In
###Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime|X. H. Wang,A. Brataas###
(151, 151)
 In theopposite limit, when the thermal energy is larger than the charging energy, themagnetoresistance ratio is only slightly enhanced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(245, 245)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 73, '%', 1],[77.0, 323, '%', 1],[157.0, 65, '%', 3],[166.0, 173, '%', 3],[176.0, 78, '%', 3]

Fe
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(247, 247)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 73, '%', 1],[75.0, 323, '%', 1],[155.0, 65, '%', 3],[164.0, 173, '%', 3],[174.0, 78, '%', 3]

B
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(249, 249)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 73, '%', 1],[73.0, 323, '%', 1],[153.0, 65, '%', 3],[162.0, 173, '%', 3],[172.0, 78, '%', 3]

Co
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(255, 255)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 73, '%', 1],[67.0, 323, '%', 1],[147.0, 65, '%', 3],[156.0, 173, '%', 3],[166.0, 78, '%', 3]

Fe
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(257, 257)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 73, '%', 1],[65.0, 323, '%', 1],[145.0, 65, '%', 3],[154.0, 173, '%', 3],[164.0, 78, '%', 3]

B
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(259, 259)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 73, '%', 1],[63.0, 323, '%', 1],[143.0, 65, '%', 3],[152.0, 173, '%', 3],[162.0, 78, '%', 3]

In
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(370, 370)
 In these systems, the tunnelmagnetoresistance ratios at optimum annealing temperatures were found to be 65%for alumina, 173% for magnesia, and 78% for the composite tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 73, '%', 2],[48.0, 323, '%', 2],[32.0, 65, '%', 0],[41.0, 173, '%', 0],[51.0, 78, '%', 0]

MgO/CoFeB
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(548, 553)
 Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are ofparticular interest for magnetic random-access memories because of theirexcellent thermal stability, scaling potential, and power dissipation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[153.0, 249, '%', 2],[178.0, 2, ',', 3],[312.0, 3.0, 'MA', 5],[325.0, 45, 'nm', 6]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(745, 745)
mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 249, '%', 1],[14.0, 2, ',', 0],[120.0, 3.0, 'MA', 2],[133.0, 45, 'nm', 3]

MgO/CoFeB
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(753, 758)
mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[47.0, 249, '%', 1],[22.0, 2, ',', 0],[107.0, 3.0, 'MA', 2],[120.0, 45, 'nm', 3]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(784, 784)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 249, '%', 2],[53.0, 2, ',', 1],[81.0, 3.0, 'MA', 1],[94.0, 45, 'nm', 2]

Ta
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(812, 812)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 249, '%', 2],[81.0, 2, ',', 1],[53.0, 3.0, 'MA', 1],[66.0, 45, 'nm', 2]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(829, 829)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 249, '%', 2],[98.0, 2, ',', 1],[36.0, 3.0, 'MA', 1],[49.0, 45, 'nm', 2]

B0
###High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects|Gengchiau Liang,S. Bala kumar,M. B. A. Jalil,S. G. Tan###
(1021, 1022)
 The current at B0T<missing VAR> is greatly decreased while the current atB>0T<missing VAR> is relatively large due to the band-to-band tunneling effects, resultingin a high magnetoresistance ratio, even at room-temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects|Gengchiau Liang,S. Bala kumar,M. B. A. Jalil,S. G. Tan###
(1040, 1040)
 The current at B0T<missing VAR> is greatly decreased while the current atB>0T<missing VAR> is relatively large due to the band-to-band tunneling effects, resultingin a high magnetoresistance ratio, even at room-temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NSN
###Spintronics with NSN Junction of one-dimensional quantum wires : A study of Pure Spin Current and Magnetoresistance|Sourin Das,Sumathi Rao,Arijit Saha###
(1350, 1352)
Spintronics with NSN Junction of one-dimensional quantum wires  A study of Pure Spin Current and Magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Nonequilibrium spin injection in monolayer black phosphorus|Mingyan Chen,Zhizhou Yu,Yin Wang,Yiqun Xie,Jian Wang,Hong Guo###
(1705, 1705)
 Monolayer black phosphorus (M<missing VAR>BP) is an interesting emerging electronicmaterial with a direct band gap and relatively high carrier mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nonequilibrium spin injection in monolayer black phosphorus|Mingyan Chen,Zhizhou Yu,Yin Wang,Yiqun Xie,Jian Wang,Hong Guo###
(1742, 1742)
 In thiswork we report a theoretical investigation of nonequilibrium spin injection andspin-polarized quantum transport in M<missing VAR>BP from ferromagnetic Ni contacts, intwo-dimensional magnetic tunneling structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BP
###Nonequilibrium spin injection in monolayer black phosphorus|Mingyan Chen,Zhizhou Yu,Yin Wang,Yiqun Xie,Jian Wang,Hong Guo###
(1781, 1782)
 In thiswork we report a theoretical investigation of nonequilibrium spin injection andspin-polarized quantum transport in M<missing VAR>BP from ferromagnetic Ni contacts, intwo-dimensional magnetic tunneling structures.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Nonequilibrium spin injection in monolayer black phosphorus|Mingyan Chen,Zhizhou Yu,Yin Wang,Yiqun Xie,Jian Wang,Hong Guo###
(1788, 1788)
 In thiswork we report a theoretical investigation of nonequilibrium spin injection andspin-polarized quantum transport in M<missing VAR>BP from ferromagnetic Ni contacts, intwo-dimensional magnetic tunneling structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BP
###Nonequilibrium spin injection in monolayer black phosphorus|Mingyan Chen,Zhizhou Yu,Yin Wang,Yiqun Xie,Jian Wang,Hong Guo###
(1888, 1889)
 We investigate physicalproperties such as the spin injection efficiency, the tunnel magnetoresistanceratio, spin-polarized currents, charge currents and transmission coefficientsas a function of external bias voltage, for two different device contactstructures where M<missing VAR>BP is contacted by Ni(111) and by Ni(100).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(2048, 2048)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(2052, 2052)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(2066, 2071)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(2092, 2092)
 We report on systematic ab-initio investigations of Co and Cr interlayersembedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on thechanges of the electronic structure and the transport properties withinterlayer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(2096, 2096)
 We report on systematic ab-initio investigations of Co and Cr interlayersembedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on thechanges of the electronic structure and the transport properties withinterlayer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(2239, 2239)
 The resistance area products and the tunnelmagnetoresistance ratios show a monotonous trend with distinct oscillations asa function of the Cr thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(2273, 2273)
 These modulations are directly addressed andinterpreted by means of magnetic structures in the Cr films and by complex bandstructure effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(2299, 2299)
 The characteristics for embedded Co interlayers areconsiderably influenced by interface resonances which are analyzed by the localelectronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSb2
###Anisotropic giant magnetoresistance in NbSb2|Kefeng Wang,D. Graf,Lijun Li,C. Petrovic###
(2350, 2352)
Anisotropic giant magnetoresistance in NbSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 5, '%', 1],[30.0, 2, 'K', 1],[33.0, 9, 'T', 1],[44.0, 6, '%', 1],[48.0, 0.4, 'K', 1],[52.0, 32, 'T', 1]

NbSb2
###Anisotropic giant magnetoresistance in NbSb2|Kefeng Wang,D. Graf,Lijun Li,C. Petrovic###
(2441, 2443)
 The extremely large transverse magnetoreistance (the magnetoresistant ratiosim 1.3times105% in 2 K and 9 T field, and 4.3times 106% in 0.4 Kand 32 T field, without saturation), and the metal-semiconductor crossoverinduced by magnetic field, are reported in NbSb2 single crystal withelectric current parallel to the b<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 5, '%', 0],[59.0, 2, 'K', 0],[56.0, 9, 'T', 0],[45.0, 6, '%', 0],[41.0, 0.4, 'K', 0],[37.0, 32, 'T', 0]

In
###Infinite magnetoresistance of magnetic multilayers|R. Seviour,S. Sanvito,C. J. Lambert,J. H. Jefferson###
(2684, 2684)
 In the limit that the phase-breaking and spin flipscattering lengths are greater than the system size, a multiple-scatteringapproach is used to calculate the 4-probe conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F1
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(2858, 2859)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(2861, 2861)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(2863, 2863)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(2865, 2865)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F2
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(2867, 2868)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono###
(3024, 3033)
Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 200, '%', 1],[64.0, 3, 'K', 1]

CoFeB/MgO/CoFeB
###Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono###
(3058, 3067)
 We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[26.0, 200, '%', 0],[30.0, 3, 'K', 0]

CoFeB
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3449, 3451)
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 79.6, ',', 2],[183.0, 0.3, ',', 2],[196.0, 1.05, ',', 3],[235.0, 0.4, ',', 4],[241.0, 2, ',', 4],[249.0, 1.2, ',', 4],[281.0, 330, ',', 4],[287.0, 60, 'min', 4],[325.0, 340, ',', 4],[331.0, 60, 'min', 4],[354.0, 65.5, '%', 5],[369.0, 300, ',', 5],[375.0, 60, 'min', 5],[391.0, 10, '%', 5],[408.0, 330, ',', 5],[420.0, 14, '%', 5],[436.0, 300, ',', 5],[442.0, 90, 'min', 5]

Ta
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3506, 3506)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 79.6, ',', 1],[128.0, 0.3, ',', 1],[141.0, 1.05, ',', 2],[180.0, 0.4, ',', 3],[186.0, 2, ',', 3],[194.0, 1.2, ',', 3],[226.0, 330, ',', 3],[232.0, 60, 'min', 3],[270.0, 340, ',', 3],[276.0, 60, 'min', 3],[299.0, 65.5, '%', 4],[314.0, 300, ',', 4],[320.0, 60, 'min', 4],[336.0, 10, '%', 4],[353.0, 330, ',', 4],[365.0, 14, '%', 4],[381.0, 300, ',', 4],[387.0, 90, 'min', 4]

Ta/Pd/IrMn/CoFe
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3567, 3575)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[49.0, 79.6, ',', 1],[59.0, 0.3, ',', 1],[72.0, 1.05, ',', 2],[111.0, 0.4, ',', 3],[117.0, 2, ',', 3],[125.0, 1.2, ',', 3],[157.0, 330, ',', 3],[163.0, 60, 'min', 3],[201.0, 340, ',', 3],[207.0, 60, 'min', 3],[230.0, 65.5, '%', 4],[245.0, 300, ',', 4],[251.0, 60, 'min', 4],[267.0, 10, '%', 4],[284.0, 330, ',', 4],[296.0, 14, '%', 4],[312.0, 300, ',', 4],[318.0, 90, 'min', 4]

Ta
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3577, 3577)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 79.6, ',', 1],[57.0, 0.3, ',', 1],[70.0, 1.05, ',', 2],[109.0, 0.4, ',', 3],[115.0, 2, ',', 3],[123.0, 1.2, ',', 3],[155.0, 330, ',', 3],[161.0, 60, 'min', 3],[199.0, 340, ',', 3],[205.0, 60, 'min', 3],[228.0, 65.5, '%', 4],[243.0, 300, ',', 4],[249.0, 60, 'min', 4],[265.0, 10, '%', 4],[282.0, 330, ',', 4],[294.0, 14, '%', 4],[310.0, 300, ',', 4],[316.0, 90, 'min', 4]

O
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3588, 3588)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 79.6, ',', 1],[46.0, 0.3, ',', 1],[59.0, 1.05, ',', 2],[98.0, 0.4, ',', 3],[104.0, 2, ',', 3],[112.0, 1.2, ',', 3],[144.0, 330, ',', 3],[150.0, 60, 'min', 3],[188.0, 340, ',', 3],[194.0, 60, 'min', 3],[217.0, 65.5, '%', 4],[232.0, 300, ',', 4],[238.0, 60, 'min', 4],[254.0, 10, '%', 4],[271.0, 330, ',', 4],[283.0, 14, '%', 4],[299.0, 300, ',', 4],[305.0, 90, 'min', 4]

B
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3596, 3596)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 79.6, ',', 1],[38.0, 0.3, ',', 1],[51.0, 1.05, ',', 2],[90.0, 0.4, ',', 3],[96.0, 2, ',', 3],[104.0, 1.2, ',', 3],[136.0, 330, ',', 3],[142.0, 60, 'min', 3],[180.0, 340, ',', 3],[186.0, 60, 'min', 3],[209.0, 65.5, '%', 4],[224.0, 300, ',', 4],[230.0, 60, 'min', 4],[246.0, 10, '%', 4],[263.0, 330, ',', 4],[275.0, 14, '%', 4],[291.0, 300, ',', 4],[297.0, 90, 'min', 4]

Ta/Pd
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3602, 3604)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 79.6, ',', 1],[30.0, 0.3, ',', 1],[43.0, 1.05, ',', 2],[82.0, 0.4, ',', 3],[88.0, 2, ',', 3],[96.0, 1.2, ',', 3],[128.0, 330, ',', 3],[134.0, 60, 'min', 3],[172.0, 340, ',', 3],[178.0, 60, 'min', 3],[201.0, 65.5, '%', 4],[216.0, 300, ',', 4],[222.0, 60, 'min', 4],[238.0, 10, '%', 4],[255.0, 330, ',', 4],[267.0, 14, '%', 4],[283.0, 300, ',', 4],[289.0, 90, 'min', 4]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3735, 3735)
 For stacks withx<missing VAR>0.4,nm, y<missing VAR>2,nm, and z<missing VAR>1.20,nm, the exchange bias presents asignificant decrease at post annealing temperatureT<missing VAR>textrmann330,circC for 60 min, while the interlayer exchangecoupling and the saturation magnetization per unit area sharply decay atT<missing VAR>textrmann340,circC for 60 min.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 79.6, ',', 2],[101.0, 0.3, ',', 2],[88.0, 1.05, ',', 1],[49.0, 0.4, ',', 0],[43.0, 2, ',', 0],[35.0, 1.2, ',', 0],[3.0, 330, ',', 0],[3.0, 60, 'min', 0],[41.0, 340, ',', 0],[47.0, 60, 'min', 0],[70.0, 65.5, '%', 1],[85.0, 300, ',', 1],[91.0, 60, 'min', 1],[107.0, 10, '%', 1],[124.0, 330, ',', 1],[136.0, 14, '%', 1],[152.0, 300, ',', 1],[158.0, 90, 'min', 1]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3779, 3779)
 For stacks withx<missing VAR>0.4,nm, y<missing VAR>2,nm, and z<missing VAR>1.20,nm, the exchange bias presents asignificant decrease at post annealing temperatureT<missing VAR>textrmann330,circC for 60 min, while the interlayer exchangecoupling and the saturation magnetization per unit area sharply decay atT<missing VAR>textrmann340,circC for 60 min.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 79.6, ',', 2],[145.0, 0.3, ',', 2],[132.0, 1.05, ',', 1],[93.0, 0.4, ',', 0],[87.0, 2, ',', 0],[79.0, 1.2, ',', 0],[47.0, 330, ',', 0],[41.0, 60, 'min', 0],[3.0, 340, ',', 0],[3.0, 60, 'min', 0],[26.0, 65.5, '%', 1],[41.0, 300, ',', 1],[47.0, 60, 'min', 1],[63.0, 10, '%', 1],[80.0, 330, ',', 1],[92.0, 14, '%', 1],[108.0, 300, ',', 1],[114.0, 90, 'min', 1]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3823, 3823)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 79.6, ',', 3],[189.0, 0.3, ',', 3],[176.0, 1.05, ',', 2],[137.0, 0.4, ',', 1],[131.0, 2, ',', 1],[123.0, 1.2, ',', 1],[91.0, 330, ',', 1],[85.0, 60, 'min', 1],[47.0, 340, ',', 1],[41.0, 60, 'min', 1],[18.0, 65.5, '%', 0],[3.0, 300, ',', 0],[3.0, 60, 'min', 0],[19.0, 10, '%', 0],[36.0, 330, ',', 0],[48.0, 14, '%', 0],[64.0, 300, ',', 0],[70.0, 90, 'min', 0]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3862, 3862)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 79.6, ',', 3],[228.0, 0.3, ',', 3],[215.0, 1.05, ',', 2],[176.0, 0.4, ',', 1],[170.0, 2, ',', 1],[162.0, 1.2, ',', 1],[130.0, 330, ',', 1],[124.0, 60, 'min', 1],[86.0, 340, ',', 1],[80.0, 60, 'min', 1],[57.0, 65.5, '%', 0],[42.0, 300, ',', 0],[36.0, 60, 'min', 0],[20.0, 10, '%', 0],[3.0, 330, ',', 0],[9.0, 14, '%', 0],[25.0, 300, ',', 0],[31.0, 90, 'min', 0]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(3890, 3890)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 79.6, ',', 3],[256.0, 0.3, ',', 3],[243.0, 1.05, ',', 2],[204.0, 0.4, ',', 1],[198.0, 2, ',', 1],[190.0, 1.2, ',', 1],[158.0, 330, ',', 1],[152.0, 60, 'min', 1],[114.0, 340, ',', 1],[108.0, 60, 'min', 1],[85.0, 65.5, '%', 0],[70.0, 300, ',', 0],[64.0, 60, 'min', 0],[48.0, 10, '%', 0],[31.0, 330, ',', 0],[19.0, 14, '%', 0],[3.0, 300, ',', 0],[3.0, 90, 'min', 0]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(3952, 3952)
Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors Spin drift effect in the inversion channel and spin relaxation in the n<missing VAR>-Si source/drain regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 99, ',', 4]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(3996, 3996)
Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors Spin drift effect in the inversion channel and spin relaxation in the n<missing VAR>-Si source/drain regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 99, ',', 4]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(4042, 4042)
 We have experimentally and theoretically investigated the electron spintransport and spin distribution at room temperature in a Si two-dimensional(2D) inversion channel of back-gate-type spin metal-oxide-semiconductorfield-effect transistors (spin M<missing VAR>OSFE<missing VAR>Ts).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 99, ',', 3]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(4085, 4087)
 We have experimentally and theoretically investigated the electron spintransport and spin distribution at room temperature in a Si two-dimensional(2D) inversion channel of back-gate-type spin metal-oxide-semiconductorfield-effect transistors (spin M<missing VAR>OSFE<missing VAR>Ts).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 99, ',', 3]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(4107, 4109)
 The magnetoresistance ratio of thespin M<missing VAR>OSFET with a channel length of 0.4mum<missing VAR> was increased by a factor of 6from that in our previous paper [Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 99, ',', 2]

B
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(4161, 4161)
 B 99, 165301 (2019)] by loweringthe parasitic resistances at the source/drain junctions withhighly-phosphorus-doped n<missing VAR>-Si regions and by increasing the lateral electricfield in the channel along the electron transport, called spin drift.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 99, ',', 0]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(4205, 4205)
 B 99, 165301 (2019)] by loweringthe parasitic resistances at the source/drain junctions withhighly-phosphorus-doped n<missing VAR>-Si regions and by increasing the lateral electricfield in the channel along the electron transport, called spin drift.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 99, ',', 0]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(4272, 4274)
 ClearHanle signals with some oscillation peaks were observed for the spin M<missing VAR>OSFETwith a channel length of 10 mu m<missing VAR> under the lateral electric field,indicating that the effective spin diffusion length is dramatically enhanced bythe spin drift.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 99, ',', 1]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(4349, 4349)
 By taking into account the n<missing VAR>-Si regions and the spin drift inthe channel, one-dimensional analytic functions were derived for analyzing theeffect of the spin drift on the spin transport through the channel and thesefunctions were found to explain almost all the experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 99, ',', 2]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(4541, 4541)
 From thecalculated spin current and spin distribution, it was revealed that almost allthe spins are unflipped during the spin-drift-assisted transport through the0.4-mum<missing VAR>-long inversion channel, but the most part of the injected spins fromthe source electrode are relaxed in the n<missing VAR>-Si regions of both the source anddrain junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 99, ',', 3]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(4668, 4670)
Furthermore, we showed that the effective spin resistances that are introducedin this study are very helpful to understand how to improve themagnetoresistance ratio of spin M<missing VAR>OSFE<missing VAR>Ts for practical use.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[505.0, 99, ',', 5]

Ni
###Magnetoresistance through spin polarized p-states|Nikos Papanikolaou###
(4722, 4722)
 We present a theoretical study of the ballistic magnetoresistance in Nicontacts using first-principles, atomistic electronic-structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance through spin polarized p-states|Nikos Papanikolaou###
(4744, 4744)
In particular we investigate the role of defects in the contact region in orderto explain the recently observed spectacular magnetoresistance ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(4919, 4920)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 4, 'K', 2],[185.0, 270, 'K', 4]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(4923, 4924)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4, 'K', 2],[181.0, 270, 'K', 4]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(4927, 4929)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 4, 'K', 2],[176.0, 270, 'K', 4]

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(4950, 4951)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 4, 'K', 1],[154.0, 270, 'K', 3]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(4954, 4955)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4, 'K', 1],[150.0, 270, 'K', 3]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(4958, 4960)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 4, 'K', 1],[145.0, 270, 'K', 3]

SrTiO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(4964, 4967)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 4, 'K', 1],[138.0, 270, 'K', 3]

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(4972, 4973)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4, 'K', 1],[132.0, 270, 'K', 3]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(4976, 4977)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 4, 'K', 1],[128.0, 270, 'K', 3]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(4980, 4982)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 4, 'K', 1],[123.0, 270, 'K', 3]

La
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(5173, 5173)
Structure, Magnetic Properties and Spin-glass Behavior in Lasub0.9Tesub0.1MnOsub3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 51, '%', 3],[128.0, 200, 'K', 3],[137.0, 4, 'T', 3]

Mn
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(5178, 5178)
Structure, Magnetic Properties and Spin-glass Behavior in Lasub0.9Tesub0.1MnOsub3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 51, '%', 3],[123.0, 200, 'K', 3],[132.0, 4, 'T', 3]

In
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(5183, 5183)
 In this study we report the structure, magnetic and electrical transportproperties of pervoskite oxide Lasub0.9Tesub0.1MnOsub3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 51, '%', 2],[118.0, 200, 'K', 2],[127.0, 4, 'T', 2]

La
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(5215, 5215)
 In this study we report the structure, magnetic and electrical transportproperties of pervoskite oxide Lasub0.9Tesub0.1MnOsub3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 51, '%', 2],[86.0, 200, 'K', 2],[95.0, 4, 'T', 2]

Mn
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(5220, 5220)
 In this study we report the structure, magnetic and electrical transportproperties of pervoskite oxide Lasub0.9Tesub0.1MnOsub3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 51, '%', 2],[81.0, 200, 'K', 2],[90.0, 4, 'T', 2]

PS
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(5316, 5317)
 The X<missing VAR>PSmeasurement suggests that Te ions are in the Teup4 state, while Mn ionsmay be in the 2 and 3 valence state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 51, '%', 1],[15.0, 200, 'K', 1],[6.0, 4, 'T', 1]

Te
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(5326, 5326)
 The X<missing VAR>PSmeasurement suggests that Te ions are in the Teup4 state, while Mn ionsmay be in the 2 and 3 valence state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 51, '%', 1],[25.0, 200, 'K', 1],[16.0, 4, 'T', 1]

Te
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(5336, 5336)
 The X<missing VAR>PSmeasurement suggests that Te ions are in the Teup4 state, while Mn ionsmay be in the 2 and 3 valence state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 51, '%', 1],[35.0, 200, 'K', 1],[26.0, 4, 'T', 1]

Mn
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(5345, 5345)
 The X<missing VAR>PSmeasurement suggests that Te ions are in the Teup4 state, while Mn ionsmay be in the 2 and 3 valence state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 51, '%', 1],[44.0, 200, 'K', 1],[35.0, 4, 'T', 1]

CuCrZrS4
###Large negative magnetoresistance in thiospinel CuCrZrS4|Takao Furubayashi,Hiroyuki Suzuki,Nami Kobayashi,Shoichi Nagata###
(5387, 5391)
Large negative magnetoresistance in thiospinel CuCrZrS4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 100, 'K', 4],[188.0, 80, 'at', 4],[189.0, 16, 'K', 4]

CuCrZrS4
###Large negative magnetoresistance in thiospinel CuCrZrS4|Takao Furubayashi,Hiroyuki Suzuki,Nami Kobayashi,Shoichi Nagata###
(5417, 5421)
 We report on large negative magnetoresistance observed in ferromagneticthiospinel compound CuCrZrS4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 100, 'K', 3],[158.0, 80, 'at', 3],[159.0, 16, 'K', 3]

H
###Large negative magnetoresistance in thiospinel CuCrZrS4|Takao Furubayashi,Hiroyuki Suzuki,Nami Kobayashi,Shoichi Nagata###
(5546, 5546)
 Magnetoresistance ratio rho (T<missing VAR>,0)/rho(T<missing VAR>,H) is1.5 at 100 K for H90 k<missing VAR>Oe and increases divergently with decreasing temperaturereaching 80 at 16 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 100, 'K', 0],[33.0, 80, 'at', 0],[34.0, 16, 'K', 0]

H90
###Large negative magnetoresistance in thiospinel CuCrZrS4|Takao Furubayashi,Hiroyuki Suzuki,Nami Kobayashi,Shoichi Nagata###
(5559, 5560)
 Magnetoresistance ratio rho (T<missing VAR>,0)/rho(T<missing VAR>,H) is1.5 at 100 K for H90 k<missing VAR>Oe and increases divergently with decreasing temperaturereaching 80 at 16 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 100, 'K', 0],[19.0, 80, 'at', 0],[20.0, 16, 'K', 0]

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5644, 5644)
First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5650, 5651)
First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5684, 5684)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5690, 5690)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5717, 5718)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5734, 5734)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5741, 5741)
 For bcc-Co, Tc1420 K is predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc1420
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5744, 5745)
 For bcc-Co, Tc1420 K is predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5747, 5747)
 For bcc-Co, Tc1420 K is predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5773, 5773)
 This would be the highest Curietemperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunneljunctions offer high magnetoresistance ratios even at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/MgO
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5784, 5787)
 This would be the highest Curietemperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunneljunctions offer high magnetoresistance ratios even at room temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(5791, 5791)
 This would be the highest Curietemperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunneljunctions offer high magnetoresistance ratios even at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers|Patryk Krzysteczko,Xinli Kou,Karsten Rott,Andy Thomas,Günter Reiss###
(5893, 5894)
Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4.4, 'ohm', 2]

MgO
###Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers|Patryk Krzysteczko,Xinli Kou,Karsten Rott,Andy Thomas,Günter Reiss###
(5917, 5918)
 Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriersare prepared to examine their stability under large current stress.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 4.4, 'ohm', 1]

CPP
###High-output CPP-GMR sensor with synthetic-ferrimagnet free layer and enhanced spin-torque critical currents|M. J. Carey,Neil Smith,S. Maat,J. R. Childress###
(6147, 6149)
High-output CPP-GMR sensor with synthetic-ferrimagnet free layer and enhanced spin-torque critical currents.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 4.5, 'nm', 3],[248.0, 2, 'e', 3]

CPP
###High-output CPP-GMR sensor with synthetic-ferrimagnet free layer and enhanced spin-torque critical currents|M. J. Carey,Neil Smith,S. Maat,J. R. Childress###
(6200, 6202)
 It is shown that the maximum stable output of a CPP-GMR sensor is increasedsignificantly by using a synthetic ferrimagnet free layer, provided theelectron current flows from free layer to reference layer.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 4.5, 'nm', 2],[195.0, 2, 'e', 2]

In
###High-output CPP-GMR sensor with synthetic-ferrimagnet free layer and enhanced spin-torque critical currents|M. J. Carey,Neil Smith,S. Maat,J. R. Childress###
(6341, 6341)
 In readheads with net free layer moments equivalent to only 4.5nm of Ni80Fe20, thiseffect is shown to result in sustainable sense current densities above 2e8A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 4.5, 'nm', 0],[56.0, 2, 'e', 0]

Ni80Fe20
###High-output CPP-GMR sensor with synthetic-ferrimagnet free layer and enhanced spin-torque critical currents|M. J. Carey,Neil Smith,S. Maat,J. R. Childress###
(6367, 6370)
 In readheads with net free layer moments equivalent to only 4.5nm of Ni80Fe20, thiseffect is shown to result in sustainable sense current densities above 2e8A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4.5, 'nm', 0],[27.0, 2, 'e', 0]

N
###Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride|Oleg V. Yazyev,Alfredo Pasquarello###
(6689, 6689)
 We propose monolayer epitaxial graphene and hexagonal boron nitride (h<missing VAR>-BN) asultimate thickness covalent spacers for magnetoresistive junctions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 100, '%', 2]

MgO
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(6882, 6883)
Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(6921, 6921)
 We prepared magnetic tunnel junctions with one ferromagnetic and onesuperconducting Al-Si electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(6923, 6923)
 We prepared magnetic tunnel junctions with one ferromagnetic and onesuperconducting Al-Si electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(6943, 6943)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(6945, 6945)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(6947, 6947)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(6959, 6962)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(7071, 7071)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(7073, 7073)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(7075, 7075)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(7078, 7079)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(7082, 7082)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(7084, 7084)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(7086, 7086)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(7422, 7427)
 We report an extensive first-principles investigation of impurity-induceddevice-to-device variability of spin-polarized quantum tunneling throughFe/MgO/Fe magnetic tunnel junctions (MTJ).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(7442, 7442)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(7494, 7494)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(7507, 7512)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(7529, 7529)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(7533, 7534)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(7551, 7556)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(7590, 7590)
 Our first-principles calculations of the fluctuations ofthe on/off currents and STT provide vital information for future predictions ofthe long-term reliability of spintronic devices, which is imperative forhigh-volume production.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Effect of Image Potential on Spin Polarized Transport through Magnetic Tunnel Junctions|Tehseen Zahra Raza,Hassan Raza###
(8154, 8159)
 We study the effect of image potential on spin polarized transport throughFe/MgO/Fe magnetic tunnel junctions in the presence of symmetry filtering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(8408, 8408)
 We derive a simple relational expression between the spin polarization ratioof resistivity, Prho, and the anisotropic magnetoresistance ratio Deltarho/rho, and that between the spin polarization ratio of the density ofstates at the Fermi energy, Prm D<missing VAR>OS, and Delta rho/rho for nearlyhalf-metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0, 'to', 1]

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(8464, 8464)
 We derive a simple relational expression between the spin polarization ratioof resistivity, Prho, and the anisotropic magnetoresistance ratio Deltarho/rho, and that between the spin polarization ratio of the density ofstates at the Fermi energy, Prm D<missing VAR>OS, and Delta rho/rho for nearlyhalf-metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0, 'to', 1]

OS
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(8468, 8469)
 We derive a simple relational expression between the spin polarization ratioof resistivity, Prho, and the anisotropic magnetoresistance ratio Deltarho/rho, and that between the spin polarization ratio of the density ofstates at the Fermi energy, Prm D<missing VAR>OS, and Delta rho/rho for nearlyhalf-metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0, 'to', 1]

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(8498, 8498)
 We find that Prho and Prm D<missing VAR>OS increasewith increasing Delta rho/rho from 0 to a maximum value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0, 'to', 0]

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(8503, 8503)
 We find that Prho and Prm D<missing VAR>OS increasewith increasing Delta rho/rho from 0 to a maximum value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0, 'to', 0]

OS
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(8507, 8508)
 We find that Prho and Prm D<missing VAR>OS increasewith increasing Delta rho/rho from 0 to a maximum value.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0, 'to', 0]

In
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(8533, 8533)
 In addition, weroughly estimate Prho and Prm D<missing VAR>OS for a Co2FeGa0.5Ge0.5Heusler alloy by substituting its experimentally observed Delta rho/rhointo the respective expressions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0, 'to', 1]

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(8545, 8545)
 In addition, weroughly estimate Prho and Prm D<missing VAR>OS for a Co2FeGa0.5Ge0.5Heusler alloy by substituting its experimentally observed Delta rho/rhointo the respective expressions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0, 'to', 1]

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(8550, 8550)
 In addition, weroughly estimate Prho and Prm D<missing VAR>OS for a Co2FeGa0.5Ge0.5Heusler alloy by substituting its experimentally observed Delta rho/rhointo the respective expressions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0, 'to', 1]

OS
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(8554, 8555)
 In addition, weroughly estimate Prho and Prm D<missing VAR>OS for a Co2FeGa0.5Ge0.5Heusler alloy by substituting its experimentally observed Delta rho/rhointo the respective expressions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0, 'to', 1]

Co2FeGa0.5Ge0.5
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(8561, 8567)
 In addition, weroughly estimate Prho and Prm D<missing VAR>OS for a Co2FeGa0.5Ge0.5Heusler alloy by substituting its experimentally observed Delta rho/rhointo the respective expressions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0.125,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 0, 'to', 1]

In
###Gigantic tunneling magnetoresistance in magnetic Weyl semimetal tunnel junctions|D. J. P. de Sousa,C. O. Ascencio,P. M. Haney,J. P. Wang,Tony Low###
(8808, 8808)
 In addition, we show that theFermi arc states give rise to a non-monotonic dependence of conductance on themisalignment angle between the magnetizations of the two contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(9721, 9721)
Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 100, '%', 3]

Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(9725, 9725)
Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 100, '%', 3]

Fe/GaAs/Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(9757, 9762)
 We present it ab initio calculations of the spin-dependent electronictransport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situationof a spin-injection experiment.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[179.0, 100, '%', 2]

Fe/ZnSe/Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(9766, 9771)
 We present it ab initio calculations of the spin-dependent electronictransport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situationof a spin-injection experiment.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[170.0, 100, '%', 2]

B
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(9807, 9807)
 We follow a ballistic Landauer-Buttikerapproach for the calculation of the spin-dependent dc conductance in thelinear-responce regime, in the limit of zero temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 100, '%', 1]

In
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(9957, 9957)
 In particular we study the significance of thetransmission resonances caused by the presence of two interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 100, '%', 1]

La
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10024, 10024)
Structure, electric and magnetic properties of the electron-doped manganese oxide Lasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.1, ',', 0],[67.0, 0.1, ',', 1],[291.0, 240, 'K', 6],[294.0, 255, 'K', 6],[299.0, 0.1, ',', 6],[302.0, 0.15, ',', 6],[340.0, 51, '%', 7],[344.0, 200, 'K', 7],[360.0, 40, 'kOe', 7]

Te
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10031, 10031)
Structure, electric and magnetic properties of the electron-doped manganese oxide Lasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.1, ',', 0],[60.0, 0.1, ',', 1],[284.0, 240, 'K', 6],[287.0, 255, 'K', 6],[292.0, 0.1, ',', 6],[295.0, 0.15, ',', 6],[333.0, 51, '%', 7],[337.0, 200, 'K', 7],[353.0, 40, 'kOe', 7]

MnO
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10036, 10037)
Structure, electric and magnetic properties of the electron-doped manganese oxide Lasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.1, ',', 0],[54.0, 0.1, ',', 1],[278.0, 240, 'K', 6],[281.0, 255, 'K', 6],[286.0, 0.1, ',', 6],[289.0, 0.15, ',', 6],[327.0, 51, '%', 7],[331.0, 200, 'K', 7],[347.0, 40, 'kOe', 7]

In
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10051, 10051)
 In this letter, the electrical and magnetic properties ofLasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15), which is a new material andshows good colossal magnetoresistance (CMR) behavior, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.1, ',', 1],[40.0, 0.1, ',', 0],[264.0, 240, 'K', 5],[267.0, 255, 'K', 5],[272.0, 0.1, ',', 5],[275.0, 0.15, ',', 5],[313.0, 51, '%', 6],[317.0, 200, 'K', 6],[333.0, 40, 'kOe', 6]

La
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10071, 10071)
 In this letter, the electrical and magnetic properties ofLasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15), which is a new material andshows good colossal magnetoresistance (CMR) behavior, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.1, ',', 1],[20.0, 0.1, ',', 0],[244.0, 240, 'K', 5],[247.0, 255, 'K', 5],[252.0, 0.1, ',', 5],[255.0, 0.15, ',', 5],[293.0, 51, '%', 6],[297.0, 200, 'K', 6],[313.0, 40, 'kOe', 6]

Te
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10078, 10078)
 In this letter, the electrical and magnetic properties ofLasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15), which is a new material andshows good colossal magnetoresistance (CMR) behavior, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.1, ',', 1],[13.0, 0.1, ',', 0],[237.0, 240, 'K', 5],[240.0, 255, 'K', 5],[245.0, 0.1, ',', 5],[248.0, 0.15, ',', 5],[286.0, 51, '%', 6],[290.0, 200, 'K', 6],[306.0, 40, 'kOe', 6]

MnO
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10083, 10084)
 In this letter, the electrical and magnetic properties ofLasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15), which is a new material andshows good colossal magnetoresistance (CMR) behavior, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 0.1, ',', 1],[7.0, 0.1, ',', 0],[231.0, 240, 'K', 5],[234.0, 255, 'K', 5],[239.0, 0.1, ',', 5],[242.0, 0.15, ',', 5],[280.0, 51, '%', 6],[284.0, 200, 'K', 6],[300.0, 40, 'kOe', 6]

C
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10120, 10120)
 In this letter, the electrical and magnetic properties ofLasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15), which is a new material andshows good colossal magnetoresistance (CMR) behavior, have been investigated.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.1, ',', 1],[29.0, 0.1, ',', 0],[195.0, 240, 'K', 5],[198.0, 255, 'K', 5],[203.0, 0.1, ',', 5],[206.0, 0.15, ',', 5],[244.0, 51, '%', 6],[248.0, 200, 'K', 6],[264.0, 40, 'kOe', 6]

In
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10147, 10147)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.1, ',', 3],[56.0, 0.1, ',', 2],[168.0, 240, 'K', 3],[171.0, 255, 'K', 3],[176.0, 0.1, ',', 3],[179.0, 0.15, ',', 3],[217.0, 51, '%', 4],[221.0, 200, 'K', 4],[237.0, 40, 'kOe', 4]

Te
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10154, 10154)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 0.1, ',', 3],[63.0, 0.1, ',', 2],[161.0, 240, 'K', 3],[164.0, 255, 'K', 3],[169.0, 0.1, ',', 3],[172.0, 0.15, ',', 3],[210.0, 51, '%', 4],[214.0, 200, 'K', 4],[230.0, 40, 'kOe', 4]

La
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10165, 10165)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0.1, ',', 3],[74.0, 0.1, ',', 2],[150.0, 240, 'K', 3],[153.0, 255, 'K', 3],[158.0, 0.1, ',', 3],[161.0, 0.15, ',', 3],[199.0, 51, '%', 4],[203.0, 200, 'K', 4],[219.0, 40, 'kOe', 4]

Mn
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10184, 10184)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0.1, ',', 3],[93.0, 0.1, ',', 2],[131.0, 240, 'K', 3],[134.0, 255, 'K', 3],[139.0, 0.1, ',', 3],[142.0, 0.15, ',', 3],[180.0, 51, '%', 4],[184.0, 200, 'K', 4],[200.0, 40, 'kOe', 4]

O
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10186, 10186)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.1, ',', 3],[95.0, 0.1, ',', 2],[129.0, 240, 'K', 3],[132.0, 255, 'K', 3],[137.0, 0.1, ',', 3],[140.0, 0.15, ',', 3],[178.0, 51, '%', 4],[182.0, 200, 'K', 4],[198.0, 40, 'kOe', 4]

Mn
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10188, 10188)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0.1, ',', 3],[97.0, 0.1, ',', 2],[127.0, 240, 'K', 3],[130.0, 255, 'K', 3],[135.0, 0.1, ',', 3],[138.0, 0.15, ',', 3],[176.0, 51, '%', 4],[180.0, 200, 'K', 4],[196.0, 40, 'kOe', 4]

S
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10209, 10209)
 X<missing VAR>-ray photoemission spectroscopy (X<missing VAR>PS) measurement revealedthat the Te ions were in the tetravalent state and the manganese ions could beconsidered as in a mixture state of Mnsup(2) and MnSup(3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 0.1, ',', 4],[118.0, 0.1, ',', 3],[106.0, 240, 'K', 2],[109.0, 255, 'K', 2],[114.0, 0.1, ',', 2],[117.0, 0.15, ',', 2],[155.0, 51, '%', 3],[159.0, 200, 'K', 3],[175.0, 40, 'kOe', 3]

Te
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10221, 10221)
 X<missing VAR>-ray photoemission spectroscopy (X<missing VAR>PS) measurement revealedthat the Te ions were in the tetravalent state and the manganese ions could beconsidered as in a mixture state of Mnsup(2) and MnSup(3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 0.1, ',', 4],[130.0, 0.1, ',', 3],[94.0, 240, 'K', 2],[97.0, 255, 'K', 2],[102.0, 0.1, ',', 2],[105.0, 0.15, ',', 2],[143.0, 51, '%', 3],[147.0, 200, 'K', 3],[163.0, 40, 'kOe', 3]

Mn
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10262, 10262)
 X<missing VAR>-ray photoemission spectroscopy (X<missing VAR>PS) measurement revealedthat the Te ions were in the tetravalent state and the manganese ions could beconsidered as in a mixture state of Mnsup(2) and MnSup(3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 0.1, ',', 4],[171.0, 0.1, ',', 3],[53.0, 240, 'K', 2],[56.0, 255, 'K', 2],[61.0, 0.1, ',', 2],[64.0, 0.15, ',', 2],[102.0, 51, '%', 3],[106.0, 200, 'K', 3],[122.0, 40, 'kOe', 3]

Mn
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10270, 10270)
 X<missing VAR>-ray photoemission spectroscopy (X<missing VAR>PS) measurement revealedthat the Te ions were in the tetravalent state and the manganese ions could beconsidered as in a mixture state of Mnsup(2) and MnSup(3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 0.1, ',', 4],[179.0, 0.1, ',', 3],[45.0, 240, 'K', 2],[48.0, 255, 'K', 2],[53.0, 0.1, ',', 2],[56.0, 0.15, ',', 2],[94.0, 51, '%', 3],[98.0, 200, 'K', 3],[114.0, 40, 'kOe', 3]

(Tc)
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10308, 10310)
 The Curie temperature(Tc) was about 240 K and 255 K for x<missing VAR>0.1, 0.15, respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 0.1, ',', 6],[217.0, 0.1, ',', 5],[5.0, 240, 'K', 0],[8.0, 255, 'K', 0],[13.0, 0.1, ',', 0],[16.0, 0.15, ',', 0],[54.0, 51, '%', 1],[58.0, 200, 'K', 1],[74.0, 40, 'kOe', 1]

(H)
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(10350, 10352)
 The maximummagnetoresistance ratio MR[r<missing VAR>(0)-r<missing VAR>(H)]/r<missing VAR>(0) was about 51% at 200 K and in theapplied magnetic field of 40 kOe.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 0.1, ',', 7],[259.0, 0.1, ',', 6],[35.0, 240, 'K', 1],[32.0, 255, 'K', 1],[27.0, 0.1, ',', 1],[24.0, 0.15, ',', 1],[12.0, 51, '%', 0],[16.0, 200, 'K', 0],[32.0, 40, 'kOe', 0]

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(10812, 10812)
 Quantum-well (Q<missing VAR>W) states in it nonmagnetic metal layers contained inmagnetic multilayers are known to be important in spin-dependent transport, butthe role of Q<missing VAR>W states in it magnetic layers remains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(10865, 10865)
 Quantum-well (Q<missing VAR>W) states in it nonmagnetic metal layers contained inmagnetic multilayers are known to be important in spin-dependent transport, butthe role of Q<missing VAR>W states in it magnetic layers remains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(10906, 10906)
 Here weidentify the conditions and mechanisms for resonant tunneling through Q<missing VAR>W statesin magnetic layers and determine candidate structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/FeO/Fe/Cr
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(10950, 10960)
 We reportfirst-principles calculations of spin-dependent transport in epitaxialFe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/MgO/Fe/Cr
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(10964, 10971)
 We reportfirst-principles calculations of spin-dependent transport in epitaxialFe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(10992, 10992)
 We demonstrate theformation of sharp Q<missing VAR>W states in the Fe layer and show discrete conductancejumps as the Q<missing VAR>W states enter the transport window with increasing bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(11000, 11000)
 We demonstrate theformation of sharp Q<missing VAR>W states in the Fe layer and show discrete conductancejumps as the Q<missing VAR>W states enter the transport window with increasing bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(11020, 11020)
 We demonstrate theformation of sharp Q<missing VAR>W states in the Fe layer and show discrete conductancejumps as the Q<missing VAR>W states enter the transport window with increasing bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(11039, 11039)
 Atresonance, the current increases by one to two orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.4Ca1.6Mn2O7
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11181, 11188)
Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11666666666666665,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 107, 'K', 2],[158.0, 225, 'K', 3],[185.0, 55, 'K', 4],[264.0, 30, 'K', 7],[308.0, 77, 'K', 8],[319.0, 5, '%', 8],[323.0, 0.6, 'kOe', 8],[329.0, 13, '%', 8],[333.0, 3, 'kOe', 8]

La1.4Ca1.6Mn2O7
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11217, 11224)
 Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11666666666666665,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 107, 'K', 1],[122.0, 225, 'K', 2],[149.0, 55, 'K', 3],[228.0, 30, 'K', 6],[272.0, 77, 'K', 7],[283.0, 5, '%', 7],[287.0, 0.6, 'kOe', 7],[293.0, 13, '%', 7],[297.0, 3, 'kOe', 7]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11230, 11230)
 Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 107, 'K', 1],[116.0, 225, 'K', 2],[143.0, 55, 'K', 3],[222.0, 30, 'K', 6],[266.0, 77, 'K', 7],[277.0, 5, '%', 7],[281.0, 0.6, 'kOe', 7],[287.0, 13, '%', 7],[291.0, 3, 'kOe', 7]

O
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11232, 11232)
 Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 107, 'K', 1],[114.0, 225, 'K', 2],[141.0, 55, 'K', 3],[220.0, 30, 'K', 6],[264.0, 77, 'K', 7],[275.0, 5, '%', 7],[279.0, 0.6, 'kOe', 7],[285.0, 13, '%', 7],[289.0, 3, 'kOe', 7]

LaAlO3
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11256, 11259)
 Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 107, 'K', 1],[87.0, 225, 'K', 2],[114.0, 55, 'K', 3],[193.0, 30, 'K', 6],[237.0, 77, 'K', 7],[248.0, 5, '%', 7],[252.0, 0.6, 'kOe', 7],[258.0, 13, '%', 7],[262.0, 3, 'kOe', 7]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11300, 11300)
 These single phase films having grain size in the range70-100 nm exhibit ferromagnetic transition at T<missing VAR>C  107K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 107, 'K', 0],[46.0, 225, 'K', 1],[73.0, 55, 'K', 2],[152.0, 30, 'K', 5],[196.0, 77, 'K', 6],[207.0, 5, '%', 6],[211.0, 0.6, 'kOe', 6],[217.0, 13, '%', 6],[221.0, 3, 'kOe', 6]

P
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11371, 11371)
 Insulator/semiconductor to metal transitionoccurs at a lower temperature T<missing VAR>P  55K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 107, 'K', 2],[25.0, 225, 'K', 1],[2.0, 55, 'K', 0],[81.0, 30, 'K', 3],[125.0, 77, 'K', 4],[136.0, 5, '%', 4],[140.0, 0.6, 'kOe', 4],[146.0, 13, '%', 4],[150.0, 3, 'kOe', 4]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11385, 11385)
 The transport mechanism above T<missing VAR>C isof Motts<missing VAR> variable range hopping type.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 107, 'K', 3],[39.0, 225, 'K', 2],[12.0, 55, 'K', 1],[67.0, 30, 'K', 2],[111.0, 77, 'K', 3],[122.0, 5, '%', 3],[126.0, 0.6, 'kOe', 3],[132.0, 13, '%', 3],[136.0, 3, 'kOe', 3]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11407, 11407)
 Below T<missing VAR>C the current-voltagecharacteristics show non-linear behaviour that becomes stronger with decreasingtemperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 107, 'K', 4],[61.0, 225, 'K', 3],[34.0, 55, 'K', 2],[45.0, 30, 'K', 1],[89.0, 77, 'K', 2],[100.0, 5, '%', 2],[104.0, 0.6, 'kOe', 2],[110.0, 13, '%', 2],[114.0, 3, 'kOe', 2]

At
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11440, 11440)
 At low temperatures below T<missing VAR>CA  30K a magnetically frustratedspin canted state is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 107, 'K', 5],[94.0, 225, 'K', 4],[67.0, 55, 'K', 3],[12.0, 30, 'K', 0],[56.0, 77, 'K', 1],[67.0, 5, '%', 1],[71.0, 0.6, 'kOe', 1],[77.0, 13, '%', 1],[81.0, 3, 'kOe', 1]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11449, 11449)
 At low temperatures below T<missing VAR>CA  30K a magnetically frustratedspin canted state is observed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 107, 'K', 5],[103.0, 225, 'K', 4],[76.0, 55, 'K', 3],[3.0, 30, 'K', 0],[47.0, 77, 'K', 1],[58.0, 5, '%', 1],[62.0, 0.6, 'kOe', 1],[68.0, 13, '%', 1],[72.0, 3, 'kOe', 1]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11476, 11476)
 The DLCM<missing VAR>O films exhibit resonable low fieldmagnetoresistance and at 77K the magnetoresistance ratio is  5% at 0.6 kOe and 13% at 3 kOe.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 107, 'K', 6],[130.0, 225, 'K', 5],[103.0, 55, 'K', 4],[24.0, 30, 'K', 1],[20.0, 77, 'K', 0],[31.0, 5, '%', 0],[35.0, 0.6, 'kOe', 0],[41.0, 13, '%', 0],[45.0, 3, 'kOe', 0]

O
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(11478, 11478)
 The DLCM<missing VAR>O films exhibit resonable low fieldmagnetoresistance and at 77K the magnetoresistance ratio is  5% at 0.6 kOe and 13% at 3 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 107, 'K', 6],[132.0, 225, 'K', 5],[105.0, 55, 'K', 4],[26.0, 30, 'K', 1],[18.0, 77, 'K', 0],[29.0, 5, '%', 0],[33.0, 0.6, 'kOe', 0],[39.0, 13, '%', 0],[43.0, 3, 'kOe', 0]

Fe/MgO/Fe
###First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers|Derek Waldron,Vladimir Timoshevskii,Yibin Hu,Ke Xia,Hong Guo###
(11546, 11551)
First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[202.0, 1, 'V', 3]

Fe/MgO/Fe
###First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers|Derek Waldron,Vladimir Timoshevskii,Yibin Hu,Ke Xia,Hong Guo###
(11614, 11619)
 By carrying out density functional theory analysis within the Keldyshnon-equilibrium Greens<missing VAR> functional formalism, we have calculated the nonlinearand non-equilibrium quantum transport properties of Fe/MgO/Fe trilayerstructures as a function of external bias voltage.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[134.0, 1, 'V', 2]

As
###First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers|Derek Waldron,Vladimir Timoshevskii,Yibin Hu,Ke Xia,Hong Guo###
(11712, 11712)
 As a function of external bias voltage, the TMRreduces monotonically to zero with a voltage scale of about 1V, in agreementwith experimental observations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 1, 'V', 0]

Fe
###First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers|Derek Waldron,Vladimir Timoshevskii,Yibin Hu,Ke Xia,Hong Guo###
(11814, 11814)
 We present understanding of the nonequilibriumtransport properties by investigating microscopic details of the scatteringstates and the Bloch bands of the Fe leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1, 'V', 1]

Co60Fe20B20/MgO/Co60Fe20B20
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(12002, 12017)
 Here we present direct measurements of boththe magnitude and direction of the spin torque in Co60Fe20B20/MgO/Co60Fe20B20MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[203.0, 30, '%', 3]

At
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(12025, 12025)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(12031, 12031)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(12046, 12046)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(12121, 12121)
 Withincreasing bias, the in-plane component d<missing VAR>tauparallel/d<missing VAR>V remains large, instriking contrast to the decreasing magnetoresistance ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 30, '%', 1]

(V)
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(12185, 12187)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 30, '%', 0]

V2
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(12199, 12200)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 30, '%', 0]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(12207, 12207)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 30, '%', 0]

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12254, 12254)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12256, 12257)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12259, 12259)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SB
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12290, 12291)
 We present a computationally efficient transferable single-band tight-bindingmodel (SBT<missing VAR>B) for spin polarized transport in heterostructures with an effort tocapture the band structure effects.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12293, 12293)
 We present a computationally efficient transferable single-band tight-bindingmodel (SBT<missing VAR>B) for spin polarized transport in heterostructures with an effort tocapture the band structure effects.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12328, 12328)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12350, 12350)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12352, 12353)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SB
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12449, 12450)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12452, 12452)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12509, 12510)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12565, 12565)
 Features like I-V characteristics, voltage dependence and thebarrier width dependence of the tunnel magnetoresistance ratio are capturedquantitatively and the trends match well with the ones observed by ab initiomethods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(12567, 12567)
 Features like I-V characteristics, voltage dependence and thebarrier width dependence of the tunnel magnetoresistance ratio are capturedquantitatively and the trends match well with the ones observed by ab initiomethods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Unveiling First Order CMR Transitions in the Two-Orbital Model for Manganites|Cengiz Şen,Gonzalo Alvarez,Elbio Dagotto###
(12646, 12646)
Unveiling First Order CMR Transitions in the Two-Orbital Model for Manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 10, ',', 2],[151.0, 0, '%', 2]

At
###Unveiling First Order CMR Transitions in the Two-Orbital Model for Manganites|Cengiz Şen,Gonzalo Alvarez,Elbio Dagotto###
(12713, 12713)
 Athole density x<missing VAR>1/4 and in the vicinity of the region of competition between theferromagnetic metallic and spin-charge-orbital ordered insulating phases, thecolossal magnetoresistance (CMR) phenomenon is observed with amagnetoresistance ratio 10,000% Our main result is that this CMR transition isfound to be of first order in some portions of the phase diagram, in agreementwith early results from neutron scattering, specific heat, and magnetization,thus solving a notorious discrepancy between experiments and previoustheoretical studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 10, ',', 0],[84.0, 0, '%', 0]

C
###Unveiling First Order CMR Transitions in the Two-Orbital Model for Manganites|Cengiz Şen,Gonzalo Alvarez,Elbio Dagotto###
(12775, 12775)
 Athole density x<missing VAR>1/4 and in the vicinity of the region of competition between theferromagnetic metallic and spin-charge-orbital ordered insulating phases, thecolossal magnetoresistance (CMR) phenomenon is observed with amagnetoresistance ratio 10,000% Our main result is that this CMR transition isfound to be of first order in some portions of the phase diagram, in agreementwith early results from neutron scattering, specific heat, and magnetization,thus solving a notorious discrepancy between experiments and previoustheoretical studies.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 10, ',', 0],[22.0, 0, '%', 0]

C
###Unveiling First Order CMR Transitions in the Two-Orbital Model for Manganites|Cengiz Şen,Gonzalo Alvarez,Elbio Dagotto###
(12812, 12812)
 Athole density x<missing VAR>1/4 and in the vicinity of the region of competition between theferromagnetic metallic and spin-charge-orbital ordered insulating phases, thecolossal magnetoresistance (CMR) phenomenon is observed with amagnetoresistance ratio 10,000% Our main result is that this CMR transition isfound to be of first order in some portions of the phase diagram, in agreementwith early results from neutron scattering, specific heat, and magnetization,thus solving a notorious discrepancy between experiments and previoustheoretical studies.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 10, ',', 0],[15.0, 0, '%', 0]

In
###Gate voltage controlled electronic transport through a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator|K. H. Zhang,Z. C. Wang,Q. R. Zheng,G. Su###
(13198, 13198)
 In addition, when there exists amagnetization component in the surface plane, it is shown that only thecomponent parallel to the junction interface has an influence on theconductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Negative Magnetoresistance and Spin Filtering of Spin-Coupled Diiron-Oxo Clusters|Rui-Ning Wang,Jorge H. Rodriguez,Wu-Ming Liu###
(13449, 13449)
 Applied biases lower than 0.3V, in conjunction with sulfur anchoring, induce a negative magnetoresistancedue to lowering of the anchor-scatterer tunneling barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 6000, '%', 1]

In
###Negative Magnetoresistance and Spin Filtering of Spin-Coupled Diiron-Oxo Clusters|Rui-Ning Wang,Jorge H. Rodriguez,Wu-Ming Liu###
(13491, 13491)
 In addition, thediiron-oxo cluster displays nearly perfect spin filtering for parallelalignment of the iron magnetic moments due to energetic proximity, relative tothe Fermi level, of its highest occupied molecular orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 6000, '%', 2]

P
###Superpoissonian shot noise in organic magnetic tunnel junctions|Juan Pedro Cascales,Jhen-Yong Hong,Isidoro Martinez,Minn-Tsong Lin,Tomasz Szczepanski,Vitalii K. Dugaev,Jozef Barnas,Farkad G. Aliev###
(13669, 13669)
 Here we investigate conductance and shotnoise in magnetic tunnel junctions with PTCDA barriers a few nm thick.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 10, 'and', 1],[43.0, 40, '%', 1]

P
###Superpoissonian shot noise in organic magnetic tunnel junctions|Juan Pedro Cascales,Jhen-Yong Hong,Isidoro Martinez,Minn-Tsong Lin,Tomasz Szczepanski,Vitalii K. Dugaev,Jozef Barnas,Farkad G. Aliev###
(13839, 13839)
 We explain our main findings in terms of a model which includestunneling through a two level (or multilevel) system, originated frominterfacial bonds of the PTCDA molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 10, 'and', 2],[127.0, 40, '%', 2]

K
###Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond|Yamaguchi Takahide,Yosuke Sasama,Masashi Tanaka,Hiroyuki Takeya,Yoshihiko Takano,Taisuke Kageura,Hiroshi Kawarada###
(14011, 14011)
 Unexpectedly, theobserved magnetoresistance is positive within the range of 2<T<missing VAR><10 K and -7<B<7T<missing VAR>, in striking contrast to the negative magnetoresistance previously detectedfor similar devices with (111)-oriented diamond surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, '<', 0],[4.0, -7, '<', 0]

B
###Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond|Yamaguchi Takahide,Yosuke Sasama,Masashi Tanaka,Hiroyuki Takeya,Yoshihiko Takano,Taisuke Kageura,Hiroshi Kawarada###
(14018, 14018)
 Unexpectedly, theobserved magnetoresistance is positive within the range of 2<T<missing VAR><10 K and -7<B<7T<missing VAR>, in striking contrast to the negative magnetoresistance previously detectedfor similar devices with (111)-oriented diamond surfaces.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, '<', 0],[3.0, -7, '<', 0]

(B)
###Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond|Yamaguchi Takahide,Yosuke Sasama,Masashi Tanaka,Hiroyuki Takeya,Yoshihiko Takano,Taisuke Kageura,Hiroshi Kawarada###
(14158, 14160)
 Furthermore we find1) magnetoresistance is orders of magnitude larger than that of the classicalorbital magnetoresistance; 2) magnetoresistance is nearly independent of thedirection of the applied magnetic field; 3) for the in-plane field, themagnetoresistance ratio defined as [rho(B)-rho(0)]/rho(0) follows a universalfunction of B/T<missing VAR>.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 2, '<', 1],[143.0, -7, '<', 1]

B
###Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond|Yamaguchi Takahide,Yosuke Sasama,Masashi Tanaka,Hiroyuki Takeya,Yoshihiko Takano,Taisuke Kageura,Hiroshi Kawarada###
(14184, 14184)
 Furthermore we find1) magnetoresistance is orders of magnitude larger than that of the classicalorbital magnetoresistance; 2) magnetoresistance is nearly independent of thedirection of the applied magnetic field; 3) for the in-plane field, themagnetoresistance ratio defined as [rho(B)-rho(0)]/rho(0) follows a universalfunction of B/T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2, '<', 1],[169.0, -7, '<', 1]

GaMnAs
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(14264, 14266)
Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, -10.8, 'V', 2],[201.0, 3.5, 'K', 2]

OSF
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(14317, 14319)
 We fabricate a vertical spin metal-oxide-semiconductor field-effecttransistor (spin-M<missing VAR>OSFET) structure, which is composed of an epitaxialsingle-crystal heterostructure with a ferromagnetic-semiconductor GaMnAssource/drain, and investigate its spin-dependent transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, -10.8, 'V', 1],[148.0, 3.5, 'K', 1]

GaMnAs
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(14354, 14356)
 We fabricate a vertical spin metal-oxide-semiconductor field-effecttransistor (spin-M<missing VAR>OSFET) structure, which is composed of an epitaxialsingle-crystal heterostructure with a ferromagnetic-semiconductor GaMnAssource/drain, and investigate its spin-dependent transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, -10.8, 'V', 1],[111.0, 3.5, 'K', 1]

I
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(14392, 14392)
 Wemodulate the drain-source current ID<missing VAR>S by  or -0.5 % with a gate-sourcevoltage of  or -10.8 V and also modulate ID<missing VAR>S by up to 60 % with changing themagnetization configuration of the GaMnAs source/drain at 3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, -10.8, 'V', 0],[75.0, 3.5, 'K', 0]

S
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(14394, 14394)
 Wemodulate the drain-source current ID<missing VAR>S by  or -0.5 % with a gate-sourcevoltage of  or -10.8 V and also modulate ID<missing VAR>S by up to 60 % with changing themagnetization configuration of the GaMnAs source/drain at 3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, -10.8, 'V', 0],[73.0, 3.5, 'K', 0]

I
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(14429, 14429)
 Wemodulate the drain-source current ID<missing VAR>S by  or -0.5 % with a gate-sourcevoltage of  or -10.8 V and also modulate ID<missing VAR>S by up to 60 % with changing themagnetization configuration of the GaMnAs source/drain at 3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, -10.8, 'V', 0],[38.0, 3.5, 'K', 0]

S
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(14431, 14431)
 Wemodulate the drain-source current ID<missing VAR>S by  or -0.5 % with a gate-sourcevoltage of  or -10.8 V and also modulate ID<missing VAR>S by up to 60 % with changing themagnetization configuration of the GaMnAs source/drain at 3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, -10.8, 'V', 0],[36.0, 3.5, 'K', 0]

GaMnAs
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(14458, 14460)
 Wemodulate the drain-source current ID<missing VAR>S by  or -0.5 % with a gate-sourcevoltage of  or -10.8 V and also modulate ID<missing VAR>S by up to 60 % with changing themagnetization configuration of the GaMnAs source/drain at 3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, -10.8, 'V', 0],[7.0, 3.5, 'K', 0]

OSF
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(14513, 14515)
 Themagnetoresistance ratio is more than two orders of magnitude higher than thatobtained in the previous studies on spin M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, -10.8, 'V', 1],[46.0, 3.5, 'K', 1]

OSF
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(14552, 14554)
 Our result shows that avertical structure is one of the hopeful candidates for spin M<missing VAR>OSFET when thedevice size is reduced to a sub-micron or nanometer scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, -10.8, 'V', 2],[85.0, 3.5, 'K', 2]

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(14737, 14738)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 20, '%', 1]

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(14760, 14761)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 20, '%', 1]

MgO
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(14790, 14791)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 20, '%', 1]

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(14829, 14830)
 The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 20, '%', 0]

FeRh/MgO
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(14903, 14907)
 Both the polarityand magnitude of the phase transition tunneling anisotropic magnetoresistancecan be modulated by interfacial engineering at the alfa-FeRh/MgO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 20, '%', 1]

Fe
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(14965, 14965)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 25, '%', 6],[337.0, 60, '%', 6],[364.0, 350, 'C', 6]

Pd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(14967, 14967)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 25, '%', 6],[335.0, 60, '%', 6],[362.0, 350, 'C', 6]

Ru
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(14979, 14979)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 25, '%', 6],[323.0, 60, '%', 6],[350.0, 350, 'C', 6]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15016, 15016)
 Magnetic materials that possess large bulk perpendicular magnetic anisotropy(PM<missing VAR>A) are essential for the development of magnetic tunnel junctions (MTJs)used in future spintronic memory and logic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 25, '%', 5],[286.0, 60, '%', 5],[313.0, 350, 'C', 5]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15129, 15129)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 25, '%', 3],[173.0, 60, '%', 3],[200.0, 350, 'C', 3]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15131, 15131)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 25, '%', 3],[171.0, 60, '%', 3],[198.0, 350, 'C', 3]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15133, 15133)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 25, '%', 3],[169.0, 60, '%', 3],[196.0, 350, 'C', 3]

FePd/Ru/FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15152, 15158)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[140.0, 25, '%', 3],[144.0, 60, '%', 3],[171.0, 350, 'C', 3]

Ru
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15178, 15178)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 25, '%', 3],[124.0, 60, '%', 3],[151.0, 350, 'C', 3]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15189, 15190)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 25, '%', 2],[112.0, 60, '%', 2],[139.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15192, 15192)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 25, '%', 2],[110.0, 60, '%', 2],[137.0, 350, 'C', 2]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15194, 15194)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 25, '%', 2],[108.0, 60, '%', 2],[135.0, 350, 'C', 2]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15196, 15196)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 25, '%', 2],[106.0, 60, '%', 2],[133.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15209, 15209)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 25, '%', 2],[93.0, 60, '%', 2],[120.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15252, 15252)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 25, '%', 1],[50.0, 60, '%', 1],[77.0, 350, 'C', 1]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15266, 15267)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 25, '%', 1],[35.0, 60, '%', 1],[62.0, 350, 'C', 1]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15269, 15269)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 25, '%', 1],[33.0, 60, '%', 1],[60.0, 350, 'C', 1]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15271, 15271)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 25, '%', 1],[31.0, 60, '%', 1],[58.0, 350, 'C', 1]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15273, 15273)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 25, '%', 1],[29.0, 60, '%', 1],[56.0, 350, 'C', 1]

K
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15319, 15319)
 Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 25, '%', 0],[17.0, 60, '%', 0],[10.0, 350, 'C', 0]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15352, 15352)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 25, '%', 1],[50.0, 60, '%', 1],[23.0, 350, 'C', 1]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15365, 15366)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 25, '%', 1],[63.0, 60, '%', 1],[36.0, 350, 'C', 1]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15368, 15368)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 25, '%', 1],[66.0, 60, '%', 1],[39.0, 350, 'C', 1]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15370, 15370)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 25, '%', 1],[68.0, 60, '%', 1],[41.0, 350, 'C', 1]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(15372, 15372)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 25, '%', 1],[70.0, 60, '%', 1],[43.0, 350, 'C', 1]

CuMnAs
###Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses|Zdeněk Kašpar,Miloslav Surýnek,Jan Zubáč,Filip Krizek,Vít Novák,Richard P. Campion,Martin S. Wörnle,Pietro Gambardella,Xavier Marti,Petr Němec,K. W. Edmonds,S. Reimers,O. J. Amin,F. Maccherozzi,S. S. Dhesi,Peter Wadley,Jörg Wunderlich,Kamil Olejník,Tomáš Jungwirth###
(15641, 15643)
 Here we reportreversible and reproducible quenching of an antiferromagnetic CuMnAs film byeither electrical or ultrashort optical pulses into nano-fragmented domainstates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 20, '%', 1]

Al2O3
###Giant thermoelectric effect in Al2O3 magnetic tunnel junctions|Weiwei Lin,Michel Hehn,Laurent Chaput,Béatrice Negulescu,Stéphane Andrieu,François Montaigne,Stéphane Mangin###
(15795, 15798)
Giant thermoelectric effect in Al2O3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 1, 'mV', 4]

Al2O3
###Giant thermoelectric effect in Al2O3 magnetic tunnel junctions|Weiwei Lin,Michel Hehn,Laurent Chaput,Béatrice Negulescu,Stéphane Andrieu,François Montaigne,Stéphane Mangin###
(15898, 15901)
 Here we report on giant magnetothermoelectric effect in Al2O3magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1, 'mV', 1]

BN
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(16102, 16103)
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-h<missing VAR>BN/graphene/h<missing VAR>BN heterostructures.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 100, '%', 0],[141.0, 50, '%', 3],[146.0, 135, '%', 3],[184.0, -70, '%', 3],[189.0, -60, '%', 3],[203.0, -0.4, 'V', 3],[298.0, 2.7, '%', 5]

BN
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(16108, 16109)
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-h<missing VAR>BN/graphene/h<missing VAR>BN heterostructures.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 100, '%', 0],[135.0, 50, '%', 3],[140.0, 135, '%', 3],[178.0, -70, '%', 3],[183.0, -60, '%', 3],[197.0, -0.4, 'V', 3],[292.0, 2.7, '%', 5]

BN
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(16129, 16130)
 We study spin transport in a fully h<missing VAR>BN encapsulated monolayer-graphene vander Waals (vdW) heterostructure, at room temperature.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 100, '%', 1],[114.0, 50, '%', 2],[119.0, 135, '%', 2],[157.0, -70, '%', 2],[162.0, -60, '%', 2],[176.0, -0.4, 'V', 2],[271.0, 2.7, '%', 4]

W
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(16147, 16147)
 We study spin transport in a fully h<missing VAR>BN encapsulated monolayer-graphene vander Waals (vdW) heterostructure, at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 100, '%', 1],[97.0, 50, '%', 2],[102.0, 135, '%', 2],[140.0, -70, '%', 2],[145.0, -60, '%', 2],[159.0, -0.4, 'V', 2],[254.0, 2.7, '%', 4]

BN
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(16172, 16173)
 A top-layer ofbilayer-h<missing VAR>BN is used as a tunnel barrier for spin-injection and detection ingraphene with ferromagnetic cobalt electrodes.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 100, '%', 2],[71.0, 50, '%', 1],[76.0, 135, '%', 1],[114.0, -70, '%', 1],[119.0, -60, '%', 1],[133.0, -0.4, 'V', 1],[228.0, 2.7, '%', 3]

V
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(16267, 16267)
 We report surprisingly large andbias induced (differential) spin-injection (detection) polarizations up to 50%(135%) at a positive voltage bias of 0.6 V, as well as sign invertedpolarizations up to -70% (-60%) at a reverse bias of -0.4 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 100, '%', 3],[23.0, 50, '%', 0],[18.0, 135, '%', 0],[20.0, -70, '%', 0],[25.0, -60, '%', 0],[39.0, -0.4, 'V', 0],[134.0, 2.7, '%', 2]

BN
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(16323, 16324)
 This demonstratesthe potential of bilayer-h<missing VAR>BN tunnel barriers for practical graphene spintronicsapplications.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 100, '%', 4],[79.0, 50, '%', 1],[74.0, 135, '%', 1],[36.0, -70, '%', 1],[31.0, -60, '%', 1],[17.0, -0.4, 'V', 1],[77.0, 2.7, '%', 1]

V
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(16423, 16423)
 With such enhanced spin-injection and detection polarizations, wereport a record two-terminal (inverted) spin-valve signals up to 800 Omegawith a magnetoresistance ratio of 2.7%, and we achieve spin accumulations up to4.1 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 100, '%', 5],[179.0, 50, '%', 2],[174.0, 135, '%', 2],[136.0, -70, '%', 2],[131.0, -60, '%', 2],[117.0, -0.4, 'V', 2],[22.0, 2.7, '%', 0]

In
###Giant Thermal Magnetoresistance Driven by Graphene Magnetoplasmon|Ming-Jian He,Hong Qi,Yan-Xiong Su,Ya-Tao Ren,Yi-Jun Zhao,Mauro Antezza###
(16486, 16486)
 In this work, we have predicted a giant thermal magnetoresistance for thethermal photon transport based on the tunable magnetoplasmon of graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 4, 'Tesla', 2]

NbSe2
###Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim###
(16832, 16834)
 We report unidirectional charge transport in a mathrmNbSe2noncentrosymmetric superconductor, which is exchange-coupled with amathrmCrPS4 van der Waals layered antiferromagnetic insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 16, '%', 1],[159.0, 40, '%', 2]

CrPS4
###Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim###
(16856, 16859)
 We report unidirectional charge transport in a mathrmNbSe2noncentrosymmetric superconductor, which is exchange-coupled with amathrmCrPS4 van der Waals layered antiferromagnetic insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0.6666666666666666,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 16, '%', 1],[134.0, 40, '%', 2]

NbSe2/CrPS4
###Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim###
(16878, 16885)
 ThemathrmNbSe2/CrPS4 bilayer device exhibits bias-dependent superconductingcritical-current variations of up to 16%, with the magnetochiral anisotropyreaching sim 105mathrm T<missing VAR>-1A-1.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[27.0, 16, '%', 0],[108.0, 40, '%', 1]

CrPS4/NbSe2/CrPS4
###Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim###
(16948, 16960)
 Furthermore, themathrmCrPS4/NbSe2/CrPS4 spin-valve structure exhibits thesuperconducting diode effect with critical-current variations of up to 40%.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 16, '%', 1],[33.0, 40, '%', 0]

La2-xSr
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(17143, 17147)
Magnetotransport in overdoped La2-xSrx<missing VAR>CuO4 Effect of anisotropic scattering.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(17149, 17151)
Magnetotransport in overdoped La2-xSrx<missing VAR>CuO4 Effect of anisotropic scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(17201, 17201)
 We revisit the Hall effect and magnetoresistivity by incorporating theanisotropic scattering caused by apical oxygen vacancies in overdoped La-basedcuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(17269, 17269)
 In particular, we obtain theupturn of Hall coefficient R<missing VAR>H with decreasing temperature T<missing VAR>, the initialdrop of R<missing VAR>H in magnetic field B in all overdoped regimes, the linearresistivity rho versus B near the van Hove doping level, the temperaturedependence of the magnetoresistivity ratio, and the violation of Kohlers<missing VAR> law.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(17290, 17290)
 In particular, we obtain theupturn of Hall coefficient R<missing VAR>H with decreasing temperature T<missing VAR>, the initialdrop of R<missing VAR>H in magnetic field B in all overdoped regimes, the linearresistivity rho versus B near the van Hove doping level, the temperaturedependence of the magnetoresistivity ratio, and the violation of Kohlers<missing VAR> law.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(17311, 17311)
 In particular, we obtain theupturn of Hall coefficient R<missing VAR>H with decreasing temperature T<missing VAR>, the initialdrop of R<missing VAR>H in magnetic field B in all overdoped regimes, the linearresistivity rho versus B near the van Hove doping level, the temperaturedependence of the magnetoresistivity ratio, and the violation of Kohlers<missing VAR> law.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(17319, 17319)
 In particular, we obtain theupturn of Hall coefficient R<missing VAR>H with decreasing temperature T<missing VAR>, the initialdrop of R<missing VAR>H in magnetic field B in all overdoped regimes, the linearresistivity rho versus B near the van Hove doping level, the temperaturedependence of the magnetoresistivity ratio, and the violation of Kohlers<missing VAR> law.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(17341, 17341)
 In particular, we obtain theupturn of Hall coefficient R<missing VAR>H with decreasing temperature T<missing VAR>, the initialdrop of R<missing VAR>H in magnetic field B in all overdoped regimes, the linearresistivity rho versus B near the van Hove doping level, the temperaturedependence of the magnetoresistivity ratio, and the violation of Kohlers<missing VAR> law.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(17412, 17416)
These results suggest that many of the anomalous transport behaviors inoverdoped La2-xSrx<missing VAR>CuO4 could actually be understood within the Fermiliquid picture.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(17418, 17420)
These results suggest that many of the anomalous transport behaviors inoverdoped La2-xSrx<missing VAR>CuO4 could actually be understood within the Fermiliquid picture.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(17520, 17520)
 In this letter, we report on lateralelectric-field driven strain-mediated modulation of magnetic properties inCo/Cu/Py pseudo spin valve grown on ferroelectric PM<missing VAR>N-PT<missing VAR> substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(17557, 17559)
 In this letter, we report on lateralelectric-field driven strain-mediated modulation of magnetic properties inCo/Cu/Py pseudo spin valve grown on ferroelectric PM<missing VAR>N-PT<missing VAR> substrate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(17575, 17575)
 In this letter, we report on lateralelectric-field driven strain-mediated modulation of magnetic properties inCo/Cu/Py pseudo spin valve grown on ferroelectric PM<missing VAR>N-PT<missing VAR> substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(17577, 17577)
 In this letter, we report on lateralelectric-field driven strain-mediated modulation of magnetic properties inCo/Cu/Py pseudo spin valve grown on ferroelectric PM<missing VAR>N-PT<missing VAR> substrate.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(17579, 17579)
 In this letter, we report on lateralelectric-field driven strain-mediated modulation of magnetic properties inCo/Cu/Py pseudo spin valve grown on ferroelectric PM<missing VAR>N-PT<missing VAR> substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(17640, 17640)
 We showa decrease of the giant magnetoresistance ratio of the pseudo spin valve withincreasing electric field, which is attributed to the deviation of the Co layermagnetization from the initial direction due to strain-induced magnetoelasticanisotropy contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(17706, 17706)
 Additionally, we demonstrate that strain-inducedmagnetic anisotropy effectively shifts the switching field of themagnetostrictive Co layer, while keeping the switching field of the nearlyzero-magnetostrictive Py layer unaffected due to its negligiblemagnetostriction constant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(17854, 17854)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 15, ',', 5]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(17867, 17867)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 15, ',', 5]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(17873, 17873)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 15, ',', 5]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(17939, 17939)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 15, ',', 5]

In
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(17972, 17972)
 In order to sense all the states, 4-valued conductancescorresponding to the respective states are necessary.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 15, ',', 4]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(18030, 18030)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 15, ',', 3]

(SPS)
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(18040, 18044)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 15, ',', 3]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(18046, 18046)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 15, ',', 3]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(18056, 18056)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 15, ',', 3]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(18062, 18062)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 15, ',', 3]

In
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(18111, 18111)
 In this paper, anideal SPS is considered as a single-wall armchair carbon nanotube encapsulatingmagnetic atoms, where the nanotube shows on-resonance or off-resonance at theFermi level according to its length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 15, ',', 1]

SPS
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(18123, 18125)
 In this paper, anideal SPS is considered as a single-wall armchair carbon nanotube encapsulatingmagnetic atoms, where the nanotube shows on-resonance or off-resonance at theFermi level according to its length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 15, ',', 1]

Cu
###Oxide spintronics|Manuel Bibes,Agnes Barthelemy###
(18426, 18426)
 While this was at first motivated by thediscovery of high-temperature superconductivity in perovskite Cu oxides, thistechnological breakthrough was soon applied to other transition metal oxides,and notably mixed-valence manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Oxide spintronics|Manuel Bibes,Agnes Barthelemy###
(18646, 18646)
 In this paper, we will review the most important results onoxide spintronics, emphasizing materials physics as well as spin-dependenttransport phenomena, and finally give some perspectives on how the flurry ofnew magnetic oxides could be useful for next-generation spintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe/NiCoO/CoFe/Cu/CoFe
###Impact of in-plane currents on magnetoresistance properties of an exchange-biased spin-valve with insulating antiferromagnetic layer|D. N. H. Nam,N. C. Thuan,L. V. Hong,N. X. Phuc,S. A. Wolf,N. V. Dai,Y. P. Lee###
(18821, 18834)
 The impact of in-plane alternating currents on the exchange bias, resistance,and magnetoresistance of a CoFe/NiCoO/CoFe/Cu/CoFe spin-valve is studied.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

NiCoO
###Impact of in-plane currents on magnetoresistance properties of an exchange-biased spin-valve with insulating antiferromagnetic layer|D. N. H. Nam,N. C. Thuan,L. V. Hong,N. X. Phuc,S. A. Wolf,N. V. Dai,Y. P. Lee###
(18912, 18914)
 Since the NiCoOoxide is a good insulator, it is expected that the ac current flows only in theCoFe/Cu/CoFe top layers, thus ruling out any presence of spin-transfer torqueacting on the spins in the antiferromagnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe/Cu/CoFe
###Impact of in-plane currents on magnetoresistance properties of an exchange-biased spin-valve with insulating antiferromagnetic layer|D. N. H. Nam,N. C. Thuan,L. V. Hong,N. X. Phuc,S. A. Wolf,N. V. Dai,Y. P. Lee###
(18951, 18957)
 Since the NiCoOoxide is a good insulator, it is expected that the ac current flows only in theCoFe/Cu/CoFe top layers, thus ruling out any presence of spin-transfer torqueacting on the spins in the antiferromagnetic layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(19171, 19171)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(19175, 19175)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(19185, 19188)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(19235, 19238)
 The half-metallic Heusler compound Co2MnSi is a very attractive materialfor spintronic devices because it exhibits very high tunnellingmagnetoresistance ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(19294, 19297)
 This work reports on a spectroscopic investigation ofthin Co2MnSi films as they are used as electrodes in magnetic tunneljunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(19356, 19356)
 The investigated films exhibit a remanent in-plane magnetisationwith a magnetic moment of about 5muB when saturated, as expected.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(19415, 19415)
 Magneticdichroism in emission and absorption was measured at the Co and Mn 2p<missing VAR> corelevels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(19419, 19419)
 Magneticdichroism in emission and absorption was measured at the Co and Mn 2p<missing VAR> corelevels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(19465, 19465)
 The photoelectron spectra were excited by circularly polarised hardX<missing VAR>-rays with an energy of of 6keV and taken from the remanently magnetisedfilm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(19558, 19558)
 An analysis reveals thelocalised character of the electrons and magnetic moments attributed to the Mnatoms, whereas the electrons related to the Co atoms contribute an itinerantpart to the total magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(19576, 19576)
 An analysis reveals thelocalised character of the electrons and magnetic moments attributed to the Mnatoms, whereas the electrons related to the Co atoms contribute an itinerantpart to the total magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19624, 19624)
Enhanced conduction band density of states in intermetallic EuT<missing VAR>Si3 (T<missing VAR>Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, 'K', 3],[144.0, 13, 'T', 3],[217.0, 50, 'K', 4],[495.0, 2, 'K', 8],[505.0, 14, 'T', 8]

Si3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19626, 19627)
Enhanced conduction band density of states in intermetallic EuT<missing VAR>Si3 (T<missing VAR>Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2, 'K', 3],[141.0, 13, 'T', 3],[214.0, 50, 'K', 4],[492.0, 2, 'K', 8],[502.0, 14, 'T', 8]

Rh
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19631, 19631)
Enhanced conduction band density of states in intermetallic EuT<missing VAR>Si3 (T<missing VAR>Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'K', 3],[137.0, 13, 'T', 3],[210.0, 50, 'K', 4],[488.0, 2, 'K', 8],[498.0, 14, 'T', 8]

Ir
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19634, 19634)
Enhanced conduction band density of states in intermetallic EuT<missing VAR>Si3 (T<missing VAR>Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2, 'K', 3],[134.0, 13, 'T', 3],[207.0, 50, 'K', 4],[485.0, 2, 'K', 8],[495.0, 14, 'T', 8]

EuRhSi3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19656, 19659)
 We report on the physical properties of single crystalline EuRhSi3 andpolycrystalline EuIrSi3, inferred from magnetisation, electrical transport,heat capacity and 151Eu M<missing VAR>ossbauer spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'K', 2],[109.0, 13, 'T', 2],[182.0, 50, 'K', 3],[460.0, 2, 'K', 7],[470.0, 14, 'T', 7]

EuIrSi3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19666, 19669)
 We report on the physical properties of single crystalline EuRhSi3 andpolycrystalline EuIrSi3, inferred from magnetisation, electrical transport,heat capacity and 151Eu M<missing VAR>ossbauer spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2, 'K', 2],[99.0, 13, 'T', 2],[172.0, 50, 'K', 3],[450.0, 2, 'K', 7],[460.0, 14, 'T', 7]

Eu
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19692, 19692)
 We report on the physical properties of single crystalline EuRhSi3 andpolycrystalline EuIrSi3, inferred from magnetisation, electrical transport,heat capacity and 151Eu M<missing VAR>ossbauer spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 2, 'K', 2],[76.0, 13, 'T', 2],[149.0, 50, 'K', 3],[427.0, 2, 'K', 7],[437.0, 14, 'T', 7]

BaNiSn3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19717, 19720)
 These previously knowncompounds crystallise in the tetragonal BaNiSn3-type structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'K', 1],[48.0, 13, 'T', 1],[121.0, 50, 'K', 2],[399.0, 2, 'K', 6],[409.0, 14, 'T', 6]

EuRhSi3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19738, 19741)
 The singlecrystal magnetisation in EuRhSi3 has a strongly anisotropic behaviour at 2 Kwith a spin-flop field of 13 T, and we present a model of these magneticproperties which allows the exchange constants to be determined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'K', 0],[27.0, 13, 'T', 0],[100.0, 50, 'K', 1],[378.0, 2, 'K', 5],[388.0, 14, 'T', 5]

In
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19807, 19807)
 In bothcompounds, specific heat shows the presence of a cascade of two closetransitions near 50 K, and the 151Eu M<missing VAR>ossbauer spectra demonstrate thatthe intermediate phase has an incommensurate amplitude modulated structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, 'K', 1],[39.0, 13, 'T', 1],[34.0, 50, 'K', 0],[312.0, 2, 'K', 4],[322.0, 14, 'T', 4]

Eu
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19849, 19849)
 In bothcompounds, specific heat shows the presence of a cascade of two closetransitions near 50 K, and the 151Eu M<missing VAR>ossbauer spectra demonstrate thatthe intermediate phase has an incommensurate amplitude modulated structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'K', 1],[81.0, 13, 'T', 1],[8.0, 50, 'K', 0],[270.0, 2, 'K', 4],[280.0, 14, 'T', 4]

KKY
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19915, 19917)
 Wefind anomalously large values, with respect to other members of the series, forthe R<missing VAR>KKY Neel temperature, for the spin-flop field (13 T), for the spin-wavegap (simeq 20-25 K) inferred from both resistivity and specific heat data,for the spin-disorder resistivity in EuRhSi3 (simeq 35 muOhm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 2, 'K', 2],[147.0, 13, 'T', 2],[74.0, 50, 'K', 1],[202.0, 2, 'K', 3],[212.0, 14, 'T', 3]

N
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19919, 19919)
 Wefind anomalously large values, with respect to other members of the series, forthe R<missing VAR>KKY Neel temperature, for the spin-flop field (13 T), for the spin-wavegap (simeq 20-25 K) inferred from both resistivity and specific heat data,for the spin-disorder resistivity in EuRhSi3 (simeq 35 muOhm.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2, 'K', 2],[151.0, 13, 'T', 2],[78.0, 50, 'K', 1],[200.0, 2, 'K', 3],[210.0, 14, 'T', 3]

K
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19960, 19960)
 Wefind anomalously large values, with respect to other members of the series, forthe R<missing VAR>KKY Neel temperature, for the spin-flop field (13 T), for the spin-wavegap (simeq 20-25 K) inferred from both resistivity and specific heat data,for the spin-disorder resistivity in EuRhSi3 (simeq 35 muOhm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 2, 'K', 2],[192.0, 13, 'T', 2],[119.0, 50, 'K', 1],[159.0, 2, 'K', 3],[169.0, 14, 'T', 3]

EuRhSi3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(19993, 19996)
 Wefind anomalously large values, with respect to other members of the series, forthe R<missing VAR>KKY Neel temperature, for the spin-flop field (13 T), for the spin-wavegap (simeq 20-25 K) inferred from both resistivity and specific heat data,for the spin-disorder resistivity in EuRhSi3 (simeq 35 muOhm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, 'K', 2],[225.0, 13, 'T', 2],[152.0, 50, 'K', 1],[123.0, 2, 'K', 3],[133.0, 14, 'T', 3]

EuIrSi3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(20091, 20094)
 EuIrSi3exhibits a giant magnetoresistance ratio, with values exceeding 600 % at 2 K ina field of 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 2, 'K', 5],[323.0, 13, 'T', 5],[250.0, 50, 'K', 4],[25.0, 2, 'K', 0],[35.0, 14, 'T', 0]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(20186, 20186)
 We have investigated different geometries of two dimensional (2D) infinitelength Ni nanowires of increasing width using spin density functional theorycalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'D', 1],[147.0, 2, 'D', 4]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(20343, 20343)
 All 2D nanowires as well as Ni (111)and Ni (100) monolayer investigated are ferromagnetic under the Stonercriterion and exhibit enhanced magnetic moments as compared to bulk Ni and therespective Ni monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 2, 'D', 5],[10.0, 2, 'D', 0]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(20352, 20352)
 All 2D nanowires as well as Ni (111)and Ni (100) monolayer investigated are ferromagnetic under the Stonercriterion and exhibit enhanced magnetic moments as compared to bulk Ni and therespective Ni monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 2, 'D', 5],[19.0, 2, 'D', 0]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(20393, 20393)
 All 2D nanowires as well as Ni (111)and Ni (100) monolayer investigated are ferromagnetic under the Stonercriterion and exhibit enhanced magnetic moments as compared to bulk Ni and therespective Ni monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2, 'D', 5],[60.0, 2, 'D', 0]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(20402, 20402)
 All 2D nanowires as well as Ni (111)and Ni (100) monolayer investigated are ferromagnetic under the Stonercriterion and exhibit enhanced magnetic moments as compared to bulk Ni and therespective Ni monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 2, 'D', 5],[69.0, 2, 'D', 0]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(20511, 20511)
 The doublerectangular nanowire exhibits a magnetic anomaly with a smaller magnetic momentwhen compared to Ni (100) monolayer and is the only structure with an easy axisperpendicular to the wire axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 2, 'D', 8],[178.0, 2, 'D', 3]

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20571, 20575)
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20601, 20601)
 Spin-transfer-torque magnetic random access memory (STT-MRAM) attractsextensive attentions due to its non-volatility, high density and low powerconsumption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20651, 20651)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20662, 20667)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20721, 20721)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20750, 20752)
 It has beenexperimentally proven that a capping layer coating on CoFeB layer is essentialto obtain a strong PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20769, 20769)
 It has beenexperimentally proven that a capping layer coating on CoFeB layer is essentialto obtain a strong PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20795, 20795)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20814, 20814)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20821, 20825)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20857, 20857)
 The trend of PM<missing VAR>A variation with different capping materialsagrees well with experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20891, 20891)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20914, 20918)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20922, 20923)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20949, 20949)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20951, 20951)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20958, 20959)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(20999, 20999)
 The variation of PM<missing VAR>A with differentcapping materials is attributed to the different hybridizations of both d<missing VAR> and p<missing VAR>orbitals via spin-orbital coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(21069, 21069)
 This work can significantly benefit theresearch and development of nanoscale STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21107, 21109)
Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 14, 'T', 6],[313.0, 2, 'x', 6]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21133, 21135)
 We present a detailed study of magnetoresistance r<missing VAR>hoxx(H), Hall effectr<missing VAR>hoxy(H), and electrolyte gating effect in thin (<100 nm) exfoliatedcrystals of WTe2.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 14, 'T', 5],[287.0, 2, 'x', 5]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21146, 21148)
 We present a detailed study of magnetoresistance r<missing VAR>hoxx(H), Hall effectr<missing VAR>hoxy(H), and electrolyte gating effect in thin (<100 nm) exfoliatedcrystals of WTe2.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 14, 'T', 5],[274.0, 2, 'x', 5]

WTe2
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21177, 21179)
 We present a detailed study of magnetoresistance r<missing VAR>hoxx(H), Hall effectr<missing VAR>hoxy(H), and electrolyte gating effect in thin (<100 nm) exfoliatedcrystals of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 14, 'T', 5],[243.0, 2, 'x', 5]

H
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21192, 21192)
 We observe quantum oscillations in H of both r<missing VAR>hoxx(H) andr<missing VAR>hoxy(H), and identify four oscillation frequencies consistent with previousreports in thick crystals.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 14, 'T', 4],[230.0, 2, 'x', 4]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21201, 21203)
 We observe quantum oscillations in H of both r<missing VAR>hoxx(H) andr<missing VAR>hoxy(H), and identify four oscillation frequencies consistent with previousreports in thick crystals.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 14, 'T', 4],[219.0, 2, 'x', 4]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21211, 21213)
 We observe quantum oscillations in H of both r<missing VAR>hoxx(H) andr<missing VAR>hoxy(H), and identify four oscillation frequencies consistent with previousreports in thick crystals.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 14, 'T', 4],[209.0, 2, 'x', 4]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21245, 21247)
 r<missing VAR>hoxy(H) is linear in H at low H consistent withnear-perfect electron-hole compensation, however becomes nonlinear and changessign with increasing H, implying a breakdown of compensation.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 14, 'T', 3],[175.0, 2, 'x', 3]

H
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21255, 21255)
 r<missing VAR>hoxy(H) is linear in H at low H consistent withnear-perfect electron-hole compensation, however becomes nonlinear and changessign with increasing H, implying a breakdown of compensation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 14, 'T', 3],[167.0, 2, 'x', 3]

H
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21261, 21261)
 r<missing VAR>hoxy(H) is linear in H at low H consistent withnear-perfect electron-hole compensation, however becomes nonlinear and changessign with increasing H, implying a breakdown of compensation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 14, 'T', 3],[161.0, 2, 'x', 3]

H
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21296, 21296)
 r<missing VAR>hoxy(H) is linear in H at low H consistent withnear-perfect electron-hole compensation, however becomes nonlinear and changessign with increasing H, implying a breakdown of compensation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 14, 'T', 3],[126.0, 2, 'x', 3]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21338, 21340)
 A field-dependentratio of carrier concentrations p/n can consistently explain r<missing VAR>hoxx(H) andr<missing VAR>hoxy(H) within a two-fluid model.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 14, 'T', 2],[82.0, 2, 'x', 2]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21348, 21350)
 A field-dependentratio of carrier concentrations p/n can consistently explain r<missing VAR>hoxx(H) andr<missing VAR>hoxy(H) within a two-fluid model.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 14, 'T', 2],[72.0, 2, 'x', 2]

WTe2
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21384, 21386)
 We also employ an electrolytic gate tohighly electron-dope WTe2 with Li.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 14, 'T', 1],[36.0, 2, 'x', 1]

Li
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21390, 21390)
 We also employ an electrolytic gate tohighly electron-dope WTe2 with Li.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 14, 'T', 1],[32.0, 2, 'x', 1]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21402, 21404)
 The non-saturating r<missing VAR>hoxx(H) persists to H 14 T with magnetoresistance ratio exceeding 2 x 104 %, even with significantdeviation from perfect electron-hole compensation (p/n  0.84), where thetwo-fluid model predicts a saturating r<missing VAR>hoxx(H).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 14, 'T', 0],[18.0, 2, 'x', 0]

H
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21410, 21410)
 The non-saturating r<missing VAR>hoxx(H) persists to H 14 T with magnetoresistance ratio exceeding 2 x 104 %, even with significantdeviation from perfect electron-hole compensation (p/n  0.84), where thetwo-fluid model predicts a saturating r<missing VAR>hoxx(H).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 14, 'T', 0],[12.0, 2, 'x', 0]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21478, 21480)
 The non-saturating r<missing VAR>hoxx(H) persists to H 14 T with magnetoresistance ratio exceeding 2 x 104 %, even with significantdeviation from perfect electron-hole compensation (p/n  0.84), where thetwo-fluid model predicts a saturating r<missing VAR>hoxx(H).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 14, 'T', 0],[56.0, 2, 'x', 0]

WTe2
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(21515, 21517)
 Our results suggestelectron-hole compensation is not the mechanism for extremely largemagnetoresistance in WTe2, other alternative explanations need to beconsidered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 14, 'T', 1],[93.0, 2, 'x', 1]

Bi2-x
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(21566, 21569)
Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[256.0, 1.8, 'K', 4]

Te3
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(21571, 21572)
Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 1.8, 'K', 4]

I
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(21587, 21587)
 A topological insulator (T<missing VAR>I), a new quantum state featured with thetopologically-protected surface state (T<missing VAR>SS) originating from its peculiartopology in band structure, has attracted much interest due to academic andpractical importance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 1.8, 'K', 3]

S
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(21617, 21617)
 A topological insulator (T<missing VAR>I), a new quantum state featured with thetopologically-protected surface state (T<missing VAR>SS) originating from its peculiartopology in band structure, has attracted much interest due to academic andpractical importance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 1.8, 'K', 3]

Bi2-x
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(21755, 21758)
 To resolvethis problem, we have investigated the transport properties of epitaxialBi2-xSnxTe3 thin films with varying x<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[67.0, 1.8, 'K', 1]

Te3
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(21760, 21761)
 To resolvethis problem, we have investigated the transport properties of epitaxialBi2-xSnxTe3 thin films with varying x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1.8, 'K', 1]

SS
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(21793, 21794)
 With the bulk conduction being stronglysuppressed, the T<missing VAR>SS is separately characterized, resulting in a large phaserelaxation length of 250 nm at 1.8 K, a record-high value in T<missing VAR>Is.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1.8, 'K', 0]

In
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(21842, 21842)
 In addition,the magnetoresistance ratio (MR) has shown a non-monotonic temperaturedependence with a maximum value at an elevated temperature depending on x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1.8, 'K', 1]

I
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22106, 22106)
 Amagnetic heterostructure of topological insulator (T<missing VAR>I) hosts such an exoticmagnetoelectric coupling and can be expected to realize the TME effect as anaxion insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 10, ',', 3],[276.0, 0, ',', 3],[278.0, 0, '%', 3]

I
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22163, 22163)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 10, ',', 2],[219.0, 0, ',', 2],[221.0, 0, '%', 2]

Bi
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22185, 22185)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 10, ',', 2],[197.0, 0, ',', 2],[199.0, 0, '%', 2]

Sb
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22188, 22188)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 10, ',', 2],[194.0, 0, ',', 2],[196.0, 0, '%', 2]

Te3
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22191, 22192)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 10, ',', 2],[190.0, 0, ',', 2],[192.0, 0, '%', 2]

Cr
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22207, 22207)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 10, ',', 2],[175.0, 0, ',', 2],[177.0, 0, '%', 2]

Bi
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22212, 22212)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 10, ',', 2],[170.0, 0, ',', 2],[172.0, 0, '%', 2]

Sb
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22215, 22215)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 10, ',', 2],[167.0, 0, ',', 2],[169.0, 0, '%', 2]

Te3
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22218, 22219)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 10, ',', 2],[163.0, 0, ',', 2],[165.0, 0, '%', 2]

V
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22229, 22229)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 10, ',', 2],[153.0, 0, ',', 2],[155.0, 0, '%', 2]

Bi
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22234, 22234)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 10, ',', 2],[148.0, 0, ',', 2],[150.0, 0, '%', 2]

Sb
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22237, 22237)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 10, ',', 2],[145.0, 0, ',', 2],[147.0, 0, '%', 2]

Te3
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22240, 22241)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 10, ',', 2],[141.0, 0, ',', 2],[143.0, 0, '%', 2]

H
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22260, 22260)
Accompanied by the quantum anomalous Hall (Q<missing VAR>AH) effect, we observe zero Hallconductivity plateaus, which are a hallmark of the axion insulator state, in awide range of magnetic field between the coercive fields of Cr- and V-dopedlayers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 10, ',', 1],[122.0, 0, ',', 1],[124.0, 0, '%', 1]

Cr
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22324, 22324)
Accompanied by the quantum anomalous Hall (Q<missing VAR>AH) effect, we observe zero Hallconductivity plateaus, which are a hallmark of the axion insulator state, in awide range of magnetic field between the coercive fields of Cr- and V-dopedlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 10, ',', 1],[58.0, 0, ',', 1],[60.0, 0, '%', 1]

V
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22329, 22329)
Accompanied by the quantum anomalous Hall (Q<missing VAR>AH) effect, we observe zero Hallconductivity plateaus, which are a hallmark of the axion insulator state, in awide range of magnetic field between the coercive fields of Cr- and V-dopedlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 10, ',', 1],[53.0, 0, ',', 1],[55.0, 0, '%', 1]

H
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22400, 22400)
 The resistance of the axion insulator state reaches as high as 109ohm, leading to a gigantic magnetoresistance ratio exceeding 10,000,000% uponthe transition from the Q<missing VAR>AH state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 10, ',', 0],[18.0, 0, ',', 0],[16.0, 0, '%', 0]

I
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(22414, 22414)
 The tricolor structure of T<missing VAR>I may not only bean ideal arena for the topologically distinct phenomena, but also providemagnetoresistive applications for advancing dissipationless topologicalelectronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 10, ',', 1],[32.0, 0, ',', 1],[30.0, 0, '%', 1]

S
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(22746, 22746)
 Recently, organic semiconductors were inserted into nanometersized tunnel junctions allowing enhancement of spin reversal, giantmagneto-resistance behaviour was observed in single non-magnetic moleculescoupled to magnetic electrodes, and the use of the quantum tunnellingproperties of single-molecule magnets (SM<missing VAR>Ms) in hybrid devices was proposed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 300, '%', 2],[190.0, 1, 'K', 2]

SWCN
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(22809, 22812)
Herein, we present an original device in which a non-magnetic molecular quantumdot, made of a single-wall carbon nanotube (SWCNT) contacted with non-magneticelectrodes, is laterally coupled via supramolecular interactions to a TbPc2-SMM(Pc  phthalocyanine), which provides a localized magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 300, '%', 1],[124.0, 1, 'K', 1]

Tb
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(22844, 22844)
Herein, we present an original device in which a non-magnetic molecular quantumdot, made of a single-wall carbon nanotube (SWCNT) contacted with non-magneticelectrodes, is laterally coupled via supramolecular interactions to a TbPc2-SMM(Pc  phthalocyanine), which provides a localized magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 300, '%', 1],[92.0, 1, 'K', 1]

S
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(22848, 22848)
Herein, we present an original device in which a non-magnetic molecular quantumdot, made of a single-wall carbon nanotube (SWCNT) contacted with non-magneticelectrodes, is laterally coupled via supramolecular interactions to a TbPc2-SMM(Pc  phthalocyanine), which provides a localized magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 300, '%', 1],[88.0, 1, 'K', 1]

SWCN
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(22883, 22886)
 Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 300, '%', 0],[50.0, 1, 'K', 0]

S
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(22931, 22931)
 Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 300, '%', 0],[5.0, 1, 'K', 0]

C
###Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate|Yee Sin Ang,Shengyuan A. Yang,C. Zhang,Zhongshui Ma,L. K. Ang###
(23064, 23064)
 Despite much anticipation of valleytronics as a candidate to replace theageing CM<missing VAR>OS-based information processing, its progress is severely hindered bythe lack of practical ways to manipulate valley polarization all-electricallyin an electrostatic setting.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 10, ',', 4],[245.0, 0, '%', 4],[289.0, 16, 'types', 5]

OS
###Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate|Yee Sin Ang,Shengyuan A. Yang,C. Zhang,Zhongshui Ma,L. K. Ang###
(23066, 23067)
 Despite much anticipation of valleytronics as a candidate to replace theageing CM<missing VAR>OS-based information processing, its progress is severely hindered bythe lack of practical ways to manipulate valley polarization all-electricallyin an electrostatic setting.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 10, ',', 4],[242.0, 0, '%', 4],[286.0, 16, 'types', 5]

NiMnSb
###Spin-charge conversion in NiMnSb Heusler alloy films|Zhenchao Wen,Zhiyong Qiu,Sebastian Tolle,Cosimo Gorini,Takeshi Seki,Dazhi Hou,Takahide Kubota,Ulrich Eckern,Eiji Saitoh,Koki Takanashi###
(23580, 23582)
Spin-charge conversion in NiMnSb Heusler alloy films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb
###Spin-charge conversion in NiMnSb Heusler alloy films|Zhenchao Wen,Zhiyong Qiu,Sebastian Tolle,Cosimo Gorini,Takeshi Seki,Dazhi Hou,Takahide Kubota,Ulrich Eckern,Eiji Saitoh,Koki Takanashi###
(23731, 23733)
Here, we report on the spin-charge conversion effect in the prototypicalHeusler alloy NiMnSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Spin-charge conversion in NiMnSb Heusler alloy films|Zhenchao Wen,Zhiyong Qiu,Sebastian Tolle,Cosimo Gorini,Takeshi Seki,Dazhi Hou,Takahide Kubota,Ulrich Eckern,Eiji Saitoh,Koki Takanashi###
(23746, 23751)
 Spin currents were injected from Y3Fe5O12 into NiMnSbfilms by spin pumping, and then the spin currents were converted to chargecurrents via spin-orbit interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb
###Spin-charge conversion in NiMnSb Heusler alloy films|Zhenchao Wen,Zhiyong Qiu,Sebastian Tolle,Cosimo Gorini,Takeshi Seki,Dazhi Hou,Takahide Kubota,Ulrich Eckern,Eiji Saitoh,Koki Takanashi###
(23755, 23757)
 Spin currents were injected from Y3Fe5O12 into NiMnSbfilms by spin pumping, and then the spin currents were converted to chargecurrents via spin-orbit interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(24060, 24061)
 The occurrence of stripe domains in ferromagnetic Permalloy(PyFe20Ni80) is a well known phenomenon which has been extensivelyobserved and characterized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(24194, 24196)
 So far, d<missing VAR>cr has usually been presented as the boundarybetween the homogeneous (H) and stripe-domains (SD) regime, respectively belowand above d<missing VAR>cr.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(24205, 24205)
 So far, d<missing VAR>cr has usually been presented as the boundarybetween the homogeneous (H) and stripe-domains (SD) regime, respectively belowand above d<missing VAR>cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(24225, 24225)
 In this work we study the transition from the H to the SD<missing VAR>regime in thin films and microstructured bridges of Py with differentthicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(24243, 24243)
 In this work we study the transition from the H to the SD<missing VAR>regime in thin films and microstructured bridges of Py with differentthicknesses.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(24249, 24249)
 In this work we study the transition from the H to the SD<missing VAR>regime in thin films and microstructured bridges of Py with differentthicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(24406, 24406)
 The transition from the ESD to the SD<missing VAR> regime isaccompanied by a sharp increase of the magnetoresistance ratio at the thicknesswhere stripes appear in MFM.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24470, 24471)
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 3, ',', 5],[257.0, 300, 'K', 5],[260.0, 10, 'K', 5],[264.0, 87, '%', 5],[270.0, 165, '%', 5]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24475, 24478)
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 3, ',', 5],[250.0, 300, 'K', 5],[253.0, 10, 'K', 5],[257.0, 87, '%', 5],[263.0, 165, '%', 5]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24497, 24500)
 The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material forspin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, ',', 4],[228.0, 300, 'K', 4],[231.0, 10, 'K', 4],[235.0, 87, '%', 4],[241.0, 165, '%', 4]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24520, 24520)
 The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material forspin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 3, ',', 4],[208.0, 300, 'K', 4],[211.0, 10, 'K', 4],[215.0, 87, '%', 4],[221.0, 165, '%', 4]

MgO
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24577, 24578)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 3, ',', 2],[150.0, 300, 'K', 2],[153.0, 10, 'K', 2],[157.0, 87, '%', 2],[163.0, 165, '%', 2]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24597, 24600)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 3, ',', 2],[128.0, 300, 'K', 2],[131.0, 10, 'K', 2],[135.0, 87, '%', 2],[141.0, 165, '%', 2]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24610, 24610)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 3, ',', 2],[118.0, 300, 'K', 2],[121.0, 10, 'K', 2],[125.0, 87, '%', 2],[131.0, 165, '%', 2]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24638, 24641)
 X<missing VAR>-ray and electron diffractionmeasurements show that the (001) CoFeCrAl electrode films with atomically flatsurfaces have a B2-ordered phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3, ',', 1],[87.0, 300, 'K', 1],[90.0, 10, 'K', 1],[94.0, 87, '%', 1],[100.0, 165, '%', 1]

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24660, 24661)
 X<missing VAR>-ray and electron diffractionmeasurements show that the (001) CoFeCrAl electrode films with atomically flatsurfaces have a B2-ordered phase.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3, ',', 1],[67.0, 300, 'K', 1],[70.0, 10, 'K', 1],[74.0, 87, '%', 1],[80.0, 165, '%', 1]

MgO
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24771, 24772)
 Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 3, ',', 1],[43.0, 300, 'K', 1],[40.0, 10, 'K', 1],[36.0, 87, '%', 1],[30.0, 165, '%', 1]

C
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24845, 24845)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 3, ',', 3],[117.0, 300, 'K', 3],[114.0, 10, 'K', 3],[110.0, 87, '%', 3],[104.0, 165, '%', 3]

Co
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24864, 24864)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, ',', 3],[136.0, 300, 'K', 3],[133.0, 10, 'K', 3],[129.0, 87, '%', 3],[123.0, 165, '%', 3]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24868, 24868)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 3, ',', 3],[140.0, 300, 'K', 3],[137.0, 10, 'K', 3],[133.0, 87, '%', 3],[127.0, 165, '%', 3]

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24876, 24877)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 3, ',', 3],[148.0, 300, 'K', 3],[145.0, 10, 'K', 3],[141.0, 87, '%', 3],[135.0, 165, '%', 3]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24881, 24884)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 3, ',', 3],[153.0, 300, 'K', 3],[150.0, 10, 'K', 3],[146.0, 87, '%', 3],[140.0, 165, '%', 3]

Y
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24906, 24906)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3, ',', 3],[178.0, 300, 'K', 3],[175.0, 10, 'K', 3],[171.0, 87, '%', 3],[165.0, 165, '%', 3]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24915, 24915)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 3, ',', 3],[187.0, 300, 'K', 3],[184.0, 10, 'K', 3],[180.0, 87, '%', 3],[174.0, 165, '%', 3]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24917, 24917)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 3, ',', 3],[189.0, 300, 'K', 3],[186.0, 10, 'K', 3],[182.0, 87, '%', 3],[176.0, 165, '%', 3]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24937, 24937)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 3, ',', 4],[209.0, 300, 'K', 4],[206.0, 10, 'K', 4],[202.0, 87, '%', 4],[196.0, 165, '%', 4]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24939, 24939)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 3, ',', 4],[211.0, 300, 'K', 4],[208.0, 10, 'K', 4],[204.0, 87, '%', 4],[198.0, 165, '%', 4]

C
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24953, 24953)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 3, ',', 4],[225.0, 300, 'K', 4],[222.0, 10, 'K', 4],[218.0, 87, '%', 4],[212.0, 165, '%', 4]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24971, 24971)
 Finally, the effectof the Cr-Fe swap disorder on the ability for electronic states to allowcoherent electron tunneling is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 3, ',', 5],[243.0, 300, 'K', 5],[240.0, 10, 'K', 5],[236.0, 87, '%', 5],[230.0, 165, '%', 5]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(24973, 24973)
 Finally, the effectof the Cr-Fe swap disorder on the ability for electronic states to allowcoherent electron tunneling is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 3, ',', 5],[245.0, 300, 'K', 5],[242.0, 10, 'K', 5],[238.0, 87, '%', 5],[232.0, 165, '%', 5]

ZnO/MgO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(25049, 25053)
Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[84.0, 96, '%', 2],[203.0, 1.3, 'A', 3]

Fe/ZnO/MgO/Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(25064, 25072)
 We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[65.0, 96, '%', 1],[184.0, 1.3, 'A', 2]

ZnO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(25102, 25103)
 We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 96, '%', 1],[153.0, 1.3, 'A', 2]

Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(25203, 25203)
 We observe a high magnetoresistance ratio up to 96% at roomtemperature (RT) and find that these MTJs have asymmetric current-voltagecharacteristics, and their rectifying performances are largely dependent on themagnetization alignments of the Fe electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 96, '%', 0],[53.0, 1.3, 'A', 1]

W
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(25258, 25258)
 Diode responsibilities at azero-bias voltage (beta0), which is an important performance index forharvesting applications, are observed up to 1.3 A/W at RT in the antiparallelalignment of the magnetizations while maintaining rather low resistance-area(R<missing VAR>A) products (a few tens of k<missing VAR>Omegamum<missing VAR>2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 96, '%', 1],[2.0, 1.3, 'A', 0]

(Fe)
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(25334, 25336)
 Even with the same top andbottom electrodes (Fe), the obtained beta0 values are comparable to thoseof reported high-performance tunnel diodes consisting of amorphous bilayertunnel barriers with polycrystalline dissimilar electrodes.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 96, '%', 2],[78.0, 1.3, 'A', 1]

ZnO/MgO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(25404, 25408)
 This stronglysuggests that the epitaxial ZnO/MgO bilayer tunnel barrier is effective forenhancing the beta0 without significant increase in the R<missing VAR>A.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[267.0, 96, '%', 3],[148.0, 1.3, 'A', 2]

In
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(25444, 25444)
 In addition,we demonstrate that a zero-bias anomaly in thetunnel conductance, whichoriginates from the magnon excitations at the Fe/barrier interfaces, plays acrucial role in observed spin-dependent diode performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 96, '%', 4],[188.0, 1.3, 'A', 3]

Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(25488, 25488)
 In addition,we demonstrate that a zero-bias anomaly in thetunnel conductance, whichoriginates from the magnon excitations at the Fe/barrier interfaces, plays acrucial role in observed spin-dependent diode performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 96, '%', 4],[232.0, 1.3, 'A', 3]

IrCrMn
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25582, 25584)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 1300, 'K', 3]

Al
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25589, 25589)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 1300, 'K', 3]

Ga
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25592, 25592)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 1300, 'K', 3]

Si
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25595, 25595)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 1300, 'K', 3]

Ge
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25598, 25598)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 1300, 'K', 3]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25613, 25614)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 1300, 'K', 3]

IrCrMn
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25637, 25639)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1300, 'K', 2]

Al
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25644, 25644)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1300, 'K', 2]

Ga
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25647, 25647)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1300, 'K', 2]

Si
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25650, 25650)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1300, 'K', 2]

Ge
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25653, 25653)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 1300, 'K', 2]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25690, 25691)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1300, 'K', 2]

IrCrMnAl
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25760, 25763)
 TheCurie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) aspredicted from mean-field-approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1300, 'K', 0]

IrCrMnGa
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25767, 25770)
 TheCurie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) aspredicted from mean-field-approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1300, 'K', 0]

IrCrMn
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25873, 25875)
 Further,we investigate the electronic structure of IrCrMnZ<missing VAR>/MgO heterojunction along(001) direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1300, 'K', 3]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25878, 25879)
 Further,we investigate the electronic structure of IrCrMnZ<missing VAR>/MgO heterojunction along(001) direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1300, 'K', 3]

IrCrMnAl/MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25893, 25899)
 IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity evenat the MgO interface, with no interfacial states at/around Fermi level in theminority-spin channel.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[113.0, 1300, 'K', 4]

IrCrMnGa/MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25903, 25909)
 IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity evenat the MgO interface, with no interfacial states at/around Fermi level in theminority-spin channel.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[123.0, 1300, 'K', 4]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25924, 25925)
 IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity evenat the MgO interface, with no interfacial states at/around Fermi level in theminority-spin channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1300, 'K', 4]

IrCrMnAl/MgO/IrCrMnAl
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25968, 25979)
 Large majority-spin conductance of IrCrMnAl/MgO/IrCrMnAland IrCrMnGa/MgO/IrCrMnGa is reported from the calculation of ballisticspin-transport property for parallel magnetization configuration.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[188.0, 1300, 'K', 5]

IrCrMnGa/MgO/IrCrMnGa
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(25984, 25995)
 Large majority-spin conductance of IrCrMnAl/MgO/IrCrMnAland IrCrMnGa/MgO/IrCrMnGa is reported from the calculation of ballisticspin-transport property for parallel magnetization configuration.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[204.0, 1300, 'K', 5]

IrCrMnAl/MgO/IrCrMnAl
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(26032, 26043)
 We proposeIrCrMnAl/MgO/IrCrMnAl and IrCrMnGa/MgO/IrCrMnGa as promising MTJs with a weakertemperature dependence of tunneling magnetoresistance ratio, owing to theirvery high Curie temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[252.0, 1300, 'K', 6]

IrCrMnGa/MgO/IrCrMnGa
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(26047, 26058)
 We proposeIrCrMnAl/MgO/IrCrMnAl and IrCrMnGa/MgO/IrCrMnGa as promising MTJs with a weakertemperature dependence of tunneling magnetoresistance ratio, owing to theirvery high Curie temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[267.0, 1300, 'K', 6]

In
###Control of sensitivity in vortex-type magnetic tunnel junction magnetometer sensors by the pinned layer geometry|Motoki Endo,Muftah Al-Mahdawi,Mikihiko Oogane,Yasuo Ando###
(26228, 26228)
 In this work, we develop sensor MTJs with NiFe sensing layershaving a vortex magnetic configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.85, 'to', 2]

NiFe
###Control of sensitivity in vortex-type magnetic tunnel junction magnetometer sensors by the pinned layer geometry|Motoki Endo,Muftah Al-Mahdawi,Mikihiko Oogane,Yasuo Ando###
(26247, 26248)
 In this work, we develop sensor MTJs with NiFe sensing layershaving a vortex magnetic configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.85, 'to', 2]

Cr3
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26532, 26533)
Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26539, 26539)
Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26542, 26542)
Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26582, 26582)
 Two-dimensional ferromagnetic (FM) half-metals are promising candidates foradvanced spintronic devices with small-size and high-capacity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26635, 26635)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Te4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26638, 26641)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26678, 26679)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26685, 26685)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26688, 26688)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Te4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26713, 26716)
 We found that Cr3Te4 monolayer based device showsspin filtering and dual spin diode effect when applying bias voltage, whileCr3S4 monolayer is an excellent platform to realize a spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3S4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26753, 26756)
 We found that Cr3Te4 monolayer based device showsspin filtering and dual spin diode effect when applying bias voltage, whileCr3S4 monolayer is an excellent platform to realize a spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Te4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26828, 26831)
 Thedifferent transport properties are primarily ascribed to the semiconductingspin channel, which is close to and away from the Fermi level in Cr3Te4and Cr3Se4 monolayers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Se4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26836, 26839)
 Thedifferent transport properties are primarily ascribed to the semiconductingspin channel, which is close to and away from the Fermi level in Cr3Te4and Cr3Se4 monolayers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Se4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26859, 26862)
 Interestingly, the current inmonolayer Cr3Se4 based device also displays a negative differentialresistance effect (NDRE) and a high magnetoresistance ratio (up to 2103).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26884, 26884)
 Interestingly, the current inmonolayer Cr3Se4 based device also displays a negative differentialresistance effect (NDRE) and a high magnetoresistance ratio (up to 2103).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26931, 26931)
Moreover, we found thermally induced spin filtering effect and NDRE inCr3Se4 junction when applying temperature gradient instead of biasvoltage.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Se4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26939, 26942)
Moreover, we found thermally induced spin filtering effect and NDRE inCr3Se4 junction when applying temperature gradient instead of biasvoltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26978, 26979)
 These theoretical findings highlight the potential of Cr3X<missing VAR>4(X<missing VAR>Se, Te) monolayers in spintronic applications and put forward realisticmaterials to realize nanosale spintronic device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26986, 26986)
 These theoretical findings highlight the potential of Cr3X<missing VAR>4(X<missing VAR>Se, Te) monolayers in spintronic applications and put forward realisticmaterials to realize nanosale spintronic device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(26989, 26989)
 These theoretical findings highlight the potential of Cr3X<missing VAR>4(X<missing VAR>Se, Te) monolayers in spintronic applications and put forward realisticmaterials to realize nanosale spintronic device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrSBr
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(27164, 27166)
 Here, we demonstrate a new concept for programmable MTJoperation via strain control of the magnetic states of CrSBr, a layeredantiferromagnetic semiconductor used as the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrSBr
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(27193, 27195)
 Switching the CrSBrfrom antiferromagnetic to ferromagnetic order generates a giant tunnelingmagnetoresistance ratio without external magnetic field at temperatures up to 140 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(27241, 27241)
 Switching the CrSBrfrom antiferromagnetic to ferromagnetic order generates a giant tunnelingmagnetoresistance ratio without external magnetic field at temperatures up to 140 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(27479, 27479)
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 95, '%', 2],[220.0, 1.26, ',', 3],[526.0, 1000, '%', 9]

Cr
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(27481, 27481)
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 95, '%', 2],[218.0, 1.26, ',', 3],[524.0, 1000, '%', 9]

Fe2CrTe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(27556, 27559)
 Using electronic structure calculations based on density functional theory,we predict and study the structural, mechanical, electronic, magnetic andtransport properties of a new full Heusler chalcogenide, namely, Fe2CrTe,both in bulk and heterostructure form.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 95, '%', 1],[140.0, 1.26, ',', 2],[446.0, 1000, '%', 8]

H
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(27593, 27593)
 The system shows a ferromagnetic andhalf-metallic(HM) like behavior, with a very high (about 95%) spin polarizationat the Fermi level, in its cubic phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 95, '%', 0],[106.0, 1.26, ',', 1],[412.0, 1000, '%', 7]

H
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(27849, 27849)
 Due to the HM<missing VAR>-like behavior of the cubic phase andkeeping in mind the practical aspects, we probe the effect of strain as well assubstrate on various physical properties of this alloy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 95, '%', 5],[150.0, 1.26, ',', 4],[156.0, 1000, '%', 2]

Fe2CrTe/MgO/Fe2CrTe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(27925, 27936)
 Transmission profile ofthe Fe2CrTe/MgO/Fe2CrTe heterojunction has been calculated to probe it asa magnetic tunneling junction (MTJ) material in both the cubic and tetragonalphases.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[312.0, 95, '%', 6],[226.0, 1.26, ',', 5],[69.0, 1000, '%', 1]

Tb/Co
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(28084, 28086)
Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[111.0, 50, 'fs', 2],[202.0, 74, '%', 3]

In
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(28181, 28181)
 In this work we demonstrate successfulfield-free 50fs single laser pulse driven magnetization reversal of [Tb/Co]based storage layer in a perpendicular magnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 50, 'fs', 0],[107.0, 74, '%', 1]

Co
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(28216, 28216)
 In this work we demonstrate successfulfield-free 50fs single laser pulse driven magnetization reversal of [Tb/Co]based storage layer in a perpendicular magnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 50, 'fs', 0],[72.0, 74, '%', 1]

