Cr films and by complex bandstructure effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(4006, 4006)
 The characteristics for embedded Co interlayers areconsiderably influenced by interface resonances which are analyzed by the localelectronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4069, 4071)
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 79.6, ',', 2],[183.0, 0.3, ',', 2],[196.0, 1.05, ',', 3],[235.0, 0.4, ',', 4],[241.0, 2, ',', 4],[249.0, 1.2, ',', 4],[281.0, 330, ',', 4],[287.0, 60, 'min', 4],[325.0, 340, ',', 4],[331.0, 60, 'min', 4],[354.0, 65.5, '%', 5],[369.0, 300, ',', 5],[375.0, 60, 'min', 5],[391.0, 10, '%', 5],[408.0, 330, ',', 5],[420.0, 14, '%', 5],[436.0, 300, ',', 5],[442.0, 90, 'min', 5]

Ta
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4126, 4126)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 79.6, ',', 1],[128.0, 0.3, ',', 1],[141.0, 1.05, ',', 2],[180.0, 0.4, ',', 3],[186.0, 2, ',', 3],[194.0, 1.2, ',', 3],[226.0, 330, ',', 3],[232.0, 60, 'min', 3],[270.0, 340, ',', 3],[276.0, 60, 'min', 3],[299.0, 65.5, '%', 4],[314.0, 300, ',', 4],[320.0, 60, 'min', 4],[336.0, 10, '%', 4],[353.0, 330, ',', 4],[365.0, 14, '%', 4],[381.0, 300, ',', 4],[387.0, 90, 'min', 4]

Ta/Pd/IrMn/CoFe
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4187, 4195)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[49.0, 79.6, ',', 1],[59.0, 0.3, ',', 1],[72.0, 1.05, ',', 2],[111.0, 0.4, ',', 3],[117.0, 2, ',', 3],[125.0, 1.2, ',', 3],[157.0, 330, ',', 3],[163.0, 60, 'min', 3],[201.0, 340, ',', 3],[207.0, 60, 'min', 3],[230.0, 65.5, '%', 4],[245.0, 300, ',', 4],[251.0, 60, 'min', 4],[267.0, 10, '%', 4],[284.0, 330, ',', 4],[296.0, 14, '%', 4],[312.0, 300, ',', 4],[318.0, 90, 'min', 4]

Ta
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4197, 4197)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 79.6, ',', 1],[57.0, 0.3, ',', 1],[70.0, 1.05, ',', 2],[109.0, 0.4, ',', 3],[115.0, 2, ',', 3],[123.0, 1.2, ',', 3],[155.0, 330, ',', 3],[161.0, 60, 'min', 3],[199.0, 340, ',', 3],[205.0, 60, 'min', 3],[228.0, 65.5, '%', 4],[243.0, 300, ',', 4],[249.0, 60, 'min', 4],[265.0, 10, '%', 4],[282.0, 330, ',', 4],[294.0, 14, '%', 4],[310.0, 300, ',', 4],[316.0, 90, 'min', 4]

O
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4208, 4208)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 79.6, ',', 1],[46.0, 0.3, ',', 1],[59.0, 1.05, ',', 2],[98.0, 0.4, ',', 3],[104.0, 2, ',', 3],[112.0, 1.2, ',', 3],[144.0, 330, ',', 3],[150.0, 60, 'min', 3],[188.0, 340, ',', 3],[194.0, 60, 'min', 3],[217.0, 65.5, '%', 4],[232.0, 300, ',', 4],[238.0, 60, 'min', 4],[254.0, 10, '%', 4],[271.0, 330, ',', 4],[283.0, 14, '%', 4],[299.0, 300, ',', 4],[305.0, 90, 'min', 4]

B
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4216, 4216)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 79.6, ',', 1],[38.0, 0.3, ',', 1],[51.0, 1.05, ',', 2],[90.0, 0.4, ',', 3],[96.0, 2, ',', 3],[104.0, 1.2, ',', 3],[136.0, 330, ',', 3],[142.0, 60, 'min', 3],[180.0, 340, ',', 3],[186.0, 60, 'min', 3],[209.0, 65.5, '%', 4],[224.0, 300, ',', 4],[230.0, 60, 'min', 4],[246.0, 10, '%', 4],[263.0, 330, ',', 4],[275.0, 14, '%', 4],[291.0, 300, ',', 4],[297.0, 90, 'min', 4]

Ta/Pd
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4222, 4224)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 79.6, ',', 1],[30.0, 0.3, ',', 1],[43.0, 1.05, ',', 2],[82.0, 0.4, ',', 3],[88.0, 2, ',', 3],[96.0, 1.2, ',', 3],[128.0, 330, ',', 3],[134.0, 60, 'min', 3],[172.0, 340, ',', 3],[178.0, 60, 'min', 3],[201.0, 65.5, '%', 4],[216.0, 300, ',', 4],[222.0, 60, 'min', 4],[238.0, 10, '%', 4],[255.0, 330, ',', 4],[267.0, 14, '%', 4],[283.0, 300, ',', 4],[289.0, 90, 'min', 4]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4355, 4355)
 For stacks withx<missing VAR>0.4,nm, y<missing VAR>2,nm, and z<missing VAR>1.20,nm, the exchange bias presents asignificant decrease at post annealing temperatureT<missing VAR>textrmann330,circC for 60 min, while the interlayer exchangecoupling and the saturation magnetization per unit area sharply decay atT<missing VAR>textrmann340,circC for 60 min.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 79.6, ',', 2],[101.0, 0.3, ',', 2],[88.0, 1.05, ',', 1],[49.0, 0.4, ',', 0],[43.0, 2, ',', 0],[35.0, 1.2, ',', 0],[3.0, 330, ',', 0],[3.0, 60, 'min', 0],[41.0, 340, ',', 0],[47.0, 60, 'min', 0],[70.0, 65.5, '%', 1],[85.0, 300, ',', 1],[91.0, 60, 'min', 1],[107.0, 10, '%', 1],[124.0, 330, ',', 1],[136.0, 14, '%', 1],[152.0, 300, ',', 1],[158.0, 90, 'min', 1]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4399, 4399)
 For stacks withx<missing VAR>0.4,nm, y<missing VAR>2,nm, and z<missing VAR>1.20,nm, the exchange bias presents asignificant decrease at post annealing temperatureT<missing VAR>textrmann330,circC for 60 min, while the interlayer exchangecoupling and the saturation magnetization per unit area sharply decay atT<missing VAR>textrmann340,circC for 60 min.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 79.6, ',', 2],[145.0, 0.3, ',', 2],[132.0, 1.05, ',', 1],[93.0, 0.4, ',', 0],[87.0, 2, ',', 0],[79.0, 1.2, ',', 0],[47.0, 330, ',', 0],[41.0, 60, 'min', 0],[3.0, 340, ',', 0],[3.0, 60, 'min', 0],[26.0, 65.5, '%', 1],[41.0, 300, ',', 1],[47.0, 60, 'min', 1],[63.0, 10, '%', 1],[80.0, 330, ',', 1],[92.0, 14, '%', 1],[108.0, 300, ',', 1],[114.0, 90, 'min', 1]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4443, 4443)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 79.6, ',', 3],[189.0, 0.3, ',', 3],[176.0, 1.05, ',', 2],[137.0, 0.4, ',', 1],[131.0, 2, ',', 1],[123.0, 1.2, ',', 1],[91.0, 330, ',', 1],[85.0, 60, 'min', 1],[47.0, 340, ',', 1],[41.0, 60, 'min', 1],[18.0, 65.5, '%', 0],[3.0, 300, ',', 0],[3.0, 60, 'min', 0],[19.0, 10, '%', 0],[36.0, 330, ',', 0],[48.0, 14, '%', 0],[64.0, 300, ',', 0],[70.0, 90, 'min', 0]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4482, 4482)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 79.6, ',', 3],[228.0, 0.3, ',', 3],[215.0, 1.05, ',', 2],[176.0, 0.4, ',', 1],[170.0, 2, ',', 1],[162.0, 1.2, ',', 1],[130.0, 330, ',', 1],[124.0, 60, 'min', 1],[86.0, 340, ',', 1],[80.0, 60, 'min', 1],[57.0, 65.5, '%', 0],[42.0, 300, ',', 0],[36.0, 60, 'min', 0],[20.0, 10, '%', 0],[3.0, 330, ',', 0],[9.0, 14, '%', 0],[25.0, 300, ',', 0],[31.0, 90, 'min', 0]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(4510, 4510)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 79.6, ',', 3],[256.0, 0.3, ',', 3],[243.0, 1.05, ',', 2],[204.0, 0.4, ',', 1],[198.0, 2, ',', 1],[190.0, 1.2, ',', 1],[158.0, 330, ',', 1],[152.0, 60, 'min', 1],[114.0, 340, ',', 1],[108.0, 60, 'min', 1],[85.0, 65.5, '%', 0],[70.0, 300, ',', 0],[64.0, 60, 'min', 0],[48.0, 10, '%', 0],[31.0, 330, ',', 0],[19.0, 14, '%', 0],[3.0, 300, ',', 0],[3.0, 90, 'min', 0]

Co60Fe20B20/MgO/Co60Fe20B20
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(4741, 4756)
 Here we present direct measurements of boththe magnitude and direction of the spin torque in Co60Fe20B20/MgO/Co60Fe20B20MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[203.0, 30, '%', 3]

At
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(4764, 4764)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(4770, 4770)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(4785, 4785)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(4860, 4860)
 Withincreasing bias, the in-plane component d<missing VAR>tauparallel/d<missing VAR>V remains large, instriking contrast to the decreasing magnetoresistance ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 30, '%', 1]

(V)
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(4924, 4926)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 30, '%', 0]

V2
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(4938, 4939)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 30, '%', 0]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(4946, 4946)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 30, '%', 0]

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(4993, 4993)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(4995, 4996)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(4998, 4998)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SB
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(5029, 5030)
 We present a computationally efficient transferable single-band tight-bindingmodel (SBT<missing VAR>B) for spin polarized transport in heterostructures with an effort tocapture the band structure effects.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(5032, 5032)
 We present a computationally efficient transferable single-band tight-bindingmodel (SBT<missing VAR>B) for spin polarized transport in heterostructures with an effort tocapture the band structure effects.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(5067, 5067)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(5089, 5089)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(5091, 5092)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SB
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(5188, 5189)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(5191, 5191)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(5248, 5249)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(5304, 5304)
 Features like I-V characteristics, voltage dependence and thebarrier width dependence of the tunnel magnetoresistance ratio are capturedquantitatively and the trends match well with the ones observed by ab initiomethods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(5306, 5306)
 Features like I-V characteristics, voltage dependence and thebarrier width dependence of the tunnel magnetoresistance ratio are capturedquantitatively and the trends match well with the ones observed by ab initiomethods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(5522, 5523)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 20, '%', 1]

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(5545, 5546)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 20, '%', 1]

MgO
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(5575, 5576)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 20, '%', 1]

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(5614, 5615)
 The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 20, '%', 0]

FeRh/MgO
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(5688, 5692)
 Both the polarityand magnitude of the phase transition tunneling anisotropic magnetoresistancecan be modulated by interfacial engineering at the alfa-FeRh/MgO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 20, '%', 1]

Al2O3
###Giant thermoelectric effect in Al2O3 magnetic tunnel junctions|Weiwei Lin,Michel Hehn,Laurent Chaput,Béatrice Negulescu,Stéphane Andrieu,François Montaigne,Stéphane Mangin###
(5755, 5758)
Giant thermoelectric effect in Al2O3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 1, 'mV', 4]

Al2O3
###Giant thermoelectric effect in Al2O3 magnetic tunnel junctions|Weiwei Lin,Michel Hehn,Laurent Chaput,Béatrice Negulescu,Stéphane Andrieu,François Montaigne,Stéphane Mangin###
(5858, 5861)
 Here we report on giant magnetothermoelectric effect in Al2O3magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1, 'mV', 1]

Cu
###Oxide spintronics|Manuel Bibes,Agnes Barthelemy###
(6134, 6134)
 While this was at first motivated by thediscovery of high-temperature superconductivity in perovskite Cu oxides, thistechnological breakthrough was soon applied to other transition metal oxides,and notably mixed-valence manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Oxide spintronics|Manuel Bibes,Agnes Barthelemy###
(6354, 6354)
 In this paper, we will review the most important results onoxide spintronics, emphasizing materials physics as well as spin-dependenttransport phenomena, and finally give some perspectives on how the flurry ofnew magnetic oxides could be useful for next-generation spintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(6461, 6461)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(6465, 6465)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(6475, 6478)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(6525, 6528)
 The half-metallic Heusler compound Co2MnSi is a very attractive materialfor spintronic devices because it exhibits very high tunnellingmagnetoresistance ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(6584, 6587)
 This work reports on a spectroscopic investigation ofthin Co2MnSi films as they are used as electrodes in magnetic tunneljunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(6646, 6646)
 The investigated films exhibit a remanent in-plane magnetisationwith a magnetic moment of about 5muB when saturated, as expected.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(6705, 6705)
 Magneticdichroism in emission and absorption was measured at the Co and Mn 2p<missing VAR> corelevels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(6709, 6709)
 Magneticdichroism in emission and absorption was measured at the Co and Mn 2p<missing VAR> corelevels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(6755, 6755)
 The photoelectron spectra were excited by circularly polarised hardX<missing VAR>-rays with an energy of of 6keV and taken from the remanently magnetisedfilm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(6848, 6848)
 An analysis reveals thelocalised character of the electrons and magnetic moments attributed to the Mnatoms, whereas the electrons related to the Co atoms contribute an itinerantpart to the total magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(6866, 6866)
 An analysis reveals thelocalised character of the electrons and magnetic moments attributed to the Mnatoms, whereas the electrons related to the Co atoms contribute an itinerantpart to the total magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(6912, 6916)
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(6942, 6942)
 Spin-transfer-torque magnetic random access memory (STT-MRAM) attractsextensive attentions due to its non-volatility, high density and low powerconsumption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(6992, 6992)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7003, 7008)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7062, 7062)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7091, 7093)
 It has beenexperimentally proven that a capping layer coating on CoFeB layer is essentialto obtain a strong PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7110, 7110)
 It has beenexperimentally proven that a capping layer coating on CoFeB layer is essentialto obtain a strong PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7136, 7136)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7155, 7155)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7162, 7166)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7198, 7198)
 The trend of PM<missing VAR>A variation with different capping materialsagrees well with experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7232, 7232)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7255, 7259)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7263, 7264)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7290, 7290)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7292, 7292)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7299, 7300)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7340, 7340)
 The variation of PM<missing VAR>A with differentcapping materials is attributed to the different hybridizations of both d<missing VAR> and p<missing VAR>orbitals via spin-orbital coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(7410, 7410)
 This work can significantly benefit theresearch and development of nanoscale STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7438, 7439)
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 3, ',', 5],[257.0, 300, 'K', 5],[260.0, 10, 'K', 5],[264.0, 87, '%', 5],[270.0, 165, '%', 5]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7443, 7446)
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 3, ',', 5],[250.0, 300, 'K', 5],[253.0, 10, 'K', 5],[257.0, 87, '%', 5],[263.0, 165, '%', 5]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7465, 7468)
 The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material forspin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, ',', 4],[228.0, 300, 'K', 4],[231.0, 10, 'K', 4],[235.0, 87, '%', 4],[241.0, 165, '%', 4]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7488, 7488)
 The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material forspin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 3, ',', 4],[208.0, 300, 'K', 4],[211.0, 10, 'K', 4],[215.0, 87, '%', 4],[221.0, 165, '%', 4]

MgO
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7545, 7546)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 3, ',', 2],[150.0, 300, 'K', 2],[153.0, 10, 'K', 2],[157.0, 87, '%', 2],[163.0, 165, '%', 2]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7565, 7568)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 3, ',', 2],[128.0, 300, 'K', 2],[131.0, 10, 'K', 2],[135.0, 87, '%', 2],[141.0, 165, '%', 2]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7578, 7578)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 3, ',', 2],[118.0, 300, 'K', 2],[121.0, 10, 'K', 2],[125.0, 87, '%', 2],[131.0, 165, '%', 2]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7606, 7609)
 X<missing VAR>-ray and electron diffractionmeasurements show that the (001) CoFeCrAl electrode films with atomically flatsurfaces have a B2-ordered phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3, ',', 1],[87.0, 300, 'K', 1],[90.0, 10, 'K', 1],[94.0, 87, '%', 1],[100.0, 165, '%', 1]

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7628, 7629)
 X<missing VAR>-ray and electron diffractionmeasurements show that the (001) CoFeCrAl electrode films with atomically flatsurfaces have a B2-ordered phase.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3, ',', 1],[67.0, 300, 'K', 1],[70.0, 10, 'K', 1],[74.0, 87, '%', 1],[80.0, 165, '%', 1]

MgO
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7739, 7740)
 Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 3, ',', 1],[43.0, 300, 'K', 1],[40.0, 10, 'K', 1],[36.0, 87, '%', 1],[30.0, 165, '%', 1]

C
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7813, 7813)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 3, ',', 3],[117.0, 300, 'K', 3],[114.0, 10, 'K', 3],[110.0, 87, '%', 3],[104.0, 165, '%', 3]

Co
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7832, 7832)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, ',', 3],[136.0, 300, 'K', 3],[133.0, 10, 'K', 3],[129.0, 87, '%', 3],[123.0, 165, '%', 3]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7836, 7836)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 3, ',', 3],[140.0, 300, 'K', 3],[137.0, 10, 'K', 3],[133.0, 87, '%', 3],[127.0, 165, '%', 3]

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7844, 7845)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 3, ',', 3],[148.0, 300, 'K', 3],[145.0, 10, 'K', 3],[141.0, 87, '%', 3],[135.0, 165, '%', 3]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7849, 7852)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 3, ',', 3],[153.0, 300, 'K', 3],[150.0, 10, 'K', 3],[146.0, 87, '%', 3],[140.0, 165, '%', 3]

Y
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7874, 7874)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3, ',', 3],[178.0, 300, 'K', 3],[175.0, 10, 'K', 3],[171.0, 87, '%', 3],[165.0, 165, '%', 3]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7883, 7883)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 3, ',', 3],[187.0, 300, 'K', 3],[184.0, 10, 'K', 3],[180.0, 87, '%', 3],[174.0, 165, '%', 3]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7885, 7885)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 3, ',', 3],[189.0, 300, 'K', 3],[186.0, 10, 'K', 3],[182.0, 87, '%', 3],[176.0, 165, '%', 3]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7905, 7905)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 3, ',', 4],[209.0, 300, 'K', 4],[206.0, 10, 'K', 4],[202.0, 87, '%', 4],[196.0, 165, '%', 4]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7907, 7907)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 3, ',', 4],[211.0, 300, 'K', 4],[208.0, 10, 'K', 4],[204.0, 87, '%', 4],[198.0, 165, '%', 4]

C
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7921, 7921)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 3, ',', 4],[225.0, 300, 'K', 4],[222.0, 10, 'K', 4],[218.0, 87, '%', 4],[212.0, 165, '%', 4]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7939, 7939)
 Finally, the effectof the Cr-Fe swap disorder on the ability for electronic states to allowcoherent electron tunneling is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 3, ',', 5],[243.0, 300, 'K', 5],[240.0, 10, 'K', 5],[236.0, 87, '%', 5],[230.0, 165, '%', 5]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(7941, 7941)
 Finally, the effectof the Cr-Fe swap disorder on the ability for electronic states to allowcoherent electron tunneling is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 3, ',', 5],[245.0, 300, 'K', 5],[242.0, 10, 'K', 5],[238.0, 87, '%', 5],[232.0, 165, '%', 5]

ZnO/MgO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(8017, 8021)
Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[84.0, 96, '%', 2],[203.0, 1.3, 'A', 3]

Fe/ZnO/MgO/Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(8032, 8040)
 We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[65.0, 96, '%', 1],[184.0, 1.3, 'A', 2]

ZnO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(8070, 8071)
 We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 96, '%', 1],[153.0, 1.3, 'A', 2]

Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(8171, 8171)
 We observe a high magnetoresistance ratio up to 96% at roomtemperature (RT) and find that these MTJs have asymmetric current-voltagecharacteristics, and their rectifying performances are largely dependent on themagnetization alignments of the Fe electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 96, '%', 0],[53.0, 1.3, 'A', 1]

W
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(8226, 8226)
 Diode responsibilities at azero-bias voltage (beta0), which is an important performance index forharvesting applications, are observed up to 1.3 A/W at RT in the antiparallelalignment of the magnetizations while maintaining rather low resistance-area(R<missing VAR>A) products (a few tens of k<missing VAR>Omegamum<missing VAR>2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 96, '%', 1],[2.0, 1.3, 'A', 0]

(Fe)
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(8302, 8304)
 Even with the same top andbottom electrodes (Fe), the obtained beta0 values are comparable to thoseof reported high-performance tunnel diodes consisting of amorphous bilayertunnel barriers with polycrystalline dissimilar electrodes.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 96, '%', 2],[78.0, 1.3, 'A', 1]

ZnO/MgO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(8372, 8376)
 This stronglysuggests that the epitaxial ZnO/MgO bilayer tunnel barrier is effective forenhancing the beta0 without significant increase in the R<missing VAR>A.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[267.0, 96, '%', 3],[148.0, 1.3, 'A', 2]

In
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(8412, 8412)
 In addition,we demonstrate that a zero-bias anomaly in thetunnel conductance, whichoriginates from the magnon excitations at the Fe/barrier interfaces, plays acrucial role in observed spin-dependent diode performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 96, '%', 4],[188.0, 1.3, 'A', 3]

Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(8456, 8456)
 In addition,we demonstrate that a zero-bias anomaly in thetunnel conductance, whichoriginates from the magnon excitations at the Fe/barrier interfaces, plays acrucial role in observed spin-dependent diode performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 96, '%', 4],[232.0, 1.3, 'A', 3]

In
###Control of sensitivity in vortex-type magnetic tunnel junction magnetometer sensors by the pinned layer geometry|Motoki Endo,Muftah Al-Mahdawi,Mikihiko Oogane,Yasuo Ando###
(8666, 8666)
 In this work, we develop sensor MTJs with NiFe sensing layershaving a vortex magnetic configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.85, 'to', 2]

NiFe
###Control of sensitivity in vortex-type magnetic tunnel junction magnetometer sensors by the pinned layer geometry|Motoki Endo,Muftah Al-Mahdawi,Mikihiko Oogane,Yasuo Ando###
(8685, 8686)
 In this work, we develop sensor MTJs with NiFe sensing layershaving a vortex magnetic configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.85, 'to', 2]

CrSBr
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(9104, 9106)
 Here, we demonstrate a new concept for programmable MTJoperation via strain control of the magnetic states of CrSBr, a layeredantiferromagnetic semiconductor used as the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrSBr
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(9133, 9135)
 Switching the CrSBrfrom antiferromagnetic to ferromagnetic order generates a giant tunnelingmagnetoresistance ratio without external magnetic field at temperatures up to 140 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(9181, 9181)
 Switching the CrSBrfrom antiferromagnetic to ferromagnetic order generates a giant tunnelingmagnetoresistance ratio without external magnetic field at temperatures up to 140 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(9419, 9419)
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 95, '%', 2],[220.0, 1.26, ',', 3],[526.0, 1000, '%', 9]

Cr
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(9421, 9421)
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 95, '%', 2],[218.0, 1.26, ',', 3],[524.0, 1000, '%', 9]

Fe2CrTe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(9496, 9499)
 Using electronic structure calculations based on density functional theory,we predict and study the structural, mechanical, electronic, magnetic andtransport properties of a new full Heusler chalcogenide, namely, Fe2CrTe,both in bulk and heterostructure form.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 95, '%', 1],[140.0, 1.26, ',', 2],[446.0, 1000, '%', 8]

H
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(9533, 9533)
 The system shows a ferromagnetic andhalf-metallic(HM) like behavior, with a very high (about 95%) spin polarizationat the Fermi level, in its cubic phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 95, '%', 0],[106.0, 1.26, ',', 1],[412.0, 1000, '%', 7]

H
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(9789, 9789)
 Due to the HM<missing VAR>-like behavior of the cubic phase andkeeping in mind the practical aspects, we probe the effect of strain as well assubstrate on various physical properties of this alloy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 95, '%', 5],[150.0, 1.26, ',', 4],[156.0, 1000, '%', 2]

Fe2CrTe/MgO/Fe2CrTe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(9865, 9876)
 Transmission profile ofthe Fe2CrTe/MgO/Fe2CrTe heterojunction has been calculated to probe it asa magnetic tunneling junction (MTJ) material in both the cubic and tetragonalphases.
EXCEPTION 4: Layered material, no automatic featurization possible!
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[312.0, 95, '%', 6],[226.0, 1.26, ',', 5],[69.0, 1000, '%', 1]

